21st week of 2015 patent applcation highlights part 55 |
Patent application number | Title | Published |
20150140791 | APPARATUS FOR PRODUCING METAL CHLORIDE GAS AND METHOD FOR PRODUCING METAL CHLORIDE GAS, AND APPARATUS FOR HYDRIDE VAPOR PHASE EPITAXY, NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR DEVICE, WAFER FOR NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE, METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR FREESTANIDNG SUBSTRATE AND NITRIDE SEMICONDUCTOR CRYSTAL - There is provided an apparatus for producing metal chloride gas, comprising: a source vessel configured to store a metal source; a gas supply port configured to supply chlorine-containing gas into the source vessel; a gas exhaust port configured to discharge metal chloride-containing gas containing metal chloride gas produced by a reaction between the chlorine-containing gas and the metal source, to outside of the source vessel; and a partition plate configured to form a gas passage continued to the gas exhaust port from the gas supply port by dividing a space in an upper part of the metal source in the source vessel, wherein the gas passage is formed in one route from the gas supply port to the gas exhaust port, with a horizontal passage width of the gas passage set to 5 cm or less, with bent portions provided on the gas passage. | 2015-05-21 |
20150140792 | METHOD FOR DEPOSITING A GROUP III NITRIDE SEMICONDUCTOR FILM - A method for depositing a Group III nitride semiconductor film on a substrate is provided that comprises: providing a sapphire substrate; placing the substrate in a vacuum chamber; | 2015-05-21 |
20150140793 | NANOWIRE DEVICES - A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device. | 2015-05-21 |
20150140794 | POLYCRYSTALLIZATION METHOD - According to one embodiment, provided is a polycrystallization method for polycrystallizing an amorphous semiconductor film that has a natural oxide film on the surface . The polycrystallization method includes a step of cleaning the natural oxide film while leaving the natural oxide film on the surface of the amorphous semiconductor film, and a step of polycrystallizing the amorphous semiconductor film in the state where the natural oxide film is left. | 2015-05-21 |
20150140795 | METHOD FOR PRODUCING SEMICONDUCTOR THIN FILMS ON FOREIGN SUBSTRATES - The invention relates to a method by means of which the average single crystal size, in particular the diameter of the single crystals, in a semiconductor thin film applied to a foreign substrate can be increased by an order of magnitude with respect to prior methods. The method is characterized in that a thin semiconductor film is applied to the foreign substrate in a first step. Then the foreign substrate is heated to such an extent that the semiconductor thin film melts. Then the temperature is slowly decreased to below the melting temperature of the semiconductor material. During the cooling process, the foreign substrate is heated in such a way that, proceeding from the surface of the foreign substrate, the temperature continuously decreases in a vertical direction perpendicular through the semiconductor thin film to the surface of the thin film. It is thereby ensured that the thin film crystallizes, or rather solidifies, in the opposite direction during the slow decrease of the temperature to below the melting temperature of the semiconductor thin film. In other words, the atom layers directly at the exposed surface of the thin film crystallize first, then the next deeper atom layers crystallize, etc., until finally the atom layers in the immediate vicinity of the surface of the foreign substrate crystallize. The atom layers directly at the exposed surface of the thin film can freely orient themselves without interference during the crystallization, whereby the formation of extensive single crystals several atom layers thick is promoted. Said extensive single crystals are then used as growth nuclei for the next deeper atom layers in such a way that said extensive single crystals grow in thickness in the direction of the surface of the foreign substrate. Only the atom layers in the immediate vicinity of the surface of the foreign substrate are interfered with during the crystallization and degrade into an amorphous or polycrystalline boundary layer. In order to ensure the aforementioned temperature course perpendicular through the thin film, either a heat source applied to the underside of the foreign substrate in a planar manner or heating of the foreign substrate by means of electric current passage must be selected as the heating type. The method is suitable in particular for producing highly efficient thin film solar cells. The method is also suitable for high-quality annealing of high-temperature semiconductor thin films. | 2015-05-21 |
20150140796 | FORMATION OF CONTACT/VIA HOLE WITH SELF-ALIGNMENT - In a method for manufacturing a semiconductor device, a substrate is provided, and a dielectric layer is formed to cover the substrate. A recess portion is formed in the dielectric layer. A spacer is formed on a side surface of the recess portion. The dielectric layer is etched through the recess portion to form a hole in the dielectric layer to expose a portion of the substrate. | 2015-05-21 |
20150140797 | 3D MEMORY - Three-dimensional memory cells and methods of making and using the memory cells are discussed generally herein. In one or more embodiments, a three-dimensional vertical memory can include a memory stack. Such a memory stack can include memory cells and a dielectric between adjacent memory cells, each memory cell including a control gate and a charge storage structure. The memory cell can further include a barrier material between the charge storage structure and the control gate, the charge storage structure and the barrier material having a substantially equal dimension. | 2015-05-21 |
20150140798 | SEMICONDUCTOR MANUFACTURING METHOD AND EQUIPMENT THEREOF - A semiconductor manufacturing equipment includes a buffer chamber, a load port, a first chamber, and a second chamber respectively connected with the buffer chamber at a different side. The semiconductor manufacturing equipment also has a third chamber in the buffer chamber, the third chamber configured for cooling a wafer, and a single blade robot in the buffer chamber. Moreover, the semiconductor manufacturing equipment has a controller including a program, wherein the program elevates a wafer transfer priority for the first chamber and the second chamber higher than a wafer transfer priority for the third chamber. | 2015-05-21 |
20150140799 | ASYMMETRIC SPACERS - A semiconductor device having asymmetric spacers and steps for forming the same are disclosed. The spacers have difference capacitances, with the spacer having a higher capacitance formed over a source region of the device and the spacer having a lower capacitance formed over a drain region of the device. Embodiments of the disclosed invention include spacers made from different materials, having different or substantially equal thicknesses. | 2015-05-21 |
20150140800 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device includes the following steps. At least a first gate stack layer and at least a second gate stack layer protruding from a conductive layer on a substrate are provided. Subsequently, two spacers and a protective layer are formed on the conductive layer, and the two spacers and the protective layer jointly surround the protruded first gate stack layer and the protruded second gate stack layer. The two spacers and the protective layer are used as a mask to remove a part of the conductive layer. Afterwards, the two spacers and the protective layer are removed. | 2015-05-21 |
20150140801 | PATTERNED PHOTORESIST TO ATTACH A CARRIER WAFER TO A SILICON DEVICE WAFER - Patterned photoresist is used to attach a carrier wafer to a silicon device wafer. In one example, a silicon wafer is patterned for contact bumps by applying a photoresist over a surface of the wafer and removing the photoresist in locations at which the contact bumps are to be formed. The contact bumps are formed in the locations at which the photoresist is removed. A temporary carrier is attached to the photoresist over the wafer. The back side of the wafer opposite the contact bumps is processed while handling the wafer using the temporary carrier. The temporary carrier is removed. The photoresist on the front side of the wafer with the contact bumps is removed after removing the temporary carrier. | 2015-05-21 |
20150140802 | SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE - A semiconductor device includes: a substrate in which a product region and scribe regions are defined; a 1st insulation film formed above the substrate; a metal film in the 1st insulation film, disposed within the scribe regions in such a manner as to surround the product region; a 2nd insulation film formed on the 1st insulation film and the metal film; a 1st groove disposed more inside than the metal film in such a manner as to surround the product region, and reaching from a top surface of the 2nd insulation film to a position deeper than a top surface of the metal film; and a 2nd groove disposed more outside than the metal film in such a manner as to surround the metal film, and reaching from the top surface of the 2nd insulation film to a position deeper than the top surface of the metal film. | 2015-05-21 |
20150140803 | METHODS OF FORMING SEMICONDUCTOR STRUCTURES - Methods of forming semiconductor structures that include bodies of a semiconductor material disposed between rails of a dielectric material are disclosed. Such methods may include filling a plurality of trenches in a substrate with a dielectric material and removing portions of the substrate between the dielectric material to form a plurality of openings. In some embodiments, portions of the substrate may be undercut to form a continuous void underlying the bodies and the continuous void may be filled with a conductive material. In other embodiments, portions of the substrate exposed within the openings may be converted to a silicide material to form a conductive material under the bodies. For example, the conductive material may be used as a conductive line to electrically interconnect memory device components. Semiconductor structures and devices formed by such methods are also disclosed. | 2015-05-21 |
20150140804 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing the same are disclosed. The semiconductor device includes adjacent storage node contact plugs having different heights, and lower-electrode bowing profiles having different heights, such that a spatial margin between the lower electrodes is assured and a bridge fail is prevented, resulting in improved device operation characteristics. The semiconductor device includes a first storage node contact plug and a second storage node contact plug formed over a semiconductor substrate, wherein the second storage node contact plug is arranged at a height different from that of the first storage node contact plug, and a lower electrode formed over the first storage node contact plug and the second storage node contact plug. | 2015-05-21 |
20150140805 | METHODS FOR FORMING AN INTERCONNECT PATTERN ON A SUBSTRATE - Embodiments of methods for forming interconnect patterns on a substrate are provided herein. In some embodiments, a method for forming an interconnect pattern atop a substrate includes depositing a porous dielectric layer atop a cap layer and a plurality of spacers disposed atop the cap layer, wherein the cap layer is disposed atop a bulk dielectric layer and the bulk dielectric layer is disposed atop a substrate; removing a portion of the porous dielectric layer; removing the plurality of spacers to form features in the porous dielectric layer; and etching the cap layer to extend the features through the cap layer. | 2015-05-21 |
20150140806 | WAFER-LEVEL DIE ATTACH METALLIZATION - Embodiments of a semiconductor wafer having wafer-level die attach metallization on a back-side of the semiconductor wafer, resulting semiconductor dies, and methods of manufacturing the same are disclosed. In one embodiment, a semiconductor wafer includes a semiconductor structure and a front-side metallization that includes front-side metallization elements for a number of semiconductor die areas. The semiconductor wafer also includes vias that extend from a back-side of the semiconductor structure to the front-side metallization elements. A back-side metallization is on the back-side of the semiconductor structure and within the vias. For each via, one or more barrier layers are on a portion of the back-side metallization that is within the via and around a periphery of the via. The semiconductor wafer further includes wafer-level die attach metallization on the back-side metallization other than the portions of the back-side metallization that are within the vias and around the peripheries of the vias. | 2015-05-21 |
20150140807 | VIAS IN POROUS SUBSTRATES - A microelectronic unit can include a substrate having front and rear surfaces and active semiconductor devices therein, the substrate having a plurality of openings arranged in a symmetric or asymmetric distribution across an area of the rear surface, first and second conductive vias connected to first and second pads exposed at the front surface, pluralities of first and second conductive interconnects extending within respective ones of the openings, and first and second conductive contacts exposed for interconnection with an external element. The plurality of first conductive interconnects can be separated from the plurality of second conductive interconnects by at least one of the plurality of openings, the at least one opening at least partially filled with an insulating material. The distribution of the openings can include at least m openings spaced apart in a first direction and n openings spaced apart in a second direction transverse to the first direction. | 2015-05-21 |
20150140808 | SEMICONDUCTOR DEVICE HAVING BURIED BIT LINES AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes body lines, formed substantially perpendicular to a substrate, and having recessed sidewalls, buried bit lines, buried in the recessed sidewalls, and including a metal silicide, and a barrier layer interposed between each of the buried bit lines and the body lines corresponding thereto, and containing germanium. | 2015-05-21 |
20150140809 | INTEGRATED CIRCUIT AND INTERCONNECT, AND METHOD OF FABRICATING SAME - The disclosure relates generally to integrated circuits (IC), IC interconnects, and methods of fabricating the same, and more particularly, high performance inductors. The IC includes at least one trench within a dielectric layer disposed on a substrate. The trench is conformally coated with a liner and seed layer, and includes an interconnect within. The interconnect includes a hard mask on the sidewalls of the interconnect. | 2015-05-21 |
20150140810 | METHOD OF FORMING WIRINGS - A method of manufacturing a wiring includes sequentially forming a first insulation layer, a first layer, and a second layer on a substrate, etching an upper portion of the second layer a plurality of times to form a second layer pattern including a first recess having a shape of a staircase, etching a portion of the second layer pattern and a portion of the first layer under the first recess to form a first layer pattern including a second recess having a shape of a staircase similar to the first recess, etching a portion of the first layer pattern under the second recess to form a first opening exposing a portion of a top surface of the first insulation layer, etching the exposed portion of the first insulation layer to form a second opening through the first insulation layer, and forming a wiring filling the second opening. | 2015-05-21 |
20150140811 | Spacer-Damage-Free Etching - A method of patterning a semiconductor device is disclosed. A tri-layer photoresist is formed over a plurality of patterned features. The tri-layer photoresist includes a bottom layer, a middle layer disposed over the bottom layer, and a top layer disposed over the middle layer, the top layer containing a photo-sensitive material. The top layer is patterned via a photolithography process, the patterned top layer including an opening. The opening is extended into the bottom layer by etching the bottom layer and continuously forming a protective layer on etched surfaces of the bottom layer and on exposed surfaces of the patterned features. The bottom layer is removed. At least some portions of the protective layer remain on the exposed surfaces of the patterned features after the bottom layer is removed. | 2015-05-21 |
20150140812 | METHODS FOR DRY ETCHING COBALT METAL USING FLUORINE RADICALS - Embodiments of methods for etching cobalt metal using fluorine radicals are provided herein. In some embodiments, a method of etching a cobalt layer in a substrate processing chamber includes: forming a plasma from a process gas comprising a fluorine-containing gas; and exposing the cobalt layer to fluorine radicals from the plasma while maintaining the cobalt layer at a temperature of about | 2015-05-21 |
20150140813 | Methods of Forming Non-Volatile Memory Devices Including Vertical NAND Strings - A NAND based non-volatile memory device can include a plurality of memory cells vertically arranged as a NAND string and a plurality of word line plates each electrically connected to a respective gate of the memory cells in the NAND string. A plurality of word line contacts can each be electrically connected to a respective word line plate, where the plurality of word line contacts are aligned to a bit line direction in the device. | 2015-05-21 |
20150140814 | ALKALINE PRETREATMENT FOR ELECTROPLATING - Prior to electrodeposition, a semiconductor wafer having one or more recessed features, such as through silicon vias (TSVs), is pretreated by contacting the wafer with a pre-wetting liquid comprising a buffer (such as a borate buffer) and having a pH of between about 7 and about 13. This pre-treatment is particularly useful for wafers having acid-sensitive nickel-containing seed layers, such as NiB and NiP. The pre-wetting liquid is preferably degassed prior to contact with the wafer substrate. The pretreatment is preferably performed under subatmospheric pressure to prevent bubble formation within the recessed features. After the wafer is pretreated, a metal, such as copper, is electrodeposited from an acidic electroplating solution to fill the recessed features on the wafer. The described pretreatment minimizes corrosion of seed layer during electroplating and reduces plating defects. | 2015-05-21 |
20150140815 | VIA IN SUBSTRATE WITH DEPOSITED LAYER - An opening such as a small-diameter via is formed in a semiconductor substrate such as a monocrystalline silicon chip or wafer by a high etch rate process which leaves the opening with a rough interior surface. A smoothing layer such as a polysilicon layer is applied over the interior surfaces of the openings. The smoothing layer presents a surface smoother than the original interior surface. An insulating layer is formed over the smoothing layer or formed from the smoothing layer, and a conductive element such as a metal is formed in the opening. In a variant, a glass-forming material such as BPSG is applied in the opening. The glass-forming material is reflowed to form a glassy insulating layer which presents a smooth surface. The interface between the metal conductive element and the insulating or glassy layer is smooth, which improves mechanical and electrical properties. | 2015-05-21 |
20150140816 | PRE-TREATMENT METHOD FOR PLATING AND STORAGE MEDIUM - Catalytic metal nanoparticles can be attached on a base. A pre-treatment method for plating includes a catalytic particle-containing film forming process of forming a catalytic particle-containing film on a surface of a substrate by supplying, onto the substrate, a catalytic particle solution which is prepared by dispersing the catalytic metal nanoparticles and a dispersing agent in a solvent containing water; a first heating process of removing moisture contained at least in the catalytic particle-containing film by heating the substrate to a first temperature; and a second heating process of polymerizing the dispersing agent to have a sheet shape by heating the substrate to a second temperature higher than the first temperature after the first heating process and fixing the catalytic metal nanoparticles on a base layer by covering the catalytic metal nanoparticles with the sheet-shaped dispersing agent. | 2015-05-21 |
20150140817 | APPARATUSES FACILITATING FLUID FLOW INTO VIA HOLES, VENTS, AND OTHER OPENINGS COMMUNICATING WITH SURFACES OF SUBSTRATES OF SEMICONDUCTOR DEVICE COMPONENTS - A method for removing material from surfaces of at least a portion of at least one recess or at least one aperture extending into a surface of a substrate includes pressurizing fluid so as to cause the fluid to flow into the at least one recess or the at least one aperture. The fluid may be pressurized by generating a pressure differential across the substrate, which causes the fluid to flow into or through the at least one aperture or recess. Apparatus for pressurizing fluid so as to cause it to flow into or through recesses or apertures in a substrate are also disclosed. | 2015-05-21 |
20150140818 | METHODS AND SYSTEMS FOR CHEMICAL MECHANICAL POLISH CLEANING - The present disclosure provides a cleaning unit for a chemical mechanical polishing (CMP) process. The cleaning unit comprises a cleaning solution; a brush configured to scrub a wafer during the CMP process; and a spray nozzle configured to apply the cleaning solution to the wafer when the brush scrubs the wafer during the CMP process. In some embodiments, the spray nozzle includes an inlet where the cleaning solution enters the spray nozzle and an outlet where the cleaning solution exits the spray nozzle. In some embodiments, an inlet area (A | 2015-05-21 |
20150140819 | SEMICONDUCTOR PROCESS - A semiconductor process includes the following steps. A substrate having trenches with different sizes is provided. A first oxide layer is formed to entirely cover the substrate. A prevention layer is formed on the first oxide layer. A first filling layer is formed on the prevention layer and fills the trenches until the first filling layer is higher than the substrate. A first polishing process is performed to polish the first filling layer until exposing the prevention layer. A second polishing process is performed to polish the first filling layer, the prevention layer and the first oxide layer until the substrate is exposed. | 2015-05-21 |
20150140820 | CLEANING AGENT FOR SEMICONDUCTOR SUBSTRATES AND METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE SURFACE - A cleaning agent is provided for a semiconductor substrate superior in corrosion resistance of a tungsten wiring or a tungsten alloy wiring, and superior in removal property of polishing fines (particle) such as silica or alumina, remaining at surface of the semiconductor substrate, in particular, at surface of a silicon oxide film such as a TEOS film, after a chemical mechanical polishing process; and a method for processing a semiconductor substrate surface. A cleaning agent for a semiconductor substrate is to be used in a post process of a chemical mechanical polishing process of the semiconductor substrate having a tungsten wiring or a tungsten alloy wiring, and a silicon oxide film, comprising (A) a phosphonic acid-based chelating agent, (B) a primary or secondary monoamine having at least one alkyl group or hydroxyalkyl group in a molecule and (C) water, wherein a pH is over 6 and below 7. | 2015-05-21 |
20150140821 | ETCHING METHOD AND ETCHING APPARATUS - An etching method is provided that includes the steps of supplying an etching gas containing a fluorocarbon (CF) based gas into a processing chamber, generating a plasma from the etching gas, and etching a silicon oxide film through a polysilicon mask using the plasma. The polysilicon film has a predetermined pattern and is arranged on the silicon oxide film. The silicon oxide film has at least one of a silicon content per unit volume, a fluorine content per unit volume, and a volume density that varies in a depth direction. | 2015-05-21 |
20150140822 | MULTILAYER FILM ETCHING METHOD AND PLASMA PROCESSING APPARATUS - In one embodiment of the present invention, there is provided a method for etching a multilayer film formed by laminating a plurality of alternating layers of a first layer having a first dielectric constant and a second layer having a second dielectric constant. This method includes (a) a multilayer film etching step, in which an etchant gas is supplied into a processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the etchant gas; and (b) a resist mask reducing step in which an oxygen-containing gas and a fluorocarbon-based gas are supplied to the processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the oxygen-containing gas and the fluorocarbon-based gas. In this method, the steps (a) and (b) are alternately repeated. | 2015-05-21 |
20150140823 | SILICON ETCHING METHOD - A silicon etching method of etching a silicon substrate to form silicon trenches having different width dimensions includes: S | 2015-05-21 |
20150140824 | JIG, MANUFACTURING METHOD THEREOF, AND FLIP CHIP BONDING METHOD FOR CHIPS OF ULTRASOUND PROBE USING JIG - A jig includes a wafer including an accommodation groove configured to accommodate a capacitive micromachined ultrasonic transducer (cMUT) when flip chip bonding is performed, and a separation groove formed in a bottom surface of the accommodation groove, the separation groove having a bottom surface that is spaced apart from thin films of the cMUT that face the bottom surface of the separation groove when the cMUT is seated on portions of the bottom surface of the accommodation groove. | 2015-05-21 |
20150140825 | Method for Chemical Polishing and Planarization - A chemical planarization process described herein can be used for planarizing a substrate without using mechanical abrasion. A developable planarization material can be applied to a substrate having a non-planar topography, such that a planar surface results. The resulting planarization layer can cover existing structures on the substrate. A top portion of the planarization layer can be solubilized using a solubility-changing agent, and then the soluble portion can be removed thereby slimming a height of the planarization material to a target value, which can be a top surface of a tallest underlying structure. With the substrate planarized, additional patterning operations can be executed. | 2015-05-21 |
20150140826 | Method of Forming Fine Patterns - A method of forming a fine pattern comprises depositing a modifying layer on a substrate. A photoresist layer is deposited on the modifying layer, the photoresist layer having a first pattern. The modifying layer is etched according to the first pattern of the photoresist layer. A treatment is performed to the etched modifying layer to form a second pattern, the second pattern having a smaller line width roughness (LWR) and/or line edge roughness (LER) than the first pattern. The second pattern is then etched into the substrate. | 2015-05-21 |
20150140827 | METHODS FOR BARRIER LAYER REMOVAL - Implementations described herein generally relate to semiconductor manufacturing and more particularly to methods for etching a low-k dielectric barrier layer disposed on a substrate using a non-carbon based approach. In one implementation, a method for etching a barrier low-k layer is provided. The method comprises (a) exposing a surface of the low-k barrier layer to a treatment gas mixture to modify at least a portion of the low-k barrier layer and (b) chemically etching the modified portion of the low-k barrier layer by exposing the modified portion to a chemical etching gas mixture, wherein the chemical etching gas mixture includes at least an ammonium gas and a nitrogen trifluoride gas or at least a hydrogen gas and a nitrogen trifluoride gas. | 2015-05-21 |
20150140828 | ETCHING METHOD AND PLASMA PROCESSING APPARATUS - A method of etching an etching target layer containing polycrystalline silicon includes preparing a target object including the etching target layer and a mask formed on the etching target layer; and etching the etching target layer with the mask. Further, the mask includes a first mask portion formed of polycrystalline silicon and a second mask portion interposed between the first mask portion and the etching target layer and formed of silicon oxide. Furthermore, in the etching of the etching target layer, a first gas for etching the etching target layer, a second gas for removing a deposit adhering to the mask, and a third gas for protecting the first mask portion are supplied into a processing vessel in which the target object is accommodated, and plasma of these gases is generated within the processing vessel. | 2015-05-21 |
20150140829 | METHOD FOR SEMICONDUCTOR MANUFACTURING - A method includes followings operations. A semiconductor substrate is provided. A photoresist is formed on the semiconductor substrate. Dopants are inserted into the photoresist to carbonize a portion of the photoresist. An etch steam is sprayed on the semiconductor substrate and the photoresist. A hole is formed at a surface of the photoresist by the etch steam. The etch steam is flowed into the hole so as to remove a portion of the photoresist at an interface between the semiconductor substrate and the photoresist. The photoresist is decorticated from the semiconductor substrate. | 2015-05-21 |
20150140830 | METHOD FOR IMPROVING QUALITY OF SPALLED MATERIAL LAYERS - Methods for removing a material layer from a base substrate utilizing spalling in which mode III stress, i.e., the stress that is perpendicular to the fracture front created in the base substrate, during spalling is reduced. The substantial reduction of the mode III stress during spalling results in a spalling process in which the spalled material has less surface roughness at one of its' edges as compared to prior art spalling processes in which the mode III stress is present and competes with spalling. | 2015-05-21 |
20150140831 | CRACK CONTROL FOR SUBSTRATE SEPARATION - A method for separating a layer for transfer includes forming a crack guiding layer on a substrate and forming a device layer on the crack-guiding layer. The crack guiding layer is weakened by exposing the crack-guiding layer to a gas which reduces adherence at interfaces adjacent to the crack guiding layer. A stress inducing layer is formed on the device layer to assist in initiating a crack through the crack guiding layer and/or the interfaces. The device layer is removed from the substrate by propagating the crack. | 2015-05-21 |
20150140832 | HIGH VACUUM OLED DEPOSITION SOURCE AND SYSTEM - Sources, devices, and techniques for deposition of organic layers, such as for use in an OLED, are provided. A vaporizer may vaporize a material between cooled side walls and toward a mask having an adjustable mask opening. The mask opening may be adjusted to control the pattern of deposition of the material on a substrate, such as to correct for material buildup that occurs during deposition. Material may be collected from the cooled side walls for reuse. | 2015-05-21 |
20150140833 | METHOD OF DEPOSITING A LOW-TEMPERATURE, NO-DAMAGE HDP SIC-LIKE FILM WITH HIGH WET ETCH RESISTANCE - Embodiments of the invention generally relate to methods of forming an etch resistant silicon-carbon-nitrogen layer. The methods generally include activating a silicon-containing precursor and a nitrogen-containing precursor in the processing region of a processing chamber in the presence of a plasma and depositing a thin flowable silicon-carbon-nitrogen material on a substrate using the activated silicon-containing precursor and a nitrogen-containing precursor. The thin flowable silicon-carbon-nitrogen material is subsequently cured using one of a variety of curing techniques. A plurality of thin flowable silicon-carbon-nitrogen material layers are deposited sequentially to create the final layer. | 2015-05-21 |
20150140834 | al2o3 surface nucleation preparation with remote oxygen plasma - Methods and apparatus for processing using a plasma source for the treatment of semiconductor surfaces are disclosed. The apparatus includes an outer vacuum chamber enclosing a substrate support, a plasma source (either a direct plasma or a remote plasma), and an optional showerhead. Other gas distribution and gas dispersal hardware may also be used. The plasma source may be used to generate activated species operable to alter the surface of the semiconductor materials. Further, the plasma source may be used to generate activated species operable to enhance the nucleation of deposition precursors on the semiconductor surface. | 2015-05-21 |
20150140835 | SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM - A substrate processing apparatus is disclosed. The substrate processing apparatus includes a process chamber configured to accommodate a substrate; a gas supply unit configured to supply a process gas into the process chamber; a lid member configured to block an end portion opening of the process chamber; an end portion heating unit installed around a side wall of an end portion of the process chamber; and a thermal conductor installed on a surface of the lid member in an inner side of the process chamber, and configured to be heated by the end portion heating unit. | 2015-05-21 |
20150140836 | Methods to Control SiO2 Etching During Fluorine Doping of Si/SiO2 Interface - Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. Methods are disclosed that discuss the use of blocking species that bind to the surface of the dielectric and retard the etching of the dielectric surface by a doping/passivating species. The surface of the dielectric may be exposed to the blocking species a plurality of times during the process to ensure that the surface is well protected. | 2015-05-21 |
20150140837 | METHOD FOR TEXTURING A SUBSTRATE HAVING A LARGE SURFACE AREA - The invention relates:
| 2015-05-21 |
20150140838 | Two Step Deposition of High-k Gate Dielectric Materials - Methods and apparatus for forming a dielectric layer for use as a gate dielectric are provided. A high-k layer is formed with first ALD process using a halogen-based precursor. The metal in the halogen-based precursor may be at least one of hafnium, zirconium, or titanium. The halogen in the halogen-based precursor may be at least one of fluorine, chlorine, or iodine. In some embodiments, the halogen-based metal precursor includes hafnium chloride. The remainder of the high-k layer is formed with second ALD process using a metal organic-based precursor. The metal in the metal organic-based precursor may be at least one of hafnium, zirconium, or titanium. The organic ligands in the metal organic-based precursor may be at least one of β-diketonate precursors, alkoxide precursors, amino precursors. In some embodiments, the metal organic-based precursor includes amino precursors. | 2015-05-21 |
20150140839 | SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus, which comprises a process chamber configured to process a substrate, a first plasma generation chamber in the process chamber, a first reactive gas supply unit configured to supply first reactive gas into the first plasma generation chamber, a pair of first discharge electrodes configured to generate plasma and to excite the first reactive gas, a first gas ejection port installed in a side wall of the first plasma generation chamber to eject an active species toward the substrate, a second plasma generation chamber in the process chamber, a second reactive gas supply unit configured to supply second reactive gas into the second plasma generation chamber, a pair of second discharge electrodes configured to generate plasma and to excite the second reactive gas, and a second gas ejection port installed in a side wall of the second plasma generation chamber to eject an active species. | 2015-05-21 |
20150140840 | CONNECTOR - A connector is mateable with a mating connector along an up-down direction under a mounted state where the connector is mounted on a circuit board. The mating connector is mounted on a mating circuit board. The connector comprises a housing, a regulation member and a contact. The regulation member has an insulation portion and a metal portion. The insulation portion is supported by the metal portion. The metal portion is fixed to the housing. The contact is press-fit in the housing from below to be held by the housing. The contact has a connection portion and a resilient portion. The connection portion is fixed to an upper surface of the circuit board under the mounted state. The resilient portion has a lower-end portion. The lower-end portion of the resilient portion is located below the connection portion and located right above the insulation portion. The resilient portion is resiliently deformable downward. | 2015-05-21 |
20150140841 | RECEPTACLE CONNECTOR AND METHOD OF PRODUCING RECEPTACLE CONNECTOR - A receptacle connector includes a receptacle insulator having an annular outer peripheral wall which defines a fitting recess; receptacle contacts; and a receptacle-side metal fixing member. When a projecting fitting portion of a plug insulator of a plug connector is fitted into the fitting recess, plug contacts of the plug connector come into contact with the receptacle contacts, and the plug connector comes into contact with the receptacle-side metal fixing member. The receptacle-side metal fixing member and the receptacle insulator are integrally formed by insert molding, and the receptacle-side metal fixing member includes a resilient contact portion which is spaced from a surface of the outer peripheral wall on the circumferentially inner side thereof when the resilient contact portion is in a free state. | 2015-05-21 |
20150140842 | RECEPTACLE CONNECTOR - A receptacle connector includes a main body, an insulating base, a tenon member, a compressing spring, and a cap body. The main body includes a first concave area. The insulating base includes a second concave area. The first and the second concave area constitute a joint cavity and an opening. The tenon member erected on the bottom surface of the first concave area and is threaded through the compression spring. The cap body includes a sheath portion slidably threaded through the tenon member and a cover portion occupied a part of the opening. The sheath portion is connected to the compression spring and when the sheath portion of the cap body compresses the compression spring, the cover portion of the cap body is capable of moving from a closing position to an accessing position relative to the opening. | 2015-05-21 |
20150140843 | CABLE CONNECTOR ASSEMBLY HAVING SEVERAL PLUG CONNECTORS - A cable connector assembly ( | 2015-05-21 |
20150140844 | DETACHABLE ELECTRICAL CONTACT CONNECTION - A releasable electrical contact connection is formed between a first plug part and a complementary second plug part. The first plug part has an electrically conductive screw bolt on which a cable end can be mechanically and electrically connected by a threaded nut, the cable end and the threaded nut being part of the second plug connector. The cable end and the threaded nut are disposed in an insulating plug housing of the second plug part and are held movably in the direction of a longitudinal axis of the screw bolt in the plug housing, in order to establish or release the electrical and mechanical connection. The threaded nut can be rotated from outside the plug housing. The plug housing is surrounded by an insulating housing wall of the first plug part. | 2015-05-21 |
20150140845 | OUTLET UNIT FACILITATING PLUG SEPARATION, AND MULTI-OUTLET DEVICE USING SAME - The present invention relates to an outlet unit facilitating plug separation and to a multi-outlet device using same. The outlet unit according to the present invention includes: an outlet main body having a plug inlet into which a plug is to be inserted, a bottom surface plate forming the bottom surface of the plug inlet and having a pair of terminal ports formed on the plate surface such that the terminals of a plug may be inserted, and a pair of electrodes which are disposed in the lower portion of the bottom surface plate and with which the terminals of the plug connect; a separation plate in which a pair of plug through-holes, through which the terminals of the plug pass, are formed on the plate surface and which is disposed in a raisable manner in the plug inlet so as to be capable of moving between a connection position, in which the terminals of the plug are lowered so as to be capable of being connected to the electrodes through the plug through-holes and the terminal ports, and a connection release position, in which the plug is lifted such that the terminals of the plug are separated from the electrodes; and a separation operation module which lifts the separation plate to the connection release position according to a user operation when the separation plate is placed in the connection position. | 2015-05-21 |
20150140846 | CONNECTOR - Out of resilient contact pieces ( | 2015-05-21 |
20150140847 | WATERPROOF CONNECTOR - A waterproof connector includes a housing ( | 2015-05-21 |
20150140848 | CONNECTOR AND INJECTION METHOD FOR FILLER MATERIAL - A connector includes a connector housing, an inner plate that supports a terminal connected to a one end portion of an electric wire and that is accommodated in an inside of the connector housing, and filler material that fills the inside of the connector housing which has accommodated the inner plate and that is then hardened so as to cover a connection part of the electric wire and the terminal. The filler material adheres to a first portion within an inner surface of the connector housing and to an outer surface of the inner plate. A release layer is provided between a second portion within the inner surface of the connector housing and an outer surface of the filler material opposite to the second portion. | 2015-05-21 |
20150140849 | CONNECTOR WITH INTEGRAL FUSE HOLDER - A connector with an integral fuse holder is described herein. The connector can include a portion having a fuse receiver disposed within a cavity and coupled to an electrical connection feature. The connector can include an end coupled to the portion, where the end includes a wall that forms a cavity. The connector can further include a fuse assembly having a contact member, a fuse, a fuse holder, and a conductor receiver. The contact member can couple to the electrical connection feature. The fuse holder can include a first end that couples to a top end of the fuse and the contact member, and a second end that couples to a bottom end of the fuse. The conductor receiver can couple to the second end of the fuse holder and to the bottom end of the fuse. A receiving feature of the conductor receiver can couple to a conductor. | 2015-05-21 |
20150140850 | SHIELD CONNECTOR STRUCTURE - A shield connector structure includes: a connection member fixed to the outer surface of a metal case; a first seal member interposed between an inner surface of the connection member and an outer surface of an outer insulation coating of a shield wire; a second seal member interposed between the connection member and an inner surface of an insertion hole of the metal case; and an annular fixing member that fixes a shield portion of the shield wire to the connection member by crimping. The connection member includes a first cylindrical extension portion extending from the connection member body to the inside of the insertion hole of the metal case and a second cylindrical extension portion further extending from the tip of the first extension portion and having an outer diameter smaller than that of the first extension portion. The shield portion is clamped by the fixing member. | 2015-05-21 |
20150140851 | SHIELD CONNECTOR STRUCTURE - A shield connector is provided with: a housing fixed to an outer surface of a metal case; a shield member; a first seal member interposed between the shield member and a shield wire; and a second seal member interposed between the shield member and an insertion hole, the housing having an extension portion extending from a housing body to the insertion hole, the first seal member having a first close contact portion coming into close contact with an outer insulation coating, a second close contact portion coming into close contact with the shield member, and an annular groove portion opened to the outer side of the metal case between the first close contact portion and the second close contact portion, the extension portion of the housing being inserted into the groove portion of the first seal member. | 2015-05-21 |
20150140852 | Electrical Connector - An electrical connector that includes a connector housing and a contact housing. The connector housing has a contact receiving space with a front opening and a rear opening and a sealing rib extending into the contact receiving space. The contact housing is disposed in the contact receiving space and abuts the sealing rib. An intermediate space, between the contact housing and the connector housing has a front portion and a rear portion being delimited by the sealing rib. An intermediate component is disposed in the rear portion of the intermediate space. | 2015-05-21 |
20150140853 | ELECTRIC CONNECTOR AND DETECTION TERMINAL INCLUDED THEREIN - An electric connector includes a housing to be fit into a second electric connector, a lock arm resiliently deforming when the lock arm makes contact with an engagement part of the second electric connector, and thereafter, returning back to its original position, when the electric connector and the second electric connector are coupled to each other, a first detection terminal for detecting whether the electric connector and the second electric connector are electrically connected to each other, and a unit for assisting the lock arm to return back to the original position, the lock arm, the first detection terminal, and the unit being arranged in the housing, the detection terminal including a first portion to be fixed relative to the lock arm, and a second portion to make contact with a second detection terminal of the second electric connector. | 2015-05-21 |
20150140854 | COAXIAL CABLE CONNECTOR WITH CONTINUITY BUS - A coaxial cable connector includes a continuity bus that extends a ground circuit from a coaxial cable outer conductor to a connector part such as a connector fastener and/or a connector post. | 2015-05-21 |
20150140855 | Insulation Piercing Battery Connector - The present invention relates to a flexible connector for attaching electrical accessories to an industrial battery electrical cable. The connector includes a housing and an electrically conductive pin that is positioned within the housing and protrudes through a cable mating surface of the housing. The connector also includes a fuse positioned within the housing and electrically connected to the portion of the pin within the housing, and a conductive wire, wherein at least a portion of the wire is positioned within the housing and electrically connected to the fuse. At least the cable mating surface of the housing is suitably flexible to conform to the contours of an electrical cable insulation surface when the pin pierces through the insulation surface of the electrical cable to which the connector is attached. | 2015-05-21 |
20150140856 | Crimped Terminal Attached Aluminum Electric Wire - A crimped terminal attached aluminum electric wire includes an aluminum electric wire that includes a conductor part made of aluminum or aluminum alloy and an insulative coating part which surrounds the periphery of the conductor part, and a crimped terminal that is crimped to the conductor part which is exposed by removing the insulative coating part at an end of the aluminum electric wire. The crimped terminal includes a conductor crimping part which is crimped to the exposed conductor part, and an end side conductor crimping part which is formed at an end at the side of the crimped terminal to which the aluminum electric wire is connected, and which is crimped to the conductor part at a radial compression rate which is smaller than that at which the conductor part is crimped by the conductor crimping part. | 2015-05-21 |
20150140857 | Aluminum Electrical Wire with Crimped Terminal and Method for Producing Aluminum Electrical Wire with Crimped Terminal - Provided is an aluminum cable with crimping terminal in which a copper or copper alloy crimping terminal is crimped to a conductor that is exposed by peeling off an insulating covering member in a terminal portion of an aluminum cable in which an outer periphery of the conductor constituted by twisting a plurality of aluminum or aluminum alloy strands is covered with the insulating covering member. A water-repellent treatment with a water-repellent agent including a solvent having water-repellency is performed with respect to the conductor. | 2015-05-21 |
20150140858 | ELECTRICAL CONNECTOR - Provided is an electrical connector without making the manufacturing process complicated and without increasing the size and the manufacturing cost, wherein, an electrical connector includes a holddown attached to a body part of a second insulating housing and fixed to a circuit board P. The holddown is formed of a single metal sheet, and includes a held part held by body part, leg parts extending from the held part, protruding from opposed faces facing the circuit board of the body part placed on the circuit board, and being fixed to the circuit board, and an extension part extending from the held part in a direction parallel to a direction in which a counterpart connector is engaged. | 2015-05-21 |
20150140859 | COAXIAL CONNECTOR - A coaxial connector includes an inner tube, an outer tube, a center connector unit and a resilient member. The inner and outer tube each have a first/second body, and each of the first and second bodies has a semi-circular first/second tubular portion. A first flange extends outward from the front end of the first tubular portion. The outer tube has a first stepped portion formed in the inside of the front end of the second tubular portion thereof. The center connector unit is securely located in the first and second bodies. The resilient member has a curved body with two legs bent from two ends thereof. The curved body of the resilient member is engaged between the first flange and the first stepped portion. The legs extend beyond the first and second tubular portions. The coaxial connector is easily assembled and has lower manufacturing cost. | 2015-05-21 |
20150140860 | Plug-in Connector, Control Apparatus and Method for Producing a Control Apparatus - A plug-in connector for a control apparatus has at least one contact pin which passes through a base section of a support body of the plug-in connector and can be connected electrically and mechanically to a printed circuit board of the control apparatus. The support body of the plug-in connector has a trough, which is formed by the base section, a groove laterally surrounding the base section and a side edge laterally surrounding the groove. The trough can be filled with a sealing compound such that the compound extends within the trough integrally from the groove to the contact pin and covers the base section in certain places or completely. A control apparatus and a method for producing a control apparatus are also described. | 2015-05-21 |
20150140861 | HIGH DENSITY CONNECTOR - A connector can be provided that allows for improved route-out including straight-back routing. Signal and ground terminal tails can be arranged in a single row to help facilitate such functionality. Consequentially, a connector with two vertically stacked card slots can be provided that allows for straight back routing of the signal traces in four layers while still providing a compact connector design. | 2015-05-21 |
20150140862 | Actuation System and Lithographic Apparatus - Actuation systems and lithographic apparatus which address the issue of uncontrolled return of common mode currents are provided. In an embodiment such systems aim to prevent the occurrence of corona and discharge between high voltage electric cables in low pressure environments. An exemplary actuation system includes an actuator module, a power source and power transmission cables. The actuator module includes an electrical motor and a first plurality of shielded cables configured to connect to the electrical motor at one end. The actuator module is located in a low pressure environment and each shield of the first plurality of cables is grounded. The transmission cables electrically connect the first plurality of cables with power supply, and include an extra cable configured to connect each shield of the first plurality of cables with the first extra cable, via a choke so as to provide a return path for common-mode currents. | 2015-05-21 |
20150140863 | SHIELDED CONNECTOR ASSEMBLY - A connector assembly according to embodiments of the present disclosure is advantageously configured to allow a sensor connector to straightforwardly and efficiently join with and detach from a patient cable connector. Further, embodiments of the connector assembly advantageously reduce un-shielded area in an electrical connection between a patient cable and a sensor connector. In addition, embodiments of the connector assembly advantageously increase the shielding of detector signals coming from the patient sensor to the monitor. | 2015-05-21 |
20150140864 | ARRANGEMENT FOR CONTACTING A SCREEN OF AN ELECTRICAL HIGH VOLTAGE CABLE - An arrangement for contacting an electrical screen includes an armature that has at least two ring shaped contact elements, a first contact element, and a second contact element which, in the assembly position, are connected to each other by a screw connection. The first contact element has a conical outer surface which widens toward the end of the high voltage cable and surrounds the cable strand of the high voltage cable. The second contact element is attached to parts of the screw connection and has a conical inner surface which also widens toward the end of the high voltage cable and which extends in the assembly position parallel to the outer surface of the first contact element. | 2015-05-21 |
20150140865 | PIN SPACERS FOR CONNECTOR ASSEMBLIES - A connector assembly includes a housing, a plurality of contact modules received in the housing, and a pin spacer coupled to the contact modules. Each contact module has a plurality of contacts each including a pin extending from a bottom of the corresponding contact module. The pin spacer has a plurality of pin holes extending through the pin spacer. The pin holes receive corresponding pins for mounting to the circuit board. The pin spacer holds relative positions of the pins. The pin spacer has side edges at opposite sides of the pin spacer and lugs extending from the top of the pin spacer proximate to the sides of the pin spacer. The lugs block entry into a space defined between the bottoms of the contact modules and the top of the pin spacer. | 2015-05-21 |
20150140866 | ELECTRICAL CONNECTOR HAVING AN INSULATIVE PLATE WITH A SLOT - An electrical connector including an insulative housing defining a mating port in a transverse direction, a top wall and a bottom wall horizontally extending in two sides of the mating port, and a number of terminal passageways; and a terminal module received in the insulative housing, the terminal module comprising an insulative plate extending along the transverse direction and a number of conductive terminals insert molded in the insulative plate, the conductive terminal having a fixed section in the insulative plate and a contact section extending from the fixed section and received in a corresponding terminal passageway, the conductive terminals comprising a number of pairs of differential signal terminals for transmitting differential signal; wherein the insulative plate has a number of slots, the slot having two opposite edges, the pair of signal terminals having closer inner edges, the inner edge being between two opposite edges of the slot. | 2015-05-21 |
20150140867 | POWER PLUG EXTENDER - A power plug extender includes a bottom three-pin plug portion and a top three-pin plug receptacle portion. The top power plug receptacle portion is rotated to have a rotational offset angle between thirty degrees and sixty degrees with respect to the bottom plug portion. | 2015-05-21 |
20150140868 | CONNECTOR RECEPTACLE WITH SIDE GROUND CONTACTS - Connector receptacles having a contoured form factor that allows their use in stylized enclosures. These receptacles may also be contoured to avoid circuitry internal to the device enclosure. The contoured form factor may also simplify the assembly of the connector receptacle. | 2015-05-21 |
20150140869 | ELECTRIC CONNECTOR AND FIXER USED THEREFOR - An electric connector to be mounted on a printed circuit board, includes a housing having an inner space into which a second electric connector is inserted in a direction in which a plane of the printed circuit board is extensive, and at least one fixer through which the housing is fixed on the printed circuit board, the fixer including an extending portion extending from a floor portion of the housing towards outside of the housing, and making contact at a lower surface thereof with a surface of the printed circuit board, the extending portion being fixed at a lower surface thereof on the surface of the printed circuit board to cause the electric connector to be fixed on the surface of the printed circuit board. | 2015-05-21 |
20150140870 | SPRING-LOADED CONTACTS - Spring-loaded contacts having an improved reliability. One example may provide spring-loaded contacts having a reduced likelihood of entanglement between a spring and a plunger. For example, a piston may be placed between a plunger and a spring. The piston may have a head portion that is wider than the diameter of the spring and located between the spring and the plunger to isolate the spring and the plunger. In these and other examples, an additional object, such as a sphere, may be placed between the plunger and spring. In another example, two additional objects, such as two spheres, may be placed between a plunger and piston. | 2015-05-21 |
20150140871 | CONNECTOR FOR ELECTRICALLY CONNECTING TWO PANELS HAVING SWITCHGEAR - A connector for electrically connecting two panels having switchgear has: two cups having a truncated cone shape for arrangement in a panel, the cups each having a conductor end extending through the tip of the cone and into the cup; an insulating body having two opposite truncated cone shaped outer surfaces each for reception in one of the cups and having a central passage; an electrically conducting element for connecting with the conductor ends extending in the central passage of the insulating body; wherein the insulating body is a molded body having an earth wire molded in; and wherein a coating of an electrical conducting layer is arranged on the earth wire and at least part of the insulating body. | 2015-05-21 |
20150140872 | Battery Cable Connector with Open Back Handle - An improved battery cable clamp is provided with an integral T shaped connecting rod mounted in the handle of the clamp. | 2015-05-21 |
20150140873 | Crimped Terminal Attached Aluminum Electric Wire | 2015-05-21 |
20150140874 | Aluminum Cable Provided with Crimping Terminal - A crimping portion includes a first crimping portion including a conductor crimping portion and a conductor enveloping portion that is integrally connected to the conductor crimping portion and envelops a portion of a conductor in the vicinity of an insulating covering portion, and a second crimping portion that is separate from the first crimping portion and crimped to the insulating covering portion in the vicinity of the conductor. A gap between the first crimping portion and the second crimping portion is sealed with a sealer, and thus the first crimping portion and the second crimping portion are integrally interconnected to each other. | 2015-05-21 |
20150140875 | CONNECTION TERMINAL - Provided is a connection terminal including: a conductive plate including a connection unit having a ring shape, and an extension unit integrally formed with the connection unit and extending from one side of the connection unit; and a connection cable electrically connected to the conductive plate, wherein the conductive plate further includes a damping portion formed as a part of the extension unit and bent to protrude along a direction perpendicular to the connection unit. | 2015-05-21 |
20150140876 | Pin Contact Comprising A Contact Body Produced As A Stamped Bent Part And A Solid Contact Pin - A pin contact for an electrical connector is disclosed having a contact body and a pin. The contact body is formed from a metal sheet and has a mating end, a pin receiving space and an offset wall. The pin receiving space extends inward from the mating end. The offset wall has at least one welding region, and an outer surface facing away from the welding region and accessible from the outside. The pin is positioned in the pin receiving space and projects out of the mating end. The pin is welded to the welding region. | 2015-05-21 |
20150140877 | MOUNT AND CONTROL SYSTEM FOR AN ELECTRIC OUTBOARD - Systems and methods for mounting and controlling a motor on a kayak are disclosed. A motor may be mounted to a kayak by a single interface on the kayak and rotated using foot pegs. The control system provides for responsive input and automatic directional stabilization of the motor. | 2015-05-21 |
20150140878 | WATERCRAFT - A watercraft, including; a mid section ( | 2015-05-21 |
20150140879 | LIFE SAVING DAN BUOY - A life saving dan buoy for marine saving is revealed. The life saving dan buoy includes a strip-shaped first air bag, a second air bag disposed on a lower part of the first air bag, at least one inflation valve arranged at the first air bag and/or the second air bag for filling gas into an air chamber and allowing the first and the second air bags to expand and float over the water, and a weight. The first air bag and the second air are communicating with each other to form the air chamber. The second air bag includes an open space area that allows a user's body to get through. The weight is connected to a lower part of the first air bag so that the first air bag is standing vertically in the sea while the second air bag is floated over the sea. | 2015-05-21 |
20150140880 | Pool Lounge that Facilitates Interactions between Two People - A floating pool lounge is disclosed. The floating pool lounge has a head end and a foot end, and includes an opening between the head end and the foot end. The opening extends through the thickness of the lounge and is sized to admit a human head. The pool lounge may also include handles disposed on respective sides, and a head and cervical support disposed around the opening toward the foot end. In some embodiments, particularly where the pool lounge is not rigid enough to resist movement, it may carry a series of connected channels or pockets, and substantially rigid frame members may be connected within the channels or pockets to rigidify the structure. | 2015-05-21 |
20150140881 | FUSER MEMBER AND COMPOSITION OF MATTER - Described is provided a composition of matter that includes a layer having a metal coated non-woven polymer fiber mesh. The metal coated non-woven polymer fiber mesh has pores of a size of from about 1 micron to about 50 microns, and a fluoropolymer dispersed on and throughout the metal coated non-woven polymer fiber mesh. A method of manufacturing is also provided. | 2015-05-21 |
20150140882 | FUSER MEMBER AND METHOD OF MANUFACTURE - A fuser member including a substrate and a release layer disposed on the substrate is described. The release layer includes a metal coated non-woven polymer fiber mesh wherein the metal coated non-woven polymer fiber mesh has pores of a size of from about 1 microns to about 50 microns and a fluoropolymer dispersed on and throughout the polymer matrix. A method of manufacturing the fuser member is also provided. | 2015-05-21 |
20150140883 | RESIN COMPOSITION FOR PRINTED CIRCUIT BOARD - A resin composition comprises a polyimide resin, a thermosetting resin, and a filler, the polyimide resin containing a first repeat unit represented by formula (I) and a second repeat unit represented by formula (III), wherein the ratio of the second repeat unit to the polyimide resin is between 5 and 80 mol %. | 2015-05-21 |
20150140884 | STRETCHABLE COATED FABRIC AND PROCESS FOR PRODUCING SAME - A stretchable coated fabric is treated for water repellency with a fluorinated water repellent that comprises a copolymer containing a perfluoroalkyl group with six or less carbon atoms (C6 fluorinated water repellent). The use of no C8 fluorinated water repellents that contain perfluorooctanoic acid, perfluorooctane sulfonate, and the like makes the fabric exerts no influence on the environment. And the fluorinated water repellent has a toluene repellency of 100 seconds or longer; a synthetic resin solution applied to at least one side of the stretchable fiber fabric has a thixotropic index at 23° C. in a range from 1.4 to 2.0; and the synthetic resin has a 100% modulus of 5 kgf/cm | 2015-05-21 |
20150140885 | INSULATING TAPE MATERIAL, METHOD FOR PRODUCTION AND USAGE THEREOF - An insulating tape material, a method for production and usage thereof, for producing electrical insulation paper such as mica paper, which is contained in thermally conductive insulating tapes that are used for high-voltage insulation, for example. The insulating tape material has fiber reinforcement by means of a fabric, wherein the meshes of the fabric are filled by a particle composite which is preferably thermally conductive. | 2015-05-21 |
20150140886 | ACTIVE FIBRE - An active fibre comprising material activated by an external stimulus, wherein the fibre has a first configuration in an unactivated state, and in response to activation by the external stimulus the fibre adopts a second, increased twist, configuration, relative to the first configuration, and wherein the fibre can reversibly move between the active state and the unactivated state. | 2015-05-21 |
20150140887 | PROPYLENE POLYMER FOR HIGH-TENACITY FIBERS AND NONWOVENS - Propylene polymers having a melt flow index in the range from 3.0 dg/min to 8.0 dg/min can be particularly suited for high-tenacity fibers and yarns and nonwovens. The propylene polymers can be produced by a process that includes polymerizing propylene or propylene and at least one comonomer in presence of a Ziegler-Natta polymerization catalyst, an aluminium alkyl, and hydrogen. | 2015-05-21 |
20150140888 | HEAT INSULATION SHEET AND METHOD OF MANUFACTURING SAME - A heat insulation sheet includes: a heat insulation layer formed as a nanofiber web form having a plurality of pores by electrospinning a polymeric material; and an adhesion layer laminated on one or both sides of the heat insulation layer and formed as a nanofiber web form by electrospinning an adhesion material, to thereby be made thin and have a plurality of fine pores, and to thus improve heat insulation performance. | 2015-05-21 |
20150140889 | METHOD FOR MANUFACTURING A LIQUID CRYSTAL DISPLAY PANEL AND A MANUFACTURING DEVICE THEREFOR - A manufacturing device for a liquid crystal display panel includes a stage including a first stage part and second stage part. The stage is configured to support a substrate laminate. A knife includes an entrance portion and a rigidity securing portion. The knife is configured to peel a support substrate of the substrate laminate. The stage is configured to rotate in a direction parallel with a surface of the stage. The rigidity securing portion of the knife is thicker than an entrance portion of the knife. | 2015-05-21 |
20150140890 | SPARK POLE - A spark pole is useful for controlling the movement of a rider of a wheeled device over a skating surface, and for generating sparks as the rider moves with respect to the skating surface. The spark pole has a shaft with a handle at one end and a grinding head at the other end. The grinding head supports at least one spark-producing body that generates sparks when it frictionally engages a skating surface. The grinding head also has a grinding head for frictional engagement with the skating surface to control the rider's movement along the skating surface. The shaft is preferably telescoping and adjustable in length. | 2015-05-21 |