20th week of 2022 patent applcation highlights part 65 |
Patent application number | Title | Published |
20220157543 | HIGH VOLTAGE VERTICAL BREAK DISCONNECT SWITCH WITH PLANETARY GEAR REDUCTION SWITCH DRIVE MECHANISM - A high voltage vertical break disconnect switch with a planetary gear reduction drive assembly including at least one stage operatively attached to a perpendicular rotatable insulator of the high voltage vertical break disconnect switch. The planetary gear reduction drive assembly includes a lower crankshaft part and a cooperating upper crankshaft part. The lower crankshaft part is solidly connected to the perpendicular rotatable insulator. The planetary gear reduction drive assembly includes an output that drives the upper crankshaft part. The upper crankshaft part drives a movable link assembly that causes a switch blade of the vertical break switch to open and close. | 2022-05-19 |
20220157544 | GAS SHUT-OFF SWITCH - Gas shut-off switch ( | 2022-05-19 |
20220157545 | Electric Device Comprising A Sealed Housing Having a Lower Housing Part and an Upper Housing Part - An electric device includes an electric component and a housing having a lower housing part and an upper housing part. The electric component is supported on the lower housing part. The lower housing part and the upper housing part surround a housing volume in which the electric component is sealingly encased. A weld is formed between the upper housing part and the lower housing part. One of the lower housing part and the upper housing part has a protrusion welded to the other one of the lower housing part and the upper housing part. A gap is disposed between the lower housing part and the upper housing part, the gap extending radially from the protrusion to an outside of the housing. A solidified molten material from the weld is at least partially received in the gap. | 2022-05-19 |
20220157546 | PROTECTION DEVICE INCLUDING RADIAL LEAD FUSE - Disclosed are various protection devices and associated methods. In some embodiments, a protection device may include a fuse assembly having a fusible link extending between a first lead end and a second lead end, and a first lead extending from the first lead end and a second lead extending from the second lead end. The protection device may further include a body including a first section coupleable with a second section, wherein the first and second sections define a central cavity housing the fusible link. The first section may include an interior face operable to engage an opposite interior face of the second section, an engagement member extending away from the interior face towards the second section, and an engagement channel adjacent the engagement member, the engagement channel operable to receive a corresponding engagement member of the second section. | 2022-05-19 |
20220157547 | MONITORING SYSTEMS AND METHODS FOR ESTIMATING THERMAL-MECHANICAL FATIGUE IN AN ELECTRICAL FUSE - Systems and methods for estimating a thermal-mechanical fatigue in an electrical conductor in a thermal-mechanical fatigue assessment system include an electrical conductor having a cold resistance and a non-linear resistance when connected to an electrical power system, and a controller receiving temperatures of the conductor as inputs, wherein the controller is operable to estimate a service life of the conductor based on at least the input temperatures of the conductor and the cold resistance of the conductor. | 2022-05-19 |
20220157548 | MODULAR HIGH VOLTAGE FUSE - A fuse including a fuse body having a main body portion formed of a dielectric material, a plurality of arc chambers formed in the main body portion, the arc chambers arranged in a matrix configuration, a conductor extending through the main body portion and intersecting the arc chambers, the conductor having bridge portions disposed within the arc chambers, the bridge portions being mechanically weaker than other portions of the conductor and configured to melt and separate upon the occurrence of an overcurrent condition in the fuse. | 2022-05-19 |
20220157549 | Multi-layer vacuum electron device and method of manufacture - Vacuum electron devices (VEDs) having a plurality of two-dimensional layers of various materials are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for device operation so that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together into a sandwich-like structure. The manufacturing process enables incorporation of metallic, magnetic, ceramic materials, and other materials required for VED fabrication while maintaining required positional accuracy and multiple devices per batch capability. | 2022-05-19 |
20220157550 | Magneto-electrostatic sensing, focusing, and steering of electron beams in vacuum electron devices - Vacuum electron devices (VEDs) are produced having a plurality of two-dimensional layers of various materials that are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for device operation so that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together using brazing, diffusion bonding, assisted diffusion bonding, solid state bonding, cold welding, ultrasonic welding, and the like. The manufacturing process enables incorporation of metallic, magnetic, and ceramic materials required for VED fabrication while maintaining required positional accuracy and multiple devices per batch capability. The VEDs so produced include a combination of magnetic and electrostatic lenses for electron beam control. | 2022-05-19 |
20220157551 | ELECTRON SOURCE AND ELECTRON SOURCE UNIT - [Object] To provide an electron source that is lightweight, simple in configuration, and capable of suppressing characteristic degradation or recovering characteristics without causing an increase in power consumption. | 2022-05-19 |
20220157552 | X-RAY TUBE FOR ANALYSIS - According to one embodiment, an analytical X-ray tube includes a vacuum enclosure with an output window to transmit X-rays, an anode target provided in the vacuum enclosure and opposing the output window, an anode support that supports the anode target. The anode support includes a distal end portion an outer diameter of which is smaller than an outer diameter of the anode target, and a rear side portion on a rear side of the distal end portion, an outer diameter of which is greater than the outer diameter of the anode target, and an outer surface of the rear portion is coated with a coating layer of a same material as that of the anode target. | 2022-05-19 |
20220157553 | METHOD FOR CONTROLLING OPERATION OF ELECTRON EMISSION SOURCE, ELECTRON BEAM WRITING METHOD, AND ELECTRON BEAM WRITING APPARATUS - A method for controlling operation of an electron emission source includes acquiring, while varying an emission current of an electron beam, a characteristic between a surface current of a target object at a position on the surface of the target object irradiated with the electron beam, and the emission current, calculating, based on the characteristic, first gradient values each obtained by dividing the surface current of the target object by the emission current, in a predetermined range of the emission current in the characteristic, calculating a second gradient value by dividing a surface current of the target object by an emission current in a state where the electron beam has been adjusted, and adjusting a cathode temperature to make the second gradient value in the state where the electron beam has been adjusted be in the range of the first gradient values in the predetermined range of the emission current. | 2022-05-19 |
20220157554 | MIXED GAS CLUSTER ION BEAM GENERATOR AND MASS SPECTROMETER INCLUDING THE SAME - A mixed gas cluster ion beam generator may include a nozzle chamber to contain a first mixed gas which is a mixed gas that is a mix of a first gas and a second gas, a cluster nozzle to spray gas received from the nozzle chamber in a cluster form, an ionizer to ionize a gas cluster sprayed by the cluster nozzle, and an ion accelerator to emit an ion beam to the outside by accelerating the gas cluster ionized by the ionizer by generating a potential difference to the ionized gas cluster. | 2022-05-19 |
20220157555 | SYSTEMS AND METHODS FOR MONITORING FAULTS, ANOMALIES, AND OTHER CHARACTERISTICS OF A SWITCHED MODE ION ENERGY DISTRIBUTION SYSTEM - Systems, methods and apparatus for applying a periodic voltage function are disclosed. An exemplary method comprises applying a modified periodic voltage function to an electrical node and monitoring the modified periodic voltage function over multiple cycles to monitor a relationship | 2022-05-19 |
20220157556 | WIEN FILTER AND CHARGED PARTICLE BEAM IMAGING APPARATUS - A Wien filter and a charged particle beam imaging apparatus are provided. The Wien filter Wien filter, including a Wien filter body which includes: an electrostatic deflector, including at least one pair of electrodes, respective two electrodes in each pair of which are opposite to each other, each electrode including an electrode body constructed in an arc-shaped form, and respective electrode bodies of respective two electrodes in each pair of the at least one pair of electrodes being arranged concentrically with and opposite to each other in a diameter direction, and the at least one pair of electrodes being configured to generate respective electric fields by cooperation of the respective two electrodes in each pair of the at least one pair of electrodes, in the condition of respective bias voltages applied individually thereon; and a magnetic deflector, including at least one pair of magnetic poles, respective two magnetic poles in each pair of which are opposite to each other, each magnetic pole including a magnetic pole body constructed in an arc-shaped form, and respective magnetic pole bodies of respective two magnetic poles in each pair of the at least one pair of magnetic poles being arranged concentrically with and opposite to each other in the diameter direction, and the magnetic pole bodies of the at least one pair of magnetic poles in the magnetic deflector and the electrode bodies of the at least one pair of electrodes in the electrostatic deflector being arranged concentrically and spaced apart from each other in a circumferential direction, and the at least one pair of magnetic poles being configured to generate respective magnetic fields by cooperation of respective two magnetic poles in each pair of the at least one pair of magnetic poles; a resultant electric field formed collectively by all of the respective electric fields is perpendicular to a resultant magnetic field formed collectively by all of the respective magnetic fields; and each electrode is also provided with a respective first protrusion extending radially inwards from a radial inner side of the respective electrode body thereof, and each magnetic pole is also provided with a second protrusion extending radially inwards from a radial inner side of the respective magnetic pole body thereof. | 2022-05-19 |
20220157557 | ROTATING SAMPLE HOLDER FOR RANDOM ANGLE SAMPLING IN TOMOGRAPHY - A sample holder retains a sample and can continuously rotate the sample in a single direction while the sample is exposed to a charged particle beam (CPB) or other radiation source. Typically, the CPB is strobed to produce a series of CPB images at random or arbitrary angles of rotation. The sample holder can rotate more than one complete revolution of the sample. The CPB images are used in tomographic reconstruction, and in some cases, relative rotation angles are used in the reconstruction, without input of an absolute rotation angle. | 2022-05-19 |
20220157558 | Charged Particle Beam Device and Analysis Method - A charged particle beam device includes: a charged particle beam source; an analyzer that analyzes and detects particles including secondary electrons and backscattered charged particles that are emitted from a specimen by irradiating the specimen with a primary charged particle beam emitted from the charged particle beam source; a bias voltage applying unit that applies a bias voltage to the specimen; and an analysis unit that extracts a signal component of the secondary electrons based on a first spectrum obtained by detecting the particles with the analyzer in a state where a first bias voltage is applied to the specimen, and a second spectrum obtained by detecting the particles with the analyzer in a state where a second bias voltage different from the first bias voltage is applied to the specimen. | 2022-05-19 |
20220157559 | ELECTRON MICROSCOPY GRID - An electron microscopy grid, includes: (i) a perforated substrate, (ii) a support film on the perforated substrate, the support film having a thickness of | 2022-05-19 |
20220157560 | METHOD AND DEVICE FOR PREPARING A MICROSCOPIC SAMPLE FROM A VOLUME SAMPLE - A method prepares a microsample from a volume sample using multiple particle beams. The method includes providing a volume sample in the microscope system, wherein the interior of the volume sample has a sample region of interest, and producing a macrolamella comprising the sample region of interest by removing sample material of the volume sample using one of the particle beams. The method also includes orienting the macrolamella relative to one of the particle beams, and removing sample material of the macrolamella via a beam so that the region of interest is exposed. | 2022-05-19 |
20220157561 | APPARATUS AND METHODS FOR CONTROLLING ION ENERGY DISTRIBUTION - Embodiments of the present disclosure generally relate to apparatus and methods for controlling an ion energy distribution during plasma processing. In an embodiment, the apparatus includes a substrate support that has a body having a substrate electrode for applying a substrate voltage to a substrate, and an edge ring electrode embedded for applying an edge ring voltage to an edge ring. The apparatus further includes a substrate voltage control circuit coupled to the substrate electrode, and an edge ring voltage control circuit coupled to the edge ring electrode. The substrate electrode, edge ring electrode, or both are coupled to a power module configured to actively control an energy distribution function width of ions reaching the substrate, edge ring, or both. Methods for controlling an energy distribution function width of ions during substrate processing are also described. | 2022-05-19 |
20220157562 | GAS HUB FOR PLASMA REACTOR - A gas distribution hub for a plasma chamber. The hub has a nozzle including a plurality of inner gas injection passage and a plurality of outer gas injection passages. The first plurality of gas injection passages are angularly spaced-apart arcuate channels at a first radial distance from a center of the hub, and the second plurality of gas injection passages are angularly spaced apart arcuate channels at a different second radial distance from the center of the hub | 2022-05-19 |
20220157563 | METHODS AND APPARATUS FOR ZONE CONTROL OF RF BIAS FOR STRESS UNIFORMITY - Methods and apparatus are used for adjusting film stress profiles on substrates. An apparatus may include a PVD chamber with a pedestal configured to support a substrate during processing on a cover positioned on an uppermost surface of the pedestal. The cover is constructed with multiple electrodes such as, for example, a first electrode, a second electrode, and a third electrode. The second electrode is positioned between and electrically separated from the first electrode and the second electrode. A substrate stress profile tuner is electrically connected to the first electrode, the second electrode, and the third electrode and configured to independently adjust an RF voltage level of at least the second electrode and the third electrode relative to RF ground to produce a more uniform film stress profile. | 2022-05-19 |
20220157564 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a first electrode in a substrate support in a chamber, a matcher coupled to the first electrode, a high frequency power supply, and a controller. The matcher includes a lower circuit in which a plurality of lower series circuits each including a capacitor and a switching element are coupled to each other in parallel and an upper circuit in which a plurality of upper series circuits each including a capacitor and a switching element are coupled to each other in parallel. The controller is configured to control the matcher to set the switching element to set one circuit of the lower circuit or the upper circuit, to wait until an amount of change in impedance becomes stable, the impedance changing depending on the setting, and to set the switching element to set another circuit of the lower circuit or the upper circuit. | 2022-05-19 |
20220157565 | SUBSTRATE TREATING APPARATUS AND IMPEDANCE MATCHING METHOD - Disclosed is an apparatus for treating a substrate. The apparatus includes: an RF power supply; a process chamber which performs plasma processing by using power applied from the RF power supply; and an impedance matching unit which is disposed between the RF power supply and the process chamber and performs matching, in which the RF power supply includes a first sensor measuring impedance in a direction of the process chamber and the impedance matching unit, and the impedance matching unit performs impedance matching by reflecting impedance measured in the RF power supply through the first sensor. | 2022-05-19 |
20220157566 | APPARATUS FOR AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - An apparatus for manufacturing a semiconductor device includes a chamber including a lower housing and an upper housing, heater chucks in the lower housing, shower heads on the heater chucks, the shower heads being between the lower housing and the upper housing, power supplies connected to the shower heads to provide radio-frequency powers to the shower heads, power straps in the upper housing to connect the shower heads to the power supplies, and shielding members in the upper housing, the shielding members enclosing the power straps and the shower heads, respectively, the shielding members to prevent electromagnetic interference of the radio-frequency powers between the power straps and between the shower heads. | 2022-05-19 |
20220157567 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus includes a processing chamber having a substrate support configured to support a substrate, a gas supply configured to supply a plurality of processing gases to the processing chamber, a plasma generator configured to generate plasma of the processing gases, and a controller configured to control the gas supply. The gas supply includes a first gas supply configured to supply a first processing gas to the processing chamber, and a second gas supply configured to inject a second processing gas to the first processing gas supplied to the processing chamber. | 2022-05-19 |
20220157568 | MULTI-LAYER PLASMA RESISTANT COATING BY ATOMIC LAYER DEPOSITION - Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of an article using an atomic layer deposition (ALD) process. The plasma resistant coating has a first layer and a second layer including a solid solution of Y | 2022-05-19 |
20220157569 | Plasma Source With Ceramic Electrode Plate - A plasma source assembly for use with a substrate processing chamber is described. The assembly includes a ceramic lower plate with a plurality of apertures formed therein. A method of processing a substrate in a substrate processing chamber including the plasma source assembly is also described. | 2022-05-19 |
20220157570 | PLASMA PROCESSING APPARATUS AND METHOD OF ADJUSTING THE SAME - Disclosed are a plasma processing apparatus and an adjusting method of the same. The apparatus includes: a vacuum chamber enclosed by a chamber body and a chamber lid; a movable upper electrode assembly disposed in the vacuum chamber; a bottom electrode assembly, arranged opposite the movable upper electrode assembly, the bottom electrode assembling being detachably connected with the bottom of the chamber body; a plurality of self-alignment devices each including a self-alignment upper structure and a self-alignment lower structure, the self-alignment upper structure and the self-alignment lower structure being connected to the movable upper electrode assembly and the bottom electrode assembly, respectively, wherein when the self-alignment upper structures and the self-alignment bottom structures are aligned to be jointed together, the center of the movable upper electrode assembly is aligned with that of the bottom electrode assembly. The disclosure offers the following advantages: through cooperation between the self-alignment upper structures and the self-alignment lower structures, the plasma processing apparatus realizes concentricity adjustment between the movable upper electrode assembly and the lower electrode assembly, rendering the self-alignment devices simple in structure and convenient to operate and alleviating testing pressures on operators. | 2022-05-19 |
20220157571 | BASE CONDUCTING LAYER BENEATH GRAPHITE LAYER OF CERAMIC CATHODE FOR USE WITH CATHODIC ARC DEPOSITION - Cathode structures are disclosed for use with pulsed cathodic arc deposition systems for forming diamond-like carbon (DLC) films on devices, such as on the sliders of hard disk drives. In illustrative examples, a base layer composed of an electrically- and thermally-conducting material is provided between the ceramic substrate of the cathode and a graphitic paint outer coating, where the base layer is a silver-filled coating that adheres to the ceramic rod and the graphitic paint. The base layer is provided, in some examples, to achieve and maintain a relatively low resistance (and hence a relatively high conductivity) within the cathode structure during pulsed arc deposition to avoid issues that can result from a loss of conductivity within the graphitic paint over time as deposition proceeds. Examples of suitable base material compounds are described herein where, e.g., the base layer can withstand temperatures of 1700° F. (927° C.). | 2022-05-19 |
20220157572 | DEPOSITION RING FOR THIN SUBSTRATE HANDLING VIA EDGE CLAMPING - Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes: a deposition ring including a first portion having an first inner ledge and a second portion having a second inner ledge, wherein in a first position, the first portion is spaced from the second portion, and wherein in a second position, the second portion is configured to engage the first portion so that the first inner ledge is aligned with the second inner ledge along a common plane to form a clamping surface. | 2022-05-19 |
20220157573 | EDGE RING AND SUBSTRATE PROCESSING APPARATUS - An edge ring disposed around a processing target substrate includes a first member of an annular shape, which is made of a first material and has a first inclined portion at a lower portion of an inner peripheral side surface thereof; and a second member of an annular shape, which is made of a second material different from the first material and has a second inclined portion facing the first inclined portion, the second member being provided under the first member. | 2022-05-19 |
20220157574 | RING FOR SUBSTRATE EXTREME EDGE PROTECTION - Embodiments of the present disclosure provide a method and an apparatus for processing a substrate. The apparatus has a ring assembly. The ring assembly has an edge ring and a shadow ring. The edge ring has a ring shaped body. The edge ring body has a top surface and a bottom surface. Pin holes extend through the edge ring body from the top surface to the bottom surface. The shadow ring has a ring shaped body. The shadow ring body has an upper surface and a lower surface. Sockets are formed on the lower surface, wherein the sockets in the shadow ring body align with the pin holes in the edge ring body. | 2022-05-19 |
20220157575 | APPARATUS FOR PLASMA PROCESSING AND PLASMA PROCESSING SYSTEM - An apparatus for plasma processing comprises: a support configured to support a substrate and an edge ring disposed around the substrate; a lifting mechanism configured to vertically move the edge ring; and a controller. The support includes a convex portion which protrudes upward and on which the substrate is mounted, a ring mounting portion on which the edge ring is mounted in a state in which the convex portion is inserted into the hole of the edge ring, and a temperature adjustment mechanism configured to adjust a temperature of the convex portion. The lifting mechanism and the temperature adjustment mechanism are configured to move the edge ring to a predetermined position at which the convex portion is in a state of being inserted into the hole of the edge ring and heat the convex portion of the support to expand it in a diametric direction thereof. | 2022-05-19 |
20220157576 | PLASMA PROCESSING APPARATUS - In order to be able to independently control a plasma density distribution both in a distribution with high center and a nodal distribution, and perform a plasma processing on a sample with higher accuracy for processing uniformity, a plasma processing apparatus includes: a vacuum vessel in which a plasma processing is performed on a sample; a radio frequency power source configured to supply radio frequency power for generating plasma; a sample stage on which the sample is placed; and a magnetic field forming unit configured to form a magnetic field inside the vacuum vessel and disposed outside the vacuum vessel, in which the magnetic field forming unit includes: a first coil; a second coil that is disposed closer to an inner side than the first coil and has a diameter smaller than a diameter of the first coil; a first yoke that covers the first coil, and an upper side and a side surface of the vacuum vessel, and in which the first coil is disposed; and a second yoke that covers the second coil along a peripheral direction of the second coil and has an opening below the second coil. | 2022-05-19 |
20220157577 | APPARATUS AND METHODS FOR CONTROLLING ION ENERGY DISTRIBUTION - Embodiments of the present disclosure generally relate to apparatus and methods for controlling an ion energy distribution during plasma processing. In an embodiment, the apparatus includes a substrate support that has a body having a substrate electrode for applying a substrate voltage to a substrate, and an edge ring electrode embedded for applying an edge ring voltage to an edge ring. The apparatus further includes a substrate voltage control circuit coupled to the substrate electrode, and an edge ring voltage control circuit coupled to the edge ring electrode. The substrate electrode, edge ring electrode, or both are coupled to a power module configured to actively control an energy distribution function width of ions reaching the substrate, edge ring, or both. Methods for controlling an energy distribution function width of ions during substrate processing are also described. | 2022-05-19 |
20220157578 | TEMPERATURE REGULATOR AND SUBSTRATE TREATMENT APPARATUS - A temperature regulator includes a first member, a channel, and a cavity. The first member has a first surface that is subjected to temperature control. The channel is along the first surface in the first member, and refrigerant flows in the channel. The cavity is provided in the first member adjacently to a flow rate change region of the channel. A flow rate of refrigerant in the flow rate change region is higher than a flow rate of refrigerant in another region of the channel. | 2022-05-19 |
20220157579 | STAGE, FILM-FORMING APPARATUS OR FILM-PROCESSING APPARATUS INCLUDING THE STAGE, AND METHOD FOR CONTROLLING TEMPERATURE OF SUBSTRATE - Disclosed is a stage including a shaft, a first supporting plate over the shaft, a heater arranged in a trench formed in the first supporting plate, and a gas-supplying tube arranged in the shaft and configured to blow a gas to the first supporting plate. The first supporting plate may have a disk shape, and a cross section of the gas-supplying tube parallel to a surface of the first supporting plate may overlap a center of the disk shape. The first supporting plate may be configured to block the gas so that the gas is not released to a chamber in which the stage is arranged. | 2022-05-19 |
20220157580 | DIAGNOSIS APPARATUS, PLASMA PROCESSING APPARATUS AND DIAGNOSIS METHOD - In a diagnosis apparatus for diagnosing a state of a plasma processing apparatus, prior distribution information including a probability distribution function is previously obtained for each of first sensors by using first sensor values obtained by the first sensors in a first plasma processing apparatus, a probability distribution in each of second sensors corresponding to each of the first sensors is estimated based on the previously obtained prior distribution information and second sensor values obtained by the second sensors in a second plasma processing apparatus different from the first plasma processing apparatus, and a state of the second plasma processing apparatus is diagnosed by using the estimated probability distribution. | 2022-05-19 |
20220157581 | APPARATUS FOR ION ENERGY ANALYSIS OF PLASMA PROCESSES - An apparatus for obtaining ion energy distribution, IED, measurements in a plasma processing system, in one example, comprising a substrate for placement in the plasma processing system and exposed to the plasma, an ion energy analyser disposed in the substrate for measuring the ion energy distribution at the substrate surface during plasma processing, the analyser comprising a first conductive grid, a second conductive grid, a third conductive grid, a fourth conductive grid and a collection electrode, each grid separated by an insulation layer, a battery power supply and control circuitry, integrated in the substrate, for supplying and controlling voltage to each of the grids and the collector of the ion energy analyser; and a high voltage generating circuit. | 2022-05-19 |
20220157582 | MAGNET BAR WITH ATTACHED SENSOR - A magnet bar structure for a sputter magnetron system comprises a magnet bar having attached to it a sensing device for sensing intrinsic and/or extrinsic properties of a tubular sputtering target when mounted over the magnet bar structure. | 2022-05-19 |
20220157583 | Niobium Sputtering Target - Provided is a niobium sputtering target having improved film thickness uniformity throughout the target life. | 2022-05-19 |
20220157584 | MASS SPECTROMETER AND METHOD OF MASS SPECTROMETRY - A method of mass spectrometry for analyzing a sample within a mass range of interest includes the steps: ionizing the sample to produce a plurality of precursor ions; performing an MS1 scan of the precursor ions comprising mass analyzing the precursor ions across the mass range of interest, to obtain an MS1 mass spectrum of the precursor ions; determining ion intensity values within the MS1 mass spectrum; selecting precursor mass segments within the mass range of interest, and for each precursor mass segment: fragmenting the precursor ions within that precursor mass segment; and performing an MS2 scan of the fragmented ions by: controlling an amount of fragmented ions for that precursor mass segment, based on an intensity value for that precursor mass segment derived from the MS1 spectrum; and mass analyzing the amount of fragmented ions. | 2022-05-19 |
20220157585 | UNBIASED ION IDENTIFICATION BY MULTIPLE IONS - Disclosed are embodiments directed to a multi-ion identification device, a system and method using the same to utilize chemical ionization in multiple adduct formation from the substances in the sampled gas of a gas sample being addressed to be analyzed in a mass analyzer. The multi-ion identification device includes a buffering region to have the sample flow turbulence decayed before the sample flow entrance to the ionization region)) utilizing chemical ionization by reagents from an ensemble of reagent ion towers. | 2022-05-19 |
20220157586 | ION ANALYZER - An ion analyzer includes a reaction chamber into which precursor ions derived from a sample component are introduced, a radical irradiation unit that generates and emits a predetermined type of radicals, a standard substance supply unit that individually supplies kinds of standard substances to the reaction chamber, where activation energy of radical addition reaction is known for each of the kinds of standard substances, and the activation energies are different in magnitude, an ion measurement unit that measures an amount of predetermined product ions generated from precursor ions derived from the standard substance by irradiation with the radicals, and a radical temperature calculation unit that obtains an amount of radicals that caused the radical addition reaction from the amount of the predetermined product ions and obtains a radical temperature based on a relationship between the amount of the radicals obtained for each kind of standard substance and activation energy. | 2022-05-19 |
20220157587 | SAMPLE SUPPORT, IONIZATION METHOD, AND MASS SPECTROMETRY METHOD - The sample support is used for ionization of a sample contained in a sample solution dropped using a pipette tip. The sample support includes a substrate formed with a plurality of through holes opened in a first surface and a second surface, and a frame that is formed with a through hole penetrating in a thickness direction of the substrate so as to overlap a measurement region when viewed from the thickness direction and that is bonded to the first surface of the substrate. The through hole of the frame includes a narrow portion having a width smaller than the outer diameter of a tip of the pipette tip. | 2022-05-19 |
20220157588 | SAMPLE SUPPORT, IONIZATION METHOD, AND MASS SPECTROMETRY METHOD - The sample support includes a substrate having a plurality of through holes opened in a first surface and a second surface, a frame surrounding a measurement region of the substrate and supporting the substrate when viewed in a thickness direction of the substrate, and a protective layer disposed to face the first surface and having a facing portion facing the measurement region. A through hole penetrating in the thickness direction is formed in the facing portion. The through hole of the facing portion includes a narrow portion having a width smaller than an outer diameter of a tip of a pipette tip for dropping a sample solution into the measurement region. | 2022-05-19 |
20220157589 | INLET INSTRUMENTATION FOR ION ANALYSER COUPLED TO RAPID EVAPORATIVE IONISATION MASS SPECTROMETRY ("REIMS") DEVICE - An apparatus is disclosed comprising a first device for generating aerosol, smoke or vapour from one or more regions of a target, an inlet conduit to an ion analyser or mass spectrometer, the inlet conduit having an inlet through which the aerosol, smoke or vapour passes, and a Venturi pump arrangement arranged and adapted to direct the aerosol, smoke or vapour towards the inlet. | 2022-05-19 |
20220157590 | MASS SPECTROMETRY APPARATUS - A mass spectrometry apparatus, including a mass spectrometer and a sample plate. The mass spectrometer includes: a sample plate holder configured to hold a sample plate in an engaged position. The mass spectrometer is configured to perform a mass spectrometric analysis of a sample only when the sample is located on a sample plate that is held in the engaged position by the sample plate holder. The mass spectrometer includes one or more engagement features configured to engage with a sample plate so as to prevent the sample plate from being held in the engaged position by the sample plate holder unless the sample plate includes one or more engagement features configured to limit use of the sample plate to a specific analytical technique or a range of analytical techniques to be performed using the mass spectrometer. The sample plate is configured for use in the specific analytical technique or range of analytical techniques, wherein the sample plate includes the one or more engagement features configured to limit use of the sample plate to the specific analytical technique or range of analytical techniques. | 2022-05-19 |
20220157591 | LASER COAXIAL ION EXCITATION DEVICE - A laser coaxial ion excitation device includes an optical center and an ion transmission channel. The optical center is hollow, the optical center is coaxial with the ion transmission channel, the ion transmission channel is perpendicular to the matrix carrier, laser focusing spots are focused in a non-uniform way, and a light path comprises, but not limited to, a laser transmission light path, a visually monitoring light path, a visual illumination light path and an optical intensity monitoring light path. | 2022-05-19 |
20220157592 | ELECTROSPRAY PROBE - An electrospray probe for use in an electrospray ion source is disclosed, which comprises a cannula extending from a proximal end having an inlet aperture for receiving a liquid sample containing at least one analyte to a discharge emitter end having an outlet aperture through which charged liquid droplets containing ions of said analyte are discharged, and an electrically conductive coating covering at least a portion of an external surface and at least a portion of an internal surface of said emitter end. | 2022-05-19 |
20220157593 | FEEDING REAL TIME SEARCH RESULTS OF CHIMERIC MS2 SPECTRA INTO THE DYNAMIC EXCLUSION LIST - A method includes obtaining a first mass spectrum; selecting a first peak of the first mass spectrum; isolating precursor ions in an isolation window including the first peak; fragmenting and analyzing the isolated ions to obtain a second mass spectrum; performing a real-time search of the second mass spectrum for both the target precursor and near isobaric precursors ions that are co-isolated with the target precursor in an isolation window; adding the precursor ions that produced an identification during the real-time search to the exclusion list; selecting a second peak present in the first mass spectrum and not on the exclusion list; and fragmenting and analyzing ions of the second peak to obtain a third mass spectrum. | 2022-05-19 |
20220157594 | QUADRUPOLE DEVICES - A method of operating a quadrupole device ( | 2022-05-19 |
20220157595 | CUT METAL GATE PROCESS FOR REDUCING TRANSISTOR SPACING - A semiconductor structure includes a substrate; an isolation structure over the substrate; a first fin extending from the substrate and through the isolation structure; a first source/drain structure over the first fin; a contact etch stop layer over the isolation structure and contacting a first side face of the first source/drain structure; and a first dielectric structure contacting a second side face of the first source/drain structure. The first side face and the second side face are on opposite sides of the first fin in a cross-sectional view cut along a widthwise direction of the first fin. The first dielectric structure extends higher than the first source/drain structure. | 2022-05-19 |
20220157596 | Varying Temperature Anneal for Film and Structures Formed Thereby - Semiconductor device structures having dielectric features and methods of forming dielectric features are described herein. In some examples, the dielectric features are formed by an ALD process followed by a varying temperature anneal process. The dielectric features can have high density, low carbon concentration, and lower k-value. The dielectric features formed according to the present disclosure has improved resistance against etching chemistry, plasma damage, and physical bombardment in subsequent processes while maintaining a lower k-value for target capacitance efficiency. | 2022-05-19 |
20220157597 | COMPOSITION FOR DRYING UNEVEN PATTERN AND METHOD FOR MANUFACTURING SUBSTRATE HAVING UNEVEN PATTERN ON SURFACE - The composition for drying an uneven pattern of the present invention includes a sublimable substance, and a solvent whose boiling point at 1 atm is lower than a boiling point or a sublimation point of the sublimable substance by 5° C. or more and whose boiling point at 1 atm is 75° C. or lower. | 2022-05-19 |
20220157598 | METHOD FOR FORMING FILM AND MANUFACTURING SEMICONDUCTOR DEVICE - A method for forming a semi-conductive or conductive oxide film is provided. The oxide film is doped with a bismuth and made of an indium oxide, an aluminum oxide, a gallium oxide, an oxide including the gallium oxide, or an oxide of a combination thereof. The method includes supplying a mist of a solution to a surface of the substrate while heating the substrate. An oxide film material and a bismuth compound being dissolved in the solution. The bismuth compound is selected from the group consisting of bismuth ethoxide, bismuth acetate oxide, bismuth acetate, bismuth nitrate pentahydrate, bismuth nitrate, bismuth oxynitrate, bismuth 2-ethylhexanoate, bismuth octanoate, bismuth naphthenate, bismuth subgallate, bismuth subsalicylate, bismuth chloride, bismuth oxychloride, bismuth citrate, bismuth oxyacetate, bismuth oxide perchlorate, bismuth oxysalicylate, bismuth bromide, bismuth iodide, bismuth hydroxide, bismuth oxycarbonate, bismuth sulfide, bismuth sulfate, bismuth carbonate, and bismuth oxide. | 2022-05-19 |
20220157599 | ADHERED SUBSTANCE REMOVING METHOD AND FILM-FORMING METHOD - Provided are a deposit removal method and a film deposition method capable of removing a selenium-containing deposit adhering to an inner surface of a chamber or an inner surface of piping connected to the chamber without disassembling the chamber. A selenium-containing deposit adhering to at least one of the inner surface of a chamber ( | 2022-05-19 |
20220157600 | FILM FORMING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, FILM FORMING DEVICE, AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method of forming a group V metal nitride film on a substrate includes: providing the substrate within a processing container; and forming the group V metal nitride film on the substrate by alternately supplying, into the processing container, a raw material gas including a group V metal and a reducing gas including a nitrogen-containing gas. | 2022-05-19 |
20220157601 | Precursors and Flowable CVD Methods for Making Low-K Films to Fill Surface Features - A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about −20° C. to about 100° C.; increasing pressure in the reactor to at least 10 torr; and introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties. | 2022-05-19 |
20220157602 | SILICON OXIDE GAP FILL USING CAPACITIVELY COUPLED PLASMAS - Exemplary deposition methods may include introducing a precursor into a processing region of a semiconductor processing chamber via a faceplate of the semiconductor processing chamber. The methods may include flowing an oxygen-containing precursor into the processing region from beneath a pedestal of the semiconductor processing chamber. The pedestal may support a substrate. The substrate may define a trench in a surface of the substrate. The methods may include forming a first plasma of the precursor in the processing region of the semiconductor processing chamber. The methods may include depositing a first oxide film within the trench. The methods may include forming a second plasma in the processing region. The methods may include etching the first oxide film, while flowing the oxygen-containing precursor. The methods may include re-forming the first plasma in the processing region. The methods may also include depositing a second oxide film over the etched oxide film. | 2022-05-19 |
20220157603 | SPIN COATING PROCESS AND APPARATUS WITH ULTRASONIC VISCOSITY CONTROL - A spin coating method includes dispensing a coating material including a nonvolatile film material and a volatile solvent over a substrate, and spin coating the coating material over the substrate by spinning the substrate while applying ultrasound waves to the coating material to reduce a viscosity of the coating material during the spin coating. | 2022-05-19 |
20220157604 | APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS WITH SELECTIVE EPITAXIAL DEPOSITION - Aspects of the present disclosure relate to apparatus, systems, and methods of using atomic hydrogen radicals with epitaxial deposition. In one aspect, nodular defects (e.g., nodules) are removed from epitaxial layers of substrate. In one implementation, a method of processing substrates includes selectively growing an epitaxial layer on one or more crystalline surfaces of a substrate. The epitaxial layer includes silicon. The method also includes etching the substrate to remove a plurality of nodules from one or more non-crystalline surfaces of the substrate. The etching includes exposing the substrate to atomic hydrogen radicals. The method also includes thermally annealing the epitaxial layer to an anneal temperature that is 600 degrees Celsius or higher. | 2022-05-19 |
20220157605 | FINE LINE PATTERNING METHODS - A method of manufacturing a semiconductor device including operations of forming a first hard mask over an underlying layer on a substrate by a photolithographic and etching method, forming a sidewall spacer pattern having a first sidewall portion and a second sidewall portion on opposing sides of the first hard mask, etching the first sidewall portion, etching the first hard mask and leaving the second sidewall portion bridging a gap of the etched first hard mask, and processing the underlying layer using the second hard mask. | 2022-05-19 |
20220157606 | SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME - A method for producing a semiconductor power device includes forming a gate trench from a surface of the semiconductor layer toward an inside thereof. A first insulation film is formed on the inner surface of the gate trench. The method also includes removing a part on a bottom surface of the gate trench in the first insulation film. A second insulation film having a dielectric constant higher than SiO2 is formed in such a way as to cover the bottom surface of the gate trench exposed by removing the first insulation film. | 2022-05-19 |
20220157607 | Method for Annealing a Gate Insulation Layer on a Wide Band Gap Semiconductor Substrate - A method for forming a wide band gap semiconductor device is provided. The method includes forming a gate insulation layer on a wide band gap semiconductor substrate and annealing the gate insulation layer using at least a first reactive gas species and a second reactive gas species, wherein the first reactive gas species differs from the second reactive gas species. The method can include forming a gate electrode on the gate insulation layer after annealing the gate insulation layer. | 2022-05-19 |
20220157608 | METHOD OF MANUFACTURING A DOPED AREA OF A MICROELECTRONIC DEVICE - A method for forming a doped zone of a transistor includes providing a stack having at least one active layer made from a semiconductor material, and a transistor gate pattern having at least one lateral side, and modifying a portion of the active layer so as to form a modified portion made of a modified semiconductor material. The modified portion extends down to the at least one lateral side of the gate pattern, at the edge of a non-modified portion above which the gate pattern is located. The method also includes forming a spacer on the lateral side, removing the modified portion by selective etching of the modified semiconductor material with respect to the semiconductor material of the non-modified portion, so as to expose an edge of the non-modified portion, and forming the doped zone by epitaxy starting from the exposed edge. | 2022-05-19 |
20220157609 | PRECISE ETCHING APPARATUS FOR PREPARING RECESSED-GATE ENHANCEMENT DEVICE AND ETCHING METHOD FOR THE SAME - The present invention discloses a precise etching apparatus for preparing a recessed-gate enhancement device and an etching method for the same. The apparatus provided by the present invention includes an inductively-coupled plasma etching chamber, a current detection device, an inductive coil, a radio frequency source, a mechanical pump, and a molecular pump. The current detection device is connected with the inductively-coupled plasma etching chamber. The inductive coil is connected with the inductively-coupled plasma etching chamber. The radio frequency source is connected with the inductive coil. The mechanical pump and the molecular pump are connected with the inductively-coupled plasma etching chamber. When a displayed current value is zero during an HEMT device preparation process, the apparatus shuts off a two-dimensional electron gas channel, and etching is terminated, thereby preventing gate leakage caused by over-etching or damage to the two-dimensional electron gas channel, thus achieving precise etching. | 2022-05-19 |
20220157610 | ETCHING METHOD - An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component. | 2022-05-19 |
20220157611 | Method for Multi-Level Etch, Semiconductor Sensing Device, and Method for Manufacturing Semiconductor Sensing Device - The present disclosure provides a semiconductor sensing device. The semiconductor sensing device includes a substrate having a sensing region. The sensing region includes an active feature. The active feature includes an anchor portion, an elevated portion, and a nanowire portion. The anchor portion is on a top surface of the substrate. The elevated portion is spaced from the top surface of the substrate by a vertical distance and connected to the anchor portion. The nanowire portion is on the top surface of the substrate and connected to the anchor portion. The vertical distance is greater than or equal to a thickness of the nanowire portion. | 2022-05-19 |
20220157612 | SEMICONDUCTOR SUBSTRATE POLISHING METHOD - A method of polishing a semiconductor substrate, including: a) a step of multiple implantations of ions from an upper surface of the substrate, to modify the material of an upper portion of the substrate, the multiple implantation step comprising a plurality of successive implantations under different respective implantation orientations; and b) a step of selective removal of the upper portion of the substrate. | 2022-05-19 |
20220157613 | Etching Solution And Method For Selectively Removing Silicon Nitride During Manufacture Of A Semiconductor Device - Described herein is an etching solution and the method of using the etching solution comprising water, phosphoric acid solution (aqueous), an organosilicon compound as disclosed herein, and a hydroxyl group-containing water-miscible solvent. Such compositions are useful for the selective removal of silicon nitride over silicon oxide | 2022-05-19 |
20220157614 | Dry Etching Method and Method for Producing Semiconductor Device - The present disclosure is directed to a dry etching method for a substrate having a silicon compound film, including: plasmatizing a dry etching agent; and etching the silicon compound film with the plasmatized dry etching agent through a mask formed with a predetermined opening pattern on the silicon compound film, wherein the dry etching agent contains the following first to fourth gases; the first gas is at least one compound selected from the group consisting of iodinated fluorocarbon compounds and brominated fluorocarbon compounds; the second gas is an unsaturated fluorocarbon represented by C | 2022-05-19 |
20220157615 | HIGH-THROUGHPUT DRY ETCHING OF FILMS CONTAINING SILICON-OXYGEN COMPONENTS OR SILICON-NITROGEN COMPONENTS BY PROTON-MEDIATED CATALYST FORMATION - A method of high-throughput dry etching of a film by proton-mediated catalyst formation. The method includes providing a substrate having a film thereon containing silicon-oxygen components, silicon-nitrogen components, or both, introducing an etching gas in the process chamber, plasma-exciting the etching gas, and exposing the film to the plasma-excited etching gas to etch the film. In one example, the etching gas contains at least three different gases that include a fluorine-containing gas, a hydrogen-containing gas, and a nitrogen-containing gas, plasma-exciting the etching gas. In another example, the etching gas contains at least four different gases that include a fluorine-containing gas, a hydrogen-containing gas, an oxygen-containing gas, and a silicon-containing gas. | 2022-05-19 |
20220157616 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM - A substrate processing method includes: (a) carrying a substrate having a first film with a recess, and a mask into a first chamber; (b) adjusting the substrate temperature to 200° C. or higher; (c-1) supplying silicon-containing reactive species into the first chamber, thereby adsorbing the species onto the side wall of the recess; and (c-2) supplying nitrogen-containing reactive species into the first chamber, thereby forming a second film on the side wall of the recess; (d) carrying the substrate into a second chamber; and (e) adjusting the substrate temperature to 100° C. or lower; and (f) etching the bottom of the recess. Further, (a) to (f) are repeated in this order until an aspect ratio of a depth dimension from the opening of the mask to the bottom of the recess becomes 50 or more. | 2022-05-19 |
20220157617 | REDUCING ROUGHNESS OF EXTREME ULTRAVIOLET LITHOGRAPHY RESISTS - Provided herein are methods and systems for reducing roughness of EUV resists and improving etched features. The methods may involve depositing a thin film on a patterned EUV resist having a stress level that is less compressive than a stress level of the patterned EUV resist. The resulting composite stress may reduce buckling and/or bulging of the patterned EUV resist. | 2022-05-19 |
20220157618 | SLURRY RECYCLING FOR CHEMICAL MECHANICAL POLISHING SYSTEM - The present disclosure describes an apparatus and a method for a chemical mechanical polishing (CMP) process that recycles used slurry as another slurry supply. The apparatus includes a pad on a rotation platen, a first feeder and a second feeder where each of the first and the second feeder is fluidly connected to a respective flow regulator and configured to dispense a first and a second slurry on the pad, a flotation module configured to provide a recycled slurry, and a detection module configured to detect a polishing characteristic associated with polishing the substrate. The flotation module further includes an inlet configured to provide a fluid sprayed from the pad and a tank configured to store chemicals that include a frother and a collector configured to chemically bond with the fluid. | 2022-05-19 |
20220157619 | TEXTILE PATTERNING FOR SUBTRACTIVELY-PATTERNED SELF-ALIGNED INTERCONNECTS, PLUGS, AND VIAS - Embodiments of the invention include methods of forming a textile patterned hardmask. In an embodiment, a first hardmask and a second hardmask are formed over a top surface of an interconnect layer in an alternating pattern. A sacrificial cross-grating may then be formed over the first and second hardmasks. In an embodiment, portions of the first hardmask that are not covered by the sacrificial cross-grating are removed to form first openings and a third hardmask is disposed into the first openings. Embodiments may then include etching through portions of the second hardmask that are not covered by the sacrificial cross-grating to form second openings. The second openings may be filled with a fourth hardmask. According to an embodiment, the first, second, third, and fourth hardmasks are etch selective to each other. In an embodiment the sacrificial cross-grating may then be removed. | 2022-05-19 |
20220157620 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME - A semiconductor structure includes: a base; a conductive column, which is at least located in the base; an electric connection layer, which is connected to an end part of the conductive column. The end part, towards the electric connection layer, of the conductive column has a first protruding part and at least one groove defined by the first protruding part, the electric connection layer has a second protruding part at a position corresponding to the groove, and the second protruding part is embedded in the groove. | 2022-05-19 |
20220157621 | COMPONENT FOR A STRETCHABLE ELECTRONIC DEVICE - A method of manufacturing a component for a stretchable electronic device comprises providing a silicon wafer comprising a first surface and a second surface; applying a layer of a conductive metal onto at least a portion of the first surface of the silicon wafer; providing a stretchable silicone substrate having a first surface and a second surface; and plasma bonding at least a portion of the second surface of the silicon wafer to at least a portion of the first surface of the stretchable silicone substrate. | 2022-05-19 |
20220157622 | CHIP PACKAGING METHOD AND CHIP PACKAGE UNIT - A chip packaging method includes: providing plural chip units; providing a base material, and placing the chip units on the base material; providing an adhesive layer to adhere a metal foil to the chip unit, wherein the metal foil is a part of the base material or additional to the base material; and cutting the chip units on the base material to form plural separated chip package units, wherein each of the chip package units includes a cut metal foil part. | 2022-05-19 |
20220157623 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes obtaining a shear stress F | 2022-05-19 |
20220157624 | STACKED SEMICONDUCTOR DIE ASSEMBLIES WITH HIGH EFFICIENCY THERMAL PATHS AND MOLDED UNDERFILL - Semiconductor die assemblies having high efficiency thermal paths and molded underfill material. In one embodiment, a semiconductor die assembly comprises a first die and a plurality of second dies. The first die has a first functionality, a lateral region, and a stacking site. The second dies have a different functionality than the first die, and the second dies are in a die stack including a bottom second die mounted to the stacking site of the first die and a top second die defining a top surface of the die stack. A thermal transfer structure is attached to at least the lateral region of the first die and has a cavity in which the second dies are positioned. An underfill material is in the cavity between the second dies and the thermal transfer structure, and the underfill material covers the top surface of the die stack. | 2022-05-19 |
20220157625 | INTEGRATED FAN-OUT PACKAGE AND MANUFACTURING METHOD THEREOF - An integrated fan-out package includes a first redistribution structure, a die, an insulation encapsulation, and at least one first through interlayer via. The first redistribution structure includes a dielectric layer, a feed line at least partially disposed on the dielectric layer and a signal enhancement layer covering the feed line, wherein the signal enhancement layer has a lower dissipation factor (DO and/or a lower permittivity (Dk) than the dielectric layer. The die is disposed on the first redistribution structure. The insulation encapsulation encapsulates the die. The at least one first TIV is embedded in the insulation encapsulation and the signal enhancement layer. | 2022-05-19 |
20220157626 | AFFIXING DEVICE - Described is an affixing apparatus capable of flattening a surface of a film affixed to a main surface of a plate-shaped body. An affixing apparatus for affixing the film to the plate-shaped body includes: a plate-shaped mounting member provided with a mounting portion on which the plate-shaped body is mounted; a plate-shaped pressing member installed at a position facing the mounting member; and a support member installed at an outer edge of the mounting portion so as to be positioned between the mounting member and the pressing member. | 2022-05-19 |
20220157627 | METHOD FOR PROCESSING SEMICONDUCTOR WAFERS - The present disclosure describes methods and systems for processing semiconductor wafers. A method for processing a wafer includes measuring one or more wafer characteristics of the wafer using a plurality of detectors. The wafer includes a device region and a perimeter region. The method also includes determining a wafer modification profile of the wafer based on the measured one or more wafer characteristics. The method further includes modifying a ring-shaped portion of the wafer within the perimeter region using the wafer modification profile. The modified ring-shaped portion has a penetration depth that is less than a thickness of the wafer. The method further includes performing a wafer thinning process on the wafer. | 2022-05-19 |
20220157628 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE SUPPPORT AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A substrate processing apparatus includes a process chamber in which one or more substrates are processed; and a substrate support configured to support the one or more substrates in the process chamber. The substrate support includes one or more plate-shaped structures arranged in the substrate support in a manner corresponding to the one or more substrates, and a thickness of a central portion of a plate-shaped structure among the one or more plate-shaped structures is different from a thickness of an outer peripheral portion of the plate-shaped structure located outer of the central portion. | 2022-05-19 |
20220157629 | DEPOSITION APPARATUS, METHOD OF DEPOSITION ON A SUBSTRATE, SUBSTRATE STRUCTURE AND SUBSTRATE SUPPORT - A deposition apparatus includes a first substrate support for supporting a substrate in a substantially vertical orientation. The substrate has a first main surface, a second main surface opposite the first main surface and a side surface between the first main surface and the second main surface. The deposition apparatus includes a first deposition device for depositing a first conductive pattern or a first resist mask on the side surface of the substrate while the substrate is supported in the substantially vertical orientation by the first substrate support. | 2022-05-19 |
20220157630 | CEILING TRANSPORT VEHICLE - An overhead transport vehicle includes an elevator including a base and a first support supporting the base to be vertically movable from below in a vertical direction through a vibration isolator. The vibration isolator includes a first biasing portion in contact with both of the support and the base to urge a first body and the base in a direction away from each other, and a second biasing portion at one of the first body and the base to come into contact with both of the first body and the base and urge the first body and the base in a direction away from each other when a load equal to or greater than a predetermined value is applied to the first biasing portion. | 2022-05-19 |
20220157631 | TRANSFER DEVICE AND CEILING CARRIER - A transfer device includes a controller configured or programmed to perform at least one of a first control to make a maximum acceleration when moving a FOUP to a front end side smaller than a maximum acceleration when moving to a back end side, a second control to make a maximum deceleration when moving the FOUP to the front end side greater than a maximum deceleration when moving to the back end side, a third control to make the absolute value of the maximum deceleration when moving the FOUP to the front end side greater than the absolute value of the maximum acceleration, and a fourth control to make the absolute value of the maximum acceleration when moving the FOUP to the back end side greater than the absolute value of the maximum deceleration. | 2022-05-19 |
20220157632 | AIRLOCK AND WAFER MACHINE - The airlock is provided with supporting legs configured to carry a wafer. The airlock further includes a wafer position correction system. The wafer position correction system includes sensing units, adjustment units and a control system. Each sensing unit is arranged on a respective one of the supporting legs and configured to sense a pressure signal applied on said sensing unit by the wafer. The sensing units are arranged at an edge of a calibration region. The adjustment units are arranged in the airlock around a periphery of the calibration region and configured to adjustably push the wafer. The control system is electrically connected to each of the sensing units and each of the adjustment units, and configured to select and control some of the adjustment units to adjust a position of the wafer according to the pressure signal. | 2022-05-19 |
20220157633 | WAFER BONDING APPARATUS - A wafer bonding apparatus may include a first chuck, a second chuck, and a pressure device. The first chuck may include a hole formed through a central portion of the first chuck. The second chuck may have a hole formed through a central portion of the second chuck. The pressure device may be configured to pressurize a wafer toward the second chuck through the holes. An air bearing may be interposed between the pressure device and the first chuck to suppress a dislocation of the pressure device. | 2022-05-19 |
20220157634 | FILM FOR COMPONENT MANUFACTURE AND COMPONENT MANUFACTURING METHOD - Provided are a film for manufacturing semiconductor component, a film for electronic component manufacture, a method for manufacturing a semiconductor component using such a film for manufacturing semiconductor component, and a method for manufacturing an electronic component using such a film for electronic component manufacture. The film for component manufacture includes a base layer and an adhesive layer provided on one surface side of the base layer, and the Ra (μm) of the surface of one side of the base layer on which the adhesive layer is not provided is 0.1 to 2.0, and the Rz (μm) is 1.0 to 15. The method using the film for component manufacture includes a segmenting step, a pickup step, and an evaluation step prior to the pickup step. | 2022-05-19 |
20220157635 | THIN SUBSTRATE HANDLING VIA EDGE CLAMPING - Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a cover ring for use in a process chamber includes: an annular body that includes an upper surface and a lower surface, an inner lip extending radially inward and downward from the annular body, and a plurality of protrusions extending downward from the inner lip and disposed at regular intervals along the inner lip, wherein lowermost surfaces of the plurality of protrusions together define a planar substrate contact surface. | 2022-05-19 |
20220157636 | SUBSTRATE FIXING DEVICE, ELECTROSTATIC CHUCK AND ELECTROSTATIC CHUCK MANUFACTURING METHOD - A substrate fixing device includes: a base plate; and an electrostatic chuck that is fixed to the base plate to adsorb a substrate by electrostatic force. The electrostatic chuck includes: an adsorption layer that is formed of ceramic and that contacts the substrate to adsorb and hold the substrate; a first heating layer that is formed on the adsorption layer and that includes a first electrode; a second heating layer that is formed on the first heating layer and that includes a second electrode; and a via that is provided between the first electrode and the second electrode to electrically connect the first electrode and the second electrode to each other. The via includes a body portion, and an end portion that is connected to the body portion. A diameter of the end portion is larger than that of the body portion. | 2022-05-19 |
20220157637 | DICING DIE BONDING FILM - A dicing die bonding film according to the present invention includes: a dicing tape including a base layer and an adhesive layer laminated on the base layer; and a die bonding layer laminated on the adhesive layer of the deicing tape; the die bonding layer including a matrix resin, a thiol-group-containing compound, and conductive particles. | 2022-05-19 |
20220157638 | CHUCK TABLE AND LASER PROCESSING APPARATUS - There is provided a chuck table for holding a workpiece under suction. The chuck table includes a base table having a suction path to be connected to a suction source, a support member that is mounted on the base table and supports the workpiece, and a protective plate disposed so as to cover an upper surface of the support member and to protect the support member. The protective plate has a plurality of through-holes that transmits a suction force from the suction source to the workpiece. | 2022-05-19 |
20220157639 | CHIP TRANSFER DEVICE CAPABLE OF FLOATINGLY POSITIONING A CHIP AND METHOD FOR FLOATINGLY POSITIONING A CHIP - The present invention relates to a chip transfer device capable of floatingly positioning a chip and a method for floatingly positioning a chip. When a chip is placed in a chip socket, a control unit controls an air pressure switching valve to allow at least one vent hole to be communicated with a positive air pressure source. An air flow from the positive air pressure source blows a lower surface of the chip through the vent hole, so that the at least one chip is air-floated. Accordingly, when the chip socket is communicated with the positive air pressure source, the air flow blows the lower surface of the chip in the chip socket through the vent hole, so that the chip is air-floated in the chip socket to reduce the error displacement of the chip offset. | 2022-05-19 |
20220157640 | SEMICONDUCTOR WAFER TRANSFER ARM - A semiconductor wafer transfer arm includes, in one embodiment, a mechanical arm and a contact pad including contact points. The contact points are configured to secure a semiconductor wafer at a non-active area of the semiconductor wafer and offset the contact pad from an active area of the semiconductor wafer by a predetermined distance. The transfer arm prevents foreign material from contacting the wafer and thus reduces instances of die cracking caused by foreign material during a semiconductor wafer transfer process. | 2022-05-19 |
20220157641 | SUBSTRATE HOLDING MECHANISM, SUBSTRATE MOUNTING METHOD, AND SUBSTRATE DETACHING METHOD - A substrate holding mechanism includes: a mounting stage on which a substrate is mounted; a plurality of holding sections each of which includes an upper surface that holds a lower surface of a peripheral section of the substrate and includes a lower surface that pushes down an upper surface of the peripheral section of the substrate mounted on the mounting stage; a protrusion that is provided on the plurality of holding sections and that contacts an end surface of the substrate mounted on the mounting stage to correct a position of the substrate; a lifting and lowering mechanism configured to lift and lower the plurality of holding sections; and a horizontal moving mechanism configured to horizontally move the plurality of holding sections. | 2022-05-19 |
20220157642 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a chamber and units disposed above or on the chamber, at least one unit including a first groove. The substrate processing apparatus includes a lifting mechanism including at least one second groove, the lifting mechanism being configured to raise and lower each of the units. The units are configured to be raised and lowered in a state of being secured to the lifting mechanism, upon occurrence of a condition in which a fixing member is inserted into the first groove of the at least one unit and the second groove of the lifting mechanism. | 2022-05-19 |