19th week of 2016 patent applcation highlights part 56 |
Patent application number | Title | Published |
20160133772 | CONCENTRATING OPTICAL WAVEGUIDE AND CONTAINMENT CHAMBER SYSTEM - In embodiments of the present invention improved capabilities are described for a concentrating optical waveguide and containment facility comprising wide acceptance angle, high ratio, solar concentrators where the facility operates independent of the need for solar tracking. The invention utilizes unique non-focusing waveguide optics and containment chambers to concentrate and contain incident light such that the effective concentration is the ratio of incident surface area to the power producing element within or at the exit of the containment chamber. | 2016-05-12 |
20160133773 | MONOLITHIC MULTIPLE SOLAR CELLS - A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror. | 2016-05-12 |
20160133774 | SOLAR CELL WITH DIELECTRIC BACK REFLECTIVE COATING - In a method for producing a solar cell, a layer stack of dielectric layers is applied to a back of a solar cell substrate and the layer stack is heated and is held at temperatures of at least 700° C. during a time period of at least 5 minutes. The novel solar cell has a layer stack of dielectric layers on its back. At least one of the dielectric layers of the layer stack is densified so that its resistivity to firing-through of pastes with glass components is enhanced. | 2016-05-12 |
20160133775 | SOLAR CELL STACK - A solar cell stack, having a first semiconductor solar cell having a p-n junction made of a first material with a first lattice constant, and a second semiconductor solar cell having a p-n junction made of a second material with a second lattice constant, and the first lattice constant being at least 0.008 Å smaller than the second lattice constant, and a metamorphic buffer, the metamorphic buffer being formed between the first semiconductor solar cell and the second semiconductor solar cell, and the metamorphic buffer including a series of three layers, and the lattice constant increasing in a series in the direction of the semiconductor solar cell, and the lattice constants of the layers of the metamorphic buffer being bigger than the first lattice constant, two layers of the buffer having a doping, and the difference in the dopant concentration between the two layers being greater than 4E17 cm | 2016-05-12 |
20160133776 | RADIATION DETECTOR MANUFACTURED BY DICING A SEMICONDUCTOR WAFER AND DICING METHOD THEREFOR - An embodiment relates to a group II-VI semiconductor radiation detector, and an embodiment relates to a method for producing same. An embodiment of the present invention provides a radiation detector enabling reduction or restriction of the edge effect (or the end surface effect) and a method for producing same. An embodiment of the present invention provides a radiation detector obtained by half-cutting or full-cutting a group II-VI semiconductor wafer having a zinc blende structure in which the wafer has a {001} plane main surface, and cut planes according to the half-cutting or full-cutting have an angle θ (≠°) relative to the slip direction of the wafer. | 2016-05-12 |
20160133777 | Optically Assist-Triggered Wide Bandgap Thyristors Having Positive Temperature Coefficients - A thyristor includes a first conductivity type semiconductor layer, a first conductivity type carrier injection layer on the semiconductor layer, a second conductivity type drill layer on the carrier injection layer, a first conductivity type base layer on the drift layer, and a second conductivity type anode region on the base layer. The thickness and doping concentration of the carrier injection layer are selected to reduce minority carrier injection by the carrier injection layer in response to an increase in operating temperature of the thyristor. A cross-over current density at which the thyristor shifts from a negative temperature coefficient of forward voltage to a positive temperature coefficient of forward voltage is thereby reduced. | 2016-05-12 |
20160133778 | DYNAMIC SUPPORT SYSTEM FOR QUARTZ PROCESS CHAMBER - One embodiment of the present invention provides a support system for providing dynamic support to a deposition reactor. The system includes a coupling mechanism configured to provide coupling between the deposition reactor and the support system, an attachment mechanism configured to attach the support system to an external frame, and at least one gas bellows situated between the coupling mechanism and the attachment mechanism. | 2016-05-12 |
20160133779 | METHOD FOR MANUFACTURING CRYSTALLINE SILICON-BASED SOLAR CELL AND METHOD FOR MANUFACTURING CRYSTALLINE SILICON-BASED SOLAR CELL MODULE - A method for manufacturing a crystalline silicon-based solar cell having a photoelectric conversion section includes a silicon-based layer of an opposite conductivity-type on a first principal surface side of a crystalline silicon substrate of a first conductivity-type, and a collecting electrode formed by an electroplating method on a first principal surface of the photoelectric conversion section. By applying laser light from a first or second principal surface side of the photoelectric conversion section, an insulation-processed region his formed where a short-circuit between the first principal surface and a second principal surface of the photoelectric conversion section is eliminated. On the collecting electrode and/or the insulation-processed region, a protecting layer s formed for preventing diffusion of a metal, which is contained in the collecting electrode into the substrate. After the protecting layer is formed, the insulation-processed region is heated to eliminate leakage between the substrate and the silicon-based layer. | 2016-05-12 |
20160133780 | COMPOSITION FOR MANUFACTURING ELECTRODE OF SOLAR CELL, METHOD OF MANUFACTURING SAME ELECTRODE, AND SOLAR CELL USING ELECTRODE OBTAINED BY SAME METHOD - A composition for manufacturing an electrode of a solar cell, comprising metal nanoparticles dispersed in a dispersive medium, wherein the metal nanoparticles contain silver nanoparticles of 75 weight % or more, the metal nanoparticles are chemically modified by a protective agent having a main chain of organic molecule comprising a carbon backbone of carbon number of 1 to 3, and the metal nanoparticles contains 70% or more in number-average of metal nanoparticles having a primary grain size within a range of 10 to 50 nm. | 2016-05-12 |
20160133781 | REUSABLE SUBSTRATE CARRIER - In some embodiments, a substrate carrier for holding a plurality of substrates comprises a disk formed of a continuous material to a nominal dimension which is approximately a multiple of a nominal dimension of a standard substrate size used in the manufacture of light emitting diode devices. In an embodiment, the disk is formed symmetrically about a central axis and defines a substantially planar upper surface. A first pair of pockets is defined in the upper surface of the disk, wherein the disk and each of the first pair of pockets are bisected by a first reference plane passing through the central axis. A second pair of pockets is defined in the upper surface of the disk, wherein the disk and each of the second pair of pockets are bisected by a second reference plane passing through the central axis. | 2016-05-12 |
20160133782 | SUBSTRATE CARRIER SYSTEM UTILIZING ELECTROSTATIC CHUCKING TO ACCOMMODATE SUBSTRATE SIZE HETEROGENEITY - Embodiments of improved substrate carriers are provided herein. In some embodiments, a substrate carrier, includes: a multi-layered disk having upper and lower layers formed of a continuous material and an electrostatic electrode structure disposed therebetween, wherein the multi-layered disk is dimensioned and arranged so as to have a nominal dimension which exceeds a nominal dimension of a standard substrate size used in the manufacture of light emitting diode devices, and wherein the multi-layered disk is formed symmetrically about a central axis and defines a substantially planar upper surface. | 2016-05-12 |
20160133783 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR - To provide a Group III nitride semiconductor light-emitting device production method, which is intended to grow a flat light-emitting layer without reducing the In concentration of the light-emitting layer. The method of the techniques includes an n-side superlattice layer formation step, in which an InGaN layer, a GaN layer disposed on the InGaN layer, and an n-type GaN layer disposed on the GaN layer are repeatedly formed. In formation of the InGaN layer, nitrogen gas is supplied as a carrier gas. In formation of the n-type GaN layer, a first mixed gas formed of nitrogen gas and hydrogen gas is supplied as a carrier gas. The first mixed gas has a hydrogen gas ratio by volume greater than 0% to 75% or less. | 2016-05-12 |
20160133784 | METHOD OF MANUFACTURING SEMICONDUCTOR CHIPS - A method of manufacturing semiconductor chips includes: forming grooves on a front face side of a substrate; and forming grooves on a back face side of the substrate as defined herein, and in manufacturing conditions in which a variation range of a top section of the cutting member having a tapered tip end shape with no top face in the groove width direction changes from a range included in the groove on the front face side to a range away from the groove on the front face side as wear of the cutting member advances, the use of the cutting member is stopped before the variation range changes from the range included in the groove on the front face side to the range away from the groove on the front face side. | 2016-05-12 |
20160133785 | DEEP ULTRAVIOLET LED AND METHOD FOR MANUFACTURING THE SAME - A deep ultraviolet LED with a design wavelength of λ is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of λ; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap. | 2016-05-12 |
20160133786 | Non-Crystalline Materials Having Complete Photonic, Electronic or Phononic Bandgaps - The invention provides an article of manufacture, and methods of designing and making the article. The article permits or prohibits waves of energy, especially photonic/electromagnetic energy, to propagate through it, depending on the energy band gaps built into it. The structure of the article may be reduced to a pattern of points having a hyperuniform distribution. The point-pattern may exhibit a crystalline symmetry, a quasicrystalline symmetry or may be aperiodic. In some embodiments, the point pattern exhibits no long-range order. Preferably, the point-pattern is isotropic. In all embodiments, the article has a complete, TE- and TM-optimized band-gap. The extraordinary transmission phenomena found in the disordered hyperuniform photonic structures of the invention find use in optical micro-circuitry (all-optical, electronic or thermal switching of the transmission), near-field optical probing, thermophotovoltaics, and energy-efficient incandescent sources. | 2016-05-12 |
20160133787 | Diode-Based Devices and Methods for Making the Same - In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least 1, a bottom diode material including a lower region disposed at least partly in the opening and an upper region extending above the opening, the bottom diode material comprising a semiconductor material that is lattice mismatched to the substrate, a top diode material proximate the upper region of the bottom diode material, and an active diode region between the top and bottom diode materials, the active diode region including a surface extending away from the top surface of the substrate. | 2016-05-12 |
20160133788 | SEMICONDUCTOR LIGHT-EMITTING DEVICES AND SEMICONDUCTOR LIGHT-EMITTING DEVICE PACKAGES - Semiconductor light-emitting devices, and semiconductor light-emitting packages, include at least one light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on a substrate, the at least one light-emitting structure having a first region and a second region delimiting the first region. The light-emitting device includes a groove in the second region, and the groove is adjacent to an edge of the substrate and extends parallel to the edge of the substrate. | 2016-05-12 |
20160133789 | LIGHT-EMITTING DEVICE HAVING A PATTERNED SURFACE - A light-emitting device comprises a substrate having a top surface and a plurality of patterned units protruding from the top surface; and a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface; wherein one of the plurality of patterned units has a vertex, a first inclined surface, and a second inclined surface, and the first inclined surface and the second inclined surface commonly join at the vertex from a cross-sectional view of the light-emitting device. | 2016-05-12 |
20160133790 | Textured phosphor conversion layer light emitting diode - This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element. | 2016-05-12 |
20160133791 | LIGHT EMITTING DIODE WITH NANOSTRUCTURED LAYER AND METHODS OF MAKING AND USING - A light emitting diode has a plurality of layers including at least two semiconductor layers. A first layer of the plurality of layers has a nanostructured surface which includes a quasi-periodic, anisotropic array of elongated ridge elements having a wave-ordered structure pattern, each ridge element having a wavelike cross-section and oriented substantially in a first direction. | 2016-05-12 |
20160133792 | SEMICONDUCTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME - A semiconductor substrate includes a substrate including a plurality of semispherical protrusions disposed at an interval on a first plane of the substrate, and a first semiconductor layer disposed on the first plane of the substrate. | 2016-05-12 |
20160133793 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting element includes a conductive substrate, a bonding portion, an intermediate metal film, a first electrode, a semiconductor stacked body and a second electrode. The bonding portion is provided on the support substrate and including a first metal film. The intermediate metal film is provided on the bonding portion and having a larger linear expansion coefficient than the first metal film. The first electrode is provided on the intermediate metal film and includes a second metal film having a larger linear expansion coefficient than the intermediate metal film. The semiconductor stacked body is provided on the first electrode and including a light emitting portion. The second electrode is provided on the semiconductor stacked body. | 2016-05-12 |
20160133794 | OPTOELECTRONIC SEMICONDUCTOR CHIP - An optoelectronic semiconductor chip includes a multiplicity of active regions arranged at a distance from one another, and a continuous current spreading layer, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the current spreading layer covers all cover layers of the active region. | 2016-05-12 |
20160133795 | METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE - Provided is a method of manufacturing a light-emitting device, the method including: a step of providing a conductive material on both surfaces of a base material in which a plurality of light-emitting elements each including a first electrode and a second electrode facing each other are formed, and cutting out the light-emitting elements together with the conductive material from the base material, to thereby obtain the light-emitting elements in each of which the first electrode and the second electrode are provided with conductive members having substantially the same sizes as those of the first electrode and the second electrode; a step of mixing the light-emitting elements with a binder having an insulating property to obtain a coating liquid, and applying the coating liquid onto a first substrate having a conductive layer formed thereon, to thereby form a coating layer; a step of laminating a second substrate having a conductive layer formed thereon on the first substrate so that the coating layer is interposed between the first and second substrates; and a step of applying pressure in a lamination direction in which the first substrate and the second substrate are laminated on each other, and holding the substrates at a preset temperature for a preset period of time in a state where the pressure is applied. | 2016-05-12 |
20160133796 | LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light-emitting device comprises a light-emitting structure capable of emitting a light; an electrode formed on a side of the light-emitting structure; a transparent structure formed on a second side of the light-emitting structure, wherein the transparent structure is aligned to a region of the electrode, and comprises a first transparent layer and a second transparent layer around the first transparent layer; a contact structure formed on the second side of the light-emitting structure; and a reflective layer covering the transparent structure and the contact structure. | 2016-05-12 |
20160133797 | SMD Type LED Package Device, Method for Manufacturing the Same, and Light-Emitting Apparatus - Disclosed is a SMD type LED package device, a method for manufacturing the same, and a light-emitting apparatus, wherein the surface-mount-device (SMD) type light-emitting diode (LED) package device comprises an assembly of an LED chip, two metal supporting frames, and a packaging body. The two metal supporting frames of the assembly are spaced apart from each other and disposed in parallel along the first axis. Each metal supporting frame has a first end electrically connected to the LED chip and a second end opposite to the first end. The packaging body has a lens portion and a supporting portion, which is integrally formed with the packaging body and covers the LED chip and the first ends of the metal supporting frames. | 2016-05-12 |
20160133798 | OPTOELECTRONIC COMPONENT INCLUDING A CONVERSION ELEMENT AND METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT INCLUDING A CONVERSION ELEMENT - An optoelectronic component includes a layer sequence having an active layer that emits electromagnetic primary radiation during operation, at least one conversion element arranged in a beam path of the primary radiation, wherein the at least one conversion element includes converter particles and a binder material, the converter particles are distributed in the binder material, the converter particles at least partly convert the primary radiation into electromagnetic secondary radiation, and the binder material is produced from a salt of two Formulae or from a mixture of different salts of one of the two Formulae, or from a mixture of different salts of the two Formulae. | 2016-05-12 |
20160133799 | FLUORIDE PHOSPHOR AND LIGHT EMITTING DEVICE, AND METHODS OF MANUFACTURING THE SAME - A fluoride phosphor may include: a fluoride represented by a composition formula: A | 2016-05-12 |
20160133800 | LIGHT EMITTING APPARATUS AND PRODUCTION METHOD THEREOF - A light emitting apparatus includes an electrically insulating base member; a first electrically conductive pattern portion and a second electrically conductive pattern portion formed on an upper surface of the base member; a plurality of intermediate electrically conductive pattern portions arranged between the first and second electrically conductive pattern portions; at least one light emitting device mounted on at least one of the intermediate electrically conductive pattern portions; a protection element mounted on the first and second electrically conductive pattern portions; and a resin portion disposed around the at least one light emitting device such that (i) the first and second electrically conductive pattern portions are partially covered by the resin portion and partially exposed from the resin portion, and (ii) the protection element is covered by the resin portion. | 2016-05-12 |
20160133801 | LED MIXING CHAMBER WITH REFLECTIVE WALLS FORMED IN SLOTS - A relatively large substrate has a reflective surface, such as a diffusive white surface. LED dies, either as bare LED dies or packaged LED dies, are mounted to the substrate to form separate arrays of LEDs. Each array is intended for a separate mixing chamber. A layer of an encapsulant, such as silicone, is deposited over the substrate to encapsulate the LED dies. A laser etches through the encapsulant to form slots, and a reflective material, such as a white paint, is deposited in the slots to form reflective walls of each mixing chamber. If desired, a phosphor layer is deposited over the encapsulant and reflective walls. The substrate is then singulated to separate out the mixing chambers. Since no discrete parts are assembled, and multiple mixing chambers are formed simultaneously, the resulting mixing chambers are inexpensive and very reliable. | 2016-05-12 |
20160133802 | METHOD OF PRODUCING A CONVERSION ELEMENT - A method of producing a conversion element includes providing a substrate having a surface; forming a first mask structure above the surface, wherein the first mask structure has first webs and first openings arranged between the first webs and the first openings form cavities in which the surface of the substrate is accessible; arranging a second mask structure above the first mask structure, wherein the second mask structure has second webs and second openings arranged between the second webs, the first webs are at least partly covered by the second webs, and the cavities remain at least partly accessible through the second openings; spraying a material into the cavities through the second openings; removing the second mask structure; and removing the first mask structure. | 2016-05-12 |
20160133803 | WAVELENGTH CONVERTED LIGHT EMITTING DEVICE - Embodiments of the invention include a semiconductor structure comprising a light emitting layer. The semiconductor structure is attached to a support such that the semiconductor structure and the support are mechanically self-supporting. A wavelength converting material extends over the sides of the semiconductor structure and the support, wherein the wavelength converting material has a substantially uniform thickness over the top and sides of the semiconductor structure and the support. | 2016-05-12 |
20160133804 | LIGHT EMITTING DEVICE PACKAGE AND LIGHT SYSTEM INCLUDING THE SAME - A light emitting device package may include a package body, a light emitting device on the package body, a first molding member that surrounds the light emitting device, and a second molding member having a hemi-spherical structure to surround the first molding member. The molding member includes a viscous material. | 2016-05-12 |
20160133805 | METHOD OF MANUFACTURING LIGHT-EMITTING APPARATUS, LIGHT-EMITTING MODULE INSPECTING APPARATUS, AND METHOD OF DETERMINING WHETHER LIGHT-EMITTING MODULE MEETS QUALITY REQUIREMENT - A method of manufacturing a light-emitting apparatus includes disposing a substrate on a support; disposing a light-emitting package including a light-emitting device on the substrate so as to allow the light-emitting package to be positioned at a target position on the substrate; applying energy to the light-emitting package to make the light-emitting device emit light; and analyzing the light that is emitted from the light-emitting device due to the energy, and determining a position where the light-emitting package is actually disposed. Thus, the light-emitting apparatus may be easily and inexpensively manufactured, and may generate a limited number of spots and provide improved uniform brightness. | 2016-05-12 |
20160133806 | LIGHT EMITTING DEVICE - A light emitting device includes: a heat dissipative board; a wiring board which adheres and is fixed to the heat dissipative board and in which a through-hole is formed; a light-emitting element which is mounted on a front surface of the heat dissipative board which is exposed through the through-hole of the wiring board; a bonding wire which connects the light-emitting element and the wiring board; and a light-reflecting member which covers a surface of an inner peripheral wall of the through-hole excluding disposition places of the light-emitting element and the bonding wire. | 2016-05-12 |
20160133807 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE PACKAGE, AND LIGHTNING APPARATUS - A semiconductor device includes a light emitting structure, and an interconnection bump including an under bump metallurgy (UBM) layer disposed on an electrode of at least one of the first and second conductivity-type semiconductor layers, and having a first surface disposed opposite to a surface of the electrode and a second surface extending from an edge of the first surface to be connected to the electrode, an intermetallic compound (IMC) disposed on the first surface of the UBM layer, a solder bump bonded to the UBM layer with the IMC therebetween, and a barrier layer disposed on the second surface of the UBM layer and substantially preventing the solder bump from being diffused into the second surface of the UBM layer. | 2016-05-12 |
20160133808 | METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT - A method of manufacturing an optoelectronic component includes providing a leadframe, wherein the leadframe has a first leadframe section and a second leadframe section, and the first leadframe section and the second leadframe section are physically separate from one another; embedding the leadframe into a plastic material by a molding process to form a casing body, wherein the first leadframe section and the second leadframe section are embedded into the plastic material at a physical interval; and reshaping of the plastic material to at least partially close a gap between the plastic material and the leadframe, wherein the plastic material is reshaped in a region arranged between the first leadframe section and the second leadframe section. | 2016-05-12 |
20160133809 | METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - A method for manufacturing a light emitting device, includes a first step of mounting a light emitting element on a support base with a bump; and a second step of clamping the support base and the light emitting element and pressing between a lower molding die and an upper molding die to plastically deform the bump, and injecting the compound of a cover member into a mold cavity between the lower molding die and the upper molding die and curing the compound to form the cover member that covers at least a lower surface of the light emitting element after the first step. | 2016-05-12 |
20160133810 | LIGHT EMITTING DEVICE PACKAGE - A light emitting device package is disclosed. The light emitting device package includes a package body, a heat radiating member disposed in the package body, a light emitting device disposed on the heat radiating member, a bonding member disposed between the light emitting device and the heat radiating member, and a bonding member fixing layer disposed around the bonding member, wherein the bonding member fixing layer has at least one through region. | 2016-05-12 |
20160133811 | High-Power led lamp cooling device and method for manufacturing the same - A high-power LED lamp cooling device and its manufacturing method, which includes: manufacturing a semiconductor crystal bar in advance into cone-shaped crystal bar with one end having large diameter and the other having small diameter, making color mark on each wafer as the large-diameter end surface of the tail end when the cone-shaped semiconductor crystal bar is cut into slices; cutting and pelletizing the conical surface to obtain polygonal cylindrical N-type or P-type semiconductor elements, arranging them in a matrix form between two beryllium-oxide ceramic chips provided with conductive circuits, connecting head end of N-type semiconductor elements to tail end of the P-type semiconductor elements in series to manufacture high-power LED lamp cooling device. The high-power LED lamp cooling device can achieve: good cooling effect, high working efficiency, low energy consumption and capable of reducing light failure of LED lamp, and prolonging service life of the high-power LED lamp. | 2016-05-12 |
20160133812 | THERMOELECTRIC GENERATOR - A thermoelectric generator is provided that can perform thermoelectric generation efficiently. This generator includes: a first heat medium chamber into which a first heat medium flows and out of which the first heat medium flows; a first chamber wall which defines the first heat medium chamber; a second heat medium chamber into which a second heat medium flows and out of which the second heat medium flows; a second chamber wall which defines the second heat medium chamber; and thermoelectric generation layers. The two second heat medium chambers are within the first heat medium chamber. Both the second heat medium chambers are separated from each other and are arranged parallel to each other. The first chamber wall and the second chamber wall are not in contact with each other, and the temperature of the first heat medium and the temperature of the second heat medium are different from each other. The thermoelectric generation layers are provided on the outer surface of the first chamber wall and the outer surface of the second chamber wall. | 2016-05-12 |
20160133813 | On-Chip Thermoelectric Generator - An on-chip thermoelectric generator comprises an integrated circuit comprising a substrate and at least one thermocouple integrated with the substrate, wherein the thermocouple is configured to convert a temperature difference into a voltage. A metal bump or metal pillar is thermally connected to a portion of the thermocouple for generating the temperature difference. The metal bump or metal pillar is electrically insulated from said at least one thermocouple. The metal bump or metal pillar is electrically connected to a component of the integrated circuit which is different from the thermocouple. | 2016-05-12 |
20160133814 | FUEL-FLEXIBLE THERMAL POWER GENERATOR FOR ELECTRIC LOADS - An apparatus and method configured to provide electric power from a thermal source. The apparatus may include a thermoelectric generator and a heat source. The apparatus may include a fuel source. The heat source may be combustive or non-combustive. The apparatus may also include a thermal battery. The heat source may be configured to combust a hydrocarbon fuel to generated heat. The apparatus may include one or more thermal diodes and/or a heat sink to remove waste heat. The method may include converting thermal energy into electrical energy using the apparatus. The method may also include powering a light or other electrical load using the apparatus. The present disclosure includes a method for manufacturing the apparatus. | 2016-05-12 |
20160133815 | THERMOELECTRIC MODULE - A thermoelectric module according to the present invention includes a first support substrate including a principal surface that includes a first region and a second region that is adjacent to the first region; a second support substrate including a principal surface that faces the first region; a plurality of thermoelectric elements arranged between the first region and the principal surface of the second support substrate; and a temperature detection element mounted in the second region. The temperature detection element and the second support substrate are thermally connected to each other by a thermally conductive member. | 2016-05-12 |
20160133816 | WAFER SCALE THERMOELECTRIC ENERGY HARVESTER HAVING INTERLEAVED, OPPOSING THERMOELECTRIC LEGS AND MANUFACTURING TECHNIQUES THEREFOR - An integrated circuit may include a substrate and a dielectric layer formed over the substrate. A plurality of p-type thermoelectric elements and a plurality of n-type thermoelectric elements may be disposed within the dielectric layer that are connected in series while alternating between the p-type and the n-type thermoelectric elements. The integrated circuit may include first and second substrates each having formed thereon a plurality of thermoelectric legs of a respective type of thermoelectric material. The first and second thermoelectric substrates also may have respective conductors, each coupled to a base of an associated thermoelectric leg and forming a mounting pad for coupling to a thermoelectric leg of the counterpart substrate. In other embodiments, one or more substrates may have trenches formed therein to capture eutectic material that facilitates bonds between components from each of the substrates and prevent inadvertent short circuits that may occur between components of the circuit system. | 2016-05-12 |
20160133817 | FUNCTIONAL AND DURABLE THERMOELECTRIC DEVICES AND SYSTEMS - The present disclosure provides a thermoelectric device comprising a panel comprising an electrically and thermally insulating material, and a thermoelectric string comprising a plurality of thermoelectric elements mounted on a strain relief element within the panel. The thermoelectric elements may comprise an n-type thermoelectric element and a p-type thermoelectric element electrically coupled to one another in series. The thermoelectric string may be (i) compacted in cross section inside the panel and (ii) expanded in cross section outside the panel. The strain relief element may permit the thermoelectric string to be movable in proximity to the strain relief element. | 2016-05-12 |
20160133818 | THERMOELECTRIC GENERATION STRUCTURE FOR VEHICLE - A thermoelectric generation structure for a vehicle is provided. The structure includes an exhaust manifold into which exhaust gas is introduced and a cover that is disposed within the exhaust manifold and provided with a cooling water microchannel to perform cooling. A magnetic thermoelectric material is mounted between the cover and the exhaust manifold to generate electricity. Additionally, the magnetic thermoelectric material having an adjustable size and shape is used in the thermoelectric generation device by being mounted in the exhaust manifold of the vehicle to minimize the weight and volume to improve the marketability. The electricity is generated by the magnetic thermoelectric material using the spin seebeck phenomenon to improve the fuel efficiency. | 2016-05-12 |
20160133819 | Fluorine Containing Low Loss Dielectric Layers for Superconducting Circuits - Provided are superconducting circuits and methods of forming such circuits. A circuit may include a silicon containing low loss dielectric (LLD) layer formed by fluorine passivation of dangling bonds of silicon atoms in the layer. The LLD layer may be formed from silicon nitride or silicon oxide. For uniform passivation (e.g., uniform distribution of fluorine within the LLD layer), fluorine may be introduced while forming the LLD layer. For example, a fluorine containing precursor may be supplied into a deposition chamber together with a silicon containing precursor. Alternatively, the LLD layer may be formed as a stack of many thin sublayers, and each sublayer may be subjected to individual fluorine passivation. For example, low power plasma treatment or annealing in a fluorine containing environment may be used for this purpose. The concentration of fluorine in the LLD layer may be between about 0.5% atomic and 5% atomic. | 2016-05-12 |
20160133820 | SURFACE ACOUSTIC WAVE DEVICE HAVING COMBINABLE SELECTABLE ELECTRODE SUB-ELEMENTS - Described embodiments include a surface acoustic wave device, method, and apparatus. The device includes a piezoelectric substrate and a configurable electrode assembly. The assembly includes a plurality of spaced-apart elongated electrode sub-elements electromechanically coupled with the piezoelectric substrate. The assembly includes a first signal bus crossing each electrode sub-element of the plurality of electrode sub-elements and electrically isolated therefrom. The assembly includes a first matrix of addressable switches. Each addressable switch of the first matrix configured to electrically couple a respective electrode sub-element of the plurality of electrode sub-elements with the first signal bus. The assembly includes a second signal bus crossing each electrode sub-element of the plurality of electrode sub-elements and electrically isolated therefrom. The assembly includes a second matrix of addressable switches. Each addressable switch of the second matrix configured to electrically couple a respective electrode sub-element of the plurality of electrode sub-elements with the second signal bus. | 2016-05-12 |
20160133821 | SURFACE ACOUSTIC WAVE DEVICE HAVING MATRICES OF COMBINABLE SELECTABLE ELECTRODE SUB-ELEMENTS - Described embodiments include a surface acoustic wave device, method, and apparatus. The device includes a piezoelectric substrate and a configurable electrode assembly. The assembly includes N stacked instances of electrode assembly sub-units. Each electrode assembly sub-unit includes: a plurality M of elongated electrode sub-elements electromechanically coupled with the piezoelectric substrate; an electrically isolated first signal bus crossing each of the electrode sub-elements; a first matrix of individually addressable switches, each addressable switch of the first matrix configured to electrically couple a respective electrode sub-element of the plurality M of electrode sub-elements with the first signal bus; an electrically isolated second signal bus crossing each of the electrode sub-elements; and a second matrix of individually addressable switches, each addressable switch of the second matrix configured to electrically couple a respective electrode sub-element of the plurality M of electrode sub-elements with the second signal bus. | 2016-05-12 |
20160133822 | METHOD AND APPARATUS FOR DYNAMIC-TUNING - A compliant apparatus for nano-manufacture, including a stage for supporting the objects to be nano-manufactured. The stage includes at least one flexural beam and at least one actuator coupled to the flexural beam; and the actuator is configured to generate and apply axial loads onto the flexural beam, such that a natural frequency of the flexural beam is shifted in response to the generated axial loads, so as to allow trade-offs between the natural frequency and a stroke of the stage for nano-manufacturing the objects. | 2016-05-12 |
20160133823 | COMPOSITE SUBSTRATE AND METHOD OF PRODUCING THE SAME - In the composite substrate | 2016-05-12 |
20160133824 | ACTUATOR - An actuator that includes a plate-like elastic member. When seen from a first principal surface side in a plan view, the plate-like elastic member has a shape in which the elastic member extends along a circular arc-shaped center line. The plate-like elastic member is torsionally displaced relative to the circular arc-shaped center line as a central axis. | 2016-05-12 |
20160133825 | PIEZOELECTRIC LAYER, PIEZOELECTRIC COMPONENT, PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC SENSOR, HARD-DISK DRIVE AND INK JET PRINTER - A piezoelectric layer made of potassium sodium niobate which is a perovskite type compound represented by the formula ABO | 2016-05-12 |
20160133826 | METHOD OF MAKING LEAD-FREE CERAMIC COATING - A method of making a lead-free ceramic coating is provided. The method includes providing a lead-free ceramic composition with a crystalline phase of perovskite structure. The ceramic composition has a general formula of: (1-a)(K | 2016-05-12 |
20160133827 | NON-VOLATILE LOGIC DEVICE - A non-volatile logic device, comprising: a first input element magnetizable along a first direction to impart or change a chirality of a domain wall traversing the first input element a second input element configured to transport the domain wall, a magnetization of the second input element along a second direction representing a second logical input; a bifurcated output section comprising a pair of output elements for receiving the domain wall from the second input element, a magnetization of at least part of the output elements being changeable by propagation of the domain wall along the output elements; and a non-magnetic conductive element; wherein the magnetization in an output element after propagation of the domain wall represents a value of a logical function selectable by passing an electrical current through the non-magnetic conductive element to induce a magnetic field of a desired magnitude and direction in the second input element. | 2016-05-12 |
20160133828 | EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) INTEGRATION WITH TOP CONTACTS - A magnetoresistive random access memory (MRAM) device includes a top electrode or top contact above a metal hard mask which has a limited height due to process limitations in advanced nodes. The metal hard mask is provided on a magnetic tunnel junction (MTJ). The top contact for the MTJ is formed within a dielectric layer, such as a low dielectric constant (low-k) or extremely low-k layer. An additional dielectric layer is provided above the top contact for additional connections for additional circuitry to form a three-dimensional integrated circuit (3D IC). | 2016-05-12 |
20160133829 | High Stability Spintronic Memory - An embodiment includes a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers; the tunnel barrier directly contacting a first side of the free layer; and an oxide layer directly contacting a second side of the free layer; wherein the tunnel barrier includes an oxide and has a first resistance-area (RA) product and the oxide layer has a second RA product that is lower than the first RA product. The MTJ may be included in a perpendicular spin torque transfer memory. The tunnel barrier and oxide layer form a memory having high stability with an RA product not substantively higher than a less table memory having a MTJ with only a single oxide layer. Other embodiments are described herein. | 2016-05-12 |
20160133830 | INTEGRATED CIRCUIT STRUCTURES WITH SPIN TORQUE TRANSFER MAGNETIC RANDOM ACCESS MEMORY ULTILIZING ALUMINUM METALLIZATION LAYERS AND METHODS FOR FABRICATING THE SAME - STT-MRAM integrated circuits employing aluminum metallization layers and methods for fabricating the same are disclosed. A method for fabricating an integrated circuit includes forming a first metallization layer including an aluminum material, forming a magnetic tunnel junction (MTJ) structure over the first metallization layer, and forming an encapsulation layer over the MTJ structure and over the first metallization layer. The method further includes etching the encapsulation layer and the first metallization layer to form an encapsulation segment overlying a first metal line, forming a contact plug to the MTJ structure, and forming a second metal line including an aluminum material over the contact plug. | 2016-05-12 |
20160133831 | METHOD OF FORMING METAL OXIDE LAYER AND MAGNETIC MEMORY DEVICE INCLUDING THE SAME - A method of forming a metal oxide layer and a magnetic memory device includes a post-oxidation process in which a process cycle is performed at least once, which includes depositing a metal layer on a magnetic layer and oxidizing the metal layer. | 2016-05-12 |
20160133832 | METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT(S) - A planar STT-MRAM includes apparatus, made by a method of operating and a method of manufacturing a spin-torque magnetoresistive memory and a plurality of magnetoresistive memory element having a ferromagnetic recording layer forming a flux closure with a self-aligned ferromagnetic soft adjacent layer which has an electric field enhanced perpendicular anisotropy through an interface interaction with a dielectric functional layer. The energy switch barrier of the soft adjacent layer is reduced under an electric field along a perpendicular direction with a proper voltage on a digital line from a control circuitry; accordingly, the in-plane magnetization of the recording layer is readily reversible in a low spin-transfer switching current. | 2016-05-12 |
20160133833 | REPLACEMENT CONDUCTIVE HARD MASK FOR MULTI-STEP MAGNETIC TUNNEL JUNCTION (MTJ) ETCH - A multi-step etch technique for fabricating a magnetic tunnel junction (MTJ) apparatus includes forming a first conductive hard mask on a first electrode of the MTJ apparatus for etching the first electrode during a first etching step. The method also includes forming a second conductive hard mask on the first conductive hard mask for etching magnetic layers of the MTJ apparatus during a second etching step. A spacer layer is conformally deposited on sidewalls of the first conductive hard mask. The second conductive hard mask is deposited on the first conductive hard mask and aligned with the spacer layer on the sidewalls of the first conductive hard mask. | 2016-05-12 |
20160133834 | PLASMA ETCHING METHOD - In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum. | 2016-05-12 |
20160133835 | Integrated Circuitry Comprising Nonvolatile Memory Cells And Methods Of Forming A Nonvolatile Memory Cell - An integrated circuit has a nonvolatile memory cell that includes a first electrode, a second electrode, and an ion conductive material there-between. At least one of the first and second electrodes has an electrochemically active surface received directly against the ion conductive material. The second electrode is elevationally outward of the first electrode. The first electrode extends laterally in a first direction and the ion conductive material extends in a second direction different from and intersecting the first direction. The first electrode is received directly against the ion conductive material only where the first and second directions intersect. Other embodiments, including method embodiments, are disclosed. | 2016-05-12 |
20160133836 | HIGH ENDURANCE NON-VOLATILE STORAGE - The manufacturing of the non-volatile storage system includes depositing one or more layers of reversible resistance-switching material for a non-volatile storage element. Prior to operation, either during manufacturing or afterwards, a forming operation is performed. In one embodiment, the forming operation includes applying a forming voltage to the one or more layers of reversible resistance-switching material to form a first region that includes a resistor and a second region that can reversibly change resistance at a low current, the resistor is formed in response to the forming condition and is not deposited on the device. In some embodiments, programming the non-volatile storage element includes applying a programming voltage that increases in voltage over time at low current but does not exceed the final forming voltage. | 2016-05-12 |
20160133837 | Low-Temperature Deposition of Metal Silicon Nitrides from Silicon Halide Precursors - Metal silicon nitride nanolaminates are formed at temperatures of 200-400 C by alternating ALD monolayers or thin CVD layers of metal nitride and silicon nitride. The silicon nitride layers are formed from a silicon halide precursor, causing nitrogen bonds to replace the halogen bonds, which is a lower-energy reaction than bonding nitrogen to elemental silicon. The silicon content, and thereby the resistivity, of the nanolaminate can be tuned by either a sub-saturation dose of the silicon halide precursor (forming ALD sub-monolayers) or by the relative number of metal nitride and silicon nitride layers. Resistivities between 1 and 500 Ω·cm, suitable for ReRAM embedded resistors, can be achieved. Some of the nanolaminates can function as combination embedded resistors and electrodes. | 2016-05-12 |
20160133838 | MANUFACTURING FLEXIBLE ORGANIC ELECTRONIC DEVICES - A method of forming microelectronic systems on a flexible substrate includes depositing (typically sequentially) on a first side of the flexible substrate at least one organic thin film layer, at least one electrode and at least one thin film encapsulation layer over the at least one organic thin film layer and the at least one electrode, wherein depositing the at least one organic thin film layer, depositing the at least one electrode and depositing the at least one thin film encapsulation layer each occur under vacuum and wherein no physical contact of the at least one organic thin film layer or the at least one electrode with another solid material occurs prior to depositing the at least one thin film encapsulation layer. | 2016-05-12 |
20160133839 | Light Emitting Hybrid Semiconductors Based on IB-VII Binary Compounds - Inorganic-organic hybrid IB-VII semiconductor compounds, in which a Group IB transition metal halide salt is coordinated with an organic heteroaromatic ligand, wherein at least one ring atom of said heteroaromatic ligand is a heteroatom independently selected from N, O and S and the Group IB metal of the halide salt is coordinated to a ring heteroatom. Also disclosed are semiconductor and light emitting devices comprising these materials, including light emitting diodes, and methods of preparing these materials and devices. | 2016-05-12 |
20160133840 | ORGANIC LIGHT EMISSION DISPLAY DEVICE, AND METHOD AND THIN FILM DEPOSITION APPARATUS OF FABRICATING THE SAME - Disclosed is an organic light emission display device including; a substrate in which a first side area, a middle area, and a second side are sequentially defined in a first direction; a first electrode disposed on the substrate; a second electrode opposite to the first electrode; a red emission layer disposed between the first and second electrodes; a first subsidiary layer disposed between the red emission layer and the first electrode in the middle area, and configured to adjust a resonant range; and a second subsidiary layer disposed between the red emission layer and the first electrode respectively in the first and second side areas, and configured to adjust a resonant range. The first subsidiary layer is different from the second subsidiary layer in thickness. | 2016-05-12 |
20160133841 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY - A manufacturing method of an organic light emitting diode display is disclosed. In one aspect, the method includes forming a thin film transistor and a first electrode over a substrate and forming a first organic emission layer over the first electrode. The method further includes forming a second organic emission layer over the first organic emission layer, applying heat to the first and second organic emission layers and forming a second electrode over the second organic emission layer. | 2016-05-12 |
20160133842 | POLYMER COMPOUND, MATERIAL FOR ORGANIC ELECTROLUMINESCENCE ELEMENT USING SAME, AND ORGANIC ELECTROLUMINESCENCE ELEMENT - A polymer compound which includes repeating units represented by formula (1-1) or (1-2) and an organic EL device including the polymer compound as an organic layer are provided: | 2016-05-12 |
20160133843 | PURIFICATION OF CARBON NANOTUBES VIA SELECTIVE HEATING - The present invention provides methods for purifying a layer of carbon nanotubes comprising providing a precursor layer of substantially aligned carbon nanotubes supported by a substrate, wherein the precursor layer comprises a mixture of first carbon nanotubes and second carbon nanotubes; selectively heating the first carbon nanotubes; and separating the first carbon nanotubes from the second carbon nanotubes, thereby generating a purified layer of carbon nanotubes. Devices benefiting from enhanced electrical properties enabled by the purified layer of carbon nanotubes are also described. | 2016-05-12 |
20160133844 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode and including an emission layer. The organic layer includes a first material represented by Formula 1 and a second material represented by Formula 2: | 2016-05-12 |
20160133845 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer, wherein the emission layer includes a first compound represented by the following Formula 1, and a second compound represented by one of the following Formulae 2-1 to 2-4: | 2016-05-12 |
20160133846 | ORGANIC LIGHT EMITTING ELEMENT - Provided is an organic light emitting element including: an anode; a cathode; and an organic compound layer formed between the anode and the cathode and including a hole injection layer, a hole transport layer, and an emission layer, in which: the emission layer includes a host and a dopant; the hole transport layer includes a hole transport material having multiple aromatic hydrocarbon skeletons and a single bond for linking the aromatic hydrocarbon skeletons; the hole transport material has a triplet level T | 2016-05-12 |
20160133847 | AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT ELEMENT - An object of the invention is to provide an organic EL device which operates at a reduced driving voltage and has a prolonged lifetime. The aromatic amine derivative of the invention is represented by formula (1): | 2016-05-12 |
20160133848 | HETEROCYCLIC COMPOUNDS AND ORGANIC ELECTROLUMINESCENT DEVICES USING THE SAME - The present invention discloses a novel heterocyclic compound of Formula (1) and an organic electroluminescent device using the same, in which variables are as described herein. The heterocyclic compound of Formula (1) is present in the emitting layer as a light emitting host in combination with a dopant and another host, in the organic electroluminescent device and high luminous efficiency and low driving voltage are achieved. | 2016-05-12 |
20160133849 | MATERIAL FOR ORGANIC ELECTROLUMINESCENT DEVICE AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME - A novel and improved material for an organic electroluminescent device includes at least one monoamine compound represented by any one of the following Formulae I to III: | 2016-05-12 |
20160133850 | ORGANIC ELECTROLUMINESCENT DEVICE - An organic electroluminescent device of which emission life may be improved. The organic electroluminescent device includes an anode, an emission layer, and an anode-side hole transport layer provided between the anode and the emission layer and including an anode-side hole transport material. An electron accepting material is doped in the anode-side hole transport layer. An intermediate hole transport material layer is provided between the anode-side hole transport layer and the emission layer and includes an intermediate hole transport material, and an emission layer-side hole transport layer is provided between the intermediate hole transport material layer and the emission layer and adjacent to the emission layer. The emission layer-side hole transport layer includes an emission layer-side hole transport material represented by the following Formula 1. | 2016-05-12 |
20160133851 | COMPOSITION, ORGANIC OPTOELECTRONIC ELEMENT, AND DISPLAY DEVICE - A composition including a first host compound represented by Chemical Formula I and a second host compound represented by Chemical Formula II, and an organic optoelectronic device and a display device including the composition are disclosed. | 2016-05-12 |
20160133852 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer, wherein the organic layer includes a first compound represented by Formula 1, below, and a second compound represented by Formula 2, below, | 2016-05-12 |
20160133853 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer; wherein the emission layer includes a first host represented by the following Formula 1, and a second host represented by the following Formula 2: | 2016-05-12 |
20160133854 | Materials for Electronic Devices - The present invention relates to a compound, comprising a pyrene skeleton and arylamino groups, according to formula (I). The compound is suitable for use as a functional material in electronic devices. | 2016-05-12 |
20160133855 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device is disclosed. The organic light emitting display device comprises an anode; an organic layer on the anode; and a cathode on the organic layer, wherein the organic layer comprises a compound including a carbazole compound having hole characteristics and a material having electron characteristics. | 2016-05-12 |
20160133856 | DELAYED FLUORESCENCE COMPOUND, AND ORGANIC LIGHT EMITTING DIODE AND DISPLAY DEVICE USING THE SAME - Embodiments relate to a delayed fluorescence compound of Formula 1: | 2016-05-12 |
20160133857 | COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A compound, an organic light-emitting device, and a flat panel display apparatus, the compound being represented by the following Formula 1: | 2016-05-12 |
20160133858 | Semiconducting Compounds and Devices Incorporating Same - Disclosed are molecular and polymeric compounds having desirable properties as semiconducting materials. Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability. Organic transistor and photovoltaic devices incorporating the present compounds as the active layer exhibit good device performance. | 2016-05-12 |
20160133859 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - A compound having a formula M(L | 2016-05-12 |
20160133860 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - A compound having a formula M(L | 2016-05-12 |
20160133861 | EMITTERS BASED ON OCTAHEDRAL METAL COMPLEXES - Iridium, rhodium, and platinum complexes suitable for use as phosphorescent emitters or as delayed fluorescent and phosphorescent emitters having the following structures: | 2016-05-12 |
20160133862 | TETRADENTATE METAL COMPLEXES WITH CARBON GROUP BRIDGING LIGANDS - Platinum, palladium, and gold complexes suitable for use as phosphorescent emitters or as delayed fluorescent and phosphorescent emitters having one of the following structures: | 2016-05-12 |
20160133863 | FORMULATION AND METHOD FOR PREPARATION OF ORGANIC ELECTRONIC DEVICES - The present invention relates to novel formulations comprising an organic semiconductor (OSC) and one or more organic solvents. The formulation comprises a viscosity at 25° C. of less than 15 mPas and the boiling point of the solvent is at most 400° C. Furthermore, the present invention describes the use of these formulations as inks for the preparation of organic electronic (OE) devices, especially organic photovoltaic (OPV) cells and OLED devices, to methods for preparing OE devices using the novel formulations, and to OE devices, OLED devices and OPV cells prepared from such methods and formulations. | 2016-05-12 |
20160133864 | DISPLAY DEVICE MANUFACTURE - A method of manufacturing a display device is provided which uses a sacrificial layer interposed between a carrier and a display device substrate. | 2016-05-12 |
20160133865 | SOLID-STATE IMAGING ELEMENT, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE - A solid-state imaging element including a phase difference detection pixel pair that includes first ( | 2016-05-12 |
20160133866 | Organic Light-Emitting Diode Fluorescent Device and Method for Producing Same - An organic light-emitting diode fluorescent device includes an anode layer, a hole injection layer, an emissive layer, an electron injection layer, and a cathode layer. A confinement layer is disposed on at least one of an upper face and a lower face of the emissive layer. The confinement layer has a triplet energy level higher than a triplet energy level of the emissive layer. A method for producing the organic light-emitting diode fluorescent device includes providing an anode substrate as an anode layer and disposing a hole injection layer, an emissive layer, an electron injection layer, and a cathode layer on the anode layer in sequence. A confinement layer is disposed on at least one of an upper face and a lower face of the emissive layer while producing the emissive layer. The confinement layer has a triplet energy level higher than a triplet energy level of the emissive layer. | 2016-05-12 |
20160133867 | ORGANIC EL ELEMENT AND ORGANIC EL DISPLAY PANEL - An organic electroluminescence (EL) element that has an anode; a cathode; an organic light-emitting layer between the anode and the cathode that emits light according to recombination of holes injected from the anode and electrons injected from the cathode; and an electron transport layer between the cathode and the organic light-emitting layer that transports electrons from the cathode to the organic light-emitting layer. The electron transport layer includes an n-type dopant that includes an electron-donating substance, the electron transport layer being doped with the n-type dopant at a doping concentration that is higher than a doping concentration at which light emittance efficiency of the organic light-emitting layer is greatest. | 2016-05-12 |
20160133868 | LIGHT-EMITTING DEVICE WITH ALTERNATING ARRANGEMENT OF ANODE PADS AND CATHODE PADS - The invention relates to a light-emitting device like an OLED comprising a light emission region between an anode ( | 2016-05-12 |
20160133869 | DISPLAY DEVICE AND MANUFACTURING METHOD FOR THE SAME - A display device including: a substrate; first and second lower electrodes disposed with a gap therebetween; a partition wall containing resin material; first and second organic functional layers; and an upper electrode. The bottom face of the partition wall includes a first portion and two second portions. A height difference between the first portion and the second portion is no more than 30% of a height difference between the first portion and a maximum height point of a top face of the partition wall. The second portions each have a width no more than 20% of an overall width of the partition wall. The first portion corresponds to a part of the partition wall corresponding to the gap. The second portions respectively correspond to parts of the partition wall covering a portion of the first lower electrode and a portion of the second lower electrode. | 2016-05-12 |
20160133870 | Sintering Method and Display Device Packaging Method using the Same - A sintering method includes defining a closed pattern having at least one arcuate section. A substance is applied on a substrate along the closed pattern and is sintered along the closed pattern in a first rectilinear direction. The sintering is finished in a second rectilinear direction along the closed pattern. A display device packaging method includes defining a closed pattern having at least one arcuate section. Frit is applied on a substrate of a display device along the closed pattern. A cover plate is provided on the substrate. The frit is sintered along the closed pattern. The sintering is finished in a second rectilinear direction. Then, the cover plate and the substrate of the display device are packaged. | 2016-05-12 |
20160133871 | FLEXIBLE DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A flexible display apparatus includes a flexible substrate, a display layer disposed on one surface of the flexible substrate and including a plurality of pixels, graphene disposed on a surface opposing the one surface of the flexible substrate, and an encapsulation layer covering the display layer. | 2016-05-12 |