19th week of 2012 patent applcation highlights part 15 |
Patent application number | Title | Published |
20120112115 | Sealing Arrangement For A Down Hole Valve - The present invention regards a sealing arrangement for a valve, comprising a valve element ( | 2012-05-10 |
20120112116 | MELAMINE RESIN FOAM WITH INORGANIC FILLING MATERIAL - Melamine-formaldehyde foams comprise from 80% to 98% by weight of an inorganic filling material, wherein the % by weight are based on the total weight of inorganic filling material plus melamine-formaldehyde precondensate used for foam production. | 2012-05-10 |
20120112117 | THERMALLY INSULATING POLYMER FOAM/AEROGEL COMPOSITE ARTICLES - Prepare an article of manufacture having an extruded thermoplastic polymer foam defining at least one cavity, the cavity containing aerogel material by providing a polymer foam defining a cavity and placing the aerogel material into the cavity. | 2012-05-10 |
20120112118 | Soundproofing Nanoclay Composite and Method of Manufacturing the Same - Disclosed is a method of manufacturing soundproofing composite, and a soundproofing composite manufactured by the aforementioned method, the method comprising preparing a mixture by dissolving PP resin and nanoclay in a solvent; and volatilizing the solvent from the mixture. According to the present invention, the composite is manufactured by dissolving PP resin and nanoclay, to thereby realize great stiffness and soundproofing properties. | 2012-05-10 |
20120112119 | COMPOSITION FOR TREATMENT OF ROADWAY - The heat conductivity of a cementitious roadway is improved by adding into the cementitious concentration a powder mixture of a tin alloy or a tin and other powder. Preferably, the alloy is a tin-niobium alloy. Alternatively, a tin powder and a niobium powder are admixed into the composition. Where the powders are used each of the components are present in a 50:50 weight ratio. The powder admixture can also be incorporated into an aqueous latex topcoat for application to a road surface. | 2012-05-10 |
20120112120 | USE OF SOLID BETAINE PRODUCT AND METHOD FOR ITS MANUFACTURE - The invention relates to the use of solid betaine for de-icing and/or preventing slipperiness. The solid betaine comprises at least one non-betaine compound affecting water and/or moisture movement in said solid betaine. The invention further relates to a process for the manufacture of solid betaine. A suspension comprising betaine crystals is prepared from a feed liquid and the betaine crystals are separated and washed. The amount of wash liquid is adjusted in order to leave 0.5 to 10 w-% of at least one non-betaine compound in said solid betaine. | 2012-05-10 |
20120112121 | EMULSIONS OF HEAT TRANSFER FLUIDS INCLUDING NANODROPLETS TO ENHANCE THERMAL CONDUCTIVITIES OF THE FLUIDS - A heat transfer fluid emulsion includes a heat transfer fluid, and liquid droplets dispersed within the heat transfer fluid, where the liquid droplets are substantially immiscible with respect to the heat transfer fluid and have dimensions that are no greater than about 100 nanometers. In addition, the thermal conductivity of the heat transfer fluid emulsion is greater than the thermal conductivity of the heat transfer fluid. | 2012-05-10 |
20120112122 | MICROCAPSULES WITH POLYVINYL MONOMERS AS CROSSLINKER - The present invention relates to microcapsules comprising a capsule core and a capsule wall, where the capsule wall is constructed from | 2012-05-10 |
20120112123 | ETCHING COMPOSITION FOR AN UNDER-BUMP METALLURGY LAYER - In an etching composition for an under-bump metallurgy (UBM) layer and a method of forming a bump structure, the etching composition includes about 40% by weight to about 90% by weight of hydrogen peroxide (H | 2012-05-10 |
20120112124 | ALUMINUM ETCHANT - An aluminum etchant includes 3-30 wt % of hydrochloric acid, 4-20 wt % of sulfuric acid, and water for the rest. The etchant can produce circuits of 200-25 μm wide on an aluminum foil or aluminum plate. The circuit has good quality. Therefore, the invention is suitable for miniaturized products that require higher precision. | 2012-05-10 |
20120112125 | CATHODE ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY - Provided is a cathode active material for a lithium secondary battery, including a lithium-transition metal composite oxide represented by the following formula (1), which contains an excess of lithium, so as to exhibit enhanced rate characteristics under high rate charge/discharge conditions: Lii+aNi′bNi″cMndCoeO2 (1) wherein each of a, b, c, d and e has the same meaning as defined in the disclosure. The cathode active material according to the present invention includes an excess of lithium and, different from conventional technologies, a lithium-transition metal composite oxide containing a nickel element with a predetermined oxidation number, so that the active material exhibits a stable crystal structure and excellent rate characteristics under high rate charge/discharge conditions. | 2012-05-10 |
20120112126 | NEGATIVE ELECTRODE ACTIVE MATERIAL OF LITHIUM SECONDARY BATTERY, NEGATIVE ELECTRODE OF LITHIUM SECONDARY BATTERY, LITHIUM SECONDARY BATTERY FOR VEHICLE INSTALLATION USING THE NEGATIVE ELECTRODE ACTIVE MATERIAL AND NEGATIVE ELECTRODE, AND METHOD FOR MANUFACTURING THE NEGATIVE ELECTRODE ACTIVE MATERIAL - A negative electrode active material of lithium secondary battery includes: at least one of a petroleum-derived green coke and a coal-derived green coke; and at least one of a petroleum-derived calcined coke and a coal-derived calcined coke within a mass ratio range of 90:10 to 10:90 which are fired. | 2012-05-10 |
20120112127 | RECOVERY OF ORGANIC ACIDS - A method is disclosed for the recovery of an organic acid from a dilute salt solution in which the cation of the salt forms an insoluble carbonate salt. A tertiary amine and CO | 2012-05-10 |
20120112128 | METHODS OF PRODUCING METALLIC PEROXIDE COMPOSITIONS FOR USE IN GROUNDWATER DECONTAMINATION - An improved and efficient method of producing a composition containing a metal peroxide capable of enhancing microbial degradation of contaminants in soil and groundwater. The method includes reacting a metal oxide or metal hydroxide with hydrogen peroxide in a solution of water containing a reaction moderator, intercalation agent, and a gelling agent. | 2012-05-10 |
20120112129 | GREEN EMITTING MATERIAL - The invention relates to an improved green emitting material of the form M | 2012-05-10 |
20120112130 | GREEN-EMITTING, GARNET-BASED PHOSPHORS IN GENERAL AND BACKLIGHTING APPLICATIONS - Disclosed herein are green-emitting, garnet-based phosphors having the formula (Lu | 2012-05-10 |
20120112131 | ELECTROPHORETIC DISPERSION - The present invention is directed to an electrophoretic dispersion comprising pigment particles dispersed in a solvent or solvent mixture, wherein said pigment particles comprises at least one polymer chain comprising a terminal thiocarbonylthio group, attached to the particle surface. The invention also relates to pigment particles suitable for use in an electrophoretic dispersion and methods for their preparation through a RAFT polymerization technique. | 2012-05-10 |
20120112132 | Method Of Exploiting Particle Morphology To Optimize Granular Structure And Charge/Discharge Performance Of Lithium Ion Battery Cathodes - A method is provided for forming a high-capacity, high-rate lithium ion battery cathode material. The method includes providing a synthesized material of electrochemically active plate-shaped nanoparticles and adding a plurality of appropriately sized diluent particles to the plate-shaped nanoparticles to form a suspension. Any liquid is removed from the solution to form a composite material. The method also includes processing the composite material to form a high-capacity, high-rate lithium ion battery cathode material. | 2012-05-10 |
20120112133 | POLYURETHANE MATERIALS COMPRISING CARBON NANOTUBES - The invention relates to semicrystalline polyurethane (PU) compositions which have been filled with carbon nanotubes (CNTs) and have improved electrical properties, and which are obtainable on the basis of water-based polyurethane-CNT mixtures. The invention further relates to a process for producing the polyurethane compositions, in which water-based polyurethane latices are mixed with carbon nanotubes dispersed in water. The invention further relates to films produced by pressurized injection moulding processes or processing of casting solutions. | 2012-05-10 |
20120112134 | Blending Improvement Carbon-Composite having Carbon-Nanotube and its Continuous Manufacturing Method and Apparatus - Provided area carbon nanotube composite material obtained by treating a mixture including carbon nanotubes, at least one carbon compound other than carbon nanotubes and a dispersion medium under a sub-critical or super-critical condition of 50-400 atm, and a method for producing the same. More particularly, the method for producing a carbon nanotube composite material, includes: introducing a mixture including carbon nanotubes, at least one carbon compound other than carbon nanotubes and a dispersion medium into a preheating unit under a pressure of 1-400 atm to preheat the mixture; treating the preheated mixture under a sub-critical or super-critical condition of 50-400 atm; cooling and depressurizing the resultant product to 0-1000 C and 1-10 atm; and recovering the cooled and depressurized product. Provided also is an apparatus for producing a carbon nanotube composite material in a continuous manner. | 2012-05-10 |
20120112135 | METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTOR CRYSTAL, AND SEMICONDUCTOR CRYSTAL - A method of producing a semiconductor crystal is provided. The method includes the steps of preparing a longitudinal container with a seed crystal and an impurity-containing melt placed in a bottom section and with a suspension part arranged in an upper section and suspending a dropping raw material block made of a semiconductor material having an impurity concentration lower than the impurity concentration of the impurity-containing melt, and creating a temperature gradient in the longitudinal direction of the longitudinal container to melt the dropping raw material block, and solidifying the impurity-containing melt from the side that is in contact with the seed crystal ( | 2012-05-10 |
20120112136 | ANISOTROPIC CONDUCTIVE ADHESIVE - An anisotropic conductive adhesive for anisotropic conductive connection of an electronic component to a wiring board under no pressure or a low pressure is prepared by dispersing conductive particles in a binder resin composition. A metal flake powder having a major axis of 10 to 40 μm, a thickness of 0.5 to 2 μm, and an aspect ratio of 5 to 50, is used as the conductive particles, the minor axis of the metal flake power being, in a length, 10 to 50% of the major axis. The amount of the conductive particles contained in the anisotropic conductive adhesive is 5 to 35 mass %. | 2012-05-10 |
20120112137 | MANUFACTURING METHOD FOR METAL OXIDE SEMICONDUCTOR MATERIAL FOR GAS SENSOR - Provided is a manufacturing method of a metal oxide semiconductor material for gas sensors by which an oxide precursor and noble metal colloid particles will not readily cohere in the manufacturing process. The manufacturing process implements a precursor solution synthesis step | 2012-05-10 |
20120112138 | TRANSPARENT CONDUCTIVE FILM - A transparent conductive film which is an indium zinc oxide film comprising In | 2012-05-10 |
20120112139 | CATHODE BASED UPON TWO KINDS OF COMPOUNDS AND LITHIUM SECONDARY BATTERY COMPRISING THE SAME - Provided is a cathode for lithium secondary batteries comprising a combination of one or more compounds selected from Formula 1 and one or more compounds selected from Formula 2. The cathode provides a high power lithium secondary battery composed of a non-aqueous electrolyte which exhibits long lifespan, long-period storage properties and superior stability at ambient temperature and high temperatures. | 2012-05-10 |
20120112140 | Photosensitive Resin Composition for Color Filter and Color Filter Using Same - A photosensitive resin composition for a color filter and a color filter using the same are provided. The photosensitive resin composition for a color filter includes (A) an acrylic-based binder resin including a structural unit represented by the following Chemical Formula 1; (B) an acrylic-based photopolymerizable monomer; (C) a photopolymerization initiator; (D) a pigment; and (E) a solvent. | 2012-05-10 |
20120112141 | Photosensitive Resin Composition for Color Filter and Color Filter Using Same - Disclosed are a photosensitive resin composition for a color filter and a color filter including the same. The photosensitive resin composition for a color filter may include (A) an acrylic-based copolymer including a structural unit represented by the following Chemical Formula 1 and a structural unit represented by the following Chemical Formula 2; (B) an acrylic-based photopolymerizable monomer; (C) a photopolymerization initiator; (D) a pigment; and (E) a solvent. | 2012-05-10 |
20120112142 | CURABLE COLORING COMPOSITION, COLOR FILTER AND METHOD FOR PRODUCING SAME, AND QUINOPHTHALONE DYE - To provide a curable coloring composition that has good color hue, high transmittance properties, high light fastness and heat fastness, and excellent stability over time and solvent resistance after curing, a color filter that has good color hue, high transmittance properties, and excellent light fastness, heat fastness, and solvent resistance, and is compatible with high resolution, and a method for producing same. | 2012-05-10 |
20120112143 | Lifting Apparatus - One disclosed lifting apparatus includes a base, a receiving portion, first and second arms, and a support. The base has a proximal end, a distal end, and first and second opposed sides. The first side has a plurality of receiving areas spaced apart between the proximal and distal ends. The arms are rotatably coupled to the base for movement between lowered and raised positions, and are coupled to the receiving portion. The receiving portion is relatively near the base distal end when the first and second arms are at the lowered position, and the receiving portion is relatively distant to the base distal end when the first and second arms are at the raised position. The support rotatably extends from the first arm and automatically engages at least one of the receiving areas when the first and second arms move from the lowered position to the raised position. | 2012-05-10 |
20120112144 | GRAPHITE / TITANIUM HAMMER - According to disclosure, the hammer has a head made of striking grade steel. The handle comprises a 6-4 titanium hand grip and over strike plate insert in the handle and under the head. The head has an eye for accommodating a handle which in a preferred embodiment is made of a graphite titanium composite comprising from about 60 to 65% graphite by weight and from about 35 to 45% 6-4 titanium. The head of hammer has a claw end and a striking head. Also disclosed is a method of manufacturing the device of the disclosure comprising using one or more bladder compressed carbon fiber processes to anneal the graphite, titanium and steel components of the hammer. | 2012-05-10 |
20120112145 | ELECTRIC CAPSTAN - An electric capstan that supplies water, and which occupies less space and has a low cost. The electric capstan includes a motor, a reduction gear and a winching roller. The electric capstan further includes a water pump, and the input shaft of the water pump is connected to the output shaft of the motor. | 2012-05-10 |
20120112146 | Crane with a freely positionable oil pump handle - A crane with a freely positionable oil pump handle: the present invention relates to an easily operated crane with a freely positionable oil pump handle which significantly enlarges the working area of the operators and considerably broadens the application area of the crane, thereby widening the market prospects. | 2012-05-10 |
20120112147 | JACK STAND AND COMBINATION & METHOD OF ELEVATING A LOAD - The combination of a jack stand and a vertically oriented, compact hydraulic jack enables a user to avoid misplacement when lifting a load. The stand includes a vertically oriented column moveable between a plurality of different elevated positions. An underside of an overhanging member attached to the column is engaged by a piston member of the jack to elevated the column as the jack is elevated, | 2012-05-10 |
20120112148 | Fire Pen - An architecture is presented that provides a barrier device for protecting recreational fires from accidental intrusion by small children and animals. The barrier device comprises a plurality of gate panels linearly connected by a plurality of hinge elements. A fastening element is employed to selectively engage the outer two gate panels so that they may be connected together. When in use, the plurality of gate elements rotate about the plurality of hinge elements to form a seven-sided polygon-shaped configuration that is connected together by the fastening element. Typically, a user arranges the fastened barrier device around the fire. The open structure of the gate panels prevents access to the fire by small children or animals while allowing easy viewing and access to the fire by adults. | 2012-05-10 |
20120112149 | APPARATUS AND METHOD RELATING TO FENCING - An apparatus and method for fencing in which a mobile apparatus has a plurality of posts held with wires passing through respective aligned holes and means to take a post at a time to an into the ground driver with the wire or wires still extending through apertures in the post. | 2012-05-10 |
20120112150 | Post Deposition Adjustment of Chalcogenide Composition in Chalcogenide Containing Semiconductors - The concentration of a constituent within a chalcogenide film used to form a chalcogenide containing semiconductor may be adjusted post deposition by reacting the chalcogenide film with a material in contact with the chalcogenide film. For example, a chalcogenide film containing tellurium may be coated with a titanium layer. Upon the application of heat, the titanium may react with the tellurium to a controlled extent to reduce the concentration of tellurium in the chalcogenide film. | 2012-05-10 |
20120112151 | METHODS OF FORMING A CRYSTALLINE Pr1-xCaxMnO3 (PCMO) MATERIAL AND METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES COMPRISING CRYSTALLINE PCMO - A method of forming a crystalline Pr | 2012-05-10 |
20120112152 | ELECTRONICALLY CONTROLLED SQUISHABLE COMPOSITE SWITCH - A method and apparatus for making analog and digital electronics which includes a composite including a squishable material doped with conductive particles. A microelectromechanical systems (MEMS) device has a channel made from the composite, where the channel forms a primary conduction path for the device. Upon applied voltage, capacitive actuators squeeze the composite, causing it to become conductive. The squishable device includes a control electrode, and a composite electrically and mechanically connected to two terminal electrodes. By applying a voltage to the control electrode relative to a first terminal electrode, an electric field is developed between the control electrode and the first terminal electrode. This electric field results in an attractive force between the control electrode and the first terminal electrode, which compresses the composite and enables electric control of the electron conduction from the first terminal electrode through the channel to the second terminal electrode. | 2012-05-10 |
20120112153 | NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a nonvolatile memory device which requires a lower initializing voltage such that the nonvolatile memory device can be operated at a low voltage. The nonvolatile memory device ( | 2012-05-10 |
20120112154 | IN VIA FORMED PHASE CHANGE MEMORY CELL WITH RECESSED PILLAR HEATER - A method for fabricating a phase change memory device including a plurality of in via phase change memory cells includes forming pillar heaters formed of a conductive material along a contact surface of a substrate corresponding to each of an array of conductive contacts to be connected to access circuitry, forming a dielectric layer along exposed areas of the substrate surrounding the pillar heaters, forming an interlevel dielectric (ILD) layer above the dielectric layer, etching a via to the dielectric layer, each via corresponding to each of pillar heater such that an upper surface of each pillar heater is exposed within each via, recessing each pillar heater, depositing phase change material in each via on each recessed pillar heater, recessing the phase change material within each via, and forming a top electrode within the via on the phase change material. | 2012-05-10 |
20120112155 | INTERCONNECTS FOR STACKED NON-VOLATILE MEMORY DEVICE AND METHOD - A method of forming a vertical interconnect for a memory device. The method includes providing a substrate having a surface region and defining a cell region, a first peripheral region, and a second peripheral region. A first thickness of dielectric material is formed overlying the surface region. A first bottom wiring structure spatially configured to extend in a first direction is formed overlying the first dielectric material for a first array of devices. A second thickness of a dielectric material is formed overlying the first wiring structure. The method includes forming an opening region in the first peripheral region. The opening region is configured to extend in a portion of at least the first thickness of dielectric material and the second thickness of dielectric material to expose a portion of the first wiring structure and to expose a portion of the substrate. A second bottom wiring material is formed overlying the second thickness of dielectric material and filling the opening region to form a vertical interconnect structure in the first peripheral region. A second bottom wiring structure is formed from the second wiring material for a second array of devices. The second bottom wiring structure is separated from the first bottom wiring structure by at least the second thickness of dielectric material and spatially configured to extend in the first direction. The first wiring structure and the second wiring structure are electrically connected by the vertical interconnect structure in the first peripheral region to a control circuitry on the substrate. | 2012-05-10 |
20120112156 | Non-Volatile Memory Devices Having Resistance Changeable Elements And Related Systems And Methods - A non-volatile memory device may include a first wordline on a substrate, an insulating layer on the first wordline, and a second wordline on the insulating layer so that the insulating layer is between the first and second wordlines. A bit pillar may extend adjacent the first wordline, the insulating layer, and the second wordline in a direction perpendicular with respect to a surface of the substrate, and the bit pillar may be electrically conductive. In addition, a first memory cell may include a first resistance changeable element electrically coupled between the first wordline and the bit pillar, and a second memory cell may include a second resistance changeable element electrically coupled between the second wordline and the bit pillar. Related methods and systems are also discussed. | 2012-05-10 |
20120112157 | NANOWIRE SENSOR WITH ANGLED SEGMENTS THAT ARE DIFFERENTLY FUNCTIONALIZED - A nanowire device includes a nanowire | 2012-05-10 |
20120112158 | EPITAXIAL SUBSTRATE, SEMICONDUCTOR LIGHT-EMITTING DEVICE USING SUCH EPITAXIAL SUBSTRATE AND FABRICATION THEREOF - The invention provides an epitaxial substrate, a semiconductor light-emitting device using such epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, a crystal surface of the crystalline substrate thereon has a plurality of randomly arranged nanorods. The plurality of nanorods is formed of oxide of a material different from that forms the crystalline substrate. | 2012-05-10 |
20120112159 | NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT - A nitride semiconductor light emitting element includes: an n type nitride semiconductor layer formed on a substrate; a light emitting layer formed on the n type nitride semiconductor layer; and a p type nitride semiconductor layer formed on the light emitting layer. The n type nitride semiconductor layer is constituted by one layer or two or more stacked layers. At least one layer constituting the n type nitride semiconductor layer contains Si and Sn as n type dopants and contains In as an isoelectronic dopant. | 2012-05-10 |
20120112160 | SOLID STATE LIGHT EMITTING DEVICE AND METHOD FOR MAKING THE SAME - A method for making a solid state light emitting device includes: (a) forming a first cladding layer on a substrate; (b) forming a matrix layer above the first cladding layer, the matrix layer having a top surface and being formed with a plurality of isolated spaces; (c) epitaxially forming a quantum cluster in each of the spaces such that the top surface of the matrix layer and top surfaces of the quantum clusters cooperatively define a coplanar surface, the quantum clusters cooperating with the matrix layer to form a light emitting layer; (d) forming a second cladding layer on the light emitting layer; and (e) forming an electrode unit electrically connected to the first and second cladding layers. | 2012-05-10 |
20120112161 | LIGHT EMITTING DEVICE WITH TRENCHES AND A TOP CONTACT - A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A bottom contact disposed on a bottom surface of the semiconductor structure is electrically connected to one of the n-type region and the p-type region. A top contact disposed on a top surface of the semiconductor structure is electrically connected to the other of the n-type region and the p-type region. A mirror is aligned with the top contact. The mirror includes a trench formed in the semiconductor structure and a reflective material disposed in the trench, wherein the trench extends through the light emitting layer. | 2012-05-10 |
20120112162 | NITRIDE BASED LIGHT EMITTING DEVICE - A nitride based light emitting device is disclosed. More particularly, a nitride based light emitting device capable of improving light emitting efficiency and reliability thereof is disclosed. The nitride based light emitting device includes a first conductive semiconductor layer connected to a first electrode, a second conductive semiconductor layer connected to a second electrode, an active layer located between the first conductive semiconductor layer and the second conductive semiconductor layer and having a quantum well structure, a first insertion layer located in at least one of a boundary between the first conductive semiconductor layer and the active layer and a boundary between the second conductive semiconductor layer and the active layer, and a second insertion layer located adjacent to the first insertion. | 2012-05-10 |
20120112163 | LIGHT-EMITTING DIODE DEVICE STRUCTURE WITH SixNy LAYER - A light-emitting diode (LED) structure fabricated with a Si | 2012-05-10 |
20120112164 | FORMATION OF A GRAPHENE LAYER ON A LARGE SUBSTRATE - A single crystalline silicon carbide layer can be grown on a single crystalline sapphire substrate. Subsequently, a graphene layer can be formed by conversion of a surface layer of the single crystalline silicon layer during an anneal at an elevated temperature in an ultrahigh vacuum environment. Alternately, a graphene layer can be deposited on an exposed surface of the single crystalline silicon carbide layer. A graphene layer can also be formed directly on a surface of a sapphire substrate or directly on a surface of a silicon carbide substrate. Still alternately, a graphene layer can be formed on a silicon carbide layer on a semiconductor substrate. The commercial availability of sapphire substrates and semiconductor substrates with a diameter of six inches or more allows formation of a graphene layer on a commercially scalable substrate for low cost manufacturing of devices employing a graphene layer. | 2012-05-10 |
20120112165 | Optical Device - An improved optoelectronic device is described, which employs optically responsive nanoparticles and utilises a non-radiative energy transfer mechanism. The nanoparticles are disposed on the sidewalls of one or more cavities, which extend from the surface of the device through the electronic structure and penetrate the energy transfer region. The nanoparticles are located in close spatial proximity to an energy transfer region, whereby energy is transferred non-radiatively to or from the electronic structure through non-contact dipole-dipole interaction. According to the mode of operation, the device can absorb light energy received from the device surface via the cavity and then transfer this non-radiatively or can transfer energy non-radiatively and then emit light energy towards the surface of the device via the cavity. As such, the deice finds application in light emitting devices, photovoltaic (solar) cells, displays, photodetectors, lasers and single photon devices. | 2012-05-10 |
20120112166 | GRAPHENE BASED SWITCHING DEVICE HAVING A TUNABLE BANDGAP - A method of implementing bandgap tuning of a graphene-based switching device includes subjecting a bi-layer graphene to an electric field while simultaneously subjecting the bi-layer graphene to an applied strain that reduces an interlayer spacing between the bi-layer graphene, thereby creating a bandgap in the bi-layer graphene. | 2012-05-10 |
20120112167 | NANOSCALE ELECTRONIC DEVICE - One example of the present invention is a nanoscale electronic device comprising a first conductive electrode, a second conductive electrode, and an anisotropic dielectric material layered between the first and second electrodes having a permittivity in a direction approximately that of the shortest distance between the first and second electrodes less than the permittivity in other directions within the anisotropic dielectric material. Additional examples of the present invention include integrated circuits that contain multiple nanoscale electronic devices that each includes an anisotropic dielectric material layered between first and second electrodes having a permittivity in a direction approximately that of the shortest distance between the first and second electrodes less than the permittivity in other directions within the anisotropic dielectric material. | 2012-05-10 |
20120112168 | Coherent Quantum Information Transfer Between Topological And Conventional Qubits - Computing bus devices that enable quantum information to be coherently transferred between topological and conventional qubits are disclosed. A concrete realization of such a topological quantum bus acting between a topological qubit in a Majorana wire network and a conventional semiconductor double quantum dot qubit is described, The disclosed device measures the joint (fermion) parity of the two different qubits by using the Aharonov-Casher effect in conjunction. with an ancillary superconducting flux qubit that facilitates the measurement. Such a parity measurement, together with the ability to apply Hadamard gates to the two qubits, allows for the production of states in which the topological and conventional qubits are maximally entangled, and for teleporting quantum states between the topological and conventional quantum systems. | 2012-05-10 |
20120112169 | AROMATIC AMINE DERIVATIVE, AND ORGANIC ELECTROLUMINESCENT ELEMENT COMPRISING SAME - An aromatic amine derivative represented by the following formula (1)
| 2012-05-10 |
20120112170 | CROSS-CONJUGATED POLYMERS FOR ORGANIC ELECTRONIC DEVICES AND RELATED METHODS - Cross-conjugated donor-acceptor polymers, methods for their preparation, devices that include polymers, and methods for the preparation and use of the devices. | 2012-05-10 |
20120112171 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films. | 2012-05-10 |
20120112172 | DISPLAY DEVICE, METHOD OF MANUFACTURING DISPLAY DEVICE, AND ELECTRONIC APPARATUS - Disclosed herein is a display device including a plurality of kinds of pixels that emit color light beams different from each other, the pixels being provided on a substrate, wherein each of the pixels includes an organic stacked film including one or more organic light emitting layers and another kind of organic layer, with the layer structure of another kind of organic layer differing on the basis of each of the kinds of the pixels, and a first electrode and a second electrode which are disposed so that the organic stacked film is interposed therebetween. | 2012-05-10 |
20120112173 | ORGANIC EL DISPLAY DEVICE AND METHOD FOR PRODUCTION OF THE SAME - Disclosed herein is an organic electroluminescence display device including: a substrate; a plurality of lower electrodes formed thereon for each of a plurality of organic electroluminescence elements; a plurality of hole injecting/transporting layers capable of either hole injection or hole transportation which are formed on the lower electrodes for each of the organic electroluminescence elements; a plurality of organic light emitting layers containing a low-molecular weight material which are formed on the hole injecting/transporting layers for each of the organic electroluminescence elements; an electron injecting/transporting layer capable of either electron injection or electron transportation which is formed over the entire surface of the organic light emitting layers; and an upper electrode formed on the electron injecting/transporting layer. | 2012-05-10 |
20120112174 | COMPOUND FOR ORGANIC OPTOELECTRONIC DEVICE, ORGANIC LIGHT EMITTING DIODE INCLUDING THE SAME AND DISPLAY DEVICE INCLUDING THE ORGANIC LIGHT EMITTING DIODE - A compound for an organic optoelectronic device, an organic light emitting diode, and a display device, the compound including moieties represented by the following Chemical Formula 1; Chemical Formula 4; and one of Chemical Formulae 2 and 3; | 2012-05-10 |
20120112175 | PHOTOVOLTAIC DEVICES COMPRISING ION PAIRS - A photovoltaic (PV) device having an electron donor region and electron acceptor region, the donor and acceptor regions comprising conjugated polymers and/or molecular semiconductors, ion pairs being, preferably preferentially, located at, near or towards the interface between the donor and acceptor regions. | 2012-05-10 |
20120112176 | AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT DEVICE USING SAME - Disclosed is an organic electroluminescence device in which an organic thin film which is composed of one or more layers including at least a light-emitting layer is interposed between a cathode and an anode. Since at least one layer of the organic thin film contains a novel aromatic amine derivative, which has an asymmetric structure wherein two different amine units are bonded through a linking group, by itself or as a component of a mixture, molecules are hardly crystallized, thereby improving the production yield of the organic electroluminescence device. This organic electroluminescence device has a long life. | 2012-05-10 |
20120112177 | AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT ELEMENT - An amine derivative represented by the following general formula (1) and exhibiting a temperature difference of 30° C. or more as defined by the difference of [decomposition temperature (° C.) minus sublimation temperature (° C.)]: | 2012-05-10 |
20120112178 | OPTOELECTRONIC DEVICES - An optoelectronic device comprises electon donor D and acceptor A semiconducting species and an intervening co-oligomeric or copolymeric species provided to alter the energy transfer characteristics of excitons to or from the interface between the said electron acceptor and donor species. The intervening species may be of the form A | 2012-05-10 |
20120112179 | FLUORANTHENE COMPOUND AND ORGANIC ELECTROLUMINESCENCE DEVICE USING SAME - A fluoranthene compound represented by the formula (1): | 2012-05-10 |
20120112180 | METAL OXIDE THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - The instant disclosure relates to a metal oxide thin film transistor having a threshold voltage modification layer. The thin film transistor includes a gate electrode, a dielectric layer formed on the gate electrode, an active layer formed on the dielectric layer, a source electrode and a drain electrode disposed separately on the active layer, and a threshold voltage modulation layer formed on the active layer in direct contact with the back channel of the transistor. The threshold voltage modulation layer and the active layer have different work functions so that the threshold voltage modulation layer modulates the threshold voltage of devices and improve the performance of the transistor. | 2012-05-10 |
20120112181 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR INCLUDING THE SAME AND THIN FILM TRANSISTOR DISPLAY PANEL INCLUDING THE SAME - An oxide semiconductor including: (A) at least one element of zinc (Zn) and tin (Sn); and (B) at least one element of arsenic (As), antimony (Sb), chromium (Cr), cerium (Ce), tantalum (Ta), neodymium (Nd), niobium (Nb), scandium (Sc), yttrium (Y), and hafnium (Hf), is provided. | 2012-05-10 |
20120112182 | THIN FILM TRANSISTOR AND A METHOD OF MANUFACTURING THE SAME - Disclosed herein is a method of manufacturing a thin film transistor having a structure that a gate electrode and an oxide semiconductor layer are disposed with a gate insulating film interposed between the gate electrode and the oxide semiconductor layer, and a source/drain electrode is electrically connected to the oxide semiconductor layer, the method including: continuously depositing an aluminum oxide (Al | 2012-05-10 |
20120112183 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device including an oxynitride semiconductor whose carrier density is controlled. By introducing controlled nitrogen into an oxide semiconductor layer, a transistor in which an oxynitride semiconductor having desired carrier density and on characteristics is used for a channel can be manufactured. Further, with the use of the oxynitride semiconductor, even when a low resistance layer or the like is not provided between an oxynitride semiconductor layer and a source electrode and between the oxynitride semiconductor layer and a drain electrode, favorable contact characteristics can be exhibited. | 2012-05-10 |
20120112184 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device having a novel structure or a method for manufacturing the semiconductor device is provided. For example, the reliability of a transistor which is driven at high voltage or large current is improved. For improvement of the reliability of the transistor, a buffer layer is provided between a drain electrode layer (or a source electrode layer) and an oxide semiconductor layer such that the end portion of the buffer layer is beyond the side surface of the drain electrode layer (or the source electrode layer) when seen in a cross section, whereby the buffer layer can relieve the concentration of electric field. The buffer layer is a single layer or a stacked layer including a plurality of layers, and includes, for example, an In—Ga—Zn—O film containing nitrogen, an In—Sn—O film containing nitrogen, an In—Sn—O film containing SiOx, or the like. | 2012-05-10 |
20120112185 | HIGH-PERFORMANCE DIODE DEVICE STRUCTURE AND MATERIALS USED FOR THE SAME - A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material. | 2012-05-10 |
20120112186 | TREATMENT OF GATE DIELECTRIC FOR MAKING HIGH PERFORMANCE METAL OXIDE AND METAL OXYNITRIDE THIN FILM TRANSISTORS - Embodiments of the present invention generally include TFTs and methods for their manufacture. The gate dielectric layer in the TFT may affect the threshold voltage of the TFT. By treating the gate dielectric layer prior to depositing the active channel material, the threshold voltage may be improved. One method of treating the gate dielectric involves exposing the gate dielectric layer to N | 2012-05-10 |
20120112187 | METHOD FOR FORMING METAL OXIDE FILM, METAL OXIDE FILM AND APPARATUS FOR FORMING METAL OXIDE FILM - The present method of forming a metal oxide film can increase production efficiency while maintaining the low resistance of the metal oxide film. The present method of forming a metal oxide film includes first misting a solution containing a metallic element and ethylenediamine; meanwhile, heating a substrate; and then, supplying the misted solution onto a first main surface of the substrate. | 2012-05-10 |
20120112188 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP - A semiconductor light-emitting device which includes: a single-crystal substrate formed with a plurality of projection portions on a c-plane main surface; an intermediate layer which is formed to cover the main surface of the single-crystal substrate, in which a film thickness t | 2012-05-10 |
20120112189 | SPIN INJECTION DEVICE HAVING SEMICONDUCTOR-FERROMAGNETIC-SEMICONDUCTOR STRUCTURE AND SPIN TRANSISTOR - A spin injection device and spin transistor including a spin injection device. A spin injection device includes different semiconductor materials and a spin-polarizing ferromagnetic material there between. The semiconductor materials may have different crystalline structures, e.g., a first material can be polycrystalline or amorphous silicon, and a second material can be single crystalline silicon. Charge carriers are spin-polarized when the traverse the spin-polarizing ferromagnetic material and injected into the second semiconductor material. A Schottky barrier height between the first semiconductor and ferromagnetic materials is larger than a second Schottky barrier height between the ferromagnetic and second semiconductor materials. A spin injection device may be a source of a spin field effect transistor. | 2012-05-10 |
20120112190 | EPITAXIAL SILICON WAFER AND METHOD FOR MANUFACTURING SAME - It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A silicon epitaxial layer is grown by a CVD method on the surface of a silicon crystal substrate into which phosphorus and germanium have been doped at a high concentration. After that, a PBS forming step for growing a polysilicon layer is executed on the rear face side of a silicon crystal substrate. By the above steps, the number of LPDs (caused by an SF) that occur on the surface of the epitaxial silicon wafer due to the SF can be greatly reduced. | 2012-05-10 |
20120112191 | SEMICONDUCTOR DEVICE - A data retention period in a semiconductor device or a semiconductor memory device is lengthened. The semiconductor device or the semiconductor memory includes a memory circuit including a first transistor including a first semiconductor layer and a first gate and a second transistor including a second semiconductor layer, a second gate, and a third gate The first semiconductor layer is formed at the same time as a layer including the second gate. | 2012-05-10 |
20120112192 | POWER STORAGE DEVICE - A semiconductor device comprises a thin film transistor provided over a substrate having an insulating surface, and an electrode penetrating the substrate. The thin film transistor is provided between a first structural body and a second structural body, which has a higher rigidity than the first structural body, which serve as protectors because the structural bodies have resistance to a pressing force such as a tip of a pen or bending stress applied from outside so malfunction due to the pressing force and the bending stress can be prevented. | 2012-05-10 |
20120112193 | TRANSISTOR ARRAY SUBSTRATE - A transistor array substrate includes a substrate, a plurality of scan lines, a plurality of data lines, and a plurality of pixel units. The scan lines, the data lines, and the pixel units are all disposed on the substrate. Each pixel unit includes a first transistor, a second transistor, a first pixel electrode, a second pixel electrode, a first storage capacitor, and a second storage capacitor. The second transistor and the first transistor are electrically connected with the same scan line and the same data line. The second transistor and the first transistor are connected in series. The first pixel electrode is electrically connected with the first transistor, and the second pixel electrode is electrically connected with the second transistor. The first storage capacitor is electrically connected with the first transistor and the second transistor, and the second storage capacitor is electrically connected with the second transistor. | 2012-05-10 |
20120112194 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes. | 2012-05-10 |
20120112195 | ARRAY SUBSTRATE AND MANUFACTURUING METHOD THEREOF, ACTIVE DISPLAY - A manufacturing method for an array substrate comprising: sequentially forming a gate metal film, a gate insulating layer and an active layer film; applying photoresist, and patterning the photoresist; etching the stacked layers corresponding to a photoresist-completely-removed region; ashing to remove the photoresist in a photoresist-partially-remained region and remain a part of photoresist in a photoresist-completely-remained region, etching the gate insulating layer and the active layer film in the photoresist-partially-remained region; forming an insulating layer film; lifting off the photoresist and the insulating layer film thereon; forming a conductive film, and patterning the conductive film to from a source electrode, a drain electrode, a data line, a pixel electrode and an active layer channel. | 2012-05-10 |
20120112196 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - The present invention provides a structure of the TFT in which a current-voltage characteristic can be improved. The present invention refers to a thin film transistor comprising a lamination layer wherein a first conductive film, a first insulating film and a second conductive film are sequentially laminated, a semiconductor film formed so as to be in contact with the side surface of the lamination layer, and a third conductive film covering the semiconductor film through a second insulating film. The first conductive film and the second conductive film are a source electrode and a drain electrode, and a region which is in contact with the first insulating film and the third conductive film is a channel forming region in semiconductor film, and the third conductive film is a gate electrode. | 2012-05-10 |
20120112197 | ACTIVE MATRIX SUBSTRATE AND ACTIVE MATRIX DISPLAY DEVICE - A stem wiring ( | 2012-05-10 |
20120112198 | EPITAXIAL GROWTH OF SILICON CARBIDE ON SAPPHIRE - remove impurities from an exposed surface in the ultrahigh vacuum environment. A high qualify single crystalline or polycrystalline silicon carbide film can be grown directly on the sapphire substrate by chemical vapor deposition employing a silicon-containing reactant and a carbon-containing reactant. Formation of single crystalline silicon carbide has been verified by x-ray diffraction, secondary ion mass spectroscopy, and transmission electron microscopy. | 2012-05-10 |
20120112199 | THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor array panel according to an exemplary embodiment of the present invention floats all data lines during a manufacturing process by forming the data lines DL separate from each other and separate from the data pad connecting lines DLL, and only connecting the lines DL to the corresponding lines DLL after the data lines DL are etched. This reduces etching speed differences between data wires, thereby reducing the problem of differing thicknesses for different data lines DL. Therefore, it is possible to prevent performance deterioration or display quality deterioration of the transistor due to a thickness difference of data wires. | 2012-05-10 |
20120112200 | LIQUID CRYSTAL PANEL AND LIQUID CRYSTAL DISPLAY - A liquid crystal panel, comprising: an array substrate including: a display area, in which pixels disposed, wherein the pixel includes: a switching device; a lower electrode; an insulating layer formed on the lower electrode; an upper electrode, which has a plurality of slits to generate a fringe electric field; and a common signal line; a scanning line; a signal line crossing the scanning line; and a contact hole; and an opposite substrate, wherein one electrode of the upper electrode and the lower electrode is a pixel electrode connected to the switching element, and the other electrode thereof is a common electrode, wherein the signal line is disposed at every two pixels adjacent in a scanning line direction, wherein the contact hole is shared by the adjacent two pixels and is formed at an intervening region of the two adjacent pixels in which the signal line is not provided. | 2012-05-10 |
20120112201 | HIGH MELTING POINT SOLDERING LAYER AND FABRICATION METHOD FOR THE SAME, AND SEMICONDUCTOR DEVICE - A high melting point soldering layer includes a low melting point metal layer, a first high melting point metal layer disposed on a surface of the low melting point metal layer, and a second high melting point metal layer disposed at a back side of the low melting point metal layer. The low melting point metal layer, the first high melting point metal layer, and the second high melting point metal layer are mutually alloyed by transient liquid phase bonding, by annealing not less than a melting temperature of the low melting point metal layer, diffusing the metal of the low melting point metal layer into an alloy of the first high melting point metal layer and the second high melting point metal layer. The high melting point soldering layer has a higher melting point temperature than that of the low melting point metal layer. It is provided a binary based high melting point soldering layer having TLP bonding of a high melting point according to a low temperature processing, a fabrication method for the high melting point soldering layer and a semiconductor device to which the high melting point soldering layer is applied. | 2012-05-10 |
20120112202 | E-Mode High Electron Mobility Transistors And Methods Of Manufacturing The Same - An Enhancement-mode (E-mode) high electron mobility transistor (HEMT) includes a channel layer with a 2-Dimensional Electron Gas (2DEG), a barrier layer inducing the 2DEG in the channel layer, source and drain electrodes on the barrier layer, a depletion layer on the barrier layer between the source and drain electrodes, and a gate electrode on the depletion layer. The barrier layer is recessed below the gate electrode and the depletion layer covers a surface of the recess and extends onto the barrier layer around the recess. | 2012-05-10 |
20120112203 | GROUP-III NITRIDE SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR DEVICE, AND EPITAXIAL SUBSTRATE - Provided is a Group III nitride semiconductor device, which comprises an electrically conductive substrate including a primary surface comprised of a first gallium nitride based semiconductor, and a Group III nitride semiconductor region including a first p-type gallium nitride based semiconductor layer and provided on the primary surface. The primary surface of the substrate is inclined at an angle in the range of not less than 50 degrees, and less than 130 degrees from a plane perpendicular to a reference axis extending along the c-axis of the first gallium nitride based semiconductor, an oxygen concentration Noxg of the first p-type gallium nitride based semiconductor layer is not more than 5×10 | 2012-05-10 |
20120112204 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND EPITAXIAL SUBSTRATE - For a nitride semiconductor light emitting device, a c-axis vector of hexagonal GaN of a support substrate is inclined to an X-axis direction with respect to a normal axis Nx normal to a primary surface. In a semiconductor region an active layer, a first gallium nitride-based semiconductor layer, an electron block layer, and a second gallium nitride-based semiconductor layer are arranged along the normal axis on the primary surface of the support substrate. A p-type cladding layer is comprised of AlGaN, and the electron block layer is comprised of AlGaN. The electron block layer is subject to tensile strain in the X-axis direction. The first gallium nitride-based semiconductor layer is subject to compressive strain in the X-axis direction. The misfit dislocation density at an interface is smaller than that at an interface. A barrier to electrons at the interface is raised by piezoelectric polarization. | 2012-05-10 |
20120112205 | SEMICONDUCTOR STRUCTURES AND DEVICES INCLUDING SEMICONDUCTOR MATERIAL ON A NON-GLASSY BONDING LAYER - Methods of fabricating semiconductor structures and devices include bonding a seed structure to a substrate using a glass. The seed structure may comprise a crystal of semiconductor material. Thermal treatment of the seed structure bonded to the substrate using the glass may be utilized to control a strain state within the seed structure. The seed structure may be placed in a state of compressive strain at room temperature. The seed structure bonded to the substrate using the glass may be used for growth of semiconductor material, or, in additional methods, a seed structure may be bonded to a first substrate using a glass, thermally treated to control a strain state within the seed structure and a second substrate may be bonded to an opposite side of the seed structure using a non-glassy material. | 2012-05-10 |
20120112206 | ASYMMETRIC HETERO-STRUCTURE FET AND METHOD OF MANUFACTURE - An asymmetric hetero-structure FET and method of manufacture is provided. The structure includes a semiconductor substrate and an epitaxially grown semiconductor layer on the semiconductor substrate. The epitaxially grown semiconductor layer includes an alloy having a band structure and thickness that confines inversion carriers in a channel region, and a thicker portion extending deeper into the semiconductor structure at a doped edge to avoid confinement of the inversion carriers at the doped edge. | 2012-05-10 |
20120112207 | METHOD TO REDUCE GROUND-PLANE POISONING OF EXTREMELY-THIN SOI (ETSOI) LAYER WITH THIN BURIED OXIDE - The present disclosure, which is directed to ultra-thin-body-and-BOX and Double BOX fully depleted SOI devices having an epitaxial diffusion-retarding semiconductor layer that slows dopant diffusion into the SOI channel, and a method of making these devices. Dopant concentrations in the SOI channels of the devices of the present disclosure having an epitaxial diffusion-retarding semiconductor layer between the substrate and SOI channel are approximately 50 times less than the dopant concentrations measured in SOI channels of devices without the epitaxial diffusion-retarding semiconductor layer. | 2012-05-10 |
20120112208 | STRESSED TRANSISTOR WITH IMPROVED METASTABILITY - An embedded, strained epitaxial semiconductor material, i.e., an embedded stressor element, is formed at the footprint of at least one pre-fabricated field effect transistor that includes at least a patterned gate stack, a source region and a drain region. As a result, the metastability of the embedded, strained epitaxial semiconductor material is preserved and implant and anneal based relaxation mechanisms are avoided since the implants and anneals are performed prior to forming the embedded, strained epitaxial semiconductor material. | 2012-05-10 |
20120112209 | SILICON CARBIDE SUBSTRATE FABRICATION METHOD, SEMICONDUCTOR DEVICE FABRICATION METHOD, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method of fabricating a silicon carbide substrate that can reduce the fabrication cost of a semiconductor device employing the silicon carbide substrate includes the steps of: preparing a SiC substrate made of single crystal silicon carbide; arranging a base substrate in a vessel so as to face one main face of the SiC substrate; forming a base layer made of silicon carbide so as to contact one main face of the SiC substrate by heating a base substrate to a temperature range greater than or equal to a sublimation temperature of silicon carbide constituting the base substrate. In the step of forming a base layer, a silicon generation source made of a substance including silicon is arranged in the vessel, in addition to the SiC substrate and the base substrate. | 2012-05-10 |
20120112210 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device includes a substrate and a plurality of pixel rows. The pixel rows are arranged on the substrate. Each of the pixel rows includes a first sub-pixel row having a plurality of first sub-pixels, a second sub-pixel row having a plurality of second sub-pixels, and a third sub-pixel row having a plurality of third sub-pixels. In the m | 2012-05-10 |
20120112211 | SILICONE RESIN, SEALING MATERIAL, AND OPTICAL SEMICONDUCTOR DEVICE - A silicone resin is obtained by allowing a cage octasilsesquioxane having a group represented by formula (1) below, to react with
| 2012-05-10 |
20120112212 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light emitting diode (OLED) display is disclosed. In one embodiment, the OLED display includes first and second substrates, an OLED interposed between the first and second substrates and an external sealant formed between the first and second substrates and configured to i) substantially seal the first and second substrates and ii) substantially surround the OLED. The OLED display may further include a dam formed between the external sealant and the OLED and configured to substantially surround the OLED, and a getter formed between the external sealant and the dam. | 2012-05-10 |
20120112213 | DISPLAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME - A display substrate includes a substrate, a gate line formed on the substrate, a data line formed on the substrate and crossing the gate line, a first pixel electrode formed on the substrate on which the gate and the data line are formed, an insulation layer formed on the substrate and the first pixel electrode, and a second pixel electrode formed on the insulation layer. The second pixel electrode includes a first sub-electrode that overlaps the first pixel electrode and the data line, and a second sub-electrode that is electrically connected to the data line through a switching element. | 2012-05-10 |
20120112214 | ACTIVE DEVICE ARRAY SUBSTRATE - An active device array substrate is provided. First, a substrate having a display area and a sensing area is provided. Then, a first patterned conductor layer is disposed on the display area of the substrate. A gate insulator is disposed on the substrate. A patterned semiconductor layer, a second patterned conductor layer and a patterned photosensitive dielectric layer are disposed on the gate insulator, wherein the second patterned conductor layer includes a source electrode, a drain electrode and a lower electrode, the patterned photosensitive dielectric layer covering the second patterned conductor layer includes an interface protection layer disposed on the source electrode and the drain electrode and a photo-sensing layer disposed on the lower electrode. A passivation layer is then disposed on the substrate. After that, a third patterned conductor layer including a pixel electrode and an upper electrode is disposed on the passivation layer. | 2012-05-10 |