18th week of 2021 patent applcation highlights part 74 |
Patent application number | Title | Published |
20210134852 | THIN FILM TRANSISTOR, DISPLAY SUBSTRATE, METHOD FOR PREPARING THE SAME, AND DISPLAY DEVICE - The present disclosure provides a thin film transistor, a display substrate, a method for preparing the same, and a display device including the display substrate. The method for preparing the thin film transistor includes: forming an inorganic insulating film layer in contact with an electrode of the thin film transistor by a plasma enhanced chemical vapor deposition process at power of 9 kW to 25 kW, at a temperature of 190° C. to 380° C. and by using a mixture of gases N | 2021-05-06 |
20210134853 | METHOD FOR MANUFACTURING DISPLAY DEVICE - A method for manufacturing a display device is disclosed, the method at least includes the following step: Firstly, a temporary substrate is provided, a hydrogen containing structure is formed on the temporary substrate, a polymer film is formed on the hydrogen containing structure, and a display element is formed on the polymer film. Afterwards, a laser beam process is performed, to focus a laser beam on the hydrogen containing structure, and the temporary substrate is then removed. | 2021-05-06 |
20210134854 | Systems and methods for modulated image capture - Disclosed is a pixel element comprising a semiconductor substrate, a primary charge-collection node, a peripheral node, a modulating node, a circuitry and a backside conductive layer. The semi-conductor substrate is configured to convert a flux of photons to first and second conductivity-type mobile charges. The peripheral node at least partially surrounds the primary charge-collection node, which at least partially surrounds the modulating node. The circuitry is used to connect and disconnect a reset voltage to/from the primary charge-collection node, provide a peripheral node voltage to the peripheral node, and measure an amount of the first conductivity-type mobile charges collected by the primary charge- collection node. The modulating node is electrically connected to a modulating voltage source, which is independent of the peripheral node voltage. The backside conductive layer is configured to collect and conduct the second conductivity-type mobile charges, and configured to be electrically connected to a bias voltage. | 2021-05-06 |
20210134855 | PIXEL WITH ENHANCED DRAIN - Some embodiments relate to an integrated circuit, comprising: a pixel, comprising: a photodetection region; and a drain configured to discard charge carriers from within a semiconductor region of the pixel outside of the photodetection region. Some embodiments relate to an integrated circuit, comprising: a pixel, comprising: a photodetection region; and a drain configured to discard charge carriers from the photodetection region, wherein the drain comprises a semiconductor region and the semiconductor region is contacted by a metal contact. Some embodiments relate to an integrated circuit, comprising: a pixel, comprising: a photodetection region; and a drain configured to discard charge carriers from the photodetection region, wherein the drain comprises a semiconductor region that to which electrical contact is made through a conductive path that does not include a polysilicon electrode. | 2021-05-06 |
20210134856 | IMAGING ELEMENT, FABRICATION METHOD, AND ELECTRONIC EQUIPMENT - The present disclosure relates to an imaging element, a fabrication method, and electronic equipment by which an image having higher picture quality can be imaged. The imaging element includes a first light absorbing film formed in an effective pixel peripheral region, the effective pixel peripheral region being provided so as to enclose an outer side of an effective pixel region in which a plurality of pixels is disposed in a matrix, so as to cover a semiconductor substrate, a microlens layer provided as an upper layer than the first light absorbing film and having a microlens formed so as to condense light for each of the pixels in the effective pixel region, and a second light absorbing film provided as an upper layer than the microlens layer and formed in the effective pixel peripheral region. The present technology can be applied, for example, to a CMOS image sensor. | 2021-05-06 |
20210134857 | OPTICAL PACKAGE - An optical package includes a substrate, an image sensor, a microlens, an optical filter layer, a constraining layer, and a buffer layer. The image sensor is disposed on the substrate. The microlens having a first Young's modulus is disposed on the image sensor. The optical filter layer having a second Young's modulus disposed on the microlens. The constraining layer is disposed between the optical filter layer and the microlens. The buffer layer having a third Young's modulus disposed on the constraining layer. The third Young's modulus is greater than the first Young's modulus and smaller than the second Young's modulus. | 2021-05-06 |
20210134858 | IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING IMAGE PICKUP ELEMENT, AND ELECTRONIC APPARATUS - An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in the semiconductor substrate; and a fixed charge film provided on a light-receiving surface side of the semiconductor substrate, wherein the fixed charge film includes a first insulating film and a second insulating film, the first insulating film being provided contiguously from the light-receiving surface to a wall surface and a bottom surface of the pixel separation groove, and the second insulating film being provided on a part of the first insulating film, the part corresponding to at least the light-receiving surface. | 2021-05-06 |
20210134859 | LIGHT RECEIVING ELEMENT, RANGING MODULE, AND ELECTRONIC APPARATUS - Disclosed is a light receiving element including an on-chip lens, a wiring layer, and a semiconductor layer disposed between the on-chip lens and the wiring layer. The semiconductor layer includes a photodiode, a first transfer transistor that transfers electric charge generated in the photodiode to a first charge storage portion, a second transfer transistor that transfers electric charge generated in the photodiode to a second charge storage portion, and an interpixel separation portion that separates the semiconductor layers of adjacent pixels from each other, for at least part of the semiconductor layer in the depth direction. The wiring layer has at least one layer including a light blocking member. The light blocking member is disposed to overlap with the photodiode in a plan view. | 2021-05-06 |
20210134860 | IMAGING DEVICE AND ELECTRONIC DEVICE - An imaging device capable of image processing is provided. | 2021-05-06 |
20210134861 | SOLID-STATE IMAGING APPARATUS HAVING OUTPUT CIRCUIT UNIT FOR OUTPUTTING A PIXEL SIGNAL - The present disclosure relates to reducing the size of a solid-state imaging apparatus. The solid-state imaging apparatus is configured by laminating a first structure body, comprising a pixel array unit in which pixels for performing photoelectric conversion are two-dimensionally aligned, and a second structure body, comprising an output circuit unit for outputting a pixel signal. The output circuit unit, including a through via which penetrates a semiconductor substrate constituting a part of the second structure body, and a signal output external terminal connected to the outside of the apparatus are arranged under the first structure body, the output circuit unit is connected to the signal output external terminal via the through via, and the outermost surface of the apparatus is a resin layer formed on an upper layer of an on-chip lens of the pixel array unit. | 2021-05-06 |
20210134862 | LIGHT DETECTION DEVICE - A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each having a light receiving region, the avalanche photodiodes being arranged in a matrix at the semiconductor substrate, and a plurality of through-electrodes electrically connected to corresponding light receiving regions. The plurality of through-electrodes are arranged for each area surrounded by four mutually adjacent avalanche photodiodes of the plurality of avalanche photodiodes. Each of the light receiving regions has, when viewed from a direction perpendicular to a first principal surface of the semiconductor substrate, a polygonal shape including a pair of first sides opposing each other in a row direction and extending in a column direction and four second side opposing four through-electrodes surrounding the light receiving region and extending in directions intersecting with the row direction and the column direction. The length of the first side is shorter than the length of the second side. | 2021-05-06 |
20210134863 | SOLID-STATE IMAGING ELEMENT AND ELECTRONIC EQUIPMENT - The present technology relates to a solid-state imaging element and electronic equipment that allow an increase in the signal charge amount Qs that each pixel can accumulate. A solid-state imaging element according to the first aspect of the present technology includes: a photoelectric conversion section formed in each pixel; and an inter-pixel separation section separating the photoelectric conversion section of each pixel, in which the inter-pixel separation section includes a protruding section having a shape protruding toward the photoelectric conversion section. The present technology can be applied to a back-illuminated CMOS image sensor, for example. | 2021-05-06 |
20210134864 | MANUFACTURING METHOD OF IMAGE SENSOR - A manufacturing method of an image sensor including the following steps is provided. A substrate is provided. A light sensing device is formed in the substrate. A storage node is formed in the substrate. The storage node and the light sensing device are separated from each other. A buried gate structure is formed in the substrate. The buried gate structure includes a buried gate and a first dielectric layer. The buried gate is disposed in the substrate and covers at least a portion of the storage node. The first dielectric layer is disposed between the buried gate and the substrate. A first light shielding layer is formed on the buried gate. The first light shielding layer is located above the storage node and electrically connected to the buried gate. | 2021-05-06 |
20210134865 | IMAGE SENSOR - An image sensor includes a pixel array including first pixels and second pixels, each of the first and second pixels including photodiodes, a sampling circuit detecting a reset voltage and a pixel voltage from the first and second pixels and generating an analog signal, an analog-to-digital converter image data from the analog signal, and a signal processing circuit generating an image using the image data. Each of the first pixels includes a first conductivity-type well separating the photodiodes and having impurities of a first conductivity-type. The photodiodes have impurities of a second conductivity-type different from the first conductivity-type. Each of the second pixels includes a second conductivity-type well separating the photodiodes and having impurities of the second conductivity-type different from the first conductivity-type. A potential level of the second conductivity-type well is higher than a potential level of the first conductivity-type well. | 2021-05-06 |
20210134866 | DISPLAY APPARATUS - A display apparatus includes a first substrate, a plurality of pixel structures disposed on the first substrate, a light sensor disposed on the first substrate, an insulation layer disposed on the light sensor, a first light shielding pattern, a second substrate disposed opposite to the first substrate, a second light shielding pattern, and a display medium. Each pixel structure includes an active device and a pixel electrode electrically connected to the active device. The first light shielding pattern is disposed on the insulation layer and located above the light sensor. The second light shielding pattern is disposed on the second substrate and has an opening. The opening of the second light shielding pattern and the first light shielding pattern define at least one slit, and the at least one slit and the light sensor are partially overlapped. The display medium is disposed between the first substrate and the second substrate. | 2021-05-06 |
20210134867 | IMAGE SENSOR - An image sensor includes a substrate having a first surface and a second surface opposite to each other, a photoelectric conversion region provided in the substrate, and a polarizer provided at the first surface of the substrate. The polarizer includes a lower structure comprising at least one trench recessed from the first surface of the substrate toward the photoelectric conversion region, and a plurality of upper patterns provided on the lower structure and spaced apart from each other in a first direction parallel to the first surface. | 2021-05-06 |
20210134868 | STACKED LENS STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE - The present technology relates to, in a stacked lens structure formed by stacking wafer substrates, the stacked lens structure that enables implementation of a diaphragm function and a method of manufacturing the same, and an electronic device. In the stacked lens structure, substrates with lens each having a lens resin portion disposed inside a through hole formed in a substrate are directly bonded and stacked. The stacked lens structure includes a black resin having a transmittance distribution monotonously decreasing from a lens center toward a peripheral portion on an upper surface or a lower surface of the lens resin portion of at least one of the substrates with lens. The present technology can be applied to, for example, a camera module in which a plurality of lenses is stacked and the like. | 2021-05-06 |
20210134869 | IMAGE SENSOR - An image sensor includes a substrate having a first surface, a charge storage portion disposed in the substrate, a light-blocking pattern disposed on the first surface overlapping the charge storage portion, and a low-refractive index pattern on the light-blocking pattern. | 2021-05-06 |
20210134870 | LENS ARRAY, IMAGING DEVICE, AND METHOD OF MANUFACTURING LENS ARRAY - A lens array includes a plurality of lens parts arranged on a curved surface in a two-dimensional array. Each of the plurality of lens parts includes: a base part provided with a tapered side surface having an outer diameter that becomes smaller in a height direction away from the curved surface; and an apex part located on the base part and having a lens surface. There is an angular difference Δθ between height directions of two adjacent lens parts of the plurality of lens parts. The angular difference Δθ is smaller than an amount double a taper angle θ of the side surface of each of the two adjacent lens parts. | 2021-05-06 |
20210134871 | SENSOR DEVICE - A sensor device including an interposer including a first via and a lower pad, the lower pad being on a bottom surface of the interposer; an image sensor chip on a top surface of the interposer, the image sensor chip including a logic chip and a sensing chip on the logic chip, the logic chip including first wiring patterns and a second via, and the sensing chip including second wiring patterns; a conductive structure penetrating a portion of the logic chip and the sensing chip, the conductive structure being connected to at least one of the first wiring patterns and at least one of the second wiring patterns; and a passivation layer on an inner surface of the conductive structure, wherein a side surface of the interposer is coplanar with a side surface of the image sensor chip. | 2021-05-06 |
20210134872 | IMAGE SENSOR AND OPERATING METHOD - An image sensor includes unit pixels of a first pixel group sharing a first floating diffusion region and associated with a single color filter, and unit pixels of a second pixel group sharing a second floating diffusion region and associated with the single color filter. Control logic may generate an image by obtaining capacitance having a first value from the first floating diffusion region at a first time, and obtaining capacitance having a second value different from the first value from the second floating diffusion region at a second time following the first time. The first pixel group and the second pixel s group have different sensitivity levels. | 2021-05-06 |
20210134873 | MEMORY DEVICE, MEMORY SYSTEM AND AUTONOMOUS DRIVING APPARATUS - An image sensor includes a first layer including pixels in a pixel array, and a first logic circuit configured to control the pixel array. Each of the pixels include at least one photodiode configured to generate a charge in response to light, and a pixel circuit configured to generate a pixel signal corresponding to the charge. A second layer includes a second logic circuit that is connected to the pixel array and the first logic circuit and is on the first layer. A third layer includes storage elements that are electrically connected to at least one of the pixels or the first logic circuit and an insulating layer on the storage elements. A lower surface of the insulating layer is attached to an upper portion of the first layer, and an upper surface of the insulating layer is attached to a lower portion of the second layer. | 2021-05-06 |
20210134874 | IMAGE SENSING DEVICE AND METHOD FOR FORMING THE SAME - An image sensing device and a method for forming the same are disclosed. The image sensing device includes a first substrate, first photoelectric conversion elements formed in the first substrate and configured to generate photocharges in response to a reception of light, a second substrate formed over the first substrate, and second photoelectric conversion elements formed in the second substrate and configured to generate photocharges in response to a reception of light, the second photoelectric conversion elements contacting corresponding the first photoelectric conversion elements, respectively. | 2021-05-06 |
20210134875 | LENS STRUCTURE CONFIGURED TO INCREASE QUANTUM EFFICIENCY OF IMAGE SENSOR - Various embodiments of the present disclosure are directed towards an image sensor having a substrate including a plurality of sidewalls that define a plurality of protrusions along a first side of the substrate. The substrate has a first index of refraction. A photodetector is disposed within the substrate and underlying the plurality of protrusions. A plurality of micro-lenses overlying the first side of the substrate. The micro-lenses have a second index of refraction that is less than the first index of refraction. The micro-lenses are respectively disposed laterally between and directly contact an adjacent pair of protrusions in the plurality of protrusions. Further, the micro-lenses respectively comprise a convex upper surface. | 2021-05-06 |
20210134876 | DISPLAY APPARATUS - A display apparatus includes light-emitting elements configured to emit light in a screen, a louver fixed on the screen with a fastener, and a member disposed on a surface of the louver around the fastener and configured to reflect, in multiple directions, external light incident to a portion around the fastener or absorb the external light. | 2021-05-06 |
20210134877 | DISPLAY PANEL AND DISPLAY DEVICE INCLUDING THE SAME - A display panel includes a base layer having a display area and a non-display area including a pad area; a plurality of transistors on the base layer; a first protective layer covering the plurality of transistors; a conductive layer on the first protective layer; a second protective layer over the conductive layer; a first electrode and a second electrode on the second protective layer, the first and second electrodes being spaced from each other; a plurality of light emitting elements between the first electrode and the second electrode; a first contact electrode on the first electrode, the first contact electrode being in contact with one end portion of the light emitting element, and a second contact electrode on the second electrode, the second contact electrode being in contact with the other end portion of the at least one light emitting element; and a first pad in the pad area. | 2021-05-06 |
20210134878 | System and Method for Making Micro LED Display - By using chip-by-chip, mainly separation technology, micro LED can be made very accurately and efficiently. First, after epitaxial process, the LED epi-wafer is processed into micro LEDs. Second, bonding substrates with driving circuits are provided for the LED epi-wafer. Then, each LED chip is fastened to the substrate chip-by-chip simultaneously or sequentially, and each LED chip may be transferred by using separation technology simultaneously or sequentially. The LED epi-wafer per se can be also provided as LED display substrate. | 2021-05-06 |
20210134879 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device is provided. The semiconductor device includes a substrate having a chamber. The semiconductor device also includes a first dielectric layer disposed on the substrate. The semiconductor device further includes a pair of thermocouples disposed on the first dielectric layer. The semiconductor device includes a second dielectric layer disposed on the first dielectric layer and between the thermocouples. The semiconductor device also includes an absorber connected to the thermocouples. | 2021-05-06 |
20210134880 | SYSTEM AND METHOD FOR NON-INVASIVE LARGE-SCALE QUBIT DEVICE CHARACTERIZATION TECHNIQUE - According to an embodiment of the present invention, a system for non-invasively characterizing a qubit device includes a characterization probe chip. The characterization probe chip includes a substrate and a characterization resonator formed on a first surface of the substrate. The characterization resonator includes a superconducting stripline, and a superconducting antenna coupled to an end of the superconducting stripline, the superconducting antenna positioned to align with a qubit on the qubit device being characterized. The characterization probe chip also includes and a superconducting ground plane formed on a second surface of the substrate, the second surface opposing the first surface. In operation, the superconducting antenna is configured to capacitively couple the characterization resonator to the qubit aligned with the superconducting antenna for characterization of the qubit. | 2021-05-06 |
20210134881 | MEMORY CELLS WITH VERTICALLY OVERLAPPING WORDLINES - One illustrative device includes an array of memory cells including a first row of memory cells and a second row of memory cells adjacent the first row, a first gate structure extending along the first row, a second gate structure extending along the second row, a first wordline positioned in a first layer above the array and contacting the first gate structure, and a second wordline positioned in a second layer above the first layer and contacting the second gate structure, wherein the second wordline vertically overlaps the first wordline. | 2021-05-06 |
20210134882 | SEMICONDUCTOR MRAM DEVICE AND METHOD - A method includes depositing a first dielectric layer over a semiconductor substrate, depositing a first electrode layer over the first dielectric layer, etching the first electrode layer to form a first electrode and a second electrode laterally separated from the first electrode, depositing a Spin Orbit Torque (SOT) material on the first electrode and the second electrode, depositing Magnetic Tunnel Junction (MTJ) layers on the SOT material, depositing a second electrode layer on the MTJ layers, etching the SOT material to form a SOT layer extending from the first electrode to the second electrode, etching the MTJ layers to form an MTJ stack on the SOT layer, and etching the second electrode layer to form a top electrode on the MTJ stack. | 2021-05-06 |
20210134883 | EMBEDDING MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY DEVICES BETWEEN METAL LEVELS - A semiconductor device structure includes a metallization stack that has one or more patterned metal layers in a logic area and a memory area. At least one memory device is disposed above the metallization stack. A first level logic metal layer is coupled to a patterned metal layer of the one or more patterned metal layers in the logic area. A first level memory metal layer is formed above the first level logic metal layer and is coupled to a top electrode of the memory device stack. A distance between the one or more patterned metal layers in the logic area and the first level logic metal layer is smaller than the distance between the one or more patterned metal layers in the memory area and the first level memory metal layer. | 2021-05-06 |
20210134884 | SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device including first conductive lines, second conductive lines crossing the first conductive lines, and memory cells at intersections between the first conductive lines and the second conductive lines. Each of the memory cells includes a magnetic tunnel junction pattern, a bi-directional switching pattern connected in series to the magnetic tunnel junction pattern, and a conductive pattern between the magnetic tunnel junction pattern and the bi-directional switching pattern. | 2021-05-06 |
20210134885 | THREE DIMENSIONAL MEMORY ARRAY - The present disclosure includes three dimensional memory arrays, and methods of processing the same. A number of embodiments include a plurality of conductive lines separated from one other by an insulation material, a plurality of conductive extensions arranged to extend substantially perpendicular to the plurality of conductive lines, and a storage element material formed around each respective one of the plurality of conductive extensions and having two different contacts with each respective one of the plurality of conductive lines, wherein the two different contacts with each respective one of the plurality of conductive lines are at two different ends of that respective conductive line. | 2021-05-06 |
20210134886 | OPTICAL SENSOR AND THIN FILM PHOTODIODE - An aspect comprising an optical sensor is disclosed. The optical sensor comprises stacked layers comprising: a window layer configured to allow the passage of photons; a sensing layer configured to generate charges upon impinging of the photons through the window layer; and a bottom electrode layer comprising at least one bottom electrode for receiving charges generated in the sensing layer. The sensing layer is sandwiched between the window layer and the bottom electrode layer. The at least one bottom electrode of the bottom electrode layer comprises conductive material with reflectivity higher than 0.7 to reflect back received photons into the sensing layer; and the at least one bottom electrode is obtained by semiconductor device fabrication techniques. | 2021-05-06 |
20210134887 | IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT, IMAGING APPARATUS AND ELECTRONIC APPARATUS - There is provided an imaging device including an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. Further, there is provided an electronic apparatus including an imaging device that includes an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. | 2021-05-06 |
20210134888 | DISPLAY PANEL, METHOD FOR FABRICATING THE SAME, AND DISPLAY DEVICE - The disclosure provides a display panel, a method for fabricating the same, and a display device. The display panel includes a plurality of pixel elements distributed in an array, each of which includes a plurality of sub-pixel elements, wherein there is a photon crystal film layer arranged on a light exit side of the pixel elements in the display panel, and the photon crystal film layer includes photon crystal areas corresponding to the respective sub-pixel elements in a one-to-one manner; and there are a plurality of micro-holes structures arranged uniformly in each photon crystal area, and apertures of the micro-hole structures in the respective photon crystal areas match colors of light to be displayed at the sub-pixel elements corresponding to the photon crystal areas. | 2021-05-06 |
20210134889 | DISPLAY PANEL AND DISPLAY DEVICE - A display panel includes a display region that includes a normal display region and a transparent display region. The normal display region and the transparent display region are connected. The transparent display region includes multiple transparent areas and multiple pixels. The transparent areas have the same shape. For two adjacent transparent areas, a shape of one transparent area has a different placement angle than a shape of another transparent area. | 2021-05-06 |
20210134890 | LIGHT-EMITTING DEVICE, DISPLAY AND COLOR CONVERSION SUBSTRATE - A light-emitting device is described that includes a plurality of partially drivable light sources, and a color conversion component configured to convert at least part of incident light from at least part of the light sources and emit outgoing light falling in a different wavelength region from the incident light, where the color conversion component includes a pyrromethene derivative. | 2021-05-06 |
20210134891 | DISPLAY APPARATUS HAVING A LIGHT-EMITTING DEVICE - A display apparatus including two lines is provided. The two lines may extend in a first direction. A light-emitting device may be disposed between the two lines. Each line may be bent or extended in the direction of the device substrate which supports the light-emitting device. Thus, in the display apparatus, mixing of light emitted to the outside through the device substrate may be prevented. Therefore, in the display apparatus, the quality of realized image may be improved. | 2021-05-06 |
20210134892 | DISPLAY PANEL OF AN ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING A PENTILE PIXEL STRUCTURE - A display panel may include a first OLED disposed in a first sub-pixel region and emitting light of a first color, a second OLED disposed in a second sub-pixel region and emitting light of a second color, a third OLED disposed in a third sub-pixel region and emitting light of a third color, a fourth OLED disposed in a fourth sub-pixel region and emitting light of the second color, a first sub-pixel circuit disposed in the first sub-pixel region and driving the third OLED in the third sub-pixel region, a second sub-pixel circuit disposed in the second sub-pixel region and driving the first OLED in the first sub-pixel region, a third sub-pixel circuit disposed in the third sub-pixel region and driving the fourth OLED in the fourth sub-pixel region, and a fourth sub-pixel circuit disposed in the fourth sub-pixel region and driving the second OLED in the second sub-pixel region. | 2021-05-06 |
20210134893 | DISPLAY PANEL AND DISPLAY DEVICE COMPRISING THE SAME - The present disclosure relates to display panels and display devices including the display panels, and more for example, to a display panel with excellent luminance and a display device including the display panel, by including an insulating film having an inclined portion with a high-inclined portion. | 2021-05-06 |
20210134894 | DISPLAY SUBSTRATE, MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS - A display substrate includes a substrate, a pixel-defining layer configured to define a plurality of sub-pixel regions, and a plurality of sub-pixels having at least two colors, each arranged within each of the plurality of sub-pixel regions. The pixel-defining layer and the plurality of sub-pixels are disposed over the substrate. The pixel-defining layer includes a plurality of first pixel-defining portions and a plurality of second pixel-defining portions. Each of the plurality of first pixel-defining portions is configured to separate neighboring sub-pixels of different colors. Each of the plurality of second pixel-defining portions is configured to separate neighboring sub-pixels of the same color. At least one of the plurality of second pixel-defining portions has a smaller width than any one of the plurality of first pixel-defining portions. | 2021-05-06 |
20210134895 | Light Emitting Device and Method for Manufacturing The Same, and Display Device - The present disclosure provides a light emitting device and a method for manufacturing the same, and a display device. The light emitting device includes a plurality of light emitting units including a red light emitting unit, a green light emitting unit, and a blue light emitting unit, each light emitting unit including a micro-cavity structure. The light emitting device includes an anode structure, a cathode and a functional layer therebetween. The functional layer includes a light emitting layer including a red light emitting layer at least partially located in the red light emitting unit, an orthographic projection of the red light emitting layer on the backplane not overlapping with that of the blue light emitting unit on the backplane; a green light emitting layer at least partially located in the green light emitting unit; and a blue light emitting layer at least partially located in the blue light emitting unit. | 2021-05-06 |
20210134896 | DISPLAY PANEL AND DISPLAY APPARATUS - A display panel includes a sub-pixel array and a plurality of photosensitive units. The sub-pixel array includes as first sub-pixel, a second sub-pixel and a third sub-pixel that are capable of emitting light of different colors. The plurality of photosensitive units are disposed under a light-emitting surface of the sub-pixel array. Each of the plurality of photosensitive units includes a photosensitive device, and the photosensitive device includes a photosensitive layer; and an orthographic projection of the photosensitive layer in the photosensitive device on a panel surface of the display panel has overlapping regions with orthographic projections of the first sub-pixel, the second sub-pixel and the third sub-pixel on the panel surface of the display panel. | 2021-05-06 |
20210134897 | DISPLAY DEVICE - An embodiment provides a display device including: a display panel including a display area and a peripheral area disposed outside the display area; and a flexible film attached to a first side surface of the display panel, wherein the display panel may include a signal line extending from the display area, a signal pad connected to the signal line, and a dummy pad disposed parallel to the signal pad, and the flexible film may include a base film disposed to face the first side surface, and a driving electrode disposed between the base film and the signal pad. | 2021-05-06 |
20210134898 | ARRAY SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE - Disclosed are an array substrate, a method for manufacturing the same, and a display device. The array substrate includes a base substrate and an organic light-emitting diode (OLED), a photoelectric conversion layer and a light-filtering layer which are on the base substrate, wherein the OLED and the light-filtering layer both are on a side, distal from the base substrate, of the photoelectric conversion layer, an orthographic projection of the photoelectric conversion layer on the base substrate is at least partially overlapped with an orthographic projection of the light-filtering layer on the base substrate, the orthographic projection of the photoelectric conversion layer on the base substrate is outside an orthographic projection of the OLED on the base substrate, the light-filtering layer is light transmittable, and a transmittance of the light-filtering layer to light in a target band is smaller than or equal to a transmittance thresholds. | 2021-05-06 |
20210134899 | DISPLAY PANEL, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE - A display panel, a manufacturing method thereof, and a display device. The display panel includes a first display region and a second display region. The display panel further includes a base substrate, a driving circuit layer, a light emitting functional film layer and a conductive layer, which are located in the first display region and the second display region. The driving circuit layer is disposed on the base substrate; the light emitting functional film layer is disposed on the driving circuit layer; and the conductive layer is disposed on the light emitting functional film layer. A thickness of a portion of the conductive layer located in the first display region is less than a thickness of a portion of the conductive layer located in the second display region. | 2021-05-06 |
20210134900 | LIGHT EMITTING SUBSTRATE AND MANUFACTURING METHOD THEREOF, ELECTRONIC DEVICE - A light emitting substrate and a manufacturing method thereof, and an electronic device are provided, the method includes: forming a pixel definition layer by a patterning process using a first mask, in which the pixel definition layer includes an opening and a partition portion defining the opening; forming a first electrode, in which the first electrode includes a first portion covering at least a part of the partition portion and includes a second portion in the opening; and forming an auxiliary electrode by a patterning process using the first mask, in which the auxiliary electrode is electrically connected with the first electrode, and the auxiliary electrode is on the partition portion. | 2021-05-06 |
20210134901 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - To provide a display device having a reduced non-display area, the display device including: a substrate including a display area, the display area including a first area and a second area; a first pixel electrode in the first area, and a second pixel electrode in the second area; a pixel-defining layer on the substrate and including a first opening and a second opening, the first opening exposing at least a portion of the first pixel electrode, and the second opening exposing at least a portion of the second pixel electrode; a first intermediate layer on the at least a portion of the first pixel electrode, and a second intermediate layer on the at least a portion of the second pixel electrode; a first opposite electrode on the first intermediate layer; and a second opposite electrode on the first opposite electrode and the second intermediate layer. | 2021-05-06 |
20210134902 | DISPLAY DEVICE - A display device includes a metal layer between a pixel-defining layer and an opposite electrode, the metal layer contacting the opposite electrode. The display device includes subpixels disposed on a substrate. The sub-pixels each include a pixel electrode, an opposite electrode facing the pixel electrode, an emission layer disposed between the pixel electrode and the opposite electrode, a pixel-defining layer surrounding the emission layer. The display device includes a metal layer disposed between the pixel-defining layer and the opposite electrode, the metal layer contacting the opposite electrode. | 2021-05-06 |
20210134903 | DISPLAY SUBSTRATE AND DISPLAY PANEL - The pixel substrate and a pixel panel are provided. The display substrate includes: a display structure layer, a cover plate on the display structure layer and a plurality of pixel definition layers and an anti-light crosstalk layer between the display structure layer and the cover plate, where the pixel definition layers are arranged on a lower surface of the cover plate at intervals and are in a one-to-one correspondence to sub-pixel units of the display substrate, the anti-light crosstalk layer surrounds each pixel definition layer, where a reflective component is between the anti-light crosstalk layer and the display structure layer, the reflective component includes an inclined surface configured to reflect light from the display structure layer to the pixel definition layer. | 2021-05-06 |
20210134904 | DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE - Provided is a display panel and a method for manufacturing the same, and a display device. The display panel includes a display area and a peripheral area including a first and a second peripheral area. The peripheral area includes a substrate, a first planarization layer and a first dam located above the substrate, the first dam including a corner portion and a straight portion located at the first and second peripheral area respectively. An edge of an orthographic projection of the first planarization layer on the substrate away from the display area is a first edge, an edge of an orthographic projection of the first dam on the substrate close to the display area is a second edge; in the first and second peripheral area, a minimum distance between the first edge and the second edge is a first and a second distance greater than the first distance respectively. | 2021-05-06 |
20210134905 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND DISPLAY PANEL - A display substrate includes a base, and a gate metal layer, a source-drain metal layer, and a planarization layer that are all disposed above the base. The planarization layer is disposed at a side of the gate metal layer away from the base, and the source-drain metal layer is disposed between the gate metal layer and the planarization layer. The gate metal layer includes gate electrodes, and the source-drain metal layer includes source electrodes and drain electrodes. One of the gate electrodes, a respective one of the source electrodes, and a respective one of the drain electrodes are used to form a thin film transistor. The display substrate further includes auxiliary patterns disposed on surfaces of the source electrodes and the drain electrodes facing away from the base, the auxiliary patterns are in contact with the planarization layer, and a material of the auxiliary patterns includes at least one oleophobic material. | 2021-05-06 |
20210134906 | DISPLAY APPARATUS - A display apparatus includes first and second subpixel electrodes on a planarization layer including first and second via holes. The first subpixel includes a first pixel definition layer including a first opening exposing a portion of a first pixel electrode corresponding to a first emission portion. The first pixel electrode is connected to a first pixel circuit through the first via hole. The second subpixel includes a second pixel definition layer including a second opening exposing a portion of a second pixel electrode corresponding to a second emission portion. The second pixel electrode is connected to a second pixel circuit through the second via hole. A second distance defined as a shortest distance from an inner surface of the second opening to the second via hole is greater than a first distance defined as a shortest distance from an inner surface of the first opening to the first via hole. | 2021-05-06 |
20210134907 | DISPLAY DEVICE - A display device includes a first display area and a second display area adjacent to the first display area in a first direction, driving elements, light-emitting elements including a pixel electrode electrically connected to a corresponding one of the driving elements, signal wirings that transfer a driving signal to the driving elements, and connection wirings that transfer a driving signal to signal wirings disposed in the second display area. At least one of the connection wirings includes a first signal-transferring portion extending in the first direction, a second signal-transferring portion extending in a second direction, and dummy portions extending in a direction intersecting the first and second signal-transferring portions. The pixel electrode overlaps a gap between dummy portions of adjacent connection wirings in an area where the connection wirings are disposed. | 2021-05-06 |
20210134908 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor array substrate having a pixel arrangement structure includes a first sub-pixel for displaying a first color and a second sub-pixel for displaying a second color alternately located in a first column, and a third sub-pixel for displaying a third color in a second column adjacent to the first column, and via holes of the first through third sub-pixels in a same row are at different positions. | 2021-05-06 |
20210134909 | ARRAY SUBSTRATE, DISPLAY SCREEN AND DISPLAY DEVICE - An array substrate, a display screen and a display device. The array substrate includes a base substrate, a non-transparent first OLED substrate, and a transparent second OLED substrate. The first OLED substrate at least partially surrounds the second OLED substrate. The second OLED substrate includes a first electrode layer located on the base substrate, a light emitting structure layer located on the first electrode layer, and a second electrode layer located on the light emitting structure layer. The first electrode layer includes a plurality of first electrodes. The light emitting structure layer includes a plurality of light emitting structures. A number of the first electrodes is less than a number of the light emitting structures. Each of the first electrodes corresponds to one of the light emitting structures. | 2021-05-06 |
20210134910 | DISPLAY PANEL, DISPLAY APPARATUS, AND METHOD OF FABRICATING THE DISPLAY PANEL - A display panel is provided. The display panel includes a base substrate; a first conductive layer on the base substrate, and in an encapsulated area and a peripheral area of the display panel; a second conductive layer on a side of the first conductive layer away from the base substrate, and in the encapsulated area and the peripheral area; an organic insulating layer between the first conductive layer and the second conductive layer, and limited in the encapsulated area; a first inorganic insulating layer between the first conductive layer and the second conductive layer, and on a side of the organic insulating layer away from the base substrate; and a second inorganic insulating layer between the organic insulating layer and the first conductive layer. The first inorganic insulating layer covers the organic insulating layer. | 2021-05-06 |
20210134911 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device includes: a base substrate including an opening area, an opening peripheral area, and a display area at least partially surrounding the opening peripheral area, wherein the opening peripheral area is a non-display area at least partially surrounding the opening area; a thin film transistor disposed on the base substrate in the display area; a via insulating layer disposed on the thin film transistor and having a first opening surrounding the opening area, wherein the first opening is in the opening peripheral area; a pixel defining layer disposed on the via insulating layer and having a first opening which overlaps the first opening of the via insulating layer; a transparent filler disposed on the base substrate in the opening area; and a sealing substrate disposed on the transparent filler. | 2021-05-06 |
20210134912 | Display Device - Provided is a display device. The display device includes a base layer including an active area partitioned to display images and an inactive area adjacent to the active area, an opening located in a part of the active area and passing through the base layer and functional layers thereabove, and a cut structure located in the vicinity of the opening and provided to cut the connection of an organic light emitting layer between the opening and a light emitting unit. A camera may be provided in a position corresponding to the opening. | 2021-05-06 |
20210134913 | METHOD OF MANUFACTURING DISPLAY PANEL AND DISPLAY APPARATUS INCLUDING THE DISPLAY PANEL - A method of manufacturing a display panel includes providing an insulating substrate that includes a hole area, a display area that surrounds the hole area, and a peripheral area adjacent to the display area, forming a semiconductor pattern in the display area, forming an insulating layer, forming contact holes in the insulating layer that expose portions of the semiconductor pattern, and forming a module hole by etching a portion of the insulating layer and a portion of the insulating substrate that overlap the hole area. | 2021-05-06 |
20210134914 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus includes a transistor on a substrate. The transistor includes a gate electrode, a first electrode, and a second electrode. The apparatus also includes a protective layer over the first electrode and including a first portion that contacts the second electrode, and an organic light-emitting device having a pixel electrode electrically connected to the second electrode. | 2021-05-06 |
20210134915 | DISPLAY PANEL AND FABRICATION METHOD, AND DISPLAY DEVICE - A display panel and fabrication method, and a display device are provided. The display panel includes a base substrate, a first transistor and a storage capacitor. The storage capacitor includes a first electrode and a second electrode, and the first electrode and a gate of the first transistor have an overlapped region. The display panel also includes a first insulating layer having a plurality of first vias in the overlapped region, and the first electrode is electrically connected to the gate of the first transistor through the plurality of first vias. A plurality of grooves are formed on a side of the first electrode facing away from the base substrate. A plurality of protrusions are formed on a side of the second electrode facing toward the base substrate. A groove, a protrusion and a first via overlap in a direction perpendicular to the surface of the base substrate. | 2021-05-06 |
20210134916 | DISPLAY APPARATUS - A display apparatus includes a thin film transistor on the substrate, the thin film transistor including a first semiconductor layer and a first gate electrode overlapping the first semiconductor layer wherein a first gate insulating layer is disposed between the first semiconductor layer and the first gate electrode, and a storage capacitor including a lower electrode including a first lower layer and a first upper layer stacked each other and an upper electrode including a second lower layer and a second upper layer stacked each other, wherein the upper electrode overlaps the lower electrode, and a second gate insulating layer is disposed between the upper electrode and the lower electrode, a display element electrically connected to the thin film transistor, wherein the second upper layer has a thickness greater than a thickness of the first upper layer. | 2021-05-06 |
20210134917 | DISPLAY PANEL AND DISPLAY APPARATUS - Provided are a display panel and a display apparatus. The display panel includes a driving array layer having functional layers and insulation layers. The driving array layer includes a first transistor, a second transistor, a first capacitor including a first plate and a second plate, and a second capacitor including a third plate and a fourth plate. An active layer of the first transistor contains silicon, and an active layer of the second transistor contains oxide semiconductor. The first plate and the second plate are located in two of the functional layers, respectively, and the third plate and the fourth plate are located in two of the functional layers, respectively. | 2021-05-06 |
20210134918 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device may include a first active pattern disposed on a substrate and including a first region, a second region, and a third region; a first gate electrode disposed on the first active pattern and forming a first transistor together with the first region and the second region; a second gate electrode disposed on the first active pattern and forming a second transistor together with the second region and the third region; a third gate electrode disposed on the first gate electrode, overlapping the second region, and forming a storage capacitor together with the first gate electrode; a metal pattern disposed between the first active pattern and the third gate electrode and overlapping the second region; and an organic light emitting diode electrically connected to the first transistor, the second transistor, and the storage capacitor. | 2021-05-06 |
20210134919 | DISPLAY DEVICE AND ARRAY SUBSTRATE - A display device according to an embodiment of the present invention includes: a substrate, a plurality of pixels on the substrate, a first inorganic insulating layer that covers the plurality of pixels, a conductive layer on the first inorganic insulating layer, and a second inorganic insulating layer that on the conductive layer, the conductive layer being between the first inorganic insulating layer and the second inorganic insulating layer, wherein the first inorganic insulating layer includes an area that is in direct contact with the second inorganic insulating layer, and all of the conductive layer is covered with the first inorganic insulating layer and the second inorganic insulating layer. | 2021-05-06 |
20210134920 | DISPLAY PANEL, DISPLAY DEVICE, INPUT/OUTPUT DEVICE, AND DATA PROCESSING DEVICE - A novel display panel that is highly convenient or reliable is provided. A novel display device is provided. The display panel includes a display region, a first terminal region, and a second terminal region, and the first terminal region is provided not to block the display region and includes a region overlapping with the display region. The first terminal region includes a first group of terminals, and the first group of terminals includes a first terminal. The second terminal region includes a second group of terminals, and the second group of terminals includes a second terminal. The display region includes one group of pixels, another group of pixels, a scan line, and a signal line. The one group of pixels includes a pixel and is arranged in a row direction. The another group of pixels includes the pixel and is arranged in a column direction intersecting the row direction. The scan line is electrically connected to the one group of pixels. The signal line is electrically connected to the another group of pixels, and the signal line is electrically connected to the first terminal and the second terminal. | 2021-05-06 |
20210134921 | DISPLAY PANEL, FABRICATION AND DRIVING METHOD THEREOF, AND DISPLAY DEVICE - The present disclosure proposes a display panel, a fabrication method, a driving method thereof, and a display device. The display panel comprises a display area comprising a plurality of OLEDs; a peripheral area located in the periphery of the display area and having a driving circuit configured to provide driving signals to the plurality of OLEDs; a packaging material disposed between the display area and the peripheral area; a first signal line passing through the packaging material to provide a first signal from the driving circuit to the plurality of OLEDs; a second signal line passing through the packaging material to provide a second signal from the driving circuit to the plurality of OLEDs; and a sacrificial line being configured adjacent to the first signal line and the second signal line, where the sacrificial line is connected to a voltage supply element. | 2021-05-06 |
20210134922 | METHOD OF MANUFACTURING FLEXIBLE DISPLAY - A method of manufacturing flexible display is disclosed. The method includes the steps of: providing a substrate, wherein the substrate includes a display area and a bending area; forming an inorganic layer on the substrate; etching the inorganic layer of the bending area of the substrate, and replacing the inorganic layer with a first organic layer; forming a metal wiring layer on the first organic layer; patterning the metal wiring layer; and forming a second organic layer on the metal wiring layer. By utilizing the method of manufacturing flexible display, the risk of metal wiring peeling and cracking during the bending process of the flexible display is reduced. | 2021-05-06 |
20210134923 | DISPLAY DEVICE - A display device includes a substrate which includes a display area and a non-display area, a transistor disposed in the display area, a pad disposed in the non-display area, and an insulating layer which is disposed on the transistor and defines an opening which overlaps the pad in a plan view. The pad includes a main layer, a first auxiliary layer on the main layer, and a second auxiliary layer on the first auxiliary layer, and the second auxiliary layer defines the opening. | 2021-05-06 |
20210134924 | DISPLAY PANEL - A display panel includes a base layer, a circuit layer, a light emitting element, a pixel defining film, an encapsulation layer, and a first dam. The base layer may include a display area and a non-display area adjacent to the display area. The encapsulation layer may include a first inorganic film, an organic film, and a second inorganic film. The first dam may be disposed between the first inorganic film and the second inorganic film, and outside the organic film. The first dam may overlap the non-display area and the pixel defining film on a plane. Therefore, in the display panel of an embodiment, the non-display area may be reduced. | 2021-05-06 |
20210134925 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE - An organic light emitting diode display device includes a substrate, a pixel structure, a first circuit transistor, a first lower electrode, a first upper electrode, and a planarization layer. The substrate has a display area and a peripheral area including a first circuit area, a second circuit area, and a blocking area positioned between the first and second circuit areas. The pixel structure is in the display area on the substrate. The first circuit transistor is in the first circuit area on the substrate. The first lower electrode is in the blocking area on the substrate. The first upper electrode is on the first lower electrode, and the first upper electrode and the first lower electrode constitute a first capacitor. The planarization layer is on the substrate, and has a first opening that overlaps the first capacitor in the blocking area. | 2021-05-06 |
20210134926 | DISPLAY DEVICE - Present disclosure relates to display devices. In according to embodiments of the present disclosure, in a structure in which a sub-pixel in accordance with embodiments of the present disclosures a light emitting portion including a light emitting element, and the like, and a transmissive portion not including the light emitting element, and the like, is disposed, it is possible to prevent a slit with a constant width between sub-pixel lines from being formed by enabling a ratio of transmissive area between sub-pixel lines to be formed irregularly through a location adjustment of the transmissive portion in the sub-pixel. Accordingly, while an area of a transmissive portion included in each sub-pixel is maintained constantly, a diffraction phenomenon caused by a transmissive area formed between sub-pixel lines can be prevented, and the sharpness of images represented by transparent display devices can be improved. | 2021-05-06 |
20210134927 | DISPLAY APPARATUS AND ELECTRONIC APPARATUS INCLUDING THE SAME - A display apparatus includes a base substrate including an opening area which transmits light, an opening peripheral area which is a non-display area surrounding the opening area, and a display area surrounding the opening peripheral area, a thin film transistor disposed on the base substrate, a light emitting structure electrically connected to the thin film transistor, and a loop-type antenna electrode disposed on the base substrate in the opening peripheral area to surround the opening area. | 2021-05-06 |
20210134928 | DISPLAY APPARATUS - A display apparatus includes a first power supply voltage line in a non-display area and including a first conductive layer, a first organic layer on the first conductive layer, and a second conductive layer on the first organic layer, a second power supply voltage line in the non-display area and including a third conductive layer spaced apart from the first conductive layer, and a fourth conductive layer on the first organic layer which is on the third conductive layer, a first dam portion adjacent to the first power supply voltage line, a second dam portion adjacent to the first dam portion, and a third dam portion between the first power supply voltage line and the first dam portion. The fourth conductive layer includes an opening exposing an upper surface of the first organic layer between the first power supply voltage line and the second dam portion. | 2021-05-06 |
20210134929 | ADHESIVE MEMBER AND DISPLAY DEVICE INCLUDING THE SAME - A display device includes a display substrate including a plurality of first pads arranged in a first pad area and a plurality of second pads arranged in a second pad area, wherein the first pads and the second pads are arranged in different rows from each other, a circuit board including first circuit pads facing the first pads, respectively, and second circuit pads facing the second pads, respectively, and an adhesive member disposed between the display substrate and the circuit board and including an adhesive layer and a plurality of conductive balls distributed in the adhesive layer. Here, a first density of first conductive balls overlapping the first pad area among the conductive balls is greater that a second density of second conductive balls overlapping the second pad area among the conductive balls. | 2021-05-06 |
20210134930 | DISPLAY DEVICE - A frame region includes a first routed wire extending from one of a plurality of scan signal lines, one of a plurality of light-emission control lines, or one of a plurality of data signal lines. The first routed wire is electrically connected to drive circuits. The first routed wire is included in a first metal layer. A first conductive film is included in a second metal layer. The first routed wire and the first conductive film overlap each other via an inorganic insulating film. | 2021-05-06 |
20210134931 | FLEXIBLE DISPLAY DEVICE - A flexible display device according to an exemplary embodiment of the present disclosure may include a substrate divided into a display area and a non-display area; a first buffer layer disposed on the substrate; a second buffer layer disposed under the substrate; a support member disposed under the second buffer layer; a transistor and a light emitting element disposed above the first buffer layer in the display area; a conductive layer disposed in the second buffer layer in the non-display area; and a connection member disposed on the first buffer layer in the non-display area and electrically connected to the conductive layer through a contact hole, so that an effect of minimizing luminance unevenness of a display panel due to the use of a polyimide (PI) substrate by grounding and removing charges accumulated in the PI substrate, can be provided. | 2021-05-06 |
20210134932 | DISPLAY PANEL AND DISPLAY DEVICE INCLUDING THE SAME - A display panel includes: a substrate including a component area, and a display area surrounding the component area, the component area including a first area, and a second area surrounding the first area; a plurality of first display elements at the display area; a plurality of pixel groups spaced from each other in an island shape at the first area, each of the plurality of pixel groups including a plurality of second display elements; a plurality of transmission areas adjacent to the plurality of pixel groups at the first area; and a plurality of first wirings extending in a first direction and electrically connected to the plurality of first display elements, the plurality of first wirings detouring around the first area at the second area. | 2021-05-06 |
20210134933 | DISPLAY DEVICE - A display device includes a substrate having a pixel area and a peripheral area, a plurality of pixels disposed on the substrate in the pixel area, a plurality of data lines that supply a plurality of data signals to the pixels, a plurality of scan lines that supply a plurality of scan signals to the pixels, a plurality of power supply lines that supply a first voltage to the pixels, and first through third insulating layers. The first insulating layer is disposed on the substrate, the second insulating layer is disposed on the first insulating layer, and the third insulating layer is disposed on the second insulating layer. The scan lines are disposed below the third insulating layer on the substrate in the pixel area, and are disposed on the third insulating layer in the peripheral area. | 2021-05-06 |
20210134934 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device including: a substrate; an active layer, and including channel and conductive regions; a first conductive layer including a driving gate electrode and a scan line in a first direction; a second conductive layer including a storage line; a third conductive layer including a first connecting member above the storage line; an insulating layer between the storage line and the first connecting member; and a data line and a driving voltage line crossing the scan line in a second direction, wherein the first connecting member electrically connects the driving gate electrode and a conductive region, the driving voltage line overlaps the first connecting member, the insulating layer includes first and second sub-insulating layers, and an edge of the second sub-insulating layer substantially overlaps an edge of the first connecting member in a thickness direction of the display device. | 2021-05-06 |
20210134935 | DISPLAY DEVICE - A display device includes a display region including a plurality of first regions, and a plurality of second regions arranged with a certain gap between the plurality of first regions, wherein each of the plurality of first regions includes a transistor, a first organic layer, a wiring, a first organic insulating layer on the wiring and the transistor, a display element on the first organic insulating layer, a first sealing layer on the display element and stacked in order with a first inorganic insulating layer, a second organic insulating layer and a second inorganic insulating layer, each of the plurality of second regions includes the wiring, a second organic layer on the wiring, a second sealing layer stacked in order with the first inorganic insulating layer and the second inorganic insulating layer, and a thickness of the second organic layer is smaller than the thickness of the first organic layer. | 2021-05-06 |
20210134936 | DISPLAY, DISPLAY PANEL, AND ELECTRONIC TERMINAL - A display and a display panel are provided. An additional VDD wire is arranged in an irregular-shaped region. The VDD wire is connected to a pixel arranged in the irregular-shaped region through a plurality of connection wires, such that the display may have a narrow side edge, and at the same time, a difference between impedances of the irregular-shaped region and a regular-shaped display region may not be large, and a display region may not be split. | 2021-05-06 |
20210134937 | DISPLAY PANEL - A display panel includes a substrate including a first area and a second area that are spaced apart from each other in a first direction; a plurality of display elements located in a display area, the display area being adjacent to the first area and the second area; and a plurality of lines extending in a second direction that intersects the first direction, the plurality of lines being electrically respectively connected to the plurality of display elements, wherein the plurality of lines include: a first line and a second line adjacent to each other and bypassing along an edge of the first area; and a third line and a fourth line adjacent to each other and bypassing along an edge of the second area, wherein the first area and the second area are different from each other in at least one of size or shape. | 2021-05-06 |
20210134938 | TRANSPARENT DISPLAY PANEL AND TRANSPARENT DISPLAY DEVICE INCLUDING THE SAME - A transparent display panel and a transparent display device including the same are disclosed. In a transparent display panel, a VSS voltage line does not surround an outer periphery of a display region. Rather, upper and lower VSS voltage lines respectively disposed on upper and lower sides to the display region are electrically connected to each other via at least one VSS voltage connection line extending across the display region. Thus, left and right non-transparent and thick VSS voltage lines disposed on the left and right sides to the display region may be omitted. Thus, a transparent region of the transparent display panel and a bezel of a transparent display device may be increased or maximized or the bezel thereof may be made slim. | 2021-05-06 |
20210134939 | IC WITH MATCHED THIN FILM RESISTORS - A method of fabricating an integrated circuit (IC) includes forming a dielectric layer on a substrate having a plurality of the IC. A thin-film resistor (TFR) layer is deposited on the dielectric layer, and an underlayer (UL) including carbon is formed on the TFR layer. A hard mask layer including silicon is formed on the UL. Masked etching of the hard mask layer transfers a pattern of a photoresist layer onto the hard mask layer to form a hard mask layer pattern. Masked etching of the UL transfers the hard mask layer pattern onto the UL to form a UL pattern. Masked etching of the TFR layer transfers the UL pattern onto the TFR layer to form a TFR layer pattern including a matched pair of TFRs. The matched pair of TFRs are generally included in circuitry configured together for implementing at least one function. | 2021-05-06 |
20210134940 | RING STRUCTURE FOR FILM RESISTOR - Various embodiments of the present disclosure are directed towards an integrated chip including a resistor structure. A resistive layer overlies a substrate. The resistor structure overlies the substrate. The resistor structure includes a resistor segment of the resistive layer and conductive via structures overlying the resistor segment. A ring structure encloses the resistor structure. The ring structure extends continuously from a first point above the conductive structures to a second point below a bottom surface of the resistive layer. | 2021-05-06 |
20210134941 | SINGLE CRYSTAL MATERIAL AND METHOD OF FORMING THE SAME AND STACKED STRUCTURE AND CERAMIC ELECTRONIC COMPONENT AND DEVICE - A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device. | 2021-05-06 |
20210134942 | INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE - An integrated circuit semiconductor device includes a plurality of cylindrical structures separated from each other on a substrate; and a plurality of supporters having an opening region exposing side surfaces of the plurality of cylindrical structures, the plurality of supporters being in contact with the side surfaces of the plurality of cylindrical structures and supporting the plurality of cylindrical structures, wherein each of the plurality of supporters has both side surfaces having slopes and has a top width that is less than a bottom width. | 2021-05-06 |
20210134943 | APPARATUS FOR CONTROLLING DRIVER CURRENT FOR ILLUMINATION SOURCE - A single photon avalanche diode based range detecting apparatus includes a reference array of single photon avalanche diodes configured to receive light from an illumination source via an internally coupled path. A return array of single photon avalanche diodes is configured to receive light from the illumination source via an external free space path. A calibration pulse generator is configured to generate a calibration signal pulse. Readout circuitry is configured to receive an output of the reference array via a reference signal path, an output of the return array via a return signal path, and an output of the calibration pulse generator via a calibration signal path. The readout circuitry is configured to determine a delay difference value between the reference signal path and the return signal path based on the output of the calibration pulse generator via the calibration signal path. | 2021-05-06 |
20210134944 | INCREASING DEVICE DENSITY AND REDUCING CROSS-TALK SPACER STRUCTURES - In some embodiments, the present disclosure relates to an integrated chip including a first transistor and a second transistor arranged over a substrate. The first transistor includes first and second source/drain regions over the substrate and includes a first channel structure directly between the first and second source/drain regions. A first gate electrode is arranged over the first channel structure and is between first and second air spacer structures. The second transistor includes third and fourth source/drain regions over the substrate and includes a second channel structure directly between the third and fourth source/drain regions. A second gate electrode is arranged over the second channel structure and is between third and fourth air spacer structures. The integrated chip further includes a high-k dielectric spacer structure over a low-k dielectric fin structure between the first and second channel structures to separate the first and second gate electrodes. | 2021-05-06 |
20210134945 | ISOLATION STRUCTURES OF SEMICONDUCTOR DEVICES - The structure of a semiconductor device with isolation structures between FET devices and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming a fin structure on a substrate and forming polysilicon gate structures with a first threshold voltage on first fin portions of the fin structure. The method further includes forming doped fin regions with dopants of a first type conductivity on second fin portions of the fin structure, doping at least one of the polysilicon gate structures with dopants of a second type conductivity to adjust the first threshold voltage to a greater second threshold voltage, and replacing at least two of the polysilicon gate structures adjacent to the at least one of the polysilicon gate structures with metal gate structures having a third threshold voltage less than the first and second threshold voltages | 2021-05-06 |
20210134946 | SEMICONDUCTOR STRUCTURE HAVING AIR GAP DIELECTRIC - The present disclosure provides a semiconductor structure having an air gap dielectric and a method for preparing the semiconductor structure. The semiconductor structure includes a substrate; a plurality of conductive pillars disposed over the substrate; a plurality of dielectric pillars, disposed over the substrate, separated from the conductive pillars; a plurality of dielectric caps disposed over the conductive pillars, separated from the dielectric pillars; and a sealing layer disposed over the dielectric pillars and the dielectric caps. | 2021-05-06 |
20210134947 | SEMICONDUCTOR DEVICE - A semiconductor device, including: a first OD strip, a first doping region, a second OD strip, a second doping region, and a third doping region. The first OD strip extending in a first direction is disposed on the first OD strip, and includes a first-type dopant to define an active region of a first MOS. The second OD strip extending in the first direction and immediately adjacent to the first OD strip in a second direction, wherein the second direction is orthogonal with the first direction. The second doping region is disposed on the second OD strip, and includes a second-type dopant to define an active region of a second MOS. The third doping region is disposed on the second OD strip, and includes the second-type dopant and is configured to be a body terminal of the first MOS. | 2021-05-06 |
20210134948 | CIRCUIT STRUCTURE AND METHOD FOR REDUCING ELECTRONIC NOISES - In an embodiment, an integrated circuit (IC) device comprises a semiconductor substrate, an isolation region and an active region disposed on the semiconductor substrate, a gate stack disposed over the active region, and a source and a drain disposed in the active region and interposed by the gate stack in a first direction. The active region is at least partially surrounded by the isolation region. A middle portion of the active region laterally extends beyond the gate stack in a second direction that is perpendicular to the first direction. | 2021-05-06 |
20210134949 | NANOSHEET STRUCTURES HAVING VERTICALLY ORIENTED AND HORIZONTALLY STACKED NANOSHEETS - A nanosheet semiconductor structure and method for forming the same, where the nanosheet semiconductor structure includes a substrate and a nanosheet stack comprising vertically oriented nanosheets. A gate structure contacts and wraps around the vertically oriented nanosheets. A source layer and a drain layer are each disposed adjacent to the nanosheet stack. An inner spacer is disposed in contact with a bottom surface of the nanosheet stack. The method includes forming an alternating pattern of first spacers and second spacers on a semiconductor stack. The first spacers and one or more underlying portions of the semiconductor stack are removed thereby forming a plurality of trenches each adjacent to one or more of the second spacers. The plurality of trenches defines a plurality of vertically oriented nanosheets. A plurality of sacrificial spacers are formed each in contact with one or more vertically oriented nanosheets of the plurality of vertically oriented nanosheets. | 2021-05-06 |
20210134950 | TUNING THRESHOLD VOLTAGE IN NANOSHEET TRANSITOR DEVICES - In some embodiments, the present disclosure relates to an integrated chip that includes a first nanosheet field effect transistor (NSFET). The first NSFET includes a first nanosheet channel structure arranged over a substrate, a second nanosheet channel structure arranged directly over the first nanosheet channel structure, and a first gate electrode structure. The first and second nanosheet channel structures extend in parallel between first and second source/drain regions. The first gate electrode structure includes a first conductive ring and a second conductive ring that completely surround outer sidewalls of the first nanosheet channel structure and the second nanosheet channel structure, respectively, and that comprise a first material. The first gate electrode structure also includes a passivation layer that completely surrounds the first and second conductive rings, is arranged directly between the first and second nanosheet channel structures, and comprises a second material different than the first material. | 2021-05-06 |
20210134951 | GATE STRUCTURES FOR SEMICONDUCTOR DEVICES - A semiconductor device with different gate structure configurations and a method of fabricating the same are disclosed. The semiconductor device includes first and second pair of source/drain regions disposed on a substrate, first and second nanostructured channel regions, and first and second gate structures with effective work function values different from each other. The first and second gate structures include first and second high-K gate dielectric layers, first and second barrier metal layers with thicknesses different from each, first and second work function metal (WFM) oxide layers with thicknesses substantially equal to each other disposed on the first and second barrier metal layers, respectively, a first dipole layer disposed between the first WFM oxide layer and the first barrier metal layer, and a second dipole layer disposed between the second WFM oxide layer and the second barrier metal layer. | 2021-05-06 |