| 18th week of 2016 patent applcation highlights part 64 |
| Patent application number | Title | Published |
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| 20160126403 | OPTICAL MODULE PACKAGE AND ITS PACKAGING METHOD - An optical module package includes a substrate having a recessed portion, a cover covered on the substrate and defining with the substrate a first chamber and a second chamber therebetween, the cover having a light-emitting hole disposed in communication with the first chamber, a light-receiving hole disposed in communication with the second chamber and a stop wall positioned in the recessed portion to separate the first chamber and the second chamber, a light-emitting chip and a light-receiving chip mounted at the substrate and respectively disposed in the first chamber and the second chamber, and two encapsulation colloids respectively mounted in the first chamber and the second chamber and respectively wrapped about the light-emitting chip and the light-receiving chip. Thus, the optical module package not only can prevent crosstalk but also can greatly reduce the manufacturing cost and the level of difficulty. | 2016-05-05 |
| 20160126404 | GRAPHENE-BASED MULTI-JUNCTIONS FLEXIBLE SOLAR CELL - This disclosure relates to structures for the conversion of light into energy. More specifically, the disclosure describes devices for conversion of light to electricity using photovoltaic cells comprising graphene. | 2016-05-05 |
| 20160126405 | MIS-IL SILICON SOLAR CELL WITH PASSIVATION LAYER TO INDUCE SURFACE INVERSION - The present invention relates generally to a photovoltaic solar cell device and more particularly, to a structure and method of inducing charge inversion in a silicon substrate by using a highly charged passivation layer on an upper side of the silicon substrate. A positively charged passivation layer comprising hafnium oxide may be formed on an insulating layer covering an upper surface of a p-doped silicon substrate and on a metal contact to induce a strong inversion layer in an upper portion of the p-doped silicon substrate. | 2016-05-05 |
| 20160126406 | SOLAR CELL, SOLAR CELL MODULE, METHOD FOR MANUFACTURING SOLAR CELL, AND METHOD FOR MANUFACTURING SOLAR CELL MODULE - An electrode layer formation step of forming an electrode layer including the first electrode and a removal-target body on a first main surface side of a photoelectric conversion part; an insulating layer formation step of forming an insulating layer so as to cover at least the removal-target body; an opening formation step of forming an opening in the insulating layer by utilizing the removal-target body; and a metal layer formation step of forming a metal layer on the electrode layer through the opening of the insulating layer by a plating method are performed in this order. In the opening formation step, at least a part of the removal-target body is removed by irradiation by a laser beam, so that the opening of the insulating layer is formed. | 2016-05-05 |
| 20160126407 | SEMI-TRANSPARENT THIN-FILM PHOTOVOLTAIC MONO CELL - The invention relates to a photovoltaic mono cell that is semi-transparent to light, comprising a plurality of active photovoltaic zones that are separated by transparent zones, said active photovoltaic zones being formed from a stack of thin films arranged on a substrate that is transparent to light, said stack of thin films consisting at least of a transparent electrode, an absorber layer and a metal electrode, said transparent zones being apertures produced at least in the metal electrode and in the absorber layer in order to allow as much light as possible to pass, characterized in that it furthermore comprises an electrically conductive collecting gate arranged either making contact with the front electrode in order to decrease the electrical resistance of the transparent electrode, or making contact with the absorber in order to facilitate collection of the electrical current generated by said mono cell. | 2016-05-05 |
| 20160126408 | LED HAVING VERTICAL CONTACTS REDISTRIBUTED FOR FLIP CHIP MOUNTING - A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface though which light is emitted. A copper layer has a first portion electrically connected to and opposing the bottom surface of the p-type layer. A dielectric wall extends through the copper layer to isolate a second portion of the copper layer from the first portion. A metal shunt electrically connects the second portion of the copper layer to the top surface of the n-type layer. P-metal electrodes electrically connect to the first portion, and n-metal electrodes electrically connect to the second portion, wherein the LED structure forms a flip chip. Other embodiments of the methods and structures are also described. | 2016-05-05 |
| 20160126409 | ULTRAVIOLET LIGHT EMITTING APPARATUS - An ultraviolet light emitting apparatus may include a chamber, at least one semiconductor light emitting device, an electron beam irradiation source, and first and second connection electrodes configured to apply a voltage from an external power source to the at least one semiconductor light emitting device. The chamber may define an internal space and include a light emission window. The at least one semiconductor light emitting device may be on the light emission window and include a first conductivity type nitride semiconductor layer, an undoped nitride semiconductor layer, and an active layer between the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer. The electron beam irradiation source may be in the internal space of the chamber and configured to irradiate an electron beam onto the undoped nitride semiconductor layer. | 2016-05-05 |
| 20160126410 | SEMICONDUCTOR STRUCTURES HAVING ACTIVE REGIONS INCLUDING INDIUM GALLIUM NITRIDE, METHODS OF FORMING SUCH SEMICONDUCTOR STRUCTURES, AND RELATED LIGHT EMITTING DEVICES - Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer comprising In | 2016-05-05 |
| 20160126411 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a light emitting element includes n-type and p-type semiconductor layers and a light emitting unit. The light emitting unit is provided between the n-type semiconductor layer and the p-type semiconductor layer, the light emitting unit emits light with a peak wavelength of not less than 530 nm. The light emitting unit includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer provided between the n-side barrier layer and the p-type semiconductor layer, a first well layer contacting the n-side barrier layer between the n-side barrier layer and the first barrier layer, a first AlGaN layer provided between the first well layer and the first barrier layer and including Al | 2016-05-05 |
| 20160126412 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nanostructure semiconductor light emitting device may including: a base layer formed of a first conductivity-type semiconductor, an insulating layer formed on an upper surface of the base layer and including a first region having a plurality of openings and a plurality of second regions positioned in the plurality of openings and spaced apart from the first region, dielectric nanocores disposed in the plurality of second regions, and a plurality of light emitting nanostructures each including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially disposed on the dielectric nanocores. | 2016-05-05 |
| 20160126413 | LIGHT EMITTING DEVICE AND LIGHTING SYSTEM - Disclosed are a light emitting device, a method of manufacturing a light emitting device, a light emitting device package and a lighting system. The light emitting device includes a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a contact layer on the second conductive semiconductor layer; an insulating layer on the contact layer; a first branch electrode electrically connected to the first conductive semiconductor layer; a plurality of first via electrodes connected to the first branch electrode and electrically connected to the first conductive semiconductor layer by passing through the insulating layer; a first pad electrode electrically connected to the first branch electrode; a second pad electrode contacts the contact layer by passing through the insulating layer; a second branch electrode connected to the second pad electrode and disposed on the insulating layer; and a plurality of second via electrodes provided throughprovided through the insulating layer to electrically connect the second branch electrode to the contact layer. | 2016-05-05 |
| 20160126414 | Chip Substrate and Chip Package Module - A chip substrate includes conductive portions, insulation portions, cavities and a heat dissipating portion. The insulation portions are alternately bonded to the conductive portions to electrically isolate the conductive portions. The lens insertion portions are formed on an upper surface of the chip substrate at a predetermined depth so as to extend across each of the insulation portions. Each of the lens insertion portions includes a predetermined number of straight sides and a predetermined number of arc-shaped corners formed in regions where the straight sides meet with each other. The cavities are formed inward of the lens insertion portions at a predetermined depth so as to extend across each of the insulation portions. The heat dissipating portion is bonded to a lower surface of the chip substrate. | 2016-05-05 |
| 20160126415 | METHOD FOR PRODUCING LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR - On the well layer, a first InGaN protective layer is formed at the same temperature employed for the well layer through MOCVD. TMI is pulse supplied. A TMI supply amount is kept constant at a predetermined value of more than 0 μmol/min and not more than 2 μmol/min. Moreover, a duty ratio is kept constant at a predetermined value of more than 0 and not more than 0.95. The In composition ratio of the first protective layer is almost directly proportional to the duty ratio. The In composition ratio of the first protective layer can be easily and accurately controlled by controlling the duty ratio so as to have an In composition ratio within a range of more than 0 at % and not more than 3 at %. | 2016-05-05 |
| 20160126416 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME - The invention relates to an optoelectronic device and to the method for manufacturing same. The optoelectronic device ( | 2016-05-05 |
| 20160126417 | Light Emitting, Photovoltaic Or Other Electronic Apparatus and System - The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap. | 2016-05-05 |
| 20160126418 | SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING A PHOTONIC CRYSTAL PATTERN FORMED THEREON, AND METHOD FOR MANUFACTURING SAME - The present invention relates to a semiconductor light-emitting device having a two-stage photonic crystal pattern formed thereon, and to a method for manufacturing same. According to the present invention, a second photonic crystal pattern is formed inside a first photonic crystal pattern formed on a semiconductor layer or transparent electrode layer, in order to improve light extraction efficiency. Also, according to the present invention, in order to form a second fine nanoscale photonic crystal pattern in the first photonic crystal pattern, a nanosphere lithography process employing polymer beads is used, and a trapping layer made of a thermoplastic resin was used to conveniently form polymer beads in a single layer so as to eliminate the inconvenience of having to calculate and change process variables according to polymer bead sizes in traditional nanosphere lithography processes. | 2016-05-05 |
| 20160126419 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - There is provided a semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor material, and a plurality of light-emitting nanostructures disposed on the base layer to be spaced apart from each other, and including first conductivity-type semiconductor cores, active layers, and second conductivity-type semiconductor layers. The first conductivity-type semiconductor cores include rod layers extending upwardly from the base layer, and capping layers disposed on the rod layers. Heights of the rod layers are different in at least a portion of the plurality of light-emitting nanostructures, and heights of the capping layers are different in at least a portion of the plurality of light-emitting nanostructures. | 2016-05-05 |
| 20160126420 | WHITE LIGHT-EMITTING ELEMENT - A white light-emitting device of the present invention includes a substrate ( | 2016-05-05 |
| 20160126421 | COMPOSITE ELECTRODE, ARRAY SUBSTRATE AND DISPLAY DEVICE - A composite electrode comprises at least one graphene layer and at least one doping layer, and two adjacent layers are not both the doping layer; wherein the doping layer is an aluminum chloride layer or a zinc iodide layer. It is used for manufacture of a display device. | 2016-05-05 |
| 20160126422 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light-emitting device of the present disclosure includes a plurality of semiconductor layers; a first inclined face having a first slope inside the plurality of semiconductor layers, which connects an etched-exposed surface of the first semiconductor layer with the surface of the second semiconductor layer and reflects the light from the active layer towards the first semiconductor layer; a second inclined face having a second slope greater than the first slope, which is provided around the plurality of semiconductor layers and reflects the light from the active layer towards the first semiconductor layer; a non-conductive reflective film formed on the second semiconductor layer, for reflecting the light from the active layer towards the first semiconductor layer. | 2016-05-05 |
| 20160126423 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device which includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first current blocking layer, a second current blocking layer arranged on the light emitting structure to be separated from each other, a light-transmitting conductive layer arranged on the first current blocking layer, the second current blocking layer and the light emitting structure, first electrode and second electrode electrically coupled to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, a through hole formed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer, and a through electrode arranged inside the through hole. Here, the through electrode does not overlap the first current blocking layer in a vertical direction. | 2016-05-05 |
| 20160126424 | LIGHT-EMITTING DIODE LIGHTING DEVICE - A light-emitting diode (LED) lighting device includes a substrate, a first bottom electrode, a second bottom electrode, a first bottom transparent isolation layer, a second bottom transparent isolation layer, a first vertical LED, a second vertical LED, and a top transparent electrode. The substrate has a first recess and a second recess therein. The first bottom electrode and the second bottom electrode are respectively disposed in the first recess and the second recess and are reflective. The first vertical LED is disposed in the first recess and on the first bottom electrode. The second vertical LED is disposed in the second recess and on the second bottom electrode. The first bottom transparent isolation layer and the second bottom transparent isolation layer are respectively disposed in the first recess and the second recess. The top transparent electrode electrically connects the first vertical LED and the second bottom electrode. | 2016-05-05 |
| 20160126425 | LED AND LED PACKAGING METHOD THEREOF - An LED is provided, the LED comprising a lighting assembly and a light bead. The light bead encases the lighting assembly. A cross-section of an upper portion of the light bead is an asymmetric shape with respect to the projection of a normal of the lighting assembly on the cross-section of the upper portion of the light bead, while a cross-section at the lower portion of the light bead perpendicular to the axis is a symmetric shape with respect to the projection of the normal of the lighting assembly on the cross-section at the lower portion of the light bead. The lighting assembly is located at a symcenter of the lower portion of the light bead. The aforementioned LED can increase its visible range, and can ensure an even distribution of the internal stress surrounding the lighting assembly. An LED packaging method is also provided. | 2016-05-05 |
| 20160126426 | LIGHT EMITTING MODULE - An embodiment relates to a light emitting module. A light emitting module according to an embodiment comprises: a light source unit comprising a light emitting device; a body comprising a lower portion on which the light source unit is arranged, a wall portion arranged on the lower portion and configured to surround the light source unit, and an upper portion arranged on the wall portion; an optical member arranged on the light source unit to transmit light from the light emitting device; and an adhesive member arranged between the wall portion of the body and the optical member to couple the body and the optical member, wherein the upper portion of the body is arranged between the light emitting device and the adhesive member. | 2016-05-05 |
| 20160126427 | An LED Module and its Manufacturing Process - The present invention relates to the technical field of illuminating lamp, especially to an LED module and its manufacturing process. The LED module of the present invention includes a lens group, an LED illuminant, a circuit board and a heat sink; the LED illuminant includes an LED chip and a heat sink holder; the LED chip is attached to the heat sink holder which is disposed on the circuit board by Surface Mounted Technology; the lens group covers the heat sink, and is located above the LED chip; encapsulant is filled in a confined space formed between the lens group and the heat sink through a process of injection. Compared with the prior art, in the LED module of the present invention, the encapsulant replaces the original air medium in the transmission process of the light emitted by the LED chip; moreover, the matching between the refractive index of the encapsulant and the lens of the lens group improves the light out-coupling efficiency to greatest extent. Lighting efficiency is improved by 10˜15% compared with the prior art. | 2016-05-05 |
| 20160126428 | LIGHT EMITTING DEVICE - A light emitting device is provided which includes a light emitting element, a phosphor, and a sealing member. The light emitting element has a light emission peak wavelength in the range not shorter than 400 nm and not longer than 460 nm. The phosphor can be excited by light from the light emitting element, and emit luminescent radiation with a light emission peak wavelength in the range in not shorter than 600 nm and not longer than 700 nm. The sealing member includes a pigment for absorbing a part of the light from the light emitting element. X of the light emission chromaticity of the light emitting device falls within the range of x≧0.600 in the chromaticity coordinates in the CIE 1931 color space chromaticity diagram. | 2016-05-05 |
| 20160126429 | Light emitting diode laminated with a phosphor sheet and manufacturing method thereof - A method for laminating a film over a light emitting diode (LED), where the thickness of a portion of the film disposed over the top surface of the LED is reduced by pressing a flattening element against the top surface of the LED. The resulting form of the phosphor encapsulation allows for an improved color homogeneity. | 2016-05-05 |
| 20160126430 | LIGHT-EMITTING DEVICE WITH HARDENED ENCAPSULANT ISLANDS - In one embodiment, a light-emitting device having a light source die, a substantially transparent encapsulant surrounding the light source die, and a second substantially transparent encapsulant at least partially covering the first substantially transparent encapsulant is disclosed. The second substantially transparent encapsulant may expose a portion of the first substantially transparent encapsulant. The second substantially transparent encapsulant may be less tacky, and may be hardened as compared to the first substantially transparent encapsulant. The second substantially transparent encapsulant may comprise a plurality of encapsulant islands that are distanced away from one another. In another embodiment, the light-emitting device may comprise a third substantially transparent encapsulant covering a portion of the first substantially transparent encapsulant that is exposed by the second substantially transparent encapsulant. | 2016-05-05 |
| 20160126431 | CURABLE COMPOSITION FOR SEALING OPTICAL SEMICONDUCTOR - A curable composition according to the present invention for sealing optical semiconductor includes components (A), (B), and (C). Another curable composition according to the present invention for sealing optical semiconductor further includes a component (D) in addition to the components (A), (B) and (C). The component (A) is a compound containing at least one functional group selected from the group consisting of epoxy groups, oxetanyl groups, vinyl ether groups, and (meth)acryloyl groups. The component (B) is a cycloaliphatic epoxy compound. The component (C) is a curing catalyst including a cationic component and an anionic component and generating an acid upon application of light or heat, where the cationic component contains an aromatic ring, and the anionic component contains a central element selected from boron and phosphorus. The component (D) is conductive fiber-bearing particles each including a particulate substance and a fibrous conductive substance lying on or over the particulate substance. | 2016-05-05 |
| 20160126432 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE - A method of manufacturing a semiconductor light emitting device package includes providing a wafer and forming, on the wafer, a semiconductor laminate comprising a plurality of light emitting devices. Electrodes are formed in respective light emitting device regions of the semiconductor laminate. A curable resin is applied to a surface of the semiconductor laminate on which the electrodes are formed. A support structure is formed for supporting the semiconductor laminate by curing the curable resin. Through holes are formed in the support structure to expose the electrodes therethrough. Connection electrodes are formed in the support structure to be connected to the exposed electrodes. | 2016-05-05 |
| 20160126433 | LIGHT-EMITTING DEVICE - This disclosure discloses a method for making a light-emitting device, comprising steps of: providing a substrate; forming a light-emitting stack on the substrate; forming a first layer on the light-emitting stack; providing a permanent substrate; forming a second layer on the permanent substrate; bonding the first layer and the second layer to form a bonding layer to connect the substrate and the permanent substrate; wherein a refractive index of the bonding layer decreases from the light-emitting stack toward the permanent substrate. | 2016-05-05 |
| 20160126434 | LIGHT EMITTING DEVICE AND ADAPTIVE DRIVING BEAM HEADLAMP SYSTEM - A light emitting device includes a substrate, a plurality of first wiring members, a plurality of second wiring members and a plurality of light emitting elements. The first wiring members extend in a first direction. The second wiring members extend in a second direction. Each of the second wiring members is segmented into a plurality of second wiring portions. The light emitting elements are disposed along the second direction. A first electrode of the light emitting element is connected to a corresponding one of the first wiring members. A second electrode of the light emitting element has a first connection part and a second connection part that is linked to the first connection part. The first connection part and the second connection part are connected to a corresponding one of the second wiring members and bridge at least two of the segmented second wiring portions in the second direction. | 2016-05-05 |
| 20160126435 | LIGHT EMITTING DEVICE - A light emitting device includes an electrically conductive member, a light emitting element, a wire, and a sealing member. The wire contains gold and silver and connects the electrically conductive member and the light emitting element. The wire includes a ball portion and a recrystallized region. The ball portion is provided on an electrode of the light emitting element. The recrystallized region is provided on the ball portion and has a length in a range of 50 μm to 90 μm. The sealing member has a lower surface and an upper surface opposite to the lower surface and covers the light emitting element and the wire so that the lower surface faces the electrically conductive member and the light emitting element and so that a distance from a top of the ball portion to the upper surface of the sealing member is 90 μm to 230 μm. | 2016-05-05 |
| 20160126436 | P-N SEPARATION METAL FILL FOR FLIP CHIP LEDS - A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface through which light is emitted. Portions of the p-type layer and active layer are etched away to expose the n-type layer. The surface of the LED is patterned with a photoresist, and copper is plated over the exposed surfaces to form p and n electrodes electrically contacting their respective semiconductor layers. There is a gap between the n and p electrodes. To provide mechanical support of the semiconductor layers between the gap, a dielectric layer is formed in the gap followed by filling the gap with a metal. The metal is patterned to form stud bumps that substantially cover the bottom surface of the LED die, but do not short the electrodes. The substantially uniform coverage supports the semiconductor layer during subsequent process steps. | 2016-05-05 |
| 20160126437 | LIGHT-EMITTING DEVICE - The present invention discloses a light-emitting device which maximizes the optical efficiency and heat-radiation as well as facilitates thin film-type manufacture. The disclosed light-emitting device includes a film including a plurality of holes, upper conductive patterns for covering the plurality of holes, lower conductive patterns extended from the upper conductive pattern so as to be received in the holes, a bridge part for connecting adjacent upper conductive patterns, and a light-emitting diode chip installed in each of the upper conductive patterns, so that the device may be embodied in a thin film-type as well as maximizes the optical efficiency and heat-radiation, providing an advantage of reduced manufacturing time and cost. | 2016-05-05 |
| 20160126438 | THERMOELECTRIC DEVICE - The present invention is directed to a thermoelectric device that includes a plurality of thermoelectric couples positioned between a top plate and a bottom plate, wherein each thermoelectric couple comprises n-type and p-type element assemblies electrically connected in series and thermally connected in parallel. When the device is used for electrical power generation, the efficiency is increased by using semiconductor materials with a high Seebeck coefficient, increasing the distance between the n-type and p-type element assemblies, increasing the length of the electrical conductors/thermal distance between the top and bottom plates, and/or using an insulation plate spaced from the top plate. When the device is used for heating/cooling, the coefficients of performance are increased by using semiconductor materials with a high Seebeck coefficient and/or optimizing the length of the electrical conductors/thermal distance between the top and bottom plates. | 2016-05-05 |
| 20160126439 | P-TYPE HIGH-PERFORMANCE THERMOELECTRIC MATERIAL WITH REVERSIBLE PHASE CHANGE AND PREPARATION METHOD THEREFOR - The present invention relates to a P-type high-performance thermoelectric material featuring reversible phase change, and a preparation method therefor. The thermoelectric material has a chemical composition of Cu | 2016-05-05 |
| 20160126440 | METHOD OF PRODUCING NANOPARTICLES, METHOD OF PRODUCING THERMOELECTRIC MATERIAL, AND THERMOELECTRIC MATERIAL - A method of producing nanoparticles in a base material made of a semiconductor material including a base material element, each nanoparticle including the base material element and a heterogeneous element different from the base material element includes: a layering step of alternately layering a first layer and a second layer, the first layer including the heterogeneous element, the second layer not including the heterogeneous element; and an annealing step of forming the nanoparticles in the base material by performing an annealing treatment onto a layered structure including the first layer and the second layer layered on each other. In the layering step, the base material element is included in at least one of the first layer and the second layer, and the second layer is formed to be thicker than the first layer. | 2016-05-05 |
| 20160126441 | Structures, System and Method for Converting Electromagnetic Radiation to Electrical Energy - A substrate, resonant structures, a ground plane, a thermal optimization layer and energy transfer structures are combined to receive and convert incoming electromagnetic radiation into electrical energy. This combination of materials may be housed in various configurations near heat sources to maximize surface area for heat contact as well as cooling. All structures are designed so as to be manufactured in low cost processes such as roll to roll. | 2016-05-05 |
| 20160126442 | THERMOELECTRIC POWER GENERATOR - Disclosure is related to a thermoelectric power generator. The generator essentially includes a thermoelectric thin-film element which is such as a thin film used to generate voltages according to a temperature difference. The output electric signals are converted to energy stored in an energy storage element. An output circuit is included to output power. In an exemplary embodiment, the thermoelectric power generator has a contact interface for sensing external temperate. The thermoelectric thin-film element is enabled to output voltages when temperature difference is induced. The generator further has a switch, which is used to control if the power is output. The output element is such as a light-emitting element. | 2016-05-05 |
| 20160126443 | PACKAGED DEVICE INCLUDING CAVITY PACKAGE WITH ELASTIC LAYER WITHIN MOLDING COMPOUND - A device includes a substrate; a cavity package having a first surface attached to the substrate, the cavity package enclosing an electronic circuit; an elastic layer formed on a second surface of the cavity package, opposite the first surface; and a molding compound formed on the substrate, encasing the cavity package and the elastic layer. The elastic layer decouples stress between the cavity package and the molding compound encasing the cavity package, for maintaining structural integrity of the cavity package and for preventing separation of the cavity package from the substrate. | 2016-05-05 |
| 20160126444 | PIEZOELECTRIC ACTUATOR - The invention relates to a piezoelectric actuator ( | 2016-05-05 |
| 20160126445 | ULTRASONIC PROBE AS WELL AS ELECTRONIC APPARATUS AND ULTRASONIC IMAGING APPARATUS - An ultrasonic probe is provided that makes it possible to increase the shock resistance of a board of an ultrasonic device unit. An ultrasonic probe includes a housing. The housing defines an opening and an accommodation space that is continuous with the opening. An ultrasonic device unit is disposed in the accommodation space. A board has on its first surface an ultrasonic transducer that faces the opening. A rigid body is in contact with a second surface of the board and the housing. The rigid body has higher stiffness than the board. | 2016-05-05 |
| 20160126446 | PASSIVATION AND ALIGNMENT OF PIEZOELECTRONIC TRANSISTOR PIEZORESISTOR - A method of forming a piezoelectronic transistor (PET) device, the PET device, and a semiconductor including the PET device are described. The method includes forming a first metal layer, forming a layer of a piezoelectric (PE) element on the first metal layer, and forming a second metal layer on the PE element. The method also includes forming a well above the second metal layer, forming a piezoresistive (PR) material in the well and above the well, and forming a passivation layer and a top metal layer above the PR material at the diameter of the PR material above the well, wherein a cross sectional shape of the well, the PR material above the well, the passivation layer, and the top metal layer is a T-shaped structure. The method further includes forming a metal clamp layer as a top layer of the PET device. | 2016-05-05 |
| 20160126447 | PIEZOELECTRONIC TRANSISTOR WITH CO-PLANAR COMMON AND GATE ELECTRODES - A method of forming a piezoelectronic transistor (PET), the PET, and a semiconductor device including the PET are described. The method includes forming a piezoelectric (PE) element with a trench and forming a pair of electrodes on the PE element in a coplanar arrangement in a first plane, both of the pair of electrodes being on a same side of the PE element. The method also includes forming a piezoresistive (PR) element above the pair of electrodes and forming a clamp above the PR element. Applying a voltage to the pair of electrodes causes displacement of the PE element perpendicular to the first plane. | 2016-05-05 |
| 20160126448 | INTEGRATING A PIEZORESISTIVE ELEMENT IN A PIEZOELECTRONIC TRANSISTOR - A semiconductor device, a piezoelectronic transistor (PET) device, and a method of fabricating the PET device are described. The method includes forming a first stack of dielectric layers, forming a first metal layer over the first stack, forming a piezoelectric (PE) material on the first metal layer, and forming a second metal layer on the PE material. The method also includes forming a piezoresistive (PR) element on the second metal layer through a gap in a first membrane formed a distance d above the second metal layer. | 2016-05-05 |
| 20160126449 | VIBRATOR AND ULTRASONIC MOTOR - This invention prevents an adhesive portion between a piezoelectric element and a conducting member of a small vibrator from peeling off. In a vibrator, a conducting member includes at least one first adhesive portion adhered to an electrode, at least one second adhesive portion adhered to an elastic member, and a feed portion electrically connected to means for applying an external voltage. In the conducting member, a path length from the feed portion to the first adhesive portion is longer than a path length from the feed portion to the second adhesive portion. | 2016-05-05 |
| 20160126450 | DIAPHRAGM ACTUATOR AND METHOD FOR PRODUCING A DIAPHRAGM ACTUATOR - A diaphragm actuator has a first frame part and a second frame part, between which at least two diaphragm layers are disposed in a stacked manner and formed as electro-active polymer layers. Furthermore, a method for producing a diaphragm actuator is described. | 2016-05-05 |
| 20160126451 | Method of Making Thick Film Transducer Arrays - Various embodiments provide processes of fabrication to form acoustically and electrically isolated elements of a transducer array. For example, a cutting means such as use of a dicing saw, a laser, or etching, can be used on a cylindrically-focused transducer to form acoustically and electrically isolated elements of the transducer array. | 2016-05-05 |
| 20160126452 | BALANCING ENERGY BARRIER BETWEEN STATES IN PERPENDICULAR MAGNETIC TUNNEL JUNCTIONS - Techniques are disclosed for enhancing performance of a perpendicular magnetic tunnel junction (MTJ) by implementing an additional ferromagnetic layer therein. The additional ferromagnetic layer can be implemented, for example, in or otherwise proximate either the fixed ferromagnetic layer or the free ferromagnetic layer of the perpendicular MTJ. In some embodiments, the additional ferromagnetic layer is implemented with a non-magnetic spacer, wherein the thickness of the additional ferromagnetic layer and/or spacer can be adjusted to sufficiently balance the energy barrier between parallel and anti-parallel states of the perpendicular MTJ. In some embodiments, the additional ferromagnetic layer is configured such that its magnetization is opposite that of the fixed ferromagnetic layer. | 2016-05-05 |
| 20160126453 | THERMALLY TOLERANT PERPENDICULAR MAGNETIC ANISOTROPY COUPLED ELEMENTS FOR SPIN-TRANSFER TORQUE SWITCHING DEVICE - Perpendicular magnetic anisotropy (PMA) type magnetic random access memory cells are constructed with a composite PMA layer to provide a magnetic tunnel junction (MTJ) with an acceptable thermal barrier. A PMA coupling layer is deposited between a first PMA layer and a second PMA layer to form the composite PMA layer. The composite PMA layer may be incorporated in PMA type MRAM cells or in-plane type MRAM cells. | 2016-05-05 |
| 20160126454 | ISOLATION OF MAGNETIC LAYERS DURING ETCH IN A MAGNETORESISTIVE DEVICE - Methods for manufacturing magnetoresistive devices are presented in which isolation of magnetic layers in the magnetoresistive stack is achieved by oxidizing exposed sidewalls of the magnetic layers prior to subsequent etching steps. Etching the magnetic layers using a non-reactive gas further prevents degradation of the sidewalls. | 2016-05-05 |
| 20160126455 | CONCAVE WORD LINE AND CONVEX INTERLAYER DIELECTRIC FOR PROTECTING A READ/WRITE LAYER - An alternating stack of electrically conductive layers and electrically insulating layers is formed over global bit lines formed on a substrate. The alternating stack is patterned to form a line stack of electrically conductive lines and electrically insulating lines. Trench isolation structures are formed within each trench to define a plurality of memory openings laterally spaced from one another by the line stack in one direction and by trench isolation structures in another direction. The electrically conductive lines are laterally recessed relative to sidewall surfaces of the electrically insulating lines. A read/write memory material is deposited in recesses, and is anisotropically etched so that a top surface of a global bit line is physically exposed at a bottom of each memory opening. An electrically conductive bit line is formed within each memory opening to form a resistive random access memory device. | 2016-05-05 |
| 20160126456 | DONOR SUBSTRATE - A donor substrate including: a light-transmitting base substrate; an insulation layer disposed on an upper surface of the light-transmitting base substrate, the insulating layer including: a first area having a first thickness; a second area having a second thickness, the second thickness different from the first thickness; and a third area having a third thickness, the third thickness different from the first thickness and the second thickness; an absorption layer disposed on the insulation layer; and a transfer layer disposed on the absorption layer. | 2016-05-05 |
| 20160126457 | LASER CRYSTALLIZATION SYSTEM, LASER CRYSTALLIZATION METHOD, AND METHOD OF FABRICATING DISPLAY DEVICE - A laser crystallization system, including an output unit configured to generate output laser light, an optical unit configured to split the output laser light into a first laser light and a second laser light, and to process the first laser light to have a crystallization energy density, a moving unit configured to move a target object to be irradiated with the first laser light and the second laser light, a detection unit configured to detect surface information of the target object utilizing the second laser light, and an input unit configured to receive the detected surface information and to transmit a control signal to the output unit and the moving unit, wherein the laser crystallization system is configured to detect the surface information of the target object and to crystallize the target object utilizing only the output laser light. | 2016-05-05 |
| 20160126458 | METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENCE DISPLAY APPARATUS AND ORGANIC ELECTROLUMINESCENCE DISPLAY APPARATUS - A method includes: (a) preparing the organic electroluminescence display apparatus including: plural elements in which a reflective anode, an organic layer including an emission layer, and a transparent cathode are stacked; and partition walls, in which at least one of the picture elements is a bright spot defective element that always lights or blinks and (b) applying a laser beam to an area of the transparent cathode in the bright spot defective element, to draw a closed line and to have an unirradiated area along a periphery of the area, the area reflecting an emitting part. Step (b) includes (b-1) transforming the transparent cathode and an electron transmission layer by focusing the laser beam on the transparent cathode. In step (b-1), an area transformed in the electron transmission layer is enlarged by application of the laser beam. | 2016-05-05 |
| 20160126459 | ORGANIC FILM TRANSISTOR, ORGANIC SEMICONDUCTOR FILM, ORGANIC SEMICONDUCTOR MATERIAL AND APPLICATION OF THESE - An organic film transistor containing a compound, which is composed of n repeating units represented by Formula (1-1), (1-2), or (101), in a semiconductor active layer is an organic film transistor using a compound that results in high carrier mobility when being used in the semiconductor active layer of the organic film transistor and exhibits high solubility in an organic solvent. | 2016-05-05 |
| 20160126460 | ORGANIC FILM TRANSISTOR, ORGANIC SEMICONDUCTOR FILM, AND ORGANIC SEMICONDUCTOR MATERIAL AND USE APPLICATIONS THEREOF - An organic film transistor containing a compound, which is composed of n repeating units represented by Formula (1-1), (1-2), (101-1), or (101-2), in a semiconductor active layer is an organic film transistor using a compound having high carrier mobility and high solubility in an organic solvent. | 2016-05-05 |
| 20160126461 | ORGANIC LIGHT EMITTING DEVICE - An OLED comprising a hole-transporting layer and light-emitting layer wherein the hole-transporting layer comprises a hole-transporting polymer wherein no more than 5% of the polystyrene equivalent polymer weight measured by gel permeation chromatography consists of chains with weight of less than 50,000. | 2016-05-05 |
| 20160126462 | FULLERENE DERIVATIVE AND N-TYPE SEMICONDUCTOR MATERIAL - The present invention is a material having excellent performance as an n-type semiconductor material, in particular for organic thin-film solar cells. | 2016-05-05 |
| 20160126463 | Benzo[a] Anthracene Compound, Light-Emitting Element, Display Device, Electronic Device, and Lighting Device - Provided is a light-emitting element with high emission efficiency including a fluorescent material as a light-emitting substance. In a light-emitting element including a pair of electrodes and an EL layer between the pair of electrodes, a delayed fluorescence component due to triplet-triplet annihilation accounts for 20% or more of light emitted from the EL layer, and the light has at least one emission spectrum peak in the blue wavelength range. The EL layer includes an organic compound in which an energy difference between the lowest singlet excited energy level and the lowest triplet excited energy level is 0.5 eV or more. The EL layer includes a benzo[a]anthracene compound. | 2016-05-05 |
| 20160126464 | ORGANIC ELECTROLUMINESCENT DEVICE - An organic electroluminescent (EL) device having high efficiency, low driving voltage and a long lifetime is provided by combining various materials for an organic EL device, which are excellent, as materials for an organic EL device having high efficiency and high durability, in hole and electron injection/transport performances, electron blocking ability, stability in a thin-film state and durability, so as to allow the respective materials to effectively reveal their characteristics. In the organic EL device having at least an anode, a hole injection layer, a first hole transport layer, a second hole transport layer, a light emitting layer, an electron transport layer and a cathode in this order, the second hole transport layer includes an arylamine compound represented by the following general formula (1). | 2016-05-05 |
| 20160126465 | COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE COMPRISING SAME - A compound represented by Formula 1 below, and an organic light-emitting device including the compound: | 2016-05-05 |
| 20160126466 | ORGANIC LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME - An organic light emitting device and a display device, the organic light emitting device including a first electrode; a hole transport region on the first electrode; an emission layer on the hole transport region; an electron transport region on the emission layer; and a second electrode on the electron transport region, wherein the hole transport region includes a compound represented by the following Formula 1: | 2016-05-05 |
| 20160126467 | AMINE DERIVATIVES, MATERIAL FOR ORGANIC ELECTROLUMINESCENT DEVICE AND ORGANIC ELECTROLUMINESCENT DEVICE INCLUDING THE SAME - A material for an organic electroluminescent device having high emission efficiency and an organic electroluminescent device including the same. An amine derivative of an embodiment of the inventive concept is represented by Formula (1). | 2016-05-05 |
| 20160126468 | INDENOINDOLE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT ELEMENT - According to the present invention, there are provided an indenoindole derivative represented by the following general formula (1); and an organic electroluminescent element including a pair of electrodes and at least one organic layer sandwiched therebetween, wherein the above compound is used as a constituent material for the at least one organic layer. The indenoindole derivative of the present invention provides an organic compound, which is excellent in hole injection/transport performance, has electron blocking capability, is highly stable in a thin film state, and excels in heat resistance, as a material for a high efficiency, high durability organic electroluminescent element. An organic electroluminescent element formed using this compound is highly efficient and highly durable. | 2016-05-05 |
| 20160126469 | MATERIAL FOR ORGANIC ELECTROLUMINESCENT DEVICE AND ORGANIC ELECTROLUMINESCENT DEVICE INCLUDING THE SAME - Provided are a material for an organic electroluminescent device capable of being driven at a low voltage and having high emission efficiency. An organic electroluminescent device includes the same. An embodiment of the material for an organic electroluminescent device according to the present disclosure is represented by Formula 1. The substituents of Formula 1 are as described herein. | 2016-05-05 |
| 20160126470 | COMPOUND FOR ORGANIC PHOTOELECTRIC DEVICE AND ORGANIC PHOTOELECTRIC DEVICE, IMAGE SENSOR, AND ELECTRONIC DEVICE INCLUDING THE SAME - A compound for an organic photoelectric device is represented by Chemical Formula 1. An organic photoelectric device includes a first electrode and a second electrode facing each other and an active layer between the first electrode and the second electrode, the active layer including the compound represented by Chemical Formula 1. | 2016-05-05 |
| 20160126471 | ORGANIC OPTOELECTRIC DEVICE AND DISPLAY DEVICE - An organic optoelectric device including an anode and a cathode facing each other, an emission layer between the anode and the cathode, a hole transport layer between the anode and the emission layer, a hole transport auxiliary layer between the hole transport layer and the emission layer, an electron transport layer between the cathode and the emission layer, and an electron transport auxiliary layer between the electron transport layer and the emission layer, wherein the electron transport auxiliary layer includes a first compound represented by the following Chemical Formula 1, and the hole transport auxiliary layer includes a second compound represented by the following Chemical Formula | 2016-05-05 |
| 20160126472 | COMPOSITION FOR ORGANIC OPTOELECTRONIC DEVICE, ORGANIC OPTOELECTRONIC DEVICE, AND DISPLAY DEVICE - Disclosed are a composition for an organic optoelectronic device including at least one kind of a first host compound represented by the Chemical Formula 1 and at least one kind of a second host compound represented by the Chemical Formula 2, and an organic optoelectronic device and a display device including the composition. | 2016-05-05 |
| 20160126473 | MULTICYCLIC COMPOUND AND ORGANIC ELECTRONIC DEVICE USING THE SAME - The present specification describes a novel polycyclic compound and an organic electroluminescent device using the same. | 2016-05-05 |
| 20160126474 | CARBAZOLE-BASED COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A carbazole compound represented by Formula 1: | 2016-05-05 |
| 20160126475 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer, wherein the organic layer includes a first material represented by Formula 1, and a second material represented by Formula 2, | 2016-05-05 |
| 20160126476 | NOVEL COMPOUND, LIGHT EMITTING DEVICE COMPRISING SAME, AND ELECTRONIC DEVICE - A novel compound for improving the hole injection and transport properties in a light emitting device, a light emitting device including the compound, and an electronic device including a light emitting device are provided. | 2016-05-05 |
| 20160126477 | ORGANIC COMPOUND FOR OPTOELECTRIC DEVICE AND COMPOSITION FOR OPTOELECTRIC DEVICE AND ORGANIC OPTOELECTRIC DEVICE AND DISPLAY DEVICE - Disclosed are a first compound for an organic optoelectric device represented by a combination of Chemical Formula I-1 and Chemical Formula I-2 and a composition for an organic optoelectric device including the first compound for an organic optoelectric device and at least one second compound for an organic optoelectric device having a moiety represented by Chemical Formula II, and an organic optoelectric device and a display device including the same. Chemical Formula I-1, Chemical Formula I-2 and Chemical Formula II are the same as described in the detailed description. | 2016-05-05 |
| 20160126478 | EMISSIVE COMPOUNDS FOR LIGHT EMITTING DEVICES - Disclosed herein are compounds represented by Formula (1), wherein R | 2016-05-05 |
| 20160126479 | ORGANIC COMPOUND AND ORGANIC LIGHT EMITTING DIODE DEVICE INCLUDING THE SAME - An organic compound represented by Chemical Formula 1 is disclosed. Also a light emitting diode including the organic compound is described. | 2016-05-05 |
| 20160126480 | Metal Complexes - The present invention relates to metal complexes in accordance with formula (1), to use thereof in electronic devices and to electronic devices, particularly organic electroluminescent devices, containing said metal complexes. | 2016-05-05 |
| 20160126481 | TRANSPARENT DIFFUSIVE OLED SUBSTRATE AND METHOD FOR PRODUCING SUCH A SUBSTRATE - A transparent diffusive OLED substrate includes the following successive elements or layers: (a) a transparent flat substrate made of mineral glass having a refractive index n | 2016-05-05 |
| 20160126482 | Assembly of Vertically Aligned Nanotube Arrays Containing Particles and Application Thereof - A nanotube assembly including a nanotube layer, a first layer and a second layer. The nanotube layer comprises a vertically aligned nanotube array. The nanotube array includes a plurality of nanotubes. The first layer of a first conductive material is disposed on one surface of the nanotube layer. The second layer of a second conductive material is disposed on an opposite surface of the nanotube layer. The nanotube of the nanotube layer includes a first end against the first layer and a second end against the second layer. The resistance from the first end to the first layer is lower than a resistance from the second end to the second layer. One or more nano-particles are placed within the nanotube. At least one of the nano-particles is electrically charged, and can move along the nanotube under influence of an electric field. | 2016-05-05 |
| 20160126483 | ZSO-BASED PEROVSKITE SOLAR CELL AND ITS PREPARATION METHOD - Provided is a new ternary Zn | 2016-05-05 |
| 20160126484 | Optoelectronic Devices Made Using Layers Detached From Inherently Lamellar Semiconductor Donors - Optoelectronic devices containing functional elements made from layers liberated from natural and/or fabricated inherently lamellar semiconductor donors. In one embodiment, a donor is provided, a layer is detached from the donor, and the layer is incorporated into an optoelectronic device as a functional element thereof. The thickness of the detached layer is tuned as needed to suit the functionality of the functional element. Examples of functional elements that can be made using detached layers include p-n junctions, Schotkey junctions, PIN junctions, and confinement layers, among others. Examples of optoelectronic devices that can incorporate detached layers include LEDs, laser diodes, MOSFET transistors, and MISFET transistors, among others. | 2016-05-05 |
| 20160126485 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Discussed is an organic light emitting display device. The organic light emitting display device includes a substrate in which red, green, and blue pixel areas are defined, a first electrode and a hole transport layer formed on the substrate, first to third emitting material layers formed in each of the red, green, and blue pixel areas on the hole transport layer, a first electron transport layer formed on the first to third emitting material layers, a first charge generation layer formed on the first electron transport layer, a second charge generation layer formed on the first charge generation layer, fourth to sixth emitting material layers formed in each of the red, green, and blue pixel areas on the second charge generation layer, a second electron transport layer formed on the fourth to sixth emitting material layers, and a second electrode formed on the second electron transport layer. | 2016-05-05 |
| 20160126486 | PROCESS FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT - Various embodiments may relate to a process for producing an optoelectronic component. In the process, a carrier is provided. A first electrode is formed upon the carrier. An optically functional layer structure is formed upon the first electrode. A second electrode is formed upon the optically functional layer structure. At least one of the two electrodes is formed by disposing electrically conductive nanowires on a surface on which the corresponding electrode is to be formed, and by heating the nanowires in such a way that they plastically deform. | 2016-05-05 |
| 20160126487 | DISPLAY DEVICE - A display device includes a first substrate, a second substrate that covers the first substrate, a sealing member between the first and second substrates, the sealing member bonding the first and second substrates to each other, and one or more heating parts between the first substrate and the sealing member to apply heat to the sealing member during a sealing process of bonding the first and second substrates to each other. | 2016-05-05 |
| 20160126488 | ORGANIC LIGHT EMITTING DIODE STRUCTURE - There is provided an organic light emitting diode (OLED) comprising an organic electroluminescent layer formed between a first electrode and a second electrode, characterised in that one of the first and second electrodes comprises a nano-meter metallic layer having a plasmonic photonic crystal structure formed thereon, and wherein the plasmonic photonic crystal structure is configured to interact with surface plasmon polaritons generated at a surface of the ne electrode thereby providing for transmission of electromagnetic radiation having a wavelength of between 350 nm to 750 nm from the OLED. | 2016-05-05 |
| 20160126489 | LIGHT-EMITTING ELEMENT, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT - An organic EL element includes: a first electrode that is a metal layer; a transparent conductive layer containing indium zinc oxide; and a light-emitting layer, wherein the first electrode, the transparent conductive layer, and the light-emitting layer are stacked, and a ratio of zinc to indium in a vicinity of an interface of the transparent conductive layer is lower than or equal to 0.25, the interface being closer to the light-emitting layer. | 2016-05-05 |
| 20160126490 | ORGANIC ELECTROLUMINESCENCE ELEMENT, DISPLAY PANEL, AND METHOD FOR MANUFACTURING ORGANIC ELECTROLUMINESCENCE ELEMENT - Disclosed is an organic electroluminescence element that can provide uniform light emission over the entire surface and also can reduce the risk of short circuit and leakage. An organic electroluminescence element | 2016-05-05 |
| 20160126491 | Method for Producing an Optical Module - The invention relates to a method for producing an optical module, comprising the following steps: a) providing a chip having an optical element integrated in the chip, wherein the optical element bas a first electrode and a second electrode, and wherein the chip has a first connection contact for the first electrode and a second connection contact for the second electrode, such that an operating voltage for the optical element can be applied between the first connection contact and the second connection contact, and wherein the chip has an optically active side, which is designed to emit and/or to receive radiation; b) connecting the chip to a film, such that the film completely covers the optically active side of the chip, wherein the film is a film made from acrylate, polyarylate, or polyurethane, wherein the film, at least in the region located above the optically active side, is transparent to radiation which. when operating voltage is applied, can be emitted or received by the optical element; c) contacting the first connection contact of the chip by means of a conducting track arranged on the film and contacting the second connection contact by means of an additional conducting track. | 2016-05-05 |
| 20160126492 | ENCAPSULATION FILM FOR ORGANIC LIGHT EMITTING DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ORGANIC LIGHT EMITTING DISPLAY DEVICE USING THE SAME - Disclosed is an organic light emitting display apparatus. An outer portion of an adhesive layer is set higher in degree of cure than a center portion of the adhesive layer, and thus, a driving defect is prevented from occurring because the adhesive layer stretches in a manufacturing process, and various defects are prevented from being caused by a jig, thereby enhancing reliability and productivity of the organic light emitting display apparatus. | 2016-05-05 |
| 20160126493 | Light-Emitting Device, Lighting Device, and Electronic Device - It is an object to provide a flexible light-emitting device with high reliability in a simple way. Further, it is an object to provide an electronic device or a lighting device each mounted with the light-emitting device. A light-emitting device with high reliability can be obtained with the use of a light-emitting device having the following structure: an element portion including a light-emitting element is interposed between a substrate having flexibility and a light-transmitting property with respect to visible light and a metal substrate; and insulating layers provided over and under the element portion are in contact with each other in the outer periphery of the element portion to seal the element portion. Further, by mounting an electronic device or a lighting device with a light-emitting device having such a structure, an electronic device or a lighting device with high reliability can be obtained. | 2016-05-05 |
| 20160126494 | TRANSPARENT DISPLAY SUBSTRATES, TRANSPARENT DISPLAY DEVICES AND METHODS OF MANUFACTURING TRANSPARENT DISPLAY DEVICES - A transparent display substrate, a transparent display device, and a method of manufacturing a transparent display device, the substrate including a base substrate including a pixel area and a transmission area; a pixel circuit on the pixel area of the base substrate; an insulation layer covering the pixel circuit on the base substrate; a pixel electrode selectively disposed on the pixel area of the base substrate, the pixel electrode being electrically connected to the pixel circuit at least partially through the insulation layer; and a transmitting layer structure selectively disposed on the transmission area of the base substrate, the transmitting layer structure including at least an inorganic material, the inorganic material consisting essentially of silicon oxynitride. | 2016-05-05 |
| 20160126495 | DEVICE STRUCTURE AND METHOD OF PRODUCING THE SAME - To provide a device structure that is capable of preventing oxygen, water, and the like from entering the device, and a method of producing the same. | 2016-05-05 |
| 20160126496 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - An organic light-emitting display apparatus includes: a substrate; first electrodes arranged on the substrate at separate positions; a second electrode disposed on the first electrodes to face the first electrodes; an intermediate layer disposed between the first electrodes and the second electrode and including an emission layer; a first encapsulating layer disposed on the second electrode and patterned to have a plurality of islands, the first encapsulating layer including an organic material; and a second encapsulating layer covering the islands of the first encapsulating layer and including an inorganic material. | 2016-05-05 |
| 20160126497 | ORGANIC ELECTROLUMINESCENCE DEVICE AND METHOD FOR PRODUCING ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device | 2016-05-05 |
| 20160126498 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE - An organic light-emitting display (OLED) device includes: a lower substrate; an organic light-emitting element disposed on the lower substrate; an anti-oxidation layer covering the organic light-emitting element; an inorganic oxide encapsulation layer covering the anti-oxidation layer; a first organic layer covering the inorganic oxide encapsulation layer; and a first inorganic encapsulation layer covering the first organic layer. The anti-oxidation layer is configured to suppress the organic light-emitting element from being oxidized by oxygen (O | 2016-05-05 |
| 20160126499 | ORGANIC LIGHT-EMITTING DIODE, ARRAY SUBSTRATE AND PREPARATION METHOD THEREOF, AND DISPLAY DEVICE - The present invention relates to an organic light-emitting diode, an array substrate and a preparation method thereof, and a display device. The organic light-emitting diode comprises an anode, a cathode, a light-emitting layer disposed between the anode and the cathode, and a hole injection layer disposed between the anode and the light-emitting layer, wherein the hole injection layer is provided therein with metal nanoparticles, and the frequency of a localized surface plasmon resonance of the metal nanoparticles is matched with the emission wavelength of the light-emitting layer. As the organic light-emitting diode is doped with metal nanoparticles in the hole injection layer and the resonance frequency of the localized surface plasmon of the metal nanoparticles is matched with the emission wavelength of the light-emitting layer, the metal nanoparticles are allowed to generate localized plasma resonance with photons, so that the light extraction efficiency of the organic light-emitting diode is enhanced. | 2016-05-05 |
| 20160126500 | Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - To provide a novel light-emitting element or a novel light-emitting device with high emission efficiency and low power consumption, a light-emitting element having a plurality of light-emitting layers between a pair of electrodes includes a lower electrode, a first light-emitting layer over the lower electrode, a charge-generation layer over the first light-emitting layer, a second light-emitting layer over the charge-generation layer, and an upper electrode over the second light-emitting layer. An emission spectrum of the first light-emitting layer peaks at a longer wavelength than an emission spectrum of the second light-emitting layer. A distance of between a bottom surface of the upper electrode and a bottom surface of the first light-emitting layer is less than or equal to 130 nm. | 2016-05-05 |
| 20160126501 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - Provided is an organic light emitting display device. An organic light emitting display device includes an organic light emitting element and a light scattering layer disposed on a bottom or a top of the organic light emitting element. The light scattering layer includes a photosensitive resin and dispersion particles dispersed in the photosensitive resin. The dispersion particles are configured to improve light extraction with respect to light emitted from the organic light emitting element and compensate a viewing angle with respect to the light emitted from the organic light emitting element. | 2016-05-05 |
| 20160126502 | ORGANIC ELECTROLUMINESCENT LIGHTING DEVICE - Provided is an organic electroluminescent lighting device which can be seen that the entire surface is uniformly illuminated from the side of a transparent electrode substrate even when an auxiliary electrode or an auxiliary wiring is provided with respect to the transparent electrode substrate. | 2016-05-05 |
