| 18th week of 2016 patent applcation highlights part 60 |
| Patent application number | Title | Published |
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| 20160126003 | MULTILAYER INDUCTOR - A multilayer inductor includes: a body; and internal electrodes disposed within the body and connected to each other through conductive vias, wherein widths of the internal electrodes have two or more different values within a range of 35 μm to 55 μm, and the internal electrodes include a first internal electrode and a second internal electrode having a width different from that of the first internal electrode. | 2016-05-05 |
| 20160126004 | CHIP ELECTRONIC COMPONENT - A chip electronic component includes a magnetic body containing magnetic metal powder, internal coil parts embedded in the magnetic body, and an anti-plating layer disposed on at least one of upper and lower surfaces of the magnetic body. The anti-plating layer contains magnetic metal powder having particle sizes within the range of 0.1 μm to 10 μm. | 2016-05-05 |
| 20160126005 | SURFACE-MOUNT INDUCTOR AND METHOD FOR MANUFACTURING THE SAME - A surface-mount inductor having a molded body which includes a coil formed by winding a rectangular wire and sealed by sealant having resin and filler, a surface of the molded body being a mounting face, the coil includes: first rolls wound in two-roll arrangement along the winding axis, the ends of the wire being placed at the outermost turn; and second rolls wound in positions adjacent to the first rolls and oppositely shifted along the winding axis, the inner diameter being equal to or larger than the outer diameter of the first rolls, the ends of the wire are brought out from the outermost turn of the second rolls as lead ends which are sealed in a manner that the winding axis is parallel with the mounting face and the lead ends are partially exposed at the mounting face, as well as a method for manufacturing the same. | 2016-05-05 |
| 20160126006 | COIL COMPONENT ASSEMBLY AND COIL COMPONENT - A coil component assembly includes a support member, a plurality of processed spaces penetrating through the support member, a plurality of coils disposed in the plurality of processed spaces, respectively, and a magnetic material covering the support member and the plurality of coils. The coil component assembly can be diced to form individually coil components. | 2016-05-05 |
| 20160126007 | APPARATUS WITH 3D INDUCTORS - Embodiments of an apparatus are disclosed that includes a first three dimensional (3D) inductor and a second 3D inductor. The first three dimensional (3D) inductor has a first conductive path shaped as a first two dimensional (2D) lobe laid over a first 3D volume. In addition, the second 3D inductor has a second conductive path, wherein the second 3D inductor is inserted into the first 3D inductor so that the second conductive path at least partially extends through the first 3D volume. Since second 3D inductor is inserted into the first 3D inductor, the 3D inductors may be coupled to one another. Depending on orientation and distances of structures provided by the 3D inductors, the 3D inductors may be weakly or moderately coupled. | 2016-05-05 |
| 20160126008 | Magnetic Core Inductor Integrated with Multilevel Wiring Network - An inductor is integrated into a multilevel wiring network of a semiconductor integrated circuit. The inductor includes a planar magnetic core and a conductive winding. The conductive winding turns around in generally spiral manner on the outside of the planar magnetic core. The conductive winding is piecewise constructed of wire segments and of VIAs. The wire segments pertain to at least two wiring planes and the VIAs are interconnecting the at least two wiring planes. Methods for such integration, and for fabricating laminated planar magnetic cores are also presented. | 2016-05-05 |
| 20160126009 | WIRELESS CHARGING COIL PCB STRUCTURE - A wireless charging coil PCB structure includes a first coil disposed on a first layer of PCB, where a center or peripheral of the first coil is a first non-coil region; a second coil disposed on a second layer of PCB, where a center or peripheral of the second coil is a second non-coil region; first conductive wires on the first non-coil region; and second conductive wires on the second non-coil region. Electric contacts are arranged between the first conductor and the second coil, and electrically connected in parallel to the first conductive wires and the portion of the second coil. Electric contacts are arranged between the second conductor and the first coil, and electrically connected in parallel to the second conductive wires and the portion of the first coil. The amount of charge is increased in the coil and resistance is reduced to overcome proximity effect. | 2016-05-05 |
| 20160126010 | FLEXIBLE CIRCUIT ASSEMBLY AND METHOD THEROF - An embedded device | 2016-05-05 |
| 20160126011 | CAPACITOR WITH IMPROVED HEAT DISSIPATION - A capacitor comprises a first winding member, where the first winding member comprises a first dielectric layer and a first conductive layer. A second winding member comprises a second dielectric layer and second conductive layer. The first winding member is interleaved, partially or entirely, with the second winding layer. A dielectric package is adapted to at least radially contain or border the first winding member and the second winding member. A first metallic member has a generally planar, radially extending surface for electrically and mechanically contacting an upper portion the first conductive layer. A second metallic member has a generally planar, radially extending surface for electrically and mechanically contacting a lower portion of the second conductive layer. | 2016-05-05 |
| 20160126012 | MULTILAYER CERAMIC CAPACITOR AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a multilayer ceramic capacitor includes stacking dielectric sheets on which internal electrode patterns are printed, to form a multilayer body, forming additional dielectric sheets on portions of opposite side surfaces of the multilayer body, and sintering the multilayer body to form a ceramic body in which internal electrodes are disposed. Here, the additional dielectric sheets form attachment parts on the opposite side surfaces of the ceramic body by the sintering of the multilayer body. | 2016-05-05 |
| 20160126013 | MULTILAYER CERAMIC ELECTRONIC COMPONENT AND BOARD HAVING THE SAME - A multilayer ceramic electronic component includes: a plurality of active parts disposed to be distinguishable from each other in a stacking direction, wherein internal electrodes of an upper active part include protrusion portions which correspond to band portions of external electrodes and extend in a width direction, and internal electrodes of a lower active part positioned to be adjacent to a mounting surface include recess portions which correspond to the band portions of the external electrodes and are recessed in the width direction. | 2016-05-05 |
| 20160126014 | MULTILAYER CERAMIC ELECTRONIC COMPONENT AND METHOD OF MANUFACTURING THE SAME - A multilayer ceramic electronic component includes an inner layer part comprising dielectric layers and internal electrodes that are alternately disposed; and cover parts disposed on upper and lower surfaces of the inner layer part. The cover parts contain a nickel metal. | 2016-05-05 |
| 20160126015 | MULTILAYER CERAMIC COMPONENT AND BOARD HAVING THE SAME - A multilayer ceramic component including a multilayer ceramic capacitor including first and second external electrodes disposed on a mounting surface of a ceramic body; and first and second terminal electrodes each including an upper horizontal part disposed on a lower surface of the respective external electrode, a lower horizontal part disposed below the upper horizontal part and spaced apart from the upper horizontal part, and a connecting part connecting the upper horizontal part and the lower horizontal part, the connecting part having a plurality of openings alternately facing opposite end surfaces of the ceramic body. | 2016-05-05 |
| 20160126016 | FILM CAPACITOR - A film capacitor includes metalized films in each of which a metal electrode is formed on a surface of a dielectric film, the metalized films being stacked in a thickness direction. The dielectric film includes a high dielectric layer that has a relatively high content of a high dielectric filler, and a low dielectric layer that has a relatively low content of the high dielectric filler or that does not contain the high dielectric filler. The low dielectric layer is provided in at least one of a position between the high dielectric layer and the metal electrode, and a position on an opposite side of the high dielectric layer from the metal electrode. | 2016-05-05 |
| 20160126017 | STRESS CONTROL DURING PROCESSING OF A MEMS DIGITAL VARIABLE CAPACITOR (DVC) - The present invention generally relates to a MEMS digital variable capacitor (DVC) ( | 2016-05-05 |
| 20160126018 | DYE-SENSITIZED SOLAR CELL MODULE USING THIN GLASS SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - Disclosed are a dye-sensitized solar cell module and a method of manufacturing the same. The dye-sensitized solar cell module includes a working electrode formed by stacking a collector and a photo-electrode to which a dye is adsorbed on a transparent conductive substrate; a counter electrode formed by stacking a collector and a catalytic electrode on a transparent conductive substrate; and an electrolyte filled in a space between the working electrode and the counter electrode sealed by a sealant. A glass substrate for the working electrode of glass substrates forming the transparent conductive substrates for the electrodes is a thin glass plate substrate thinner than the glass substrate for the working electrode. | 2016-05-05 |
| 20160126019 | A Dye-Sensitized Solar Cell and a Method for Manufacturing the Solar Cell - The present invention relates to a dye-sensitized solar cell including a light absorbing layer ( | 2016-05-05 |
| 20160126020 | ORGANIC SEMICONDUCTOR DOPING PROCESS - The present invention relates to the doping of organic semiconductors and processes for producing layers of p-doped organic semiconductors. Disclosed is a process for p-doping organic semiconductors comprising treating the organic semiconductor with an oxidised salt of the organic semiconductor. A process for producing a layer of a p-doped organic semiconductor comprising producing a p-doped organic semiconductor by treating the organic semiconductor with an oxidised salt of the organic semiconductor; disposing a composition comprising a solvent and the p-doped organic semiconductor on a substrate; and removing the solvent is also described. Also disclosed is a process for producing a layer of a p-doped organic semiconductor comprising: disposing a composition comprising a solvent, the organic semiconductor and a protic ionic liquid on a substrate; and removing the solvent. A process for producing a semiconductor device comprising a process for doping an organic semiconductor according to the invention is also described. Finally, a high purity p-dopant composition is described. | 2016-05-05 |
| 20160126021 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL - A photoelectric conversion element, including: an electron transporting material; and a porphyrin compound represented by General Formula (1) or (2), wherein the electron transporting material is coated with the porphyrin compound: | 2016-05-05 |
| 20160126022 | ORGANIC DYES COMPRISING A HYDRAZONE MOIETY AND THEIR USE IN DYE-SENSITIZED SOLAR CELLS - The present invention relates to compounds of general formula I | 2016-05-05 |
| 20160126023 | HIGH PERFORMANCE LITHIUM-ION CAPACITOR LAMINATE CELLS - The present invention provides for high performance lithium-ion capacitor laminate cells that include positive electrodes, negative electrodes and organic solvent electrolyte with lithium salt, and a method for making said high performance lithium-ion capacitor laminate cells. These high performance lithium-ion capacitor laminate cells of the present invention, include a negative electrode which is pre-doped with sufficient lithium ions by employing lithium sources including lithium powder known as SLMP or thin lithium films on the surface of negative electrodes, and this pre-doping with placing lithium sources on negative electrode surface results in LIC laminate cells with considerably higher performance in specific energy, specific power and cycle life. | 2016-05-05 |
| 20160126024 | Switch Contact Element and Its Preparation Method - A switch contact element, having a layered structure comprising three layers: the bottom layer is silicone rubber, the middle layer is a continuous base metal sheet layer, and the upper layer is a discontinuous (stripe-shaped, raised-point-shaped or lattice-shaped) precious metal plated layer or a double-metal composite layer of a discontinuous base metal plated layer and a precious metal plated layer. The thickness of the bottom layer is greater than that of the middle layer, the thickness of the middle layer is greater than that of the upper layer, and the thickness of the upper layer meets the conditions that the conductive current is greater than safe current of conductive contacts on a circuit board, and the service life of a switch for the design is ensured. | 2016-05-05 |
| 20160126025 | ON-LOAD TAP CHANGER AMD METHOD OF EMERGENCY SETTING DEFINED SWITCHING POSITION THEREOF - The invention relates to an electric motor-operated on-load tap changer ( | 2016-05-05 |
| 20160126026 | SWITCH EXTENSION DEVICE AND MOUNTING ASSEMBLY - A switch extension device comprises an elongate extension member and an actuation member. The elongate extension member has a distal end shaped to couple with an electrical switch and a proximal end for positioning remote from the electrical switch. The actuation member is coupleable to the proximal end of the elongate extension member. The actuation member is movable to move the extension member to actuate the electrical switch. Methods of operation are also described. | 2016-05-05 |
| 20160126027 | INTERLOCK ASSEMBLY FOR NETWORK TRANSFORMER PRIMARY DISCONNECT ASSEMBLY - A mechanical interlock assembly for a network transformer primary disconnect assembly is provided. The mechanical interlock assembly includes a blocking member assembly with a body. The a blocking member assembly body includes an obstruction portion and a lacunar portion. The blocking member assembly is movably disposed adjacent to a movable operation contact carriage and a ground contact carriage. The blocking member assembly body is movable between a first position, wherein the blocking member assembly body obstruction portion is disposed in the path of the ground contact carriage, a neutral position, wherein the blocking member assembly body obstruction portion is disposed in the path of the ground contact carriage and the operation contact carriage, and a second position, wherein the blocking member assembly body obstruction portion is disposed in the path of the operation contact carriage. | 2016-05-05 |
| 20160126028 | DOOR INTERLOCK DEVICE FOR VACUUM CIRCUIT BREAKER - The present invention relates to a door interlock device for a vacuum circuit breaker, and more particularly, a door interlock device for a vacuum circuit breaker, which is operable in cooperation with an operation of a cradle shutter. A door interlock device for a vacuum circuit breaker according to one embodiment disclosed herein includes a pressing unit that is provided on one end portion of a shutter lever driving a terminal shutter of a cradle, a driving force transfer unit that is rotatably or slidably installed on a cradle side frame, the driving force transfer unit performing a rotary motion or a sliding motion by a force applied from the pressing unit, and a sliding member that is configured to lock or unlock a door lock plate in response to a driving force transferred from the driving force transfer unit. | 2016-05-05 |
| 20160126029 | NETWORK TRANSFORMER PRIMARY DISCONNECT ASSEMBLY - A housing assembly for a network transformer primary disconnect assembly is provided. The housing assembly includes a visible break assembly and a number of sidewalls defining an enclosed space. The visible break assembly includes a number of viewing windows in at least one sidewall. The viewing windows are aligned with one of a contact assembly interface or a movable contact assembly distal end in the open, first position. | 2016-05-05 |
| 20160126030 | POWER SUPPLY CIRCUIT AND ELECTRONIC EQUIPMENT - A power supply circuit and an electronic equipment, pertaining to the field of electronic circuit, are provided. The power supply circuit includes: a battery, a power management chip and a radio frequency (RF) chip; an output terminal of the battery is connected to at least one input terminal of the power management chip, while the at least one input terminal of the power management chip is individually grounded via a corresponding filter capacitor, respectively; and the output terminal of the battery is also connected to an input terminal of the RF chip via a switching power supply circuit. In the present disclosure, a switching power supply circuit is provided between the output terminal of the battery and the input terminal of the RF chip, thus the noise produced by the ceramic capacitor is substantially eliminated. | 2016-05-05 |
| 20160126031 | Intelligent Electrical Switch - An intelligent electrical switch comprising a conventional mechanical switch connected to a computer system in communication with an external device and receiving instructions therefrom. The switch may be installed in an existing circuit to replace one switch in a multi-way wiring geometry, and includes a sensor detecting current on the neutral line. By determining the circuit state, the switch can determine whether, when instructions are received wirelessly to power the circuit on or off, the mechanical switch element should be toggled. | 2016-05-05 |
| 20160126032 | SWITCH APPARATUS FOR HIGH PRESSURE ENVIRONMENTS AND SYSTEM HAVING THE SAME - A switch apparatus is provided. The switch apparatus includes a switch main body, a switch actuator, a housing and at least one pressure compensator. The switch main body includes multiple of contacts. The switch actuator is coupled with the switch main body and configured to trigger movement of the contacts. The housing accommodates the switch main body and the switch actuator and is filled with insulation fluid. The pressure compensator is in fluid communication with the housing and has a variable volume to regulate pressure inside the housing equal to external pressure surrounding the housing. A system having the switch apparatus is also provided. | 2016-05-05 |
| 20160126033 | ASSEMBLED STRUCTURE AND ELECTRONIC DEVICE INCLUDING SAME - An assembled structure includes a metal plate having a first main surface and a second main surface, and having a through hole, as well as a resin member assembled with the metal plate and disposed on the second main surface side so as to have a portion fitted within the through hole. Assuming that an opening when the through hole is viewed in a plan view has a first width at a point along the opening and a second width measured in parallel to the first width at a point shifted toward the outer side of the opening, a combination of the first width and the second width can be determined such that the second width is larger than the first width. | 2016-05-05 |
| 20160126034 | ELECTRICAL SYSTEM AND OPERATING HANDLE INTERFACE ASSEMBLY THEREFOR - An operating handle interface assembly is for an electrical system. The electrical system includes an enclosure having an interior and an exterior, and a plurality of electrical switching apparatus disposed within the interior. Each of the electrical switching apparatus includes an operating handle. The operating handle interface assembly includes a linking assembly structured to interconnect the operating handles of a plurality of the electrical switching apparatus. An elongated shaft includes opposing first and second ends. The first end cooperates with one of the operating handles of one of the electrical switching apparatus. The second end is disposed on the exterior of the enclosure. A handle attachment is coupled to the second end of the elongated shaft on the exterior of the enclosure. The handle attachment is operable among a plurality of positions to correspondingly operate the operating handles of all of the interconnected electrical switching apparatus. | 2016-05-05 |
| 20160126035 | HYBRID CUTOFF MEMBER FOR AN ELECTRIC CIRCUIT - A hybrid interrupter member for an electrical circuit, the interrupter member including a static interrupter component and an electromechanical interrupter component. The static component is mounted on a support carrying electrical contacts for the static component, the support being configured, on receiving a command to interrupt, to move in such a manner as to withdraw at least one of the electrical contacts from its respective pin, thereby forming the electromechanical interrupter component. | 2016-05-05 |
| 20160126036 | INTERLOCK APPARATUS OF VACUUM CIRCUIT BREAKER - There is provided an interlock apparatus of a vacuum circuit breaker for adjusting withdrawal of a circuit breaker main body, which is installed in a truck and moves to a connected position in which the circuit breaker main body is connected to a cradle and moves to a disconnected position in which the circuit breaker main body is separated from the cradle within the cradle, to outside of the cradle, includes: a lift including a rotation adjusting plate provided on an upper portion thereof, and moving forwardly and backwardly such that the rotation adjusting plate is inserted into the interior of the cradle or separated from the cradle; and an interlock plate provided within the cradle and rotating according to movement of the rotation adjusting plate so as to be tightly attached to the truck or released from the tightly attached state to thereby adjust withdrawal of the circuit breaker main body to the outside of the cradle. | 2016-05-05 |
| 20160126037 | Medium or High Voltage Switch Bushing - A medium or high voltage switch is provided. The medium or high voltage switch includes a bottle assembly and a bushing. The bottle assembly includes a bottle formed of a first material and defining a chamber. The bottle assembly further includes a plurality of contacts for selectively opening and closing an electrical circuit, the plurality of contacts disposed within the chamber. The bushing is formed of a second material and defines a cavity configured to receive the bottle assembly. The bottle assembly and the bushing have an interference fit. | 2016-05-05 |
| 20160126038 | A PORTABLE SINGLE-PHASE AIR BYPASS SWITCH FOR LIVE POWER DISTRIBUTION NETWORK - The present invention provides a portable single-phase air bypass switch for live power distribution network, including a housing member, a positioning member, a conductive circuit member, a clutch member, a switch-closing member and switch-opening member. The housing member includes a main sleeve tube, an insulating sleeve pipe, a flange sleeve, and a bottom cover. The positioning member includes a positioning nut, positioning frames, and a positioning column. The conductive circuit member includes a conductive end cover, an upper conductive rod, a pressing sleeve, a coupling nut, a conductive sleeve pipe, a stationary contact, a movable contact, and a lower conductive rod. The clutch member includes a clutch, a clutch ring, and a clutch sleeve pipe. The switch-closing member includes a switch-closing energy-storage rod, a switch-closing energy-storage ring, a switch-closing spring, a switch-closing positioning pin, a switch-closing release ring, and an inner sleeve pipe. The switch-opening member include a small shaft, a switch-opening spring, a stopping block, a switch-opening energy-storage shaft, a connection rod, a switch-opening energy-storage pressing head, a switch-opening positioning pin, and a switch-opening release ring. The disclosed switch integrates fast-opening and fast-closing functionalities, and solves technical difficulties of instant arc-canceling on unloaded grid lines, power cables and mixed line and bypass line operations, the work coverage in live power distribution network can thus be improved with desired security. | 2016-05-05 |
| 20160126039 | MAGNETICALLY DRIVEN TRIP MECHANISM FOR AN OVERLOAD RELAY - In an overload relay, a tripping actuator | 2016-05-05 |
| 20160126040 | POWER CONTROL DEVICE - A power control device includes a multiple socket-outlet, a power plug and a power supply control circuit. The control circuit includes a power output unit, a first relay and a second relay, a first capacitor, a mechanical switch, an electronic switch and a connector connected to the host of a computer to receive a first voltage. The mechanical switch is turned on to supply power to the multiple socket-outlet, the first relay is closed, the power output unit outputs a working voltage for charging the first capacitor, the electronic switch is turned on, the second relay is closed. If the connector is turned off, the electronic switch is turned off, and the second relay is turned off so that the the multiple socket-outlet is closed. | 2016-05-05 |
| 20160126041 | TRIPPING DEVICE OF CIRCUIT BREAKER - A tripping device of a circuit breaker of the present disclosure may reinforce a magnetic force on a main magnetic flux path using a plurality of magnetic force reinforcing plates without using an additional plate yoke on an actuator provided in the circuit breaker to miniaturize the size of the actuator, thereby having an effect of allowing a control circuit unit provided at an outer portion of the circuit breaker to be installed at an inner portion of the circuit breaker to miniaturize the whole size of the circuit breaker. | 2016-05-05 |
| 20160126042 | CROSSBAR STRUCTURE OF ELECTROMAGNETIC CONTACTOR - Disclosed are a crossbar structure of an electromagnetic contactor, and more particularly, a crossbar structure of an electromagnetic contactor in which consistent performance is made by preventing a moving mount from being flipped. In the crossbar structure of the electromagnetic contactor, the electromagnetic contactor includes a crossbar configured to move up and down and a moving contact point disposed on an installation groove, which is formed on the crossbar in a vertical direction, and brought in contact with or separated from a fixed contact point. In this case, the installation groove includes an insertion part into which the moving contact point is inserted and assemblable and an operating part closely formed enough to prevent the moving contact point from being flipped when the moving contact point moves up and down. | 2016-05-05 |
| 20160126043 | ELECTROMAGNETIC SWITCHING DEVICE - An electromagnetic switching device ( | 2016-05-05 |
| 20160126044 | PIEZOELECTRONIC SWITCH DEVICE FOR RF APPLICATIONS - A piezoelectronic switch device for radio frequency (RF) applications includes a piezoelectric (PE) material layer and a piezoresistive (PR) material layer separated from one another by at least one electrode, wherein an electrical resistance of the PR material layer is dependent upon an applied voltage across the PE material layer by way of an applied pressure to the PR material layer by the PE material layer; and a conductive, high yield material (C-HYM) comprising a housing that surrounds the PE material layer, the PR material layer and the at least one electrode, the C-HYM configured to mechanically transmit a displacement of the PE material layer to the PR material layer such that applied voltage across the PE material layer causes an expansion thereof and an increase the applied pressure to the PR material layer, thereby causing a decrease in the electrical resistance of the PR material layer. | 2016-05-05 |
| 20160126045 | MEMS SWITCH AND METHOD OF MANUFACTURING THE SAME - A microelectromechanical systems (MEMS) switch includes: a signal line disposed on a substrate; a dielectric member attached to the substrate; support fixtures disposed on the substrate at opposing sides of the signal line; and a membrane having ends fixed to the support fixtures, and a protrusion-recess pattern having a corrugated structure, the membrane being configured to change a capacitance provided by the membrane and the dielectric member by being positioned adjacent to the dielectric member through a downward movement. | 2016-05-05 |
| 20160126046 | SUBSEA FUSE ASSEMBLY - A subsea fuse assembly adapted to be operated in a pressurized environment is provided. The subsea fuse assembly includes an enclosure having a first hollow part and a second part which is a rigid supporting wall. The first part of the enclosure is mounted and sealed to the rigid supporting wall such that the first part of the enclosure and the rigid supporting wall enclose a chamber that is sealed in a liquid-tight manner to a surrounding pressurized environment. A fuse element is arranged inside the chamber. A first electrical terminal and a second electrical terminal are arranged in the rigid supporting wall for leading an electrical connection through the supporting wall for electrically contacting the fuse element. The first part of the enclosure includes at least a flexible portion configured to allow the first part of the enclosure to expand and contract to change the volume of the chamber. | 2016-05-05 |
| 20160126047 | MULTI-POLE SWITCH-FUSED ARRANGEMENT FOR BUSBAR SYSTEMS - The present invention relates to a multi-pole fused switch arrangement for busbar systems, with at least two fused switch units, each of which can accommodate a fuse. The fused switch arrangement includes a fuse holder per fused switch unit, a fuse driver unit and a switching lever, wherein the fused switch unit is designed such that it enables the insertion and replacement of fuses in a particularly advantageous manner, and furthermore brings the fuses into their contact position in a particularly advantageous manner. | 2016-05-05 |
| 20160126048 | MULTIPOLAR FUSIBLE LINK - The invention in this application aims to provide a multipolar fusible link in which its lateral width can decrease while its entire height does not increase. A multipolar fusible link ( | 2016-05-05 |
| 20160126049 | BONDING APPARATUS AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING THE SAME - A bonding apparatus bonds one member to another member by using the pressure difference between the pressure between the two members and the ambient pressure. After aligning two members close to each other on a chuck and a supporting member in a vacuum chamber, the chamber is vacuumed to form vacuum between the two members. Then, air is supplied to the vacuum chamber to increase the ambient pressure to normal. The increased ambient pressure pushes the one member on the supporting member to the other member on the chuck, bonding both members together. | 2016-05-05 |
| 20160126050 | VACUUM SWITCHING ASSEMBLY - There is provided a vacuum switching assembly for switching an AC or DC current. The vacuum switching assembly comprises a vacuum switch. The vacuum switch includes: first and second electrodes ( | 2016-05-05 |
| 20160126051 | Metamaterial high-power microwave source - A metamaterial high-power microwave source relates to the fields of vacuum electronic technology, particle physics, and accelerators, including: a cathode, a metamaterial slow-wave structure (SWS), a waveguide and coaxial line coupler located at one end of the metamaterial SWS and a collector component located at the other end of the metamaterial SWS. The metamaterial SWS provided by the present invention is greatly smaller than a rectangular waveguide having the same frequency, so as to realize a miniaturization of devices and facilitate integration with semiconductor devices. The waveguide and coaxial line coupler has a good transmission characteristic and a low reflection in a relatively wide frequency band, which guarantees a high-efficient coupling output of a signal. Moreover, the metamaterial high-power microwave source has a high-power output and a pulsed output power reaching a megawatt level. | 2016-05-05 |
| 20160126052 | System For Fast Ions Generation And A Method Thereof - The present invention discloses a system and method tot generating a beam of fast ions. The system comprising: a target substrate having patterned surface, a pattern comprising nanoscale pattern features oriented substantially uniformly along a common axis; and; a beam unit adapted for receiving a high power coherent electromagnetic radiation beam and providing an electromagnetic radiation beam having a main pulse and a pre-pulse and focusing it onto said patterned surface of the target substrate to cause interaction between said radiation beam and said substrate enabling creation of fast ions. | 2016-05-05 |
| 20160126053 | X-RAY GENERATING TUBE, X-RAY GENERATING APPARATUS, AND RADIOGRAPHY SYSTEM - An X-ray generating tube includes: an anode including a target and an anode member electrically connected to the target; a cathode including an electron emitting source and a cathode member electrically connected to the electron emitting source; and an insulating tube joined at one end to the anode member and joined at the other end to the cathode member so that the target and the electron emitting portion face each other, in which an inner circumferential conductive film is formed on an inner surface of the insulating tube; an end surface conductive film extends from one edge of the inner circumferential conductive film on the one end side onto a surface of the one end of the insulating tube; and the end surface conductive film is sandwiched between the end surface and the anode member to be electrically connected to the anode member. | 2016-05-05 |
| 20160126054 | METHOD AND DEVICE FOR THE REDUCTION OF FLASHOVER-RELATED TRANSIENT ELECTRICAL SIGNALS BETWEEN THE ACCELERATION SECTION OF AN X-RAY TUBE AND A HIGH-VOLTAGE SOURCE - The invention relates to a method for the reduction of flashover-related damage to a testing assembly comprising an X-ray tube with an acceleration section and a high-voltage source. To this end, the invention proposes the use of a special high-voltage resistant cable for the electrically conductive connection of the high-voltage source with the acceleration section. The cable comprises an inner conductor, an electrical insulator surrounding the latter, and a shielding made of an electrically conductive material and enveloping the inner conductor and the insulator. Further, the invention proposes the use of a special high-voltage resistant plug or a special high-voltage resistant socket or suitable combinations of the cable, plug and socket or a testing assembly equipped therewith. The invention permits the reduction of flashover-related damage by an effective absorption of the energy of high-voltage discharge-related transients. | 2016-05-05 |
| 20160126055 | TARGET PROCESSING UNIT - The invention relates to a target processing unit ( | 2016-05-05 |
| 20160126056 | ELECTRON MICROSCOPE SAMPLE HOLDER FOR FORMING A GAS OR LIQUID CELL WITH TWO SEMICONDUCTOR DEVICES - A novel sample holder for specimen support devices for insertion in electron microscopes. The novel sample holder of the invention allows for the introduction of gases or liquids to specimens for in situ imaging, as well as electrical contacts for electrochemical or thermal experiments. | 2016-05-05 |
| 20160126057 | Ion Milling Device - The present invention aims at providing an ion milling apparatus for emitting an ion beam to a sample to process the sample and capable of controlling the temperature of the sample with high accuracy regardless of deformation or the like of the sample being irradiated with the ion beam, and proposes an ion milling apparatus including at least one of a shield holding member for supporting a shield for shielding the sample from the ion beam while exposing a part of the sample to the ion beam; a shifting mechanism for shifting a surface of the sample stand in contact with the sample following deformation of the sample during irradiation with the ion beam, the shifting mechanism having a temperature control mechanism for controlling temperature of at least one of the shield holding member and the sample stand; and a sample holding member disposed between the shield and the sample, the sample holding member deforming following deformation of the sample during irradiation with the ion beam, for example. | 2016-05-05 |
| 20160126058 | Charged-Particle-Beam Device and Specimen Observation Method - An electron microscope has a large depth of focus in comparison with an optical microscope. Thus, information is superimposed on one image in the direction of depth. Therefore, it is necessary to accurately specify the three-dimensional position and density of a structure in a specimen so as to observe the three-dimensional structure of the interior of the specimen by using the electron microscope. Furthermore, a specimen that is observed with the optical microscope on a slide glass is not put into a TEM device of the related art. Thus, performing three-dimensional internal structure observation with the electron microscope on a location that is observed with the optical microscope requires very cumbersome preparation of the specimen. By controlling a vector parameter that defines the interrelationship between a primary charged particle beam and the specimen and by irradiation with the primary charged particle beam with a plurality of different vector parameters, images of transmitted charged particles of the specimen that correspond to each of the vector parameters are obtained. Irradiation with the primary charged particle beam is performed on the specimen that is arranged either directly or through a predetermined member on a detector which detects charged particles transmitted through or scattered by the interior of the specimen. | 2016-05-05 |
| 20160126059 | METHOD FOR COINCIDENT ALIGNMENT OF A LASER BEAM AND A CHARGED PARTICLE BEAM - A method and apparatus for aligning a laser beam coincident with a charged particle beam. The invention described provides a method for aligning the laser beam through the center of an objective lens and ultimately targeting the eucentric point of a multi-beam system. The apparatus takes advantage of components of the laser beam alignment system being positioned within and outside of the vacuum chamber of the charged particle system. | 2016-05-05 |
| 20160126060 | ENDPOINTING FOR FOCUSED ION BEAM PROCESSING - To expose a desired feature, focused ion beam milling of thin slices from a cross section alternate with forming a scanning electron image of each newly exposed cross section. Milling is stopped when automatic analysis of an electron beam image of the newly exposed cross section shows that a pre-determined criterion is met. | 2016-05-05 |
| 20160126061 | DRAWING APPARATUS AND DEVICE MANUFACTURING METHOD - In at least one embodiment, a control unit of a drawing apparatus determines a distance by which the drawing apparatus causes a stage to move in a direction parallel to an arranging direction of a plurality of shot regions, in such a manner that a plurality of shot regions includes a shot region including a drawing region in which drawing processing by at least one first charged particle beam is able to be performed and also drawing processing by at least one second charged particle beam is able to be performed. The control unit controls a drawing operation of a first charged particle optical system and a drawing operation of a second charged particle optical system to use either the at least one first charged particle beam or the at least one second charged particle beam to perform drawing processing in the shot region including the drawing region. | 2016-05-05 |
| 20160126062 | DRAWING APPARATUS, LITHOGRAPHY SYSTEM, PATTERN DATA CREATION METHOD, DRAWING METHOD, AND METHOD OF MANUFACTURING ARTICLES - At least one drawing apparatus according to an exemplary embodiment includes a plurality of optical systems and repeats an operation to draw a pattern on a substrate while partly overlapping stripe-shaped regions drawn by the optical systems. The drawing apparatus includes a creation unit configured to create data to be supplied to each of the plurality of optical systems by using a plurality of sub pattern data, each of the plurality of sub pattern data serving as unit data of pattern data used by the plurality of optical systems, corresponding to a region having a width obtainable by dividing the stripe-shaped regions in a drawing width direction, and including information relating to continuity of drawing instruction data and exposure amount information. The creation unit is configured to create the data by changing exposure amount information corresponding to an overlapping drawing region based on the information relating to the continuity. | 2016-05-05 |
| 20160126063 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a plasma generation unit configured to convert a processing gas supplied into a processing chamber into plasma by an inductive coupling. The plasma generation unit includes a first high frequency antenna formed of a vortex coil arranged adjacent to the processing chamber through a dielectric window, a second high frequency antenna having a natural resonant frequency and formed of a vortex coil arranged at an outer or inner peripheral side of the first high frequency antenna, and an impedance adjustment unit for adjusting a resonant frequency of a circuit viewed from the high frequency power supply toward the first high frequency antenna. The circuit viewed from the high frequency power supply toward the first high frequency antenna is configured to have two resonant frequencies depending on adjustment of the impedance adjustment unit when a frequency of high frequency power is changed. | 2016-05-05 |
| 20160126064 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a high frequency antenna having first and second antenna elements. One end of the first antenna element is grounded and the other end thereof is connected to a high frequency power supply. One end of the second antenna element is an open end and the other end thereof is connected to either one of the one end and the other end of the first antenna element, a line length of the second antenna element having a value obtained by multiplying ((λ/4)+nλ/2) by a fractional shortening (λ is a wavelength of high frequency in vacuum and n is a natural number). A circuit viewed from the high frequency power supply toward the high frequency antenna is configured to generate, when a frequency of a high frequency power is changed, two resonant frequencies by an adjustment of the impedance adjustment unit. | 2016-05-05 |
| 20160126065 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a plasma generation unit for converting a processing gas into plasma by an inductive coupling. The plasma generation unit includes a first high frequency antenna formed of a vortex coil having open opposite endse and, at a central portion of a line between the open ends, a supply point of a high frequency power and a grounding point grounded through a capacitor; a second high frequency antenna formed of a planar vortex coil disposed between first and second high frequency antenna elements of the first high frequency antenna; and an impedance adjustment unit for adjusting a resonant frequency of a circuit viewed from a high frequency power supply toward the first high frequency antenna which is configured to have two resonant frequencies depending on adjustment of the impedance adjustment unit when the frequency of the high frequency power is changed. | 2016-05-05 |
| 20160126066 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing container that defines a processing space, a gas supply unit provided on a sidewall of the processing container and configured to supply gas to the processing space, a dielectric member having a facing surface that faces the processing space, and an antenna provided on a surface opposite to the facing surface of the dielectric member and configured to radiate microwaves that turn the gas into plasma to the processing space through the dielectric member. The gas supply unit includes a transport hole transporting the gas to a position where the gas does not reach the processing space in the inside of the sidewall of the processing container and an injection hole communicated to the transport hole and configured to inject the gas transported to the position into the processing space. The injection hole has a diameter larger than that of the transport hole. | 2016-05-05 |
| 20160126067 | PLASMA PROCESSING APPARATUS - A resonance frequency is adjusted or optimized by shifting the resonance frequency without reducing an impedance function or a withstand voltage characteristic against a high frequency noise, when blocking, by using a multiple parallel resonance characteristic of a distributed constant line, the high frequency noise introduced into a line such as a power feed line or a signal line from an electrical member other than a high frequency electrode within a processing vessel. Regarding winding pitches, each of the solenoid coils | 2016-05-05 |
| 20160126068 | DIAGNOSIS SYSTEM FOR PULSED PLASMA - A diagnosis system for pulsed plasma includes an optical emission sensor (OES) to receive light generated the pulsed plasma, the pulsed plasma having been generated in accordance with a pulse signal, a digitizer to synchronize the electrical signal with the pulse signal, and an analyzer to analyze the synchronized electrical signal. | 2016-05-05 |
| 20160126069 | PULSE PLASMA APPARATUS AND DRIVE METHOD THEREOF - A pulse plasma apparatus includes a process chamber, source RF generator configured to supply first and second level RF pulse power having first and second duty cycles to an upper electrode of the process chamber, a reflected power indicator configured to indicate reflection RF power, a first matching network, and a controller. The first matching network is configured to match an impedance of the process chamber with an impedance of the source RF generator as a first or second matching capacitance value, respectively when the first level RF pulse power or second level RF pulse power is supplied, respectively. The controller is configured to calculate a third matching capacitance value based on the first and second matching capacitance values and a ratio of the first and second duty cycles, provide the third matching capacitance values to the first matching network, and control the source RF generator and first matching network. | 2016-05-05 |
| 20160126070 | Arrangements for Manipulating Plasma Confinement Within a Plasma Processing System and Methods Thereof - Methods for controlling bevel etch rate of a substrate during plasma processing within a processing chamber includes securing the substrate on a lower electrode within the processing chamber. A power source is provided. A gas mixture is flowed into the processing chamber. A first match arrangement coupled to an upper electrode is adjusted to control current flowing through the upper electrode to change the upper electrode from a grounded state to a floating state. A second match arrangement coupled to a top ring electrode is adjusted to control current flowing through the top ring electrode so as to control plasma formed above a top edge of the substrate. An extension of the upper electrode is lowered during plasma processing so as to minimize a gap between the extension of the upper electrode and the substrate received on the lower electrode, such that the gap is incapable of supporting plasma formed in the processing chamber. | 2016-05-05 |
| 20160126071 | METHOD OF ETCHING ORGANIC FILM - An organic film can be etched while suppressing damage on an underlying layer. A method of etching the organic film includes etching the organic film within a processing vessel of a plasma processing apparatus which accommodates a processing target object. A processing gas containing a hydrogen gas and a nitrogen gas is supplied into the processing vessel, and plasma of the processing gas is generated. Further, a flow rate ratio of the hydrogen gas to a flow rate of the processing gas is set to be in a range from 35% to 75%, and a high frequency bias power for ion attraction to the processing target object is set to be in a range from 50 W to 135 W, in the etching of the organic film. | 2016-05-05 |
| 20160126072 | Sputtering Target And Method For Production Thereof - A sputtering target according to the disclosure includes 5 wtppm to 10,000 wtppm of Cu and the balance of In and has a relative density of 99% or more and an average grain size of 3,000 μm or less. | 2016-05-05 |
| 20160126073 | PATHOLOGY INTERFACE SYSTEM FOR MASS SPECTROMETRY - A diagnostic system and method that includes a non-transitory computer readable medium storing machine executable instructions executable by the processor for altering tissue images, the instructions that further includes an input interface configured to receive a plurality of tissue images, the input interface generating enhanced resolution images from the plurality of tissue images for viewing, an annotation interface for positioning coordinates of interest on the enhanced resolution images, and a matrix model configured to evaluate the coordinates of interest on the enhanced resolutions to generate discrete coordinates, the matrix model using the discrete coordinates in performing mass spectrometer analysis to form at least one viewing image. The system also includes a user interface configured to provide at least one viewing image to a user at the display. | 2016-05-05 |
| 20160126074 | Method of Calibrating Ion Signals - A method of mass or ion mobility spectrometry is disclosed comprising: providing an ion source for generating analyte ions and reference ions; providing a mass analyser or ion mobility separator (IMS); providing an ion trap between the ion source and the mass analyser or IMS; guiding reference ions from the ion source into the ion trap and trapping the reference ions in the ion trap; guiding the analyte ions from the ion source into the mass analyser or IMS, wherein the analyte ions bypass the ion trap; and releasing reference ions from the ion trap into the mass analyser or IMS for analysis. | 2016-05-05 |
| 20160126075 | MASS SPECTROMETRY METHOD FOR MEASURING VITAMIN B6 IN BODY FLUIDS - Provided are methods of detecting the presence or amount of the active form of vitamin B6, pyridoxal 5′-phosphate, in a body fluid sample using tandem mass spectrometry coupled with liquid chromatography. | 2016-05-05 |
| 20160126076 | Inline Ion Reaction Device Cell and Method of Operation - A method and apparatus for conducting ion to charged species reactions, more particularly reactions wherein the charged species is an electron, such as ECD. The apparatus comprises first and second pathways which are orthogonal to one another. The first pathway through which ions are introduced comprises multiple multipoles with a gap situated there between. The second pathway introduces the charged species through the gap orthogonally to the first pathway. In this way, a cross-type reaction device allows ion-charged species interactions to occur. | 2016-05-05 |
| 20160126077 | Method and Apparatus for Reacting Ions - A method of mass spectrometry is disclosed having a mode comprising: providing a source of precursor ions and reagent ions for reacting with said precursor ions; providing a reaction region downstream of said source; providing an ion mobility separator between said source and said reaction region; providing a bypass cell between said source and said reaction region for guiding ions from said source to said reaction region without the ions passing through said ion mobility separator; guiding said precursor ions from said source, through said ion mobility separator so that said precursor ions separate according to their ion mobility and into said reaction region; and guiding said reagent ions from said source, through said bypass cell and into said reaction region; wherein the reagent ions react with the precursor ions within the reaction region to produce product ions. | 2016-05-05 |
| 20160126078 | INTEGRATED MASS SPECTROMETRY SYSTEMS - The disclosure features mass spectrometry systems that include: an ion source; a module featuring an ion trap, an ion detector, and a module housing that at least partially surrounds the ion trap and the ion detector; and a vacuum pump featuring a housing having a recess dimensioned to receive the module, so that when the module is positioned within the recess of the vacuum pump housing, a portion of the module is surrounded by the vacuum pump housing, and during operation of the system, the ion source, ion trap, ion detector, and vacuum pump are connected along a common gas flow path and heat is transferred from the vacuum pump to the module. | 2016-05-05 |
| 20160126079 | Method and Device for Ionizing Particles of a Sample Gas Flow - A device for ionizing sample particles of a sample gas flow comprises a first flow tube for providing the sample gas flow, and an introducing means for providing H | 2016-05-05 |
| 20160126080 | SYSTEM AND METHOD FOR LIQUID EXTRACTION ELECTROSPRAY-ASSISTED SAMPLE TRANSFER TO SOLUTION FOR CHEMICAL ANALYSIS - A system for sampling a surface includes a surface sampling probe comprising a solvent liquid supply conduit and a distal end, and a sample collector for suspending a sample collection liquid adjacent to the distal end of the probe. A first electrode provides a first voltage to solvent liquid at the distal end of the probe. The first voltage produces a field sufficient to generate electrospray plume at the distal end of the probe. A second electrode provides a second voltage and is positioned to produce a plume-directing field sufficient to direct the electrospray droplets and ions to the suspended sample collection liquid. The second voltage is less than the first voltage in absolute value. A voltage supply system supplies the voltages to the first electrode and the second electrode. The first electrode can apply the first voltage directly to the solvent liquid. A method for sampling for a surface is also disclosed. | 2016-05-05 |
| 20160126081 | APPARATUS FOR CHARGING OR ADJUSTING THE CHARGE OF AEROSOL PARTICLES - The invention provides an apparatus for charging or altering the charge of gas-entrained particles in an aerosol, the apparatus comprising: | 2016-05-05 |
| 20160126082 | MASS ANALYZING ELECTROMAGNET AND ION BEAM IRRADIATION APPARATUS - A mass analyzing electromagnet is provided. The mass analyzing electromagnet includes an analysis tube having an internal zone formed as a passage for the ion beam; and
| 2016-05-05 |
| 20160126083 | Method of Generating Electric Field for Manipulating Charged Particles - A device for manipulating charged particles using an axial electric field as they travel along a longitudinal axis of the device is disclosed. The method comprises providing an outer electrode for generating an electric field and providing a plurality of inner electrodes that are separated by gaps of different lengths. The electric field generated by the outer electrode penetrates the gaps between the inner electrodes and the gaps are selected such that the desired potential profile is arranged along the longitudinal axis in order to manipulate the charged particles in the desired manner. | 2016-05-05 |
| 20160126084 | Method of producing a halogen lamp and halogen lamp - The present invention relates to a method for producing a halogen lamp, comprising the following steps: providing a glass tube blanket; dip-coating of the glass tube blanket using a sol gel process having an inorganic coating; forming a lamp bulb from the coated glass tube blanket. The present invention relates further to a halogen lamp produced accordingly. | 2016-05-05 |
| 20160126085 | METHOD AND DEVICE FOR TREATING A SUBSTRATE SURFACE - A method for treatment of a substrate surface of a substrate by applying a liquid to the substrate surface, the liquid which has been applied to the substrate surface being heated by a heating area which is located above the substrate surface, wherein the temperature of the liquid is kept constant by moving the heating area up and down. Furthermore the invention relates to a corresponding device. | 2016-05-05 |
| 20160126086 | NON-PLANAR SEMICONDUCTOR DEVICE WITH ASPECT RATIO TRAPPING - As disclosed herein, a semiconductor device with aspect ratio trapping is provided, including a bulk substrate, a plurality of isolation pillars formed on the bulk substrate, wherein one or more gaps are formed between the isolation pillars, an oxide layer formed by epitaxy on the bulk substrate, between the isolation pillars, wherein the oxide layer partially fills the gaps between the isolation pillars, one or more fins formed over the oxide layer between the isolation pillars, such that the one or more fins fill the gaps between the isolation pillars, wherein the oxide layer electrically isolates the one or more fins from the bulk substrate. The oxide layer has an aspect ratio that is selected to substantially eliminate defects at the interface between the oxide layer and the fins. The semiconductor device may also include a semiconductor layer between the bulk substrate and oxide layer. | 2016-05-05 |
| 20160126087 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device according to an embodiment includes forming an opening in a surface of an insulating layer which is provided in a surface of a first substrate and a surface of a second substrate. The method includes filling the opening with metal. The method includes activating the surface of the insulating layer. The method includes cleaning the surface of the metal filled in the opening of the first substrate using carbonated water. The method includes connecting the filled metal of the first substrate and the filled metal of the second substrate by bonding the insulating layer of the first substrate and the insulating layer of the second substrate. | 2016-05-05 |
| 20160126088 | METHOD OF PRODUCING LAYER STRUCTURE, LAYER STRUCTURE, AND METHOD OF FORMING PATTERNS - A method of producing a layer structure includes forming a first organic layer by applying a first composition including an organic compound on a substrate having a plurality of patterns, applying a solvent on the first organic layer to remove a part of the first organic layer, and applying a second composition including an organic compound on a remaining part of the first organic layer and forming a second organic layer through a curing process. | 2016-05-05 |
| 20160126089 | FLOWABLE FILM CURING PENETRATION DEPTH IMPROVEMENT AND STRESS TUNING - Methods for depositing and curing a flowable dielectric layer are disclosed herein. Methods can include forming a flowable dielectric layer, immersing the flowable dielectric layer in an oxygen-containing gas, purging the chamber and curing the layer with UV radiation. By curing the layer after an oxygen-containing gas pre-soak, the layer can be more completely cured during the UV irradiation. | 2016-05-05 |
| 20160126090 | Method for Processing a Semiconductor Wafer Using a Thin Edge Carrier Ring - A method for processing a semiconductor wafer in a PECVD deposition chamber with a circular pedestal and a recessed portion formed around the outer top surface of the pedestal. The method may include using a circular wafer carrier ring with a recessed portion. | 2016-05-05 |
| 20160126091 | CLEANING PROCESS FOR OXIDE - A cleaning process for oxide includes the following step. A substrate having a first area and a second area is provided. A first oxide layer is formed on the substrate of the first area and the second area. An ammonium hydroxide (NH | 2016-05-05 |
| 20160126092 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE - On a silicon carbide semiconductor substrate, heat treatment is performed after one layer or two or more layers of an oxide film, a nitride film, or an oxynitride film are formed as a gate insulating film. The heat treatment after the gate insulating film is formed is performed for a given period in an atmosphere that includes H | 2016-05-05 |
| 20160126093 | METHOD TO GROW THIN EPITAXIAL FILMS AT LOW TEMPERATURE - Implementations of the present disclosure generally relate to methods for epitaxial growth of a silicon material on an epitaxial film. In one implementation, the method includes forming an epitaxial film over a semiconductor fin, wherein the epitaxial film includes a top surface having a first facet and a second facet, and forming an epitaxial layer on at least the top surface of the epitaxial film by alternatingly exposing the top surface to a first precursor gas comprising one or more silanes and a second precursor gas comprising one or more chlorinated silanes at a temperature of about 375° C. to about 450° C. and a chamber pressure of about 5 Torr to about 20 Torr. | 2016-05-05 |
| 20160126094 | LATTICE MATCHED ASPECT RATIO TRAPPING TO REDUCE DEFECTS IN III-V LAYER DIRECTLY GROWN ON SILICON - A structure having application to electronic devices includes a III-V layer having high crystal quality and a low defect density on a lattice mismatched substrate. Trenches are formed in a layer of III-V semiconductor material grown on a substrate having a different lattice constant. Dielectric material is deposited within the trenches, forming dielectric regions. A portion of the layer of III-V material is removed, leaving new trenches defined by the dielectric regions. A new layer of III-V semiconductor material having reduced defect density is grown on the remaining portion of the originally deposited III-V semiconductor layer and within the trenches defined by the dielectric regions. | 2016-05-05 |
| 20160126095 | METHOD FOR DETERMINING PREFERENTIAL DEPOSITION PARAMETERS FOR A THIN LAYER OF III-V MATERIAL - First, second and third series of samples are successively made so as to determine the influence of the deposition parameters on the crystallographic quality of a layer of semiconductor material of III-V type. The parameters studied are successively the deposition pressure, the deposition temperature and the deposited thickness of a sub-layer of semiconductor material of III-V type so as to respectively determine a first deposition pressure, a first deposition temperature at the first deposition pressure, and a first deposited thickness at the first deposition temperature and at the first deposition pressure. The sub-layer of semiconductor material of III-V type is thickened by ways of a second layer of semiconductor material of III-V type deposited under different conditions. | 2016-05-05 |
| 20160126096 | METHOD OF FORMING AN EPITAXIAL LAYER ON A SUBSTRATE, AND APPARATUS AND SYSTEM FOR PERFORMING THE SAME - In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution. | 2016-05-05 |
| 20160126097 | DIELECTRIC TONE INVERSION MATERIALS - A process for patterning a hard mask material with line-space patterns below a 30 nm pitch and a 15 nm critical dimension by employing a spin-on titanium-silicon (TiSi) polymer or oligomer as a tone inversion material is provided. The spin-on TiSi material is spin-coated over a patterned OPL that includes a first pattern generated from a DSA based process. The spin-on TiSi material fill trenches within the patterned OPL to form a tone inverted pattern by removing the patterned OPL selective to the spin-on TiSi material. The inverted pattern is a complementary pattern to the first pattern, and is transferred into the underlying hard mask material by an anisotropic etch. | 2016-05-05 |
| 20160126098 | SYSTEM AND APPARATUS FOR EFFICIENT DEPOSITION OF TRANSPARENT CONDUCTIVE OXIDE - A substrate processing system that includes a substrate processing chamber having one or more sidewalls that at least partially define a substrate processing region and extend away from a bottom wall of the substrate processing chamber at an obtuse angle; a source material holder configured to hold a source material within the substrate processing region; a plasma gun operatively coupled to introduce a plasma beam into the substrate processing region; one or more magnets operatively arranged to generate a magnetic field that guides the plasma beam to the source material holder; and a substrate carrier configured to hold one or more substrates within the substrate processing region. | 2016-05-05 |
| 20160126099 | SILICON-BASED SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A silicon-based substrate on which a nitride compound semiconductor layer is formed on a front surface thereof, including a first portion provided on the front surface side which has a first impurity concentration and a second portion provided on an inner side of the first portion which has a second impurity concentration higher than the first impurity concentration, wherein the first impurity concentration being 1×10 | 2016-05-05 |
| 20160126100 | SEMICONDUCTOR DEVICE WITH EQUIPOTENTIAL RING CONTACT AT CURVED PORTION OF EQUIPOTENTIAL RING ELECTRODE AND METHOD OF MANUFACTURING THE SAME - A downsized semiconductor device having an excellent reverse characteristic, and a method of manufacturing the semiconductor device is sought to improve. The semiconductor device comprises a semiconductor body having a polygonal contour. An active area is formed in the semiconductor body. An EQR electrode is formed so as to surround the active area and to have curved portions of the EQR electrode along the corners of the semiconductor body. An interlayer insulating film is formed to cover the active area and the EQR electrode. The EQR electrode is embedded in the interlayer insulating film around the active area. EQR contacts are in contact with the curved portions of the EQR electrode and the semiconductor body outside the curved portions, and have at least side walls covered with the interlayer insulating film. | 2016-05-05 |
| 20160126101 | METHOD FOR FORMING A VARIABLE THICKNESS DIELECTRIC STACK - Producing a variable thickness dielectric stack includes providing a substrate with a first patterned conductive layer thereon. A first dielectric thin film is deposited using ALD and a first patterned deposition inhibitor layer, which is subsequently removed, to form a first patterned conformal dielectric layer having a first pattern. A second dielectric thin film is deposited using ALD and a second patterned deposition inhibitor layer to form a second patterned conformal dielectric layer having a second pattern. A second patterned conductive layer is formed with at least a portion of the first and second patterned conductive layers overlapping each other forming an overlap region. A portion of the first or second pattern extends into the overlap region such that one portion of the overlap region includes the first and second dielectric thin films, and another portion of the overlap region includes only the first or second dielectric thin film. | 2016-05-05 |
| 20160126102 | DIRECTIONAL PRE-CLEAN IN SILICIDE AND CONTACT FORMATION - A method includes etching a dielectric layer to form an opening, with an underlying region underlying the dielectric layer exposed to the opening, and performing a bombardment to bombard a surface region of the underlying region through the opening. After the bombardment, the surface region is reacted with a process gas to form a reaction layer. An anneal is then performed to remove the reaction layer. | 2016-05-05 |
