18th week of 2011 patent applcation highlights part 52 |
Patent application number | Title | Published |
20110104777 | Method of making an artificial micro-gland that is anisotropic - A method is disclosed for making an artificial micro-gland having a continuous anisotropic membrane of two or more types of living cells. A first step includes forming a carrier fluid in a microchannel in a laminar flow of two distinct fluid flows. Another step includes introducing a template, which may itself be anisotropic, into the microchannel in a manner such that the template straddles the interface between the first fluid-flow and the second fluid-flow. In some embodiments two types of living cells within the template are separately attracted one of the fluid flows by the presence of an agent of taxis. In other embodiments, cells within one or the other of the fluid flows are attracted to agents within the template. Membranes form on the template and join together to form a complete cellular membrane around a reservoir. | 2011-05-05 |
20110104778 | Method for Magnetic Separation of Red Blood cells from a Patient Sample - A method for separating components from a patient sample is provided. In particular, the present invention provides a method for the separation of red blood cells or red blood cell components from a patient sample by the use of magnetic beads. | 2011-05-05 |
20110104779 | Heat-stable carbonic anhydrases and their use - The present invention relates to use of heat-stable carbonic anhydrase in CO | 2011-05-05 |
20110104780 | ENCAPSULATION OF LIVING CELLS WITHIN AN AEROSOLIZED SOL-GEL MATRIX - A method of encapsulating a population of cells in a porous matrix is disclosed. The method comprises the steps of providing a silica sol mixture, aerosolizing the silica sol mixture to form a silica sol vapor, and coating the cell population with the silica sol vapor, wherein the vapor condenses to form a sol-gel matrix encapsulating the cell population. | 2011-05-05 |
20110104781 | ISOLATED PHOSPHOLIPID-PROTEIN PARTICLES - Systems and methods are provided for producing a protein of interest that is typically not amenable to expression in soluble form in in vitro expression systems. In some aspects, the invention provides methods of synthesizing proteins using in vitro protein synthesis systems that include a scaffold protein such as apolipoprotein or an amphipathic alpha helix containing (“AAHC”) protein, in which higher yields of soluble protein are produced than in the absence of the scaffold protein. The scaffold proteins may be provided in an in vitro protein synthesis system associated with lipid or not associated with lipid. The scaffold protein may be provided as a protein per se or may be encoded by a nucleic acid template and co-expressed with the protein of interest. The invention also provides compositions and kits for synthesis of proteins in soluble form, in which the compositions and kits include cell extracts for protein expression and isolation. | 2011-05-05 |
20110104782 | CRYSTAL STRUCTURE OF AURORA-2 PROTEIN AND BINDING POCKETS THEREOF - The present invention provides crystalline molecules or molecular complexes which comprise binding pockets of Aurora-2 or its homologues. The invention also provides crystals comprising Aurora-2. The present invention also relates to a computer comprising a data storage medium encoded with the structural coordinates of Aurora-2 binding pockets and methods of using a computer to evaluate the ability of a compound to bind to the molecule or molecular complex. This invention also provides methods of using the structure coordinates to solve the structure of homologous proteins or protein complexes. In addition, this invention provides methods of using the structure coordinates to screen for and design compounds, including inhibitory compounds, that bind to Aurora-2 or homologues thereof. | 2011-05-05 |
20110104783 | STEREOISOMER PEPTIDES, LIGAND-TARGETED MULTI- STEREOISOMER PEPTIDE POLYMER CONJUGATES, AND USES THEREOF - The invention provides compounds of the formula Poly-([SP-LI]n-PL-L2) including a collection of 152 peptides useful to create the compounds, and their uses thereof for the treatment of a variety of mammalian diseases. The compound, a novel ligand-targeted multi-stereoisomer peptide polymer conjugate, comprises two or more stereoisomer peptides and a peptide-ligand conjugated via linkers to a biocompatible hydrophilic polymer, preferably HPMA. The increased stability and solubility of the compound carrying the stereoisomer peptides and a peptide-ligand provide ideal pharmaceutical properties including the delivery by the polymer of the peptides into the target cells. The compounds of the invention are useful therapeutics for the treatment of a variety of mammalian diseases. Examples of such diseases in human patients include abnormal angiogenesis, pathological conditions of the eye, cancer, metastasis, diabetes, Alzheimer's and Parkinson's diseases, brain and neurodegenerative disorders, bipolar disorder, and diseases caused by aging and pathogen agents, to name a few. | 2011-05-05 |
20110104784 | Methods for Storing Compositions Useful for Synthesizing Nucleic Acid Molecules - In one aspect, the present invention provides methods for storing a composition useful for synthesizing nucleic acid molecules. The methods of this aspect of the invention include the steps of: (a) freezing multiple aliquots of a liquid composition comprising from 1000 units/mL to 5000 units/mL of a reverse transcriptase, or from 10,000 units/mL to 50,000 units/mL of an RNA polymerase, wherein the multiple aliquots of the liquid composition are disposed within multiple receptacles defined by a container body; and (b) a step selected from the group consisting of (1) storing the frozen aliquots at a temperature below −15° C., and (2) drying the frozen aliquots to produce dried aliquots of the composition, wherein each dried aliquot of the composition comprises an amount of water that is less than 0.1% by weight of the dried aliquot, and storing the dried aliquots at a temperature below −15° C. | 2011-05-05 |
20110104785 | METHODS AND KITS FOR 3'-END-TAGGING OF RNA - The present innovation provides methods and kits that enable rapid and efficient dual end-tagging of RNA to prepare libraries for analysis by applications such as next-generation RNA sequencing, qPCR, microarray analysis, or cloning. The methods do not require time-consuming and inefficient gel-purification steps that are common to methods known in the art. In addition, the present invention provides methods and kits for rapid, high-throughput enzymatic preparation of 5′-activated, 3′-blocked DNA oligonucleotides from standard, single-stranded DNA oligonucleotides. | 2011-05-05 |
20110104786 | USE AND PRODUCTION OF NEUTRAL METALLOPROTEASES IN A SERINE PROTEASE-FREE BACKGROUND - The present invention provides methods and compositions comprising at least one neutral metalloprotease enzyme in the relative absence of serine protease enzyme contaminants. In some embodiments, the neutral metalloprotease finds use in cleaning and other applications. In some particularly preferred embodiments, the present invention provides methods and composi-tions comprising | 2011-05-05 |
20110104787 | Fusion Peptides That Bind to and Modify Target Nucleic Acid Sequences - Novel methods and compositions for altering target nucleic acid (e.g., DNA e.g., genomic DNA) sequences are provided. Fusion proteins including one or more DNA binding domains and one or more DNA modifying domains are provided. Isolated polynucleotides encoding fusion proteins including one or more DNA binding domains and one or more DNA modifying domains are provided. | 2011-05-05 |
20110104788 | Modulation of Adenoviral Tropism - The invention provides materials and methods for modulating adenoviral tropism for hepatocytes and other cell types such as splenocytes. It relates to the findings that hypervariable regions (HVRs) of the viral hexon protein interact with the Gla domain of the blood clotting factor FX as part of the infective process in vivo. The invention provides means to disrupt the interaction between hexon and FX, thus reducing infection of hepatocytes and splenocytes, as well as use of targeting agents comprising the Gla domain or a fragment thereof to direct adenoviral vectors to desired target cell or tissue types. | 2011-05-05 |
20110104789 | NON-INTEGRATING REV-DEPENDENT LENTIVIRAL VECTOR AND METHODS OF USING THE SAME - Non-integrating, Rev-dependent (NIRD) lentiviral vectors and NIRD lentiviral particles carrying a therapeutic gene, such as DT-A or TRAF6 and methods of making the same are disclosed. The intracellular expression of DT-A or TRAF6 results in the selective killing of HIV-positive cells and, thus, these NIRD lentiviral vectors and lentiviral particles can be used in methods to kill HIV-infected cells or treat to HIV-infected subjects. Also disclosed is a human cell line comprising a mutation in the EF2 gene that confers resistance to DT-A. | 2011-05-05 |
20110104790 | PHOTOBIOREACTOR SYSTEM AND METHOD OF USING THE SAME - A photobioreactor assembly, including a first generally horizontal manifold, a second generally horizontal manifold positioned below the first generally horizontal manifold, an array of generally parallel, generally transparent tubes extending between the manifolds, an air supply operationally connected to at least one manifold, a water filter, a water purifier, a water supply operationally connected to the water purifier, a pH sensor positioned to measure the pH in the array, and an electronic controller operationally connected to the pH sensor, the air supply, the water purifier, and the water supply. Each respective tube is connected in fluidic communication with the first horizontal manifold, and each respective tube is connected in fluidic communication with the second horizontal manifold. | 2011-05-05 |
20110104791 | Media and Process for Culturing Algae - The present invention is directed towards curtailing the use of harsh saline atmosphere and producing algal biomass free from salinity. It provides a salinity free medium and a process for culturing and producing algal biomass preferably | 2011-05-05 |
20110104792 | LOW-TEMPERATURE SOLIDIFICATION OF RADIOACTIVE AND HAZARDOUS WASTES - Treatment of a radioactive waste stream is provided by adding sodium hydroxide (NaOH) and/or potassium hydroxide (KOH) together with a rapidly dissolving form of silica, e.g., fumed silica or fly ash. Alternatively, the fumed silica can be first dissolved in a NaOH/KOH solution, which is then combined with the waste solution. Adding a binder that can be a mixture of metakaolin (Al | 2011-05-05 |
20110104793 | DEVICE FOR APPLYING ELECTROMAGNETIC ENERGY TO A REACTIVE MEDIUM - The invention relates to a device ( | 2011-05-05 |
20110104794 | APPARATUS FOR PERFORMING BIOCHEMICAL PROCESSING USING CONTAINER HAVING WELLS - A biochemical processing apparatus includes a thermal cycle section, a processing section for performing a processing not requiring heating or cooling, and a cooling section. These sections are arranged in that order and opposed to a container with a plurality of wells. | 2011-05-05 |
20110104795 | Compost Turning and Aerating Machine - A compost windrow turning machine disintegrates an existing windrow of compost material, conveys the disintegrated material rearwardly, aerates the rearwardly conveyed material with a positive displacement of air into the rearwardly conveyed compost material, and re-forms a new windrow of remixed and aerated compost material rearwardly of the machine in line with the original windrow. The disintegration of the original compost windrow is accomplished with a rotor having segmented teeth arranged in a spiral to shred the original compost material and convey the disintegrated material to a central chain and slat conveyor positioned behind the rotor. A positive displacement of air is injected into the compost material on the central conveyor by a pair of laterally disposed fans mounting in conduits angled inwardly toward the central conveyor. The discharge of material off the central conveyor is passed through a set of windrow-forming shields to create a new windrow. | 2011-05-05 |
20110104796 | PHOTOBIOREACTOR - A photobioreactor system including a light source, a plurality of interconnected pipes, and a liquid slurry containing an algae disposed within the pipes. The pipes are formed from a translucent polyvinyl chloride material that allows light having a plurality of wavelengths emitted from the light source that stimulate growth of the algae to pass through the material and is resistant to light having a wavelengths emitted from the light source that degrade the material. | 2011-05-05 |
20110104797 | Arrangement for transport and/or safekeeping of a human or animal tissue sample - An arrangement far the transport and/or safekeeping of a human or animal tissue sample | 2011-05-05 |
20110104798 | Compliant Surface Multi-Well Culture Plate - A multi-well plate can be loaded with a range of compliant substrates. Commerically-available assays can be used to test cellular responses across a plate with shear modulus from 50 to 51200 Pascals. Cells can be grown in the plates, and can be manipulated and analyzed. Hydrogels can be attached to the bottom of a well. The plates can support the attachment and growth of different cell types and can be compatible with standard 96-well and 384-well plate assays. The mechanical properties of the hydrogels can be reproducible and stable to increase the shelf life of the substrate. The hydrogel can be compatible with growth of a variety of cell types, various attachment ligands such as collagen I, collagen IV, fibronectin, vitronectin, laminin, or RGD peptides and can be coupled to the gel surface. | 2011-05-05 |
20110104799 | Multifunctional Alleles - Nucleic acid constructs and methods for rendering modifications to a genome are provided, wherein the modifications comprise null alleles, conditional alleles and null alleles comprising COINs. Multifunctional alleles (MFA) are provided, as well as methods for making them, which afford the ability in a single targeting to introduce an allele that can be used to generate a null allele, a conditional allele, or an allele that is a null allele and that further includes a COIN. MFAs comprise pairs of cognate recombinase recognition sites, an actuating sequence and/or a drug selection cassette, and a nucleotide sequence of interest, and a COIN, wherein upon action of a recombinase a conditional allele with a COIN is formed. In a further embodiment, action of a second recombinase forms an allele that contains only a COIN in sense orientation. In a further embodiment, action by a third recombinase forms an allele that contains only the actuating sequence in sense orientation. | 2011-05-05 |
20110104800 | METHOD AND DEVICE FOR ISOLATING TISSUE CELLS FROM A LIQUID - A method and device for isolating tissue cells from a liquid is provided for integrating a mixture of the tissue cells and the liquid into a vacuum stream and isolating again from the vacuum stream in a tissue collection container ( | 2011-05-05 |
20110104801 | METHODS AND COMPOSITIONS FOR CELL-CYCLE REGULATION - In some aspects, the invention provides methods and compositions including HTm4, an HTm4 activator, and/or an HTm4 variant to potentiate a KAP phosphatase activity and or inhibit a CDK2 kinase activity. In some embodiments, a functional C-terminal fragment of HTm4 is provided. In other aspects, the invention provides methods and compositions including an HTm4 inhibitor to inactivate or decrease the activation of a KAP phospatase activity and/or activate or relieve the inhibition on a CDK2 kinase activity. Certain aspects of the invention relate to therapeutic compositions and methods for either inhibiting or promoting cell proliferation. | 2011-05-05 |
20110104802 | PROCEDURE FOR THE UNDIFFERENTIATED OR MYELOID LINEAGE BIASED EXPANSION OF HAEMATOPOIETIC STEM CELLS FROM UMBILICAL CORD BLOOD, MOBILIZED PERIPHERAL BLOOD OR BONE MARROW - Procedure for the undifferentiated or myeloid lineage biased expansion of haematopoietic stem cells coming from umbilical cord blood, mobilized peripheral blood or bone marrow. | 2011-05-05 |
20110104803 | Method for Collecting Functional Cells In Vivo with High Efficiency - Biologically low invasive vessels are filled with biological factors that have the activity of mobilizing specific functional cells in the body. The vessels are indwelled in the body. After specific functional cells are mobilized into the vessels, the vessels are removed from the body to collect functional cell populations mobilized to the vessels. Alternatively, the cells are directly collected from the vessels indwelled in the body. | 2011-05-05 |
20110104804 | MIXING DEVICE - A mixing device for mixing a first and second material together to create an output mixture. The device includes a first chamber containing the first material coupled to a mixing chamber defined between a rotor and a stator. The rotor is disposed inside the stator and rotates therein about an axis of rotation. The first chamber houses an internal pump configured to pump the first material from the first chamber into the mixing chamber. The pump may be configured to impart a circumferential velocity into the first material before it enters the mixing chamber. At least one of the rotor and stator have a plurality of through-holes through which the second material is provided to the mixing chamber. Optionally, a second chamber is coupled to the mixing chamber. The second chamber may house an internal pump configured to pump the output material from the mixing chamber into the second chamber. | 2011-05-05 |
20110104805 | Pluripotent Stem Cells - The present invention provides methods to produce pluripotent stem cells from adult cells. In particular, the present invention provides methods to produce pluripotent stem cells from somatic cells without the use of a feeder-cell layer or an agent that increases efficiency of retroviral transfection. | 2011-05-05 |
20110104806 | REGULATING THE PRODUCTION OF LONG CHAIN HYDROCARBONS - The invention relates to isolated polypeptides that include amino acid sequences within botryococcene synthase from different algal species. In another aspect, the invention relates to a method for increasing the production level of a botryococcene hydrocarbon molecule in a cell. The method includes increasing expression of a polynucleotide sequence that encodes botryococcene synthase in the cell. In a further aspect, the invention relates to an algal cell having a polynucleotide sequence that is genetically engineered to express a higher level of botryococcene synthase than a corresponding wild type algal cell, wherein the cell produces an increased level of a botryococcene hydrocarbon molecule than a corresponding wild type algal cell. | 2011-05-05 |
20110104807 | Method for quantifying permanganate-reducing compounds - A method for quantifying the permanganate-reducing compounds (PRCs) in an acetic acid sample is disclosed. The method comprises establishing a correlation between permanganate absorbances of standard samples and their PRC contents and determining the PRC content of the acetic acid sample by measuring its permanganate absorbance of a reaction mixture containing a standard permanganate solution and the acetic acid sample. The permanganate absorbance is obtained by subtracting the manganese dioxide absorbance from the absorbance of the mixture. | 2011-05-05 |
20110104808 | BIO-THREAT MICROPARTICLE SIMULANTS - A bio-threat simulant that includes a carrier and DNA encapsulated in the carrier. Also a method of making a simulant including the steps of providing a carrier and encapsulating DNA in the carrier to produce the bio-threat simulant. | 2011-05-05 |
20110104809 | DOWNHOLE SPECTROSCOPIC HYDROGEN SULFIDE DETECTION - Methods and related apparatuses and mixtures are described for detecting hydrogen sulfide in a formation fluid downhole. A detection mixture is combined with the formation fluid downhole. The detection mixture includes metal ions for reacting with hydrogen sulfide forming a metal sulfide, and charged nanoparticles sized so as to inhibit significant aggregation of the metal sulfide so as to enable spectroscopic detection of the metal sulfide downhole. The combined mixture and formation fluid is then spectroscopically interrogated so as to detect the presence of the metal sulfide thereby indicating the presence of hydrogen sulfide in the formation fluid. The mixture also includes chelating ligands for sustaining thermal endurance of the mixture under downhole conditions. | 2011-05-05 |
20110104810 | AUTOMATIC ANALYZER - It is checked whether a liquid undulation prevention mechanism is present or absent in a reagent vessel at the start of an operation (steps | 2011-05-05 |
20110104811 | COATED AND FUNCTIONALIZED PARTICLES, POLYMER CONTAINING SAME, METHOD FOR PREPARING SAME AND USES THEREOF - The present invention relates to a particle comprising a core which comprises an oxide selected from rare earth oxides alone or in a mixture with metal oxides and which is coated with a layer of silica functionalized with a coupling agent comprising at least one chemical function soluble in a hydrophobic solvent, and to a composition comprising at least one such particle. The present invention likewise relates to the method for preparing same and to various uses thereof. | 2011-05-05 |
20110104812 | PROCESS FOR TREATING POLYMERS CONTAINING RESIDUAL CATALYST - Process for thermally stabilizing a polymer containing residues of a Sn(II), Sb(III), Pb(II), Bi(III), Fe(II), Ti(II), Ti(III), Mn(II), Mn(III), or Ge(II)-containing catalyst by treating the polymer at a temperature above its melting temperature with a peroxide selected from the group consisting of ketone peroxides, hydroperoxides, peracids, hydrogen peroxide, and mixtures thereof, wherein said peroxide is used in an amount less than 0.2 wt % based on the weight of the polymer and wherein the molar ratio of peroxy functionalities from said peroxide (p) to metal (M) ranges from 1 to 100; said metal (M) being selected from the group consisting of Sn(II), Sb(III), Pb(II), Bi(III), Fe(II), Ti(II), Ti(III), Mn(II), Mn(III), and Ge(II). The invention further relates to a method for determining the metal residue content of a polymer. | 2011-05-05 |
20110104813 | DIAGNOSIS OF EARLY STAGE CARDIAC DYSFUNCTION - Described are methods and devices for diagnosing heart failure in a subject based on the amount of brain natriuretic peptide (BNP) in a urine sample. Also described are methods and devices for predicting whether a subject is at risk of developing cardiovascular events accompanied with heart failure based on the amount of BNP in a urine sample. | 2011-05-05 |
20110104814 | HEPARAN SULFATE GLYCOSAMINOGLYCAN LYASE AND USES THEREOF - The invention provides recombinant | 2011-05-05 |
20110104815 | CONJUGATED NANOPARTICLES AND THEIR USE IN DETECTION OF LATENT FINGERPRINTS - Novel conjugates of nanoparticles are provided and have particular utility in the detection of latent fingerprints by their ability to bind to a fingerprint residue. The conjugate comprises a nanoparticle attached to a linker group having a terminal reactive moiety, wherein said nanoparticle comprises a core of a first semiconductor material having a first luminescence and a shell of a second material which at least partially surrounds the core. The conjugated nanoparticle can bind to the fingerprint residue and can be detected using fluorescence. | 2011-05-05 |
20110104816 | Method of Loading a Droplet Actuator - The invention provides droplet actuators and droplet actuator cassettes including reagent storage capabilities, as well as methods of making and using the droplet actuators and cassettes. The invention also provides continuous flow channel elements and techniques for using electrodes to manipulate droplets in flowing streams. The invention also discloses methods of separating compounds on a droplet actuator. Various other aspects of the invention are also disclosed. | 2011-05-05 |
20110104817 | INTEGRATED MICRO DEVICE, A METHOD FOR DETECTING BIOMARKERS USING THE INTEGRATED MICRO DEVICE, A METHOD FOR MANUFACTURING AN INTEGRATED MICRO DEVICE, AND AN INTEGRATED MICRO DEVICE ARRANGEMENT - Embodiments provide an integrated micro device. The integrated micro device comprises a substrate, a first microfluidic device disposed over a first surface of the substrate, a second microfluidic device disposed over a second surface of the substrate, and at least one via hole through the substrate connecting the first microfluidic device and the second microfluidic device. The second surface of the substrate is opposite to the first surface of the substrate. The first microfluidic device is monolithically integrated with the substrate, and the second microfluidic device is monolithically integrated with the substrate. | 2011-05-05 |
20110104818 | CARBAMYLATED PROTEINS AND RISK OF CARDIOVASCULAR DISEASE - Methods for characterizing a test subject's, particularly a human test subject's, risk of having cardiovascular disease or developing cardiovascular disease are provided. Also provided are methods for characterizing a test subject's risk of experiencing a complication of cardiovascular disease near term. The methods comprise determining levels of one or more carbamylated biomarkers in a bodily fluid of the test subject and/or comparing these levels with a reference value. In certain embodiments, the carbamylated biomarkers are carbamylated albumin, carbamylated fibrinogen, carbamylated immunoglobulin and carbamylated apolipoprotein A. In other embodiments, particularly where the test subject does not have clinical evidence of renal disease, the carbamylated biomarker is free and/or total peptide-bound homocitrulline. | 2011-05-05 |
20110104819 | Modification of Bioassays for Detection of Antigens Characteristic of Bacteria that are Causative of Ear and Respiratory Infections to Eliminate False Positive Results Caused by Nasopharyngeal Colonization of Children - The present invention relates to modifying rapid immunochromatographic (“ICT”) tests for the detection of characteristic carbohydrate antigens of bacteria that are known to be causative of otitis media and respiratory diseases in children under the age of approximately 12 years. Children of this age group are also prone to nasopharyngeal colonization with the same bacteria, and urine samples taken from colonized, but otherwise healthy, children were shown to exhibit an unduly high incidence of test results that were false positive for the presence of disease. | 2011-05-05 |
20110104820 | Tyrosine, Serine, And Threonine Phosphorylation Sites - The invention discloses 94 novel phosphorylation sites identified in carcinoma and leukemia, peptides (including AQUA peptides) comprising a phosphorylation site of the invention, antibodies that specifically bind to a novel phosphorylation site of the invention, and diagnostic and therapeutic uses of the above. | 2011-05-05 |
20110104821 | ABeta-OLIGOMER MEASUREMENT METHOD - Provided is a measurement method of an Aβ oligomer by the ELISA method, particularly, a method of selectively measuring an Aβ oligomer with a comparatively high molecular weight. | 2011-05-05 |
20110104822 | Determination of Distribution - A method for determining the occurrence of an analyte subpopulation of heteroforms of a substance (=S) in a liquid sample. The method comprises as its main characteristic features the step of: (i) providing a flow path which a) comprises an outlet part and an inlet part, b) comprises a capture zone (CZ) containing a solid phase exhibiting an immobilized analyte specific binder (B) [=affinity counterpart to the substance] which is capable of affinity binding to S with an affinity that differs for the various heteroforms of S, and c) permits capillary suction from the outlet part for driving a liquid flow through CZ, (ii) flowing said liquid sample containing S in the downstream direction through CZ while S is captured by said binder B in CZ, (iii) determining the distribution of S along the flow direction in CZ by measuring the relative amount of S in at least one subzonei of CZ, and (iv) determining the occurrence of the analyte subpopulation based on the distribution determined in step (iii). | 2011-05-05 |
20110104823 | MEASURING LIPOPROTEIN CONTAINING PARTICLES - This document provides methods and materials involved in assessing samples (e.g., serum samples) for lipoprotein containing particles. For example, methods and materials involved in using anti-apoprotein antibodies (e.g., fluorescently labeled anti-apoprotein antibodies) to label lipoprotein containing particles that can be detected or measured using flow cytometry are provided. | 2011-05-05 |
20110104824 | MULTI-CHANNEL SAW SENSOR CHIP - A sensor chip for specific analysis of analytes in a liquid includes a plurality of sensor elements based on the SAW principle and applied as layer structures onto a surface of a substrate. A surface of each sensor element is coated with a sensitive substrate or coating having receptors specifically binding one analyte. During operation, the surface of the sensor chip rests against and seals a half-open covering part, with the covering part and the sensor chip forming a flow cell to be rinsed by the liquid. Conductor structures contact the sensor elements from the flow cell. More than six sensor elements are present which can each be triggered and read out separately via control and measuring electronics. At least two and in particular all sensor elements, are each coated with a differently sensitive substrate and the sensitive substrate is applied to the surface before attachment of the cover part. | 2011-05-05 |
20110104825 | METHOD FOR ENHANCING SENSITIVITY OR METHOD FOR AVOIDING INFLUENCE OF HEMOGLOBIN IN IMMUNOLOGICAL MEASUREMENT - To provide a technique for enhancing measurement sensitivity or a technique for avoiding a hemoglobin influence in an immunoassay method. | 2011-05-05 |
20110104826 | CALIBRATION OF FLUIDIC DEVICES - The present invention provides methods of calibrating a fluidic device useful for detecting an analyte of interest in a bodily fluid. The invention also provides methods for assessing the reliability of an assay for an analyte in a bodily fluid with the use of a fluidic device. Another aspect of the invention is a method for performing a trend analysis on the concentration of an analyte in a subject using a fluidic device. | 2011-05-05 |
20110104827 | Template-Registered DiBlock Copolymer Mask for MRAM Device Formation - A method for fabricating a magnetoresistive random access memory (MRAM) includes forming a mask over a magnetic layer; forming a template on the mask; applying a diblock copolymer to the template; curing the diblock copolymer to form a first plurality of uniform shapes registered to the template; etching the mask to form a second plurality of uniform shapes; and etching the magnetic layer to form a third plurality of uniform shapes, the third plurality of uniform shapes comprising a plurality of magnetic tunnel junctions (MTJs). A diblock copolymer mask for fabricating a magnetoresistive random access memory (MRAM) includes a magnetic layer; a mask formed on the magnetic layer; a template formed on the mask; and a diblock copolymer mask comprising a plurality of uniform shapes formed on and registered to the template. | 2011-05-05 |
20110104828 | METHOD FOR MAKING MICROSTRUCTURES BY CONVERTING POROUS SILICON INTO POROUS METAL OR CERAMICS - A method for making a micro structure ( | 2011-05-05 |
20110104829 | METHOD OF TRANSFER BY MEANS OF A FERROELECTRIC SUBSTRATE - A method of carrying out a transfer of one or more first components or of a first layer onto a second substrate including: a) application and maintaining, by electrostatic effect, of the one or more first components or of the first layer, on a first substrate, made of a ferroelectric material, electrically charged, b) placing in contact, direct or by molecular adhesion, and transfer of the components or the layer onto a second substrate, and c) dismantling of the first substrate, leaving at least one part of the components or the layer on the second substrate. | 2011-05-05 |
20110104830 | APPARATUS FOR INSPECTION WITH ELECTRON BEAM, METHOD FOR OPERATING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING FORMER - A substrate inspection apparatus | 2011-05-05 |
20110104831 | Deletable nanotube circuit - Carbon nanotube template arrays may be edited to form connections between proximate nanotubes and/or to delete undesired nanotubes or nanotube junctions. | 2011-05-05 |
20110104832 | METHOD FOR PRODUCING A FIELD-EMITTER ARRAY WITH CONTROLLED APEX SHARPNESS - A method of manufacturing field-emitter arrays by a molding technique includes uniformly controlling a shape of mold holes to obtain field emitter tips having diameters below 100 nm and blunted side edges. Repeated oxidation and etching of a mold substrate formed of single-crystal semiconductor mold wafers is carried out, wherein the mold holes for individual emitters are fabricated by utilizing the crystal orientation dependence of the etching rate. | 2011-05-05 |
20110104833 | ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display is disclosed. The display has a pixel which includes a transistor and a capacitor. The active layer of the transistor and at least one of the electrodes of the capacitor comprise a semiconductor oxide. | 2011-05-05 |
20110104834 | Light emitting device including a sealing portion, and method of making the same - A method of making a light emitting device, includes a mounting and a light emitting element on a substrate; hot-pressing a glass material on the light emitting element to form a glass sealing portion for sealing the light emitting element; and forming a phosphor layer on a surface of the glass sealing portion. | 2011-05-05 |
20110104835 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENTS - A method of manufacturing semiconductor light emitting elements with improved yield and emission power uses laser lift-off and comprises the steps of forming a semiconductor grown layer formed of a first semiconductor layer, an active layer, and a second semiconductor layer on a first principal surface of a growth substrate; forming a plurality of junction electrodes apart on the second semiconductor layer and forming guide grooves arranged in a lattice to surround each of the junction electrodes in the second semiconductor layer; joining together a support and the semiconductor grown layer via the junction electrodes; projecting a laser to separate the growth substrate; dividing the semiconductor grown layer into respective element regions for the semiconductor light emitting elements; and cutting the support, thereby separating into the semiconductor light emitting elements. Removed regions include regions where the guide grooves are formed, and side walls of the second semiconductor layer formed by the guide grooves have a beveled shape at intersections of the guide grooves. | 2011-05-05 |
20110104836 | METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT - In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence. | 2011-05-05 |
20110104837 | GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING HIGH EMISSION EFFICIENCY AND METHOD OF MANUFACTURING THE SAME - The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a low driving voltage Vf. The gallium nitride based compound semiconductor light-emitting device includes a p-type semiconductor layer, and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer. A dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than the bulk dopant concentration of the transparent conductive oxide film. Therefore, the contact resistance between the p-type semiconductor layer and the transparent conductive oxide film is reduced. | 2011-05-05 |
20110104838 | LIQUID CRYSTAL DISPLAY AND METHOD OF MAKING THE SAME - A method of making a liquid crystal display having a display region and a non-display region, the method comprises forming a thin film transistor (“TFT”) having a drain electrode on an insulating substrate, forming an inorganic layer and an organic insulating layer sequentially on the TFT, forming an organic insulating layer pattern, by patterning the organic insulating layer, comprising a first organic layer hole to expose the inorganic layer on the drain electrode and a second organic layer hole formed along a circumference of the display region where the organic insulating layer is partially removed, removing the inorganic layer exposed through the first organic layer hole and the organic insulating layer remaining in the second organic layer hole, and forming a sealant in the second organic hole. The present invention thus provides a method of making an LCD to prevent a color filter substrate separating from a TFT substrate using fewer masks. | 2011-05-05 |
20110104839 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region. | 2011-05-05 |
20110104840 | Etchant Solutions And Additives Therefor - The present invention is concerned with etchant or etching solutions and additives therefor, a process of preparing the same, a process of patterning a substrate employing the same, a patterned substrate thus prepared in accordance with the present invention and an electronic device including such a patterned substrate. An etchant solution according to the present invention for patterned etching of at least one surface or surface coating of a substrate comprises nitric acid, a nitrite salt, a halogenated organic acid represented by the formula C(H)n(Hal)m[C(H)o(Hal)p]qCθ2H, where Hal represents bromo, chloro, fluoro or b iodo, where n is 0, 1, 2 or 3, and m is 0, 1, 2 or 3, with the proviso that m+n=3; o is 0 or 1, p is 1 or 2, with the proviso that o+p=2; q is 0 or 1, with the proviso that q+m=1, 2, 3 or 4; and balance water. | 2011-05-05 |
20110104841 | MASK LEVEL REDUCTION FOR MOFET - A method of fabricating a thin film transistor for an active matrix display using reduced masking operations includes patterning a gate on a substrate. A gate dielectric is formed over the gate and a semiconducting metal oxide is deposited on the gate dielectric. A channel protection layer is patterned on the semiconducting metal oxide overlying the gate to define a channel area and to expose the remaining semiconducting metal oxide. A source/drain metal layer is deposited on the structure and etched through to the channel protection layer above the gate to separate the source/drain metal layer into source and drain terminals and the source/drain metal layer and the semiconducting metal oxide are etched through at the periphery to isolate the transistor. A nonconductive spacer is patterned on the transistor and portions of the surrounding source/drain metal layer. | 2011-05-05 |
20110104842 | MANUFACTURING METHOD OF ORGANIC EL DISPLAY - Provided is a method of manufacturing an organic EL display which includes a substrate having a TFT therein and a plurality of organic EL elements disposed on the substrate, each of the organic EL elements having a first electrode disposed on the substrate, an organic layer disposed on the first electrode, and a second electrode disposed on the organic layer, the method including: providing the substrate having the TFT therein; forming the first electrode connected to the TFT on the substrate; forming the organic layer on the first electrode; detecting a foreign substance introduced in the organic layer; forming a groove which surrounds the foreign substance in the organic layer; and forming the second electrode on the organic layer, the second electrode being separated by the groove from a region surrounded by the groove. | 2011-05-05 |
20110104843 | METHOD OF REDUCING DEGRADATION OF MULTI QUANTUM WELL (MQW) LIGHT EMITTING DIODES - A method of fabricating a light emitting diode. According to embodiments of the present invention an active region comprising a plurality of gallium nitride (GaN) barrier layers and a plurality of indium gallium nitride (InGan) quantum well layers are formed over a substrate. A p-type gallium nitride layer is formed above the active region by a hydride vapor phase epitaxy (HVPE) at a high deposition rate. | 2011-05-05 |
20110104844 | METHOD FOR FABRICATING MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) DEVICE - A method for fabricating MEMS device includes providing a substrate having a first side and a second side. Then, a structural dielectric layer is formed over the substrate at the first side, wherein a structural conductive layer is embedded in the structural dielectric layer. A multi-stage patterning process is performed on the substrate from the second side, wherein a plurality of regions of the substrate with different levels is formed and a portion of the structural dielectric layer is exposed. An isotropic etching process is performed from the second side of the substrate or from the both side of the substrate to etch the structural dielectric layer, wherein a remaining portion of the structural dielectric layer comprises the structural conductive layer and a dielectric portion enclosed by the structural conductive layer. | 2011-05-05 |
20110104845 | PRODUCTION METHOD OF MEMS SENSOR - Production method for a MEMS sensor including a substrate, a lower thin film, opposed to a surface of the substrate at an interval, having a plurality of lower through-holes formed to pass through the lower thin film in the thickness direction thereof, an upper thin film, opposed to the lower thin film at an interval on the side opposite to the substrate, having a plurality of upper through-holes formed to pass through the upper thin film in the thickness direction thereof, and a plurality of protrusions irregularly provided on a region of the surface of the substrate opposed to the lower thin film. | 2011-05-05 |
20110104846 | Thermoelectric 3D Cooling - The invention comprises a 3D chip stack with an intervening thermoelectric coupling (TEC) plate. Through silicon vias in the 3D chip stack transfer electronic signals among the chips in the 3D stack, power the TEC plate, as well as distribute heat in the stack from hotter chips to cooler chips. | 2011-05-05 |
20110104847 | EVAPORATIVE SYSTEM FOR SOLAR CELL FABRICATION - A plurality of chamber are arranged about a transport chamber. The linear transport chamber may include a linear track supporting robot arms. The robot arms transport substrates to and from the chambers. Each chamber includes a plurality of evaporators, each controlled independently. Each substrate positioned in the chamber is coated from a plurality of the evaporators, such that by controlling the operation of each evaporator independently the formation of the layers and the concentration gradient of each layer can be precisely controlled. | 2011-05-05 |
20110104848 | HOT WIRE CHEMICAL VAPOR DEPOSITION (CVD) INLINE COATING TOOL - Methods and apparatus for hot wire chemical vapor deposition (HWCVD) are provided herein. In some embodiments, an inline HWCVD tool may include a linear conveyor for moving a substrate through the linear process tool; and a multiplicity of HWCVD sources, the multiplicity of HWCVD sources being positioned parallel to and spaced apart from the linear conveyor and configured to deposit material on the surface of the substrate as the substrate moves along the linear conveyor; wherein the substrate is coated by the multiplicity of HWCVD sources without breaking vacuum. In some embodiments, methods of coating substrates may include depositing a first material from an HWCVD source on a substrate moving through a first deposition chamber; moving the substrate from the first deposition chamber to a second deposition chamber; and depositing a second material from a second HWCVD source on the substrate moving through the second deposition chamber. | 2011-05-05 |
20110104849 | PHOTOVOLTAIC DEVICE AND MANUFACTURING METHOD THEREOF - A photovoltaic device capable of improving an output characteristic is provided. The photovoltaic device includes an n-type single-crystal silicon substrate, a p-type amorphous silicon substrate, and a substantially intrinsic i-type amorphous silicon layer disposed between the n-type single-crystal silicon substrate and the p-type amorphous silicon layer. The i-type amorphous silicon layer includes: a first section which is located on the n-type single-crystal silicon substrate side, and which has an oxygen concentration equal to or below 10 | 2011-05-05 |
20110104850 | SOLAR CELL CONTACT FORMATION PROCESS USING A PATTERNED ETCHANT MATERIAL - Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active region(s) and the metal contact structure of a solar cell device. In one embodiment, the methods include the use of various etching and patterning processes that are used to define point contacts through a blanket dielectric layer covering a surface of a solar cell substrate. The method generally includes depositing an etchant material that enables formation of a desired pattern in a dielectric layer through which electrical contacts to the solar cell device can be formed. | 2011-05-05 |
20110104851 | Semiconductor Device and Manufacturing Method Thereof - An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region. | 2011-05-05 |
20110104852 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor memory device has a plurality of core chips and an interface chip, whose specification can be easily changed, while suppressing the degradation of its reliability. The device has an interposer chip. First internal electrodes connected to core chips are formed on the first surface of the interposer chip. Second internal electrodes connected to an interface chip and third internal electrodes connected to external electrodes are formed on the second surface of the interposer chip. The interface chip can be mounted on the second surface of the interposer chip whenever desired. Therefore, the memory device can have any specification desirable to a customer, only if an appropriate interface chip is mounted on the interposer chip, as is demanded by the customer. Thus, the core chips do not need to be stocked in great quantities in the form of bare chips. | 2011-05-05 |
20110104853 | METHOD OF FORMING SEMICONDUCTOR PACKAGE - A method of forming a semiconductor package includes providing a transfer film and placing electronic components on the transfer film with active sides of the electronic components facing the transfer film. The electronic components include a first assembled package and one or more of a second assembled package and a passive component. A molding operation is performed to encapsulate the electronic components and one side of the transfer film. The transfer film is then removed, which exposes the active sides of the electronic components. An electrical distribution layer is formed over the active sides of the electronic components and electrically connects the electronic components. Conductive bumps are then formed on the electrical distribution layer. | 2011-05-05 |
20110104854 | METHOD AND LEADFRAME FOR PACKAGING INTEGRATED CIRCUITS - A leadframe suitable for use in the packaging of at least two integrated circuit dice into a single integrated circuit package is described. The leadframe includes a plurality of leads. Each of a first set of the plurality of leads has a first side and a second side substantially opposite the first side of the lead. Additionally, each of the first and second sides of the first set of leads each include at least two solder pads. Each solder pad on a lead of the first set of leads is isolated from other solder pads on the same side of the lead with at least one recessed region adjacent the solder pad. In various embodiments, I/O pads from at least two dice are physically and electrically connected to the opposing sides of the leads. | 2011-05-05 |
20110104855 | Method of making a semiconductor chip assembly with a post/base heat spreader with an ESD protection layer - A method of making a semiconductor chip assembly includes providing a post, a base, an ESD protection layer and a metal layer, wherein the post extends above the base and the ESD protection layer is sandwiched between the base and the metal layer, mounting an adhesive on the base including inserting the post into an opening in the adhesive, mounting a conductive layer on the adhesive including aligning the post with an aperture in the conductive layer, then flowing the adhesive upward between the post and the conductive layer, solidifying the adhesive, then providing a conductive trace that includes a pad, a terminal and a selected portion of the conductive layer, providing a heat spreader that includes the post, the base, the ESD protection layer and an underlayer that includes at least a portion of the metal layer, then mounting a semiconductor device on the post, electrically connecting the semiconductor device to the conductive trace and thermally connecting the semiconductor device to the heat spreader. | 2011-05-05 |
20110104856 | METHOD OF MAKING A SEMICONDUCTOR CHIP ASSEMBLY WITH A POST/BASE/POST HEAT SPREADER - A method of making a semiconductor chip assembly includes providing first and second posts, first and second adhesives and a base, wherein the first post extends from the base in a first vertical direction into a first opening in the first adhesive, the second post extends from the base in a second vertical direction into a second opening in the second adhesive and the base is sandwiched between and extends laterally from the posts, then flowing the first adhesive in the first vertical direction and the second adhesive in the second vertical direction, solidifying the adhesives, then providing a conductive trace that includes a pad and a terminal, wherein the pad extends beyond the base in the first vertical direction and the terminal extends beyond the base in the second vertical direction, providing a heat spreader that includes the posts and the base, then mounting a semiconductor device on the first post, electrically connecting the semiconductor device to the conductive trace and thermally connecting the semiconductor device to the heat spreader. | 2011-05-05 |
20110104857 | PACKAGED MICRODEVICES AND METHODS FOR MANUFACTURING PACKAGED MICRODEVICES - Microdevices and methods for packaging microdevices. One embodiment of a packaged microdevice includes a substrate having a mounting area, contacts in the mounting area, and external connectors electrically coupled to corresponding contacts. The microdevice also includes a die located across from the mounting area and spaced apart from the substrate by a gap. The die has an integrated circuit and pads electrically coupled to the integrated circuit. The microdevice further includes first and second conductive elements in the gap that form interconnects between the contacts of the substrate and corresponding pads of the die. The first conductive elements are electrically connected to contacts on the substrate, and the second conductive elements are electrically coupled to corresponding pads of the die. The first conductive elements are attached to the second conductive elements at corresponding interfaces such that the interconnects connect the contacts of the substrate directly to corresponding pads on the die within the gap. | 2011-05-05 |
20110104858 | METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT MOUNTED WIRING BOARD - A semiconductor element sealed substrate including a semiconductor element covered by an insulating layer is fabricated while a wiring substrate formed by stacking wiring layers is fabricated by a process different from the process of fabricating the semiconductor element sealed substrate. Next, the semiconductor element sealed substrate and the wiring substrate are stacked on each other in such a way that electrode terminals of the semiconductor element and corresponding conductive bumps on the outermost wiring layer face each other. The electrode terminals and the conductive bumps are thus connected to each other. | 2011-05-05 |
20110104859 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device is provided, which includes a process in which a transistor is formed over a first substrate; a process in which a first insulating layer is formed over the transistor; a process in which a first conductive layer connected to a source or a drain of the transistor is formed; a process in which a second substrate provided with a second insulating layer is arranged so that the first insulating layer is attached to the second insulating layer; a process in which the second insulating layer is separated from the second substrate; and a process in which a third substrate provided with a second conductive layer which functions as an antenna is arranged so that the first conductive layer is electrically connected to the second conductive layer. | 2011-05-05 |
20110104860 | SEMICONDUCTOR NANOWIRE WITH BUILT-IN STRESS - A semiconductor nanowire having two semiconductor pads on both ends is suspended over a substrate. Stress-generating liner portions are formed over the two semiconductor pads, while a middle portion of the semiconductor nanowire is exposed. A gate dielectric and a gate electrode are formed over the middle portion of the semiconductor nanowire while the semiconductor nanowire is under longitudinal stress due to the stress-generating liner portions. The middle portion of the semiconductor nanowire is under a built-in inherent longitudinal stress after removal of the stress-generating liners because the formation of the gate dielectric and the gate electrode locks in the strained state of the semiconductor nanowire. Source and drain regions are formed in the semiconductor pads to provide a semiconductor nanowire transistor. A middle-of-line (MOL) dielectric layer may be formed directly on the source and drain pads. | 2011-05-05 |
20110104861 | INTEGRATED COMPLEMENTARY LOW VOLTAGE RF-LDMOS - Complementary RF LDMOS transistors have gate electrodes over split gate oxides. A source spacer of a second conductivity type extends laterally from the source tap of a first conductivity type to approximately the edge of the gate electrode above the thinnest gate oxide. A body of a first conductivity type extends from approximately the bottom center of the source tap to the substrate surface and lies under most of the thin section of the split gate oxide. The source spacer is approximately the length of the gate sidewall oxide and is self aligned with gate electrode. The body is also self aligned with gate electrode. The drain is surrounded by at least one buffer region which is self aligned to the other edge of the gate electrode above the thickest gate oxide and extends to the below the drain and extends laterally under the thickest gate oxide. Both the source tap and drain are self aligned with the gate side wall oxides and are thereby spaced apart laterally from the gate electrode. | 2011-05-05 |
20110104862 | METHOD OF FORMING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of forming a semiconductor device includes the following processes. A first semiconductor structure is formed, which extends upwardly in a direction perpendicular to a main surface from a surface of a semiconductor substrate. A first insulating film is formed which extends on a surface of the first semiconductor structure. A gate electrode is formed which extends on the first insulating film. The gate electrode has a top surface which is lower than a top surface of the first semiconductor structure. A liner film is formed, which may include, but is not limited to, first and second liner portions. The first liner portion covers the gate electrode. The second liner portion extends upwardly from the top surface of the gate electrode. The liner film includes nitrogen and oxygen. | 2011-05-05 |
20110104863 | TRANSISTOR INCLUDING A HIGH-K METAL GATE ELECTRODE STRUCTURE FORMED PRIOR TO DRAIN/SOURCE REGIONS ON THE BASIS OF A SACRIFICIAL CARBON SPACER - When forming sophisticated high-k metal gate electrode structures in an early manufacturing stage, the dielectric cap layer of the gate electrode structures may be efficiently removed on the basis of a carbon spacer element, which may thus preserve the integrity of the silicon nitride spacer structure. Thereafter, the sacrificial carbon spacer may be removed substantially without affecting other device areas, such as isolation structures, active regions and the like, which may contribute to superior process conditions during the further processing of the semiconductor device. | 2011-05-05 |
20110104864 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a complementary metal oxide semiconductor (CMOS) device is provided. A first conductive type MOS transistor including a source/drain region using a semiconductor compound as major material is formed in a first region of a substrate. A second conductive type MOS transistor is formed in a second region of the substrate. Next, a pre-amorphous implantation (PAI) process is performed to amorphize a gate conductive layer of the second conductive type MOS transistor. Thereafter, a stress-transfer-scheme (STS) is formed on the substrate in the second region to generate a stress in the gate conductive layer. Afterwards, a rapid thermal annealing (RTA) process is performed to activate the dopants in the source/drain region. Then, the STS is removed. | 2011-05-05 |
20110104865 | METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - A semiconductor device includes: a transistor including source and drain diffusion-layers, a gate insulating film and a gate electrode; first and second plugs formed in a first interlayer-insulating film and connected to the source and drain diffusion-layers, respectively; a third plug extending through a second interlayer-insulating film and connected to the first plug; a first interconnection-wire formed on the second interlayer-insulating film and connected to the third plug; a second interconnection-wire formed on a third interlayer-insulating film and intersecting the first interconnection-wire; a fourth interlayer-insulating film; a hole extending through the fourth, third and second interlayer-insulating films, the hole being formed such that a side surface of the second interconnection-wire is exposed; and a fourth plug filling the hole via an intervening dielectric film and connected to the second plug, wherein a capacitor is formed using the fourth plug, the second interconnection-wire and the dielectric film sandwiched therebetween. | 2011-05-05 |
20110104866 | ENHANCED ADHESION OF PECVD CARBON ON DIELECTRIC MATERIALS BY PROVIDING AN ADHESION INTERFACE - Amorphous carbon material may be deposited with superior adhesion on dielectric materials, such as TEOS based silicon oxide materials, in complex semiconductor devices by applying a plasma treatment, such as an argon treatment and/or forming a thin adhesion layer based on silicon dioxide, carbon-doped silicon dioxide, prior to depositing the carbon material. Consequently, the hard mask concept based on amorphous carbon may be applied with an increased degree of flexibility, since a superior adhesion may allow a higher degree of flexibility in selecting appropriate deposition parameters for the carbon material. | 2011-05-05 |
20110104867 | FABRICATING VIAS OF DIFFERENT SIZE OF A SEMICONDUCTOR DEVICE BY SPLITTING THE VIA PATTERNING PROCESS - When forming a complex metallization system in which vias of different lateral size have to be provided, a split patterning sequence may be applied. For this purpose, a lithography process may be specifically designed for the critical via openings and a subsequent second patterning process may be applied for forming the vias of increased lateral dimensions, while the critical vias are masked. In this manner, superior process conditions may be established for each of the patterning sequences. | 2011-05-05 |
20110104868 | METHOD OF FORMING SEMICONDUCTOR DEVICE - A method of forming a semiconductor device include the following processes. A groove is formed in a semiconductor substrate. A first insulating film is formed on a bottom surface of the groove and a second insulating film on a side surface of the groove. The second insulating film is thinner than the first insulating film. A conductive layer is formed on the first insulating film. | 2011-05-05 |
20110104869 | THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - An embodiment is directed to a method of fabricating a semiconductor memory device, the method including preparing a substrate having a cell array region and a contact region, forming a thin film structure on the substrate, including forming sacrificial film patterns isolated horizontally by a lower isolation region, the lower isolation region traversing the cell array region and the contact region, and forming sacrificial films sequentially stacked on the sacrificial film patterns, and forming an opening that penetrates the thin film structure to expose the lower isolation region of the cell array region, the opening being restrictively formed in the cell array region. | 2011-05-05 |
20110104870 | METHOD FOR MANUFACTURING BONDED WAFER - A method for manufacturing a bonded wafer, including at least implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer to form an ion-implanted layer in the wafer, bonding an ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an insulator film, and then delaminating the bond wafer at the ion-implanted layer to fabricate a bonded wafer. A plasma treatment is applied to a bonding surface of one of the bond wafer and the base wafer to grow an oxide film, etching the grown oxide film is carried out, and bonding to the other wafer is performed. The method enables preventing defects by reducing particles on the bonding surface and performing strong bonding when effecting bonding directly or through the insulator film. | 2011-05-05 |
20110104871 | METHOD FOR MANUFACTURING BONDED SUBSTRATE - Provided is a method for manufacturing a bonded wafer with a good thin film over the entire substrate surface, especially in the vicinity of the lamination terminal point. The method for manufacturing a bonded wafer comprises at least the following steps of: forming an ion-implanted region by implanting a hydrogen ion or a rare gas ion, or the both types of ions from a surface of a first substrate which is a semiconductor substrate; subjecting at least one of an ion-implanted surface of the first substrate and a surface of a second substrate to be attached to a surface activation treatment; laminating the ion-implanted surface of the first substrate and the surface of the second substrate in an atmosphere with a humidity of 30% or less and/or a moisture content of 6 g/m | 2011-05-05 |
20110104872 | Method of manufacturing a semiconductor device having a heat spreader - A semiconductor device manufacturing method includes cutting a resin sealing body into a plurality of pieces, in which the resin sealing body includes a plurality of semiconductor chips mounted on a wiring board, a heat spreader disposed above the plurality of the semiconductor chips, and a sealing resin filled between the wiring board and the heat spreader. The cutting the resin sealing body includes shaving the resin sealing body from a side of the heat spreader, and shaving the resin sealing body from a side of the wiring board. The shaving the resin sealing body from the side of the heat spreader includes etching the heat spreader. | 2011-05-05 |
20110104873 | DICING/DIE BONDING FILM - Provided is a dicing die-bonding film which is excellent in balance between retention of a semiconductor wafer upon dicing and releasability upon picking up. Disclosed is a dicing die-bonding film comprising a dicing film having a pressure-sensitive adhesive layer on a substrate material, and a die-bonding film formed on the pressure-sensitive adhesive layer, wherein the pressure-sensitive adhesive layer contains a polymer including an acrylic acid ester as a main monomer, 10 to 40 mol % of a hydroxyl group-containing monomer based on the acrylic acid ester, and 70 to 90 mol % of an isocyanate compound having a radical reactive carbon-carbon double bond based on the hydroxyl group-containing monomer, and is also cured by irradiation with ultraviolet rays under predetermined conditions after film formation on the substrate material, and wherein the die-bonding film contains an epoxy resin, and is also bonded on the pressure-sensitive adhesive layer after irradiation with ultraviolet rays. | 2011-05-05 |
20110104874 | Energy Ray-Curable Polymer, an Energy Ray-Curable Adhesive Composition, an Adhesive Sheet and a Processing Method of a Semiconductor Wafer - In a pressure-sensitive adhesive composition or a pressure-sensitive adhesive sheet containing an energy ray-curable polymer, problems associated with the volatilization of a low molecular weight compound contained in the composition are overcome. An energy ray-curable polymer characterized by comprising a radical generating group, which is capable of initiating a polymerization reaction upon excitation with an energy ray, and an energy ray-polymerizable group bonded together in the main or side chain. | 2011-05-05 |
20110104875 | SELECTIVE SILICON ETCH PROCESS - A process for etching a silicon layer disposed on a substrate, including anisotropically etching a first trench in the silicon layer; selectively anisotropic wet etching silicon surfaces in the first trench, the wet etching comprising exposing the silicon surfaces to an aqueous composition including an aromatic tri(lower)alkyl quaternary onium hydroxide, and an unsymmetrical tetraalkyl quaternary phosphonium salt; in which the wet etching etches (110) and (100) planes of the silicon layer at about equal rates and preferentially to the (111) plane to form an enlarged trench having a sidewall in the (111) plane. A silicon alloy may be epitaxially deposited in the thus-produced trench as part of a process of introducing stress into at least a portion of the silicon layer. | 2011-05-05 |
20110104876 | ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION METHOD FOR PRODUCING A N-SEMICONDUCTIVE METAL SULFIDE THIN LAYER - An atmospheric pressure chemical vapor deposition method for producing an N-type semiconductive metal sulfide thin film on a heated substrate includes converting an indium-containing precursor to at least one of a liquid phase and a gaseous phase. The indium-containing precursor is mixed with an inert carrier gas stream and hydrogen sulfide in a mixing zone so as to form a mixed precursor. A substrate is heated to a temperature in a range of 100° C. to 275° C. and the mixed precursor is directed onto the substrate. The hydrogen sulfide is supplied at a rate so as to obtain an absolute concentration of hydrogen sulfide in the mixing zone of no more than 1% by volume. The In-concentration of the indium containing precursor is selected so as to produce a compact indium sulfide film. | 2011-05-05 |