18th week of 2011 patent applcation highlights part 17 |
Patent application number | Title | Published |
20110101276 | DOUBLY REDUCED PERYLENE-DIIMIDES AND SUPRAMOLECULAR POLYMERS DERIVED FROM PERYLENE-DIIMIDES - This invention is directed to perylene-diimide aromatic dianion compounds, process of preparation and uses thereof. The perylene-diimide aromatic dianion compounds of this invention are stable in aqueous solution and can be used for photofunctional and electron transfer systems in aqueous phase. This invention is also directed to supramolecular polymers derived from perylene-diimide compounds and to uses thereof. (1) wherein said compound is a dianion; wherein, X is —NR | 2011-05-05 |
20110101277 | CHROMIUM-FREE WATER GAS SHIFT CATALYST - Catalyst for use in the high temperature shift reaction comprising in its active form a mixture of zinc alumina spinel and zinc oxide in combination with an alkali metal selected from the group consisting of Na, K, Rb, Cs and mixtures thereof. | 2011-05-05 |
20110101278 | USE OF A CATALYST BASED ON NOBLE METAL FOR REDUCING THE TAR CONTENT IN GASES RESULTING FROM GASIFICATION PROCESSES - The invention relates to a method for reducing the tar content in gases resulting from a thermochemical gasification process of carbon-containing starting material and includes contacting of at least a part of the gas obtained from the gasification process with a catalyst containing noble metals, wherein the noble metals include at least two noble metals selected from the group consisting of Pt, Pd, Rh, Ir, Os, Ru and Re. | 2011-05-05 |
20110101279 | PROCESS FOR OPERATING HTS REACTOR - Process for enriching a synthesis gas in hydrogen by conversion of carbon monoxide and steam over a catalyst containing oxides of zinc and aluminum together with one or more promoters. | 2011-05-05 |
20110101280 | RUST PREVENTIVE OIL COMPOSITION - A rust preventive oil composition is provided, which includes: (A) a base oil that is at least one oil selected from a mineral oil and a synthetic oil; (B) 0.1 to 10% by mass of water based on a total mass of the composition; and (C) one or more specific rust preventive additives selected from the group consisting of a sarcosine-type compound, a nonionic surfactant, a sulfonate salt, an ester, an amine, a carboxylic acid, a fatty acid amine salt, a carboxylate salt, paraffin wax, a salt of oxidized wax, and a boron compound, wherein the rust preventive oil composition has a kinetic viscosity of 20 to 100 mm | 2011-05-05 |
20110101281 | METHOD OF MAKING AN ARTICLE OF SEMICONDUCTING MATERIAL - A method of making an article of a semiconducting material involves withdrawing from a melt of molten semiconducting material a solid mold having already formed on an external surface of the mold a solid layer of the semiconducting material. During the act of withdrawal, one or more of a temperature, a force, and a relative rate of withdrawal are controlled in order to achieve one or more desired attributes in a solid overlayer of semiconductor material that is formed over the solid layer during the withdrawal. | 2011-05-05 |
20110101282 | WATER-SOLUBLE SELF-ACID-DOPED POLYANILINE BLENDS - The present invention provides a water-soluble self-acid-doped polyaniline blends, comprising a 70-90% weight percentage polyaniline derivative and 10-30% weight percentage at least a water-soluble polymer. The blend can be used to produce a conductive polymer film and/or a conductive-polymer composite film. In the present invention, a water-soluble self-acid-doped polyaniline derivative is blended with a water-soluble polymer to enhance the mechanical properties and the coating-to-substrate adhesion of the electric conductive polymer film or the electric conductive-polymer composite film, and increase the conductivity of the blender. In addition, the blend containing a water-soluble self-acid-doped polyaniline of the present invention is biotoxicity-free and has free radical-capture capability. Thus it can be used as a biocompatible and conductive biomedical material. | 2011-05-05 |
20110101283 | ELECTRICALLY CONDUCTIVE COMPOSITION AND FABRICATION METHOD THEREOF - An electrically conductive composition and a fabrication method thereof are provided. The electrically conductive structure includes a major conductive material and an electrically conductive filler of an energy delivery character dispersed around the major conductive material. The method includes mixing a major conductive material with an electrically conductive filler of an energy delivery character to form a mixture, coating the mixture on a substrate, applying a second energy source to the mixture while simultaneously applying a first energy source for sintering the major conductive material to form an electrically conductive composition with a resistivity smaller than 10×10 | 2011-05-05 |
20110101284 | ELECTRICALLY CONDUCTING SYNTACTIC FOAM AND A PROCESS FOR PREPARING THE SAME - The present invention relates to design and development of carbon nanotubes (CNT) reinforced electrically conducting synthetic foams comprising resin matrix system, carbon nanotubes, hollow glass microspheres and optionally hardener or catalyst for electrical conductivity and related applications especially electromagnetic interference (EMI) shielding. | 2011-05-05 |
20110101285 | CONDUCTIVE PASTE WITH SURFACTANTS - A conductive paste includes: at least one metal powder, an organic vehicle, a glass and a surfactant having a representative formula as follows: M | 2011-05-05 |
20110101286 | ALUMINUM-CONTAINING ZINC OXIDE-BASED n-TYPE THERMOELECTRIC CONVERSION MATERIAL - ZnAlO series thermoelectric conversion materials have large thermal conductivity κ about 40 W/mK at room temperature, thus the dimensionless figure of merit ZT remains around 0.3 at 1000 deg C, which is a third of the value required in practical application. An n-type thermoelectric conversion material, comprising aluminum including zinc oxide, which is represented by a general formula: Zn | 2011-05-05 |
20110101287 | OPTICAL FILM, METHOD FOR PRODUCING SAME, POLARIZER AND LIQUID CRYSTAL DISPLAY DEVICE - An optical film comprising a cellulose acylate resin having a total degree of acyl substitution of less than 2.5 and a cellulose acylate resin having a total degree of acyl substitution of 2.5 or more, and satisfying the following formula (1): | 2011-05-05 |
20110101288 | Manual Force Reduction Device - The present invention discloses a manual force reduction device for reducing a force required to initiate movement of a load by a separate mechanism. The device can have an energy storage mechanism that has a compressed position and a released position, and the energy storage mechanism can be operable to store a predetermined amount of energy when it is in the compressed position. A latch can be included and be used to hold the energy storage mechanism in the compressed position. At a desired time, a latch release can release the energy storage mechanism from the compressed position such that the predetermined amount of energy is released and transferred to the load. | 2011-05-05 |
20110101289 | FLOOR TILE PUSHER - A floor tile pusher includes a base, on which a bar is provided for reciprocation and a driving gear is provided for rotation. The bar and the driving gear have teeth to be meshed with each other. An exerting member is connected to an end of the bar, and a handle is connected to the driving member for turning. User may turn the handle to move the exerting member toward or backward. The base has an end bent downward to form a reverse exerting portion, and a support member is provided on the base to be moved between an extended position and a folded position. When the support member is moved to the extended position, a distal end of the support member is even to a distal end of the reverse exerting portion. | 2011-05-05 |
20110101290 | Integrated Systems Facilitating Wire and Cable Installations - Pulling eyes are provided with integrated wiring systems suitable for installing conductors or cables. The pulling eyes may include body portions that define interior cavities that are sized to snugly engage outside portions of the conductors or cables. The body portions are sized to be deformably crimped onto the outside portions of the conductors or cables. The pulling eyes may also include head portions joined to the body portions, with the head portions defining apertures for receiving a strength member for installing the conductors or cables. These apertures place the interior cavities in communication with the exteriors of the pulling eyes. | 2011-05-05 |
20110101291 | Wire Installation Tool For Heating Wire Support Meshing - A tool for installing a heating wire in a floor substrate of the type having receiving means opened toward a surface thereof to receive a heating wire comprises a support with a handle portion to be manually handled by a user. A contact surface is related to the support, the contact surface adapted to contact the floor or floor substrate during displacement of the tool along the floor substrate. An interface is between the handle portion and a heating wire. The interface is adapted to contact the heating wire such that a given pressure applied on the handle portion by the user during the displacement of the tool along the floor substrate is converted by the interface into local engagement of the heating wire in at least one of the receiving means. A method for installing the heating wire using the tool is also provided. | 2011-05-05 |
20110101292 | Reduced Size and Reconfigurable Winch - A zero fleet winch that has a hollow drum and a motor and gear assembly mounted inside the drum. A roller assembly moves with the rotation to keep constant the angle where the cable goes on and off the drum. | 2011-05-05 |
20110101293 | Workhorse Winch - A winch driven by a rotatable cassette. The cassette can be rotated into multiple different positions. Each of the addition positions produces a different speed up the output for a cable. | 2011-05-05 |
20110101294 | ENGAGEMENT CHAIN - The invention provides a pair of engagement chains which has inner tooth plates, bushes, outer tooth plates and connecting pins and is integrated by engaging hook portions of the inner tooth plates and hook portions of the outer tooth plates and is branched by disengaging the hook portions of the inner tooth plates and the hook portions of the outer tooth plates. The pair of engagement chains further includes inflection restricted plates having inflection restricted surfaces and inflection restricting plates having inflection restricting portions that are connected on the both ends of the connecting pins. | 2011-05-05 |
20110101295 | JACK WITH SELECTIVELY INTERCHANGEABLE COMPONENTS - A novel hydraulic jack kit is disclosed comprising a specialized jack configured to be compatible with selectively interchangeable components. The specialized jack on its own is configured to lift vehicles such as motorbikes and snowmobiles completely off the floor, so that the only support is the jack itself. The specialized jack is also configured to receive a platform component that converts the jack into one suitable for lifting automobiles with a large wheel base that will have two wheels remaining on the floor when lifted. It is further configured to receive a platform component that converts the jack into one suitable for lifting a vehicle with a short wheel base, where the elevated vehicle adopts a large angle of elevation. In all configurations, a novel stabilizing structure is provided. | 2011-05-05 |
20110101296 | PEDESTRIAN BARRICADE ASSEMBLY - Pedestrian barricade assembly includes a plurality of uprights and associated guide rails. Each upright includes a front section having one or more transversely extending channels. Each of the channels has a pair of laterally spaced semi-circular flanges in upper and lower side walls of the channels that are slidably engageable by upper and lower open notches adjacent end portions of the guide rails to provide hinge connections therebetween. | 2011-05-05 |
20110101297 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device and a method of manufacturing the same with easy formation of a phase change film is realized, realizing high integration at the time of using a phase change film as a memory element. | 2011-05-05 |
20110101298 | METHODS, STRUCTURES AND DEVICES FOR INCREASING MEMORY DENSITY - Non-volatile memory devices comprising a memory string including a plurality of vertically superimposed diodes. Each of the diodes may be arranged at different locations along a length of the electrode and may be spaced apart from adjacent diodes by a dielectric material. The electrode may electrically couple the diodes of the memory strings to one another and to another memory device, such as, a MOSFET device. Methods of forming the non-volatile memory devices as well as intermediate structures are also disclosed. | 2011-05-05 |
20110101299 | CARBON NANOTUBE ARRAYS FOR FIELD ELECTRON EMISSION AND METHODS OF MANUFACTURE AND USE - A method for preparation of carbon nanotubes (CNTs) bundles for use in field emission devices (FEDs) includes forming a plurality of carbon nanotubes on a substrate, contacting the carbon nanotubes with a polymer composition comprising a polymer and a solvent, and removing at least a portion of the solvent so as to form a solid composition from the carbon nanotubes and the polymer to form a carbon nanotube bundle having a base with a periphery, and an elevated central region where, along the periphery of the base, the carbon nanotubes slope toward the central region. | 2011-05-05 |
20110101300 | REFLECTING LIGHT EMITTING STRUCTURE AND METHOD OF MANUFACTURE THEREOF - A reflecting light emitting structure includes a substrate having a plurality of grooves formed in a first face of the substrate is disclosed. The first face is in a first crystallographic plane. Each of the plurality of grooves includes a first sidewall that is coplanar with a second crystallographic plane and a second sidewall that is coplanar with a third crystallographic plane. A buffer layer is provided on the substrate to reduce mechanical strain between the substrate and a light emitting diode (LED) fabricated on the buffer layer. | 2011-05-05 |
20110101301 | LIGHT EMITTING DEVICE WITH A COUPLED QUANTUM WELL STRUCTURE - A light emitting device with a coupled quantum well structure in an active region. The coupled quantum well structure may include two or more wells are separated by one or more mini-barriers, and the wells and mini-barriers together are sandwiched by barriers. The coupled quantum well structure provides almost the same effect as a wide quantum well, due to the coupling of the wavefunctions through the mini-barrier. The light emitting device may be a nonpolar, semipolar or polar (Al,Ga,In)N based light emitting device. | 2011-05-05 |
20110101302 | WAFER-SCALE FABRICATION OF SEPARATED CARBON NANOTUBE THIN-FILM TRANSISTORS - Methods, materials, systems and apparatus are described for depositing a separated nanotube networks, and fabricating, separated nanotube thin-film transistors and N-type separated nanotube thin-film transistors. In one aspect, a method of depositing a wafer-scale separated nanotube networks includes providing a substrate with a dielectric layer. The method includes cleaning a surface of the wafer substrate to cause the surface to become hydrophilic. The cleaned surface of the wafer substrate is functionalized by applying a solution that includes linker molecules terminated with amine groups. High density, uniform separated nanotubes are assembled over the functionalized surface by applying to the functionalized surface a separated nanotube solution that includes semiconducting nanotubes. | 2011-05-05 |
20110101303 | LIGHT-EMITTING DEVICE COMPRISING SEMICONDUCTOR NANOCRYSTAL LAYER FREE OF VOIDS AND METHOD FOR PRODUCING THE SAME - A light-emitting device including a semiconductor nanocrystal layer and a method for producing the light-emitting device are provided. The light-emitting device includes a semiconductor nanocrystal layer whose voids are filled with a filling material. According to the light-emitting device, since voids formed between nanocrystal particles of the semiconductor nanocrystal layer are filled with a filling material, the occurrence of a current leakage through the voids is minimized, which enables the device to have extended service life, high luminescence efficiency, and improved stability. | 2011-05-05 |
20110101304 | LIGHT-EMITTING DEVICE AND FABRICATING METHOD THEREOF - Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a wafer bonding layer over the support substrate, a second electrode layer, which includes a current blocking layer and a reflective current spreading layer, over the wafer bonding layer, a current injection layer over the second electrode layer, a superlattice structure layer over the current injection layer, a second conductive semiconductor layer over the superlattice structure layer, an active layer over the second conductive semiconductor layer, a first conductive semiconductor layer over the active layer, and a first electrode layer over the first conductive semiconductor layer. | 2011-05-05 |
20110101305 | MOS Devices with Partial Stressor Channel - A semiconductor structure includes a semiconductor substrate having a first lattice constant; a gate dielectric on the semiconductor substrate; a gate electrode on the semiconductor substrate; and a stressor having at least a portion in the semiconductor substrate and adjacent the gate electrode. The stressor has a tilted sidewall on a side adjacent the gate electrode. The stressor includes a first stressor layer having a second lattice constant substantially different from the first lattice constant; and a second stressor layer on the first stressor layer, wherein the second stressor has a third lattice constant substantially different from the first and the second lattice constants. | 2011-05-05 |
20110101306 | PHOTODIODE ARRAY, METHOD FOR MANUFACTURING PHOTODIODE ARRAY, EPITAXIAL WAFER, AND METHOD FOR MANUFACTURING EPITAXIAL WAFER - Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array | 2011-05-05 |
20110101307 | SUBSTRATE FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided are a semiconductor substrate including an uneven structure disposed on a surface of a substrate, a buffer layer disposed on the uneven structure, the buffer layer having an acicular structure, a compound semiconductor layer disposed on the buffer layer to planarize the uneven structure, and a plurality of voids defined between the substrate and the compound semiconductor layer, and a method for manufacturing the same. Thus, since the acicular structure disposed on the uneven structure of the substrate forms the voids on an interface between the substrate and the single crystal GaN layer to relax a stress due to a lattice mismatch and intercept propagation of a breakdown potential, a warpage characteristic of the grown single crystal GaN layer may be reduced, as well as, crystallinity may be improved. | 2011-05-05 |
20110101308 | Utilization of Organic Buffer Layer to Fabricate High Performance Carbon Nanoelectronic Devices - A fabrication process for a nanoelectronic device and a device are provided. Channel material is deposited on a substrate to form a channel. A source metal contact and a drain metal contact are deposited on the channel material, and the source metal contact and the drain metal contact are on opposing ends of the channel material. A polyhydroxystyrene derivative is deposited on the channel material. A top gate oxide is deposited on the polymer layer. A top gate metal is deposited on the top gate oxide. | 2011-05-05 |
20110101309 | GRAPHENE BASED SWITCHING DEVICE HAVING A TUNABLE BANDGAP - A method of implementing bandgap tuning of a graphene-based switching device includes subjecting a bi-layer graphene to an electric field while simultaneously subjecting the bi-layer graphene to an applied strain that reduces an interlayer spacing between the bi-layer graphene, thereby creating a bandgap in the bi-layer graphene. | 2011-05-05 |
20110101310 | ELECTROACTIVE MATERIALS - There is provided an electroactive material having Formula I | 2011-05-05 |
20110101311 | OFF-CENTER DEPOSITION OF ORGANIC SEMICONDUCTOR IN AN ORGANIC SEMICONDUCTOR DEVICE - The present disclosure provides a method of making a thin film semiconductor device such as a transistor comprising the steps of: a) providing a substrate bearing first and second conductive zones which define a channel therebetween, where the channel does not border more than 75% of the perimeter of either conductive zone; and b) depositing a discrete aliquot of a solution comprising an organic semiconductor adjacent to or on the channel, where a majority of the solution is deposited to one side of the channel and not on the channel. In some embodiments of the present disclosure, the solution is deposited entirely to one side of the channel, not on the channel, and furthermore the solution is deposited in a band having a length that is less than the channel length. The present disclosure additionally provides thin film semiconductor devices such as a transistors. | 2011-05-05 |
20110101312 | DEUTERATED COMPOUNDS FOR ELECTRONIC APPLICATIONS - This invention relates to deuterated indolocarbazole compounds that are useful in electronic applications. It also relates to electronic devices in which the active layer includes such a deuterated compound. | 2011-05-05 |
20110101313 | Electroluminescent Devices Comprising Bus Bars - A method for manufacturing an organic semiconductor device having a plurality of pixels, said method comprising: providing a substrate comprising a patterned layer of well-defining banks ( | 2011-05-05 |
20110101314 | ORGANIC LIGHT EMITTING DIODE LIGHTING APPARATUS - An organic light emitting diode lighting apparatus is disclosed. The apparatus includes a plurality of electrode lines that feed current to or from a plurality of light emitting diodes, and a flexible printed circuit board (FPCB) that has a plurality of connection lines electrically connected to the plurality of electrode lines through the plurality of contact holes. In some embodiments, the FPCB has a fuse for each of the electrode lines. | 2011-05-05 |
20110101315 | PIEZOELECTRIC NANOWIRE STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME - A piezoelectric nanowire structure includes a base substrate, a plurality of piezoelectric nanowires disposed on the base substrate, and a piezoelectric organic material layer disposed on the base substrate and covering the plurality of piezoelectric nanowires. | 2011-05-05 |
20110101316 | ORGANIC LIGHT-EMITTING DIODE LUMINAIRES - There is provided an organic light-emitting diode luminaire. The luminaire includes a first electrode, a second electrode, and an electroluminescent layer therebetween. The electroluminescent layer includes:
| 2011-05-05 |
20110101317 | Electronic Devices and Methods of Making Them Using Solution Processing Techniques - A method of manufacturing an electronic device comprises: providing a base comprising circuit elements; forming a double bank well-defining structure over the base, comprising a first layer of insulating material and a second layer of insulating material thereover; and depositing a solution of organic material in the well defined by the double bank structure. The double bank well-defining structure is formed by removing material from the first and second layers in a single processing step to form the well. The first layer is made of a material which is removed at a faster rate than material of the second layer to form an overhanging step structure in which the second layer protrudes out over an edge of the first layer. | 2011-05-05 |
20110101318 | NOVEL MACROMOLECULAR COMPOUNDS HAVING A CORE-SHELL STRUCTURE FOR USE AS SEMICONDUCTORS - The invention relates to novel macromolecular compounds having a core-shell structure and also their use in electronic components. | 2011-05-05 |
20110101319 | ORGANIC ELECTROLUMINESCENT DEVICE - Provided are a hole-injecting material for an organic electroluminescent device (organic EL device) exhibiting high luminous efficiency at a low voltage and having greatly improved driving stability, and an organic EL device using the material. The hole-injecting material for an organic EL device is selected from benzenehexacarboxylic acid anhydrides, benzenehexacarboxylic acid imides, or N-substituted benzenehexacarboxylic acid imides. Further, the organic EL device has at least one light-emitting layer and at least one hole-injecting layer between an anode and a cathode arranged opposite to each other, and includes the above-mentioned hole-injecting material for an organic EL device in the hole-injecting layer. The organic EL device may contain a hole-transporting material having an ionization potential (IP) of 6.0 eV or less in the hole-injecting layer or a layer adjacent to the hole-injecting layer. | 2011-05-05 |
20110101320 | ORGANIC THIN FILM TRANSISTOR - An organic thin film transistor comprising source and drain electrodes, an organic semiconductor disposed in a channel region between the source and drain electrodes, a gate electrode, and a dielectric disposed between the source and drain electrodes and the gate electrode, wherein the source electrode and the drain electrode comprise at least one different physical and/or material property from each other. | 2011-05-05 |
20110101321 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY AND ORGANIC LIGHT EMITTING DISPLAY - A method of manufacturing an organic light emitting display includes: forming a transistor on a substrate; forming a cathode electrode on the transistor to be connected to a source or a drain of the transistor; forming a bank layer having an opening on the cathode electrode; allowing a natural oxide layer to form on the cathode electrode; removing the natural oxide layer from the cathode electrode; forming an insulating buffer layer on the cathode electrode; forming an organic light emitting layer on the insulating buffer layer; and forming an anode electrode on the organic light emitting layer. | 2011-05-05 |
20110101322 | Organic Light Emitting Element and Display Device Using the Element - A hole transporting region made of a hole transporting material, an electron transporting region made of an electron transporting material, and a mixed region (light emitting region) in which both the hole transporting material and the electron transporting material are mixed and which is doped with a triplet light emitting material for red color are provided in an organic compound film, whereby interfaces between respective layers which exist in a conventional lamination structure are eliminated, and respective functions of hole transportation, electron transportation, and light emission are exhibited. In accordance with the above-mentioned method, the organic light emitting element for red color can be obtained in which power consumption is low and a life thereof is long. Thus, the display device and the electric device are manufactured by using the organic light emitting element. | 2011-05-05 |
20110101323 | ORGANIC THIN FILM TRANSISTORS - A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region. | 2011-05-05 |
20110101324 | FUNCTIONAL MOLECULAR ELEMENT, MANUFACTURING METHOD THEREOF, AND FUNCTIONAL MOLECULAR DEVICE - A functional molecule ( | 2011-05-05 |
20110101325 | ORGANIC PHOTOELECTRIC CONVERSION ELEMENT - An organic photoelectric conversion element having a pair of electrodes and a functional layer arranged between the electrodes, wherein the functional layer contains an electron-accepting compound and a polymer having a repeating unit which is composed of a structure represented by formula (1) and a structure represented by formula (2): | 2011-05-05 |
20110101326 | ORGANIC FIELD EFFECT TRANSISTOR - An organic field effect transistor including an organic semiconductor layer constituting a current path between a source electrode and a drain electrode wherein the organic semiconductor layer is made of a conjugated polymer having a depletion layer and a conductivity of the organic semiconductor layer is controlled by using a gate electrode, wherein the depletion layer is formed by joining a reductive material being capable of forming Schottky contact with the organic semiconductor layer made of the conjugated polymer. There can be provided an organic field effect transistor using a conjugated polymer as an organic semiconductor and being capable of maintaining an insulation property. | 2011-05-05 |
20110101327 | Electronic Devices Comprising Metal Complexes Having Isonitrile Ligands - The present invention relates to electronic devices, in particular organic electroluminescent devices, comprising metal complexes which contain isonitrile ligands. | 2011-05-05 |
20110101328 | Organic Electroluminescent Device - The present invention relates to white-emitting organic electroluminescent devices which comprise at least one phosphorescent emitter and at least one ketone derivative as matrix material in at least one emitting layer. | 2011-05-05 |
20110101329 | HIGH PERFORMANCE SOLUTION PROCESSABLE SEMICONDUCTING POLYMERS BASED ON AL-TERNATING DONOR ACCEPTOR COPOLYMERS - A benzothiadiazol-cyclopentadithiophene copolymer comprising as repeating unit the group of the formula (I) wherein R is n-hexadecyl or 3,7-dimethyloctyl, and having a number average molecular weight Mn in the range of from 30 to 70 kg/mol is disclosed. The invention also relates to the use of the copolymers as semiconductors or charge transport materials, as thin-film transistors (TFTs), or in semiconductor components for organic light-emitting diodes (OLEDs), for photovoltaic components or in sensors, as an electrode material in batteries, as optical waveguides or for electrophotography applications. | 2011-05-05 |
20110101330 | ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display is disclosed. The display comprises a transistor with an active layer comprising an oxide semiconductor material. The oxide semiconductor material has conductivity suitable for the transistor because of a diffusion path allowing hydrogen to escape from the active layer. | 2011-05-05 |
20110101331 | SEMICONDUCTOR DEVICE - An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized. | 2011-05-05 |
20110101332 | SEMICONDUCTOR DEVICE - The semiconductor device includes: a transistor having an oxide semiconductor layer; and a logic circuit formed using a semiconductor material other than an oxide semiconductor. One of a source electrode and a drain electrode of the transistor is electrically connected to at least one input of the logic circuit, and at least one input signal is applied to the logic circuit through the transistor. The off-current of the transistor is preferably 1×10 | 2011-05-05 |
20110101333 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device with reduced standby power. A transistor including an oxide semiconductor as an active layer is used as a switching element, and supply of a power supply voltage to a circuit in an integrated circuit is controlled by the switching element. Specifically, when the circuit is in an operation state, supply of the power supply voltage to the circuit is performed by the switching element, and when the circuit is in a stop state, supply of the power supply voltage to the circuit is stopped by the switching element. In addition, the circuit supplied with the power supply voltage includes a semiconductor element which is a minimum unit included in an integrated circuit formed using a semiconductor. Further, the semiconductor included in the semiconductor element contains silicon having crystallinity (crystalline silicon). | 2011-05-05 |
20110101334 | SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor having a novel structure. In the semiconductor device, a plurality of memory elements are connected in series and each of the plurality of memory elements includes first to third transistors thus forming a memory circuit. A source or a drain of a first transistor which includes an oxide semiconductor layer is in electrical contact with a gate of one of a second and a third transistor. The extremely low off current of a first transistor containing the oxide semiconductor layer allows storing, for long periods of time, electrical charges in the gate electrode of one of the second and the third transistor, whereby a substantially permanent memory effect can be obtained. The second and the third transistors which do not contain an oxide semiconductor layer allow high-speed operations when using the memory circuit. | 2011-05-05 |
20110101335 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer, such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H | 2011-05-05 |
20110101336 | POWER DIODE, RECTIFIER, AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - With a non-linear element (e.g., a diode) with small reverse saturation current, a power diode or rectifier is provided. A non-linear element includes a first electrode provided over a substrate, an oxide semiconductor film provided on and in contact with the first electrode and having a concentration of hydrogen of 5×10 | 2011-05-05 |
20110101337 | TRANSISTOR - To provide a thin film transistor which has high operation speed and in which a large amount of current can flow when the thin film transistor is on and off-state current at the time when the thin film transistor is off is extremely reduced. The thin film transistor is a vertical thin film transistor in which a channel formation region is formed using an oxide semiconductor film in which hydrogen or an OH group contained in the oxide semiconductor is removed so that hydrogen is contained in the oxide semiconductor at a concentration of lower than or equal to 5×10 | 2011-05-05 |
20110101338 | NON-LINEAR ELEMENT, DISPLAY DEVICE INCLUDING NON-LINEAR ELEMENT, AND ELECTRONIC DEVICE INCLUDING DISPLAY DEVICE - A non-linear element, such as a diode, in which an oxide semiconductor is used and a rectification property is favorable is provided. In a thin film transistor including an oxide semiconductor in which the hydrogen concentration is less than or equal to 5×10 | 2011-05-05 |
20110101339 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer. | 2011-05-05 |
20110101340 | LIGHT EMITTING DEVICE INCLUDING SECOND CONDUCTIVE TYPE SEMICONDUCTOR LAYER AND METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE - Provided is a light emitting device, which includes a first conductive type semiconductor layer, an active layer, a roughness pattern, and a second conductive type semiconductor layer. The active layer is disposed on the first conductive type semiconductor layer. The roughness pattern is disposed on the active layer. The second conductive type semiconductor layer is disposed on the roughness pattern and the active layer, and includes a metal oxide. | 2011-05-05 |
20110101341 | SUB-ASSEMBLY FOR USE IN FABRICATING PHOTO-ELECTROCHEMICAL DEVICES AND A METHOD OF PRODUCING A SUB-ASSEMBLY - A sub assembly is disclosed for use in fabrication of photo-electrochemical devices including: a first layer which includes a semiconductor material; a second layer which is electrically conductive; and wherein the second layer supports the first layer. Methods of producing the sub assembly are also disclosed. | 2011-05-05 |
20110101342 | ZnO based semiconductor devices and methods of manufacturing the same - A semiconductor device may include a composite represented by Formula 1 below as an active layer. | 2011-05-05 |
20110101343 | ZnO based semiconductor devices and methods of manufacturing the same - A semiconductor device may include a composite represented by Formula 1 below as an active layer. | 2011-05-05 |
20110101344 | SEMICONDUCTOR MATERIAL - A semiconductor device which comprises a channel layer formed from a semiconductor channel component material in the form of crystalline micro particles, micro rods, crystalline nano particles, or nano rods, and doped with a semiconductor dopant. | 2011-05-05 |
20110101345 | LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE USING THE SAME - An object of the present invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light emitting element of the invention includes a first layer for generating holes, a second layer for generating electrons and a third layer comprising a light emitting substance between first and second electrodes. The first and third layers are in contact with the first and second electrodes, respectively. The second and third layers are connected to each other so as to inject electrons generated in the second layer into the third layer when applying the voltage to the light emitting element such that a potential of the second electrode is higher than that of the first electrode. | 2011-05-05 |
20110101346 | LIGHT EMITTING DISPLAY APPARATUS - There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element. | 2011-05-05 |
20110101347 | Interconnect Sensor for Detecting Delamination - An interconnect sensor for detecting delamination due to coefficient of thermal expansion mismatch and/or mechanical stress. The sensor comprises a conductive path that includes a via disposed between two back end of line metal layers separated by a dielectric. The via is coupled between a first probe structure and a second probe structure and mechanically coupled to a stress inducing structure. The via is configured to alter the conductive path in response to mechanical stress caused by the stress inducing structure. The stress inducing structure can be a through silicon via or a solder ball. The dielectric material can be a low-k dielectric material. In another embodiment, a method of forming an interconnect sensor is provided for detecting delamination. | 2011-05-05 |
20110101348 | DEVICE FOR ANALYZING CHARGE AND ULTRAVIOLET (UV) LIGHT - Provided is a device for analyzing at least one of a generated amount of positive charges, a generated amount of negative charges, and a generated amount of ultraviolet (UV) light. The device includes a substrate on which at least one of a first device configured to detect a variation in threshold voltage relative to the generated amount of positive charges, a second device configured to detect a variation in threshold voltage relative to the generated amount of negative charges, and a third device configured to detect a variation in threshold voltage relative to the generated amount of UV light is formed. Each of the first through third devices includes a first isolation region disposed in the substrate which define first and third active regions each of a first conductivity type and second and fourth active regions each of a second conductivity type different from the first conductivity type, first impurity regions disposed in the first active region and spaced apart from each other and having the second conductivity type, a floating gate crossing over the first active region between the first impurity regions and extending over the second active region, a second impurity region disposed in the second active region and having the first conductivity type, and a conductive structure electrically connected to the second impurity region. | 2011-05-05 |
20110101349 | SEMICONDUCTOR PACKAGE, METHOD OF EVALUATING SAME, AND METHOD OF MANUFACTURING SAME - A semiconductor package includes a wiring board, a semiconductor device mounted on the wiring board, an electrically-conductive thermal interface material provided on the semiconductor device, a test electrode in contact with a first surface of the thermal interface material to be electrically connected to the thermal interface material, and an electrically-conductive heat spreader in contact with a second surface of the thermal interface material opposite to its first surface. | 2011-05-05 |
20110101350 | SEMICONDUCTOR-BASED SUB-MOUNTS FOR OPTOELECTRONIC DEVICES WITH CONDUCTIVE PATHS - The disclosure facilitates testing and binning of multiple LED chip or other optoelectronic chip packages fabricated on a single semiconductor wafer. The testing can take place prior to dicing. For example, in one aspect, metallization on the front-side of a semiconductor wafer electrically connects together cathode pads (or anode pads) of adjacent sub-mounts such that the cathode pads (or anode pads) in a given column of sub-mounts are electrically connected together. Likewise, metallization on the back-side of the wafer electrically connects together anode pads (or cathode pads) of adjacent sub-mounts such that the anode pads (or cathode pads) in a given row of sub-mounts are electrically connected together. Probe pads, which can be located one or both sides of the wafer, are electrically connected to respective ones of the rows or columns. | 2011-05-05 |
20110101351 | SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device capable of functioning as a memory device. The memory device comprises a plurality of memory cells, and each of the memory cells contains a first transistor and a second transistor. The first transistor is provided over a substrate containing a semiconductor material and has a channel formation region in the substrate. The second transistor has an oxide semiconductor layer. The gate electrode of the first transistor and one of the source and drain electrodes of the second transistor are electrically connected to each other. The extremely low off current of the second transistor allows the data stored in the memory cell to be retained for a significantly long time even in the absence of supply of electric power. | 2011-05-05 |
20110101352 | AMORPHOUS OXIDE AND THIN FILM TRANSISTOR - The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 | 2011-05-05 |
20110101353 | Display device and method of manufacturing the same - A display device and a method of manufacturing the same, the display device including a substrate, a semiconductor layer on the substrate, a light shielding layer on the substrate, the light shielding layer and the semiconductor layer being positioned directly on a same layer, a gate insulating layer on the substrate covering the semiconductor layer and the light shielding layer, and a gate electrode on the gate insulating layer, the gate electrode corresponding to a channel region of the semiconductor layer. | 2011-05-05 |
20110101354 | SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device | 2011-05-05 |
20110101355 | NON-LINEAR ELEMENT, DISPLAY DEVICE, AND ELECTRONIC DEVICE - A non-linear element (e.g., a diode) with small reverse saturation current is provided. A non-linear element includes a first electrode provided over a substrate, an oxide semiconductor film provided on and in contact with the first electrode, a second electrode provided on and in contact with the oxide semiconductor film, a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode, and a third electrode provided in contact with the gate insulating film and adjacent to a side surface of the oxide semiconductor film with the gate insulating film interposed therebetween or a third electrode provided in contact with the gate insulating film and surrounding the second electrode. The third electrode is connected to the first electrode or the second electrode. | 2011-05-05 |
20110101356 | TRANSISTOR - It is an object to provide a thin film transistor with high speed operation, in which a large amount of current can flow when the thin film transistor is on and off-state current is extremely reduced when the thin film transistor is off. The thin film transistor is a vertical thin film transistor in which a channel formation region is formed using an oxide semiconductor film in which hydrogen is contained in an oxide semiconductor at a concentration of lower than or equal to 5×10 | 2011-05-05 |
20110101357 | DISPLAY DEVICE - A display device which uses a TFT having a gate electrode film thereof arranged on a light source side can also suppress the increase of parasitic capacitance while suppressing the generation of a light leakage current. On at least one end of the TFT, between a high concentration region which constitutes a source region or a drain region and a channel region, a first low concentration region which is arranged on a high concentration region side and exhibits low impurity concentration and a second low concentration region which exhibits impurity concentration even lower than the impurity concentration of the first low concentration region are provided in this order. | 2011-05-05 |
20110101358 | SEMICONDUCTOR DEVICE AND DISPLAY APPARATUS USING THE SEMICONDUCTOR DEVICE - Disclosed herein is a semiconductor device which employs a thin-film transistor. In addition, the semiconductor device has a gate electrode, a gate insulation film, an organic semiconductor layer, a structure, a source electrode, a drain electrode, and an electrode material layer. | 2011-05-05 |
20110101359 | ORGANIC ELECTRO-LUMINESCENT DISPLAY DEVICE - An organic electro-luminescent display device includes a substrate, a pixel electrode on the substrate, and a pixel define layer covering edges of the pixel electrode and having an opening to expose the pixel electrode, a surface of the pixel define layer facing the opening being bent at a predetermined curvature. | 2011-05-05 |
20110101360 | SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME - A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved. | 2011-05-05 |
20110101361 | OFF-SET TOP PIXEL ELECTRODE CONFIGURATION - A semiconductor device architecture where the top pixel electrode is deposited in an off-set configuration, such as to overlap the COM electrode, and also the gate electrode of the neighboring device. Such a configuration allows for improved device performance, resulting from features such as a greater storage capacitance. | 2011-05-05 |
20110101362 | ELECTRO-OPTICAL DEVICE AND THIN FILM TRANSISTOR AND METHOD FOR FORMING THE SAME - A semiconductor device having a pair of impurity doped second semiconductor layers, formed on a first semiconductor layer having a channel formation region therein, an outer edge of the first semiconductor film being at least partly coextensive with an outer edge of the impurity doped second semiconductor layers. The semiconductor device further includes source and drain electrodes formed on the pair of impurity doped second semiconductor layers, wherein the pair of impurity doped second semiconductor layers extend beyond inner sides edges of the source and drain electrodes so that a stepped portion is formed from an upper surface of the source and drain electrodes to a surface of the first semiconductor film. | 2011-05-05 |
20110101363 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A separation layer containing a halogen element is formed over a glass substrate by a plasma CVD method; a semiconductor element is formed over the separation layer; and separation is then performed inside the separation layer or at its interface, so that the large-area glass substrate and the semiconductor element are detached from each other. In order to perform detachment at the interface between the glass substrate and the separation layer, the separation layer may have concentration gradient of the halogen element, and the halogen element is contained more near the interface between the separation layer and the glass substrate than in the other areas. | 2011-05-05 |
20110101364 | SYSTEMS, METHODS AND MATERIALS INCLUDING CRYSTALLIZATION OF SUBSTRATES VIA SUB-MELT LASER ANNEAL, AS WELL AS PRODUCTS PRODUCED BY SUCH PROCESSES - Systems, methods, and products of processes consistent with the innovations herein relate to aspects involving crystallization of layers on substrates. In one exemplary implementation, there is provided a method of fabricating a device. Moreover, such method may include placing an amorphous/poly material on a substrate and heating the material via a sub-melt laser anneal process to transform the material into crystalline form. | 2011-05-05 |
20110101365 | ELECTRONIC DEVICE INCLUDING GRAPHENE THIN FILM AND METHODS OF FABRICATING THE SAME - Provided are an electronic device and methods of fabricating the same, the electronic device include a device-substrate, a stacked structure, and an electrode. The stacked structure includes a graphene thin film between a first insulator and a second insulator. The electrode is disposed over the stacked structure. | 2011-05-05 |
20110101366 | PAPER INCLUDING SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Paper embedded with a semiconductor device capable of communicating wirelessly is realized, whose unevenness of a portion including the semiconductor device does not stand out and the paper is thin with a thickness of less than or equal to 130 μm. A semiconductor device is provided with a circuit portion and an antenna, and the circuit portion includes a thin film transistor. The circuit portion and the antenna are separated from a substrate used during manufacturing, and are interposed between a flexible base and a sealing layer and protected. The semiconductor device can be bent, and the thickness of the semiconductor device itself is less than or equal to 30 μm. The semiconductor device is embedded in a paper in a papermaking process. | 2011-05-05 |
20110101367 | Semiconductor Device and A Method of Manufacturing the Same - A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable III can be obtained. | 2011-05-05 |
20110101368 | FLASH LAMP ANNEALING CRYSTALLIZATION FOR LARGE AREA THIN FILMS - The disclosed subject matter generally relates a method of irradiating a large area thin film with a pulsed light source. In some embodiments, the disclosed subject matter particularly relates to utilizing flash lamp annealing in combination with patterning techniques for making thin film devices. The flash lamp annealing can trigger lateral growth crystallization or explosive crystallization in large area thin films. In some embodiments, capping layers or proximity masks can be used in conjunction with the flash lamp annealing. | 2011-05-05 |
20110101369 | Gallium nitride semiconductor device with improved termination scheme - This invention discloses a gallium nitride based semiconductor power device disposed in a semiconductor substrate. The power device comprises a termination area disposed at a peripheral area of the semiconductor power device comprises a termination structure having at least a guard ring disposed in a trench filled with doped gallium-based epitaxial layer therein. | 2011-05-05 |
20110101370 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - A semiconductor device and method of manufacturing the device is disclosed. In one aspect, the device includes a semiconductor substrate and a GaN-type layer stack on top of the semiconductor substrate. The GaN-type layer stack has at least one buffer layer, a first active layer and a second active layer. Active device regions are definable at an interface of the first and second active layer. The semiconductor substrate is present on an insulating layer and is patterned to define trenches according to a predefined pattern, which includes at least one trench underlying the active device region. The trenches extend from the insulating layer into at least one buffer layer of the GaN-type layer stack and are overgrown within the at least one buffer layer, so as to obtain that the first and the second active layer are continuous at least within the active device regions. | 2011-05-05 |
20110101371 | Gallium nitride semiconductor - A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts. | 2011-05-05 |
20110101372 | NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME - A nitride-based semiconductor light-emitting device | 2011-05-05 |
20110101373 | METHOD OF FORMING A COMPOSITE LASER SUBSTRATE - A composite substrate for laser devices is disclosed having improved wave guiding properties, improved lattice matching, improved thermal expansion matching, and improved thermal conductivity. The composite substrate has an intermediate layer ( | 2011-05-05 |
20110101374 | MONOLITHIC HIGH VOLTAGE SWITCHING DEVICES AND RELATED METHODS OF FABRICATING THE SAME - Metal oxide semiconductor (MOS) power devices are provided including a MOS channel including a semiconductor material having high electron mobility on a silicon carbide (SiC) layer. Related methods are also provided herein. | 2011-05-05 |
20110101375 | Power Semiconductor Devices Having Selectively Doped JFET Regions and Related Methods of Forming Such Devices - Semiconductor switching devices include a wide band-gap drift layer having a first conductivity type (e.g., n-type), and first and second wide band-gap well regions having a second conductivity type (e.g., p-type) on the wide band-gap drift layer. First and second wide band-gap source/drain regions of the first conductivity type are on the first and second wide band-gap well regions, respectively. A wide band-gap JFET region having the first conductivity type is provided between the first and second well regions. This JFET region includes a first local JFET region that is adjacent a side surface of the first well region and a second local JFET region that is adjacent a side surface of the second well region. The local JFET regions have doping concentrations that exceed a doping concentration of a central portion of the JFET region that is between the first and second local JFET regions of the JFET region. | 2011-05-05 |