17th week of 2022 patent applcation highlights part 57 |
Patent application number | Title | Published |
20220130571 | ELECTRICAL INSULATION COMPOSITION AND POWER CABLE - An electrical insulation composition includes a base resin containing 65 parts by mass or more and 98 parts by mass or less of a polyethylene and 2 parts by mass or more and 35 parts by mass or less of a styrene-containing resin, the polyethylene and the styrene-containing resin totaling 100 parts by mass, and 0.05 parts by mass or more and 1.0 parts by mass or less of a fatty acid amide. | 2022-04-28 |
20220130572 | COMPOSITE CONDUCTIVE MATERIALS AND METHODS - Articles and methods regarding composite conductor materials comprising a first conductive material layer and a first carbonaceous material layer. In certain embodiments, the first carbonaceous material layer comprises an sp2 hybridized carbon compound. In certain embodiments, the electrical conductivity of the composite conductive material can be controlled and exhibits a conductivity at least 1.5% greater than the conductivity of the first conductive material layer alone. | 2022-04-28 |
20220130573 | ELECTRIC CABLE - The present disclosure provides an electric cable, comprising two signal conductors, a resin insulating layer, an expanded polytetrafluoroethylene insulating film, an electromagnetic shielding film, two ground conductors, and a covering layer. The resin insulating layer covers the two signal conductors. The expanded polytetrafluoroethylene insulating film covers the resin insulating layer. The electromagnetic shielding film covers the expanded polytetrafluoroethylene insulating film. The two ground conductors are disposed at two sides of the electromagnetic shielding film. The cladding layer clads the electromagnetic shielding film and the two ground conductors. Through the expanded polytetrafluoroethylene insulating film, the electric cable can be applied to compact products, and the electric cable can be highly flexible such that the signal transmission performance would not be affected after being repeatedly bent. | 2022-04-28 |
20220130574 | Flexible Power and/or Control Cable for Use on Moving Applications - The present disclosure relates to a flexible cable for use in moving applications, comprising: one or more insulated cores; a filler layer surrounding the one or more insulated cores, having an external surface defining a filler layer external perimeter substantially forming a closed convex polygonal chain with a plurality of line segments connecting consecutive vertices; and an outer sheath surrounding the filler layer and directly applied on the filler layer, having an external surface defining an outer sheath external perimeter forming a continuous closed curve. | 2022-04-28 |
20220130575 | POWER CABLE JOINT SYSTEM - The present disclosure relates to a power cable joint system capable of minimizing expansion, deformation or damage of a metal sheath restoration layer, which is formed of a material such as lead sheath, due to internal expansion due to heat generated in an intermediate connection part of the power cable joint system. | 2022-04-28 |
20220130576 | TEXTURED-POWDER Bi-2212/Ag WIRE AND METHOD OF FABRICATION - A composite billet includes an array of textured-powder bars in a geometry that is compatible with assembly and drawing of a billet with LAR ˜1:1. A method is presented of compressing the bars suitable for the billet geometry in an inert gas environment. Methods of drawing of the billet control the deformation of the composite billet during area-reducing draw to fine wire so that the shape and registration of the constituent bars is preserved. Lastly a method is disclosed to fabricate a cable-in-conduit conductor containing the textured-powder Bi-2212/Ag wires that enables robust forming of windings and also provides in-cable containment of a buffer gas flow under high pressure during the high-temperature heat treatment of the winding that is required to produce optimum superconducting performance in the winding. | 2022-04-28 |
20220130577 | GROMMET - The grommet includes an opposing portion | 2022-04-28 |
20220130578 | CHIP RESISTOR - A chip resistor includes a resistor body, a first upper surface electrode, a second upper surface electrode, and an upper surface protection film on an upper surface of a substrate. The upper surface protection film covers the entire surface of the resistor body and the entire surface of the first upper surface electrode and the second upper surface electrode. The upper surface protection film includes a peripheral portion that is entirely in contact with the upper surface of the substrate. | 2022-04-28 |
20220130579 | METHOD OF MANUFACTURING THERMISTOR - The present invention is provided with a base electrode layer forming step of forming a base electrode layer on both surfaces of a thermistor wafer formed of a thermistor material, a chip forming step of obtaining a thermistor chip with a base electrode layer by cutting the thermistor wafer to form chips, a protective film forming step of forming a protective film formed of an oxide on an entire surface of the thermistor chip with a base electrode layer, a cover electrode layer forming step of forming a cover electrode layer by applying and sintering a conductive paste on an end surface of the thermistor chip with a base electrode layer, and a conduction heat treatment step of performing a heat treatment such that the base electrode layer and the cover electrode layer are electrically conductive, in which the electrode portion is formed. | 2022-04-28 |
20220130580 | RARE EARTH MAGNET AND METHOD FOR PRODUCING THEREOF - To provide an R—Fe—B-based rare earth magnet excellent in the squareness and magnetic properties at high temperatures, and method for producing thereof. | 2022-04-28 |
20220130581 | MAGNETIC DEVICE - A magnetic device includes a fixed layer including a fixed pattern, a free layer, and a tunnel barrier between the fixed layer and the free layer. The fixed pattern includes a first magnetic pattern, a second magnetic pattern, and a hybrid spacer, including a nonmagnetic material layer, between the first magnetic pattern and the second magnetic pattern, the nonmagnetic material including a plurality of magnetic nanoparticles dispersed therein. | 2022-04-28 |
20220130582 | COIL COMPONENT - A coil component includes a core that includes a winding core portion and a coil that is wound around the winding core portion and that includes a plurality of wires. The coil includes a stranded wire portion that is formed by twisting the plurality of wires together. The stranded wire portion forms a bank region including a first layer that is formed by continuously winding the stranded wire portion around the winding core portion in a plurality of turns and a second layer that is continuous with the first layer and that is formed by winding the stranded wire portion around the first layer in a plurality of turns. The second layer has at least one pair of adjacent turns, and at least one pair of adjacent turns among all the pairs of adjacent turns are isolated from each other. | 2022-04-28 |
20220130583 | COIL COMPONENT - A coil component includes a winding core section. A first flange section and a second flange section are disposed on a first end and a second end of the winding core section in the axial direction, respectively. A second terminal electrode is disposed on the first flange section on a second end side in a first direction perpendicular to the axial direction. A fourth terminal electrode is disposed on the second flange section on a second end side in the first direction. When in a portion of the second wire wound around the winding core section, a single round nearest an end connected to the fourth terminal electrode is defined as the Nth turn, at least two turns of the wire closer to the second flange section than the Nth turn of the second wire in the axial direction are present. | 2022-04-28 |
20220130584 | CIRCUIT STRUCTURE, ELECTRICAL JUNCTION BOX, AND METHOD FOR MANUFACTURING CIRCUIT STRUCTURE - A circuit structure includes: a circuit substrate provided with a conductive path and through holes that are electrically connected to the conductive path; a coil apparatus that includes coils | 2022-04-28 |
20220130585 | STACKED ELECTRONIC MODULE AND METHOD TO MAKE THE SAME - A stacked electronic module includes a magnetic device comprising a magnetic body with electrodes of the magnetic device being disposed on a top and bottom surface of the magnetic body, wherein a molding body encapsulates the magnetic body, wherein conductive layers are disposed on a top and bottom surface of the molding body for electrically connected to the electrodes of the magnetic device. | 2022-04-28 |
20220130586 | MAGNETIC ELEMENT - A magnetic element includes a first magnetic core, a second magnetic core, a first winding and a second winding. The first magnetic core includes a first lateral core part, a second lateral core part and a first middle core part between the first lateral core part and the second lateral core part. The second magnetic core includes a third lateral core part, a fourth lateral core part and a second middle core part between the third lateral core part and the fourth lateral core part. The third lateral core part is located beside the first middle core part. The second middle core part is located beside the second lateral core part. The first winding is wound around the first middle core part and the third lateral core part. The second winding is wound around the second middle core part and the second lateral core part. | 2022-04-28 |
20220130587 | MAGNETIC ELEMENT AND MANUFACTURING METHOD THEREOF - A magnetic element includes a magnetic core assembly and a winding assembly. The magnetic core assembly includes a first magnetic part. The winding assembly includes a first winding. The first winding is wound around the first magnetic part. Moreover, at least a portion of a substrate is formed as the first winding. The substrate includes a first accommodation space and a first metal structure. Moreover, at least a portion of the first metal structure is formed as at least a portion of the first winding and disposed on four lateral surfaces of the first accommodation space, and at least a portion of the first magnetic part is disposed within the first accommodation space. | 2022-04-28 |
20220130588 | REACTOR AND ELECTRIC POWER CONVERSION DEVICE - A reactor includes a core and first to fourth coils wound around the core and magnetically coupled to one another. A coupling coefficient K | 2022-04-28 |
20220130589 | APPARATUS FOR A DC-DC CONVERTER INDUCTOR - An apparatus includes at least one top magnetic core comprising a first material with a first resistivity. The apparatus further includes at least one bottom magnetic core coupled to the at least one top magnetic core, the at least one bottom magnetic core comprising a second material with a second resistivity and at least one internal conductor coupled to the at least one top magnetic core and the at least one bottom magnetic core. | 2022-04-28 |
20220130590 | INDUCTOR DEVICE - An inductor device includes a first inductor, a first connection member, a second inductor, and a second connection member. The first inductor includes a first and a second trace. The first trace is disposed in a first area, and the second trace is disposed in a second area. The first and the second area are connected at a junction. The first connection member is disposed at a block at which the first and the second trace are not disposed, and coupled to the first and the second trace. The second inductor includes a third and a fourth trace. The third trace is disposed in the first area, and the fourth trace is disposed in the second area. The second connection member is disposed at a block at which the third and the fourth trace are not disposed, and coupled to the third and the fourth trace. | 2022-04-28 |
20220130591 | INDUCTOR DEVICE - An inductor device includes a first and a second inductor and a first and a second connection member. A first and a second trace of the first inductor is located on a first and a second layer respectively. The second trace is coupled to the first trace located at a first and a second area. The first connection member is coupled to the second trace. A third and a fourth trace of the second inductor is located on the first and the second layer respectively. The first trace and the third trace are disposed in turn at the first area and the second area. The fourth trace is coupled to the third trace located at the first and the second area. The second and the fourth trace are disposed in turn at the first and the second area. The second connection member is coupled to the fourth trace. | 2022-04-28 |
20220130592 | MULTILAYER RESIN SUBSTRATE AND METHOD OF MANUFACTURING MULTILAYER RESIN SUBSTRATE - A multilayer resin substrate includes a stacked body and a coil including coil conductor patterns. A first coil conductor pattern includes a first non-overlapping portion not overlapping with a second coil conductor pattern, when viewed in a Z-axis direction. A second coil conductor pattern includes a second non-overlapping portion not overlapping with the first coil conductor pattern, when viewed in the Z-axis direction. The first non-overlapping portion protrudes more to an outer peripheral side in a radial direction than the second coil conductor pattern, and the second non-overlapping portion protrudes to an inner peripheral side in the radial direction. | 2022-04-28 |
20220130593 | MULTILAYER RESIN SUBSTRATE AND METHOD OF MANUFACTURING MULTILAYER RESIN SUBSTRATE - A multilayer resin substrate includes a stacked body, and a coil including a first coil conductor pattern and a second coil conductor pattern. The second coil conductor pattern includes a wide portion with a line width larger than a line width of the first coil conductor pattern. The wide portion includes overlapping portions that overlap with the first coil conductor pattern, and non-overlapping portions that do not overlap with the first coil conductor pattern, when viewed in a Z-axis direction. Adjacent non-overlapping portions in the Z-axis direction, when viewed in the Z-axis direction, protrude in opposite directions to each other in a radial direction, with respect to the first coil conductor pattern. | 2022-04-28 |
20220130594 | MULTILAYER COIL COMPONENT - A multilayer coil component includes an element body, a coil disposed in the element body, and an external electrode disposed in the element body and electrically connected to the coil. The element body includes a principal surface that is a mounting surface, and an end surface positioned adjacent to the principal surface and extending in a direction crossing to the principal surface. The external electrode includes an underlying metal layer and a conductive resin layer. The underlying metal layer is formed on the principal surface and the end surface. The conductive resin layer is formed to cover the underlying metal layer. A thickness of the conductive resin layer at an end positioned above the principal surface of the underlying metal layer is equal to or greater than 50% of a maximum thickness of a portion positioned above the principal surface of the conductive resin layer. | 2022-04-28 |
20220130595 | COIL COMPONENT AND MANUFACTURING METHOD THEREFOR - Disclosed herein is a coil component that includes a coil pattern embedded in an element body and helically wound in a plurality of turns. The element body includes a support body having a cavity formed therein and a first insulating layer stacked on the support body so as to cover the cavity, thereby forming a hollow space inside the element body. The coil pattern includes a plurality of first sections formed along an inner wall of the cavity and a plurality of second sections formed on the first insulating layer. One ends of the plurality of first sections are connected respectively to their corresponding one ends of the plurality of second sections. The other ends of the plurality of first sections are connected respectively to their corresponding other ends of the plurality of second sections. | 2022-04-28 |
20220130596 | COIL COMPONENT AND MANUFACTURING METHOD THEREFOR - Disclosed herein is a coil component that includes a coil pattern embedded in a resin body. The resin body includes a winding core area surrounded by the coil pattern and having a first surface and a substantially flat second surface different in the circumferential direction position from the first surface, and a first surrounding area covering the first surface of the winding core area. The coil pattern includes first sections extending along the first surface of the winding core area and second sections extending along the second surface of the winding core area. One ends of the first sections are connected respectively to their corresponding one ends of the second sections. The other ends of the first sections are connected respectively to their corresponding other ends of the second sections. | 2022-04-28 |
20220130597 | COIL COMPONENT - A coil component includes a core that has a columnar winding core portion and a flange formed at an end of the winding core portion in an axial direction. The coil component also includes a terminal electrode formed at an end surface of the flange and a wire being wound around the winding core portion with one end portion coupled to the terminal electrode. The flange protrudes toward the first end of the coil component in the first direction. A curved surface and an inclined surface are formed at a boundary between a surface of the flange and a peripheral surface of the winding core portion. The inclined surface has a curvature smaller than that of the curved surface. In addition, the inclined surface is disposed where the wire intersects the boundary as viewed in the first direction. | 2022-04-28 |
20220130598 | INDUCTOR - An inductor at least includes an iron-core, a first coil and a second coil. A first coil terminal of the first coil is fixed at a first terminal and a second coil terminal of the second coil is fixed at a second terminal. The first coil and the second coil are wound around the iron-core using a symmetric winding manner, the symmetric winding manner at least includes a first winding manner, a second winding manner and a third winding manner. A third coil terminal of the first coil is fixed at a third terminal and a fourth coil terminal of the second coil is fixed at a fourth terminal. The second winding manner and the third winding manner are manners of a turn of either the first coil or the second coil crossing over a turn of either the second coil or the first coil. | 2022-04-28 |
20220130599 | Magnetic Device and the Method to Make the Same - A recess is formed on a bottom surface of a body of an inductor, wherein an electrode for connecting to a ground is disposed in the recess, and an electrode connecting with a coil of the inductor is disposed on a protruding portion adjacent to the recess. | 2022-04-28 |
20220130600 | INDUCTOR COMPONENT AND INDUCTOR COMPONENT MOUNTING SUBSTRATE - An inductor component includes a component body having a mounting surface and a top surface and provided therein with a spiral inductor wiring line advancing in the extending direction of a winding center axis. The inductor wiring line is connected to a first external electrode at a first end, and connected to a second external electrode at a second end. The component body includes: a first inclined surface connected to a first end of the mounting surface on a first side in a length direction and inclined toward the top surface as separating from the first end; and a second inclined surface connected to a second end of the mounting surface on a second side in the length direction and inclined toward the top surface as separating from the second end. The winding center axis extends in a direction parallel to the mounting surface and perpendicular to the length direction. | 2022-04-28 |
20220130601 | COIL COMPONENT - Disclosed herein is a coil component that includes a resin body having a first resin-based insulating material and a second resin-based insulating material lower in relative permittivity than the first resin-based insulating material, a coil pattern embedded in the resin body and helically wound in a plurality of turns, and first and second terminal electrodes formed on a surface of the resin body and connected respectively to one and other ends of the coil pattern. The coil pattern has a part covered with the first resin-based insulating material and another part covered with the second resin-based insulating material. | 2022-04-28 |
20220130602 | Transformer And Method For Manufacturing Transformer - A method is provided for manufacturing a transformer. The method includes preparing a core, a first coil portion that covers at least part of the core, and a second coil portion that covers a periphery of the first coil portion perpendicular to a central axis of winding of the first coil portion. The first and second coil portions each include a bobbin and a coil wound therearound. The coil of the first or second coil portion is an edgewise coil. The method also includes: screwing the bobbin and coil of the first coil portion with each other, and screwing the bobbin and coil of the second coil portion with each other; and attaching the second coil portion to the outside of the first coil portion perpendicular to the central axis of winding of the first coil portion, and attaching the core to sandwich the first and second coil portions in an axial direction of the first coil portion. | 2022-04-28 |
20220130603 | Magnetic Device and the Method to Make the Same - At least one shielding layer made of conductive material is formed on a body of an inductor, wherein at least one portion of the top surface of the body is exposed from the shielding layer, so as to provide an exhaust channel for moisture inside the body to leak to the outside of the body, thereby preventing the residual moisture from deforming the inductor due to thermal expansion. | 2022-04-28 |
20220130604 | WIRELESS POWER RECEPTION APPARATUS AND A METHOD OF MANUFACTURING THE SAME - A method of manufacturing a wireless power reception apparatus includes: forming a lower tray that includes a thermally conductive material and accommodates and fix a coil winding; arranging a coil winding on the lower tray; forming a magnetic field shielding plate so as to accommodate and fix a plurality of magnetic tiles at predetermined intervals; forming a coupled member of a magnetic tiles-magnetic field shielding plate by arranging the plurality of magnetic tiles at the predetermined intervals on the magnetic field shielding plate; forming a thermally conductive polymer molding layer by applying a thermally conductive polymer molding solution to fill spaces between the coil winding and the coupled member of a magnetic tiles-magnetic field shielding plate and bonding the plurality of magnetic tiles and the coil winding such that the plurality of magnetic tiles are positioned over the coil winding; and curing the thermally conductive polymer molding layer. | 2022-04-28 |
20220130605 | MAGNETIC ELEMENT AND MANUFACTURING METHOD THEREOF - A magnetic element includes a magnetic core assembly and a winding assembly. The magnetic core assembly includes a first magnetic part and a second magnetic part arranged independently. The winding assembly includes a first winding. The first winding is wound around the first magnetic part. Moreover, at least a portion of a substrate is formed as the first winding. The substrate includes a first accommodation space, a second accommodation space and a first metal structure. Moreover, at least a portion of the first metal structure is formed as at least a portion of the first winding. At least a portion of the first magnetic part and at least a portion of the second magnetic part are disposed within the first accommodation space and the second accommodation space, respectively. The substrate has an integral structure. | 2022-04-28 |
20220130606 | LAMINATED IRON CORE - Provided is a laminated iron core in which joining failure between adjacent steel sheets thereof is less likely to occur, even if a distance between the adjacent steel sheets (thickness of an adhesive layer) is reduced. 1. The laminated iron core comprises a plurality of steel sheets laminated together while an adhesive layer is interposed between any adjacent two of the steel sheets, wherein the adhesive layer is comprised of a thermosetting resin composition containing an epoxy resin, an amino triazine novolac-based phenolic resin, an acrylic acid ester-based polymer, and inorganic particles having an average particle size of 10 nm to 100 nm, and a maximum particle size of 1 μm or less, and wherein: the content in volume percentage of the inorganic particles in the adhesive layer is from 5 vol % to 30 vol %; the adhesive layer having a Young's modulus of 2 GPa to 6 GPa as measured at 25° C. by a nanoindentation technique; and a distance between the adjacent steel sheets being from 0.5 μm to 5 μm. | 2022-04-28 |
20220130607 | ADDITIVE MANUFACTURE OF ANISOTROPIC RARE EARTH MAGNETS - A magnet structure includes columnar grains of rare earth permanent magnet phase aligned in a same direction and arranged to form bulk anisotropic rare earth alloy magnet having a boundary defined by opposite ends of the columnar grains and lacking triple junction regions, and rare earth alloy diffused onto opposite ends of the bulk anisotropic rare earth alloy magnet. | 2022-04-28 |
20220130608 | DIELECTRIC CERAMIC AND MULTILAYER CERAMIC CAPACITOR - A dielectric ceramic that includes multiple crystal grains, each of the multiple crystal grains having an interface, a barium titanate (BaTiO | 2022-04-28 |
20220130609 | MULTILAYER CERAMIC ELECTRONIC COMPONENT - A multilayer ceramic electronic component may include: a ceramic body including a dielectric layer and first and internal electrodes disposed to be stacked with the dielectric layer interposed therebetween; a first and a second external electrode disposed on the ceramic body. The first and the second external electrodes may include a first and a second base electrode layers disposed in contact with the ceramic body and a first and a second resin electrode layers disposed on the first and the second base electrode layer respectively, a width of the ceramic body in the second direction may be less than 1.0 mm, and 0.4×ta≤tb≤0.5×ta in which ta is an average thickness of the first base electrode layer and tb is an average thickness of the first resin electrode layer. | 2022-04-28 |
20220130610 | MULTILAYER CERAMIC CAPACITOR - A multilayer ceramic capacitor includes a stacked body and external electrodes. The stacked body includes stacked dielectric layers and internal electrodes. The external electrodes are disposed on lateral surfaces of the stacked body and are connected to the internal electrodes. A ratio of min to max is not less than about 36% and not more than about 90%, where A | 2022-04-28 |
20220130611 | FILM CAPACITOR - A film capacitor that includes: a laminate including a first dielectric film, a second dielectric film, a first metal layer, and a second metal layer laminated in a laminate direction; a first external electrode on a first end surface of the laminate in a width direction perpendicular to the laminate direction and connected to the first metal layer; and a second external electrode on a second end surface of the laminate in the width direction, the first external electrode having first protrusions arranged in the laminate direction and protruding toward the second external electrode in the width direction, at least one of the first protrusions of the first external electrode having a first protrusion end with a width greater than a total thickness of the first dielectric film and the second dielectric film by two times or more. | 2022-04-28 |
20220130612 | MULTILAYER CAPACITOR - A multilayer capacitor includes a body including a multilayer structure in which a plurality of dielectric layers are stacked, and further including a plurality of internal electrodes having a dielectric layer interposed therebetween and external electrodes disposed on external surfaces of the body and connected to the internal electrodes. The body further includes an active portion in which the plurality of internal electrodes are located to form capacitance and a side margin portion covering a first surface and a second surface of the active portion opposing each other. An average grain size of a dielectric layer included in the active portion is different from an average grain size of a dielectric layer included in the margin portion. The side margin portion includes an extending portion extending between the external electrodes and the internal electrodes to cover a portion of the internal electrodes. | 2022-04-28 |
20220130613 | ELECTRONIC COMPONENT AND BOARD HAVING THE SAME - An electronic component includes: a multilayer capacitor including a capacitor body and first and second external electrodes respectively disposed on opposing end surfaces of the capacitor body; and an ESD member disposed on a first side surface of the multilayer capacitor perpendicular to a mounting surface of the multilayer capacitor, such that the ESD of the multilayer capacitor may be effectively controlled. | 2022-04-28 |
20220130614 | ELECTRONIC COMPONENT AND BOARD HAVING THE SAME - There are provided an electronic component and a board including the same. The electronic component includes: a capacitor body; a pair of external electrodes respectively disposed on both ends of the capacitor body; and a pair of metal frames including a pair of connection portions connected to the pair of external electrodes, respectively, and a pair of mounting portions connected to the pair of connection portions, respectively. A bottom surface of one of the pair of mounting portions has roughness. | 2022-04-28 |
20220130615 | CERAMIC ELECTRONIC COMPONENT AND METHOD OF MANUFACTURING THE SAME - A ceramic electronic component includes a body including a dielectric layer and an internal electrode; and an external electrode disposed on the body and connected to the internal electrode. The dielectric layer includes a plurality of crystal grains and a grain boundary disposed between adjacent crystal grains. A ratio (C2/C1) of an Mg content (C2) of the grain boundary to an Mg content (C1) of at least one of the plurality of crystal grains is 3 or more. | 2022-04-28 |
20220130616 | MULTI-LAYER CERAMIC CAPACITOR AND METHOD OF PRODUCING THE SAME - A multi-layer ceramic capacitor includes a first region, a second region, a multi-layer unit, and a side margin. In the first region, crystal grains including intragranular pores are dispersed. In the second region, crystal grains including intragranular pores are not dispersed. The multi-layer unit includes ceramic layers that are laminated in a first direction and include the second region, and internal electrodes disposed between the ceramic layers. The side margin covers the multi-layer unit from a second direction orthogonal to the first direction and includes a region, the region being adjacent to the multi-layer unit and including the first region. | 2022-04-28 |
20220130617 | THREE-TERMINAL CAPACITOR AND ELECTRONIC COMPONENT - A three-terminal capacitor includes a main body having a cylindrical or substantially cylindrical shape extending in a first direction and including first and second inner electrodes alternately laminated together with dielectric layers interposed therebetween, a pair of first outer electrodes on two end surfaces of the main body in the first direction and electrically connected to the first inner electrodes, and a second outer electrode electrically connected to the second inner electrodes. The main body includes a projecting portion projecting in a direction perpendicular or substantially perpendicular to the first direction at a position between the pair of first outer electrodes. The second outer electrode is provided on one surface of the projecting portion viewable when viewed in the first direction. | 2022-04-28 |
20220130618 | A METAMATERIAL-BASED VARIABLE CAPACITOR STRUCTURE - The present invention discloses a metamaterial-based variable capacitor structure, comprising the first substrate, the second substrate, the metamaterial dielectric layer, the metal floor layer between the first substrate and the metamaterial dielectric layer, the gaps and isolation holes periodically arranged on metal floor layer, the microstrip line between the second substrate and the metamaterial dielectric layer, the periodically loaded branches, the bias line and the choke branch on the microstrip line, and two feeding terminals on both ends of microstrip line. The capacitance value of the metamaterial-based capacitor with variable dielectric constant is adjusted by controlling the voltage applied to the said bias line, thereby realizing the time-frequency response, frequency selection, phase shift control, transmission matching, etc. based on the variable capacitor structure. | 2022-04-28 |
20220130619 | METHOD FOR MANUFACTURING ELECTROLYTIC CAPACITOR - A method for manufacturing an electrolytic capacitor is provided. A crosslinking agent is applied onto a capacitor body. A solution containing a conjugated polymer is applied onto the capacitor body after applying the crosslinking agent. A part of a solvent of the solution is removed, so as to form a polymer outer layer onto the capacitor body. The capacitor body includes an electrode body, an electrode material, a dielectric layer, and a solid electrolyte. The electrode material is formed on the electrode body. A surface of the electrode material is covered by the dielectric layer. The dielectric layer is covered by the solid electrolyte. The electrode body or the solid electrolyte is formed from at least one of polythiophene having at least one sulfonic acid group and polyselenophene having at least one sulfonic acid group. | 2022-04-28 |
20220130620 | METHOD FOR PRODUCING A PLATE ARRANGEMENT - The invention relates to a method of producing a plate arrangement comprising two plates ( | 2022-04-28 |
20220130621 | HYBRID FIBER FOR DETECTION OF UV LIGHT - A hybrid fiber for detection of UV light is described. The hybrid fiber includes a conductor, a first layer, a photoactive layer, a second layer, and a transparent electrode. The conductor includes a conductive material. The first layer includes a first material deposited onto the conductor. The first material is configured to transport holes and block electrons. The photoactive layer includes a photoactive material coating the first layer. The photoactive material includes a first submaterial and a second submaterial. The second layer includes a second material deposited onto the photoactive layer. The second material is configured to block holes and transport electrons. The transparent electrode includes a transparent electrode material deposited onto the second layer. | 2022-04-28 |
20220130622 | Ultracapacitor Module with Improved Vibration Resistance - An ultracapacitor module is disclosed. The ultracapacitor module comprises: an enclosure, and a plurality of ultracapacitors housed within the enclosure wherein at least one ultracapacitor of the plurality of ultracapacitors is secured to the enclosure. The ultracapacitor module satisfies one or more of the following conditions upon being subjected to a vibration profile in accordance with ISO 16750-3-2012, Table 12 and IEC 60068-2-64: a capacitance within a rated capacitance value as determined in accordance IEC 62391-1, Method 1A, an equivalent series resistance within a rated equivalent series resistance value as determined in accordance IEC 62391-1, a leakage current within a rated leakage current value as determined in accordance IEC 62391-1, an operating voltage with a rated operating voltage value. | 2022-04-28 |
20220130623 | Surface Mountable Ultracapacitor Device Including a Resin Layer Having Vents - A surface mountable ultracapacitor device is disclosed. The device comprises: a package including sidewalls extending in a direction generally perpendicular to a base to define an upper end wherein an interior cavity is defined between an inner surface of the base and the sidewalls; first and second conductive members disposed on the inner surface of the base; first and second external terminations on the outer surface of the base and electrically connected to the first and second conductive members, respectively; an ultracapacitor positioned within the interior cavity and including a housing and an electrode assembly and electrolyte within the housing, the ultracapacitor including first and second leads electrically connected to the first and second conductive members, respectively; a resin provided within the interior cavity and encapsulating at least a portion of the ultracapacitor; and one or more vents extending through the resin and at least to a surface of the resin. The present invention also discloses a printed circuit board including the aforementioned surface mountable ultracapacitor device as well as a communications device including the aforementioned surface mountable ultracapacitor device. | 2022-04-28 |
20220130624 | MEMS SWITCH - A MEMS switch includes: a housing, a switching assembly; a first actuation electrode, a first contact, a second contact, and a second actuation electrode. The switching device has a stress gradient along the thickness direction, such that in response to applying no voltage between the first actuation electrode and the second actuation electrode, the switching assembly contacts with the first contact. In response to applying a first voltage between the third actuation electrode and the fourth actuation electrode, the switching assembly is driven to deflect such that the switching assembly is spaced apart from both the first contact and the second contact. In response to applying a second voltage between the third actuation electrode and the fourth actuation electrode, the switching assembly is driven to deflect such that the switching assembly contacts with the second contact. The first voltage is smaller than the third voltage. | 2022-04-28 |
20220130625 | Operation Switch Unit with Operation Support Function, Operation Unit with Operation Support Function, and Operation Support System - The emergency stop switch | 2022-04-28 |
20220130626 | KEYBOARD CONTAINING RECYCLED AND RENEWABLE POLYMERIC COMPOSITIONS - A keyboard having a total recycled and renewable content of equal to or greater than 35 wt. %, based on the total weight of the keyboard is described. The keyboard contains a key cap containing a mechanically recycled polycarbonate polymer or a chemically recycled cellulose based polymer, a pair of cross arms forming a scissor-shaped structure containing a polymeric composition containing 60 wt. % to 100 wt. % of a polyoxymethylene polymer, and 0 wt. % to 40 wt. % of a filler containing glass, and a back light module containing a renewably source polycarbonate polymer or a chemically recycled polyester polymer. | 2022-04-28 |
20220130627 | Splitter Plate, Arc Extinguishing Chamber And Switching Device - A splitter plate for an arc extinguishing chamber in a switching device, the splitter plate including a base portion; a pair of arms extending from the base portion; a recess for a movable contact defined between the arms; and a slot in each arm; wherein the recess is arranged between the slots. An arc extinguishing chamber for a switching device is also provided. A switching device for breaking an electric current, the switching device including a plurality of splitter plates or an arc extinguishing chamber is also provided. | 2022-04-28 |
20220130628 | DC VOLTAGE SWITCH - A DC voltage switch includes a first switch arranged at a first potential between a first terminal of the first switch and a second terminal of the first switch, a first discharging device which is arranged between the first terminal at the first potential and a third terminal at a second potential and includes a first switching element designed as a thyristor, and a second discharging device which is arranged between the second terminal and a fourth terminal at the second potential and includes a second switching element designed as a semiconductor switch that can be switched off. The respective discharging devices connect the first terminal and the third terminal and/or the second terminal and the fourth terminal, at least temporarily, when the DC voltage switch is being or has been switched off. | 2022-04-28 |
20220130629 | APPARATUS AND METHOD FOR INHIBITING ELECTROMAGNETIC RELAY FROM BEING FROZEN - A control unit includes: an input portion that receives the positional information of a vehicle; a calculation unit that generates a control signal for controlling an electromagnetic relay; and an output portion that outputs the control signal to the electromagnetic relay. The calculation unit determines whether a location region of the electromagnetic relay is a relay-freeze region, the location region being identified by the positional information of the vehicle, and, when the location region of the electromagnetic relay is a relay-freeze region, performs a freeze inhibiting process for preventing the electromagnetic relay from being frozen or defrosting the electromagnetic relay by opening and closing the electromagnetic relay and causing the electromagnetic relay to vibrate. | 2022-04-28 |
20220130630 | BI-STABLE ELECTROMAGNETIC ACTUATOR - A bistable electromagnetic actuator is described. The actuator includes a mobile assembly and a fixed assembly. The mobile assembly includes at least one pair of ferromagnetic plunger-cores, a frame integrally connecting the plunger-cores, and a guiding element. The fixed assembly includes a ferromagnetic core having cavities defined on each of its two sides configured to receive a corresponding one of the plunger-cores, at least one magnet positioned between the cavities in the core and being able to create a first magnetic flux, at least one coil operable via an excitation current to create a second magnetic flux, and a guiding element adapted to cooperate with the guiding element of the mobile assembly to allow the mobile assembly to move between a first and a second stable position. Methods for actuating the bistable electromagnetic actuator are also described. | 2022-04-28 |
20220130631 | SYSTEMS AND METHODS FOR PROVIDING FLUID-AFFECTED FUSES - A fluid-affected fuse includes a structural housing, a pair of electric terminals, one or more fuse elements, and a fluid arranged in an internal volume of the structure. The structure provides rigidity to the fuse. The terminals are coupled to the structural housing and are configured to be coupled to an electric power circuit of a battery circuit. The one or more fuse elements are electrically connected in series to the pair of electric terminals and are arranged in the internal volume. The fluid is configured to affect a temperature of the fuse element. A fluid-filled fuse is filled with fluid, optionally sealed, and operated with the increased heat capacity of the fluid to affect temperature of the fuse. A fluid-cooled fuse is filled with the fluid, undergoing a stream of the fluid thus allowing control of fuse temperature. A control system controls the fluid stream and fuse operation. | 2022-04-28 |
20220130632 | X-Ray Tube Backscatter Suppression - Electrons can rebound from an x-ray tube target, causing electrical-charge build-up on an inside of the x-ray tube. The charge build-up can increase voltage gradients inside of the x-ray tube, resulting in arcing failure of the x-ray tube. Also, the electrical charge can build unevenly on internal walls of the x-ray tube, causing an undesirable shift of the electron-beam. An x-ray tube ( | 2022-04-28 |
20220130633 | SCHOTTKY THERMAL FIELD EMITTER WITH INTEGRATED BEAM SPLITTER - A Schottky thermal field emitter (TFE) source integrated with a beam splitter by a standoff, which supports the beam splitter above the Schottky TFE extractor faceplate by a distance of 0.05 mm to 2 mm. The beam splitter includes a microhole array integrated with the standoff and being disposed opposite the extractor faceplate, the microhole array having a plurality of microholes that split the electron beam generated by the Schottky TFE into a plurality of beamlets. The support and extractor may be fabricated from the same material or from different materials. The support may be formed from a high temperature resistive material, which causes a potential difference between the extractor and the microhole array. This potential difference creates positively charged electrostatic lenses at the microholes, which increases current in the individual beamlets. Voltage on the microarray plate may be varied to achieve a high beamlet current. | 2022-04-28 |
20220130634 | Emitter, Electron Gun Using Same, and Electronic Device - The purpose of the present invention is to provide an emitter capable of easily and highly efficiently emitting electrons, an electron gun using same, and an electronic device. | 2022-04-28 |
20220130635 | RADIATION GENERATION APPARATUS AND RADIATION GENERATION METHOD - Provided is a radiation generation apparatus that can be downsized while improving power efficiency compared with a normal conduction accelerating tube. The radiation generation apparatus includes: an accelerating tube in which an accelerating cavity is defined by a tubular-shaped housing having conductivity and a plurality of cells made of a dielectric material, center openings of the cells being aligned so as to be communicated with each other in a direction in which the cells are arranged in the housing; an RF amplifier that supplies a high-frequency power to the accelerating tube; and an electron gun that emits a charged particle passing through the opening of each of the cells in the accelerating tube. | 2022-04-28 |
20220130636 | ION IMPLANTER, ION IMPLANTATION METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - An ion implanter includes a crucible provided inside a vacuum chamber, and including an internal space configured to accommodate a solid sample which is a raw material of a source gas, a laser source provided outside the vacuum chamber, and irradiating the crucible with a laser beam, an arc chamber including an internal space for converting the source gas into plasma to generate ions, and in which an ion beam is extracted from the internal space, and a nozzle connecting the internal space of the crucible and the internal space of the arc chamber, and introducing the source gas vaporized in the internal space of the crucible into the internal space of the arc chamber. | 2022-04-28 |
20220130637 | ELECTRON MICROSCOPE SAMPLE HOLDER FLUID HANDLING WITH INDEPENDENT PRESSURE AND FLOW CONTROL - A fluid metering system for gas independent pressure and flow control through an electron microscope sample holder includes: a pressure control system that supplies gas; an inlet line providing gas from the pressure control system to the sample holder; an outlet line receiving gas from the sample holder; and a variable leak valve that controls gas flow in the outlet line. The gas flows from an upstream tank of the pressure control system through the sample holder and variable leak valve to a downstream tank of the pressure control system due to the pressure difference of the two tanks as the variable leak valve meters flow in the outlet line. Flow rates are established by monitoring pressure changes at source and collection tanks of known volumes with gas independent pressure gauges. A method of directing the gas flow to a residual gas analyzer (RGA) is also presented. | 2022-04-28 |
20220130638 | CHARGED PARTICLE BEAM DEVICE - Provided is a charged particle beam device capable of focusing with high accuracy even when a charged particle beam has a large off-axis amount. The charged particle beam device generates an observation image of a sample by irradiating the sample with a charged particle beam, and includes: a deflection unit that inclines the charged particle beam; a focusing lens that focuses the charged particle beam; an adjustment unit that adjusts a lens strength of the focusing lens based on an evaluation value calculated from the observation image; a storage unit that stores a relationship between a visual field movement amount and the lens strength; and a filter setting unit that calculates the visual field movement amount based on an inclination angle of the charged particle beam and the relationship, and sets an image filter to be superimposed on the observation image based on the calculated visual field movement amount. | 2022-04-28 |
20220130639 | ABLATING MATERIAL FOR AN OBJECT IN A PARTICLE BEAM DEVICE - The invention relates to a method for ablating a material ( | 2022-04-28 |
20220130640 | METHOD FOR OPERATING A MULTIPLE PARTICLE BEAM SYSTEM WHILE ALTERING THE NUMERICAL APERTURE, ASSOCIATED COMPUTER PROGRAM PRODUCT AND MULTIPLE PARTICLE BEAM SYSTEM - A method includes operating a multiple particle beam system at different working points. The numerical aperture can be set for each of the working points in such a way that the resolution of the multiple particle beam system is optimal. In the process, the beam pitch between adjacent individual particle beams on the sample to be scanned is kept constant as a boundary condition. There are no mechanical reconfigurations of the system whatsoever for the purposes of varying the numerical aperture. | 2022-04-28 |
20220130641 | METHOD OF PRODUCING IONS AND APPARATUS - A method of producing hydrogen ions includes generating a diode-type HF plasma PL. This allows to set or adjust the energy of ions output by the plasma source in an improved manner. | 2022-04-28 |
20220130642 | METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE - Methods and apparatus for processing a substrate are provided herein. For example, apparatus can include a first voltage/current (V/I) probe configured to connect to an input side of a matching network of the processing chamber and a second V/I probe configured to connect to an output side of the matching network and a processor coupled to the first V/I probe and the second V/I probe and configured to, based on a phase gap between a V and I of an RF signal detected by at least one of the first V/I probe or the second V/I probe at a target frequency, detect a minimum phase gap between the V and I, and control at least one of impedance tuning of the matching network or process control of the processing chamber using at least one of a peak or RMS of V, I and phase measured at the target frequency or under sweeping frequency. | 2022-04-28 |
20220130643 | PLASMA PROCESSING APPARATUS - There is provided a plasma processing apparatus. The apparatus comprises: a chamber body; and a power supply unit configured to output power for exciting a gas supplied to an inside of the chamber body. The power supply unit supplies, as power having a center frequency, a bandwidth, and a carrier pitch respectively corresponding to a set frequency, a set bandwidth, and a set carrier pitch that are indicated by a controller, power which is pulse-modulated so as to be a pulse frequency, a duty ratio, a high level, and a low level respectively corresponding to a set pulse frequency, a set duty ratio, a high-level set power, and a low-level set power indicated by the controller, and in which a pulse on time determined by the set pulse frequency and the set duty ratio is longer than a power fluctuation cycle of the power having the bandwidth. | 2022-04-28 |
20220130644 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND CONDUCTIVE MEMBER - A plasma processing apparatus includes: a chamber including a first member, and a second member detachable from the first member; a conductive member disposed between the first member and the second member; and a first high frequency power supply generating plasma in the chamber. The conductive member includes a resin member made of a resin material, and a metal film covering a surface of the resin member. | 2022-04-28 |
20220130645 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a cylindrical chamber defining a processing space in which a substrate is processed, and a member constituting an outer circumference of the cylindrical chamber. The member includes at least one flow path inlet configured to allow a heat transfer medium to flow in therethrough, at least one flow path outlet configured to allow the heat transfer medium to flow out therethrough, at least one flow path connecting the flow path inlet and the flow path outlet to one another to allow the heat transfer medium to flow therethrough, and at least one folded-back portion formed in the flow path. The flow path inlet and the flow path outlet are located close to each other, and the flow path is formed at a specific angle in a circumferential direction of the member. | 2022-04-28 |
20220130646 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes: a chamber; a first lower electrode provided inside the chamber and having a substrate placement region on which a substrate is placed; a second lower electrode disposed in a region outside the substrate placement region; a first upper electrode disposed to face the substrate placement region; a second upper electrode disposed in a region outside the first upper electrode to face the second lower electrode; and a first power supply configured to supply a first periodic signal to the first lower electrode, wherein at least one of the second lower electrode and the second upper electrode includes a recess, and the second lower electrode or the second upper electrode is located on a normal line with respect to a surface of the recess. | 2022-04-28 |
20220130647 | BATCH TYPE SUBSTRATE PROCESSING APPARATUS - Provided is a batch type substrate processing apparatus that supplies a process gas decomposed in a discharge space, which is distinguished from a processing space, into the processing space. The batch type substrate processing apparatus includes a reaction tube configured to provide a processing space, a plasma forming part having a discharge space, which is distinguished from the processing space by a partition wall and generating plasma in the discharge space by a plurality of electrodes extending along a longitudinal direction of the reaction tube. The plurality of electrodes includes a plurality of power supply electrodes spaced apart from each other and a plurality of ground electrodes provided between the plurality of power supply electrodes. | 2022-04-28 |
20220130648 | SUBSTRATE TREATING APPARATUS AND SUBSTRATE TRANSFERRING METHOD - The inventive concept provides a substrate treating apparatus. The substrate includes a process chamber in which a substrate is treated, and a transfer robot that transfers the substrate and a focusing ring provided in a treatment space of the process chamber to the treatment space and having a hand, wherein the process chamber includes a treatment container that provides the treatment space, a chuck having a support surface supporting the substrate in the treatment space, and a lift pin module that lifts a lower surface of the focusing ring in a state in which the substrate is supported by the focusing ring, and the chuck is provided as a blocking plate in which a lift pin hole is not formed. | 2022-04-28 |
20220130649 | SEMICONDUCTOR PROCESSING CHAMBER ARCHITECTURE FOR HIGHER THROUGHPUT AND FASTER TRANSITION TIME - Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body along a first surface of the lid plate. The lid plate may define a plurality of apertures through the lid plate. The lid plate may further define a recess about each aperture of the plurality of apertures in the first surface of the lid plate. Each recess may extend partially through a thickness of the lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures. Each recess may receive at least a portion of one of the lid stacks of the plurality of lid stacks. The plurality of lid stacks may at least partially define a plurality of processing regions vertically offset from the transfer region. | 2022-04-28 |
20220130650 | PROCESSING CHAMBER DEPOSITION CONFINEMENT - Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The system may include a substrate support extending through the base of the chamber body. The chamber body may define an access circumferentially extending about the substrate support at the base of the chamber body. The system may include one or more isolators disposed within the chamber body. The one or more isolators may define an exhaust path between the one or more isolators and the chamber body. The exhaust path may extend to the base of the chamber body. The systems may include a fluid source fluidly coupled with the chamber body at the access extending about the substrate support. | 2022-04-28 |
20220130651 | PROCESSING SYSTEM AND PROCESSING METHOD - There is provided a system for processing a substrate under a depressurized environment. The system comprises: a processing chamber configured to perform desired processing on a substrate; a transfer chamber having a transfer mechanism configured to import or export the substrate into or from the processing chamber; and a controller configured to control a processing process in the processing chamber. The transfer mechanism comprises: a fork configured to hold the substrate on an upper surface; and a sensor provided in the fork and configured to measure an internal state of the processing chamber. The controller is configured to control the processing process in the processing chamber on the basis of the internal state of the processing chamber measured by the sensor. | 2022-04-28 |
20220130652 | ANALYSIS METHOD, ANALYSIS DEVICE, AND PROGRAM - Disclosed is an analysis method for ionizing a sample arranged in an ionizing unit of an analysis device in a state where the sample is in contact with a solvent to perform analyzation. The method includes a first mass analysis step of obtaining first measurement data by causing the solvent not in contact with the sample to adhere to a probe, and then performing mass analysis to the solvent adhering to the probe, a second mass analysis step, performed subsequently to the first mass analysis step, of obtaining second measurement data by causing the sample in the solvent to adhere to the probe or causing the sample adhering to the probe to be brought into contact with the solvent, and then performing mass analysis to the solvent and the sample adhering to the probe, and a measurement data generation step of generating measurement data, associated with the sample, based on the first measurement data and the second measurement data. | 2022-04-28 |
20220130653 | Apparatus and Method for Processing Mass Spectrum - An extraction section extracts a basic pattern of chemical noise included in a mass spectrum. A generation section generates pseudo chemical noise as a connected body of a plurality of pseudo fragments generated by intensity correction of the basic pattern. A removal section removes the pseudo chemical noise from the mass spectrum. | 2022-04-28 |
20220130654 | SURFACE-INDUCED DISSOCIATION DEVICES AND METHODS - Devices and methods for surface-induced association are disclosed herein. According to one embodiment, a device for surface-induced dissociation (SID) includes a collision surface and a deflector configured to guide precursor ions from a pre-SID region to the collision surface. In some embodiments, an extractor extracts ions off the collision surface after collision with the collision surface. In some embodiments, an RF device can collect and/or transmit the extracted ions. In some embodiments, an ion funnel guides product ions resulting from collision with the collision surface to a post-SID region. Some aspects of the disclosure are directed to methods for surface-induced dissociation, which may in some embodiments include using of a split lens or an ion funnel. | 2022-04-28 |
20220130655 | TRANSFORMER FOR APPLYING AN AC VOLTAGE TO ELECTRODES - An ion-optical device comprising: a plurality of electrodes ( | 2022-04-28 |
20220130656 | MASS SPECTROMETER - A first spray unit ( | 2022-04-28 |
20220130657 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE HAVING ETCH RESISTIVE NITRIDE LAYER - The present application discloses a method for fabricating the semiconductor device including providing a substrate in a reaction chamber, forming an untreated silicon nitride film on the substrate, and forming a treated silicon nitride film on the untreated silicon nitride film. Forming the untreated silicon nitride film includes the steps of: (a) supplying a first silicon precursor into the reaction chamber, thereby allowing chemical species from the first silicon precursor to be adsorbed on the substrate, and (b) supplying a first nitrogen precursor into the reaction chamber, thereby nitriding the chemical species to deposit resultant silicon nitride. The step (a) and the step (b) are sequentially and repeatedly performed to form the untreated silicon nitride film. Forming the treated silicon nitride film includes the steps of: (c) supplying a second silicon precursor into the reaction chamber, thereby allowing chemical species from the second silicon precursor to be adsorbed on the untreated silicon nitride film, (d) performing a first hydrogen radical purging by supplying hydrogen radicals into the reaction chamber to reduce impurities in the chemical species from the second silicon precursor, and (e) supplying a second nitrogen precursor into the reaction chamber, thereby nitriding the chemical species from the second silicon precursor to deposit resultant silicon nitride. The step (c), the step (d), and the step (e) are sequentially and repeatedly performed to form the treated silicon nitride film. The untreated silicon nitride film and the treated silicon nitride film together form a silicon nitride layer. | 2022-04-28 |
20220130658 | CONFORMAL SILICON OXIDE FILM DEPOSITION - Methods for depositing a silicon-containing film on a substrate are described. The method comprises heating a processing chamber to a temperature greater than or equal to 200° C.; maintaining the processing chamber at a pressure of less than or equal to 300 Torr; coflowing a silicon precursor and nitrous oxide (N | 2022-04-28 |
20220130659 | Area-Selective Atomic Layer Deposition Of Passivation Layers - Methods of enhancing selective deposition are described. In some embodiments, a passivation layer is deposited on a metal surface before deposition of a dielectric material. A block I molecule is deposited on a metal surface, and a block II molecule is reacted with the block I molecule to form a passivation layer. | 2022-04-28 |
20220130660 | Selective Deposition Of A Passivation Film - Selective deposition methods are described. An exemplary method comprises exposing the substrate comprising a first surface and a second surface to an anchor reactant and selectively depositing the anchor reactant on the first surface as a seed layer, wherein the anchor reactant comprises an ethynyl derivative with a headgroup that selectively targets the first surface. | 2022-04-28 |
20220130661 | TENSILE NITRIDE DEPOSITION SYSTEMS AND METHODS - Exemplary semiconductor processing methods may include flowing deposition gases that may include a nitrogen-containing precursor, a silicon-containing precursor, and a carrier gas, into a substrate processing region of a substrate processing chamber. The flow rate ratio of the nitrogen-containing precursor to the silicon-containing precursor may be greater than or about 1:1. The methods may further include generating a deposition plasma from the deposition gases to form a silicon-and-nitrogen containing layer on a substrate in the substrate processing chamber. The silicon-and-nitrogen-containing layer may be treated with a treatment plasma, where the treatment plasma is formed from the carrier gas without the silicon-containing precursor. The flow rate of the carrier gas in the treatment plasma may be greater than a flow rate of the carrier gas in the deposition plasma. | 2022-04-28 |
20220130662 | SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM STORING PROGRAM FOR CAUSING COMPUTER TO EXECUTE METHOD FOR CONTROLLING SUBSTRATE PROCESSING DEVICE - There is provided a substrate processing device. This substrate processing device includes a substrate holder that holds and rotates a substrate, a first processing head that processes a first plane of the substrate held on the substrate holder, and a second processing head that processes a peripheral portion of the substrate held on the substrate holder. | 2022-04-28 |
20220130663 | Selective Molecular Layer Deposition Of Organic And Hybrid Organic-Inorganic Layers - Embodiments of the disclosure relate to methods of selectively depositing organic and hybrid organic/inorganic layers. More particularly, embodiments of the disclosure are directed to methods of modifying hydroxyl terminated surfaces for selective deposition of molecular layer organic and hybrid organic/inorganic films. Additional embodiments of the disclosure relate to cyclic compounds for use in molecular layer deposition processes. | 2022-04-28 |
20220130664 | Selective Deposition Of A Passivation Film On A Metal Surface - Methods of selectively depositing films on substrates are described. A passivation film is deposited on a metal surface before deposition of a dielectric material. Also described is exposing a substrate surface comprising a metal surface and a dielectric surface to a docking precursor to form a passivation film. | 2022-04-28 |
20220130665 | HARDMASK TUNING BY ELECTRODE ADJUSTMENT - Exemplary processing methods may include forming a plasma of a deposition precursor in a processing region of a semiconductor processing chamber. The methods may include adjusting a variable capacitor within 20% of a resonance peak. The variable capacitor may be coupled with an electrode incorporated within a substrate support on which a substrate is seated. The methods may include depositing a material on the substrate. | 2022-04-28 |
20220130666 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND HOT PLATE - A semiconductor device manufacturing method includes forming a ring-shaped rib at an outer circumferential edge of a semiconductor wafer by grinding a center of a back surface of the semiconductor wafer, so that the rib has a thickness greater than a thickness of the center of the semiconductor wafer, pasting a first protective film on the back surface of the semiconductor wafer, pasting a second protective film so as to cover an outer circumferential edge of the first protective film and an outer circumference of the rib, positioning the back surface of the semiconductor wafer so as to face a heating surface of a hot plate and directly heating the first protective film and the second protective film by using the hot plate, and performing a plating treatment on a surface of the semiconductor wafer. | 2022-04-28 |
20220130667 | STACKED STRUCTURE INCLUDING SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer. | 2022-04-28 |
20220130668 | METHOD AND DEVICE FOR DEPOSITING SILICON ONTO SUBSTRATES - A method for forming a layer on a substrate includes providing a substrate in a reactor of a semiconductor processing system, the reactor having a divider separating an upper chamber from a lower chamber and a substrate holder therein, the substrate having upper and lower surfaces. The wafer is positioned within the reactor using the substrate holder such that the upper surface bounds the upper chamber, a silicon-containing gas is flowed through the upper chamber to deposit a layer of the upper surface, and a halogen-containing gas is flowed through the lower chamber to etch a deposited film on at least one wall bounding the lower chamber while flowing the silicon-containing gas through the upper chamber. Semiconductor processing systems are also described. | 2022-04-28 |
20220130669 | FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUID SOLID EPITAXY - A semiconductor device is provided. The semiconductor device includes a template layer disposed over a substrate and having a trench therein, a buffer structure disposed over a bottom surface of the trench and comprising a metal oxide, a single crystal semiconductor structure disposed within the trench and over the buffer structure and a gate structure disposed over a channel region of the single crystal semiconductor structure. | 2022-04-28 |
20220130670 | STRAIN RELIEF TRENCHES FOR EPITAXIAL GROWTH - Strain relief trenches may be formed in a substrate prior to growth of an epitaxial layer on the substrate. The trenches may reduce the stresses and strains on the epitaxial layer that occur during the epitaxial growth process due to differences in material properties (e.g., lattice mismatches, differences in thermal expansion coefficients, and/or the like) between the epitaxial layer material and the substrate material. The stress and strain relief provided by the trenches may reduce or eliminate cracks and/or other types of defects in the epitaxial layer and the substrate, may reduce and/or eliminate bowing and warping of the substrate, may reduce breakage of the substrate, and/or the like. This may increase the center-to-edge quality of the epitaxial layer, may permit epitaxial layers to be grown on larger substrates, and/or the like. | 2022-04-28 |