16th week of 2015 patent applcation highlights part 13 |
Patent application number | Title | Published |
20150102295 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - An organic light emitting display device and manufacturing method thereof are disclosed. One inventive aspect includes a first substrate, a second substrate, a pixel unit, a circuit unit, a sealing member and a radiation unit. The pixel unit is formed on the first substrate and comprises an organic light emitting device and a thin-film transistor (TFT). The radiation unit includes radiation fins formed in the sealing member and a radiation layer contacting first ends of the radiation fins. | 2015-04-16 |
20150102296 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF - A organic light emitting diode display including an organic light emitting display panel displaying an image, and a lower passivation film attached to a bottom of the organic light emitting panel and including a polymer resin and an antistatic agent, wherein the lower passivation film includes a plurality of stress adjustment patterns disposed to be adjacent to each other wherein decreasing the bending interval between the bending stress adjustment patterns formed at the lower passivation film processed with the antistatic agent and attached at the position corresponding to the bending portion of the organic light emitting panel, thereby selectively minimizes the stress of the bending portion of the organic light emitting panel, therefore, asymmetry of strains of the bending portions of the organic light emitting display panel can be prevented to remove a picture abnormality, and static electricity may be prevented. | 2015-04-16 |
20150102297 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode display having a pixel array structure capable of maximizing space use, and a method for manufacturing the same. The organic light emitting diode display includes pixels of a first color, pixels of a second color, and pixels of a third color, each having a longitudinal direction that extends along one of two diagonals of the display and not along a row or a column direction. Furthermore, each of the pixels are arranged in pairs, each pixel of each pair being of a same color and being arranged near each other, extending in a same direction, and being symmetrical about a vertex of a unit area. Each pair of pixels is produced by deposition of an emission material into a single opening in a fine metal mask, leading to improved aperture ratio and improved use of space. | 2015-04-16 |
20150102298 | FLEXIBLE DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - A flexible display panel and a manufacturing method which is capable of removing a non-display area without damaging a display element layer, the flexible display panel includes a flexible substrate which includes a display area and a peripheral area outside of the display area, a display element layer disposed on the flexible substrate, and a neutral plane balancing layer disposed on the display element layer in the peripheral area, wherein the peripheral area of the flexible substrate in which the neutral plane balancing layer is disposed is folded towards a rear side of the display area along a first bending line, and the neutral plane balancing layer overlaps the first bending line. | 2015-04-16 |
20150102299 | ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY - An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a display substrate including a display area displaying an image and a peripheral area surrounding the display area. The OLED display also includes an encapsulation substrate facing the display substrate and a sealant bonding the display substrate to the encapsulation substrate. The display substrate includes a substrate, a scan driver formed over the substrate in the peripheral area and including a common voltage line applying a common voltage to the display area. The display substrate also includes a pixel defining layer formed above the common voltage line. The sealant is formed over the scan driver and contacts an upper surface of the pixel defining layer. | 2015-04-16 |
20150102300 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus and a method of manufacturing the organic light-emitting display apparatus is provided. The organic light-emitting display apparatus may include a first substrate including a display portion, a second substrate disposed opposite the first substrate, a sealing line that encloses the display portion and binds the first substrate to the second substrate; and a plurality of sealing branches binding the first substrate to the second substrate in which one end of each of the plurality of sealing branches contacts the sealing line and another end of each of the plurality of sealing branches does not contact the sealing line. | 2015-04-16 |
20150102301 | ORGANIC OPTOELECTRIC DEVICE AND DISPLAY DEVICE - Disclosed is an organic optoelectric device, including an anode and a cathode facing each other, an emission layer interposed between the anode and the cathode, a hole transport layer interposed between the anode and the emission layer, and a hole transport auxiliary layer interposed between the hole transport layer and the emission layer. The emission layer includes at least one first compound represented by Chemical Formula 1: | 2015-04-16 |
20150102302 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND REPAIRING METHOD THEREOF - An organic light emitting diode display includes a substrate having a display unit and a peripheral portion, scan lines in a first direction, data lines in a second direction, pixels in the display unit and having pixel circuit portions and organic light emitting diodes, first dummy lines in the display unit and extending in the first direction, at least one second dummy line in the peripheral portion and extending in the second direction, dummy circuit portions connected to a first dummy line and the at least one second dummy line, driving pads connected to end portions of the data lines, at least one dummy driving pad connected to an end portion of the at least one second dummy line, and a driving circuit configured to transmit a data signal to the driving pads and to the at least one dummy driving pad. | 2015-04-16 |
20150102303 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THE SAME - A substrate includes a driving transistor, a capacitor, a driving voltage line, and a connection line. The driving transistor has a gate electrode overlapping a channel region of a curved active layer. The capacitor has a first electrode is formed of the gate electrode of the driving transistor and a second electrode overlapping the first electrode. The driving voltage line includes driving voltage line portions on the capacitor and connected to edges of the second electrode of the capacitor. The first connection line is located at a portion of a region on the capacitor separated from the driving voltage line. A via hole is on the first connection line. | 2015-04-16 |
20150102304 | ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY PANEL SUBSTRATE AND METHOD OF CUTTING OLED DISPLAY PANELS FROM THE SUBSTRATE - A method of cutting an organic light-emitting display panel substrate into OLED display panels is disclosed. In one aspect, the method includes forming a plurality of OLEDs over a lower mother substrate, wherein the OLEDs are divided into a plurality of groups. The method also includes forming a plurality of sealant lines over at least one of an upper mother substrate or the lower mother substrate such that each sealant line surrounds a corresponding group of the OLEDs. The method further includes forming a plurality of assistance sealant lines between adjacent sealant lines, attaching the upper mother substrate to the lower mother substrate with the sealant lines and the assistance sealant lines interposed therebetween, and cutting the upper mother substrate and the lower mother substrate along the assistance sealant lines. | 2015-04-16 |
20150102305 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including a first sub-pixel, a second sub-pixel, and a third sub-pixel on a substrate; a plurality of first electrodes in the first sub-pixel, the second sub-pixel, and the third sub-pixel, respectively; a second electrode being a sub-common layer to the first sub-pixel and the second sub-pixel and facing the first electrodes of the first sub-pixel and the second sub-pixel; and a third electrode in the third sub-pixel and facing the first electrode of the third sub-pixel is disclosed. | 2015-04-16 |
20150102306 | ELECTROLUMINESCENT (EL) DEVICE AND DISPLAY DEVICE - An electroluminescent (EL) device and a display device are disclosed. The OLED device comprises a base substrate; a plurality of pixel units arranged in an array are disposed on the base substrate; each pixel unit comprises sub-pixel units provided with EL structures; the EL structures each comprise a transparent anode, an emission layer (EML) and a transparent cathode disposed on the base substrate in sequence; the EL structure of each sub-pixel unit is divided into a transmissive area and a reflective area; and the reflective area of the EL structure is provided with a reflective layer. The EL device can achieve transparent display with the transmissive area of each sub-pixel unit, and meanwhile, the transmissive area for achieving transparent display can also realize normal display. | 2015-04-16 |
20150102307 | ELECTROLUMINESCENT ELEMENT, METHOD FOR MANUFACTURING ELECTROLUMINESCENT ELEMENT, DISPLAY DEVICE, AND ILLUMINATION DEVICE - An electroluminescent element including a substrate and a layered part having a first electroconductive layer, a dielectric layer, a second electroconductive layer, a light-emitting layer and a third electroconductive layer. Plural contact holes that pass through at least the dielectric layer are disposed in the dielectric layer, the first and second electroconductive layers are electrically connected inside the contact holes, the refractive indices of the second electroconductive layer and light-emitting layer are 1.5 to 2.0 inclusive, the absolute value of the difference between the refractive indices, respectively, and the refractive index of the dielectric layer is 0.1 or more. Further, (i) the light-emitting surface side has at continuous light-emitting region, and (ii) the number of contact holes is 10 | 2015-04-16 |
20150102308 | ORGANIC SEMICONDUCTOR LAYER, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE - Provided is an organic semiconductor layer including a mixture of a first polycyclic aromatic hydrocarbon to which a substituent R | 2015-04-16 |
20150102309 | LIGHT EMITTING PANEL AND MANUFACTURING METHOD OF LIGHT EMITTING PANEL - In the present invention, a light emitting panel has a transmissive light emitting region comprising a light emission section for emitting light and a light transmitting section for transmitting light. The light emission section of the transmissive light emitting region has a light emitting part that emits light and a conductive reflective layer that blocks and reflects light. The light emitting part of the transmissive light emitting region has the following: a first electrode layer that is electrically connected to one surface of the reflective layer and that is conductive and light transmissive; a second electrode layer that is disposed facing the first electrode layer and that is conductive and light transmissive; and an organic EL layer interposed between the second electrode layer and the first electrode layer. The light transmitting section of the transmissive light emitting region has a first electrode layer that is not in the position of the reflective layer, a second electrode layer, and an organic EL layer. In the space between the first electrode layer and organic EL layer of the light transmitting section of the transmissive light emitting region, an insulative and light transmissive resin layer is filled thereinto. | 2015-04-16 |
20150102310 | ORGANIC OPTOELECTRONIC COMPONENT AND USE OF A TRANSPARENT INORGANIC SEMICONDUCTOR IN A CHARGE CARRIER PAIR GENERATING LAYER SEQUENCE - Various embodiments may relate to an organic optoelectronic component with a layer structure for generating and separating charge carriers of a first charge carrier type and charge carriers of a second charge carrier type, the layer structure including a hole-conducting transparent inorganic semiconductor. | 2015-04-16 |
20150102311 | OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT - An optoelectronic component may include a first organic functional layer structure, a second organic functional layer structure, and a charge generating layer structure between the first organic functional layer structure and the second organic functional layer structure. The charge generating layer structure includes a first electron-conducting charge generating layer, and a second electron-conducting charge generating layer. The second electron-conducting charge generating layer is formed from a single substance, and the substance of the first electron-conducting charge generating layer is a substance selected from the group of substances consisting of: HAT-CN, Cu(I)pFBz, NDP-2, NDP-9, Bi(III)pFBz, F16CuPc. | 2015-04-16 |
20150102312 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - A display apparatus includes an array of pixels and dummy pixels. A plurality of first lines are connected to the pixels and the dummy pixels. A plurality of repair lines are connected to the dummy pixels and are selectively connected to the pixels. A plurality of second lines are connected to the pixels. At least one dummy line is connected to the dummy pixels. At least one dummy wiring is connected to the at least one dummy line and is selectively connected to one of the second lines. | 2015-04-16 |
20150102313 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - In an aspect, an organic light-emitting display apparatus including: a substrate; a thin film transistor (TFT) formed on the substrate and comprising an active layer, a gate electrode, a source electrode, and a drain electrode; a first insulating layer formed on the TFT; a pixel electrode; a second insulating layer formed on the first insulating layer; and an opposite electrode formed on the intermediate layer is provided. | 2015-04-16 |
20150102314 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode display is provided including: a substrate including a display area and a non-display area positioned at a circumference of the display area; a thin film transistor formed on the substrate; a first electrode formed on the thin film transistor and electrically connected to the thin film transistor; a pixel definition layer formed on the first electrode and defining a pixel area; and an emission layer formed on the first electrode and contacting the first electrode in the pixel area, wherein the display area is divided into a first region, and a second region including a remainder of the display area except for the first region, and a cross-sectional area ratio of the pixel definition layer that a cross-section of the pixel definition layer occupies for a unit pixel is different in the first region and the second region. | 2015-04-16 |
20150102315 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode display may include a display substrate including an organic light emitting diode, a sealing member facing the display substrate to cover the organic light emitting diode, a sealant positioned between the display substrate and the sealing member and bonding the display substrate and the sealing member, and a reinforcing member positioned at an outer surface of the sealant and a space between the display substrate and the sealing member, in which shear stress and hardness of the reinforcing member are a function of a sum of thicknesses of the display substrate and the sealing member. | 2015-04-16 |
20150102316 | ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY - An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a thin film transistor including an active layer, a gate electrode, a source electrode, and a drain electrode, a first insulating layer arranged between the active layer and the gate electrode, and a second insulating layer arranged between the gate, source, and drain electrodes. The OLED display also includes a third insulating layer covering the source and drain electrodes, wherein an opening is defined in each of the second and third insulating layers and wherein the openings substantially overlap. The OLED display further includes a pixel electrode formed in the openings defined in the second and third insulating layers and including a semi-permeable metal layer. | 2015-04-16 |
20150102317 | THIN FILM TRANSISTOR SUBSTRATES, DISPLAY DEVICES AND METHODS OF MANUFACTURING DISPLAY DEVICES - A thin film transistor substrate may include a gate electrode on a base substrate, a gate insulation layer covering the gate electrode on the base substrate, an active pattern on the gate insulation layer, an etch-stop layer pattern partially exposing the active pattern, a source electrode and a drain electrode in contact with a portion of the exposed active pattern, and an inorganic barrier layer on the source electrode, the drain electrode, and the etch-stop layer pattern. The active pattern may be superimposed over the gate electrode. The source electrode and the drain electrode may be superimposed over both ends of the gate electrode. The inorganic barrier layer may be in contact with a remaining portion of the exposed active pattern. | 2015-04-16 |
20150102318 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display device includes a substrate, a display element on the substrate, and an encapsulation member on the substrate. The encapsulation member encapsulates the display element. The encapsulation member includes a plurality of organic layers and a plurality of inorganic layers. Each inorganic layer includes a plurality of inorganic blocks that are separate from each other. The inorganic layers are between the organic layers. | 2015-04-16 |
20150102319 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode display is provided that may include a first substrate, a plurality of electrodes on the first substrate and spaced apart from each other, a pixel defining layer on the plurality of electrodes, spacers on the pixel defining layer, and a second substrate on the spacers. The pixel defining layer includes a plurality of openings spaced apart from each other and respectively open to the plurality of electrodes. The spacers on the pixel defining layer are at crossing points of a plurality of virtual lines, the spacers crossing spaces between adjacent openings of the plurality of openings. | 2015-04-16 |
20150102320 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode display includes a red pixel including a red organic emission layer, a blue pixel including a blue organic emission layer, a green pixel including a green organic emission layer, a main spacer adjacent to the blue pixel, and a sub spacer shorter than the main spacer. | 2015-04-16 |
20150102321 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - Compounds according to Formula 1, devices containing the same and formulations containing the same are described. Formula 1 has the following structure: | 2015-04-16 |
20150102322 | DISPLAY DEVICE - A display device in which pixels each including an emission area are arranged in a form of a matrix, the display device including: a first electrode formed from the emission area of the pixels to a non-emission area on a periphery of the emission area; a second electrode formed so as to be common to the pixels; and a light emitting material layer formed between the first electrode and the second electrode; wherein film thickness in the non-emission area of at least one of the first electrode and the second electrode is larger than film thickness in the emission area. | 2015-04-16 |
20150102323 | LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS - A light-emitting device includes: a light-emitting element which is disposed in a display region of a base body and includes a first electrode, a second electrode, and a light-emitting functional layer; a first conductor; a first insulating layer which covers the first conductor; a second conductor; and a second insulating layer which covers the second conductor. The second electrode is formed on a surface of the first insulating layer and is electrically connected to the first conductor via a first conduction hole of the first insulating layer, the first conductor is formed on a surface of the second insulating layer and is electrically connected to the second conductor via a second conduction hole of the second insulating layer, and the first conduction hole and the second conduction hole are configured not to overlap each other in a plan view. | 2015-04-16 |
20150102324 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode (OLED) display includes a flexible substrate, a barrier layer disposed on the flexible substrate, and an organic light emitting diode disposed on the barrier layer. The barrier layer includes a plurality of metal layers and a plurality of insulation layers in which the metal layers and the insulation layers are alternatively stacked with each other on the flexible substrate. | 2015-04-16 |
20150102325 | OPTICAL SHEET, DISPLAY DEVICE INCLUDING OPTICAL SHEET, AND RELATED MANUFACTURING METHOD - An optical sheet includes a transparent substrate. The optical sheet further includes light-scattering elements randomly and nonperiodically distributed in the transparent substrate. Each light-scattering element of the light scattering elements includes a binding-material member and light-scattering particles dispersed in the binding-material member. A weight percent calculated from dividing a total weight of light-scattering particles of the light-scattering elements by a total weight of the light-scattering elements is in a range of 5 wt % to 40 wt %. | 2015-04-16 |
20150102326 | FLEXIBLE ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF - A flexible organic light emitting diode (OLED) display according to an exemplary embodiment includes: a substrate; an organic light emitting diode (OLED) layer provided on the substrate; and a thin film encapsulation layer provided on the OLED layer. The thin film encapsulation layer includes a plurality of laminated inorganic layers, at least one inorganic layer of the plurality of inorganic layers includes a plurality of inorganic layer patterns that are disposed to be spaced apart from each other on a plane, and an organic layer is formed between the plurality of inorganic layer patterns. | 2015-04-16 |
20150102327 | OPTICAL FILM FOR REDUCING COLOR SHIFT AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE EMPLOYING THE SAME - An optical film includes a high refractive index pattern layer including a material having a refractive index greater than about 1, wherein a groove pattern defined by grooves, each of which has a curved groove surface and a depth greater than a width, is defined on a first surface of the high refractive index pattern, the grooves are two-dimensionally arranged in a first direction and a second direction, and a cross-sectional shape of each of the grooves has an anisotropic shape, in which a length in a first axial direction and a length in a second axial direction, which is perpendicular to the first axial direction, are different from each other, and a low refractive index pattern layer including a material having a refractive less than the refractive index of the high refractive index pattern layer and further including fillers corresponding to the grooves. | 2015-04-16 |
20150102328 | OPTICAL FILM FOR REDUCING COLOR SHIFT AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE EMPLOYING THE SAME - An optical film includes: a high refractive index pattern layer including a material having a refractive index greater than about 1, where a plurality of grooves, each having a curved groove surface and a depth greater than a width thereof, is defined on a first surface of the high refractive index pattern layer, the plurality of grooves defines a pattern, the plurality of grooves are two-dimensionally arranged in a first direction and a second direction, and a first distance between adjacent grooves in the first direction and a second distance between adjacent grooves in the second direction are different from each other; and a low refractive index pattern layer including a material having a refractive index less than the refractive index of the high refractive index pattern layer and further including a plurality of fillers which fills the plurality of grooves, respectively. | 2015-04-16 |
20150102329 | MASK FOR DEPOSITING THIN FILM, METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY USING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY USING THE SAME - A mask for depositing a thin film according to an exemplary embodiment of the present invention includes: mask strips each including a plurality of pattern portions disposed end to end along one direction; and a frame on which the mask strips are positioned. Intervals between adjacent ends of adjacent pattern portions differ from each other according to distance from a predetermined location, thereby providing an organic light emitting diode display having a more uniform quality. | 2015-04-16 |
20150102330 | COMPOSITION AND DEVICE - A composition comprises a low molecular weight polyelectrolyte, a high molecular weight polymer, a light-emitting material and a salt. The viscosity average molecular weight of the high molecular weight polymer in at least one solvent is at least 5 times greater than the viscosity average molecular weight of the low molecular weight polyelectrolyte in the at least one solvent, and the high molecular weight polymer and the low molecular weight polymer are preferably different molecular weight polymers of the same polyelectrolyte material, such as polyethylene oxide. The composition is used to provide a light emitting layer ( | 2015-04-16 |
20150102331 | Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - A light-emitting element with high reliability that can keep favorable characteristics after long-time driving is provided. In addition, a light-emitting device having a long lifetime including the light-emitting element is provided. Moreover, an electronic device and a lighting device having a long lifetime are provided. In a light-emitting element including an EL layer between a pair of electrodes, a light-emitting layer included in the EL layer has a stacked-layer structure which is different from the conventional structure, whereby the light-emitting element can keep favorable characteristics after long-time driving even in the case where carrier balance is changed over time due to driving of the light-emitting element or a light-emitting region is shifted due to the change. | 2015-04-16 |
20150102332 | ORGANIC LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting device and a method of fabricating the same includes a first substrate; a thin film transistor (TFT) on the first substrate; a planarization layer on the TFT; an organic light emitting diode (OLED) on the planarization layer; a passivation layer on the OLED; a second substrate on the passivation; and a hydrogen capturing material between the first and the second substrates to prevent oxidation of materials forming the TFT. | 2015-04-16 |
20150102333 | ELECTRONIC DEVICE AND ELECTRONIC DEVICE MANUFACTURING METHOD - An electronic device including: a substrate; a bank formed above the substrate; a semiconductor layer formed within an aperture surrounded by the bank; and electrodes electrically connected to the semiconductor layer. An outline of the aperture in plan view includes a first straight edge, a second straight edge continuous with one end of the first edge via a first connector, and a straight third edge continuous with the other end of the first edge via a second connector. The area of a first connector region differs from the area of a second connector region, the first connector region being defined by a first imaginary straight line along the first edge, a second imaginary straight line along the second edge, and the first connector, and the second connector region being defined by a third imaginary straight line along the third edge, the first imaginary straight line, and the second connector. | 2015-04-16 |
20150102334 | POLYMER COMPOUND, CHARGE-TRANSPORTING POLYMER, COMPOSITION FOR ORGANIC ELECTROLUMINESCENT ELEMENT, ORGANIC ELECTROLUMINESCENT ELEMENT, ORGANIC EL DISPLAY DEVICE, AND ORGANIC EL LIGHT - The present invention provides a polymer compound and charge transporting polymer having a high hole injecting and transporting performance, a composition for organic electroluminescent element containing the charge transporting polymer, and an organic electroluminescent element. The polymer compound of the present invention comprises a specific group having a benzocyclobutene ring. | 2015-04-16 |
20150102335 | DOUBLE SELF-ALIGNED METAL OXIDE TFT - A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the substrate, depositing transparent gate dielectric and transparent metal oxide semiconductor layers overlying the gate metal and a surrounding area, depositing transparent passivation material on the semiconductor material, depositing photoresist on the passivation material, exposing and developing the photoresist to remove exposed portions, etching the passivation material to leave a passivation area defining a channel area, depositing transparent conductive material over the passivation area, depositing photoresist over the conductive material, exposing and developing the photoresist to remove unexposed portions, and etching the conductive material to leave source and drain areas on opposed sides of the channel area. | 2015-04-16 |
20150102336 | FIELD RELAXATION THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND DISPLAY APPARATUS INCLUDING THE TRANSISTOR - A thin film transistor includes a semiconductor pattern formed on a substrate, the semiconductor pattern being formed of an oxide semiconductor and including a source area, a drain area, and an intermediate area that is formed between the source area and the drain area and includes a plurality of first areas and a second area having higher conductivity than the first areas; a first insulating pattern formed to cover at least the first areas; a second insulating film formed to face the second area, the source area and the drain area; a gate electrode formed on the semiconductor pattern and insulated from the semiconductor pattern by the first insulating pattern and the second insulating film; and source and drain electrodes insulated from the gate electrode and being in contact with the source area and the drain area. | 2015-04-16 |
20150102337 | TFT ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY PANEL - A TFT array substrate is disclosed. The TFT array substrate includes a TFT area, which includes a TFT first electrode layer, a TFT second electrode layer, a TFT insulation layer, and a TFT etching stop layer. The TFT array substrate also includes also includes a storage capacitor, which includes a capacitor first electrode layer, a capacitor second electrode layer, a capacitor insulation layer, and a capacitor etching stop layer. The TFT first electrode layer and the capacitor first electrode layer are formed in a shared first electrode layer, the TFT second electrode layer and the capacitor second electrode layer are formed in a shared second electrode layer, the TFT insulation layer and the capacitor insulation layer are formed in a shared insulation layer, and the TFT etching stop layer and the capacitor etching stop layer are formed in a shared etching stop layer. | 2015-04-16 |
20150102338 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE - Embodiments of the invention provide a thin film transistor and a manufacturing method thereof and a display device. The thin film transistor includes a gate electrode, a gate insulation layer, an active layer, an ohmic contact layer, a source electrode and a drain electrode, and the source electrode and the drain electrode are connected to the active layer by the ohmic contact layer. The ohmic contact layer is provided at a lateral side of the active layer and contacts the lateral side of the active layer. | 2015-04-16 |
20150102339 | OXIDE THIN-FILM TRANSISTOR ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY PANEL - An oxide thin-film transistor (TFT) array substrate, a manufacturing method thereof and a display panel are provided. In the manufacturing method, a pattern of a gate insulating layer ( | 2015-04-16 |
20150102340 | METHOD OF FORMING A CONDUCTIVE FILM - A method of forming a conductive film, comprising the steps of:
| 2015-04-16 |
20150102341 | SEMICONDUCTOR DEVICE - To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment. | 2015-04-16 |
20150102342 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The structure includes a first blocking film over an insulating surface; a base insulating film over the insulating surface and the first blocking film; a first oxide semiconductor film over the base insulating film; a second oxide semiconductor film over the first oxide semiconductor film; source and drain electrodes in contact with side surfaces of the first and second oxide semiconductor films; a first insulating film over the source electrode; a second insulating film over the drain electrode; a third insulating film over the second oxide semiconductor film and the first and second insulating films; a third oxide semiconductor film over the third insulating film; a gate insulating film over the third oxide semiconductor film; and a gate electrode on and in contact with the gate insulating film and covering a top surface and side surfaces of the second oxide semiconductor film with the gate insulating film provided therebetween. | 2015-04-16 |
20150102343 | DISPLAY SUBSTRATES, METHODS OF MANUFACTURING THE SAME AND DISPLAY DEVICES INCLUDING THE SAME - Display substrates and display devices with reduced electrical resistance are disclosed. One inventive aspect includes a switching device, a first wiring and a second wiring. The switching device includes a first semiconductor layer, first and second gate insulation layers, a source electrode and a drain electrode. The source and drain electrodes are formed to electrically connect, through the first and second gate insulation layers, to the first semiconductor layer. The second wiring is formed on the second gate insulation layer and electrically connected to the first wiring. | 2015-04-16 |
20150102344 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array substrate and a method of manufacturing the thin film transistor array substrate are provided. The thin film transistor array substrate may include: a substrate; a thin film transistor (TFT) including an active layer, a gate electrode, a source electrode, and a drain electrode on the substrate. The gate electrode may include a bottom gate electrode and a top gate electrode that covers upper and lateral surfaces of the bottom gate electrode. | 2015-04-16 |
20150102345 | ACTIVE DEVICE AND MANUFACTURING METHOD THEREOF - An active device includes a gate, a gate insulation layer, a channel layer, a first passivation layer, a second passivation layer, a source and a drain. The gate insulation layer is disposed on the substrate and covers the gate. The channel layer is disposed on the gate insulation layer and has a semiconductor section disposed corresponding to the gate and a conductive section located around the semiconductor section. The first passivation layer is disposed on the channel layer and covers the semiconductor section. The second passivation layer is disposed on and covers the first passivation layer. The source and the drain are disposed on the gate insulation layer, and extended along peripheries of the conductive section, the first and the second passivation layers to be disposed on the second passivation layer. A portion of the second passivation layer is exposed between the source and the drain. | 2015-04-16 |
20150102346 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device is provided as follows. A peripheral circuit structure is disposed on a first substrate. A cell array structure is disposed on the peripheral circuit structure. A second substrate is interposed between the peripheral circuit structure and the cell array structure. The cell array structure includes a stacked structure, a through hole and a vertical semiconductor pattern. The stacked structure includes gate electrodes stacked on the second substrate. The through hole penetrates the stacked structure and the second substrate to expose the peripheral circuit structure. The vertical semiconductor pattern is disposed on the peripheral circuit structure, filling the through hole. | 2015-04-16 |
20150102347 | OXIDE SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE - A semiconductor element having high mobility, which includes an oxide semiconductor layer having crystallinity, is provided. The oxide semiconductor layer includes a stacked-layer structure of a first oxide semiconductor film and a second oxide semiconductor film having a wider band gap than the first oxide semiconductor film, which is in contact with the first oxide semiconductor film. Thus, a channel region is formed in part of the first oxide semiconductor film (that is, in an oxide semiconductor film having a smaller band gap) which is in the vicinity of an interface with the second oxide semiconductor film. Further, dangling bonds in the first oxide semiconductor film and the second oxide semiconductor film are bonded to each other at the interface therebetween. Accordingly, a decrease in mobility resulting from an electron trap or the like due to dangling bonds can be reduced in the channel region. | 2015-04-16 |
20150102348 | INTEGRATED FINFET-BJT REPLACEMENT METAL GATE - A method of forming a semiconductor structure that includes forming a first recess and a second recess between a first pair of sidewall spacers and a second pair of sidewall spacers respectively, the first and second pair of sidewall spacers surrounding a fin on top of a buried dielectric layer, the fin is formed from a top most semiconductor layer of a semiconductor-on-insulator substrate. A high-k dielectric layer is deposited within the first and second recesses and a dummy titanium nitride layer is deposited on the high-k dielectric layer. The high-k dielectric layer and the dummy titanium nitride layer are removed from the second recess and a silicon cap layer is deposited within the first and second recesses. Next, dopants are implanted into the silicon cap layer in the second recess without implanting dopants into the silicon cap layer in the first recess to form a BJT device. | 2015-04-16 |
20150102349 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor array substrate including a first TFT including a first active layer, a gate electrode, a first source electrode and a first drain electrode, a second TFT including a second active layer, a floating gate electrode, a control gate electrode, a second source electrode, and a second drain electrode, a capacitor including a first electrode and a second electrode, and a capping layer contacting a portion of the first electrode, the capping layer and the second electrode being on a same layer, is disclosed. A method of manufacturing thin film transistor array substrate is also disclosed. | 2015-04-16 |
20150102350 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel includes a plurality of pixels on a substrate. Each pixel of the plurality of pixels includes a driving and a switching thin film transistor. The driving thin film transistor includes a first semiconductor including first source and drain regions, a first gate electrode overlapping the first semiconductor, a gate insulating layer between the first semiconductor and the first gate electrode, an oxide layer between the first semiconductor and the gate insulating layer, and first source and drain electrodes. The switching thin film transistor includes a second semiconductor including second source and drain regions, a second gate electrode overlapping the second semiconductor, and second source and drain electrodes. The switching thin film transistor includes the gate insulating layer between the second semiconductor and the second gate electrode. The gate insulating layer contacts an upper portion of the second semiconductor. | 2015-04-16 |
20150102351 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC DEVICE - A load, a transistor which controls a current value supplied to the load, a capacitor, a power supply line, and first to third switches are provided. After a threshold voltage of the transistor is held by the capacitor, a potential in accordance with a video signal is inputted and a voltage that is the sum of the threshold voltage and the potential is held. Accordingly, variation in current value caused by variation in threshold voltage of the transistor can be suppressed. Therefore, a desired current can be supplied to a load such as a light emitting element. In addition, a display device with a high duty ratio can be provided by changing a potential of the power supply line. | 2015-04-16 |
20150102352 | CAPACITOR STRUCTURE OF GATE DRIVER IN PANEL - A capacitor structure of gate driver in panel (GIP) includes a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, a first and second transparent capacitor electrode layers. The first dielectric layer covers the first metal layer. The second metal layer is disposed on the first dielectric layer and coupled to the first metal layer. The second dielectric layer covers the second metal layer. The first transparent capacitor electrode layer is disposed on the first dielectric layer and connected to the second metal layer. The second transparent capacitor electrode layer is disposed on the second dielectric layer and coupled to the first metal layer, in which the second and first transparent capacitor electrode layers are arranged to be stacked in a thickness direction and mutually opposed across the second dielectric layer therebetween. | 2015-04-16 |
20150102353 | TFT ARRAY SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE - A TFT array substrate is disclosed. The TFT array substrate includes a substrate, a data line disposed above the substrate, and a gate insulating layer disposed above the substrate, where the gate insulating layer includes a groove. The TFT array substrate also includes a data line disposed within the groove of the gate insulating layer. | 2015-04-16 |
20150102354 | ANTISTATIC STRUCTURE OF ARRAY SUBSTRATE - The present invention provides an antistatic structure of an array substrate, which includes: an effective zone ( | 2015-04-16 |
20150102355 | DISPLAY SUBSTRATES AND METHODS OF MANUFACTURING DISPLAY SUBSTRATES - A display substrate and a method of manufacturing a display substrate are disclosed. The display substrate includes an active pattern, a first gate electrode and a second gate electrode. The active pattern is disposed on a base substrate. The first gate electrode overlaps the active pattern. The first gate electrode is spaced apart from the active pattern by a first distance. The second gate electrode overlaps the active pattern. The second gate electrode is spaced apart from the active pattern by a second distance which is larger than the first distance. | 2015-04-16 |
20150102356 | LIQUID CRYSTAL DEVICE AND MANUFACTURING METHOD FOR SAME - Display device, including: substrates, color filters having first and second color filters, drain and gate signal lines (of light blocking material), wherein, an overlapping portion adjacent the first and second color filter overlap, is formed on a region with one of the drain or gate signal lines, a first color filter edge is a first taper and a second color filter edge is a second taper, in the overlapping portion, the first taper is closer to the drain or gate signal line than the second taper in the overlapping portion, the first taper angle is 45° or more and 90° or less corresponding to a surface of the drain or gate signal line, the second taper angle is 45° or more and 90° or less corresponding to a surface of the first taper and, the first taper angle is larger than the second taper angle. | 2015-04-16 |
20150102357 | GaN-containing semiconductor structure - A method for forming a GaN-containing semiconductor structure is provided. The method comprises a substrate is provided, a nucleation layer is formed above the substrate, a diffusion blocking layer is formed above the nucleation layer, a strain relief layer is formed above the diffusion blocking layer, and a semiconductor layer is formed above the strain relief layer, in which the diffusion blocking layer is deposited on the nucleation layer such that the diffusion blocking layer can prevent the impurities out-diffusion from the substrate. | 2015-04-16 |
20150102358 | NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE, SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE - A nitride semiconductor multilayer structure includes a sapphire substrate having an m-plane principal surface with an off-angle φ, and a mask layer including first and second side surface portions that sandwich each exposed region. In a cross section parallel to the m- and c-axes, points at which the first and second side surface portions meet the principal surface are respectively points A and B, a point at which the first side surface portion intersects a line passing through point B and forming an angle of 58°−φ with the principal surface is C, a distance between a line passing through point C and perpendicular to the principal surface and a line passing through point B and perpendicular to the principal surface is W, and a height of the first side surface portion is H. Then H≧W·tan(58°−φ)). | 2015-04-16 |
20150102359 | INTEGRATING ACTIVE MATRIX INORGANIC LIGHT EMITTING DIODES FOR DISPLAY DEVICES - A method of forming an active matrix, light emitting diode (LED) array includes removing, from a base substrate, a layer of inorganic LED material originally grown thereupon; and bonding the removed layer of inorganic LED material to an active matrix, thin film transistor (TFT) backplane array. | 2015-04-16 |
20150102360 | BONDABLE TOP METAL CONTACTS FOR GALLIUM NITRIDE POWER DEVICES - An embodiment of a semiconductor device includes a gallium nitride (GaN) substrate having a first surface and a second surface. The second surface is substantially opposite the first surface, at least one device layer is coupled to the first surface, and a backside metal is coupled to the second surface. A top metal stack is coupled to the at least one device layer. The top metal stack includes a contact metal coupled to a surface of the at least one device layer, a protection layer coupled to the contact metal, a diffusion barrier coupled to the protection layer, and a pad metal coupled to the diffusion barrier. The semiconductor device is configured to conduct electricity between the top metal stack and the backside metal. | 2015-04-16 |
20150102361 | SEMICONDUCTOR DEVICES IN SIC USING VIAS THROUGH N-TYPE SUBSTRATE FOR BACKSIDE CONTACT TO P-TYPE LAYER - A Silicon Carbide (SiC) semiconductor device having back-side contacts to a P-type region and methods of fabrication thereof are disclosed. In one embodiment, an SiC semiconductor device includes an N-type substrate and an epitaxial structure on a front-side of the N-type substrate. The epitaxial substrate includes a P-type layer adjacent to the N-type substrate and one or more additional SiC layers on the P-type layer opposite the N-type substrate. The semiconductor device also includes one or more openings through the N-type substrate that extend from a back-side of the N-type substrate to the P-type layer and a back-side contact on the back-side of the N-type substrate and within the one or more openings such that the back-side contact is in physical and electrical contact with the P-type layer. The semiconductor device further includes front-side contacts on the epitaxial structure opposite the N-type substrate. | 2015-04-16 |
20150102362 | SILICON CARBIDE POWER DEVICE EQUIPPED WITH TERMINATION STRUCTURE - A silicon carbide power device equipped with termination structure comprises a silicon carbide substrate, a power element structure and a termination structure. The silicon carbide substrate contains a drift layer which has a first conductivity and includes an active zone and a termination zone. The power element structure is located in the active zone. The termination structure is located in the termination zone and has a second conductivity, and includes at least one first doped ring abutting and surrounding the power element structure and at least one second doped ring surrounding the first doped ring. The first doped ring has a first doping concentration smaller than that of the second doped ring and a first doping depth greater than that of the second doped ring, thereby can increase the breakdown voltage of the silicon carbide power device. | 2015-04-16 |
20150102363 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A silicon carbide semiconductor device has a first-conductivity-type semiconductor layer having a lower impurity concentration and formed on a first-conductivity-type semiconductor substrate, a second-conductivity-type semiconductor layer having a higher impurity concentration and selectively formed in the first-conductivity-type semiconductor layer, a second-conductivity-type base layer having a lower impurity concentration formed on a surface of the second-conductivity-type semiconductor layer, a first-conductivity-type source region selectively formed in a surface layer of the base layer, a first-conductivity-type well region formed to penetrate the base layer from a surface to the first-conductivity-type semiconductor layer, and a gate electrode formed via a gate insulation film on a surface of the base layer interposed between the source region and the well region. Portions of the respective second-conductivity-type semiconductor layers of different cells can be connected to each other by a connecting portion in a region under the well region. | 2015-04-16 |
20150102364 | Semiconductor Device with Low-Conducting Buried and/or Surface Layers - A device including one or more low-conducting layers is provided. A low-conducting layer can be located below the channel and one or more attributes of the low-conducting layer can be configured based on a minimum target operating frequency of the device and a charge-discharge time of a trapped charge targeted for removal by the low-conducting layer or a maximum interfering frequency targeted for suppression using the low-conducting layer. For example, a product of the lateral resistance and a capacitance between the low-conducting layer and the channel can be configured to be larger than an inverse of the minimum target operating frequency and the product can be smaller than at least one of: the charge-discharge time or an inverse of the maximum interfering frequency. | 2015-04-16 |
20150102365 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nanostructure semiconductor light emitting device includes a base layer, an insulating layer and a plurality of light emitting nanostructures. The base layer is formed of a first conductivity type semiconductor. The insulating layer is disposed on the base layer and has a plurality of openings through which regions of the base layer are exposed. Each of the light emitting nanostructures is disposed on the exposed regions of the base layer and includes nanocore formed of a first conductivity type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on side surfaces of the nanocore. Upper surfaces of the light emitting nanostructures are non-planar and contain portions free of the second conductivity-type semiconductor layer in order to prevent light emissions during device driving. | 2015-04-16 |
20150102366 | Light Emitting Device - A light emitting device includes a semiconductor light emitting element that is disposed on a surface of a board, a transparent phosphor plate that includes phosphors, a transparent bonding member that fixedly bonds an upper surface of the semiconductor light emitting element to a lower surface of the phosphor plate, and a reflective layer that surrounds the semiconductor light emitting element and the phosphor plate and contains light-reflective fine particles. The semiconductor light emitting element includes an exposed portion that is provided near an outer peripheral edge of the upper surface of the semiconductor light emitting element and is not covered by the phosphor plate but exposed. A portion of an outer peripheral end surface of the phosphor plate, which is located near the upper surface of the phosphor plate, is not covered by the bonding member. | 2015-04-16 |
20150102367 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20° to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20° to 80° from a horizontal plane. | 2015-04-16 |
20150102368 | Optoelectronic Component - An optoelectronic component can be used for mixing electromagnetic radiation having different wavelengths, in particular in the far field. The optoelectronic component includes a carrier. A first semiconductor chip has a first radiation exit surface for emitting electromagnetic radiation in a first spectral range is provided on the carrier and a second semiconductor chip as a second radiation exit surface for emitting electromagnetic radiation in a second spectral range is provided on the carrier. A diffusing layer is provided on the radiation exit surfaces of the semiconductor chips which face away from the carrier. | 2015-04-16 |
20150102369 | LIGHT EMITTING APPARATUS AND ILLUMINATING APPARATUS - A light emitting device ( | 2015-04-16 |
20150102370 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light emitting device is disclosed. The light emitting device includes a conductive support layer; a reflective layer disposed on the conductive support layer; a nitride semiconductor layer disposed on the reflective layer. Furthermore, the nitride semiconductor layer includes a second-type semiconductor layer on the reflective layer, an active layer on the second-type semiconductor layer, and a first-type semiconductor layer on the active layer; a light extraction structure disposed on the first-type semiconductor layer; and a first-type electrode disposed on the light extraction structure. | 2015-04-16 |
20150102371 | EPITAXIAL FILM FORMING METHOD, SPUTTERING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT, SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND ILLUMINATION DEVICE - The present invention has an object to provide an epitaxial film forming method of epitaxially growing a high-quality group III nitride semiconductor thin film on an α-Al | 2015-04-16 |
20150102372 | SEMICONDUCTOR DEVICE FOR EMITTING FREQUENCY-ADJUSTED INFRARED LIGHT - A semiconductor device for emitting frequency-adjusted infrared light includes a lateral emitter structure and a lateral filter structure. The lateral emitter structure is configured to emit infrared light with an emitter frequency distribution. Further, the lateral filter structure is configured to filter the infrared light emitted by the lateral emitter structure so that frequency-adjusted infrared light is provided with an adjusted frequency distribution. The frequency range of the adjusted frequency distribution is narrower than a frequency range of the emitter frequency distribution. Further, a lateral air gap is located between the lateral emitter structure and the lateral filter structure. | 2015-04-16 |
20150102373 | LIGHT EMITTING DIODE PACKAGE AND METHOD OF MANUFACTURING THE SAME - There is provided a light emitting diode (LED) package. The LED package includes a package body. The LED package also includes an LED chip mounted on the package body. The LED package further includes a side inclined portion disposed to enclose side surfaces of the LED chip, including a light transmission material and having an upwardly inclined surface. The LED package also includes a wavelength conversion layer disposed on a top surface of the LED chip and the inclined surface of the side inclined portion. | 2015-04-16 |
20150102374 | OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING IT - An optoelectronic component is specified. According to at least one embodiment of the invention, the optoelectronic component comprises a housing ( | 2015-04-16 |
20150102375 | LIGHT EMITTING DEVICE PACKAGE - A light emitting device package is disclosed. The light emitting device package includes a package body including at least one ceramic layer, a submount disposed at the package body, a light emitting device disposed on the submount for emitting ultraviolet (UV)-wavelength light, and an anti-reflection (AR) coating layer disposed around the light emitting device, the AR coating layer being formed of an inorganic coating layer. | 2015-04-16 |
20150102376 | LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS - A light-emitting device includes a light-emitting element disposed in a display region and including a first electrode, a second electrode, and a light-emitting functional layer. The light-emitting device includes a wiring formed in a periphery of the display region and that is electrically connected to the second electrode, and a filter layer having a first color filter that overlaps the light-emitting element and a first layer that overlaps the peripheral wiring. The first color filter and the first layer are formed from a first colored layer that transmits light having a first wavelength. | 2015-04-16 |
20150102377 | FLIP CHIP LIGHT EMITTING DIODE PACKAGE STRUCTURE - A flip chip light emitting diode package structure includes a package carrier, a light guiding unit and at least one light emitting unit. The light guiding unit and the light emitting unit are disposed on the package carrier, and the light emitting unit is located between the light guiding unit and the package carrier. A horizontal projection area of the light guiding unit is greater than that of the light emitting unit. The light emitting unit is adapted to emit a light beam, and the light beam enters the light guiding unit and emits from an upper surface of the light guiding unit away from the light emitting unit. | 2015-04-16 |
20150102378 | LIGHT EMITTING DIODE PACKAGE STRUCTURE - A light-emitting diode package structure includes a package carrier, a light guiding component and a light emitting unit. The light guiding component is disposed on the package carrier. The light emitting unit is disposed on an upper surface of light guiding component relatively distant from the package carrier. A horizontal projection area of the light guiding component is greater than that of the light emitting unit. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding component and emits from the upper surface of the light guiding component. An included angle existing between the light beam and a normal direction of the upper surface ranges from 0 degree to 75 degrees. | 2015-04-16 |
20150102379 | LIGHT EMITTING DIODE STRUCTURE - A light emitting diode structure includes a substrate and a light emitting unit. The substrate has a protrusion portion and a light guiding portion. The protrusion portion and the light guiding portion have a seamless connection therebetween, and a horizontal projection area of the protrusion portion is smaller than that of the light guiding portion. The light emitting unit is disposed on the protrusion portion of the substrate. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding portion from the protrusion portion and emits from an upper surface of the light guiding portion uncovered by the protrusion portion. | 2015-04-16 |
20150102380 | LIGHT-EMITTING ELEMENT MOUNTING PACKAGE, MANUFACTURING METHOD OF THE SAME, AND LIGHT-EMITTING ELEMENT PACKAGE - A light-emitting element mounting package including a first wiring forming a first light-emitting element mounting portion, which is provided on one surface of a substrate to mount a light-emitting element, and a first through wiring having one end and another end, the one end being electrically connected to the first light-emitting element mounting portion so as to be thermally transferable, and the other end protruding from another surface of the substrate. | 2015-04-16 |
20150102381 | SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL LAYER - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer. | 2015-04-16 |
20150102382 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a light emitting unit, a first metal layer, a second metal layer, and an intermediate layer. The light emitting unit includes a semiconductor light emitting layer. The first metal layer includes a first metal. The second metal layer is provided between the first metal layer and the light emitting unit and includes the first metal. The intermediate layer is provided between the first metal layer and the second metal layer and includes an intermetallic compound including a second metal. | 2015-04-16 |
20150102383 | POWER DEVICE CASSETTE WITH AUXILIARY EMITTER CONTACT - A press pack module includes a collector module terminal, an emitter module terminal, a gate module terminal, and an auxiliary module terminal. Each IGBT cassette within the module includes a set of shims, two contact pins, and an IGBT die. The first contact pin provides part of a first electrical connection between the gate module terminal and the IGBT gate pad. The second contact pin provides part of a second electrical connection between the auxiliary module terminal and a shim that in turn contacts the IGBT emitter pad. The electrical connection between the auxiliary emitter terminal and each emitter pad of the many IGBTs is a balanced impedance network. The balanced network is not part of the high current path through the module. By supplying a gate drive signal between the gate and auxiliary emitter terminals, simultaneous IGBT turn off in high speed and high current switching conditions is facilitated. | 2015-04-16 |
20150102384 | ESD Protection with Asymmetrical Bipolar-Based Device - An electrostatic discharge (ESD) protection device includes a semiconductor substrate comprising a buried insulator layer and a semiconductor layer over the buried insulator layer having a first conductivity type, and first and second bipolar transistor devices disposed in the semiconductor layer, laterally spaced from one another, and sharing a common collector region having a second conductivity type. The first and second bipolar transistor devices are configured in an asymmetrical arrangement in which the second bipolar transistor device includes a buried doped layer having the second conductivity type and extending along the buried insulator layer from the common collector region across a device area of the second bipolar transistor device. | 2015-04-16 |
20150102385 | HYBRID SILICON GERMANIUM SUBSTRATE FOR DEVICE FABRICATION - Systems and methods are provided for fabricating a semiconductor device structure. An example semiconductor device structure includes a first buffer layer, a second buffer layer, a n-type transistor structure, and a p-type transistor structure. The first buffer layer having a first germanium concentration is formed on a substrate. The second buffer layer having a second germanium concentration is formed on the substrate, the second germanium concentration being larger than the first germanium concentration. The n-type transistor structure is formed on the first buffer layer, and the p-type transistor structure is formed on the second buffer layer. | 2015-04-16 |
20150102386 | Passivated and Faceted for Fin Field Effect Transistor - A fin field effect transistor (FinFET), and a method of forming, is provided. The FinFET has a fin having one or more semiconductor layers epitaxially grown on a substrate. A first passivation layer is formed over the fins, and isolation regions are formed between the fins. An upper portion of the fins are reshaped and a second passivation layer is formed over the reshaped portion. Thereafter, a gate structure may be formed over the fins and source/drain regions may be formed. | 2015-04-16 |
20150102387 | High Electron Mobility Transistors with Minimized Performance Effects of Microcracks in the Channel Layers - In HEMTs based on III-nitrides epitaxial films or GaAs, AlGaAs and InGaAs epitaxial films, unwanted microcracks are often formed in the composite epitaxial layers in the channel region during fabrication and operation. These microcracks are caused by strain or stresses due to lattice mismatch and thermal expansion coefficient differences between materials and substrate's. Those microcracks will bring about an increase in source to drain resistance and lead to performance and reliability degradation of the HEMTs and the MMICs containing them. The present invention provides HEMTs with minimized effects of the unwanted microcracks by aligning the channel region long axis to a certain direction so that the channel region long axis forms a right angle with axis of at least one type of the microcracks. | 2015-04-16 |
20150102388 | Semiconductor Device with Multiple Space-Charge Control Electrodes - A circuit including a semiconductor device having a set of space-charge control electrodes is provided. The set of space-charge control electrodes is located between a first terminal, such as a gate or a cathode, and a second terminal, such as a drain or an anode, of the device. The circuit includes a biasing network, which supplies an individual bias voltage to each of the set of space-charge control electrodes. The bias voltage for each space-charge control electrode can be: selected based on the bias voltages of each of the terminals and a location of the space-charge control electrode relative to the terminals and/or configured to deplete a region of the channel under the corresponding space-charge control electrode at an operating voltage applied to the second terminal. | 2015-04-16 |
20150102389 | HETEROJUNCTION BIPOLAR TRANSISTOR GEOMETRY FOR IMPROVED POWER AMPLIFIER PERFORMANCE - A heterojunction bipolar transistor includes a base mesa, an emitter assembly formed over the base mesa, and a base contact. The emitter assembly includes multiple circular sectors. Each circular sector is spaced apart from one another such that a sector gap is formed between radial sides of adjacent circular sectors. The base contact, which is formed over the base mesa, has a central portion and multiple radial members. Each radial member extends outward from the central portion of the base contact along a corresponding sector gap. As such, each of the circular sectors of the emitter assembly is separated by a radial member of the base contact. The number of circular sectors may vary from one embodiment to another. For example, the emitter assembly may have three, four, six, or more circular sectors. | 2015-04-16 |
20150102390 | INTEGRATED CMOS BACK CAVITY ACOUSTIC TRANSDUCER AND THE METHOD OF PRODUCING THE SAME - A MEMS device includes a MEMS substrate with a movable element. Further included is a CMOS substrate with a cavity, the MEMS substrate disposed on top of the CMOS substrate. Additionally, a back cavity is connected to the CMOS substrate, the back cavity being formed at least partially by the cavity in the CMOS substrate and the movable element being acoustically coupled to the back cavity. | 2015-04-16 |
20150102391 | JUNCTION FIELD EFFECT TRANSISTOR, AND METHOD OF MANUFACTURE THEREOF - A method of forming a junction field effect transistor, the transistor comprising: a back gate; a channel; a top gate; a drain and a source in current flow with the channel; wherein the method comprises selecting a first channel dimension between the top gate and the back gate such that a significant current flow path in the channel occurs in a region of relatively low electric field strength. | 2015-04-16 |
20150102392 | FinFETs and Methods for Forming the Same - A FinFET and methods for forming a FinFET are disclosed. A method includes forming a semiconductor fin on a substrate, implanting the semiconductor fin with dopants, and forming a capping layer on a top surface and sidewalls of the semiconductor fin. The method further includes forming a dielectric on the capping layer, and forming a gate electrode on the dielectric. | 2015-04-16 |
20150102393 | FIN-TYPE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF - A FinFET device includes a gate dielectric layer on a substrate, a fin on the gate dielectric layer having a middle section and source and drain regions at opposite ends, and a gate structure on the middle section of the fin. The FinFET device also includes a trench in a portion of the source and drain regions and a multi-layered epitaxial structure in the trench. The multi-layered epitaxial structure includes a first epitaxial layer in direct contact with the bottom of the trench, a second epitaxial layer on the first epitaxial layer, and a third epitaxial layer on the second epitaxial layer. The first epitaxial layer is a carbon-doped silicon layer having a carbon dopant concentration of less than 4 percent by weight, the second epitaxial layer is a barrier metal layer, and the third epitaxial layer is a metal layer. | 2015-04-16 |
20150102394 | ELECTROSTATIC DISCHARGE PROTECTION DEVICE - An electrostatic discharge (ESD) protection device includes a substrate including a plurality of active fins and a plurality of grooves. The ESD protection device includes an insulation layer on the active fins and the grooves, and a gate electrode on the active fins. The ESD protection device includes a first impurity region adjacent to a first side of the gate electrode, and a second impurity region adjacent to a second side of the gate electrode. The second side of the gate electrode may be arranged opposite to the first side. The ESD protection device includes an electrode pattern of a capacitor overlapping the first impurity region, a resistor overlapping the second impurity region, and a connection structure electrically connecting the electrode pattern, the gate electrode, and the resistor to each other. | 2015-04-16 |