15th week of 2009 patent applcation highlights part 32 |
Patent application number | Title | Published |
20090093017 | Nucleic Acids Encoding Recombinant Protein A - Disclosed are new recombinant nucleic acids encoding protein A polypeptides and methods of using these nucleic acids. | 2009-04-09 |
20090093018 | METHOD OF PRODUCING HETERODIMER DERIVATIVE OF PROTEIN PHOSPHATASE TYPE 2A ENZYME - The purpose of the invention is to provide an activated protein phosphatase 2A (PP2A) in large quantities with high purity by a genetic engineering and to provide a method for producing a heterodimer derivative of PP2A which comprises infecting insect cultured cells with a baculovirus in which a cDNA encoding the catalytic subunit of PP2A carrying a first tag is integrated together with another baculovirus in which a cDNA encoding the A subunit of PP2A carrying a second tag is integrated, incubating the infected cells, disrupting the incubated cells to obtain a disrupted cell suspension, and then purifying the disrupted cell suspension with a solid phase carrying a substance capable of binding to the first tag and another solid phase carrying a substance capable of binding to the second tag, characterized in that the insect cells infected with the baculovirus are incubated at a temperature of from 18 to 22° C. | 2009-04-09 |
20090093019 | PRODUCTION AND IN VIVO ASSEMBLY OF SOLUBLE RECOMBINANT ICOSAHEDRAL VIRUS-LIKE PARTICLES - The present invention provides an improved method for the in vivo production of soluble assembled virus-like particles (“VLPs”) in bacterial cells of Pseudomonad origin. The Pseudomonad cells support assembly of VLPs from icosahedral viral capsid proteins (“CPs”) in vivo, and allow the inclusion of larger recombinant peptides as monomers or concatamers in the VLP. The invention specifically provides an improved method for the in vivo production of soluble assembled Cowpea Chlorotic Mottle Virus (“CCMV”) VLPs by introducing modifications into the CCMV CP that result in high yield production of soluble CP fusions in a | 2009-04-09 |
20090093020 | Methods for reducing or eliminating alpha-mannosidase resistant glycans in the production of glycoproteins - The present invention provides methods to reduce or eliminate α-mannosidase resistant glycans on glycoproteins in yeast. The reduction or elimination of α-mannosidase resistant glycans on glycoproteins results from the disruption of the newly isolated | 2009-04-09 |
20090093021 | LACTOBACILLUS ACIDOPHILUS NUCLEIC ACID SEQUENCES ENCODING CARBOHYDRATE UTILIZATION-RELATED PROTEINS AND USES THEREFOR - Carbohydrate utilization-related and multidrug transporter nucleic acids and polypeptides, and fragments and variants thereof, are disclosed in the current invention. In addition, carbohydrate utilization-related and multidrug transporter fusion proteins, antigenic peptides, and anti-carbohydrate utilization-related and anti-multidrug transporter antibodies are encompassed. The invention also provides vectors containing a nucleic acid of the invention and cells into which the vector has been introduced. Methods for producing the polypeptides and methods of use for the polypeptides of the invention are further disclosed. | 2009-04-09 |
20090093022 | Chemosensory gene family encoding gustatory and odorant receptors and uses thereof - This invention provides an isolated nucleic acid encoding an insect gustatory or odorant receptor. This invention provides a nucleic acid of at least 12 nucleotides capable of specifically hybridizing with a nucleic acid encoding an insect gustatory or odorant receptor. This invention also provides a purified, insect gustatory or odorant receptor. This invention provides an antibody capable of specifically binding to an insect gustatory or odorant receptor. This invention provides a method of identifying a compound capable of specifically binding to, activating, or inhibiting the activity of an insect gustatory or odorant receptor. This invention also provides methods of controlling insect populations. | 2009-04-09 |
20090093023 | Elements for improved expression of bovine somatotropin - The invention allows improved expression of heterologous polypeptides such as bovine somatotropin (bST). Novel compositions and methods are provided for production of bST from a native bST cDNA in transformed host cells such as | 2009-04-09 |
20090093024 | Methods of generating libraries and uses thereof - This invention relates to methods for the generation of polynucleotide seed libraries and the use of these libraries in generating novel mutants of recombinant proteins and, more particularly, for generating focused libraries of recombinant human antibodies and screening for their affinity binding with target antigens. | 2009-04-09 |
20090093025 | Twin-arginine translocation in Bacillus - Described herein are methods to enhance protein secretion in a host cell. In preferred embodiment, the host cell is a gram-positive microorganism such as a | 2009-04-09 |
20090093026 | TRANSDUCIBLE DELIVERY OF siRNA BY dsRNA BINDING DOMAIN FUSIONS TO PTD/CPPS - The disclosure provides fusion polypeptides and constructs useful in delivering anionically charged nucleic acid molecules including diagnostics and therapeutics to a cell or subject. The fusion constructs include a protein transduction domain and a nucleic acid binding domain, or a protein transduction domain and a nucleic acid that is coated with one or more nucleic acid binding domains sufficient to neutralize an anionic charge on the nucleic acid. Also provided are methods of treating disease and disorders such as cell proliferative disorders. | 2009-04-09 |
20090093027 | Process for producing sugars and ethanol using corn stillage - A process for producing sugars from lignocellulosic materials such as corn stover by the addition of corn stillage as a carbon source is disclosed. The sugars are formed by treating the combination of the corn stillage and the lignocellulosic materials with hydrolytic enzymes. The sugars can be fermented to ethanol, and the process improves ethanol production economies with an increased sugar yield from the lignocellulosic materials. | 2009-04-09 |
20090093028 | APPARATUS AND METHODS FOR TREATING BIOMASS - An apparatus for treating plant biomass is described herein. Generally, the apparatus includes a pressurizable vessel and a heating element in thermal communication with the vessel. Also described herein are methods of treating plant biomass. Generally, the methods include heating plant biomass under conditions effective to at least partially depolymerize hemicellulose and/or cellulose present in the plant biomass. In one embodiment, the method includes heating a plant biomass substrate to a temperature of 230° C. for two minutes at a pressure of 57 psig. | 2009-04-09 |
20090093029 | METHOD FOR PRODUCING L-AMINO ACID - An L-amino acid is produced by culturing an Enterobacteriaceae which is able to produce an L-amino acid in a medium containing glycerol, especially crude glycerol, as the carbon source to produce and accumulate the L-amino acid in the culture, and collecting the L-amino acid from the culture. | 2009-04-09 |
20090093030 | fadR KNOCK-OUT MICROORGANISM AND METHODS FOR PRODUCING L-THREONINE - The present invention relates to an L-threonine-producing chromosomal fadR gene knock-out microorganism. The present invention further relates to a method for producing L-threonine using a fadR knock-out microorganism. Mutated microorganisms of the present invention are capable of increased L-threonine production. | 2009-04-09 |
20090093031 | Ketoreductase Polypeptides for the Production of (R)-3-Hydroxythiolane - The present disclosure provides engineered ketoreductase enzymes having improved properties as compared to a naturally occurring wild-type ketoreductase enzyme. Also provided are polynucleotides encoding the engineered ketoreductase enzymes, host cells capable of expressing the engineered ketoreductase enzymes, and methods of using the engineered ketoreductase enzymes to synthesize chiral compounds. | 2009-04-09 |
20090093032 | PROCESS FOR PRODUCING 7-METHOXY-3-DESACETYLCEFALOTIN - Process for producing 7-methoxy-3-desacetylcefalotin by a hydrolysis process which takes place in water and is catalyzed by an enzyme. Cefoxitin can be obtained from this compound by known methods. | 2009-04-09 |
20090093033 | PUFA-PKS Genes From Ulkenia - The invention relates to genes which are coded for sequences specific to polyketide synthases (PKS). The thus synthesized PKS is characterized by the enzymatic capacity thereof to produce PUFAs (polyunsaturated fatty acids). The invention also relates to the identification of the corresponding DNA-sequences, in addition to the use of said nucleotide sequences for the production of recombined and/or transgenic organisms. | 2009-04-09 |
20090093034 | Method for Separation of Lactic Acid Component from Lactic Acid Fermentation Liquor, and Separation Apparatus - A lactic acid component (e.g., lactic acid or oligo (lactic acid)) can be obtained by extraction from a lactic acid fermentation liquor with a pH of 4.8 or less, using at least one solvent selected from the group consisting of toluene, xylene, mesitylene, ethylbenzene, methanol, ethanol, propanol, butanol, and mineral spirit. Furthermore, oligo (lactic acid) can be obtained, by heating a lactic acid fermentation liquor with a pH of 4.8 or less under reduced pressure, and washing, with water, the fermentation liquor containing a produced oligo (lactic acid). Hence, a method is provided for separating a lactic acid component from a lactic acid fermentation liquor, which is free from incorporation of impurities and which includes simple steps. | 2009-04-09 |
20090093035 | Blocking Sporulation by Inhibiting SPOIIE - We have shown that the control of solventogenesis and sporulation can be genetically uncoupled in | 2009-04-09 |
20090093036 | METHOD FOR RELEASING GENETIC MATERIAL FROM SOLID PHASE - The present invention relates to systems for releasing genetic materials from a solid medium. The present invention also relates to methods for releasing genetic materials from a solid medium. The present invention further relates to methods for isolating genetic material from a biological sample. | 2009-04-09 |
20090093037 | METHOD AND APPARATUS FOR ACCELERATING GROWTH OF LACTIC ACID BACTERIA WITH ELECTRIC FIELD - The method and apparatus for accelerating growth of lactic acid bacteria, which apply an electric field to the lactic acid bacteria using an electric field in a frequency band of 1 kHz to 1 MHz, can be applied to all lactic acid bacteria used in home and industries to accelerate the growth of them and can be used to increase the number of the lactic acid bacteria and the production of all metabolites (for example, lactic acid and carbon dioxide) of the lactic acid bacteria. The invention increases the lactic acid bacteria and the production of the metabolites of the lactic acid bacteria, thereby activating the beneficial fermentation action of the processed foods such as fermented milk, lactic acid bacteria-containing beverage, toenjang or salted foods (kimchi or pickle and the like). In addition, the invention lowers pH of the foods to suppress the proliferation of the harmful microbes, and makes the low oxygen/oxygen-free environment using the carbon dioxides produced as metabolism by-products, thereby increasing the flavor of the foods and prolonging the preservation period. | 2009-04-09 |
20090093038 | Method for the production of pure virally inactivated butyrylcholinesterase - The present invention provides a method for purifying butyrylcholinesterase from various biological fluids. Biological fluids include, e.g., blood, blood fractions, plasma, and bioreactor broths, and other such mixtures containing butyrylcholinesterase. In one embodiment, the invention provides a method for the production of purified, virally inactivated butyrylcholinesterase by contacting a biological fluid containing butyrylcholinesterase with a cationic exchange chromatography material, with an affinity chromatography material, and treating the fluid with solvent detergent. The resulting purified butyrylcholinesterase can also be subjected to a pasteurization step, and formulated in a sodium chloride/sodium phosphate solution for storage or lyophilization. | 2009-04-09 |
20090093039 | REGULATABLE GROWTH OF FILAMENTOUS FUNGI - The present invention generally relates to hyphal growth in fungi and in particular describes the modulation of genes associated with hyphal growth in filamentous fungi. The present invention provides methods and systems for the production of proteins and/or chemicals from filamentous fungi which comprise modulation of genes associated with hyphal growth. Specifically, the present invention is directed to a full length cotA gene, its gene product and methods of use. | 2009-04-09 |
20090093040 | Bovine immunodeficiency virus (BIV) based vectors - This invention pertains to BIV constructs encompassing BIV combination vectors, BIV vectors and BIV packaging vectors and particularly the invention pertains to a three vector system comprising: a) a BIV vector construct including a DNA segment from a BIV genome, a packaging sequence to package RNA into virions; a promoter operably linked to the DNA segment; and a transgene operably linked to a second promoter; b) a BIV packaging vector construct comprising a BIV DNA sequence fragment comprising at least a gag gene or pol gene of BIV; a promoter operably linked to the BIV DNA fragment; and a polyadenylation sequence located downstream of the BIV DNA fragment; and c) an expression vector construct comprising a gene encoding a viral surface protein. Also provided is a method for transferring a gene of interest into a mammalian cell. | 2009-04-09 |
20090093041 | METHODS FOR DRYING BACTERIOPHAGE AND BACTERIOPHAGE CONTAINING COMPOSITIONS, THE RESULTING DRY COMPOSITIONS, AND METHODS OF USE - Liquid bacteriophage products may be dried to form dry bacteriophage products. Drying may be effected by pulse combustion drying processes. When dried, the number of viable bacteriophage particles is reduced by no more than about two log (10 | 2009-04-09 |
20090093042 | BIOFILTER MEDIA TO REMOVE ODOUR CAUSING COMPOUNDS FROM WASTE GAS STREAMS - A biofilter media has one or more of a set of desired physical characteristics. The set of physical characteristics includes a sphericity of 0.75 to 1, a particle size of 1 to 16 or 4 to 8 mm, a uniformity coefficient of 2 or less and a surface area of 800 to 2000 m | 2009-04-09 |
20090093043 | THERMOSTABLE NUCLEIC ACID POLYMERASE FROM THERMOCOCCUS GORGONARIUS - A purified thermostable enzyme is derived form the thermophilic archaebacterium | 2009-04-09 |
20090093044 | METHOD FOR TREATING ORGANIC MATTER TO PROMOTE MOULDERING - The present invention relates to a method for treating organic matter to promote mouldering wherein the organic material is subjected to a splitting process followed by a freeze drying process prior to being transferred for deposition for mouldering. | 2009-04-09 |
20090093045 | ORGANISM TESTING APPARATUS - An organism testing apparatus adapted to measure the organisms in a specimen in stable fashion is disclosed in which the organisms are stained, the specimen is concentrated and the information on the organisms contained in the specimen are acquired through a simple process. The apparatus includes a staining unit for staining the organisms having live cells existing in a flowing liquid specimen, a concentration unit for concentrating the organisms in a flowing stained specimen, an individual measuring unit for acquiring the image information on the individuals containing the organisms in the concentrated specimen, and a control unit for measuring the organisms based on the image information on the individuals output from the individual measuring unit. | 2009-04-09 |
20090093046 | Incubation apparatus - An incubation apparatus, including a temperature-controlled room adjusted to be a predetermined environment condition, and incubating a sample of an incubation container inside the temperature-controlled room, includes a carrying apparatus, an imaging section, and an image analyzing section. The carrying apparatus carries the incubation container in the temperature-controlled room. The imaging section photographs a whole of the incubation container inside the temperature-controlled room. The image analyzing section analyses an operation state of the incubation apparatus or an incubating environment state of the sample based on a total observing image of the incubation container photographed at the imaging section, and outputs an error signal notifying an abnormality of the operation state or the incubating environment state in accordance with the analysis result. | 2009-04-09 |
20090093047 | Kit and Device for Generating Chemiluminescence Radiation - A device for generating a chemiluminescence radiation depending on the binding of at least one ligand that is contained in a sample that is to be tested to at least one receptor that is binding-specific for the ligand has a flow cell having an internal cavity. The internal cavity has a separating wall on which the at least one receptor is immobilized. The internal cavity has at least two compartments. In a first compartment solid is deposited that contains at least one peroxidase-enzyme-possessing marker for marking the ligand in lyophilized form. A second compartment contains salt-stabilized luminol and a solid substance that releases hydrogen peroxide upon contact with water. | 2009-04-09 |
20090093048 | PROMOTERS AND USAGE THEREOF - Promoters and usage thereof. Two promoters, acuF and hsp promoters, comprise the nucleotide sequences of SEQ ID NO: 1 and 2, respectively. | 2009-04-09 |
20090093049 | Methods of Identifying Synthetic Transcriptional and Translational Regulatory Elements, and Compositions Related to Same - Provided are methods of identifying oligonucleotides having transcriptional or translational activity by integrating ilie oligonucleotide into a eukaryotic cell genome such that the oligonucleotide is operatively linked to an expressible polynucleotide, and detecting a change in expression of the expressible polynucleotide due to the operatively linked oligonucleotide. Also provided are vectors useful for identifying an oligonucleotide having transcriptional or translational regulatory activity according to a method of the invention. In addition, isolated synthetic transcriptional or translational regulatory elements identified according to a method of the invention are provided, as are kits, which contain a vector useful for identifying a transcriptional or translational regulatory element, or an isolated synthetic transcriptional or translational regulatory element or plurality of such elements. Also provided are isolated transcriptional regulatory elements. | 2009-04-09 |
20090093050 | DNA Vaccine Enhancement with MHC Class II Activators - Methods for treating or preventing hyperproliferating diseases, e.g., cancer, are described. A method may comprise administering to a subject in need thereof a therapeutically effective amount of a nucleic acid encoding an MHC class I and/or II activator and optionally a nucleic acid encoding an antigen. | 2009-04-09 |
20090093051 | T1R1 Nucleic Acid Sequences and Vectors Containing Same - Newly identified mammalian taste-cell-specific G protein-coupled receptors, and the genes and cDNA encoding said receptors are described. Specifically, T1R G protein-coupled receptors active in taste signaling, and the genes and cDNA encoding the same, are described, along with methods for isolating such genes and for isolating and expressing such receptors. Methods for representing taste perception of a particular tastant in a mammal are also described, as are methods for generating novel molecules or combinations of molecules that elicit a predetermined taste perception in a mammal, and methods for simulating one or more tastes. Further, methods for stimulating or blocking taste perception in a mammal are also disclosed. | 2009-04-09 |
20090093052 | Human Hematopoietic Stem And Progenitor Antigen And Methods For Its Use - A hematopoietic progenitor cell antigen and reagents, notably antibodies, that specifically bind to the antigen are provided. Expression of the antigen is highly tissue specific. It is only detected on a subset of hematopoietic progenitor cells derived from human bone marrow, fetal bone marrow and liver, cord blood and adult peripheral blood. The subset of cells recognized by AC133 is CD34 | 2009-04-09 |
20090093053 | CD44 polypeptides, polynucleotides encoding same, antibodies directed thereagainst and method of using same for diagnosing and treating inflammatory diseases - An isolated polypeptide is provided. The isolated polypeptide comprising an antigen recognition domain capable of specifically binding a CD44 polypeptide as set forth in SEQ ID NO: 2 and incapable of binding a CD44 polypeptide selected from the group consisting of: SEQ ID NO: 4 or 6. | 2009-04-09 |
20090093054 | CRYOPRESERVATION OF HUMAN BLASTOCYST-DERIVED STEM CELLS BY USE OF A CLOSED STRAW VITRIFICATION METHOD - An improved method for vitrification of biological cells, especially blastocyst-derived stem cells (BS cells). The method is very mild for the cells that remain viable after they have been thawed. The method comprises, i) transfer of the cells to a first solution (solution A), ii) optionally incubation of the cells in the first solution, iii) transfer the cells obtained in step i) or ii) to a second solution (solution B), iv) optionally incubation of the cells in the second solution, v) transfer of the cells obtained from step iii) or iv) into one or more closed straws with dimensions that allow a volume of at least 20 μl to be contained in them vi) sealing the one or more closed straws, and vii) vitrification of the one or more closed straws. An important feature of the present invention is the use of closed straw and that relatively large volumes can be efficiently vitrified and subsequently thawed. | 2009-04-09 |
20090093055 | Islet Cells from Human Embryonic Stem Cells - This disclosure provides a system for producing pancreatic islet cells from embryonic stem cells. Differentiation is initiated towards endoderm cells, and focused using reagents that promote emergence of islet precursors and mature insulin-secreting cells. High quality populations of islet cells can be produced in commercial quantities for use in research, drug screening, or regenerative medicine. | 2009-04-09 |
20090093056 | Adult Stem Cell-Derived Connective Tissue Progenitors for Tissue Engineering - Methods of generating and expanding proliferative, multipotent connective tissue progenitor cells from adult stem cells are provided. Also provided are methods of generating functional tendon grafts in vitro and bone, cartilage and connective tissues in vivo using the isolated cell preparation of connective tissue progenitor cells. | 2009-04-09 |
20090093057 | Interleukin-22 polypeptides, nucleic acids encoding the same and methods for the treatment of pancreatic disorders - The present invention is directed to interleukin-22 polypeptides and nucleic acid molecules encoding those polypeptides. Also provided herein are vectors and host cells comprising those nucleic acid sequences, chimeric polypeptide molecules comprising the polypeptides of the present invention fused to heterologous polypeptide sequences, antibodies which bind to the polypeptides of the present invention and to methods for producing the polypeptides of the present invention. | 2009-04-09 |
20090093058 | CELL TRANSFECTION ARRAY FOR INTRODUCTION OF NUCLEIC ACID - The subject of the present invention is to provide a microarray for introducing nucleic acid, the microarray capable of introducing and expressing nucleic acid into cells simply by adding the nucleic acid onto a plate and the like, and then seeding the cells thereon and culturing them without adding a nucleic acid-introducing reagent or additives. The subject is achieved by preparing the microarray including atelocollagen, a gene-introducing agent and nucleic acid on a plate and the like for the introduction of nucleic acid. The nucleic acid can be introduced into a cell by seeding cells into which nucleic acids are introduced on the microarray and culturing them without the need of preparing a mixture of viral vectors, nucleic acids and a nucleic acid-introducing agent after culturing cells or the need of adding a nucleic acid-introducing agent and additives. | 2009-04-09 |
20090093059 | COMPOSITIONS AND METHODS TO STACK MULTIPLE NUCLEOTIDE SEQUENCES OF INTEREST IN THE GENOME OF A PLANT - Methods and compositions for the stacking of multiple nucleotide sequences at precise locations in the genome of a plant or plant cell are provided. Specifically, transfer cassettes comprising nucleotide sequences of interest flanked by non-identical recombination sites are introduced into a plant comprising a target site. The target site contains at least a set of non-identical recombination sites corresponding to those on the transfer cassette. Exchange of the nucleotide sequences flanked by the recombination sites is effected by a recombinase. The transfer cassettes and target sites are designed so as to allow for the stacking or ordering of nucleotide sequences at precise locations in the plant genome. | 2009-04-09 |
20090093060 | Luminescent Protein Staining - The present invention relates to the use of cyclometalated iridium complexes for detecting poly(amino acids) including peptides, polypeptides, and proteins. Poly(amino acids) are detected in solution, in electrophorectic gels, and on solid supports, including blots. The method of the present invention is rapid, highly sensitive, and extremely facile. | 2009-04-09 |
20090093061 | Protein separation device - The invention provides a protein separation device comprising a chaperone protein immobilised on a substrate. In one embodiment, the chaperone protein is an Hsp60 chaperone, preferably a group one chaperone, preferably GroEL. The invention also provides a method for isolating a protein from a biological sample using a protein separation device of the invention. | 2009-04-09 |
20090093062 | Fluorescent Dye Compounds, Conjugates and Uses Thereof - The present teachings generally relate to fluorescent dyes, linkable forms of fluorescent dyes, energy transfer dyes, reagents labeled with fluorescent dyes and uses thereof. | 2009-04-09 |
20090093063 | Color Changing and Coverage Indicating Hand Sanitizer - The present invention includes compositions and methods for detection of the effectiveness of a substance for cleaning that include an electrophilic dye, wherein the electrophilic dye is colorless before exposure to a nucleophilic agent, and an nucleophilic agent, wherein the electrophilic dye, the nucleophilic agent or both are encapsulated and wherein exposure to one or more cognate target or condition triggers the release of the electrophilic dye, the nucleophilic agent or both from encapsulation. It also includes compositions and methods for detection of the effectiveness of a substance for cleaning by a recognitive dye, wherein the dye is colorless before exposure to its cognate target, changes color upon exposure to its cognate target and reverts to being colorless after a predetermined period of time by exposure to one or more environmental agents. | 2009-04-09 |
20090093064 | METHOD OF DETERMINING THE PRESENCE OF A MINERAL WITHIN A MATERIAL - An improved flow-through device is provided wherein foam produced by the pumping of fluid in the device is kept outside the reaction chambers by way of a hydrophobic or hydrophilic porous membrane acting as an air trap membrane. | 2009-04-09 |
20090093065 | ASPIRATING AND DISPENSING SMALL VOLUMES OF LIQUIDS - A metering device for aspirating and dispensing a liquid includes a housing; a pumping medium, preferably a gas containing chamber contained within the housing; a channel having a proximate end in fluid communication with the chamber and a distal end in fluid communication with an external environment; a heat or cold source providing a source of heat or cold to the gas containing chamber; and a temperature sensor for measuring the temperature inside the chamber. In a preferred embodiment, the device further includes a pressure sensor for measuring gas pressure inside the chamber, or multiple chambers. A method for aspirating and dispensing a liquid includes: providing a metering device for aspirating and dispensing a liquid that includes a housing; a gas containing chamber contained within the housing, the chamber; a channel having a proximate end in fluid communication with the chamber and a distal end in fluid communication with an external environment; a heat or cold source providing a source of heat or cold to the gas containing chamber; and a temperature sensor for measuring the temperature inside the chamber; providing a source of liquid to be aspirated; bringing the distal end of the channel into contact with the liquid; cooling the gas containing chamber with the heat or cold source to aspirate a first volume of liquid into the device; and heating the gas containing chamber to dispense a second volume of liquid out of the device. In a preferred embodiment, the metering device is a used in a diagnostic analyzer for determining the presence of one or more analytes in a sample. | 2009-04-09 |
20090093066 | GLYCATED PEPTIDES AND METHODS OF USE - The invention provides glycated peptides and glycated fragments and glycated variants thereof, antibodies and aptamers which bind thereto, compositions and kits comprising the same, related conjugates, and a database comprising data indicating the concentration of glycated peptides present in diabetic and non-diabetic persons. The invention also provides a method of monitoring glycemic control, a method of treating or preventing diabetes, a method of preventing a complication of diabetes, a method of monitoring the status of diabetes, a method of determining the efficacy of a diabetes treatment, as well as methods of detecting diabetes or a predisposition thereto. | 2009-04-09 |
20090093067 | METHODS FOR MAKING AND USING SPR MICROARRAYS - An article, process, and method for surface plasmon resonance plates are described. A substrate is covered with a thin metal film onto which a second thin metal film is deposited. The surface of the second thin metal film is converted to the metal oxide which is used to covalently bond organosilanes to the surface. Reactive organosilanes containing terminal bonding groups are arranged in a plurality of spots that are surrounded by inert organosilanes. Biomolecule attachment to the binding group is detected or measured from surface plasmon signals from the first thin metal film. | 2009-04-09 |
20090093068 | IMMUNOSENSOR AND MEASURING METHOD USING THE SAME - An immunosensor includes a base body ( | 2009-04-09 |
20090093069 | Topiramate Immunoassays - Diacetonefructose derivatives have substituents at the hydroxyl-position. Diacetonefructose derivatives may include immunogenic moieties to prepare anti-diacetonefructose derivative antibodies, or antigenic moieties for immunodiagnostic assays. Also, the diacetonefructose derivatives can include signal generating moieties for detecting the presence or amount of the diacetonefructose derivative in a sample. Additionally, the diacetonefructose derivatives can be used in immunodiagnostic assays to compete with topiramate for binding with anti-diacetonefructose derivative antibodies. Also, methods, compositions and kits are disclosed directed at diacetonefructose derivatives, immunogens, signal generating moieties and immunoassays for topiramate. | 2009-04-09 |
20090093070 | CAPACITOR, METHOD OF MANUFACTURING THE SAME, METHOD OF MANUFACTURING FERROELECTRIC MEMORY DEVICE, METHOD OF MANUFACTURING ACTUATOR, AND METHOD OF MANUFACTURING LIQUID JET HEAD - A method of manufacturing a capacitor, including: forming a lower electrode on a substrate; forming a dielectric film of a ferroelectric or a piezoelectric on the lower electrode; forming an upper electrode on the dielectric film; and forming a silicon oxide film so that at least the dielectric film is covered with the silicon oxide film, the silicon oxide film being formed by using trimethoxysilane. | 2009-04-09 |
20090093071 | THERMAL TREATMENT APPARATUS, THERMAL TREATMENT METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A thermal treatment apparatus having a first light source emitting a first light having light diffusion property, a reflectance measuring unit irradiating a treatment target with the light from plural directions by the first light source and determining a light reflectance of the treatment target, a light irradiation controller adjusting an intensity of a second light of a second light source on the basis of the light reflectance, the second light has diffusion property, and a thermal treatment unit irradiating the treatment target with the second light having adjusted the intensity of the second light by the light irradiation controller. | 2009-04-09 |
20090093072 | ELECTRONIC ASSEMBLIES WITH HOT SPOT COOLING AND METHODS RELATING THERETO - A composite of two or more thermal interface materials (“TIMs”) is placed between a die and a heat spreader to improve cooling of the die in an integrated circuit package. The two or more TIMs vary in heat-dissipation capability depending upon the locations of die hot spots. In an embodiment, a more thermally conductive material may be positioned over one or more die hot spots, and a less thermally conductive material may be positioned abutting and/or surrounding the more thermally conductive material. The two or more TIMs may comprise a solder and a polymer. The composite TIM may be preformed as one unit or as a plurality of units. Methods of fabrication, as well as application of the package to an electronic assembly and to an electronic system, are also described. | 2009-04-09 |
20090093073 | Method of making circuitized substrate with internal optical pathway using photolithography - A method of making a circuitized substrate (e.g., PCB) including at least one and possibly several internal optical pathways as part thereof such that the resulting substrate will be capable of transmitting and/or receiving both electrical and optical signals. The method involves forming at least one opening between a side of the optical core and an adjacent upstanding member such that the opening is defined by at least one angular sidewall. Light passing through the optical core material (or into the core from above) is reflected off this angular sidewall. The medium (e.g., air) within the opening thus also serves as a reflecting medium due to its own reflective index in comparison to that of the adjacent optical core material. The method utilizes many processes used in conventional PCB manufacturing, thereby keeping costs to a minimum. The formed substrate is capable of being both optically and electrically coupled to one or more other substrates possessing similar capabilities, thereby forming an electro-optical assembly of such substrates. | 2009-04-09 |
20090093074 | Light Emission From Silicon-Based Nanocrystals By Sequential Thermal Annealing Approaches - A method for enhancing photoluminescence includes providing a film disposed over a substrate, the film including at least one of a semiconductor and a dielectric material. Light emission may be activated by thermal annealing post growth treatments when thin film layers of SiO | 2009-04-09 |
20090093075 | METHOD OF SEPARATING SEMICONDUCTOR DIES - A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, metal layers are deposited everywhere except where a block of stop electroplating material exists. The stop electroplating material is obliterated, and a barrier layer is formed above the entire remaining structure. A sacrificial metal element is added above the barrier layer, and then the substrate is removed. After the semiconductor material between the individual dies is eradicated, any desired bonding pads and patterned circuitry are added to the semiconductor surface opposite the sacrificial metal element, a passivation layer is added to this surface, and then the sacrificial metal element is removed. Tape is added to the now exposed barrier layer, the passivation layer is removed, the resulting structure is flipped over, and the tape is expanded to separate the individual dies. | 2009-04-09 |
20090093076 | METHOD FOR MANUFACTURING MONOLITHIC SEMICONDUCTOR LASER - First and second semiconductor lasers interelement-separated from each other are formed. Total thickness of a fourth upper cladding layer and a second contact layer of the second semiconductor laser is smaller than total thickness of a second upper cladding layer and the first contact layer of the first semiconductor laser. First and second ridges are formed in the first and second semiconductor lasers by dry etching, using a resist as a mask, and the dry etching is stopped when a second etching stopper layer is exposed at the second ridge. The second upper cladding layer remaining on a first etching stopper layer at the first ridge is selectively removed by wet etching, using the resist as a mask. | 2009-04-09 |
20090093077 | METHOD OF MANUFACTURING GaN SUBSTRATE, METHOD OF MANUFACTURING EPITAXIALWAFER, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND EPITAXIALWAFER - Assuming that r (m) represents the radius of a GaN substrate, t | 2009-04-09 |
20090093078 | System and Method for High Temperature Compact Thermoelectric Generator (TEG) Device Construction - A method for creating an array of thermoelectric elements includes applying a first coating of dielectric material to P-type wafers and N-type wafers to form coated P-type wafers and coated N-type wafers. A P/N-type ingot is formed from the coated P-type wafers and the coated N-type wafers. The coated P-type wafers and the coated N-type wafers are alternatingly arranged in the P/N-type ingot. P/N-type wafers comprising P-type elements and N-type elements are sliced from the P/N-type ingot and a second coating of the dielectric material is applied to the P/N-type wafers to form coated P/N-type wafers. Furthermore, a P/N-type array from the coated P/N-type wafers. | 2009-04-09 |
20090093079 | METHOD OF PRODUCING AN ASYMMETRIC ARCHITECTURE SEMI-CONDUCTOR DEVICE - A method is for producing an asymmetric architecture semi-conductor device. The device includes a substrate, and in stacked relation, a first photosensitive layer, a non-photosensitive layer, and a second photosensitive layer. The method includes a first step of exposing a first zone in each of the photosensitive layers by a first beam of electrons traversing the non-photosensitive layer. A second step includes exposing at least one second zone of one of the two photosensitive layers by a second beam of electrons or photons or ions, thereby producing a widening of one of the first zones compared to the other first zone such that the second zone is in part superimposed on one of the first zones. | 2009-04-09 |
20090093080 | SOLAR CELLS AND METHODS AND APPARATUSES FOR FORMING THE SAME INCLUDING I-LAYER AND N-LAYER CHAMBER CLEANING - Embodiments of the present invention generally provide an apparatus and method for forming an improved thin film single or multi-junction solar cell in a substrate processing device. One embodiment provides a system that contains at least one processing chamber that is adapted to deposit one or more layers that form a portion of a solar cell device. In one embodiment, a method is employed to reduce the contamination of a substrate processed in the processing chamber by performing a cleaning process on the inner surfaces of the processing chamber prior to depositing the one or more layers on a substrate. The cleaning process may include depositing a layer, such as a seasoning layer or passivation layer, that tends to trap contaminants found in the processing chamber. Other embodiments of the invention may provide scheduling and/or positioning the cleaning processing steps at desirable times within a substrate processing sequence to improve the overall system substrate throughput. | 2009-04-09 |
20090093081 | Process of phosphorus diffusion for manufacturing solar cell - This invention discloses a process of phosphorus diffusion for manufacturing solar cell, comprising annealing a mono-crystalline silicon wafer in a nitrogen atmosphere at 900-950° C. for twenty to thirty minutes, carrying oxidation treatment in a hydrogen chloride atmosphere at 850-1050° C. to form a 10 to 30 nm thick oxide layer on the surface of said silicon wafer, diffusing from a phosphorus source at 850-900° C., until a block resistance of a material surface is controlled at 40 to 50 ohms, and the junction depth is at 0.2 to 1.0 microns, and annealing in a nitrogen atmosphere at 700-750° C. for thirty to sixty minutes to complete the phosphorus diffusion of said mono-crystalline silicon wafer. This invention allows the use of 4 N˜5 N mono-crystalline silicon as the material for manufacturing solar cells, so, the low purity material such as metallurgical silicon can be used, which greatly reduces the cost of materials. | 2009-04-09 |
20090093082 | ORGANIC LIGHT-EMITTING DIODE AND METHOD OF FABRICATING THE SAME - An organic light-emitting diode and method of fabricating the same. The organic light-emitting diode includes a first substrate, a first electrode installed on an inner surface of the first substrate, an organic light-emitting layer installed on the first electrode, a second electrode installed on the organic light-emitting layer, an oxide layer formed on the second electrode, and a second substrate bound to the inner surface of the first substrate to form an airtight space. | 2009-04-09 |
20090093083 | METHOD OF DEPOSITING CHALCOGENIDE FILM FOR PHASE-CHANGE MEMORY - Provided is a method of depositing a chalcogenide film for phase-change memory. When the chalcogenide film for phase-change memory is deposited through a method using plasma such as plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD), a plasma reaction gas including He is used such that the crystallinity of the chalcogenide film is adjusted and the grain size and morphology of the deposited film are adjusted. | 2009-04-09 |
20090093084 | Die offset die to bonding - A semiconductor die is provided on a spacer, the die having first and second opposite edges which extend beyond respective first and second opposite edges of the spacer, the first edge of the die extending beyond the first edge of the spacer to a lesser extent than the second edge of the die extends beyond the second edge of the spacer. Furthermore, a first semiconductor die has a plurality of bond pads thereon, a second semiconductor die has a plurality of bond pads thereon, and a substrate has a plurality of bond pads thereon. Each of a first plurality of wires connects a bond pad on the first semiconductor die with a bond pad on the second semiconductor die, and each of a second plurality of wires connects a bond pad on the second semiconductor die with a bond pad on the substrate. | 2009-04-09 |
20090093085 | Carrier Structure for stacked-type semiconductor device, method of producing the same, and method of fabricating stacked-type semiconductor device - A carrier structure for fabricating a stacked-type semiconductor device includes: a lower carrier that has laminated thin plates and has first openings for mounting first semiconductor packages thereon; and an upper carrier having second openings for mounting second semiconductor packages on the first semiconductor packages. The lower carrier composed of the laminated thin plates realizes an even plate thickness and reduces warps because stress is distributed to the thin plates. This results in an improved production yield. A pattern of the openings in the thin plates of the lower carrier may be formed by etching or electric discharging. The openings thus formed have reduced warps and burrs. | 2009-04-09 |
20090093086 | LEAD FORMING APPARATUS AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A lead forming apparatus has a function of bending leads of a semiconductor device having leads into a gull wing shape. The lead forming apparatus includes: a lead bending die, as a lower die, allowing thereon placement of the semiconductor device and accepting the leads in the bending leads; a lead bending punch, as an upper die, descending towards the lead bending die so as to move the leads of the semiconductor device towards the lead bending die, to thereby bend the leads into a gull wing shape; and a first stopper specifying the bottom dead center of the lead bending punch, so as to ensure a distance not smaller than thickness of the leads between the bottom surface of the lead bending punch and the top surface of a portion, allowing thereon placement of the leads, of the lead bending die. | 2009-04-09 |
20090093087 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In the method of manufacturing a semiconductor device that semiconductor chips are mounted facing-up on the printed wiring board on which a protective insulation film is formed by means of a film-like resist and a plurality of the semiconductor chips are collectively molded by a transfer mold technology, when transfer molding is performed, among the adsorption face of the printed wiring board and the lower die to make adsorb the printed wiring board, the through holes reaching the exterior space of the lower die from the vicinity of the end portion opposing the gate to pour mold resin of a mold cavity are formed as many as possible in order to prevent a short circuit and an open circuit by big deformation of a bonding wire connecting an electrode of the semiconductor chip and an conductor pattern of the printed wiring board. | 2009-04-09 |
20090093088 | ROLL-ON ENCAPSULATION METHOD FOR SEMICONDUCTOR PACKAGES - A low-viscosity resin is deposited using an apparatus with a movable and heatable wheel and a heater stage. A tape is provided, which includes a layer ( | 2009-04-09 |
20090093089 | METHOD FOR FABRICATING HEAT DISSIPATING SEMICONDUCTOR PACKAGE - A heat dissipating semiconductor package and a fabrication method thereof are provided. A semiconductor chip is mounted on a chip carrier. A heat sink is mounted on the chip, and includes an insulating core layer, a thin metallic layer formed on each of an upper surface and a lower surface of the insulating core layer and a thermal via hole formed in the insulating core layer. A molding process is performed to encapsulate the chip and the heat sink with an encapsulant to form a package unit. A singulation process is performed to peripherally cut the package unit. A part of the encapsulant above the thin metallic layer on the upper surface of the heat sink is removed, such that the thin metallic layer on the upper surface of the heat sink is exposed, and heat generated by the chip can be dissipated through the heat sink. | 2009-04-09 |
20090093090 | METHOD FOR PRODUCING A POWER SEMICONDUCTOR MODULE COMPRISING SURFACE-MOUNTABLE FLAT EXTERNAL CONTACTS - A method for producing a power semiconductor module having surface mountable flat external contact areas is disclosed. At least one power semiconductor chip is fixed by its rear side on a drain external contact. An insulation layer covers the top side over the side edges of the semiconductor chip as far as the inner housing plane was a leaving free the source and gate contact areas on the top side of the semiconductor chip and also was partly leaving free the top sides of the corresponding external contacts. | 2009-04-09 |
20090093091 | Method of fabricating semiconductor package - A semiconductor package of this invention achieves higher wiring densities and increases the degree of freedom of the wiring design. The semiconductor package includes a first substrate having first and second faces, and first wiring provided on the first face of the first substrate. The semiconductor package also includes a second substrate having first and second faces, and second wiring provided on the first face of the second substrate. The semiconductor package also includes a semiconductor chip connected to the first and second wiring. The first face of the first substrate faces the first face of the second substrate, and the first and second wiring intersect one another in three dimensions in an isolated state. | 2009-04-09 |
20090093092 | SOI SUBSTRATE CONTACT WITH EXTENDED SILICIDE AREA - A low resistance contact structure and method of making the structure. The structure includes a polysilicon contact through an upper silicon layer and buried oxide layer to a lower silicon layer of a silicon-on-insulation substrate. A region of the upper silicon layer surrounds the polysilicon contact and top surface of the polysilicon contact and surrounding region of upper silicon layer are metal silicided providing an extended contact area greater than the area of the top surface of polysilicon contact. | 2009-04-09 |
20090093093 | METHOD OF FABRICATING THIN FILM TRANSISTOR - A method for fabricating a thin film transistor (TFT) is provided. A substrate having a gate, a dielectric layer, a channel layer and an ohmic contact layer formed thereon is provided. Next, a metal layer is formed over the substrate covering the ohmic contact layer. Next, the metal layer and the ohmic contact layer are simultaneously etched by a wet etching process to form a source/drain and expose the channel layer. Because the wet etching process can be used to selectively etch the ohmic contact layer, damage to the underlying channel layer may be negligible. Thus, the reliability of the device may be promoted. Furthermore, the process may be simplified, the production yield and the throughput of TFT may be increased. | 2009-04-09 |
20090093094 | Selective Formation of Silicon Carbon Epitaxial Layer - Methods for formation of epitaxial layers containing n-doped silicon are disclosed, including methods for the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. Formation of the n-doped epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source, a carbon source and an n-dopant source at a first temperature and pressure and then exposing the substrate to an etchant at a second higher temperature and a higher pressure than during deposition. | 2009-04-09 |
20090093095 | METHOD TO IMPROVE TRANSISTOR TOX USING SI RECESSING WITH NO ADDITIONAL MASKING STEPS - A method of forming a transistor device is provided wherein a gate structure is formed over a semiconductor body of a first conductivity type. The gate structure is formed comprising a protective cap thereover and defining source/drain regions laterally adjacent thereto. A first implant is performed of a second conductivity type into both the gate structure and the source/drain regions. The semiconductor body is etched to form recesses substantially aligned to the gate structure wherein the first implant is removed from the source/drain regions. Source/drain regions are implanted or grown by a selective epitaxial growth. | 2009-04-09 |
20090093096 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a nonvolatile memory having an excellent data holding property and a technique for manufacturing the memory, a polycrystalline silicon film | 2009-04-09 |
20090093097 | Method for Manufacturing Dual Gate in Semiconductor Device - Provided is a method for manufacturing a dual gate in a semiconductor device. The method includes forming a gate insulating layer and a gate conductive layer on a semiconductor substrate, forming a diffusion barrier layer on the gate conductive layer, forming a barrier metal layer on the diffusion barrier layer, depositing a first gate metal layer on the barrier metal layer, forming a metal nitride barrier layer on a surface of the first gate metal layer by supplying nitrogen (N2) plasma on the first gate metal layer, forming a second gate metal layer on the metal nitride barrier layer, and forming a hard mask layer on the second gate metal layer. | 2009-04-09 |
20090093098 | Manufacturing method of semiconductor device having trench isolation - A manufacturing method of semiconductor device includes: forming a nitride film above a silicon substrate including a first region and a second region which respectively correspond to an outside of a memory cell region and the memory cell region; forming trenches reaching from the nitride film to the silicon substrate; retreating the nitride film such that widths of the trenches at the nitride film become wider; forming a buried oxide film to be buried in the trenches after the retreating; polishing the buried oxide film with the nitride film being used as a stopper; removing the nitride film after the polishing; implanting impurity after the removing; forming gate electrodes after the implanting; and implanting impurity after the forming the gate electrodes. | 2009-04-09 |
20090093099 | Layout method and layout apparatus for semiconductor integrated circuit - In a layout method for a semiconductor integrated circuit by using cell library data, a plurality of cell patterns are arranged in a first direction. One of gate patterns in one of the plurality of cell patterns is specified as a reference gate pattern. An additional cell pattern is arranged in a second direction orthogonal to the first direction such that a number of gate patterns within a predetermined area containing the reference gate pattern satisfies a constraint condition. | 2009-04-09 |
20090093100 | METHOD FOR FORMING AN AIR GAP IN MULTILEVEL INTERCONNECT STRUCTURE - The present invention generally provides a method for forming multilevel interconnect structures, including multilevel interconnect structures that include an air gap. One embodiment provides a method for forming conductive lines in a semiconductor structure comprising forming trenches in a first dielectric layer, wherein air gaps are to be formed in the first dielectric layer, depositing a conformal dielectric barrier film in the trenches, wherein the conformal dielectric barrier film comprises a low k dielectric material configured to serve as a barrier against a wet etching chemistry used in forming the air gaps in the first dielectric layer, depositing a metallic diffusion barrier film over the conformal low k dielectric layer, and depositing a conductive material to fill the trenches. | 2009-04-09 |
20090093101 | Method for Manufacturing a Transistor of a Semiconductor Memory Device - A transistor of a semiconductor memory device including a semiconductor substrate having a plurality of active regions and a device isolation region, a plurality of first and second trench device isolation layers, which are arranged alternately with each other on the device isolation region of the semiconductor substrate, the first trench device isolation layers having a first thickness corresponding to a relatively high step height, and the second trench device isolation layers having a second thickness corresponding to a relatively low step height, a recess region formed in each of the active regions by a predetermined depth to have a stepped profile at a boundary portion thereof, the recess region having a height higher than that of the second trench device isolation layers to have an upwardly protruded portion between adjacent two second trench device isolation layers, a gate insulation layer, and a plurality of gate stacks formed on the gate insulation layer to overlap with the stepped profile of the respective active regions and the protruded portion of the relevant recess region. | 2009-04-09 |
20090093102 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - When a single crystal semiconductor layer is bonded to a base substrate, a silicon oxide film is preferably used for one or both of the base substrate and a single crystal semiconductor substrate. According to this structure, an SOI layer having a strong bonding strength in a bonding portion can be obtained even when a substrate having an upper temperature limit of 700° C. or lower such as a glass substrate is used. In addition, a single crystal semiconductor substrate from which the single crystal semiconductor layer has been separated is reprocessed in such a manner that the single crystal semiconductor substrate is irradiated with laser light from the separation surface side of the single crystal semiconductor substrate, to melt the surface of the single crystal semiconductor substrate during the melting time per area of 0.5 microseconds to 1 millisecond. Then, the reprocessed single crystal semiconductor substrate is reused. | 2009-04-09 |
20090093103 | Method and device for controlled cleaving process - A technique for forming a film of material ( | 2009-04-09 |
20090093104 | MANUFACTURING METHOD FOR SEMICONDUCTOR CHIPS - By forming dividing-groove portions in accordance with dividing regions on the second surface of a semiconductor wafer where an insulating film is placed in the dividing regions of the first surface and performing etching of the entire second surface and the surfaces of the dividing-groove portions by performing plasma etching from the second surface, corner portions on the second surface side are removed, while the insulating film is exposed from the etching bottom portion by removing the dividing-groove portions in the dividing regions. And by continuously performing the plasma etching in a state in which the exposed insulating film is surface charged with electric charge due to ions in plasma, corner portions on the first surface side put in contact with the insulating film are removed, and semiconductor chips that have a high transverse rupture strength are provided. | 2009-04-09 |
20090093105 | Particle deposition apparatus, particle deposition method, and manufacturing method of light-emitting device - To provide a (homogeneous) particle deposit without any impurity contamination, on which only particles with a desired size are deposited. A solution, with particles dispersed in a solvent, is jetted as a flow of fine liquid droplets from a tip part of a capillary, and the jetted fine liquid droplets are electrically charged. This flow of the droplets is introduced into a vacuum chamber through a jet nozzle, as a free jet flow. The free jet flow that travels in the vacuum chamber is introduced into an inside of a deposition chamber, inside of which is set at lower pressure, through a skimmer nozzle provided in the deposition chamber, as an ion beam. Subsequently, by an energy separation device, only particles having particular energy are selected from the electrically charged particles in the flow, and are deposited on a deposited body disposed in an inside of the deposition chamber. | 2009-04-09 |
20090093106 | BONDED SOI SUBSTRATE, AND METHOD FOR MANUFACTURING THE SAME - This bonded SOI substrate includes: an SOI layer having a low density impurity layer in which dopants are present at low density and a high density impurity layer in which dopants are present at high density; a wafer for a support substrate which supports said SOI layer; and a buried insulating film, wherein said SOI layer and said wafer for a support substrate are bonded with said buried insulating film therebetween, and gettering sites are formed in said high density impurity layer. | 2009-04-09 |
20090093107 | SEMICONDUCTOR SUBSTRATE CLEANING METHODS, AND METHODS OF MANUFACTURE USING SAME - In a cleaning composition, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device, the cleaning composition includes about 0.5 to about 5% by weight of an organic ammonium hydroxide compound, about 0.1 to about 3% by weight of a fluoride compound, about 0.1 to about 3% by weight of a buffering agent, about 0.5 to about 5% by weight of an etching accelerant, and a remainder of water. | 2009-04-09 |
20090093108 | SEMICONDUCTOR FABRICATION PROCESS INCLUDING SILICIDE STRINGER REMOVAL PROCESSING - A semiconductor fabrication process includes forming a gate electrode ( | 2009-04-09 |
20090093109 | Method for producing a semiconductor device using a solder alloy - In producing a semiconductor device, a solder alloy is prepared to contain antimony in a range of from 3 to 5 wt %, a trace amount of germanium, and a balance of tin. An insulative substrate having conductor patterns on both surfaces thereof is prepared, and a heat sink plate is mounted on a back surface of the insulative substrate by a soldering process using the solder alloy at a temperature ranging from 310 C.° to 320 C.° in a hydrogen reducing furnace. A semiconductor chip is mounted on a front surface of the insulative substrate. | 2009-04-09 |
20090093110 | BGA package having half-etched bonding pad and cut plating line and method of fabricating same - A ball grid array (BGA) package having a half-etched bonding pad and a cut plating line and a method of fabricating the same. In the BGA package, the plating line is cut to form a predetermined uneven bonding pad using half-etching, thereby increasing the contact area between the bonding pad and a solder ball. The BGA package includes a first external layer having a first circuit pattern and a wire bonding pad pattern wherein a chip is connected to a wire bonding pad using wire bonding. A second external layer includes a second circuit pattern, a cut plating line pattern, and a half-etched uneven solder ball pad pattern. In the second external layer, another chip is mounted on a solder ball pad. An insulating layer having a through hole interposed between the first and second external layers and electrically connects the first and second external layers therethrough. | 2009-04-09 |
20090093111 | SPROCKET OPENING ALIGNMENT PROCESS AND APPARATUS FOR MULTILAYER SOLDER DECAL - A process for aligning at least two layers in an abutting relationship with each other comprises forming a plurality of sprocket openings in each of the layers for receiving a sprocket of diminishing diameters as the sprocket extends outwardly from a base, with the center axes of the sprocket openings in each layer being substantially alignable with one another, the diameter of the sprocket openings in an abutting layer for first receiving the sprocket being greater than the diameter of the sprocket openings in an abutted layer. This is followed by forming a plurality of reservoir openings in each of at least two of the layers and positioning the sprocket openings in the layers to correspond with one another and the reservoir openings in the layers to correspond with one another so that substantial alignment of the center axes of the corresponding sprocket openings in the layers effects substantial alignment of the center axes of the corresponding reservoir openings in the layers. Engaging the sprocket openings with the sprocket by inserting the end of the sprocket having the smallest diameter into the sprocket openings having the largest diameter in the layers and continuing through to the sprocket opening having the smallest diameter in the layers effects substantial alignment of the center axes of the corresponding sprocket openings and substantial alignment of the center axes of the corresponding reservoir openings in the layers. The invention also comprises apparatus-for performing this process. | 2009-04-09 |
20090093112 | METHODS AND APPARATUS OF CREATING AIRGAP IN DIELECTRIC LAYERS FOR THE REDUCTION OF RC DELAY - A method and apparatus for generating air gaps in a dielectric material of an interconnect structure. One embodiment provides a method for forming a semiconductor structure comprising depositing a first dielectric layer on a substrate, forming trenches in the first dielectric layer, filling the trenches with a conductive material, planarizing the conductive material to expose the first dielectric layer, depositing a dielectric barrier film on the conductive material and exposed first dielectric layer, depositing a hard mask layer over the dielectric barrier film, forming a pattern in the dielectric barrier film and the hard mask layer to expose selected regions of the substrate, oxidizing at least a portion of the first dielectric layer in the selected region of the substrate, removing oxidized portion of the first dielectric layer to form reversed trenches around the conductive material, and forming air gaps in the reversed trenches while depositing a second dielectric material in the reversed trenches. | 2009-04-09 |
20090093113 | Electrochemical etching of through silicon vias - A process is disclosed to form through silicon vias in a silicon wafer. The method comprises, forming a dielectric layer on a silicon wafer, forming a masking layer using photolithography, etching the dielectric layer, and electrochemically etching a through silicon via in the silicon wafer. | 2009-04-09 |
20090093114 | METHOD OF FORMING A DUAL-DAMASCENE STRUCTURE USING AN UNDERLAYER - A method of forming a dual-damascene wire. The method includes forming a via opening in a dielectric layer, filling the via opening with a polymeric formation including at least about 6% by weight of solids of thermal acid generator; heating the polymeric underlayer to a temperature greater than room temperature but less than about 180° C.; lithographically forming a trench in the dielectric layer and filling the via opening and the trench with an electrical conductor, a top surface of the electrical conductor substantially co-planer with the top surface of the second dielectric capping layer. | 2009-04-09 |
20090093115 | METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE BY ANNEALING ALUMINUM AND COPPER LAYERS TOGETHER - A metal line is formed to realize an improved electrical conductivity over the conventional aluminum metal lines. The metal line of a semiconductor device is made by forming an interlayer dielectric having a metal line forming region on a semiconductor substrate. A diffusion barrier on the interlayer dielectric is formed which includes a surface of the metal line forming region. A nucleus formation prevention layer is formed on upper ends of sidewalls of the metal line forming region and on a portion of the diffusion barrier which is placed on an upper surface of the interlayer dielectric. A laminated metal layer made of an aluminum layer and a copper layer is formed to fill the metal line forming region. A portion of the laminated metal layer, the nucleus formation prevention layer and the diffusion barrier is removed to expose the interlayer dielectric. The laminated metal layer is annealed into an annealed metal layer. | 2009-04-09 |
20090093116 | Method for forming Zener Zap Diodes and Ohmic Contacts in the Same Integrated Circuit - A method for forming an ohmic contact and a zener zap diode in an integrated circuit includes forming a first contact opening in the insulating layer over a first diffusion region to expose the semiconductor substrate; forming a barrier metal layer on the insulating layer and in the first contact opening; forming a second contact opening in the barrier metal layer over a second diffusion region and the insulating layer to expose the semiconductor substrate; forming a third contact opening in the barrier metal layer and the insulating layer over a third diffusion region to expose the semiconductor substrate; forming an aluminum layer on the barrier metal layer and the insulating layer and in the first, second and third contact openings; and patterning the aluminum layer to form the ohmic contact over the first diffusion region and the zener zap diode over the second and third diffusion regions. | 2009-04-09 |