14th week of 2012 patent applcation highlights part 11 |
Patent application number | Title | Published |
20120080640 | THERMALLY CONDUCTIVE RESIN COMPOSITION - Thermally conductive resin compositions comprising polymer, calcium fluoride, fibrous filler and optionally, polymeric toughening agent are particularly useful for metal/polymer hybrid parts and as encapsulants. | 2012-04-05 |
20120080641 | FORMULATIONS FOR USE IN SULFUR SCALE CONTROL IN INDUSTRIAL WATER SYSTEMS - Formulations of the present invention contain compounds of Formula (I) that are used as Sulfur Scale Inhibition and/or Removal Agents in the treatment of Industrial Water Systems. | 2012-04-05 |
20120080642 | Process For Preparing Alloy Composite Negative Electrode Material for Lithium Ion Batteries - The present invention relates to a process for preparing an alloy composite negative electrode material having a spherical carbon matrix structure for lithium ion batteries by spray-drying carbothermal reduction. The invention covers a process for preparing a negative electrode material for a lithium ion battery with a general formula A-M/Carbon, wherein A is a metal selected from the group consisting of Si, Sn, Sb, Ge and Al; and wherein M is different from A and is at least one element selected from the group consisting of B, Cr, Nb, Cu, Zr, Ag, Ni, Zn, Fe, Co, Mn, Sb, Zn, Ca, Mg, V, Ti, In, Al, Ge; and comprising the steps of: —providing a solution comprising an organic polymer and either chemically reducible nanometric A- and M-precursor compounds, or nanometric Si and a chemically reducible M-precursor compound, when said metal A is Si; —spray-drying said solution whereby a A- and M-precursor bearing polymer powder is obtained, and—calcining said powder in a neutral atmosphere at a temperature between 500 and 1000° C. for 3 to 10 hours whereby, in this carbothermal reduction, a carbon matrix is obtained bearing homogeneously distributed A-M alloy particles. | 2012-04-05 |
20120080643 | ADDITIVES FOR INHIBITING GAS HYDRATE FORMATION - The invention relates to the use of polymers, containing between 1 and 100 mol % of structural units of the formula (1), | 2012-04-05 |
20120080644 | PROCESS, ABSORPTION MEDIUM, AND APPARATUS FOR ABSORPTION OF CO2 FROM GAS MIXTURES | 2012-04-05 |
20120080645 | Suppression Of Crystal Growth Instabilities During Production Of Rare-Earth Oxyorthosilicate Crystals - Disclosed are a method of growing a rare-earth oxyorthosilicate crystal and a crystal grown using the method. A melt is prepared by melting a first substance including at least one rare-earth element and a second substance including at least one element from group 7 of the periodic table. A seed crystal is brought into contact with the surface of the melt and withdrawn to grow the crystal. | 2012-04-05 |
20120080646 | LUMINESCENT SYSTEMS BASED ON THE ISOLATION OF CONJUGATED PI SYSTEMS AND EDGE CHARGE COMPENSATION WITH POLAR MOLECULES ON A CHARGED NANOSTRUCTURED SURFACE - A photoluminescent or electroluminescent system and method of making a non-luminescent nanostructured material into such a luminescent system is presented. The method of preparing the luminescent system, generally, comprises the steps of modifying the surface of a nanostructured material to create isolated regions to act as luminescent centers and to create a charge imbalance on the surface; applying more than one polar molecule to the charged surface of the nanostructured material; and orienting the polar molecules to compensate for the charge imbalance on the surface of the nanostructured material. The compensation of the surface charge imbalance by the polar molecules allows the isolated regions to exhibit luminescence. | 2012-04-05 |
20120080647 | METHOD AND SYSTEM FOR PRODUCING SYNTHETIC GAS FROM BIOMASS BY HIGH TEMPERATURE GASIFICATION - A method and a system for producing synthetic gas from biomass by high temperature gasification, including: feeding raw material, carbonizing, pulverizing the charcoal, and transporting charcoal powder to the gasification furnace for gasification. A heat source for the carbonizing is achieved by a direct combustion reaction between external combustible gas and external oxygen in a carbonization furnace. The heat emitted from the reaction being directly provided to the necessary heat of biomass pyrolysis, and yielding pyrolysis gas and charcoal from carbonization furnace. | 2012-04-05 |
20120080648 | ANODE MATERIALS FOR LITHIUM ION BATTERIES - A composite material has general Formula (1-x)J-(x)Q wherein: J is a metal carbon alloy of formula Sn | 2012-04-05 |
20120080649 | METHODS FOR PREPARING MATERIALS FOR LITHIUM ION BATTERIES - A process for preparing transition metal particles with a gradient in composition from the core of the particle to the outer layers. In particular, the process involves contacting a first transition metal solution with a second transition metal solution to form a transition metal source solution under specific process conditions. The transition metal particles with desired composition gradients are precipitated from the transition metal source solution. The transition metal particles may be combined with metals such as lithium to form cathode active metal oxides. | 2012-04-05 |
20120080650 | FISH TAPE LEADER WITH QUICK CHANGE COUPLING - A fish tape leader and coupling are disclosed wherein the coupling attaches to a fish tape using an adaptor that fits within the coupling and has a slot through which the fish tape can be inserted. Twisting the fish tape deforms the tape so that the tape cannot be pulled back through the adaptor and coupling. | 2012-04-05 |
20120080651 | METHOD FOR INSTALLING AN OPTICAL FIBRE UNIT IN A TUBE - A method for installing an optical fibre unit in a protective tube housing a pulling rope includes the steps of: providing a mini tube having a longitudinal opening from end to end; transversally inserting a portion of the pulling rope in the longitudinal opening; contacting the pulling rope and optical fibre unit over a predetermined length; slipping the mini tube over at least a portion of the contacting length of the pulling rope and optical fibre unit; crimping the mini tube around the pulling rope and optical fibre unit; and drawing the optical fibre unit through the protective tube by pulling the pulling rope. | 2012-04-05 |
20120080652 | LINE STORING YACHT WINCH WITH TENSION-APPLYING LEVEL WIND MECHANISM - A power winch for handling running rigging of a sailing yacht. The winch includes a drum for winding and storing the line as it is brought in and for controllably releasing line as it is let out. A novel level wind mechanism is provided for uniformly winding, storing, and releasing lines under operating conditions. During release of line, the line is positively drawn from the unwinding winch drum by the level wind mechanism. The arrangement enables lines to be released from and retrieved by a winch, as when tacking or resetting sails, as well as when hoisting, lowering, furling or unfurling of sails, with no line handling by crew members, with resulting improvement in the safety and convenience. A novel form of primary clutch is also provided to enable the winch to convert easily from power to manual operation, in case of malfunction of the power system. | 2012-04-05 |
20120080653 | MULTIPLE AXLE LIFT SYSTEM AND METHOD - A multiple axle lift system having a column mechanism and a carriage assembly is provided. The column mechanism has a base member with a central support member extending therefrom. The carriage assembly is slidably connected to the column mechanism and includes a centerline, a first lift pad assembly with a first lift pad for engaging a vehicle tire and a second lift pad assembly with a second lift pad for engaging a vehicle tire. The first and second lift pads are configured to face away from the centerline. | 2012-04-05 |
20120080654 | Visual highlight accessory for highway guardrails - A visual highlight accessory for attachment to highway guardrails has a paint coating and a clear varnish overcoating with mica particles for making the visual highlight accessory and the guardrail on which the visual highlight accessory is mounted readily visible to persons in vehicles travelling along a highway along which the visual highlight accessory borders. The visual highlight accessory has orifices corresponding to orifices in the guardrails to facilitate mounting of the visual highlight accessory on a guardrail. | 2012-04-05 |
20120080655 | SAFETY HAND RAIL - A temporary safety railing system includes a plurality of upright support structures. Each support structure includes a base member configured for temporary attachment to a support surface, an upright member attached to the base member and a plurality of C-shaped mounting brackets rotatably attached to each upright member on the same side thereof in a longitudinally spaced relationship with an upper mounting bracket positioned proximate a top end of each upright member and a lower mounting bracket positioned a distance below the upper mounting bracket. A plurality of wood upper railing members are attached to the upper mounting brackets and lower railing members are attached to the lower mounting brackets. The upper and lower railing members span a distance between adjacent support structures. | 2012-04-05 |
20120080656 | Graphene oxide memory devices and method of fabricating the same - A graphene oxide memory device includes a substrate, a lower electrode disposed on the substrate, an electron channel layer disposed on the lower electrode by using a graphene oxide, and an upper electrode disposed on the electron channel layer. | 2012-04-05 |
20120080657 | LOW OPERATIONAL CURRENT PHASE CHANGE MEMORY STRUCTURES - Memory cells described herein have an increased current density at lateral edges of the active region compared to that of conventional mushroom-type memory cells, resulting in improved operational current efficiency. As a result, the amount of heat generated within the lateral edges per unit value of current is increased relative to that of conventional mushroom-type memory cells. Therefore, the amount of current needed to induce phase change is reduced. | 2012-04-05 |
20120080658 | Graphene electronic device and method of fabricating the same - A graphene electronic device and a method of fabricating the graphene electronic device are provided. The graphene electronic device may include a graphene channel layer formed on a hydrophobic polymer layer, and a passivation layer formed on the graphene channel layer. The hydrophobic polymer layer may prevent or reduce adsorption of impurities to transferred graphene, and a passivation layer may also prevent or reduce adsorption of impurities to a heat-treated graphene channel layer. | 2012-04-05 |
20120080659 | NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE - In the nitride based semiconductor optical device, the strained well layers extend along a reference plane tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. A gallium nitride based semiconductor layer is adjacent to a light-emitting layer with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer and the gallium nitride based semiconductor layer. | 2012-04-05 |
20120080660 | LIGHT EMITTING DIODE AND LIGHT EMITTING DEVICE PACKAGE INCLUDING THE SAME - A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same direction. The active layer includes well and barrier layers alternately stacked at least one time. The well layer has a narrower energy bandgap than the barrier layer. The light emitting diode also includes a mask layer disposed in the first-conductivity-type semiconductor layer, a first electrode disposed on the first-conductivity-type semiconductor layer, and a second electrode disposed on the second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer is formed with at least one recess portion. | 2012-04-05 |
20120080661 | GRAPHENE INTERCONNECTION AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a graphene interconnection includes an insulating film, a catalyst film, and a graphene layer. An insulating film includes an interconnection trench. A catalyst film is formed in the interconnection trench and filling at least a portion of the interconnection trench. A graphene layer is formed on the catalyst film in the interconnection trench, and including graphene sheets stacked in a direction perpendicularly to a bottom surface of the interconnection trench. | 2012-04-05 |
20120080662 | GRAPHENE INTERCONNECTION AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a graphene interconnection includes a first insulating film, a first catalyst film, and a first graphene layer. A first insulating film includes an interconnection trench. A first catalyst film is formed on the first insulating film on both side surfaces of the interconnection trench. A first graphene layer is formed on the first catalyst film on the both side surfaces of the interconnection trench, and including graphene sheets stacked in a direction perpendicularly to the both side surfaces. | 2012-04-05 |
20120080663 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - An organic light-emitting display device and a method of manufacturing the organic light-emitting display device are disclosed. The organic light-emitting display device includes a bottom capacitor electrode that is formed over the same plane as an active layer of a thin film transistor and includes a semiconductor doped with ion impurities, a pixel electrode, and a top capacitor electrode formed over the same plane as a gate electrode, wherein a contact hole entirely exposing the pixel electrode and the top capacitor electrode is formed. | 2012-04-05 |
20120080664 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display apparatus and method of manufacturing the organic light emitting display apparatus including a lower substrate having power lines in a non-display region that is outside a display region whereon an image is realized; and a functional layer formed between the power lines and an encapsulation substrate. | 2012-04-05 |
20120080665 | Ferro-Electric Device and Modulatable Injection Barrier - Described is a modulatable injection barrier and a semiconductor element comprising same. More particularly, the invention relates to a two-terminal, non-volatile programmable resistor. Such a resistor can be applied in non-volatile memory devices, and as an active switch e.g. in displays. The device comprises, in between electrode layers, a storage layer comprising a blend of a ferro-electric material and a semiconductor material. Preferably both materials in the blend are polymers. | 2012-04-05 |
20120080666 | COMPOSITION, FILM USING THE COMPOSITION, CHARGE TRANSPORT LAYER, ORGANIC ELECTROLUMINESCENCE DEVICE, AND METHOD FOR FORMING CHARGE TRANSPORT LAYER - A composition includes: (B) an arylamine derivative having at least one polymerizable group; and (A) a cyano group-free azo based polymerization initiator. | 2012-04-05 |
20120080667 | COMPOSITE MATERIAL, LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE - A composite material including an organic compound and an inorganic compound and having a high carrier-transport property is provided. A composite material having a high carrier-injection property to an organic compound is provided. A composite material in which light absorption due to charge transfer interaction is unlikely to occur is provided. A light-emitting element having high emission efficiency is provided by including the composite material. A light-emitting element having a low drive voltage is provided. A light-emitting element having a long lifetime is provided. A composite material including a heterocyclic compound having a dibenzothiophene skeleton or a dibenzofuran skeleton and an inorganic compound exhibiting an electron-accepting property with respect to the heterocyclic compound is provided. | 2012-04-05 |
20120080668 | ORGANIC EL LIGHTING DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic EL lighting device includes a first electrode which is formed corresponding to each of the plurality of light-emitting portions on a substrate, an organic functional layer which is formed at least in a light-emitting area, a second electrode which is formed at least on the organic functional layer, and a conductive/light-scattering layer as a layer which has a conductive property and a light-scattering property, is formed on the second electrode, and is electrically connected to the second electrode. The conductive/light-scattering layer is formed of a conductive resin binder in which fine particles as transparent conductive fine particles are dispersed. | 2012-04-05 |
20120080669 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting element having an organic compound, which can be extended its longevity is provided. According to the present invention, there is provided a constitution in which, in order to protect a light emitting element from moisture, an inorganic insulating film | 2012-04-05 |
20120080670 | COMPOUND CONTAINING A 5-MEMBERED HETEROCYCLE AND ORGANIC LIGHT-EMITTING DIODE USING SAME, AND TERMINAL FOR SAME - Disclosed are a novel-structural compound including a 5-membered heterocycle, an organic electronic device using the same, and a terminal thereof. | 2012-04-05 |
20120080671 | ORGANIC EL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - An organic EL display device ( | 2012-04-05 |
20120080672 | TWO-PHOTON-ABSORPTION-BASED SILICON WAVEGUIDE PHOTO-POWER MONITOR - Instead of monitoring the optical power coming out of a waveguide, a direct method of monitoring the optical power inside the waveguide without affecting device or system performance is provided. A waveguide comprises a p-i-n structure which induces a TPA-generated current and may be enhanced with reverse biasing the diode. The TPA current may be measured directly by probing metal contacts provided on the top surface of the waveguide, and may enable wafer-level testing. The p-i-n structures may be implemented at desired points throughout an integrated network, and thus allows probing of different devices for in-situ power monitor and failure analysis. | 2012-04-05 |
20120080673 | Crack Stop Barrier and Method of Manufacturing Thereof - A wafer is disclosed. The wafer comprises a plurality of chips and a plurality of kerfs. A kerf of the plurality of kerfs separates one chip from another chip. The kerf comprises a crack stop barrier. | 2012-04-05 |
20120080674 | LED PACKAGE - According to one embodiment, an LED package includes first and second lead frames spaced from each other, and an LED chip. Each of the first and second lead frames includes a base portion and a plurality of extending portions extending from the base portion. A part of a lower surface of the base portion, side surfaces of the base portion, lower surfaces of the extending portions and side surfaces of the extending portions are covered by resin. A remaining part of the lower surface of the base portion and tip surfaces of the extending portions are not covered by resin. The part of the lower surface of the base portion includes a first edge of the first lead frame and a second edge of the second lead frame. The first edge and the second edge are opposed each other. | 2012-04-05 |
20120080675 | PHOTOELECTRIC CONVERTER, METHOD OF MANUFACTURING PHOTOELECTRIC CONVERTER AND IMAGING DEVICE - A photoelectric converter includes a pair of electrodes and a plurality of organic layers. The pair of electrodes is provided above a substrate. The plurality of organic layers is interposed between the pair of electrodes and includes a photoelectric conversion layer and a given organic layer being formed on one electrode of the pair of electrodes. The one electrode is one of pixel electrodes arranged two-dimensionally. The given organic layer has a concave portion that is formed in a corresponding position located above a step portion among the arranged pixel electrodes. An angle θ of the concave portion is less than 50°, where an inclination angle of a tangent plane at a given point on the concave portion to a surface plane of the substrate is defined as θ. | 2012-04-05 |
20120080676 | Backside nanoscale texturing to improve IR response of silicon solar cells and photodetectors - The absorption coefficient of silicon for infrared light is very low and most solar cells absorb very little of the infrared light energy in sunlight. Very thick cells of crystalline silicon can be used to increase the absorption of infrared light energy but the cost of thick crystalline cells is prohibitive. The present invention relates to the use of less expensive microcrystalline silicon solar cells and the use of backside texturing with diffusive scattering to give a very large increase in the absorption of infrared light. Backside texturing with diffusive scattering and with a smooth front surface of the solar cell results in multiple internal reflections, light trapping, and a large enhancement of the absorption of infrared solar energy. | 2012-04-05 |
20120080677 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A manufacturing method of a thin film transistor array panel includes forming a gate line including a gate electrode on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor layer on the gate insulating layer; forming a data line including a data conductive layer pattern on the semiconductor layer and crossing the gate line; forming a planarization layer on the data conductive layer pattern; dry-etching the planarization layer to expose a portion of the data conductive layer pattern overlapping the gate electrode; wet-etching the exposed data conductive layer pattern; and exposing a portion of the semiconductor layer overlapping the gate electrode. | 2012-04-05 |
20120080678 | COMPOSITIONS FOR SOLUTION PROCESS, ELECTRONIC DEVICES FABRICATED USING THE SAME, AND FABRICATION METHODS THEREOF - Exemplary embodiments provide compositions for a solution process, electronic devices fabricated using the same, and fabrication methods thereof An oxide nano-structure is formed using a sol-gel process. An oxide thin film transistor is formed using the oxide nano-structure. | 2012-04-05 |
20120080679 | ALKYLSILANE LAMINATE, PRODUCTION METHOD THEREOF AND THIN-FILM TRANSISTOR - Provided is an alkylsilane laminate with which it is possible to obtain an organic semiconductor film having excellent semiconductor properties. Such a laminate can be useful for an organic thin-film transistor. The alkylsilane laminate comprises an underlayer (Sub) having hydroxyl groups at the surface and an alkylsilane thin film (AS) formed on this underlayer. The alkylsilane laminate is a laminate wherein the critical surface energy Ec of the alkylsilane thin film and the number of carbons (X) of the alkylsilane satisfies the following formula (1): Ec≦29.00−0.63 | 2012-04-05 |
20120080680 | Organic light emitting display device - An organic light emitting display device includes a substrate, a plurality of unit pixels on the substrate, each unit pixel including a first region that emits light and a second region that transmits external light, thin film transistors (TFTs) disposed in the first region of each unit pixel, first electrodes disposed in the first region of each unit pixel, each first electrode being electrically connected to one of the TFTs, a second electrode facing the first electrodes, and commonly disposed in the unit pixels, and an organic layer interposed between the first electrodes and the second electrode, and including an emissive layer. With respect to two adjacent pixels of the plurality of unit pixels, the first region and the second region in one unit pixel are symmetrical with the first region and the second region in another adjacent unit pixel, and the second regions are connected to each other. | 2012-04-05 |
20120080681 | THIN FILM TRANSISTOR AND ORGANIC LIGHT-EMITTING DISPLAY - A thin film transistor including: a substrate; an active layer formed over the substrate; a gate insulating layer formed over the active layer; a gate electrode formed over the gate insulating layer; an interlayer insulating layer formed over the gate electrode; and source and drain electrodes that contact the active layer via the interlayer insulating layer. The source and drain electrodes may have a structure including an aluminum (Al) layer, an aluminum-nickel alloy (AlNiX) layer, and an indium tin oxide (ITO) layer, which are sequentially stacked. | 2012-04-05 |
20120080682 | METHOD FOR PRODUCING DISPLAY DEVICE - In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surface thereof. A surface of the first substrate that the electrical wirings are formed is opposite to the transparent conductive film on the second substrate. Also, in a liquid crystal display device, a first substrate includes a matrix circuit and a peripheral driver circuit, and a second substrate is opposite to the first substrate. Spacers are provided between the first and second substrates. A seal material is formed outside the matrix circuits and the peripheral driver circuits in the first and second substrates. A protective film is formed on the peripheral driver circuit has substantially a thickness equivalent to an interval between the substrates which is formed by the spacers. | 2012-04-05 |
20120080683 | THIN FILM TRANSITOR, DISPLAY DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE - A thin film transistor, a display device and a liquid crystal display device are provided. The thin film transistor includes a gate electrode film onto which light from a light source is irradiated, a semiconductor film formed on the gate electrode film and on an opposite side to the light source side through an insulating film, first and second electrode films formed to be in electrical contact with the semiconductor film, and a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film, wherein the first shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction. | 2012-04-05 |
20120080684 | THIN FILM TRANSISTOR AND FLAT PANEL DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor (TFT) and a flat panel display device including the same. The TFT includes a substrate, a gate electrode formed over the substrate, the gate electrode formed with silicon doped with impurities, a gate wiring connected to the gate electrode, an active layer formed over the gate electrode, and source and drain electrodes connected to the active layer. According to such a structure, since heat flow to the gate electrode during crystallization of the active layer may be prevented, stable crystallization of the active layer may be performed, and thus an error rate of a product may be decreased. | 2012-04-05 |
20120080685 | Semiconductor Device and Method of Fabricating the Same - An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together; and a pixel electrode connected to the semiconductor layer. | 2012-04-05 |
20120080686 | Semiconductor Devices and Methods of Manufacturing Thereof - In one embodiment, a method of forming a semiconductor device includes forming a first porous semiconductor layer over a top surface of a substrate. A first epitaxial layer is formed over the first porous semiconductor layer. A circuitry is formed within and over the first epitaxial layer. The circuitry is formed without completely oxidizing the first epitaxial layer. | 2012-04-05 |
20120080687 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device of an embodiment includes: a nitride semiconductor device, including: a nitride semiconductor substrate; a first anode electrode formed on the substrate; a recess structure formed on the substrate of an outer peripheral portion of the first anode electrode by engraving the substrate; a second anode electrode formed so as to cover the first anode electrode and so as to be embedded in the recess structure; and a cathode electrode formed on the substrate. | 2012-04-05 |
20120080688 | ULTRA-THIN OHMIC CONTACTS FOR P-TYPE NITRIDE LIGHT EMITTING DEVICES - A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 Å. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode. | 2012-04-05 |
20120080689 | LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP, AND LIGHTING APPARATUS - A light-emitting diode having a high output, high efficiency, and a long service life under a high-humidity environment is provided. The light-emitting diode ( | 2012-04-05 |
20120080690 | Method for Manufacturing a Composite Wafer Having a Graphite Core, and Composite Wafer Having a Graphite Core - According to an embodiment, a composite wafer includes a carrier substrate having a graphite core and a monocrystalline semiconductor layer attached to the carrier substrate. | 2012-04-05 |
20120080691 | LIGHT EMITTING DIODE AND MAKING METHOD THEREOF - An LED includes a substrate, a first P-type semiconductor layer formed on the substrate and a plurality of LED dies arranged on the first P-type semiconductor layer. The LED dies are electrically connected to each other in series. The present invention also relates to a method for making such an LED. | 2012-04-05 |
20120080692 | DISPLAY PANEL, DISPLAY DEVICE, ILLUMINATION PANEL AND ILLUMINATION DEVICE, AND METHODS OF MANUFACTURING DISPLAY PANEL AND ILLUMINATION PANEL - Disclosed herein is a display panel including a mounting substrate in which one or more light-emitting devices each including one or more light-emitting elements are mounted on a circuit substrate; and a transparent substrate disposed to face the light-emitting device side of the mounting substrate, wherein the transparent substrate has a transparent base material and a resin layer formed on the mounting substrate side of the transparent base material, and the resin layer is in contact with the light-emitting device and has, formed on an upper surface or a side surface of the light-emitting device, an inclined part which spreads from the light-emitting device side toward the transparent base material side. | 2012-04-05 |
20120080693 | LIGHT EMITTING DIODE PACKAGE AND METHOD OF MAKING THE SAME - The light emitting diode package of the present invention uses photosensitive materials to form phosphor encapsulations or a phosphor layer, which can be fabricated by means of semiconductor processes in batch. Also, the concentration of phosphors in individual regions can be accurately and easily controlled by a laser printing process or by light-through holes. Accordingly, the optic effects of light emitting diode packages can be accurately adjusted. | 2012-04-05 |
20120080694 | ORGANIC EL DISPLAY - Disclosed is a coated type organic EL display wherein the light extraction efficiencies of all organic light-emitting elements are improved even when the organic light-emitting elements have different organic light-emitting layers for respective emission colors. Specifically disclosed is an organic EL display which comprises a substrate, a red organic light-emitting element (R), a green organic light-emitting element (G), and a blue organic light-emitting element (B), said organic light-emitting elements being arranged on the substrate. Each of the organic light-emitting elements has a pixel electrode that is a reflective electrode, a functional layer that is formed on the pixel electrode by coating, an organic light-emitting layer that is arranged on the functional layer, a counter electrode that is a transparent electrode arranged on the organic light-emitting layer, and a tapered bank that defines the functional layer formed by coating. The amounts of the functional layers formed by coating are different among the element (R), the element (G) and the element (B), and the tapered angles of the banks defining the functional layers are different among the element (R), the element (G) and the element (B). | 2012-04-05 |
20120080695 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors. | 2012-04-05 |
20120080696 | LIGHT EMITTING DIODE MODULE - An LED module includes a plurality of lighting sources each including a substrate, a first and second lead frames arranged on the substrate, an LED chip electrically connected to the first and the second lead frames, and an encapsulation covering the LED chip. The first lead frame of each of the lighting sources connects with the second lead frame of an adjacent lighting source electrically and mechanically. | 2012-04-05 |
20120080697 | LIGHT-EMITTING ELEMENT HAVING A PLURALITY OF CONTACT PARTS - A light-emitting element includes a supportive substrate; a reflective layer formed on the supportive substrate; a transparent layer formed on the reflective layer; a light-emitting stacked layer formed on the transparent layer; an etching-stop layer formed between the transparent layer and the reflective layer; and a plurality of contact parts formed between the light-emitting stacked layer and the transparent layer. | 2012-04-05 |
20120080698 | HIGH EFFICIENCY LIGHT EMITTING DIODES - The present disclosure relates to high efficiency light emitting diode devices and methods for fabricating the same. In accordance with one or more embodiments, a light emitting diode device includes a substrate having one or more recessed features formed on a surface thereof and one or more omni-directional reflectors formed to overlie the one or more recessed features. A light emitting diode layer is formed on the surface of the substrate to overlie the omni-directional reflector. The one or more omni-directional reflectors are adapted to efficiently reflect light. | 2012-04-05 |
20120080699 | LIGHTWEIGHT HEAT SINKS AND LED LAMPS EMPLOYING SAME - A heat sink comprises a heat sink body, a reflective layer disposed over the heat sink body that has reflectivity greater than 90% for light in the visible spectrum, and a light transmissive protective layer disposed over the reflective layer that is light transmissive for light in the visible spectrum. The heat sink body may comprise a structural heat sink body and a thermally conductive layer disposed over the structural heat sink body where the thermally conductive layer has higher thermal conductivity than the structural heat sink body and the reflective layer is disposed over the thermally conductive layer. A light emitting diode (LED)-based lamp comprises the aforesaid heat sink and an LED module secured with and in thermal communication with the heat sink. The LED-based lamp may have an A-line bulb configuration, or may comprise a directional lamp in which the heat sink defines a hollow light-collecting reflector. | 2012-04-05 |
20120080700 | LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode package comprises a substrate, a light emitting diode chip, an encapsulating layer and a transparent surrounding layer. The surrounding layer is disposed on the substrate and encompasses the encapsulating layer, wherein the hardness of the surrounding layer is greater than the encapsulating layer. A method for manufacturing the light emitting diode package is also provided. | 2012-04-05 |
20120080701 | LIGHT EMITTING DEVICE PACKAGE - A light emitting device package is provided. The light emitting device package comprises a package body comprising a first cavity, and a second cavity connected to the first cavity; a first lead electrode, at least a portion of which is disposed within the second cavity; a second lead electrode, at least a portion of which is disposed within the first cavity; a light emitting device disposed within the second cavity; a first wire disposed within the second cavity, the first wire electrically connecting the light emitting device to the first lead electrode; and a second wire electrically connecting the light emitting device to the second lead electrode. | 2012-04-05 |
20120080702 | Light Emitting Diode Package Structure and Manufacturing Method Thereof - In one aspect, an LED package structure comprises a fluorescent substrate, a first electrically conductive pattern, a second electrically conductive pattern, at least one electrically conductive element, and an LED chip. The fluorescent substrate has a first surface and a second surface opposite the first surface. The fluorescent substrate comprises a mixture of a fluorescent material and a glass material. The first electrically conductive pattern is disposed on the first surface. The second electrically conductive pattern is disposed on the second surface. The electrically conductive element passes through the fluorescent substrate and connects the first and second electrically conductive patterns. The LED chip is disposed on the second surface and has a light extraction surface that connects the second electrically conductive pattern. The LED chip is electrically coupled to the first electrically conductive pattern via the electrically conductive element. | 2012-04-05 |
20120080703 | Light Emitting Diode Package Structure and Manufacturing Method Thereof - An LED package structure comprises a substrate, a first electrically conductive pattern, a second electrically conductive pattern, at least one electrically conductive element, and an LED chip. The substrate has a first surface and a second surface opposite to the first surface. The first electrically conductive pattern is disposed on the first surface. The second electrically conductive pattern is disposed on the second surface. The at least one electrically conductive element traverses the fluorescent substrate and connects the first and second electrically conductive patterns. The LED chip is disposed on the second surface and has a light extraction surface that connects the second electrically conductive pattern. The LED chip is electrically coupled to the first electrically conductive pattern via the at least one electrically conductive element. | 2012-04-05 |
20120080704 | METHOD OF PROVIDING A PHOSPHOR WITH A PRECISELY CONTROLLED ELEMENT COMPOSITION, A PHOSPHOR PROVIDED BY THE SAME, A PHOSPHOR, AND A LIGHT EMITTING DEVICE COMPRISING THE SAID PHOSPHOR - A method of providing a phosphor with a precisely controlled element composition, a phosphor provided by the same, and a red phosphor represented by the [formula 1] are disclosed, in which | 2012-04-05 |
20120080705 | EPOXY RESIN COMPOSITION FOR OPTICAL SEMICONDUCTOR DEVICE, LEAD FRAME OBTAINED USING THE SAME FOR OPTICAL SEMICONDUCTOR DEVICE, AND OPTICAL SEMICONDUCTOR DEVICE - The present invention relates to an epoxy resin composition for an optical semiconductor device having an optical semiconductor element mounting region and having a reflector that surrounds at least a part of the region, the epoxy resin composition being an epoxy resin composition for forming the reflector, the epoxy resin composition including the following ingredients (A) to (D): (A) an epoxy resin; (B) a curing agent; (C) a white pigment; and (D) at least one antioxidant selected from the group consisting of hindered-phenol antioxidants, sulfide antioxidants and hindered-amine antioxidants. | 2012-04-05 |
20120080706 | CHIP PACKAGE AND METHOD FOR FORMING THE SAME - An embodiment of the invention provides a chip package which includes: a substrate having a surface; a reflective layer partially covering the surface of the substrate; an insulating layer formed on the surface of the substrate and the reflective layer; a conducting layer formed on the insulating layer, wherein at least a portion of a direct projection of the conducting layer on the surface does not overlap with a direct projection of the reflective layer on the surface, and the conducting layer does not electrically contact with the reflective layer; and a chip disposed on the surface of the chip, wherein the chip has at least an electrode electrically connected to the conducting layer. | 2012-04-05 |
20120080707 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - There is provided a semiconductor light emitting device and method of making the same, having a first conductivity type semiconductor layer; an active layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the active layer and including a plurality of holes; and a transparent electrode formed on the second conductivity type semiconductor layer. | 2012-04-05 |
20120080708 | PHOSPHOR, LIGHTING SYSTEM AND WHITE LIGHT EMITTING DIODE - The present invention provides a phosphor, a lighting system and a white light emitting diode. The phosphor comprises a compound represented by the formula (1) and Eu as an activator. aM | 2012-04-05 |
20120080709 | LIGHT EMITTING DEVICES HAVING ROUGHENED/REFLECTIVE CONTACTS AND METHODS OF FABRICATING SAME - Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided. | 2012-04-05 |
20120080710 | SURFACE LIGHT SOURCE DEVICE, LIGHTING DEVICE, AND BACKLIGHT DEVICE - A surface light source device is provided that has high light extraction efficiency and high mechanical strength and can suppress a change in color tone at different viewing angles. To that end, the surface light source device includes: an organic EL element including a luminescent layer; and a light-emitting surface structure layer that is disposed in contact with one of the surfaces of the organic EL element and defines a concave-convex structure on the surface on the device light-emitting surface side. The concave-convex structure includes a plurality of concave portions having oblique surfaces and flat portions disposed around the concave portions. The surface light source device further includes a diffusing member on which the light emitted from the luminescent layer is incident, the diffusing member allowing the incident light to pass therethrough or reflecting the incident light in a diffused manner. | 2012-04-05 |
20120080711 | Light emitting device - A light emitting device comprises a case having a space therein, the space defined by an inner bottom surface and an inner side surface of the case, a lead frame housed in the space, and having a bending portion bent along the inner side surface of the case, and a light emitting element electrically connected to the lead frame, wherein a rear surface of the bending portion is embedded in the case and a front surface of the bending portion is exposed from the inner side surface of the case so as to oppose the light emitting element, and wherein a projecting portion projected from the inner bottom surface and inclined to the inner side surface of the case is formed on the inner side surface of the case. | 2012-04-05 |
20120080712 | METHOD FOR PRODUCING COMPOUND SEMICONDUCTOR LIGHT-EMITING DEVICE - It is intended to provide a production method that enables at least one of improvement in transparency, reduction in sheet resistance, homogenization in planar distribution of sheet resistance, and reduction in contact resistance related to a contact layer regarding a transparent conductive oxide film included in a compound semiconductor light-emitting device. | 2012-04-05 |
20120080713 | LIGHT-EMITTING DEVICE AND LIGHTING DEVICE PROVIDED WITH THE SAME - A light-emitting device capable of ensuring an electric connection between a light-emitting element and an electrode without generating any problem in practical use, by both connecting methods with a solder and a connector, and a lighting device provided with the light-emitting device are provided. The light-emitting device according to the present invention has a plurality of LED chips, and a soldering electrode land and a connector connecting electrode land electrically connected to the chips, on a ceramic substrate. The soldering electrode land is formed of a first conductive material having a function to prevent diffusion to a solder, and the connector connecting electrode land is formed of a second conductive material having a function to prevent oxidation. | 2012-04-05 |
20120080714 | LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - The present invention provides a light-emitting device including a light-emitting element over a substrate, the light-emitting element is partitioned from an adjacent light-emitting element by a partition wall, the light-emitting element comprising a first electrode, a layer formed over the first electrode, a light-emitting layer formed over the layer and a second electrode formed over the light-emitting layer, the layer contains an inorganic compound, an organic compound and a halogen atom, the partition wall contains the inorganic compound and the organic compound, and the layer. The light-emitting device provides higher reliability and fewer defects. | 2012-04-05 |
20120080715 | SEMICONDUCTOR DEVICE - A structure of semiconductor device includes a first semiconductor layer; an intermediate layer on a surface of said first semiconductor layer; a second semiconductor layer on said intermediate layer, wherein said intermediate layer and said second semiconductor layer are integrated to a set of sub-structures; and a semiconductor light emitting device on said second semiconductor layer. | 2012-04-05 |
20120080716 | INITIAL-ON SCR DEVICE FOR ON-CHIP ESD PROTECTION - A semiconductor device for electrostatic discharge (ESD) protection comprises a silicon controlled rectifier (SCR) including a semiconductor substrate, a first well formed in the substrate, a second well formed in the substrate, a first p-type region formed in the first well to serve as an anode, and a first n-type region partially formed in the second well to serve as a cathode, a p-type metal-oxide-semiconductor (PMOS) transistor formed in the first well including a gate, a first diffused region and a second diffused region separated apart from the first diffused region, a second n-type region formed in the first well electrically connected to the first diffused region of the PMOS transistor, and a second p-type region formed in the substrate electrically connected to the second diffused region of the PMOS transistor. | 2012-04-05 |
20120080717 | BI-DIRECTIONAL BACK-TO-BACK STACKED SCR FOR HIGH-VOLTAGE PIN ESD PROTECTION, METHODS OF MANUFACTURE AND DESIGN STRUCTURES - Bi-directional back-to-back stacked SCRs for high-voltage pin ESD protection, methods of manufacture and design structures are provided. The device includes a symmetrical bi-directional back-to-back stacked silicon controlled rectifier (SCR). An anode of a first of the back-to-back stacked SCR is connected to an input. An anode of a second of the back-to-back stacked SCR is connected to ground. Cathodes of the first and second of the back-to-back stacked SCR are connected together. Each of the symmetrical bi-directional back-to-back SCRs include a pair of diodes directing current towards the cathodes which, upon application of a voltage, become reverse biased effectively and deactivating elements from one of the symmetrical bi-directional back-to-back SCRs while the diodes of another of the symmetrical bi-directional back-to-back SCRs direct current in the same direction as the reverse biased diodes. | 2012-04-05 |
20120080718 | SEMICONDUCTOR DEVICE - The present teachings provide a semiconductor device comprising: an IGBT element region, a diode element region and a boundary region provided between the IGBT element region and the diode element region are formed in one semiconductor substrate. The boundary region comprises a second conductivity type first diffusion region, a first conductivity type second diffusion region, and a second conductivity type third diffusion region. A first drift region of the IGBT element region contiguously contacts the first diffusion region of the boundary region, and a second drift region of the diode element region contiguously contacts the first diffusion region of the boundary region. A first body region of the IGBT element region contiguously contacts the second diffusion region of the boundary region, and a second body region of the diode element region contiguously contacts the second diffusion region of the boundary region. | 2012-04-05 |
20120080719 | APPARATUS WITH PHOTODIODE REGION IN MULTIPLE EPITAXIAL LAYERS - A CMOS image sensor includes a substrate including silicon, a silicon germanium (SiGe) epitaxial layer formed over the substrate, the SiGe epitaxial layer formed through epitaxial growth and doped with a predetermined concentration level of impurities, an undoped silicon epitaxial layer formed over the SiGe epitaxial layer by epitaxial growth, and a photodiode region formed from a top surface of the undoped silicon epitaxial layer to a predetermined depth in the SiGe epitaxial layer. | 2012-04-05 |
20120080720 | METHOD OF FORMING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of forming a semiconductor device comprises forming a control electrode over a portion of a semiconductor layer, forming recesses extending into the semiconductor layer on opposing sides of the control electrode, and forming doped regions in the semiconductor layer through the recesses. The doped regions form current electrode regions of the semiconductor device and each doped region extends into the semiconductor layer from at least a base of a recess. The method further comprises forming, after forming the doped regions, strained semiconductor regions in the recesses, wherein a junction between each doped region and the semiconductor layer is formed below an interface between a strained semiconductor region and the semiconductor layer. | 2012-04-05 |
20120080721 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING THE SAME - A semiconductor structure includes a recess disposed in a substrate, a non-doped epitaxial layer and a doped epitaxial layer. The non-doped epitaxial layer is disposed on the inner surface of the recess and substantially consists of Si and an epitaxial layer. The non-doped epitaxial layer has a sidewall and a bottom which together cover the inner surface. The bottom thickness is not greater than 120% of the sidewall thickness. The non-doped epitaxial layer and the doped epitaxial layer together fill up the recess. | 2012-04-05 |
20120080722 | METHOD FOR FORMING STRAINED SEMICONDUCTOR CHANNEL AND SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate; a SiGe relaxed layer on the semiconductor substrate; an NMOS transistor on the SiGe relaxed layer; and a PMOS transistor on the SiGe relaxed layer, in which the NMOS transistor includes a tensile strained epitaxial layer located on the SiGe relaxed layer or embedded in the SiGe relaxed layer; and the PMOS transistor includes a compressive strained epitaxial layer located on the SiGe relaxed layer or embedded in the SiGe relaxed layer. The loss of the strained semiconductor material can be avoided and meanwhile the stress in the channel can be better maintained. | 2012-04-05 |
20120080723 | FABRICATING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME METHOD - A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality of second gates in the second region of the substrate, such that the second gates are spaced apart from each other at a second pitch different from the first pitch, implanting an etch rate adjusting dopant into the second region to form implanted regions, while blocking the first region, forming a first trench by etching the first region between the plurality of first gates, and forming a second trench by etching the second region between the plurality of second gates. | 2012-04-05 |
20120080724 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor layer, a second semiconductor layer, a two-dimensional carrier gas layer, a first main electrode, a second main electrode, a first gate electrode, and a second gate electrode. The first gate electrode is provided between a part of the first main electrode and a part of the second main electrode opposite to the part of the first main electrode. The second gate electrode is provided between another part of the first main electrode and another part of the second main electrode opposite to the another part of the first main electrode with a separation region interposed between the first gate electrode and the second gate electrode. The second gate electrode is controlled independently of the first gate electrode. | 2012-04-05 |
20120080725 | VERTICAL TRANSISTOR MEMORY ARRAY - A method includes providing a semiconductor wafer having a plurality of pillar structures extending orthogonally from the semiconductor wafer. An electrically conducting interconnect element is deposited onto at least selected vertical pillar transistors and a non-volatile variable resistive memory cell is deposited onto the electrically conducting interconnect layer to form a vertical transistor memory array. | 2012-04-05 |
20120080726 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE - Disclosed herein is a solid-state imaging device including: a semiconductor layer including a photoelectric conversion section receiving incident light and generating a signal charge; and a light absorbing section for absorbing transmitted light transmitted by the photoelectric conversion section and having a longer wavelength than light absorbed by the photoelectric conversion section, the transmitted light being included in the incident light, the light absorbing section being disposed on a side of another surface of the semiconductor layer on an opposite side from one surface of the semiconductor layer, the incident light being made incident on the one surface of the semiconductor layer. | 2012-04-05 |
20120080727 | MICRO ELECTRO MECHANICAL DEVICE AND MANUFACTURING METHOD THEREOF - A micro structure and an electric circuit included in a micro electro mechanical device are manufactured over the same insulating surface in the same step. In the micro electro mechanical device, an electric circuit including a transistor and a micro structure are integrated over a substrate having an insulating surface. The micro structure includes a structural layer having the same stacked-layer structure as a layered product of a gate insulating layer of the transistor and a semiconductor layer provided over the gate insulating layer. That is, the structural layer includes layers formed of the same insulating film as the gate insulating layer and the same semiconductor film as the semiconductor layer of the transistor. Further, the micro structure is manufactured by using each of conductive layers used for a gate electrode, a source electrode, and a drain electrode of the transistor as a sacrificial layer. | 2012-04-05 |
20120080728 | SEMICONDUCTOR DEVICE WITH JUNCTION FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD OF THE SAME - A semiconductor device with a JFET is disclosed. The semiconductor device includes a trench and a contact embedded layer formed in the trench. A gate wire is connected to the contact embedded layer, so that the gate wire is connected to an embedded gate layer via the contact embedded layer. In this configuration, it is possible to downsize a contact structure between the embedded gate layer and the gate wire. | 2012-04-05 |
20120080729 | FIELD EFFECT TRANSISTOR - A lateral field-effect transistor capable of improving switching speed and reducing operationally defective products is provided. A gate wiring has a base, a plurality of fingers protruding from the base, and a connection connecting tips of adjacent fingers. The finger of the gate wiring is arranged between the finger of a source wiring and the finger of a drain wiring. The base of the gate wiring is arranged between the base of the source wiring and the fingers of the drain wiring and intersects with the fingers of the source wiring, with an insulating film interposed between the base of the gate wiring and the fingers. | 2012-04-05 |
20120080730 | SEMICONDUCTOR DEVICE WITH PHOTONICS - A semiconductor structure having a transistor region and an optical device region includes a transistor in a first semiconductor layer of the semiconductor structure, wherein the first semiconductor layer is over a first insulating layer, the first insulating layer is over a second semiconductor layer, and the second semiconductor layer is over a second insulating layer. A gate dielectric of the transistor is in physical contact with a top surface of the first semiconductor layer, and the transistor is formed in the transistor region of the semiconductor structure. A waveguide device in the optical device region and a third semiconductor layer over a portion of the second semiconductor layer. | 2012-04-05 |
20120080731 | PHOTODETECTOR ISOLATION IN IMAGE SENSORS - A first shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to a photodetector while a second shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to other electrical components in a pixel. The first and second shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer that is filled with a dielectric material. An isolation layer having the second conductivity is disposed only along a portion of a bottom and only along a sidewall of the trench immediately adjacent to the photodetector. The isolation layer is not disposed along the other portion of the bottom and along the other sidewall of the trench adjacent the photodetector. The isolation layer is not disposed along the bottom and sidewalls of the trench adjacent to the other electrical components. | 2012-04-05 |
20120080732 | ISOLATION STRUCTURES FOR GLOBAL SHUTTER IMAGER PIXEL, METHODS OF MANUFACTURE AND DESIGN STRUCTURES - Pixel sensor cells, e.g., CMOS optical imagers, methods of manufacturing and design structures are provided with isolation structures that prevent carrier drift to diffusion regions. The pixel sensor cell includes a photosensitive region and a gate adjacent to the photosensitive region. The pixel sensor cell further includes a diffusion region adjacent to the gate. The pixel sensor cell further includes an isolation region located below a channel region of the gate and about the photosensitive region, which prevents electrons collected in the photosensitive region to drift to the diffusion region. | 2012-04-05 |
20120080733 | PHOTODETECTOR ISOLATION IN IMAGE SENSORS - Shallow trench isolation regions are disposed in an n-type silicon semiconductor layer laterally adjacent to a collection region of a photodetector and laterally adjacent to a charge-to-voltage conversion region. The shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer and a first dielectric structure disposed along an interior bottom and sidewalls of each trench. A second dielectric structure is disposed over the pinning layer. The dielectric structures include a silicon nitride layer disposed over an oxide layer. An n-type isolation layer is disposed along only a portion of the exterior bottom of the trench and the exterior sidewall of the trench immediately adjacent to the photodetector. The n-type isolation layer is not disposed along the remaining portion of the bottom or the opposing exterior sidewall of the trench. | 2012-04-05 |
20120080734 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a memory cell portion and a peripheral circuit portion. The memory cell portion includes a pillar capacitor with a lower electrode, a dielectric film, and an upper electrode sequentially formed on a side surface of a first insulating portion which is parallel to a predetermined direction, and a transistor electrically connected to the lower electrode. The peripheral circuit portion includes a plate electrode, a cylinder capacitor with an upper electrode, a dielectric film, and a lower electrode sequentially formed on a side surface of the plate electrode which is parallel to the predetermined direction, and a transistor electrically connected to the lower electrode. | 2012-04-05 |
20120080735 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In the semiconductor device composing MOS transistor on which impurities are added from the surface of a P-type substrate, the region of immediate below a gate layer is the P-type substrate on which the impurities are not added, and first and second MOS devices, having an N-type diffusion layer are provided on the surface region of the P-type substrate circumscribing the gate layer. The gate layer of the first MOS device, and the N-type diffusion layer of the second MOS device are connected, and the N-type diffusion layer of the first MOS device and the gate layer of the second MOS device are connected, and thereby a first capacitive element is composed. | 2012-04-05 |
20120080736 | SEMICONDUCTOR DEVICE - An antifuse whose internal written information cannot be analyzed even by utilizing methods to determine whether there is a charge-up in the electrodes. The antifuse includes a gate insulation film, a gate electrode, and a first diffusion layer. A second diffusion layer is isolated from the first diffusion layer by way of a device isolator film, and is the same conduction type as the first diffusion layer. The gate wiring is formed as one integrated piece with the gate electrode, and extends over the device isolator film. A common contact couples the gate wiring to the second diffusion layer. The gate electrode is comprised of semiconductor material such as polysilicon that is doped with impurities of the same conduction type as the first diffusion layer. The second diffusion layer is coupled only to the common contact. | 2012-04-05 |
20120080737 | SEMICONDUCTOR DEVICE PROVIDED WITH A NON-VOLATILE MEMORY UNIT AND A MEMS SWITCH - According to one embodiment, a semiconductor device is provided. The semiconductor is provided with a MEMS switch element having a control terminal and a pair of signal terminals, and a non-volatile memory unit having first and second non-volatile semiconductor elements. The first non-volatile semiconductor element has a first source, a first drain and a first control gate terminal. The first drain is electrically connected to the control terminal of the MEMS switch element. The second non-volatile semiconductor element has a second source, a second drain and a second control gate terminal. The second drain gate terminal is electrically connected to the control terminal of the MEMS switch element. | 2012-04-05 |
20120080738 | SHALLOW TRENCH ISOLATION FOR A MEMORY - In some embodiments, a gate structure with a spacer on its side may be used as a mask to form self-aligned trenches in a microelectronic memory, such as a flash memory. A first portion of the gate structure may be used to form the mask, together with sidewall spacers, in some embodiments. Then, after forming the shallow trench isolations, a second portion of the gate structure may be added to form a mushroom shaped gate structure. | 2012-04-05 |
20120080739 | NONVOLATILE PROGRAMMABLE LOGIC SWITCH - A nonvolatile programmable logic switch according to an embodiment includes: a memory cell transistor including: a first source region and a first drain region of a second conductivity type formed at a distance from each other in a first semiconductor region of a first conductivity type; a first insulating film, a charge storage film, a second insulating film, and a control gate stacked in this order and formed on the first semiconductor region between the first source region and the first drain region; a pass transistor including: a second source region and a second drain region of a second conductivity type formed at a distance from each other in a second semiconductor region of the first conductivity type; a third insulating film, a gate electrode stacked in this order and formed on the second semiconductor region between the second source region and the second drain region, the gate electrode being electrically connected to the first drain region; and an electrode for applying a substrate bias to the first and second semiconductor regions. | 2012-04-05 |