14th week of 2014 patent applcation highlights part 39 |
Patent application number | Title | Published |
20140093944 | POST PROTEIN HYDROLYSIS REMOVAL OF A POTENT RIBONUCLEASE INHIBITOR AND THE ENZYMATIC CAPTURE OF DNA - The present invention concerns compositions and methods of extracting infectious pathogens from a volume of blood. In one embodiment, the method includes the steps of creating a fibrin aggregate confining the pathogens and introducing a fibrin lysis reagent to expose the pathogens for analysis. The present invention also concerns materials and methods for removing aurintricarboxylic acid (ATA) from a sample. | 2014-04-03 |
20140093945 | Fractionation of Oil-Bearing Microbial Biomass - The invention generally relates to the production of hydrocarbon compositions, such as a lipid, in microorganisms. In particular, the invention provides methods for extracting, recovering, isolating and obtaining a lipid from a microorganism and compositions comprising the lipid. The invention also discloses methods for producing hydrocarbon compositions for use as biodiesel, renewable diesel, jet fuel, and other materials. | 2014-04-03 |
20140093946 | SYSTEM FOR OPTIMIZING THE INTRODUCTION OF NUCLEIC ACIDS INTO CELLS USING MAGNETIC PARTICLES - An embodiment of a system is provided herein, wherein the system allows for the analysis and selection of numerous experimental conditions to optimize transfection efficiency and cell viability. The system is used for magnetic particle based nucleic acid delivery by optimizing various parameters. The system comprises a control module; an incubation module for incubating magnetic nanoparticle and nucleic acid; a transfection module and an analysis module. | 2014-04-03 |
20140093947 | NUCLEIC ACID AMPLIFICATION APPARATUS AND NUCLEIC ACID ANALYSIS APPARATUS - According to a conventional technique, when a calibrated temperature measuring probe is used for correcting the temperature absolute values of individually temperature-controllable thermal control blocks, a temperature difference of a maximum of 0.5° C. remains between the thermal control blocks. According to the present invention, the melting temperature of a temperature calibration sample housed in a reaction vessel corresponding to each of the temperature control blocks is measured as a measured melting temperature. The measured melting temperature corresponding to each of the thermal control blocks and the reference melting temperature of the temperature calibration sample are compared, and the temperature absolute value of each of the thermal control blocks is corrected based on respective difference values. | 2014-04-03 |
20140093948 | Light source module and analytical instrument for analyzing a sample - A light source module for use in an analytical instrument for analyzing at least one sample is disclosed. The light source module includes at least one light-emitting diode and at least one light guiding rod adapted to guide and shape light emitted by the light-emitting diode. The light source module further includes at least one memory device. The memory device has stored therein at least one driving parameter set, for driving the light-emitting diode in such a way that desired emission properties of light provided by the light source module are generated. | 2014-04-03 |
20140093949 | ABSORBANCE SPECTRUM SCANNING FLOW CYTOMETRY - The present invention provides systems and methods for analyzing the excitation spectra of fluorescent particles in a flowing stream. The system uses a white light laser and color separation optics to provide a spatially-distributed, continuous color-spectrum excitation light system that is used to illuminate a region of a flowing stream. A particle that passes through the detection region traverses the full dispersed spectrum of excitation light, and the fluorescence emissions from the particle are continuously measured as it passes through the detection region. The measured fluorescence emissions at each wavelength of excitation light, which changes through full spectrum of the excitation light as the particle passes through the detection region, provides the excitation spectrum of the particle. | 2014-04-03 |
20140093950 | PHOTOBIOREACTOR - An invention proposes a photobioreactor with a cultivation chamber in the form of a shallow closed trough that is irradiated by the sun light. The bottom section of the shallow closed trough comprises an elongated polymer flexible film, which is arranged with small inclination to the horizontal plane; the middle longitudinal section of the elongated polymer flexible film plays a role of the bottom cover of the shallow closed trough. A bank of translucent or transparent flat rigid members, which are abutted in-line with a small inclination to the horizontal plane, provides required rigidity to the entire photobioreactor. The translucent or transparent flat rigid members are provided with longitudinal bottom spacers and joined with the lateral longitudinal sections of the elongated polymer flexible film. In addition, the translucent flat rigid members serve for closing the shallow trough from above. | 2014-04-03 |
20140093951 | ALGAE PROCESSING - A method for culturing algae comprising, forming an emulsion comprising a gaseous stream and a media utilizing a high shear device, wherein the emulsion comprises gas bubbles, and wherein the high shear device comprises at least one toothed rotor and at least one stator; introducing the emulsion into a bioreactor; and introducing an algae into the bioreactor for growing the algae culture. Additionally, a method for producing liquids from an algae culture, the method comprising forming an emulsion comprising a buffer and algal components, wherein the emulsion comprises algal component globules; separating algal hydrocarbons; and processing algal hydrocarbons to form liquid hydrocarbons. Additionally, a system for producing liquids from an algae culture comprising at least one high shear device. | 2014-04-03 |
20140093952 | Bioreactor Tangential Flow Perfusion Filter System - A bioreactor hollow fiber perfusion system increases the capacity of standard fed batch bioreactors. The bioreactor hollow fiber perfusion system cycles bioreactor mass through a hollow fiber tangential flow filter which separates the metabolic wastes (as well as proteins) from the biomass material allowing the reactions in the bioreactor to continue when compared to a fed batch bioreactor. The bioreactor hollow fiber perfusion system preferably includes a low shear gamma stable disposable pumphead responsible for biomass re-cycling and can be easy installed or replaced without the risk of contamination. | 2014-04-03 |
20140093953 | NON-ADHERENT CELL SUPPORT AND MANUFACTURING METHOD - A non-adherent cell support for use as a substrate in fluidic chambers used for cell culturing and assays. The non-adherent cell support allows for the formation of sphere cultures from single cells, which can better mimic primary tumor-like behavior in the study of cancer stem cells. The non-adherent cell support can allow for adhesive culturing and may include a hydrophobic substrate having a lower body and a raised support structure extending upwardly from an upper surface of the body. The support structure comprises one or more vertically extending support members that extend from a proximal portion at the upper surface of the body to a distal end spaced from the upper surface of the body. The support structure may be formed from a biocompatible material such as poly-2-hydroxyethyl methacrylate, polydimethylsiloxane, polymethyl methacrylate, polystyrene, or a polyethylene glycol diacrylate-based hydrogel. | 2014-04-03 |
20140093954 | IMMUNOMODULATORY MINICELLS AND METHODS OF USE - The present disclosure is related to immunomodulatory bacterial minicells and methods of using the minicells. | 2014-04-03 |
20140093955 | METHOD FOR CULTURING MYCOPLASMA CONTAMINATION-FREE CELLS AND METHOD FOR REMOVING MYCOPLASMA CONTAMINATION OF CELLS - Provided is a method for culturing cells, which prevents the possibility of mycoplasma contamination by culturing the cells using biomass extract obtained by culturing a strain with amphidinol productivity, preferably a strain such as | 2014-04-03 |
20140093956 | Modified Human Thymic Stromal Lymphopoietin - Modified, furin resistant human TSLP polypeptides and polynucleotides encoding the modified human TSLP polypeptides are provided. Pharmaceutical compositions, B and T cell activation agents, assays and methods of use are also described. | 2014-04-03 |
20140093957 | Cells Useful for Immuno-Based Botulinum Toxin Serotype A Activity Assays - The present specification discloses clonal cell lines susceptible to BoNT/A intoxication, methods of producing such clonal cell lines, and methods of detecting Botulinum toxin serotype A activity using such clonal cell lines. | 2014-04-03 |
20140093958 | HYDROGEL COMPOSITION AND USES THEREOF - Hydrogel composition comprising gelatin, poly-glutamic acid and epiregulin suitable for cultivating keratinocytes, preferably human keratinocytes. | 2014-04-03 |
20140093959 | FC MUTANTS - The present invention provides reagents, methods and systems for predicting the inhibitory activity of an antibody or variant thereof comprising: determining a binding affinity of the antibody or variant thereof to a Fc activating receptor; determining a binding affinity of the antibody or variant thereof to a Fc inhibitory receptor, and calculating the ratio of said activating binding affinity to said inhibitory binding affinity (A/I ratio), wherein the magnitude of said ratio is less than one (1). | 2014-04-03 |
20140093960 | CELL DIFFERENTIATION INDUCER AND DIFFERENTIATION INDUCING METHOD - The objective of the present invention is to provide a cell differentiation inducer which is a low-molecular compound, which can be chemically synthesized easily and which can efficiently induce a differentiation of an undifferentiated cell into a nervous system cell with high selectivity. In addition, the objective of the present invention is to provide use of a specific catechol derivative for efficiently inducing a differentiation of an undifferentiated cell into a nervous system cell with high selectivity, and a method for efficiently inducing a differentiation of an undifferentiated cell into a nervous system cell with high selectivity using a specific catechol derivative. The cell differentiation inducer of the present invention is characterized in comprising the catechol derivative having the specific chemical structure. | 2014-04-03 |
20140093961 | METHOD OF WASHING ADHERENT CELL USING TREHALOSE-CONTAINING CELL-WASHING SOLUTION - Methods of washing adherent cells, capable of effectively suppressing cell death due to proteolytic enzyme treatment for detaching the adherent cell from a culture vessel and subsequent cell treatment; cell-washing solutions used for the washing method; methods of producing cell suspensions for transplantation using the cell-washing solution; and kits comprising the cell-washing solution. Trehalose or its derivative or a salt thereof is added to physiological aqueous solutions to prepare cell-washing solutions containing trehalose or its derivative or a salt thereof as an active ingredient. The cell-washing solutions can be used to wash adherent cells before detaching the adherent cells from a culture vessel by proteolytic enzyme treatment to suppress cell death due to the proteolytic enzyme treatment. The concentration of trehalose applied to the cell-washing solution may be a concentration capable of suppressing the cell death due to the proteolytic enzyme treatment, such as 0.1 to 20 (w/v)%. | 2014-04-03 |
20140093962 | NON-ADHERENT CELL SUPPORT AND MANUFACTURING METHOD - A non-adherent cell support for use as a substrate in fluidic chambers used for cell culturing and assays. The non-adherent cell support allows for the formation of sphere cultures from single cells, which can better mimic primary tumor-like behavior in the study of cancer stem cells. The non-adherent cell support can allow for adhesive culturing and may include a hydrophobic substrate having a lower body and a raised support structure extending upwardly from an upper surface of the body. The support structure comprises one or more vertically extending support members that extend from a proximal portion at the upper surface of the body to a distal end spaced from the upper surface of the body. The support structure may be formed from a biocompatible material such as poly-2-hydroxyethyl methacrylate, polydimethylsiloxane, polymethyl methacrylate, polystyrene, or a polyethylene glycol diacrylate-based hydrogel. | 2014-04-03 |
20140093963 | Cellular Substrate for Nuclear Reprogramming - This invention relates to the use of late out-growth endothelial progenitor cells (L-EPCs) as a cellular substrate for the generation of Induced pluripotent stem cells (iPSCs). This may be useful in the production of patient-specific tissues for disease modelling, drug and toxicology screening, tissue replacement and delivery of gene therapy. | 2014-04-03 |
20140093964 | DELIVERY OF BIOLOGICAL MATERIALS INTO CELLULAR ORGANELLES - Systems, devices, and methods for delivering a biological material into an organelle of a cell are provided. In one aspect, for example, a method for introducing biological material into an organelle of a cell includes bringing into proximity a lance and a preselected biological material outside of a cell and charging the lance with a polarity and a charge sufficient to electrically associate the preselected biological material with a tip portion of the lance. The method also includes penetrating an outer portion of the cell with the lance and directing and inserting the lance into an organelle, discharging the lance to release at least a portion of the biological material into the organelle, and withdrawing the lance from the cell. | 2014-04-03 |
20140093965 | EXPRESSION SYSTEMS AND METHODS OF PRODUCING SPIDER SILK PROTEINS - An expression system, including a host cell, a synthetic spider silk polypeptide-encoding nucleotide sequence, at least one synthetic tRNA molecule-encoding nucleotide sequence or a synthetic serine hydroxymethyl transferase (SHMT)-encoding nucleotide sequence. | 2014-04-03 |
20140093966 | DEVICE FOR SUPPLY OF REACTANT LIQUIDS - The inventive device serves for simultaneous supply of nonvolatile reactant liquid to a plurality of mixing points or to a plurality of reactors, the device comprising a reservoir vessel, a supply line and a splitter which divides the supply line into a group of downstream lines. Each individual downstream line is functionally connected to one mixing point or one reactor and each is equipped with a restrictor element, the restrictor elements and at least parts of the downstream lines being in contact with a sheath having a temperature control unit. | 2014-04-03 |
20140093967 | SPECIMEN TRANSPORTER, SPECIMEN TESTING SYSTEM AND SPECIMEN TRANSPORTING METHOD - A specimen transporter for transporting a specimen plate, one side of which is a smearing surface, to a specimen imaging apparatus, the specimen transporter comprising: a specimen transport section that transports the specimen plate to the specimen imaging apparatus; a posture changing section that receives the specimen plate from the specimen imaging apparatus with the smearing surface facing upward, and changes the posture of the specimen plate so that one end side in a longitudinal direction of the received specimen plate is positioned above the other end side; and a specimen inserting section that inserts the specimen plate, which posture is changed, into a plate storage rack. | 2014-04-03 |
20140093968 | Method for Highly Multiplexed Quantitation of Peptides by Mass Spectrometry and Mass Labels Therefor - Disclosed herein are isobaric labeling reagent sets useful for multiplexed quantitation of peptides. The isobaric labeling reagent sets include a collection of at least two isobaric labeling reagents having first and second reporter groups with the same nominal mass but different isotopic substitutions and consequently different exact masses. Mass spectrometric analysis of the labeled samples is performed using a mass analyzer, such as an Orbitrap mass analyzer, capable of adequately resolving the ions of the first and second reporter groups. Reagent sets of the foregoing description may provide a degree of multiplexing in reporter ion quantitation experiments that is expanded relative to conventional labeling reagent sets, thereby reducing the number of chromatographic runs required for analysis and improving sample throughput. | 2014-04-03 |
20140093969 | DETECTION KIT - A detection kit comprises a plurality of swabs, each of the plurality of swabs having the form of a stick, being bundled together in a single test kit for detection of a plurality of chemical compounds. A user opens a detection kit, swabs a surface or surfaces with the bundled sticks, collecting chemical constituents to be tested on detection surfaces of each of the plurality of sticks. Liquids, mists, vapors and powders may be tested in one method, utilizing one or more dry reagents on the detection surfaces. The sticks may comprise a volume of fluid, releasably contained within the sticks, such that when activated, a fluid, such as a reagent or solvent, is wicked by a wicking tip to the detection surface of the stick. For example, a mechanism is provided that is capable of breaking a vial or ampoule containing the fluid, when activated by a twisting motion or compression. Adhesive may be present on one or more of the detection surfaces. A transparent reaction chamber may be provided by a transparent cover or cap. | 2014-04-03 |
20140093970 | METHOD FOR DIAGNOSING ACUTE ALCOHOLIC HEPATITIS - A method for determining whether a subject has alcoholic hepatitis is described. The method includes determining the levels of a trimethylamine in a biological sample obtained from the subject. The level of trimethylamine in the biological sample is compared to the control value, and the subject whose level of trimethylamine exceeds the control value is diagnosed as having alcoholic hepatitis. | 2014-04-03 |
20140093971 | System and Method for Determining Concentration of Oxygen in Chemical Mixtures - A system for determining concentration of oxygen in a chemical mixture is presented. The system includes a first sensing device configured to measure the concentration of oxygen in the chemical mixture and generate a first output signal, where the first output signal is indicative if the concentration of oxygen in the chemical mixture and a type of the chemical mixture. Furthermore, the system includes a second sensing device configured to measure the concentration of oxygen in the chemical mixture and generate a second output signal. In addition, the system includes a processing unit operatively coupled to the first sensing device and the second sensing device and configured to determine the concentration of oxygen in the chemical mixture based on the first output signal, the second output signal, or both the first output signal and the second output signal based on a type of the chemical mixture. | 2014-04-03 |
20140093972 | STATION FOR THE SELECTIVE UNCAPPING OF GEL CARDS - The invention relates to a station for uncovering a receptacle comprising a body in which a plurality of adjacent holes, initially sealed by a cover, are formed. The station comprises at least one cutting member for making at least one cut in the cover between two adjacent holes, so as to form at least one cover portion closing off at least one of the holes of the receptacle, i.e., the selected hole; and at least one heating gripping device which is arranged so as to heat and remove said cover portion, thereby opening the selected hole. | 2014-04-03 |
20140093973 | EPITOPE TESTING USING SOLUBLE HLA - The present invention relates generally to a methodology for assaying the binding of a peptide to an individual, specific, soluble HLA molecule using fluorescence polarization. The peptides utilized in the method may be identified by indirect methods utilizing T lymphocytes, or by a direct method of epitope discovery described herein. | 2014-04-03 |
20140093974 | METHODS FOR ASSESSING MODIFIED LDL IMMUNE COMPLEXES IN SUBJECTS HAVING OR AT RISK OF CORONARY ARTERY DISEASE - The present invention relates to the analysis of modified LDL in the context of immune complexes. In particular, ox-LDL and AGE-LDL are shown to predict the development of coronary artery disease and other micro- and macrovascular disorders, particularly in the context of diabetes. | 2014-04-03 |
20140093975 | AUTOMATIC ANALYZER AND SAMPLE ANALYSIS METHOD - An automatic analyzer includes a reaction unit configured for holding a reaction container and carrying the reaction container to a determined operation position, the operation position including a detection operation position; a detection unit configured for detecting analyte in the reaction container of the reaction unit in the detection operation position; a bound-free (“B/F”) unit configured for removing unbound components of a reaction system; and a dispensing unit configured for dispensing reagent and/or a sample to the reaction container, wherein the reaction unit includes an incubation position for incubating a solution in the reaction container. | 2014-04-03 |
20140093976 | COMPOSITIONS, SYSTEMS AND METHODS THAT DETECT AND/OR REMOVE CROSS-REACTIVE ANTIBODIES FROM A BIOLOGICAL SAMPLE - The present invention generally relates to compositions, systems and methods that detect and/or remove cross-reactive antibodies from a biological sample. In many cases, the cross-reactive antibodies are human anti-animal antibodies. In certain cases, the cross-reactive antibodies are human anti-mouse antibodies. | 2014-04-03 |
20140093977 | LIGHT MICROSCOPY CHIPS AND DATA ANALYSIS METHODOLOGY FOR QUANTITATIVE LOCALZIED SURFACE PLASMON RESONANCE (LSPR) BIOSENSING AND IMAGING - A chip for localized surface plasmon resonance (LSPR) biosensing and imaging having a glass coverslip compatible for use in a standard microscope and at least one array of functionalized plasmonic nanostructures patterned onto the glass coverslip with electron beam nanolithography. The nanostructures can be regenerated allowing the chip to be used multiple times. Also disclosed is a method for determining the fractional occupancy values for surface-bound receptors as a function of time for LSPR biosensing from the spectroscopic response of the array and modeling the photon count in each spectrometer channel, allowing for a functional relationship to be determined between the acquired spectrum and the fractional occupancy of binding sites on the array. Additionally disclosed is a method for the spatiotemporal mapping of receptor-ligand binding kinetics in LSPR imaging using the chip and projecting a magnified image of the array to a CCD camera and monitoring the binding kinetics of the array. | 2014-04-03 |
20140093978 | Human Salty Taste Receptor And Methods Of Modulating Salty Taste Perception - Methods for identifying modulators of the epithelial sodium ion channel and for identifying modulators of salty taste perception are described. Also featured are isolated human salty taste receptors, artificial lipid bilayers comprising an epithelial sodium ion channels, and kits for practicing the claimed methods. | 2014-04-03 |
20140093979 | Microfabricated QLIDA Biosensors with an Embedded Heating and Mixing Element - An apparatus and method for detecting an analyte are described. The apparatus includes at least one microchannel adapted for an analyte to adhere to an interior surface thereof, a mixing element positioned within at least a portion of the at least one microchannel, a light source for energizing quantum dots conjugated with the analyte within the at least one microchannel, and a detection system for detecting and quantifying fluorescent energy emitted by the quantum dots in one or more predetermined wavelength ranges, wherein each wavelength range being correlated to one and only one type of analyte. The method includes the steps of providing a sample to at least one microchannel coated with an antibody, contacting the sample with a conjugate comprising a quantum dot and an antibody that specifically binds to the analyte, increasing electrothrermal flow of the sample, energizing the quantum dot with a light source, detecting fluorescent emission from the quantum dot, and correlating the fluorescent emission to the presence of or the concentration of the analyte in the sample. | 2014-04-03 |
20140093980 | DISSOLVABLE BRIDGES FOR MANIPULATING FLUID VOLUMES AND ASSOCIATED DEVICES, SYSTEMS AND METHODS - The present technology is directed to capillarity-based devices for performing chemical processes and associated system and methods. In one embodiment, for example, a device can include a source configured to receive one or more fluids, a first material adjacent to and in fluid connection with the source, a second material, and a dissolvable volume-metering element positioned between the first material and the second material. The volume-metering element can be configured to provide a fluid connection between the first material and the second material. The volume-metering element can also be configured to at least partially dissolve and break the fluid connection between the first material and second material once a predetermined volume of fluid flows therethrough. | 2014-04-03 |
20140093981 | METHOD FOR IMMOBILIZING ALBUMIN ON A SELF-ASSEMBLED MONOLAYER - The method of the present disclosure is characterized by that one molecule of the amino acid is interposed between the self-assembled monolayer and the molecule of the albumin. For example, a method is provided for immobilizing albumin on a self-assembled monolayer, the method including the following steps (a) and (b) in this order: a step (a) of preparing a substrate including one molecule of an amino acid and the self-assembled monolayer and a step (b) of supplying the albumin to the substrate to form a peptide bond represented by a predetermined chemical formula as a result of reaction between the carboxyl group of the one molecule of the amino acid and the amino group of the albumin. | 2014-04-03 |
20140093982 | MEASUREMENT METHOD AND MEASUREMENT KIT OF ANTIBIOTICS CONCENTRATION - A method and kit for measuring a concentration of an antibiotic are provided. The method of measuring a concentration of an antibiotic includes preparing magnetic particles bound to an antibiotic, preparing silica-coated fluorescent particles to which at least one antibody of the antibiotic is bound, allowing the magnetic particles to react with the silica-coated fluorescent particles, and irradiating the reacted silica-coated fluorescent particles with laser beams. | 2014-04-03 |
20140093983 | METHOD FOR FABRICATING A DAMASCENE SELF-ALIGNED FERRORELECTRIC RANDOM ACCESS MEMORY (F-RAM) HAVING A FERROELECTRIC CAPACITOR ALIGNED WITH A THREE DIMENSIONAL TRANSISTOR STRUCTURE - A method for a non-volatile, ferroelectric random access memory (F-RAM) device that includes a ferroelectric capacitor aligned with a preexisting structure is described. In one embodiment, the method includes forming an opening in an insulating layer over a contact in a planar surface of a substrate to expose at least a portion of the contact. Next a self-aligned contact (SAC) is formed electrically coupling to the contact, the SAC medially located in the opening and proximal to a sidewall thereof. A ferroelectric spacer is then formed in the opening medially of the SAC, and a top electrode spacer formed in the opening over the insulating cap and medially of the ferroelectric spacer. | 2014-04-03 |
20140093984 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE TRANSFER METHOD AND STORAGE MEDIUM - In a substrate processing apparatus | 2014-04-03 |
20140093985 | IN SITU OPTICAL DIAGNOSTIC FOR MONITORING OR CONTROL OF SODIUM DIFFUSION IN PHOTOVOLTAICS MANUFACTURING - A method of fabricating a photovoltaic device | 2014-04-03 |
20140093986 | Optically Monitoring and Controlling Nanoscale Topography - Methods and apparatus for method for characterizing a height profile of a scattering surface relative to a fiducial plane. The scattering surface, which may be an interface between distinct solid, liquid, gaseous or plasma phases, is illuminated with substantially spatially coherent light, and light scattered by the scattering surface is collected and dispersed, such as by a grating, into zeroth- and first-order beams. A spatial Fourier transform of the zeroth- and first-order beams is created, and one of the beams is low-pass filtered. The beams are interfered at a focal plane detector to generate an interferogram, which is transformed to retrieve a spatially resolved quantitative phase image and/or an amplitude image of the scattering surface. Imaging may be performed during an etching process, and may be used to adaptively control a photoetching process in a feedback loop. | 2014-04-03 |
20140093987 | Residue Detection with Spectrographic Sensor - Detecting residue of a filler material over a patterned underlying layer includes causing relative motion between a probe of an optical metrology system and a substrate, obtaining a plurality of measured spectra with the optical metrology system through the probe from a plurality of different measurement spots within an area on the substrate, comparing each of the plurality of measured spectra to a reference spectrum to generate a plurality of similarity values, the reference spectrum being a spectrum reflected from the filler material, combining the similarity values to generate a scalar value, and determining the presence of residue based on the scalar value. | 2014-04-03 |
20140093988 | METHOD OF MANUFACTURING DISPLAY DEVICE - According to one embodiment, a method of manufacturing a display device, includes preparing a first substrate configured such that a first display element module is formed on a first glass substrate, preparing a second substrate configured such that a first peeling auxiliary layer is formed on a second glass substrate, and then a first color filter layer is formed on the first peeling auxiliary layer, attaching the first display element module and the first color filter layer, and peeling the second glass substrate from the first peeling auxiliary layer. | 2014-04-03 |
20140093989 | LIGHT EMITTING DIODE THERMALLY ENHANCED CAVITY PACKAGE AND METHOD OF MANUFACTURE - Several embodiments of light emitting diode packaging configurations including a substrate with a cavity are disclosed herein. In one embodiment, a cavity is formed on a substrate to contain an LED and phosphor layer. The substrate has a channel separating the substrate into a first portion containing the cavity and a second portion. A filler of encapsulant material or other electrically insulating material is molded in the channel. The first portion can serve as a cathode for the LED and the second portion can serve as the anode. | 2014-04-03 |
20140093990 | Light Emitting Diode Optical Emitter with Transparent Electrical Connectors - An optical emitter includes a Light-Emitting Diode (LED) on a package wafer, transparent insulators, and one or more transparent electrical connectors between the LED die and one or more contact pads on the packaging wafer. The transparent insulators are deposited on the package wafer with LED dies attached using a lithography or a screen printing method. The transparent electrical connectors are deposited using physical vapor deposition, chemical vapor deposition, spin coating, spray coating, or screen printing and may be patterned using a lithography process and etching. | 2014-04-03 |
20140093991 | METHOD FOR MANUFACTURING HIGH EFFICIENCY LIGHT-EMITTING DIODES - A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature. | 2014-04-03 |
20140093992 | GAS SENSOR AND METHOD FOR MANUFACTURING THE GAS SENSOR - It is an object to provide a gas sensor which is formed by a simple manufacturing process. Another object is to provide a gas sensor whose manufacturing cost is reduced. A transistor which includes an oxide semiconductor layer in contact with a gas and which serves as a detector element of a gas sensor, and a transistor which includes an oxide semiconductor layer in contact with a film having a gas barrier property and which forms a detection circuit are formed over one substrate by the same process, whereby a gas sensor using these transistors may be formed. | 2014-04-03 |
20140093993 | DEVICE OF MONOLITHICALLY INTEGRATED OPTOELECTRICS - A method is disclosed for fabricating optoelectronic component structures and traditional circuit elements on a single silicon substrate. Specific examples of optoelectronic components include, but are not limited to: photodiode structures, light emitter structures and waveguide structures. Traditional circuit elements include transistors, diodes, resistors, capacitors and associated metalized interconnects. The method of fabrication is compatible with traditional CMOS, Bi-CMOS and Bipolar processing requirements and design rules. The method consists of a set of processing steps to allow hetero-epitaxial deposition of III-V compound semiconductor films on to a suitably prepared silicon surface, a set of processing steps to allow this deposited wafer to continue processing in a traditional CMOS, Bi-CMOS or Bipolar processing line without the risk of contamination, and a set of steps to allow the fabrication of p-n and p-i-n photodiode/detector structures in parallel with the traditional CMOS, Bi-CMOS or Bipolar processing flow that produces the traditional circuit elements and also a set of steps for producing dielectric waveguides and optically black isolation films. The disclosed method also allows for wafer level encapsulation and wafer level packaging of the as-fabricated integrated optoelectronic chip. | 2014-04-03 |
20140093994 | FRONT-SIDE ILLUMINATED, BACK-SIDE CONTACT DOUBLE-SIDED PN-JUNCTION PHOTODIODE ARRAYS - The present application is a photodiode detector array for use in computerized tomography (CT) and non-CT applications. Specifically, the present application is a high-density photodiode arrays, with low dark current, low capacitance, high signal to noise ratio, high speed, and low crosstalk that can be fabricated on relatively large substrate wafers. More specifically the photodiode array of the present application is fabricated such that the PN-junctions are located on both the front side and back side surfaces of the array, and wherein the front side PN-junction is in electrical communication with the back side PN-junction. Still more specifically, the present application is a photodiode array having PN-junctions that are electrically connected from the front to back surfaces and which can be operated in a fully depleted mode at low reverse bias. | 2014-04-03 |
20140093995 | Method of Hybrid Stacked Chip for a Solar Cell - A method of hybrid stacked Chip for a solar cell onto which semiconductor layers of different materials is provided by stacking tunnel layer and bumps in order to solve the problem of lattices mismatch between the layers for further increasing of the efficiency of solar cell. Electric charges (i.e., current) generated by respective solar cells can be outputted by means of contacts. Further total power P is defined by a summation of powers of respective solar cells, i.e., V1I1+V2I2+ . . . VnIn. This is a great increase in comparison with the power of conventional solar cells connected in series. | 2014-04-03 |
20140093996 | METHOD AND APPARATUS FOR DIFFUSINON INTO SEMICONDUCTOR MATERIALS - A method and apparatus to manage the diffusion process by controlling the diffusion path in the semiconductor fabrication process is disclosed. In one embodiment, a method for processing a substrate comprising steps of forming one or more diffusion areas on said substrate; disposing the substrate in a diffusion chamber, wherein the diffusion chamber is under a vacuum condition and a source material therein is heated and evaporated; and diffusing the source material into the diffusion area on said substrate, wherein said source material travels through a diffusion controlling unit adapted to manage the flux thereof in the diffusion chamber, so concentration of the source material is uniform in a diffusion region above the substrate. | 2014-04-03 |
20140093997 | METHOD OF MANUFACTURING AN ORGANIC SEMICONDUCTOR THIN FILM - A method of manufacturing an organic semiconductor thin film includes coating an organic semiconductor solution on a substrate, and shearing the organic semiconductor solution in a direction that results in a shearing stress being applied to the organic semiconductor solution to form the organic semiconductor thin film, wherein a speed of the shearing is controlled such that an intermolecular distance of the organic semiconductor solution is adjusted. | 2014-04-03 |
20140093998 | THIN FILM TRANSISTOR PANEL AND FABRICATING METHOD THEREOF - A thin film transistor panel includes a substrate, a light blocking layer on the substrate, a first protective film on the light blocking layer, a first electrode and a second electrode on the first protective film, an oxide semiconductor layer on a portion of the first protective film exposed between the first electrode and the second electrode, an insulating layer, a third electrode overlapping with the oxide semiconductor layer and on the insulating layer, and a fourth electrode on the insulating layer. The light blocking layer includes first sidewalls, and the first protective film includes second sidewalls. The first and the second sidewalls are disposed along substantially the same line. | 2014-04-03 |
20140093999 | EMBEDDED STRUCTURES FOR PACKAGE-ON-PACKAGE ARCHITECTURE - Electronic assemblies including substrates and their manufacture are described. One assembly includes a die embedded in a dielectric layer in a multilayer substrate, and a dielectric region embedded in the dielectric layer in the multilayer substrate. The multilayer substrate includes a die side and a land side, with the first dielectric region and the dielectric layer extending to the die side. A plurality of vias are positioned within the first dielectric region, the vias extending to pads on the die side. Other embodiments are described and claimed. | 2014-04-03 |
20140094000 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device with a semiconductor chip mounted on a small-sized package substrate that includes a slot, a large number of external connection terminals, and bonding fingers. The bonding fingers are connected to the external connection terminals. The bonding fingers constitute a bonding finger arrangement in a central section and end sections of a bonding finger area along each longer side of the slot. The arrangement includes a first bonding finger array, which is located at a close distance from each longer side of the slot, and a second array, which is located at a farther distance than the distance of the first bonding finger array from each longer side of the slot. The central section of the bonding finger area includes the second bonding finger array, and the end sections of the bonding finger area include the first bonding finger array. | 2014-04-03 |
20140094001 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a semiconductor chip, a connection electrode including a first land electrode electrically coupled with the semiconductor chip, and a through electrode formed on an upper surface of the first land electrode to be electrically coupled with the first land electrode using a stud bump, and a sealing resin, through which the connection electrode passes, for sealing the semiconductor chip. | 2014-04-03 |
20140094002 | ACTIVE LAYER ION IMPLANTATION METHOD AND ACTIVE LAYER ION IMPLANTATION METHOD FOR THIN-FILM TRANSISTOR - Disclosed are an active layer ion implantation method and an active layer ion implantation method for thin-film transistor. The active layer ion implantation method comprises: applying a photoresist on the active layer; and implanting ions into the active layer through the photoresist. | 2014-04-03 |
20140094003 | Printed Material Constrained By Well Structures And Devices Including Same - A first patterned contact layer, for example a gate electrode, is formed over an insulative substrate. Insulating and functional layers are formed at least over the first patterned contact layer. A second patterned contact layer, for example source/drain electrodes, is formed over the functional layer. Insulative material is then selectively deposited over at least a portion of the second patterned contact layer to form first and second wall structures such that at least a portion of the second patterned contact layer is exposed, the first and second wall structures defining a well therebetween. Electrically conductive or semiconductive material is deposited within the well, for example by jet-printing, such that the first and second wall structures confine the conductive or semiconductive material and prevent spreading and electrical shorting to adjacent devices. The conductive or semiconductive material is in electrical contact with the exposed portion of the second patterned contact layer to form, e.g., an operative transistor. | 2014-04-03 |
20140094004 | Printed Dopant Layers - A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands. | 2014-04-03 |
20140094005 | Enhancement-Mode GaN MOSFET with Low Leakage Current and Improved Reliability - An enhancement-mode GaN MOSFET with a low leakage current and an improved reliability is formed by utilizing a SiO | 2014-04-03 |
20140094006 | TRANSISTOR FORMATION USING COLD WELDING - A device and method for fabrication includes providing a first substrate assembly including a first substrate and a first metal layer formed on the first substrate and a second substrate assembly including a second substrate and a second metal layer formed on the second substrate. The first metal layer is joined to the second metal layer using a cold welding process wherein one of the first substrate and the second substrate includes a semiconductor channel layer for forming a transistor device. | 2014-04-03 |
20140094007 | THROUGH SILICON VIA AND METHOD OF FABRICATING SAME - A through silicon via structure and a method of fabricating the through silicon via. The method includes: (a) forming a trench in a silicon substrate, the trench open to a top surface of the substrate; (b) forming a silicon dioxide layer on sidewalls of the trench, the silicon dioxide layer not filling the trench; (c) filling remaining space in the trench with polysilicon; after (c), (d) fabricating at least a portion of a CMOS device in the substrate; (e) removing the polysilicon from the trench, the dielectric layer remaining on the sidewalls of the trench; (f) re-filling the trench with an electrically conductive core; and after (f), (g) forming one or more wiring layers over the top surface of the substrate, a wire of a wiring level of the one or more wiring levels closest to the substrate contacting a top surface of the conductive core. | 2014-04-03 |
20140094008 | CMOS Devices with Schottky Source and Drain Regions - A semiconductor structure includes a semiconductor substrate, and an NMOS device at a surface of the semiconductor substrate, wherein the NMOS device comprises a Schottky source/drain extension region. The semiconductor structure further includes a PMOS device at the surface of the semiconductor substrate, wherein the PMOS device comprises a source/drain extension region comprising only non-metal materials. Schottky source/drain extension regions may be formed for both PMOS and NMOS devices, wherein the Schottky barrier height of the PMOS device is reduced by forming the PMOS device over a semiconductor layer having a low valence band. | 2014-04-03 |
20140094009 | SEMICONDUCTOR DEVICE WITH SELF-ALIGNED INTERCONNECTS - A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a metal oxide device. The metal oxide device includes first and second doped regions disposed within the substrate and interfacing in a channel region. The first and second doped regions are doped with a first type dopant. The first doped region has a different concentration of dopant than the second doped region. The metal oxide device further includes a gate structure traversing the channel region and the interface of the first and second doped regions and separating source and drain regions. The source region is formed within the first doped region and the drain region is formed within the second doped region. The source and drain regions are doped with a second type dopant. The second type dopant is opposite of the first type dopant. | 2014-04-03 |
20140094010 | METHOD OF FORMING ELECTRONIC COMPONENTS WITH INCREASED RELIABILITY - An electronic component includes a depletion-mode transistor, an enhancement-mode transistor, and a resistor. The depletion-mode transistor has a higher breakdown voltage than the enhancement-mode transistor. A first terminal of the resistor is electrically connected to a source of the enhancement-mode transistor, and a second terminal of the resistor and a source of the depletion-mode transistor are each electrically connected to a drain of the enhancement-mode transistor. A gate of the depletion-mode transistor can be electrically connected to a source of the enhancement-mode transistor. | 2014-04-03 |
20140094011 | Self-Aligned Method Of Forming A Semiconductor Memory Array Of Floating Gate Memory Cells With Single Poly Layer - A method of forming a semiconductor memory cell that includes forming the floating and control gates from the same poly layer. Layers of insulation, conductive and second insulation material are formed over a substrate. A trench is formed in the second insulation material extending down to and exposing the conductive layer. Spacers are formed in the trench, separated by a small and defined gap at a bottom of the trench that exposes a portion of the conductive layer. A trench is then formed through the exposed portion of the conductive layer by performing an anisotropic etch through the gap. The trench is filled with third insulation material. Selected portions of the conductive layer are removed, leaving two blocks thereof separated by the third insulation material. | 2014-04-03 |
20140094012 | THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES - Provided are three-dimensional semiconductor devices. A device includes an electrode structure including conductive patterns sequentially stacked on a substrate, a semiconductor pattern penetrating the electrode structure and including channel regions adjacent to the conductive patterns and vertical adjacent regions between the channel regions, and a semiconductor connecting layer extending from an outer sidewall of the semiconductor pattern to connect the semiconductor pattern to the substrate. | 2014-04-03 |
20140094013 | FABRICATING METHOD OF TRENCH-GATE METAL OXIDE SEMICONDUCTOR DEVICE - A fabricating method of a trench-gate metal oxide semiconductor device is provided. The fabricating method includes the steps of defining a first zone and a second zone in a substrate, forming at least one first trench in the second zone, forming a dielectric layer on the first zone and the second zone, filling the dielectric layer in the first trench, performing an etching process to form at least one second trench in the first zone by using the dielectric layer as an etching mask, forming a first gate dielectric layer on a sidewall of the second trench, and filling a conducting material layer into the second trench, thereby forming a first gate electrode. | 2014-04-03 |
20140094014 | CONTACT STRUCTURES FOR SEMICONDUCTOR TRANSISTORS - Embodiments of the present invention provide a method of forming contact structure for transistor. The method includes providing a semiconductor substrate having a first and a second gate structure of a first and a second transistor formed on top thereof, the first and second gate structures being embedded in a first inter-layer-dielectric (ILD) layer; epitaxially forming a first semiconductor region between the first and second gate structures inside the first ILD layer; epitaxially forming a second semiconductor region on top of the first semiconductor region, the second semiconductor region being inside a second ILD layer on top of the first ILD layer and having a width wider than a width of the first semiconductor region; and forming a silicide in a top portion of the second semiconductor region. | 2014-04-03 |
20140094015 | ALIGNMENT MEASUREMENT SYSTEM, OVERLAY MEASUREMENT SYSTEM, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, an alignment measurement system is configured to measure a position of a mark having the highest identifiability of a plurality of marks formed in a substrate. The plurality of marks are made of mutually different patterns. A device pattern is formed in the substrate using directed self-assembly after the plurality of marks is formed. | 2014-04-03 |
20140094016 | Alignment for Backside Illumination Sensor - Provided is an apparatus that includes an integrated circuit located in a first region of a substrate having first and second opposing major surfaces and an alignment mark located in a second region of the substrate and extending through the substrate between the first and second surfaces. | 2014-04-03 |
20140094017 | MANUFACTURING METHOD FOR A SHALLOW TRENCH ISOLATION - A manufacturing method for a shallow trench isolation. First, a substrate is provided, a hard mask layer and a patterned photoresist layer are sequentially formed on the substrate, at least one trench is then formed in the substrate through an etching process, the hard mask layer is removed. Afterwards, a filler is formed at least in the trench and a planarization process is then performed on the filler. Since the planarization process is performed only on the filler, so the dishing phenomenon can effectively be avoided. | 2014-04-03 |
20140094018 | Method for Dicing a Substrate with Back Metal - The present invention provides a method for dicing a substrate with back metal, the method comprising the following steps. The substrate is provided with a first surface and a second surface wherein the second surface is opposed to the first surface. A mask layer is provided on the first surface of the substrate and a thin film layer is provided on the second surface of the substrate. The first surface of the substrate is diced through the mask layer to expose the thin film layer on the second surface of the substrate. A fluid from a fluid jet is applied to the thin film layer on the second surface of the substrate after the thin film layer has been exposed by the dicing step. | 2014-04-03 |
20140094019 | WAFER PROCESSING METHOD - A wafer processing method of dividing a wafer along a plurality of crossing streets formed on the wafer to obtain individual chips. The wafer processing method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the wafer along each street to thereby form a modified layer inside the wafer and a dividing step of applying an external force to the wafer to thereby divide the wafer into the individual chips along each street with the modified layer functioning as a division start point. In the modified layer forming step, the modified layer is formed at each intersection of the crossing streets at a height where cracking can be avoided on the corner edges of each chip obtained by dividing the wafer. | 2014-04-03 |
20140094020 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Some embodiments of the present invention relate to a semiconductor device and a method of manufacturing a semiconductor device capable of preventing the deterioration of electrical characteristics. A p-type collector region is provided on a surface layer of a backside surface of an n-type drift region. A p | 2014-04-03 |
20140094021 | METHOD FOR PRODUCING GRAPHENE OXIDE WITH TUNABLE GAP - A method of fabricating a graphene oxide material in which oxidation is confined within the graphene layer and that possesses a desired band gap is provided. The method allows specific band gap values to be developed. Additionally, the use of masks is consistent with the method, so intricate configurations can be achieved. The resulting graphene oxide material is thus completely customizable and can be adapted to a plethora of useful engineering applications. | 2014-04-03 |
20140094022 | METHOD FOR MAKING EPITAXIAL STRUCTURE - A method for making an epitaxial structure is provided. The method includes the following steps. A substrate having an epitaxial growth surface is provided. A buffer layer is formed on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. An epitaxial layer is epitaxially grown on the buffer layer. The substrate and the carbon nanotube layer are removed. | 2014-04-03 |
20140094023 | FABRICATING METHOD OF SEMICONDUCTOR CHIP - A fabricating method of a semiconductor chip includes the following steps. Firstly, a substrate is provided, wherein an amorphous semiconductor layer is formed in a first surface of the substrate. Then, a first metal layer is formed on the amorphous semiconductor layer. Then, a thermal-treating process is performed to result in a chemical reaction between the first metal layer and a part of the amorphous semiconductor layer, thereby producing an amorphous metal semiconductor compound layer. Afterwards, a microwave annealing process is performed to recrystallize the amorphous metal semiconductor compound layer as a polycrystalline metal semiconductor compound layer. | 2014-04-03 |
20140094024 | PLASMA DOPING APPARATUS, PLASMA DOPING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Disclosed is a plasma doping apparatus including a processing chamber, a substrate holding unit, a plasma generating mechanism, a pressure control mechanism, a bias power supply mechanism, and a control unit. The control unit controls the pressure within the processing chamber to be a first pressure and controls the bias power to be supplied to the holding unit is to be a first bias power for a first plasma process. The control unit also controls the pressure within the processing chamber to be a second pressure which is higher than the first pressure, and controls the bias power to be supplied to the holding unit to be a second bias power which is lower than the first bias power for a second plasma process. | 2014-04-03 |
20140094025 | METHOD OF PROCESSING A SEMICONDUCTOR ASSEMBLY - A method for processing a semiconductor assembly is presented. The method includes: (a) contacting at least a portion of a semiconductor assembly with a chalcogen source, wherein the semiconductor assembly comprises a semiconductor layer comprising a semiconductor material disposed on a support; (b) introducing a chalcogen from the chalcogen source into at least a portion of the semiconductor material; and (c) disposing a window layer on the semiconductor layer after the step (b). | 2014-04-03 |
20140094026 | METHOD FOR PROVIDING ELECTRICAL CONNECTIONS TO SPACED CONDUCTIVE LINES - An integrated circuit and a method of formation provide a contact area formed at an angled end of at least one linearly extending conductive line. In an embodiment, conductive lines with contact landing pads are formed by patterning lines in a mask material, cutting at least one of the material lines to form an angle relative to the extending direction of the material lines, forming extensions from the angled end faces of the mask material, and patterning an underlying conductor by etching using said material lines and extension as a mask. In another embodiment, at least one conductive line is cut at an angle relative to the extending direction of the conductive line to produce an angled end face, and an electrical contact landing pad is formed in contact with the angled end face. | 2014-04-03 |
20140094027 | FILM FORMING METHOD AND FILM FORMING APPARATUS - Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure. | 2014-04-03 |
20140094028 | Contact and Via Interconnects Using Metal Around Dielectric Pillars - An integrated circuit containing a vertical interconnect that includes a region of interconnect metal continuously surrounding one or more dielectric pillars. The vertical interconnect electrically contacts a top surface of a lower conductive structure. An upper conductive structure contacts a top surface of the vertical interconnect. A process of forming an integrated circuit that includes forming a vertical interconnect that has a region of interconnect metal continuously surrounding one or more dielectric pillars. The vertical interconnect electrically contacts a top surface of a lower conductive structure, and an upper conductive structure contacts a top surface of the vertical interconnect. | 2014-04-03 |
20140094029 | METHOD FOR FORMING AN ELECTRICAL CONNECTION BETWEEN METAL LAYERS - A method includes forming a connection between a first metal layer and a second metal layer. The second metal layer is over the first metal layer. A via location for a first via between the first metal layer and the second metal layer is identified. Additional locations for first additional vias are determined. The first additional vias are determined to be necessary for stress migration issues. Additional locations necessary for second additional vias are determined. The second additional vias are determined to be necessary for electromigration issues. The first via and the one of the group consisting of (i) the first additional vias and second additional vias (ii) the first additional vias plus a number of vias sufficient for electromigration issues taking into account that the first additional vias, after taking into account the stress migration issues, still have an effective via number greater than zero. | 2014-04-03 |
20140094030 | MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS - A first wiring part has an intermediate layer made of a material different from materials of a first insulator layer and a first conductor layer and located between the first insulator layer and the first conductor layer. In a step of forming a first hole, which penetrates through a first element part and the first insulator layer, from a side of a first semiconductor layer toward the first conductor layer, and forming a second hole, which penetrates through the first element part, the first wiring part, and a second insulator layer, from the side toward the second conductor layer, an etching condition of the first insulator layer when the first hole is formed is that an etching rate for the material of the first insulator layer under the etching condition is higher than an etching rate for the material of the intermediate layer under the etching condition. | 2014-04-03 |
20140094031 | METHOD FOR GENERATING MASK DATA AND METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE - According to one embodiment, a method for generating mask data is configured to form a circuit pattern on a substrate using a directed self-assembly material. The method includes extracting a first region, setting a second region and setting a third region. The first region does not existing in the circuit pattern and existing in an initial pattern. The initial pattern includes a plurality of interconnect patterns extending in a first direction. The second region is formed by elongating the first region in a second direction intersecting the first direction. The second region straddles the first region in the second direction. The third region includes at least one of the second regions. The directed self-assembly material is disposed in the third region. | 2014-04-03 |
20140094032 | POLISHING AGENT AND POLISHING METHOD - A polishing agent for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate with a high polishing rate to obtain a smooth surface is provided. This polishing agent comprises an oxidant having redox potential of 0.5 V or more and containing a transition metal, silicon oxide particles, cerium oxide particles and a dispersion medium, in which a mass ratio of the silicon oxide particles to the cerium oxide particles is from 0.2 to 20. | 2014-04-03 |
20140094033 | POLISHING COMPOSITION - A polishing composition of the present invention contains a water-soluble polymer having a hydrophilic group, and abrasive grains. A hydrophobic silicon-containing part after being polished with the polishing composition has a water contact angle lower than that of the hydrophobic silicon-containing part after being polished with another composition having the same makeup as the polishing composition except that the water-soluble polymer is not contained therein. Examples of the water-soluble polymer include polysaccharides and alcohol compounds. Another polishing composition of the present invention contains abrasive grains having a silanol group, and a water-soluble polymer. When this polishing composition is left to stand for one day in an environment at a temperature of 25° C., the water-soluble polymer is adsorbed on the abrasive grains at 5,000 or more molecules per 1 μm | 2014-04-03 |
20140094034 | PATTERN FORMING METHOD - A pattern forming method includes forming a pattern forming material film on a substrate as an etching target film, the pattern forming material film having an exposing section that has porosity upon exposure and a non-exposing section, patterning and exposing the pattern forming material film for the exposing section to have the porosity, selectively infiltrating a filling material into voids of the exposing section to reinforce the exposing section, and removing the non-exposing section of the pattern forming material film by dry etching to form a predetermined pattern. | 2014-04-03 |
20140094035 | CARBON DEPOSITION-ETCH-ASH GAP FILL PROCESS - Techniques, systems, and apparatuses for performing carbon gap-fill in semiconductor wafers are provided. The techniques may include performing deposition-etching operations in a cyclic fashion to fill a gap feature with carbon. A plurality of such deposition-etching cycles may be performed, resulting in a localized build-up of carbon film on the top surface of the semiconductor wafer near the gap feature. An ashing operation may then be performed to preferentially remove the built-up material from the top surface of the semiconductor wafer. Further groups of deposition-etching cycles may then be performed, interspersed with further ashing cycles. | 2014-04-03 |
20140094036 | DIRECTIONAL SIO2 ETCH USING LOW-TEMPERATURE ETCHANT DEPOSITION AND PLASMA POST-TREATMENT - Methods for processing a substrate are described herein. Methods can include positioning a substrate comprising silicon in a processing chamber, delivering a plasma to the surface of the substrate while biasing the substrate, exposing the surface of the substrate to ammonium fluoride (NH | 2014-04-03 |
20140094037 | Method and Apparatus for Preventing Native Oxide Regrowth - A method for combinatorially processing a substrate is provided. The method includes introducing a first etchant into a reactor cell and introducing a fluid into the reactor cell while the first etchant remains in the reactor cell. After initiating the introducing the fluid, contents of the reactor cell are removed through a first removal line and a second removal line, wherein the first removal line extends farther into the reactor cell than the second removal line. A level of the fluid above an inlet to the first removal line is maintained while removing the contents. A second etchant is introduced into the reactor cell while removing the contents through the first removal line and the second removal line. The method includes continuing the introducing of the second etchant until a concentration of the second etchant is at a desired level, wherein the surface of the substrate remains submerged. | 2014-04-03 |
20140094038 | ENHANCING ADHESION OF CAP LAYER FILMS - The present invention provides methods and apparatuses for improving adhesion of dielectric and conductive layers on a substrate to the underlying layer. The methods involve passing a process gas through a plasma generator downstream of the substrate to create reactive species. The underlying layer is then exposed to reactive species that interact with the film surface without undesirable sputtering. The gas is selected such that the interaction of the reactive species with the underlying layer modifies the surface of the layer in a manner that improves adhesion to the subsequently formed overlying layer. During exposure to the reactive species, the substrate and/or process gas may be exposed to ultraviolet radiation to enhance surface modification. In certain embodiments, a single UV cure tool is used to cure the underlying film and improve adhesion. | 2014-04-03 |
20140094039 | EDGE RING LIP - Embodiments of the invention generally relate to a support ring to support a substrate in a process chamber. In one embodiment, the support ring comprises an inner ring, an outer ring connecting to an outer perimeter of the inner ring through a flat portion, an edge lip extending radially inwardly from an inner perimeter of the inner ring to form a supporting ledge to support the substrate, and a substrate support formed on a top surface of the edge lip. The substrate support may include multiple projections extending upwardly and perpendicularly from a top surface of the edge lip, or multiple U-shaped clips securable to an edge portion of the edge lip. The substrate support thermally disconnects the substrate from the edge lip to prevent heat loss through the edge lip, resulting in an improved temperature profile across the substrate with a minimum edge temperature gradient. | 2014-04-03 |
20140094040 | PLASMA PROCESSING METHOD - In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate. | 2014-04-03 |
20140094041 | CONTACT SYSTEM - The invention is provided with a contact system ( | 2014-04-03 |
20140094042 | POWER SUPPLY SYSTEM INCLUDING PANEL WITH SAFETY RELEASE - A power supply system for use with a power source. The system includes a safety circuit panel with a wall receptacle and a power cable with a safety ejector subsystem. The safety ejector subsystem includes a latch connected to the wall receptacle connector of the power cable and a tension line connected to the latch and to the power cable. When the power cable is placed in tension, such as when the power cable has not been disconnected from the wall receptacle in the ordinary way, the safety ejector subsystem forces the disconnection of the power cable from the wall receptacle, thereby ensuring that no live wiring is exposed to the environment. | 2014-04-03 |
20140094043 | HEADER CONNECTOR - A header connector includes a housing configured to be mounted to a mounting surface of the circuit board and header contacts held by the housing. The header contacts have mating portions and mounting portions. The mounting portions are configured to be surface mounted to corresponding pads on the circuit board. A spring clip is coupled to the housing. The spring clip has a spring finger extending through the circuit board to engage a bottom side of the circuit board opposite the mounting surface of the circuit board. The spring clip pulls the housing and header contacts toward the mounting surface. | 2014-04-03 |