| 14th week of 2014 patent applcation highlights part 12 |
| Patent application number | Title | Published |
|---|
| 20140091243 | SEALING SYSTEM FOR A SOLENOID VALVE AND SOLENOID VALVE - A sealing system for a solenoid valve is provided for accommodation in a recess in an actuating element movable by a coil. The recess proceeds from an end face of the actuating element close to a valve seat. The actuating element is movably mounted in a solenoid valve and designed to clear or close the valve seat ( | 2014-04-03 |
| 20140091244 | DEVICE FOR TRANSFERRING A LIQUID - A liquid-transfer device that comprises a tubular coupling element for fastening in sealed manner to a liquid-transfer orifice and including a bore extending through the coupling element, and a valve member mounted to slide in the coupling element between a closed position for closing the coupling element and a liquid-transfer position for transferring liquid through the coupling element. The valve member is slidable against a return spring urging it towards the closed position and being suitable for sliding from the closed position to the liquid-transfer position under the action of an adapter that is reversibly connectable to the coupling element. One coupling element and the adapter includes a set of longitudinal grooves and the other includes radial teeth that engage in the grooves while the adapter is being actuated, the coupling element having an abutment against which the adapter bears after the valve member has been actuated by the adapter. | 2014-04-03 |
| 20140091245 | FAUCET HANDLE WITH CONTROL VALVE PARALLEL TO MOUNTING SURFACE - A faucet handle includes a fluid supply line, fluid return line, and valve cartridge. A first portion of the valve cartridge provides a connecting passage between fluid supply line and fluid return line and allows fluid flow when the valve cartridge is open. A valve body having first and second openings houses the first portion of the valve cartridge. A second portion of the valve cartridge extends through first opening and extends from first portion to second portion in a direction that is substantially parallel to a mounting surface. A control handle contacts second portion of the valve cartridge. When control handle is rotated in a first direction around an axis along which the valve cartridge extends the valve cartridge is opened allowing flow from supply line to return line, and when the valve cartridge is rotated around the axis in an opposing direction the valve cartridge is closed. | 2014-04-03 |
| 20140091246 | ELECTRONIC EXPANSION VALVE - An electronic expansion valve comprising a screw rod and a motor provided with an output shaft. The output shaft is transmissively connected to the screw rod via a gear system. The gear system is supported on a gear base. The screw rod passes through the gear base. The electronic expansion valve also comprises a valve base provided with valve cavity and a motor housing arranged on the exterior of the motor. The gear base is further arranged within the valve cavity. The upper end part of the valve base is further connected to the lower end part of the motor housing. The structural design of the electronic expansion valve reduces the number of sealed parts for same, thus effectively lowering the probability of leakage and simplifying the assembly structure thereof. | 2014-04-03 |
| 20140091247 | MINERAL FIBRE INSULATION - A mineral wool insulating product having improved off gassing characteristics is particularly adapted for high temperature applications. | 2014-04-03 |
| 20140091248 | INSULATING MATERIAL - The invention relates to a flexible insulating material based on a high temperature resistant rubber mixture. The insulation material for use at temperatures of more than 130° C., which is easy to apply to complex components to be insulated and also fills in undercuts, is an insulation material in which at least a portion of the rubber mixture is not crosslinked and can be plastically deformed, wherein the Mooney viscosity ML(1+4) of the mixture, determined at 23° C. according to DIN 53523 Part 3, is 5 to 20 MU. | 2014-04-03 |
| 20140091249 | ELECTRET SHEET - Provided is an electret having high piezoelectric properties. An electret sheet of the invention is characterized in that it comprises a synthetic resin sheet is electrified by injecting electric charges thereinto, that the synthetic resin sheet comprises two types of synthetic resins incompatible with each other, and that these synthetic resins form a phase separated structure and are cross-linked through a polyfunctional monomer. Therefore, positive and negative charges in an apparently polarized state are present in the interfacial portions between the two types of synthetic resins incompatible with each other. By applying an external force to the electret sheet to deform it, the relative positions of these positive and negative charges are changed, and these changes cause a favorable electrical response. Therefore, the electret sheet has high piezoelectric properties. | 2014-04-03 |
| 20140091250 | POLYURETHANE RESIN, METHOD OF MANUFACTURING THE SAME, AND ITS USAGE - The method of manufacturing a polyurethane resin includes subjecting a (meth)acryloyl(oxy) group-containing polyurethane resin and a hydroxyl group-containing thiol to a Michael addition reaction in a solvent to provide a hydroxyl group-containing polyurethane resin. | 2014-04-03 |
| 20140091251 | SLOW RELEASE ANTI-ICING MATERIAL FOR BITUMINOUS PAVEMENT AND PREPARATION METHOD THEREOF - A slow release anti-icing material for a bituminous pavement and a method of manufacturing the same. The material includes X, Y and Z components. The X component is a chloride of 80-95 parts. The Y component comprises sodium silicate sodium gluconate and zinc dihydrogen phosphate. The Z component is an acrylate polymer obtained from polymerization of an acrylate monomer, as a cross-linking agent, and a hydrogen containing silicone oil. The manufacturing method includes preparing the X component, preparation the Y component, mixing the X component and the Y component evenly, and encapsulating the surface of the mixture of component X and Y by the component Z evenly through polymerization, to produce the slow release anti-icing material for a bituminous pavement. The anti-icing effects are remarkable for the bituminous pavement, and the material has effects of completely preventing the pavement from icing at −5 to 0° C. | 2014-04-03 |
| 20140091252 | DEICING COMPOSITION - The present invention relates to a deicing composition comprising (i) a deicing agent selected from the group consisting of sodium chloride, calcium magnesium acetate, calcium chloride, magnesium chloride, potassium chloride, potassium acetate, sodium acetate, sodium formate, potassium formate, (ii) a native protein, and (iii) a molasses. It furthermore relates to a process for preparing said deicing composition and to a process for deicing a surface using said deicing composition. | 2014-04-03 |
| 20140091253 | Nanodiamonds containing thermoplastic thermal composites - The present disclosure provides nanodiamonds containing thermoplastic thermal composites. The nanodiamond containing thermoplastic thermal composite comprises from 0.01 to 80 wt.-% of nanodiamond particles, from 1 to 90 wt.-% of at least one filler, and from 5 to 80 wt.-% of at least one thermoplastic polymer. The present disclosure further relates to a method for manufacturing the nanodiamonds containing thermoplastic thermal composites, and to use of the nanodiamonds containing thermoplastic thermal composites. | 2014-04-03 |
| 20140091254 | METHOD OF MANUFACTURING COMPOSITIONS FOR REMOVING HALOGENATED HYDROCARBONS FROM CONTAMINATED ENVIRONMENTS - The present invention provides a supported reactant for in situ remediation of soil and/or groundwater contaminated with a halogenated hydrocarbon consisting essentially of an adsorbent impregnated with elemental iron, wherein the adsorbent is capable of adsorbing the halogenated hydrocarbon. In one embodiment, the adsorbent is activated carbon. | 2014-04-03 |
| 20140091255 | METHOD FOR PREPARING AN ELECTRODE ACTIVE MATERIAL FOR IMPROVING THE PROPERTIES OF A BATTERY, AND LITHIUM SECONDARY BATTERY INCLUDING THE ELECTRODE ACTIVE MATERIAL PREPARED THEREBY - A method of preparing an electrode active material for manufacturing a lithium secondary battery exhibiting stable charging/discharging efficiency and life-cycle characteristics even during high-speed charging/discharging cycles is provided. Also, a method of controlling both a composition ratio (Ti/Li) of surface elements and a composition of a lithium element in a lithium titanium oxide which is known to be an electrode active material having a relatively stable structure is provided. The lithium secondary battery using the lithium titanium oxide manufactured by the method as the electrode active material can be stably used by maintaining charging/discharging efficiency and charging capacity even during the high-speed charging/discharging cycles. | 2014-04-03 |
| 20140091256 | TRANSITION-METAL FREE REDUCTIVE CLEAVAGE OF AROMATIC C-O, C-N, AND C-S BONDS BY ACTIVATED SILANES - The present invention describes chemical systems and methods for reducing C—O, C—N, and C—S bonds, said system comprising a mixture of (a) at least one organosilane and (b) at least one strong base, said system being substantially free of a transition-metal compound, and said system optionally comprising at least one molecular hydrogen donor compound, molecular hydrogen, or both. | 2014-04-03 |
| 20140091257 | Preparation of Nanoparticle Materials - A method of producing nanoparticles comprises effecting conversion of a nanoparticle precursor composition to the material of the nanoparticles. The precursor composition comprises a first precursor species containing a first ion to be incorporated into the growing nanoparticles and a separate second precursor species containing a second ion to be incorporated into the growing nanoparticles. The conversion is effected in the presence of a molecular cluster compound under conditions permitting seeding and growth of the nanoparticles. | 2014-04-03 |
| 20140091258 | AGGLOMERATED PARTICULATE LOW-RANK COAL FEEDSTOCK AND USES THEREOF - The present invention relates generally to processes for preparing agglomerated particulate low-rank coal feedstocks of a particle size suitable for reaction in a fluidized-bed reactor and certain other gasification reactors and, in particular, for coal gasification and combustion applications. The present invention also relates to integrated coal gasification and combustion processes including preparing and utilizing such agglomerated particulate low-rank coal feedstocks. | 2014-04-03 |
| 20140091259 | AGGLOMERATED PARTICULATE LOW-RANK COAL FEEDSTOCK AND USES THEREOF - The present invention relates generally to processes for preparing agglomerated particulate low-rank coal feedstocks of a particle size suitable for reaction in certain gasification reactors and, in particular, for coal gasification. The present invention also relates to integrated coal gasification processes including preparing and utilizing such agglomerated particulate low-rank coal feedstocks. | 2014-04-03 |
| 20140091260 | CIRCULATING FLUIDIZED BED-TYPE GASIFICATION FURNACE AND FLUID MEDIUM FLOW RATE CONTROL METHOD - A gasification furnace ( | 2014-04-03 |
| 20140091261 | WORKING MATERIAL FOR AN ABSORPTION COOLING MACHINE - Working material for absorption machines using ammonia (NH | 2014-04-03 |
| 20140091262 | QUATERNARY AND CATIONIC AMMONIUM SURFACTANTS AS CORROSION INHIBITORS - Disclosed herein are corrosion inhibiting compounds and compositions useful in applications relating to the production, transportation, storage, and separation of crude oil and natural gas. Also disclosed herein are methods of using the compounds and compositions as corrosion inhibitors, particularly in applications relating to the production, transportation, storage, and separation of crude oil and natural gas. | 2014-04-03 |
| 20140091263 | Novel Polyvinyl Sulfonic Acid, Production Method Thereof, and Use Thereof - The present invention relates to polyvinyl sulfonic acid comprising a vinyl sulfonic acid unit represented by a specific general formula (1), wherein the molar amount of sulfonic acid groups derived from vinyl sulfonic acid monomers with respect to the molar amount of total monomer units is 50.0 to 98.0 mol %, and the polyvinyl sulfonic acid has an absorbance of 0.1 or greater (aqueous solution: 0.2 mass %, cell length: 10 mm) in a wavelength range of 255 to 800 nm. | 2014-04-03 |
| 20140091264 | ORGANIC ELECTRONIC DEVICE - The present invention relates to organic electronic devices, in particular organic electroluminescent devices, which comprise organic cyclophanes, in particular as matrix materials for fluorescent or phosphorescent emitter compounds or as charge-transport materials, in particular electron-transport materials, and to diverse organic cyclophanes themselves. | 2014-04-03 |
| 20140091265 | METAL COMPLEXES - The present invention relates to metal complexes and to electronic devices, in particular organic electroluminescent devices, comprising these metal complexes. | 2014-04-03 |
| 20140091266 | MATERIAL FOR A MOLDED RESIN FOR USE IN A SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a material for a molded resin as a material for a semiconductor light-emitting device that can yield a highly durable (light resistance and heat resistance) molded resin and can also improve the LED output through an excellent reflectivity. The present invention also provides an easily moldable material for a molded resin for a semiconductor light-emitting device. The material for a molded resin for a semiconductor light-emitting device is a resin composition, comprising (A) a polyorganosiloxane, (B) a white pigment, and (C) a curing catalyst, wherein the white pigment (B) has the following characteristics (a) and (b):
| 2014-04-03 |
| 20140091267 | PHOTOSENSITIVE RESIN COMPOSITION FOR COLOR FILTERS AND USES THEREOF - The invention relates to a photosensitive resin composition, and a color filter produced thereby has the advantages of no bubble display and little color difference before and after development. The invention also provides a method for manufacturing a color filter, color filter and liquid crystal display device. | 2014-04-03 |
| 20140091268 | Constant Pull Winch Controls - A constant pulling force winch control system includes a sensor that senses a degree of winding of a winch cable around a winch drum, and a control system configured to control a winch motor to achieve a constant pulling force on the winch cable based on the degree of winding sensed by the sensor. The sensor may be a position sensor that measures a position of the winch cable relative to a centerline of the winch drum as the degree of winding. The position sensor may sense an angular position of a tension plate relative to a tensioner shaft to measure the degree of winding. The winch motor may be a hydraulic winch motor or an electric motor, and the control system is configured to control the power applied to the hydraulic winch motor to achieve the constant pulling force based on the degree of winding sensed by the sensor. | 2014-04-03 |
| 20140091269 | FENCE FOR USE AS BARRIER INSTALLATION | 2014-04-03 |
| 20140091270 | LOW ENERGY MEMRISTORS WITH ENGINEERED SWITCHING CHANNEL MATERIALS - Low energy memristors with engineered switching channel materials include: a first electrode; a second electrode; and a switching layer positioned between the first electrode and the second electrode, wherein the switching layer includes a first phase comprising an insulating matrix in which is dispersed a second phase comprising an electrically conducting compound material for forming a switching channel. | 2014-04-03 |
| 20140091271 | RESISTANCE VARIABLE MEMORY STRUCTURE AND METHOD OF FORMING THE SAME - A semiconductor structure includes a resistance variable memory structure. The semiconductor structure also includes a dielectric layer. A portion of the resistance variable memory structure is over the dielectric layer. The resistance variable memory structure includes a first electrode embedded in the dielectric layer. A resistance variable layer disposed over the first electrode and a portion of the dielectric layer. A second electrode disposed over the resistance variable layer. | 2014-04-03 |
| 20140091272 | RESISTANCE VARIABLE MEMORY STRUCTURE AND METHOD OF FORMING THE SAME - A semiconductor structure includes a resistance variable memory structure. The semiconductor structure also includes a conductive structure. The resistance variable memory structure is over the conductive structure. The resistance variable memory structure includes a first electrode over the conductive structure. A resistance variable layer is disposed over the first electrode. A cap layer is disposed over the resistance variable layer. The cap layer includes a first metal material. A second electrode disposed over the cap layer. The second electrode includes a second metal material different from the first metal material. | 2014-04-03 |
| 20140091273 | RESISTIVE RANDOM ACCESS MEMORY AND FABRICATION METHOD THEREOF - A resistive random access memory (RRAM) unit includes at least one bit line extending along a first direction, at least one word line disposed on a substrate and extending along a second direction so as to intersect the bit line, a hard mask layer on the word line to isolate the word line from the bit line, a first memory cell on a sidewall of the word line, and a second memory cell on the other sidewall of the word line. | 2014-04-03 |
| 20140091274 | MEMORY DEVICES HAVING UNIT CELL AS SINGLE DEVICE AND METHODS OF MANUFACTURING THE SAME - In one embodiment, a memory device includes a first electrode layer on a substrate; a data storing layer on the first electrode layer; and a second electrode layer on the data storing layer. At least one of the first and second electrode layers may be formed of a material having a conduction band offset that varies with an applied voltage. One of the first and second electrode layers may be connected to a bit line and the other may be connected to a word line. The first electrode layer may include one of graphene and metastable oxide. The second electrode layer may include one of graphene and metastable oxide. | 2014-04-03 |
| 20140091275 | Quantum Dot Light Enhancement Substrate - A component including a substrate, at least one layer including a color conversion material including quantum dots disposed over the substrate, and a layer including a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material including quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein. In certain embodiments, a lighting device includes a component described herein. | 2014-04-03 |
| 20140091276 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of first three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer. A number of second three-dimensional nano-structures are located on the substrate, and a cross section of each of the three-dimensional nano-structures is M-shaped. | 2014-04-03 |
| 20140091277 | LIGHT EMITTING DIODE HAVING VERTICAL TOPOLOGY AND METHOD OF MAKING THE SAME - An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate. | 2014-04-03 |
| 20140091278 | Surface Treatment of Nanocrystal Quantum Dots After Film Deposition - Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals. | 2014-04-03 |
| 20140091279 | NON-PLANAR SEMICONDUCTOR DEVICE HAVING GERMANIUM-BASED ACTIVE REGION WITH RELEASE ETCH-PASSIVATION SURFACE - Non-planar semiconductor devices having germanium-based active regions with release etch-passivation surfaces are described. For example, a semiconductor device includes a vertical arrangement of a plurality of germanium-rich nanowires disposed above a substrate. Each nanowire includes a channel region having a sulfur-passivated outer surface. A gate stack is disposed on and completely surrounds the channel region of each of the germanium-rich nanowires. The gate stack includes a gate dielectric layer disposed on and surrounding the sulfur-passivated outer surface and a gate electrode disposed on the gate dielectric layer. Source and drain regions are disposed on either side of the channel regions of the germanium-rich nanowires. | 2014-04-03 |
| 20140091280 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE - Embodiments of the present invention provide an array substrate, a manufacturing method thereof and a display device. The manufacturing method of an array substrate, comprising: forming a gate electrode on a base substrate by a first patterning process, and then depositing a gate insulating layer on the base substrate on which the gate electrode is formed; forming source and drain electrodes on the base substrate obtained after the above step, by a second patterning process; forming an active layer formed of a graphene layer, and a protective layer disposed on the active layer, on the base substrate obtained after the above steps, by a third patterning process; and forming a planarizing layer on the base substrate, obtained after the above steps, by a fourth patterning process, in which the planarizing layer is provided with a through hole through which the source or drain electrode is exposed. | 2014-04-03 |
| 20140091281 | NON-VOLATILE MEMORY DEVICE EMPLOYING SEMICONDUCTOR NANOPARTICLES - Semiconductor nanoparticles are deposited on a top surface of a first insulator layer of a substrate. A second insulator layer is deposited over the semiconductor nanoparticles and the first insulator layer. A semiconductor layer is then bonded to the second insulator layer to provide a semiconductor-on-insulator substrate, which includes a buried insulator layer including the first and second insulator layers and embedded semiconductor nanoparticles therein. Back gate electrodes are formed underneath the buried insulator layer, and shallow trench isolation structures are formed to isolate the back gate electrodes. Field effect transistors are formed in a memory device region and a logic device region employing same processing steps. The embedded nanoparticles can be employed as a charge storage element of non-volatile memory devices, in which charge carriers tunnel through the second insulator layer into or out of the semiconductor nanoparticles during writing and erasing. | 2014-04-03 |
| 20140091282 | PROCESS FOR FABRICATING METAL BUS LINES FOR OLED LIGHTING PANELS - Systems and methods for the design and fabrication of OLEDs, including high-performance large-area OLEDs, are provided. Variously described fabrication processes may be used to deposit and pattern bus lines with a smooth profile and a gradual sidewall transition. Such smooth profiles may, for example, reduce the probability of electrical shorting at the bus lines. Accordingly, in certain circumstances, an insulating layer may no longer be considered essential, and may be optionally avoided altogether. In cases where an insulating layer is not used, further enhancements in the emissive area and shelf life of the device may be achieved as well. According to aspects of the invention, bus lines such as those described herein may be deposited, and patterned, using vapor deposition such as vacuum thermal evaporation (VTE) through a shadow mask, and may avoid multiple photolithography steps. Other vapor deposition systems and methods may include, among others, sputter deposition, e-beam evaporation and chemical vapor deposition (CVD). A final profile of the bus line may substantially correspond to the profile as deposited. | 2014-04-03 |
| 20140091283 | Semiconducting Compounds and Optoelectronic Devices Incorporating Same - Disclosed are new compounds having semiconducting properties. Such compounds can be processed in solution-phase into thin film semiconductors that exhibit high carrier mobility and/or good current modulation characteristics. | 2014-04-03 |
| 20140091284 | ORGANIC LIGHT EMITTING DIODE - An organic light emitting diode includes a substrate, a first electrode, an organic functional layer; and a second electrode. One of the first electrode and the second electrode includes a treated patterned carbon nanotube film. The treated patterned carbon nanotube film includes at least two carbon nanotube linear units spaced from each other; and carbon nanotube groups spaced from each other. The carbon nanotube groups are located between the at least two carbon nanotube linear units, and combined with the at least two carbon nanotube linear units. | 2014-04-03 |
| 20140091285 | ORGANIC LIGHT EMITTING DISPLAY DEVICES AND METHODS OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICES - An organic light emitting display device is disclosed. The organic light emitting display device includes a substrate, a first electrode, a pixel defining layer, a first hydrophobic pattern, at least one charge transport layer, a second hydrophobic pattern, an organic light emitting layer and a second electrode. The substrate has a pixel region and a non pixel region surrounding the pixel region. The first electrode, the at least one charge transport layer and the organic light emitting layer are disposed on the substrate in the pixel region, while the pixel defining layer, the first hydrophobic pattern and the second hydrophobic pattern are disposed on the substrate in the non pixel region. The charge transport layer of one pixel is separated from a charge transport layer of another pixel by the first and second hydrophobic patterns to prevent crosstalk phenomenon. | 2014-04-03 |
| 20140091286 | ORGANIC LIGHT EMITTING DIODE, TOUCH DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME - The invention provides an OLED, a touch display device and method for fabricating the same. The OLED comprises: a substrate; a pixel electrode functioning as a first conducting electrode on the substrate; a first signal electrode and a second signal electrode disposed on the same layer as the pixel electrode; an insulating layer overlaying the first signal electrode and the second signal electrode; an EL layer in the same layer as the insulating layer and overlaying the pixel electrode; a second conducting electrode overlaying at least the EL layer; and an encapsulating layer overlaying at least the second conducting electrode. | 2014-04-03 |
| 20140091287 | ORGANIC EL DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - An organic EL device has a pixel including a red, a green and a blue sub-pixel. The organic EL device includes anodes disposed in the sub-pixels, and a cathode. A red luminescent layer is formed by liquid application between the anode and the cathode, and a green luminescent layer is formed by liquid application between the anode and the cathode. A blue luminescent layer is formed by vapor deposition over the entire region of the red, green and blue sub-pixels between the red and green luminescent layers and the cathode, and between the anode and the cathode in the blue sub-pixel. An infrared luminescent layer is formed by vapor deposition over the entire region of the red, green and blue sub-pixels between the red and green luminescent layers and the blue luminescent layer, and between the anode and the blue luminescent layer in the blue sub-pixel. | 2014-04-03 |
| 20140091288 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light emitting diode (OLED) display includes a display panel including a flexible substrate and a thin film encapsulation (TFE) for covering and protecting an organic light emitting element formed on the flexible substrate, a first protective film arranged on the TFE to be opposite to the TFE, a second protective film arranged on the flexible substrate to be opposite to the flexible substrate, a first adhesive disposed between the TFE and the first protective film, a second adhesive disposed between the flexible substrate and the second protective film, a third protective film arranged on the second protective film to be opposite to the second protective film, and a third adhesive disposed between the second protective film and the third protective film. | 2014-04-03 |
| 20140091289 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device includes first and second electrodes facing each other on a substrate, a first stack including a first hole transport layer, a second hole transport layer, a first emitting layer, and a first electron transport layer, the layers being sequentially stacked on the first electrode, a second stack including a third hole transport layer, a fourth hole transport layer, a second emitting layer including at least two hosts and a single dopant and having at least three emitting areas, and a second electron transport layer, the layers being sequentially stacked between the first stack and the second electrode, wherein the second emitting layer includes a first emitting area including a material of the fourth hole transport layer, a second emitting area including a material of the second electron transport layer, and a third emitting area including the at least two hosts. | 2014-04-03 |
| 20140091290 | ENCAPSULATED STRUCTURE OF LIGHT-EMITTING DEVICE, ENCAPSULATING PROCESS THEREOF AND DISPLAY DEVICE COMPRISING ENCAPSULATED STRUCTURE - An encapsulated structure of a light-emitting device, an encapsulating process thereof, and a display device comprising said encapsulated structure. The encapsulated structure of the light-emitting device comprises: a light-emitting device; and a protective layer of a quaternary ammonium salt formed on a top electrode of the light-emitting device, the quaternary ammonium salt having the following structure: | 2014-04-03 |
| 20140091291 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, OLED DISPLAY DEVICE - An array substrate and a manufacturing method thereof, and an OLED display device are provided. The array substrate comprises: sub-pixel units defined by gate lines and data lines that cross with each other on a substrate, each of the sub-pixel units comprising a first TFT, a second TFT and a pixel electrode, a gate electrode of the first TFT being connected to the gate line, a source electrode of the first TFT being connected to the data line, and a drain electrode of the second TFT being connected to the pixel electrode. The source electrode and a drain electrode of the first TFT are formed on the same layer as a gate electrode of the second TFT, and the drain electrode of the first TFT is directly connected to the gate electrode of the second TFT. | 2014-04-03 |
| 20140091292 | OLEDs COMPRISING LIGHT EXTRACTION SUBSTRUCTURES AND DISPLAY DEVICES INCORPORATING THE SAME - An organic light emitting diode comprising a light extraction substructure and a diode superstructure is provided. The light extraction substructure comprises a light expulsion matrix distributed over discrete light extraction waveguide elements and a waveguide surface of the glass substrate. The light expulsion matrix is distributed at varying thicknesses to enhance the planarity of a diode superstructure-engaging side of the light extraction substructure and to provide light expulsion sites at the waveguide element termination points of the discrete light extraction waveguide elements. In operation, light originating in the organic light emitting semiconductor material of the diode superstructure is coupled to the discrete waveguide elements of the light extraction substructure as respective coupled modes characterized by an approximate coupling length defined as the propagation distance required for an optical mode to be coupled from the superstructure waveguide to one of the discrete waveguide elements of the light extraction substructure. | 2014-04-03 |
| 20140091293 | Light-Emitting Element, Light-Emitting Device, Display Device, Electronic Device, and Lighting Device - Provided is a light-emitting element in which an adverse effect by halides in an EL layer is suppressed and which can be provided with low cost. The light-emitting element including at least two layers between an anode and a light-emitting layer. One of the two layers which is closer to the anode has higher concentration of halides and halogen elements than the other layer closer to the light-emitting layer. | 2014-04-03 |
| 20140091294 | Organic light-emitting diode package structure - An organic light-emitting diode package structure includes an organic light-emitting diode device disposed on a substrate, and a filling layer covering the organic light-emitting diode device and including a fluorine-containing polyimide layer. | 2014-04-03 |
| 20140091295 | MIXTURES OF ORGANIC EMISSIVE SEMICONDUCTORS AND MATRIX MATERIALS, THEIR USE AND ELECTRONIC COMPONENTS COMPRISING SAID MATERIALS - The present invention relates to new types of material mixtures composed of at least two substances, one serving as a matrix material and the other being an emission material capable of emission and containing at least one element of atomic number greater than 20, and for their use in organic electronic components such as electroluminescent elements and displays. | 2014-04-03 |
| 20140091296 | ADHESIVE FILM AND METHOD OF ENCAPSULATING ORGANIC ELECTRONIC DEVICE - Provided are an adhesive film, an encapsulated product of an organic electronic device using the same, and a method of encapsulating an organic electronic device. Particularly, the adhesive film encapsulating the organic electronic device to cover an entire surface of the organic electronic device includes an adhesive layer including a curable resin and a moisture adsorbent. The adhesive layer has a viscosity in a temperature range of 30 to 130° C. of 10 | 2014-04-03 |
| 20140091297 | LIGHT EMITTING DEVICE - A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet light emitting device, that is, a device structure in which on a substrate, there are formed an anode, a hole transporting layer constituted by a hole transporting material, an electron transporting and light emitting layer constituted by an electron transporting material and a dopant capable of triplet light emission, and a cathode, which are laminated in the stated order, the combination of the hole transporting material and the electron transporting material and the combination of the electron transporting material and the dopant material are optimized. | 2014-04-03 |
| 20140091298 | NOVEL COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE USING SAME - The present invention provides a novel compound that is capable of largely improving a life span, efficiency, electrochemical stability and thermal stability of an organic light emitting device, and an organic light emitting device in which the compound is included in an organic compound layer. | 2014-04-03 |
| 20140091299 | ORGANIC ELECTROLUMINESCENCE ELEMENT, ILLUMINATION DEVICE, AND DISPLAY DEVICE - The purpose of the present invention is to provide: an organic electroluminescence element having a plurality of light-emitting dopants of different light-emitting wavelengths and emitting white light, the white-light-emitting organic electroluminescence element having excellent longevity, low-voltage driving, and chromatic stability, and also having a few dark spots; as well as an illumination device and a display device that use the element. This organic electroluminescence element contains at least one light-emitting layer sandwiched between a positive electrode and a negative electrode, the organic electroluminescence element characterized in that the light-emitting layer contribution ratio, defined as the ratio ΔPL/ΔEL of the photoluminescence intensity decay rate to the electroluminescence intensity decay rate, is 0.3 to 1.0. | 2014-04-03 |
| 20140091300 | HYBRID AMBIPOLAR TFTS - The present invention relates inter alia to an electronic device, preferably a thin film transistor (TFT) comprising layers with n-type and p-type semi conducting materials, wherein the p-type layer comprises at least one organic hole transport material. Furthermore, the present invention relates to the use of the electronic device according to the invention in an electronic equipment selected from an RFID and backplanes for a display, electronic book and electronic paper, and an electronic equipment comprising an electronic device according to the invention. | 2014-04-03 |
| 20140091301 | DISPLAY DEVICE - A transistor including an oxide semiconductor layer can have stable electrical characteristics. In addition, a highly reliable display device including the transistor is provided. The display device includes a multi-layer film including an oxide layer and an oxide semiconductor layer; a gate insulating film in contact with the multi-layer film; and a gate electrode overlapping with the multi-layer film with the gate insulating film provided therebetween. The oxide semiconductor layer contains indium, and is in contact with the oxide layer. The oxide layer contains indium, and has a larger energy gap than the oxide semiconductor layer. | 2014-04-03 |
| 20140091302 | P-TYPE METAL OXIDE SEMICONDUCTOR MATERIAL THING - The disclosure provides a p-type metal oxide semiconductor material. The p-type metal oxide semiconductor material has the following formula: In | 2014-04-03 |
| 20140091303 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The semiconductor device includes a driver circuit including a first thin film transistor and a pixel including a second thin film transistor over one substrate. The first thin film transistor includes a first gate electrode layer, a gate insulating layer, a first oxide semiconductor layer, a first oxide conductive layer, a second oxide conductive layer, an oxide insulating layer which is in contact with part of the first oxide semiconductor layer and which is in contact with peripheries and side surfaces of the first and second oxide conductive layers, a first source electrode layer, and a first drain electrode layer. The second thin film transistor includes a second gate electrode layer, a second oxide semiconductor layer, and a second source electrode layer and a second drain electrode layer each formed using a light-transmitting material. | 2014-04-03 |
| 20140091304 | LASER POWER AND ENERGY SENSOR UTILIZING ANISOTROPIC THERMOELECTRIC MATERIAL - A laser-radiation sensor includes a copper substrate on which is grown an oriented polycrystalline buffer layer surmounted by an oriented polycrystalline sensor-element of an anisotropic transverse thermoelectric material. An absorber layer, thermally connected to the sensor-element, is heated by laser-radiation to be measured and communicates the heat to the sensor-element, causing a thermal gradient across the sensor-element. Spaced-apart electrodes in electrical contact with the sensor-element sense a voltage corresponding to the thermal gradient as a measure of the incident laser-radiation power. | 2014-04-03 |
| 20140091305 | Polysilicon Thin Film And Manufacturing Method Thereof, Array Substrate And Display Device - A polysilicon thin film and a manufacturing method thereof, an array substrate and a display device are disclosed. The manufacturing method of the polysilicon thin film comprises the following steps: forming a graphene layer and an amorphous silicon layer which are adjacent; forming polysilicon by way of crystallizing amorphous silicon so as to obtain the polysilicon thin film. The polysilicon thin film manufactured by the method possesses good characteristics. | 2014-04-03 |
| 20140091306 | WIRING STRUCTURE AND DISPLAY DEVICE - Provided is a technique that allows oxidation of Cu wires to be effectively prevented during plasma processing when forming a passivation film for a display device that utilizes an oxide semiconductor layer. This wiring structure comprises a semiconductor layer (oxide semiconductor) for a thin film transistor, a Cu alloy film (laminated structure comprising a first layer (X) and a second layer (Z)), and a passivation film that are formed on a substrate, starting from the substrate side. The first layer (X) is made of an element that exhibits low electrical resistivity, such as pure Cu; and the second layer contains a plasma-oxidation-resistance improving element. The second layer (Z) is directly connected, at least partially, to the passivation film. | 2014-04-03 |
| 20140091307 | LASER POWER AND ENERGY SENSOR UTILIZING ANISOTROPIC THERMOELECTRIC MATERIAL - A laser-radiation sensor includes a copper substrate on which is grown an oriented polycrystalline buffer layer surmounted by an oriented polycrystalline sensor-element of an anisotropic transverse thermoelectric material. An absorber layer, thermally connected to the sensor -element, is heated by laser-radiation to be measured and communicates the heat to the sensor-element, causing a thermal gradient across the sensor-element. Spaced-apart electrodes in electrical contact with the sensor-element sense a voltage corresponding to the thermal gradient as a measure of the incident laser-radiation power. At least two protection layers are positioned between the sensor layer and the absorber layer. | 2014-04-03 |
| 20140091308 | SELF-ALIGNED STRUCTURES AND METHODS FOR ASYMMETRIC GAN TRANSISTORS & ENHANCEMENT MODE OPERATION - Embodiments include high electron mobility transistors (HEMT). In embodiments, a gate electrode is spaced apart by different distances from a source and drain semiconductor region to provide high breakdown voltage and low on-state resistance. In embodiments, self-alignment techniques are applied to form a dielectric liner in trenches and over an intervening mandrel to independently define a gate length, gate-source length, and gate-drain length with a single masking operation. In embodiments, III-N HEMTs include fluorine doped semiconductor barrier layers for threshold voltage tuning and/or enhancement mode operation. | 2014-04-03 |
| 20140091309 | PREDISPOSED HIGH ELECTRON MOBILITY TRANSISTOR - A predisposed high electron mobility transistor (HEMT) is disclosed. The predisposed HEMT includes a buffer layer, a HEMT channel layer on the buffer layer, a first HEMT barrier layer over the HEMT channel layer, and a HEMT cap layer on the first HEMT barrier layer. The HEMT cap layer has a drain region, a source region, and a gate region. Further, the HEMT cap layer has a continuous surface on the drain region, the source region, and the gate region. When no external voltage is applied between the source region and the gate region, the gate region either depletes carriers from the HEMT channel layer or provides carriers to the HEMT channel layer, thereby selecting a predisposed state of the predisposed HEMT. | 2014-04-03 |
| 20140091310 | SEMICONDUCTOR DEVICE USING 2-DIMENSIONAL ELECTRON GAS AND 2-DIMENSIONAL HOLE GAS AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor device includes a first compound semiconductor layer on a substrate, first through third electrodes spaced apart from each other on the first compound semiconductor layer, a second compound semiconductor layer on the first compound semiconductor layer between the first through third electrodes, a third compound semiconductor layer on the second compound semiconductor layer between the first and second electrodes, a first gate electrode on the third compound semiconductor layer, a fourth compound semiconductor layer having a smaller thickness than the third compound semiconductor layer on a portion of the second compound semiconductor layer between the second and third electrodes, and a second gate electrode on the fourth compound semiconductor layer. The first compound semiconductor layer between the second and third electrodes includes a 2-dimensional electron gas (2DEG) and the third compound semiconductor layer includes a 2-dimensional hole gas (2DHG). | 2014-04-03 |
| 20140091311 | NITRIDE SEMICONDUCTOR BASED POWER CONVERTING DEVICE - A nitride semiconductor based power converting device includes a nitride semiconductor based power transistor, and at least one nitride semiconductor based passive device. The passive device and the power transistor respectively include a channel layer including a first nitride semiconductor material, and a channel supply layer on the channel layer including a second nitride semiconductor material to induce a 2-dimensional electron gas (2DEG) at the channel layer. The passive device may be a resistor, an inductor, or a capacitor. | 2014-04-03 |
| 20140091312 | POWER SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME - A power switching device includes a channel forming layer on a substrate which includes a 2-dimensional electron gas (2DEG), and a channel supply layer which corresponds to the 2DEG at the channel forming layer. A cathode is coupled to a first end of the channel supply layer and an anode is coupled to a second end of the channel supply layer. The channel forming layer further includes a plurality of depletion areas arranged in a pattern, and portions of the channel forming layer between the plurality of depletion areas are non-depletion areas. | 2014-04-03 |
| 20140091313 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a substrate; a buffer layer formed on the substrate; a first semiconductor layer formed on the buffer layer; and a second semiconductor layer formed on the first semiconductor layer. Further, the buffer layer is formed of AlGaN and doped with Fe, the buffer layer includes a plurality of layers having different Al component ratios from each other, and the Al component ratio of a first layer is greater than the Al component ratio of a second layer and a Fe concentration of the first layer is less than the Fe concentration of the second layer, the first and second layers being included in the plurality of layers, and the first layer being formed on a substrate side of the second layer. | 2014-04-03 |
| 20140091314 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a buffer layer formed on a substrate; an SLS (Strained Layer Supperlattice) buffer layer formed on the buffer layer; an electron transit layer formed on the SLS buffer layer and formed of a semiconductor material; and an electron supply layer formed on the electron transit layer and formed of a semiconductor material. Further, the buffer layer is formed of AlGaN and includes two or more layers with different Al composition ratios, the SLS buffer layer is formed by alternately laminating a first lattice layer including AlN and a second lattice layer including GaN, and the Al composition ratio in one of the layers of the buffer layer being in contact with the SLS buffer layer is greater than or equal to an Al effective composition ratio in the SLS buffer layer. | 2014-04-03 |
| 20140091315 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device includes an electron transit layer formed on a substrate; an electron supply layer formed on the electron transit layer; a doping layer formed on the electron supply layer, the doping layer being formed with a nitride semiconductor in which an impurity element to become p-type and C are doped; a p-type layer formed on the doping layer, the p-type layer being formed with a nitride semiconductor in which the impurity element to become p-type is doped; a gate electrode formed on the p-type layer; and a source electrode and a drain electrode formed on the doping layer or the electron supply layer. The p-type layer is formed in an area immediately below the gate electrode, and a density of the C doped in the doping layer is greater than or equal to 1×10 | 2014-04-03 |
| 20140091316 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor layer formed on a substrate; a second semiconductor layer and a third semiconductor layer formed on the first semiconductor layer; a fourth semiconductor layer formed on the third semiconductor layer; a gate electrode formed on the fourth semiconductor layer; and a source electrode and a drain electrode formed in contact with the second semiconductor layer. The third semiconductor layer and the fourth semiconductor layer are formed in an area immediately below the gate electrode, the fourth semiconductor layer is formed with a p-type semiconductor material, and the second semiconductor layer and the third semiconductor layer are formed with AlGaN, and the third semiconductor layer has a lower composition ratio of Al than that of the second semiconductor layer. | 2014-04-03 |
| 20140091317 | METHOD OF MANUFACTURING SEMICONDUCTOR CRYSTAL SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS, SEMICONDUCTOR CRYSTAL SUBSTRATE, AND SEMICONDUCTOR APPARATUS - A method of manufacturing a semiconductor crystal substrate, includes forming a nitride layer by supplying a gas including a nitrogen component to a substrate formed of a material including silicon and nitriding a surface of the substrate; and forming an AlN layer on the nitride layer by supplying the gas including the nitrogen component and a source gas including Al. | 2014-04-03 |
| 20140091318 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes: a substrate; a buffer layer formed on the substrate; a strained layer superlattice buffer layer formed on the buffer layer; an electron transit layer formed of a semiconductor material on the strained layer superlattice buffer layer; and an electron supply layer formed of a semiconductor material on the electron transit layer; the strained layer superlattice buffer layer being an alternate stack of first lattice layers including AlN and second lattice layers including GaN; the strained layer superlattice buffer layer being doped with one, or two or more impurities selected from Fe, Mg and C. | 2014-04-03 |
| 20140091319 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes laminating and forming an electron transit layer, an electron supplying layer, an etching stop layer, and a p-type film on a substrate sequentially, the p-type film being formed of a nitride semiconductor material that includes Al doped with an impurity element that attains p-type, the etching stop layer being formed of a material that includes GaN, removing the p-type film in an area except an area where a gate electrode is to be formed, by dry etching to form a p-type layer in the area where the gate electrode is to be formed, the dry etching being conducted while plasma emission in the dry etching is observed, the dry etching being stopped after the dry etching is started and plasma emission originating from Al is not observed, and forming the gate electrode on the p-type layer. | 2014-04-03 |
| 20140091320 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a third semiconductor layer and a fourth semiconductor layer formed on the second semiconductor layer, a gate electrode formed on the third semiconductor layer, and a source electrode and a drain electrode contacting and formed on the fourth semiconductor layer, wherein the third semiconductor layer is formed of a semiconductor material for attaining p-type on an area just under the gate electrode, and a concentration of silicon in the fourth semiconductor layer is higher than that in the second semiconductor layer. | 2014-04-03 |
| 20140091321 | SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes. | 2014-04-03 |
| 20140091322 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - To enhance the reliability of the semiconductor device using a nitride semiconductor. A channel layer is formed over a substrate, a barrier layer is formed over the channel layer, a cap layer is formed over the barrier layer, and a gate electrode is formed over the cap layer. In addition, a nitride semiconductor layer is formed in a region where the cap layer over the barrier layer is not formed, and a source electrode and a drain electrode are formed over the nitride semiconductor layer. The cap layer is a p-type semiconductor layer, and the nitride semiconductor layer includes the same type of material as the cap layer and is in an intrinsic state or an n-type state. | 2014-04-03 |
| 20140091323 | SEMICONDUCTOR EPITAXIAL STRUCTURE - A semiconductor epitaxial structure is provided. The semiconductor epitaxial structure includes a substrate, a doped semiconductor epitaxial layer, and a carbon nanotube layer. The doped semiconductor epitaxial layer is located on the substrate. The carbon nanotube layer is located between the substrate and the doped semiconductor epitaxial layer. The carbon nanotube layer can be a carbon nanotube film drawn from a carbon nanotube array and including a number of successive and oriented carbon nanotubes joined end-to-end by van der Waals attractive force therebetween. | 2014-04-03 |
| 20140091324 | SWITCHING CIRCUIT AND SEMICONDUCTOR MODULE - A switching circuit includes: a first switching element (Q | 2014-04-03 |
| 20140091325 | SiC SINGLE CRYSTAL, PRODUCTION METHOD THEREFOR, SiC WAFER AND SEMICONDUCTOR DEVICE - When an SiC single crystal having a large diameter of a {0001} plane is produced by repeating a-plane growth, the a-plane growth of the SiC single crystal is carried out so that a ratio S | 2014-04-03 |
| 20140091326 | Light Blocking Structure in Leadframe - A semiconductor proximity sensor ( | 2014-04-03 |
| 20140091327 | DISPLAY - A display is provided. The display includes a light emitting element, a filter layer and a photosensor. The filter layer is disposed on a side of the light emitting element. The filter layer includes a black filter. The photosensor is disposed corresponding with the black filter. The photosensor is used for detecting an invisible light from the black filter. | 2014-04-03 |
| 20140091328 | IMAGING APPARATUS AND MEDICAL EQUIPMENT - A light receiving section is provided with a plurality of light receiving elements. A light source section is arranged in a subject side of the light receiving section, and is provided with a light emitting section that illuminates the subject and a plurality of transmissive sections that transmits incident light to the light receiving section side. The light emitting section is provided with a first translucent layer, which includes a light emitting layer, and a reflection layer and a semi-transmissive reflection layer, which are opposed each other interposing the first translucent layer, so that a resonance structure that resonates irradiation light from the light emitting layer is formed. Each of the transmissive sections is provided with a second translucent layer, and a first semi-transmissive reflection layer and a second semi-transmissive reflection layer, which are opposed each other interposing the second translucent layer, so that a resonance structure that resonates incident light from the subject side is formed. A resonance length between the reflection layer and the semi-transmissive reflection layer in the light emitting section is more than a resonance length between the first semi-transmissive reflection layer and the second semi-transmissive reflection layer in the transmissive section. | 2014-04-03 |
| 20140091329 | LED Emitter with Improved White Color Appearance - The present disclosure involves a lighting instrument. The lighting instrument includes a board or substrate, for example, a printed circuit board substrate. The lighting instrument includes a plurality of light-emitting diode (LED) dies disposed on the substrate. The LED dies are spaced apart from one another. Each LED die is covered with a respective individual phosphor coating that is coated around the LED die conformally. Due at least in part to the individual phosphor coatings, the LED dies and the lighting instrument may assume a substantially white appearance in an off state. The lighting instrument also includes an encapsulation structure disposed over the substrate. The encapsulation structure may be a diffuser cap that encapsulates the light-emitting dies within. A diffuser gel fills the space between the encapsulation structure and the LED dies. | 2014-04-03 |
| 20140091330 | LED PACKAGE STRUCTURE WITH TRANSPARENT ELECTRODES - The present invention discloses a LED package structure with transparent electrodes. The electrode layers | 2014-04-03 |
| 20140091331 | DISPLAY DEVICE, THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - The embodiments of the invention provide a display device, a thin film transistor, an array substrate and a manufacturing method thereof. The manufacturing method comprises: step A, forming patterns of a source electrode, a drain electrode, a data line and a pixel electrode; step B, forming an active layer and agate insulating layer in order, and forming a via hole in the gate insulating layer for connecting the data line and an external circuit; and step C, forming patterns of a gate electrode, a gate line and a common electrode line, or forming a pattern of a gate electrode, a gate line and a common electrode. | 2014-04-03 |
| 20140091332 | LED LIGHTING DEVICES INCORPORATING WAVEGUIDES - A LED lighting device includes at least one waveguide element and multiple light-emitting sources such as LEDs or LED packages, which may be optically coupled though different light entry regions to the at least one waveguide. Multiple light solid state sources may be arranged in strips. A waveguide system includes first and second body structures each positioned to illuminate at least a portion of a target surface. One or more waveguides may be arranged to illuminate a LCD panel. | 2014-04-03 |
| 20140091333 | LIGHT EMITTING DEVICE EQUIPPED WITH PROTECTIVE MEMBER - A light emitting device includes a light emitting device body and a protective member. The light emitting device body has a flexible base member, at least one light emitting element arranged on the base member, and a sealing resin member sealing the light emitting element. The protective member is disposed adjacent to the sealing resin member on the base member. The protective member has a height greater than a height of the sealing resin member. | 2014-04-03 |
| 20140091334 | ENCAPSULATING SHEET-COVERED SEMICONDUCTOR ELEMENT, PRODUCING METHOD THEREOF, SEMICONDUCTOR DEVICE, AND PRODUCING METHOD THEREOF - A method for producing an encapsulating sheet-covered semiconductor element includes a semiconductor element disposing step of disposing a plurality of semiconductor elements at spaced intervals to each other and an encapsulating sheet disposing step of disposing an encapsulating sheet so as to cover a plurality of the semiconductor elements and to form a space over the semiconductor elements adjacent to each other. | 2014-04-03 |
| 20140091335 | LIGHT EMITTING DEVICE - To provide a light emitting device that can maintain a desired light emission even when the tube is bent. | 2014-04-03 |
| 20140091336 | ELECTRONIC DEVICES WITH COMPONENT MOUNTING STRUCTURES - Electronic devices are provided that have components. A housing protrusion may be interposed between a display cover layer and display components. A button may have a button member. A support structure for a dome switch in the button may have a screw hole. A housing may have screw holes through which a screw passes. The screw may also pass through the screw hole of the support structure to hold the switch structure near the button member. A clip may have a spring. A metal plate may prevent the clip from becoming worn by the spring. A display may be mounted on a ledge in a device housing. The ledge may have gaps with supports and removed corners. | 2014-04-03 |
| 20140091337 | LIGHT-EMITTING DEVICE, LIGHT-EMITTING DEVICE ASSEMBLY, AND ELECTRODE-BEARING SUBSTRATE - A light-emitting device assembly includes a substrate, an optical semiconductor element mounted on the surface of the substrate, an encapsulating layer formed on the substrate surface to encapsulate the optical semiconductor element, and an electrode formed on the substrate surface to be electrically connected to the optical semiconductor element. On the substrate, only an encapsulating region and an electrode region are formed, the encapsulating region including the optical semiconductor element and being defined by the encapsulating layer, and the electrode region being defined by the electrode exposed from the encapsulating layer. | 2014-04-03 |
| 20140091338 | LIGHT EMITTING DIODE - Exemplary embodiments of the present invention relate to light emitting diodes including a plurality of light emitting cells on a substrate to be suitable for AC driving. The light emitting diode includes a substrate and a plurality of light emitting cell formed on the substrate. Each light emitting cell includes a first region at a boundary of the light emitting cell and a second region opposite to the first region. A first electrode pad is formed in the first region of the light emitting cell. A second electrode pad having a linear shape is disposed to face the first electrode pad while regionally defining a peripheral region together with the boundary of the second region. A wire connects the first electrode pad to the second electrode pad between two adjacent light emitting cells. | 2014-04-03 |
| 20140091339 | SEMICONDUCTOR DEVICE, DISPLAY, AND ELECTRONIC APPARATUS - A semiconductor device having a substrate is disclosed. The substrate includes a first set of inner edges and a second set of inner edges cooperating with the first set of inner edges. The second set of inner edges is positioned outside the first set of inner edges with respect to a cavity formed by the first inner edges and the second inner edges by a pre-defined distance. The substrate further includes a layer within the cavity, including a dried liquid material formed from a liquid deposited within the cavity. The layer within the cavity is formed between the respective first inner edges and the second inner edges. The semiconductor device may be implemented in a display of an electronic device. | 2014-04-03 |
| 20140091340 | PLASTIC LEADED CHIP CARRIER WITH DIAGONALLY ORIENTED LIGHT SOURCES FOR FINE-PITCHED DISPLAY - A Plastic Leaded Chip Carrier (PLCC) package is disclosed. The PLCC package is configured to support a plurality of light sources. The light sources may be mounted on a mounting section of the PLCC package's lead frame and the mounting section of the lead frame may extend diagonally with respect to the housing of the lead frame. | 2014-04-03 |
| 20140091341 | DEVICE AND METHOD FOR AN LED WITH A CONVEX COVER - An approach is provided for a device and a method for an LED with a convex cover, which comprises multiple LED diodes compartmentalized to at least one group. Each group of LED diodes forms an electrical loop on a PCB, and has at least one first LED diode on a center region and at least two second LED diodes on a periphery region. Each second LED diode is connected to the first LED diode in series, and connected to the other second LED diode in parallel. The power of the first LED diode is higher than the second LED diode. | 2014-04-03 |
| 20140091342 | Lighting Device - A lighting device using an electroluminescent material, in which color mixing and dimming can be performed by a simple method, is provided. A lighting device including a first light-emitting element and a second light-emitting element which emits light having a wavelength longer than that of light emitted from the first light-emitting element and starts to emit light at a lower voltage than the first light-emitting element, is provided. The first light-emitting element and the second light-emitting element are connected in parallel, whereby a mixed color of emission colors of the first light-emitting element and the second light-emitting element is controlled by a voltage applied to the first light-emitting element and the second light-emitting element. | 2014-04-03 |
