10th week of 2016 patent applcation highlights part 56 |
Patent application number | Title | Published |
20160072007 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nanostructure semiconductor light emitting device including a base layer formed of a first conductivity-type nitride semiconductor and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer. Each of the plurality of light emitting nanostructures includes a nanocore formed of the first conductivity-type nitride semiconductor, a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium, an active layer disposed on the stress control layer and including a nitride semiconductor containing indium, and a second conductivity-type nitride semiconductor layer disposed on the active layer. | 2016-03-10 |
20160072008 | SURFACE-PASSIVATED SILICON QUANTUM DOT PHOSPHORS - Phosphors formed using silicon nanoparticles are provided. The phosphors exhibit bright fluorescence and high quantum yield, making them ideal for lighting applications. Methods for making the silicon phosphors are also provided, along with lighting devices that incorporate the silicon phosphors. | 2016-03-10 |
20160072009 | SEMICONDUCTOR STRUCTURE - A semiconductor structure includes a silicon substrate, an aluminum nitride layer and a plurality of grading stress buffer layers. The aluminum nitride layer is disposed on the silicon substrate. The grading stress buffer layers are disposed on the aluminum nitride layer. Each grading stress buffer layer includes a grading layer and a transition layer stacked up sequentially. A chemical formula of the grading layer is Al | 2016-03-10 |
20160072010 | SEMICONDUCTOR STRUCTURE - A semiconductor structure includes a substrate, an aluminum nitride layer, plural of grading stress buffer layers and a superlattice structure layer. The aluminum nitride layer is disposed on the substrate. The grading stress buffer layers are disposed on the aluminum nitride layer. Each grading stress buffer layer includes a grading layer and a transition layer stacked up sequentially. A chemical formula of the grading layer is Al | 2016-03-10 |
20160072011 | LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME - Disclosed are a light emitting diode (LED), an LED module including the same, and a method of fabricating the same. The light emitting diode includes a first conductive-type semiconductor layer; a second conductive-type semiconductor layer; an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; a first electrode pad region electrically connected to the first conductive-type semiconductor layer; a second electrode pad region electrically connected to the second conductive-type semiconductor layer; and a spark gap formed between a first leading end electrically connected to the first electrode pad region and a second leading end electrically connected to the second electrode pad region. The spark gap can achieve electrostatic discharge protection of the light emitting diode. | 2016-03-10 |
20160072012 | LIGHT-EMITTING DIODE - A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a current controlling structure, a first electrode, and a second electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling structure is joined with the first type semiconductor layer, and the current controlling structure has at least one current-injecting zone therein. The first electrode is electrically coupled with the first type semiconductor layer through the current-injecting zone of the current controlling structure. The second electrode is electrically coupled with the second type semiconductor layer. | 2016-03-10 |
20160072013 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a stacked body, a first electrode, a second electrode, a first interconnection section, a second interconnection section, an insulating layer, a first transmissive layer, a first reflection film, and a second transmissive layer. The stacked body includes a first layer having a rough surface, a second layer, and a light emitting layer. The first transmissive layer is provided on a side of the stacked body. The first reflection film is provided between the first transmissive layer and the insulating layer. The second transmissive layer is provided on the rough surface of the first layer and on the first transmissive layer, and includes a plurality of particles. Surface roughness of a surface on the second transmissive layer side of the first transmissive layer is smaller than surface roughness of the rough surface of the first layer. | 2016-03-10 |
20160072014 | SURFACE TREATMENT OF A SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light-emitting device includes a semiconductor structure having a light-emitting region. A surface of the semiconductor structure has flattened peaks. | 2016-03-10 |
20160072015 | VERTICAL ULTRAVIOLET LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein are a vertical ultraviolet light emitting device including: a p-type semiconductor layer including Al; an active layer positioned on the p-type semiconductor layer and including the Al; an n-type semiconductor layer positioned on the active layer and including the Al; a metal contact layer positioned on the n-type semiconductor layer and doped with an n type; and a pad formed on the metal contact layer, wherein the metal contact layer has an Al content lower than that of the n-type semiconductor layer, and a method for manufacturing the same. According to the exemplary embodiments of the present invention, the metal contact layer is formed on the n-type semiconductor layer to allow the metal contact layer instead of the n-type semiconductor layer including AlGaN to act as the contact layer, thereby effectively improving the n type contact characteristics of the vertical ultraviolet light emitting device. | 2016-03-10 |
20160072016 | SOLID-STATE LIGHT EMITTERS HAVING SUBSTRATES WITH THERMAL AND ELECTRICAL CONDUCTIVITY ENHANCEMENTS AND METHOD OF MANUFACTURE - Solid-state lighting devices (SSLDs) including a carrier substrate with conductors and methods of manufacturing SSLDs. The conductors can provide (a) improved thermal conductivity between a solid-state light emitter (SSLE) and a package substrate and (b) improved electrical conductivity for the SSLE. In one embodiment, the conductors have higher thermal and electrical conductivities than the carrier substrate supporting the SSLE. | 2016-03-10 |
20160072017 | VERTICAL TOPOLOGY LIGHT EMITTING DEVICE - A vertical topology light emitting device comprises a metal support structure; an adhesion structure on the metal support structure, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer; a metal layer on the adhesion structure, wherein the adhesion structure is thicker than the metal layer; a GaN-based semiconductor structure on the metal layer, wherein the GaN-based semiconductor structure has a thickness less than 5 micrometers; a multi-layered electrode structure on the GaN-based semiconductor structure; and a protective layer on a side surface and a top surface of the GaN-based semiconductor structure, wherein the protective layer is further disposed on the multi-layered electrode structure. | 2016-03-10 |
20160072018 | LIGHT EMITTING DEVICE WITH IMPROVED CURRENT SPREADING PERFORMANCE AND LIGHTING APPARATUS INCLUDING THE SAME - Disclosed herein is a light emitting device exhibiting improved current spreading. The disclosed light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type and second conductivity type semiconductor layers, a first electrode disposed on the first conductivity type semiconductor layer, and a second electrode disposed on the second conductivity type semiconductor layer. The light emitting structure includes a mesa etching region where the second conductivity type semiconductor layer, active layer, and first conductivity type semiconductor layer are partially etched, thereby exposing a portion of the first conductivity type semiconductor layer. The first electrode is disposed on the exposed portion of the first conductivity type semiconductor layer. A first electrode layer is disposed between the second conductivity type semiconductor layer and the second electrode. A second electrode layer is disposed between portions of the first electrode layer spaced from each other at opposite sides of the mesa etching region. | 2016-03-10 |
20160072019 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element of an embodiment includes a laminated body having first, second, and third semiconductor layers stacked on each other in a first direction, the third semiconductor layer being between the first and second semiconductor layers in the first direction. The laminated body includes a first region and a second region spaced from the first region a second direction which intersects the first direction. The first electrode is electrically connected to the first semiconductor layer. The second electrode is disposed between the first region and the second region along the second direction. The first conductive layer electrically connects the second semiconductor layer and the second electrode to each other. An outer edge of the first conductive layer is positioned inside an outer edge of the laminated body. | 2016-03-10 |
20160072020 | ILLUMINATION METHOD AND LIGHT-EMITTING DEVICE - To provide an illumination method and a light-emitting device which are capable of achieving, under an indoor illumination environment where illuminance is around 5000 lx or lower when performing detailed work and generally around 1500 lx or lower, a color appearance or an object appearance as perceived by a person, will be as natural, vivid, highly visible, and comfortable as though perceived outdoors in a high-illuminance environment, regardless of scores of various color rendition metric. Light emitted from the light-emitting device illuminates an object such that light measured at a position of the object satisfies specific requirements. A feature of the light-emitting device is that light emitted by the light-emitting device in a main radiant direction satisfies specific requirements. | 2016-03-10 |
20160072021 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A highly reliable light-emitting device and a manufacturing method thereof are provided. A light-emitting element and a terminal electrode are formed over an element formation substrate; a first substrate having an opening is formed over the light-emitting element and the terminal electrode with a bonding layer provided therebetween; an embedded layer is formed in the opening; a transfer substrate is formed over the first substrate and the embedded layer; the element formation substrate is separated; a second substrate is formed under the light-emitting element and the terminal electrode; and the transfer substrate and the embedded layer are removed. In addition, an anisotropic conductive connection layer is formed in the opening, and an electrode is formed over the anisotropic conductive connection layer. The terminal electrode and the electrode are electrically connected to each other through the anisotropic conductive connection layer. | 2016-03-10 |
20160072022 | LED PACKAGES WITH CHIPS HAVING INSULATED SURFACES - Emitter packages are disclosed that can include an insulating layer covering the emitter, such as between the emitter's primary emission surface and a lens or encapsulant. The packages can comprise a submount with an emitter flip-chip mounted such that the diode region is between the emitter's non-insulating and/or conductive substrate and the submount. The submount can then be covered with a thin insulating layer. The same or another insulating layer can cover other electrically active surfaces on the submount. By insulating the electrically active surfaces of the emitter and, in some embodiments, other electrically active surfaces, the package can meet UL8750 class 4 enclosure standards even if it does not meet the lens adhesion criteria. This can enable the use of cheaper and/or more optically efficient materials at the fixture level, since the package itself meets class 4 standards. | 2016-03-10 |
20160072023 | OPTO-ELECTRONIC MODULE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a device ( | 2016-03-10 |
20160072024 | LIGHTING APPARATUS - A lighting apparatus includes a substrate, a plurality of light-emitting dies disposed on the substrate and spaced apart from one another, a continuous structure disposed over the substrate and covering the light-emitting dies within, and a filler. The light-emitting dies each are covered with an individual phosphor coating and the filler is between the continuous structure and the phosphor coating for each of the light-emitting dies. The lighting apparatus has a substantially white appearance when the plurality of light-emitting dies is turned off. | 2016-03-10 |
20160072025 | APPARATUS AND METHOD FOR MODULATING PHOTON OUTPUT OF A QUANTUM DOT LIGHT EMITTING DEVICE - An apparatus is provided for modulating the photon output of a plurality of free standing quantum dots. The apparatus comprises a first electron injection layer ( | 2016-03-10 |
20160072026 | LIGHT EMITTING DEVICE UTILIZING SEMICONDUCTOR AND MANUFACTURING METHOD OF THE SAME - An LED light emitting apparatus | 2016-03-10 |
20160072027 | OPTICAL SYSTEMS FABRICATED BY PRINTING-BASED ASSEMBLY - Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity. | 2016-03-10 |
20160072028 | PACKAGE AND LIGHT-EMITTING DEVICE - A package includes a resin molded body, a first lead electrode, a second lead electrode, and a recess portion. The recess portion is provided on a first side of the resin molded body and a light-emitting element is to be provided in the recess portion. The recess portion includes a bottom portion, a top portion, and a side wall. The bottom portion includes an element mount region and a wire connection region. An upper surface of the first lead electrode is exposed from the resin molded body in the element mount region and the element mount region has an outer peripheral shape in accordance with an outer peripheral shape of the light-emitting element when viewed in a height direction. The wire connection region is provided adjacent to the element mount region and is smaller than the element mount region. | 2016-03-10 |
20160072029 | OPTO-ELECTRONIC MODULES WITH MASKING FEATURE FOR REDUCING THE VISIBILITY OF INTERIOR COMPONENTS - Opto-electronic modules include masking features that can help reduce the visibility of interior components or enhance the outer appearance of the module or of an appliance incorporating the module as a component. The modules can include an optical diode or saturable optical absorber. | 2016-03-10 |
20160072030 | OPTICAL ELEMENT AND OPTOELECTRONIC COMPONENT - An optical element has a first surface and a second surface opposite the first surface. The first surface is subdivided into at least one first segment and a second segment. The segments in each case adjoin a midpoint of the first surface. Each segment has a tooth structure having teeth extending along tooth extension directions. The tooth extension directions have bends at boundaries between the segments. | 2016-03-10 |
20160072031 | LIGHT EMITTING APPARATUS - A light emitting device including a contact layer, a blocking layer over the contact layer, a protection layer adjacent the blocking layer, a light emitter over the blocking layer, and an electrode layer coupled to the light emitter. The electrode layer overlaps the blocking layer and protection layer, and the blocking layer has an electrical conductivity that substantially blocks flow of current from the light emitter in a direction towards the contact layer. In addition, the protection layer may be conductive to allow current to flow to the light emitter or non-conductive to block current from flowing from the light emitter towards the contact layer. | 2016-03-10 |
20160072032 | LIGHT EMITTING DEVICE - A light-emitting device includes first and second lead frames spaced apart from each other, the first and second lead frames each comprising a top surface, an opposing bottom surface, and sidewalls arranged between the top surface and the bottom surface thereof, at least one of the first and second lead frames comprise three inset sidewalls that at least partially define a fixing space, the fixing space undercutting at least one of the first lead frame and second lead frame, a light-emitting diode chip arranged on the first surface of the first or second lead frame, a resin part disposed in the fixing space to support the first and second lead frames, and the first and second lead frames exposed to the outside through bottom surface. | 2016-03-10 |
20160072033 | Nano-Structured Porous Thermoelectric Generators - Methods and processes to fabricate thermoelectric materials and more particularly to methods and processes to fabricate nano-sized doped silicon-based semiconductive materials to use as thermoelectrics in the production of electricity from recovered waste heat. Substantially oxidant-free and doped silicon particulates are fractured and sintered to form a porous nano-sized silicon-based thermoelectric material. | 2016-03-10 |
20160072034 | METALS-SEMICONDUCTOR NANOWIRE COMPOSITES - When fabricating thermoelectric devices using bulk semiconductor materials and single crystal substrates, the performance of the thermoelectric device can be limited by the interdependence between electrical conductivity, Seebeck coefficient, and thermal conductivity in the bulk semiconductor material. Additionally, the properties of bulk semiconductor materials can lead to expensive, bulky, and complex power generation systems. Thermoelectric devices can be fabricated using a metals-semiconductor composite and epitaxial nanowire percolation network architecture. Low cost, mechanically flexible, highly scalable, and high performance thermoelectric devices can be achieved due to the flexibility with the host semiconductor material, nanoparticle material, diameter and length of the nanowires, density and size of the embedded nanoparticles, angle of intersection of the nanowires, and choice of epitaxial growth conditions and fabrication processes in the metals-semiconductor composite and epitaxial nanowire percolation network architecture. | 2016-03-10 |
20160072035 | THERMOELECTRIC GENERATOR - A thermoelectric generator includes a structure, thermoelectric devices, a hollow port member, electric wires, a shielding member, and a cooling unit. The structure defines an enclosed space between a high-temperature medium and a low-temperature medium, and the enclosed space is in a low-oxygen condition. The thermoelectric devices are placed in the enclosed space. The port member has one end portion to which the structure is connected so that the port member communicates with the enclosed space, and the port member has an opening in the other end portion thereof. The electric wires are inserted through the port member, and each wire has one end portion connected to the thermoelectric devices, and the other end portion pulled out to the outside of the port member through the opening. The shielding member is fitted in the port member, and the electric wires pass through the shielding member. The cooling unit is configured to cool the shielding member. | 2016-03-10 |
20160072036 | NANOFIBER-BASED THERMOELECTRIC GENERATOR MODULE, METHOD FOR MANUFACTURING THE SAME, AND ELECTROSPINNING APPARATUS FOR MANUFACTURING NANOFIBERS THEREFORE - The present invention provides a method of manufacturing a nanofiber-based thermoelectric generator module, the method comprising: an electrode formation step of forming a plurality of electrodes and a plurality of second electrodes so as to be spaced apart from and opposite to each other in an alternately staggered arrangement relative to each other; a first nanofiber arrangement step of arranging a first nonofiber including an n-type or p-type semiconductor; and a second nanofiber arrangement step of arranging a second nonofiber including a semiconductor of a type different from the type of the semiconductor forming the first nanofiber, a nanofiber-based thermoelectric generator module manufactured by the method, and an electrospinning apparatus of manufacturing nanofibers for the nanofiber-based thermoelectric generator module. | 2016-03-10 |
20160072037 | THERMOELECTRIC DEVICES WITH INTERFACE MATERIALS AND METHODS OF MANUFACTURING THE SAME - Thermoelectric devices with interface materials and methods of manufacturing the same are provided. A thermoelectric device can include at least one shunt, at least one thermoelectric element in thermal and electrical communication with the at least one shunt, and at least one interface material between the at least one shunt and the at least one thermoelectric element. The at least one interface material can comprise a plurality of regions comprising a core material with each region separated from one another and surrounded by a shell material. The interface material can be configured to undergo deformation under (i) a normal load between the at least one shunt and the at least one thermoelectric element or (ii) a shear load between the at least one shunt and the at least one thermoelectric element. The deformation can reduce interface stress between the at least one shunt and the at least one thermoelectric element. | 2016-03-10 |
20160072038 | THERMOELECTRIC CONVERSION ELEMENT - A thermoelectric conversion element comprises: a substrate; an insulating ferromagnetic layer provided on the substrate and having a magnetization fixed in one direction; and a nonmagnetic metal layer provided on the ferromagnetic layer. The substrate is configured from an organic type material whose thermal conductivity is not less than 0.15 W/Km and not more than 1.5 W/Km, whose Young's modulus is not less than 0.2 Gpa and not more than 7 Gpa, and whose film thickness is 100 μm or less. | 2016-03-10 |
20160072039 | DEVICE USING A PIEZOELECTRIC ELEMENT AND METHOD FOR MANUFACTURING THE SAME - An inkjet printing head 1 includes a pressure chamber (cavity) | 2016-03-10 |
20160072040 | Bender Bar Transducer Having Stacked Encapsulated Actuators - A bender bar transducer having stacked encapsulated actuators provides improved acoustic power over a wider frequency range, low applied voltage requirements and consistent part-to-part performance. | 2016-03-10 |
20160072041 | MONOLITHIC PZT ACTUATOR, STAGE, AND METHOD FOR MAKING - A monolithic, bulk piezoelectric actuator includes a bulk piezoelectric substrate having a starting top surface and an opposing starting bottom surface and a at least two electrodes operatively disposed on the bulk piezoelectric substrate consisting of at least two discrete electrodes disposed on either/both of the starting top surface and the starting bottom surface and at least one electrode disposed on the respective other starting bottom surface or starting top surface. A stage includes a base, at least two of the monolithic, bulk piezoelectric actuators disposed on the base, a movable platform disposed on the base, and a respective number of deformable connectors each having a first connection to a respective one of the piezoelectric actuators and a second connection to a respective portion of the movable platform. A method for monolithically making a monolithic, bulk piezoelectric actuator involves a direct write micropatterning technique. | 2016-03-10 |
20160072042 | PIEZOELECTRIC SENSOR FOR BICYCLE COMPONENT - A piezoelectric material contains ferroelectric particles and an adhesive resin. The ratio of the ferroelectric particles relative to the total mass of the ferroelectric particles and the adhesive resin is 40 mass % or greater and 98 mass % or less. | 2016-03-10 |
20160072043 | MAGNESIUM OXIDE CAPPING WITH A SHORTED PATH FOR PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICES - A magnetic tunnel junction (MTJ) device includes a pinned layer, a tunnel barrier layer on the pinned layer, and a free layer on the tunnel barrier layer. The MTJ device also includes a perpendicular magnetic anisotropic (PMA) enhancement layer on the free layer, a capping layer on the PMA enhancement layer, and a conductive path electrically shorting the capping layer, the PMA enhancement layer and the free layer. A method of fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes forming a capping layer, a perpendicular magnetic anisotropic (PMA) enhancement layer and a free layer. The method also includes forming a conductive layer to short the capping layer, the PMA enhancement layer and the free layer. | 2016-03-10 |
20160072044 | MULTI-BIT FERROELECTRIC MEMORY DEVICE AND METHODS OF FORMING THE SAME - Multi-bit ferroelectric memory devices and methods of forming the same are provided. One example method of forming a multi-bit ferroelectric memory device can include forming a first ferroelectric material on a first side of a via, removing a material to expose a second side of the via, and forming second ferroelectric material on the second side of the via at a different thickness compared to the first side of the via. | 2016-03-10 |
20160072045 | MAGNETIC MEMORY AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a magnetic memory is disclosed. The magnetic memory comprises an interconnect layer, a first conductive layer on the interconnect layer, the first conductive layer including a metal, an oxide layer on the first conductive layer, a second conductive layer on the oxide layer, a magnetoresistive element on the second conductive layer, the magnetoresistive element including a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first and second magnetic layers, and a deposited material on a sidewall of the oxide layer, the deposited material including the metal. | 2016-03-10 |
20160072046 | MAGNETORESISTIVE ELEMENT AND MANUFACTURING METHOD THEREOF - According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes an underlayer containing aluminum (Al), nitrogen (N) and X. The X is an element other than Al and N. A first magnetic layer is provided on the underlayer. A nonmagnetic layer is provided on the first magnetic layer. A second magnetic layer is provided on the nonmagnetic layer. | 2016-03-10 |
20160072047 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, a semiconductor memory device includes a lower electrode, an MTJ element, a cap layer and an upper electrode. The lower electrode is provided above a semiconductor substrate. The MTJ element is provided above the lower electrode. The cap layer is provided above the MTJ element and is oxygen-free. The upper electrode is connected to the cap layer. | 2016-03-10 |
20160072048 | MAGNETIC MEMORY AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes a substrate, an electrode provided on the substrate, a first insulating film surrounding a side surface of the electrode. The first insulating film contains oxygen. The magnetic memory further includes a second insulating film provided between the electrode and the first insulating film, and surrounding the side surface of the electrode. The second insulating film contains nitrogen. A magnetoresistance effect element is provided on the electrode. | 2016-03-10 |
20160072049 | MAGNETORESISTIVE ELEMENT - According to one embodiment, a magnetoresistive element includes a first magnetic layer as a reference layer, a second magnetic layer as a storage layer, a nonmagnetic insulating layer between the first and second magnetic layers, and an antiferromagnetic conductive layer which is adjacent to a side opposite to the nonmagnetic insulating layer side of the second magnetic layer in a vertical direction in which the first and second magnetic layers are stacked. The second magnetic layer includes an area which is magnetically coupled with the antiferromagnetic conductive layer and which has a magnetization direction parallel with a magnetization direction of the second magnetic layer. | 2016-03-10 |
20160072050 | MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a magnetic memory device includes a first stack structure including a first magnetic layer, and a first nonmagnetic layer provided on the first magnetic layer, a second stack structure including a second magnetic layer provided on the first nonmagnetic layer, a second nonmagnetic layer provided on the second magnetic layer, and a top conductive layer provided on the second nonmagnetic layer, and a sidewall conductive layer provided on a sidewall of the second stack structure. | 2016-03-10 |
20160072051 | MAGNETIC MEMORY AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes a substrate and an underlying layer provided on the substrate. The underlying layer includes a first underlying layer and a second underlying layer surrounding the first underlying layer. The first and second underlying layers contain a metal of a same type. The first underlying layer includes a lower part which is greater than the upper part in width. The magnetic memory further includes a magnetoresistive element provided on the underlying layer. | 2016-03-10 |
20160072052 | MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a magnetoresistive element includes a first magnetic layer having an invariable magnetization, a second magnetic layer having a variable magnetization, and an insulating layer between the first and second magnetic layers. The insulating layer includes at least one of a nickel oxide, an iron oxide, a cobalt oxide, a manganese oxide, LaMnO | 2016-03-10 |
20160072053 | STORAGE ELEMENT, MEMORY AND ELECTRONIC APPARATUS - A storage element is provided. The storage element includes a memory layer having a first magnetization state of a first material; a fixed magnetization layer having a second magnetization state of a second material; an intermediate layer including a nonmagnetic material and provided between the memory layer and the fixed magnetization layer; wherein the first material includes Co—Fe—B alloy, and at least one of a non-magnetic metal and an oxide. | 2016-03-10 |
20160072054 | METHOD TO MAKE MRAM WITH SMALL CELL SIZE - A method to make magnetic random access memory with extremely small cell size is provided. Using atomic layer deposition (ALD) technique, a very thin film of hard mask material is uniformly grown on the vertical spatial walls of a pre-form. Stand alone hard mask is formed after removing the pre-form. Array of magnetic memory cells are formed by reactive ion etch (RIE) or ion milling using such small hard mask. This way, the dimension of the hard mask is no longer limited by photolithography tool capability, instead, it is controlled by ALD-grown hard mask film thickness which can be made extremely thin. | 2016-03-10 |
20160072055 | MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a manufacturing method of a semiconductor memory device includes the following steps. The method includes forming a first magnetic layer, a second magnetic layer, and an insulating layer therebetween, forming a mask layer on the second magnetic layer, etching the second magnetic layer, the insulating layer, and the first magnetic layer using the mask layer as a mask and forming a magnetic tunnel junction (MTJ) element, and performing oxidation a sidewall of the MTJ element with H | 2016-03-10 |
20160072056 | MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a method of manufacturing a magnetic memory device, includes forming a stack film including a magnetic layer on an underlying area, forming a hard mask on the stack film, forming a stack structure by etching the stack film using the hard mask as a mask, forming a first protective insulating film on a side surface of the stack structure, and performing an oxidation treatment. | 2016-03-10 |
20160072057 | INTEGRATED MAGNETORESISTIVE SENSOR, IN PARTICULAR THREE-AXIS MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREOF - An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane. | 2016-03-10 |
20160072058 | THREE-DIMENSIONAL ARRAY OF RE-PROGRAMMABLE NON-VOLATILE MEMORY ELEMENTS HAVING VERTICAL BIT LINES - A three-dimensional array especially adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. Bit lines to which the memory elements of all planes are connected are oriented vertically from the substrate and through the plurality of planes. | 2016-03-10 |
20160072059 | PHASE-CHANGE MEMORY DEVICE HAVING PHASE-CHANGE REGION DIVIDED INTO MULTI LAYERS AND OPERATING METHOD THEREOF - A phase-change memory device including a phase-change region divided into multi layers and an operation method thereof are provided. The device includes a first phase-change layer to which a current is provided from a heating electrode, and a second phase-change layer formed with continuity to the first phase-change layer and having a different width from the first phase-change layer, and to which a current is provided from the heating electrode. The first and second phase-change layers include materials selected from a first group consisting of GeTe, GST415, GST315, GST225, GST124, GST147, and GST172 or a second group consisting of InSbSe, SnGeSe, GST, SnSbSe, and SiSbSe. The second phase-change layer includes a material different from the first phase-change layer, which is selected from the same group as the first phase-change layer and has smaller resistivity than the first phase-change layer. | 2016-03-10 |
20160072060 | MEMORY DEVICE - A memory device according to an embodiment, includes a conductive member, a first interconnect, a second interconnect, a first memory element, a first connecting member, a first via and a first contact. The first interconnect is provided on the conductive member. The first interconnect extends in a first direction. The second interconnect is provided on the conductive member above or below the first interconnect. The second interconnect extends in a second direction crossing the first direction. The first memory element is connected between the first interconnect and the second interconnect. The first connecting member is made of the same material as the first interconnect. The first connecting member is separated from the first interconnect. The first via connects the second interconnect to the first connecting member. The first contact connects the first connecting member to the conductive member. | 2016-03-10 |
20160072061 | NON-VOLATILE MEMORY DEVICE - According to an embodiment, a non-volatile memory device includes a first interconnection, a second interconnection closest to the first interconnection in a first direction, rectifying portions arranged in the first direction between the first interconnection and the second interconnection, and a first resistance change portion arranged between adjacent ones of the rectifying portions in the first direction. Each of the rectifying portions includes a first metal oxide layer and a second metal oxide layer. | 2016-03-10 |
20160072062 | AL-W-O STACK STRUCTURE APPLICABLE TO RESISTIVE RANDOM ACCESS MEMORY - An Al-W-O stack structure applicable to a resistive random access memory according to an embodiment of the invention comprises a tungsten top electrode, a tungsten oxide layer formed on the tungsten lower electrode, an aluminum oxide layer formed on the tungsten oxide layer and an aluminum top electrode formed on the aluminum oxide layer. The invention utilizes the different properties of two metals, namely aluminum and tungsten in bonding with oxygen ions, to obtain a resistive random access memory with more stable performances, lower power consumption and larger high resistance-low resistance ratio. | 2016-03-10 |
20160072063 | MEMORY STRUCTURE AND PREPARATION METHOD THEREOF - A memory structure includes a control unit and a memory unit electrically connected to the control unit. The control unit includes a source and a drain; an active layer in contact with a portion of the source and a portion of the drain; a gate layer; and a gate insulation layer disposed between the active layer and the gate layer. The memory unit includes a bottom electrode layer; a top electrode layer; and a resistive switching layer interposed between the bottom electrode layer and the top electrode layer, which the resistive switching layer and the active layer are formed of aluminum zinc tin oxide (AZTO). | 2016-03-10 |
20160072064 | ADAMANTANE COMPOUND FOR ORGANIC ELECTROLUMINESCENT ELEMENTS, AND ORGANIC ELECTROLUMINESCENT ELEMENT - Provided are an organic EL device practically satisfactory in terms of its light-emitting characteristics, driving voltage, and durability, and a compound for an organic EL device to be used in the device. The organic EL device has a structure in which an anode, a plurality of organic layers including a light-emitting layer, and a cathode are laminated on a substrate, and the organic EL device contains, in at least one organic layer selected from the light-emitting layer, a hole-transporting layer, an electron-transporting layer, a hole-blocking layer, and an electron-blocking layer, an adamantane compound having at least one triarylborane structure in a molecule thereof as the compound for an organic EL device. | 2016-03-10 |
20160072065 | DEPOSITION APPARATUS AND METHOD OF DEPOSITING THIN-FILM OF ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE DEPOSITION APPARATUS - Provided is a deposition apparatus including a deposition source including a plurality of nozzles that spray a deposition material onto a substrate; a mask disposed between the substrate and the deposition source and separated from the substrate, and including a plurality of first openings through which the deposition material passes; and at least one deposition incident angle adjusting plate disposed between the mask and the deposition source and including a plurality of second openings for adjusting a deposition incident angle of the deposition material that is sprayed from the plurality of nozzles; wherein the at least one deposition incident angle adjusting plate is movable in a first direction toward the substrate or a second direction opposite the first direction, and the deposition incident angle adjusting plate is spaced apart from the nozzles. | 2016-03-10 |
20160072066 | DONOR MASK AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS USING THE SAME - A donor mask includes a base substrate, a light-to-heat conversion layer disposed on the base substrate and including a first upper surface portion and a second upper surface portion, and a reflection layer interposed between the base substrate and the light-to-heat conversion layer and including through holes corresponding to the first upper surface portion and the second upper surface portion. The first upper surface portion includes a first upper surface and a second upper surface connected to the first upper surface and inclined at an angle other than 90 degrees with respect to the first upper surface. | 2016-03-10 |
20160072067 | PRODUCTION METHOD FOR ORGANIC ELECTROLUMINESCENT ELEMENT - The present invention aims at providing a method for producing an organic electroluminescent element, by which a non-light-emitting region can be formed without any accompanying discoloration of a resin substrate. The method for producing an organic electroluminescent element includes a stacking step, in which a first electrode, an organic functional layer and a second electrode are formed by stacking on a resin substrate, and a light irradiation step, in which a prescribed region of the organic functional layer is irradiated with light being free from wavelength components at 340 nm or less. | 2016-03-10 |
20160072068 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND TRANSISTOR ARRAY - Provided is a method of manufacturing a thin film transistor satisfying the relation of L<5 μm. The method includes a process of forming a streak portion by performing transfer printing on a support using a member to be transferred which is provided with an ink streak portion for forming source and drain electrodes and has mold releasability, and baking the streak portion to thereby form the source electrode constituted by a conductor and the drain electrode constituted by a conductor. In the method manufacturing a thin film transistor in which the source and drain electrodes obtained above, a semiconductor layer, an insulator layer, and a gate electrode constituted by a conductor are laminated, after the baking, in a laminated cross section of the thin film transistor to be manufactured is set to A and a channel length thereof is set to L, the ink streak portion is provided so as to satisfy the condition of L/A≧0.05. | 2016-03-10 |
20160072069 | ORGANIC ELECTROLUMINESCENT ELEMENT - The objective of the present invention is to provide an organic electroluminescent element which exhibits excellent light transmitting properties by having an intermediate electrode that is formed as a thin film, and which is suppressed in disconnection or resistance increase of the intermediate electrode, thereby being ensured with respect to electrical conductivity. This organic EL element ( | 2016-03-10 |
20160072070 | POLYMERIC BLENDS AND RELATED OPTOELECTRONIC DEVICES - The present invention relates to all-polymer blends including an electron-acceptor polymer and an electron-donor polymer, capable of providing improved device performance, for example, as measured by power conversion efficiency, when used in photovoltaic cells. | 2016-03-10 |
20160072071 | Photoelectric Conversion Element, Photoelectric Conversion Element Having Storage/Discharge Function, and Secondary Battery - A photoelectric conversion element having storage/discharge ability has a substrate layer that is formed of a conductive metal and is connected to a minus electrode of output electrodes, a collector electrode that is formed by being joined to one surface of the substrate layer, an n-type compound semiconductor layer that is formed of a dielectric composition containing a fullerene and is formed by being connected to the collector electrode, a p-type compound semiconductor layer that is formed in contact with the n-type compound semiconductor layer, and a pn-bulk layer that is formed between the n-type compound semiconductor layer and the p-type compound semiconductor layer and is intermittently in contact with the n-type compound semiconductor layer and the p-type compound semiconductor layer, and has a secondary battery arranged on the other surface of the substrate layer to provide a storage/discharge function. Also provided is the secondary battery preferably used herein. | 2016-03-10 |
20160072072 | CONDENSED CYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A condensed cyclic compound is represented by Formula 1: | 2016-03-10 |
20160072073 | ORGANIC COMPOSITION, AND ORGANIC OPTOELECTRONIC ELEMENT AND DISPLAY DEVICE - Disclosed are an organic compound represented by a combination of a moiety represented by Chemical Formula 1 and a moiety represented by Chemical Formula 2, an organic optoelectronic device and a display device including the organic compound. | 2016-03-10 |
20160072074 | Novel Compound, and Light Emitting Diode and Electronic Apparatus Comprising Same - In a novel compound, and a light emitting diode and an electronic apparatus including the same, the novel compound is represented by the following Chemical Formula 1. | 2016-03-10 |
20160072075 | ORGANIC LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME - An organic light emitting device and a display device including the same, the organic light emitting device including a first electrode; a light emitting layer on the first electrode; an electron transport layer on the light emitting layer; and a second electrode on the electron transport layer, wherein the electron transport layer includes a buffer layer, the buffer layer a buffer compound represented by the following Formula 1, | 2016-03-10 |
20160072076 | MATERIALS FOR ELECTRONIC DEVICES - The present application relates to a compound of a formula (I) which comprises a benzene group that is substituted with a group selected from carbazole derivatives and bridged amines and with an electron attracting group, wherein the two groups are located in the ortho-position in relation to one another. The present application further relates to the use of the compound of the formula (I) in an electronic device, and to a method of producing the compound of the formula (I). | 2016-03-10 |
20160072077 | ORGANIC LIGHT EMITTING DIODE AND ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE SAME - An organic light emitting element and an organic light emitting display, the organic light emitting element including a first compound represented by one of Chemical Formula 1-A to Chemical Formula 1-G, and a second compound represented by Chemical Formula 2: | 2016-03-10 |
20160072078 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device (OLED) includes a first electrode, a second electrode, an emission layer between the first electrode and the second electrode and including an electron-transporting host and a hole-transporting host, a hole transport region between the first electrode and the emission layer and including a hole transport layer, and an electron transport region between the emission layer and the second electrode and including an electron transport layer, wherein the OLED satisfies Equations 1 and 2 below: | 2016-03-10 |
20160072079 | HETERO-CYCLIC COMPOUND AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE SAME - The present specification provides a hetero-cyclic compound and an organic light emitting device including the same. | 2016-03-10 |
20160072080 | AMINE-BASED COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - An amine-based compound and an organic light-emitting device including the same, the amine-based compound being represented by Formula 1, below: | 2016-03-10 |
20160072081 | Transition metal complexes with carbene ligands and the use thereof in OLEDs - The present invention relates to iridium and platinum carbene complexes of the general formula (I), to OLEDs (Organic Light-Emitting Diodes) which comprise such complexes, to a device selected from the group consisting of illuminating elements, stationary visual display units and mobile visual display units comprising such an OLED, to the use of such a metal-carbene complex in OLEDs, for example as emitter, matrix material, charge transport material and/or charge or exciton blocker. | 2016-03-10 |
20160072082 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - Imidazophenanthridine ligands and metal complexes are provided. The compounds exhibit improved stability through a linking substitution that links a nitrogen bonded carbon of an imidizole ring to a carbon on the adjacent fused aryl ring. The compounds may be used in organic light emitting devices, particularly as emissive dopants, providing devices with improved efficiency, stability, and manufacturing. In particular, the compounds provided herein may be used in blue devices having high efficiency. | 2016-03-10 |
20160072083 | TRANSPARENT DIFFUSIVE OLED SUBSTRATE AND METHOD FOR PRODUCING SUCH A SUBSTRATE - A transparent diffusive OLED substrate includes (a) a transparent flat substrate made of mineral glass having a refractive index of between 1.45 and 1.65, (b) a rough low index layer including mineral particles, the mineral particles being attached to one side of the substrate by means of a sol-gel mineral binder, the mineral particles near, at or protruding from the mineral binder's surface creating a surface roughness characterized by an arithmetical mean deviation Ra comprised between 0.15 and 3 μm, the mineral particles and mineral binder both having a refractive index of between 1.45 and 1.65; (c) a high index layer made of an enamel having a refractive index comprised between 1.8 and 2.1 covering the rough low index layer. | 2016-03-10 |
20160072084 | SEMICONDUCTOR STRUCTURE AND METHOD FOR ITS PRODUCTION - The present invention relates to a semiconductor structure and a method for its production, the semiconductor structure comprising at least one conductor region and at least two semiconductor regions, which semiconductor regions are partly separated by the at least one conductor region. The at least one conductor region comprises openings extending between the semiconductor regions which are partly separated by the respective conductor region. The semiconductor regions comprise at least one organic semiconductor material having a specific HOMO energy level, in particular a DPP polymer. The conductor region comprises a conductive material having a specific work function, said combination of specific energy level and work function allowing for a simple preparation of the conductive region. The invention further relates to a method for providing such a semiconductor structure. | 2016-03-10 |
20160072085 | Organic-Inorganic Hybrid Multilayer Gate Dielectrics for Thin Film Transistors - Disclosed are organic-inorganic hybrid self-assembled multilayers that can be used as electrically insulating (or dielectric) materials. These multilayers generally include an inorganic primer layer and one or more bilayers deposited thereon. Each bilayer includes a chromophore or “π-polarizable” layer and an inorganic capping layer composed of zirconia. Because of the regularity of the bilayer structure and the aligned orientation of the chromophore resulting from the self-assembly process, the present multilayers have applications in electronic devices such as thin film transistors, as well as in nonlinear optics and nonvolatile memories. | 2016-03-10 |
20160072086 | THIN FILM TRANSISTOR, TRANSISTOR ARRAY, METHOD OF MANUFACTURING THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING TRANSISTOR ARRAY - Provided is a thin film transistor in which at least a support, source and drain electrodes constituted by a conductor, a semiconductor layer, an insulator layer, and a gate electrode constituted by a conductor are laminated in this order. In a laminated cross section of the thin film transistor, a difference between an electrode width of an electrode on a face coming into contact with the support and an electrode width thereof on a face which is opposite to the face coming into contact with the support and comes into contact with the semiconductor layer falls within a range of ±1 μm. When an arithmetic average roughness in the electrode width of the electrode on the face which is opposite to the face coming into contact with the support and comes into contact with the semiconductor layer is set to Ra, the relation of Ra≦10 nm is satisfied. | 2016-03-10 |
20160072087 | ORGANIC ELECTROCHEMICAL TRANSISTOR - A method of making a structure having a patterned a base layer and useful in the fabrication of optical and electronic devices including bioelectronic devices includes, in one embodiment, the steps of: a) providing a layer of a radiation-sensitive resin; b) exposing the layer of radiation-sensitive resin to patterned radiation to form a base layer precursor having a first pattern of exposed radiation-sensitive resin and a second pattern of unexposed radiation-sensitive resin; c) providing a layer of fluoropolymer in a third pattern over the base layer precursor to form a first intermediate structure; d) treating the first intermediate structure to form a second intermediate structure; and e) selectively removing either the first or second pattern of resin by contacting the second intermediate structure with a resin developing agent, thereby forming the patterned base layer. The method is capable of providing multilayer articles having almost any shape at high resolution without the need for expensive or damaging mechanical or laser cutting. | 2016-03-10 |
20160072088 | IMAGE PICKUP DEVICE AND ELECTRONIC APPARATUS - An image pickup device includes: a first electrode film; an organic photoelectric conversion film; a second electrode film; and a metal wiring film electrically connected to the second electrode film, the first electrode film, the organic photoelectric conversion film, and the second electrode film all provided on a substrate in this order, and the metal wiring film coating an entire side of the organic photoelectric conversion film. | 2016-03-10 |
20160072089 | Light Emitting Layer-Forming Solid Material, Organic Electroluminescent Device And Method For Producing The Same - A light emitting layer-forming solid material including at least one host material and at least one light-emitting material, wherein the light emitting layer-forming solid material is used for forming a white light emitting layer having a single layer structure by an evaporation method. | 2016-03-10 |
20160072090 | ORGANIC LIGHT-EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating an organic light-emitting device, including: providing a substrate; forming a control electrode on the substrate; forming an insulating layer covering at least a top surface of the control electrode; forming a hole transport layer pattern through printing on at least a part of the insulating layer; forming an organic light-emitting layer to be in contact with at least a part of a surface of the hole transport layer pattern; forming an electron transport layer pattern through printing to be in contact with at least a part of a surface of the organic light-emitting layer; and forming a first electrode and a second electrode respectively on the hole transport layer pattern and the electron transport layer pattern. | 2016-03-10 |
20160072091 | ORGANIC ELECTROLUMINESCENT DEVICE - An organic electroluminescent device includes an anode, an emission layer, an anode-side hole transport layer on the anode and the emission layer, the anode-side hole transport layer including an anode-side hole transport material and the anode-side hole transport layer being doped with an electron accepting material, an intermediate hole transport material layer between the anode-side hole transport layer and the emission layer, the intermediate hole transport layer including an intermediate hole transport material, and an emission layer-side hole transport material between the intermediate hole transport material layer and the emission layer and adjacent to the emission layer, the emission layer-side hole transport material layer including an emission layer-side hole transport material represented by the following General Formula (1): | 2016-03-10 |
20160072092 | ORGANIC LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING SAME - Disclosed is an organic light emitting device (OLED) that may include a first electrode including at least two conductive units, each of the at least conductive unit connected to a conductive connector of the first electrode; a second electrode facing the first electrode; an organic layer between the first electrode and the second electrode; an auxiliary electrode electrically connected to the conductive connector; and an insulating layer between the conductive connector and the auxiliary electrode, wherein the conductive connector overlaps the auxiliary electrode, with the insulating layer therebetween. | 2016-03-10 |
20160072093 | ORGANIC LED ELEMENT, METHOD OF MANUFACTURING ORGANIC LED ELEMENT - An organic LED element has a plurality of light emitting regions that are connected in series is provided, and the light emitting regions include a first electrode and a second electrode, between two adjacent light emitting regions. The first electrode of one light emitting region and the second electrode of another light emitting region are connected via a barrier layer, and a C concentration in an interface region between the first electrode and the barrier layer, or an interface region between the second electrode and the barrier layer, is 10 atomic % or lower. | 2016-03-10 |
20160072094 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode display includes: an organic light emitting diode panel; a first composite sheet including a first heat dissipation sheet and a first buffer sheet below the organic light emitting diode panel; a second composite sheet including a second heat dissipation sheet and a second buffer sheet and disposed below the organic light emitting diode panel and spaced apart from the first composite sheet; a first heat source below the first composite sheet; and a second heat source above the second composite sheet. | 2016-03-10 |
20160072095 | LIGHT EMITTING DEVICE - A light emitting device ( | 2016-03-10 |
20160072096 | SEALING FILM, METHOD FOR PRODUCING SAME AND FUNCTIONAL ELEMENT SEALED BY SEALING FILM - A method for producing a sealing film includes forming a first gas barrier layer on a surface of a substrate by applying an application liquid including a polysilazane, drying the application liquid, and performing a modification treatment. The method further includes forming a resin layer by applying a resin layer liquid comprising an ionic liquid onto the first gas barrier layer and drying the resin layer liquid. | 2016-03-10 |
20160072097 | Organic Optoelectronic Component - An organic optoelectronic component includes a first electrode which is made of an electrically conductive material, an active region which is made of an organic material, a second electrode which is made of an electrically conductive material, an encapsulating layer sequence which is made of a dielectric material, and a third electrode which is made of an electrically conductive material. The first electrode and the second electrode are arranged on different sides of the active region. The encapsulating layer sequence is arranged between the first electrode and the third electrode. The first electrode, the second electrode, and the third electrode can be contacted from outside the component. | 2016-03-10 |
20160072098 | PHOTO-CURING COMPOSITION AND ENCAPSULATED DEVICE COMPRISING SAME - The present invention relates to a photo-curing composition comprising (A) a photo-curable monomer, (B) a light-emitting substance, and (C) an initiator, wherein the light-emitting substance has a maximum light-emitting wavelength of about 400 to 500 nm during irradiation at a wavelength of 300-480 nm, and an encapsulated device comprising the same. | 2016-03-10 |
20160072099 | ELECTROLUMINESCENT APPARATUS, AND APPARATUS AND METHOD FOR MANUFACTURING SAME - In an organic EL display device (electroluminescent device) including an organic EL element (electroluminescent element), a first sealing film covers the organic El element, a second sealing film is formed on the first sealing film, and a third sealing film covers the first sealing film and the second sealing film. | 2016-03-10 |
20160072100 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - An organic light emitting diode display device and a manufacturing method thereof are provided. The organic light emitting diode display device includes a first flexible substrate, a second flexible substrate, a first barrier layer, a second barrier layer, an organic light emitting diode element, and a metal enclosing wall. The first barrier layer is disposed on the first flexible substrate, and the second barrier layer is disposed on the second flexible substrate. The organic light emitting diode element is disposed between the first barrier layer and the second barrier layer. The metal enclosing wall connects the first flexible substrate to the second flexible substrate and surrounds the organic light emitting diode element. | 2016-03-10 |
20160072101 | ORGANIC ELECTRONIC DEVICE - Provided are an organic electronic device (OED) and a use thereof. The OED, for example, a flexible device, may have excellent light extraction efficiency and durability. The OED may be applied to a lighting device or a light source for a display. | 2016-03-10 |
20160072102 | FLEXIBLE ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD OF FABRICATING THE SAME - A flexible organic electroluminescent device is disclosed which includes: a flexible substrate; a buffer layer entirely formed on the flexible substrate; a thin film transistor formed on the buffer layer and configured to include an active layer; a planarization film formed to cover the thin film transistor; an organic light emitting diode formed on the planarization film and configured to include a first electrode, an organic emission layer and a second electrode; and at least one silicon nitride layer formed above the active layer of the thin film transistor but under the planarization film and patterned into a plurality of island patterns. | 2016-03-10 |
20160072103 | BATTERY DISPOSED WITHIN GAS FILLED CASE - A battery encased in a noble gas is provided. An outer casing forming an airtight housing contains the battery. At least one noble gas is disposed within the airtight housing in between the battery and the outer casing. The noble gas prevents the battery from lighting on fire when an electrical discharge occurs. | 2016-03-10 |
20160072104 | ENERGY STORAGE APPARATUS - An energy storage apparatus includes: at least one energy storage device which includes an electrode assembly and a case for housing the electrode assembly; a spacer which is arranged adjacent to the case; and a holder which holds the energy storage device and the spacer. The energy storage device includes an insulating film which covers an outer surface of the case and is adhered to at least a portion of the outer surface of the case. The spacer has at least one of edges and corners thereof disposed at positions where the edges or the corners are in contact with the outer surface of the case with the insulating film interposed therebetween. | 2016-03-10 |
20160072105 | BATTERY COVER - A battery cover includes side walls that cover four side faces of the battery, and a first spacer provided at a top portion of the side walls for providing a space between the battery and the side wall. | 2016-03-10 |
20160072106 | Battery pack for a hand-held power tool - A battery pack for a hand-held power tool includes at least one interface for establishing a mechanical and/or electrical connection of the battery pack to a hand-held power tool and/or a charging device, the interface having a guide arrangement for attaching the battery pack on the hand-held power tool and/or the charging device along a contacting direction y, and at least four contact elements for electrical contacting of corresponding counter-contact elements on the hand-held power tool and/or corresponding counter-contact elements on the charging device. At least two contact elements are thereby situated offset from one another in the direction of the contacting direction y. | 2016-03-10 |