10th week of 2011 patent applcation highlights part 34 |
Patent application number | Title | Published |
20110059499 | MICROBIAL ALCOHOL PRODUCTION PROCESS - The invention relates to the production of alcohols by microbial fermentation, particularly to production of alcohols by microbial fermentation of substrates comprising CO. It more particularly relates to processes for the production of alcohols from their corresponding acids in the presence of a substrate comprising CO. In particular embodiments, a fermentation reaction producing acid(s) and optionally alcohol(s) is perturbed such that at least a portion one or more of acid(s) is converted to alcohol. | 2011-03-10 |
20110059500 | METHOD FOR SEPARATING IMMUNOMAGNETIC BEAD LABELED PARTICULATES - Disclosed is a method for separating immunomagnetic bead labeled particulates. A carrier board is formed with at least one flow channel structure, which includes an inner reservoir, an outer reservoir, and at least one micro flow channel in communication with the inner reservoir and the outer reservoir. The method includes labeling target particulates with immunomagnetic bead, introducing a sample fluid into the inner reservoir, and applying a magnetic force and a driving force, wherein the driving force drives the particulates not labeled with immunomagnetic bead to flow through the micro flow channel to the outer reservoir, while the magnetic force attracts the particulates labeled with the immunomagnetic bead to retain in the inner reservoir. The driving force may be centrifugal force, pressure, or surface tension. | 2011-03-10 |
20110059501 | Protein Glycosylation - The present invention relates to methods for glycosylating a protein in which the protein is modified to include an alkyne and/or an azide group. The invention further relates to a protein glycosylated by these methods. | 2011-03-10 |
20110059502 | MULTIPLE DOMAIN PROTEINS - Described herein are methods and compositions for generating and using fusion proteins. | 2011-03-10 |
20110059503 | Compositions of variant biocatalysts for preparing enantiopure amino acids - A composition of variant biocatalysts, specifically variants of | 2011-03-10 |
20110059504 | ENGINEERED TRANSGLUTAMINASE BARREL PROTEINS - Disclosed herein are methods and compositions related to engineered fragments of the human transglutaminase-related protein family, described herein as engineered transglutaminase barrel proteins (ETBPs), that have utility as high affinity, high selectivity target-binding proteins offering advantages as antibody equivalents for therapeutic, analytical, manufacturing and research purposes. ETBPs differ from naturally occurring human transglutaminase fragments by the addition, deletion, replacement and/or substitution of the naturally occurring amino acid sequence. ETBPs can be easily expressed in prokaryotic cells and in many cases can be purified by a simple solubilization and precipitation method. | 2011-03-10 |
20110059505 | Polymerases for nucleotide analogue incorporation - Compositions that include polymerases with features for improving entry of nucleotide analogues into active site regions and for coordinating with the nucleotide analogues in the active site region are provided. Methods of making the polymerases and of using the polymerases in sequencing and DNA replication and amplification as well as kinetic models of polymerase activity and computer-implemented methods of using the models are also provided. | 2011-03-10 |
20110059506 | Recombinase polymerase amplification - This disclosure describe three related novel methods for Recombinase-Polymerase Amplification (RPA) of a target DNA that exploit the properties of recombinase and related proteins, to invade double-stranded DNA with single stranded homologous DNA permitting sequence specific priming of DNA polymerase reactions. The disclosed methods have the advantage of not requiring thermocycling or thermophilic enzymes. Further, the improved processivity of the disclosed methods may allow amplification of DNA up to hundreds of megabases in length. | 2011-03-10 |
20110059507 | REGULATABLE GROWTH OF FILAMENTOUS FUNGI - The present invention generally relates to hyphal growth in fungi and in particular describes the modulation of genes associated with hyphal growth in filamentous fungi. The present invention provides methods and systems for the production of proteins and/or chemicals from filamentous fungi which comprise modulation of genes associated with hyphal growth. Specifically, the present invention is directed to a full length cotA gene, its gene product and methods of use. | 2011-03-10 |
20110059508 | IMPROVING AGENT FOR DYSFUNCTION DUE TO NEUROPATHY AND RHO KINASE ACTIVATION INHIBITOR - An object of the present invention is to provide a substance which is able to be an active ingredient for the improvement of dysfunction caused by nerve damage. An improving agent for dysfunction due to nerve damage of the present invention as a means for resolution thereof is characterized in that it comprises an endo-β-N-acetylglucosaminidase type enzyme which hydrolyzes an N-acetylglucosamide bond in a keratan sulfate backbone as an active ingredient. When the improving agent of the present invention is administered, clinical improvement is achieved in motor neuron dysfunction and sensory neuron dysfunction such as neuropathic pain represented by a pain caused by allodynia and hyperalgesic reaction of the object to be treated. | 2011-03-10 |
20110059509 | Polypeptides Having Xylanase Activity And Polynucleotides Encoding Same - The present invention relates to isolated polypeptides having xylanase activity and isolated polynucleotides encoding the polypeptides. The invention also relates to nucleic acid constructs, vectors, and host cells comprising the polynucleotides as well as methods of producing and using the polypeptides. | 2011-03-10 |
20110059510 | TRANSGENIC RABBITS PRODUCING HUMAN FACTOR VII - The invention relates to transgenic rabbits that produce human factor VII in their mammary glands. The milk of said transgenic rabbits can be used as a raw material for the production of recombinant human factor VII. | 2011-03-10 |
20110059511 | SUBTILASES - The present invention relates to novel subtilases from wild-type strains of | 2011-03-10 |
20110059512 | EFFICIENT CELL CULTURE SYSTEM FOR HEPATITIS C VIRUS GENOTYPE 6A - The present inventors developed hepatitis C virus 6a/2a intergenotypic recombinants in which the JFH1 structural genes (Core, E1 and E2), p7 and the complete NS2 were replaced by the corresponding genes of the genotype 6a reference strain HK6a. Sequence analysis of recovered 6a/2a recombinants from 2 transfection experiments and subsequent reverse genetic studies revealed adaptive mutations in E1 and E2. Conclusion: The developed 6a/2a viruses provide a robust in vitro tool for research in HCV genotype 6, including vaccine studies and functional analyses. | 2011-03-10 |
20110059513 | EFFICIENT CELL CULTURE SYSTEM FOR HEPATITIS C VIRUS GENOTYPE 1A AND 1B - The present inventors developed hepatitis C virus 1a/2a and 1b/2a intergenotypic recombinants in which the JFH1 structural genes (Core, E1 and E2), p7 and NS2 were replaced by the corresponding genes of the genotype Ia reference strain H77C or TN or the corresponding genes of the genotype Ib reference strain J4. Sequence analysis of recovered 1a/2a and 1b/2a recombinants from 2 serial passages and subsequent reverse genetic studies revealed adaptive mutations in e.g. p7, NS2 and/or NS3. In addition, the inventors demonstrate the possibility of using adaptive mutations identified for one HCV isolate in generating efficient cell culture systems for other isolates by transfer of mutations across isolates, subtypes or major genotypes. Furthermore neutralization studies showed that viruses of e.g. genotype 1 were efficiently neutralized by genotype Ia, 4a and 5a serum, an effect that could be utilized e.g. in vaccine development and immunological prophylaxis. The inventors in addition demonstrate the use of the developed systems for screening of antiviral substances in vitro and functional studies of the virus, e.g. identification of receptors required for HCV entry | 2011-03-10 |
20110059514 | Yeast Biocatalysts for Degradation of Biowarfare Agents - The present disclosure relates to yeast biocatalysts and methods of using yeast biocatalysts for detoxifying a biowarfare agent. In some embodiments, a yeast biocatalyst may include a nucleic acid encoding a phage lysin operably linked to a prepro leader sequence, an expression control sequence operably linked to the nucleic acid, and a bioeffective amount (e.g., enough to detoxify) of the phage lysin. A yeast biocatalyst may include an engineered strain of a | 2011-03-10 |
20110059515 | PRODUCTION OF ISOPRENOIDS - The invention provides a biological method of producing isoprenoids. | 2011-03-10 |
20110059516 | PRODUCTION OF ISOPRENOIDS - The invention provides a biological method of producing isoprenoids. | 2011-03-10 |
20110059517 | Protease Variants Active Over A Broad Temperature Range - The present invention provides protease compositions particularly suited for dishwashing applications. | 2011-03-10 |
20110059518 | Vertical garden panel - Embodiments of the invention provide a planter system for supporting living plants on a vertical surface that includes a fabric folded into one or more vertically-arranged knife pleats; the pleats are secured and horizontally segmented into vertically arranged, upward facing pockets by a securing mechanism. The upward facing pockets are adapted hold a plant growth medium. Other aspects of the invention include a simple system for removing failing plants, and replacing them with healthy plants, already embedded in growth medium within a root liner pouch. The invention further includes an irrigation system. | 2011-03-10 |
20110059519 | Automatic System of Isolating and Incubating Circulating Tumor Cells - The present invention is apllied in fields like biological medicine and tissue engineering. A fluid control system in a cell isolation and culture system is used to automatically process sample preparation, circulating tumor cell (CTC) isolation, plate changing and cell culturing. By using the present invention, time and labor are saved; moreover, the present invention has a small size and is easily carried. | 2011-03-10 |
20110059520 | Deoxyribonucleic acid measuring apparatus and method of measuring deoxyribonucleic acid - With an insulated gate field effect transistor in which deoxyribonucleic acid (DNA) probes are immobilized on a gold electrode, extension reaction on the gold electrode is performed with DNA polymerase to directly measure an increased amount of a phosphate group caused by the extension reaction, that is, negative charge, by means of a current change between a source and a drain of the insulated gate field effect transistor. Thus, presence/absence of hybridization of target DNAs with the DNA probes, and presence/absence of the extension reaction are detected. Optimum immobilization density of the DNA probes on the gold electrode is set at 4×10 | 2011-03-10 |
20110059521 | DEVICE AND METHOD FOR MONITORING INHIBITION OF PLATELET FUNCTION - The invention provides a method of monitoring the response of platelets to a cyclooxygenase-1 (COX1) inhibitor such as aspirin. The method involves collecting platelet-containing mammalian blood treated with a COX1 inhibitor; mixing the blood with a COX1-dependent platelet agonist, such as arachidonic acid, monitoring extracellular ATP in the agonist-activated blood to generate a measurement, and comparing the measurement to a standard value. Devices, systems, and kits for carrying out the method are also provided. | 2011-03-10 |
20110059522 | NUCLEIC ACIDS ENCODING A HOUSE DUST MITE ALLERGEN, DER P III, AND USES THEREOF - Isolated nucleic acids encoding an allergen of | 2011-03-10 |
20110059523 | Heat Transfer Baffle System and Uses Thereof - This disclosure describes an improved heat transfer system for use in reaction vessels used in chemical and biological processes. In one embodiment, a heat transfer baffle comprising two sub-assemblies adjoined to one another is provided. | 2011-03-10 |
20110059524 | HUMAN CDR-GRAFTED ANTIBODY AND ANTIBODY FRAGMENT THEREOF - A human CDR-grafted antibody or the antibody fragment thereof which specifically reacts with the extracellular region of human CC chemokine receptor 4 (CCR4) but does not react with a human blood platelet; a human CDR-grafted antibody or the antibody fragment thereof which specifically reacts with the extracellular region of CCR4 and has a cytotoxic activity against a CCR4-expressing cell; and a medicament, a therapeutic agent or a diagnostic agent comprising at least one of the antibodies and the antibody fragments thereof as an active ingredient. | 2011-03-10 |
20110059525 | Novel Ecdysone Receptor-Based Inducible Gene Expression System - This invention relates to the field of biotechnology or genetic engineering. Specifically, this invention relates to the field of gene expression. More specifically, this invention relates to a novel inducible gene expression system and methods of modulating gene expression in a host cell for applications such as gene therapy, large scale production of proteins and antibodies, cell-based high throughput screening assays, functional genomics and regulation of traits in transgenic plants and animals. | 2011-03-10 |
20110059526 | REPROGRAMMING A CELL BY INDUCING A PLURIPOTENT GENE THROUGH USE OF AN HDAC MODULATOR - The invention relate to methods, compositions, and kits for reprogramming a cell. In one embodiment, the invention relates to a method comprising inducing the expression of at least one gene that contributes to a cell being pluripotent or multipotent. In yet another embodiment, the method comprises inhibiting the activity of an HDAC with an HDAC inhibitor and inducing the expression of at least one gene that contributes to a cell being pluripotent or multipotent. In still another embodiment, the invention relates to a method for reprogramming comprising exposing a cell to more than one agent to inhibit more than ore type of regulatory protein. In yet another embodiment, the invention relates to a reprogrammed cell or an enriched population of reprogrammed cells that can have characteristics of an ES-like cell, which can be re- or trans-differentiated into various differentiated cell types | 2011-03-10 |
20110059527 | Active Cell Culture Via Shape Memory - Substrates for cell culture and tissue engineering bioreactors consisting of polymers that change their shape over time under stimulation by temperature change, hydration, degradation, or other means. A method of controlling cell culture using a biodegradable shape memory polymer, wherein shape changes can transfer stresses, strains, or both to adherent or otherwise connected cells such that the mechanical stimulus impacts cell development and the resulting properties of tissues. | 2011-03-10 |
20110059528 | Method for Preparing Raw Pollen - The present invention relates to a method for preparing raw pollen which is suitable for being used for the preparation of allergen extracts. The method involves instantaneously freezing the pollen immediately after harvesting, optionally followed by drying the frozen pollen by sublimation. | 2011-03-10 |
20110059529 | METHODS FOR GENETIC PLANT TRANSFORMATION USING WATER-SOLUBLE FULLERENE DERIVATIVES - In various embodiments, methods described herein comprise the use of water-soluble cationic fullerene derivatives for improving plant genetic transformation. Cationic Fullerene derivatives of the invention possess DNA binding and compaction activity and provide a new method to deliver DNA into plant cells for plant transformation. Water-soluble fullerene derivatives of the invention with anionic or non-polar substituents possess antioxidant (free radical scavenging) activity, provide improved yields and efficiency of plant transformation methods such as biolistic, | 2011-03-10 |
20110059530 | Novel Ecdysone Receptor-Based Inducible Gene Expression System - This invention relates to the field of biotechnology or genetic engineering. Specifically, this invention relates to the field of gene expression. More specifically, this invention relates to a novel inducible gene expression system and methods of modulating gene expression in a host cell for applications such as gene therapy, large scale production of proteins and antibodies, cell-based high throughput screening assays, functional genomics and regulation of traits in transgenic plants and animals. | 2011-03-10 |
20110059531 | METHOD FOR EXPRESSION OF SMALL RNA MOLECULES WITHIN A CELL - The invention provides methods and compositions for the expression of small RNA molecules within a cell using a lentiviral vector. The methods can be used to express doubles stranded RNA complexes. Small interfering RNA (siRNA) can be expressed using the methods of the invention within a cell, which are capable of down regulating the expression of a target gene through RNA interference. A variety of cells can be treated according to the methods of the invention including embryos, embryogenic stem cells, allowing for the generation of transgenic animals or animals constituted partly by the transduced cells that have a specific gene or a group of genes down regulated. | 2011-03-10 |
20110059532 | MONITORING OF FRYING OIL QUALITY USING COMBINED OPTICAL INTERROGATION METHODS AND DEVICES - Herein are disclosed methods and devices for optically monitoring multiple parameters of an oil sample. In one embodiment, the methods and devices can be used for determining the quality of cooking or flying oil in terms of the free fatty acid content and total polar compound content of the oil. The methods use an optical absorbtive/reflective property in evaluating the free fatty acid content, and use optical fluorescence in evaluating the total polar compound content, with both measurements using a single sampling substrate and a single measuring device. | 2011-03-10 |
20110059533 | FLUORESCENCE DETECTION SYSTEM, METHOD, AND DEVICE FOR MEASURING BIOMOLECULES - A fluorescence detection system for measuring biomolecules is disclosed, which includes a fluorescence detection device, a light source, a sample-loading unit, and an analysis-reading device. The fluorescence detection device has a substrate and plural phototransistors arranged on the substrate, and each phototransistor contains an emitter, a collector locating on the substrate, and a base between the emitter and the collector. The base-collector diode junction functions as an absorber to convert fluorescence to photocurrent. The light source serves to excite a fluorescent dye contained in a biomolecule sample. The sample-loading unit is used to load or transport the excited biomolecule sample onto a sensing zone of the fluorescence detection device. The analysis-reading device is to measure photocurrent output from the fluorescence detection device under a bias. Hence, the biomolecule content can be easily determined by the fluorescence detection system. | 2011-03-10 |
20110059534 | DETERMINATION OF TESTOSTERONE BY MASS SPECTROMETRY - Provided are methods for determining the presence or amount of testosterone in a test sample, comprising ionizing all or a portion of the testosterone present in the sample to produce one or more testosterone ions that are detectable in a mass spectrometer. All or a portion of the testosterone present in the sample is ionized to produce one or more testosterone ions, which may be isolated and fragmented to produce precursor ions. A separately detectable internal testosterone standard can be provided in the sample. In a preferred embodiment, the reference is 2,2,4,6,6-d | 2011-03-10 |
20110059535 | Electronic Methods for the Detection of Analytes - The present invention is directed to the detection of target analytes using electronic techniques, particularly AC techniques. | 2011-03-10 |
20110059536 | HEXAVALENT CHROMIUM DETECTOR - The present invention relates to a molecular-based system for the optical detection, quantification and detoxification of hexavalent chromium (Cr | 2011-03-10 |
20110059537 | METHOD FOR ESTIMATING RISK OF ACUTE KIDNEY INJURY - Methods and products for identifying subjects at risk of acute kidney injury (AKI) are provided according to the invention. Included, for instance, are diagnostic kits and methods involving the use of at least two AKI associated markers. | 2011-03-10 |
20110059538 | DIFFRACTION GRATINGS COMPRISING POROUS MATERIALS AND DIFFRACTION-BASED SENSORS COMPRISING POROUS MATERIALS - Diffraction gratings comprising a substrate with protrusions extending therefrom. In one embodiment, the protrusions are made of a porous material, for example porous silicon with a porosity of greater than about 10%. The diffraction grating may also be constructed from multiple layers of porous material, for example porous silicon with a porosity of greater than about 10%, with protrusion of attached thereto. In some embodiments the protrusions may be made from photoresist or another polymeric material. The gratings are the basis for sensitive sensors. In some embodiments, the sensors are functionalized with selective binding species, to produce sensors that specifically bind to target molecules, for example chemical or biological species of interest. | 2011-03-10 |
20110059539 | L-FABP, NATRIURETIC PEPTIDES, AND CARDIAC TROPONINS IN SUBJECTS IN NEED OF CARDIAC THERAPY - Disclosed is a method for identifying a subject being susceptible to a cardiac therapy, comprising (a) determining the amounts of liver fatty acid binding protein, and at least one further polypeptide from the group of a cardiac troponin and a natriuretic peptide in at least one sample of a subject suffering from heart failure, (b) comparing the thus determined amounts to suitable reference amounts, and (c) identifying a subject being susceptible to a cardiac therapy. Also described is a device and a kit adapted to carry out the method of the present invention. Also described is the use of liver fatty acid binding protein and at least one further polypeptide from the group of a cardiac troponin and a natriuretic peptide for identifying a subject being susceptible to a cardiac therapy. | 2011-03-10 |
20110059540 | IDENTIFYING SUSCEPTIBILITY OF A SUBJECT TO CARDIAC THERAPY BASED ON DETERMINATION OF A CARDIAC TROPONIN, SCD40L, AND C-REACTIVE PROTEIN - Disclosed is a method for identifying a subject being susceptible to a cardiac therapy based on determination of a cardiac troponin T and the additional determination of C-reactive protein (CRP) or sCD40L (soluble CD40 ligand) in a sample of a subject with stable coronary heart disease and a history of an acute cardiovascular event. Also disclosed is a method for predicting the risk of mortality and/or a further acute cardiovascular event for a subject with stable coronary heart disease and a history of acute cardiovascular event based on the determination of the aforementioned markers. Further disclosed are kits and devices adapted to carry out the disclosed methods. | 2011-03-10 |
20110059541 | Method for Obtaining Information on Formation of Double-Stranded Nucleic Acid - Provided is a method for obtaining information on the formation of a double-stranded nucleic acid by detecting fluorescence, which is simple, is applicable to various interaction systems, and features high detection sensitivity with reduced background signals. Specifically provided is a method for obtaining information on the formation of a double-stranded nucleic acid, which includes detecting information on fluorescence of a probe consisted of a labeling fluorescent dye labeled on a nucleic acid strand and an intercalator bound or inserted between base pairs in the double-stranded nucleic acid to permit an energy transfer with the fluorescent dye. | 2011-03-10 |
20110059542 | DETECTION OF NUCLEIC ACIDS BY TARGET-SPECIFIC HYBRID CAPTURE METHOD - Target-specific hybrid capture (TSHC) provides a nucleic acid detection method that is not only rapid and sensitive, but is also highly specific and capable of discriminating highly homologous nucleic acid target sequences. The method produces DNA-RNA hybrids which can be detected by a variety of methods. | 2011-03-10 |
20110059543 | METHODS FOR DETECTING OR MONITORING CANCER USING LPE AS A MARKER - A method of detecting a cancer, such as ovarian cancer, in a test subject including (a) determining the amount of a lysophosphatidyl ethanolamine in a sample of a bodily fluid taken from the test subject, and (b) comparing the amount of the lysophosphatidyl ethanolamine in the sample of the bodily fluid taken from the test subject to a range of amounts of the lysophosphatidyl ethanolamine found in samples of the bodily fluid taken from a group of normal subjects of the same species as the test subject and lacking the cancer, such as ovarian cancer, whereby a change in the amount of the lysophosphatidyl ethanolamine in the sample of the bodily fluid from the test subject indicates the presence of the cancer, such as ovarian cancer. | 2011-03-10 |
20110059544 | OLFACTORY RECEPTOR-FUNCTIONALIZED TRANSISTORS FOR HIGHLY SELECTIVE BIOELECTRONIC NOSE AND BIOSENSOR USING THE SAME - In accordance with an aspect of the present invention, there is provided a transistor including: a substrate; a source electrode and a drain electrode formed being spaced apart from each other on the substrate; a nanostructure electrically contacted with and formed between the source electrode and the drain electrode; and a lipid membrane having an olfactory receptor protein which is formed to cover surfaces of the source electrode, the drain electrode, and the nanostructure. The olfactory receptor-functionalized transistor in accordance with an aspect of the present invention is useful for a bioelectronic nose which can detect odorants highly specifically with femtomolar sensitivity, and may be applied in various fields requiring the rapid detection of specific odorants, for example, anti-bioterrorism, disease diagnostics, and food safety. | 2011-03-10 |
20110059545 | TIME-TEMPERATURE INDICATOR BASED ON OLIGOMERIC SPIROAROMATICS - The present invention relates to a time temperature indicator for indicating a temperature change over time comprising one dimeric or trimeric spiropyran indicator of the formula I or II wherein R | 2011-03-10 |
20110059546 | METHOD AND APPARATUS FOR CONVERSION OF MULTIPLE ANALYTE CATION TYPES TO A SINGLE ANALYTE ANION TYPE VIA ION/ION CHARGE INVERSION - An apparatus and method for a sample using a mass spectrometer is described, including, generating ions of a first polarity from an analyte using electrospray ionization; generating ions of a second polarity from a reagent; injecting the ions of the first polarity and ions of the second polarity in sequence into a chamber of the mass spectrometer such that the ions of the first polarity and the ions of the second polarity interact in the chamber to form analyte ions having the second polarity; and, analyzing the mass spectrum of the analyte ions of the second polarity. A reagent such as a polyamidomine is selected to preferentially yield analyte ions of the second polarity having a desired mass-to-charge ratio. | 2011-03-10 |
20110059547 | USES OF REAGENTS IN SAMPLE COLLECTION AND CARTRIDGE SYSTEMS - Provided is a sample collection container comprising one or more reagent bodies, wherein each body comprises one or more reagents confined by a restraining agent, wherein the restraining agent is capable of being broken down to release the one or more reagents, and wherein the one or more reagents are dispersed through the restraining agent. | 2011-03-10 |
20110059548 | Laser Capture Microdissection (LCM) Extraction Device and Device Carrier, and Method for Post-LCM Fluid Processing - The present invention generally discloses an extraction system that provides a locale for fluid processing and extraction on a post-microcapture transfer film. The extraction system includes a transfer film carrier and an extraction device forming a reservoir. The extraction system selectively excludes regions of the transfer film from the reservoir to advantageously reduce contamination due to matter adhered to the transfer film by non-specific transfer. | 2011-03-10 |
20110059549 | METHODS AND SYSTEMS FOR PRODUCING NANOLIPOPROTEIN PARTICLES - Provided herein are methods and systems for the production of a nanolipoprotein particle (NLP) that includes a scaffold protein a membrane forming lipid and optionally a target protein. At least one of the scaffold protein and target protein can be provided through an IVT system. The membrane forming lipid, scaffold protein and optionally the target protein can be assembled for a time and under conditions that allow obtaining high yield NLPs, NPLs with an increased solubility, an NLP of a controlled size, and/or an NLP having a size predetermined to include a pre-selected target protein. | 2011-03-10 |
20110059550 | MINIMALLY INVASIVE ASSESSMENT OF IgE MEDIATED ALLERGY - A system and method for determining the presence and level of allergy indicators in a human fluid sample such as, but not limited to, blood serum and saliva, is disclosed. In another embodiment, the method may assess a level of allergens in a consumable product. The system and method may make use of functionalized magnetic nanoparticles that have modified surfaces suitable for attracting allergy indicators from human fluid sample and allergens from consumable products. The system and method may provide a minimally invasive assessment of allergy indicators to determine whether one is allergic to a substance. | 2011-03-10 |
20110059551 | Assay Device - Disclosed is an assay device to determine the presence of at least one analyte of interest in a liquid sample, the device comprising means for generating a first signal (the ‘test’ signal) which indicates the presence and/or amount of analyte of interest in the sample; and means for generating a second signal, the generation of which second signal indicates both (a) the test has been successfully conducted, and that (b) sufficient time has elapsed following contact of the assay device with the liquid sample for the test to be read and the first signal to have been properly generated. | 2011-03-10 |
20110059552 | RUBELLA E1 ENVELOPE PROTEIN VARIANTS AND THEIR USE IN DETECTION OF ANTI-RUBELLA ANTIBODIES - The invention relates to soluble rubella E1 antigens and variants of these antigens. The antigens contain amino acids 201 to 432 or 169 to 432 and are lacking amino acids 453 to 481 as well as at least the amino acids 143 to 164. They further contain a region spanning two disulfide-bridges. The invention also relates to a recombinant DNA molecule encoding the rubella E1 antigens, the expression of rubella E1 antigens as chaperone fusion proteins and their use in a method of detecting antibodies against rubella in a sample. | 2011-03-10 |
20110059553 | METHODS AND COMPOSITIONS FOR DETECTING HERPES SIMPLEX VIRUS TYPE 2 - The invention provides methods for sensitive and specific detection of anti-HSV-2 antibodies by depletion of cross-reactive (non-specific) antibodies in a biological sample that can lead to a false positive result. The invention also features compositions, including nucleic acids, polypeptides, and kits, for use in the methods of the invention. | 2011-03-10 |
20110059554 | DETERMINING AN EXPRESSION STATUS OF HUMAN EPIDERMAL GROWTH FACTOR RECEPTOR 2 (HER2) IN A BIOLOGICAL SAMPLE - A method for determining an expression of human epidermal growth factor receptor 2 (HER2) of a subject. The method includes providing a sample from the subject; measuring one of (i) amounts of two or more proteins in the sample, each protein having a molecular weight substantially equal to 4740, 8404, 8419, 8435, 8450, 8455, 8465, 8570, 8607 or 8626 atomic mass units, and (ii) amounts of at least one of human cystein-rich intestinal protein 1 (CRIP1), one or more variants of the human cystein-rich intestinal protein 1 (CRIP1 variants), and proteolytic digestion products thereof in the sample; and comparing the amounts of the proteins to control amounts, which control amounts are determinative of the expression of the human epidermal growth factor receptor 2. | 2011-03-10 |
20110059555 | BRANCHED AND MULTI-CHAIN NUCLEIC ACID SWITCHES FOR SENSING AND SCREENING - Embodiments of the invention relate to a branched or multichain nucleic acid switch adapted to switch from a first conformation to a second conformation upon ligand binding. The switch includes a probe strand, P, which includes the ligand binding domain; a switching framework which includes a cover strand (C), and a tether that holds P and C together and a signaling apparatus. Some embodiments include a toggle strand (T) where now the tether holds P, C, T, and the signaling apparatus together. As the switch changes between the first and second conformations; the signaling apparatus reports the state of the switch. The signaling entity is typically a lumiphore and a quencher located along the switching framework. Nucleic acid switches have applications in real time assays for diverse agents including infectious agents, environmental toxins, and terrorist agents, as well as screening methods for such agents. Further applications are found for nanoelectronics, nanofabrication and nanomachines. | 2011-03-10 |
20110059556 | Rapid and Continuous Analyte Processing in Droplet Microfluidic Devices - The compositions and methods described herein are designed to introduce functionalized microparticles into droplets that can be manipulated in microfluidic devices by fields, including electric (dielectrophoretic) or magnetic fields, and extracted by splitting a droplet to separate the portion of the droplet that contains the majority of the microparticles from the part that is largely devoid of the microparticles. Within the device, channels are variously configured at Y- or T junctions that facilitate continuous, serial isolation and dilution of analytes in solution. The devices can be limited in the sense that they can be designed to output purified analytes that are then further analyzed in separate machines or they can include additional channels through which purified analytes can be further processed and analyzed. | 2011-03-10 |
20110059557 | METHOD OF MANUFACTURING NONVOLATILE MEMORY DEVICE - A method of manufacturing a nonvolatile memory device having a laminated structure in which a first magnetic material layer, a tunnel insulator film, and a second magnetic material layer are sequentially laminated, in which information is stored when an electric resistance value changes depending on a magnetization reversal state is disclosed. The method includes the steps of: sequentially forming the first magnetic material layer, the tunnel insulator film, and the second magnetic material layer; forming a mask layer on the second magnetic material layer; oxidizing a part uncovered by the mask layer of the second magnetic material layer; and reducing the oxidized part of the second magnetic material layer. | 2011-03-10 |
20110059558 | PROCESS OF PRODUCING LIQUID DISCHARGE HEAD BASE MATERIAL - A process includes preparing a base material having a first surface provided with an element generating energy that is used for discharging a liquid and an electrode layer that is connected to the element; forming a hollow on a second surface, which is the surface on the opposite side of the first surface, of the base material, wherein part of the electrode layer serves as the bottom face of the hollow; covering the surface of the base material and the bottom face forming the inner face of the hollow with an insulating film; and partially exposing the electrode layer by removing part of the insulating film covering the bottom face using laser light. | 2011-03-10 |
20110059559 | ALTERNATING CURRENT LIGHT-EMITTING DEVICE AND FABRICATION METHOD THEREOF - An alternating current light-emitting device includes a substrate, a plurality of microdie light-emitting elements formed on the substrate, a rectifying element-dedicated member formed on a surface of a portion of microdie light-emitting elements, a rectifying unit formed on the rectifying element-dedicated member and provided with at least four rectifying elements forming a Wheatstone bridge circuit, and an electrically conductive structure electrically connecting the rectifying elements and the microdie light-emitting elements. With the rectifying unit being formed on the rectifying element-dedicated member, the rectifying elements are highly tolerant of reverse bias and feature low starting forward bias. Also, the present invention provides a method for fabricating an alternating current light-emitting device. | 2011-03-10 |
20110059560 | Organic Electroluminescence Pixel, Organic Electroluminescence Device, and Manufacturing Method Thereof - An organic electroluminescence pixel, an organic electroluminescence device comprising the same, and method for manufacturing the organic electroluminescence device are provided. The organic electroluminescence pixel comprises a substrate, a first electrode, a first carrier-injection layer, a semi-trans-flective metal layer, an organic emitting layer, and a second electrode. The first electrode is formed on the substrate. The first carrier-injection layer, the semi-trans-flective metal layer, and the organic emitting layer are formed between the first electrode and the second electrode. At least one of the first electrode and the second electrode comprises a transparent electrode. | 2011-03-10 |
20110059561 | METHOD FOR FABRICATING A FLEXIBLE DISPLAY DEVICE - A method for fabricating a flexible display device includes providing a carrier substrate, forming a sacrificial layer on the carrier substrate, forming a metal layer and a buffer layer on the sacrificial layer in that order, forming at least one active device on the buffer layer, and separating the metal layer and the carrier substrate by laser treatment. | 2011-03-10 |
20110059562 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film. | 2011-03-10 |
20110059563 | MANUFACTURE METHOD FOR ZnO-BASED LIGHT EMITTING DEVICE - A manufacture method for a ZnO-based light emitting device, includes the steps of: forming a ZnO-based semiconductor layer of a first conductivity type above a substrate; two-dimensionally growing a first ZnO-based semiconductor layer of a second conductivity type opposite to the first conductivity type above the ZnO-based semiconductor layer of the first conductivity type; and three-dimensionally growing a second ZnO-based semiconductor layer of the second conductivity type on the first ZnO-based semiconductor layer of the second conductivity type. | 2011-03-10 |
20110059564 | LED HAVING VERTICAL STRUCTURE AND METHOD FOR FABRICATING THE SAME - A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layers, and provided with an outer surface having a tilt angle of a designated degree; and a second electrode formed on the conductive semiconductor layer. | 2011-03-10 |
20110059565 | METHOD AND APPARATUS FOR MEMS OSCILLATOR - A resonator includes a CMOS substrate having a first electrode and a second electrode. The CMOS substrate is configured to provide one or more control signals to the first electrode. The resonator also includes a resonator structure including a silicon material layer. The resonator structure is coupled to the CMOS substrate and configured to resonate in response to the one or more control signals. | 2011-03-10 |
20110059566 | Forming a Micro Electro Mechanical System - A method of forming a micro-electro mechanical system (MEMS), includes (1) removing material from a first wafer to define a first movable portion corresponding to an x-y accelerometer and a second movable portion corresponding to a z accelerometer, where each movable portion comprises at least one flexure member and at least one proof mass, each proof mass and flexure member being formed by the selective removal of material from a top side and a bottom side of first wafer; (2) bonding the first wafer to a second wafer comprising an electronic circuit, such that a gap is defined between the first wafer and the second wafer. The thickness of the at least one flexure member of the first movable portion is independent of a thickness of the at least one flexure member of the second movable portion and a thickness of the proof mass of the first movable portion is independent of a thickness of the at least one proof mass of the second movable portion. | 2011-03-10 |
20110059567 | MEMS device package with vacuum cavity by two-step solder reflow method - In a method of vacuum packaging a MEMS device, at least one MEMS device is attached on a substrate. A solder preform is printed on the substrate at the perimeter surrounding the substrate. A lid is attached to the solder preform wherein the lid provides a cavity enclosing the at least one MEMS device. A first reflowing step reflows the solder at a first temperature, partially sealing the lid/substrate interface and at the same time does the outgassing and baking procedure for the packaging. Flux is applied onto an outer ring of the solder preform and a second step reflows the solder at a second temperature, completely sealing the lid/substrate interface and providing a vacuum cavity enclosing the at least one MEMS device. | 2011-03-10 |
20110059568 | METHOD FOR FABRICATING NANOSCALE THERMOELECTRIC DEVICE - The present invention discloses a method for fabricating a nanoscale thermoelectric device, which comprises steps: providing at least one template having a group of nanoscale pores; forming a substrate on the bottom of the template; injecting a molten semiconductor material into the nanoscale pores to form a group of semiconductor nanoscale wires; removing the substrate to obtain a semiconductor nanoscale wire array; and using metallic conductors to cascade at least two semiconductor nanoscale wire arrays to form a thermoelectric device having a higher thermoelectric conversion efficiency. | 2011-03-10 |
20110059569 | PHOTOVOLTAIC PANEL, RELATIVE PRODUCTION PROCESS AND PLANT FOR CARRYING OUT SUCH A PROCESS - A photovoltaic panel made by direct co-extrusion of a plurality of superimposed polymeric layers and a plant for carrying out such a process. | 2011-03-10 |
20110059570 | Process For The Rough-Etching of Silicon Solar Cells - The present invention relates to a novel process for producing textured surfaces on multicrystalline, tricrystalline and monocrystalline silicon surfaces of solar cells or on silicon substrates which are used for photovoltaic purposes. It relates in particular to an etching process and an etching agent for producing a textured surface on a silicon substrate. | 2011-03-10 |
20110059571 | Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions - A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage. | 2011-03-10 |
20110059572 | BACKSIDE ILLUMINATED IMAGE SENSOR WITH SHALLOW BACKSIDE TRENCH FOR PHOTODIODE ISOLATION - A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. The sensor layer further comprises a plurality of backside trenches formed in the backside surface of the sensor layer and arranged to provide isolation between respective pairs of the photosensitive elements. The backside trenches have corresponding backside field isolation implant regions formed in the sensor layer, and the resulting structure provides reductions in carrier recombination and crosstalk between adjacent photosensitive elements. The image sensor may be implemented in a digital camera or other type of digital imaging device. | 2011-03-10 |
20110059573 | PIXEL WITH STRAINED SILICON LAYER FOR IMPROVING CARRIER MOBILITY AND BLUE RESPONSE IN IMAGERS - An imager having a pixel cell having an associated strained silicon layer. The strained silicon layer increases charge transfer efficiency, decreases image lag, and improves blue response in imaging devices. | 2011-03-10 |
20110059574 | COATING APPARATUS AND COATING METHOD - A coating apparatus including a coating part which applies a liquid material including an oxidizable metal on a substrate; a chamber having a coating section in which the coating part applies the liquid material on the substrate and a transport section into which the liquid material is transported; an adjusting part which adjusts at least one of oxygen concentration and humidity inside the chamber; and a control part which stops an operation of the coating part in response to the entrance of foreign object into the chamber. | 2011-03-10 |
20110059575 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured. | 2011-03-10 |
20110059576 | Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same - A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode. | 2011-03-10 |
20110059577 | MANUFACTURING METHOD OF LEADFRAME AND SEMICONDUCTOR DEVICE - In order to remove plating burrs generated in etching step, there is provided a manufacturing method of semiconductor devices on each of unit leadframes in a leadframe material in which a plurality of the unit leadframes are arranged in plural rows or a single row, wherein at least two types of plating burr removals are conducted after a half-etching is performed onto a front surface side of the leadframe material, using a first plating layer as resist film. | 2011-03-10 |
20110059578 | METHOD OF MAKING A SEMICONDUCTOR CHIP ASSEMBLY WITH A POST/BASE HEAT SPREADER, A SIGNAL POST AND A CAVITY - A method of making a semiconductor chip assembly includes providing a thermal post, a signal post and a base, mounting an adhesive on the base including inserting the thermal post into a first opening in the adhesive and the signal post into a second opening in the adhesive, mounting a conductive layer on the adhesive including aligning the thermal post with a first aperture in the conductive layer and the signal post with a second aperture in the conductive layer, then flowing the adhesive upward between the thermal post and the conductive layer and between the signal post and the conductive layer, solidifying the adhesive, providing a conductive trace that includes a pad, a terminal and the signal post, wherein the pad includes a selected portion of the conductive layer, mounting a semiconductor device on the thermal post, wherein a heat spreader includes the thermal post and the base and the semiconductor device extends into a cavity in the thermal post, electrically connecting the semiconductor device to the conductive trace and thermally connecting the semiconductor device to the heat spreader. | 2011-03-10 |
20110059579 | METHOD OF FORMING TAPE BALL GRID ARRAY PACKAGE - A method of forming a semiconductor package including providing a substrate having a through hole formed therein. A tape is attached to a surface of the substrate such that the through hole is covered by the tape. An integrated circuit (IC) die is attached to the tape. The IC die is electrically connected to the substrate via a plurality of electrical connections. The IC die and the electrical connections are encapsulated and the tape is removed from the substrate. | 2011-03-10 |
20110059580 | HIGH-POWER SEMICONDUCTOR DIE PACKAGES WITH INTEGRATED HEAT-SINK CAPABILITY AND METHODS OF MANUFACTURING THE SAME - An exemplary semiconductor die package of the invention has a metal-oxide substrate disposed between a first surface of a semiconductor die and a heat-sinking component, with a conductive die clip or one or more electrical interconnect traces disposed between the metal-oxide substrate and the first surface of the semiconductor die. The heat-sinking component may comprise a heat sink, or an adaptor plate to which a heat sink may be coupled. The conductive die clip or electrical trace(s) provides electrical connection(s) to the first surface of the semiconductor die, while the metal-oxide substrate electrically insulates the die from the heat-sinking component, and provides a path of high thermal conductivity between the die and the heat-sinking component. The second surface of the semiconductor die may be left free to connect to a circuit board, or a leadframe or interconnect substrate may be attached to it. | 2011-03-10 |
20110059581 | Method for manufacturing semiconductor module - A method for manufacturing a semiconductor module, includes the steps of preparing a board; mounting a semiconductor device on the second metal foil; placing a resin case onto the board for surrounding a first metal foil, an insulating sheet, the second metal foil, and the semiconductor device; pouring a resin in a paste form into the case to fill a space relative to the first metal foil, insulating sheet, the second metal foil and the semiconductor device; and heat-curing the resin. A bottom end of a peripheral wall of the case is located above a bottom surface of the first metal. The bottom surface of the first metal foil and the resin form a flat bottom surface to contact an external mounting member. | 2011-03-10 |
20110059582 | MOLDED ULTRA THIN SEMICONDUCTOR DIE PACKAGES, SYSTEMS USING THE SAME, AND METHODS OF MAKING THE SAME - Disclosed are molded ultra-thin semiconductor die packages, systems that incorporate such packages, and methods of making such packages. An exemplary package comprises a leadframe having an aperture formed between the leadframe's first and second surfaces, and a plurality of leads disposed adjacent to the aperture. The package further comprises a semiconductor disposed in the aperture of the leadframe with its top surface substantially flush with the leadframe's first surface, and at least one gap between at least one side surface of the semiconductor die and at least one lead of the leadframe. A body of electrically insulating material is disposed in the at least one gap. A plurality of conductive members interconnect leads of the leadframe with conductive regions on the die's top surface, with at least one conductive member having a portion disposed over at least a portion of the body of insulating material. | 2011-03-10 |
20110059583 | 3-D Single Gate Inverter - A 3-D (Three Dimensional) inverter having a single gate electrode. The single gate electrode has a first gate dielectric between the gate electrode and a body of a first FET (Field Effect transistor) of a first doping type, the first FET having first source/drain regions in a semiconductor substrate, or in a well in the semiconductor substrate. The single gate electrode has a second gate dielectric between the gate electrode and a body of a second FET of opposite doping to the first FET. Second source/drain regions of the second FET are formed from epitaxial layers grown over the first source/drain regions. | 2011-03-10 |
20110059584 | MANUFACTURING PROCESS OF FIN-TYPE FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR - A constant distance can be maintained between source/drain regions without providing a gate side wall by forming a gate electrode including an eaves structure, and a uniform dopant concentration is kept within a semiconductor by ion implantation. As a result, a FinFET excellent in element properties and operation properties can be obtained. A field effect transistor, wherein a gate structure body is a protrusion that protrudes toward source and drain regions sides in a channel length direction and has a channel length direction width larger than that of the part adjacent to the insulating film in a gate electrode, and the protrusion includes an eaves structure formed by the protrusion that extends in a gate electrode extending direction on the top surface of the semiconductor layer. | 2011-03-10 |
20110059585 | NONVOLATILE MEMORY DEVICE AND FABRICATION METHOD - Provided is a nonvolatile memory device and a fabrication method. The nonvolatile memory device includes an active region defined in a semiconductor substrate, a gate insulating layer formed on the active region and a plurality of gate patterns formed on the gate insulating layer, and crossing over the active region. The gate insulating layer includes a discharge region in a predetermined portion between the gate patterns, the discharge region having a lesser thickness than that of the gate insulating layer under the gate pattern, because a thickness portion of the gate insulating layer is removed to form the discharge region. | 2011-03-10 |
20110059586 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type provided on a main surface of the first semiconductor layer and having a lower impurity concentration than that of the first semiconductor layer; a third semiconductor layer of a second conductivity type provided on the second semiconductor layer; a fourth semiconductor layer of the first conductivity type selectively provided on the third semiconductor layer; a gate electrode provided in a trench passing through the third semiconductor layer and reaching the second semiconductor layer; a first main electrode contacting the fourth semiconductor layer and contacting the third semiconductor layer through a contact groove provided to pass through the fourth semiconductor layer between the contiguous gate electrodes; a second main electrode provided on an opposite surface to the main surface of the first semiconductor layer; and a fifth semiconductor layer of the second conductivity type provided in an interior portion of the second semiconductor layer corresponding to a part under the contact groove. An uppermost portion of the fifth semiconductor layer contacts the third semiconductor layer, a lowermost portion of the fifth semiconductor layer has a higher impurity concentration than that of the other portion in the fifth semiconductor layer and is located in the second semiconductor layer and not contacting the first semiconductor layer, and the fifth semiconductor layer is narrower from the uppermost portion to the lower most portion. | 2011-03-10 |
20110059587 | DEVICE HAVING SELF-ALIGNED DOUBLE GATE FORMED BY BACKSIDE ENGINEERING, AND DEVICE HAVING SUPER-STEEP RETROGRADED ISLAND - A method of forming a dual gate semiconductor device is provided that includes providing a substrate having a first semiconductor layer and a second semiconductor layer, in which a first gate structure is formed on the second semiconductor layer. The second semiconductor layer and the first semiconductor layer are etched to expose the substrate using the first gate structure as an etch mask. A remaining portion of the first semiconductor layer is present underlying the first gate structure having edges aligned to the edges of the first gate structure. An epitaxial semiconductor material is formed on exposed portions of the substrate. The substrate and the remaining portion of the first semiconductor layer are removed to provide a recess having edges aligned to the edges of the first gate structure, and a second gate structure is formed in the recess. A method of forming a retrograded island is also provided. | 2011-03-10 |
20110059588 | MOS TRANSISTOR FOR REDUCING SHORT-CHANNEL EFFECTS AND ITS PRODUCTION - The invention is related to a MOS transistor and its fabrication method to reduce short-channel effects. Existing process has the problem of high complexity and high cost to reduce short-channel effects by using epitaxial technique to produce an elevated source and drain structure. In the invention, the MOS transistor, fabricated on a silicon substrate after an isolation module is finished, includes a gate stack, a gate sidewall spacer, and source and drain areas. The silicon substrate has a groove and the gate stack is formed in the groove. And the process for the MOS transistor includes the following steps: forming the groove; carrying out well implantation, anti-punchthrough implantation and threshold-voltage adjustment implantation; forming the gate stack in the groove which comprising patterning the gate electrode; carrying lightly doped drain implantation and halo implantation; forming the gate sidewall spacer; carrying source and drain implantation to get the source and drain areas; forming a metal silicide layer on the source and drain areas. | 2011-03-10 |
20110059589 | METHOD FOR PRODUCING A FIELD EFFECT DEVICE HAVING SELF-ALIGNED ELECTRICAL CONNECTIONS WITH RESPECT TO THE GATE ELECTRODE - A gate dielectric, an insulating layer and and an etching mask are formed on a substrate. The etching mask delineates at least the gate electrode and the source and drain contacts and the source, drain and gate output lines of the first metal level of a field effect device. The gate electrode and the future source and drain contacts are formed simultaneously by etching of the insulating layer. A gate material is deposited to form the gate electrode. The source and drain contacts are formed at least in the insulating layer. The source, drain and gate output lines of the first metal level are formed in the etching mask. | 2011-03-10 |
20110059590 | METHOD FOR FORMING A REDUCED ACTIVE AREA IN A PHASE CHANGE MEMORY STRUCTURE - A phase change memory structure and method for forming the same, the method including providing a substrate comprising a conductive area; forming a spacer having a partially exposed sidewall region at an upper portion of the spacer defining a phase change memory element contact area; and, wherein the spacer bottom portion partially overlaps the conductive area. Both these two methods can reduce active area of a phase change memory element, therefore, reducing a required phase changing electrical current. | 2011-03-10 |
20110059591 | PHASE CHANGE MEMORY DEVICE HAVING DIELECTRIC LAYER FOR ISOLATING CONTACT STRUCTURE FORMED BY GROWTH, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHODS FOR MANUFACTURING THE DEVICES - A phase change memory device includes a semiconductor substrate having an impurity region and an interlayer dielectric applying a tensile stress formed on the semiconductor substrate and having contact holes exposing the impurity region. Switching elements are formed in the contact holes; and sidewall spacers interposed between the switching elements and the interlayer dielectric and formed as a dielectric layer applying a compressive stress. | 2011-03-10 |
20110059592 | NONVOLATILE MEMORY AND FABRICATION METHOD THEREOF - Non-volatile memories formed on a substrate and fabrication methods are disclosed. A bottom electrode comprising a metal layer is disposed on the substrate. A buffer layer comprising a LaNiO | 2011-03-10 |
20110059593 | Method of Integrating a MOSFET with a Capacitor - A bypass capacitor is directly integrated on top of a MOSFET chip. The capacitor comprises multi layers of conductive material and dielectric material staking on top of each other with connection vias through dielectric layer for connecting different conductive layers. The method of integrating the bypass capacitor comprises repeating steps of depositing a dielectric layer, forming connection vias through the dielectric layer, depositing a conductive layer and patterning the conductive layer. | 2011-03-10 |
20110059594 | FLASH MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - The present invention relates to flash memory devices and a method of fabricating the same. In an aspect of the present invention, the flash memory device includes trenches formed in a semiconductor substrate and having a step at their lower portion, a tunnel insulating layer formed in an active region of the semiconductor substrate, first conductive layers formed on the tunnel insulating layer, an isolation layer gap-filling between the trenches and the first conductive layers, and a second conductive layer formed on the first conductive layer and having one side partially overlapping with the isolation layers. | 2011-03-10 |
20110059595 | METHOD FOR FABRICATING VERTICAL CHANNEL TYPE NON-VOLATILE MEMORY DEVICE - A method for fabricating a vertical channel type non-volatile memory device including a plurality of memory cells stacked along channels protruding from a substrate includes: alternately forming a plurality of first material layers and a plurality of second material layers over the substrate; forming a buffer layer over the substrate with the plurality of the first material layers and the plurality of the second material layers formed thereon; forming trenches by etching the buffer layer, the plurality of the second material layers, and the plurality of the first material layers; forming a material layer for channels over the substrate to fill the trenches; and forming the channels by performing a planarization process until a surface of the buffer layer is exposed. | 2011-03-10 |
20110059596 | SEMICONDUCTOR WAFER COAT LAYERS AND METHODS THEREFOR - Formulations and processes for forming wafer coat layers are disclosed. In one embodiment, an organic surface protectant is incorporated into a wafer coat formulation deposited onto a semiconductor wafer prior to the laser scribe operation. Upon removal of the wafer coat layer, the organic surface protectant remains on the bumps and thereby prevents oxidation of the bumps between die prep and chip and attach. In an alternative embodiment, an ultraviolet light absorber is added to the wafer coat formulation to enhance the wafer coat layer's energy absorption and thereby improve the laser's ability to ablate the wafer coat layer. In an alternative embodiment, a conformal wafer coat layer is deposited on the wafer and die bumps, thereby reducing wafer coat layer thickness variations that can impact the laser scribing ability. | 2011-03-10 |
20110059597 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device capable of realizing a high yield of a large-scale semiconductor device even when a silicon carbide semiconductor including a defect is used is provided. The method of manufacturing a semiconductor device includes: a step of epitaxially growing a silicon carbide semiconductor layer on a silicon carbide semiconductor substrate; a step of polishing a surface of the silicon carbide semiconductor layer; a step of ion-implanting impurities into the silicon carbide semiconductor layer after the step of polishing; a step of performing heat treatment to activate the impurities; a step of forming a first thermal oxide film on the surface of the silicon carbide semiconductor layer after the step of performing heat treatment; a step of chemically removing the first thermal oxide film; and a step of forming an electrode layer on the silicon carbide semiconductor film. | 2011-03-10 |
20110059598 | METHOD FOR STABILIZING GERMANIUM NANOWIRES OBTAINED BY CONDENSATION - The substrate comprises a first silicon layer, a target layer made from silicon-germanium alloy-base material forming a three-dimensional pattern with first and second securing areas and at least one connecting area. The first silicon layer is tensile stressed and/or the target layer contains carbon atoms. The first silicon layer is eliminated in the connecting area. The target layer of the connecting area is thermally oxidized so as to form the nanowire. The lattice parameter of the first silicon layer is identical to the lattice parameter of the material constituting the suspended beam, after said first silicon layer has been eliminated. | 2011-03-10 |