| 10th week of 2012 patent applcation highlights part 13 |
| Patent application number | Title | Published |
|---|
| 20120056137 | Apparatus for and Method of Preparing Titanium Dioxide Sol and Paste Composition Using the Same - An apparatus for preparing a titanium dioxide (TiO | 2012-03-08 |
| 20120056138 | VEGETABLE OIL OF HIGH DIELECTRIC PURITY, METHOD FOR OBTAINING SAME AND USE IN AN ELECTRICAL DEVICE - A dielectric high purity vegetable oil—free from antioxidants and/or external additives to be used in electric equipment such as transformers, as isolating element and as cooling means and a method for obtaining the same in which the dielectric high purity vegetable oil—is obtained by means of the optimization of the bleaching steps—and deodorizing—from the Refining process—known as Modified Caustic Refining Long-Mix (RBD). | 2012-03-08 |
| 20120056139 | Lever handle for jack - An apparatus is disclosed for attachment to a jack including a first axle. The apparatus includes a fulcrum wheel disposed on a second axle, the second axle being connected directly or indirectly to the first axle. A lever has a first end connected directly or indirectly to the second axle and a second end having a terminus. A first line intersects the first axle and second axle. A second line intersects the second axle and the lever terminus. The first and second lines meet at an obtuse angle. In another aspect, an apparatus is disclosed including a jack having a first axle, an extension member, and a fulcrum wheel is disposed on a second axle connected to the extension member. A lever has a first end attachable to the extension member proximate the second axle. A method of moving a jack relative to a ground surface is also disclosed. | 2012-03-08 |
| 20120056140 | Concrete sidewalk slab lifter - A concrete sidewalk section raising apparatus is provided for pivoti-lifting one side thereof to permit leveling of the ground beneath without the necessity of destroying the concrete section, and to permit it to be lowered intact once the underlying ground is properly leveled. An A-frame support stand supports a motorized winch and cable to raise one side to about 45° from the vertical. | 2012-03-08 |
| 20120056141 | HINGED SPORTS POST OR GOAL POST RAISING AND LOWERING DEVICE - A device for raising and lowering a hinged sports post or goal post is provided. The device includes a frame with a ground engaging member and an upwardly extending post. Wheels are connected to a medial portion of the frame, and the wheels are adapted to be out of ground contact when the ground engaging member is in an operating position. A winch it is connected on an opposite end of the frame from the ground engaging member. A controller is connected to the winch and is operable by a user in order to raise or lower the hinged post that is connected to the winch cable. | 2012-03-08 |
| 20120056142 | Vehicle lift - The present invention is a vehicle lift. In particular, the present invention is directed to a vehicle lift that can be mounted to the rear of a vehicle or used as a stand-alone lift. A preferred embodiment of the lift comprises a vehicle platform mounted to two platform saddles supported by two lifting arms and two support arms. The lifting arms and support arms are pivotally attached to a mount frame at one end and the platform saddles on the other end. A spacer sleeve is attached between the lifting arms and has a lock bar inserted through it. Lift locks are attached to each end of the lock bar and can lock the lift. Two drives are attached to the mount frame at one end and to the spacer sleeve at the other end. When the platform is in a raised position, the drives are extended. | 2012-03-08 |
| 20120056143 | POSTS - A terminal post for a barrier includes an upright portion having an aperture positioned, so that in use: the aperture is located in a region of the upright portion above a ground engaging portion of the upright portion; and wherein located on one side of the aperture is a transverse reinforcing member which includes a slot for receiving a cable. At least one groove, or pair of notches is provided located beneath the aperture, and form(s) a predetermined fail line, along which the post will deform, upon receiving a substantially inline impact, which causes the transverse member to move to release the cable, and wherein the aperture is dimensioned to allow the terminal end of the cable formally retained by the slot to pass therethrough. | 2012-03-08 |
| 20120056144 | Expandable gate system - An expandable gate system is described in which (a) a main gate section comprises a plurality of parallel horizontal tubes each having an open end, and (b) a corresponding plurality of horizontal rails on a second section which are slidingly received in the open ends of the tubes of the main section. After the sliding section has been telescoped outwardly to its desired position, the sliding section can be secured to the main section to prevent further movement. | 2012-03-08 |
| 20120056145 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile memory device includes a selection element layer and a nanomaterial aggregate layer. The selection element layer includes silicon. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer includes a plurality of micro conductive bodies and fine particles dispersed in a plurality of gaps between the micro conductive bodies. At least a surface of the fine particle is made of an insulating material other than silicon oxide. | 2012-03-08 |
| 20120056146 | RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCESS DEVICE - A resistive memory structure, for example, phase change memory structure, includes one access device and two or more resistive memory cells. Each memory cell is coupled to a rectifying device to prevent parallel leak current from flowing through non-selected memory cells. In an array of resistive memory bit structures, resistive memory cells from different memory bit structures are stacked and share rectifying devices. | 2012-03-08 |
| 20120056147 | LARGE ARRAY OF UPWARD POINTINIG P-I-N DIODES HAVING LARGE AND UNIFORM CURRENT - A circuit is provided that includes a plurality of vertically oriented p-i-n diodes. Each p-i-n diode is coupled to a resistivity-switching element and includes a bottom heavily doped p-type region. When a voltage between about 1.5 volts and about 3.0 volts is applied across each p-i-n diode, a current of at least 1.5 microamps flows through 99 percent of the p-i-n diodes. Numerous other aspects are also provided. | 2012-03-08 |
| 20120056148 | Semiconductor device - A semiconductor device may include, but is not limited to: a first insulating film; a second insulating film over the first insulating film; a first memory structure between the first and second insulating films; and a third insulating film between the first and second insulating films. The first memory structure may include, but is not limited to: a heater electrode; and a phase-change memory element between the heater electrode and the second insulating film. The phase-change memory element contacts the heater electrode. The third insulating film covers at least a side surface of the phase-change memory element. Empty space is positioned adjacent to at least one of the heater electrode and the third insulating film. | 2012-03-08 |
| 20120056149 | METHODS FOR ADJUSTING THE CONDUCTIVITY RANGE OF A NANOTUBE FABRIC LAYER - Methods for adjusting and/or limiting the conductivity range of a nanotube fabric layer are disclosed. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing the nanotube elements within the fabric layer via wet chemistry techniques. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing the nanotube elements within the fabric layer via plasma treatment. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing the nanotube elements within the fabric layer via CVD treatment. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing the nanotube elements within the fabric layer via an inert ion gas implant. | 2012-03-08 |
| 20120056150 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH ELECTRODE PATTERN - A nitride semiconductor light-emitting device with an electron pattern that applies current uniformly to an active layer to improve light emission efficiency is provided. The nitride semiconductor light-emitting device includes multiple layers of a substrate, an n-type nitride layer, an active layer of a multi-quantum-well structure, and a p-type nitride layer. The nitride semiconductor light-emitting device further includes a p-electrode pattern and an n-electrode pattern. The p-electrode pattern includes one or more p-pads disposed on the p-type nitride layer, and one or more p-fingers extending from the p-pads. The n-electrode pattern includes one or more n-pads disposed on an exposed region of the n-type nitride layer to correspond to the p-pads, and one or more n-fingers extending from the n-pads. The n-fingers have identical resistance, and the p-fingers have identical resistance to improve current spreading to the active layer. | 2012-03-08 |
| 20120056151 | Memory Devices, Memory Device Constructions, Constructions, Memory Device Forming Methods, Current Conducting Devices, and Memory Cell Programming Methods - Some embodiments include memory devices having a wordline, a bitline, a memory element selectively configurable in one of three or more different resistive states, and a diode configured to allow a current to flow from the wordline through the memory element to the bitline responsive to a voltage being applied across the wordline and the bitline and to decrease the current if the voltage is increased or decreased. Some embodiments include memory devices having a wordline, a bitline, memory element selectively configurable in one of two or more different resistive states, a first diode configured to inhibit a first current from flowing from the bitline to the wordline responsive to a first voltage, and a second diode comprising a dielectric material and configured to allow a second current to flow from the wordline to the bitline responsive to a second voltage. | 2012-03-08 |
| 20120056152 | LIGHT EMITTING DEVICES - In one aspect of the invention, a light emitting device includes an epi layer having multiple layers of semiconductors formed on a substrate, a first electrode and a second electrode having opposite polarities with each other, and electrically coupled to corresponding semiconductor layers, respectively, of the epi layer, and a rod structure formed on the epi layer. The rod structure includes a plurality of rods distanced from each other. | 2012-03-08 |
| 20120056153 | SEMICONDUCTOR DEVICE - A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer. | 2012-03-08 |
| 20120056154 | METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE - A method of fabricating semiconductor light emitting device forms a laminated film by laminating an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer in order on a uneven main surface of a first substrate, forms a plurality of first electrodes, on an upper surface of the p-type nitride semiconductor layer, forms a first metal layer to cover surfaces of the plurality of first electrodes and the p-type nitride semiconductor layer, forms a second metal layer on an upper surface of the second substrate, joins the first and second metal layers by facing the first and second substrates, cuts the first substrate or forming a groove on the first substrate along a border of the light emitting element from a surface side opposite to the first metal layer on the first substrate, and irradiates a laser toward areas of the light emitting devices from a surface side opposite to the first metal layer on the first substrate to peel off the first substrate. | 2012-03-08 |
| 20120056155 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first semiconductor layer and the second semiconductor layer. The first electrode layer includes a metal portion, a plurality of first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plurality of first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers. | 2012-03-08 |
| 20120056156 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first conductivity type semiconductor layer, a light emitting layer and a second conductivity type semiconductor layer. The first conductivity type layer has a superlattice structure. First semiconductor layers and second semiconductor layers are alternately provided in the superlattice structure. The first semiconductor layers include a first nitride semiconductor and the second semiconductor layers include a second nitride semiconductor having a larger lattice constant than the first nitride semiconductor. The light emitting layer has a multi-quantum well structure. Quantum well layers and barrier layers are alternately provided in the multi-quantum well structure. The quantum well layers include a third nitride semiconductor having a smaller lattice constant than the second nitride semiconductor and the barrier layers include a fourth nitride semiconductor having a smaller lattice constant than the third nitride semiconductor. At least one of the quantum well layers has lattice spacing equal to the lattice constant of the third nitride semiconductor. | 2012-03-08 |
| 20120056157 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer. | 2012-03-08 |
| 20120056158 | LIGHT EMITTING DIODES WITH A P-TYPE SURFACE BONDED TO A TRANSPARENT SUBMOUNT TO INCREASE LIGHT EXTRACTION EFFICIENCY - An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane. | 2012-03-08 |
| 20120056159 | CONTROLLED QUANTUM DOT GROWTH - The present disclosure generally relates to techniques for controlled quantum dot growth as well as a quantum dot structures. In some examples, a method is described that includes one or more of providing a substrate, forming a defect on the substrate, depositing a layer on the substrate and forming quantum dots along the defect. | 2012-03-08 |
| 20120056160 | MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer. | 2012-03-08 |
| 20120056161 | GRAPHENE TRANSISTOR WITH A SELF-ALIGNED GATE - A graphene-based field effect transistor includes source and drain electrodes that are self-aligned to a gate electrode. A stack of a seed layer and a dielectric metal oxide layer is deposited over a patterned graphene layer. A conductive material stack of a first metal portion and a second metal portion is formed above the dielectric metal oxide layer. The first metal portion is laterally etched employing the second metal portion, and exposed portions of the dielectric metal oxide layer are removed to form a gate structure in which the second metal portion overhangs the first metal portion. The seed layer is removed and the overhang is employed to shadow proximal regions around the gate structure during a directional deposition process to form source and drain electrodes that are self-aligned and minimally laterally spaced from edges of the gate electrode. | 2012-03-08 |
| 20120056162 | NOVEL COMPOUND AND ORGANIC LIGHT-EMITTING DIODE, DISPLAY AND ILLUMINATING DEVICE USING THE SAME - According to one embodiment, there is provided a compound represented by Formula (1): | 2012-03-08 |
| 20120056163 | NOVEL COMPOUND AND ORGANIC LIGHT-EMITTING DIODE, DISPLAY AND LIGHTING DEVICE USING THE SAME - According to one embodiment, there is provided a compound represented by Formula (1): | 2012-03-08 |
| 20120056164 | DISPLAY APPARATUS - In a display apparatus including pixels, each of which has organic EL elements which emit red, green, and blue (RGB) colors and a refractive index-control layer, an electrode at a light extraction side of each organic EL element is a silver layer in contact with a charge transport layer, the refractive index-control layer is arranged on the silver layer in common with the organic EL elements which emit RGB colors, and an effective refractive index (n | 2012-03-08 |
| 20120056165 | ORGANIC LUMINESCENT MEDIUM - An organic luminescent medium including an aromatic amine derivative represented by the following formula (1) and an anthracene derivative represented by the following formula (I): | 2012-03-08 |
| 20120056166 | Organic semiconductor material, organic semiconductor thin film, and organic thin-film transistor - An organic semiconductor material is represented by the following formula (F): | 2012-03-08 |
| 20120056167 | METHOD FOR FABRICATION OF LAYERED HETEROJUNCTION POLYMERIC DEVICES - Method for growing multilayer polymer based heterojunction devices which uses selective breaking of C—H or Si—H bonds without breaking other bonds leading to fast curing for the production of layered polymer devices having polymer heterojunctions deposited by the common solution-based deposition methods. In one embodiment, a hydrogen plasma is maintained and protons are extracted with an electric field to accelerate them to an appropriate kinetic energy. The protons enter into a drift zone to collide with molecular hydrogen in gas phase. The cascades of collisions produce a high flux of hyperthermal molecular hydrogen with a flux many times of the flux of protons extracted from the hydrogen plasma. The nominal flux ratio of hyperthermal molecular hydrogen to proton is easily controllable by the hydrogen pressure in the drift zone, and by the length of the drift zone. The extraction energy of the protons is shared by these hyperthermal molecules so that average energy of the hyperthermal molecular hydrogen is easily controlled by extraction energy of the protons and the nominal flux ratio. Since unlike protons the hyperthermal molecular hydrogen projectiles do not carry any electrical charge, the high flux of hyperthermal molecular hydrogen can be used to engineer surface modification of both electrical insulating products and conductive products. In a typical embodiment, organic precursor molecules (or silicone, or silane molecules) with desirable chemical functionality or a set of functionalities and with desirable electrical properties are condensed on a substrate with a solution-based deposition method. The molecular layer is bombarded by the high flux of hyperthermal molecular hydrogen derived from a hydrogen plasma. The C—H or Si—H bonds are thus cleaved preferentially due to the kinematic selectivity of energy deposition from the hyperthermal hydrogen projectiles to the hydrogen atoms in the precursor molecules. The induced cross-linking reactions produce a stable molecular layer retaining the desirable chemical functionality/functionalities and electrical properties carried to the substrate by the precursor molecules. The molecular layer is thus cured and ready for additional molecular layer formation for the production of polymer devices which typically comprise one or more than one polymer heterojunction. | 2012-03-08 |
| 20120056168 | FLUOROPOLYMER AND THIN ORGANIC FILM COMPRISING SAME - An object of the invention is to provide a fluorine-containing polymer that is superior in both stability against doping of oxygen and solubility in an organic solvent. The invention provides a fluorine-containing polymer including a structure represented by formula (I) in a repeating unit. | 2012-03-08 |
| 20120056169 | ORGANIC ELECTROLUMINESCENT DEVICE - The present invention relates to phosphorescent organic electroluminescent devices which comprise at least one phosphorescent emitter and a mixture of at least two matrix materials in the emitting layer. | 2012-03-08 |
| 20120056170 | COMPOSITION COMPRISING AT LEAST ONE EMITTER COMPOUND AND AT LEAST ONE POLYMER HAVING CONJUGATION-INTERRUPTING UNITS - The present invention relates to a composition, containing at least one emitter compound and at least one polymer with conjugation-interrupting units, to the use of said composition in an optoelectronic apparatus and to an optoelectronic apparatus which contains said inventive composition. | 2012-03-08 |
| 20120056171 | COMPOUND FOR ORGANIC PHOTOELECTRIC DEVICE AND ORGANIC PHOTOELECTRIC DEVICE INCLUDING THE SAME - A compound for an organic photoelectric device, organic photoelectric device, and a display device, the compound being represented by the following Chemical Formula 1: | 2012-03-08 |
| 20120056172 | ORGANIC LIGHT-EMITTING DEVICE - There is provided a green-light-emitting device which has a high emission efficiency and a long continuous operational life, and which includes a pair of electrodes including an anode and a cathode; and a layer including an organic compound disposed between the pair of electrodes, wherein the layer includes a first compound represented by the general formula (I): | 2012-03-08 |
| 20120056173 | STAGGERED THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME - A staggered thin film transistor and a method of forming the staggered thin film transistor are provided. The thin film transistor includes an annealed layer stack including an oxide containing layer, a copper alloy layer deposited on the conductive oxide layer, a copper containing oxide layer, and a copper containing layer. | 2012-03-08 |
| 20120056174 | Organic light emitting display apparatus - An OLED apparatus including a substrate with a lower active layer thereon and including an oxide semiconductor for generating current in response to light; an etching prevention layer on an upper portion of the lower active layer and including a contact hole; a source/drain electrode on the etching prevention layer and electrically connected to the lower active layer through the contact hole; an upper charging electrode on the etching prevention layer and overlapping the lower active layer; a light emitting layer contacting the upper charging electrode for generating light; and a cathode electrode facing the upper charging electrode, wherein the light emitting layer is configured to be driven and emit light in response to a driving voltage applied to the upper charging electrode, and the lower active layer is configured to store current in the oxide semiconductor in response to the driving voltage applied to the upper charging electrode. | 2012-03-08 |
| 20120056175 | FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A structure with which the zero current of a field effect transistor using a conductor-semiconductor junction can be reduced is provided. A floating electrode ( | 2012-03-08 |
| 20120056176 | SPUTTERING TARGET AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to provide a deposition technique for depositing an oxide semiconductor film. Another object is to provide a method for manufacturing a highly reliable semiconductor element using the oxide semiconductor film. A novel sputtering target obtained by removing an alkali metal, an alkaline earth metal, and hydrogen that are impurities in a sputtering target used for deposition is used, whereby an oxide semiconductor film containing a small amount of those impurities can be deposited. | 2012-03-08 |
| 20120056177 | 3D INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR DETECTING CHIP MIS-ALIGNEMENT - The present application discloses a 3D integrated circuit structure and a method for detecting whether there is misalignment between chip structures. The circuit structure comprises a first chip structure which comprises a first semiconductor substrate, a first insulating layer, and a first detection structure; the first detection structure comprises detection bodies positioned on two sides of the first insulating layer, the detection body comprising a first conductor, at least two second conductors, and at least one third conductors; wherein the first conductor is located on a side of the first insulating layer and connected with ends of the second conductors; the third conductors are formed between the second conductors and insulated from the second conductors, and the first ends of the third conductors away from the first conductor are step-wise; wherein vertical distances between the third conductors and the second conductors are equal, and in the direction of the length of the third conductors, the distances between the projections of the ends of the third conductors away from the first conductor which are corresponding to each other and located on the detection bodies on the two sides are substantially the same. The present invention is suitable for optimizing the alignment between the chip structures in manufacture of integrated circuits. | 2012-03-08 |
| 20120056178 | MULTI-CHIP PACKAGES - A multi-chip package may include a package substrate, a plurality of semiconductor chips and conductive connecting members. The semiconductor chips may be sequentially stacked on the package substrate. Each of the semiconductor chips may include a signal pad and a test pad. The conductive wires may be electrically connected between the signal pad of an upper semiconductor chip among the semiconductor chips and the package substrate via the test pad of a lower semiconductor chip under the upper semiconductor chip. The test pad may be converted into the dummy pad by cutting a fuse. | 2012-03-08 |
| 20120056179 | Photo sensor, method of manufacturing photo sensor, and display apparatus - A photo sensor, a method of manufacturing the photo sensor, and a display apparatus, the photo sensor including a substrate; a light receiving unit on the substrate, the light receiving unit including an amorphous semiconductor material; a first adjacent unit and a second adjacent unit formed as one body with the light receiving unit, the first adjacent unit and the second adjacent unit being separated from each other by the light receiving unit; a first photo sensor electrode electrically connected to the first adjacent unit; and a second photo sensor electrode electrically connected to the second adjacent unit, wherein at least one of the first adjacent unit and the second adjacent unit includes a crystalline semiconductor material. | 2012-03-08 |
| 20120056180 | THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF - A thin film transistor including a substrate, a semiconductor layer, a patterned doped semiconductor layer, a source and a drain, a gate insulation layer, and a gate is provided. The semiconductor layer is disposed on the substrate. The patterned doped semiconductor layer is disposed on opposite sides of the semiconductor layer. The source and the drain are disposed on the patterned doped semiconductor layer and the opposite sides of the semiconductor layer, wherein a part of the semiconductor layer covered by the source and the drain has a first thickness, a part of the semiconductor layer disposed between the source and the drain and not covered by the source and the drain has a second thickness ranging from 200 Å to 800 Å. The gate insulation layer is disposed on the source, the drain and the semiconductor layer. The gate is disposed on the gate insulation layer. | 2012-03-08 |
| 20120056181 | METHOD OF MANUFACTURING ELECTRONIC ELEMENT AND ELECTRONIC ELEMENT - There is provided a method of manufacturing an electronic element for forming the electronic element including one or more wiring layers and an organic insulating layer stacked on a substrate. The method includes a wiring layer formation step of forming the wiring layer on the substrate; an organic insulating layer formation step of forming an organic insulating layer on the wiring layer; and an irradiation step of irradiating a short-circuit portion of the wiring layer through the organic insulating layer with a laser beam having a wavelength transmissive through the organic insulating layer. | 2012-03-08 |
| 20120056182 | Semiconductor Device and Manufacturing Method Thereof - A manufacturing method of a semiconductor device having a stacked structure in which a lower layer is exposed is provided without increasing the number of masks. A source electrode layer and a drain electrode layer are formed by forming a conductive film to have a two-layer structure, forming an etching mask thereover, etching the conductive film using the etching mask, and performing side-etching on an upper layer of the conductive film in a state where the etching mask is left so that part of a lower layer is exposed. The thus formed source and drain electrode layers and a pixel electrode layer are connected in a portion of the exposed lower layer. In the conductive film, the lower layer and the upper layer may be a Ti layer and an Al layer, respectively. The plurality of openings may be provided in the etching mask. | 2012-03-08 |
| 20120056183 | GATE INSULATOR LAYER FOR ORGANIC ELECTRONIC DEVICES - Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such polycycloolefin gate insulator layers and electronic devices encompassing such layers. | 2012-03-08 |
| 20120056184 | Organic light-emitting display apparatus and method of manufacturing the same - An organic light-emitting display apparatus includes a light-shielding layer formed on a pixel defining layer to prevent external light or internal light from entering an active layer of a thin-film transistor (TFT), thus improving the stability of the active layer, and a method of manufacturing the organic light-emitting display apparatus. | 2012-03-08 |
| 20120056185 | LIQUID CRYSTAL DISPLAY DEVICE - In an IPS type liquid crystal display device having a reduced number of layers and formed through a reduced number of photolithography steps, an off current of a TFT is prevented from increasing due to photocurrent. A drain line, a TFT drain electrode, and a source electrode each have a multilayer structure including metal and a semiconductor layer. The drain line and the semiconductor layer formed thereunder are separated from the drain electrode and the semiconductor layer formed thereunder with the drain line and the drain electrode connected by a blocking conductive film formed of ITO of which the pixel electrode is also formed. Photocurrent generated by backlight is blocked by the blocking conductive film without flowing into the TFT. Therefore, the number of photomasks required in the production process can be decreased without an increase of causing the off current of the TFT. | 2012-03-08 |
| 20120056186 | ACTIVE MATRIX SUBSTRATE, DISPLAY PANEL, AND TESTING METHOD FOR ACTIVE MATRIX SUBSTRATE AND DISPLAY PANEL - An active matrix substrate including: gate lines; source lines arranged in a direction orthogonal to each of the gate lines; a gate short-circuit line to short-circuit the gate lines; a source short-circuit line to short-circuit the source lines; gate line thin film transistors each having a drain electrode being connected to the corresponding one of the gate lines, and a source electrode being connected to the gate short-circuit line; and source line thin film transistors each having a drain electrode being connected to the corresponding one of the source lines, and a source electrode being connected to the source short-circuit line, in which the gate line thin film transistors and the source line thin film transistors are of depletion-mode, and the gate electrode of each of the source line thin film transistors is connected to the gate short-circuit line. | 2012-03-08 |
| 20120056187 | METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER, AND THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE POLYCRYSTALLINE SILICON LAYER - A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor. | 2012-03-08 |
| 20120056188 | Organic light emitting diode display and manufacturing method thereof - The described technology relates generally to an OLED display and manufacturing method thereof. The OLED display includes a substrate, a thin film transistor on the substrate and including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and an organic light emitting element coupled to the thin film transistor and including a pixel electrode, an organic emission layer, and a common electrode, wherein the semiconductor layer is formed of a polycrystalline silicon layer, and remnants and contaminants at a surface of the polycrystalline silicon layer are reduced or eliminated through an atmospheric pressure plasma treatment. The semiconductor layer is formed of a polycrystalline silicon layer where remnants and contaminants at the surface thereof are reduced or eliminated through an atmospheric pressure plasma treatment. | 2012-03-08 |
| 20120056189 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE USING THE SAME - A thin film transistor includes a substrate, a semiconductor layer provided on the substrate and crystallized by using a metal catalyst, a gate electrode insulated from and disposed on the semiconductor layer, and a getter layer disposed between the semiconductor layer and the gate electrode and formed with a metal oxide having a diffusion coefficient that is less than that of the metal catalyst in the semiconductor layer. | 2012-03-08 |
| 20120056190 | EL Display Device and a Method of Manufacturing the Same - To provide a high throughput film deposition means for film depositing an organic EL material made of polymer accurately and without any positional shift. A pixel portion is divided into a plurality of pixel rows by a bank, and a head portion of a thin film deposition apparatus is scanned along a pixel row to thereby simultaneously apply a red light emitting layer application liquid, a green light emitting layer application liquid, and a blue light emitting layer application liquid in stripe shapes. Heat treatment is then performed to thereby form light emitting layers luminescing each of the colors red, green, and blue. | 2012-03-08 |
| 20120056191 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND POWER SUPPLY APPARATUS - A semiconductor device includes a GaN electron transport layer provided over a substrate; a first AlGaN electron supply layer provided over the GaN electron transport layer; an AlN electron supply layer provided over the first AlGaN electron supply layer; a second AlGaN electron supply layer provided over the AlN electron supply layer; a gate recess provided in the second AlGaN electron supply layer and the AlN electron supply layer; and a gate electrode provided over the gate recess. | 2012-03-08 |
| 20120056192 | COMPOUND SEMICONDUCTOR IMAGE SENSOR - A stack-type image sensor using a compound semiconductor. The stack-type image sensor includes a stack of photoelectric conversion units which are sequentially arranged in a light incident direction and which absorb light in ascending order of a wavelength from shortest to longest. | 2012-03-08 |
| 20120056193 | Series Connected Segmented LED - A light source and method for making the same are disclosed. The light source includes a conducting substrate, and a light emitting structure that is divided into segments. The light emitting structure includes a first layer of semiconductor material of a first conductivity type deposited on the substrate, an active layer overlying the first layer, and a second layer of semiconductor material of an opposite conductivity type from the first conductivity type overlying the active layer. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first layer in the first segment to the second layer in the second segment. A power contact is electrically connected to the second layer in the first segment, and a second power contact electrically connected to the first layer in the second segment. | 2012-03-08 |
| 20120056194 | BARRIER STRUCTURES AND METHODS OF FORMING SAME TO FACILITATE SILICON CARBIDE EPITAXY AND SILICON CARBIDE-BASED MEMORY FABRICATION - Embodiments of the invention relate generally to semiconductors and semiconductor fabrication techniques, and more particularly, to devices, integrated circuits, substrates, wafers and methods to form barrier structures to facilitate formation of silicon carbide epitaxy on a substrate, such as a silicon-based substrate, for fabricating various silicon carbide-based semiconductor devices, including silicon carbide-based memory elements and cells. In some embodiments, a semiconductor wafer includes a silicon substrate, a barrier-seed layer disposed over the silicon substrate, and a silicon carbide layer formed over the barrier-seed layer. The semiconductor wafer can be used to form a variety of SiC-based semiconductor devices. In one embodiment, a silicon carbide-based memory element is formed to include barrier-seed layer, multiple silicon carbide layers formed over the barrier-seed layer, and a dielectric layer formed over the multiple silicon carbide layers. | 2012-03-08 |
| 20120056195 | SEMICONDUCTOR DEVICE - One embodiment of a semiconductor device includes: a silicon carbide substrate including first and second principal surfaces; a first-conductive-type silicon carbide layer on the first principal surface; a second-conductive-type first silicon carbide region at a surface of the first silicon carbide layer; a first-conductive-type second silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type third silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type fourth silicon carbide region formed between the first silicon carbide region and the second silicon carbide region, and having an impurity concentration higher than that of the first silicon carbide region; a gate insulator; a gate electrode formed on the gate insulator; an inter-layer insulator; a first electrode connected to the second silicon carbide region and the third silicon carbide region; and a second electrode on the second principal surface. | 2012-03-08 |
| 20120056196 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device according to an embodiment includes a first-conductive-type semiconductor substrate; a first-conductive-type first semiconductor layer formed on the semiconductor substrate, and having an impurity concentration lower than that of the semiconductor substrate; a second-conductive-type second semiconductor layer epitaxially formed on the first semiconductor layer; and a second-conductive-type third semiconductor layer epitaxially formed on the second semiconductor layer, and having an impurity concentration higher than that of the second semiconductor layer. The semiconductor device also includes a recess formed in the third semiconductor layer, and at least a corner portion of a side face and a bottom surface is located in the second semiconductor layer. The semiconductor device also includes a first electrode in contact with the third semiconductor layer; a second electrode connected to the first electrode while being in contact with the second semiconductor layer at the bottom surface of the recess; and a third electrode in contact with a lower surface of the semiconductor substrate. | 2012-03-08 |
| 20120056197 | SEMICONDUCTOR RECTIFYING DEVICE - A wide bandgap semiconductor rectifying device of an embodiment includes a first-conductive-type wide bandgap semiconductor substrate and a first-conductive-type semiconductor layer that has an impurity concentration lower than that of the substrate. The device also includes a first-conductive-type first semiconductor region, and a second-conductive-type second semiconductor region that is formed between the first regions. The device also includes second-conductive-type third semiconductor regions in which at least part of the third regions are connected to the second wide bandgap semiconductor region, the third regions being formed between the first regions, the third regions having a width narrower than that of the second region. The device also includes a first electrode and a second electrode. In the device, a direction in which a longitudinal direction of the third regions are projected onto a (0001) plane of the layer has an angle of 90±30 degrees with respect to a <11-20> direction of the layer. A gap between the third regions is not lower than 2 | 2012-03-08 |
| 20120056198 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device according to an embodiment includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a first semiconductor region of a second conductivity type, a second semiconductor region of the second conductivity type, a first electrode and a second electrode. The first semiconductor region is formed on at least a part of the first semiconductor layer formed on the semiconductor substrate. The second semiconductor region is formed on another part of the first semiconductor layer to reach an inside of the first semiconductor layer and having an impurity concentration higher than that of the first semiconductor region. The first electrode is formed on the second semiconductor region and a third semiconductor regions formed in a part of the first semiconductor region. The second electrode is formed to be in contact with a rear surface of the semiconductor substrate. | 2012-03-08 |
| 20120056199 | Self-supporting CVD diamond film and method for producing a self-supporting CVD diamond film - The invention relates to a self-supporting CVD diamond film comprising a plurality of diamond layers ( | 2012-03-08 |
| 20120056200 | INTEGRATED ELECTRONIC DEVICE WITH EDGE-TERMINATION STRUCTURE AND MANUFACTURING METHOD THEREOF - An embodiment of an integrated electronic device formed in a semiconductor body delimited by a lateral surface, which includes: a substrate made of a first semiconductor material; a first epitaxial region made of a second semiconductor material, which overlies the substrate and defines a first surface; a second epitaxial region made of a third semiconductor material, which overlies the first surface and is in contact with the first epitaxial region, the third semiconductor material having a bandgap narrower than the bandgap of the second semiconductor material; an active area, extending within the second epitaxial region and housing at least one elementary electronic component; and an edge structure, arranged between the active area and the lateral surface, and including a dielectric region arranged laterally with respect to the second epitaxial region, which overlies the first surface and is in contact with the first epitaxial region. | 2012-03-08 |
| 20120056201 | INSULATED GATE BIPOLAR TRANSISTOR - An IGBT, which is a vertical type IGBT allowing for reduced on-resistance while restraining defects from being produced, includes: a silicon carbide substrate, a drift layer, a well region, an n | 2012-03-08 |
| 20120056202 | SEMICONDUCTOR DEVICE - A MOSFET, which is a semiconductor device allowing for reduced on-resistance while restraining stacking faults from being produced due to heat treatment in a device manufacturing process, includes: a silicon carbide substrate; an active layer made of single-crystal silicon carbide and disposed on one main surface of the silicon carbide substrate; a source contact electrode disposed on the active layer; and a drain electrode formed on the other main surface of the silicon carbide substrate. The silicon carbide substrate includes: a base layer made of silicon carbide; and a SiC layer made of single-crystal silicon carbide and disposed on the base layer. Further, the base layer has an impurity concentration greater than 2×10 | 2012-03-08 |
| 20120056203 | SEMICONDUCTOR DEVICE - A JFET, which is a semiconductor device allowing for reduced manufacturing cost, includes: a silicon carbide substrate; an active layer made of single-crystal silicon carbide and disposed on one main surface of the silicon carbide substrate; a source electrode disposed on the active layer; and a drain electrode formed on the active layer and separated from the source electrode. The silicon carbide substrate includes: a base layer made of single-crystal silicon carbide, and a SiC layer made of single-crystal silicon carbide and disposed on the base layer. The SiC layer has a defect density smaller than that of the base layer. | 2012-03-08 |
| 20120056204 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting device which includes a first TFT, a second TFT, a first pixel electrode, a second pixel electrode, an organic compound layer, a first opposing electrode and a second opposing electrode. The organic compound layer is formed on the first pixel electrode and the second pixel electrode. The first opposing electrode and a second opposing electrode are formed on the organic compound layer. When the first pixel electrode and the second opposing electrode are anodes, the second pixel electrode and the first opposing electrode are cathodes. When the first pixel electrode and the second opposing electrode are cathodes, the second pixel electrode and the first opposing electrode are anodes. | 2012-03-08 |
| 20120056205 | ORIGAMI SENSOR - In one aspect, the invention provides an optical sensor comprising a flexible substrate and an optical element being positioned on the substrate. The flexible substrate comprises deformations affecting the optical element and the deformations are provided in a substrate deformation zone at least partly surrounding the optical element. | 2012-03-08 |
| 20120056206 | SOLID STATE LIGHTING DIES WITH QUANTUM EMITTERS AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting dies and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting die includes a substrate material, a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The second semiconductor material has a surface facing away from the substrate material. The solid state lighting die also includes a plurality of openings extending from the surface of the second semiconductor material toward the substrate material. | 2012-03-08 |
| 20120056207 | PIXEL ARRAY - A pixel array includes pixel sets. Each pixel set includes a first and second scan lines arranged in parallel on a substrate, a data line not parallel to the first and second scan lines, a first active device electrically connecting the first scan line and the data line, a second active device electrically connecting the second scan line and the data line, a first pixel electrode electrically connecting the first active device, a second pixel electrode electrically connecting the second active device, and an auxiliary electrode pattern that includes a connecting portion and a first and second branch portions. A gap is between the first and second pixel electrodes. The connecting portion underneath the gap between the first and second pixel electrodes partially overlaps the first and second pixel electrodes. The first and second branch portions connect the connecting portion and partially overlap the first and second pixel electrodes, respectively. | 2012-03-08 |
| 20120056208 | SYSTEM FOR DISPLAYING IMAGES - A system for displaying images includes an organic light-emitting device (OLED) including an anode layer on a substrate, a cathode layer, and an organic light-emitting layer disposed between the anode and cathode layers. The cathode layer includes a metal layer in direct contact with the organic light-emitting layer, a transparent conductive layer, and an organic buffer layer with a carrier mobility in a range of 10 | 2012-03-08 |
| 20120056209 | LIGHT EMITTING DEVICE - A light emitting device according to one embodiment includes a board; plural first light emitting elements mounted on the board to emit light having a wavelength of 250 nm to 500 nm; plural second light emitting elements mounted on the board to emit light having a wavelength of 250 nm to 500 nm; a first fluorescent layer formed on each of the first light emitting elements, the first fluorescent layer including a first phosphor; and a second fluorescent layer formed on each of the second light emitting elements, the second fluorescent layer including a second phosphor. The second phosphor is higher than the first phosphor in luminous efficiency at 50° C., and is lower than the first phosphor in the luminous efficiency at 150° C. | 2012-03-08 |
| 20120056210 | LIGHT EMITTING APPARATUS AND MULTI-SURFACE PATTERN SUBSTRATE - A light emitting apparatus capable of increasing the number of substrates formed from one multi-surface pattern substrate and capable of reducing the manufacturing cost. The light emitting apparatus ( | 2012-03-08 |
| 20120056211 | POLARIZING FILM, OPTICAL FILM LAMINATE INCLUDING POLARIZING FILM, STRETCHED LAMINATE FOR USE IN PRODUCTION OF OPTICAL FILM LAMINATE INCLUDING POLARIZING FILM, PRODUCTION METHODS FOR THEM, AND ORGANIC EL DISPLAY DEVICE HAVING POLARIZING FILM - Provided is a continuous web of polarizing film for an organic EL display device which has a thickness of 10 μm or less and exhibits high optical characteristics. The polarizing film for an organic EL display device is made of a polyvinyl alcohol type resin having a molecularly oriented dichroic material, and formed through stretching to have a thickness of 10 μm or less and exhibit optical characteristics satisfying the following conditions: T≧42.5; and P≧99.5, wherein T is a single layer transmittance, and P is a polarization rate. The polarizing film for an organic EL display device may be prepared by subjecting a laminate comprising a non-crystallizable ester type thermoplastic resin substrate and the polyvinyl alcohol type resin layer formed on the substrate, to 2-stage stretching consisting of preliminary in-air stretching and in-boric-acid-solution stretching. | 2012-03-08 |
| 20120056212 | LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF - A light-emitting device includes: a carrier; a light-emitting structure formed on the carrier, wherein the light-emitting structure has a first surface facing the carrier, a second surface opposite to the first surface, and an active layer between the first surface and the second surface; a plurality of first trenches extended from the first surface and passing through the active layer so a plurality of light-emitting units is defined; and a plurality of second trenches extended from the second surface and passing through the active layer of each of the plurality of light-emitting units. | 2012-03-08 |
| 20120056213 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, DISPLAY DEVICE, AND ELECTRONIC APPARATUS - A light-emitting element includes: an anode; a cathode; a light-emitting layer which is provided between the anode and the cathode and emits light as the anode and the cathode are electrically connected to each other; and an organic layer which is provided between the anode and the light-emitting layer to come in contact with both layers. The organic layer has a first function of transporting holes and a second function of preventing electrons infiltrating from the light-emitting layer from staying in the organic layer. | 2012-03-08 |
| 20120056214 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting device of the invention includes a thin film transistor, an insulating layer covering the thin film transistor, an electrode which is electrically connected to the thin film transistor through a contact hole formed on the insulating layer, and a light emitting element formed by interposing a light emitting layer between a first electrode which is electrically connected to the electrode and a second electrode. The light emitting device further includes a layer formed of a different material from that of the insulating layer only between the electrode and the first electrode over the insulating layer and the insulating layer. | 2012-03-08 |
| 20120056215 | LED PACKAGE HAVING AN ARRAY OF LIGHT EMITTING CELLS COUPLED IN SERIES - Disclosed is a light emitting diode (LED) package having an array of light emitting cells coupled in series. The LED package comprises a package body and an LED chip mounted on the package body. The LED chip has an array of light emitting cells coupled in series. Since the LED chip having the array of light emitting cells coupled in series is mounted on the LED package, it can be driven directly using an AC power source. | 2012-03-08 |
| 20120056216 | LIGHT EMITTING DEVICE - A light emitting device according to one embodiment includes: a board; plural first light emitting units each including a first light emitting element and a first fluorescent layer formed on the first light emitting element having a green phosphor; plural second light emitting units each including a second light emitting element and a second fluorescent layer formed on the second light emitting element having a red phosphor; the second fluorescent layers and the first fluorescent layers being separated in a non-contact manner with gas interposed there between; and plural third light emitting units each including a third light emitting element and a resin layer formed on the third light emitting element having neither a green phosphor nor the red phosphor, the third light emitting units being disposed between the first light emitting units and the second light emitting units. | 2012-03-08 |
| 20120056217 | LIGHT EMITTING DIODE PACKAGE - Disclosed herein is a light emitting diode package including a package body having a cavity, a light emitting diode chip having a plurality of light emitting cells connected in series to one another, a phosphor converting a frequency of light emitted from the light emitting diode chip, and a pair of lead electrodes. The light emitting cells are connected in series between the pair of lead electrodes. | 2012-03-08 |
| 20120056218 | LEAD FRAME PACKAGE WITH MULTIPLE BENDS - A lead frame package with multiple bends suitable for a light-emitting device, as well as a non-optical device is disclosed. A light-emitting device incorporating the lead frame package with multiple bends may comprise a light source die, a body and a plurality of leads. A non-optical device incorporating the lead frame package may comprise a die, a body and a plurality of leads. Each of the leads has at least first, second, and third bends defining each of the leads into at least first, second, third and fourth sections. At least the second section, the third section and the second bends of each lead are encapsulated by an encapsulating material forming the body. | 2012-03-08 |
| 20120056219 | BACK-TO-BACK SOLID STATE LIGHTING DEVICES AND ASSOCIATED METHODS - Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs. | 2012-03-08 |
| 20120056220 | SEMICONDUCTOR LIGHT EMMITING DEVICE - According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction. | 2012-03-08 |
| 20120056221 | LIGHT EMITTING ELEMENT - The present invention provides a light emitting element, which includes a light emitting diode (LED) chip and a wavelength-converting layer arranged on a surface of the LED chip, the wavelength-converting layer to convert a wavelength of light emitted from the LED chip, wherein at least a portion of the wavelength-converting layer has a width greater than the width of the surface of the LED chip. | 2012-03-08 |
| 20120056222 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting layer, a first electrode layer, and a second electrode layer. The light emitting layer is between the first semiconductor layer and the second semiconductor layer. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer. The first electrode layer includes a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer. The metal portion contacts the second semiconductor layer. An equivalent circular diameter of a configuration of the opening portions as viewed along the direction is not less than 10 nanometers and not more than 5 micrometers. | 2012-03-08 |
| 20120056223 | LED PACKAGE STRUCTURE AND PACKAGING METHOD THEREOF - A LED package structure includes a supporting substrate, a first electrically-conductive structure, a LED chip, an insulating layer and a second electrically-conductive structure. The supporting substrate includes a top surface, a bottom surface and a first channel. The first electrically-conductive structure is filled in the first channel and partially formed on the top and bottom surfaces of the supporting substrate. The LED chip is disposed over the supporting substrate. The insulating layer is formed over the supporting substrate and on bilateral sides of the LED chip. The insulating layer has a second channel corresponding to the first electrically-conductive structure. The second electrically-conductive structure is filled in the second channel and partially formed on the insulating layer, and connected with an electrode of the LED chip. The LED chip and the top and bottom surfaces of the supporting substrate are connected with each other through the first and second electrically-conductive structures. | 2012-03-08 |
| 20120056224 | LIGHT EMITTING DEVICE - A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting element; and a sialon green phosphor that is disposed on the light emitting element. | 2012-03-08 |
| 20120056225 | LIGHT EMITTING DEVICE - A light emitting device according to one embodiment includes a board; a light emitting element mounted on the board, emitting light having a wavelength of 250 nm to 500 nm; a red fluorescent layer formed on the element, including a red phosphor expressed by equation (1), having a semicircular shape with a diameter r; | 2012-03-08 |
| 20120056226 | CHIP PACKAGE - An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device disposed at the first surface; a protection layer disposed on the second surface of the substrate, wherein the protection layer has an opening; a conducting bump disposed on the second surface of the substrate and filled in the opening; a conducting layer disposed between the protection layer and the substrate, wherein the conducting layer electrically connects the optoelectronic device to the conducting bump; and a light shielding layer disposed on the protection layer, wherein the light shielding layer does not contact with the conducting bump. | 2012-03-08 |
| 20120056227 | LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF - A light emitting diode (LED) package is disclosed. The LED package includes a lead frame comprising a thermal pad and at least two electrode pads disposed at a distance from the thermal pad; at least one LED mounted on the thermal pad and electrically connected with the at least two electrode pads through a wire; a package mold comprising a first cavity to receive the thermal pad and the at least two electrode pads and to partially expose the thermal pad and the at least two electrode pads through a first surface of the package mold, the first surface on which the at least one LED is mounted, and exposing the thermal pad and the at least two electrode pads through a surface coplanar with a second surface opposite to the first surface; and a molding unit disposed in the first cavity. | 2012-03-08 |
| 20120056228 | LED CHIP MODULES, METHOD FOR PACKAGING THE LED CHIP MODULES, AND MOVING FIXTURE THEREOF - A method for packaging LED chip modules is provided. First, a first sacrificial layer is disposed on a substrate. Afterwards, LED chips are synchronously disposed on the first sacrificial layer before the first sacrificial layer cures. Next, a first material, a second sacrificial layer, and a second material are used to form a support layer on the first sacrificial layer. The first sacrificial layer and the second sacrificial layer are then removed, so that LED chip modules are obtained, wherein each LED chip module has a corresponding support layer. Furthermore, a moving fixture is provided to synchronously remove chips from a wafer and dispose them on the sacrificial layer. | 2012-03-08 |
| 20120056229 | LIGHT EMITTING STRUCTURE AND MANUFACTURING METHOD THEREOF - A light-emitting structure comprises a semiconductor light-emitting element which includes a first connection point and a second connection point. The light-emitting structure further includes a first electrode electrically connected to the first connection point, and a second electrode electrically connected the second connection point. The first electrode and the second electrode can form a concave on which the semiconductor light-emitting element is located. | 2012-03-08 |
| 20120056230 | LIGHT EMITTING DEVICE - A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer under the first conductive semiconductor layer; a second conductive semiconductor layer under the active layer; a current blocking region under the second conductive semiconductor layer; a second electrode layer under the second conductive semiconductor layer and the current blocking region; and a first electrode layer including a protrusion protruding toward the first conductive semiconductor layer arranged, on the first conductive semiconductor layer. | 2012-03-08 |
| 20120056231 | ELECTROLUMINESCENT DEVICE - The invention relates to an electroluminescent device ( | 2012-03-08 |
| 20120056232 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer. | 2012-03-08 |
| 20120056233 | LED PACKAGE - An LED package includes a base, an LED chip and an encapsulation. The LED chip is mounted on the base. The encapsulation encapsulates the LED chip. A heat dissipating plate is sandwiched between the LED chip and the base. The heat dissipating plate includes a first surface and a second surface. The LED chip is mounted on the first surface of the heat dissipating plate and has an interface engaging with the first surface of the heat dissipating plate. The first surface of the heat dissipating plate has an area greater than that of the interface. The second surface of the heat dissipating plate is attached to the base. | 2012-03-08 |
| 20120056234 | HEAT DISSIPATION MATERIAL AND LIGHT EMITTING DIODE PACKAGE INCLUDING A JUNCTION PART MADE OF THE HEAT DISSIPATION MATERIAL - Disclosed are a heat dissipation material comprising a metallic glass and an organic vehicle and a light emitting diode package including at least one of a junction part, wherein the junction part includes a heat dissipation material including a metallic glass. | 2012-03-08 |
| 20120056235 | OPTOELECTRONIC MODULE AND METHOD OF PRODUCING AN OPTOELECTRONIC MODULE - An optoelectronic module includes a radiation-emitting semiconductor component, an electrical component and a carrier substrate. The carrier substrate includes a top and a bottom, wherein first electrical connections are arranged on the bottom and second electrical connections are arranged on the top. The electrical component is arranged on the top of the carrier substrate and is electrically conductively connected with the first electrical connections. The radiation-emitting semiconductor component is arranged on the side of the electrical component remote from the carrier substrate. The radiation-emitting semiconductor component furthermore includes conductive structures electrically conductively connected with the second electrical connections. | 2012-03-08 |
| 20120056236 | LOW GAS PERMEABLE SILICONE RESIN COMPOSITION AND OPTOELECTRONIC DEVICE - A silicone resin composition comprising (A) an organopolysiloxane containing silicon-bonded aryl and alkenyl groups in a molecule, (B) an organohydrogenpolysiloxane, and (C) an addition reaction catalyst is low gas permeable. An optoelectronic device encapsulated therewith is highly reliable. | 2012-03-08 |
