| 10th week of 2013 patent applcation highlights part 13 |
| Patent application number | Title | Published |
|---|
| 20130056683 | COMPOSITIONS AND METHODS FOR PROMOTING FATTY ACID PRODUCTION IN PLANTS - The invention relates to methods and products for producing fatty acids by manipulating metabolic function in plants and fungus. The fatty acids generated according to the invention may be useful in the production of biofuels. | 2013-03-07 |
| 20130056684 | TREATMENT OF A CARBON DIOXIDE-RICH FRACTION OF A SYSTEM FOR PRODUCTION OF HYDROGEN AND CARBON MONOXIDE - The invention relates to a method for treatment of a carbon dioxide-rich gas fraction ( | 2013-03-07 |
| 20130056685 | TWO STAGE GASIFIER FOR GENERATING SYNGAS - The present subject matter describes a gasification system ( | 2013-03-07 |
| 20130056686 | CURABLE RESIN COMPOSITION, ADHESIVE EPOXY RESIN PASTE, DIE-BONDING AGENT, NON-CONDUCTIVE PASTE, ADHESIVE EPOXY RESIN FILM, NON-CONDUCTIVE EPOXY RESIN FILM, ANISOTROPIC CONDUCTIVE PASTE, AND ANISOTROPIC CONDUCTIVE FILM - To provide a curable resin composition that can improve resistant properties such as thermal impact resistance even in a high-temperature and high-humidity environment and has a high adhesive property, high conduction reliability and superior crack resistant property. The curable resin composition contains an epoxy resin and an epoxy resin-use curing agent, and is characterized in that a difference between a maximum value of tan δ in a viscoelastic spectrum and a value of the tan δ at −40° C. thereof is 0.1 or more. | 2013-03-07 |
| 20130056687 | CONDUCTIVE PASTE FOR SCREEN PRINTING - Provided is a conductive paste for screen printing, capable of being baked at a low temperature of 150° C. or lower and being printed on a plastic substrate that cannot be subjected to printing at high temperatures. The conductive paste for screen printing contains metal nanoparticles (Y) protected by an organic compound (X) containing a basic nitrogen atom; a deprotecting agent (A) for the metal nanoparticles; and an organic solvent (B), wherein an aliphatic monocarboxylic acid having 6 to 10 carbon atoms and/or an unsubstituted aliphatic dicarboxylic anhydride is used as the deprotecting agent (A) for the metal nanoparticles, and a polyalkylene glycol is used as the organic solvent (B). | 2013-03-07 |
| 20130056688 | NANOMETAL-POLYMER COMPOSITE CONDUCTIVE FILM AND METHOD FOR PREPARING THE SAME - A method for preparing a nanometal-polymer composite conductive film includes the steps of (1) mixing a metal oxide with a polymer solution; (2) coating a substrate with a solution resulting from step (1), followed by drying the resultant solution to form a film; (3) performing thermal treatment on the film formed in step (2); and (4) sintering the film thermally treated in step (3). The method dispenses with any reducing agent or dispersing agent but allows nanometallic particles to be formed in situ and thereby reduces surface resistance of the polymer film efficiently. | 2013-03-07 |
| 20130056689 | HIGHLY CONDUCTIVE ELECTRICALLY CONDUCTIVE ADHESIVES - The present invention provides for a relatively simple method to decrease the electrical resistivity of conductive adhesives by in-situ nanoparticle formation and sintering using a reducing agent. The reducing agent was found to cause sintering within the conductive adhesive by facilitating the reduction of the silver salts of fatty acids on the surface of silver flakes, leading to the formation of nano-/submicron-silver necks. These silver necks bridge neighboring silver flakes, decreasing the contact resistance between flakes within the conductive adhesives. The reducing agent also removes at least a portion of the lubricant commonly found on silver flakes used in conductive adhesives, thus reducing the tunneling resistance between the silver flakes. | 2013-03-07 |
| 20130056690 | MALEIMIDE-BASED COMPOUND, AND TAUTOMER OR STEREOISOMER THEREOF, DYE FOR PHOTOELECTRIC CONVERSION, AND SEMICONDUCTOR ELECTRODE, PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTROCHEMICAL CELL USING THE SAME - It is an object to provide a maleimide-based compound having excellent photoelectric conversion characteristics, and a tautomer or a stereoisomer thereof, a dye for photoelectric conversion, a semiconductor electrode, a photoelectric conversion element, and a photoelectrochemical cell. In order to accomplish the above-described objects, a dye for photoelectric conversion including at least one compound represented by the following general formula (1) is provided. | 2013-03-07 |
| 20130056691 | Metal Oxide Semiconductor Films, Structures, and Methods - Materials and structures for improving the performance of semiconductor devices include ZnBeO alloy materials, ZnCdOSe alloy materials, ZnBeO alloy materials that may contain Mg for lattice matching purposes, and BeO material. The atomic fraction x of Be in the ZnBeO alloy system, namely, Zn | 2013-03-07 |
| 20130056692 | Vehicle Lifting Assembly - A yoke for receiving, raising, and lowering a vehicle having left and right tires by engagement with the left and right tires, the yoke having a left capture frame; a right capture frame; a span member having left and right ends, and having a medial jack clearance space arch; left and right socket joints for mounting the left and right capture frames upon the span member's left and right ends; and a rotation stopping pin fixedly attached to the arch, the rotation stopping pin being fitted for engaging a socket within a distal end of a trolley jack's lift arm. | 2013-03-07 |
| 20130056693 | LIFTING DEVICE - A lifting device that raises persons with limited mobility from a first position, such as lying on the floor, to a second position, such as a sitting or standing position, and vice versa. The lifting device has a base, a plurality of supports which extend from the base and a platform connected to the supports. The platform travels upon the supports by way of a plurality of gears which are connected to a power source which is controlled by a controller. In this way the platform travels between a first position, such as adjacent the floor, and the second position, such as sitting or standing. | 2013-03-07 |
| 20130056694 | GEAR REDUCTION ASSEMBLY AND WINCH INCLUDING GEAR REDUCTION ASSEMBLY - A gear reduction assembly may include a main input shaft, a carrier coupled to the main input shaft, and at least one carrier shaft coupled to the carrier and spaced from the main input shaft. The gear reduction assembly may also include at least one spur gear pair including a first spur gear coupled to the carrier shaft, and a second spur gear, wherein the first and second spur gears are coupled to one another such that they rotate together. The gear reduction assembly also includes a first internal gear engaged with the first spur gear, a second internal gear engaged with the second spur gear, and a hub associated with the first internal gear. The first internal gear has a first number of teeth, the second internal gear has a second number of teeth, and the first and second numbers of teeth differ by from one to five teeth. | 2013-03-07 |
| 20130056695 | ROPE ASCENDER DEVICE AND METHOD FOR USE THEREOF - A portable ascender device on a rope comprising an actuation element, manual or motor-driven, a nautical winch provided with a self-tailing arrangement, rotated by the actuation element, and at least one first forced passage of the rope in proximity to the winch. The first forced passage is arranged upstream of the winch with respect to the rope winding direction. A method for hoisting oneself by means of such device along a generally vertically stretched rope, and two methods for descending along the rope by means of the same device, respectively in active mode and in passive mode, are also described. | 2013-03-07 |
| 20130056696 | DEVICE FOR GUIDING A ROPE - The guiding device ( | 2013-03-07 |
| 20130056697 | FENCE RAIL WITH CONCEALED FASTENER - A fence rail includes a detachable fastener cover that covers and conceals a fastener chamber. Through the use of a knuckle and a catch fastening system, moisture is prevented from entering the fastener chamber. The fastener chamber allows for securing pickets to the rail using a means for fastening as close to the top of the rail as possible thereby allowing for significant racking of the fence. | 2013-03-07 |
| 20130056698 | RESISTIVE MEMORY DEVICE HAVING VERTICAL TRANSISTORS AND METHOD FOR MAKING THE SAME - The present invention relates to resistive memory devices incorporating therein vertical selection transistors and methods for making the same. A resistive memory device comprises a semiconductor substrate having a first type conductivity; a plurality of vertical selection transistors formed on the semiconductor substrate in an array, each of the plurality of vertical selection transistors including a semiconductor pillar protruded from the semiconductor substrate, top region of the semiconductor pillar having a second type conductivity opposite to the first type conductivity provided in the semiconductor substrate; and a gate electrode surrounding the semiconductor pillar with a gate dielectric layer interposed therebetween, the gate electrode being lower in height than the semiconductor pillar; a plurality of contact studs disposed on top of the vertical selection transistors; a plurality of resistive memory elements disposed on top of the contact studs; a plurality of parallel word lines connecting the vertical selection transistors by way of respective gate electrodes, the parallel word lines extending along a first direction; a plurality of parallel bit lines connecting the resistive memory elements, the parallel bit lines extending along a second direction different from the first direction provided in the parallel word lines; and a plurality of parallel source lines with the second type conductivity formed in top regions of the semiconductor substrate in between rows of the semiconductor pillars, wherein the source lines and the top regions of the semiconductor pillars function as source and drain, respectively. | 2013-03-07 |
| 20130056699 | PHASE CHANGE MEMORY CELL HAVING VERTICAL CHANNEL ACCESS TRANSISTOR - A device includes a substrate having a first region and a second region. The first region comprises a first field effect transistor having a horizontal channel region within the substrate, a gate overlying the horizontal channel region, and a first dielectric covering the gate of the first field effect transistor. The second region of the substrate includes a second field effect transistor comprising a first terminal extending through the first dielectric to contact the substrate, a second terminal overlying the first terminal and having a top surface, and a vertical channel region separating the first and second terminals. The second field effect transistor also includes a gate on the first dielectric and adjacent the vertical channel region, the gate having a top surface that is co-planar with the top surface of the second terminal. | 2013-03-07 |
| 20130056700 | DEFECT GRADIENT TO BOOST NONVOLATILE MEMORY PERFORMANCE - Embodiments of the present invention generally relate to a resistive switching nonvolatile memory element that is formed in a resistive switching memory device that may be used in a memory array to store digital data. The memory element is generally constructed as a metal-insulator-metal stack. The resistive switching portion of the memory element includes a getter portion and/or a defect portion. In general, the getter portion is an area of the memory element that is used to help form, during the resistive switching memory device's fabrication process, a region of the resistive switching layer that has a greater number of vacancies or defects as compared to the remainder of resistive switching layer. The defect portion is an area of the memory element that has a greater number of vacancies or defects as compared to the remainder of the resistive switching layer, and is formed during the resistive switching memory device's fabrication process. The addition of the getter or defect portions in a formed memory device generally improves the reliability of the resistive switching memory device, improves the switching characteristics of the formed memory device and can eliminate or reduce the need for the time consuming additional post fabrication “burn-in” or pre-programming steps. | 2013-03-07 |
| 20130056701 | NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY DEVICE - A nonvolatile memory element including a resistance variable element configured to reversibly change between a low-resistance state and a high-resistance state in response to electric signals with different polarities; and a current controlling element configured such that when a current flowing when a voltage whose absolute value is a first value which is larger than 0 and smaller than a predetermined voltage value and whose polarity is a first polarity is applied is a first current and a current flowing when a voltage whose absolute value is the first value and whose polarity is a second polarity is applied is a second current, the first current is higher than the second current, and the resistance variable element is connected with the current controlling element such that the first polarity voltage is applied to the current controlling element when the resistance variable element changes from the low-resistance to the high-resistance state. | 2013-03-07 |
| 20130056702 | ATOMIC LAYER DEPOSITION OF METAL OXIDE MATERIALS FOR MEMORY APPLICATIONS - Embodiments of the invention generally relate to nonvolatile memory devices, such as a ReRAM cells, and methods for manufacturing such memory devices, which includes optimized, atomic layer deposition (ALD) processes for forming metal oxide film stacks. The metal oxide film stacks contain a metal oxide coupling layer disposed on a metal oxide host layer, each layer having different grain structures/sizes. The interface disposed between the metal oxide layers facilitates oxygen vacancy movement. In many examples, the interface is a misaligned grain interface containing numerous grain boundaries extending parallel to the electrode interfaces, in contrast to the grains in the bulk film extending perpendicular to the electrode interfaces. As a result, oxygen vacancies are trapped and released during switching without significant loss of vacancies. Therefore, the metal oxide film stacks have improved switching performance and reliability during memory cell applications compared to traditional hafnium oxide based stacks of previous memory cells. | 2013-03-07 |
| 20130056703 | Sensor Device and Method - A graphene layer is generated on a substrate. A plastic material is deposited on the graphene layer to at least partially cover the graphene layer. The substrate is separated into at least two substrate pieces. | 2013-03-07 |
| 20130056704 | SINGLE-PHOTON GENERATOR AND METHOD OF ENHANCEMENT OF BROADBAND SINGLE-PHOTON EMISSION - A single-photon generator contains nitrogen-vacancies or other color centers in diamond as emitters of single photons which are excited by the laser beam or another optical source and can work stably under normal conditions, the metamaterial with hyperbolic dispersion as enhancing environment, and photonic guiding structure to collect and transmit single photons further. Single photons generators are fundamental elements for quantum information technologies such as quantum cryptography, quantum information storage and optical quantum computing | 2013-03-07 |
| 20130056705 | METHOD OF MANUFACTURING QUANTUM DOT LAYER AND QUANTUM DOT OPTOELECTRONIC DEVICE INCLUDING THE QUANTUM DOT LAYER - A method of manufacturing a quantum dot layer, and a quantum dot optoelectronic device including the quantum dot layer. The method includes sequentially stacking a self-assembled monolayer, a sacrificial layer, and a quantum dot layer on a source substrate; disposing a stamp on the quantum dot layer; picking up the sacrificial layer, the quantum dot layer and the stamp; and removing the sacrificial layer from the quantum dot layer using a solution that dissolves the sacrificial layer. | 2013-03-07 |
| 20130056706 | QUANTUM DOT LED LIGHT SYSTEM AND METHOD - The present disclosure provides methods of using quantum dots or Q dots or a similar nanocrystal to transfer, for example, excess LED light energy in the blue band to the red band where such LEDs tend to be deficient. This approach would balance the overall spectrum of the LED without a corresponding loss in brightness as would be the case where the light from the LED was passed through a conventional filter. The Q dots could be applied to the lens portion of the LED after the high temperature processes are completed or coated to a clear filter to be placed in the LED light path. | 2013-03-07 |
| 20130056707 | NITRIDE SEMICONDUCTOR DEVICE - In the nitride semiconductor device of the present invention, an active layer | 2013-03-07 |
| 20130056708 | UNIT PIXEL OF IMAGE SENSOR AND PHOTO DETECTOR THEREOF - A unit pixel of an image sensor and a photo detector are disclosed. The photo detector of the present invention configured to absorb light can include: a light-absorbing part configured to absorb light by being formed in a floated structure; an oxide film being in contact with one surface of the light-absorbing part; a source being in contact with one side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; a drain facing the source so as to be in contact with the other side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; and a channel interposed between the source and the drain and configured to form flow of an electric current between the source and the drain. | 2013-03-07 |
| 20130056709 | UNIT PIXEL OF IMAGE SENSOR AND PHOTO DETECTOR THEREOF - A unit pixel of an image sensor and a photo detector are disclosed. The photo detector can include: a substrate in which a V-shaped groove having a predetermined angle is formed; a light-absorbing part formed in a floated structure above the V-shaped groove and to which light is incident; an oxide film formed between the light-absorbing part and the V-shaped groove and in which tunneling occurs; a source formed adjacent to the oxide film on a slope of one side of the V-shaped groove and separated from the light-absorbing part by the oxide film; a drain formed adjacent to the oxide film on a slope of the other side of the V-shaped groove and separated from the light-absorbing part by the oxide film; and a channel interposed between the source and the drain along the V-shaped groove to form flow of an electric current between the source and the drain. | 2013-03-07 |
| 20130056710 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus includes a first insulating layer, a second insulating layer on the first insulating layer and including an unevenness portion, a third insulating layer on the second insulating layer, a pixel electrode on the third insulating layer, an opposite electrode facing the pixel electrode, and an organic emission layer between the pixel electrode and the opposite electrode; a thin film transistor including an active layer, a gate electrode, and source/drain electrodes connected to the active layer, the first insulating layer being between the active layer and the gate electrode and the second insulating layer being between the gate electrode, and the source/drain electrodes; and a capacitor including a lower electrode on a same layer as the gate electrode, a dielectric layer of a same material as the third insulating layer, and an upper electrode on a same layer as the pixel electrode. | 2013-03-07 |
| 20130056711 | ORGANIC LIGHT EMITTING DIODES AND METHODS OF MANUFACTURING THE SAME - The inventive concept provides organic light emitting diodes and methods of manufacturing an organic light emitting diode. The organic light emitting diode includes a substrate, a first electrode layer and a second electrode layer formed on the substrate, an organic light emitting layer disposed between the first electrode layer and the second electrode layer and generating light, and a scattering layer between the first electrode layer and the substrate or between the first electrode layer and the organic light emitting layer. The scattering layer scatters the light. | 2013-03-07 |
| 20130056712 | Static-Electrical-Field-Enhanced Semiconductor-Based Devices and Methods of Enhancing Semiconductor-Based Device Performance - Devices that include one or more functional semiconductor elements that are immersed in static electric fields (E-fields). In one embodiment, one or more electrets are placed proximate the one or more organic, inorganic, or hybrid semiconductor elements so that the static charge(s) of the electret(s) participate in creating the static E-field(s) that influences the semiconductor element(s). An externally applied electric field can be used, for example, to enhance charge-carrier mobility in the semiconductor element and/or to vary the width of the depletion region in the semiconductor material. | 2013-03-07 |
| 20130056713 | ORGANIC LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - The inventive concept provides organic light emitting diodes and methods of fabricating the same. The method may include forming an insulating layer on a substrate, coating a metal ink on the insulating layer, thermally treating the substrate to permeate the metal ink into the insulating layer, thereby forming an assistant electrode layer the insulating layer and the metal ink embedded in the insulating layer, and sequentially forming a first electrode, an organic light emitting layer, a second electrode on the assistant electrode layer. | 2013-03-07 |
| 20130056714 | ORGANIC EL DISPLAY, METHOD OF PRODUCING ORGANIC EL DISPLAY, AND ELECTRONIC UNIT - An organic EL display includes: a plurality of first electrodes provided in a display region on a drive substrate, the plurality of first electrodes each including a laminated film having two or more layers; an organic layer provided on the plurality of first electrodes and including a light emitting layer; an electrode pad provided in a peripheral region around the display region; and a second electrode provided on the organic layer as well as the electrode pad, wherein the laminated film includes a first conductive film functioning as a reflective film, and a second conductive film provided below the first conductive film, and having a reflectance lower than that of the first conductive film, and the electrode pad corresponds to a part of the laminated film, and includes a conductive film made of a material same as that of the second conductive film. | 2013-03-07 |
| 20130056715 | PHOTOELECTRIC CONVERSION DEVICE - To provide a photoelectric conversion device which has little light loss caused by light absorption in a window layer, the photoelectric conversion device includes a first electrode, a first semiconductor layer formed over the first electrode, a second semiconductor layer formed over the first semiconductor layer, a third semiconductor layer formed over the second semiconductor layer, and a second electrode formed over the third semiconductor layer; and the first semiconductor layer is a light-transmitting semiconductor layer containing an organic compound and an inorganic compound, and the second semiconductor layer and the third semiconductor layer are each a semiconductor layer containing an organic compound. | 2013-03-07 |
| 20130056716 | TRANSITION METAL CARBENE COMPLEXES AND THE ELECTROLUMINESCENT APPLICATION THEREOF - This invention provides a transition metal carbene complexes and the electroluminescent application thereof. Through employing different N̂N heteroleptic ligand, the transition metal carbene complex can display wide-range color tuning ability from deep blue to red. The mentioned transition metal carbene complex can be applied in luminescent device, and the luminescent device can display wide-range color tuning ability with high luminescent efficiency while employing different N̂N heteroleptic ligand in the transition metal carbene complex. | 2013-03-07 |
| 20130056717 | ORGANIC LIGHT-EMITTING DEVICE AND LIGHT SOURCE APPARATUS USING SAME - An organic light-emitting device including a first substrate, a second substrate, a light drawing-out layer disposed between the first substrate and the second substrate, a transparent electrode disposed between the light drawing-out layer and the first substrate, a reflection electrode disposed between the transparent electrode and the first substrate, and a first light-emitting unit disposed between the transparent electrode and the reflection electrode. The first light-emitting unit includes a first light-emitting layer that emits a first light-emitting color. In the organic light-emitting device, relations of the equation L | 2013-03-07 |
| 20130056718 | Electroluminescent Organic Semiconductor Element and a Method for Repair of an Electroluminescent Organic Semiconductor Element - An electroluminescent organic semiconductor element includes a substrate and a first electrode arranged on the substrate. The semiconductor element additionally contains a second electrode and at least one organic layer, which is arranged between the first electrode and the second electrode. The organic layer is a layer that generates light by recombination of charge carriers. At least one of the first and the second electrode contains a highly conductive organic sublayer. | 2013-03-07 |
| 20130056719 | ORGANIC EL DISPLAY PANEL AND ORGANIC EL DISPLAY APPARATUS - Provided is organic EL display panel and an organic EL display apparatus that can be driven at a low voltage and that exhibit excellent light-emitting efficiency. Included are a substrate, a first electrode, an auxiliary wiring, a hole injection layer, a functional layer, and a second electrode. The hole injection layer and the second electrode are formed to be continuous above the first electrode and above the auxiliary wiring. The second electrode and the auxiliary wiring are electrically connected by the hole injection layer in an organic EL display panel. The hole injection layer is a metal oxide film, and metal atoms constituting the metal oxide include both metal atoms at a maximum valence thereof and metal atoms at a valence less than the maximum valence. The metal oxide film includes a metal oxide crystal with a particle diameter on the order of nanometers. | 2013-03-07 |
| 20130056720 | COMPOUND FOR ORGANIC OPTOELECTRONIC DEVICE, ORGANIC LIGHT EMITTING DIODE INCLUDING THE SAME AND DISPLAY INCLUDING THE ORGANIC LIGHT EMITTING DIODE - A compound for an organic optoelectronic device and an organic photoelectric device including the same are provided. A compound for an organic optoelectronic device represented by Chemical Formula 1 is provided to fabricate an organic photoelectric device having excellent electrochemical and thermal stability and life-span characteristics, and high luminous efficiency at a low driving voltage. | 2013-03-07 |
| 20130056721 | ORGANIC EL ILLUMINATION DEVICE - In the organic EL illumination device including m (m is an integer greater than 1) series circuits each of which includes n (n is an integer greater than 1) organic EL panels connected in series, each of the organic EL panels is provided with one organic EL element, a positive electrode and a negative electrode, the m series circuits are connected in parallel between the positive electrode and the negative electrode, and among the organic EL panels in the m series circuits, the organic EL panels having the same place in series connections in the direction from the positive electrode to the negative electrode are connected with each other in parallel. | 2013-03-07 |
| 20130056722 | NOVEL ORGANIC COMPOUND - A novel organic compound is suitable for emitting green light. An organic light-emitting device includes the novel organic compound. | 2013-03-07 |
| 20130056723 | Protective Barriers for Electronic Devices - The present disclosure provides for electronic devices that use low cost, conductive materials as transparent conductors. The devices contain corrosion preventative conductive polymer layers and conductive innerlayer barriers that separate corrosive electrolyte from the conductors which are prone to corrosion and dissolution, while providing an uninterrupted electrical circuit. The present disclosure also allows for the use of layers which have been applied from aqueous media thereby reducing both the cost and the environmental impact of the electronic devices. Methods of manufacture are also provided. | 2013-03-07 |
| 20130056724 | Flat Panel Display Device with Oxide Thin Film Transistors and Method for Fabricating the Same - A flat panel display device with oxide thin film transistors and a fabricating method thereof are disclosed. The flat panel display device includes: a substrate; gate lines and data lines formed to cross each other and define a plurality of pixel regions on the substrate; the thin film transistors each including an oxide channel layer which is formed at an intersection of the gate and data lines; a pixel electrode and a common electrode formed in the pixel region with having a passivation layer therebetween; and step coverage compensation patterns formed at a step portion formed by the gate line and a gate electrode of the thin film transistor. | 2013-03-07 |
| 20130056725 | Radiation-Emitting Component with a Semiconductor Chip and a Conversion Element and Method for the Production Thereof - A radiation-emitting component includes a semiconductor chip and a conversion element. The semiconductor chip includes an active layer suitable for generating electromagnetic radiation and a radiation exit face. The conversion element includes a matrix material and a luminescent material. The conversion element is arranged downstream of the radiation exit face of the semiconductor chip. The matrix material comprises at least 40 wt. % tellurium oxide and is free of boron trioxide and/or germanium oxide. A method for producing such a radiation-emitting component is furthermore stated. | 2013-03-07 |
| 20130056726 | FLAT PANEL DISPLAY DEVICE WITH OXIDE THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A flat panel display device with an oxide thin film transistor and a fabricating method thereof are disclosed. The fabricating method of the flat panel display device includes: preparing a substrate defined into a pixel region and a pad contact region; forming a gate electrode and a link line; forming a pixel electrode within the pixel region; forming an oxide layer on the substrate provided with the pixel electrode; forming a passivation layer on the substrate and performing a formation process of contact holes to expose the link line; and forming a second transparent conductive material film on the substrate. | 2013-03-07 |
| 20130056727 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device which is miniaturized and has sufficient electrical characteristics to function as a transistor is provided. In a semiconductor device including a transistor in which a semiconductor layer, a gate insulating layer, and a gate electrode layer are stacked in that order, an oxide semiconductor film which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and in which the percentage of the indium is twice or more as large as each of the percentage of the gallium and the percentage of the zinc when the composition of the four elements is expressed in atomic percentage is used as the semiconductor layer. In the semiconductor device, the oxide semiconductor film is a film to which oxygen is introduced in the manufacturing process and contains a large amount of oxygen, and an insulating layer including an aluminum oxide film is provided to cover the transistor. | 2013-03-07 |
| 20130056728 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - Provided is a thin film transistor capable of improving reliability in the thin film transistor including an oxide semiconductor layer. A thin film transistor including: a gate electrode; a gate insulating film formed on the gate electrode; an oxide semiconductor layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective film formed at least in a region corresponding to the channel region on the oxide semiconductor layer; and a source/drain electrode. A top face and a side face of the oxide semiconductor layer are covered with the source/drain electrode and the channel protective layer on the gate insulating film. | 2013-03-07 |
| 20130056729 | THIN FILM TRANSISTOR SUBSTRATE, LCD DEVICE INCLUDING THE SAME, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE - A source electrode and a drain electrode are formed by a stack of a titanium layer, a molybdenum nitride layer, an aluminum layer, and a molybdenum nitride layer, the titanium layer is formed by dry etching, and an oxide semiconductor layer is formed by performing annealing in an oxygen-containing atmosphere after formation of the source electrode and the drain electrode. | 2013-03-07 |
| 20130056730 | SEMICONDUCTOR DEVICE - A technique capable of promoting miniaturization of an RF power module used in a mobile phone etc. is provided. A directional coupler is formed inside a semiconductor chip in which an amplification part of the RF power module is formed. A sub-line of the directional coupler is formed in the same layer as a drain wire coupled to the drain region of an LDMOSFET, which will serve as the amplification part of the semiconductor chip. Due to this, the predetermined drain wire is used as a main line and the directional coupler is configured by a sub-line arranged in parallel to the main line via an insulating film, together with the main line. | 2013-03-07 |
| 20130056731 | Semiconductor Device and Method for Manufacturing the Semiconductor Device - A semiconductor device includes a semiconductor diode. The semiconductor diode includes a drift region and a first semiconductor region of a first conductivity type formed in or on the drift region. The first semiconductor region is electrically coupled to a first terminal via a first surface of a semiconductor body. The semiconductor diode includes a channel region of a second conductivity type electrically coupled to the first terminal, wherein a bottom of the channel region adjoins the first semiconductor region. A first side of the channel region adjoins the first semiconductor region. | 2013-03-07 |
| 20130056732 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes: a substrate; an infrared sensing transistor on the substrate; a readout transistor connected to the infrared sensing transistor; a power source line; and a light blocking member on the infrared sensing transistor, where the infrared sensing transistor includes a light blocking film on the substrate, a first gate electrode contacting and overlapping the light blocking film and connected to a power source line, a first semiconductor layer on the first gate electrode overlapping the light blocking film, and first source and drain electrodes on the first semiconductor layer, where the readout transistor includes a second gate electrode on the substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and second source and drain electrodes the second semiconductor layer, and where the power source line and the first gate electrode are at a same layer. | 2013-03-07 |
| 20130056733 | SENSOR AND METHOD OF PRODUCING A SENSOR - A sensor includes a substrate, a membrane, first and second spacers arranged on the substrate, a first support structure which is supported, laterally next to the membrane, by the first spacer and contacts a first electrode of a first main side of the membrane which faces the substrate, and a second support structure which is supported, laterally next to the membrane, by the second spacer and contacts a second electrode on a second main side of the membrane which is opposite the first main side, so that the membrane is suspended via the first and second spacers and is electrically connected to contact areas of the substrate. | 2013-03-07 |
| 20130056734 | TFT SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor (TFT) substrate and a manufacturing method thereof are disclosed. The manufacturing method comprises: after a first metallic layer is formed on the TFT substrate, annealing the TFT substrate so that lattices of the first metallic layer are re-arranged to prevent occurrences of grain boundary defects in the first metallic layer. According to the present disclosure, after the first metallic layer is formed on the TFT substrate, the TFT substrate is annealed in sequence to re-arrange lattices of the first metallic layer. This effectively prevents occurrences of grain boundary defects and, consequently, metal protrusions in the first metallic layer. | 2013-03-07 |
| 20130056735 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus includes a thin film transistor on a display region of a substrate, the thin film transistor faces an encapsulation member, an organic light-emitting device on the display region that includes an intermediate layer having an organic emission layer, a sealing member that is between the substrate and the encapsulation member and that surrounds the display region, an internal circuit unit between the display region and the sealing member, a passivation layer that extends to cover the internal circuit unit, a pixel defining layer on the passivation layer, and a getter between the substrate and the encapsulation member, and the getter at least partially overlaps the internal circuit unit. | 2013-03-07 |
| 20130056736 | GATE DRIVING CIRCUIT, DISPLAY SUBSTRATE HAVING THE SAME AND METHOD OF MANUFACTURING THE DISPLAY SUBSTRATE - A gate driving circuit includes a plurality of stages outputting gate signals to a plurality of gate lines. Each of the stages includes a circuit transistor, a capacitor part, a first connecting electrode and a second connecting electrode. The circuit transistor outputs the gate signal to an output electrode in response to a control signal inputted to a control electrode. The capacitor part is disposed adjacent to the circuit transistor, and includes a first electrode, a second electrode disposed over the first electrode, a third electrode disposed over the second electrode and a fourth electrode disposed over the third electrode. The first connecting electrode electrically connects the control electrode to the first and third electrodes. The second connecting electrode electrically connects the output electrode to the second and fourth electrodes. | 2013-03-07 |
| 20130056737 | WIRING FILM AND ACTIVE MATRIX SUBSTRATE USING THE SAME, AND METHOD FOR MANUFACTURING WIRING FILM - An Al wiring film having a tapered shape is obtained easily and in a stable manner. An Al wiring film has a double-layer structure including a first Al alloy layer made of Al or an Al alloy, and a second Al alloy layer laid on the first Al alloy layer and having a composition different from a composition of the first Al alloy layer by containing at least one element of Ni, Pd, and Pt. The second Al alloy layer is etched by an alkaline chemical solution used in a developing process of a photoresist, and an end portion of the second Al alloy layer recedes from an end portion of the photoresist. Thereafter, by performing wet etching using the photoresist as a mask, a cross section of the Al wiring film becomes a tapered shape. | 2013-03-07 |
| 20130056738 | Method for Manufacturing Thin Film Transistor, Thin Film Transistor and Image Display Apparatus - A method for manufacturing a thin film transistor includes a first process of forming a gate electrode on a substrate; a second process of forming a gate insulation film so as to cover the gate electrode; a third process of forming a source electrode and a drain electrode on the gate insulation film; a fourth process of forming a semiconductor layer connected to the source electrode and the drain electrode; a fifth process of forming a protection film so as to overlap a portion of the source electrode and the drain electrode immediately above the semiconductor layer; and a sixth process of patterning the semiconductor layer using the protection film as a mask. | 2013-03-07 |
| 20130056739 | TFT ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A TFT array substrate and a manufacturing method thereof, where the TFT array substrate includes a substrate; a gate line and a gate electrode integrated therewith, which are covered by a gate insulating layer, a semiconductor layer, and a ohmic contact layer sequentially. An insulating layer is formed on the resulting substrate and on both sides of the gate line and the gate electrode, the gate insulating layer, the semiconductor layer, and the ohmic contact layer. A trench is then formed in the ohmic contact layer to divide the ohmic contact layer over the semiconductor layer. A data line and first and second source/drain electrodes are then formed on the insulating layer and the ohmic contact layer. | 2013-03-07 |
| 20130056740 | THIN FILM TRANSISTOR ARRAY PANEL INCLUDING LAYERED LINE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a thin film transistor array panel comprising an insulating substrate; a gate line formed on the insulating substrate; a gate insulating layer formed on the gate line; a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain electrode being adjacent to the source electrode with a gap therebetween; and a pixel electrode coupled to the drain electrode, wherein at least one of the gate line, the data line, and the drain electrode comprises a first conductive layer comprising a conductive oxide and a second conductive layer comprising copper (Cu). | 2013-03-07 |
| 20130056741 | DISPLAY PANEL AND THIN FILM TRANSISTOR SUBSTRATE - A display panel ( | 2013-03-07 |
| 20130056742 | MICROCRYSTALLINE SILICON FILM, MANUFACTURING METHOD THEREOF, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF - A manufacturing method of a microcrystalline silicon film includes the steps of forming a first microcrystalline silicon film over an insulating film by a plasma CVD method under a first condition; and forming a second microcrystalline silicon film over the first microcrystalline silicon film under a second condition. As a source gas supplied to a treatment chamber, a deposition gas containing silicon and a gas containing hydrogen are used. In the first condition, a flow rate of hydrogen is set at a flow rate 50 to 1000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 67 to 1333 Pa inclusive. In the second condition, a flow rate of hydrogen is set at a flow rate 100 to 2000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 1333 to 13332 Pa inclusive. | 2013-03-07 |
| 20130056743 | METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NITRIDE BASED ELECTRONICS - A diode includes a substrate characterized by a first dislocation density and a first conductivity type, a first contact coupled to the substrate, and a masking layer having a predetermined thickness and coupled to the semiconductor substrate. The masking layer comprises a plurality of continuous sections and a plurality of openings exposing the substrate and disposed between the continuous sections. The diode also includes an epitaxial layer greater than 5 μm thick coupled to the substrate and the masking layer. The epitaxial layer comprises a first set of regions overlying the plurality of openings and characterized by a second dislocation density and a second set of regions overlying the set of continuous sections and characterized by a third dislocation density less than the first dislocation density and the second dislocation density. The diode further includes a second contact coupled to the epitaxial layer. | 2013-03-07 |
| 20130056744 | Semiconductor Devices with Guard Rings - Semiconductor devices with guard rings are described. The semiconductor devices may be, e.g., transistors and diodes designed for high-voltage applications. A guard ring is a floating electrode formed of electrically conducting material above a semiconductor material layer. A portion of an insulating layer is between at least a portion of the guard ring and the semiconductor material layer. A guard ring may be located, for example, on a transistor between a gate and a drain electrode. A semiconductor device may have one or more guard rings. | 2013-03-07 |
| 20130056745 | Buffer Layer for GaN-on-Si LED - A buffer layer of zinc telluride (ZnTe) or titanium dioxide (TiO | 2013-03-07 |
| 20130056746 | SEMICONDUCTOR DEVICE - A semiconductor device includes: an electron-transit layer made of a semiconductor, the electron-transit layer having a first band gap; an electron-supply layer disposed on the electron-transit layer, the electron-supply layer being made of a semiconductor having a second band gap that is wider than the first band gap; a barrier-forming layer disposed on the electron-supply layer, the barrier-forming layer being made of a semiconductor having a third band gap that is narrower than the second band gap; an upper-channel layer disposed on the barrier-forming layer, the upper-channel layer being made of a semiconductor doped with an impurity; a side-surface of the barrier-forming layer and the upper-channel layer formed by partly removing the barrier-forming layer and the upper-channel layer; an insulating-film disposed on the side-surface; a gate-electrode disposed on the insulating-film; a source-electrode connected to the upper-channel layer; and a drain-electrode connected to the electron-supply layer or the electron-transit layer. | 2013-03-07 |
| 20130056747 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A nitride semiconductor light emitting device and a manufacturing method thereof are provided. The nitride semiconductor light emitting device includes: forming a first conductivity-type nitride semiconductor layer on a substrate; forming an active layer on the first conductivity-type nitride semiconductor layer; and forming a second conductivity-type nitride semiconductor layer on the active layer. High output can be obtained by increasing doping efficiency in growing the conductivity type nitride semiconductor layer. | 2013-03-07 |
| 20130056748 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern. | 2013-03-07 |
| 20130056749 | BROAD-AREA LIGHTING SYSTEMS - In accordance with certain embodiments, illumination systems are formed by aligning light-emitting elements with optical elements and/or disposing light-conversion materials on the light-emitting elements, as well as by providing electrical connectivity to the light-emitting elements | 2013-03-07 |
| 20130056750 | NITRIDE BASED SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME AND BONDING SUBSTRATE - A nitride based semiconductor package includes a nitride based semiconductor device, a package substrate, and a bonding substrate. The semiconductor device includes, on a surface thereof, a first electrode pattern having a source electrode, a drain electrode and a gate electrode. The bonding substrate includes, on a first surface thereof, a second electrode pattern corresponding to the first electrode pattern, and at least one first groove pattern. The first groove pattern exposes the second electrode pattern. The first electrode pattern is received in the at least one first groove pattern. The second electrode pattern is bonded to the first electrode pattern received in the at least one first groove pattern. A second surface of the bonding substrate is bonded to the package substrate. | 2013-03-07 |
| 20130056751 | Method for Integrating MEMS Microswitches on Gan Substrates Comprising Electronic Power Components - Methods of fabrication of electronic modules comprise, on the one hand, power electronic components fabricated on a substrate made of gallium nitride (GaN) and, on the other hand, micro-switches using electrostatic activation of the MEMS (Micro Electro Mechanical System) type. The electronic components and the micro-switches are fabricated on a single gallium nitride substrate and the fabrication method comprises at least the following steps: fabrication of the power components on the gallium nitride substrate; deposition of a first common passivation layer on said components and on the substrate; fabrication of the micro-switches on said substrate. | 2013-03-07 |
| 20130056752 | SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SUBSTRATE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - An edge region has a width of 5 mm. A valid region is surrounded by the edge region, and has an area greater than or equal to 100 cm | 2013-03-07 |
| 20130056753 | Semiconductor Device with Low-Conducting Field-controlling Element - A semiconductor device including a low conducting field-controlling element is provided. The device can include a semiconductor including an active region (e.g., a channel), and a set of contacts to the active region. The field-controlling element can be coupled to one or more of the contacts in the set of contacts. The field-controlling element can be formed of a low conducting layer of material and have a lateral resistance that is both larger than an inverse of a minimal operating frequency of the device and smaller than an inverse of a maximum control frequency of the device. | 2013-03-07 |
| 20130056754 | ELECTRONIC CIRCUIT DEVICE - A normally-off type silicon carbide junction FET has a problem that the gate thereof is not easy to use due to inferiority in the characteristics of it. This problem occurs because in order to achieve normally-off, the gate voltage should be off at 0V and at the same time, the ON-state gate voltage should be suppressed to about 2.5V to prevent the passage of an electric current through a pn junction between gate and source. Accordingly, a range from the threshold voltage to the ON-state gate voltage is only from about 1 V to 2V and it is difficult to control the gate voltage. Provided in the present invention is an electronic circuit device obtained by coupling, to a gate of a normally-off type silicon carbide junction FET, an element having a capacitance equal to or a little smaller than the gate capacitance of the junction FET. | 2013-03-07 |
| 20130056755 | POWER SEMICONDUCTOR MODULE - A transistor chip formed from a wide band gap semiconductor, on which transistor elements for an upper arm are formed is mounted on a front surface of an insulating substrate. A transistor chip formed from a wide band gap semiconductor, on which transistor elements for a lower arm are formed is mounted on a rear surface of the insulating substrate. | 2013-03-07 |
| 20130056756 | LIGHT-TRANSMISSIVE MEMBER, OPTICAL DEVICE, AND MANUFACTURING METHODS THEREOF - A light-transmissive member has a first principal face, a second principal face, and side faces. The first principal face has a first portion including a center of the first principal face and a second portion between the first portion and the side face sides. The member includes a plurality of altered portions formed between the first principal face and the second principal face so that the plurality of altered portions do not appear on the first principal face, the second principal face, and the side faces. Orthogonal projections of the plurality of altered portions onto the first principal face are included in the second portion. | 2013-03-07 |
| 20130056757 | LED ARRAY CAPABLE OF REDUCING UNEVEN BRIGHTNESS DISTRIBUTION - A light emitting element in use for an LED array comprises an electrode layer, a semiconductor light emitting layer consisting of a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first wiring layer formed along and in parallel to one side of the semiconductor light emitting layer, and a plurality of second wiring layers extending from the first wiring layer to the semiconductor light emitting layer and electrically connected to the n-type semiconductor layer on a surface of the semiconductor light emitting layer, wherein a plane shape of the semiconductor light emitting layer comprises two short sides including a portion inclined from a line perpendicular to a upper and a lower sides, and a vertical line from a vertex where the upper side and the short side meet crosses the lower side of the adjacent light emitting element. | 2013-03-07 |
| 20130056758 | METHOD AND APPARATUS FOR THIN FILM MODULE WITH DOTTED INTERCONNECTS AND VIAS - A method to fabricate monolithically-integrated optoelectronic module apparatuses ( | 2013-03-07 |
| 20130056759 | Packaging Device for Matrix-Arrayed Semiconductor Light-Emitting Elements of High Power and High Directivity - A packaging device for matrix-arrayed semiconductor light-emitting elements of high power and high directivity comprises a metal base, an array chip and a plurality of metal wires. The metal base is of highly heat conductive copper or aluminum, and a first electrode area and at least one second electrode area which are electrically isolated are disposed on the metal base. The array chip is disposed on the first electrode area, on which multiple matrix-arranged semiconductor light-emitting elements and at least one wire bond pad adjacent to the light-emitting elements are disposed. The light-emitting element is a VCSEL element, an HCSEL element or an RCLED element. The metal wires are connected between the wire bond pad and the second electrode area to transmit power signals. Between the bottom surface and the first electrode area is disposed a conductive adhesive to bond and facilitate electrical connection between the two. | 2013-03-07 |
| 20130056760 | PIXEL ARRAY SUBSTRATE - A pixel array substrate includes a pixel region and a circuit region adjacent to the pixel region. A plurality of display pixel units are disposed in the pixel region and a plurality of dummy pixel units are disposed in the circuit region. Each of the dummy pixel units includes a data line, a scan line, a plurality of switching elements and a plurality of pixel electrodes. The switching elements are electrically connected to the scan line and data line. The pixel electrodes are electrically connected to the switching elements. Particularly, electrostatic currents in the pixel region can be dissipated by the dummy pixel units in the circuit region. The dummy pixel units preserve the continuity of electricity in the pixel array substrate and function as an inner short ring. Therefore, the area of the circuit region on the pixel array substrate is larger. | 2013-03-07 |
| 20130056761 | PIXEL ARRAY SUBSTRATE - A pixel array substrate includes a pixel region and a circuit region adjacent to the pixel region. A plurality of display pixel units are disposed in the pixel region and a plurality of dummy pixel units are disposed in the circuit region. Each of the dummy pixel units includes a data line, a scan line, a plurality of switching elements and a plurality of pixel electrodes. The switching elements are electrically connected to the scan line and data line. The pixel electrodes are electrically connected to the switching elements. Particularly, electrostatic currents in the pixel region can be dissipated by the dummy pixel units in the circuit region. The dummy pixel units preserve the continuity of electricity in the pixel array substrate and function as an inner short ring. Therefore, the area of the circuit region on the pixel array substrate is larger. | 2013-03-07 |
| 20130056762 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A display device having a base substrate provided with light-emitting devices and terminal electrodes connected thereto; a sealing substrate disposed to face the base substrate; a first resin material between the base substrate and the sealing substrate so as to surround a first region in which the light-emitting devices are provided; and a second resin material between the base substrate and the sealing substrate and is filled in the first region surrounded by the first resin material so as to seal the light-emitting devices. | 2013-03-07 |
| 20130056763 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device that can realize a function of a thyristor without complication of the process. A semiconductor device including a memory circuit that stores a predetermined potential by reset operation and initialization operation is provided with a circuit that rewrite data in the memory circuit in accordance with supply of a trigger signal. The semiconductor device has a structure in which a current flowing through the semiconductor device is supplied to a load by rewriting data in the memory circuit, and thus can function as a thyristor. | 2013-03-07 |
| 20130056764 | Display Device and Manufacturing Method Thereof - A display device in which light leakage in a monitor element portion is prevented without increasing the number of steps and cost is provided. The display device includes a monitor element for suppressing influence on a light-emitting element due to temperature change and change over time and a TFT for driving the monitor element, in which the TFT for driving the monitor element is provided so as not to overlap the monitor element. Furthermore, the display device includes a first light shielding film and a second light shielding film, in which the first light shielding film is provided so as to overlap a first electrode of the monitor element and the second light shielding film is electrically connect to the first light shielding film through a contact hole formed in an interlayer insulating film. The contact hole is formed so as to surround the outer edge of the first electrode of the monitor element. | 2013-03-07 |
| 20130056765 | LIGHT EMITTING DIODE LIGHT SOURCE INCLUDING ALL NITRIDE LIGHT EMITTING DIODES - A light source including at least two phosphor converted (pc) light emitting diodes (LEDs), each of the pc LEDs including an associated blue-emitting LED as an excitation source for a phosphor containing element. | 2013-03-07 |
| 20130056766 | SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SAME - Disclosed is a semiconductor device | 2013-03-07 |
| 20130056767 | LED UNIT - An LED unit includes: a plurality of LED modules each having an LED chip for generating ultraviolet ray provided in a package which has an opening formed on one surface and a lens formed to cover the opening of the package; a substrate-shaped base block where the LED modules are mounted in a first direction; and a heat radiation member where a plurality of the base blocks is provided in a second direction perpendicular to the first direction. The heat radiation member has a plurality of inclined surfaces where each of the base blocks is disposed. Further, one inclined surface and the other inclined surface of the heat radiation member are inclined to face each other in the second direction. | 2013-03-07 |
| 20130056768 | DISPLAY DEVICE AND ELECTRONIC APPARATUS HAVING A DISPLAY DEVICE - A display device includes a plurality of main pixels. Each main pixel includes a plurality of sub-pixels. At least two of the sub-pixels emit light of different colors. The at least two sub-pixels are different in size. | 2013-03-07 |
| 20130056769 | LIGHT EMITTING DIODE MODULE AND DISPLAY DEVICE USING THE SAME LIGHT EMITTING DIODE MODULE - A light emitting diode (LED) module and a display device adopting the same LED module are provided. The LED module includes a circuit substrate, a LED chip, a connector and a conductive line. The LED chip has at least three pins, and the LED chip is fixed on the circuit substrate through the pins, wherein one of the pins is defined as a no connection (NC) pin. The connector includes a non-conductive housing, at least one fixing pin and a conductor. The fixing pin is connected to the non-conductive housing, and the non-conductive housing is fixed on the circuit substrate through the said at least one fixing pin. A part of the non-conductive housing is covered with the conductor. The conductive line is disposed on the circuit substrate and is electrically connected between the conductor and the NC pin. | 2013-03-07 |
| 20130056770 | Patterned Substrate Design for Layer Growth - A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns. | 2013-03-07 |
| 20130056771 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive layer at least one part between the second conductive semiconductor layer and the second electrode layer. | 2013-03-07 |
| 20130056772 | LIGHT-EMITTING DEVICE WITH NARROW DOMINANT WAVELENGTH DISTRIBUTION AND METHOD OF MAKING THE SAME - This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation. | 2013-03-07 |
| 20130056773 | LED PACKAGE AND METHOD OF THE SAME - LED package includes a substrate with pre-formed P-type through-hole and N-type through-hole through the substrate; a reflective layer formed on an upper surface of the substrate; a LED die having P-type pad and N-type pad aligned with the P-type through-hole and the N-type through-hole; wherein the LED die is formed on the upper surface of the substrate; a refilling material within the P-type through-hole and the N-type through-hole thereby forming electrical connection from the P-type pad and the N-type pad; and a lens formed over the upper surface of the substrate. | 2013-03-07 |
| 20130056774 | LENS, PACKAGE AND PACKAGING METHOD FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE - This invention provides lenses having a pendant shape profile and their applications and forming methods. In an embodiment, the lenses are used to encapsulate one or more light-emitting diode chips so as to increase the light extraction efficiency. | 2013-03-07 |
| 20130056775 | LIGHT SOURCE DEVICE AND LIGHTING DEVICE - A light source can include: a light source that emits light of a predetermined wavelength within a wavelength region covering the wavelength of ultraviolet light and that of visible light; and a wavelength conversion layer containing a fluorescent material of at least one type that is excited by excitation light from the fixed light source to emit fluorescent light of a wavelength longer than that of light emitted from the fixed light source. The fixed light source and the wavelength conversion layer can be spaced from each other. The light source device can employ a reflection system of extracting at least fluorescent light from an incident surface of the wavelength conversion layer through which excitation light from the fixed light source enters the wavelength conversion layer. The wavelength conversion layer can have a surface structure with depressions or projections. | 2013-03-07 |
| 20130056776 | PLATE - A plate including a substrate, a metal reflection layer and an oxidation protection layer is provided. The substrate has a first surface and a second surface opposite to the first surface. The metal reflection layer is disposed on the first surface of the substrate. The oxidation protection layer covers the metal reflection layer. The metal reflection layer is disposed between the oxidation protection layer and the first surface of the substrate. At least one light emitting diode chip is adapted to eutectic bonding on the plate. | 2013-03-07 |
| 20130056777 | III-NITRIDE LIGHT-EMITTING DEVICES WITH REFLECTIVE ENGINEERED GROWTH TEMPLATES AND MANUFACTURING METHOD - A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the second mirror. | 2013-03-07 |
| 20130056778 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a light emitting device includes a substrate, a first electrode, a second electrode, an insulating section, a light emitting section, and a third electrode. The substrate with a groove is provided at a surface. The first electrode is provided inside the groove. The second electrode is provided on the substrate and the first electrode. The insulating section is provided on the second electrode. The light emitting section is provided on the second electrode and the insulating section. The third electrode is provided on the light emitting section. The first electrode has a side surface inclined away from a portion of the light emitting section provided on the second electrode toward bottom portion side of the groove. | 2013-03-07 |
| 20130056779 | LIGHT-EMITTING DIODE DEVICES - An LED device includes a die carrier having a die mounting surface and electrical connection regions. An LED die is mounted on the die mounting surface of the die carrier. The LED die includes a substrate, a first type semiconductor layer disposed atop the substrate, a second type semiconductor layer disposed atop the first type semiconductor layer, an another first type semiconductor layer disposed atop the second type semiconductor layer, at least three through holes each extending from the substrate to a corresponding semiconductor layer, an insulative layer formed on inner walls of the through holes, and electrically conductive linkers mounted within the through holes. Each electrically conductive linker has an end electrically connected to a corresponding semiconductor layer and an opposite end protruding outwardly from the corresponding through hole for electrical connection to a corresponding electrical connection region. A light transmissible protective layer covers the LED die. | 2013-03-07 |
| 20130056780 | LIGHT EMITTING DEVICE - A light emitting device, comprising: a package which is formed of a resin and has a recess which is provided with a bottom face and two pairs of opposite inner walls surrounding the bottom face, the package having two pairs of opposite side walls made of the inner walls and corresponding outer walls; a lead frame exposed at the bottom face; a light emitting element which is provided on the lead frame; and a sealing resin provided in the recess for sealing the light emitting element, wherein the lead frame has a bottom portion and a reflector portion exposed along one of the pair of opposite inner walls, and a first angle between the reflector portion and the bottom face is greater than a second angle between another one of the pair of opposite inner walls which is opposite to the reflector portion and the bottom face, is provided. | 2013-03-07 |
| 20130056781 | LIGHT EMITTING DEVICE - The light emitting device has a light emitting element | 2013-03-07 |
| 20130056782 | Optoelectronic Semiconductor Part Containing Alkali-Free and Halogen-Free Metal Phosphate - An optoelectronic semiconductor part comprising a light source, a housing and electrical connections, wherein the optoelectronic semiconductor part comprises a component which contains metal phosphate, and wherein the metal phosphate is substantially alkali-free and halogen-free. | 2013-03-07 |
