| 10th week of 2014 patent applcation highlights part 19 |
| Patent application number | Title | Published |
|---|
| 20140061532 | RADICAL COMPOSITION AND BATTERY USING SAME - The present invention provides a radical composition capable of suppressing elution of electrode components in an electrolyte solution when used in an electrode for a secondary battery, and a battery using the radical composition. The present invention relates to a radical composition including a pyrroline nitroxide polymer and polyethylene glycols. | 2014-03-06 |
| 20140061533 | INDANE BISPHENOLS, POLYMERS DERIVED THEREFROM, AND METHODS OF USE THEREOF - Disclosed herein are indane bisphenol monomer units, and polymers derived from such monomer units. Also disclosed herein are blends including such polymers, articles made from such polymers and blends, methods of using such monomers, polymers, and blends, and processes for preparing such monomers, polymers, and blends. | 2014-03-06 |
| 20140061534 | LIQUID-CRYSTALLINE MEDIUM - The invention relates to a liquid-crystalline medium comprising at least one compound of the formula I, | 2014-03-06 |
| 20140061535 | NEMATIC LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY ELEMENT USING SAME - A liquid crystal composition in which deterioration of viscosity that is associated with an increase in Δn and an increase in Δ∈ is suppressed, and a liquid crystal display element having a markedly improved response speed by using the relevant liquid crystal composition. The liquid crystal composition has a large value of Δn and negative Δ∈, and have large absolute values thereof. Also, the liquid crystal composition has low η, has excellent liquid crystal properties, and exhibits a liquid crystal phase that is stable in a wide temperature range. Furthermore, since the liquid crystal composition is chemically stable to heat, light, water and the like, the liquid crystal composition is capable of low voltage driving, and is practically useful and highly reliable. | 2014-03-06 |
| 20140061536 | COMPOUNDS OF LIQUID CRYSTALLINE MEDIUM AND USE THEREOF FOR HIGH-FREQUENCY COMPONENTS - The present invention relates to compounds of the formula I | 2014-03-06 |
| 20140061537 | MULTI-DOPED LUTETIUM BASED OXYORTHOSILICATE SCINTILLATORS HAVING IMPROVED PHOTONIC PROPERTIES - The present invention relates to a set of multi-doped cerium-activated scintillation materials of the solid solutions on the basis of the rare earth silicate, comprising lutetium and having compositions represented by the chemical formulas: (Lu | 2014-03-06 |
| 20140061538 | CONJUGATED POLYMERS - The invention relates to novel polymers containing one or more benzo[1,2-b:4,5-b′]dithiophene-4,8-dione repeating units, methods for their preparation and monomers used therein, blends, mixtures and formulations containing them, the use of the polymers, blends, mixtures and formulations as semiconductor in organic electronic (OE) devices, especially in organic photovoltaic (OPV) devices, and to OE and OPV devices comprising these polymers, blends, mixtures or formulations. | 2014-03-06 |
| 20140061539 | GASIFICATION SYSTEM AND METHOD - A system includes a gasifier. The gasifier includes a chamber, a first nozzle, and a second nozzle. The first nozzle is configured to output a first fuel and a first oxidant to create a mixture that combusts in a combustion-reduction zone of the chamber. The second nozzle is configured to output a reduction promoter into the combustion-reduction zone to reduce combustion products in the combustion-reduction zone of the chamber. | 2014-03-06 |
| 20140061540 | METAL-ORGANIC FRAMEWORK ADSORBENTS FOR COMPOSITE GAS SEPARATION - Metal-organic frameworks of the family M | 2014-03-06 |
| 20140061541 | RAZOR BLADE PRESERVATION SYSTEM AND METHOD - A composition for extending the usable life of a razor blade includes a vegetable oil, for example sunflower oil, Aloe Vera gel, and Petrolatum. The composition is used by application of one to several drops of the composition to a razor blade after use followed by storage of the razor blade in the normal manner. | 2014-03-06 |
| 20140061542 | RADIATION SHIELDING STRUCTURE COMPOSITION - Radiation structures formed from a composition including calcium silicate, magnesium or calcium oxides and an acid phosphate are provided. The composition may also include fly ash or kaolin. | 2014-03-06 |
| 20140061543 | METHOD OF MANUFACTURING NON-FIRING TYPE ELECTRODE USING PHOTOSENSITIVE PASTE - A method of manufacturing a non-firing type electrode comprising steps of: (a) applying on a substrate a photosensitive paste comprising, (i) a conductive powder, (ii) an organic polymer comprising acrylic polymer and hydroxypropyl cellulose (HPC) at weight ratio of 5:1 to 2:1, (iii) a photopolymerization initiator, and (iv) a photopolymerizable compound; b) exposing the applied photosensitive paste to light; and (c) developing the exposed photosensitive paste by an aqueous solution, wherein the electrode comprises fine line of width of 5 to 30 μm. | 2014-03-06 |
| 20140061544 | AQUEOUS PIGMENT DISPERSIONS AND INKJET INKS - The present disclosure pertains to an aqueous pigment dispersion containing a pigment as colorant, a polymeric dispersant and a hydroxyl-substituted amino acid. The present disclosure further pertains to an ink containing an aqueous vehicle and the aqueous pigment dispersion, and ink sets with at least one of the inks containing the pigment dispersion. | 2014-03-06 |
| 20140061545 | BIS(SULFONYL)BIARYL DERIVATIVES AS ELECTRON TRANSPORTING AND/OR HOST MATERIALS - The inventions disclosed, described, and/or claimed herein relate to bis(sulfonyl)biaryl compounds that are useful as electron transporting materials useful for making novel organic electronic devices, including the electron transport layers of organic light-emitting diodes (“OLEDs”), or as an electron transporting guest for phosphorescent guests in the emissive layer of OLEDs. | 2014-03-06 |
| 20140061546 | NANOPARTICLES, METHOD OF MANUFACTURING NANOPARTICLES, AND ELECTRONIC DEVICE INCLUDING THE SAME - A method of manufacturing nanoparticles, nanoparticles, and an organic light emitting diode, a solar cell, a printing ink, a bioimaging device, and a sensor including the same are provided. | 2014-03-06 |
| 20140061547 | ELECTRODE PASTE PRODUCTION DEVICE AND ELECTRODE PASTE PRODUCTION METHOD - In production of electrode paste, powder and solvent are separately injected into a hollow exterior component, the powder and the solvent are transferred to a downstream side in a transfer direction by rotation of two rotary shafts supported by the exterior component in a state where the rotary shafts are located parallel to each other at a predetermined interval, a mixture is produced by mixing the powder and the solvent by rotation of the rotary shafts without applying a shearing force, which is higher than or equal to a predetermined shearing force, to the powder, and producing electrode paste by kneading the mixture through application of a shearing force, which is higher than the shearing force that is applied in the mixing step, to the mixture through rotation of the rotary shafts. | 2014-03-06 |
| 20140061548 | COMPOUNDS FOR ELECTRONIC DEVICES - The present invention relates to a compound of the formula (I), to the use of the compound in an electronic device, and to an electronic device comprising a compound of the formula (I). The present invention furthermore relates to a process for the preparation of a compound of the formula (I) and to a formulation comprising one or more compounds of the formula (I). | 2014-03-06 |
| 20140061549 | Manufacturing and Applications of Metal Powders and Alloys - Disclosed is a process to reduce mixtures of at least one metal halide by molten metal reduction of the liquid phase metal halide in an alkali or alkaline earth metal to form a reaction product comprising at least one metal mixture and a halide salt coating, in which the at least one metal halide is in stoichiometric excess to the molten metal reductant and wherein the reductant is consumed in the reaction and does not need to be removed at the end of the reaction. | 2014-03-06 |
| 20140061550 | SOLUTION-PROCESSED TRANSITION METAL OXIDES - Embodiments may pertain to methods for preparing a transition metal oxide. | 2014-03-06 |
| 20140061551 | METHOD OF MANUFACTURING CONDUCTIVE MAYENITE COMPOUND - A method of manufacturing an electrical conductive mayenite compound, including, (1) a step of preparing a calcinated powder including calcium oxide and aluminum oxide at a ratio of 13:6 to 11:8 (based on molar ratio as converted to CaO:Al | 2014-03-06 |
| 20140061552 | PLASTIC-BASED COMPOSITE MATERIAL CAPABLE OF CONDUCTING ELECTRICITY AND SHIELDING ELECTROMAGNETIC WAVE AND PREPARATION METHOD THEREOF - Disclosed in the invention is a plastic-based composite material capable of conducting electricity and shielding electromagnetic wave. The plastic-based composite material is prepared from the following raw materials in parts by mass: 40 to 80 parts of plastic matrix, 5 to 15 parts of surface modified high-efficiency conductive agent, 10 to 40 parts of ferroferric oxide, 5 to 10 parts of compatibilizer, and 0.5 to 1 part of antioxidant. The product has good conductive property and mechanical properties, can shield the electromagnetic wave in a high degree, and can be widely applied to the fields of electronic consumer goods, remote monitoring/communication, military, and field/indoor power supply. | 2014-03-06 |
| 20140061553 | LANTHANUM BORIDE SINTERED BODY AND METHOD FOR PRODUCING THE SAME - A lanthanum boride sintered body | 2014-03-06 |
| 20140061554 | COMPOSITE MATERIAL COMPRISING BIO-FILLER AND SPECIFIC POLYMER - A composite material comprising 10-98 wt. % of a bio-based particulate or fibrous filler and at least 2 wt. % of a polyester derived from an aliphatic polyalcohol with 2-15 carbon atoms and a polyacid, wherein the polyacid comprises at least 10 wt. % of tricarboxylic acid. | 2014-03-06 |
| 20140061555 | REMOVABLE SADDLE AND EXTENSION FOR FLOOR JACK - An extension has a main extension body with a first extension end and a second extension end, an extension passage is defined there between. An annular extension recess is formed about the extension passage at the first extension end. An annular extension flange is formed about the extension passage at the second extension end. A saddle has a main saddle body with a first saddle end and a second saddle end with a saddle passage defined there between. An annular saddle flange is formed about the saddle passage at the second saddle end. A fastener has an elongate shaft with a first shaft end and a second shaft end. A head is at the first shaft end. A fastening engagement is about the second shaft end. The shaft is configured to be disposed within the saddle passage and the extension passage. | 2014-03-06 |
| 20140061556 | STRAP TENSIONING SYSTEM - A strap tensioning system is provided. The system includes a frame comprising a first side wall that retains a ledge. A core shaft retains a flexible shaft and is rotatable by a drive shaft as urged by a crank handle. The crank handle supports an arm that is pivotable with respect to the crank handle, between a stowed position where the arm is substantially parallel to the crank handle, and a locking position where the arm is substantially perpendicular to the crank handle. The crank handle and arm are configured such that the arm disposed within the ledge when the crank handle is in registry with the ledge and the arm is in the locked position, thereby preventing rotation of the crank handle with respect to the frame. | 2014-03-06 |
| 20140061557 | TRACTION SYSTEM USING A MULTI-TENDON CABLE WITH A DEFLECTION ANGLE - The traction system comprises a plurality of substantially parallel tendons ( | 2014-03-06 |
| 20140061558 | LEVEL WINDING DRUM WINCH - A level winding drum winch has a frame within which a rotatable drum is mounted. The frame is supported upon a pair of tracks upon which the frame may be slid from side to side. A motor connected to the drum rotates the drum for winding or paying out a cable wrapped around the drum. A feed screw attached within the frame is actuated by the motor to slide the frame from side to side as the cable is wound upon the drum. Thus, the cable is continuously directed at a substantially perpendicular angle, without bending or kinking, towards or away from the drum thereby forming a level winding and avoiding damage to the cable. The winch is particularly useful in handling relatively fragile composite cables useful for simultaneously towing and electronically communicating data with the objects towed by a boat. | 2014-03-06 |
| 20140061559 | Aircraft Engine Stand - This mobile, aircraft engine stand provides mobility and ease of operation by one person. The stand includes a frame, a pair of vertical jack screws vertically mounted on the frame and a precision rail system configured to allow for stable and efficient linear motion. A pair of quick change, engine lifting arms are attached to the pair of vertical jack screws; and an electrical control and control panel make unloading, transporting, assembling and moving an engine a one person operation. A plurality of casters allows for easy swiveling of the stand. | 2014-03-06 |
| 20140061560 | HYDRAULIC JACK WITH LOCKING - Hydraulic jack ( | 2014-03-06 |
| 20140061561 | FENCE POST CAP FOR ENTERTAINING - A fence post cap comprising an apparatus for holding small objects for entertaining (e.g. food and beverages). In a preferred embodiment, the cap comprises a small table, such as a round, square, or rectangular table, and/or a serving bowl, affixed to the top of a fence post that is part of an outdoor deck railing. The apparatus may be permanently affixed to the post, or non-permanently affixed wherein it may be easily exchanged with another cap suitable to an occasion. The cap may further comprise a means to attach the cap to the fence post, such as a base that affixes to the underside of the table/bowl and slides over the fence post. In a preferred embodiment, the base comprises a collar affixed to the underside of a pan that holds the apparatus (table top), and wherein the pan is the same dimensions as the table top. | 2014-03-06 |
| 20140061562 | FENCE AND FENCE BASE - A fence includes a plurality of bases, each base having a body having a floor, a top wall, side walls and end walls defining an interior chamber; a first projection extending from one of the end walls and having a top wall; and a second projection extending from another one of the end walls and having a bottom wall; wherein the bottom wall of the second projection and the top wall of the first projection are both configured to receive a pole and wherein the first projection of a first base of the bases can overlap the second projection of a second base of the bases when the floor of the first and second bases are resting on a common surface. The fence further includes a plurality of poles, each inserted into and maintained erect by one of the bases; and a mesh fencing material tensioned between the poles. | 2014-03-06 |
| 20140061563 | GATE FOR PLAY YARD - A play yard includes: a plurality of side panels coupled to one another; a gate panel coupled to two of the plurality of side panels to create an enclosed space, the gate panel including: a panel frame defining an opening; a gate mounted to the panel frame in the opening to swing from a closed position to an open position; a first locking mechanism on the gate to hold the gate in the closed position; and a second locking mechanism on the panel frame to hold the gate in the closed position. | 2014-03-06 |
| 20140061564 | CONNECTION DEVICE - A connection device is provided including a body portion and at least first and second attachment means for the attachment of the device to or between two or more objects in use. Adjustment means are provided to allow the distance between the at least first and second attachment means to be adjustable in use. | 2014-03-06 |
| 20140061565 | NONVOLATILE MEMORY - A nonvolatile memory according to an embodiment includes a first wiring line; a second wiring line arranged above the first wiring line and extending in a direction crossing the first wiring line; and a resistance change layer arranged in an intersection region of the first wiring line the second wiring line, the second wiring line including a first member extending in the direction in which the second wiring line extends, and an electrode layer containing a metal element arranged on a side surface of the first member along the direction in which the second wiring line extends, a lower surface of the electrode layer being in contact with an upper surface of the resistance change layer. | 2014-03-06 |
| 20140061566 | SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING SAME - A semiconductor storage device according to an embodiment includes a first conductive layer, a variable resistance layer, an electrode layer, a first liner layer, a stopper layer, and a second conductive layer. The first liner layer is configured by a material having a property for canceling an influence of an orientation of a lower layer of the first liner layer, the property of the first liner layer being superior compared with that of the stopper layer. The stopper layer is acted upon by an internal stress in a compressive direction at room temperature. | 2014-03-06 |
| 20140061567 | NONVOLATILE MEMORY DEVICE - According to one embodiment, a nonvolatile memory device includes a first wiring, a second wiring, and a memory cell provided between the first wiring and the second wiring. The memory cell includes a memory layer, a rectifying element layer, and a protective resistance layer including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type. | 2014-03-06 |
| 20140061568 | RESISTIVE MEMORY DEVICES - Electronic apparatus, systems, and methods can include a resistive memory cell having a structured as an operably variable resistance region between two electrodes and a metallic barrier disposed in a region between the dielectric and one of the two electrodes. The metallic barrier can have a structure and a material composition to provide oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell. Additional apparatus, systems, and methods are disclosed. | 2014-03-06 |
| 20140061569 | FLEXIBLE NON-VOLATILE MEMORY - A manufacturing method for manufacturing a flexible non-volatile memory is provided. The manufacturing method comprises the steps outlined below. A flexible substrate is provided. A planarization layer is formed on the flexible substrate. A metal bottom electrode layer is deposited on the planarization layer. A mask is formed to define a plurality of patterns. An AZTO layer having a plurality of electrically independent AZTO cells is deposited on the metal bottom electrode layer corresponding to the patterns. A top electrode layer is deposited on the AZTO layer corresponding to the AZTO cells to form a plurality of non-volatile memory cells. | 2014-03-06 |
| 20140061570 | MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a memory device includes a first electrode, a first resistance change layer, a first insulating section, a second electrode and an intermediate layer. The first resistance change layer is provided on the first electrode. The first insulating section is provided on the first resistance change layer. The second electrode is provided on the first resistance change layer. The second electrode is in contact with the first resistance change layer. The intermediate layer is provided between the second electrode and the first insulating section. The intermediate layer is in contact with the second electrode and the first insulating section. | 2014-03-06 |
| 20140061571 | RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A resistive memory device and a method for manufacturing the same are provided. The resistive memory device includes a lower electrode, a variable resistive layer formed on the lower electrode and configured so that the volume thereof is contracted or expanded according to temperature, and an upper electrode formed on the variable resistive layer. At least a portion of the lower electrode is configured to be electrically connected to the upper electrode. | 2014-03-06 |
| 20140061572 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - This technology relates to a semiconductor device and a method of manufacturing the same. A semiconductor device may include a line layer formed over a substrate, and connection structures each configured to include a first metal layer pattern, a barrier layer pattern, and a second metal layer pattern sequentially stacked over the line layer, for bonding another substrate to the substrate. In accordance with this technology, abnormal silicidation may be prevented because the barrier layer is formed at the bonding interface of the substrates, and the bonding energy of the substrates may be improved by titanium (Ti)-silicon (Si) bonding. | 2014-03-06 |
| 20140061573 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY DEVICE, AND METHODS OF MANUFACTURING THE SAME - A nonvolatile memory element includes: a lower electrode formed above a substrate; a first variable resistance layer formed above the lower electrode and comprising a first metal oxide; a second variable resistance layer formed above the first variable resistance layer and comprising a second metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first metal oxide; and an upper electrode formed above the second variable resistance layer. A single step is formed in an interface between the first variable resistance layer and the second variable resistance layer. The second variable resistance layer is formed to cover the step and have, above the step, a bend covering the step. The bend, seen from above, has only one corner in a surface of the second variable resistance layer. | 2014-03-06 |
| 20140061574 | THREE DIMENSIONAL MEMORY ARRAY ARCHITECTURE - Three dimension memory arrays and methods of forming the same are provided. An example three dimension memory array can include a stack comprising a plurality of first conductive lines separated from one another by at least an insulation material, and at least one conductive extension arranged to extend substantially perpendicular to the plurality of first conductive lines, such that the at least one conductive extension intersects a portion of at least one of the plurality of first conductive lines. Storage element material is formed around the at least one conductive extension. Cell select material is formed around the at least one conductive extension. | 2014-03-06 |
| 20140061575 | THREE DIMENSIONAL MEMORY ARRAY ARCHITECTURE - Three dimensional memory array architectures and methods of forming the same are provided. An example memory array can include a stack comprising a plurality of first conductive lines at a number of levels separated from one another by at least an insulation material, and at least one conductive extension arranged to extend substantially perpendicular to the plurality of first conductive lines. Storage element material is formed around the at least one conductive extension. Cell select material is formed around the at least one conductive extension. The at least one conductive extension, storage element material, and cell select material are located between co-planar pairs of the plurality of first conductive lines. | 2014-03-06 |
| 20140061576 | FIN-TYPE MEMORY - Memory devices and methods for forming a device are disclosed. A substrate prepared with a lower electrode level with bottom electrodes is provided. Fin stack layers are formed on the lower electrode level. Spacers are formed on top of the fin stack layers. The spacers have a width which is less than a lithographic resolution. The fin stack layers are patterned using the spacers as a mask to form fin stacks. The fin stacks contact the bottom electrodes. An interlevel dielectric (ILD) layer is formed on the substrate. The ILD layer fills spaces around the fin stacks. An upper electrode level is formed on the ILD layer. The upper electrode level has top electrodes in contact with the fin stacks. The electrodes and fin stacks form fin-type memory cells. | 2014-03-06 |
| 20140061577 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - First, a trench penetrating first conductive layers and interlayer insulating layers is formed. Next, a column-shaped conductive layer is formed to fill the trench via a side wall layer. Then, after formation of the side wall layer, by migration of oxygen atoms between the side wall layer and the first conductive layers or migration of oxygen atoms between the side wall layer and the interlayer insulating layers, a proportion of oxygen atoms in the side wall layer adjacent to the interlayer insulating layers is made larger than a proportion of oxygen atoms in the side wall layer adjacent to the first conductive layers, whereby the side wall layer adjacent to the first conductive layers is caused to function as the variable resistance element. | 2014-03-06 |
| 20140061578 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device below comprises: a memory cell array configured having memory cells arranged therein disposed at intersections of a plurality of first lines and a plurality of second lines formed so as to intersect each other, and the memory cells each comprising a variable resistance element; and a control circuit configured to select and drive the first lines and the second lines. The variable resistance element is configured by a transition metal oxide film. The variable resistance element is electrically connected to a first electrode configured from a metal at a first surface and is electrically connected to a second electrode at a second surface which is on an opposite side to the first surface. A first insulating film is formed between the first electrode and the variable resistance element. The first insulating film is formed by a first material that is formed by covalent binding. | 2014-03-06 |
| 20140061579 | NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE - A variable resistance nonvolatile memory element includes a first electrode, a second electrode, and a variable resistance layer including: a first oxide layer including a metal oxide having non-stoichiometric composition and including p-type carriers; a second oxide layer located between and in contact with the first oxide layer and a second electrode and including a metal oxide having non-stoichiometric composition and including n-type carriers; an oxygen reservoir region located in the first oxide layer, having no contact with the first electrode, and having an oxygen content atomic percentage higher than that of the first oxide layer; and a local region located in the second oxide layer, having contact with the oxygen reservoir region, and having an oxygen content atomic percentage lower than that of the second oxide layer. | 2014-03-06 |
| 20140061580 | SEMICONDUCTOR STACK INCORPORATING PHASE CHANGE MATERIAL - A semiconductor stack for performing at least a logic operation includes adjacent layers arranged in a stacked configuration with each layer comprising at least a phase-change memory cell in which a phase-change material is provided between a heater electrical terminal and at least two further heater electrical terminals, the phase-change material between the heater electrical terminal and each of the two further heater electrical terminals being operable in one of at least two reversibly transformable phases, an amorphous phase and a crystalline phase; wherein the semiconductor stack, when in use, is configurable to store information by way of an electrical resistance of the phase of the phase-change material between each heater electrical terminal and each of the two further heater electrical terminals in each layer, and the logic operation is performed on the basis of the information stored in the adjacent layers. | 2014-03-06 |
| 20140061581 | SELF-ALIGNED PROCESS TO FABRICATE A MEMORY CELL ARRAY WITH A SURROUNDING-GATE ACCESS TRANSISTOR - A memory array including a plurality of memory cells. Each word line is electrically coupled to a set of memory cells, a gate contact and a pair of dielectric pillars positioned parallel to the word line. Dielectric pillars are placed on both sides of the gate contact. Also a method to prevent a gate contact from electrically connecting to a source contact for a plurality of memory cells on a substrate. The method includes formation of a pair of pillars made of an insulating material over the substrate, depositing an electrically conductive gate material between and over the pillars, etching the gate material such that it both partially fills a space between the pair of pillars and forms a word line for the memory cells, and depositing a gate contact between the dielectric pillars such that the gate contact is in electrical contact with the gate material. | 2014-03-06 |
| 20140061582 | SUSPENDED NANOWIRE STRUCTURE - A mandrel having vertical planar surfaces is formed on a single crystalline semiconductor layer. An epitaxial semiconductor layer is formed on the single crystalline semiconductor layer by selective epitaxy. A first spacer is formed around an upper portion of the mandrel. The epitaxial semiconductor layer is vertically recessed employing the first spacers as an etch mask. A second spacer is formed on sidewalls of the first spacer and vertical portions of the epitaxial semiconductor layer. Horizontal bottom portions of the epitaxial semiconductor layer are etched from underneath the vertical portions of the epitaxial semiconductor layer to form a suspended ring-shaped semiconductor fin that is attached to the mandrel. A center portion of the mandrel is etched employing a patterned mask layer that covers two end portions of the mandrel. A suspended semiconductor fin is provided, which is suspended by a pair of support structures. | 2014-03-06 |
| 20140061583 | SILICON NANOTUBE MOSFET - A nanotubular MOSFET device extends a scaling roadmap while maintaining good short channel effects and providing competitive drive current. The nanotubular MOSFET device includes a concentric tubular inner and outer gate separated from each other by a tubular shaped epitaxially grown silicon layer, and a source and drain respectively separated by spacers surrounding the tubular inner and outer gates. | 2014-03-06 |
| 20140061584 | DEVICES AND METHODS - A device comprising an arrangement of device materials and a layer comprising a material with heat-dissipating properties disposed over at least a portion thereof is disclosed. The device can further include an interleave layer disposed between the top surface of the arrangement of device materials and the layer comprising a material with heat-dissipating properties. A barrier layer may further be included between the arrangement of device materials and the layer comprising a material with heat-dissipating properties. Methods are also disclosed. In certain embodiments, a device includes quantum confined semiconductor nanoparticles. | 2014-03-06 |
| 20140061585 | LIGHT EMITTING DIODE - The present invention provides a light emitting diode, which comprises a first LED die and a second LED die, each die comprising a first semi-conductive layer, a second semi-conductive layer, and a multiple quantum well layer disposed between the first and the second semi-conductive layers, wherein the first semi-conductive layer of the first LED die is coupled to the second semi-conductive layer of the second LED die so as to form a serially connected structure whereby the consuming current and heat generation of the light emitting diode are lowered so that the size of heat dissipating device for the light emitting diode can be reduced and illumination of the light emitting diode can be enhanced. | 2014-03-06 |
| 20140061586 | Nitride Nanowires and Method of Producing Such - The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor. | 2014-03-06 |
| 20140061587 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor device includes a dislocation control layer on a substrate, and a nitride semiconductor layer on the dislocation control layer. The dislocation control layer includes a nanocomposite of a first nanoparticle made of a first material and at least one second nanoparticle made of a second material. | 2014-03-06 |
| 20140061588 | GROUP III-V COMPOUND SEMICONDUCTOR PHOTO DETECTOR, METHOD OF FABRICATING GROUP III-V COMPOUND SEMICONDUCTOR PHOTO DETECTOR, PHOTO DETECTOR, AND EPITAXIAL WAFER - An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer | 2014-03-06 |
| 20140061589 | GERMANIUM-BASED QUANTUM WELL DEVICES - A quantum well transistor has a germanium quantum well channel region. A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the channel. A group III-V barrier layer adds strain to the channel. Graded silicon germanium layers above and below the channel region improve performance. Multiple gate dielectric materials allow use of a high-k value gate dielectric. | 2014-03-06 |
| 20140061590 | GRAPHENE DEVICE AND METHOD OF MANUFACTURING THE SAME - The method of manufacturing a graphene device includes forming an insulating material layer on a substrate, forming first and second metal pads on the insulating material layer spaced apart from each other, forming a graphene layer having a portion defined as an active area between the first and second metal pads on the insulating material layer, forming third and fourth metal pads on the graphene layer spaced apart from each other with the active area therebetween, the third and fourth metal pads extending above the first metal pad and the second metal pad, respectively, forming a first protection layer to cover all the first and second metal pads, the graphene layer, and the third and fourth metal pads, and etching an entire surface of the first protection layer until only a residual layer made of a material for forming the first protection layer remains on the active area. | 2014-03-06 |
| 20140061591 | OLED DEVICES WITH INTERNAL OUTCOUPLING - Optoelectronic devices with enhanced internal outcoupling include a substrate, an anode, a cathode, an electroluminescent layer, and electron transporting layer comprising a fluoro compound of formula I | 2014-03-06 |
| 20140061592 | OLED DEVICES WITH INTERNAL OUTCOUPLING - Optoelectronic devices that have enhanced internal outcoupling are disclosed. The devices include a substrate, an anode, a cathode, an electroluminescent layer, and a hole injecting layer. The hole injecting layer includes inorganic nanoparticles that have a bimodal particle size distribution and which are dispersed in an organic matrix. | 2014-03-06 |
| 20140061593 | OLED DEVICES WITH INTERNAL OUTCOUPLING - Optoelectronic devices with enhanced internal outcoupling include a substrate, an anode, a cathode, an electroluminescent layer, and an electron transporting layer comprising inorganic nanoparticles dispersed in an organic matrix. | 2014-03-06 |
| 20140061594 | HIGH EFFICIENCY AND BRIGHTNESS FLUORESCENT ORGANIC LIGHT EMITTING DIODE BY TRIPLET-TRIPLET FUSION - A first device is provided. The first device further comprises an organic light emitting device. The organic light emitting device further comprises an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer may include an organic host compound and at least one organic emitting compound capable of fluorescent emission at room temperature. Various configurations are described for providing a range of current densities in which T-T fusion dominates over S-T annihilation, leading to very high efficiency fluorescent OLEDs. | 2014-03-06 |
| 20140061595 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An OLED display device is provided. The OLED display device includes a substrate segmented into a plurality sub-pixel regions, a thin film transistor formed in each of the sub-pixel regions, an insulating layer and a planarizion layer formed on the thin film transistor, a semitransparent reflective layer selectively formed in each sub-pixel region on the planarizion layer, a protective layer formed on the semitransparent reflective layer, an anode electrode formed in a region corresponding to the semitransparent reflective layer on the protective layer and connected to the thin film transistor, an organic light emitting layer connected to the anode electrode, and emitting light, and a cathode electrode formed on the organic light emitting layer. | 2014-03-06 |
| 20140061596 | ORGANIC LIGHT-EMITTING DIODE DISPLAY PANEL AND MANUFACTURING METHOD FOR THE SAME - The present invention discloses an OLED display panel which includes a first TFT array substrate, a first cover and a structural stiffening glue. A first frit and a second frit of the first cover have the structural stiffening glue provided at an outer side thereof, and the structural stiffening glue is in contact with the first TFT array substrate and the first cover. The present invention further discloses a method for manufacturing the OLED display panel. The present invention enables more solid and stable for a structure of the OLED display panel. | 2014-03-06 |
| 20140061597 | ORGANIC LIGHT EMITTING DISPLAY AND METHOD FOR MANUFACTURING THE SAME - Disclosed are an organic light emitting display that has a configuration excluding a polarizing plate and exhibits improved flexibility and visibility, and a method for manufacturing the same, the organic light emitting display includes a touch electrode array facing the organic light emitting diode on the second buffer layer, the touch electrode array including first and second touch electrodes intersecting each other and an exterior light shielding layer including at least a color filter layer, an adhesive layer formed between the organic light emitting diode and the touch electrode array. | 2014-03-06 |
| 20140061598 | Organic Light Emitting Display Device and Method of Fabricating the Same - Disclosed is an organic light emitting display device including: a first substrate including a plurality of pixel regions; a thin film transistor (TFT) formed in each of the plurality of pixel regions of a display unit of the substrate; a first electrode formed in the pixel region of the display unit; an organic light emitting unit formed in the pixel region of the display unit to emit light; a second electrode formed on the organic light emitting unit of the display unit; a passivation layer formed on the second electrode; and a second substrate formed on the passivation layer, wherein the second electrode is made of an alloy of silver (Ag) and an alkaline earth metal or an alloy of silver (Ag) and a rare earth metal, a composition ratio of the silver (Ag) and the alkaline earth metal or the rare earth metal is (more than 1):1, and a thickness of the second electrode ranges from 200 Å to 350-400 Å. | 2014-03-06 |
| 20140061599 | Organic Light Emitting Display Device - An organic light emitting display device with improved thermal reliability is disclosed. The organic light emitting display device includes a substrate, and an organic light emitting device that includes a first electrode, an organic light emitting layer including a first host, a second host, and a dopant, and a second electrode sequentially stacked on the substrate. The first host and the second host have different glass transition temperatures. | 2014-03-06 |
| 20140061600 | PYRENE COMPOUND AND ORGANIC LIGHT EMITTING DIODE DEVICE INCLUDING THE SAME - A pyrene compound and an organic light emitting diode device including the same are disclosed. The organic light emitting diode device includes at least two stacks provided between a first electrode and a second electrode, and a charge generation layer provided between the stacks and including an N type charge generation layer and a P type charge generation layer, wherein the N type charge generation layer is made of the pyrene compound. | 2014-03-06 |
| 20140061601 | ANTHRACENE COMPOUND AND ORGANIC LIGHT EMITTING DIODE INCLUDING THE SAME - An anthracene compound and organic light emitting diode including the same are disclosed. The organic light emitting diode includes, at least two stacks formed between a first electrode and a second electrode and a charge generation layer (CGL) including an N-type CGL and a P-type CGL formed between the stacks, wherein the N-type CGL is formed of the anthracene compound. | 2014-03-06 |
| 20140061602 | ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device contains an anode and a cathode facing each other, and intervening therebetween at least two hole transporting layers and a light emitting layer sequentially, and one of the hole transporting layers contains a compound having a particular structure having a fluorene structure at the center thereof, and is not adjacent to the light emitting layer. The organic electroluminescence device has a hole transporting layer having an increased thickness, is capable of being controlled in the thickness of the optical film, and has an enhanced device capability. | 2014-03-06 |
| 20140061603 | DISPLAY PANEL AND MANUFACTURING METHOD OF THE SAME - In one aspect, a display panel and a manufacturing method of the same is provided. The display panel includes a non-emission region layer having a plurality of emission regions and a connection region that is open to connect adjacent emission regions; an organic emission layer formed in each of the plurality of emission regions; a counter electrode formed in the emission regions and the connection region; and an encapsulation layer formed on the counter electrode. | 2014-03-06 |
| 20140061604 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE - A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting layer is provided between a pair of electrodes. The light-emitting layer is a stack of a first light-emitting layer, which contains a first phosphorescent compound, a first organic compound having an electron-transport property, and a second organic compound having a hole-transport property and is provided on the anode side, and a second light-emitting layer, which contains at least a second phosphorescent compound and the first organic compound having an electron-transport property. A combination of the first organic compound and the second organic compound forms an exciplex. | 2014-03-06 |
| 20140061605 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF - An organic light emitting diode display and a manufacturing method thereof, and more particularly, an organic light emitting diode display having improved light extraction efficiency by forming both a first electrode and a second electrode as reflective electrodes to guide generated light to the side of a pixel, and a manufacturing method thereof. | 2014-03-06 |
| 20140061606 | THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND DISPLAY DEVICE INCLUDING THE SAME - A thin-film transistor (TFT) array substrate includes a first conductive layer of a TFT, a second conductive layer that partially overlaps the first conductive layer, a through hole in a layer between the first and second conductive layers, a node contact hole integrally formed to include a first contact hole in the first conductive layer and a second contact hole in the second conductive layer such that the first contact hole is continuous with the second contact hole and is not separated from the second contact hole by an insulation layer, and a connection node that is in another layer different from the first conductive layer and the second conductive layer. The connection node is connected to the first and second conductive layers through the through hole and the node contact hole. | 2014-03-06 |
| 20140061607 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device includes: a substrate; an active layer on the substrate; a gate electrode insulated from the active layer and overlapping with the active layer; a source electrode including a first source electrode layer, connected to the active layer, and a second source electrode layer connected to the first source electrode layer, the second source electrode layer being larger than the first source electrode layer; a drain electrode including a first drain electrode layer connected to the active layer, and a second drain electrode layer connected to the first drain electrode layer, the second drain electrode layer being larger than the first drain electrode layer; a first electrode directly connected to a top surface of the source electrode or the drain electrode; an intermediate layer on the first electrode and including an organic emission layer; and a second electrode on the intermediate layer. | 2014-03-06 |
| 20140061608 | OLEDS AND OTHER ELECTRONIC DEVICES USING DESICCANTS - Electronic devices that use desiccants for protection from moisture. The electronic devices comprise a substrate and an organic element disposed over the top surface of the substrate. The substrate has one or more voids which may store desiccants. The voids may penetrate partially or completely through the thickness of the substrate. An environmental barrier is disposed over the organic element and the voids. Also provided are methods for making electronic devices that use desiccants. | 2014-03-06 |
| 20140061609 | NOVEL COMPOUNDS FOR ORGANIC ELECTRONIC MATERIAL AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME - Provided are novel compounds in accordance with Formula I for an organic electronic material and an organic electroluminescent device using same. The compound for an organic electronic material disclosed herein exhibits high electron transport efficiency and thus prevents crystallization upon manufacturing a device, and also facilitates the formation of a layer, thus improving current properties of the device. Thereby, OLED devices having improved power efficiency as well as reduced operating voltage can be manufactured. | 2014-03-06 |
| 20140061610 | ORGANIC LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A method for manufacturing an organic light emitting device includes: forming an organic light emitting display panel including a substrate provided on a support substrate, an organic light emitting element on the substrate, and a thin film encapsulating film covering the organic light emitting element; detaching the support substrate from the organic light emitting display panel; attaching a bottom protecting film to a bottom of the organic light emitting display panel, the bottom protecting film comprising a first electricity removing layer configured to remove static electricity; and cutting the organic light emitting display panel into a plurality of organic light emitting devices. | 2014-03-06 |
| 20140061611 | LIGHT SOURCE MODULE - A light source module, including a first electrode, a second electrode, a first light-emitting unit and a second light-emitting unit, is provided. The first light-emitting unit and the second light-emitting unit both are electrically connected between the first electrode and the second electrode and are configured to emit a light by a driving of a voltage signal formed between the first electrode and the second electrode. A first light-emitting area of the first light-emitting unit has an area size different to that of a second light-emitting area of the second light-emitting unit. The first light-emitting unit is configured to emit a light with a first spectrum, and the second light-emitting unit is configured to emit a light with a second spectrum. | 2014-03-06 |
| 20140061612 | DISPLAY DEVICE - A highly reliable display device is provided. Alternatively, a display device with a narrow frame is provided. The display device includes: a first substrate and a second substrate facing each other; a pixel portion including a display element, between the first substrate and the second substrate; a first sealant provided around a periphery of the pixel portion; a second sealant which is in contact with at least one of a side surface of the first substrate and a side surface of the second substrate and with which a gap between the first substrate and the second substrate is filled; and a third sealant overlapping with a side surface of the first sealant and at least one of the side surface of the first substrate and the side surface of the second substrate with the second sealant interposed therebetween. | 2014-03-06 |
| 20140061613 | Light Emitting Device and Method of Manufacturing the Same - A light-emitting device structured so as to increase the amount of light taken out in a certain direction is provided as well as a method of manufacturing this light emitting device. As a result of etching treatment, an upper edge portion of an insulator ( | 2014-03-06 |
| 20140061614 | COMPOUNDS FOR USE IN LIGHT EMITTING DEVICES - Optionally substituted ambipolar naphthalene compounds useful in light-emitting devices are described, including without limitation 9-(3-(10-(3-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl)anthracen-9-yl)phenyl)-9H-carbazole and 9-(3-(10-(3-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl)anthracen-9-yl)phenyl)-9H-carbazole. | 2014-03-06 |
| 20140061615 | ORGANIC THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE - There are provided an organic thin film transistor array substrate and a method for manufacturing the same which increases the manufacturing efficiency of the organic thin film transistor array substrate. In the method, a pattern layer of pixel electrode, and a pattern layer of source electrode and data line and a pattern layer of drain electrode, which are located above the pattern layer of pixel electrode, are formed on a substrate through one patterning process; an organic semiconductor layer that covers the pattern layer of source electrode and data line and the pattern layer of drain electrode and a gate insulating layer that covers the organic semiconductor layer are formed through one patterning process; and a pattern layer of gate electrode and gate line is formed through one patterning process on the substrate formed with the gate insulating layer. | 2014-03-06 |
| 20140061616 | ORGANIC SEMICONDUCTOR MATERIAL, COATING LIQUID CONTAINING THE MATERIAL, AND ORGANIC THIN FILM TRANSISTOR - An organic semiconductor material is represented by the following formula (1), wherein two or more of R | 2014-03-06 |
| 20140061617 | METHOD AND APPARATUS FOR INTEGRATING AN INFRARED (HR) PHOLOVOLTAIC CELL ON A THIN PHOTOVOLTAIC CELL - Embodiments of the subject invention relate to a method and apparatus for providing an at: least partially transparent one-side emitting OLED. The at least partially transparent one-side emitting OLED can include a mirror, such as a mirror substrate, substrate with a transparent anode and a transparent cathode. The mirror can allow at least a portion of the visible spectrum of light to pass through, while also reflecting at least another portion of the visible spectrum of light. The mirror can reflect at least a portion of the visible light emitted by a light emitting layer of the OLED incident on a first surface of the mirror, while allowing another portion of the visible light incident on a second surface of the mirror to pass through the mirror. | 2014-03-06 |
| 20140061618 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE - An organic light-emitting display device including a substrate on which a display region and a non-display region are defined is described, the organic light-emitting display device comprising: a first electrode disposed on a substrate; an intermediate layer disposed on the first electrode and including an organic light-emitting layer; a second electrode disposed on the intermediate layer; an encapsulation layer disposed on the substrate; a plurality of pad units disposed on the non-display region; a wiring unit disposed on the display region; and a bridge wiring that is disposed across the display region and the non-display region and connects one of the plurality of pad units and the wiring unit to each other. | 2014-03-06 |
| 20140061619 | OLED ENCAPSULATING STRUCTURE AND MANUFACTURING METHOD THEREOF, AND LIGHT-EMITTING DEVICE - An OLED encapsulating structure and a manufacturing method thereof, and a light-emitting device are disclosed. The OLED encapsulating structure comprises: a base substrate, an OLED, barrier layers, and optical modulation layers; the OLED is formed on the base substrate; the barrier layers and the optical modulation layers are alternately and periodically formed on the OLED. The OLED encapsulating structure can reduce viewing-angle dependence of an OLED caused by a micro-cavity effect. | 2014-03-06 |
| 20140061620 | SUBSTITUTED BIPHENYL COMPOUNDS FOR USE IN LIGHT-EMITTING DEVICES - This disclosure relates to compounds for use in light-emitting devices are described herein. These compounds may include a biphenyl that includes four substituents, such as benzoxazolyl, benzothiazolyl, or benzimidazolyl substituents, such as a compound represented by Formula 1. These compounds can incorporated into a nanostructure material or a plurality of nanostructures, which can be useful for light-scattering or light-extraction, for example, to increase the efficiency of light-emitting devices. | 2014-03-06 |
| 20140061621 | ORGANIC SEMICONDUCTOR ILLUMINATION DEVICE AND ORGANIC LIGHT EMITTING COMPONENT THEREOF - An organic semiconductor illumination device including a first and second organic light emitting components is provided. Each of the organic light emitting components includes a transparent substrate, an organic light emitting structure, a first electrode structure and a second electrode structure. The transparent substrate has a first region and a second region. The first electrode structure has a first electrode body disposed between the transparent substrate and the organic light emitting structure and having a first contact portion extending from the first electrode body to the second region. The second electrode structure having a second electrode body over the organic light emitting structure and having a second contact portion extending from the second electrode body to the second region. The second region of the second organic light emitting component is disposed over the first region of the first organic light emitting component so as to form an overlapping region. | 2014-03-06 |
| 20140061622 | ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device according to the invention includes: a cathode; an anode; and an organic layer being interposed between the cathode and the anode, the organic layer comprising one or more layers comprising at least an emitting layer. The emitting layer contains: an anthracene derivative represented by a formula ( | 2014-03-06 |
| 20140061623 | ANTIMONY-FREE GLASS, ANTIMONY-FREE FRIT AND A GLASS PACKAGE THAT IS HERMETICALLY SEALED WITH THE FRIT - An antimony-free glass comprising TeO | 2014-03-06 |
| 20140061624 | DISPLAY DEVICE - A space between a lower substrate and an upper substrate including an organic EL light-emitting layer which includes a display region for displaying an image is filled by a dam material which is applied to enclose an exterior edge of the display region and a filling material which is dripped into the interior side of the dam material. The dam material is an epoxy resin with a comparatively high viscosity before hardening and the filling material is an epoxy resin with a comparatively low viscosity before hardening. A substrate concave part is formed between the display region on a surface of the lower substrate and a coating region of the dam material. | 2014-03-06 |
| 20140061625 | ELECTROLUMINESCENT DEVICES COMPRISING INSULATOR-FREE METAL GRIDS - A device, such as an electroluminescent device, comprising (i) a transparent conductor; (ii) a metal grid disposed on said transparent conductor; and (iii) said metal grid is not covered by an insulator, but by a hole injection layer comprising at least one conjugated polymer and at least one matrix polymer. Methods for making the electroluminescent device are also disclosed. | 2014-03-06 |
| 20140061626 | ORGANIC LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME - The present invention provides an organic light emitting diode comprising a first electrode, a second electrode and an organic material layer of one or more layers disposed between the first electrode and the second electrode, in which the organic material layer comprises a light emitting layer, an organic material layer comprising the compound represented by Formula 1 is comprised between the first electrode and the light emitting layer, and the light emitting layer comprises a host comprising the compound represented by Formula 1 and a dopant. | 2014-03-06 |
| 20140061627 | ORGANIC EL ELEMENT AND SOLUTION CONTAINING ORGANIC EL MATERIAL - An organic electroluminescence device ( | 2014-03-06 |
| 20140061628 | FUSED AROMATIC DERIVATIVE AND ORGANIC ELECTROLUMINESCENCE DEVICE USING THE SAME - A fused aromatic derivative shown by the following formula (1): | 2014-03-06 |
| 20140061629 | LIGHT-EMITTING DEVICE MATERIAL AND LIGHT-EMITTING DEVICE - A light emitting device material containing a pyrene compound of general formula (1) and a light emitting device. In formula (1), R | 2014-03-06 |
| 20140061630 | AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENCE DEVICE - An aromatic amine derivative having a specific structure. An organic electroluminescence device which is composed of one or more organic thin film layers sandwiched between a cathode and an anode, wherein at least one of the organic thin film layers, especially a hole transporting layer, contains the aromatic amine derivative. The aromatic amine derivative has at least one substituted or unsubstituted dibenzofuran skeleton and at least one substituted or unsubstituted terphenylene skeleton. Because the molecules in the aromatic amine derivate hardly crystallize, organic electroluminescence devices improving their production yield and having prolonged lifetime are provided. | 2014-03-06 |
| 20140061631 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - A thin film transistor and a manufacturing method thereof. The thin film transistor includes: a gate electrode; a gate insulating layer disposed on the gate electrode; a first semiconductor disposed on the gate insulating layer; a second semiconductor disposed on the first semiconductor and having a different plane shape from the first semiconductor; and a source electrode and a drain electrode that are disposed on the second semiconductor and face each other. | 2014-03-06 |
