09th week of 2015 patent applcation highlights part 13 |
Patent application number | Title | Published |
20150053855 | CHARGED PARTICLE BEAM APPARATUS AND METHOD OF CORRECTING LANDING ANGLE OF CHARGED PARTICLE BEAM - A scanning electron microscope (SEM) is configured so that SEM images are acquired while scanning a pyramid pattern on a sample plane from four directions. Landing angle of the electron beam is calculated from these SEM images, which are then averaged, whereby inclination angle of the electron beam that is less influenced from scan distortion can be found. | 2015-02-26 |
20150053856 | Protein Layers And Their Use In Electron Microscopy - Protein layers ( | 2015-02-26 |
20150053857 | STAGE APPARATUS, AND CHARGED PARTICLE BEAM APPARATUS USING SAME - The purpose of the present invention is to provide a stage apparatus that effectively suppresses the transmission of heat generated by a drive mechanism to a sample, and a charged particle beam apparatus using the same. In order to achieve the purpose, there are proposed a stage apparatus and a charged particle beam apparatus. The stage apparatus comprises a table; a drive source that drives the table in a predetermined direction; a first connection member provided between the table and the drive source; a second connection member provided between the table and the drive source and closer to the drive source than the first member; a slide unit supported by the second connection member; and a rail guiding the slide unit in a predetermined direction, the first connection member comprising a member having a relatively low heat conductivity with respect to the second connection member. | 2015-02-26 |
20150053858 | Bolometric Detector With A Compensation Bolometer Having An Enhanced Thermalization - A bolometric detector includes a substrate; bolometric detection microbridges suspended above the substrate and thermally insulated from the substrate; bolometric compensation microbridges suspended above the substrate and thermalized to the substrate; and a read circuit formed in the substrate to apply a biasing to the detection microbridges and to the compensation microbridges and to form differences between signals generated by detection microbridges and signals generated by compensation microbridges under the effect of the applied biasing. Each detection microbridge and each compensation microbridge includes electrically-conductive anchoring nails connected to the read circuit, a membrane attached to the anchoring nails above the substrate, and a thermometric element arranged in the membrane. The detector further includes thermal short-circuit elements between the membrane of each compensation microbridge and the substrate. | 2015-02-26 |
20150053859 | PYROELECTRIC-TYPE INFRARED SENSOR - A pyroelectric-type infrared sensor is provided with: a sensor element; a shield case for covering the sensor element; an infrared transmission filter; an output circuit, which performs impedance conversion to output signals of the sensor element and outputs the signals; and at least one reflecting film. In the pyroelectric-type infrared sensor, the at least one reflecting film, which reflects infrared, is provided between the infrared transmission filter attached to the shield case and surface electrodes, and the infrared transmission filter is disposed extremely close to the surface electrodes. | 2015-02-26 |
20150053860 | MANUFACTURING NANOWIRE PHOTO-DETECTOR GROWN ON A BACK-SIDE ILLUMINATED IMAGE SENSOR - An embodiment relates to a method of manufacturing a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. | 2015-02-26 |
20150053861 | Interference-compensating NDIR Gas Sensor for Measuring Acetylene - A gas sample separated from transformer oil is circulated through an NDIR gas sensor system which obtains an acetylene concentration by calculating a detected acetylene concentration obtained by an absorption biased (“AB”) NDIR acetylene gas sensor, calculating a detected carbon dioxide concentration obtained by an AB NDIR carbon dioxide gas sensor, calculating a detected water vapor concentration obtained by an AB NDIR water vapor NDIR gas sensor and then determining the acetylene concentration from the detected acetylene concentration through use of the detected carbon dioxide and water vapor concentrations to compensate for their interference. | 2015-02-26 |
20150053862 | Motorized Variable Path Length Cell for Spectroscopy - The present invention is thus directed to an automated system of varying the optical path length in a sample that a light from a spectrophotometer must travel through. Such arrangements allow a user to easily vary the optical path length while also providing the user with an easy way to clean and prepare a transmission cell for optical interrogation. Such path length control can be automatically controlled by a programmable control system to quickly collect and stores data from different path lengths as needed for different spectrographic analysis. Moreover, the system utilizes configured wedge shaped windows to best minimize the reflections of light which cause periodic variation in transmission at different wave lengths (commonly described as “channel spectra”). Such a system, as presented herein, is able to return best-match spectra with far fewer computational steps and greater speed than if all possible combinations of reference spectra are considered. | 2015-02-26 |
20150053863 | DETECTION DEVICES AND METHODS - A device for detecting neutrons with gamma discrimination and/or gamma radiation includes a first semiconductor layer, a second semiconductor layer, an electron separator layer between the first semiconductor device and the second semiconductor device, and a gadolinium-containing layer between the first semiconductor layer and the second semiconductor layer. | 2015-02-26 |
20150053864 | ELECTRONIC DEVICE, IN PARTICULAR MOBILE TELEPHONE, FOR DETECTING RADIATION - The invention relates to an electronic device, in particular a mobile telephone ( | 2015-02-26 |
20150053865 | RADIATION IMAGE-PICKUP DEVICE AND RADIATION IMAGE-PICKUP DISPLAY SYSTEM - A radiation image-pickup device includes: a plurality of pixels each configured to generate signal charge based on radiation; and a field effect transistor used to read the signal charge from each of the plurality of pixels, wherein the field effect transistor includes a semiconductor layer including an active layer and a low concentration impurity layer formed to be adjacent to the active layer, and a first and a second gate electrode disposed to face each other with the active layer interposed therebetween, and one or both of the first and the second gate electrodes are provided in a region not facing the low concentration impurity layer. | 2015-02-26 |
20150053866 | Repair Apparatus - There is provided a repair apparatus including a gas field ion source which includes an ion generation section including a sharpened tip, a cooling unit which cools the tip, an ion beam column which forms a focused ion beam by focusing ions of a gas generated in the gas field ion source, a sample stage which moves while a sample to be irradiated with the focused ion beam is placed thereon, a sample chamber which accommodates at least the sample stage therein, and a control unit which repairs a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column. The gas field ion source generates nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions. | 2015-02-26 |
20150053867 | PATTERN FORMATION METHOD, MASK FOR PATTERN FORMATION, METHOD FOR MANUFACTURING MASK, AND PATTERN FORMATION APPARATUS - According to one embodiment, a pattern formation method includes: preparing a mask pattern for interference, a photoelectric conversion unit, and a processing object, the mask pattern for interference being periodically arranged a plurality of light transmissive portions, the photoelectric conversion unit being disposed apart from the mask pattern for interference; applying light to the mask pattern for interference to produce Talbot interference based on transmitted light of the light transmitted through the light transmissive portions; applying interference light produced by the Talbot interference to the photoelectric conversion unit to cause the photoelectric conversion unit to emit electrons based on the interference light; and forming a pattern by applying the electrons to the processing object. | 2015-02-26 |
20150053868 | VISUAL DETECTION OF MERCURY IONS - Composite materials comprising a mesoflower structure, methods of preparing the composite material, and methods of detecting heavy metal ion using the composite material are described herein. In some embodiments, a silica-coated gold mesoflower with a layer of silver quantum clusters may be capable of detecting Hg | 2015-02-26 |
20150053869 | INSPECTION APPARATUS AND INSPECTION METHOD - An inspection apparatus is an apparatus for inspecting a solar cell panel. The inspection apparatus includes: an excitation light irradiation part for irradiating the solar cell panel with pulsed light for causing the solar cell panel to radiate an electromagnetic wave pulse; a detection part for detecting the electromagnetic wave pulse radiated from the solar cell panel in response to irradiation with the pulsed light; and a temperature changing part for changing a temperature of the solar cell panel at a part irradiated with the pulsed light. | 2015-02-26 |
20150053870 | MULTI-FOCI LASER SCANNING MICROSCOPE AND USE OF SAME FOR ANALYZING SAMPLES - A multi-foci laser scanning microscope generates a set of time-multiplexed beams that are simultaneously scanned over multiple scan areas of the sample to be observed. A photodetector array associated with the beams detect fluorescence signals from the sample. A processor processes output signals from the photodetector array based on the time-multiplexing of the beams to provide a much wider field of view and reduced crosstalk between neighboring scan areas for more accurate imaging. | 2015-02-26 |
20150053871 | SYSTEM AND METHOD FOR TIME-RESOLVED FLUORESCENCE IMAGING AND PULSE SHAPING - A time-resolved fluorescence imaging (TRFI) system that images a target medium without lifetime fitting. Instead of extracting the lifetime precisely, the system images the fluorophore distribution to allow for a simple and accurate method to obtain the fluorescence image without lifetime-extraction for time-resolved fluorescence imaging. An illumination source circuit for TRFI is also disclosed that shapes the excitation pulse. In one embodiment, the illumination source comprises an LED and stub line configured for generating a linear decay profile. | 2015-02-26 |
20150053872 | APPARATUS AND METHODS FOR ANALYSING FLUORESCENT PARTICLES - According to an embodiment of the invention, an apparatus to detect fluorescence from a sample is disclosed. The apparatus comprises a sample plane onto which the sample is arranged, an excitation light unit including at least a light source to illuminate the sample, and a detection unit comprising at least a detector having at least 100,000 active detection elements to detect a fluorescence signal from the sample. | 2015-02-26 |
20150053873 | AIR DEFLECTORS FOR HEAT MANAGEMENT IN A LIGHTING MODULE - A lighting module has an array of light-emitting elements that is electrically coupled to a heat sink and a housing having a heat exit. The array of light-emitting elements is positioned in the housing and the heat sink is positioned to dissipate heat generated within the housing so that the heat is expelled through the heat exit. A deflector is secured to the housing and is positioned to extend over some portion of the heat exit. The deflector guides heat away from the housing in a direction. In some configurations, the deflector guides heat away from the housing in a direction that is opposite the direction in which the array of light-emitting elements emit light. Also, some lighting modules have multiple heat exits and may have multiple deflectors extending over a portion of the respective heat exits. | 2015-02-26 |
20150053874 | PISTON-FORMAT WORKING-FLUID-PRESSURE ACTUATOR AND CONTROL VALVE - [Problem] To provide a piston-format working-fluid-pressure actuator capable of commonly using components when the piston-format working-fluid-pressure actuator is used for a reverse action or a normal action and decreasing a length dimension, in the forward/backward movement direction of the output shaft and to provide a control valve using the piston-format working-fluid-pressure actuator and a valve member. | 2015-02-26 |
20150053875 | CLOSURE ELEMENT FOR A VALVE DEVICE AND VALVE DEVICE - A closure element for a valve device for fluids and an valve device for fluids is described. The closure element includes a membrane and a valve device protruding from the membrane. The valve device has an outer diameter return which is configured so that the closure element can be locked by means of locking slide which can be moved toward the outer diameter return substantially orthogonally to a feed axis. | 2015-02-26 |
20150053876 | VALVE, IN PARTICULAR GLUE VALVE - The valve, in particular glue valve, consists of a valve housing ( | 2015-02-26 |
20150053877 | BRAKE HYDRAULIC DEVICE FOR VEHICLE - Provided is a brake hydraulic device for a vehicle, including: a base body having a hydraulic pressure path for brake fluid formed therein; an electromagnetic valve which opens and closes the hydraulic pressure path; an electromagnetic coil which drives the electromagnetic valve; and a housing attached to the outer surface of the base body and having a housing chamber for accommodating the electromagnetic valve and the electromagnetic coil. The housing includes a peripheral wall part having openings formed on a front side and a rear side thereof, and an intermediate wall part partitioning a space inside the peripheral wall part into a front side and a rear side. The housing chamber is provided on the rear side of the intermediate wall part, and recessed portions and a projecting portion is formed on a front surface of the intermediate wall part. | 2015-02-26 |
20150053878 | JOINT LINKAGE ACTUATING MEANS FOR A VALVE - The present invention concerns a control valve comprising: —A passage path for a fluid inside the valve and that puts in communication an inlet with an outlet; —An obstruction element arranged as to result mobile between a closing position, in which it obstructs the path impeding the passage of the fluid from the inlet towards the outlet, and an opening position in which it allows said passage, and; —Movement means for operating the movement of the obstruction element between said opening position and said closing position and vice-versa. In accordance with the invention, the movement means comprise a joint linkage. | 2015-02-26 |
20150053879 | AUTOMATIC BALANCING BALL VALVE - An automatic balancing valve is described provided with a valve body having at least one inlet channel and an outlet channel for a heat transfer fluid, wherein the flow regulation is carried out by a ball shutter having an axial through channel with axis perpendicular to the rotation axis of the ball. The ball valve has at least one radial channel aligned with the rotation axis of the ball and is connected to the axial through channel. The radial channel has an outlet port having a circular cross-section which hydraulically connects the axial through channel of the ball with the outlet channel of the valve. | 2015-02-26 |
20150053880 | HIGH TEMPERATURE SEALS FOR USE IN ROTARY VALVES - High temperature seals for use in rotary valves are described herein. An example seal for use with a rotary valve includes a primary seal to engage a flow control member when the primary seal is in a first condition and a secondary seal at least partially disposed within the primary seal. The primary seal is to prevent the secondary seal from engaging the flow control member when the primary seal is in the first condition and the secondary seal is to engage the flow control member when the primary seal is in a second condition. | 2015-02-26 |
20150053881 | SPLIT VALVE - A split valve includes: an upper valve body having a spherical surface abutting on a seat surface of a discharge port to block the discharge port and a hollow on a lower surface; a lower valve body that blocks a receiving port by causing a spherical surface to abut on a seat surface of a receiving port and has a protrusion fitted to the hollow of the upper valve body on its upper surface, a shaft that rotates the lower valve body, an air supply/discharge mechanism that supplies/discharges an air pressure into/from a chamber defined by the protrusion and the hollow. | 2015-02-26 |
20150053882 | ELECTROLYTIC SOLUTION FOR ALUMINUM ELECTROLYTIC CAPACITOR, AND ALUMINUM ELECTROLYTIC CAPACITOR USING SAME - In order to render an electrolytic solution not leak from a sealed part even at a higher temperature of the environment or in a high-humidity condition to enhance the reliability of an electrolytic capacitor, an electrolytic solution for an aluminum electrolytic capacitor is described. The electrolytic solution includes an aprotic solvent (A), an electrolyte (D) containing a salt composed of a cation (B) represented by formula (1) and an anion (C), and a compound (E) represented by formula (2) and having a content of 0.01 to 3 wt % relative to the total weight of (A) and (D): | 2015-02-26 |
20150053883 | SINTERED FERRITE MAGNET AND MOTOR PROVIDED THEREWITH - Provided is a sintered ferrite magnet | 2015-02-26 |
20150053884 | PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, AND ELECTRONIC APPARATUS - The present invention provides a lead-free piezoelectric material having a high piezoelectric constant and a high mechanical quality factor in a wide operating temperature range. The piezoelectric material includes a perovskite-type metal oxide represented by Formula (1): | 2015-02-26 |
20150053885 | PIEZOELECTRIC CERAMIC, METHOD FOR MANUFACTURING PIEZOELECTRIC CERAMIC, PIEZOELECTRIC ELEMENT, AND ELECTRONIC DEVICE - A piezoelectric ceramic contains a main component, Mn as a first auxiliary component, and a second auxiliary component containing at least one element selected from the group consisting of Cu, B, and Si. The main component contains a perovskite metal oxide having the following general formula (1): | 2015-02-26 |
20150053886 | Compositions Including Magnetic Materials - Compositions including hard magnetic photoresists, soft photoresists, hard magnetic elastomers and soft magnetic elastomers are provided. | 2015-02-26 |
20150053887 | POLISHING COMPOSITION - The polishing composition of the present invention is a polishing composition for polishing a tungsten-containing metal layer formed on an insulating layer, the polishing composition comprising: abrasive grains; one or more halogen acids selected from the group consisting of iodic acid, iodous acid, and hypoiodous acid; a strong acid; a hydrogen-ion-supplying agent; and water. | 2015-02-26 |
20150053888 | ETCHING LIQUID COMPOSITION AND ETCHING METHOD - The etching liquid composition of the present invention contains a ferric ion component; a hydrogen chloride component; and a component that is at least one type of compound selected from the group consisting of a compound represented by general formula (1) below and a straight chain or branched chain alcohol having 1 to 4 carbon atoms: | 2015-02-26 |
20150053889 | High-Power and High-Energy-Density Lithium Compound Solid-State Cathode - A solid-state (non-organic) high-power and high-energy-density cathode that is mechanically, thermally, and ionically robust. | 2015-02-26 |
20150053890 | METHOD OF PREPARING CATHODE ACTIVE MATERIAL PRECURSOR FOR LITHIUM RECHARGEABLE BATTERY, CATHODE ACTIVE MATERIAL PRECURSOR FOR LITHIUM RECHARGEABLE BATTERY PREPARED THEREBY, AND CATHODE ACTIVE MATERIAL FORMED USING THE CATHODE ACTIVE MATERIAL PRECURSOR - The present invention relates to a method of preparing a cathode active material precursor for a lithium rechargeable battery, the cathode active material precursor for the lithium rechargeable battery prepared thereby, and a cathode active material formed using the cathode active material precursor. | 2015-02-26 |
20150053891 | FLUOROBIPHENYL-CONTAINING COMPOSITION - A composition contains three or more compounds represented by general formula (i) below. | 2015-02-26 |
20150053892 | CHARGE-TRANSPORTING VARNISH - A charge-transporting thin film having excellent flatness can be obtained with good repeatability using the charge-transporting varnish of the present invention, which contains: a charge transportation substance comprising a charge-transporting monomer or a charge-transporting oligomer or polymer having a number-average molecular weight of 200-50,000, or a charge transporting material comprising the charge transportation substance and a dopant substance; and a mixed solvent including at least one type of good solvent and at least one type of poor solvent; the absolute value of the boiling point difference ΔT° C. of the good solvent and the poor solvent satisfying the relation |ΔT|<20° C.; the viscosity at 25° C. being 7.5 mPa·s or less; the surface tension at 23° C. being 30.0-40.0 mN/m; and the charge-transporting material being dissolved or uniformly dispersed in the mixed solvent. | 2015-02-26 |
20150053893 | Method for Preparing Conductive Polymer Solution and Conductive Polymer Film - The present invention relates to a method for preparing a conductive polymer solution and a conductive polymer film, which may increase the doping ratio of a conductive polymer solution and remove ions which have not been removed after the reaction in the conductive polymer solution, unreacted monomers, unreacted oligomers, and polymer electrolytes in excess, through a simple process, and may increase the electrical conductivity of a film prepared by using the conductive polymer through this. | 2015-02-26 |
20150053894 | Charge-transporting Molecular Glass Mixtures, Luminescent Molecular Glass Mixtures, or Combinations Thereof for Organic Light Emitting Diodes and other Organic Electronics and Photonics Applications - The present invention provides charge transporting molecular glass mixtures, luminescent molecular glass mixtures, or combinations thereof comprising at least two nonpolymeric compounds each independently corresponding to the structure (R | 2015-02-26 |
20150053895 | Photosensitive And Heat-Resistant Material, Method For Producing Same And Use Thereof - This tin-based material comprises:
| 2015-02-26 |
20150053896 | THERMALLY HEALABLE AND RESHAPABLE CONDUCTIVE HYDROGEL COMPOSITE - An electro-conductive hydrogel composite material that may be suitable as an artificial skin satisfies all four requirements of artificial skin, namely, flexibility, electrical conductivity, healing property, and biocompatibility. The electro-conductive hydrogel composite material includes a hydrogel composition including water and a cross-linkable polymer which reversibly forms cross-linkage by hydrogen bonding; and an electro-conductive material dispersed in the hydrogen bond-based hydrogel. | 2015-02-26 |
20150053897 | Formation of Nanoparticles of Antimonides Starting from Antimony Trihydride as a Source of Antimony - The present invention relates to a process for preparing nanoparticles of antimonides of metal element(s) in the form of a colloidal solution, using antimony trihydride (SbH | 2015-02-26 |
20150053898 | COMPOSITE OXIDE POWDER FOR SOLID OXIDE FUEL CELL AND ITS PRODUCTION METHOD - To provide a composite oxide powder for a solid oxide fuel cell containing lanthanum, strontium and/or calcium, manganese and oxygen and having a highly uniform composition, and its production method. | 2015-02-26 |
20150053899 | NEW THERMOELECTRIC CONVERSION MATERIAL AND PRODUCING METHOD THEREOF, AND THERMOELECTRIC CONVERSION ELEMENT USING THE SAME - Thermoelectric conversion materials, expressed by the following formula: Bi | 2015-02-26 |
20150053900 | Photosensitive Resin Composition for Color Filter, and Color Filter Prepared Using the Same - The present invention relates to a phthalocyanine compound represented by Formula 1, a dye including the same, a photosensitive resin composition including the same, and a color filter prepared using the same. In Formula 1, 1 to 8 of Z | 2015-02-26 |
20150053901 | FLUORINE-CONTAINING PHOSPHATE ESTER-AMIDE, AND FLAME RETARDANT RESIN, FLAME RETARDANT LIQUID AND FLAME RETARDANT SOLVENT FOR ORGANIC SYNTHESIS CONTAINING SAME - [Problem] To provide a fluorine-containing phosphate ester-amide which has high flame retardancy such as exhibiting flame retardant effects at a small quantity of addition, and sufficient hydrolysis resistance. | 2015-02-26 |
20150053902 | PACKAGING OF RADIOACTIVE WASTE BY CEMENTING - Using crystalline silica, mixed with cement powder, to reduce the heating of the cement paste caused by the hydration of said powder, during a process of packaging of radioactive waste, a formulation for the packaging of radioactive waste by cementing, which comprises such silica, a method for packaging radioactive waste implementing this formulation, and a package for packaging of radioactive waste which is obtained by this method. | 2015-02-26 |
20150053903 | BALANCER - The invention relates to a balancer ( | 2015-02-26 |
20150053904 | LOCKING EXTENSION DEVICE - The invention relates to an extension device, lifting device or jack that can be locked in a raised configuration and used to safely support a raised load. An extension device according to the invention comprises a housing having a closed first end and an open second end, a support member inside the housing projecting from the first end thereof, a piston slideably mounted in the housing around the support member, means for extending the piston out of the second end of the housing, means for retracting the piston into the housing, and a locking mechanism for releasably locking the piston to the support member, wherein the locking mechanism comprises one or more locking members mounted on the support member operable to be selectively moved in and out of locking engagement with the piston. | 2015-02-26 |
20150053905 | POST CAPS - A post cap assembly for covering an upper end of a post is provided. The post cap assembly may include a post cap body having an internal post cavity that is sized and shaped to receive the upper end of the post and having a topper receiving aperture extending at least partially through the post cap body. An interchangeable topper may be positioned within the topper receiving aperture and projecting from the top side of the post cap body. Other post caps and related systems and methods are also provided. | 2015-02-26 |
20150053906 | ELECTRIC FENCE AND ASSEMBLY THEREWITH - An electric fence for deterring animals from an area with one or more supplies of feed and at least one separate feed processing machine, wherein the fence comprises an electrically conductive member, an electric power supply connected to said member for energizing the member and arranged to provide an electric shock to an object coming into contact with said member. A controller is operatively connected to the fence, wherein the controller is arranged to measure a value of an electrical parameter of the fence, and to automatically adjust the operating state of the machine within the area when the measured parameter value fulfils a predetermined criterion. | 2015-02-26 |
20150053907 | METHODS, APPARATUSES, AND CIRCUITS FOR PROGRAMMING A MEMORY DEVICE - Subject matter described pertains to methods, apparatuses, and circuits for programming a memory device. | 2015-02-26 |
20150053908 | MEMRISTIVE DEVICE AND METHOD OF MANUFACTURE - A device with programmable resistance comprising memristive material between conductive electrodes on a substrate or in a film stack on a substrate is provided. During fabrication of a memristive device, a memristive layer may be hydrated after deposition of the memristive layer. The hydration of the memristive layer may be performed utilizing thermal annealing in a reducing ambient, implant or plasma treatment in a reducing ambient, or a deionized water rinse. Additionally, plasma-assisted etching of an electrode may be performed with hydration or in place of hydration to electroform devices in a batch, in situ process. The memristive device may be electroformed at low voltage and passivated to allow for device operation in air. Further, the memristive device is suitable for high throughput manufacturing. | 2015-02-26 |
20150053909 | NONLINEAR MEMRISTORS - A nonlinear memristor includes a bottom electrode, a top electrode, and an insulator layer between the bottom electrode and the top electrode. The insulator layer comprises a metal oxide. The nonlinear memristor further includes a switching channel within the insulator layer, extending from the bottom electrode toward the top electrode, and a nano-cap layer of a metal-insulator-transition material between the switching channel and the top electrode. The top electrode comprises the same metal as the metal in the metal-insulator-transition material. | 2015-02-26 |
20150053910 | Multistate Nonvolatile Memory Elements - Multistate nonvolatile memory elements are provided. The multistate nonvolatile memory elements contain multiple layers. Each layer may be based on a different bistable material. The bistable materials may be resistive switching materials such as resistive switching metal oxides. Optional conductor layers and current steering elements may be connected in series with the bistable resistive switching metal oxide layers. | 2015-02-26 |
20150053911 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device according to one embodiment of the present invention includes a dielectric film configured to store information depending on presence or absence of a conductive path therein, and a plurality of electrodes provided to contact a first surface of the dielectric film. The conductive path can be formed between two electrodes arbitrarily selected form the plurality of electrodes. The conductive path has a rectifying property of allowing a current to flow more easily in a first direction connecting arbitrary two electrodes than in a second direction opposite to the first direction. The largest possible number of the conductive paths that may be formed is larger than the number of the plurality of electrodes. | 2015-02-26 |
20150053912 | Integrate Circuit With Nanowires - The present disclosure provides an integrated circuit (IC). The IC includes a substrate having a metal-oxide-semiconductor (MOS) region. The IC further includes first gate, source and drain regions, having a first length, and second gate, source and drain regions, having a second length. A first nanowire set is disposed in the first gate region, the first nanowire set including a nanowire having a first diameter and connecting to a feature in the first source region and a feature in the first drain region. A second nanowire set is disposed in the second gate region, the second nanowire set including a nanowire having a second diameter and connecting to a feature in the second source region and a feature in the second drain region. The diameters are such that if the first length is greater than the second length, the first diameter is less than the second diameter, and vice versa. | 2015-02-26 |
20150053913 | SUSPENDED NANOWIRE STRUCTURE - A mandrel having vertical planar surfaces is formed on a single crystalline semiconductor layer. An epitaxial semiconductor layer is formed on the single crystalline semiconductor layer by selective epitaxy. A first spacer is formed around an upper portion of the mandrel. The epitaxial semiconductor layer is vertically recessed employing the first spacers as an etch mask. A second spacer is formed on sidewalls of the first spacer and vertical portions of the epitaxial semiconductor layer. Horizontal bottom portions of the epitaxial semiconductor layer are etched from underneath the vertical portions of the epitaxial semiconductor layer to form a suspended ring-shaped semiconductor fin that is attached to the mandrel. A center portion of the mandrel is etched employing a patterned mask layer that covers two end portions of the mandrel. A suspended semiconductor fin is provided, which is suspended by a pair of support structures. | 2015-02-26 |
20150053914 | SEMICONDUCTOR STRUCTURE WITH INSULATOR COATING - Semiconductor structures having insulators coatings and methods of fabricating semiconductor structures having insulators coatings are described. In an example, a method of coating a semiconductor structure involves adding a silicon-containing silica precursor species to a solution of nanocrystals. The method also involves, subsequently, forming a silica-based insulator layer on the nanocrystals from a reaction involving the silicon-containing silica precursor species. The method also involves adding additional amounts of the silicon-containing silica precursor species after initial forming of the silica-based insulator layer while continuing to form the silica-based insulator layer to finally encapsulate each of the nanocrystals. | 2015-02-26 |
20150053915 | Light Emitting Diode - A light emitting diode includes a substrate, a first semiconductor layer, a luminous layer, a second semiconductor layer, a current diffusion layer, a third semiconductor layer, a first electrode, a second electrode, and an insulation layer. The first semiconductor layer is formed above the substrate. The luminous layer is formed on the first semiconductor layer, and exposes a portion of the first semiconductor layer. The second semiconductor layer is formed on the luminous layer. The current diffusion layer is formed on the second semiconductor layer. The third semiconductor layer is formed on the current diffusion layer. The first electrode is formed on the first semiconductor layer. The second electrode includes a base portion formed on the surface of the substrate, and plural comb structures extending upward vertically. Each tip of the comb structure is in the third semiconductor layer. The insulation layer exposes the tip of each comb structure. | 2015-02-26 |
20150053916 | Gas Phase Enhancement of Emission Color Quality in Solid State LEDs - Light-emitting materials are made from a porous light-emitting semiconductor having quantum dots (QDs) disposed within the pores. According to some embodiments, the QDs have diameters that are essentially equal in size to the width of the pores. The QDs are formed in the pores by exposing the porous semiconductor to gaseous QD precursor compounds, which react within the pores to yield QDs. According to certain embodiments, the pore size limits the size of the QDs produced by the gas-phase reactions. The QDs absorb light emitted by the light-emitting semiconductor material and reemit light at a longer wavelength than the absorbed light, thereby “down-converting” light from the semiconductor material. | 2015-02-26 |
20150053917 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device is provided which has improved light emission efficiency. The semiconductor light emitting device includes an active layer having a quantum well structure. The quantum well structure includes well and barrier layers that are alternately and repeatedly deposited on one another. The well layer is formed of a gallium nitride group semiconductor that contains In. The well layer has a profile of composition ratio of In that includes a first portion, and a second portion that is in contact with the first portion. The concentration of In in the first portion is substantially fixed or reduced along the thickness direction of the well layer from the negative side to the positive side of the piezoelectric field that is produced in the well layer. The concentration of In in the second portion is sharply reduced with respect to the first portion. | 2015-02-26 |
20150053918 | LIGHT-EMITTING DIODE WITH CURRENT-SPREADING REGION - A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed in the upper LED layer such that current passing between an electrode contacting the upper LED layer flows around the current blocking layer. When the current blocking layer is positioned between the electrode and the light-emitting layer, the light emitted by the light-emitting layer is not blocked by the electrode and the light efficiency is increased. The current blocking layer may be formed by converting a portion of the upper LED layer into a resistive region. In an embodiment, ions such as magnesium, carbon, or silicon are implanted into the upper LED layer to form the current blocking layer. | 2015-02-26 |
20150053919 | OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP - An optoelectronic semiconductor chip having a semiconductor layer sequence includes at least one active layer that generates primary radiation; a plurality of conversion layers that at least partially absorb the primary radiation and convert the primary radiation into secondary radiation of a longer wavelength than the primary radiation; and a roughened portion that extends at least into one of the conversion layers, wherein the roughened portion has a random structure, the semiconductor layer sequence is arranged on a carrier, a top side of the semiconductor layer sequence facing away from the carrier is formed by the roughened portion, the at least one active layer is located between the carrier and the conversion layers, and the roughened portion includes a plurality of recesses free of a semiconductor material. | 2015-02-26 |
20150053920 | LED with Current Spreading Layer and Fabrication Method - A lighting emitting diode including: an n side layer and a p side layer formed by nitride semiconductors respectively; an active layer comprising a nitride semiconductor is between the n side layer and the p side layer; wherein, the n-side layer is successively laminated by an extrinsically-doped buffer layer and a compound multi-current spreading layer; the compound multi-current spreading layer is successively-laminated by a first current spreading layer, a second current spreading layer and a third current spreading layer; the first current spreading layer and the third current spreading layer are alternatively-laminated layers comprising a u-type nitride semiconductor layer and an n-type nitride semiconductor layer; the second current spreading layer is a distributed insulation layer formed on the n-type nitride semiconductor layer; and the first current spreading layer is adjacent to the extrinsically-doped buffer layer; and the third current spreading layer is adjacent to the active layer. | 2015-02-26 |
20150053921 | ENHANCED SWITCH DEVICE AND MANUFACTURING METHOD THEREFOR - An enhanced switch device and a manufacturing method therefor. The method comprises: providing a substrate, and forming a nitride transistor structure on the substrate; fabricating and forming a dielectric layer on the nitride transistor structure, on which a gate region is defined; forming a groove structure on the gate region; depositing a p-type semiconductor material in the groove; removing the p-type semiconductor material outside the gate region on the dielectric layer; etching the dielectric layer in another position than the gate region on the dielectric layer to form two ohmic contact regions; and forming a source electrode and a drain electrode on the two ohmic contact regions, respectively. | 2015-02-26 |
20150053922 | PHOTODETECTOR - A photodetector | 2015-02-26 |
20150053923 | BACK SIDE ILLUMINATION PHOTODIODE OF HIGH QUANTUM EFFICIENCY - A back side illumination photodiode includes a light-receiving back side surface of a semiconductor material substrate. An area of the light-receiving back side surface includes a recess. The recess is filled with a material having an optical index that is lower than an optical index of the semiconductor material substrate. Both the substrate and the filling material are transparent to an operating wavelength of the photodiode. The recess may be formed to have a ring shape. | 2015-02-26 |
20150053924 | SPAD PHOTODIODE OF HIGH QUANTUM EFFICIENCY - A SPAD-type photodiode has a semiconductor substrate with a light-receiving surface. A lattice formed of interlaced strips made of a first material covers the light receiving surface. The lattice includes lattice openings with lateral walls covered by a spacer made of a second material. Then first and second materials have different optical indices, and further each optical index is less than or equal to the substrate optical index. A pitch of the lattice is of the order of a magnitude of an operating wavelength of the photodiode. The first and second materials are transparent at that operating wavelength. The lattice is made of a conductive material electrically coupled to an electrical connection node (for example, a bias voltage node). | 2015-02-26 |
20150053925 | Top-Down Fabrication Method for Forming a Nanowire Transistor Device - The present disclosure relates to a top-down method of forming a nanowire structure extending between source and drain regions of a nanowire transistor device, and an associated apparatus. In some embodiments, the method provides a substrate having a device layer disposed over a first dielectric layer. The device layer has a source region and a drain region separated by a device material. The first dielectric layer has an embedded gate structure abutting the device layer. One or more masking layers are selectively formed over the device layer to define a nanowire structure. The device layer is then selectively etched according to the one or more masking layers to form a nanowire structure at a position between the source region and the drain region. By forming the nanowire structure through a masking and etch process, the nanowire structure is automatically connected to the source and drain regions. | 2015-02-26 |
20150053926 | GRAPHITE AND/OR GRAPHENE SEMICONDUCTOR DEVICES - Various embodiments are provided for graphite and/or graphene based semiconductor devices. In one embodiment, a semiconductor device includes a semiconductor layer and a semimetal stack. In another embodiment, the semiconductor device includes a semiconductor layer and a zero gap semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the semiconductor layer, which forms a Schottky barrier. In another embodiment, a semiconductor device includes first and second semiconductor layers and a semimetal stack. In another embodiment, a semiconductor device includes first and second semiconductor layers and a zero gap semiconductor layer. The first semiconductor layer includes a first semiconducting material and the second semi conductor layer includes a second semiconducting material formed on the first semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the second semiconductor layer, which forms a Schottky barrier. | 2015-02-26 |
20150053927 | STRETCHABLE TRANSISTORS WITH BUCKLED CARBON NANOTUBE FILMS AS CONDUCTING CHANNELS - Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors. The transistors, which are highly stretchable and bendable, exhibit stable performance even when operated under high tensile strains. | 2015-02-26 |
20150053928 | SILICON AND SILICON GERMANIUM NANOWIRE FORMATION - Among other things, one or semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. For example, one or more silicon and silicon germanium stacks are utilized to form PMOS transistors comprising germanium nanowire channels and NMOS transistors comprising silicon nanowire channels. In an example, a first silicon and silicon germanium stack is oxidized to transform silicon to silicon oxide regions, which are removed to form germanium nanowire channels for PMOS transistors. In another example, silicon and germanium layers within a second silicon and silicon germanium stack are removed to form silicon nanowire channels for NMOS transistors. PMOS transistors having germanium nanowire channels and NMOS transistors having silicon nanowire channels are formed as part of a single fabrication process. | 2015-02-26 |
20150053929 | VERTICAL III-V NANOWIRE FIELD-EFFECT TRANSISTOR USING NANOSPHERE LITHOGRAPHY - A vertical III-V nanowire Field-Effect Transistor (FET). The FET includes multiple nanowires or nanopillars directly connected to a drain contact, where each of the nanopillars includes a channel of undoped III-V semiconductor material. The FET further includes a gate dielectric layer surrounding the plurality of nanopillars and a gate contact disposed on a gate metal which is connected to the gate dielectric layer. Additionally, the FET includes a substrate of doped III-V semiconductor material connected to the nanopillars via a layer of doped III-V semiconductor material. In addition, the FET contains a source contact directly connected to the bottom of the substrate. By having such a structure, electrostatic control and integration density is improved. Furthermore, by using III-V materials as opposed to silicon, the current drive capacity is improved. Additionally, the FET is fabricated using nanosphere lithography which is less costly than the conventional photo lithography process. | 2015-02-26 |
20150053930 | ATOMIC LAYER DEPOSITION OF SELECTED MOLECULAR CLUSTERS - Energy bands of a thin film containing molecular clusters are tuned by controlling the size and the charge of the clusters during thin film deposition. Using atomic layer deposition, an ionic cluster film is formed in the gate region of a nanometer-scale transistor to adjust the threshold voltage, and a neutral cluster film is formed in the source and drain regions to adjust contact resistance. A work function semiconductor material such as a silver bromide or a lanthanum oxide is deposited so as to include clusters of different sizes such as dimers, trimers, and tetramers, formed from isolated monomers. A type of Atomic Layer Deposition system is used to deposit on semiconductor wafers molecular clusters to form thin film junctions having selected energy gaps. A beam of ions contains different ionic clusters which are then selected for deposition by passing the beam through a filter in which different apertures select clusters based on size and orientation. | 2015-02-26 |
20150053931 | THIN-FILM TRANSISTOR ARRAY SUBSTRATE, DISPLAY APPARATUS INCLUDING SAME, AND METHOD OF MANUFACTURING THIN-FILM TRANSISTOR ARRAY SUBSTRATE - A thin-film transistor (TFT) array substrate includes: a TFT including an active layer, a gate electrode, a source electrode, and a drain electrode; a first conductive layer disposed in a same layer as one of the active layer, the gate electrode, the source electrode, and the drain electrode; a second conductive layer disposed in a different layer from the first conductive layer; a node contact hole including a first contact hole part which exposes the first conductive layer, a second contact hole part which exposes the second conductive layer, and a connection part which connects the first contact hole part and the second contact hole part and has a width smaller than that of the first contact hole part and that of the second contact hole part; and a connection node disposed in the node contact hole to electrically connect the first and second conductive layers. | 2015-02-26 |
20150053932 | ORGANIC LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode (OLED) package includes a substrate, an OLED die mounted on the substrate and an encapsulation layer encapsulating the OLED die. The OLED package further includes a protecting layer formed on the OLED die. The encapsulation layer has a multi-layered structure and is deposited on the protecting layer. Refractive indexes of a cathode of the OLED die, the protecting layer and the encapsulation layer are gradually decreased in the sequence. A barrier layer for blocking moisture from entering the OLED package is formed on a bottom surface of the substrate by atomic layer deposition (ALD) method. The present disclosure also provides a method for manufacturing the OLED package. | 2015-02-26 |
20150053933 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; an emission layer (EML) between the first electrode and the second electrode; a hole transport region between the first electrode and the EML; an electron transport layer (ETL) between the EML and the second electrode, and including a first electron transport material; a first buffer layer between the EML and the ETL, and including a first buffer material; and a second buffer layer between the first buffer layer and the ETL, and including a second buffer material and a second electron transport material, wherein the first buffer material and the second buffer material are each independently selected from compounds represented by Formula 1 below, and the first buffer layer does not include an electron transport material: | 2015-02-26 |
20150053934 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT- EMITTING DEVICE COMPRISING THE SAME - A heterocyclic compound represented by Formula 1 and an organic light-emitting device including the same. | 2015-02-26 |
20150053935 | Organic Light-Emitting Diode Displays With Semiconducting-Oxide and Silicon Thin-Film Transistors - An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure. | 2015-02-26 |
20150053936 | ORGANIC ELECTRIC LIGHT EMITTING ELEMENT, MATERIAL FOR SAID ELEMENT, AND LIGHT EMITTING DEVICE, DISPLAY DEVICE, AND ILLUMINATION DEVICE EMPLOYING SAID ELEMENT - An organic electroluminescent element including a substrate, a pair of electrodes including an anode and a cathode, disposed on the substrate, and at least one organic layer including a light emitting layer, disposed between the electrodes, in which the organic layer includes a compound represented by the following general formula (1), has high luminous efficiency, excellent blue color purity, and a small change in the chromaticity due to deterioration by driving, wherein Cy, Dn | 2015-02-26 |
20150053937 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes an emission layer and any one of a hole injection layer, a hole transport layer, or a functional layer having hole injection and hole transport abilities, wherein the emission layer includes an organic metal complex represented by Formula 1 herein, and wherein the hole injection layer, the hole transport layer, or the functional layer having hole injection and hole transport abilities includes a compound represented by Formula 2 or 3 herein. | 2015-02-26 |
20150053938 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - A composition formed of a first mixture of a first compound and a second compound wherein the first compound has different chemical structure than the second compound; the first compound is capable of functioning as a hole transporting material in an organic light emitting device at room temperature; the first compound comprises at least one carbazole group; the first compound has a evaporation temperature T1 of 150 to 350° C.; the second compound has evaporation temperature T2 of 150 to 350° C.; the absolute value of T1−T2 is less than 20° C.; the first compound having a concentration C1 in said first mixture, and the first compound having a concentration C2 in a film formed by evaporating the first mixture in a vacuum deposition tool at a constant pressure between 1×10 | 2015-02-26 |
20150053939 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - A composition formed of a mixture of two compounds having similar thermal evaporation properties that are pre-mixed into an evaporation source that can be used to co-evaporate the two compounds into an emission layer in OLEDs via vacuum thermal evaporation process is disclosed. | 2015-02-26 |
20150053940 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DIODE INCLUDING THE SAME - A heterocyclic compound and an organic light-emitting diode including the same, the heterocyclic compound being represented by Formula 1 below: | 2015-02-26 |
20150053941 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A heterocyclic compound and an organic light-emitting diode including the same, the heterocyclic compound being represented by Formula 1, below: | 2015-02-26 |
20150053942 | ORGANIC LIGHT-EMITTING DEVICE - Provided is an organic light-emitting device, including a first electrode; a second electrode facing the first electrode; an emission layer disposed between the first electrode and the second electrode; a first hole transport layer that is disposed between the emission layer and the first electrode and includes a first compound and a first charge-generation material; a second hole transport layer that is disposed between the emission layer and the first hole transport layer and includes a second compound; a third hole transport layer that is disposed between the emission layer and the second hole transport layer and includes a third compound and a second charge-generation material; and a fourth hole transport layer that is disposed between the emission layer and the third hole transport layer and includes a fourth compound. The first, second, third, and fourth compounds are each represented by Formula 1 or 2: | 2015-02-26 |
20150053943 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode device includes a display panel; a polarizing plate on the display panel; a first pressure adhesive layer between the display panel and the polarizing plate; a touch panel on the polarizing plate; a second pressure adhesive layer between the polarizing plate and the touch panel; a window on the touch panel; and a third pressure adhesive layer between the touch panel and the window. | 2015-02-26 |
20150053944 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device includes a first electrode; a second electrode opposite to the first electrode; and an organic layer between the first electrode and the second electrode, and the organic layer including an emission layer that includes at least one silane-based compound represented by Formula 1 below and at least one anthracene-based compound represented by Formula 20 below. | 2015-02-26 |
20150053945 | ANTHRACENE-BASED COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE COMPRISING THE SAME - An anthracene-based compound is provided as represented by Formula 1: | 2015-02-26 |
20150053946 | ANTHRACENE-BASED COMPOUNDS AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - An anthracene-based compound is provided represented by Formula 1: | 2015-02-26 |
20150053947 | LIGHT EMITTING DIODE PIXEL UNIT CIRCUIT AND DISPLAY PANEL - A LED pixel unit circuit and a display panel. The circuit comprises a driving module ( | 2015-02-26 |
20150053948 | ORGANIC EL PANEL AND METHOD FOR MANUFACTURING SAME - An organic EL panel including an organic light-emitting layer with a miniaturized structure formed by a wet process, allowing for excellent light-emitting characteristics, and a method for manufacturing the same. Specifically, the display panel includes: a substrate; first electrodes arranged above the substrate along a first and second direction intersecting with each other; a first, second, and third organic light-emitting layer arranged above the first electrodes so as to be adjacent to each other in the second direction, and each containing an organic light-emitting material corresponding to a different emission color; a first bank separating the first and the second layer; a second bank separating the second and the third layer; and a second electrode disposed above the first, the second, and the third layer and being different in polarity from the first electrodes. The first and the second bank are different in width along the second direction. | 2015-02-26 |
20150053949 | ORGANIC ELECTROLUMINESCENT ELEMENT - The organic electroluminescent element prevents degradation of phosphorescent luminescent organic metal complexes in a light emitting layer, has a long life, and has superior color stability during continuously drive. The organic electroluminescent element has a blue light emitting layer with a phosphorescent light emitting organometallic complex (A) with a local maximum phosphorescent light emission wavelength on the short wave side of 480 nm or less, a phosphorescent light emitting organometallic complex (B), and a host compound. The content of complex (A) is greater than the content of the complex (B). The complex (A) and the host are such that a single layer made from complex (A) and the host compound, the value for the ratio ((D)/(C)) of the percent of remaining luminescence (C) which UV irradiation with a wavelength of 365 nm and the percent of remaining luminescence (D) with UV irradiation by a HgXe light source is 0.75-0.95. | 2015-02-26 |
20150053950 | METHOD FOR MANUFACTURING TRANSPARENT ELECTRODE, TRANSPARENT ELECTRODE, AND ORGANIC ELECTRONIC DEVICE - A method for forming a transparent electrode includes a step of forming a thin metal wire on a transparent substrate; and a step of forming a transparent conductive layer on the transparent substrate and the thin metal wire. The step of forming the transparent conductive layer is a step of forming the transparent conductive layer by applying an application liquid onto the transparent substrate and the thin metal wire by printing. The application liquid is composed of a conductive polymer, a water-soluble binder having a structural unit represented by the following general formula (I), a polar solvent having a log P value of −1.50 to −0.45, and 5.0 to 25 mass % of a glycol ether. | 2015-02-26 |
20150053951 | ORGANIC LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING AN ORGANIC LIGHT-EMITTING DEVICE - The invention relates to an organic light-emitting part having a functional layer stack ( | 2015-02-26 |
20150053952 | PRODUCTION METHOD FOR JOINED BODY, AND JOINED BODY - A method for manufacturing a joined body composed of a first substrate and a second substrate joined together by sealing resin material attached to a predetermined area of the first substrate includes: attaching a sheet material to the first substrate so as to cover the predetermined area, the sheet material including a sheet base material and the resin material provided on one main surface of the sheet base material; forming, after the attaching, in the sheet material, a slit by reducing a thickness of the resin material along an outline of the predetermined area; and separating, after the forming, part of the resin material inside the slit from the sheet base material to keep the part of the resin material inside the slit on the predetermined area of the first substrate and not to keep the rest of the resin material outside the slit on the first substrate. | 2015-02-26 |
20150053953 | DISPLAY DEVICE - A display device including pixels, in which each of the pixels includes: a positive power supply line and a negative power supply line; a drive transistor that drives a current in a current path according to a gate-source voltage; an organic EL element including an anode and a cathode that are disposed in the current path; an electrostatic storage capacitor that stores the gate-source voltage by having a first electrode connected to a gate of the drive transistor, and a second electrode connected to a source of the drive transistor; a switch transistor that switches a conduction state between the second electrode and a data line; and a switch transistor for applying a negative power supply line voltage to the first electrode. A potential difference between a first power supply line voltage VDDp and a second power line voltage VEEp decreases with proximity to the center of a display unit. | 2015-02-26 |
20150053954 | ELECTRONIC DEVICE, IMAGE DISPLAY APPARATUS, AND SUBSTRATE FOR CONFIGURING IMAGE DISPLAY APPARATUS - An electronic device includes a first electrode and a second electrode which are separately formed on a base; a functional layer which includes an organic semiconductor material layer, and is formed on the base between the first electrode and the second electrode; a functional layer extension portion which includes the organic semiconductor material layer, and extends from the functional layer; a protective film which is formed at least on the functional layer; and an insulating layer which covers an entire surface, in which the protective film is patterned to include at least two sides which intersect with each other at an acute angle, and a vertex portion of the protective film in which the two sides intersect with each other, is chamfered. | 2015-02-26 |