08th week of 2014 patent applcation highlights part 12 |
Patent application number | Title | Published |
20140048714 | APPARATUS AND METHODS FOR CHARGE COLLECTION CONTROL IN RADIATION DETECTORS - Apparatus and methods for charge collection control in radiation detectors are provided. One radiation detector includes a semiconductor substrate, at least one cathode on a surface of the semiconductor substrate, and a plurality of anodes on a surface of the semiconductor substrate opposite the at least one cathode, wherein the plurality of anodes have gaps therebetween. The radiation detector further includes a charge collection control arrangement configured to cause one or more charges induced within the semiconductor substrate by incident photons to drift towards one or more of the plurality of anodes. | 2014-02-20 |
20140048715 | RADIATION DETECTION ELEMENT AND RADIOGRAPHIC IMAGING DEVICE - The present invention provides a radiation detection element and a radiographic imaging device that may provide optimal resolution that corresponds to the purpose of imaging and to imaging speed, and that may suppress increase in device size. Namely, TFTs of plural pixels in a column direction are connected to the same signal lines. When a moving image is imaged, a control signal is output via a control line, the TFTs of the pixels are turned on, and the charges are read-out from sensor sections. Since the two pixels×two pixels are operated as one pixel and the charges are extracted, resolution may be lowered when compared with a still image and a frame rate may be improved. | 2014-02-20 |
20140048716 | LOW POWER TDC-ADC AND ANGER LOGIC IN RADIATION DETECTION APPLICATIONS - A diagnostic imaging device includes a signal processing circuit ( | 2014-02-20 |
20140048717 | RADIATION ANALYZER AND METHOD FOR ANALYZING RADIATION - A radiation analyzer includes: a transition edge sensor (TES) that detects radiation; a current detection mechanism that detects a current flowing in the TES; a peak analyzing unit that measures a peak value based on the current detected by the current detection mechanism; a first heater that heats the TES to keep a constant temperature; a sensitivity correction operating unit that corrects sensitivity of the TES based on a relation obtained in advance between an output of the first heater and a peak value measured by the peak analyzing unit. | 2014-02-20 |
20140048718 | CHARGED PARTICLE BEAM IRRADIATION APPARATUS - A charged particle beam irradiation apparatus includes: a transport line configured to transport a charged particle beam; and a rotating gantry rotatable around a rotation axis, wherein the transport line has an inclined section configured to make the charged particle beam advancing in a direction of the rotation axis advance to be inclined so as to become more distant from the rotation axis, and is formed so as to turn the charged particle beam advanced in the inclined section to a rotational direction of the rotation axis and bend the charged particle beam turned to the rotational direction to the rotation axis side, the rotating gantry is formed of a tubular body which can accommodate an irradiated body and supports the transport line, and the inclined section is disposed to pass through the inside of the tubular body of the rotating gantry. | 2014-02-20 |
20140048719 | Water Treatment Methods and Apparatus - Methods and apparatus may permit the generation of consistent output synthesis gas from highly variable input feedstock solids carbonaceous materials. A stoichiometric objectivistic chemic environment may be established to stoichiometrically control carbon content in a solid carbonaceous materials gasifier system. Processing of carbonaceous materials may include dominative pyrolytic decomposition and multiple coil carbonaceous reformation. Dynamically adjustable process determinative parameters may be utilized to refine processing, including process utilization of negatively electrostatically enhanced water species, process utilization of flue gas, and adjustment of process flow rate characteristics. Recycling may be employed for internal reuse of process materials, including recycled negatively electrostatically enhanced water species, recycled flue gas, and recycled contaminants. Synthesis gas generation may involve predetermining a desired synthesis gas for output and creating high yields of such a predetermined desired synthesis gas. | 2014-02-20 |
20140048720 | SAMPLE HOLDER OF ELECTRON BEAM EXPOSURE APPARATUS AND ELECTRON BEAM EXPOSURE METHOD USING THE SAME - A sample holder to be disposed between an electrostatic chuck and a sample smaller than the upper surface of the electrostatic chuck is provided, the sample holder including: a base plate formed in the same size as the upper surface of the electrostatic chuck; a sample placement portion located on the upper surface of the base plate, and designed to place the sample thereon; and a circumferential portion being a portion of the upper surface of the base plate other than the sample placement portion, and having a conductive material exposed to the outside. | 2014-02-20 |
20140048721 | ULTRAVIOLET LIGHT GENERATING TARGET, ELECTRON-BEAM-EXCITED ULTRAVIOLET LIGHT SOURCE, AND METHOD FOR PRODUCING ULTRAVIOLET LIGHT GENERATING TARGET - An ultraviolet light generating target | 2014-02-20 |
20140048722 | CAPILLARY ELECTROPHORESIS FLUORESCENT DETECTION SYSTEM - The invention includes a high sensitivity and high throughput capillary electrophoresis multiwavelength florescence detection system. The fluorescent detection system is configured to illuminate a relatively large volume of a single capillary or a plurality of capillaries, with a pixelated detection system capable of imaging an area of each capillary that differentiates the capillary walls, the space between the capillaries, and the internal liquid volume within the capillary. Only the desired pixels or image area are used for processing and generating an output signal. | 2014-02-20 |
20140048723 | AUTHENTICATION WITH ACCESS CONTROL AND CALIBRATION - A method of enabling an authenticating device ( | 2014-02-20 |
20140048724 | ANTISEPTIC SYSTEM USING ULTRAVIOLET RAYS - A sterilization system is configured to emit optical energy, e.g., light, for sterilizing a surface, such as a door handle, faucet handle, elevator button, or other target surfaces known in the art. The sterilization system is configured to operate automatically in response to detection of a user's hand interfacing with the handle. In other words, after a user releases a handle, the sterilization system is actuated to sanitize the handle for subsequent users. | 2014-02-20 |
20140048725 | Method for generating high power electromagnetic radiation based on double-negative metamaterial - A method for generating high power electromagnetic radiation based on double-negative metamaterial (DNM), includes providing electrons of an electron beam moving in a vacuum close to an interface between the DNM and the vacuum at a predetermined average speed larger than a phase velocity of an electromagnetic wave propagating in the DNM so as to generate coherent high power radiation. The method can be applied but not limited to high power and compact Terahertz radiation sources and Cherenkov particle detectors and emitters. | 2014-02-20 |
20140048726 | NANO-ANTENNA AND METHODS FOR ITS PREPARATION AND USE - Nano-antennas with a resonant frequency in the optical or near infrared region of the electromagnetic spectrum and methods of making the nano-antennas are described. The nano-antenna includes a porous membrane, a plurality of nanowires disposed in the porous membrane, and a monolayer of nanospheres each having a diameter that is substantially the same as a diameter of the nanowires. The nanospheres are electrically in series with the nanowires. | 2014-02-20 |
20140048727 | INTERNALLY MOUNTED COLLIMATORS FOR STEREOTACTIC RADIOSURGERY AND STEREOTACTIC RADIOTHERAPY - A beam filter positioning device includes a first and a second axes operable to move a body supporting one or more collimators, one or more photon flattening filters, one or more electron foils, and field light mirror etc. The collimators may be configured to collimate radiation to define a treatment beam suitable for radiosurgery. A controller is programmed to control the servo motor of the first and second axes to accurately position the beam filters. Radiation apparatuses and systems incorporating the beam filter positioning device or assembly are also provided. | 2014-02-20 |
20140048728 | GENERIC ELECTROMAGNETICALLY-COUNTERED METHODS - Various electromagnetically-countered systems are provided and include at least one wave source irradiating harmful electromagnetic waves and at least one counter unit emitting counter electromagnetic waves for countering the harmful waves. Various generic counter units of such systems and various mechanisms are provided to counter the harmful waves by the counter units by matching configurations of the counter units with those of the wave sources, matching shapes of such counter waves with shapes of the harmful waves, etc. Various methods are provided for countering the harmful waves with the counter waves by such source or wave matching. Various methods are also provided for the counter units as well as counter waves. Various processes are provided for providing such systems and counter units. Various electric and/or magnetic shields may be used alone or in conjunction with such counter units to minimize irradiation of the harmful waves from the system. | 2014-02-20 |
20140048729 | Radiation protection device - The present invention relates to the protection of medical patients and personnel from harmful radiation. More specifically, this invention provides a compact, light-weight article to be worn in areas of the body most sensitive to radiation. These include, for example, the pelvic area, the genital and gonad areas, the breast area to guard against radiation to the mammary gland, the neck and throat to protect the thyroid gland, the eye area to protect the crystalline lens. | 2014-02-20 |
20140048730 | Radiation Protection System - A radiation protection system for protecting medical personnel from radiation being applied from a radiation source to a patient positioned on a table that includes a radiation-shielding wall including, upper shield suspended by a gas spring lift arm, the upper shield consisting of translucent radiation resistance window, with a left and right side of flexible radiation shielding material, that telescopes down on each side of the table to form a complete radiation barrier. The shield is positioned above the table. The shield also has a radiation-shielding flexible interface attached to the radiation shielding window that covers a portion of the patient. | 2014-02-20 |
20140048731 | BLOW OUT PREVENTER - A blow out preventer (BOP), in particular a new configuration of BOP which may have a smaller outer diameter for a given operating force than conventional BOPs comprises a housing which has a longitudinal axis and which is divided in a first housing part ( | 2014-02-20 |
20140048732 | MAGNETIC VALVE DEVICE - A magnetic valve device includes a valve receiving device and a valve insert of a magnetic valve which is received in the valve receiving device. A high pressure resistance is obtained in one of the modes of embodiment. The magnetic valve device includes either a pressure mechanism configured to press the valve insert against the valve receiving element or a sealing element arranged in a notch in the valve insert or a sealing element arranged between an axial filter and the valve insert. | 2014-02-20 |
20140048733 | Double Flap Valve with Quick-Change Replaceable Wear Surface - A flap-gate valve having a replaceable wear surface, methods of replacing a wear surface with a replacement wear surface, and methods of retrofitting an existing flap-gate valve with components adapted to work in conjunction with a replaceable wear surface. | 2014-02-20 |
20140048734 | PLUG VALVE HAVING PRELOADED SEAL SEGMENTS - A plug valve including a valve body having an inlet port, an outlet port and a central chamber extending between the inlet port and the outlet port. The valve also includes an inlet seal segment within the central chamber and includes a bore extending therethrough and aligned with the inlet port. An outlet seal segment is disposed within the central chamber having a bore extending therethrough and aligned with the outlet port. A plug member is disposed in the central chamber and is moveable between an open position, to facilitate fluid flow through the plug valve, and a closed position, to block fluid flow through the plug valve. First and second side segments are disposed between and interlocked to the inlet and outlet seal segments to encircle the plug member. The side segments are tensioned to preload the seal segments against the plug member to prevent the flow of fluid between the seal segments and the plug member. | 2014-02-20 |
20140048735 | BALL OR HALF-BALL VALVE WITH DRAIN-PROOF MECHANISM - A ball or half-ball valve with drain-proof mechanism comprises a body; inner side of the body being formed as a chamber and a through hole communicated to the chamber; an annular seat received in an annular trench of a wall of the through hole; a drain-proof unit; a valve unit installed to the inner side of the annular seat; the valve unit having an axial hole for receiving the stem; and a cover having a size corresponding to that of the through hole of the body; the cover being locked to an outer side of the through hole. The drain-proof unit has three different structures. The elements of the structures are replaceable with each other for being installed to the valve. Each mode is suitable for different environments. In the present invention, the cover can be detached easily for repairing or maintaining the elements therein. It is easy and convenient. | 2014-02-20 |
20140048736 | VALVE | 2014-02-20 |
20140048737 | Azeotrope-Like Compositions of Pentafluoroethane and Trifluoroiodomethane - Provided are azeotrope-like compositions comprising heptafluoropropane and trifluoroiodomethane and uses thereof, including use in refrigerant compositions, refrigeration systems, blowing agents, fire suppressant compositions, and aerosol propellants. | 2014-02-20 |
20140048738 | NANO PARTICLE/POLYAMIDE COMPOSITE MATERIAL, PREPARATION METHOD THEREFOR, AND USE THEREOF - The present invention relates to the technical field of polymer composite material, and a nano particle/polyamide composite material, a preparation method therefor and a use thereof are disclosed. The nano particle/polyamide composite material comprises 0.01-99 parts by weight of inorganic nano particles and 1-99.99 parts by weight of a polyamide matrix. The preparation method for the nano particle/polyamide composite material of the present invention comprises hydrolysis polymerization or anionic polymerization. The nano particle/polyamide composite material of the present invention has the particular functions of nano materials, while having the advantages of the polymer matrix such as good mechanical performance and being easy for processing and molding. The nano particle is well dispersed in the polyamide matrix, is physically stable, and has a strong interaction at an interface between the nano particles and the polymer matrix, thus being useful as a structural material, a functional material and a polymer masterbatch. The cost of raw materials used in the synthesis method is low, the production apparatus is simple, and the route is green and environment friendly. Therefore, the method is applicable to large-scale industrial production. | 2014-02-20 |
20140048739 | COMPOSITIONS OF CHLORO-TRIFLUOROPROPENE AND HEXAFLUOROBUTENE - Provided are compositions, preferably azeotrope or azeotrope-like compositions comprised of 1,1,1,4,4,4-hexafluoro-2-butene and chlorotrifluoropropene, particularly 1-chloro-3,3,3-trifluoropropene (HCFO-1233zd), and uses thereof. | 2014-02-20 |
20140048740 | LOW-EMISSION COLD-SETTING BINDER FOR THE FOUNDRY INDUSTRY - The present invention relates primarily to a mixture that is suitable for use in the no-bake process for producing cores and moulds for the foundry industry, and a reaction mixture comprising said mixture and an acid hardener (i.e. an acid catalyst). The present invention further relates to a method of producing a mixture according to the invention and a method of producing a mould or a core. The invention also relates to a mould or a core for producing metal objects and a kit comprising a mixture according to the invention and certain acid hardeners. The invention further relates to the use of a mixture according to the invention as cold-setting binder and the use of said mixtures or reaction mixtures in a no-bake process for producing metal objects. | 2014-02-20 |
20140048741 | FILTRATION MEDIA - A filtration media is disclosed comprising functionalized particles distributed throughout a sintered porous matrix, the sintered porous matrix derived from a combination of components comprising first ultra-high molecular weight polyethylene initially comprising a plurality of non-porous particles having a first shape that is substantially spherical; second ultra-high molecular weight polyethylene initially comprising a plurality of non-spherical perforated particles having a second shape that is convoluted; and third ultra-high molecular weight polyethylene initially comprising a plurality of non-spherical perforated particles having a third shape that is convoluted, wherein the functionalized particles comprise a range from about 20% by weight to about 90% by weight of the sintered porous matrix. | 2014-02-20 |
20140048742 | FLUORESCENT SUBSTANCE AND A PRODUCTION METHOD THEREFOR - The fluorescent substance according to one embodiment of the present invention has the following compositional formula (1): [Compositional formula 1] Sr | 2014-02-20 |
20140048743 | LUMINOPHORES AND CORE-SHELL LUMINOPHORE PRECURSORS - A novel type of green luminophore containing mixed rare-earth phosphates is produced from precursor particles having a mean diameter ranging from 1.5 to 15 microns; such particles have an inorganic core and a shell of a mixed lanthanum and/or cerium phosphate, optionally doped with terbium, evenly covering the inorganic core with a thickness greater than or equal to 300 nm. | 2014-02-20 |
20140048744 | SYSTEM AND METHOD FOR GASIFICATION - A system includes a gasification vessel configured to receive a fuel and an oxidizer. The system also includes a gasifier disposed in the gasification vessel. The gasifier is configured to partially oxidize the fuel and the oxidizer to generate a syngas. The system further includes a convective syngas cooler configured to cool the syngas via heat exchange with a coolant. The convective syngas cooler is disposed in an interior of the gasification vessel. | 2014-02-20 |
20140048745 | FORMULATIONS AND ELECTRONIC DEVICES - The present invention relates to a formulation comprising at least one solvent and at least two functional compounds of the general formula (I) where A is a functional structural element, B is a solubility-promoting structural element and k is an integer in the range from 1 to 20, the molecular weight of the functional compound is at least 550 g/mol and the solubility-promoting structural element B conforms to the general formula (L-I) where Ar1, Ar2 is each, independently of one another, an aryl or heteroaryl group, which may be substituted by one or more radicals R of any desired type, X is in each case, independently of one another, N or CR2, preferably CH, R1, R2 is each, independently of one another, hydrogen, a straight-chain alkyl, alkoxy or thioalkoxy group having 1 to 40 C atoms or a branched or cyclic alkyl, alkoxy or thioalkoxy group having 3 to 40 C atoms or is a silyl group or a substituted keto group having 1 to 40 C atoms, an alkoxycarbonyl group having 2 to 40 C atoms, an aryloxycarbonyl group having 7 to 40 C atoms, a cyano group (CN), a carbamoyl group (C(═O)NH2), a haloformyl group (C(═O)—X, in which X represents a halogen atom), a formyl group (C(═O)—H), an isocyano group, an isocyanate group, a thiocyanate group or a thio-isocyanate group, a hydroxyl group, a nitro group, a CF3 group, Cl, Br, F, a crosslinkable group or a substituted or unsubstituted aromatic or heteroaromatic ring system having 5 to 60 ring atoms, or an aryloxy or heteroaryloxy group having 5 to 60 ring atoms, or a combination of these systems, where one or more of the groups R1 and/or R2 may form a mono- or polycyclic, aliphatic or aromatic ring system with one another and/or with the ring to which the group R1 is bonded; and l is 0, 1, 2, 3 or 4; where the dashed bond indicates the bond to the functional structural element A. The present invention furthermore relates to electronic devices which comprise mixtures of these compounds. | 2014-02-20 |
20140048746 | POLYVINYL COPOLYMER, DOPANT HAVING THE SAME, AND CONDUCTIVE POLYMER COMPOSITE HAVING THE DOPANT - The present disclosure relates to a polyvinyl copolymer in which one or more side-chain sulfonic acids are attached on the hydroxy group of polyvinyl alcohol or a polyvinyl phenol and a preparation method thereof, a dopant including the same, a conductive polymer composite including the dopant with a conductive polymer and a preparation method thereof, wherein the electrical conductivity, dispersibility, solubility, heat-resistance and environment-resistance of the conductive polymer composite can be enhanced by using the dopant including the copolymer. | 2014-02-20 |
20140048747 | ELECTRICALLY CONDUCTING COMPOSITIONS FOR ORGANIC ELECTRONIC DEVICES - The present invention discloses an electrically conducting composition that include a charge transporting oligomer selected either from oligoanilines and/or oligothiophenes and electron accepting dopants; and further contain conductivity enhancing substances such as ionic liquids, or a nanoparticle, dissolved in a mixture of at least two solvents to achieve the desired formulation for making the electrically conductive layer for organic electronic devices. | 2014-02-20 |
20140048748 | GRAPHENE NANORIBBON COMPOSITES AND METHODS OF MAKING THE SAME - In some embodiments, the present invention provides graphene nanoribbon composites that include a polymer matrix and graphene nanoribbons that are dispersed in the polymer matrix. In more specific embodiments, the polymer matrix of the composite is an epoxy matrix, and the graphene nanoribbons of the composite include functionalized graphene nanoribbons. In further embodiments, the composites of the present invention further comprise metals, such as tin, copper, gold, silver, aluminum and combinations thereof. Additional embodiments of the present invention pertain to methods of making the graphene nanoribbon composites of the present invention. In some embodiments, such methods include mixing graphene nanoribbons with polymer precursors to form a mixture, and then curing the mixture to form the composite. | 2014-02-20 |
20140048749 | Conductive Ink Composition - A representative printable composition comprises a liquid or gel suspension of a plurality of conductive particles; a first solvent comprising a polyol or mixtures thereof, such as glycerin, and a second solvent comprising a carboxylic or dicarboxylic acid or mixtures thereof, such as glutaric acid. In various embodiments, the conductive particles are comprised of a metal, a semiconductor, an alloy of a metal and a semiconductor, or mixtures thereof, and may have sizes between about 5 nm to about 1.5 microns in any dimension. A representative conductive particle ink can be printed and annealed to produce a conductor. | 2014-02-20 |
20140048750 | CONDUCTIVE PASTE COMPOSITION FOR INTERNAL ELECTRODE AND MULTILAYERED CERAMIC ELECTRONIC COMPONENT CONTAINING THE SAME - There is provided a conductive paste composition for an internal electrode of a multilayered ceramic electronic component including: a metal powder; and a chrome (Cr) or cobalt (Co) powder having a melting point higher than that of the metal powder. In the conductive paste composition for the internal electrode, the sintering shrinkage temperature of the internal electrode may be increased, and the connectivity of the internal electrode may be improved. | 2014-02-20 |
20140048751 | PHOTONIC SINTERING OF POLYMER THICK FILM CONDUCTOR COMPOSITIONS - This invention provides a method for using a polymer thick film conductor composition to form an electrical conductor in an electrical circuit, the method subjecting the deposited thick film conductor composition to photonic sintering. The invention also provides a method for reducing the resistance of an electrical conductor formed from a polymer thick film conductor composition, the method comprising the step of subjecting the electrical conductor to photonic sintering. The invention further provides devices containing electrical conductors made by these methods. | 2014-02-20 |
20140048752 | METHOD OF MANUFACTURING SOLAR CELL ELECTRODE AND CONDUCTIVE PASTE - The present invention relates to a method of manufacturing a solar cell electrode, comprising: preparing a semiconductor substrate having a preformed electrode on a front side, a back side, or both of the front and the back side of the semiconductor substrate; applying a conductive paste onto the preformed electrode, wherein the conductive paste comprises a conductive powder, an amorphous saturated polyester resin with glass transitional temperature (Tg) of 50° C. or lower, and an organic solvent; drying the applied conductive paste; putting a tab electrode on the dried conductive paste; and soldering the tab electrode. | 2014-02-20 |
20140048753 | METHOD FOR DISSOLVING A PHTHALOCYANINE COMPOUND IN WATER WITH USE OF G-QUADRUPLEX - The present invention provides a method for obtaining an aqueous solution where divalent metal cations, a phthalocyanine compound modified with an anionic functional group, and G-quadruplex are dissolved, the method comprising step of:
| 2014-02-20 |
20140048754 | MAINTENANCE LIQUID - Disclosed is a maintenance liquid for property carrying out imprints excellent in patternability. The maintenance liquid for imprints of an ink-jet discharging device comprises a compound comprising an ester group and/or an ether group. | 2014-02-20 |
20140048755 | Roll Claw - The Roll Claw is a complementary tool with a purpose of using less stress force to do work. It is made with a rounded head and a claw end. It has a square portal that accepts a ratchet or pull handle of any make, and a round portal that accepts a chain link of any make where a tension strap with a hook can be attached. Measurements are noted in detailed explanations. | 2014-02-20 |
20140048756 | DRIVING DEVICE FOR VENDING MACHINE - A driving device in a vending machine includes a pushing member, a securing member, and a driving assembly. The motor of the driving assembly provides a rotating force which acts on the securing member, and the securing member supports and rotates the helical pushing member, to drive goods out of the vending machine. The style of attachment between the pushing member and the securing member is such that the starting angle of the helical pushing member can be adjusted by unclipping the end of the pushing member with fingertip force from the securing member and reclipping it at a different preferred orientation. The driving device is used for adjusting the appropriate rotation angle of the pushing member. | 2014-02-20 |
20140048757 | METHOD AND APPARATUS FOR MANUAL EXTRACTION OF IN GROUND OBJECTS - The present invention includes a tool for extracting objects that are embedded in the ground; such as plants, posts, and cables. The extractor comprises a puller pole attached to a curved fulcrum and a parallel, offset, engagement pole. The object extractor includes a locator used for aligning objects with the object extractor. The engagement pole incorporates cabling and ratcheting systems, which assist in the tightening of the embedded object to the apparatus. An individual then applies sufficient pulling force to the puller pole resulting in extraction of the object from the ground. | 2014-02-20 |
20140048758 | Fence Stretcher - A fence stretcher for use in building fences that can be used by one person and is able to stretch fence wire under a constant tension. The fence stretcher has a winch assembly to which a tensioning cable is connected. A wire grabber is attached to the tensioning cable and is used to securely hold the fence wire. The winch assembly is used to stretch the fence wire such that the fence wire is tensioned, at which point a brake assembly is engaged. The brake assembly allows the fence wire to be fed to the user at the user's desired tension level. A mount assembly allows the present invention to be attached to a brace structure at the desired height for laying the fence. The fence stretcher is able to automatically feed any type of wire or cable across any type of terrain while following the contours of the terrain. | 2014-02-20 |
20140048759 | Length-Adjustable Telescopic Tube, Support Jack and Assembly Process - A length-adjustable telescopic tube ( | 2014-02-20 |
20140048760 | SYNCHRONIZED LIFTING AND LOWERING APPARATUS - A synchronous lifting or lowering system with hydraulic cylinders controlled by parallel-connected lift valves having two fluid passages. Hydraulic fluid for extending or retracting the actuators is delivered by a hydraulic supply system alternating between the two passages. Each time the supply circuit alternates passages, a fixed volume of hydraulic fluid is transferred during lifting or received during lowering by the respective lift or lowering valves to or from the cylinders causing the rods to lift or lower a proportionate amount. All of the rods extend during advancement or retract during lowering by approximately the same increment each time the supply circuit alternates passages. Because the rods all extend or retract the same increment each cycle, the load is lifted or lowered evenly and the need for height sensors or transducers is eliminated. | 2014-02-20 |
20140048761 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor memory device according to an embodiment comprises: a semiconductor substrate; and a memory cell block formed on the semiconductor substrate and configured having a plurality of memory cell arrays, each of the memory cell arrays including a plurality of column lines, a plurality of row lines, and a plurality of memory cells disposed at each of intersections of the plurality of column lines and the plurality of row lines, each of the memory cells including a variable resistance element having a transition metal oxide as a material, at least one of the plurality of column lines and the plurality of row lines being a polysilicon wiring line having polysilicon as a material, and the memory cell block including a block film between the variable resistance element of the memory cell and the polysilicon wiring line. | 2014-02-20 |
20140048762 | PHASE CHANGE MEMORY ELEMENT - A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers. | 2014-02-20 |
20140048763 | FORMING RESISTIVE RANDOM ACCESS MEMORIES TOGETHER WITH FUSE ARRAYS - A resistive random access memory array may be formed on the same substrate with a fuse array. The random access memory and the fuse array may use the same active material. For example, both the fuse array and the memory array may use a chalcogenide material as the active switching material. The main array may use a pattern of perpendicular sets of trench isolations and the fuse array may only use one set of parallel trench isolations. As a result, the fuse array may have a conductive line extending continuously between adjacent trench isolations. In some embodiments, this continuous line may reduce the resistance of the conductive path through the fuses. | 2014-02-20 |
20140048764 | SUB-10 NM GRAPHENE NANORIBBON LATTICES - A graphene lattice comprising an ordered array of graphene nanoribbons is provided in which each graphene nanoribbon in the ordered array has a width that is less than 10 nm. The graphene lattice including the ordered array of graphene nanoribbons is formed by utilizing a layer of porous anodized alumina as a template which includes dense alumina portions and adjacent amorphous alumina portions. The amorphous alumina portions are removed and the remaining dense alumina portions which have an ordered lattice arrangement are employed as an etch mask. After removing the amorphous alumina portions, each dense alumina portion has a width which is also less than 10 nm. | 2014-02-20 |
20140048765 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention discloses a semiconductor device, comprising: a substrate, a gate stack structure on the substrate, source and drain regions in the substrate on both sides of the gate stack structure, and a channel region between the source and drain regions in the substrate, characterized in that the source region in the source and drain regions comprises GeSn alloy, and a tunnel dielectric layer is optionally comprised between the GeSn alloy of the source region and the channel region. In accordance with the semiconductor device and method for manufacturing the same of the present invention, GeSn alloy having a narrow band gap is formed by implanting precursors and performing a laser rapid annealing, the on-state current of TFET is effectively enhanced, accordingly it has an important application prospect in a high performance low power consumption application. | 2014-02-20 |
20140048766 | METHOD FOR FABRICATING LIGHT EMITTING DIODE (LED) DICE USING BOND PAD DAM AND WAVELENGTH CONVERSION LAYERS - A method for fabricating light emitting diode (LED) dice includes the step of forming a light emitting diode (LED) die having a multiple quantum well (MQW) layer configured to emit electromagnetic radiation, and a confinement layer on the multiple quantum well (MQW) layer having a wire bond pad. The method also includes the steps of forming a dam on the wire bond pad configured to protect a wire bond area on the wire bond pad, forming an adhesive layer on the confinement layer and the wire bond pad with the dam protecting the wire bond area, and forming a wavelength conversion layer on the adhesive layer. A light emitting diode (LED) die includes the dam on the wire bond pad, the adhesive layer on the confinement layer and the wavelength conversion layer on the adhesive layer configured to convert the electromagnetic radiation to a second spectral region. | 2014-02-20 |
20140048767 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE - In a semiconductor light emitting element outputting light indicating green color by using a group III nitride semiconductor, light emission output is improved. A semiconductor light emitting element includes: an n-type cladding layer containing n-type impurities (Si); a light emitting layer laminated on the n-type cladding layer; and a p-type cladding layer containing p-type impurities and laminated on the light emitting layer. The light emitting layer has a barrier layer including first to fifth barrier layers and a well layer including first to fourth well layers, and has a multiple quantum well structure to sandwich one well layer by two barrier layers. The light emitting layer is configured such that the first to fourth well layers are set to have a composition to emit green light, and the first barrier layer is doped with n-type impurities, whereas the other barrier layers are not doped with n-type impurities. | 2014-02-20 |
20140048768 | LIGHT-EMITTING DEVICE - A light-emitting device disclosed herein comprises a substrate, an active layer formed on the substrate and including a first quantum well, a second quantum well and a barrier layer disposed between the first quantum well and the second quantum well. The barrier layer includes a first region adjacent to the first quantum well, a third region adjacent to the second quantum well and a second region disposed between the first region and the third region and comprising Sb. | 2014-02-20 |
20140048769 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed. | 2014-02-20 |
20140048770 | NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR GROWING NITRIDE SEMICONDUCTOR CRYSTAL - According to one embodiment, a nitride semiconductor wafer includes a silicon substrate, a lower strain relaxation layer provided on the silicon substrate, an intermediate layer provided on the lower strain relaxation layer, an upper strain relaxation layer provided on the intermediate layer, and a functional layer provided on the upper strain relaxation layer. The intermediate layer includes a first lower layer, a first doped layer provided on the first lower layer, and a first upper layer provided on the first doped layer. The first doped layer has a lattice constant larger than or equal to that of the first lower layer and contains an impurity of 1×10 | 2014-02-20 |
20140048771 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND LIGHT SOURCE - A nitride semiconductor light-emitting element uses a non-polar plane as its growing plane. A GaN/InGaN multi-quantum well active layer includes an Si-doped layer which is arranged in an In | 2014-02-20 |
20140048772 | LOW-VOLTAGE HIGH-GAIN HIGH-SPEED GERMANIUM PHOTO DETECTOR AND METHOD OF FABRICATING THE SAME - Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires. | 2014-02-20 |
20140048773 | Techniques for Metal Gate Work Function Engineering to Enable Multiple Threshold Voltage Nanowire FET Devices - A nanowire FET device includes a SOI wafer having a SOI layer over a BOX, and a plurality of nanowires and pads patterned in the SOI layer, wherein the nanowires are suspended over the BOX; an interfacial oxide surrounding each of the nanowires; and at least one gate stack surrounding each of the nanowires, the gate stack having (i) a conformal gate dielectric present on the interfacial oxide (ii) a conformal first gate material on the conformal gate dielectric (iii) a work function setting material on the conformal first gate material, and (iv) a second gate material on the work function setting material. A volume of the conformal first gate material and/or a volume of the work function setting material in the gate stack are/is proportional to a pitch of the nanowires. | 2014-02-20 |
20140048774 | GRAPHENE NANORIBBONS AND CARBON NANOTUBES FABRICATED FROM SiC FINS OR NANOWIRE TEMPLATES - Semiconductor structures including parallel graphene nanoribbons or carbon nanotubes oriented along crystallographic directions are provided from a template of silicon carbide (SiC) fins or nanowires. The SiC fins or nanowires are first provided and then graphene nanoribbons or carbon nanotubes are formed on the exposed surfaces of the fin or the nanowires by annealing. In embodiments in which closed carbon nanotubes are formed, the nanowires are suspended prior to annealing. The location, orientation and chirality of the graphene nanoribbons and the carbon nanotubes that are provided are determined by the corresponding silicon carbide fins and nanowires from which they are formed. | 2014-02-20 |
20140048775 | ORGANIC LIGHT EMITTING DIODE WITH TRANSPARENT ELECTRODE AND METHOD OF MAKING SAME - A transparent electrode is provided for an organic light emitting diode (OLED) device. The electrode may be made according to a method including: sputter-depositing a first layer of or including indium tin oxide (ITO) on a substrate; sputter-depositing a thin second metallic or substantially metallic layer on the glass substrate over the first layer to form an electrode structure, and heat treating the electrode structure at temperature(s) of at least about 400 degrees C. in order to thermally activate at least the first layer of or including ITO. The electrode structure may then be provided in an OLED device on the light-emitting side of the organic light emitting semiconductor layer. | 2014-02-20 |
20140048776 | PROTEIN TRANSISTOR DEVICE - The present invention discloses a protein transistor device, wherein an antibody molecule (antibody-antigen) is bonded to at least two gold nanoparticles in a high reproducible self-assembly way to form molecular junctions, and wherein the two gold nanoparticles are respectively joined to a drain and a source. The protein transistor device can be controlled to regulate current via applying a bias to the gate. The conformational change of the protein molecule will cause the variation of the charge transport characteristics of the protein transistor device. The protein transistor device can be further controlled by different optical fields via conjugating a quantum dot to the molecular junctions. Therefore, the present invention has diversified applications. | 2014-02-20 |
20140048777 | ORGANIC LIGHT EMITTING DIODE MODULE - An organic light emitting diode module is provided and includes a substrate, a first electrode located on the substrate, a pair of second electrodes located on the substrate, a light emitting element located on the substrate, a first copper foil electrically connected to the first electrode, a pair of second copper foils respectively electrically connected to the second electrodes, and a cross connection conductor electrically connected to the second copper foils. The second electrodes are in an arrangement opposite to one another. The light emitting element includes a first electrode layer electrically connected to the first electrode, a second electrode layer located between the second electrodes and electrically connected to the second electrodes, and an organic light emitting layer located between the first and second electrode layers. | 2014-02-20 |
20140048778 | Display Apparatus - A display apparatus including an organic light emitting display including a terminal portion, a battery disposed on a surface of the organic light emitting display, and a flexible printed circuit board (PCB) bent to cover the organic light emitting display and the battery, a side of the flexible PCB being connected to the terminal portion and another side of the flexible PCB extending outside and attached to the battery. | 2014-02-20 |
20140048779 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device includes an organic light emitting display panel including first to third pixels that emit light of different colors, a wavelength of a color light emitted from the third pixel being shorter than wavelengths of color lights emitted from the first and second pixels, a window on an upper portion of the display panel, and a light shielding pattern on the window, the light shielding pattern being adjacent to an outline of the third pixel. | 2014-02-20 |
20140048780 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF - Disclosed are an organic light emitting diode display and a manufacturing method thereof, and, more particularly, an organic light emitting diode display which includes an encapsulation layer including an inorganic layer containing carbon at a level of about 0.2 wt % to about 6.2 wt % and an organic layer and a manufacturing method thereof. | 2014-02-20 |
20140048781 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus includes a substrate comprising pixels, each of which comprises a first sub-pixel, a second sub-pixel, and a third sub-pixel, and a plurality of pixel electrodes independently formed for respective sub-pixels; a first common layer commonly formed on the pixels; first lines covering first sub-pixels arranged in a first direction, wherein the first lines comprise a first organic light-emitting layer; a plurality of second lines covering second sub-pixels arranged in the first direction, wherein the second lines comprise a second organic light-emitting layer differing from the first organic light-emitting layer; a second common layer commonly formed on the plurality of pixels, wherein the second common layer comprises a third organic light-emitting layer differing from the first organic light-emitting layer and the second organic light-emitting layer; a third common layer commonly formed on the pixels; and an opposite electrode commonly formed on the pixels. | 2014-02-20 |
20140048782 | SPUTTERING TARGET AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE INCLUDING BLACK MATRIX DEPOSITED THEREBY - A sputtering target and an organic light-emitting display device including a black matrix deposited thereby. The sputtering target is used in a sputtering process for depositing a black matrix in an organic light-emitting display device. The sputtering target has a cermet structure in which a metal and a metal oxide are mixed. | 2014-02-20 |
20140048783 | SPUTTERING TARGET AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE INCLUDING BLACK MATRIX DEPOSITED THEREBY - A sputtering target that can form a black matrix having high-resistance and low-reflection characteristics and an organic light-emitting display device including the black matrix deposited thereby. The sputtering target that is used in a sputtering process for depositing a black matrix contains one selected from the group consisting of Mo—Si—O, W—Si—O and Mo—W—Si—O, the content of the Mo or W being at least 0.5 times the content of the Si. | 2014-02-20 |
20140048784 | BISCARBAZOLE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT ELEMENT USING SAME - A biscarbazole derivative having a specific group, which is represented by formula (1): | 2014-02-20 |
20140048785 | OPTOELECTRONIC COMPONENT AND USE OF A COPPER COMPLEX AS DOPANT FOR DOPING A LAYER - An optoelectronic component includes: a wet-chemically processed hole injection layer; and an additional layer doped with a dopant and adjacent to the wet-chemically processed hole injection layer, the dopant comprising a copper complex having at least one ligand with the chemical structure according to formula I in which E1 and E2 are each independently one of the following elements: sulfur, oxygen or selenium, and R is selected from the group of: hydrogen or substituted or unsubstituted, branched, linear or cyclic hydrocarbons. | 2014-02-20 |
20140048786 | ELECTRODE COMPOSITE AND PHOTOELECTRIC ELEMENT EQUIPPED THEREWITH - The present invention provides an electrode composite that has a reaction interface with a large area and can constitute a photoelectric element having high electron transport properties between the reaction interface and the electrode. The electrode composite of the present invention includes a first electrode and a conductive particle layer stacked on the first electrode. The conductive particle layer includes conductive particles containing acicular particles. The conductive particle layer has a three-dimensional porous network structure that is formed by the interconnection of the conductive particles. The three-dimensional network structure is joined to the first electrode. The conductive particle layer contains pores having a pore size of 50 nm or more in a total volume of 50% or more based on the volume of all pores in the conductive particle layer. | 2014-02-20 |
20140048787 | COMPOUND HAVING TRIAZOLE RING STRUCTURE SUBSTITUTED WITH PYRIDYL GROUP AND ORGANIC ELECTROLUMINESCENT DEVICE - An organic compound having excellent electron transport property and hole blocking property as a material for a highly efficient organic EL device, and also provide a highly efficient organic EL device using the compound. This invention relates to a compound having a triazole ring structure to which a substituted pyridyl group is bonded, represented by the following general formula (1), and to an organic electroluminescence device comprising the compound: | 2014-02-20 |
20140048788 | SUBSTRATE FOR ORGANIC ELECTRONIC DEVICE - The present invention relates to a substrate for an organic electrode device, a manufacturing method thereof, and an organic electronic device. An exemplary substrate of the invention, if an organic light emitting element is formed on an upper part of the substrate, can obtain luminance with high emission and uniformity by efficiently controlling the surface resistance of an electrode even when the device is configured into larger sizes. | 2014-02-20 |
20140048789 | COMPOUND FOR ORGANIC OPTOELECTRONIC DEVICE AND ORGANIC LIGHT EMITTING DIODE INCLUDING THE SAME - A compound for an organic optoelectronic device is represented by the following Chemical Formula 1: | 2014-02-20 |
20140048790 | ORGANIC EL ELEMENT, TRANSLUCENT SUBSTRATE AND METHOD OF MANUFACTURING ORGANIC LED ELEMENT - An organic LED element includes a transparent substrate, a light scattering layer, a first electrode, an organic light emitting layer, and a second electrode. The light scattering layer includes a base material made of glass, and scattering substances dispersed in the base material. The light scattering layer has a refractive index [N″] greater than a refractive index [N′] of the transparent substrate. First and second layers made of a material other than molten glass are arranged between the light scattering layer and the first electrode. A refractive index N | 2014-02-20 |
20140048791 | ELECTRODE FOIL AND ORGANIC DEVICE - There are provided an electrode foil which has all the functions of a supporting base material, an electrode and a reflective layer and also has a superior thermal conductivity; and an organic device using the same. The electrode foil comprises a metal foil, wherein the electrode foil has at least one outermost surface which is an ultra-smooth surface having an arithmetic average roughness Ra of 10.0 nm or less as measured in accordance with JIS B 0601-2001. | 2014-02-20 |
20140048792 | ORGANIC LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - The present invention provides an organic light emitting device comprising a first electrode, a second electrode, and one or more organic material layers disposed between the first electrode and the second electrode, and having an excellent life-span property by changing a dipole moment of a compound comprised in the organic material layers. | 2014-02-20 |
20140048793 | ORGANIC LIGHT-EMITTING ELEMENT, PRODUCTION METHOD FOR ORGANIC LIGHT-EMITTING ELEMENT, DISPLAY DEVICE, AND ILLUMINATION DEVICE - An organic light-emitting element having a high light extraction efficiency and a high light emission efficiency is provided, by an organic light-emitting element ( | 2014-02-20 |
20140048794 | COMPONENT HAVING AN ORIENTED ORGANIC SEMICONDUCTOR - For an organic semiconductor component and production thereof, an organic semiconductor layer is formed from complexes disposed on a boundary between a first layer and a second layer. The organic semiconductor layer is thereby orientated. The first layer is formed of a salt providing the central cations for the complexes. The second layer is formed of molecules that are the ligands of the complexes. Complex formation takes place when the second layer is deposited on the first layer. | 2014-02-20 |
20140048795 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME AND DISPLAY DEVICE INCLUDING THE SAME - Disclosed is a thin film transistor that includes a gate electrode, a semiconductor overlapping with the gate electrode, a source electrode that is electrically connected to the semiconductor, a drain electrode that is electrically connected to the semiconductor and faces the source electrode, and a stacked gate insulating layer that is positioned between the gate electrode and semiconductor. The stacked gate insulating layer includes an aluminum oxide layer. A method of manufacturing the same and a display device including the thin film transistor are also disclosed. | 2014-02-20 |
20140048796 | OXIDE ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided is an oxide electronic device, including: an oxide substrate; an oxide thin film layer formed on the oxide substrate and containing an oxide that is heterogeneous with respect to the oxide substrate; and a ferroelectric layer formed on the oxide thin film layer and controlling electric conductivity of two-dimensional electron gas (2DEG) generated at an interface between the oxide substrate and the oxide thin film layer. Provided also is a method for manufacturing an oxide electronic device, including: depositing, on an oxide substrate, an oxide that is heterogeneous with respect to the oxide substrate to form an oxide thin film layer; and forming a ferroelectric layer on the oxide thin film layer, wherein the ferroelectric layer controls electric conductivity of 2DEG generated at an interface between the oxide substrate and the oxide thin film layer. | 2014-02-20 |
20140048797 | SEMICONDUCTOR DEVICE - There is provided a semiconductor device including a first conductive layer, an insulating layer, a second conductive layer, a channel layer, a passivation layer and a third conductive layer. The insulating layer covers the first conductive layer. The second conductive layer is formed on the insulating layer and has an inner opening. The channel layer is formed on the inner opening of the second conductive layer to fully cover the inner opening. The passivation layer is formed upon the channel layer to cover the channel layer and has a contact hole inside the inner opening of the second conductive layer. The third conductive layer is formed in the contact hole. | 2014-02-20 |
20140048798 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THE SAME - An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced. | 2014-02-20 |
20140048799 | INVISIBLE/TRANSPARENT NONVOLATILE MEMORY - An optically transparent memory device comprises first and second electrodes, wherein the electrodes are formed from conductive material(s) that is transparent. The memory device also provides a resistive memory layer coupled to the first and second electrodes. The resistive memory layer is formed from a resistive memory material providing resistive switching that is transparent. Additionally, the optically transparent memory device may be incorporated into a variety of electronics. | 2014-02-20 |
20140048800 | THIN FILM TRANSISTOR HAVING OXIDE SEMICONDUCTOR LAYER AS OHMIC CONTACT LAYER - A thin film transistor TFT, including a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, an active layer on the gate insulating layer, the active layer corresponding to the gate electrode and including a channel region, source and drain electrodes contacting the active layer, the source and drain electrodes being separate from each other, and an ohmic contact layer between the active layer and at least one of the source and drain electrodes, the ohmic contact layer including an oxide semiconductor material. | 2014-02-20 |
20140048801 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device having a novel structure or a method for manufacturing the semiconductor device is provided. For example, the reliability of a transistor which is driven at high voltage or large current is improved. For improvement of the reliability of the transistor, a buffer layer is provided between a drain electrode layer (or a source electrode layer) and an oxide semiconductor layer such that the end portion of the buffer layer is beyond the side surface of the drain electrode layer (or the source electrode layer) when seen in a cross section, whereby the buffer layer can relieve the concentration of electric field. The buffer layer is a single layer or a stacked layer including a plurality of layers, and includes, for example, an In—Ga—Zn—O film containing nitrogen, an In—Sn—O film containing nitrogen, an In—Sn—O film containing SiOx, or the like. | 2014-02-20 |
20140048802 | Storage Element, Storage Device, And Signal Processing Circuit - A signal processing circuit whose power consumption can be suppressed is provided. In a period during which a power supply voltage is not supplied to a storage element, data stored in a first storage circuit corresponding to a nonvolatile memory can be held by a first capacitor provided in a second storage circuit. With the use of a transistor in which a channel is formed in an oxide semiconductor layer, a signal held in the first capacitor is held for a long time. The storage element can accordingly hold the stored content (data) also in a period during which the supply of the power supply voltage is stopped. A signal held by the first capacitor can be converted into the one corresponding to the state (the on state or off state) of the second transistor and read from the second storage circuit. Consequently, an original signal can be accurately read. | 2014-02-20 |
20140048803 | SEMICONDUCTOR DEVICE CAPABLE OF TESTING BONDING OF PAD - A test circuit includes a phase difference detection unit and a determination unit. The phase difference detection unit detects a phase difference between a first signal received through a first pad and a second signal received through a second pad. The determination unit compares the detected phase difference with a preset amount of delay and outputs a result signal. | 2014-02-20 |
20140048804 | FIN STRUCTURE FORMATION INCLUDING PARTIAL SPACER REMOVAL - A method of forming a semiconductor device includes forming a mandrel on top of a substrate; forming a first spacer adjacent to the mandrel on top of the substrate; forming a cut mask over the first spacer and the mandrel, such that the first spacer is partially exposed by the cut mask; partially removing the partially exposed first spacer; and etching the substrate to form a fin structure corresponding to the partially removed first spacer in the substrate. | 2014-02-20 |
20140048805 | BONDING-SUBSTRATE FABRICATION METHOD, BONDING SUBSTRATE, SUBSTRATE BONDING METHOD, BONDING-SUBSTRATE FABRICATION APPARATUS, AND SUBSTRATE ASSEMBLY - [Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles. | 2014-02-20 |
20140048806 | ELECTRONIC DEVICE AND ITS METHOD OF MANUFACTURE - A method of manufacturing an electronic device comprises: providing a layer of semiconductor material comprising a first portion, a second portion, and a third portion, the third portion connecting the first portion to the second portion and providing a semiconductive channel for electrical current flow between the first and second portions; providing a gate terminal arranged with respect to said third portion such that a voltage may be applied to the gate terminal to control an electrical conductivity of said channel; and processing at least one of the first and second portions so as to have an electrical conductivity greater than an electrical conductivity of the channel when no voltage is applied to the gate terminal. In certain embodiments, the processing comprises exposing at least one of the first and second portions to electromagnetic radiation. The first and second portions may be laser annealed to increase their conductivities. | 2014-02-20 |
20140048807 | METHOD FOR FABRICATING THIN-FILM SEMICONDUCTOR DEVICE AND THIN-FILM SEMICONDUCTOR DEVICE - A thin-film semiconductor device having two thin-film transistors, wherein each of the two thin-film transistors includes: a gate electrode; a gate insulating film; a semiconductor layer; a channel protection layer; an intrinsic semiconductor layer; a contact layer in contact with a portion of sides of the channel region; a source electrode on the contact layer; and a drain electrode opposite to the source electrode on the contact layer, wherein the contact layer of one of the two thin-film transistors has a conductivity type different from a conductivity type of the contact layer of the other of the two thin-film transistors. | 2014-02-20 |
20140048808 | Flat Panel Display and Method of Manufacturing the Same - In a flat panel display (FPD) and a method of manufacturing the same, the FPD includes a substrate, a semiconductor layer formed on the substrate, a wiring line formed on the substrate so as to be separated from the semiconductor layer, an insulating layer formed on the semiconductor layer and the wiring line, a gate electrode formed on the insulating layer formed on the semiconductor layer and extended to a top of the wiring line, and a source electrode and a drain electrode coupled to a source region and a drain region, respectively, of the semiconductor layer. Capacitance is formed by the gate electrode and the wiring line. | 2014-02-20 |
20140048809 | SEMICONDUCTOR ACTIVE MATRIX ON BURIED INSULATOR - A high resolution active matrix backplane is fabricated using techniques applicable to flexible substrates. A backplane layer including active semiconductor devices is formed on a semiconductor-on-insulator substrate. The backplane layer is spalled from the substrate. A frontplane layer including passive devices such as LCDs, OLEDs, photosensitive materials, or piezo-electric materials is formed over the backplane layer to form an active matrix structure. The active matrix structure may be fabricated to allow bottom emission and provide mechanical flexibility. | 2014-02-20 |
20140048810 | DISPLAY DEVICE AND ELECTRONIC DEVICE - A transistor whose channel region includes an oxide semiconductor is used as a pull down transistor. The band gap of the oxide semiconductor is 2.0 eV or more, preferably 2.5 eV or more, more preferably 3.0 eV or more. Thus, hot carrier degradation in the transistor can be suppressed. Accordingly, the circuit size of the semiconductor device including the pull down transistor can be made small. Further, a gate of a pull up transistor is made to be in a floating state by switching of on/off of the transistor whose channel region includes an oxide semiconductor. Note that when the oxide semiconductor is highly purified, the off-state current of the transistor can be 1 aA/μm (1×10 | 2014-02-20 |
20140048811 | SEMICONDUCTOR DEVICE - Solved is a problem of attenuation of output amplitude due to a threshold value of a TFT when manufacturing a circuit with TFTs of a single polarity. In a capacitor ( | 2014-02-20 |
20140048812 | SEMICONDUCTOR DEVICE, ACTIVE MATRIX BOARD, AND DISPLAY DEVICE - Provided is a semiconductor device equipped with: a plurality of switching elements (T | 2014-02-20 |
20140048813 | METHOD FOR FABRICATING THIN-FILM SEMICONDUCTOR DEVICE AND THIN-FILM SEMICONDUCTOR DEVICE - A thin-film semiconductor device) having two thin-film transistors, wherein one of the thin-film transistors includes: a first gate electrode; a first gate insulating film; a first semiconductor film; an intrinsic semiconductor layer; a first contact layer of n-type in contact with and above a portion of the intrinsic semiconductor layer; a first source electrode; and a first drain electrode, and the other of the thin-film transistors includes: a second gate electrode; a second gate insulating film; a second semiconductor film; an intrinsic semiconductor layer; a second contact layer of p-type in contact with portions of sides of the semiconductor film and the intrinsic semiconductor layer; a second source electrode; and a second drain electrode. | 2014-02-20 |