07th week of 2010 patent applcation highlights part 13 |
Patent application number | Title | Published |
20100038564 | MICRO-ACTUATOR DEVICE FOR THE USE IN A BIOCHIP OR BIOSYSTEM - The Invention concerns to a micro-actuator device for the use in biochip or bio-system. In order to achieve a micro-actuator device for the use as a micro pump in biosensors or bio-systems, or at least bio-chips, by which the actuation can be steered very precisely and effective, the solution is that the micro actuator consist of a photosensitive actuator element ( | 2010-02-18 |
20100038565 | PROPELLANT GAS CONTROL VALVE - A gas control valve is configured to controllably supply propellant gas to a thruster so that the thruster may produce thrust over a relatively wide range, and so that the thruster exhibits relatively fine minimum impulse bit (MIB) performance. The gas control valve includes a pilot stage having a pilot valve, and a main stage having a main valve. The gas control valve responds to control signals supplied to the pilot stage and is configured such that for commands of relatively short duration, only the pilot valve responds. Conversely, for commands of relatively longer duration, the pilot valve and main valve both respond. | 2010-02-18 |
20100038566 | VALVE AND ACTUATOR ASSEMBLIES - The present application relates to valve and actuator assemblies. The valve actuator assemblies may include a capless valve actuating arrangement, include a replaceable passage defining member that includes seal members, include a valve member that is assembled in a valve chamber from an end of the valve body that is opposite an end that a piston is assembled in, and/or include a valve member that may be rotated in a valve body without affecting the ability of the valve member to perform its sealing functions. | 2010-02-18 |
20100038567 | SUCK-BACK VALVE - A suck-back valve having an open/close valve with a suck-back function is provided. The suck-back valve includes a suck-back chamber formed in a valve internal channel of the open/close valve, a piston shaft portion and an open/close pressuring member to apply pressure to a valve piece, bellows that accommodate the piston shaft portion inside and that are connected to the open/close pressuring member at one end and are supported by a casing at the other end, wherein a two-step operation is performed at the time of a closing operation of the valve piece, including a valve closing operation step in which the piston shaft portion moves to the fully closed position of the valve piece, and a suck-back operation step in which the piston shaft portion and the open/close pressuring member further move from the fully closed position of the valve piece to increase the volume of the suck-back chamber. | 2010-02-18 |
20100038568 | ELECTROMOTIVE REFRIGERANT CONTROL VALVE - An electromotive refrigerant control valve is disclosed, in which the refrigerant supplied from the condenser is supplied to the evaporator for the cooling chamber or the evaporator for the freezing chamber based on the four operation modes. The four operation modes are a cooling/freezing mode in which the refrigerant is concurrently supplied to the cooling chamber evaporator and the freezing chamber evaporator, a cooling mode in which the refrigerant is supplied to only the cooling chamber evaporator, and the refrigerant is not supplied to the freezing chamber evaporator, an idle mode in which the refrigerant is not concurrently supplied to the cooling chamber evaporator and the freezing chamber evaporator, and a freezing mode in which the refrigerant is supplied to only the freezing chamber evaporator, and the refrigerant is not supplied to the cooling chamber evaporator. | 2010-02-18 |
20100038569 | ELECTRIC CONTROL VALVE - An electric control valve provided in the present invention has a valve gate and a control actuator including a middle seat ( | 2010-02-18 |
20100038570 | Regulating valve particularly for regulating the flow of refrigeration fluids - A regulating valve has a valve body, with an inlet and an outlet for fluid, which are connected by a connecting opening, and a flow control device for the connecting opening, inserted in a seat formed in the valve body. The flow control device has a piston for controlling flow within the connecting opening which is functionally connected to an electric motor adapted to make it slide within a cylinder along a sliding axis, and a monolithic tubular jacket that surrounds, determining its coaxiality, the rotor of the electric motor and the flow control piston, further providing the cylinder. | 2010-02-18 |
20100038571 | Valve control unit, particularly pilot control unit for a pressure modulator of a commercial vehicle - The invention relates to a valve control unit, particularly for a pressure modulator of a commercial vehicle. Said valve control unit ( | 2010-02-18 |
20100038572 | POPPET VALVE - A poppet valve ( | 2010-02-18 |
20100038573 | Gas Injection Valve with Two Positions of Closure - Charge valve for gas, in particular for carbon dioxide, comprising a seat, drilled with a passage, a shaft movable inside the passage against the compression of a return spring bearing against the seat and an elastomeric seal compressed between the seat and the shaft to close the passage when the shaft is moved into a first closed position, called low-pressure position, wherein a thermoplastic seal comprising a polymer that is deformable but has a hardness higher than that of the elastomeric seal, is added onto the seat or onto the shaft to close the passage when the thermoplastic seal is compressed between the seat and the shaft in a second closed position, called high-pressure position, against an additional compression of the elastomeric seal. | 2010-02-18 |
20100038574 | VALVE ASSEMBLY - A valve assembly includes: a valve body defining an annular shoulder that is formed with an annular shoulder groove; a hollow ball member disposed in the valve body; a sealing unit including an O-ring received in the shoulder groove and protruding outwardly of the shoulder groove; a stem extending into the valve body to connect with the ball member and formed with an annular flange seated on the O-ring; an annular packing seated on the annular flange; and an annular pressing member defining an annular neck that cooperates with the annular shoulder to sandwich the annular flange, the O-ring and the annular packing therebetween. The pressing member is coupled adjustably to the valve body, and is adjustable to move toward and away from the O-ring. | 2010-02-18 |
20100038575 | SEAL ASSEMBLY FOR A SOURCE OF PRESSURIZED FLUID - A valve system includes a source of pressurized fluid comprising an orifice through which the pressurized fluid flows away from the source, and a poppet comprising a groove and a seal positioned in the groove, wherein the seal plugs the orifice when the poppet is in a closed position, and wherein the poppet and the seal move through the orifice against a flow of the pressurized fluid to allow the pressurized fluid to flow through the orifice and away from the source. The seal may include an O-ring. | 2010-02-18 |
20100038576 | MICROVALVE DEVICE WITH IMPROVED FLUID ROUTING - A microvalve device for controlling the supply of pressurized fluid to a load in a fluid circuit, and having multiple internal fluid conduits for providing pressure feedback. | 2010-02-18 |
20100038577 | Zero-Leak Variable Rate High Pressure Metering Valve - A high pressure metering valve has a valve element with a closing portion, a metering portion and a rapid return portion. The closing portion seats against a corner seat at the end of a valve bore in which the metering portion has a close sliding fit. When the element is unseated, a flow rate can be metered depending on the overlapping length of the metering portion in the valve bore. At the opposite end of the metering portion, the rapid return portion is undercut to be of smaller area than the metering portion to provide a full open state for rapid fluid return. | 2010-02-18 |
20100038578 | Quaternary ammonium salt, electrolyte, electrolyte solution and electrochemical device - A quaternary ammonium salt of the formula (1), electrolytic solution and electrochemical device using the salt | 2010-02-18 |
20100038579 | ANISOTROPIC CELLULAR ELASTOMERS - Cellular elastomer which is anisotropic, with anisotropy being defined by the compressive modulus in one of three orthogonal directions being greater than that in the other two directions by a factor of at least 1.5. | 2010-02-18 |
20100038580 | SOFT MAGNETIC POWDER - A powder magnetic core is provided for operating at high frequencies that is obtained by pressure forming an iron-based magnetic powder covered with an insulation film, which has a specific resistance less than 1000, preferably less than 2000, and most preferably less than 3000 μm, and a saturation magnetic flux density B above 1.5, preferably above 1.7, and most preferably above 1.9 (T). A method for the preparation of such cores as well as a powder which is suitable for the preparation also are provided. | 2010-02-18 |
20100038581 | MULTINARY SALT SYSTEM FOR STORING AND TRANSFERRING THERMAL ENERGY - Salt composition containing an amount of at least 10% by weight KNO | 2010-02-18 |
20100038582 | REFRIGERATOR OIL AND WORKING FLUID COMPOSITION FOR REFRIGERATOR - The working fluid composition for a refrigerating machine of the invention is characterized by comprising an ester of a polyhydric alcohol and a fatty acid with a content of a C5-C9 branched fatty acid of 50-100% by mole, and a fluoropropene refrigerant and/or trifluoroiodomethane refrigerant. The refrigerating machine oil of the invention is characterized by comprising an ester of a polyhydric alcohol and a fatty acid with a content of a C5-C9 branched fatty acid of 50-100% by mole, and by being used together with a fluoropropene refrigerant and/or trifluoroiodomethane refrigerant. | 2010-02-18 |
20100038583 | REFRIGERATOR OIL AND WORKING FLUID COMPOSITION FOR REFRIGERATOR - The refrigerating machine oil of the invention is characterized by comprising an ester of a polyhydric alcohol and a fatty acid with a C | 2010-02-18 |
20100038584 | Polishing Composition and Polishing Method Using the Same - A polishing composition for electrochemical mechanical polishing a surface of an object in which the polishing composition contains a phosphate electrolyte such as a potassium phosphate, a chelating agent such as a potassium citrate, a corrosion inhibitor such as benzotriazole, an oxidizing agent such as hydrogen peroxide, and a solvent such as water. The polishing composition preferably further contains abrasive particles such as colloidal silica particles. | 2010-02-18 |
20100038585 | PEARLESCENT COMPOSITION - A pearly luster composition containing a fatty acid glycol ester and water, and further containing any one selected from the group consisting of (1) a polyoxyalkylene nonionic surfactant and a fatty acid contained in an amount of from 0.3 to 3% by weight of the pearly luster composition, (2) a polyoxyalkylene nonionic surfactant and an aliphatic alcohol contained in an amount of from 0.3 to 3% by weight of the pearly luster composition, (3) a fatty acid monoglyceride contained in an amount of from 0.3 to 3% by weight of the pearly luster composition, and (4) an aliphatic ether contained in an amount of from 0.3 to 3% by weight of the pearly luster composition, as a crystallization additive. The pearly luster composition of the present invention is suitably used for shampoos, conditioners, body shampoos, liquid detergents, and the like. | 2010-02-18 |
20100038586 | METHOD OF FABRICATING SILICA-TITANIA NANOPOROUS COMPOSITE POWDER - Provided is a method of fabricating silica-titania nanoporous composite powder by controlling a pore size. In more particular, a method of fabricating silica-titania nanoporous composite powder, using a spraying and heating reactor including an ultrasonic droplet generator and a cylindrical electric furnace, comprises the steps of: generating droplets of a mixture suspension from a colloidal suspension prepared by mixing silica (SiO | 2010-02-18 |
20100038587 | BIFUNCTIONAL POLYMERIZABLE COMPOUND, LIQUID CRYSTAL COMPOSITION, OPTICAL ANISOTROPIC MATERIAL AND OPTICAL ELEMENT - A bifunctional polymerizable compound represented by the following formula: | 2010-02-18 |
20100038588 | Liquid Crystal Compound Having Lactone Ring, Liquid Crystal Composition, And Liquid Crystal Display Device - A nematic liquid crystal compound represented by any one of formulas (a-1) to (a-6): | 2010-02-18 |
20100038589 | LYOTROPIC LIQUID CRYSTALLINE MIXTURE, COATING LIQUID, AND OPTICAL ANISOTROPIC FILM - The lyotropic liquid crystalline mixture of the present invention comprises at least a first azo compound and a second azo compound in relation of constitutional isomers wherein the first azo compound and the second azo compound are the constitutional isomers different in a binding site of at least an azo group. The first azo compound is preferably an azo compound wherein the azo group is bonded to an ortho-position of a hydroxyl group of an aminonaphthol skeleton. The second azo compound is preferably an azo compound wherein the azo group is bonded to an ortho-position of an amino group of an aminonaphthol skeleton. | 2010-02-18 |
20100038590 | METHOD FOR PREPARING B-SIALON PHOSPHOR - There is provided a method for preparing a β-SiAlON phosphor capable of be controlled to show characteristics such as high brightness and desired particle size distribution. The method for preparing a β-SiAlON phosphor represented by Formula: Si | 2010-02-18 |
20100038591 | Liminous phosphor, fluorescent lamp, luminous display, and luminous molded product - There are provided a long persistent phosphor capable of keeping high persistent intensity and white persistence of especially satisfactory color purity after the phosphor is excited by ultraviolet irradiation and then the excited light is cut off, and a fluorescent lamp, a display item of long persistence and a formed product of long persistence in which the phosphor is used. | 2010-02-18 |
20100038592 | COMPOSITION AND LIGHT-EMITTING ELEMENT COMPRISING THE COMPOSITION - Disclosed is a composition comprising a compound having a pyrazine ring structure and a phosphorescent compound, wherein the compound having a pyrazine ring structure has a pyrazine ring structure represented by the general formula (1), (2) or (3): | 2010-02-18 |
20100038593 | Tubular Reactor With Jet Impingement Heat Transfer - A tubular reactor and method for producing a product mixture in a tubular reactor where the tubular reactor comprises an internal catalytic insert having orifices for forming fluid jets for impinging the fluid on the tube wall. Jet impingement is used to improve heat transfer between the fluid in the tube and the tube wall in a non-adiabatic reactor. The tubular reactor and method may be used for endothermic reactions such as steam methane reforming and for exothermic reactions such as methanation. | 2010-02-18 |
20100038594 | System and Method for Integrated Waste Storage - The present invention provides integrated bunker storage systems for waste streams based on the composition and characteristics of waste streams. In particular, the present invention provides a process for generating individual waste streams based on a set of material characteristics. According to the system and method of the present invention, individual waste streams from wastes stored in bunkers are mixed in a given feed ratio to generate a feed stock that will produce a desired output from a chemical conversion process, e.g., gasification. Optionally, composition data regarding the feed stock can be certified to a third party. | 2010-02-18 |
20100038595 | System and methods of dispersion of nanostructures in composite materials - Apparatus and methods according to various aspects of the present invention may operate in conjunction with composite matrix material and reinforcement material, such as nanostructures. The nanostructures may be evenly dispersed and/or aligned in the matrix material through application of an electromagnetic field, resulting in a nanocomposite material. In one embodiment, the nanocomposite material is suitable for large scale processing. | 2010-02-18 |
20100038596 | PROCESS FOR PRODUCING DISPERSION LIQUID OF INTRINSIC ELECTROCONDUCTIVE POLYMER IN ORGANIC SOLVENT - This invention provides a process for producing a dispersion liquid of an intrinsic electroconductive polymer in an organic solvent, comprising a deionization step of deionizing an aqueous colloid dispersion liquid of an intrinsic electroconductive polymer by a liquid feeding method to remove cations adsorbed on the intrinsic electroconductive polymer, a solvent displacement step of subjecting water in the aqueous colloid dispersion liquid after the deionization step to solvent displacement with an organic solvent (excluding N-methylpyrrolidone and dimethyl sulfoxide), and an additive treatment step of, after the solvent displacement step, adding N-methylpyrrolidone or dimethyl sulfoxide. This process can easily produce a dispersion liquid of an intrinsic electroconductive polymer in an organic solvent that can be used in various applications such as electrode materials, antistatic agents, ultraviolet absorbers, heat absorbers, electromagnetic wave absorbers, sensors, electrolytes for electrolytic capacitors, and electrodes for rechargeable batteries. | 2010-02-18 |
20100038597 | ELECTROACTIVE POLYMERS CONTAINING PENDANT PI-INTERACTING/BINDING SUBSTITUENTS, THEIR CARBON NANOTUBE COMPOSITES, AND PROCESSES TO FORM THE SAME - A composition of matter comprises a polymer with a fully conjugated backbone or a conjugated block with a plurality of binding groups connected to the backbone by a linking moiety. The binding groups permit a non-covalent binding to a graphitic surface such as a carbon nanotube. A composition of matter where an electroactive polymer with binding groups connected to a conjugated backbone through a linking moiety is bound to carbon nanotubes. Such compositions can be used for a variety of applications using electroactive materials. | 2010-02-18 |
20100038598 | SECURITY DEVICE WITH MULTIPLE AUTHENTICATION FEATURES - A security device comprising the following components:
| 2010-02-18 |
20100038599 | POLYMERIZABLE SEMICONDUCTORS, POLYMERS THEREOF, AND METHODS OF MAKING AND USING SAME - Disclosed are compounds comprising at least one semiconductor and/or photon absorber; and a polymerizable residue covalently bound thereto. In a further aspect, a disclosed polymer can be a polymer of a disclosed compound. In one aspect, a disclosed polymer can comprise at least one semiconductor and/or photon absorber covalently bound to one or more side-chains thereof. In a further aspect, a disclosed device can comprise a disclosed compound and/or a disclosed polymer made therefrom and/or a disclosed polymer. A device can, for example, comprise a photovoltaic cell. Also disclosed are methods for making and using the compounds, polymers, and devices. | 2010-02-18 |
20100038600 | ACTIVE OPTICAL ELEMENT, METHOD OF PRODUCING THE SAME - An active element that is based on an electret emulsion and that comprises particles of pre-polarized electret material as emulsion in neutral liquid and both poles of the particles are coloured with different colours. For producing a neutral carrier liquid for the active element liquid fluorine carbon is used. For producing electret material for the active element solid polymerised fluorine carbon or electret wax is used. The active element is used for producing visual matrix displays, indicators, surfaces and surface coatings that change colour by the application of a control voltage. | 2010-02-18 |
20100038601 | DURABLE TRANSPARENT CONDUCTORS ON POLYMERIC SUBSTRATES - A method of preparing a transparent conductor for application on a polymeric substrate is described. The method includes introducing a functional group onto a surface of the conductor to form a modified conductor, and mixing the modified conductor with a dispersant at slightly elevated temperatures to form a conductive material composition. The dispersant is at least bifunctional. The conductive material composition may then be applied to the polymeric substrate. The dispersant acts as a linker, bonding the transparent conductor and polymeric substrate such that they are fully integrated. | 2010-02-18 |
20100038602 | METHOD FOR PREPARING CARBON FIBRILS AND/OR NANOTUBES FROM A CARBON SOURCE INTEGRATED WITH THE CATALYST - The present invention relates to a method for preparing carbon fibrils and/or nanotubes from a carbon source integrated in the catalyst used for their preparation and a source of hydrocarbonated gas, as well as to the catalyst material and to the corresponding method. The catalyst material for preparing mono- or multi-leaved carbon fibrils and/or nanotubes includes one or more given multivalent transition metals and a hydrocarbonated solid organic substrate. | 2010-02-18 |
20100038603 | SILVER PARTICLE DISPERSION LIQUID AND PROCESS FOR PRODUCING THE SAME - A silver particle dispersion liquid comprising a silver particle powder having an average particle diameter (D | 2010-02-18 |
20100038604 | Nickel Paste - Nickel paste contains nickel powder, a resin binder and an organic solvent, wherein the nickel powder is a small amount sulfur nickel powder including less than 100 ppm sulfur. This provides the nickel paste that the change in viscosity due to sulfur included in the paste can be preferably restrained by using nickel powder including extremely small amount of sulfur. Limitation of sulfur to the extremely small amount causes superior stability, and then, since kinds of solvents and resin binders are not limited, the change in viscosity can be preferably restrained with using the solvent that is hard to cause the chemical attack on the green sheet as described above. Thus, nickel paste that is hard to cause the chemical attack and the change in viscosity can be provided. | 2010-02-18 |
20100038605 | TRANSPARENT CONDUCTIVE FILM, SINTERED BODY TARGET FOR TRANSPARENT CONDUCTIVE FILM FABRICATION, AND TRANSPARENT CONDUCTIVE BASE MATERIAL AND DISPLAY DEVICE USING THE SAME - A transparent conductive film which is amorphous, has a high transmittance of light in the visible region of short wavelengths, and is hard to beak with respect to bending is provided. The transparent conductive film is an amorphous oxide film composed of Ga, In, and O, in which a Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms, a resistivity ranges 1.2×10 | 2010-02-18 |
20100038606 | BLACK RESIN COMPOSITION, RESIN BLACK MATRIX, COLOR FILTER AND LIQUID CRYSTAL DISPLAY - A black resin composition capable of forming a black matrix having high OD value and high adhesion as well as high resistance is disclosed. The black resin composition is a black resin composition comprising at least a light shielding agent, a resin and a solvent, which light shielding agent contains at least titanium nitride compound particles, wherein the angle of diffraction 2θ of the peak originated from (200) plane of the titanium nitride compound particles when CuKα line is used as the X-ray source is not less than 42.5° and not more than 42.8°. Using this black resin composition allows a thin resin black matrix having a high light shielding property and high resistance to be readily attained. | 2010-02-18 |
20100038607 | APPARATUS FOR NAILING T-NUTS - There is provided an apparatus for nailing t-nut. The apparatus of the invention has a first nailing device. The first nailing device has a push bar; a rotation motion transmission mechanism; a first servo motor for moving the push bar up and down by means of the rotation motion transmission mechanism; a retaining portion to hold a t-nut; an alignment supplier to supply the t-nut to the retaining portion; and a receiving portion to hold a board. The apparatus further has a control device to control the rotation of the servo motor. The t-nut is release by the retaining portion when the push bar moves down. The upper end of the to-nut is pushed by the push bar. The push bar moves down at a speed faster than that of free fall of the t-nut when the retaining portion releases the t-nut, so as to nail the t-nut into the board. | 2010-02-18 |
20100038608 | CLAW HAMMER WITH NAIL EJECTOR - An improved nail ejecting apparatus in the form of a conventional claw hammer is disclosed. The improved claw hammer contains a wedge located between the two blades of the claw section of the hammer. The wedge is connected to a spring which makes contact with the in side of the hammer head. As nails are removed, the spring is compressed. After a nail is removed from a material, the force caused by the spring ejected the nails from the claw section of the hammer. | 2010-02-18 |
20100038609 | HAMMERHEAD WITH LATERAL NAIL-PULLING GROOVE - A hammerhead having a claw, two cheeks and a V-groove at each of two opposite lateral sides of the claw for pulling nails sideways and a side gap between each of the two cheeks and the claw for receiving the head of the nail to be pulled sideways with the V-groove. | 2010-02-18 |
20100038610 | DRAWWORKS HAVING ANNULUS ROTATING UNION WITH BRAKE COOLING SYSTEM - A drawworks having a drum spool, a drum shaft concentrically supported by the drum spool, a rotary union, brake assemblies and a brake cooling system which circulates a cooling fluid through the brake assemblies to thereby reduce the operating temperature of the brake assemblies. The brake cooling system includes a cooling fluid passage that extends through the drum spool, the rotary union and the brake assemblies. | 2010-02-18 |
20100038611 | WIRE TERMINATION DEVICE - A wire termination device ( | 2010-02-18 |
20100038612 | FENCING SYSTEM FOR CAMPFIRE - A fencing system for a campfire includes a plurality of holding members, a plurality of posts and a plurality of fencing members. Each holding member of the plurality of holding members includes a base member and a lip extending upwardly from a portion of the base member defining a cavity between the base member and the lip. The plurality of holding members is adapted to be placed on a surface around the campfire. Further, each post of the plurality of posts is adapted to be disposed vertically into the cavity of the each holding member of the plurality of holding members. Furthermore, each fencing member of the plurality of fencing members is disposed horizontally between a pair of posts of the plurality of posts and the each fencing member is removably attached to the pair of posts. | 2010-02-18 |
20100038613 | Fence EZ hardware - Attachment hardware to fasten a variety of fencing cross rails with various cross sections, such as round, square, hexagonal and the like, depending upon the needs of utility and decor, to fence posts, to hold in place fence slats, wire, panels and other common fencing materials, especially where the ground is uneven. | 2010-02-18 |
20100038614 | METHODS OF FORMING A PHASE CHANGE MATERIAL, A PHASE CHANGE MATERIAL, A PHASE CHANGE RANDOM ACCESS MEMORY DEVICE INCLUDING THE PHASE CHANGE MATERIAL, AND A SEMICONDUCTOR STRUCTURE INCLUDING THE PHASE CHANGE MATERIAL - Methods of forming a phase change material are disclosed. The method includes forming a chalcogenide compound on a substrate and simultaneously applying a bias voltage to the substrate to alter the stoichiometry of the chalcogenide compound. In another embodiment, the method includes positioning a substrate and a deposition target having a first stoichiometry in a deposition chamber. A plasma is generated in the deposition chamber to form a phase change material on the substrate. The phase change material has a stoichiometry similar to the first stoichiometry. A bias voltage is applied to the substrate to convert the stoichiometry of the phase change material to a second stoichiometry. A phase change material, a phase change random access memory device, and a semiconductor structure are also disclosed. | 2010-02-18 |
20100038615 | NONVOLATILE STORAGE DEVICE - An element structure for a resistance variable type nonvolatile storage device is provided in which enables a reduction in variation in operating voltage and in a leakage current in an off state of an element. The nonvolatile storage device is characterized by including a lower electrode, an upper electrode, and a laminated structure in which at least one amorphous insulating layer and at least one resistance variation layer are laminated between the lower electrode and the upper electrode. | 2010-02-18 |
20100038616 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND PRODUCING METHOD THEREOF - A cell array includes a memory cell region in which memory cells are formed and a peripheral region that is provided around the memory cell region. In the memory cell region, first lines are extended in parallel with a first direction, and the first lines are repeatedly formed at first intervals in a second direction orthogonal to the first direction. In the peripheral region, each of the first lines located at (4n−3)-th (n is a positive integer) and (4n−2)-th positions in the second direction from a predetermined position has a contact connecting portion on one end side in the first direction of the first line. In the peripheral region, each of the first lines located at (4n−1)-th and 4n-th positions in the second direction from the predetermined position has the contact connecting portion on the other end side in the first direction of the first line. The contact connecting portion is formed so as to contact a contact plug extended in a laminating direction. | 2010-02-18 |
20100038617 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device having a first wiring layer which is provided on a first insulator, and which extends in a first direction, and a non-volatile memory cell which is provided in a pillar shape on the first wiring layer, and which includes a non-ohmic element and variable resistance element connected in series. The resistance value of the variable resistance element changes in accordance with a voltage or current applied thereto. A barrier layer is provided on the memory cell and is configured in an in-plane direction. A conductive layer is provided on the barrier layer and is configured in an in-plane direction. A second insulator is provided on the first insulator and covers side surfaces of the memory cell, the barrier layer, and the conductive layer. A second wiring layer is provided on the conductive layer and extends in a second direction. | 2010-02-18 |
20100038618 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The invention provides a novel memory for which process technology is relatively simple and which can store multivalued information by a small number of elements. A part of a shape of the first electrode in the first storage element is made different from a shape of the first electrode in the second storage element, and thereby voltage values which change electric resistance between the first electrode and the second electrode are varied, so that one memory cell stores multivalued information over one bit. By partially processing the first electrode, storage capacity per unit area can be increased. | 2010-02-18 |
20100038619 | VARIABLE RESISTANCE ELEMENT, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE - A variable resistance element includes a first conductive portion; an insulating film pattern provided on the first conductive portion; a level difference with respect to the upper surface of the first conductive portion, the level difference being formed of the insulating film pattern; a variable resistance film provided on a side surface of the level difference and having contact with the upper surface of the first conductive portion on the lower-end side of the side surface of the level difference; and a second conductive portion having contact with the variable resistance film on the upper-end side of the side surface of the level difference. | 2010-02-18 |
20100038620 | INTEGRATION METHODS FOR CARBON FILMS IN TWO- AND THREE-DIMENSIONAL MEMORIES AND MEMORIES FORMED THEREFROM - Methods of forming memory cells are disclosed which include forming a pillar above a substrate, the pillar including a steering element and a memory element, and performing one or more etches vertically through the pillar to form multiple memory cells. Memory cells formed from such methods, as well as numerous other aspects are also disclosed. | 2010-02-18 |
20100038621 | Four-Terminal Reconfigurable Devices - Reconfigurable devices and methods for the fabrication thereof are provided. In one aspect, a reconfigurable device is provided. The reconfigurable device comprises a substrate; a first dielectric layer on the substrate; a conductive layer recessed into at least a portion of a side of the first dielectric layer opposite the substrate; at least one second dielectric layer over the side of the first dielectric layer opposite the substrate, so as to cover the conductive layer; a heater within the second dielectric layer; at least one programmable via extending through the second dielectric layer, extending through and surrounded by the heater and in contact with the conductive layer, the programmable via comprising at least one phase change material; a capping layer over the programmable via; a first conductive via and a second conductive via, each extending through the second dielectric layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive layer. | 2010-02-18 |
20100038622 | CONNECTIBLE NANOTUBE CIRCUIT - Carbon nanotube template arrays may be edited to form connections between proximate nanotubes and/or to delete undesired nanotubes or nanotube junctions. | 2010-02-18 |
20100038623 | METHODS AND APPARATUS FOR INCREASING MEMORY DENSITY USING DIODE LAYER SHARING - Methods of forming memory cells are disclosed which include forming a pillar above a substrate, the pillar including a steering element and a memory element, and performing one or more etches vertically through the memory element, but not the steering element, to form multiple memory cells that share a single steering element. Memory cells formed from such methods, as well as numerous other aspects are also disclosed. | 2010-02-18 |
20100038624 | MEMORY DEVICE HAVING HIGHLY INTEGRATED CELL STRUCTURE AND METHOD OF ITS FABRICATION - In an embodiment, a memory device, with a highly integrated cell structure, includes a mold insulating layer disposed on a semiconductor substrate. At least one conductive line is disposed on the mold insulating layer. Data storage elements self-aligned with the conductive line are interposed between the conductive line and the mold insulating layer. In this case, each of the data storage elements may include a resistor pattern and a barrier pattern, which are sequentially stacked, and the resistor pattern may be self-aligned with the barrier pattern. | 2010-02-18 |
20100038625 | NONVOLATILE NANOTUBE PROGRAMMABLE LOGIC DEVICES AND A NONVOLATILE NANOTUBE FIELD PROGRAMMABLE GATE ARRAY USING SAME - Field programmable device (FPD) chips with large logic capacity and field programmability that are in-circuit programmable are described. FPDs use small versatile nonvolatile nanotube switches that enable efficient architectures for dense low power and high performance chip implementations and are compatible with low cost CMOS technologies and simple to integrate. | 2010-02-18 |
20100038626 | SEMICONDUCTOR NANOPARTICLE AGGREGATE, METHOD FOR PRODUCING THE SAME, AND BIOLOGICAL SUBSTANCE LABELING AGENT UTILIZING THE SAME - This invention provides a semiconductor nanoparticle aggregate comprising three or more types of semiconductor nanoparticles, which are different from each other in diameter, have a narrow particle size distribution, and are different from each other in maximum luminous wavelength of an emission spectrum in a wavelength region of 380 nm to 650 nm, a process for producing the semiconductor nanoparticle aggregate, and a biological substance labeling agent utilizing the semiconductor nanoparticle aggregate. The semiconductor nanoparticle aggregate comprises three or more types of semiconductor nanoparticles which have an identical chemical composition, are different from each other in particle diameter and fall within a particle diameter range of 1.8 to 4 nm and are different from each other in maximum luminous wavelength of an emission spectrum in a wavelength range of 380 to 650 nm. The semiconductor nanoparticle aggregate is characterized in that the difference in maximum luminous wavelength among three or more types of semiconductor nanoparticles constituting the semiconductor nanoparticle aggregate is in the range of 20 to 100 nm. | 2010-02-18 |
20100038627 | METHOD FOR FABRICATING CARBON NANOTUBE TRANSISTORS ON A SILICON OR SOI SUBSTRATE - A method of forming a single wall thickness (SWT) carbon nanotube (CNT) transistor with a controlled diameter and chirality is disclosed. A photolithographically defined single crystal silicon seed layer is converted to a single crystal silicon carbide seed layer. A single layer of graphene is formed on the top surface of the silicon carbide. The SWT CNT transistor body is grown from the graphene layer in the presence of carbon containing gases and metal catalyst atoms. Silicided source and drain regions at each end of the silicon carbide seed layer provide catalyst metal atoms during formation of the CNT. The diameter of the SWT CNT is established by the width of the patterned seed layer. A conformally deposited gate dielectric layer and a transistor gate over the gate dielectric layer complete the CNT transistor. CNT transistors with multiple CNT bodies, split gates and varying diameters are also disclosed. | 2010-02-18 |
20100038628 | CHEMICAL DOPING OF NANO-COMPONENTS - A method is provided for doping nano-components, including nanotubes, nanocrystals and nanowires, by exposing the nano-components to an organic amine-containing dopant. A method is also provided for forming a field effect transistor comprising a nano-component that has been doped using such a dopant. | 2010-02-18 |
20100038629 | Anisotropic Semiconductor Film and Method of Production Thereof - The present invention relates generally to the field of macro- and microelectronics with the potential for large-scale integration, optics, communications, and computer technology and particularly to the materials for these and other related fields. The present invention provides an anisotropic semiconductor film on a substrate, comprising at least one solid layer of material that comprises predominantly planar graphene-like carbon-based structures and possesses anisotropy of conductivity, and wherein the layer thickness is in a range from approximately 5 nm to 1000 nm. | 2010-02-18 |
20100038630 | Semiconducting siloxane compositions for thin film transistor devices,and making and using the same - Semiconducting siloxane compositions and methods for manufacturing and use thereof in preparing organic thin-film transistors (OTFTs) are described. The semiconducting siloxane compositions can be crosslinked products of polymeric/monomeric compositions that include silane-derivatized crosslinkable organic p-type compounds and p-type semiconducting polymers. | 2010-02-18 |
20100038631 | ELECTRONIC DEVICE COMPRISING SEMICONDUCTING POLYMERS - An electronic device comprises a semiconducting polymer of Formula (I): | 2010-02-18 |
20100038632 | ELECTROLUMINESCENT DEVICE - An OLED with a donor which is doped metal quinolate in which the metal is a transition metal in the four or five valent state. | 2010-02-18 |
20100038633 | Organic light emitting diode - Provided is an organic light emitting diode including: a first electrode; a second electrode; an organic layer between the first electrode and the second electrode; and a luminous efficiency improvement layer disposed on a surface of the first electrode facing away from the organic layer or a surface of the second electrode facing away from the organic layer, wherein the luminous efficiency improvement layer includes a porphyrazin derivative, a phthalocyanine derivative, a naphthalocyanine derivative, or a combination of at least two compounds of the foregoing. | 2010-02-18 |
20100038634 | LIGHT EMITTING DEVICE MATERIAL AND LIGHT EMITTING DEVICE - A light emitting device material comprises a pyrene compound represented by formula (1) below. Also disclosed is a light emitting device using such a material. (R | 2010-02-18 |
20100038635 | Organic electroluminescent display device and manufacturing method of organic electroluminescent display device - The present invention provides a top-emission-type organic EL display device. In a top-emission-type organic EL display device which includes organic EL elements each of which is formed by stacking a reflective lower electrode, a function layer and a light-transmissive upper electrode in order, the upper electrode contains a plurality of fine particles which are made of a material different from a material of the upper electrode. The fine particles are preferably made of silica. A portion of the upper electrode may be provided below the fine particles and a portion of the upper electrode may be provided above the fine particles. | 2010-02-18 |
20100038636 | ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE HAVING THE ORGANIC THIN FILM TRANSISTOR - There have been problems in that a dedicated apparatus is needed for a conventional method of manufacturing an organic thin film transistor and in that: a little amount of an organic semiconductor film is formed with respect to a usage amount of a material; and most of the used material is discarded. Further, apparatus maintenance such as cleaning of the inside of an apparatus cup or chamber has needed to be frequently carried out in order to remove the contamination resulting from the material that is wastefully discarded. Therefore, a great cost for materials and man-hours for maintenance of apparatus have been required. In the present invention, a uniform organic semiconductor film is formed by forming an aperture between a first substrate for forming the organic semiconductor film and a second substrate used for injection with an insulating film formed at a specific spot and by injecting an organic semiconductor film material into the aperture due to capillarity to the aperture. The insulating film formed at the specific spot enables formation of the organic semiconductor film with high controllability. Further, the insulating film can also serve as a spacer that holds the aperture, that is, an interval (gap) between the substrates. | 2010-02-18 |
20100038637 | Composite Comprising Array of Needle-Like Crystal, Method for Producing the Same, Photovoltaic Conversion Element, Light Emitting Element, and Capacitor - A composite of a base and an array of needle-like crystals formed on the surface of the base is provided, in which the base side and the opposite side to the base with respect to the array can be isolated in a satisfactory manner. A composite | 2010-02-18 |
20100038638 | N-type Doping in Metal Oxides and Metal Chalcogenides by Electrochemical Methods - Methods and systems for electrochemically depositing doped metal oxide and metal chalcogenide films are disclosed. An example method includes dissolving a metal precursor into a solution, adding a halogen precursor to the solution, and applying a potential between a working electrode and a counter electrode of an electrochemical cell to deposit halogen doped metal oxide or metal chalcogenide onto a substrate. Another example method includes dissolving a zinc precursor into a solution, adding an yttrium precursor to the solution, and applying a potential between a working electrode and a counter electrode of an electrochemical cell to deposit yttrium doped zinc oxide onto a substrate. Other embodiments are described and claimed. | 2010-02-18 |
20100038639 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film. | 2010-02-18 |
20100038640 | ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - According to an embodiment of the invention, an array substrate includes a first test line, a second test line, a first source line group, a second source line group, a plurality of gate lines and a switching device. The first test line extends along a first direction. The second test line is substantially in parallel with the first test line. The first source line group that extends along a second direction that is substantially perpendicular to the first direction, and electrically connected to the first test line. The second source line group extends along the second direction and is electrically connected to the second test line. Each of the gate lines extends along the first direction. The switching device is formed on a region surrounded by the first source line, the second source line and the gate lines. Therefore, defects induced by static electricity generated during manufacturing process are reduced. | 2010-02-18 |
20100038641 | THIN FILM FIELD EFFECT TRANSISTOR - A thin film field effect transistor has at least a gate electrode | 2010-02-18 |
20100038642 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor (TFT) array panel includes a substrate, a first signal line disposed on the substrate, a first insulating layer disposed on the first signal line, a second signal line disposed on the first insulating layer, a second insulating layer disposed on the second signal line, the second insulating layer comprising an organic layer, a connection bridge disposed on the second insulating layer, the connection bridge connecting the first signal line with the second signal line, an overcoat disposed on the connection bridge, a first contact hole formed in the first and second insulating layers, the first contact hole exposing a portion of the first signal line, and a second contact hole formed in the second insulating layer, the second contact hole exposing a portion of the second signal line, wherein the connection bridge connects the first and second signal lines through the first and second contact holes. | 2010-02-18 |
20100038643 | Organic light emitting display and manufacturing method of the same - Provided are an organic light emitting display device and a method for manufacturing the same. The organic light emitting display device comprises a transistor on a substrate, a cathode on the transistor and connected to a source or a drain of the transistor, a bank layer on the cathode and having an opening, a metal buffer layer on the cathode, an organic light emitting layer on the metal buffer layer, and an anode on the organic light emitting layer. | 2010-02-18 |
20100038644 | THIN FILM TRANSISTOR DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor display panel includes an insulating substrate, gate lines and data lines disposed intersecting each other on the insulating substrate so as to be electrically insulated from each other, common lines provided on the insulating substrate in parallel to the gate lines, a gate insulating film disposed on the gate lines and the common lines, contact holes disposed passing through the gate insulating film disposed on the common lines, a plurality of common electrodes electrically connected to the common lines through the contact holes and arranged in parallel to each other, and a plurality of pixel electrodes arranged in parallel to the common electrodes. The thickness of the common electrode and the pixel electrode is smaller than that of the data line. | 2010-02-18 |
20100038645 | Display Element and Method of Manufacturing the Same - A display element and a method of manufacturing the same are provided. The method comprises the following steps: forming a first patterned conducting layer with a gate on a substrate and a dielectric layer thereon; forming a patterned semiconductor layer on the dielectric layer, wherein the patterned semiconductor layer has a channel region, a source and a drain, and wherein the source and the drain lie on the opposite sides of the channel region; selectively depositing a barrier layer, which only wraps the patterned semiconductor layer; forming a second patterned conducting layer on the barrier layer and above the source and the drain. In the display element manufactured by the method, the barrier layer only wraps the patterned semiconductor layer. | 2010-02-18 |
20100038646 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY UNIT - A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region. | 2010-02-18 |
20100038647 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor substrate according to one or more embodiments of the present invention includes a gate line formed on a substrate, a data line that is insulated from and intersects the gate line, a thin film transistor connected to the gate line and the data line, a barrier rub formed on the thin film transistor and partitioning a plurality of first openings, a reflecting electrode formed in each of the first openings, and a pixel electrode formed on the reflecting electrode and that is electrically connected to the thin film transistor. | 2010-02-18 |
20100038648 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array panel including a substrate; a display area signal line; a display area thin film transistor; a peripheral area signal line; a black matrix disposed on the display area signal line, the display area thin film transistor, and the peripheral area signal line, the black matrix including a first and a second contact holes exposing the peripheral area signal line; a protrusion member disposed on the peripheral area signal line, the protrusion member overlapping the peripheral area signal line; a transparent connector disposed on the black matrix and within the peripheral area, wherein the transparent connector contacts the peripheral area signal line through at least one of the first and the second contact holes and includes a protrusion within at least one of the first and the second contact holes which corresponds to the protrusion member; and a pixel electrode. | 2010-02-18 |
20100038649 | MOLD, MANUFACTURING METHOD OF MOLD, METHOD FOR FORMING PATTERNS USING MOLD, AND DISPLAY SUBSTRATE AND DISPLAY DEVICE MANUFACTURED BY USING METHOD FOR FORMING PATTERNS - The present invention relates to a mold, a manufacturing method of the mold, and a method of forming patterns using the mold. The mold may include a main body having a convex portion and a recess portion, and a polymer layer formed over the main body by processing a surface of the main body with a high molecular weight material through a surface treatment. | 2010-02-18 |
20100038650 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device includes first and second substrates, and first and second alignment keys. The first and second substrates have first and second display regions and first and second peripheral regions, respectively. The first alignment key is disposed in the first peripheral region of the first substrate. The first alignment key includes a first pattern and a second pattern. The second alignment key is disposed in the second peripheral region of the second substrate such that the second alignment key faces the first alignment key. As a result, first alignment key may be formed through a procedure of forming the pixel electrode. Therefore, there exists no deviation between the first alignment key and the pixel electrode and the first alignment key may be easily detected because of the first pattern that is opaque, so that misalignment is prevented. | 2010-02-18 |
20100038651 | SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR CIRCUIT MADE FROM SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF - In the present invention, a semiconductor film is formed through a sputtering method, and then, the semiconductor film is crystallized. After the crystallization, a patterning step is carried out to form an active layer with a desired shape. The present invention is also characterized by forming a semiconductor film through a sputtering method, subsequently forming an insulating film. Next, the semiconductor film is crystallized through the insulating film, so that a crystalline semiconductor film is formed. According this structure, it is possible to obtain a thin film transistor with a good electronic property and a high reliability in a safe processing environment. | 2010-02-18 |
20100038652 | LIGHT EMITTING ELEMENT AND METHOD OF MAKING SAME - A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (Al | 2010-02-18 |
20100038653 | DIAMOND ELECTRONIC DEVICES AND METHODS FOR THEIR MANUFACTURE - The present invention relates to a diamond electronic device comprising a functional interface between two solid materials, wherein the interface is formed by a planar first surface of a first layer of single crystal diamond and a second layer formed on the first surface of the first diamond layer, the second layer being solid, non-metallic and selected from diamond, a polar material and a dielectric material, and wherein the planar first surface of the first layer of single crystal diamond has an Rq of less than 10 nm and has at least one of the following characteristics: (a) the first surface is an etched surface; (b) a density of dislocations in the first diamond layer breaking the first surface is less than 400 cm | 2010-02-18 |
20100038654 | PHOTO SENSOR AND PORTABLE ELECTRONIC APPARATUS - A photo sensor including a gate, a first insulator, a semiconductor layer, a first electrode pattern layer, a second electrode pattern layer, a second insulator and a transparent electrode is provided. The gate is disposed on the substrate. The first insulator covers the gate and a portion of the substrate. The semiconductor layer is disposed on the first insulator above the gate. Moreover, there is a space between the first electrode pattern layer and the second electrode pattern layer located on the semiconductor layer. The second insulator covers a portion of the semiconductor layer, the first electrode pattern layer and the second electrode pattern layer. The transparent electrode is disposed on the second insulator above the semiconductor layer and corresponds to the first electrode pattern layer. The transparent electrode is electrically connected to the first electrode pattern layer, and a portion of the transparent electrode is within the space. | 2010-02-18 |
20100038655 | Reflective Layer for Light-Emitting Diodes - A system and method for manufacturing a light-generating device is described. A preferred embodiment comprises a plurality of LEDs formed on a substrate. Each LED preferably has spacers along the sidewalls of the LED, and a reflective surface is formed on the substrate between the LEDs. The reflective surface is preferably located lower than the active layer of the individual LEDs. | 2010-02-18 |
20100038656 | Nitride LEDs based on thick templates - Thick HVPE templates of nitrides enhance both the growth conditions and resulting device performance of LEDs, power devices, solar cells, and other electrical elements. The use of HVPE templates greater than 15 microns allows for increased incorporation of indium and/or aluminum in alloys with gallium nitride relative to a thinner MOCVD template for a given reactor growth temperature. The use of these thicker templates further allows the formation of epitaxial chips. The use of this approach forms more efficient nitride devices between 520 nm and 1.7 microns. These devices may be used for both emitting and absorbing applications such as LEDs and solar cells. | 2010-02-18 |
20100038657 | LIGHTING APPARATUS - A lighting apparatus is provided with a plurality of light-emitting devices, a substrate, a blind member, and a reflector. The reflector is formed with a plurality of reflective surfaces corresponding to the light-emitting devices, individually. The shielding angle at which light emitted from that one of the light-emitting devices which is located on the outermost periphery is intercepted by the reflective surface corresponding to the outermost light-emitting device is greater than shielding angles at which light emitted from the light-emitting devices located inside the outermost light-emitting device is intercepted by the reflective surfaces corresponding to the inside light-emitting devices. | 2010-02-18 |
20100038658 | Polymer light-emitting diode and fabrication of same by resonant infrared laser vapor deposition - A polymeric light-emitting diode (PLED) and methods of making same. In one embodiment, the PLED comprises a substrate, a layer of a first conductive material formed on a surface of the substrate, a layer of a conductive polymeric material deposited on the layer of the first conductive material, a layer of a luminescent polymeric material deposited on the layer of the conductive polymeric material, and a layer of a second conductive material formed on the layer of the luminescent polymeric material, wherein at least one of the layer of the conductive polymeric material and the layer of the luminescent polymeric material is deposited by the laser vapor deposition (LVD). | 2010-02-18 |
20100038659 | Omnidirectional Reflector - A system and method for manufacturing an LED is provided. A preferred embodiment includes a substrate with a distributed Bragg reflector formed over the substrate. A photonic crystal layer is formed over the distributed Bragg reflector to collimate the light that impinges upon the distributed Bragg reflector, thereby increasing the efficiency of the distributed Bragg reflector. A first contact layer, an active layer, and a second contact layer are preferably either formed over the photonic crystal layer or alternatively attached to the photonic crystal layer. | 2010-02-18 |
20100038660 | TWO-PHASE COOLING FOR LIGHT-EMITTING DEVICES - System, method, and apparatus for two phase cooling in light-emitting devices are disclosed. In one aspect of the present disclosure, an apparatus includes a light-emitting device and a two-phase cooling apparatus coupled to the light-emitting device. The coupling of the two-phase cooling apparatus and the light-emitting device is operatively configured such that thermal coupling between the light-emitting device and the two-phase cooling apparatus enables, when, in operation, heat generated from the light-emitting device to be absorbed by a substance of a first phase in the two-phase cooling apparatus to convert the substance to a second phase. | 2010-02-18 |
20100038661 | Light-Emitting Diode With Non-Metallic Reflector - A light-emitting diode (LED) device is provided. The LED device has a substrate, a reflective structure over the substrate, and an LED structure over the reflective structure. The reflective structure is formed of non-metallic materials. In one embodiment, the reflective structure is formed of alternating layers of different non-metallic materials having different refractive indices. In another embodiment, the reflective structure is formed of alternating layers of high-porosity silicon and low-porosity silicon. In yet another embodiment, the reflective structure is formed of silicon dioxide, which may allow the use of fewer layers. The reflective structure may be formed directly on the same substrate as the LED structure or formed on a separate substrate and then bonded to the LED structure. | 2010-02-18 |
20100038662 | LIGHT EMITTING DEVICE AND PRODUCTION METHOD OF SAME - A light emitting device, and a production method thereof, is provided having for a light source thereof a vertical geometry light emitting diode, that allows a large current to flow through the vertical geometry light emitting diode and takes into consideration the dissipation of heat occurring at that time or the expansion and contraction of a metal member due to thermal stress caused by that heat. The light emitting device at least comprises a package having a plurality of mutually separated package electrodes; a vertical geometry light emitting diode having a light emitting layer positioned between a p-type semiconductor layer and an n-type semiconductor layer, an upper partial electrode of the uppermost layer, and a lower electrode of the lowermost layer, wherein the lower electrode is joined onto one of the package electrodes; and, a conductive connecting member that connects the upper electrode of the vertical geometry light emitting diode with another of package electrodes; wherein the junction between said one of the package electrodes and the lower electrode, the junction between the upper electrode and the conductive connecting member, and the junction between the conductive connecting member and said other of package electrodes are made with solder. | 2010-02-18 |
20100038663 | LED LIGHT RECYCLING FOR LUMINANCE ENHANCEMENT AND ANGULAR NARROWING - Some embodiments provide a luminance-enhanced light source. These embodiments include a thin-film LED mounted on a substrate and with a defined upper surface approximately hemispherically emitting light, with the upper surface being diffusely transmissive, a lower first layer of identically defined linear prismatic film separated from the upper surface by a non-evanescent air gap so as to cover the upper surface, a upper second layer of linear prismatic film, identical to but oriented orthogonally to the first layer, and a circumferential vertical reflective wall bordering on both of the first and second layers and extending in height from the substrate to the top of the second layer. | 2010-02-18 |