07th week of 2013 patent applcation highlights part 13 |
Patent application number | Title | Published |
20130037724 | CHARGED PARTICLE BEAM DRAWING APPARATUS AND CHARGED PARTICLE BEAM DRAWING METHOD - A charged particle beam drawing apparatus of an embodiment includes: a drawing unit to perform drawing on a workpiece on a stage by using a charged particle beam; multiple marks located on the stage and having different heights; an irradiation position detector to, when any of the marks is irradiated with the charged particle beam, detect an irradiation position of the charged particle beam on a mark surface of the mark; a drift-amount calculation unit to calculate a drift amount of the charged particle beam on the mark surface by using the irradiation position; a drift-amount processing unit to obtain a drift amount on a workpiece surface by using the drift amounts on at least two of the mark surfaces; and a drawing controller to correct an is irradiation position of the charged particle beam by using the drift amount on the workpiece surface. | 2013-02-14 |
20130037725 | GRID PROVIDING BEAMLET STEERING - A grid assembly coupled to a discharge chamber of an ion beam source is configured for steering ion beamlets emitted from the discharge chamber at circularly asymmetrically determined steering angles. The grid assembly includes at least first and a second grid with a substantially circular pattern of holes, wherein each grid comprises holes positioned adjacent to one another. A plurality of the holes of the second grid is positioned with offsets relative to corresponding holes in the first grid. Due to the offsets in the holes in the second grid, ions passing through the offset holes are electrostatically attracted towards the closest circumferential portion of the downstream offset holes. Thus, the trajectories of ions passing through the offset holes are altered. The beamlet is steered by predetermined asymmetric angles. The predetermined steering angles are dependent upon the hole offsets, voltage applied to the grids, and the distance between the grids. | 2013-02-14 |
20130037726 | COMPACT ANALYZER WITH SPATIAL MODULATION AND MULTIPLE INTENSITY MODULATED EXCITATION SOURCES - A compact analyzer includes a flow cell having a flow channel through which a sample is made to pass. First and second light sources are arranged to emit first and second excitation light into first and second overlapping portions of the flow channel, respectively. The first excitation light stimulates a first light emission from particles of a first particle type that may be present in the sample; the second excitation light stimulates a second light emission from particles of a second particle type. A detector receives the first and second light emission from the corresponding particles present in the sample in a detection portion of the flow channel, and provides a detector output based on the received light emission. The light sources are modulated at different frequencies so that a frequency analysis of the detector output can provide separate information about the first and second particle types. | 2013-02-14 |
20130037727 | FLUORESCENCE SENSOR - A fluorescence sensor includes a silicon substrate on which a PD element that converts fluorescence into an electric signal is formed, an LED substrate having a first principal plane on which an LED element that generates excitation light is formed, a reflective film that averages a light amount distribution of the excitation light radiated from a second principal plane of the LED substrate, and an indicator layer that receives the excitation light averaged by the reflective film and generates the fluorescence having a light amount corresponding to an analyte amount. | 2013-02-14 |
20130037728 | PARTICLE ANALYZER WITH SPATIAL MODULATION AND LONG LIFETIME BIOPROBES - An analyzer includes a flow cell having a flow channel through which a sample passes. A light source excites at least a first particle type in the sample in one or more excitation region(s), and a detector detects light emitted by the excited particle. A spatial filter defines detection regions, wherein light emitted by the particle is transmitted to the detector, and interspersed shielded regions, wherein such light is at least partially blocked from reaching the detector. The light emitted by the excited particle has a response time τ | 2013-02-14 |
20130037729 | Determining the Distribution of a Substance by Scanning with a Measuring Front - For determining the distribution of a substance, a measuring front is formed of a first and a second optical signal. Intensities of the first and second optical signals, over a depth of the measuring front which is smaller than the diffraction limit at the wavelengths of the first and second optical signals, increase so steeply that a portion of the substance in a measurement state in which a measurement signal is available from the substance increases from essentially zero due to transferring the substance by means of the first optical signal into the measurement state, and decreases to essentially zero again due to transferring the substance by means of the second optical signal back out of the measurement state. The measuring front is moved over a measurement region. The measurement signal is recorded for different positions of the measuring front in the measurement region and assigned to these positions. | 2013-02-14 |
20130037730 | Network architecture for lithography machine cluster - The invention relates to a clustered substrate processing system comprising a plurality of lithography elements. Each lithography element is arranged for independent exposure of substrates according to pattern data, and comprises a plurality of lithography subsystems, a control network arranged for communication of control information between the lithography subsystems and at least one element control unit, the element control unit arranged to transmit commands to the lithography subsystems and the lithography subsystems arranged to transmit responses to the element control unit, and a data network arranged for communication of data logging information from the lithography subsystems to at least one data network hub, the lithography subsystems arranged to transmit data logging information to the data network hub and the data hub arranged for receiving and storing the data logging information. The system further comprises a cluster front-end for interface to an operator or host system. | 2013-02-14 |
20130037731 | REFRIGERATOR COMPRISING AN ELECTRIC VALVE - A refrigerator includes an electric valve that can be transferred into a closed state in response to a closing signal. In order to increase the tightness of the electric valve, the refrigerator includes a valve driver unit which is designed to subject the electric valve in the closed state to a sequence of closing signals. | 2013-02-14 |
20130037732 | VALVE OPERATED BY ITS OWN MEDIUM - The invention relates to a valve comprising a valve housing having a valve inlet and outlet, a valve seat arranged in the direction or flow of the fluid between the valve inlet and outlet, a closure means which is movably arranged in the valve housing and has a first side and a second side, wherein the closure means closes off the valve seat tightly when the valve is in the closed state, a balancing opening for producing a pressure compensation between the first side and the second side of the closure means, and at least one control actuator, wherein the control actuator closes off the balancing opening of the closure means in a closed position and frees the balancing opening of the closure means in an open position so that the closure means frees the valve seat as a result of a pressure compensation via the balancing opening | 2013-02-14 |
20130037733 | QUICK RELEASE CONNECTOR - A quick release connector has a body, a positioning mount, a sealing valve and an outer sleeve. The body is hollow and has a threaded end, a connecting end, an air inlet chamber, a mounting recess, a threaded segment, a sealing ring and a pressing ring. The positioning mount is detachably connected to the body and has a fixing end, an inserting end, an air outlet chamber, a returning spring, multiple ball holes and multiple balls. The sealing valve is movably mounted between the body and the positioning mount, selectively abuts the sealing ring of the body and has a closed end, an open end and at lease one air inlet. The outer sleeve is slidably mounted between the body and the positioning mount and has a mounting end, a pushing end, an internal surface, a spring recess, a holding recess and a pressing spring. | 2013-02-14 |
20130037734 | VALVE DEVICE WITH GAP SEAL INJECTION-MOULDED ONTO VALVE, METHOD AND SEMI-FINISHED PRODUCT FOR THE PRODUCTION THEREOF - A method of producing by moulding a valve device, the valve device comprising a housing, which surrounds a flow duct portion, and additionally comprising a valve accommodated on the housing and movable relative thereto such that, by relative adjustment of the valve relative to the housing, the effective flow area of the flow duct portion is modifiable, wherein the housing and the valve already accommodated thereon are formed shapingly in a moulding tool in a common moulding step from a flowable moulding compound, with one-piece formation of a moulding material membrane, together with the valve and the housing, the moulding material membrane being provided between an outer valve portion, and a housing portion surrounding the valve portion, in a shut-off position of the valve relative to the housing, in which shut-off position the flow area of the flow duct portion is as a rule minimal. | 2013-02-14 |
20130037735 | Overmolding Ball Valve - An overmolding ball valve contains a body including a hole and a control lever; a first housing covered on the body and including two first orifices, a second orifice to correspond to the control lever, the body being received in the first housing, the control lever extending out of the second orifice so that the body is capable of rotating in the first housing; a second housing to cover the body and the first housing being injection molded and including a chamber, two channels disposed on the chamber to correspond to the two ends of the hole individually, and a seat secured on another end of the chamber to correspond to the control lever, the body and the first housing being fixed in a mold to injection mold the second housing, the body and first housing are located at the chamber, and the control level extending out of the seat. | 2013-02-14 |
20130037736 | SHUTTLE VALVE - A shuttle valve | 2013-02-14 |
20130037737 | DISC ASSEMBLY FOR A VALVE AND METHOD OF MAKING THE SAME - A shutoff valve, e.g., an engine shutoff valve, is provided which includes a valve body having a fluid, e.g., air, passage and a disc assembly. The disc assembly is pivotable within the fluid passage from an open position to provide for free flow of fluid through the passage, to a closed position to provide a substantially closed off the fluid passage. The disc assembly includes a front disc, a rear disc, and a seal, e.g., a spring energized PTFE seal, disposed between the front disc and the rear disc. The front disc is permanently secured, e.g., welded, soldered or brazed, to the rear disc such that the seal is captured between the front disc and the rear disc. | 2013-02-14 |
20130037738 | BALL VALVE - A ball valve which can suppress the increasing of processing labor time and reliably prevent simultaneous rotation of a ball seat and a ball when the ball is rotated by handle manipulation is provided. The valve body | 2013-02-14 |
20130037739 | DRIPFREE GASOLINE NOZZLE - A device for reducing drips from a nozzle comprising a valve body comprising a frusto-conical outer surface, a first aperture that receives the stem of a movable valve closure mechanism, and one or more additional apertures that allow fluids to flow through the valve body when the valve is opened. In an exemplary embodiment of the invention, the spring biased movable valve closure mechanism comprises a stem extending in the direction of the longitudinal axis of the valve body, a frusto-conical valve head that maintains a fluid barrier seal with the outer surface, and a spring that biases the valve closure mechanism in the direction of the longitudinal axis of the valve body. | 2013-02-14 |
20130037740 | NANOHETEROSTRUCTURE AND METHOD FOR PRODUCING THE SAME - A nanoheterostructure includes a first inorganic component and a second inorganic component one of which is a matrix, and the other of which is three-dimensionally and periodically arranged in the matrix, and has a three-dimensional periodic structure whose average value of one unit length of a repeated structure is 1 nm to 100 nm. | 2013-02-14 |
20130037741 | HEAT TRANSFER MEDIUM BASED ON SULPHUR AND USE OF THE HEAT TRANSFER MEDIUM - The invention relates to a heat transfer medium including a mixture containing elemental sulphur and at least one additive and a use of the heat transfer medium. A heat transfer medium including a mixture containing elemental sulphur and at least one additive is indicated. The heat transfer medium is characterized in that the additive includes at least one halogenated hydrocarbon. The halogenated hydrocarbon is, in particular, a chlorinated and/or brominated paraffin. The heat transfer medium is used for reversible energy storage. The heat transfer medium is preferably used for operating a solar thermal power station for converting solar energy into electric energy. Sunlight is converted into heat energy of the heat transfer medium. | 2013-02-14 |
20130037742 | CATHODE ACTIVE MATERIAL FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY MANUFACTURING METHOD THEREOF, AND NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY - A non-aqueous electrolyte secondary battery is provided that has both good safety and durability characteristics while at the same time has high charge/discharge capacity. The cathode active material for a non-aqueous electrolyte secondary battery of the present invention is a lithium nickel composite oxide to which at least two or more kinds of metal elements including aluminum are added, and comprises secondary particles that are composed of fine secondary particles having an average particle size of 2 μm to 4 μm, and rough secondary particles having an average particle size of 6 μm to 15 μm, with an overall average particle size of 5 μm to 15 μm; where the aluminum content of fine secondary particles (metal mole ratio; SA) is greater than the aluminum content of rough secondary particles (metal mole ratio: LA), and preferably the aluminum concentration ratio (SA/LA) is within the range 1.2 to 2.6. | 2013-02-14 |
20130037743 | NUCLEATING AGENT COMPOSITION FOR ENHANCING RIGIDITY AND TOUGHNESS OF POLYPROPYLENE - A nucleating agent composition for increasing rigidity and toughness of polypropylene is provided. The nucleating agent composition comprises a carboxylate nucleating agent and a phosphate nucleating agent. The carboxylate nucleating agent is selected from the group consisting of sodium benzoate and hydroxyl aluminum para-tertiary butyl benzoate, and the phosphate nucleating agent is selected from any one of sodium 2,2′-methylene-di(4,6-di-t-butyl phenyl) phosphate and aluminum bis[2,2′-methylene-di(4,6-di-t-butylphenyl)] phosphate. The nucleating agent composition according to the present invention not only can significantly improve the bending modulus and thermal deformation temperature of polypropylene, but also can improve the impact strength of polypropylene. | 2013-02-14 |
20130037744 | CARBOXYL-FUNCTIONALIZED SILICON-CONTAINING PRECURSOR COMPOUND OF VARIOUS ORGANIC CARBOXYLIC ACIDS - The invention relates to a composition of a carboxyl-functionalized silicon-containing precursor compound of at least two different organic acids, said composition having two, three, or four carboxyl groups functionalized with various hydrocarbon groups according to formula I and/or II. Said carboxyl groups can be released as carboxylic acids and can be used as silane hydrolysis catalysts and/or silane condensation catalysts. The invention further relates to methods for producing the composition, to the use of the composition for cross-linking polymers, and to a formulation of the composition in the form of a masterbatch. | 2013-02-14 |
20130037745 | LIQUID-CRYSTALLINE MEDIUM - The present invention relates to a liquid-crystalline medium, characterised in that it contains
| 2013-02-14 |
20130037746 | OPTICAL SWITCH ELEMENT COMPRISING A LIQUID-CRYSTALLINE MEDIUM - The present invention relates to an optical switch element, comprising a liquid-crystalline medium for the temperature-dependent regulation of radiant energy flow. The invention furthermore relates to the use of the optical switch element for the regulation of radiant energy flow between interior spaces and the environment and for the regulation of the temperature of interior spaces. The invention furthermore relates to a liquid-crystalline medium, characterised in that it comprises 5-95% of a compound of the formula (I), in particular for use in the optical switch elements according to the invention. | 2013-02-14 |
20130037747 | ALUMINATE FLUORESCENT MATERIALS AND PREPARATION METHODS THEREOF - Aluminate fluorescent materials and preparation methods thereof are provided. The fluorescent materials include a core and a shell coating the core. The core is metal nano particle, the shell is fluorescent powder represented by the following chemical formula: (Ce | 2013-02-14 |
20130037748 | SEMICONDUCTOR DEVICE MEMBER, PRODUCTION METHOD OF SEMICONDUCTOR-DEVICE-MEMBER FORMATION LIQUID AND SEMICONDUCTOR DEVICE MEMBER, AND SEMICONDUCTOR-DEVICE-MEMBER FORMATION LIQUID, PHOSPHOR COMPOSITION, SEMICONDUCTOR LIGHT-EMITTING DEVICE, LIGHTING SYSTEM AND IMAGE DISPLAY SYSTEM USING THE SAME - To provide a semiconductor device member that is superior in heat resistance, light resistance, film-formation capability and adhesion, and is capable of sealing a semiconductor device and holding a phosphor without causing cracks, peelings and colorings even after used for a long period of time, the weight loss at the time of heating, measured by a predetermined weight-loss at-the-time-of-heating measurement method, is 50 weight % or lower and the ratio of peeling, measured by a predetermined adhesion evaluation method, is 30% or lower, in the semiconductor device member. | 2013-02-14 |
20130037749 | Solvent Compositions - Suggested are solvent compositions, comprising (a) Carboxylic acid dialkyl amides (b) Fatty acids or their salts, and (c) Ethylene oxide-propylene oxide copolymers. | 2013-02-14 |
20130037750 | Systems And Methods For Starting Up A Gasifier - Systems and methods for starting a gasifier are provided. In the method, a heated start-up medium can be fed to a gasifier operating at a first temperature. Heat can be transferred from the heated start-up medium to the gasifier to increase the temperature of the gasifier from the first temperature to an intermediate temperature sufficient to auto-ignite a start-up fuel. A start-up fuel and an oxidant can be fed to the gasifier after the temperature within the gasifier is increased to the intermediate temperature. At least a portion of the start-up fuel can be combusted within the gasifier to produce a combustion gas. Heat can be transferred from the combustion gas to the gasifier to increase the temperature of the gasifier to an operating temperature, wherein the operating temperature is sufficient to gasify at least a portion of a hydrocarbon feedstock. | 2013-02-14 |
20130037751 | MIXING DEVICE FOR A FUEL REFORMER, FUEL REFORMER AND METHOD FOR CONVERTING HYDROCARBON FUELS INTO HYDROGEN RICH GAS - A mixing device for a fuel reformer for mixing at least two fluids is provided. The mixing device includes at least a first plurality of holes which is arranged along a first row, and a second plurality of holes which is arranged along a second row. The mixing device can be used in a fuel reformer for converting hydrocarbon fuel into hydrogen rich gas by auto-thermal reaction process having a, preferably cylindrically shaped and double walled, housing with two side walls forming a reaction chamber of the fuel reformer, wherein hydrocarbon fuel and an oxidizing agent are mixed by the mixing device. | 2013-02-14 |
20130037752 | ELECTROLUMINESCENT MATERIALS COMPRISING FLUORENE DERIVATIVES - OLED compounds of the general structure: B—S-A-S—B in which rod-like nuclei A includes a condensed aromatic ring structure in turn having fluorene ring structures condensed with at least one additional fluorene ring structures wherein the fluorene ring systems provided by the condensed aromatic structure are substituted at the 9-position, and in which the 9-positions of the fluorenes are not susceptible to oxidation. | 2013-02-14 |
20130037753 | ORGANIC ELECTRONIC MATERIAL, POLYMERIZATION INITIATOR AND THERMAL POLYMERIZATION INITIATOR, INK COMPOSITION, ORGANIC THIN FILM AND PRODUCTION METHOD FOR SAME, ORGANIC ELECTRONIC ELEMENT, ORGANIC ELECTROLUMINESCENT ELEMENT, LIGHTING DEVICE, DISPLAY ELEMENT, AND DISPLAY DEVICE - Disclosed is an organic electronic material comprising charge transporting compounds and ionic compounds having electron-accepting properties and high solubility in a solvent. The organic electronic material is characterized by comprising charge transporting compounds and ionic compounds, and in that at least one of the ionic compounds is any one kind of compounds represented by general formulas (1b)-(3b). (In the formulas Y | 2013-02-14 |
20130037754 | VDF POLYMER COMPOSITION - The invention pertains to a thermoplastic VDF polymer composition comprising: at least one thermoplastic vinylidene fluoride (VDF) polymer comprising at least 85% by moles of recurring units derived from VDF; and at least one ethylene/chlorotrifluoroethylene (ECTFE) polymer, wherein said ECTFE polymer possesses a melting point of less than 210° C. and it is comprised in an amount of from 0.1 to 20% wt with respect to the total weight of VDF polymer and ECTFE polymer. The invention also pertains to a process for making the VDF polymer and to the uses thereof for manufacturing films, in particular transparent films. | 2013-02-14 |
20130037755 | Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies - Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows that couple microwave energy to deposition species. The apparatus includes a microwave applicator with one or more conduits that carry deposition species. The applicator transfers microwave energy to the deposition species to energize them to a reactive state. The conduits physically isolate deposition species that would react or otherwise combine to form a thin film material at the point of microwave power transfer and deliver the microwave-excited species to a deposition chamber. Supplemental material streams may be delivered to the deposition chamber without passing through the microwave applicator and may combine with deposition species exiting the conduits to form a thin film material. Precursors for the microwave-excited deposition species include fluorinated forms of silicon. Precursors for supplemental material streams include hydrogenated forms of silicon. | 2013-02-14 |
20130037756 | ELECTRODES FOR ELECTROCHEMICAL CAPACITOR AND ELECTROCHEMICAL CAPACITOR INCLUDING THE SAME - An electrode for an electrochemical capacitor including a carbon material that is doped and two types of conductive materials with different particle sizes, and an electrochemical capacitor including the same. The doped carbon material is used as the active material and the two types of conductive materials with different particle sizes are added between the active materials with a relatively large particle size, so that the electrode with high density can be prepared by increasing the amount of active material per unit volume, and can be efficiently used in a low resistance and high output electrochemical capacitor by increasing the filling density of the conductive material with excellent conductivity. | 2013-02-14 |
20130037757 | USE OF XANTHAN GUM AS AN ANODE BINDER - Xanthan gum has been found to be a superior binder for binding an electrode, especially an anode, in a lithium-ion or lithium-sulfur battery, being able to accommodate large volume changes and providing stable capacities in batteries tested with different types of anode materials. | 2013-02-14 |
20130037758 | Preparation Method of Transition Metal Oxide and Carbon Nanotube Composite, and Composite Thereof - Provided is a method of preparing a complex of a transition metal oxide and carbon nanotube. The method includes (a) dispersing carbon nanotube powder in a solvent, (b) mixing the dispersion with a transition metal salt, and (c) synthesizing a complex of transition metal oxide and carbon nanotube by applying microwave to the mixed solution. The method may considerably reduce the time required to synthesize the complex. In the complex of transition metal oxide and carbon nanotube prepared by the method, the transition metal oxide may be stacked on the surface of the carbon nanotube in the size of a nanoparticle, and may enhance charge/discharge characteristics when being applied to a lithium secondary battery as an anode material. | 2013-02-14 |
20130037759 | SEMICONDUCTIVE POLYOLEFIN COMPOSITION COMPRISING CONDUCTIVE FILLER - The present invention relates to a semiconductive polyolefin composition comprising graphene nanoplatelets. It also relates to a semiconductive polyolefin composition comprising the combination of graphene nanoplatelets and carbon black. Moreover, the present invention is related to a process for producing the semiconductive polyolefin composition as well to the use of the semiconductive polyolefin composition in a power cable. Further, the invention is also related to an article, preferably a power cable comprising at least one semiconductive layer comprising said polyolefin composition. | 2013-02-14 |
20130037760 | BIPOLAR PLATE FOR REDOX FLOW BATTERY - A bipolar plate for a redox flow battery that uses an electrically conductive composite having excellent mechanical strength, plasticity, and liquid-blocking property, and higher electrical conductivity is provided. The bipolar plate includes an electrically conductive composite prepared by mixing a thermoplastic resin, a carbonaceous material selected from graphite and carbon black, and a carbon nano-tube, in which a carbonaceous material content is 20 to 150 parts by weight and a carbon nano-tube content is 1 to 10 parts by weight relative to 100 parts by weight of the thermoplastic resin. | 2013-02-14 |
20130037761 | THICK FILM PASTE CONTAINING LEAD-TELLURIUM-LITHIUM-TITANIUM-OXIDE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - The present invention is directed to an electroconductive thick film paste composition comprising Ag and a lead-tellurium-lithium-titanium-oxide both dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. | 2013-02-14 |
20130037762 | Preparation of Stable, Bright Luminescent Nanoparticles Having Compositionally Engineered Properties - A method is provided for preparing luminescent semiconductor nanoparticles composed of a first component X, a second component A, and a third component B, wherein X, A, and B are different, by combining B with X and A in an amount such that the molar ratio B:(A+B) is in the range of approximately 0.001 to 0.20 and the molar ratio X:(A+B) is in the range of approximately 0.5:1.0 to 2:1. The characteristics of these nanoparticles can be substantially similar to those of nanoparticles containing only X and B while maintaining many useful properties characteristic of nanoparticles containing only X and A; and can additionally exhibit emergent properties such as a peak emission energy less than that characteristic of a particle composed of XA or XB alone. This method is particularly applicable to the preparation of stable, bright nanoparticles that emit in the red to infrared regions of the electromagnetic spectrum. | 2013-02-14 |
20130037763 | RED LIGHT TRANSMITTING ZIRCONIA SINTERED BODY, METHOD FOR PRODUCING THE SAME, MEMBER COMPRISING THE SINTERED BODY, AND JEWELRY GOODS AND EXTERIOR COMPONENT USING THE MEMBER - An object of the present invention is to provide a colored translucent zirconia sintered body having red color and high translucency. The present invention relates to a zirconia sintered body, characterized by containing 6 to 30 mo % of yttria and 0.1 to 5 mol % of cerium oxide in terms of CeO | 2013-02-14 |
20130037764 | MANIPULATION TOOL FOR BELLOWS - A manipulation tool for a bellows includes a first arm and a first engaging member extending from the first arm. The first engaging member is configured to be removably engaged with an outer axial surface of a first flange portion of the bellows. The manipulation tool for the bellows further includes a second arm movably positioned with respect to the first arm along a longitudinal axis of the bellows, and a second engaging member extending from the second arm. The second engaging member is configured to be removably engaged with an outer axial surface of a second flange portion of the bellows. | 2013-02-14 |
20130037765 | LIFTING DEVICE FOR SCISSOR LIFTS - A lifting device for scissor lifts, in particular for raising motor vehicles, which during the starting phase of the lifting movement requires a reduced force for raising. The lifting device for scissor lifts includes at least two scissor arms which cross one another, a linear actuator for raising a scissor arm, a double lever joint which is pivotably mounted on a scissor arm; wherein the double lever joint couples the lifting movement of the linear actuator to at least one scissor arm. | 2013-02-14 |
20130037766 | HAND-OPERATING VACUUM PULLING DEVICE - A hand-operated vacuum pulling device includes a shank, over which a backward ram is slidable fit. The shank has a front end to which a suction cup is attached and a rear end to which a handgrip defining a cylinder and having a pressure relief seat is attached. The pressure relief seat forms a ram stop at a joint thereof with the shank. The handgrip has a rear end to which a ring-shaped cover assembly is attached. The piston assembly is manually operable to induce a vacuum inside the cylinder. And then, the ring-shaped cover assembly can be manually operated to pull the piston assembly backward for repeated operation of the piston assembly to thereby make a spring contained in the piston assembly stiffer and increase the suction power of the suction cup. The backward ram can be quickly moved backward to impact the ram stop for improving pulling effect. | 2013-02-14 |
20130037767 | HAMMER WITH LEVERAGE NO. II - A hand tool includes an elongated plunger assembly and a locking assembly. The locking assembly has a catch assembly with a release actuator. The release actuator is movable in a direction generally not aligned with the tool head plane of motion. The locking assembly catch member is structured to engage the plunger assembly body and maintain the plunger assembly body in a selected position. When the plunger assembly body is disposed within the tool head and a user desires to extend the plunger assembly, the user actuates the release actuator thereby removing the engagement of the catch member and allowing a socket spring to move the plunger assembly body to the extended position. | 2013-02-14 |
20130037768 | Portable hoist for hand trucks - A portable hoist adapted for attachment to a hand truck nose plate is disclosed. The hoist comprises an adapter that sandwiches the nose plate, and a hole or holes may be fabricated in the nose plate for securing hardware to be installed, such as a bolt, bolts, strap, etc. Receivers on the hoist hold removable, load supportive legs securely in place. Casters may be attached to legs to improve mobility. A jib assembly capable of several height settings remains reasonably level at all times when in use, making it ideal for tight spaces. The pivot point of the arm is at end of the mast opposite the adapter assembly, the other end attaching to the handle of the hand truck and securing with a latch. A winch attached to the arm provides a cable extending to and about a sheave or sheaves, terminating beyond the sheave carried at the free end of the jib boom. A brace on the mast allows the arm latch to secure when the arm is collapsed. The jib assembly folds downward with a brake to hold the boom reasonably parallel to the mast. A cable securing hook is attached to the mast, and with slight tension on the cable, the latch brace and cable hook enable the hoist to be carried about easily, utilizing the boom as a handle. | 2013-02-14 |
20130037769 | STEEL ROPE SAFETY SYSTEM WITH COMPACTED ROPES - A steel rope safety system includes at least one steel rope having at least one strand, and the at least one rope or at least one strand is compacted. Further, a method is provided for making a steel rope safety system comprising the step of providing at least two wires, the step of stranding the wires thereby forming a strand for a rope and the step of compacting the strand. The steel rope safety system includes a guardrail system having vertical poles and horizontal compacted ropes which are held in place by hooks. The steel rope safety system may include non-round shaped, such as trapezoidal shaped compacted wires. There is likewise provided the use of compacted steel ropes as impact reducing material. | 2013-02-14 |
20130037770 | REMOVABLE BARRIER FOR LOCATION ON AN UPPER PORTION OF A WALL - This invention relates to a barrier for fixing to an upper portion of a wall, the barrier comprising fixing means securable to the wall, and a barrier held by the fixing means that locates above the upper portion of the wall, wherein the barrier is removable from the fixing means to allow access to the upper portion of the wall as required. In one aspect, at least a portion of the barrier is moveable relative to a remainder of the barrier and between a first position where it is located above an upper edge of the wall, and a second position where access is then provided to the upper wall edge above which the movable barrier portion was previously positioned. | 2013-02-14 |
20130037771 | Gate Bracket Systems and Methods - A bracket system for forming gate assemblies comprising at least two brace members that are rigidly attached to hinge assemblies. The brace members are adapted to be attached to support members to form two corners of a gate box functioning as the structural portion of the gate assembly. The hinge assemblies are adapted to be rigidly attached to a fence post to allow the gate assembly to pivot relative to the fence post. Gate assemblies of arbitrary height and width can be formed using the bracket system. | 2013-02-14 |
20130037772 | Memory Cells - Some embodiments include memory cells. A memory cell may contain a switching region and an ion source region between a pair of electrodes. The switching region may be configured to reversibly retain a conductive bridge, with the memory cell being in a low resistive state when the conductive bridge is retained within the switching region and being in a high resistive state when the conductive bridge is not within the switching region. The memory cell may contain an ordered framework extending across the switching region to orient the conductive bridge within the switching region, with the framework remaining within the switching region in both the high resistive and low resistive states of the memory cell. | 2013-02-14 |
20130037773 | IONIC DEVICES WITH INTERACTING SPECIES - An ionic device includes a layer ( | 2013-02-14 |
20130037774 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first horizontal molding pattern, a horizontal electrode pattern disposed on the first horizontal molding pattern, and a second horizontal molding pattern disposed on the horizontal electrode pattern. A vertical structure extends through the horizontal patterns. The vertical structure includes a vertical electrode pattern, a data storage pattern interposed between the vertical electrode pattern and the horizontal patterns, a first buffer pattern interposed between the data storage pattern and the first molding pattern, and a second buffer pattern interposed between the data storage pattern and the second molding pattern and spaced apart from the first buffer pattern. | 2013-02-14 |
20130037775 | NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR DEVICE INCORPORATING NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element of the present invention comprises a first electrode ( | 2013-02-14 |
20130037776 | VARIABLE RESISTANCE MEMORY - A variable resistance memory according to an embodiment includes: a first wiring; a second wiring intersecting with the first wiring; a first electrode provided in an intersection region between the first wiring and the second wiring, the first electrode being connected to the first wiring; a second electrode connected to the second wiring, the second electrode facing to the first electrode; a variable resistance layer provided between the first electrode and the second electrode; and one of a first insulating layer and a first semiconductor layer formed at side portions of the second electrode. The one of the first insulating layer and the first semiconductor layer, and the second electrode form voids at the side portions of the second electrode. | 2013-02-14 |
20130037777 | NON-VOLATILE STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME - A variable resistance non-volatile storage device includes: a first line which includes a barrier metal layer and a main layer, and fills an inside of a line trench formed in a first interlayer insulating layer; a first electrode covering a top surface of the first line and comprising a precious metal; memory cell holes formed in a second interlayer insulating layer; a variable resistance layer formed in the memory cell holes and connected to the first electrode; and second lines covering the variable resistance layer and the memory cell holes, wherein in an area near the memory cell holes, the main layer is covered with the barrier metal layer and the first electrode in an arbitrary widthwise cross section of the first line. | 2013-02-14 |
20130037778 | DEVICE INCLUDING QUANTUM DOTS - A method of making a device comprises forming a layer comprising quantum dots over a substrate including a first electrode, fixing the layer comprising quantum dots formed over the substrate, and exposing at least a portion of, and preferably all, exposed surfaces of the fixed layer comprising quantum dots to small molecules. Also disclosed is a method of making a device, the method comprising forming a layer comprising quantum dots over a substrate including a first electrode, exposing the layer comprising quantum dots to small molecules and light flux. A method of making a film including a layer comprising quantum dots, and a method of preparing a device component including a layer comprising quantum dots are also disclosed. Devices, device components, and films are also disclosed. | 2013-02-14 |
20130037779 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME - A nitride semiconductor light-emitting device includes an n-type nitride semiconductor layer, a V pit generation layer, an intermediate layer, a multiple quantum well light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The multiple quantum well light-emitting layer is a layer formed by alternately stacking a barrier layer and a well layer having a bandgap energy smaller than that of the barrier layer. A V pit is partly formed in the multiple quantum well light-emitting layer, and an average position of starting point of the V pit is located in the intermediate layer. | 2013-02-14 |
20130037780 | Apparatus and Associated Methods - An apparatus including a first layer configured to enable a flow of charge carriers from a source electrode to a drain electrode, a second layer configured to control the density of charge carriers in the first layer using an electric field formed between the first and second layers, and a third layer positioned between the first and second layers to shield the first layer from the electric field, wherein the third layer includes a layer of electrically conducting nanoparticles and is configured such that when stress is applied to the third layer, the strength of the electric field experienced by the first layer is varied resulting in a change in the charge carrier density and a corresponding change in the conductance of the first layer. | 2013-02-14 |
20130037781 | FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - A field-effect transistor includes a semiconductor layer containing carbon nanomaterials; a first electrode and a second electrode formed in contact with the semiconductor layer; a third electrode for controlling current flowing between the first electrode and the second electrode; and an insulating layer formed between the semiconductor layer and the third electrode. The insulating layer contains an aromatic polyamide comprising a substituent containing 1 to 20 carbon atoms. | 2013-02-14 |
20130037782 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DIODE INCLUDING THE SAME - A heterocyclic compound represented by Formula 1 below and an organic light-emitting diode (OLED) including the same: | 2013-02-14 |
20130037783 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus is disclosed. In one aspect, the apparatus includes a thin film transistor comprising an active layer, a gate electrode, and source and drain electrodes. The apparatus also includes at least two capacitors each comprising a first electrode having a first region doped with ion impurities and a second region not doped with ion impurities, and formed on the same plane as the active layer. Each capacitor also includes a second electrode formed on the same plane as the gate electrode and disposed corresponding to the second region. The apparatus also includes a pixel electrode formed on the same plane as the gate electrode and connected to one of the source and drain electrodes, a light-emitting layer disposed on the pixel electrode, and an opposite electrode disposed on the light-emitting layer. | 2013-02-14 |
20130037784 | THIADIAZOLE, LIGHT-EMITTING ELEMENT, LIGHT-EMITTING APPARATUS, AUTHENTICATION APPARATUS, AND ELECTRONIC DEVICE - The thiadiazole represented by formula ( | 2013-02-14 |
20130037785 | LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC DEVICE - A light emitting element including an anode, a cathode, a visible light emitting layer which emits visible light and an infrared light emitting layer which emits infrared light installed between the anode and the cathode is provided. Also, it is preferable that the infrared light emitting layer contain a thiadiazole-based compound as a light emitting material. | 2013-02-14 |
20130037786 | NANOCOMPOSITE, PROCESS FOR PREPARING THE SAME, AND SURFACE EMITTING DEVICE - A nanocomposite including: a matrix including a polyimide; and surface-modified inorganic oxide particles disposed in the matrix, wherein a surface of a particle of the surface-modified inorganic oxide particles is modified with an imide functional group. | 2013-02-14 |
20130037787 | ORGANIC LIGHT EMITTING DEVICE - The invention relates to an organic light-emitting device (OLED) comprising at least: a first electrode ( | 2013-02-14 |
20130037788 | NOVEL m-TERPHENYL COMPOUND AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE SAME - An organic light emitting device which includes a m-terphenyl compound having a high T1 energy is provided. In addition, a novel m-terphenyl compound is provided. | 2013-02-14 |
20130037789 | NOVEL NAPHTHOTHIOPHENE COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - The present invention provides a novel naphthothiophene compound having a high lowest excited triplet level (T1). | 2013-02-14 |
20130037790 | NOVEL 10,10-DIALKYLANTHRONE COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A novel stable 10,10-dialkylanthrone compound is provided. | 2013-02-14 |
20130037791 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device that achieves highly efficient emission and low-voltage operation is provided. The organic light-emitting device contains a 9H-xanthen-9-one derivative. | 2013-02-14 |
20130037792 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode (OLED) display is disclosed. In one embodiment, the OLED display includes an organic light emitting element formed over a substrate and an encapsulation portion covering the organic light emitting element. Further, the encapsulation portion may include at least one organic layer and at least one inorganic layer, wherein ends of the inorganic layer and the organic layer directly contact the substrate, and wherein the organic layer is thicker than the inorganic layer. | 2013-02-14 |
20130037793 | AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR FABRICATION METHOD - This disclosure provides systems, methods and apparatus for fabricating thin film transistor devices. In one aspect, a substrate having a source area, a drain area, and a channel area is provided. The substrate also includes an oxide semiconductor layer, a first dielectric layer overlying the channel area of the substrate, and a first metal layer on the dielectric layer. Hydrogen ions are implanted with a plasma-immersion ion implantation process in the oxide semiconductor layer overlying the source area and the drain area of the substrate. The hydrogen ion implantation forms a doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source area and the drain area of the substrate. | 2013-02-14 |
20130037794 | PIXEL ARRAY SUBSTRATE AND DETECTING MODULE - A pixel array substrate including a substrate and a plurality of pixel structures is provided. Each pixel structure includes a patterned metal layer, an insulating layer, a patterned semiconductor layer and a data line layer. The patterned metal layer includes a gate line and a common electrode line. The patterned semiconductor layer includes a channel layer and a photosensitive resistance layer. The channel layer is disposed above and overlaps a part of the gate line. The data line layer includes a patterned first data line, a second data line and a third data line. The first and the second data lines are coupled to the channel layer and combine with the channel layer and the gate line to compose an active component. The second and the third data lines are coupled to the photosensitive resistance layer and combine with the photosensitive resistance layer to compose a light detecting component. | 2013-02-14 |
20130037795 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An element using a semiconductor layer is formed between wiring layers and, at the same time, a gate electrode is formed using a conductive material other than a material for wirings. A first wiring is embedded in a surface of a first wiring layer. A gate electrode is formed over the first wiring. The gate electrode is coupled to the first wiring. The gate electrode is formed by a process different from a process for the first wiring. Therefore, the gate electrode can be formed using a material other than a material for the first wiring. Further, a gate insulating film and a semiconductor layer are formed over the gate electrode. | 2013-02-14 |
20130037796 | Light-Emitting Device and Method for Manufacturing the Same - A light-emitting device includes a first cladding layer, a light-emitting layer, a second cladding layer, an epitaxial structure including an indium-containing oxide, and an electrode unit for supplying external electricity, The electrode unit includes a first electrode disposed to be electrically connected to the first cladding layer, and a second electrode disposed above the epitaxial structure to be electrically connected to the second cladding layer through the epitaxial structure such that the external electricity is permitted to be transmitted to the light-emitting layer through the first and second electrodes. A method for manufacturing the light-emitting device is also disclosed. | 2013-02-14 |
20130037797 | THIN FILM DEVICE - There is such an issue with a TFT using an oxide semiconductor film that oxygen deficit is generated in a surface region of the oxide semiconductor film after performing plasma etching of a source-drain electrode, and the off-current becomes increased. Disclosed is the TFT which includes: a gate electrode on an insulating substrate as a substrate; a gate insulating film on the gate electrode; an oxide semiconductor film on the gate insulating film; and a source/drain electrode on the oxide semiconductor film. It is the characteristic of the TFT that a surface layer containing at least either fluorine or chlorine exists in a part of the oxide semiconductor film where the source/drain electrode is not superimposed. | 2013-02-14 |
20130037798 | Metal-Oxide Based Thin-Film Transistors with Fluorinated Active Layer - A thin-film transistor with a fluorinated channel and fluorinated source and drain regions and methods of fabrication are provided. The thin-film transistor includes: a substrate; a semiconductor active layer of fluorine-doped metal-oxide formed on the substrate; fluorine-doped source and drain regions disposed adjacent to the semiconductor active layer; a gate electrode disposed over the semiconductor active layer, configured to induce a continuous conduction channel between the source and drain regions; and a gate dielectric material separating the gate electrode and the channel. | 2013-02-14 |
20130037799 | DISPLAY DEVICE INCLUDING TRANSISTOR AND MANUFACTURING METHOD THEREOF - An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced. | 2013-02-14 |
20130037800 | SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING THE SAME, ACTIVE MATRIX SUBSTRATE, AND DISPLAY DEVICE - A semiconductor device includes an oxide semiconductor film in which a channel portion is formed and a gate portion arranged to be opposed to the channel portion. A drain portion in which the oxide semiconductor film has been subjected to resistance reduction process and an intermediate area which is provided between the drain portion and the channel portion and has not been subjected to resistance reduction process are formed in the oxide semiconductor film, and the semiconductor device includes a conductive film to block resistance reduction process to the intermediate area at least at a part. | 2013-02-14 |
20130037801 | LIGHT EMITTING DIODE CHIP - A light emitting diode (LED) chip including: a substrate; and a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, sequentially deposited on the substrate, in which when a length of the substrate is L and a width of the substrate is W, L/W>10. | 2013-02-14 |
20130037802 | SEMICONDUCTOR DIE ASSEMBLIES, SEMICONDUCTOR DEVICES INCLUDING SAME, AND METHODS OF FABRICATION - Methods of fabricating multi-die assemblies including a base semiconductor die bearing a peripherally encapsulated stack of semiconductor dice of lesser lateral dimensions, the dice vertically connected by conductive elements between the dice, resulting assemblies, and semiconductor devices comprising such assemblies. | 2013-02-14 |
20130037803 | MONITORING PAD AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A method of manufacturing a semiconductor device and a semiconductor device package are disclosed. A method of manufacturing a semiconductor device comprises the steps of testing the semiconductor device using at least a first monitoring pad connected to an internal circuit of the semiconductor device via at least a first fuse circuit; after testing the semiconductor device, electrically disconnecting the first monitoring pad from the internal circuit by opening the first fuse circuit; and after testing of the semiconductor device, electrically connecting at least a first auxiliary pad to the first monitoring pad with at least a first connecting terminal, wherein the first auxiliary pad is connected, through at least a first conductive line, to at least a first power pad of the semiconductor device. | 2013-02-14 |
20130037804 | DISPLAY DEVICE - A display device includes: a base film including plastic; an active layer on the base film, the active layer including a polysilicon layer formed by crystallizing an amorphous silicon layer using a laser; a barrier layer between the active layer and the base film; and a laser absorption layer between the barrier layer and the active layer. | 2013-02-14 |
20130037805 | VERTICAL SEMICONDUCTOR DEVICE - A technology for a vertical semiconductor device having a RESURF structure, which is capable of preventing the drop of the withstand voltage when the adhesion of external electric charges occurs is provided. The vertical semiconductor device disclosed in the present specification has a cell region and a non-cell region disposed outside the cell region. This vertical semiconductor device has a diffusion layer disposed in at least part of the non-cell region. When the vertical semiconductor device is viewed in a plane, the diffusion layer has an impurity surface density higher than that satisfying a RESURF condition at an end part close to the cell region, and an impurity surface density lower than that satisfying the RESURF condition at an end part far from the cell region. When the vertical semiconductor device is viewed in a plane, a region in the diffusion layer that has the impurity surface density higher than that satisfying the RESURF condition has a greater mean gradient of the impurity surface density than a region in the diffusion layer that has the impurity surface density lower than that satisfying the RESURF condition. | 2013-02-14 |
20130037806 | THIN-FILM SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A thin-film semiconductor device according to the present disclosure includes: a substrate; a gate electrode formed above the substrate; a gate insulating film formed on the gate electrode; a channel layer that is formed of a polycrystalline semiconductor layer on the gate insulating film; an amorphous semiconductor layer formed on the channel layer and having a projecting shape in a surface; and a source electrode and a drain electrode that are formed above the amorphous semiconductor layer, and a first portion included in the amorphous semiconductor layer and located closer to the channel layer has a resistivity lower than a resistivity of a second portion included in the amorphous semiconductor layer and located closer to the source and drain electrodes. | 2013-02-14 |
20130037807 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device ( | 2013-02-14 |
20130037808 | THIN-FILM TRANSISTOR DEVICE AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR DEVICE - A thin-film transistor device which is a bottom-gate thin-film transistor device, includes: a gate electrode formed above a substrate; a gate insulating film formed above the gate electrode; a crystalline silicon thin film formed above the gate insulating film and having a channel region; an amorphous silicon thin film formed above the crystalline silicon thin film including the channel region; and a source electrode and a drain electrode formed above the amorphous silicon thin film, in which an optical bandgap of the amorphous silicon thin film and an off-state current of the thin-film transistor device have a positive correlation. | 2013-02-14 |
20130037809 | ORGANIC THIN-FILM TRANSISTOR - An organic thin film transistor including at least a gate electrode, a source electrode, a drain electrode, an insulator layer and an organic semiconductor layer, at least one of the source electrode and the drain electrode including a conductive polyaniline composition containing (a) a substituted or unsubstituted polyaniline composite which is protonated by an organic protonic acid or its salts represented by M(XCR | 2013-02-14 |
20130037810 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FABRICATING THE SAME - The present invention relates to a thin film transistor substrate and method for fabricating the same which can secure an alignment margin and reduce the number of mask steps. A thin transistor substrate according to the present invention includes a gate line and a data line crossing each other to define a pixel, a gate metal pattern under the data line, a thin film transistor having a gate electrode, a source electrode and a drain electrode in the pixel, and a pixel electrode connected to the drain electrode of the thin film transistor by a connection electrode, wherein the data line has a plurality of first slits to disconnect the gate metal pattern from the gate line. | 2013-02-14 |
20130037811 | TRANSFLECTIVE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An array substrate for a transflective liquid crystal display device includes: a substrate; a gate line and a data line on the substrate, the gate line and the data line crossing each other to define a pixel region including a transmissive area and a reflective area surrounding the transmissive area; a thin film transistor having a gate insulating layer, the thin film transistor electrically connected to the gate line and the data line; a first passivation layer having a drain contact hole exposing a drain electrode of the thin film transistor and a through hole exposing the substrate in the transmissive area; a pixel electrode on the first passivation layer, the pixel electrode contacting the substrate in the transmissive area through the through hole; and a reflective plate on the pixel electrode, the reflective plate being electrically connected to the drain electrode through the drain contact hole and to the pixel electrode. | 2013-02-14 |
20130037812 | THIN-FILM TRANSISTOR ARRAY SUBSTRATE, ORGANIC LIGHT-EMITTING DISPLAY INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SAME - A thin-film transistor array substrate is disclosed. In one embodiment, the transistor includes a capacitor including a lower electrode disposed on the same layer as an active layer and an upper electrode disposed on the same layer as a gate electrode. The transistor may also include a first insulating layer disposed between the active layer and the gate electrode and between the lower and upper electrodes, the first insulating layer not being disposed on a perimeter of the lower electrode. The transistor may further include a second insulating layer between the first insulating layer and the source and drain electrodes, the second insulating layer not being disposed on perimeters of the upper and lower electrodes. | 2013-02-14 |
20130037813 | CRYSTALLIZATION METHOD OF THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD FOR THIN FILM TRANSISTOR ARRAY PANEL - Exemplary embodiments of the invention disclose a method of manufacturing a thin film transistor array panel having reduced overall processing time and providing a uniform crystallization. Exemplary embodiments of the invention also disclose a crystallization method of a thin film transistor, including forming on a substrate a semiconductor layer including a first pixel area, a second pixel area, and a third pixel area. The crystallization method includes crystallizing a portion of the semiconductor layer corresponding to a channel region of a thin film transistor using a micro lens array. | 2013-02-14 |
20130037814 | THIN FILM TRANSISTOR, METHOD FABRICATING THEREOF, LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME - A thin-film transistor array substrate and a fabrication method thereof according to an embodiment of the present invention are disclosed to form an interlayer insulating layer, thereby reducing a failure occurred during the process subsequent to a gate electrode. The thin-film transistor disclosed according to the present invention may include a substrate, a gate electrode formed on the substrate, a planarized insulating layer formed at a lateral surface portion of the gate electrode and at an upper portion of the substrate, a gate insulating layer formed on the planarized insulating layer containing an upper portion of the gate electrode, an active layer formed at an upper portion of the planarized insulating layer located at an upper side of the gate electrode, and a source electrode and a drain electrode formed on the active layer and separated from each other based on a channel region. | 2013-02-14 |
20130037815 | SEMICONDUCTOR DEVICE - A semiconductor device ( | 2013-02-14 |
20130037816 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device ( | 2013-02-14 |
20130037817 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device includes a plurality of sub-pixels each comprising a light-emitting portion, a thin film transistor (TFT), and a capacitor, each of the sub-pixels emitting a different color, wherein the capacitor of at least one of the plurality of sub-pixels extends into at least one adjacent one of the sub-pixels. | 2013-02-14 |
20130037818 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device includes a thin film transistor including an active layer, a gate electrode, source/drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer over the gate electrode; a pixel electrode on the first insulating layer and the second insulating layer and connected to the source or drain electrode; a first wire on the first insulating layer, of the same material as the gate electrode; a second wire on the second insulating layer to at least partially overlap the first wire and including a lower wiring layer of the same material as the pixel electrode and an upper wiring layer on the lower wiring layer, of the same material as the source/drain electrodes; and third insulating layers between the second insulating layer and the pixel electrode and between the second insulating layer and the second wire. | 2013-02-14 |
20130037819 | LIGHT EMITTING DEVICE - Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a silicon substrate; a nitride buffer layer on the silicon substrate; and a gallium nitride epitaxial layer on the nitride buffer layer, wherein the nitride buffer layer includes a first nitride buffer layer having a first aluminum nitride layer on the silicon substrate and a first gallium nitride layer on the first aluminum nitride layer. | 2013-02-14 |
20130037820 | NITROGEN COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF - A nitrogen compound semiconductor light emitting element having an n-type layer, an active layer comprising AlGaInN and a p-type layer, emitting ultraviolet radiation with an emission peak wavelength of at most 400 nm and having a high emission intensity as well as a manufacturing method thereof are provided. In the nitrogen compound semiconductor light emitting element of the present invention having an n-type layer, an active layer and a p-type layer, the active layer consists of a nitrogen compound semiconductor layer with an emission peak wavelength of at most 400 nm comprising AlGaN, and the n-type layer has an n-type AlGaN layer comprising AlGaN and a GaN protective layer which does not contain Al and has a thickness of at least 5 nm. The active layer is formed on the protective layer. The manufacturing method comprises processes of growing the n-type AlGaN layer at a high substrate temperature of at least 1000° C.; growing the GaN protective layer of at most 400 nm not containing Al thereon; interrupting the growth process and decreasing the substrate temperature; and forming the active layer on the protective layer at a low substrate temperature of less than 1000° C. | 2013-02-14 |
20130037821 | Semiconductor Device and Manufacturing Method thereof - The present invention provides a semiconductor device, comprising: a substrate; shallow trench isolations embedded into the substrate and forming at least one opening area; a channel region located in the opening area; a gate stack comprising a gate dielectric layer and a gate electrode layer and located above the channel region; source/drain regions located at both sides of the channel region and comprising a stress layer that provides a strain to the channel region; wherein, there is a liner layer between the shallow trench isolation and the stress layer, which serves as the seed layer of the stress layer. A liner layer that is of the same or similar material as the stress layer in the source/drain region is inserted between the STI and the stress layer of the source/drain region as a seed layer or nucleation layer for the epitaxial growth, thereby eliminating the STI edge effect during the source/drain strain engineering, i.e. eliminating the gap between the STI and the stress layer of the source/drain region, as a result, the reduction of the channel stress produced by the source/drain strain is prevented, the carrier mobility of the MOS device is increased and the driving capability of the device is enhanced. | 2013-02-14 |
20130037822 | Semiconductor Device and Manufacturing Method Thereof - A semiconductor device and its manufacturing method are provided. The semiconductor device comprises: a semiconductor substrate of a first semiconductor material, a gate structure on the semiconductor substrate, a crystal lattice dislocation line in a channel under the gate structure for generating channel stress, wherein the crystal lattice dislocation line being at an angle to the channel. | 2013-02-14 |
20130037823 | SEMICONDUCTOR DEVICE - In one embodiment, a semiconductor device includes a semiconductor substrate, a gate electrode provided on the semiconductor substrate via an insulating layer, and a gate insulator provided on a side surface of the gate electrode. The device includes a stacked layer including a lower main terminal layer of a first conductivity type, an intermediate layer, and an upper main terminal layer of a second conductivity type which are successively stacked on the semiconductor substrate, the stacked layer being provided on the side surface of the gate electrode via the gate insulator. The upper or lower main terminal layer is provided on the side surface of the gate electrode via the gate insulator and the semiconductor layer. | 2013-02-14 |