06th week of 2010 patent applcation highlights part 13 |
Patent application number | Title | Published |
20100032609 | METHOD OF MAKING DENDRITIC MAGNETIC NANOSTRUCTURES - Magnetic nanostructures comprised of an assembly of magnetic nanorods held together by dipole forces in a dendritic pattern and their method of manufacture. The dendritic magnetic nanostructures are prepared at room temperature by applying a magnetic field to a reverse micelle system wherein at least one salt of a magnetic metal is being precipitated within the core of the reverse micelle. | 2010-02-11 |
20100032610 | COMPOSITIONS COMPRISING 1,2,3,3,3-PENTAFLUOROPROPENE WITH Z- AND E-ISOMER RATIO OPTIMIZED FOR REFRIGERATION PERFORMANCE - Azeotropic or near-azeotropic compositions are disclosed comprising about 0.1 weight percent to about 99.9 weight percent Z-1,2,3,3,3-pentafluoropropene (Z-1225ye) and about 99.9 weight percent to about 0.1 weight percent E-1,2,3,3,3-pentafluoropropene (E-1225ye). | 2010-02-11 |
20100032611 | THERMALLY CONDUCTIVE POLYESTER MOLDING MATERIALS - Thermoplastic molding compositions comprising
| 2010-02-11 |
20100032612 | PROCESS FOR PRODUCTION OF SEALING AGENT - A sealing agent stock solution | 2010-02-11 |
20100032613 | Etchant composition, and methods of patterning conductive layer and manufacturing flat panel display device using the same - An etchant composition, and methods of patterning a conductive layer and manufacturing a flat panel display device using the same are provided. The etchant composition may include phosphoric acid, nitric acid, acetic acid, water and an additive, wherein the additive includes a chlorine-based compound, a nitrate-based compound, and an oxidation regulator. In addition, the flat panel display device may be manufactured by patterning a gate electrode, source/drain electrodes and a pixel electrode using the same etchant composition. The gate electrode, source/drain electrodes and the pixel electrode may be formed of different conductive materials. Accordingly, processes are simplified so that manufacturing costs may be reduced and productivity may be improved. | 2010-02-11 |
20100032614 | METAL-VANADIUM-OXIDE PRODUCT AND PRODUCING PROCESS - A method for making a metal-vanadium oxide product includes selecting a metal, the group Au, Ag, Cu and Pt, providing nanotubular vanadium oxide composed of vanadium oxide layers separated by templating molecules, and producing a product by ionic change of the nanotubular vanadium oxide with a solution of the salt of the metal. The salt is selected from the group AuCl | 2010-02-11 |
20100032615 | METAL NANOPARTICLE DISPERSION - Provided is a metal nanoparticle dispersion capable of suppressing spreadability at a room temperature and drying phenomenon at heating temperature. The metal nanoparticle dispersion includes metal particles; and an organic solvent having a viscosity of 10 mPa·s or more at a room temperature and a flash point of 100° C. or above. | 2010-02-11 |
20100032616 | MIXED MATERIAL WITH HIGH EXPANSION RATE FOR PRODUCING POROUS METALLIC SINTERED BODY - A mixed material having a high expansion rate for producing a porous metallic sintered body including: a conventional mixed material for producing a porous metallic sintered body which is formed of a mixture including a composition of 0.05 to 10% by mass of a non-water-soluble hydrocarbon-based organic solvent having 5 to 8 carbon atoms, 0.5 to 20% by mass of a water-soluble resin binder, and 5 to 80% by mass of a metal powder having an average particle size within a range of 0.5 to 500 μm, and water as the balance; and a gas, wherein the mixed material contains the gas so that the proportion of the gas is within a range of 2 to 50% by volume while the remainder is the conventional mixed material for producing a porous metallic sintered body. | 2010-02-11 |
20100032617 | Process for manufacturing epichlorohydrin - Process for manufacturing epichlorohydrin comprising the following steps:
| 2010-02-11 |
20100032618 | METHOD FOR SEPARATING AND REMOVING FOREIGN MATTERS FROM POLYESTER FIBER WASTE - The purpose of the present invention is to provide a method for collecting effective components from polyester fiber waste containing polyalkylene telephthalate as the main component, more specifically to provide a method for separating and removing foreign matters (mainly cotton) contained in polyester fiber waste. The purpose of the invention can be achieved by a method for separating and removing foreign matters from polyester waste, which includes throwing polyester fiber waste that contains polyalkylene telephthalate as the main component and foreign matters other than the polyalkylene telephthalate into a depolymerization reaction tank, subjecting a part or all of the polyester fiber to a depolymerization reaction with alkylene glycol to give a depolymerization reaction liquid, and then continuously or intermittently feeding the liquid to a foreign matter-separating and removing apparatus having specified characteristics. | 2010-02-11 |
20100032619 | Method for producing a particle-containing functional layer and functional element comprising such a layer - In a method for producing a particle ( | 2010-02-11 |
20100032620 | POLYMERIZABLE OPTICAL ACTIVE COMPOUND AND POLYMERIZABLE COMPOSITION CONTAINING THE SAME - A polymerizable optically active compound of formula (1) has high helical twisting power. When added to a liquid crystal (LC) composition it achieves required helical pitch without largely impairing the physical and optical properties of the LC composition. The compound is suited to be compounded with a LC material, particularly a cholesteric LC material for making an optically anisotropic element excellent in heat resistance, solvent resistance, transparency, optical characteristics, and LC alignment fixing ability. The compound is also useful to form a LC alignment layer, a LC alignment controlling agent, a coating material, a protective film, etc. | 2010-02-11 |
20100032621 | POLYMERIZABLE COMPOUNDS AND POLYMERIZABLE COMPOSITIONS - A polymerizable compound represented by general formula (1) of the invention has good solvent solubility and excellent alignment control properties and optical characteristics. | 2010-02-11 |
20100032622 | Orange-yellow phosphor and warm white LED using the same - A phosphor providing orange-yellow radiation is prepared from a cerium activated rear-earth garnet substrate that contains Li (lithium), Si (silicon), N (nitrogen) and F (fluorine) atoms, obtaining the overall stoichiometric equation of (ΣLn) | 2010-02-11 |
20100032623 | Method for producing a garnet phosphor - A method for producing a garnet phosphor that includes using cryolites as the flux. In particular YAG:Ce is suitable as the garnet. | 2010-02-11 |
20100032624 | INDAZOLE COMPOUND-CONTAINING COMPOSITION AND LIGHT-EMITTING DEVICE USING THE COMPOSITION - Disclosed is a composition containing a compound having an indazole ring structure and a phosphorescent compound. | 2010-02-11 |
20100032625 | ELECTROLUMINESCENT ADHESIVE MASSES - The invention relates to adhesive masses containing at least one electroluminescent additive, single and double-sided adhesive strips which are provided with adhesive masses of said type, and to the use of said adhesive masses for sticking together electronic components. | 2010-02-11 |
20100032626 | BENZIMIDAZOLE COMPOUND-CONTAINING COMPOSITION AND LIGHT-EMITTING DEVICE USING THE COMPOSITION - Disclosed is a composition containing a compound having a benzimidazole ring structure and a phosphorescent compound. | 2010-02-11 |
20100032627 | FORMATION OF BILAYERS OF AMPHIPATHIC MOLECULES - A method of forming bilayers of amphipathic molecules uses droplets of aqueous solution in a hydrophobic medium such as oil. A layer of amphipathic molecules such as a lipid is formed around the surfaces of the droplets. This may be achieved by providing the lipid in the oil and leaving the droplets for a time sufficient to form the layer. The droplets are brought into contact with one another so that a bilayer of the amphipathic molecules is formed as an interface between the contacting droplets. The bilayers may be used for a wide range of studies. The technique has numerous advantages including providing a long lifetime for the bilayers, allowing study of small volumes and allowing the construction of chains and networks of droplets with bilayers in between to study complex systems. | 2010-02-11 |
20100032628 | IRIDIUM-CONTAINING PHOSPHOR AND METHOD FOR PRODUCING THE SAME - An iridium-containing group II-VI compound phosphor capable of efficiently emitting light without any economical problems or problems in energy efficiency or color purity is provided. A method for producing the phosphor is also provided. The phosphor comprises iridium and a group II-VI compound semiconductor, and the iridium is uniformly dispersed in surfaces of phosphor particles and in an inside of the phosphor particles. The method for producing the iridium-containing phosphor comprises firing an inorganic composition containing a group II-VI compound semiconductor and an iridium compound, and an iridium complex salt is used as the iridium compound. | 2010-02-11 |
20100032629 | Adhesive composition containing carbon nanotubes and a copolyamide - The present invention relates to a composition containing: (a) carbon nanotubes and (b) at least one copolyamide capable of being obtained from at least two different starting products chosen from: (i) the lactames, (ii) the aminocarboxylic acids and (iii) equimolar quantities of diamines and dicarboxylic acids. | 2010-02-11 |
20100032630 | RECOVERY OF SILICON FROM KERF SILICON WASTE - A process for the recovery of silicon includes providing silicon-containing solids recovered from a silicon manufacturing process, said recovered silicon-containing solids being substantially free of semiconductor dopants; converting the recovered silicon-containing solids into gaseous silicon forms; subjecting to purification by minimal distillation; collecting the gaseous silicon forms as a condensed liquid of silicon-containing compounds; and utilizing the silicon-containing compounds for silicon deposition. | 2010-02-11 |
20100032631 | Cable-operated device - A cable-operated device may comprise a moving member, a cable, a supporting member, and a coil spring. One end of the cable may be connected to the moving member. The cable may be arranged so as to advance and retreat with respect to the moving member. The moving member may move as the cable is caused to advance and retreat. The supporting member may support the cable along a pathway on which the cable is arranged. One end of the coil spring may be fixed to the moving member, and the other end thereof may be fixed to the supporting member. The cable may be inserted into the inner hole of the coil spring. At least one of the moving member and the supporting member may comprise a guide surface that makes contact with the coil spring from a lateral direction with respect to the coil spring. At least one portion of the guide surface may comprise an alumite film. | 2010-02-11 |
20100032632 | Pulley - Embodiments of the present invention provide pulley apparatuses that can be easily incorporated into block-and-tackle configurations. In some embodiments, a rope can be easily dropped into place and removed, rather than having to be threaded in. For example, the pulley housing can include a rope channeling structure near the end opposite the aperture, and the rope channeling structure can facilitate introducing the rope into engagement with the wheel and/or removing the rope from engagement with the wheel. In some embodiments, the rope channeling structure can prevent the rope from inadvertently becoming removed from the pulley. Some pulley apparatuses can comprise a minimal number of parts, which can significantly simplify the manufacturing process and provide for a more consistent final product. | 2010-02-11 |
20100032633 | FALL RESTRAINT EQUIPMENT COMPONENTS AND METHOD FOR MANUFACTURING THE SAME - A handrail or a swing gate for fall restraint equipment comprising an outer rail constructed from a single, continuous piece of tubular metal, a midrail constructed from a single, continuous piece of tubular metal, and a toeboard constructed from a single, continuous piece of sheet metal, where the outer rail is constructed to receive portions of the midrail and toeboard for an integral construction. | 2010-02-11 |
20100032634 | GUIDE RAIL COVERS - Covers for the guide railings in ballparks, stadiums, arenas and other public gathering places are formed from a durable sheet material having a length approximately the same as that of a section of guide railing and a width somewhat less than twice the height of the railing. The cover is draped over the railing for covering both sides of the railing and for providing substantially increased space in ballparks, stadiums and arenas for the display of decorative, informational and/or advertising materials. | 2010-02-11 |
20100032635 | ARRAY OF LOW RESISTIVE VERTICAL DIODES AND METHOD OF PRODUCTION - An integrated circuit comprising an array of memory cells and a corresponding production method are described. Each memory cell comprises a resistively switching memory element and a vertical selection diode coupled to a selection line in a selection line trench for selecting one cell from the plurality of memory cells. A selection line is coupled to the vertical selection diode at one vertical sidewall of the selection line trench. | 2010-02-11 |
20100032636 | NON-VOLATILE MEMORY CELL WITH ENHANCED FILAMENT FORMATION CHARACTERISTICS - Method and apparatus for constructing a non-volatile memory cell, such as a modified RRAM cell. In some embodiments, a memory cell comprises a resistive storage layer disposed between a first electrode layer and a second electrode layer. Further in some embodiments, the storage layer has a localized region of decreased thickness to facilitate formation of a conductive filament through the storage layer from the first electrode to the second electrode. | 2010-02-11 |
20100032637 | NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a nonvolatile memory device including a phase-change memory configured with cross-point memory cells in which memory elements formed of a phase-change material and selection elements formed with a diode are combined. A memory cell is configured with a memory element formed of a phase-change material and a selection element formed with a diode having a stacked structure of a first polycrystalline silicon film, a second polycrystalline silicon film, and a third polycrystalline silicon film. The memory cells are arranged at intersection points of a plurality of first metal wirings extending along a first direction with a plurality of third metal wirings extending along a second direction orthogonal to the first direction. An interlayer film is formed between adjacent selection elements and between adjacent memory elements, and voids are formed in the interlayer film provided between the adjacent memory elements. | 2010-02-11 |
20100032638 | MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME - Memory cells, and methods of forming such memory cells, are provided that include a carbon-based reversible resistivity switching material. In particular embodiments, methods in accordance with this invention form a memory cell by forming a carbon-based reversible resistance-switching material above a substrate, forming a carbon nitride layer above the carbon-based reversible resistance-switching material, and forming a barrier material above the carbon nitride layer using an atomic layer deposition process. Other aspects are also provided. | 2010-02-11 |
20100032639 | MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME - Memory cells, and methods of forming such memory cells, are provided that include a steering element coupled to a carbon-based reversible resistivity switching material. In particular embodiments, methods in accordance with this invention form a single layer of a carbon-based reversible resistance switching material above a substrate, wherein the single layer of carbon material has a thickness greater than about three monolayers of the carbon-based reversible resistance switching material, and prior to forming an additional layer above the carbon layer, thermally anneal the carbon layer. Other aspects are also provided. | 2010-02-11 |
20100032640 | MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME - Memory cells, and methods of forming such memory cells, are provided that include a carbon-based reversible resistivity switching material. In particular embodiments, methods in accordance with this invention form a memory cell by forming a layer of carbon material above a substrate, forming a barrier layer above the carbon layer, forming a hardmask layer above the barrier layer, forming a photoresist layer above the hardmask layer, patterning and developing the photoresist layer to form a photoresist region, patterning and etching the hardmask layer to form a hardmask region, and using an ashing process to remove the photoresist region while the barrier layer remains above the carbon layer. Other aspects are also provided. | 2010-02-11 |
20100032641 | NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS AND MANUFACTURING METHOD THEREOF - A nonvolatile semiconductor memory apparatus ( | 2010-02-11 |
20100032642 | Method of Manufacturing a Resistivity Changing Memory Cell, Resistivity Changing Memory Cell, Integrated Circuit, and Memory Module - According to an embodiment, a method of manufacturing an integrated circuit including a plurality of resistivity changing memory cells is provided. The method includes: forming a stack of layers including a resistivity changing layer, a first conductive layer, a second conductive layer, and a patterned masking layer which are stacked above each other in this order; patterning the second conductive layer using the masking layer as a patterning mask; patterning the first conductive layer using the second conductive layer as a patterning mask; and patterning the resistivity changing layer using the first conductive layer as a patterning mask. | 2010-02-11 |
20100032643 | MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME - Memory cells, and methods of forming such memory cells, are provided that include a carbon-based reversible resistivity switching material. In particular embodiments, methods in accordance with this invention form a memory cell by (a) depositing a layer of the carbon material above a substrate; (b) doping the deposited carbon layer with a dopant; (c) depositing a layer of the carbon material over the doped carbon layer; and (d) iteratively repeating steps (b) and (c) to form a stack of doped carbon layers having a desired thickness. Other aspects are also provided. | 2010-02-11 |
20100032644 | Nitride Semiconductor Light-Emitting Device and Nitride Semiconductor Light-Emitting Device Fabrication Method - An active layer ( | 2010-02-11 |
20100032645 | AC-DRIVEN LIGHT EMITTING DEVICE HAVING SINGLE ACTIVE LAYER STRUCTURE AND MANUFACTURING METHOD THEREOF - The present invention relates to an AC voltage-driven light emitting device having a single active layer of a core-shell structure (p-i-n structure) in which intrinsic semiconductor nanocrystals, exciton combination centers, are uniformly and isotropically distributed around p-type polymer particles, and n-type small molecular particles surround the semiconductor nanocrystals and p-type polymer, and a manufacturing method thereof. An active layer of a core-shell structure using a polymer-semiconductor nano hybrid in the light-emitting device has an inversion symmetry characteristic showing the same current-voltage characteristic during application of a voltage in a forward direction and a reverse direction. Therefore, due to this inversion symmetry characteristic, the light emitting can be driven by even an AC voltage. Also, since the device can be driven by an AC voltage, limitations of an existing DC voltage-driven organic light emitting diode, that is, destruction or a defect of the device by an overcurrent and generation of a dark spot by degradation of local constituent organic materials are solved. | 2010-02-11 |
20100032646 | LIGHT EMITTING DEVICE - A light emitting device includes: a first layer made of a semiconductor of a first conductivity type; a second layer made of a semiconductor of a second conductivity type; an active layer including a multiple quantum well provided between the first layer and the second layer, impurity concentration of the first conductivity type in each barrier layer of the multiple quantum well having a generally flat distribution or increasing toward the second layer, average of the impurity concentration in the barrier layer on the second layer side as viewed from each well layer of the multiple quantum well being equal to or greater than average of the impurity concentration in the barrier layer on the first layer side, and average of the impurity concentration in the barrier layer nearest to the second layer being higher than average of the impurity concentration in the barrier layer nearest to the first layer. | 2010-02-11 |
20100032647 | UTLRAVIOLET LIGHT EMITTING DEVICES AND METHODS OF FABRICATION - An ultraviolet light emitting semiconductor chip, its use in a LED, and methods of its fabrication are disclosed. The semiconductor chip can include a buffer layer of Al | 2010-02-11 |
20100032648 | LIGHT-EMITTING DEVICE - A light-emitting device with a tunneling structure and a current spreading layer is disclosed. It includes an electrically conductive permanent substrate, an adhesive layer, an epitaxial structure, a tunneling structure and a current spreading layer. The adhesive layer is on the electrically conductive permanent substrate. The epitaxial structure on the adhesive layer at least comprises an upper cladding layer, an active layer, and a lower cladding layer. The tunneling structure on the epitaxial structure comprises a first conductivity type semiconductor layer with a first doping concentration and a second conductivity type semiconductor layer with a second doping concentration. The current spreading layer is on the tunneling structure. | 2010-02-11 |
20100032649 | LIGHT EMITTING DEVICE AND REDUCED POLARIZATION INTERLAYER THEREOF - A light emitting device (LED), in which a reduced polarization interlayer is formed between an electron blocking layer (EBL) and an active layer of the LED, is disclosed. The reduced polarization interlayer is made of Al | 2010-02-11 |
20100032650 | LIGHT EMITTING DIODE HAVING ALGAN BUFFER LAYER AND METHOD OF FABRICATING THE SAME - The present invention relates to a light emitting diode having an Al | 2010-02-11 |
20100032651 | QUANTUM DOT INFRARED PHOTODETECTOR - A quantum dot infrared photodetector includes a quantum dot structure including intermediate layers, and a quantum dot layer sandwiched between the intermediate layers and including quantum dots whose energy potential is low for carriers, the intermediate layers and the quantum dots being formed of a III-V compound semiconductor with the V element being As, and an AlAs layer being provided on one of the interfaces between the intermediate layers and the quantum dot layer including the quantum dots and covering at least the quantum dots. | 2010-02-11 |
20100032652 | INFRARED PHOTODETECTOR - An infrared photodetector including a layer structure of an intermediate layer, and a quantum dot layer having a narrower band gap than the intermediate layer and including a plurality of quantum dots alternately stacked, and detecting photocurrent generated when infrared radiation is applied to the layer structure to thereby detect the infrared radiation, the infrared photodetector further including a first barrier layer provided on one side of the quantum dot layer and having a larger band gap than the intermediate layer; and a second barrier layer provided on the other side of the quantum dot layer and having a larger band gap than the intermediate layer. | 2010-02-11 |
20100032653 | Carbon Nanotube Electric Field Effect Transistor and Process for Producing the Same - This invention provides a process for producing a carbon nanotube electric field effect transistor that can improve yield in channel preparation. Carbon nanotubes dispersed in a mixed acid composed of sulfuric acid and nitric acid are subjected to radical treatment with aqueous hydrogen peroxide to cut the carbon nanotubes and thus to provide carboxyl-introduced carbon nanotube fragments. The carbon nanotube fragments are attached, through a covalent bond and/or an electrostatic bond, to a site, where a source electrode is to be formed, and a site where a drain electrode is to be formed, in a substrate with a functional group, to be attached to a carboxyl group, introduced thereinto. The carbon nanotube fragments attached to the substrate are attached to carbon nanotubes as channels through n-n interaction to fix the carbon nanotubes as channels to the substrate. | 2010-02-11 |
20100032654 | Semiconductor Device Having Silane Treated Interface - A semiconductor device made on a polymer substrate using graphic arts printing technology uses a printable organic semiconductor. An electrode is situated on the substrate, and a dielectric layer is situated over the electrode. Another electrode(s) is situated on the dielectric layer. The exposed surfaces of the dielectric and the top electrode are treated with a reactive silane to alter the surface of the electrode and the dielectric sufficiently to allow an overlying organic semiconductor layer to have good adhesion to both the electrode and the dielectric. In various embodiments, the electrodes may be printed, and the dielectric layer may also be printed. | 2010-02-11 |
20100032655 | Field-effect transistor - Disclosed is a field-effect transistor characterized by using a compound represented by the formula (1) below as a semiconductor material. | 2010-02-11 |
20100032656 | Phenylcarbazole compounds, organic light emitting device comprising the phenylcarbazole compounds and flat panel display device comprising the organic light emitting device - Provided are a compound represented by Formula 1 or 2 below and an organic light emitting device including an organic layer having the compound: | 2010-02-11 |
20100032657 | ORGANIC TRANSISTOR - An organic transistor having a source electrode, a drain electrode, a gate electrode, and an organic semiconductor layer, wherein the organic semiconductor layer comprises a compound represented by the following general formula [1] or [3]: | 2010-02-11 |
20100032658 | Novel organic electroluminescent compounds and organic electroluminescent device using the same - Provided are novel organic electroluminescent compounds and organic electroluminescent devices comprising the same as electroluminescent material. Specifically, the organic electroluminescent compounds according to the invention are characterized in that they are represented by Chemical Formula (1): | 2010-02-11 |
20100032659 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device | 2010-02-11 |
20100032660 | ORGANIC THIN FILM TRANSISTOR, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE - An organic thin film transistor is disclosed, including a substrate formed of an organic insulating layer, a first layer deposited on the substrate using a plating technique to be used for forming a source electrode and a drain electrode, a second layer of a metal material deposited covering the first layer using a further plating technique to be used for forming the source electrode and the drain electrode with the metal material capable of forming an ohmic contact with an organic semiconductor material lower than the first layer, and an organic semiconductor layer over a region between the source electrode and the drain electrode, which are each formed with the first layer and the second layer. Also disclosed is an electric device provided with the organic thin film transistor. | 2010-02-11 |
20100032661 | ORGANIC FIELD-EFFECT TRANSISTOR - An organic field-effect transistor includes between an organic semiconductor layer ( | 2010-02-11 |
20100032662 | Organic Thin Film Transistors - A method of forming an organic thin film transistor comprising: providing a structure comprising source and drain electrodes with a channel region therebetween, a gate electrode, and a dielectric layer disposed between the source and drain electrodes and the gate electrode; and patterning the dielectric layer using the source and drain electrodes as a mask to form a region of dielectric material in the channel region which is thinner than regions of dielectric material adjacent the channel region. | 2010-02-11 |
20100032663 | METHOD AND APPARATUS FOR SIMULTANEOUS LATERAL AND VERTICAL PATTERNING OF MOLECULAR ORGANIC FILMS - The disclosure relates to a method and apparatus for micro-patterning organic layers of OLEDs. The disclosed methods do not require applying pressure to the film, nor do they require heat treatment, surface treatment or fast release rate of a stamp from the substrate. The disclosed methods are particularly advantageous over the conventional shadow masking techniques for providing large array fabrication with small features. In one embodiment of the disclosure, one or more organic films are selected for the OLED as a function of their individual or combined sublimation temperature. The material is selected in view of the depth and shape of the features that are to be formed in the organic layer. The disclosed embodiments can provide minimum feature size of 13 μm which is suitable for high resolution OLED displays. | 2010-02-11 |
20100032664 | THIN FILM TRANSISTOR SUBSTRATE AND A FABRICATING METHOD THEREOF - An oxide semiconductor thin film transistor substrate includes a gate line and a gate electrode disposed on an insulating substrate, an oxide semiconductor pattern disposed adjacent to the gate electrode, a data line electrically insulated from the gate line, the data line and the gate line defining a display region, a first opening exposing a surface of the data line, a second opening exposing a surface of the oxide semiconductor pattern, and a drain electrode disposed on the first opening and a drain electrode pad, the drain electrode extending from the first opening to the second opening and electrically connecting the drain electrode pad and the oxide semiconductor pattern. | 2010-02-11 |
20100032665 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed. | 2010-02-11 |
20100032666 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device including thin film transistors having high electrical properties and reliability is proposed. Further, a method for manufacturing the semiconductor devices with mass productivity is proposed. The semiconductor device includes a thin film transistor which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, a source electrode layer and a drain electrode layer over the gate insulating layer, a buffer layer over the source electrode layer and the drain electrode layer, and a semiconductor layer over the buffer layer. A part of the semiconductor layer overlapping with the gate electrode layer is over and in contact with the gate insulating layer and is provided between the source electrode layer and the drain electrode layer. The semiconductor layer is an oxide semiconductor layer containing indium, gallium, and zinc. The buffer layer contains a metal oxide having n-type conductivity. The semiconductor layer and the source and drain electrode layers are electrically connected to each other through the buffer layer. | 2010-02-11 |
20100032667 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - One of the objects of the present invention is to provide a thin film transistor using an oxide semiconductor film containing indium (In), gallium (Ga), and zinc (Zn), in which the contact resistance between the oxide semiconductor layer and a source and drain electrodes is reduced, and to provide a method for manufacturing the thin film transistor. An ohmic contact is formed by intentionally providing a buffer layer having a higher carrier concentration than the IGZO semiconductor layer between the IGZO semiconductor layer and the source and drain electrode layers. | 2010-02-11 |
20100032668 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. A metal oxide layer having higher carrier concentration than the semiconductor layer is provided intentionally as the buffer layer between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed. | 2010-02-11 |
20100032669 | SEMICONDUCTOR INTEGRATED CIRCUIT CAPABLE OF CONTROLLING TEST MODES WITHOUT STOPPING TEST - A semiconductor integrated circuit capable of controlling test modes without stopping testing of the semiconductor integrated circuit is presented. The semiconductor integrated circuit includes a test mode control unit configured to produce, in response to address decoding signals, a plurality of test mode signals of a first group and a plurality of test mode signals of a second group. The test mode control unit selectively inactivates the test mode signals of the first group by providing a reset signal using the test mode signals of the second group. Therefore, the testing time of the semiconductor integrated circuit can be reduced by inactivating the previous test mode using the reset signal and by executing a new test mode without disconnecting the test mode state. | 2010-02-11 |
20100032670 | ELECTRICAL TEST STRUCTURE TO DETECT STRESS INDUCED DEFECTS USING DIODES - A serpentine double gated diode array for monitoring stress induced defects is disclosed. The diode array is configured with adjacent gate segments and gate loops in close proximity to active areas to maximize a sensitivity to stress induced defects. The diode array is compatible with conventional electrical testing. Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) may be used to isolate individual stress induced defects. Variations in the gate configuration allow estimation of effects of circuit layout on formation of stress induced defects. | 2010-02-11 |
20100032671 | DEGRADATION CORRECTION FOR FINFET CIRCUITS - A pair of split-gate fin field effect transistors (finFETs) in an IC, each containing a signal gate and a control gate, in which an adjustable voltage source, preferably in the form of a digital-to-analog-converter (DAC), is connected to the control gate of one of the finFETs, is disclosed. Threshold measurement circuits on the signal gates enable a threshold adjustment voltage from the adjustable voltage source to reduce the threshold mismatch between the finFETs. Adding a second DAC to the second finFET allows a simpler DAC design. Threshold correction may be performed during the operational life of the IC. Implementations in a differential input stage of an amplifier and in a current mirror circuit are described. | 2010-02-11 |
20100032672 | BONDING PAD, ACTIVE DEVICE ARRAY SUBSTRATE AND LIQUID CRYSTAL DISPLAY PANEL - A bonding pad includes a metal layer, a gate insulting layer, a passivation layer, and a transparent conductive layer. The metal layer has a first metal pattern and a second metal pattern which are separated from each other. The gate insulating layer covers the metal layer, and the passivation layer covers the gate insulating layer. The gate insulating layer and the passivation layer have a first contact opening and a second contact opening respectively exposing a portion of the first metal pattern and a portion of the second metal pattern. The transparent conductive layer covers the passivation layer and fills the first and second contact openings. The transparent conductive layer on the second contact opening serves as a testing-probe contact area. The present invention also provides an active device array substrate having the bonding pad. | 2010-02-11 |
20100032673 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device includes a semiconductor layer which is formed of a poly-Si layer and an a-Si layer and formed above a gate electrode with a gate insulating film interposed therebetween. A source electrode or a drain electrode is formed above the semiconductor layer. An n+Si layer is formed between the source electrode or the drain electrode and the semiconductor layer. Since ends of the source electrode or the drain electrode are formed inside ends of the semiconductor layer, leak current at the ends of the semiconductor layer can be reduced. | 2010-02-11 |
20100032674 | Display Device - An object of the present invention is to provide a display device where small thin film transistors with a lower off current can be formed. The present invention provides a display device where thin film transistors are formed on a substrate, and in the above described thin film transistors, a gate electrode is formed on a semiconductor layer with a gate insulating film in between, the above described thin film transistors are formed of at least a first thin film transistor and a second thin film transistor, and the above described semiconductor layer is divided into individual regions for each film transistor, the above described semiconductor layer is provided with a common region shared either by the drain region of the above described first thin film transistor and the source region of the above described second thin film transistor or by the source region of the above described first thin film transistor and the drain region of the above described second thin film transistor, in the first thin film transistor and the second thin film transistor, the semiconductor layer is provided with LDD regions where the impurity concentration is lower than in the above described drain region and the above described source region, between the channel region and the drain region, as well as between the channel region and the source region, and the above described gate electrode is formed so as to overlap with the above described common region in the above described semiconductor layer and face at least the above described channel region and the above described LDD regions of the above described first thin film transistor and the above described channel region and the above described LDD regions of the above described second thin film transistor. | 2010-02-11 |
20100032675 | Component Comprising a Thin-Film Transistor and CMOS-Transistors and Methods for Production - An electrical component, in the crystalline semiconductor body of which several CMOS transistors in high-voltage or low-voltage technology are formed. The individual CMOS transistors are separated from one another by insulation regions. On one insulation region, a thin-film transistor is formed, having a gate that is realized simultaneously with the gates of the CMOS transistors from the same polysilicon layer. The gate oxide of the thin-film transistor, just like a second polysilicon layer for source drain and body of the thin-film transistor, can be produced together with the structural elements already present in the CMOS process. | 2010-02-11 |
20100032676 | Semiconductor integrated circuit device and a manufacturing method for the same - Provided is a manufacturing method for a power management semiconductor device or an analog semiconductor device both including a CMOS. According to the method, a substance having high thermal conductivity is additionally provided above a semiconductor region constituting a low impurity concentration drain region so as to expand the drain region, which contributes to a promotion of thermal conductivity (or thermal emission) in the drain region during a surge input and leads to suppression of local temperature increase, to thereby prevent thermal destruction. Therefore, it is possible to manufacture a power management semiconductor device or an analog semiconductor device with the extended possibility of transistor design. | 2010-02-11 |
20100032677 | DISPLAY DEVICE - A display device includes gate lines; data lines; charge control lines each including a charge control voltage input pad; first and second thin film transistors (TFTs) each including control and input electrodes connected to the gate and data lines, respectively; a first liquid crystal capacitor connected to an output electrode of the first TFT; a second liquid crystal capacitor connected to an output electrode of the second TFT; a charge control TFT including a control electrode and an input electrode connected to one of the charge control lines and the second pixel electrode, respectively; and a charge-down capacitor connected to an output electrode of the charge control TFT. A duration time of a turn-on voltage pulse applied to the charge control TFT is different from a duration time of a turn-on voltage pulse applied to the first TFT transistor or the second TFT. | 2010-02-11 |
20100032678 | Light emitting display device and method for fabricating the same - A light emitting display device includes a first electrode formed at a light emitting region of a first substrate; a transparent oxide thin film of about 1 Å to about 200 Å in thickness formed on an entire surface of the first electrode at the light emitting region to substantially cover particle on the entire surface of the first electrode; an organic light emitting layer formed on an entire surface of the oxide thin film to emit a light; and a second electrode formed on an entire surface of the first substrate including the organic light emitting layer. | 2010-02-11 |
20100032679 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - A thin film transistor whose threshold voltage can be controlled and which has a favorable switching characteristic is provided. The thin film transistor includes a first gate electrode layer; a semiconductor layer; a first gate insulating layer provided between the first gate electrode layer and the semiconductor layer; source electrode and drain electrode layers which are provided over the semiconductor layer; a conductive layer covered by the first gate insulating layer and the semiconductor layer and provided so as to overlap with part of the first gate electrode layer; a second gate insulating layer provided so as to cover at least a back channel portion of the semiconductor layer; and a second gate electrode layer provided over the second gate insulating layer so as to overlap with the back channel portion of the semiconductor layer. | 2010-02-11 |
20100032680 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - Provided is a display device including: a gate electrode (GT); a semiconductor film (S) which controls a current flowing between a source electrode (ST) and a drain electrode (DT), the semiconductor film including a channel region and two impurity regions formed of regions which sandwich the channel region; two Ohmic contact layers (DS) being interposed between the source electrode and the like and the two impurity regions; and an insulating film laminated on a partial region of the semiconductor film, the partial region being around a position corresponding to a substantial center of the semiconductor film, in which: the semiconductor film is formed of one of microcrystalline-silicon and polycrystalline-silicon; the two impurity regions are formed in regions on which the insulating film is absent; the two Ohmic contact layers cover the two impurity regions therewith; and the source electrode and the like cover the Ohmic contact layers therewith. | 2010-02-11 |
20100032681 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes: a transparent substrate; gate electrodes which are stacked on the transparent substrate; semiconductor films which are stacked above the gate electrodes and constitute thin film transistors together with the gate electrodes; source electrodes and drain electrodes which are formed above the semiconductor films; an insulation film which is stacked between the source electrodes and the semiconductor films and between the drain electrodes and the semiconductor films; and contact holes which are formed in the insulation film so as to connect the source electrodes and the drain electrodes with the semiconductor films. The semiconductor film includes a connection region which is positioned at least below the contact hole and is connected with the source electrode, and a connection region which is positioned at least below the contact hole and is connected with the drain electrode, and impurities are implanted into the connection regions. | 2010-02-11 |
20100032682 | Large area thin freestanding nitride layers and their use as circuit layers - Thin flat crack-free freestanding nitride layers are fabricated by laser patterning of the interface and/or opposing surface of the nitride layer. The nitride layer is substantially flat once removed from the non-native substrate. The thin flat crack free nitride layers are between 3 and 250 microns thick and can have areas greater than 1 cm | 2010-02-11 |
20100032683 | GaN-BASED SEMICONDUCTOR ELEMENT - The GaN-based semiconductor element | 2010-02-11 |
20100032684 | ION IMPLANTATION FOR SUPPRESSION OF DEFECTS IN ANNEALED SiGe LAYERS - A method for fabricating substantially relaxed SiGe alloy layers with a reduced planar defect density is disclosed The method of the present invention includes forming a strained Ge-containing layer on a surface of a Si-containing substrate; implanting ions at or below the Ge-containing layer/Si-containing substrate interface and heating to form a substantially relaxed SiGe alloy layer that has a reduced planar defect density. A substantially relaxed SiGe-on-insulator substrate material having a SiGe layer with a reduced planar defect density as well as heterostructures containing the same are also provided. | 2010-02-11 |
20100032685 | MESA TERMINATION STRUCTURES FOR POWER SEMICONDUCTOR DEVICES AND METHODS OF FORMING POWER SEMICONDUCTOR DEVICES WITH MESA TERMINATION STRUCTURES - An electronic device includes a drift layer having a first conductivity type, a buffer layer having a second conductivity type, opposite the first conductivity type, on the drift layer and forming a P—N junction with the drift layer, and a junction termination extension region having the second conductivity type in the drift layer adjacent the P—N junction. The buffer layer includes a step portion that extends over a buried portion of the junction termination extension. Related methods are also disclosed. | 2010-02-11 |
20100032686 | Bipolar Semiconductor Device, Method for Producing the Same, and Method for Controlling Zener Voltage - Bipolar semiconductor devices have a Zener voltage controlled very precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, a silicon carbide conductive layer of a first conductivity type, a highly doped layer of a second conductivity type and a silicon carbide conductive layer of a second conductivity type which substrate and conductive layers are laminated in the order named. | 2010-02-11 |
20100032687 | ENGINEERED STRUCTURE FOR HIGH BRIGHTNESS SOLID-STATE LIGHT EMITTERS - Electroluminescent (EL) light emitting structures comprises one or more active layers comprising rare earth luminescent centres in a host matrix for emitting light of a particular colour or wavelength and electrodes for application of an electric field and current injection for excitation of light emission. The host matrix is preferably a dielectric containing the rare earth luminescent centres, e.g. rare earth doped silicon dioxide, silicon nitride, silicon oxynitrides, alumina, dielectrics of the general formula Si | 2010-02-11 |
20100032688 | LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A transparent conductive semiconductor substrate | 2010-02-11 |
20100032689 | III-Nitride Compound Semiconductor Light Emitting Device - The present invention discloses a III-nitride compound semiconductor light emitting device having an n-type nitride compound semiconductor layer, an active layer grown on the n-type nitride compound semiconductor layer, for generating light by recombination of electron and hole, and a p-type nitride compound semiconductor layer grown on the active layer. The III-nitride compound semiconductor light emitting device includes a plurality of semiconductor layers including a nitride compound semiconductor layer with a pinhole structure grown on the p-type nitride compound semiconductor layer. | 2010-02-11 |
20100032690 | Light emitting device with an insulating layer - The present invention is related to a light emitting device with an insulating layer, which comprises a transparent substrate, a first light emitting unit, a second light emitting unit, an insulating layer and a conducting layer. The first light emitting unit and the second light emitting unit are set up on the transparent substrate, wherein the second light emitting unit has an appearance of a stair structure. The insulating layer is set between the first and the second light emitting units. The conducting layer is on the insulating layer in order to conduct the first and the second light emitting units. Because of the appearance of the stair structure of the second light emitting unit, improving the cladding efficiency of the insulating layer, further improving the insulating efficiency of the insulating layer and avoiding the insulating layer loosing and the leakage between the first and the second light emitting units. | 2010-02-11 |
20100032691 | LIGHT EMITTING DEVICE, LIGHT EMITTING SYSTEM HAVING THE SAME, AND FABRICATING METHOD OF THE LIGHT EMITTING DEVICE AND THE LIGHT EMITTING SYSTEM - A semiconductor device includes a first light emitting chip, the first light emitting chip having a first semiconductor layer, a second semiconductor layer, and a first active layer disposed therebetween, a second light emitting chip disposed on the first light emitting chip, the second light emitting chip having a third semiconductor layer, a fourth semiconductor layer, and a second active layer disposed therebetween, and a conductive layer disposed between the first semiconductor layer and the fourth semiconductor layer, the first semiconductor layer and the fourth semiconductor layer having different conductivity types. | 2010-02-11 |
20100032692 | LIGHT EMITTING DEVICE FOR AC OPERATION - An AC light emitting device, in which a plurality of light emitting cells formed on a substrate are flip-bonded to a submount to be driven under an AC power source is disclosed. The light emitting device comprises a first serial array of light emitting cells, and a second serial array of light emitting cells, wherein the second serial array is connected in reverse parallel to the first serial array. Meanwhile, bonding patterns are formed on a submount substrate, and the light emitting cells of the first and second serial arrays are flip-bonded to the bonding patterns. Further, node connecting patterns are formed on the submount substrate, and connect the bonding patterns such that nodes corresponding to each other provided in the first and second serial arrays are electrically connected to each other. Accordingly, it is possible to provide an AC light emitting device which can prevent overvoltage from being applied to light emitting cells in the array to which reverse voltage is applied by bonding patterns and node connecting patterns formed on a submount substrate, thereby protecting the light emitting cells. | 2010-02-11 |
20100032693 | LED REFLECTING PLATE AND LED DEVICE - A recess is formed in a land ( | 2010-02-11 |
20100032694 | LIGHT EMITTING DIODE WITH ITO LAYER AND METHOD FOR FABRICATING THE SAME - The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection. | 2010-02-11 |
20100032695 | TUNABLE WHITE LIGHT BASED ON POLARIZATION SENSITIVE LIGHT-EMITTING DIODES - A lighting apparatus for emitting polarized white light, which includes at least a first light source for emitting primary light comprised of one or more first wavelengths and having a first polarization direction; and at least a second light source for emitting secondary light in the first polarization direction, comprised of one or more secondary wavelengths, wherein the first light and the secondary light are combined to produce a polarized white light. The lighting apparatus may further comprise a polarizer for controlling the primary light's intensity, wherein a rotation of the polarizer varies an alignment of its polarization axis with respect to the first polarization direction, which varies transmission of the primary light through the polarizer, which controls a color co-ordinate or hue of the white light. | 2010-02-11 |
20100032696 | Light-Emitting Diode with Textured Substrate - A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions. | 2010-02-11 |
20100032697 | LIGHT-EMITTING MODULE - A light-emitting module ( | 2010-02-11 |
20100032698 | PARTICLE FOR DISPLAY MEDIUM AND INFORMATION DISPLAY PANEL USING SAME - In the particles for display media used for an information display panel, in which at least one group of display media are sealed between two opposed substrates, at least one of two substrates being transparent, and, in which the display media, to which an electrostatic field is applied, are made to move so as to display information such as an image, a material having electric properties of a semiconductor is provided on a surface of the particles. According to the invention, since use is made of the particle whose surface has electric properties of a semiconductor, it is possible to maintain stably a surface charge of the particle for display media. As a result, it is possible to obtain an information display panel having a stable information display state such as an image. | 2010-02-11 |
20100032699 | System for High Efficiency Solid-State Light Emissions and Method of Manufacture - In one embodiment of the invention, a bonding material is used to bond a substitute substrate to the LED, wherein the bonding material does not including gold or tin. The bonding material preferably includes gallium (Ga), such as a combination of Ga and Al or Cu. This bonding material has high thermal conductivity, high strength, high temperature stability and is low cost. In another embodiment of the invention, the substitute substrate is first thinned before it is bonded to the LED structure, so that the substitute substrate is flexible and conforms to the shape of the LED structure. In yet another embodiment of the invention, an apparatus is used for bonding a substitute substrate to a LED which comprises a plurality of semiconductor epitaxial layers, said semiconductor epitaxial layers having been grown on the growth substrate so that said semiconductor epitaxial layers are curved in shape. The apparatus comprises a conduit for evacuating a region near the substitute substrate on a side of the substitute substrate that is opposite to that of said semiconductor epitaxial layers. Gas pressure is applied on the semiconductor epitaxial layers, and the substitute substrate conforms to the shape of said semiconductor epitaxial layers as a result of pressure applied. A bonding material is used for bonding said substitute substrate to the semiconductor epitaxial layers. | 2010-02-11 |
20100032700 | Light-Emitting Diodes on Concave Texture Substrate - A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency. | 2010-02-11 |
20100032701 | Nitride semiconductor light emitting device and method of manufacturing the same - A nitride semiconductor light-emitting device including a reflecting layer made of a dielectric material, a transparent conductive layer, a p-type nitride semiconductor layer, a light emitting layer and an n-type nitride semiconductor layer in this order and a method of manufacturing the same are provided. The transparent conductive layer is preferably made of a conductive metal oxide or an n-type nitride semiconductor, and the reflecting layer made of a dielectric material preferably has a multilayer structure obtained by alternately stacking a layer made of a dielectric material having a high refractive index and a layer made of a dielectric material having a low refractive index. | 2010-02-11 |
20100032702 | Light-Emitting Diode Housing Comprising Fluoropolymer - A light-emitting diode housing comprising fluoropolymer is disclosed. The light-emitting diode housing supports a light-emitting diode chip and reflects at least a portion of the light emitted from the light-emitting diode chip. | 2010-02-11 |
20100032703 | EDGE-EMITTING LED ASSEMBLY - A light-emitting diode (LED) in accordance with the invention includes an edge-emitting LED stack having an external emitting surface from which light is emitted, and a reflective element that is located adjacent to at least one external surface of the LED stack other than the external emitting surface. The reflective element receives light that is generated inside the LED stack and reflects the received light back into the LED stack. At least a portion of the reflected light is then emitted from the external emitting surface. | 2010-02-11 |
20100032704 | LED WITH CURRENT CONFINEMENT STRUCTURE AND SURFACE ROUGHENING - An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure is generally aligned with the contact on the top and primary emission surface of the LED and substantially prevents the emission of light from the area of the active region that is coincident with the area of the confinement structure and the top-surface contact. The LED may include a roughened emitting-side surface to further enhance light extraction. | 2010-02-11 |
20100032705 | LIGHT EMITTING DIODE PACKAGE AND METHOD OF MANUFACTURING THE SAME - Provided is an LED package including a metal substrate that has one or more via holes formed therein; an insulating layer that is formed on a surface of the metal substrate including inner surfaces of the via holes; a plurality of metal patterns that are formed on the insulating layer and are electrically isolated from one another; and an LED chip that is mounted on a metal pattern among the plurality of metal patterns. | 2010-02-11 |
20100032706 | WAFER LEVEL LED PACKAGE STRUCTURE FOR INCREASING CONDUCTIVE AREA AND HEAT-DISSIPATING AREA AND METHOD FOR MAKING THE SAME - A wafer level LED package structure includes a light-emitting unit, a first conductive unit, a second conductive unit and an insulative unit. The light-emitting unit has a light-emitting body, a positive conductive layer and a negative conductive layer formed on the light-emitting body, and a first insulative layer formed between the positive conductive layer and the negative conductive layer. The first conductive unit has a first positive conductive layer formed on the positive conductive layer and a first negative conductive layer formed on the negative conductive layer. The second conductive unit has a second positive conductive layer formed on the first positive conductive layer and a second negative conductive layer formed on the first negative conductive layer. The insulative unit has a second insulative layer formed on the first insulative layer and disposed between the second positive conductive layer and the second negative conductive layer. | 2010-02-11 |
20100032707 | SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME - A semiconductor device includes a semiconductor element, an electrode formed on the semiconductor element, and a protective member covering the semiconductor element. The protective member is formed with a through-hole facing the electrode. In the through-hole, a wiring pattern is formed to be electrically connected to the electrode. | 2010-02-11 |
20100032708 | DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - A plurality of wires and electrodes are formed by forming a first conductive film, selectively forming a resist over the first conductive film, forming a second conductive film over the first conductive film and the resist, removing the second conductive film formed over the resist by removing the resist, forming a third conductive film so as to cover the second conductive film formed over the first conductive film, and selectively etching the first conductive film and the third conductive film. Thus, wires using a low resistance material can be formed in a large-sized panel, and thus, a problem of signal delay can be solved. | 2010-02-11 |