06th week of 2022 patent applcation highlights part 60 |
Patent application number | Title | Published |
20220045217 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device including a substrate, a tunneling insulating film disposed on the substrate, a control gate electrode disposed on the tunneling insulating film, a first floating gate electrode disposed between the control gate electrode and the tunneling insulating film, a second floating gate electrode disposed between the first floating gate electrode and the tunneling insulating film, a first control gate insulating film disposed between the first floating gate electrode and the control gate electrode, a second control gate insulating film disposed between the second floating gate electrode and the first floating gate electrode, and a source electrode and a drain electrode disposed on the substrate to be spaced apart from each other with respect to the control gate electrode, wherein the control gate electrode includes a first metal material, wherein the first floating gate electrode includes a second metal material, wherein the second floating gate electrode includes a third metal material, wherein the first to third metal materials are different from each other, wherein an oxidizing power of the second metal material is smaller than an oxidizing power of the first metal material. | 2022-02-10 |
20220045218 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR - The invention provides a display device and a method of manufacturing a thin film transistor. The method of manufacturing a thin film transistor comprises: (A) providing a substrate; (B) forming a light shielding layer on the substrate, and patterning the light shielding layer to form a patterned light shielding layer; (C) forming a buffer layer on the substrate; (D) forming a semiconductor layer on the substrate, and patterning the semiconductor layer to form a patterned semiconductor layer; (E) forming an insulating layer on the substrate; and (F) forming a conductive layer on the substrate, and patterning the conductive layer to form a patterned conductive layer; wherein the same mask is used for patterning the light shielding layer and the semiconductor layer. Photoelectric effect of the thin film transistor outside the display region can be effectively avoided, while reducing the number of masks in the production process. | 2022-02-10 |
20220045219 | TRANSISTOR HAVING VERTICAL STRUCTURE AND ELECTRIC DEVICE - A transistor having a vertical structure can include a substrate, a first electrode disposed on the substrate, a second electrode disposed on the substrate, an insulation pattern disposed between the first electrode and the second electrode, an active layer connected between the first electrode and the second electrode, a channel area of the active layer disposed along a side surface of the insulation pattern and around an upper edge of the insulation pattern, a gate electrode disposed on the active layer, and a gate insulating film disposed between the gate electrode and the active layer. | 2022-02-10 |
20220045220 | THIN-FILM TRANSISTORS WITH LOW CONTACT RESISTANCE - Techniques are disclosed for forming thin-film transistors (TFTs) with low contact resistance. As disclosed in the present application, the low contact resistance can be achieved by intentionally thinning one or both of the source/drain (S/D) regions of the thin-film layer of the TFT device. As the TFT layer may have an initial thickness in the range of 20-65 nm, the techniques for thinning the S/D regions of the TFT layer described herein may reduce the thickness in one or both of those S/D regions to a resulting thickness of 3-10 nm, for example. Intentionally thinning one or both of the S/D regions of the TFT layer induces more electrostatic charges inside the thinned S/D region, thereby increasing the effective dopant in that S/D region. The increase in effective dopant in the thinned S/D region helps lower the related contact resistance, thereby leading to enhanced overall device performance. | 2022-02-10 |
20220045221 | Diode Including a Plurality of Trenches - A diode is proposed. The diode includes a semiconductor body having a first main surface and a second main surface opposite to the first main surface. The diode further includes an anode region and a cathode region. The anode region is arranged between the first main surface and the cathode region. An anode pad area is electrically connected to the anode region. The diode further includes a plurality of trenches extending into the semiconductor body from the first main surface. A first group of the plurality of trenches includes a first trench electrode. A second group of the plurality of trenches includes a second trench electrode. The first trench electrode is electrically coupled to the anode pad area via an anode wiring line and the second trench electrode. | 2022-02-10 |
20220045222 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURE OF A SEMICONDUCTOR DEVICE - A semiconductor device is provided that includes a first n+ region, a first p+ region within the first n+ region, a second n+ region, a second p+ region, positioned between the first n+ region and the second n+ region. The first n+ region, the second n+ region and the second p+ region are positioned within a p− region. A first space charge region and a second space charge region are formed within the p− region. The first space region is positioned between the first n+ region and the second p+ region, and the second space region is positioned between the second p+ region and the second n+ region. | 2022-02-10 |
20220045223 | Semiconductor Device with Embedded Schottky Diode And Manufacturing Method Thereof - One embodiment provides a semiconductor device. The device comprises a substrate having a first face and a second face, a well region, a source region disposed in the well region, a contact region contacting the well region and the source region, a Schottky region, and a source metal layer. A first part of the source metal layer contacts the Schottky region to form a Schottky diode. The Schottky region is surrounded by the contact region and the well region in a first plane perpendicular to a direction from the first face toward the second face. | 2022-02-10 |
20220045224 | OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING SAME - The invention relates to an optoelectronic component comprising a carrier, an optoelectronic semiconductor chip arranged on the upper side of the carrier, and a frame which is arranged on the upper side of the carrier and which frames the optoelectronic semiconductor chip. An underside of the frame, which faces the upper side of the carrier, has at least one recess. In a spatial area framed by the frame on the upper side of the carrier, there is arranged a potting material which is in contact with the frame and at least partly fills the recess in the frame. | 2022-02-10 |
20220045225 | DOPED PHOTOVOLTAIC SEMICONDUCTOR LAYERS AND METHODS OF MAKING - Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer. | 2022-02-10 |
20220045226 | PHOTOVOLTAIC DEVICE INCLUDING A P-N JUNCTION AND METHOD OF MANUFACTURING - A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer. | 2022-02-10 |
20220045227 | POLYMERIC SOLAR PANEL BACKSHEETS AND METHOD OF MANUFACTURE - An improved backsheet used in the construction of solar panels is disclosed. A method of manufacturing the backsheet and solar panel comprising the backsheet are also disclosed. Additionally, a photovoltaic solar panel module comprising the backsheet is disclosed. The backsheet may comprise a polymeric material that is produced in such a way that multiple functionalities are imparted into the material for outstanding performance and endurance in a solar module. The invention is further directed to a method for producing backsheets comprising such polymeric materials, and a solar cell incorporating such a backsheet. The backsheet may comprise a mono layer or multilayers in various embodiments. The backsheets improve upon the efficiency, strength, weather resistance, cost, and useful life of the solar panels in which the backsheets are incorporated. | 2022-02-10 |
20220045228 | SOLAR CELL - A solar cell that capable of improving light utilization efficiency is disclosed. The solar cell comprises I-VII compound photovoltaic layer, silicon photovoltaic layer, first electrode and second electrode. The I-VII compound photovoltaic layer comprises first and second type I-VII compound layers. The first and second type I-VII compound layer have first and second type impurities, respectively. The second type I-VII compound layer is disposed under the first type I-VII compound layer. The silicon photovoltaic layer comprises first and second type silicon layers. The first and second type silicon layers have first and second type dopants, respectively. The first type and second type silicon layers are disposed under the second type I-VII compound layer and the first type silicon layer, respectively. The first and second electrodes are formed under the second type silicon layer and on a portion of the first type I-VII compound layer, respectively. | 2022-02-10 |
20220045229 | SEMICONDUCTOR PHOTODIODE FUNCTIONING IN A WIDE BAND RANGE AND OBTAINING METHOD THEREOF - A semiconductor photodiode which functions in a wide band range up to medium wave infrared and far wavelengths in addition to visible region and near infrared includes: a light absorber region in micro structure which can provide light absorbance upon being roughened by laser; a first electrical lower contact coated with metal materials such as aluminium (Al), silver (Ag); a silicon which consists of crystalline silicon (c-Si); a second electrical lower contact which is coated with metal materials such as aluminium (Al), silver (Ag); a chalcogen doped hyper-filled silicone region which is obtained as a result of doping by pulse laser to the silicone region implanted by chalcogen elements; and upper electrical contact parts which are coated generally in the thickness range of 10 nm-1000 nm by using two-layered alloys with aluminium (Al)—(Al)-silver (Ag), two-layered alloys with titanium (Ti)-gold (Au), three-layered alloys with Ti-Platinum(Pt)—Au—Ag or three-layered alloys with Ti-lead(Pb)—Ag. | 2022-02-10 |
20220045230 | SHORT WAVELENGTH INFRARED OPTOELECTRONIC DEVICES HAVING GRADED OR STEPPED DILUTE NITRIDE ACTIVE REGIONS - Semiconductor optoelectronic devices having a dilute nitride active region are disclosed. In particular, the semiconductor devices have a dilute nitride active region with at least two bandgaps within a range from 0.7 eV and 1.4 eV. Photodetectors comprising a dilute nitride active region with at least two bandgaps have a reduced dark current when compared to photodetectors comprising a dilute nitride active region with a single bandgap equivalent to the smallest bandgap of the at least two bandgaps. | 2022-02-10 |
20220045231 | LIGHT-EMITTING MODULE AND DISPLAY APPARATUS - The present disclosure provides a light-emitting module and a display apparatus thereof. The light-emitting module includes a circuit substrate which includes a first surface and a second surface opposite to the first surface. The first surface includes a plurality of conductive channels, and the second surface includes a plurality of conductive pads. A plurality of light-emitting groups is arranged in a matrix on the first surface. Each of the light-emitting groups includes a red light-emitting diode chip, a green light-emitting diode chip, and a blue light-emitting diode chip. An electric component is disposed on the first surface and located in the light-emitting groups matrix. A translucent encapsulating component covers the plurality of light-emitting groups and the electric component. Wherein, the light-emitting groups matrix comprises m columns and n rows. | 2022-02-10 |
20220045232 | DIFFUSE DISCHARGE CIRCUIT BREAKER - Devices, methods and techniques are disclosed to interrupt a fault current in a high-voltage direct-current circuit. In one example aspect, a device includes a mechanical switch including a pair of contacts configured to be positioned apart upon activation of the circuit breaker, and a photoconductive component connected in parallel with the mechanical switch. The photoconductive component is configured to establish a current upon activation of the circuit breaker. The photoconductive component comprises a crystalline material positioned to receive a pulsed light signal from a laser light source, and a pair of electrodes coupled to the crystalline material and configured to allow an electric field to be established across the crystalline material to generate the current. | 2022-02-10 |
20220045233 | APPARATUS FOR TREATING SUBSTRATE - Disclosed is a substrate treating apparatus. The apparatus includes a liquid supply unit for supplying light-emission sources and/or a treating liquid onto the substrate, and a voltage application unit for applying a voltage to the substrate on which the light-emission sources have been supplied. | 2022-02-10 |
20220045234 | ENHANCED MICROLEDS FOR INTER-CHIP COMMUNICATIONS - An LED may be optimized for high speed operation for optical communication systems in a variety of ways. The LED, which may be a microLED, may include dopants and dopant levels allowing for increased speed of operation, the LED may include interlayers, and the LED may include other features. | 2022-02-10 |
20220045235 | METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE INCLUDING PHOSPHOR PIECES - A method of manufacturing a light-emitting device | 2022-02-10 |
20220045236 | MICRO LED LASER RELEASE FROM SILICON WAFER - Methods and systems for improving the yield of laser ablation of semiconductor devices, such as micro-LEDs, in a direct transfer method are described. In the disclosed embodiments, an ablation layer is used to mask a nucleation layer on a donor substrate, with an aperture provided to allow epitaxial growth of a semiconductor structure. The aperture size is selected as the minimum necessary to ensure proper epitaxial growth. Layers disposed above the ablation layer may have larger apertures to that a portion of the semiconductor structure stem overlies the ablation layer, allowing a greater force generated during the ablation process to be directed against the semiconductor structure, improving the likelihood of separation of the structure from the donor substrate. Other embodiments are described. | 2022-02-10 |
20220045237 | MAGNETIC LIGHT-EMITTING STRUCTURE AND FABRICATION METHOD FOR MANUFACTURING A MAGNETIC LIGHT-EMITTING ELEMENT - A magnetic light-emitting structure and fabrication method for manufacturing a magnetic light-emitting element are provided. The fabrication method comprises providing a magnetic metal composite substrate, wherein a second metal layer is respectively disposed on an upper and lower surface of a first metal layer; forming a connecting metal layer, an epitaxial layer and a plurality of electrode unit on top; and performing a complex process, which removes the second metal layer on the lower surface of the first metal layer and part of the first metal layer and performs cutting according to the number of the electrode unit, so as to form a plurality of epitaxial die. Each epitaxial die corresponds to an electrode unit to form a magnetic light-emitting element. The proposed method improves soft magnetic properties of an original substrate and enables dies to reverse spontaneously, thereby used perfectly for industrial mass transfer technology. | 2022-02-10 |
20220045238 | LIGHT EMITTING DEVICE AND WAFER - Provided is a light emitting device. A light emitting device includes a first n-type semiconductor layer, a first light emitting layer disposed on the first n-type semiconductor layer, a first p-type semiconductor layer disposed on the first light emitting layer, a second p-type semiconductor layer disposed on the first p-type semiconductor layer, a bonding layer disposed between the first p-type semiconductor layer and the second p-type semiconductor layer, a second light emitting layer disposed on the second p-type semiconductor layer, a second n-type semiconductor layer disposed on the second light emitting layer, a p-type electrode disposed on the second p-type semiconductor layer, a first n-type electrode disposed on the first n-type semiconductor layer, and a second n-type electrode disposed on the second n-type semiconductor layer. | 2022-02-10 |
20220045239 | GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME - The group III nitride semiconductor light emitting element according to this disclosure has, on a substrate, an n-type semiconductor layer, a light emitting layer, a p-type AlGaN electron blocking layer, a p-type contact layer and a p-side reflection electrode, in this order, wherein, a center emission wavelength of light emitted from the light emitting layer is 250 nm or greater and 330 nm or smaller, the Al composition ratio of the p-type AlGaN electron blocking layer is 0.40 or greater and 0.80 or smaller, the film thickness of the p-type contact layer is 10 nm or greater and 50 nm or smaller, and the p-type contact layer has a p-type AlGaN contact layer having Al composition ratio of 0.03 or greater and 0.25 or smaller. | 2022-02-10 |
20220045240 | EPITAXIAL FORMATION SUPPORT STRUCTURES AND ASSOCIATED METHODS - Epitaxial formation support structures and associated methods of manufacturing epitaxial formation support structures and solid state lighting devices are disclosed herein. In several embodiments, a method of manufacturing an epitaxial formation support substrate can include forming an uncured support substrate that has a first side, a second side opposite the first side, and coefficient of thermal expansion substantially similar to N-type gallium nitride. The method can further include positioning the first side of the uncured support substrate on a first surface of a first reference plate and positioning a second surface of a second reference plate on the second side to form a stack. The first and second surfaces can include uniformly flat portions. The method can also include firing the stack to sinter the uncured support substrate. At least side of the support substrate can form a planar surface that is substantially uniformly flat. | 2022-02-10 |
20220045241 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A display device includes: a first alignment electrode and a second alignment electrode on a substrate, the first and second alignment electrodes extending in a first direction and being spaced apart from each other; an amorphous silicon layer on the first alignment electrode and the second alignment electrode, the amorphous silicon layer having an insulating portion covering the first alignment electrode and an electrode portion covering the second alignment electrode, the electrode portion of the amorphous silicon layer including an N-type dopant; a light emitting element on the amorphous silicon layer, one end of the light emitting element being on the insulating portion and another end of the light emitting element contacting the electrode portion of the amorphous silicon layer; a first insulating layer on the light emitting element and extending in the first direction; and a first electrode contacting the one end of the light emitting element. | 2022-02-10 |
20220045242 | LED MODULE, METHOD FOR MANUFACTURING LED MODULE, AND CIRCUIT BOARD - An LED module includes a first electrode and a second electrode disposed on the substrate, an LED chip disposed on the first electrode and the second electrode, and a first bump between the LED chip and the first electrode, and a second bump between the LED chip and the second electrode. The LED chip includes a cathode electrode facing the first electrode, an anode electrode facing the second electrode, and a step portion between the cathode electrode and the anode electrode, a distance between the first electrode and the cathode electrode is larger than a distance between the second electrode and the anode electrode, and the first bump is disposed to embed the step portion. | 2022-02-10 |
20220045243 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A semiconductor light-emitting element includes: an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material; an active layer provided on the n-type semiconductor layer and made of an AlGaN-based semiconductor material; a p-type semiconductor layer provided on the active layer; and a p-side contact electrode that includes an Rh layer in contact with an upper surface of the p-type semiconductor layer and having a thickness of 10 nm or smaller and an Al layer in contact with an upper surface of the Rh layer and having a thickness of 20 nm or larger. | 2022-02-10 |
20220045244 | LIGHT EMITTING ELEMENT, DISPLAY DEVICE USING THE SAME, AND METHOD OF FABRICATING DISPLAY DEVICE - A light emitting device may include a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the active layer; an electrode layer disposed on the second semiconductor layer; a protective layer disposed on the electrode layer; and an insulating film enclosing outer circumferential surfaces of at least the first semiconductor layer, the active layer, the second semiconductor layer, and the electrode layer, and exposing a surface of the first semiconductor layer and a surface of the protective layer. | 2022-02-10 |
20220045245 | PHOSPHOR CONVERTER STRUCTURES FOR THIN FILM PACKAGES AND METHOD OF MANUFACTURE - Light emitting devices (LEDs) and methods of manufacturing LEDs are described. A method includes providing a layer of a wavelength converting material on a temporary tape. The wavelength converting material includes at least a binder or matrix material, particles of a non-luminescent material, and phosphor particles and has a concentration of 60%-90% by volume particles of the non-luminescent material and phosphor particles. The layer of the wavelength converting material is separated on the temporary tape to form multiple wavelength converting structures, which are provided on an array type frame. Heat and pressure are applied to the wavelength converting structures on the array type frame. | 2022-02-10 |
20220045246 | LIGHT-EMITTING DEVICE - A light-emitting device includes a substrate; at least one light-emitting element on or above the substrate; a plate-shaped light-transmissive member having a lower surface that faces an upper surface of the at least one light-emitting element; a covering member that covers a lateral surface of the at least one light-emitting element and a lateral surface of the light-transmissive member; and a light-guiding member that is disposed between the light-emitting element and the light-transmissive member. In a plan view, a first lateral side of an upper surface of the light-transmissive member is outside a first lateral side of the upper surface of the at least one light-emitting element, and a second lateral side of the upper surface of the light-transmissive member is inside a second lateral side of the upper surface of the at least one light-emitting element. | 2022-02-10 |
20220045247 | OPTOELECTRONIC MODULES INCLUDING AN OPTICAL EMITTER AND OPTICAL RECEIVER - An apparatus includes an optoelectronic module including a light emitting die and a light receiver die mounted on a PCB substrate. The optoelectronic module further includes an optical element on the light emitting die and an optical element on the light receiver die, the optical elements being composed of a first epoxy. A second epoxy laterally surrounds and is in contact with respective side surfaces of the light emitting die, the light receiver die and the optical elements, wherein the second epoxy provides an optical barrier between the light emitting die and the light receiver die. A method of manufacturing such modules is described as well. | 2022-02-10 |
20220045248 | MICRO-LED DISPLAY - A micro-LED display includes a casing, a light-transmitting cover, a micro-LED array substrate, a circuit board, and at least one functional component. The light-transmitting cover is disposed on the casing and has a display area, a non-display area, and a plurality of first vias. The first vias are located in the display area. The micro-LED array substrate is disposed between the light-transmitting cover and the casing. The micro-LED array substrate has a plurality of second vias overlapped with the first vias in an orthogonal projection direction. The circuit board is disposed between the micro-LED array substrate and the casing, and the circuit board has a functional component disposing area overlapped with the display area in the orthogonal projection direction. The functional component is disposed in the functional component disposing area. The functional component is overlapped with the second vias in the orthogonal projection direction. | 2022-02-10 |
20220045249 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT HAVING A FIRST AND SECOND METAL LAYER AND METHOD FOR PRODUCING THE OPTOELECTRONIC SEMICONDUCTOR COMPONENT - An optoelectronic semiconductor component may include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active zone, wherein the first semiconductor layer and the second semiconductor layer are patterned to form a mesa so that parts of the second semiconductor layer are not covered by the first semiconductor layer and a portion of the active zone is exposed in the area of a mesa flank. The optoelectronic semiconductor component may include a passivation layer arranged over parts of the first semiconductor layer and over parts of the second semiconductor layer and over the exposed portion of the active zone. The optoelectronic semiconductor component furthermore contains a first metal layer and a second metal layer. The second metal layer covers the passivation layer in the area of the mesa flank. | 2022-02-10 |
20220045250 | WIRING BOARD, AND LIGHT EMITTING DEVICE AND DISPLAY DEVICE USING SAME - A wiring board includes: a glass substrate serving as a substrate, which includes a first surface, a second surface which is opposite to the first surface, and a side surface; an input electrode serving an electrode, which is located close to a side of the first surface; an insulating layer disposed on the glass substrate; and a side wiring disposed so as to extend from the input electrode via the side surface to the second surface. An end of the insulating layer located close to the side is provided with a cutaway portion extending in an inward direction of the insulating layer, the input electrode is disposed in an entrance-side part of the cutaway portion, and the cutaway portion includes a bottom-side part constituting an inward area which is free of the input electrode. | 2022-02-10 |
20220045251 | LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE, AND LIGHTING TOOL FOR VEHICLE - A light emitting device, according to the present embodiment, has a light emitting panel, a flexible wiring substrate, a mold resin and a protective tape. The light emitting panel has a first substrate, which is transparent to light, a plurality of conductor patterns, which are formed on a surface of the first substrate, a plurality of light emitting elements, which are connected to any of the conductor patterns, and a resin layer, which holds the light emitting elements on the first substrate. The flexible wiring substrate has a circuit pattern that is electrically connected with an exposed part of the conductor patterns. The mold resin covers the exposed part of the conductor patterns and an exposed part of the circuit pattern. The protective tape covers the mold resin, and is wound around a joint part of the light emitting panel and the flexible wiring substrate. | 2022-02-10 |
20220045252 | BONDING DEVICE AND METHOD IN MICROCOMPONENT PROCESS AND WELDING-AGENT PLACING UNIT - The disclosure herein relates to a bonding device and a bonding method used in a microcomponent process, and a welding-agent placing unit. The method includes the following. A microcomponent to-be-bonded is peeled from a substrate, picked up and transferred, by a transfer unit, the microcomponent to-be-bonded to a welding-agent placing unit so as to make the electrode to-be-bonded adhere to the molten welding agent from a welding-agent hole in the welding-agent placing unit. The microcomponent to-be-bonded with molten welding agent is transferred to a driving backplate so as to realize the bonding process between the microcomponent to-be-bonded and the driving backplate after cooling of welding agent. | 2022-02-10 |
20220045253 | LIGHT EMITTING DIODE PACKAGES - Solid-state lighting devices including light-emitting diodes (LEDs) and LED packages are disclosed. LED packages are provided with improved thermal and/or electrical coupling between LED chips and submounts or lead frames. Various configurations of submounts with via arrangements are disclosed to provide improved coupling between LED chips and submounts. LED chip contacts are disclosed with one or more openings that are registered with vias to provide more uniform mounting. Multiple LED chips may be arranged around a thermally conductive element on a submount, and a via in the submount may be registered with the thermally conductive element. Subassemblies are provided between LED chips and lead frames to improve electrical and thermal coupling. Underfill materials may be arranged between LED chips and lead frames to provide improved mechanical support. | 2022-02-10 |
20220045254 | Semiconductor Device and Method - In an embodiment, a device includes: an interconnect structure including a first contact pad, a second contact pad, and an alignment mark; a light emitting diode including a cathode and an anode, the cathode connected to the first contact pad; an encapsulant encapsulating the light emitting diode; a first conductive via extending through the encapsulant, the first conductive via including a first seed layer, the first seed layer contacting the second contact pad; a second conductive via extending through the encapsulant, the second conductive via including a second seed layer, the first seed layer and the second seed layer including a first metal; and a hardmask layer between the second seed layer and the alignment mark, the hardmask layer including a second metal, the second metal different from the first metal. | 2022-02-10 |
20220045255 | TIN OXIDE-BASED THERMOELECTRIC DEVICE - A thermoelectric module comprising nanostructured SnO and SnO | 2022-02-10 |
20220045256 | METHOD OF PRODUCING SHAPED PRODUCT FOR THERMOELECTRIC CONVERSION ELEMENT AND METHOD OF PRODUCING THERMOELECTRIC CONVERSION ELEMENT - A method of producing a shaped product for a thermoelectric conversion element is provided. The method comprises: mixing a coarse mixture that contains metal nanoparticle-supporting carbon nanotubes, a resin component, and a solvent by dispersion treatment that brings about a cavitation effect or a crushing effect, to obtain a composition for a thermoelectric conversion element; and removing the solvent from the composition for a thermoelectric conversion element. | 2022-02-10 |
20220045257 | THERMOELECTRIC ELEMENT ASSEMBLY, METHOD FOR MANUFACTURING THE SAME, AND THERMOELECTRIC MODULE COMPRISING THE SAME - Provided is a thermoelectric element assembly including a soft support including a plurality of through-holes, and a plurality of p-type thermoelectric elements and a plurality of n-type thermoelectric elements inserted into a plurality of through-holes of the support, wherein a thickness of the support is less than a length of the thermoelectric element. | 2022-02-10 |
20220045258 | METHOD FOR MANUFACTURING INTERMEDIATE BODY FOR THERMOELECTRIC CONVERSION MODULE - A method for producing an intermediate for thermoelectric conversion modules may avoid a supporting substrate, enabling annealing of a thermoelectric semiconductor material in a form avoiding a joint to an electrode, and enabling annealing of a thermoelectric semiconductor material at an optimum temperature. Such methods may produce an intermediate for thermoelectric conversion modules containing a P-type thermoelectric and an N-type thermoelectric element layer of a thermoelectric semiconductor composition, and include (A) forming the P-type thermoelectric element layer and the N-type thermoelectric element layer on a substrate; (B) annealing the P-type and N-type thermoelectric element layer formed in (A); (C) forming a sealant layer containing a curable resin or a cured product thereof, on the P-type and N-type thermoelectric element layer annealed in (B); and (D) peeling the P-type and the N-type thermoelectric element layer and also the sealant layer formed in (B) and (C) from the substrate. | 2022-02-10 |
20220045259 | JOSEPHSON JUNCTION, JOSEPHSON JUNCTION PREPARATION METHOD AND APPARATUS, AND SUPERCONDUCTING CIRCUIT - A superconducting circuit having a Josephson junction includes a first electrode layer for signal transmission; a second electrode layer for signal transmission; and an insulating layer arranged between the first electrode layer and the second electrode layer to form a Josephson junction, wherein, the first electrode layer and the second electrode layer are composed of a preset material, the insulating layer is composed of a compound corresponding to the preset material, and the preset material includes a non-aluminum superconducting material to prolong a coherence time of superconducting qubits. | 2022-02-10 |
20220045260 | Electro-Formed Metal Foils - A process for producing a cube textured foil is described. The process includes providing a cube textured metal foil M. The process further includes electroplating an epitaxial layer of an alloy on the foil M, whereby the epitaxial layer substantially replicates the cube texture of the metal foil M. The process further includes electroplating a non-epitaxial layer of an alloy on the epitaxial layer. The process further includes separating the electroplated alloy from the cube textured metal foil M to obtain an electro-formed alloy with one cube textured surface. | 2022-02-10 |
20220045261 | PIEZOELECTRIC DEVICE - A piezoelectric device includes a membrane portion including a single-crystal piezoelectric layer, an upper electrode layer, and a lower electrode layer. The upper electrode layer is on a first surface. The lower electrode layer is on a second surface facing at least a portion of the upper electrode layer sandwiching the single-crystal piezoelectric layer. The single-crystal piezoelectric layer includes piezoelectric body cleavage directions extending along a boundary line between a cleavage plane occurring when the single-crystal piezoelectric layer is cleaved and the first surface. When viewed in a vertical direction, at least a portion of an upper electrode outer edge and at least a portion of a lower electrode outer edge are non-parallel to at least one of the piezoelectric body cleavage directions. | 2022-02-10 |
20220045262 | PIEZOELECTRIC DEVICE - A piezoelectric device includes a base portion and an upper layer on an upper side of and supported by the base portion. The upper layer includes a membrane portion that does not overlap with the base portion in plan view. The membrane portion includes at least one piezoelectric layer sandwiched by electrode layers from a top and a bottom thereof. An intermediate layer is between a lower electrode and the base portion. The intermediate layer includes one or more individual layers, and an individual layer exposed as a lower surface of the membrane portion among the one or more individual layers includes a bent portion, which extends from the lower surface of the membrane portion to a lateral wall, on a boundary between a portion defining and functioning as the lower surface of the membrane portion and a portion overlapping with the base portion. | 2022-02-10 |
20220045263 | HEAT DISSIPATION COMPOSITE, LOWER PANEL SHEET, AND DISPLAY DEVICE INCLUDING THE SAME - A heat dissipation composite for a display device includes: a heat absorber; an electricity generator disposed on the heat absorber to convert heat from the heat absorber into electricity; and a vibrator disposed on the electricity generator to convert the electricity provided from the electricity generator into vibration. | 2022-02-10 |
20220045264 | SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor module and a method for manufacturing the same are provided. The semiconductor module includes a substrate comprising a front side and at least one semiconductor device formed on the front side, a shielding structure formed on the at least one semiconductor device, and a piezoelectric layer formed on the shielding structure. | 2022-02-10 |
20220045265 | HALL BAR DEVICE FOR MEMORY AND LOGIC APPLICATIONS - A hall bar device for a memory or logic application can include a gate electrode, a boron-doped chromia layer on the gate electrode; and a hall bar structure with four legs on the boron-doped chromia layer. For a memory application, the hall bar device can be written to by applying a pulse voltage across the gate electrode and one leg of the hall bar structure in the absence of an applied magnetic field; and can be read from by measuring a voltage across the one leg of the hall bar structure and its opposite leg. | 2022-02-10 |
20220045266 | MRAM STRUCTURE AND METHOD OF FABRICATING THE SAME - An MRAM structure includes a dielectric layer. A first MRAM, a second MRAM and a third MRAM are disposed on the dielectric layer, wherein the second MRAM is disposed between the first MRAM and the third MRAM, and the second MRAM includes an MTJ. Two gaps are respectively disposed between the first MRAM and the second MRAM and between the second MRAM and the third MRAM. Two tensile stress pieces are respectively disposed in each of the two gaps. A first compressive stress layer surrounds and contacts the sidewall of the MTJ entirely. A second compressive stress layer covers the openings of each of the gaps and contacts the two tensile material pieces. | 2022-02-10 |
20220045267 | MAGNETORESISTIVE ELEMENT HAVING A SIDEWALL-CURRENT-CHANNEL STRUCTURE - A magnetoresistive element comprises a nonmagnetic sidewall-current-channel (SCC) structure provided on a surface of the magnetic recording layer, which is opposite to a surface of the magnetic recording layer where the tunnel barrier layer is provided, and comprising an insulating medium in a central region of the SCC structure, and a conductive medium being a sidewall of the SCC structure and surrounding the insulating medium, making an electric current crowding inside the magnetic recording layer to achieve a higher spin-polarization degree for an applied electric current. | 2022-02-10 |
20220045268 | SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF - A semiconductor structure and a fabrication method thereof. The semiconductor structure, includes: a substrate; and magnetic tunnel junctions on the substrate, that each magnetic tunnel junction of the magnetic tunnel junctions includes a first region and a second region adjacent to the first region, each magnetic tunnel junction includes a multilayered material including material layers stacked along a normal direction of the substrate, and the material layers of each magnetic tunnel junction include at least one material layer that is different in the first region and the second region. The storage capacity density of the semiconductor structure is high. | 2022-02-10 |
20220045269 | MAGNETORESISTIVE STACK/STRUCTURE AND METHOD OF MANUFACTURING SAME - A method of manufacturing a magnetoresistive stack/structure comprising (a) etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer, (b) depositing a first encapsulation layer on the sidewalls of the second magnetic region and over a surface of the dielectric layer, (c) thereafter: (i) etching the first encapsulation layer which is disposed over the dielectric layer using a first etch process, and (ii) etching re-deposited material using a second etch process, wherein, after such etching, a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region, (d) etching (i) through the dielectric layer to form a tunnel barrier and provide sidewalls thereof and (ii) etching the first magnetic region to provide sidewalls thereof, and (e) depositing a second encapsulation layer on the sidewalls of the tunnel barrier and first magnetic region. | 2022-02-10 |
20220045270 | MAGNESIUM ION BASED SYNAPTIC DEVICE - A method of fabricating a synaptic device is provided. The method includes forming a channel layer between a first terminal and a second terminal. The channel layer varies in resistance based on a magnesium concentration in the channel layer. The method further includes forming an electrolyte layer. The electrolyte layer includes a magnesium ion conductive material. A third terminal is formed over the electrolyte layer and applies a signal to the electrolyte layer and the channel layer. | 2022-02-10 |
20220045271 | PATTERNING OXIDATION RESISTANT ELECTRODE IN CROSSBAR ARRAY CIRCUITS - An example method includes: forming a bottom electrode on a substrate and forming a patterned mask layer on the bottom electrode; thermal oxidizing the bottom electrode layer via the patterned mask layer by applying a thermal process and a first plasma; removing a gaseous status of the bottom electrode oxide using a first vacuum purge; removing a solid status of the bottom electrode oxide by applying a second plasma; removing the gaseous status and the solid status of the bottom electrode oxide using a second vacuum purge to form a patterned bottom electrode; removing the patterned mask layer; forming a filament forming layer on the patterned bottom electrode; and a top electrode on the filament forming layer. The filament forming layer is configured to form a filament within the filament forming layer responsive to a switching voltage being applied to the filament forming layer. | 2022-02-10 |
20220045272 | COMPOUND, MATERIAL FOR ORGANIC ELECTROLUMINESCENT ELEMENTS, ORGANIC ELECTROLUMINESCENT ELEMENT, AND ELECTRONIC DEVICE - The present invention relates to a compound represented by the formula (1): | 2022-02-10 |
20220045273 | METHOD OF PREPARING FILM AND METHOD OF MANUFACTURING DISPLAY DEVICE - A method of preparing a thin film and a method of manufacturing a display device are disclosed. The method of preparing a thin film includes the following steps: providing a substrate having a film formation region and a non-film formation region surrounding the film formation region; forming a gas precursor repellent layer in the non-film formation region; and depositing a gas precursor on the film formation region by atomic deposition to form the film. The method of preparing a film and the method of manufacturing a display device of the present invention can effectively achieve the effect of limiting the boundary of the film by forming the gas precursor repellent layer in the non-film formation region, and finally eliminate the problem of boundary epitaxial caused by atomic deposition. | 2022-02-10 |
20220045274 | OFETS HAVING ORGANIC SEMICONDUCTOR LAYER WITH HIGH CARRIER MOBILITY AND IN SITU ISOLATION - An organic field effect transistor includes a channel structure defining an active area located between a source and a drain. The channel structure includes a photoalignment layer and an organic semiconductor layer disposed directly over the photoalignment layer. The photoalignment layer is configured to influence an orientation of molecules within the organic semiconductor layer and hence impact the mobility of charge carriers both within the active area and adjacent to the active area. | 2022-02-10 |
20220045275 | CROSS LINKED SURFACE COATING AND INTERFACIAL LAYER FOR A PEROVSKITE MATERIAL PHOTOVOLTAIC DEVICE - A method for producing a perovskite material photovoltaic device, the method comprising: depositing a layer comprising a fullerene or fullerene derivative on a perovskite material; depositing a cross-linking agent on the perovskite material or the layer comprising the fullerene or fullerene derivative, wherein the cross-linking agent comprises a silane, wherein the silane is a halosilyalkane; and depositing one or more polymers on the perovskite material or the layer comprising the fullerene or fullerene derivative. | 2022-02-10 |
20220045276 | ELECTROLUMINESCENT DEVICES - The present invention describes electronic devices and compositions that can be used in electronic devices. | 2022-02-10 |
20220045277 | ELECTROLUMINESCENT DEVICES - The present invention describes electronic devices and compositions that can be used in electronic devices. | 2022-02-10 |
20220045278 | Organic Salts For High Voltage Organic And Transparent Solar Cells - Photo-active devices including a substrate, a first electrode, an active layer including an organic salt or salt mixture that selectively or predominantly harvests light from the near infrared or infrared regions of the solar spectrum, and a second electrode. The devices are either visibly transparent or visibly opaque and can be utilized in single- or multi-junction devices. | 2022-02-10 |
20220045279 | ORGANIC ELECTROLUMINESCENCE DEVICE AND POLYCYCLIC COMPOUND FOR ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device includes a first electrode, a second electrode, and an emission layer disposed between the first electrode and the second electrode, wherein the emission layer includes a polycyclic compound represented by Formula 1, thereby showing improved emission efficiency. | 2022-02-10 |
20220045280 | OFETS HAVING MULTILAYER ORGANIC SEMICONDUCTOR WITH HIGH ON/OFF RATIO - An organic field effect transistor includes a channel structure having a photoalignment layer and an organic semiconductor layer disposed directly over the photoalignment layer, where a charge carrier mobility varies along a thickness direction of the channel structure. The channel structure may define an active area between a source and a drain of the transistor and may include alternating layers of at least two photoalignment layers and at least two organic semiconductor layers. Each photoalignment layer is configured to influence an orientation of molecules within an overlying organic semiconductor layer and hence impact the mobility of charge carriers within the device active area while also advantageously decreasing the OFF current of the device. | 2022-02-10 |
20220045281 | ORGANIC ELECTROLUMINESCENT COMPOUND AND ORGANIC ELECTROLUMINESCENT DEVICE COMPRISING THE SAME - The present disclosure relates to an organic electroluminescent compound and an organic electroluminescent device comprising the same. By comprising the organic electroluminescent compound according to the present disclosure, an organic electroluminescent device having a low driving voltage and/or a high luminous efficiency and/or a long lifespan can be provided. | 2022-02-10 |
20220045282 | COMPOSITION FOR ORGANIC OPTOELECTRONIC DEVICE, ORGANIC OPTOELECTRONIC DEVICE AND DISPLAY DEVICE - A composition for an organic optoelectronic device, an organic optoelectronic device including the same, and a display device, the composition including a first compound represented by Chemical Formula 1 and a second compound represented by a combination of Chemical Formula 2 and Chemical Formula 3, | 2022-02-10 |
20220045283 | COMPOSITION - An object of the present invention is to provide a composition capable of manufacturing an organic thin film transistor having excellent carrier mobility even under low temperature conditions. The composition of the present invention contains a compound represented by Formula (1) and an alcohol represented by Formula (S1). | 2022-02-10 |
20220045284 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - A compound comprising a ligand L | 2022-02-10 |
20220045285 | PLATINUM (II) SCHIFF BASE COMPLEXES WITH INCREASED EMISSION QUANTUM YIELD FOR RED OLED APPLICATIONS - Red-emitting platinum (II) Schiff base complexes with high emission quantum efficiency are prepared. These materials can be used to fabricate OLEDs. | 2022-02-10 |
20220045286 | ORGANOMETALLIC COMPOUND, LIGHT-EMITTING DEVICE INCLUDING THE SAME, AND ELECTRONIC APPARATUS - An organometallic compound represented by Formula 1, a light-emitting device including the same, and an electronic apparatus including the light-emitting device are disclosed. In Formula 1, the substituents are as described in more detail in the specification. | 2022-02-10 |
20220045287 | ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device of the present disclosure includes a first electrode, a second electrode oppositely disposed to the first electrode, and multiple organic layers disposed between the first electrode and the second electrode, wherein at least one organic layer among the multiple organic layers includes a fused polycyclic compound represented by Formula 1, thereby showing improved emission efficiency. | 2022-02-10 |
20220045288 | MOTHER SUBSTRATE, DISPLAY PANEL, AND METHOD OF MANUFACTURING THE SAME - Provided is a mother substrate comprising a glass substrate including a plurality of cutting lines, an organic film overlapping the plurality of cutting lines on the glass substrate, and a plurality of cells spaced apart from each other with each of the plurality of cutting lines therebetween on the glass substrate. | 2022-02-10 |
20220045289 | MEMRISTOR DEVICE, METHOD OF FABRICATING THEREOF, SYNAPTIC DEVICE INCLUDING MEMRISTOR DEVICE AND NEUROMORPHIC DEVICE INCLUDING SYNAPTIC DEVICE - Disclosed are a memristor device, a method of fabricating the same, a synaptic device including a memristor device, and a neuromorphic device including a synaptic device. The disclosed memristor device may comprise a first electrode, a second electrode disposed to be spaced apart from the first electrode; and a resistance changing layer including a copolymer between the first electrode and the second electrode. The copolymer may be a copolymer of a first monomer and a second monomer, and the first polymer formed from the first monomer may have a property that diffusion of metal ions is faster than that of the second polymer formed from the second monomer. The second polymer may have a lower diffusivity of metal ions as compared with the first polymer. The first monomer may include vinylimidazole (VI). The second monomer may include 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3). The copolymer may include p(V3D3-co-VI). | 2022-02-10 |
20220045290 | RESISTIVE CHANGE ELEMENTS USING PASSIVATING INTERFACE GAPS AND METHODS FOR MAKING SAME - A method to fabricate a resistive change element. The method may include forming a stack over a substrate. The stack may include a conductive material, a resistive change material, a first surface, and a second surfaces opposite the first surface. The method may further include depositing a first material over the stack such that the first material directly contacts at least one of the first surface and the second surface of the stack. The method may also include after depositing the first material, forming a second material over the first material and evaporating a portion of the first material through the second material to create a gap between the second material and the at least one of the first surface and the second surface of the stack. | 2022-02-10 |
20220045291 | PHOTOELECTRIC CONVERSION ELEMENT, IMAGING DEVICE, AND OPTICAL SENSOR - An organic photoelectric conversion element, an imaging device, and an optical sensor, which can detect a plurality of wavelength regions by a single element structure, are provided. The photoelectric conversion element is formed by providing an organic photoelectric conversion portion including two or more types of organic semiconductor materials having different spectral sensitivities between the first and the second electrodes. Wavelength sensitivity characteristics of the photoelectric conversion element change according to a voltage (bias voltage) applied between the first and the second electrodes. The photoelectric conversion element is mounted in the imaging device and the optical sensor. | 2022-02-10 |
20220045292 | PHOTOELECTRIC CONVERSION ELEMENT, MEASURING METHOD OF THE SAME, SOLID-STATE IMAGING DEVICE, ELECTRONIC DEVICE, AND SOLAR CELL - The present technology relates to a photoelectric conversion element, a measuring method of the same, a solid-state imaging device, an electronic device, and a solar cell capable of further improving a quantum efficiency in a photoelectric conversion element using a photoelectric conversion layer including an organic semiconductor material. The photoelectric conversion element includes two electrodes forming a positive electrode ( | 2022-02-10 |
20220045293 | LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME - A light-emitting device includes a first electrode, a second electrode facing the first electrode, a first emission layer between the first electrode and the second electrode, and a second emission layer between the first emission layer and the second electrode. The first emission layer includes a first compound and a second compound, the second emission layer includes a third compound and a fourth compound, the first compound and the second compound are different from each other, and the third compound and the fourth compound are different from each other. The fourth compound includes at least one of an electron transport compound and a bipolar compound. An electronic apparatus including the light-emitting device is also provided. | 2022-02-10 |
20220045294 | THREE STACK HYBRID WHITE OLED FOR ENHANCED EFFICIENCY AND LIFETIME - OLEDs containing a stacked hybrid architecture including a phosphorescent organic emissive unit and two fluorescent organic emissive units are disclosed. The stacked hybrid architecture includes a plurality of electrodes and a hybrid emissive stacked disposed between at least two of the electrodes. The stack contains at least three emissive units and at least two charge generation layers. At least one of the three emissive units is a phosphorescent organic emissive unit and at least two of the three emissive units are fluorescent organic emissive units. More specifically, the two fluorescent organic emissive units may be blue organic emissive units that emit light from the same or different color regions. | 2022-02-10 |
20220045295 | DISPLAY PANEL, DISPLAY DEVICE AND FABRICATING METHOD OF DISPLAY PANEL - A display panel comprises includes: a base substrate; a first electrode layer and a second electrode layer on a side of the base substrate; a light-emitting layer between the first electrode layer and the second electrode layer; and a carrier functional layer located at least one of between the first electrode layer and the light-emitting layer, and between the second electrode layer and the light-emitting layer. The light-emitting layer has a plurality of light-emitting portions with different emergent light wavebands; and the carrier functional layer has a plurality of carrier functional portions corresponding to the plurality of light-emitting portions, the plurality of carrier functional portions having molecular chains, which is formed by cross-linking of monomers containing functional groups under light irradiation. | 2022-02-10 |
20220045296 | DISPLAY DEVICE - A display device includes a base layer including first and second emission regions, first and second electrodes, a first organic layer in the first emission region, and a second organic layer in the second emission region. The first organic layer includes a first electron transport layer, a first auxiliary layer on the first electron transport layer, a first emission layer on the first auxiliary layer, a second auxiliary layer on the first emission layer, and a first hole transport layer on the second auxiliary layer. The second organic layer includes a second electron transport layer, a third auxiliary layer on the second electron transport layer, a second emission layer on the third auxiliary layer, a fourth auxiliary layer on the second emission layer, and a second hole transport layer on the fourth auxiliary layer. | 2022-02-10 |
20220045297 | DISPLAY PANEL - A display panel can include first, second and third subpixels on a substrate; an overcoat layer in the first, second and third subpixels; a concave area and a convex area in the overcoat layer in at least one of the first, second and third subpixels, the concave area being connected to the convex area through a first inclined surface of the overcoat layer; first, second and third anode electrodes corresponding to the first, second and third subpixels, respectively, at least one of the first, second and third anode electrodes includes a second inclined surface overlapping with the first inclined surface of the overcoat layer; first, second and third organic light emitting layers on the first, second and third anode electrodes, respectively; and a bank layer on the overcoat layer, the bank layer including a third inclined surface, at least one of the first, second and third inclined surfaces reflects light. | 2022-02-10 |
20220045298 | MANUFACTURING METHOD OF OLED DISPLAY PANEL AND OLED DISPLAY PANEL - The manufacturing method provided by this application comprises: providing a substrate on which a plurality of pixel defining layers are arranged at intervals; disposing a hole injection layer on the substrate; disposing a hole transport layer on the hole injection layer; disposing an organic light emitting layer on the hole transport layer; disposing an electron transport layer on the organic light emitting layer and the pixel defining layers; and disposing a cathode metal layer on the electron transport layer, wherein the cathode metal layer comprises a first area located above the pixel defining layers; and processing the cathode metal layer in the first area. | 2022-02-10 |
20220045299 | DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE - A display panel and a method for manufacturing the same, and a display device. The display panel includes a first display area and a second display area. A light transmittance of the first display area is greater than a light transmittance of the second display area, and the display panel includes: a substrate; and a light-emitting element layer including a first electrode, a light-emitting structure located on the first electrode, and a second electrode assembly located on the light-emitting structure. The second electrode assembly includes: a light-transmitting electrode, at least partially located in the first display area; a light-transmitting block located in the first display area and stacked with the light-transmitting electrode; and a second electrode located in the second display area. A material of the second electrode and a material of the light-transmitting electrode nonbind with each other. | 2022-02-10 |
20220045300 | DISPLAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, DISPLAY DEVICE - A display substrate, a manufacturing method thereof, and a display device are provided. A pixel region is provided with a light emission function layer on a base substrate of the display substrate, and a separation region is provided with at least one first barrier structure. The first barrier structure includes a stopper pattern and a first separation component. A side surface of the first separation component has a recess, and a portion of the light emission function layer extending to the separation region is disconnected on the side of the first separation component. The separation region is provided with an inorganic layer structure on the base substrate. The inorganic layer structure includes multiple stacked inorganic film layers, the stopper pattern is located between two adjacent inorganic film layers and the first separation component is located on a side of the inorganic layer structure away from the base substrate. | 2022-02-10 |
20220045301 | DISPLAY APPARATUS - A display apparatus includes a substrate including a display area and a peripheral area, a thin film transistor including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, a first inorganic insulating layer located on the substrate and under the gate electrode and covering the semiconductor layer, a second inorganic insulating layer located on the first inorganic insulating layer and covering the gate electrode, a third inorganic insulating layer located on the second inorganic insulating layer and including a 1-3th opening in the peripheral area, an organic insulating layer located on the third inorganic insulating layer, covering the source electrode and the drain electrode, and including a second opening overlapping the 1-3th opening in the peripheral area, and a pattern portion located on a layer under the organic insulating layer and overlapping the 1-3th opening and the second opening. | 2022-02-10 |
20220045302 | DISPLAY DEVICE AND ORGANIC LIGHT-EMITTING DIODE PANEL THEREOF, AND METHOD FOR MANUFACTURING ORGANIC LIGHT-EMITTING DIODE PANEL - The present disclosure provides a display device and an OLED panel thereof, and a method for manufacturing an OLED panel. The OLED panel includes: a substrate ( | 2022-02-10 |
20220045303 | DISPLAY DEVICE - A TFT layer; a light-emitting element layer including a first electrode, a light-emitting layer, and a second electrode; a wavelength conversion layer formed above the light-emitting element layer and being configured to convert a color of light from the light-emitting layer; a dielectric layer formed above the wavelength conversion layer; and a particle layer formed above the dielectric layer and including metal nanoparticles including a core and a shell around the core. | 2022-02-10 |
20220045304 | DISPLAY PANEL AND DISPLAY APPARATUS - A display panel and a display apparatus are provided. The display panel includes a substrate, a light-emitting component layer and a light-extraction layer. An orthographic projection of a first-color light-emitting component of the light-emitting component layer overlaps with an orthographic projection of a first light-extraction structure of the light-extraction layer. An orthographic projection of the first light-extraction structure overlaps with an orthographic projection of the first-color light-emitting component. First light-extraction structures includes first sidewalls including first sub-sidewall and second sidewalls. A maximum angle α1 formed between a tangent plane of the first sidewall and the plane of the substrate is greater than a maximum angle α2 formed between a tangent plane of the second sub-sidewall and the plane of the substrate. | 2022-02-10 |
20220045305 | Flexible Cover Window and Flexible Device Including the Same - Provided are a flexible cover window and a flexible device including the same. More particularly, a flexible cover window which has excellent visibility and is flexible and a flexible device including the same are provided. | 2022-02-10 |
20220045306 | OLED DISPLAY PANEL AND ELECTRONIC DEVICE - An organic light-emitting diode (OLED) display panel and an electronic device are disclosed. The OLED display panel includes a display area having a light-emitting area and a non-light emitting area. The OLED display panel includes a cover. The cover includes a base layer, a color resist layer, a black matrix layer, a planarization layer, and a first optical compensation layer. The first optical compensation layer is located corresponding to the black matrix layer. | 2022-02-10 |
20220045307 | METHODS, SYSTEMS, AND COMPOSITIONS FOR THE LIQUID-PHASE DEPOSITION OF THIN FILMS ONTO THE SURFACE OF BATTERY ELECTRODES - Methods, systems, and compositions for the liquid-phase deposition (LPD) of thin films. The thin films can be coated onto the surface of porous components of electrochemical devices, such as battery electrodes. Embodiments of the present disclosure achieve a faster, safer, and more cost-effective means for forming uniform, conformal layers on non-planar microstructures than known methods. In one aspect, the methods and systems involve exposing the component to be coated to different liquid reagents in sequential processing steps, with optional intervening rinsing and drying steps. Processing may occur in a single reaction chamber or multiple reaction chambers. | 2022-02-10 |
20220045308 | FABRICATION METHOD OF POSITIVE ELECTRODE FOR SECONDARY BATTERY AND SECONDARY BATTERY INCLUDING THE POSITIVE ELECTRODE - The present invention provides a fabrication method of a positive electrode for a secondary battery, including: (a) heating a slurry composition for a positive electrode containing a positive electrode active material, a binder, and a solvent to a temperature lower than a boiling point (17:0) of the solvent; (b) applying the heated slurry composition for a positive electrode onto current collector; and (c) cooling the applied slurry composition for a positive electrode. | 2022-02-10 |
20220045309 | SYSTEM AND METHOD FOR MANUFACTURING POSITIVE ELECTRODE FOR SECONDARY BATTERY - A system for manufacturing a positive electrode for a secondary battery includes an unwinder wound with a positive electrode base material, a first coating unit for coating an insulating material at predetermined positions about widthwise edges of the base material with respect to a transfer direction of the base material supplied from the unwinder, a first drying furnace for drying the insulating material by heating the base material coated with the insulating material, a second coating unit for coating a positive electrode slurry on the base material supplied from the first drying furnace in a region between the insulating material formed at both sides of the base material, and a second drying furnace for heating and drying the base material coated with the insulating material and the positive electrode slurry. | 2022-02-10 |
20220045310 | METHOD FOR MANUFACTURING ELECTRODE - A method of manufacturing an electrode includes: an application process of applying mixture slurry containing a dispersion medium and an electrode mixture that contains an electrode active material onto a surface of a core material sheet to form a first electrode plate having a wet coating film; a drying process of heating the first electrode plate at a first temperature to volatilize the dispersion medium from the wet coating film to form a second electrode plate having a dry coating film; and a firing process of heating the second electrode plate at a second temperature higher than the first temperature to obtain a fired third electrode plate. In the firing process, the second electrode plate is heated at the second temperature while being transported by a roll-to-roll method. | 2022-02-10 |
20220045311 | CONTINUOUS PROCESS FOR PRODUCING ELECTRODES AND ALKALI METAL BATTERIES HAVING ULTRA-HIGH ENERGY DENSITIES - A process for producing an electrode for an alkali metal battery, comprising: (a) Continuously feeding an electrically conductive porous layer to an anode or cathode material impregnation zone, wherein the conductive porous layer has two opposed porous surfaces and contain interconnected conductive pathways and at least 70% by volume of pores; (b) Impregnating a wet anode or cathode active material mixture into the porous layer from at least one of the two porous surfaces to form an anode or cathode electrode, wherein the wet anode or cathode active material mixture contains an anode or cathode active material and an optional conductive additive mixed with a liquid electrolyte; and (c) Supplying at least a protective film to cover the at least one porous surface to form the electrode. | 2022-02-10 |
20220045312 | METHOD OF COATING A FLEXIBLE SUBSTRATE IN A R2R DEPOSITION SYSTEM, AND VAPOR DEPOSITION SYSTEM - A method of coating a flexible substrate in a roll-to-roll deposition system is described. The method includes unwinding the flexible substrate from an unwinding roll, the flexible substrate having a first coating on a first main side thereof; measuring a lateral positioning of the first coating while guiding the flexible substrate to a coating drum; adjusting a lateral position of the flexible substrate on the coating drum depending on the measured lateral positioning of the first coating; and depositing a second coating on the flexible substrate, particularly on a second main side of the flexible substrate opposite the first main side. Further described is a vacuum deposition apparatus for conducting the methods described herein. | 2022-02-10 |
20220045313 | Fabrication Method of Negative Electrode for Secondary Battery and Secondary Battery Including Negative Electrode - The present invention provides a fabrication method of a negative electrode for a secondary battery, including: (a) heating a slurry composition for a negative electrode containing a negative electrode active material, a binder, and a solvent to a temperature lower than a boiling point (T | 2022-02-10 |
20220045314 | LITHIUM METAL BATTERY - The present invention relates to the field of battery materials, and in particular, to a lithium metal battery. The present invention provides a lithium metal battery, including a lithium metal negative electrode and a protective layer located on the lithium metal negative electrode. The protective layer includes a polymer Y, a polymer Z, and a polymer W. The polymer Y is selected from one or more of polyvinylidene fluoride or polyvinylidene fluoride-hexafluoropropylene. The polymer Z is selected from one or more of polytetrafluoroethylene or compounds denoted by Formula I, and the polymer W is selected from one or more of compounds denoted by Formula II and/or Formula III. The lithium metal battery provided in the present invention can form an interpenetrating polymer network structure through a chain entanglement effect between two or more polymers, thereby forming a polymer protective layer on a surface of the lithium negative electrode. | 2022-02-10 |
20220045315 | Battery with Spinel Cathode - Provided is an improved method for forming a battery comprising a cathode and electrolyte. The method of forming the cathode comprises forming a first solution comprising a digestible feedstock of a first metal suitable for formation of a cathode oxide precursor and a multi-carboxylic acid. The digestible feedstock is digested to form a first metal salt in solution wherein the first metal salt precipitates as a salt of deprotonated multi-carboxylic acid thereby forming an oxide precursor and a coating metal is added to the oxide precursor. The oxide precursor is heated to form the coated lithium ion cathode material. The electrolyte is void of salts and additives. | 2022-02-10 |
20220045316 | NEGATIVE ELECTRODE ACTIVE MATERIAL, NEGATIVE ELECTRODE, AND SECONDARY BATTERY - A negative electrode active material includes a first negative electrode active material particle, and the first negative electrode active material includes a silicon-based material. A Si2p spectrum obtained by measuring the first negative electrode active material particle in a state of 0.6 V (vs. Li/Li | 2022-02-10 |