| 06th week of 2014 patent applcation highlights part 16 |
| Patent application number | Title | Published |
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| 20140034892 | PHASE CHANGE MATERIAL GRADIENT STRUCTURES AND METHODS - Memory cells and memory cell structures having a number of phase change material gradients, devices utilizing the same, and methods of forming the same are disclosed herein. One example of forming a memory cell includes forming a first electrode material, forming a phase change material gradient on the first electrode material, and forming a second electrode material on the phase change material gradient. | 2014-02-06 |
| 20140034893 | SWITCH DEVICE AND CROSSBAR MEMORY ARRAY USING SAME - A switch device used in a crossbar memory array having a non-volatile memory includes: a laminated body formed of a semiconductor film and an insulating film laminated on the semiconductor film; and a pair of electrode layers having the laminated body therebetween. The semiconductor film is made of a semiconductor material having an I-V characteristic with a negative resistance region. | 2014-02-06 |
| 20140034894 | Insulator Material for Use in RRAM - The present disclosure relates generally to Hf-comprising materials for use in, for example, the insulator of a RRAM device, and to methods for making such materials. In one aspect, the disclosure provides a method for the manufacture of a layer of material over a substrate, said method including
| 2014-02-06 |
| 20140034895 | ELECTRONIC MEMORY DEVICE - An electronic device includes a first electrode, a second electrode, and a solid electrolyte made of an ion-conducting material, the first and second electrodes being configured to form a metal dendrite. The device further includes a third electrode, an interface layer contacting the third electrode and a third surface of the electrolyte, the interface layer being an ionic insulator and an electronic insulator. The third electrode and the dendrite are arranged such that the device has two resistive states. | 2014-02-06 |
| 20140034896 | Nonvolatile Memory Cells And Methods Of Forming Nonvolatile Memory Cells - A method of forming a nonvolatile memory cell includes forming a first electrode having a first current conductive material and a circumferentially self-aligned second current conductive material projecting elevationally outward from the first current conductive material. The second current conductive material is different in composition from the first current conductive material. A programmable region is formed over the first current conductive material and over the projecting second current conductive material of the first electrode. A second electrode is formed over the programmable region. In one embodiment, the programmable region is ion conductive material, and at least one of the first and second electrodes has an electrochemically active surface directly against the ion conductive material. Other method and structural aspects are disclosed. | 2014-02-06 |
| 20140034897 | METHOD FOR FORMING A PCRAM WITH LOW RESET CURRENT - Phase-change memory structures are formed with ultra-thin heater liners and ultra-thin phase-change layers, thereby increasing heating capacities and lowering reset currents. Embodiments include forming a first interlayer dielectric (ILD) over a bottom electrode, removing a portion of the first ILD, forming a cell area, forming a u-shaped heater liner within the cell area, forming an interlayer dielectric structure within the u-shaped heater liner, the interlayer dielectric structure including a protruding portion extending above a top surface of the first ILD, forming a phase-change layer on side surfaces of the protruding portion and/or on the first ILD surrounding the protruding portion, and forming a dielectric spacer surrounding the protruding portion. | 2014-02-06 |
| 20140034898 | SWITCHING DEVICE HAVING A NON-LINEAR ELEMENT - A switching device includes a substrate; a first electrode formed over the substrate; a second electrode formed over the first electrode; a switching medium disposed between the first and second electrode; and a nonlinear element disposed between the first and second electrodes and electrically coupled in series to the first electrode and the switching medium. The nonlinear element is configured to change from a first resistance state to a second resistance state on application of a voltage greater than a threshold. | 2014-02-06 |
| 20140034899 | GRAPHENE SEMICONDUCTOR AND ELECTRICAL DEVICE INCLUDING THE SAME - A graphene semiconductor including graphene and a metal atomic layer disposed on the graphene, wherein the metal atomic layer includes a metal, which is capable of charge transfer with the graphene. | 2014-02-06 |
| 20140034900 | WAVELENGTH CONVERTING MATERIAL - A wavelength converting material comprising a phosphate compound have a chemical formula of AB | 2014-02-06 |
| 20140034901 | WHITE LIGHT EMITTING DIODE PACKAGE - Disclosed is a light emitting diode package having a simplified configuration and high color reproducibility. The light emitting diode package includes a package body, first and second light emitting diode chips received in the package body, a lead frame electrically connected to the first and second light emitting diode chips, the lead frame serving to adjust color of light according to the ratio of current of the first and second light emitting diode chips, and a light conversion layer configured to cover the first and second light emitting diode chips, the light conversion layer serving to convert light emitted from the first and second light emitting diode chips into a particular wavelength of light so as to emit a desired wavelength of light. | 2014-02-06 |
| 20140034902 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. The active layer includes (T+1) barrier layers, T well layers between the (T+1) barrier layers, and a first dummy layer between N well layers adjacent to the second conductive semiconductor layer and N barrier layers adjacent to the N well layers, in which T>N≧1. | 2014-02-06 |
| 20140034903 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Disclosed is a light emitting device and a light emitting device package. The light emitting device includes a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer, wherein the active layer includes: a plurality of barrier layers; and a plurality of well layers between the barrier layers, and wherein at least two of the barrier layers have different energy bandpgaps and have different thicknesses. | 2014-02-06 |
| 20140034904 | LIGHT-EMITTING DEVICE - A light-emitting device has a first light-emitting structure a second light-emitting structure on a top surface of the first light-emitting structure, an insulation layer between a top surface of the first light-emitting structure and a bottom surface of the second light-emitting structure; and a first electrode contacted with the second conductive type semiconductor layer and the third conductive type semiconductor layer. The first electrode contacts the insulation layer and the first electrode has a thickness thicker than that of the insulating layer. | 2014-02-06 |
| 20140034905 | Epitaxially Thickened Doped or Undoped Core Nanowire FET Structure and Method for Increasing Effective Device Width - Techniques for increasing effective device width of a nanowire FET device are provided. In one aspect, a method of fabricating a FET device is provided. The method includes the following steps. A SOI wafer is provided having an SOI layer over a BOX. Nanowire cores and pads are etched in the SOI layer in a ladder-like configuration. The nanowire cores are suspended over the BOX. Epitaxial shells are formed surrounding each of the nanowire cores. A gate stack is formed that surrounds at least a portion of each of the nanowire cores/epitaxial shells, wherein the portions of the nanowire cores/epitaxial shells surrounded by the gate stack serve as channels of the device, and wherein the pads and portions of the nanowire cores/epitaxial shells that extend out from the gate stack serve as source and drain regions of the device. | 2014-02-06 |
| 20140034906 | CARBON NANOTUBE SEMICONDUCTOR DEVICES AND DETERMINISTIC NANOFABRICATION METHODS - Embodiments of the invention provide transistor structures and interconnect structures that employ carbon nanotubes (CNTs). Further embodiments of the invention provide methods of fabricating transistor structures and interconnect structures that employ carbon nanotubes. Deterministic nanofabrication techniques according to embodiments of the invention can provide efficient routes for the large-scale manufacture of transistor and interconnect structures for use, for example, in random logic and memory circuit applications. | 2014-02-06 |
| 20140034907 | NANOWIRE SENSOR HAVING NANOWIRE OF NETWORK STRUCTURE - A nanowire sensor having a nanowire in a network structure includes: source and drain electrodes formed over a substrate; a nanowire formed between the source and drain electrodes and having a network structure in which patterns of intersections are repeated; and a detection material fixed to the nanowire and selectively reacting with a target material introduced from outside. | 2014-02-06 |
| 20140034908 | Epitaxially Thickened Doped or Undoped Core Nanowire FET Structure and Method for Increasing Effective Device Width - Techniques for increasing effective device width of a nanowire FET device are provided. In one aspect, a method of fabricating a FET device is provided. The method includes the following steps. A SOI wafer is provided having an SOI layer over a BOX, wherein the SOI layer is present between a buried nitride layer and a nitride cap. The SOI layer, the buried nitride layer and the nitride cap are etched to form nanowire cores and pads in the SOI layer in a ladder-like configuration. The nanowire cores are suspended over the BOX. Epitaxial sidewalls are formed over the sidewalls of the nanowires cores. The buried nitride layer and the nitride cap are removed from the nanowire cores. A gate stack is formed that surrounds at least a portion of each of the nanowire cores and the epitaxial sidewalls. | 2014-02-06 |
| 20140034909 | THIN-FILM BALLISTIC SEMICONDUCTOR WITH ASYMMETRIC CONDUCTANCE - A thermoelectric structure comprises a thin thermoelectric film extending in a plane between parallel first and second shorting bars. A plurality of curved ballistic scattering guides are formed in a magnetic field region of the thin thermoelectric film subjected to a local, substantially uniform, nonzero magnetic field normal to the plane of the thin thermoelectric film. | 2014-02-06 |
| 20140034910 | ORGANIC DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - An organic display device and a method of manufacturing method thereof are provided. The organic display device includes scan lines, data lines and power lines. Portions crossed and defined by the scan lines, the data lines and the power supply lines are provide with display regions. The display region is formed with an organic light emitting diode. The organic light emitting diode includes an anode layer, and a conductive layer is formed on the power supply line. The anode layer of the organic light emitting diode and the conductive layer are etched and formed on the same basis of a material layer. | 2014-02-06 |
| 20140034911 | Organic Light-Emitting Diode - The present invention relates to an organic light-emitting diode, which includes: a light-transmitting substrate, an anode formed on the light-transmitting substrate, a hole transport layer formed on the anode, a light-emitting layer formed on the hole transport layer, an electron transport layer formed on the light-emitting layer, and a cathode formed on the electron transport layer. The light-emitting layer includes a plurality of pixel units, each of which includes red, green, blue, and infrared sub-pixel points. The red, green, blue, and infrared sub-pixel points are driven by thin-film transistors. The organic light-emitting diode of the present invention combines color displaying and infrared displaying in a single component and realizes switchability between color displaying and infrared displaying in the same component. The organic light-emitting diode greatly reduces the manufacture cost, shows wide applicability, and facilitates popularization | 2014-02-06 |
| 20140034912 | Organic Light-Emitting Diode - The present invention provides an organic light-emitting diode, which includes a light-transmitting substrate, an anode arranged on the light-transmitting substrate, a hole transporting layer arranged on the anode, a light emission layer arranged on the hole transporting layer, an electron transporting layer arranged on the light emission layer, and a cathode arranged on the electron transporting layer. The light emission layer includes a color light emission layer and an ultraviolet light emission layer spaced from the color light emission layer. The present invention integrates functions of color displaying and ultraviolet source together to allow the color displaying and the ultraviolet source to be simultaneously or individually activated. | 2014-02-06 |
| 20140034913 | CONDENSATION COMPOUND AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE SAME - A condensation compound is represented by Formula 1, 2, or 3 where R | 2014-02-06 |
| 20140034914 | Organic Electroluminescent Device; A Charge Transporting Material For The Organic Electroluminescent Device; And A Luminescent Device, A Display Device And A Lighting System Using The Organic Electroluminescent Device - An organic electroluminescent element comprising a substrate; a pair of electrodes including an anode and a cathode, disposed on the substrate; and at least one organic layer including a light emitting layer, disposed between the electrodes, wherein the light emitting layer includes a compound represented by the following general formula: | 2014-02-06 |
| 20140034915 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A heterocyclic compound is represented by Formula 1. | 2014-02-06 |
| 20140034916 | CONDENSED-CYCLIC COMPOUNDS AND ORGANIC LIGHT-EMITTING DIODES COMPRISING THE SAME - Condensed-cyclic organic compounds, synthetic methods for preparing the same and an organic light-emitting diode including the same are presented. The subject polycyclic triarylamines are prepared via a series of substitution and cyclization reactions. | 2014-02-06 |
| 20140034917 | ORGANIC LAYER DEPOSITION ASSEMBLY, ORGANIC LAYER DEPOSITION APPARATUS, ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic layer deposition assembly, an organic layer deposition apparatus, an organic light-emitting display apparatus, and a method of manufacturing the organic light-emitting display apparatus, in order to improve a characteristic of a deposited layer, the organic layer deposition assembly including a deposition source for discharging a deposition material; a deposition source nozzle unit disposed at a side of the deposition source, and including a plurality of deposition source nozzles; and a patterning slit sheet disposed while facing the deposition source nozzle unit, and including a plurality of patterning slits and one or more alignment confirmation pattern slits that are formed at edge portions of the plurality of patterning slits, wherein the deposition material that is discharged from the deposition source passes through the patterning slit sheet and then is formed on the substrate, while a deposition process is performed. | 2014-02-06 |
| 20140034918 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - Disclosed is an organic light emitting display device improving light efficiency by forming a metal layer having a nanometer thickness on a protective layer formed in order to protect the organic light emitting diode. | 2014-02-06 |
| 20140034919 | ORGANIC LIGHT EMITTING DISPLAY DEVICE WITH ENHANCED LIGHT EFFICIENCY AND MANUFACTURING METHOD THEREOF - An organic light emitting display device and a manufacturing method thereof are disclosed. In one aspect, the device includes a substrate, a first electrode formed over the substrate, an emission layer formed on the first electrode and a second electrode formed on the emission layer. The device also includes an encapsulation layer formed on the second electrode and a lens layer comprising a plurality of lenses formed in the encapsulation layer. | 2014-02-06 |
| 20140034920 | ORGANIC LIGHT EMITTING DEVICE AND METHOD FOR PREPARING THE SAME - The present invention relates to an organic light emitting device and a method for preparing the same. An organic light emitting device according to the present invention comprises an organic light emitting unit having a structure in which a substrate, a first electrode, an organic material layer, and a second electrode are sequentially laminated, wherein the organic light emitting device comprises an auxiliary electrode and a fuse pattern; and the first electrode and the auxiliary electrode are electrically connected to each other through the fuse pattern. | 2014-02-06 |
| 20140034921 | DISPLAY UNIT AND ELECTRONIC APPARATUS - A display unit comprising an organic layer between a light-emitting section portion of a first electrode layer and a light-emitting section portion of a second electrode layer. Light is emissible from within the organic layer. An aperture-defining insulating film is between a contact section of the first electrode layer and a gap section portion of the second electrode layer. The thickness of the gap section portion of the second electrode layer is greater than the thickness of the light-emitting section portion of the second electrode layer. | 2014-02-06 |
| 20140034922 | Phosphorescent Compound and Organic Light Emitting Diode Device Using the Same - The present invention provides a phosphorescent compound of following formula: | 2014-02-06 |
| 20140034923 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode display includes a substrate, a scan line on the substrate for transferring a scan signal, a data line crossing the scan line and for transferring a data signal, a driving voltage line crossing the scan line and for transferring a driving voltage, a switching thin film transistor coupled to the scan line and the data line, a driving thin film transistor coupled to a switching drain electrode of the switching thin film transistor, and an organic light emitting diode (OLED) coupled to a driving drain electrode of the driving thin film transistor, wherein a driving semiconductor layer of the driving thin film transistor is bent and in a plane substantially parallel to the substrate. | 2014-02-06 |
| 20140034924 | Heterocyclic Compound and Light-Emitting Device, Display Device, Lighting Device, and Electronic Device Using the Same - Provided is a compound having an indolo[3,2,1-jk]carbazole skeleton and a heterocyclic skeleton which are bonded to each other through an arylene group. The heterocyclic skeleton contains an imidazole skeleton, a pyrazine skeleton, a pyrimidine skeleton, a triazole skeleton, or a condensed heteroaromatic ring including any of these heterocycles. The high carrier-transport property and the large band gap of the compound allows the used as a host material of a phosphorescent dopant, leading to the formation of a green to blue emissive phosphorescent light-emitting element having high emission efficiency, low driving voltage, and reduced power consumption. | 2014-02-06 |
| 20140034925 | Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - A light-emitting element with low drive voltage, a light-emitting element with high current efficiency, and/or a light-emitting element with a long lifetime are/is provided. Specifically, a light-emitting element with low drive voltage, a light-emitting element with high current efficiency, and/or a light-emitting element with a long lifetime are/is provided by the use of an organic compound with a dibenzo[f,h]quinoxaline skeleton in a light-emitting layer. In a light-emitting element which includes a light-emitting layer containing an organic compound between a pair of electrodes, the organic compound has a 2,3-unsubstituted dibenzo[f,h]quinoxaline skeleton, a hole-transport skeleton selected from a substituted or unsubstituted dibenzothiophene skeleton, a substituted or unsubstituted dibenzofuran skeleton, and a substituted or unsubstituted carbazole skeleton, and an arylene skeleton, and the 2,3-unsubstituted dibenzo[f,h]quinoxaline skeleton and the hole-transport skeleton are bonded through the arylene skeleton. | 2014-02-06 |
| 20140034926 | Light-Emitting Element, Light-Emitting Device, Display Device, Electronic Appliance, and Lighting Device - A multicolor light-emitting element in which light-emitting layers emitting light of different colors are stacked and color adjustment is easily made is provided. A multicolor light-emitting element which is inexpensive and has favorable emission efficiency is provided. A light-emitting element in which at least two light-emitting layers emitting light of different colors are formed in contact with each other and the light emitted from the two light-emitting layers is obtained from exciplexes is provided. In addition, the light-emitting element in which the exciplexes emit delayed fluorescence is provided. | 2014-02-06 |
| 20140034927 | Light-Emitting Element, Light-Emitting Device, Display Device, Electronic Appliance, and Lighting Device - A multicolor light-emitting element using fluorescence and phosphorescence, which has a small number of manufacturing steps owing to a relatively small number of layers to be formed and is advantageous for practical application can be provided. In addition, a multicolor light-emitting element using fluorescence and phosphorescence, which has favorable emission efficiency is provided. A light-emitting element which includes a light-emitting layer having a stacked-layer structure of a first light-emitting layer exhibiting light emission from a first exciplex and a second light-emitting layer exhibiting phosphorescence is provided. | 2014-02-06 |
| 20140034928 | Organic Compound, Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - A novel organic compound having a high hole-transport property is provided. A long-lifetime light-emitting element is provided. An organic compound represented by General Formula (G0) is provided. In General Formula (G0), Ar | 2014-02-06 |
| 20140034929 | Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - A light-emitting element having a long lifetime is provided. A light-emitting element exhibiting high emission efficiency in a high luminance region is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains a first organic compound, a second organic compound, and a phosphorescent compound. The first organic compound is represented by a general formula (G0). The molecular weight of the first organic compound is greater than or equal to 500 and less than or equal to 2000. The second organic compound is a compound having an electron-transport property. In the general formula (G0), Ar | 2014-02-06 |
| 20140034930 | Light-Emitting Element - To provide a light-emitting element which uses a fluorescent material as a light-emitting substance and has higher luminous efficiency. To provide a light-emitting element which includes a mixture of a thermally activated delayed fluorescent substance and a fluorescent material. By making the emission spectrum of the thermally activated delayed fluorescent substance overlap with an absorption band on the longest wavelength side in absorption by the fluorescent material in an S | 2014-02-06 |
| 20140034931 | Light-Emitting Element, Light-Emitting Device, Electronic Device, Lighting Device, and Heterocyclic Compound - A light-emitting element with high heat resistance and high emission efficiency is provided. A novel heterocyclic compound that can be used in such a light-emitting element is provided. One embodiment of the present invention is a light-emitting element which includes, between a pair of electrodes, a layer containing a first organic compound, a second organic compound, and a light-emitting substance; the first organic compound includes one pyrimidine ring and one ring with a hole-transport skeleton; the second organic compound is an aromatic amine; and the light-emitting substance converts triplet excitation energy into light. A combination of the first organic compound, which includes the one pyrimidine ring and the one ring with the hole-transport skeleton, and the second organic compound, which is the aromatic amine, forms an exciplex. | 2014-02-06 |
| 20140034932 | Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - The light-emitting element has a structure in which a first organic compound and a second organic compound form an exciplex (excited complex) in a light-emitting layer. The S1 level and the T1 level of the formed exciplex are positioned extremely close to each other compared to the S1 level and the T1 level of the respective substances (the first organic compound and the second organic compound) before the formation of the exciplex. | 2014-02-06 |
| 20140034933 | THIN-FILM TRANSISTOR DEVICE AND METHOD FOR MANUFACTURING SAME, ORGANIC ELECTROLUMINESCENT DISPLAY ELEMENT, AND ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE - A thin film transistor element is formed in each of adjacent first and second apertures defined by partition walls. In plan view of a bottom portion of the first aperture, a center of area of a liquid-philic layer portion is offset from a center of area of the bottom portion in a direction opposite a direction of the second aperture, and in plan view of a bottom portion of the second aperture, a center of area of a liquid-philic layer portion is offset from a center of area of the bottom portion in a direction opposite a direction of the first aperture. | 2014-02-06 |
| 20140034934 | ORGANIC SEMICONDUCTOR COMPONENT COMPRISING A DOPED HOLE CONDUCTOR LAYER - An organic semiconductor component with a hole conductor layer having p-type doping with a superacid salt has greatly improved charged transport and optical properties. Besides increasing the specific conductivity at very low doping concentrations, the doping brings about substantially no negative change in the color impression of the layer for the human eye. The absorbtivity of the hole conductor layer is not increased in the visible wavelength range as a result of the p-type doping with the superacid salt. Deposition from solution and from the gas phase is possible. | 2014-02-06 |
| 20140034935 | COMPOUND HAVING SUBSTITUTED ORTHO-TERPHENYL STRUCTURE, AND ORGANIC ELECTROLUMINESCENT DEVICE - A light-emitting-layer host material is provided as material for high-efficiency organic electroluminescent devices. The light-emitting-layer host material has a high excitation triplet level, and is capable of completely confining the triplet excitons of phosphorescent material. A high-efficiency and high-luminance organic electroluminescent device is provided by using the compound. The compound is a compound of general formula (1) having a bipyridyl group and an ortho-terphenyl structure. The organic electroluminescent device includes a pair of electrodes, and one or more organic layers sandwiched between the pair of electrodes, and uses the compound as constituent material of at least one of the organic layers. | 2014-02-06 |
| 20140034936 | COMPOUND HAVING SUBSTITUTED TRIPHENYLENE RING STRUCTURE, AND ORGANIC ELECTROLUMINESCENT DEVICE - An organic compound having an excellent electron injection and transport performance is provided as a material for a low-power-consumption organic electroluminescent device. A low-power-consumption organic electroluminescent device is also provided by using the compound. The compound is a compound of general formula (1) or (2) having a substituted bipyridyl and triphenylene ring structure. The organic electroluminescent device includes a pair of electrodes, and one or more organic layers sandwiched between the pair of electrodes, and uses the compound as constituent material of at least one of the organic layers. | 2014-02-06 |
| 20140034937 | ORGANIC EL ELEMENT, ORGANIC EL PANEL HAVING ORGANIC EL ELEMENT, ORGANIC EL LIGHT-EMITTING APPARATUS, AND ORGANIC EL DISPLAY APPARATUS - An organic EL element includes: an anode; a cathode; a buffer layer; and a hole injection layer between the anode and the buffer layer, the hole injection layer including a nickel oxide including both nickel atoms with a valence of three and nickel atoms with a valence of two. In the hole injection layer, a ratio of the number of nickel atoms with a valence of three to the number of nickel atoms with a valence of two, expressed in percentage, is equal to or greater than 60%. | 2014-02-06 |
| 20140034938 | ORGANIC COMPOUND, CHARGE-TRANSPORTING MATERIAL, COMPOSITION CONTAINING THE COMPOUND, ORGANIC ELECTROLUMINESCENT ELEMENT, DISPLAY DEVICE, AND LIGHTING DEVICE - The invention provides an organic compound incorporating a specific structure into a pyridine skeleton or a 1,3,5-triazine skeleton and adapting the molecular weight to a specific range, a composition comprising the organic compound and a solvent, organic electroluminescent element comprising a layer that is formed by using the composition, and the uses thereof. | 2014-02-06 |
| 20140034939 | POLYMERIC MATERIAL, METHOD OF FORMING THE POLYMERIC MATERIAL, AND METHOD OF FORMING A THIN FILM USING THE POLYMERIC MATERIAL - An organic semiconductor device includes a thin film comprising a polycyclic aromatic compound in a polymer matrix, the thin film including a substantially uniform thickness, such that a thickness of the thin film varies by no greater than 1.0 micrometer over the thin film. | 2014-02-06 |
| 20140034940 | MATERIAL FOR AN ORGANIC OPTOELECTRONIC DEVICE, ORGANIC LIGHT EMITTING DIODE INCLUDING THE SAME, AND DISPLAY DEVICE INCLUDING THE ORGANIC LIGHT EMITTING DIODE - A material for an organic optoelectronic device, an organic light emitting diode including the same, and a display device including the organic light emitting diode, the material including at least one compound represented by the following Chemical Formula A-1; and at least one compound represented by the following Chemical Formula B-1: | 2014-02-06 |
| 20140034941 | PROCESS AND MATERIALS FOR MAKING CONTAINED LAYERS AND DEVICES MADE WITH SAME - There is provided a process for forming a contained second layer over a first layer, including the steps:
| 2014-02-06 |
| 20140034942 | ORGANIC ELECTROLUMINESCENCE DEVICE - A top-emitting organic electroluminescence device including sequentially a first electrode, one or more organic layers comprising an emitting layer, a second electrode and a capping layer, wherein the capping layer comprises a compound represented by the following formula (1): | 2014-02-06 |
| 20140034943 | PYRENE DERIVATIVE, ORGANIC LIGHT-EMITTING MEDIUM, AND ORGANIC ELECTROLUMINESCENT ELEMENT CONTAINING PYRENE DERIVATIVE OR ORGANIC LIGHT-EMITTING MEDIUM - An organic light-emitting medium including a pyrene derivative represented by the following formula (1) and a phenyl-substituted anthracene derivative represented by the following formula (2): | 2014-02-06 |
| 20140034944 | DISPLAY PANEL, THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - A thin film transistor (TFT) including a gate, a dielectric layer, a metal-oxide semiconductor channel, a source, and a drain is provided. The gate and the metal-oxide semiconductor channel are overlapped. The gate, the source, and the drain are separated by the dielectric layer. Besides, the source and the drain are respectively located on two opposite sides of the metal-oxide semiconductor channel. The metal-oxide semiconductor channel includes a metal-oxide semiconductor layer and a plurality of nano micro structures disposed in the metal-oxide semiconductor layer and separated from one another. In another aspect, a display panel including the TFT and a method of fabricating the TFT are also provided. | 2014-02-06 |
| 20140034945 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer. | 2014-02-06 |
| 20140034946 | OXIDE SEMICONDUCTOR STACKED FILM AND SEMICONDUCTOR DEVICE - An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10 | 2014-02-06 |
| 20140034947 | THIN FILM TRANSISTOR, DISPLAY PANEL, AND METHOD FOR FABRICATING THIN FILM TRANSISTOR - A thin film transistor includes a gate electrode ( | 2014-02-06 |
| 20140034948 | LED epitaxial Structure - An LED epitaxial structure includes the first layer thin film and the second layer thin film. The first layer thin film and the second layer thin film are polycrystalline aluminum nitride and single crystal aluminum nitride respectively, which have good thermal conductivity, insulation, mechanical intensity, and chemistry stability. Based on the substrate mentioned above, growing a single crystal gallium nitride on the second layer thin film as the third layer thin film allows the single crystal aluminum nitride and gallium nitride to have good lattice and thermal expansion match, resulting in the promotion of light emitting and thermal conduction efficiency. | 2014-02-06 |
| 20140034949 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first conductive layer, a first insulating layer over the first conductive layer, first and second oxide semiconductor layers over the first insulating layer, a second conductive layer over the first oxide semiconductor layer, a third conductive layer over the second oxide semiconductor layer, a fourth conductive layer over the first oxide semiconductor layer and the second oxide semiconductor layer, a second insulating layer over the second conductive layer, the third conductive layer, and the fourth conductive layer, a fifth conductive layer electrically connected to the first conductive layer over the second insulating layer, and a sixth conductive layer over the second insulating layer. Each of the first and fifth conductive layers includes an area overlapping with the first oxide semiconductor layer. The sixth conductive layer includes an area overlapping with the second oxide semiconductor layer. | 2014-02-06 |
| 20140034950 | Flat Panel Sensor And Flat Panel Detector - A flat panel sensor and a flat panel detector are provided on the basis of a top-gate TFT structure. The flat panel sensor comprises a base substrate, and a top-gate TFT and a storage capacitor that are formed on the base substrate; the storage capacitor includes a first conductive layer, a second conductive layer disposed in opposition to the first conductive layer, a third conductive layer for output of an electric signal, and a ground line; the first conductive layer is directly connected to a drain electrode and an active layer of the top-gate TFT, the second conductive layer is directly connected to the ground line, and the third conductive layer is connected to the first conductive layer through a via hole. | 2014-02-06 |
| 20140034951 | THIN FILM TRANSISTOR - A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is disposed on the substrate. The gate insulator is disposed over the gate. The silicon-rich channel layer is disposed above the gate, wherein the material of the silicon-rich channel layer is selected from a group consisting of silicon-rich silicon oxide (Si-rich SiOx), silicon-rich silicon nitride (Si-rich SiNx), silicon-rich silicon oxynitride (Si-rich SiOxNy), silicon-rich silicon carbide (Si-rich SiC) and silicon-rich silicon oxycarbide (Si-rich SiOC). The content (concentration) of silicon of the silicon-rich channel layer within a film depth between 10 nm to 170 nm ranges from about 1E23 atoms/cm | 2014-02-06 |
| 20140034952 | Liquid Crystal Display Device, Array Substrate and Manufacturing Method Thereof - The present invention provides a manufacturing method for array substrate, including: forming a first conductive layer, a first isolator layer, a second conductive layer and a second isolator layer on a substrate from bottom up, the first conductive layer for forming electrically connected scan line and control terminal of switch transistor, performing dry etch on the second isolator layer to form via hole, and forming a third conductive layer on the second isolator layer for forming data line. The present invention also provides an arrays substrate and a liquid crystal display device. As such, the present invention can reduce the possibility of electrostatic explosion during array substrate manufacturing process and improve the yield rate of array substrate. | 2014-02-06 |
| 20140034953 | DISPLAY DEVICE - A display device includes a first substrate and a second substrate facing each other, a thin film transistor on the first substrate, a color filter and a black matrix on the first substrate, a column spacer on the first substrate and electrically connected to the thin film transistor, a pixel electrode on one surface of the second substrate, a common electrode on the pixel electrode on the one surface of the second substrate, and a transparent electrode on the other surface of the second substrate. The column spacer is electrically connected to the pixel electrode. | 2014-02-06 |
| 20140034954 | SEMICONDUCTOR DEVICE - To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor where a dielectric film is provided between a pair of electrodes, an insulating film provided over the light-transmitting semiconductor film, and a light-transmitting conductive film provided over the insulating film. In the capacitor, a metal oxide film containing at least indium (In) or zinc (Zn) and formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the light-transmitting conductive film serves as the other electrode, and the insulating film provided over the light-transmitting semiconductor film serves as the dielectric film. | 2014-02-06 |
| 20140034955 | Nano-MOS Devices and Method of Making - The present invention discloses a method of making nano-MOS devices having a metal gate, thereby avoiding the poly depletion effect, and enhancing the MOS device's performance. The method forms metal gates by depositing a metal film over sidewall surfaces on two sides of a polycrystalline semiconductor layer. The metal in the metal film diffuses toward the sidewall surfaces of the polycrystalline semiconductor layer and forms, after annealing, metal-semiconductor compound nanowires (i.e., metal gates) on the sidewall surfaces of the polycrystalline semiconductor layer. Thus, high-resolution lithography is not required to form metal compound semiconductor nanowires, resulting in significant cost saving. At the same time, a nano-MOS device is also disclosed, which includes a metal gate, thereby avoiding the poly depletion effect, and resulting in enhanced MOS device performance. | 2014-02-06 |
| 20140034956 | Asymmetric Gate MOS Device and Method of Making - An asymetric gate MOS device is disclosed. The gate is a metal gate, and the metal gate has a different work function on the source side from that on the drain side of the MOS device, so that the overall performance parameters of the MOS device are more optimized. A method of making an asymetric gate MOS device is also disclosed. In the method, dopant ions are implanted into the gate of the MOS device, so as to cause the gate to have a different work function on the source side from that on the drain side of the MOS device. As a result, the overall performance parameters of the MOS device are more optimized. The method can be easily implemented. | 2014-02-06 |
| 20140034957 | Index-Matched Insulators - Devices are described including a first component and a second component, wherein the first component comprises a Group III-N semiconductor and the second component comprises a bimetallic oxide containing tin, having an index of refraction within 15% of the index of refraction of the Group III-N semiconductor, and having negligible extinction coefficient at wavelengths of light emitted or absorbed by the Group III-N semiconductor. The first component is in optical contact with the second component. Exemplary bimetallic oxides include Sn | 2014-02-06 |
| 20140034958 | LIGHT EMITTING DEVICE - A light emitting device is disclosed. The light emitting device includes a first-conductive-type semiconductor layer, a second-conductive-type semiconductor layer, and an active layer interposed between the first-conductive-type semiconductor layer and the second-conductive-type semiconductor layer. The second-conductive-type semiconductor layer includes an electron blocking region closely disposed to the active layer and having a pattern with a plurality of elements spaced apart from each other. | 2014-02-06 |
| 20140034959 | III-Nitride Semiconductor Device with Stepped Gate - A III-nitride heterojunction power semiconductor device that includes a passivation body with a gate well having a top mouth that is wider than the bottom mouth thereof, and a method of fabrication for the same. | 2014-02-06 |
| 20140034960 | ELECTRONIC DEVICES WITH YIELDING SUBSTRATES - In accordance with certain embodiments, a semiconductor die is adhered directly to a yielding substrate with a pressure-activated adhesive notwithstanding any nonplanarity of the surface of the semiconductor die or non-coplanarity of the semiconductor die contacts. | 2014-02-06 |
| 20140034961 | SURFACE-MODIFIED SEMICONDUCTOR, METHOD OF MAKING THE SEMICONDUCTOR, AND METHOD OF ARRANGING PARTICLES - The terminating layer that covers the top layer of a GaN-based semiconductor having a principal surface which is either a non-polar plane or a semi-polar plane, is removed by performing an organic solvent cleaning process step, and replaced with an organic solvent cleaned layer. Next, by irradiating the semiconductor with an ultraviolet ray, the organic solvent cleaned layer is removed to form a surface-modified layer instead. By performing these process steps, the top layer of the GaN-based semiconductor becomes the surface-modified layer and an electrical polarity is given to the surface of the GaN-based semiconductor. As a result, the hydrophilicity, hydrophobicity and wettability of the GaN-based semiconductor can be controlled. | 2014-02-06 |
| 20140034962 | Normally-Off Compound Semiconductor Tunnel Transistor with a Plurality of Charge Carrier Gases - A tunnel transistor includes a first compound semiconductor, a second compound semiconductor on the first compound semiconductor, and a third compound semiconductor on the second compound semiconductor. A source extends through the second compound semiconductor into the first compound semiconductor. A drain spaced apart from the source extends through the third compound semiconductor into the second compound semiconductor. A first two-dimensional charge carrier gas extends in the first compound semiconductor from the source toward the drain and ends prior to reaching the drain. A second two-dimensional charge carrier gas extends in the second compound semiconductor from the drain toward the source and ends prior to reaching the source. A gate is over the first and second two-dimensional charge carrier gases. A corresponding method of manufacturing the tunnel transistor is also provided. | 2014-02-06 |
| 20140034963 | DEVICE HAVING REDUCED BIAS TEMPERATURE INSTABILITY (BTI) - A semiconductor device is disclosed along with methods for manufacturing such a device. In certain embodiments, the semiconductor device includes a source electrode formed using a metal that limits a shift, such as due to bias temperature instability, in a threshold voltage of the semiconductor device during operation. In certain embodiments the semiconductor device may be based on silicon carbide. | 2014-02-06 |
| 20140034964 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first and a second transistor. The first transistor includes a first and a second region of a first conductivity type and a third region of a second conductivity type. The first region is disposed along a first crystal face of a silicon carbide region. The silicon carbide region has the first crystal face and a second crystal face. The second and the third region are disposed along the first face. The third region is provided between the first and the second region. The second transistor includes a fourth and fifth region of the second type and a sixth region of the first type. The fourth, the fifth and the sixth region are disposed along the second face of the silicon carbide region. The sixth region is provided between the fourth and the fifth region. | 2014-02-06 |
| 20140034965 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor device, includes: a first semiconductor region of a first conductivity type; a second semiconductor region provided on the first semiconductor region, an impurity concentration of the second semiconductor region being lower than an impurity concentration of the first semiconductor region; a third semiconductor region of a second conductivity type provided on the second semiconductor region; and a fourth semiconductor region provided on the third semiconductor region or in a portion of the third semiconductor region. A lattice strain of the fourth semiconductor region is greater than a lattice strain of the third semiconductor region. | 2014-02-06 |
| 20140034966 | TRANSISTOR AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a transistor includes: a structural body; an insulating film; a control electrode; a first electrode; and a second electrode. The structural body includes a first through a third semiconductor regions, and includes a compound semiconductor having a first and a second elements. The first electrode is electrically continuous with the third semiconductor region. The second electrode is electrically continuous with the first semiconductor region. The structural body has a first region provided above a lower end of the second semiconductor region and a second region other than the first region. The first region is a region formed by making a ratio of concentration of source gas of the second element to concentration of source gas of the first element larger than 1.0. Impurity concentration of the first conductivity type in the first region is higher than that in the second region. | 2014-02-06 |
| 20140034967 | DIODE - A diode is provided which includes at least one diode element which has a plurality of N-type regions and a plurality of P-type regions, the N-type regions and the P-type regions being alternately arranged in series to form PN junctions, and an insulated substrate which has electric insulation. The N-type regions and the P-type regions are formed on the insulated substrate. | 2014-02-06 |
| 20140034968 | BIPOLAR JUNCTION TRANSISTOR WITH SPACER LAYER - New designs for silicon carbide (SiC) bipolar junction transistors (BJTs) and new methods of manufacturing such SiC BJTs are described. The SiC BJT comprises a collector region, a base region and an emitter region disposed as a stack, the emitter region and part of the base region forming a mesa. The intrinsic part of the base region includes a first portion having a first doping concentration and a second portion having a second doping concentration lower than the first doping concentration. Further, the second portion is vertically disposed between the first portion and the emitter region in the stack. | 2014-02-06 |
| 20140034969 | SILICON CARBIDE TRENCH MOSFET HAVING REDUCED ON-RESISTANCE, INCREASED DIELECTRIC WITHSTAND VOLTAGE, AND REDUCED THRESHOLD VOLTAGE - A semiconductor device (A | 2014-02-06 |
| 20140034970 | SEMICONDUCTOR STRUCTURES AND METHODS OF MANUFACTURING THE SAME - A semiconductor structure has embedded stressor material for enhanced transistor performance. The method of forming the semiconductor structure includes etching an undercut in a substrate material under one or more gate structures while protecting an implant with a liner material. The method further includes removing the liner material on a side of the implant and depositing stressor material in the undercut under the one or more gate structures. | 2014-02-06 |
| 20140034971 | SEMICONDUCTOR APPARATUS AND METHOD FOR MAKING SEMICONDUCTOR APPARATUS - A semiconductor apparatus invention includes a substrate ( | 2014-02-06 |
| 20140034972 | HOUSING FOR HIGH-POWER LIGHT EMITTING DIODES - A housing for optoelectronic components, such as LEDs, and to a method for producing such a housing are provided. The housing has a base body with an upper surface that at least partially defines a mounting area for at least one optoelectronic functional element, such that the base body provides a heat sink for an optoelectronic functional element. The base body also has a lower surface and a lateral surface. The housing has a connecting body for the optoelectronic functional element, which is joined to the base body at least by a glass layer. The connecting body is arranged at a lateral side of the base body and at least partially extends around a periphery of the base body. | 2014-02-06 |
| 20140034973 | LIGHT-EMITTING DEVICE - A light-emitting device including: a base; light-emitting elements arranged on the base at intervals in an array along a predetermined direction of the base; and conductive-wiring parts formed on first and second sides of the array of the light-emitting elements on the base. The conductive-wiring parts are discretely formed along the predetermined direction of the base, each of the conductive-wiring parts relaying electricalconnection between the light-emitting elements, and the number of the conductive-wiring parts arranged per light-emitting element on each of the first and second sides of the array of the light-emitting elements is two or more. | 2014-02-06 |
| 20140034974 | LIGHT-EMITTING DEVICE - A light-emitting diode device is disclosed, which includes a substrate; a plurality of light-emitting diode units, each of the light-emitting diode units being an equilateral polygon with more than four sides, are disposed on the substrate; wherein each of the light-emitting diode units includes a first electrical connecting area disposed along a first side of the light-emitting diode unit, a second electrical connecting area disposed along a second side of the light-emitting diode unit, and a conductive connecting structure disposed on each of the electrical connecting areas; wherein each of the electrical connecting area electrically connects to one another light-emitting diode unit through the conductive connecting structure. | 2014-02-06 |
| 20140034975 | DISPLAY APPARATUS - A display apparatus includes an active device array substrate, an opposite substrate disposed opposite to the active device array substrate, and a display medium disposed between the active device array substrate and the opposite substrate. The opposite substrate includes a first base and a light-shielding structure disposed on the first base and located between the first base and the active device array substrate. The light-shielding structure has a first dielectric layer, a second dielectric layer, a third dielectric layer, a metal layer, a fourth dielectric layer, a fifth dielectric layer, and a sixth dielectric layer stacked sequentially in a direction from the first base to the active device array substrate. The first, second, and third dielectric layers have different thicknesses. The fourth, fifth, and sixth dielectric layers have different thicknesses. | 2014-02-06 |
| 20140034976 | LIGHT-EMITTING DIODE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode (LED) structure and a method for manufacturing the same. The LED structure includes an insulation substrate, a plurality of LED chips and a plurality of interconnection layers. Each LED chip includes an epitaxial layer and a dielectric layer stacked on a surface of the insulation substrate in sequence. Each LED chip is formed with a first conductivity type contact hole and a second conductivity type contact hole penetrating the dielectric layer, and a first isolation trench disposed in the epitaxial layer and between the second conductivity type contact hole of the LED chip and the first conductivity type contact hole of the neighboring LED chip. Each interconnection layer extends from the second conductivity type contact hole of each LED chip to the first conductivity type contact hole of the neighboring LED chip by passing over the first isolation trench to electrically connect the LED chips. | 2014-02-06 |
| 20140034977 | LIGHT-EMITTING DIODE ARRAY - The application provides a light-emitting diode array, including: a first light-emitting diode including a first area; a second area; a first isolation path between the first area and the second area, and the first isolation path including an electrode isolation layer; and an electrode contact layer covering the first area; a second light-emitting diode including a semiconductor stack layer; and a second electrical bonding pad on the semiconductor stack layer; and a second isolation path between the first light-emitting diode and the second light-emitting diode, wherein the second isolation path includes an electrical connecting structure electrically connected to the first light-emitting diode and the second light-emitting diode. | 2014-02-06 |
| 20140034978 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The second semiconductor layer is provided on a [0001]-direction side of the first semiconductor layer. The light emitting layer includes a first well layer, a second well layer and a first barrier layer. An In composition ratio of the barrier layer is lower than that of the first well layer and the second well layer. The barrier layer includes a first portion and a second portion. The second portion has a first region and a second region. The first region has a first In composition ratio higher than that of the first portion. The second region is provided between the first region and the first well layer. The second region has a second In composition ratio lower than the first In composition ratio. | 2014-02-06 |
| 20140034979 | LED LIGHTING ASSEMBLY INTEGRATED WITH DIELECTRIC LIQUID LENS - An LED lighting assembly integrated with dielectric liquid lens, including: a heat dissipation substrate; an LED chip, located on the heat dissipation substrate; a transparent material, covering the heat dissipation substrate and the LED chip and having a curved surface; a transparent liquid, located above the transparent material; a transparent layer, located above the transparent liquid; a first dielectric liquid, located above the transparent layer; a second dielectric liquid, located above the first dielectric liquid and having a curved surface, wherein the second dielectric liquid has a second dielectric constant smaller than a first dielectric constant of the first dielectric liquid; a transparent electrode layer, located above the second dielectric liquid for applying a control voltage to generate a dielectric force on the second dielectric liquid; and an enclosing body. | 2014-02-06 |
| 20140034980 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device comprises a first groove extending to a first semiconductor layer from a second semiconductor layer side through the second semiconductor layer and a light emitting layer; a first ohmic electrode formed in contact with the first semiconductor layer in the first groove; an insulating layer covering a surface of the second semiconductor layer and at least the surface of part of the light emitting layer exposed in the first groove; a metal layer covering the surface of the insulating layer and connected to the first ohmic electrode; a second groove extending from a first semiconductor layer side through the first semiconductor layer and the light emitting layer to the second semiconductor layer; a second ohmic electrode formed in contact with the second semiconductor layer in the second groove; and a support body bonded to the metal layer via a junction layer. | 2014-02-06 |
| 20140034981 | LIGHT EMITTING DIODE STRUCTURE - A light-emitting diode structure has: a substrate; a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with electrical polarity different from that of the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer, wherein the first electrode comprises a contact area and an extension area, and the contact area has a first surface corresponding to the first semiconductor layer and the extension area has a second surface corresponding to the first semiconductor layer, wherein a roughness of the first surface is different from that of the second surface, and the reflectivity of the first surface is smaller than that of the second surface. | 2014-02-06 |
| 20140034982 | LIGHT-EMITTING DEVICE - A light-emitting device includes a pixel having a transistor provided over a substrate, and a light-emitting element. The transistor includes a single-crystal semiconductor layer which forms a channel formation region, a silicon oxide layer is provided between the substrate and the single-crystal semiconductor layer, a source or a drain of the transistor is electrically connected to an electrode of the light-emitting element, and the transistor is operated in a saturation region when the light-emitting element emits light. Further, in the light-emitting device, a gray scale of the light-emitting element is displayed by changing a potential applied to the gate of the transistor. | 2014-02-06 |
| 20140034983 | Method for Manufacturing at Least One Optoelectronic Semiconductor Device - A method for manufacturing at least one optoelectronic semiconductor device includes providing a substrate and applying a number of optoelectronic semiconductor chips, which are arranged spaced apart from one another in a lateral direction, on an upper face of the substrate. At least one reflective coating is applied to the exposed areas of the substrate and the lateral surfaces of the optoelectronic semiconductor chips. Openings are introduced into the reflective coating, which completely penetrate the reflective coating. Electrically conductive material is arranged on the reflective coating and at least on some parts of the openings. Radiation penetration surfaces of the optoelectronic semiconductor chips are free of the reflective coating and the reflective coating does not laterally extend beyond the optoelectronic semiconductor chips. | 2014-02-06 |
| 20140034984 | SEMICONDUCTOR LIGHT EMITTER DEVICE - A semiconductor light emitter device for emitting light having a photon energy, comprises a mechanical carrier made substantially of a material that is an absorbant of the light with the photon energy, and having a carrier bottom side and a carrier top side opposite to the carrier bottom side, a layer structure epitaxially deposited on the carrier bottom side of the mechanical carrier and comprising an active-layer stack with at least two semiconductor layers of opposite conductivity types, which is configured to emit light upon application of a voltage to the active-layer stack, and at least one opening in the mechanical carrier, the opening reaching from the carrier bottom side to the carrier top side and being arranged and shaped to allow a passage of light, which is emitted from the active-layer stack, through the opening in the mechanical carrier. | 2014-02-06 |
| 20140034985 | LIGHT EMITTING DIODE HAVING INCREASED LIGHT EXTRACTION - An n-type layer, an active layer, and a p-type layer are grown on a growth substrate. Portions of the p-type layer and active layer are etched away to expose the n-type layer, and an n-electrode is formed over the exposed portions of the n-type layer. A first dielectric layer is formed over the n-electrodes. A transparent conductor layer is formed over the p-type layer and the first dielectric layer. A p-electrode is formed over the transparent conductor layer. A transparent bonding layer is deposited over the transparent conductor layer and the p-electrode. A transparent support substrate is bonded to the p-type layer via the bonding layer. The growth substrate is then removed to expose the n-type layer, and the layers are etched to expose the n and p electrodes for connection to a power source. A reflector layer is formed on the bottom surface of the substrate. | 2014-02-06 |
| 20140034986 | BROADBAND DIELECTRIC REFLECTORS FOR LED WITH VARYING THICKNESS - A broadband, omnidirectional, multi-layer, dielectric reflector for an LED in a white light emitting device provides both near 100% reflectivity across the visible spectrum of light, and electrical insulation between the substrate and the electrical circuitry used to power and control the LED. When a sealant material, having a higher index of refraction than air, is used to protect the LED and the accompanying electrical circuitry, an aluminum reflector layer or substrate is provided to make up for the loss of reflectivity at certain angles of incidence. The dielectric reflector includes two separate sections with two different thicknesses, a thinner section below the LED providing better heat conductivity, and a thicker section surrounding the LED providing better reflectivity. | 2014-02-06 |
| 20140034987 | COMPOSITE HIGH REFLECTIVITY LAYER - A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED. | 2014-02-06 |
| 20140034988 | MANUFACTURING METHOD OF LIGHT-EMITTING DEVICE AND LIGHT MIXING DEVICE - Disclosed is a light-emitting device comprising: a carrier; a light-emitting element disposed on the carrier; a first light guide layer covering the light-emitting element; a second light guide layer covering the first light guide layer; a low refractive index layer between the first light guide layer and the second light guide layer to reflect the light from the second light guide layer; and a wavelength conversion layer covering the second light guide layer; wherein the low refractive index layer has a refractive index smaller than one of the refractive indices of first light guide layer and the second light guide layer. | 2014-02-06 |
| 20140034989 | LIGHT EMITTING APPARATUS - A light emitting device including a contact layer, a blocking layer over the contact layer, a protection layer adjacent the blocking layer, a light emitter over the blocking layer, and an electrode layer coupled to the light emitter. The electrode layer overlaps the blocking layer and protection layer, and the blocking layer has an electrical conductivity that substantially blocks flow of current from the light emitter in a direction towards the contact layer. In addition, the protection layer may be conductive to allow current to flow to the light emitter or non-conductive to block current from flowing from the light emitter towards the contact layer. | 2014-02-06 |
| 20140034990 | III-V LIGHT EMITTING DEVICE WITH THIN N-TYPE REGION - A device includes a semiconductor structure comprising a III-phosphide light emitting layer disposed between an n-type region and a p-type region. A transparent, conductive oxide is disposed in direct contact with the n-type region. In some embodiments, a total thickness of semiconductor material between the light emitting layer and the transparent, conductive oxide is less than one micron. | 2014-02-06 |
| 20140034991 | TUNABLE COLOUR LED MODULE - A tunable colour LED module comprises at least two sub-modules, each comprising an LED, a wavelength converting element (WCE) and a reflector cup. The total light emitted by the module comprises light generated from each LED and WCE and the module is configured to emit a total light having a predefined colour chromaticity when activation properties of the LEDs are managed appropriately. The total light may have a broad white emission spectrum. The module combines the benefits of a low cost with uniform chromaticity properties in the far field, and offers long and controlled lifetime at the same time as flexibility and intelligence of tunable colour chromaticity, Colour Rendering Index (CRI) and intensity, either at manufacture or in an end user lighting application. A controlled LED module system comprises a control system for the managing activation properties of the LEDs in the sub-modules. Also described is a method of manufacture. | 2014-02-06 |
