| 05th week of 2010 patent applcation highlights part 16 |
| Patent application number | Title | Published |
|---|
| 20100025592 | METHOD AND APPARATUS FOR RADIATION DETECTION - An imaging system for imaging an object has an x-ray source for emitting x-rays. A detection system has a plurality of position sensitive detector planes, and the object is located between the x-ray source and the detection system. A portion of the x-rays pass through said object and pass into said plurality of detector planes and are detected within the plurality of detector planes. A multi-channel readout system is coupled to the plurality of position sensitive detector planes. A display system is coupled to the multi-channel readout system, and the display system displays an image of said object. A portion of the x-rays passing into the plurality of detector planes undergoes at least one Compton scatter within the plurality of detection planes and is detected. A total or partial energy corresponding to each portion of the emitted x-rays is recorded by a multichannel readout system. The direction for the said detected x-ray is determined and the direction and total or partial energy corresponding to each detected x-ray is processed by a multi-channel readout system to generate said image. | 2010-02-04 |
| 20100025593 | EVENT SHARING RESTORATION FOR PHOTON COUNTING DETECTORS - Photon counting detectors may suffer from pulse sharing effects and fluorescence photon generation, which may lead to a degradation of the measured signals. According to an exemplary embodiment of the present invention, a detector unit is provided which is adapted for performing a coincidence detection and correction by comparing detection events of neighbouring cells, thereby providing for a coincidence identification followed by an individual coincidence correction. In order to reduce the number of coincidence detection and corresponding units per detector unit, a specific detector cell geometry may be applied. | 2010-02-04 |
| 20100025594 | Neutron Moderator, Neutron Irradiation Method, and Hazardous Substance Detection Apparatus - A neutron moderator includes a neutron generator; a neutron moderating material arranged on one side of the neutron generator; a gamma ray shielding material covering an external surface of the neutron moderating material; and a thermal neutron absorbing material covering the external surface of the neutron moderating material except a side where the neutron generator is arranged. | 2010-02-04 |
| 20100025595 | Electro-optical device - An electro-optical device can include a plurality of nanocrystals positioned between a first electrode and a second electrode. | 2010-02-04 |
| 20100025596 | FASTENING APPARATUS - One embodiment of this fastening apparatus comprises a body with a passage through its length, a threaded member, a locking member, and a bowed ring. The threaded member is retained by the locking member in the passage. The bowed ring is disposed on the body and is configured to be flexible. This body may be fabricated of graphite in one instance. | 2010-02-04 |
| 20100025597 | ION IMPLANTING DEVICE AND METHOD - To reduce the occurrence of stripes in the oscillation direction of a semiconductor wafer which might occur when ion implantation scanning is performed by radiating ions onto the semiconductor wafer while oscillating the semiconductor wafer like a pendulum, the ion implantation of the present invention involves radiating ions while rotating a plurality of semiconductor wafers | 2010-02-04 |
| 20100025598 | FLOOD SOURCE WITH PIGMENTLESS ACTIVE AREA AND VISIBLE BORDER - Method and/or system for forming a radiation flood source. The radiation flood source includes a paper sheet, a pigmentless radioactive fill printed on the paper sheet, and a pigmented border printed on the paper sheet and around the pigmentless radioactive fill. In one embodiment the radiation flood source is formed by preparing a radioactive isotope carrier solution; loading the radioactive isotope carrier solution into a radioactive isotope carrier solution cartridge; loading a separate border cartridge into a plotter; selecting and configuring a shape of an active area; setting a border to be placed around the active area; printing the active area by utilizing the radioactive isotope carrier solution cartridge on a sheet substrate; and printing the border by utilizing the separate border cartridge on the sheet substrate. | 2010-02-04 |
| 20100025599 | Emitting and negatively-refractive focusing apparatus, methods, and systems - Apparatus, methods, and systems provide emitting and negatively-refractive focusing of electromagnetic energy. In some approaches the negatively-refractive focusing includes negatively-refractive focusing from an interior field region with an axial magnification substantially less than one. In some approaches the negatively-refractive focusing includes negatively-refractive focusing with a transformation medium, where the transformation medium may include an artificially-structured material such as a metamaterial. | 2010-02-04 |
| 20100025600 | Systems and methods for heating an EUV collector mirror - As disclosed herein, a device may comprise a substrate made of a material comprising silicon, the substrate having a first side and an opposed second side; an EUV reflective multi-layer coating overlaying at least a portion of the first side; an infrared absorbing coating overlaying at least a portion of the second side; and a system generating infrared radiation to heat the absorbing coating and the substrate. | 2010-02-04 |
| 20100025601 | POPPET VALVE WITH SLOPED PURGE HOLES AND METHOD FOR REDUCING A PRESSURE FORCE THEREIN - A poppet valve is disclosed that includes a valve body, a poppet guide disposed inside the valve body so as to form a flow passage from an inlet to an outlet of the valve, a poppet shutter disposed inside the poppet guide, and a biasing member to bias the poppet shutter away from the poppet guide toward an inside surface of the flow inlet so as to block the flow passage. The poppet valve further includes at least one discharge hole placing an inner chamber of the poppet guide in flow communication with a region of low static pressure of the flow passage. A method for reducing a closing pressure force acting on a poppet shutter of a poppet valve is also disclosed. | 2010-02-04 |
| 20100025602 | INJECTION APPARATUS AND A VALVE DEVICE PROVIDED IN A PASSAGE - An ink jet type recording apparatus comprises a connection member which has a passage for leading ink to a recording head from an ink cartridge. In the passage, a valve member having a magnetic body is provided. A rotation member has a permanent magnet and is rotatable between a first position and a second position. When the rotation member is located in the first position, an attraction that can move the valve member in an opening direction of the passage acts between the magnet and magnetic body, and hence, the valve member opens the passage. When the rotation member is located in the second position, the attraction that can move the valve member does not act between the magnet and magnetic body, and hence, the valve member closes the passage. | 2010-02-04 |
| 20100025603 | APPARATUS TO CONTROL A FLUID FLOW CHARACTERISTIC OF FLUID REGULATOR BYPASS VALVES - Apparatuses to control a fluid flow characteristic of fluid regulator bypass valves are described. An example apparatus includes an insert having a body sized to be inserted in a passage of a bypass valve. The body includes an opening to fluidly couple a bore of the body to an outer surface of the body. The opening being shaped to produce a predetermined flow characteristic in response to at least a portion of a restrictor of the bypass valve moving relative to the opening to vary a fluid flow through the opening and the bypass valve. | 2010-02-04 |
| 20100025604 | Slide Valve Control Device and a Drive Device for Use With It - A valve control device, in particular for control pods or similar equipment used in the mining and/or production of mineral oil/natural gas, comprises a valve housing in which hole or boring sections are arranged, and a valve slide movable relative to the hole sections, with at least a first and a second flow hole for the alternative connection of a feed line from a fluid pressure hose with at least one actuator or of the actuator to return line for leading the fluid away, wherein in each case one of the connections is made and the other is interrupted. To improve such a valve control device in that with only slight and economical constructional modifications with retention of all the advantages of known valve control devices, a substantial reduction in the leakage flow is facilitated or even almost completely suppressed, at least first and second valve elements which in the closed position can be pressed onto a valve seat formed especially at a hole section are laterally assigned to the flow holes, wherein in the connection position of the first flow hole the second valve element is in the closed position and in the connecting position of the second flow hole the first valve element is in the closed position each pressed onto the respective assigned valve seat in its closed position. | 2010-02-04 |
| 20100025605 | Fuel Valve for Supplying Auxiliary Heating Unit in A Motor Vehicle with Fuel - A fuel valve ( | 2010-02-04 |
| 20100025606 | ELECTROMAGNETIC ACTUATION UNIT - The invention relates to an electromagnetic actuation unit ( | 2010-02-04 |
| 20100025607 | Quick joint for connecting gas cylinder and pressure reducing valve for gas stove - The present invention discloses a quick joint for connecting gas cylinder and pressure reducing valve for gas stove, and the quick joint includes a connecting ring having a through hole, and arc brackets extended from the periphery of the connecting ring and encircled into a ring shape, and each arc bracket includes a positioning groove for installing a spring clamp. When the quick joint is operated, a connecting ring is installed between the pressure reducing valve and the middle of a joint pipe of the pressure reducing valve, and the pressure reducing valve is sheathed onto the gas cylinder, and a spring clamp is used for loosening and binding the connecting ring for installing or removing a screw type pressure reducing valve and a push-button type gas cylinder, and thus providing a safe and quick use. | 2010-02-04 |
| 20100025608 | THROTTLE VALVE - Disclosed is a throttle valve ( | 2010-02-04 |
| 20100025609 | DEVICE MOUNT FOR SINK OR BASIN - A mount for a device, such as a faucet controller or valve actuator assembly for mounting the device to a sink or basin having carrier arm mounting holes. A valve actuator assembly for operating a valve for a sink or basin and operable with a push pad, the valve actuator assembly having a housing mountable to the sink or basin, the housing supporting a shaft and a valve, the shaft rotatable between a normal at rest position and a valve operating position, a rocker operably connected with a shaft, for rotation with the shaft, the rocker having an extent for operably urging a member supporting the valve when the shaft in is the valve operating position, and a push pad mechanism operably connected with the shaft and the push pad to selectively activate the valve. | 2010-02-04 |
| 20100025610 | LOW PROFILE VALVE ACTUATOR HAVING HIGH TORQUE OUTPUT - A valve actuator is provided for use in conjunction with a drive motor and a valve. In one embodiment, the valve actuator includes a housing assembly, a first power screw rotatably mounted in the housing assembly and configured to be rotated by the drive motor, a first rack translatably mounted in the housing assembly, and a pinion rotatably mounted in the housing assembly and mechanically linked to the valve. The first rack is threadably coupled to the first power screw and is configured to move linearly as the first power screw rotates. The pinion engages the first rack and is configured to rotate as the first rack moves linearly to move the valve to a desired position. | 2010-02-04 |
| 20100025611 | Fluid Conveyance and/or Distribution Device with Ring Nut Coupling - A device for conveying and/or distributing fluids comprises a housing with connection portions, one or more threaded ring nuts that can be screwed to the connection portions in order to join them, a control handle and a tightening seat formed in the housing and adapted to support the control handle in a tightening position, rotatable around a tightening axis. The control handle comprises a drive portion which, in the tightening position, engages with a coupling portion of the ring nut, in a manner such that a rotation of the control handle around the tightening axis leads to a screwing or an unscrewing of the ring nut. | 2010-02-04 |
| 20100025612 | CONTROL VALVE FOR A WATER TAP - A control valve for a water tap comprises a connecting member, a drain member, and a stop assembly, wherein the drain member is screwed with the connecting member, and between the drain member and the connecting member is defined a passage, the drain member includes a plurality of outlets formed on the bottom thereof for communicating with the passage and for flowing water outwardly, the stop assembly is defined between the connecting member and the drain member, such that as the drain member is rotated to the first position, the water flows out of the outlets through the passage, and as the drain member is rotated to the second position, the stop assembly closes the passage to stop water flow, controlling water supply easily from an outlet extension of the water tap. | 2010-02-04 |
| 20100025613 | MICROFLUIDIC VALVE HAVING FREE-FLOATING MEMBER AND METHOD OF FABRICATION - Micro check valves having a free-floating member for controlling flow of fluid in microfluidic and biomedical applications and methods of fabrication. A micro check valve includes a valve seat, a valve cap that contacts the valve seat and an untethered floating member that can move between the valve seat and the valve cap. Certain micro check valves have zero cracking pressure and no reverse leakage. Certain other valves may be configured to permit flow of fluid within a pressure range. The floating member can be solid or define an orifice, and the valve seat can have one or two levels. Valves can be configured to allow fluid to flow when the floating member is pushed by fluid against the valve cap or against the valve seat. The valve seat may be silicon or another material that is compatible with micromachining processes, and the valve cap and the floating member may be a polymer such as Parylene. | 2010-02-04 |
| 20100025614 | Piston valve for diaphragm pump - The present invention relates to an “improved piston valve for diaphragm pump” features that each of water discharge base and water discharge base has a top camber concave surface with orientating hole center and orientating hole center as lowest point respectively; After anchoring anti-backflow plastic gasket into water discharge base, a gap is formed between bottom surface of anti-backflow plastic gasket and top camber concave surface of water discharge base; Likewise, after anchoring each piston slice into each corresponding water inlet port, a gap is formed between bottom surface of piston slice and top camber concave surface of water inlet port; By functions of foregoing gaps, the overall compressing efficiency is substantially enhanced because both sucking forces of anti-backflow plastic gasket and piston slice are further increased by reciprocal actions of piston pusher. | 2010-02-04 |
| 20100025615 | INSULATING FLUID AND METHODS FOR PREPARING AND INSULATING CONCENTRIC PIPING - The present inventions include an insulating fluid comprising a non-particulate viscosifying polymer, a water or brine, a cross-linking agent, and insulating particulates. The insulating fluid may be produced by performing the following steps in any order: adding a non-particulate viscosifying polymer to a brine, adding a cross-linking agent, adding insulating particulates, and optionally adding a solvent. The insulating fluid may be injected into an annulus surrounding a pipe such as production tubing, casing, surface pipelines, subsea pipelines, or risers. | 2010-02-04 |
| 20100025616 | MECHANICAL STRENGTH & THERMOELECTRIC PERFORMANCE IN METAL CHALCOGENIDE MQ (M=Ge,Sn,Pb and Q=S, Se, Te) BASED COMPOSITIONS - Thermoelectric eutectic and off-eutectic compositions comprising a minor phase in a thermoelectric matrix phase are provided. These compositions include eutectic and near eutectic compositions where the matrix phase is a chalcogenide (S, Se, Te) of Ge, Sn, or Pb or an appropriate alloy of these compounds and at least one of Ge, Ge | 2010-02-04 |
| 20100025617 | METAL OXIDE - Provided is a piezoelectric material excellent in piezoelectricity. The piezoelectric material includes a perovskite-type complex oxide represented by the following General Formula (1). | 2010-02-04 |
| 20100025618 | PIEZOELECTRIC MATERIAL - Provided is a piezoelectric material which includes a compound free of lead and alkali metal and has a good piezoelectric property. The piezoelectric material where tungsten bronze structure oxides being free of lead and alkali metal and represented by A | 2010-02-04 |
| 20100025619 | Method for heating and cooling using fluoroether compounds, compositions suitable therefore and their use - Compounds of general formula (I) C | 2010-02-04 |
| 20100025620 | PROCESSES FOR PRODUCING AND COMPOSITIONS COMPRISING 2,3,3,3-TETRAFLUOROPROPENE AND/OR 1,2,3,3- TETRAFLUOROPROPENE - A process is disclosed for making CF | 2010-02-04 |
| 20100025621 | LUBRICANT FOR COMPRESSION REFRIGERATING MACHINE AND REFRIGERATING APPARATUS USING THE SAME - The present invention provides a lubricating oil for a compression type refrigerator including a polyvinyl ether-based compound containing an alkylene glycol or polyoxyalkylene glycol unit and a vinyl ether unit in a molecule and having a molecular weight in a range of 300 to 3,000, and an organic carboxylic acid alkali metal salt. The lubricating oil for a compression type refrigerator of the present invention has high miscibility and high viscosity index, and excellent in wear resistance and storage stability under carbon dioxide atmosphere. | 2010-02-04 |
| 20100025622 | Environmentally-friendly compositions and methods for treating multiple surfaces - The present invention provides compositions for road surface application, aircraft wings and surfaces, helicopter rotor blades or any surface where ice formation is not desired; wherein the composition serves to reduce the freezing temperature of surfaces, repels water, prevents the formation of ice, aids in the removal of ice and reduces contractile deformations and corrosion of surfaces. The compositions may also behave like a protective coating to applied surfaces. | 2010-02-04 |
| 20100025623 | ADDITIVE FOR POLISHING COMPOSITION - One embodiment of the present invention discloses an additive for polishing composition, which can ensure stable polishing properties. The additive for polishing composition contains one or more amine compounds and an alcohol. The one or more amine compounds contain a quaternary ammonium salt. In one embodiment, when the one or more amine compounds are contained in high concentration, the occurrence of precipitation of the amine compound can be prevented by including the alcohol. | 2010-02-04 |
| 20100025624 | ALKALI ETCHING LIQUID FOR SILICON WAFER AND ETCHING METHOD USING SAME - An alkali etching liquid for a silicon wafer that includes an aqueous solution of potassium hydroxide, and from 0.1 g/L to 0.5 g/L of diethylene triamine pentaacetic acid. Furthermore, the Fe concentration of the aqueous solution of potassium hydroxide is no more than 50 ppb. An etching method that including a step of etching a silicon wafer with a resistivity of no more than 1 Ω·cm using the etching liquid. | 2010-02-04 |
| 20100025625 | PITCH EMULSIONS - An emulsion of pitch in water characterized by having a lower level of tack on drying by virtue of the incorporation of a finely divided filler, where the emulsion is useful for reducing the development of fugitive dust in a dust-forming material. | 2010-02-04 |
| 20100025626 | TWO-LAYER COMPACTED SOLID PRODUCT FOR WATER POTABILIZATION AND PREPARATION METHOD - The present invention relates to a compacted solid product for water purification comprising:—at least a first layer comprising at least a coagulant/flocculant system comprising at least one polyvalent inorganic salt, at least one water-soluble cationic polymer and at least one high-molecular-weight anionic polymer,—at least a second layer comprising at least one disinfectant that releases active chlorine on contact with water, characterized in that said coagulant/flocculant system moreover comprises a sodium alginate. The invention also relates to the method for preparing such a product. | 2010-02-04 |
| 20100025627 | REACTION METHOD, METAL OXIDE NANOPARTICLE OR CARBON CARRYING THE NANOPARTICLE, OBTAINED BY THE METHOD, ELECTRODE CONTAINING THE CARBON, AND ELECTROCHEMICAL DEVICE WITH THE ELECTRODE - The present invention aims at: providing an accelerated reaction in a liquid-phase reaction; forming, by way of the reaction, a metal oxide nanoparticle and carbon that carries the metal oxide nanoparticle in a highly dispersed state; and providing an electrode containing the carbon and an electrochemical device using the electrode. In order to solve the above-mentioned problem, shear stress and centrifugal force are applied to the reactant in the rotating reactor so that an accelerated chemical reaction is attained in the course of the reaction. Further, the carbon carrying a metal oxide nanoparticle in a highly dispersed state comprises: a metal oxide nanoparticle produced by the accelerated chemical reaction, wherein shear stress and centrifugal force are applied to a reactant in a rotating reactor in the course of the reaction; and carbon dispersed in the rotating reactor by applying shear stress and centrifugal force. An electrochemical device produced by using the carbon carrying the metal oxide nanoparticle as an electrode has high output and high capacity characteristics. | 2010-02-04 |
| 20100025628 | Oxidation Processes Using Functional Surface Catalyst Composition - Oxidation processes using a catalyst composition which, preferably comprises a glass substrate, with one or more functional surface active constituents integrated on and/or in the substrate surface. A substantially nonporous substrate has (i) a total surface area between about 0.01 m | 2010-02-04 |
| 20100025629 | HUMIDITY CONTROL DEVICE - A device for controlling relative humidity in an environment with a solidified humectant composition. The solidified humectant composition is made from a humectant salt, water, and a carrier. The solidified humectant may be formed into a tablet with the aid of a binder, or it may be contained within a thermoformed felt material, a sachet, or a water permeable canister. In a preferred embodiment, the sachet is made of a micro-perforated polyester/paper/polyethylene material. Preferred humectant salts include CaCl | 2010-02-04 |
| 20100025630 | COMPOSITIONS INCLUDING POLYMERS ALIGNED VIA INTERCHAIN INTERACTIONS - The present invention provides compositions, devices and methods related to the alignment of materials including polymers. In some cases, the present invention comprises the assembly of molecules (e.g., polymers) via intermolecular interactions to produce extended networks, which may have enhanced properties relative to the individual molecules. Such networks may be advantageous for use in electronics, photovoltaics, sensor applications, and the like. In some embodiments, the present invention may enhance the performance of certain optical devices, such as liquid crystal displays (e.g., color liquid crystal displays) by providing enhanced contrast ratio, faster response times, and/or lower operating voltage. | 2010-02-04 |
| 20100025631 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY HAVING SAME - A liquid crystal composition and a liquid crystal display including the liquid crystal composition that includes a first class containing a fluorine-containing liquid crystal compound represented by Formula I (n=1, 2, or 3), and a second class containing at least one neutral liquid crystal compound represented by Formulae III, IV, and V. In Formula I, W | 2010-02-04 |
| 20100025632 | FLUORESCENT SUBSTANCE AND LIGHT-EMITTING DEVICE EMPLOYING THE SAME - The present invention provides a fluorescent substance excellent both in quantum efficiency and in temperature characteristics, and also provides a light-emitting device utilizing the fluorescent substance. This fluorescent substance contains an inorganic compound comprising a metal element M, a trivalent element M | 2010-02-04 |
| 20100025633 | Novel Whitening Agents For Cellulosic Substrates - This invention relates to novel whitening agents for cellulosic substrates. The whitening agents are comprised of at least two components: at least one chromophore component and at least one polymeric component. Suitable chromophore components generally fluoresce blue, red, violet, or purple color when exposed to ultraviolet light, or they may absorb light to reflect these same shades. The whitening agents are further characterized by having a dispersion component value of the Hansen Solubility Parameter of less than or equal to about 17 MPa | 2010-02-04 |
| 20100025634 | METHOD OF TREATING A HYDROCARBON GAS STREAM HAVING A HIGH CARBON DIOXIDE CONCENTRATION BY USING A LEAN SOLVENT CONTAINING AQUEOUS AMMONIA - A process for the treatment of a high-pressure hydrocarbon gas stream to make a carbon dioxide-rich product stream and a treated hydrocarbon gas product stream by contacting within a contactor the high-pressure hydrocarbon gas stream with a solvent containing aqueous ammonia and, optionally, a reaction product of a liquid ammonia-carbon dioxide-water system. A fat solvent containing precipitated solids is withdrawn from the contactor and is regenerated whereby carbon dioxide is released and the fat solvent and a lean solvent is provided for reuse as the solvent. | 2010-02-04 |
| 20100025635 | METHOD OF IMPROVING FLOWABILITY OF ADIPIC ACID - A method of improving flowability of adipic acid includes adding to the adipic acid at a relatively low temperature a flowability improving agent, such as an acyclic saturated monobasic acid containing 10 to 22 carbon atoms or an acyclic saturated dibasic acid containing 10 to 14 carbon atoms. | 2010-02-04 |
| 20100025636 | LIQUID PHOSPHITE COMPOSITIONS HAVING DIFFERENT ALKYL GROUPS - A composition comprising at least two different alkylaryl phosphites, wherein some alkyl groups have a different number of carbon atoms than other alkyl groups and wherein the composition is a liquid at ambient conditions. | 2010-02-04 |
| 20100025637 | Synthesis of Uniform Nanoparticle Shapes with High Selectivity - Embodiments of the invention provide a method of making non-spherical nanoparticles that includes (a) combining a source of a Group 12, 13, 14, or 15 metal or metalloid; a source of a Group 15 or 16 element; and a source of a quaternary ammonium compound or phosphonium compound; and (b) isolating non-spherical nanoparticles from the resulting reaction mixture. Other embodiments of the invention provide non-spherical nanoparticle compositions, that are the reaction product of a source of a Group 12, 13, 14, or 15 metal or metalloid; a source of a Group 15 or 16 element; and a source of a quaternary ammonium compound or phosphonium compound; wherein nanoparticle tetrapods comprise 75-100 number percent of the nanoparticle products. | 2010-02-04 |
| 20100025638 | COMPOSITION FOR FORMING TRANSPARENT ELECTROCONDUCTIVE FILM, TRANSPARENT ELECTROCONDUCTIVE FILM, AND DISPLAY - A composition includes a binder component and a conductive powder and a high-refractive-index powder both dispersed in the binder component, wherein the conductive powder includes 0.1 to 30 mass % of a tin hydroxide powder and 70 to 99.9 mass % of other conductive powder. The composition enables to form a transparent conductive film having excellent scratch resistance, excellent antistatic properties, an extremely high visible light transmittance and a controllable refractive index. Also described is the transparent conductive film. Further described is a display having the transparent conductive film on the display surface. | 2010-02-04 |
| 20100025639 | Silver particle composite powder and process production thereof - A silver particle composite powder produced by mixing a silver particle powder (A) which bears on the surface of each silver particle, an organic protective layer comprising an amine compound having at least one unsaturated bond in one molecule and having a molecular weight of from 100 to 1000, and has a mean particle diameter D | 2010-02-04 |
| 20100025640 | Loading quantum dots into thermo-responsive microgels by reversible transfer from organic solvents to water - Method for the preparation of inorganic-NP-composite microgels is based on the reversible transfer of microgels between water and an organic solvent such as tetrahydrofuran (THF). The method is used to produce semiconductor nanocrystals, often referred to as quantum dots (QDs) which are well known for their unique optical, electrical, magnetic and catalytic properties, as the inorganic NPs, recognizing that the best quality QDs are synthesized by a high temperature process in organic media, and have their surface covered with hydrophobic ligands (such as trioctylphosphine oxide, TOPO) that render the NPs insoluble in an aqueous solution. | 2010-02-04 |
| 20100025641 | INFRARED REGION SELECTIVE REFLECTION COAT AND INFRARED REGION SELECTIVE REFLECTION FILM - An infrared region selective reflection coat, having a layer exhibiting a structural color of which a central wavelength of a selective reflection band is in the range of 700 nm to 2,000 nm, | 2010-02-04 |
| 20100025642 | ULTRAVIOLET ABSORBENT COMPOSITION - An ultraviolet absorbent composition, containing:
| 2010-02-04 |
| 20100025643 | Flame-retardant mixture for thermoplastic polymers, and flame-retardant polymers - The invention relates to flame retardant mixtures for thermoplastic polymers, comprising a phosphinic salt of the formula (I) where M=Al (component A) and a fusible phosphinic salt of the formula (I) where M=Zn (component B), | 2010-02-04 |
| 20100025644 | WIRE BUNDLE PULL TOOL - A pull tool for handling an elongate article comprises a panel having opposing panel sides and opposing panel ends and a fastening mechanism extending along at least a portion of the panel sides. The fastening mechanism is configured to join the panel sides to form the panel in a sleeve configuration for encasing the elongate article therewithin. The panel of the pull tool has inner and outer surfaces with the outer surface having a substantially low coefficient of friction. | 2010-02-04 |
| 20100025645 | Ratchet Device with Self-Storing Strap - A ratchet device is provided that includes a base frame with the drive mechanisms located on the outside of the base frame so that a removable strap may be stored on a rotatable shaft about an axis relative to the base frame. The aforementioned outer drive mechanisms include a rotatable shaft knob, a latching bar, a drive bar, and a release cam. | 2010-02-04 |
| 20100025646 | CENTRIFUGALLY ACTUATED GOVERNOR - An assembly ( | 2010-02-04 |
| 20100025647 | RESCUE DEVICE WITH SPREADING MECHANISM - The invention describes a rescue apparatus ( | 2010-02-04 |
| 20100025648 | Pre-manufactured fence system - A pre-manufactured fence system is constructed of horizontal rails, posts that form a fence “field surface or area” and pickets or panels that complete the field. The posts and rails are hollow extruded members of polymer or metal material that are interconnected by bracket members that fit within bracket compartments of the rails. Bracket bar members are connected with the bracket members and are received within key-ways of the posts to properly position the rails with respect to the posts. The extruded components perform fence component positioning and establish pre-determined dimensioning and locations of the accompanying parts and pieces of the complete fence system and provide for component attachment that is not visible when the fence installation is completed. | 2010-02-04 |
| 20100025649 | REPLACEABLE PANEL FENCING SYSTEMS AND METHODS - Replaceable fence systems, methods, etc., include at least first and second vertical posts, a bottom rail coupled to the first and second posts and typically having a channel on an upper surface of the bottom rail, and a removable top rail positioned above the bottom rail and coupled to the first and second posts and having a channel on a lower surface of the top rail. The posts and rails are configured to replaceably accept, retain and disgorge replaceable fence panels, typically using a plurality of connection joints that permit the panels to be held at differing, adjustable heights and angles from one post to the next. Each of the channels can include a flexible centering insert configured to accept a variety of thicknesses of replaceable panels. | 2010-02-04 |
| 20100025650 | Adjustable Fencing System - A fencing system includes two spaced-apart post assemblies each including a post member having a bottom receiving space, a core element inserted into the bottom receiving space, and an adjustable press plate disposed transversely on and pressing the core element against a mounting surface. The core element has a through hole extending in top and bottom ends thereof. A fixing bolt has a top end portion extending into the through hole and the press plate. A locking element is connected to the top end portion, and is movable toward or away from the press plate so as to press the press plate against the core element or to release the press plate. At least one of the press plate and the core element is movable transversely of the fixing bolt so that a distance between the post members of the post assemblies can be adjusted. | 2010-02-04 |
| 20100025651 | FENCING SYSTEM AND POST INSERT FOR USE THEREWITH - A fencing system typically includes hollow posts with rail structures extending therebetween. Post mount assemblies are configured to mount on a foundation and are slidably received within the hollow posts to provide suitable support for the posts. In one embodiment, each post mount assembly includes a wedge which is wedged in a wedged position against the post mount assembly adjacent its upper end to apply an outward force thereon and/or move a portion of the post mount assembly outwardly within the hollow post. The wedged position typically forces the post mount assembly adjacent its upper end to frictionally engage an inner surface of the post in order to brace and secure the post adjacent its upper end. The hollow post may include strengthening ribs to provide additional structural integrity. | 2010-02-04 |
| 20100025652 | Multiple Quantum-Well Structure, Radiation-Emitting Semiconductor Base and Radiation-Emitting Component - A multiple quantum well structure ( | 2010-02-04 |
| 20100025653 | TUNABLE WAVELENGTH LIGHT EMITTING DIODE - A light emitting diode and a method of fabricating a light emitting diode, the diode has a first set of multiple quantum wells (MQWs), each of the MQWs of the first set comprising a wetting layer providing nucleation sites for quantum dots (QDs) or QD-like structures in a well layer of said each MQW; and a second set of MQWs, each of the MQWs of the second set formed so as to exhibit a photoluminescence (PL) peak wavelength shifted compared to the MQWs of the first set. | 2010-02-04 |
| 20100025654 | LIGHT-EMITTING DIODE IN SEMICONDUCTOR MATERIAL AND ITS FABRICATION METHOD - The subject of the invention is a light-emitting diode comprising a structure ( | 2010-02-04 |
| 20100025655 | PHOTON TUNNELING LIGHT EMITTING DIODES AND METHODS - Embodiments described herein include LEDs that promote photon tunneling. One embodiment of an LED device can have a quantum well layer adapted to generate light having a wavelength, a p-doped alloy layer on a first side of the quantum well layer and an n-doped alloy layer on the other side of the quantum well layer. The device can also include an electrode electrically connected to the p-doped alloy layer and an electrode electrically connected to the n-doped alloy layer. According to one embodiment the thickness of the n-doped alloy layer is less than the wavelength of light generated by the quantum well layer to allow light generated by the quantum well layer to tunnel to the medium (e.g., air). In another embodiment, the entire layer structure can have a thickness that is less than the wavelength. | 2010-02-04 |
| 20100025656 | WHITE LIGHT DEVICES USING NON-POLAR OR SEMIPOLAR GALLIUM CONTAINING MATERIALS AND PHOSPHORS - A packaged light emitting device. The device includes a substrate member comprising a surface region and one or more light emitting diode devices overlying the surface region. In a specific embodiment, at least one of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The one or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission of one or more first wavelengths. At least at least one of the light emitting diode devices comprise a quantum well region, which is characterized by an electron wave function and a hole wave function. In a specific embodiment, the electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. In a specific embodiment, the device has a thickness of one or more entities formed overlying the one or more light emitting diode devices. The one or more entities are excited by the substantially polarized emission and emitting electromagnetic radiation of one or more second wavelengths. | 2010-02-04 |
| 20100025657 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices. | 2010-02-04 |
| 20100025658 | Lithographic process using a nanowire mask, and nanoscale devices fabricated using the process - The disclosure pertains to a method for making a nanoscale filed effect transistor structure on a semiconductor substrate. The method comprises disposing a mask on a semiconductor upper layer of a multi-layer substrate, and removing areas of the upper layer not covered by the mask in a nanowire lithography process. The mask includes two conductive terminals separated by a distance, and a nanowire in contact with the conductive terminals across the distance. The nanowire lithography may be carried out using a deep-reactive-ion-etching, which results in an integration of the nanowire mask and the underlying semiconductor layer to form a nanoscale semiconductor channel for the field effect transistor. | 2010-02-04 |
| 20100025659 | NON-VOLATILE ELECTROMECHANICAL FIELD EFFECT DEVICES AND CIRCUITS USING SAME AND METHODS OF FORMING SAME - Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control terminal, said nanotube switch being positioned to control electrical conduction through said conductive channel. Under another aspect, a field effect device includes a gate having a corresponding gate terminal; a source having a corresponding source terminal; a drain having a corresponding drain terminal; a control terminal; and a nanotube switching element positioned between one of the gate, source, and drain and its corresponding terminal and switchable, in response to electrical stimuli at the control terminal and at least one of the gate, source, and drain terminals, between a first non-volatile state that enables current flow between the source and the drain and a second non-volatile state that disables current flow between the source and the drain. | 2010-02-04 |
| 20100025660 | SEMICONDUCTOR DEVICES, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME - Disclosed herein is a device comprising a source region, a drain region and a gate layer; the source region, the drain region and the gate layer being disposed on a semiconductor host; the gate layer being disposed between source and drain regions; the gate layer comprising a first gate-insulator layer; a gate layer comprising carbon nanotubes and/or graphene. Disclosed herein too is a method comprising disposing a source region, a drain region and a gate layer on a semiconductor host; the gate layer being disposed between the source region and the drain region; the gate layer comprising carbon nanotubes and/or graphene. | 2010-02-04 |
| 20100025661 | Luminescent material and organic electroluminescent device using the same - The subject of the present invention is to provide an emission material which contributes to high emission efficiency, low drive voltage, excellent heat resistance and long life in an organic electroluminescent device, particularly an emission material which is excellent in emission of blue color. Further, the subject is to provide an organic electroluminescent device using the above emission material. The above subjects can be achieved by an emission material represented by Formula (1) and an organic electroluminescent device comprising the same. | 2010-02-04 |
| 20100025662 | HIGH DENSITY COUPLING OF QUANTUM DOTS TO CARBON NANOTUBE SURFACE FOR EFFICIENT PHOTODETECTION - The present invention relates to a method of preparing a carbon nanotube-quantum dot conjugate having a high density of quantum dots (QDs) on its surface. This method involves providing a plurality of semiconductor quantum dots and providing a thiol-functionalized carbon nanotube having a plurality of terminal thiol groups on its surface. The plurality of semiconductor quantum dots are attached to the surface of the carbon nanotube under conditions effective to yield a carbon nanotube-quantum dot conjugate having a high density of quantum dots on its surface. The present invention also relates to a carbon nanotube-quantum dot conjugate having a high density of quantum dots on its surface. The present invention further relates to a photodetector device. This device includes a substrate and a nanocomposite layer. The nanocomposite layer includes a plurality of the carbon nanotube-quantum dot conjugates previously described. | 2010-02-04 |
| 20100025663 | Efficient solar cells using all-organic nanocrystalline networks - An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer; depositing a layer of a second organic semiconductor material on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; and depositing the first organic semiconductor material on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed. The depositing of the first and second organic semiconductor materials are alternated a number of times until a final layer of the second organic material is added to form a continuous layer. A second electrode is deposited over this final layer. One of the first electrode and the second electrode is transparent, and the first organic semiconductor material is one or more donor-type materials or one or more acceptor-type materials relative to second organic semiconductor material, which is one or more materials of the other material type. | 2010-02-04 |
| 20100025664 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light-emitting diode (“OLED”) display includes a first thin film transistor disposed on a substrate; a first insulating layer disposed on the first thin film transistor; a reflective electrode disposed on the first insulating layer; a common voltage line disposed on the first insulating layer and separated from the reflective electrode; a second insulating layer disposed on the reflective electrode and the common voltage line; a pixel electrode disposed on the second insulating layer and electrically connected to the first thin film transistor; an organic light-emitting member disposed on the pixel electrode; and a common electrode disposed on the organic light-emitting member, wherein the common voltage line is electrically connected to the common electrode. | 2010-02-04 |
| 20100025665 | ORGANIC PHOTOSENSITIVE DEVICES USING SUBPHTHALOCYANINE COMPOUNDS - An organic photosensitive optoelectronic device, having a donor-acceptor heterojunction of a donor-like material and an acceptor-like material and methods of making such devices is provided. At least one of the donor-like material and the acceptor-like material includes a subphthalocyanine, a subporphyrin, and/or a subporphyrazine compound; and/or the device optionally has at least one of a blocking layer or a charge transport layer, where the blocking layer and/or the charge transport layer includes a subphthalocyanine, a subporphyrin, and/or a subporphyrazine compound. | 2010-02-04 |
| 20100025666 | ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM TRANSISTOR MANUFACTURING PROCESS - Disclosed is a stable organic thin film transistor having good switching property and a process for manufacturing an organic thin film transistor by a simple method. The organic thin film transistor comprises a substrate and provided thereon, at least a source electrode, a drain electrode, an organic semiconductor connecting the source electrode and the drain electrode, a gate electrode, and an insulating layer composed of a plurality of layers, the insulating layer being provided between the gate electrode and the organic semiconductor, wherein the organic thin film transistor comprises a mercapto group-containing compound represented by the following formula (I), | 2010-02-04 |
| 20100025667 | Organic field effect transistor and method of manufacturing the same - The present invention discloses an organic field effect transistor and a manufacturing method thereof. The organic field effect transistor comprises a top-contact type or a bottom-contact type, and the manufacturing method thereof comprises the following steps: a substrate is provided, a metal gate is formed on the substrate, an inorganic insulating layer is formed on the substrate and the metal gate, a surface of the insulating layer is polished, an organic filler is filled in pores on the insulating layer as an insulating treatment, a modified layer is formed on the inorganic insulating layer, and finally an organic semiconductor layer, a source and a drain are formed. By combining the advantages of simply liquefied process of the organic material and the high stability of inorganic material, and operation conditions of control process, the present invention can achieve effectively that the device is high carrier mobility and high on/off ratio. | 2010-02-04 |
| 20100025668 | ORGANIC TRANSISTOR AND METHOD FOR FABRICATING A DIELECTRIC LAYER OF SUCH A TRANSISTOR - The present invention relates to an organic transistor comprising a conductive element which forms a drain; a conductive element which forms a source located away from the drain; a conductive element which forms a gate having a surface which faces the drain and a surface which faces the source; a semiconducting layer which is in contact with the drain and the source; and a dielectric layer located between, firstly, the gate and, secondly, the source and the drain with the dielectric layer having a dielectric permittivity which varies depending on its thickness, | 2010-02-04 |
| 20100025669 | AMINE-BASED COMPOUND, ORGANIC LIGHT EMITTING DEVICE COMPRISING THE AMINE-BASED COMPOUND, AND FLAT PANEL DISPLAY DEVICE INCLUDING THE ORGANIC LIGHT EMITTING DEVICE - The invention is directed to an amine-based compound represented by Formula 1, an organic light emitting device with an organic film including the same, and a flat panel display device including the organic light emitting device. | 2010-02-04 |
| 20100025670 | Organic Thin Film Transistor and Organic Thin Film Light Emitting Transistor - An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an aromatic heterocyclic group in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided. | 2010-02-04 |
| 20100025671 | ELECTROLUMINESCENT DEVICES - The invention relates to an optical light emitting diode device having an electroluminescent layer and an electron transport layer, wherein the electron transport layer contains zirconium or hafnium quinolate for slowing loss of luminance at a given current density with increase of the time for which the device has been operative. The invention also relates to OLEDs, improved efficiency and/or lifetime is obtained by using zirconium or hafnium quino late as electron transport material. | 2010-02-04 |
| 20100025672 | THIN-FILM LAMINATE AND ORGANIC TRANSISTOR USING THE SAME - An organic transistor includes a semiconductor section that includes a thin-film laminate in which a first organic thin film and a second organic thin film are alternately stacked. The thin-film laminate includes at least two layers of the first organic thin film. The first organic thin film is a pentacene thin film, and the second organic thin film is an amorphous organic thin film. The pentacene thin film may be a pentacene bilayer thin film, and the amorphous organic thin film may be a tetraaryldiamine thin film. The tetraaryldiamine thin film may be an α-NPD thin film. The organic transistor has improved transistor characteristics (e.g., mobility, ON/OFF ratio, or threshold value control). | 2010-02-04 |
| 20100025673 | Light Emitting Diode and Method for Manufacturing the Same - The present invention relates to a light emitting diode ( | 2010-02-04 |
| 20100025674 | Oxide semiconductor and thin film transistor including the same - An oxide semiconductor and a thin film transistor (TFT) including the same. The oxide semiconductor may be obtained by adding hafnium (Hf) to gallium-indium-zinc oxide (GIZO) and may be used as a channel material of the TFT. | 2010-02-04 |
| 20100025675 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted staggered thin film transistor, variation in electric characteristics of the thin film transistor can be reduced. Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness of a region overlapping with the channel protective film is larger than that of a region in contact with a conductive film. | 2010-02-04 |
| 20100025676 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To offer a semiconductor device including a thin film transistor having excellent characteristics and high reliability and a method for manufacturing the semiconductor device without variation. The summary is to include an inverted-staggered (bottom-gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used for a semiconductor layer and a buffer layer is provided between the semiconductor layer and source and drain electrode layers. An ohmic contact is formed by intentionally providing a buffer layer containing In, Ga, and Zn and having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrode layers. | 2010-02-04 |
| 20100025677 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability and a manufacturing method of the semiconductor device with high mass productivity. The summary is that an inverted-staggered (bottom-gate) thin film transistor is included in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, a channel protective layer is provided in a region that overlaps a channel formation region of the semiconductor layer, and a buffer layer is provided between the semiconductor layer and source and drain electrodes. An ohmic contact is formed by intentionally providing the buffer layer having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrodes. | 2010-02-04 |
| 20100025678 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained. | 2010-02-04 |
| 20100025679 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed. | 2010-02-04 |
| 20100025680 | THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - In a thin-film transistor comprising respective elements of: three electrodes of a source electrode, a drain electrode and a gate electrode; a channel layer; and a gate insulating film, at least the channel layer is formed by a metal oxide film including indium. Therefore, it is possible to obtain the thin-film transistor, which can manufacture an element to a polymer substrate without using a high temperature process and which can achieve a high performance and a high reliability at low cost. | 2010-02-04 |
| 20100025681 | IC CHIP PACKAGE AND IMAGE DISPLAY DEVICE INCORPORATING SAME - A liquid crystal driver mounting package in accordance with an embodiment of the present invention contains a film base material and a liquid crystal driver connected to each other via an interposer. The liquid crystal driver includes first alignment marks on its face opposite the interposer. The interposer includes second alignment marks on its face opposite the liquid crystal driver. The first alignment marks and the second alignment marks are separated by about a distance which is in a tolerable range as a combining position where the liquid crystal driver and the interposer are attached when viewed from the normal of the face of the interposer opposite the liquid crystal driver. Thus, an IC chip (liquid crystal driver) package is provided which enables efficient positing of the IC chip and the interposer. | 2010-02-04 |
| 20100025682 | Interface device for wireless testing, semiconductor device and semiconductor package including the same, and method for wirelessly testing using the same - In an interface device for wireless testing capable of testing a semiconductor chip in a non-contact manner, a semiconductor device and a semiconductor package including the same, and a method for wirelessly testing a semiconductor device using the same are provided, the interface device for wireless testing includes an interface substrate, interface antennas on the interface substrate, and interface transmitting and receiving circuits on the interface substrate, wherein the interface transmitting and receiving circuits are electrically connected to input/output pads of a semiconductor chip via interface vias passing through the interface substrate. | 2010-02-04 |
| 20100025683 | REDUCTION OF EDGE EFFECTS FROM ASPECT RATION TRAPPING - A device includes a crystalline material within an area confined by an insulator. In one embodiment, the area confined by the insulator is an opening in the insulator having an aspect ratio sufficient to trap defects using an ART technique. Method and apparatus embodiments of the invention can reduce edge effects in semiconductor devices. Embodiments of the invention can provide a planar surface over a buffer layer between a plurality of uncoalesced ART structures. | 2010-02-04 |
| 20100025684 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LAYER, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - The present invention is a method for producing a group III nitride semiconductor layer in which a single crystal group III nitride semiconductor layer ( | 2010-02-04 |
| 20100025685 | Method and apparatus for forming contact hole - A method of forming a contact hole in an insulating film coating amorphous Si having an irregular surface formed on an insulating substrate, for connecting the amorphous Si to a conductor film formed on the insulating film includes etching the insulating film using reactive ion etching to a depth whereat the irregularity does not disappear, and sputter-etching by physically colliding Ar radicals produced by Ar gas plasma discharge onto the surface of the amorphous Si. | 2010-02-04 |
| 20100025686 | SEMICONDUCTOR DEVICE WITH AMORPHOUS SILICON MONOS MEMORY CELL STRUCTURE AND METHOD FOR MANUFACTURING THEREOF - A semiconductor device with an amorphous silicon (a-Si) metal-oxide-nitride-oxide-semiconductor (MONOS) memory cell structure. The device includes a substrate, a dielectric layer overlying the substrate, and one or more source or drain regions embedded in the dielectric layer with a co-planar surface of n-type a-Si and the dielectric layer. Additionally, the device includes a p-i-n a-Si diode junction. The device further includes an oxide-nitride-oxide (ONO) charge trapping layer overlying the a-Si p-i-n diode junction and a metal control gate overlying the ONO layer. A method for making the a-Si MONOS memory cell structure is provided and can be repeated to expand the structure three-dimensionally. | 2010-02-04 |
| 20100025687 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor and a method for manufacturing the same are provided. The image sensor comprises a readout circuitry, a first interlayer dielectric with an interconnection therein, a second interlayer dielectric, an image sensing device, and a contact plug. The readout circuitry is formed in a first substrate. The first interlayer dielectric is formed over the first substrate. The interconnection is electrically connected to the readout circuitry. The second interlayer dielectric is formed over the first interlayer dielectric. The image sensing device comprises a first laser annealed trench and is disposed over the second interlayer dielectric. The contact plug penetrates the first laser annealed trench and the second interlayer dielectric and electrically connects the image sensing device and the interconnection. | 2010-02-04 |
| 20100025688 | SEMICONDUCTOR ELEMENT AND DISPLAY DEVICE USING THE SAME - Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer, a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion. | 2010-02-04 |
| 20100025689 | THIN FILM TRANSISITOR ARRAY PANEL AND MANUFACTURING TMETHOD THEREOF - A thin film transistor array panel according to an embodiment includes: a substrate; a plurality of gate line formed on the substrate; a plurality of first capacitor electrodes formed on the substrate and separated from the gate lines; a plurality of data line intersecting the gate lines; a plurality of thin film transistor connected to the gate lines and the data lines; a plurality of second capacitor electrodes disposed on the first electrode; a plurality of interconnections connected to the second capacitor electrodes and the thin film transistor and disposed symmetrical to the data lines; and a plurality of pixel electrode, each pixel electrode including a first subpixel electrode connected to one of the thin film transistors and a second subpixel electrode connected to one of the first capacitor electrodes. | 2010-02-04 |
| 20100025690 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A thin film transistor substrate includes an insulating plate, a plurality of fan-out lines arranged on the insulating plate and including at least a pair of adjacent fan-out lines, a plurality of signal lines connected to the plurality of fan-out lines, and a plurality of thin film transistors connected to the plurality of signal lines. The adjacent fan-out lines partially overlap with each other, and each overlapping area of the adjacent fan-out lines is the same. | 2010-02-04 |
| 20100025691 | SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF - The present invention provides a semiconductor device having a high breakdown voltage and high reliability even if a gate electrode is formed to be thin. The present invention is a semiconductor device including a polycrystal semiconductor layer, a gate insulating film, and a gate electrode, stacked on an insulating substrate in this order, wherein the polycrystal semiconductor layer has a surface roughness of 9 nm or less, the gate insulating film has a multilayer structure including a silicon oxide film on the polycrystal semiconductor layer side and a film containing a material with a dielectric constant higher than a dielectric constant of silicon oxide on the gate electrode side. | 2010-02-04 |
