05th week of 2014 patent applcation highlights part 46 |
Patent application number | Title | Published |
20140030784 | Terpene Synthases and Methods of Using the Same - Disclosed are isolated nucleic acid molecules from | 2014-01-30 |
20140030785 | Methods for Isoprene and Pinene Production in Cyanobacteria - Methods of isoprenoid production are provided by the present invention. In particular, transgenic | 2014-01-30 |
20140030786 | COMPOSITIONS AND METHODS FOR TREATING AND DIAGNOSING CANCER - The present invention relates to compositions and methods for characterizing, treating and diagnosing cancer. In particular, the present invention provides a cancer stem cell profile, as well as novel stem cell cancer markers useful for the diagnosis, characterization, prognosis and treatment of cancer and in particular the targeting of solid tumor stem cells. | 2014-01-30 |
20140030787 | MULTISIGNAL REAGENTS FOR LABELING ANALYTES - Provided is a composition comprising an analyte bound covalently or through a first binding pair to a polymer. In this composition, the analyte is less than about 2000 MW; the polymer further comprises more than one signal or first member of a second binding pair; and the analyte is not a member of the first binding pair or the second binding pair. Also provided is an assay for an analyte. The assay comprises: combining a sample suspected of containing the analyte with the above-described composition and a binding agent that binds to the analyte; and detecting the signal or the first member of the second binding pair that is bound to the binding agent. In this assay, the amount of the signal or the first member of the second binding pair bound to the binding agent is inversely proportional to the analyte in the sample. Additionally provided is a multisignal labeling reagent comprising a first polymer covalently bound to (a) a reactive group or a first member of a first binding pair, and (b) more than one digoxigenin molecule. | 2014-01-30 |
20140030788 | MICROSCALE AND NANOSCALE STRUCTURES FOR MANIPULATING PARTICLES - The devices and systems described herein include one or more fluid paths, e.g., channels, and one or more selectively permeable obstacles arranged in the fluid path(s), each including a plurality of aligned nanostructures, e.g., nanotubes or nanorods, defining an outer surface of the obstacle and an internal network of voids. The obstacle(s) can further include binding moieties applied to the outer surface and/or to the surfaces of the individual nanostructures within the obstacle(s). The devices can be manufactured by forming the dense groupings of nanostructures to extend outwards and upwards from a substrate; forming a fluidic channel, bonding the fluidic channel to the substrate; and optionally applying binding moieties to the obstacles. The devices can be used to manipulate cells within fluid samples. | 2014-01-30 |
20140030789 | Producing Dicarboxylic Acids Using Polyketide Synthases - The present invention provides for a polyketide synthase (PKS) capable of synthesizing a dicarboxylic acid (diacid). Such diacids include diketide-diacids and triketide-diacids. The invention includes recombinant nucleic acid encoding the PKS, and host cells comprising the PKS. The invention also includes methods for producing the diacids. | 2014-01-30 |
20140030790 | ALKALINE PHOSPHATASE - The present invention provides AP that has a high specific activity and preferably has superior reactivity with respect to various luminescent substrates generally used for high-sensitivity immunoassay analysis. Further preferably, the present invention provides AP having a thermal stability higher than that of CIAP. The alkaline phosphatase of the present invention is derived from the genus | 2014-01-30 |
20140030791 | Mutant MT-SP1 proteases with altered substrate specificity or activity - MT-SP1 mutein proteases with altered specificity for the target molecules they cleave can be used to treat human diseases, such as cancer. Cleaving VEGF or VEGFR at certain substrate sequences with wild-type and mutein MT-SP1 proteases can be used to treat pathologies associated with angiogenesis. | 2014-01-30 |
20140030792 | Therapeutic Anti-Virus VLPS - This invention provides therapeutic viruses (TV) and methods to inhibit the propagation of a target virus. TVs can be rendered noninfectious by inactivating mutations, but also include sequences providing miRNA to inactivate essential mRNAs of the target virus. Methods can include provision of the TV and contact with a host cell harboring the target virus. The target virus providing the essential enzymes necessary to the replication of the TV and the TV disabling the target virus with the miRNA. | 2014-01-30 |
20140030793 | BACTERIA OF THE GENUS PSEUDONOCARDIA THAT ARE CAPABLE OF DEGRADING METHYL TERT-BUTYL ETHER (MTBE) OR ETHYL TERT-BUTYL ETHER (ETBE) INTO A SOLUTION IN EFFLUENT - This invention relates to bacteria of the genus | 2014-01-30 |
20140030794 | Fermentive Production of Four Carbon Alcohols - Methods for the fermentative production of four carbon alcohols is provided. Specifically, butanol, preferably isobutanol is produced by the fermentative growth of a recombinant bacterium expressing an isobutanol biosynthetic pathway. | 2014-01-30 |
20140030795 | MODIFIED YEAST STRAINS EXHIBITING ENHANCED FERMENTATION OF LIGNOCELLULOSIC HYDROLYSATES - The present invention relates to novel xylose-fermenting yeast strains (for example, yeast of the genus | 2014-01-30 |
20140030796 | System and Method for Using a Pulse Flow Circulation for Algae Cultivation - A system and method for using a pulse flow to circulate algae in an algae cultivation apparatus are provided. In order to counteract the negative effects of biofouling on algae cultivation equipment, a pulse flow is created to periodically move through an algae cultivation apparatus. The pulse flow will dislodge algae cells adhering to various surfaces of the apparatus, and it will also create turbulence to stir up any algae cells which may have settled onto the bottom of the apparatus. To produce an increased fluid flow rate required to create an effective pulse flow, a sump, which is periodically filled with drawn algal culture from the apparatus, is located at an elevated position above the apparatus. When released, the algal culture travels through a transfer pipe and into the apparatus with gravity causing the algal culture to flow at a very high rate. | 2014-01-30 |
20140030797 | Utilization of Ferric Ammonium Citrate for In Situ Remediation of Chlorinated Solvents - Accelerated dechlorination of soil and water contaminated with chlorinated solvents in situ is achieved by delivering ferric ammonium citrate into the soils and/or water. The induction of ferric ammonium citrate into sulfate-rich reducing conditions initiates a combined abiotic and biotic mechanism for the dechlorination of subsurface contaminants. Initial and rapid removal of chlorinated solvents is achieved by way of reductive transformation, a mechanism utilizing the creation of an iron-bound soil mineral (pyrite) followed by stimulating conditions for enhanced biological natural attenuation. | 2014-01-30 |
20140030798 | PROCESSING POLYNUCLEOTIDE-CONTAINING SAMPLES - Methods and systems for processing polynucleotides (e.g., DNA) are disclosed. A processing region includes one or more surfaces (e.g., particle surfaces) modified with ligands that regain polynucleotides under a first set of conditions (e.g., temperature and pH) and release the polynucleotides under a second set of conditions (e.g., higher temperature and/or more basic pH). The processing region can be used to, for example, concentrate polynucleotides of a sample and/or separate inhibitors of amplification reactions from the polynucleotides. Microfluidic devices with a processing region are disclosed. | 2014-01-30 |
20140030799 | APPARATUS FOR DETECTING TUMOR CELLS - Among others, the present invention provides apparatus for detecting circulating tumor cells, comprising a system delivery biological subject and a probing and detecting device, wherein the probing and detecting device includes a first micro-device and a first substrate supporting the first micro-device, the first micro-device contacts a biologic material to be detected and is capable of measuring at the microscopic level an electrical, magnetic, electromagnetic, thermal, optical, acoustical, biological, chemical, electro-mechanical, electro-chemical, electro-optical, electro-thermal, electro-chemical-mechanical, bio-chemical, bio-mechanical, bio-optical, bio-thermal, bio-physical, bio-electro-mechanical, bio-electro-chemical, bio-electro-optical, bio-electro-thermal, bio-mechanical-optical, bio-mechanical thermal, bio-thermal-optical, bio-electro-chemical-optical, bio-electro-mechanical-optical, bio-electro-thermal-optical, bio-electro-chemical-mechanical, physical or mechanical property, or a combination thereof, of the biologic subject. | 2014-01-30 |
20140030800 | Methods and compositions for a multipurpose, lab-on-chip device - Methods and compositions for developing a series of microfluidic, USB-enabled, wireless-enabled, lab-on-chip devices, designed to reduce the chain-of-custody handling of samples between sample acquisition and final reporting of data, to a single individual. These devices provide on-the-spot testing for micro- and nanoscale (molecular) analysis of blood, urine, infectious agents, toxins, measurement of therapeutic drug levels, purity-of-sample testing and presence of contaminants (toxic and non-toxic, volatile and non-volatile); and for the identification of individual components and formal compounds—elemental, biological, organic and inorganic—inclusive of foodstuffs, air, water, soil, oil and gas samples. These devices may be relatively inexpensive, ruggedly designed, lightweight and capable of being employed—depending upon the specific application—by individuals with limited training, in remote and extreme environments and settings: including combat zones, disaster areas, rural communities, tropical/arctic/desert and other inhospitable climates and challenging terrains. The device may be comprised of materials that are reclaimed, are re-usable and are recyclable. | 2014-01-30 |
20140030801 | ALGAE REACTOR - The invention relates to a reactor for growing algae in an aqueous liquid using photosynthesis. The reactor includes a tank for accommodating the aqueous liquid with the algae in it, and a lighting system including a light source with a plurality of LEDs, a mounting structure for supporting the LEDs, and a housing for accommodating the light source and the mounting structure. At least a portion of the housing is transparent for light emitted by the light source. The lighting system is at least partially submerged in the aqueous liquid. Additionally, in operation, the light transmitted through the transparent portion of the housing is of sufficient intensity to substantially prevent growth of the algae on the surface of the transparent portion of the housing. | 2014-01-30 |
20140030802 | Conditioning chamber for storing samples in a time-controlled manner and method for storing samples in a time-controlled manner - The invention relates to an air-conditioning space ( | 2014-01-30 |
20140030803 | DEVICE AND METHOD FOR CONCENTRATING AND DETECTING PATHOGENIC MICROBES FROM BLOOD PRODUCTS AND/OR THEIR DERIVATIVES - The invention concerns a device and a method for concentrating pathogenic germs potentially present in blood products or derivatives and for detecting said germs comprising the following steps: (a) subjecting a sample of said blood product to a blood cell aggregating treatment, (b) eliminating the aggregates formed at step (a) by passing the treated sample over a first filter allowing through the contaminating germs but not the cell aggregates, (c) selectively lyzing the residual cells of the filtrate obtained at step (b), (d) recuperating the contaminating germs by passing the lysate of step (c) over a second filter to detect the contaminating germs possibly trapped. | 2014-01-30 |
20140030804 | Animal Cell Culture Kit, Method for Culturing Animal Cells, Method for Selective Culture of Animal Cells and Cell Differentiation Method - The invention provides an animal cell culture kit to be used favorably for culturing animal cells, a method for culturing animal cells, a method for culturing selectively animal cells, and a method for differentiating a cell. An animal cell culture kit according to the invention includes an incubator containing one or more types of functional groups selected from the group consisting of hydrophilic functional groups and hydrophobic functional groups at predetermined contents on a surface, and a serum-free culture medium. Since the animal cell culture kit includes an incubator having a functional group suitable for adhesion and proliferation of specific animal cells, proliferation of animal cells can be promoted even with a serum-free culture medium. | 2014-01-30 |
20140030805 | METHODS AND SYSTEMS FOR HARVESTING CELLS - Methods for using vibration to harvest cells grown in | 2014-01-30 |
20140030806 | ADOPTIVE CELL THERAPY WITH YOUNG T CELLS - The invention provides a method of promoting regression of a cancer in a mammal comprising (i) culturing autologous T cells; (ii) expanding the cultured T cells; (iii) administering to the mammal nonmyeloablative lymphodepleting chemotherapy; and (iv) after administering nonmyeloablative lymphodepleting chemotherapy, administering to the mammal the expanded T cells, wherein the T cells administered to the mammal are about 19 to about 35 days old and have not been screened for specific tumor reactivity, whereupon the regression of the cancer in the mammal is promoted. | 2014-01-30 |
20140030807 | METHOD FOR STIMULATING FOXP3+ REGULATORY T CELL EXPRESSION OF CD39 - Disclosed is the use of isolated | 2014-01-30 |
20140030808 | Method for Cellular RNA Expression - The present invention relates to enhancing RNA expression in a cell such as a cell transfected with RNA by reducing the activity of RNA-dependent protein kinase (PKR). Thus, the present invention provides methods for expressing RNA in a cell comprising the step of reducing the activity of RNA-dependent protein kinase (PKR) in the cell. Reducing the activity of RNA-dependent protein kinase (PKR) in the cell increases the stability of RNA and/or increases the expression of RNA in the cell. | 2014-01-30 |
20140030809 | METHOD FOR PRODUCING EPITHELIAL STEM CELLS - An object of this invention is to provide a method, etc., for efficiently proliferating a pluripotent epithelial somatic stem cell. A method for producing an epithelial somatic stem cell comprising Steps (A) and (B) below:
| 2014-01-30 |
20140030810 | METHOD FOR THE DYNAMIC DETECTION OF LEAKAGES FOR SCR CATALYTIC CONVERTERS - A method and an arrangement for dynamic breakthrough detection is proposed. The arrangement comprises at least a transfer element, at least a memory unit in which sensor characteristic curves, at least a controller and an evaluation logic are stored. | 2014-01-30 |
20140030811 | Gradient Structures Interfacing Microfluidics and Nanofluidics, Methods for Fabrication and Uses Thereof - The present invention relates to a device for interfacing nanofluidic and microfluidic components suitable for use in performing high throughput macromolecular analysis. Diffraction gradient lithography (DGL) is used to form a gradient interface between a microfluidic area and a nanofluidic area. The gradient interface area reduces the local entropic barrier to nanochannels formed in the nanofluidic area. In one embodiment, the gradient interface area is formed of lateral spatial gradient structures for narrowing the cross section of a value from the micron to the nanometer length scale. In another embodiment, the gradient interface area is formed of a vertical sloped gradient structure. Additionally, the gradient structure can provide both a lateral and vertical gradient. | 2014-01-30 |
20140030812 | DEVICES AND METHODS FOR MEASURING THE ACIDITY OF AIRBORNE MATTER USING UV-VISIBLE SPECTROMETRY - Devices and methods for measuring the acidity of airborne matter are provided. A filter can be impregnated with an indicator dye which changes color in response to changes in acidity. After the sample passes through the filter, the filter can be analyzed using UV-visible spectrometry. | 2014-01-30 |
20140030813 | SYSTEM AND METHOD FOR MEASURING HYDRO CARBONATE CONTENT IN MINERALS - System for measuring the hydro carbonate content in minerals, particularly pyrobituminous shale minerals, while they pass through the transport or production system, in such a way as to permit the prior adjustment of the processing conditions of said minerals. The system consists of a set of equipment for the measurement of water content, material density and hydrogen content in the mineral, said equipment being combined in such a way as to create a specific time delay between the measurements, in order for the collected data to be micro processed and the processing conditions to be adjusted in real time, based on the calculated hydro carbonate content. | 2014-01-30 |
20140030814 | TOTAL ORGANIC CARBON METER PROVIDED WITH SYSTEM BLANK FUNCTION - A total organic carbon measuring device comprises: a sample supply unit that collects and supplies sample water; an oxidative decomposition unit that is connected to the sample supply unit and oxidizes organic matter contained in the sample water supplied from the sample supply unit to carbon dioxide; a carbon dioxide separation unit that transfers carbon dioxide from the sample water that has passed through the oxidative decomposition unit to measurement water consisting of deionized water; a conductivity measuring unit that measures the conductivity of the measurement water flowing from the carbon dioxide separation unit; and an arithmetic processing unit that calculates the TOC concentration of the sample water from a measured value obtained by the conductivity measuring unit. A measured value obtained by the conductivity measuring unit when pure water subjected to aeration treatment is allowed to pass through the oxidative decomposition unit of which oxidative decomposition function is turned off and then flows through a sample water channel is defined as a system blank value. | 2014-01-30 |
20140030815 | PINHOLE INSPECTION SYSTEM AND APPARATUS FOR MEMBRANE ELECTRODE ASSEMBLY OF FUEL CELL - Disclosed is a pinhole inspection apparatus, system and method for a membrane electrode assembly of a fuel cell, which can easily detect the position of a pinhole using water and a pH test paper from discoloration caused when the water is in contact with the pH test paper through the pinhole, thus solving the existing problems and allowing the membrane electrode assembly to be reused after the inspection. In particular, a lower fixture is configured to support the membrane electrode assembly and water is uniformly distributed on an upper surface of the membrane electrode assembly. A pH test paper is inserted between the membrane electrode assembly and the lower fixture and discolored upon coming in contact with water that passes through a pinhole in the membrane electrode assembly, thus detecting the presence and position of the pinhole. | 2014-01-30 |
20140030816 | REAGENT IMPREGNATED SWIPE FOR CHEMICAL DETECTION - The invention is directed to a swipe with at least one ionization reagent associated with the swipe for detecting target analytes and methods of detecting the target analyte molecules that can indicate the presence of, for example, explosives, narcotics, chemical warfare agents, biological warfare agents, or toxins. The swipe can be used to transfer molecules from a surface to the swipe for further analysis. In particular, the swipes can include an ionization reagent that is preferably a low volatility compound and capable of forming ionization reagent-analyte complexes with target analytes. The swipe can also include multiple ionization reagents with different volatilities such that they are released sequentially during a thermal ramp-up. Alternatively, the swipe can have multiple ionization reagents associated with spatially separated portions of the swipe such that they can be releasable sequentially to detect multiple target analytes. | 2014-01-30 |
20140030817 | METHOD AND APPARATUS FOR STORING AND DISPENSING REAGENT BEADS - Embodiments of the invention provide an efficient and effective technique for storing and dispensing reagent beads. In one embodiment, an apparatus is provided for dispensing reagent beads contained in a bead storage device which includes a bead carrier having a plurality of wells; a plurality of reagent beads disposed in the wells; and a cover tape releasably attached to the bead carrier to cover the wells and retain the reagent beads in the wells. The apparatus comprises a channel in which to place the bead storage device with the bead carrier facing a support wall of the channel and the cover tape facing a stripping wall of the channel. The stripping wall includes a stripping gap disposed between a stripping edge and an opposite edge, and a dispense opening provided adjacent the opposite edge on a side of the stripping wall opposite from the stripping edge. The cover tape is insertable through the stripping gap to be pulled against the stripping edge to peel the cover tape from the bead carrier to move the wells of the bead carrier inside the channel toward the dispense opening and expose the wells individually to dispense the reagent beads. | 2014-01-30 |
20140030818 | SOLID-PHASE MICROEXTRACTION - In a method for performing a solid-phase micro-extraction, a holding device connected to an extraction device and secured on an adapter is held, while an actuating device connected to a guide device is moved. A device for performing a solid-phase microextraction comprises an actuating device connected to a guide device, and a holding device connected to an extraction device, wherein the extraction device is guided at least partially in the guide device, and wherein the extraction device is movable relative to the guide device by means of an actuation of the actuating device. | 2014-01-30 |
20140030819 | NANOPILLAR FIELD-EFFECT AND JUNCTION TRANSISTORS WITH FUNCTIONALIZED GATE AND BASE ELECTRODES - Systems and methods for molecular sensing are described. Molecular sensors are described which are based on field-effect or bipolar junction transistors. These transistors have a nanopillar with a functionalized layer contacted to either the base or the gate electrode. The functional layer can bind molecules, which causes an electrical signal in the sensor. | 2014-01-30 |
20140030820 | TRIAZACYCLONONANE-BASED PHOSPHINATE LIGAND AND ITS USE FOR MOLECULAR IMAGING - The present invention relates to the field of molecular imaging, i.e. nuclear and fluorescent imaging using metal ion radionuclides in combination with chelates highly functionalized with peptidic, nonpeptidic or protein ligands or additional signalling moieties. | 2014-01-30 |
20140030821 | LOCALIZED PLASMON ENHANCING FLUORESCENCE PARTICLES, LOCALIZED PLASMON ENHANCED FLUORESCENCE DETECTING CARRIER, LOCALIZED PLASMON ENHANCED FLUORESCENCE DETECTING APPARATUS, AND FLUORESCENCE DETECTING METHOD - Enhancing fluorescent particles constituted by a plurality of fine metal particles and a plurality of fluorescent dye molecules dispersed and enveloped in a light transmitting dielectric material are employed. Here, the particle size of the fine metal particles is greater than 10 nm and 40 nm or less, and the volume within the enhancing fluorescent particles occupied by the fine metal particles is within a range from 5% to 40%. | 2014-01-30 |
20140030822 | METHOD FOR IMMOBILIZING AN ANTIBODY ON A SELF-ASSEMBLED MONOLAYER - The method of the present disclosure is characterized by that one molecule of the amino acid is interposed between the self-assembled monolayer and the molecule of the antibody. For example, a method for immobilizing an antibody on a self-assembled monolayer is provided and the method including the following steps (a) and (b) in this order: a step (a) of preparing a substrate comprising one molecule of an amino acid and the self-assembled monolayer and a step (b) of supplying the antibody to the substrate to form a peptide bond represented by a predetermined chemical formula as a result of reaction between the carboxyl group of the one molecule of the amino acid and the amino group of the antibody. | 2014-01-30 |
20140030823 | METHOD OF DETECTING PANCREATIC DISEASE AND PANCREAS TESTING KIT - A pancreatic disease is tested for with high sensitivity even with simple equipment and a simple procedure. Provided is a method of detecting pancreatic disease including detecting a concentration of S100P in at least one of a pancreatic juice and a body fluid containing pancreatic juice collected from a test subject by immunochromatography. Additionally provided is a pancreas testing kit including an immunochromatography device that holds an anti-S100P antibody and a collection vessel that retains a protease inhibitor that inhibits an activity of a protease contained in the pancreatic juice. | 2014-01-30 |
20140030824 | SEMICONDUCTOR DEVICE HAVING CAPACITOR WITH CAPACITOR FILM HELD BETWEEN LOWER ELECTRODE AND UPPER ELECTRODE - A ferroelectric memory is constituted to comprise a capacitor being formed above a semiconductor substrate ( | 2014-01-30 |
20140030825 | APPARATUS FOR MANUFACTURING AN INORGANIC THIN-FILM SOLAR CELL, AND METHOD FOR CONTROLLING SAME - The present invention relates to an apparatus for manufacturing an inorganic thin-film solar cell, the apparatus including: a substrate stage which is mounted in a chamber and in which a solar cell substrate is disposed; and an inorganic powder supply unit including a nozzle configured to discharge an inorganic powder aerosol containing an inorganic powder onto the substrate stage in a supersonic flow so as to form a solar cell layer on the solar cell substrate, and an inorganic powder supply portion configured to supply the inorganic powder aerosol to the nozzle. | 2014-01-30 |
20140030826 | POLISHING METHOD - A method of polishing a wafer having a Ru film and a Ta film or TaN film beneath the Ru film is provided. This polishing method includes: polishing the Ru film by bringing the wafer into sliding contact with a polishing pad; measuring a thickness of the Ru film by a film thickness sensor while polishing the Ru film; calculating a derivative value of an output value of the film thickness sensor; detecting a predetermined point of change in the derivative value; and determining a removal point of the Ru film from a point of time when the point of change is detected. | 2014-01-30 |
20140030827 | UNDERFILL ADHESION MEASUREMENTS AT A MICROSCOPIC SCALE - Methods and systems to method to determine an adhesion force of an underfill material to a chip assembled in a flip-chip module are provided. A method includes forming a flip-chip module including a chip connected to a substrate with a layer of underfill material adhered to the chip and the substrate. The method also includes forming a block from the layer of underfill material. The method further includes measuring a force required to shear the block from a surface of the flip-chip module. | 2014-01-30 |
20140030828 | METHOD FOR MANUFACTURING LED - An LED (light emitting diode) includes a base, a pair of leads fixed on the base, a housing secured on the leads, a chip mounted on one lead and an encapsulant sealing the chip. The housing defines a cavity to receive the chip. The cavity includes an upper chamber and a lower chamber communicating with the upper chamber. The lower chamber is gradually expanded along a top-to-bottom direction of the LED, and the upper chamber is gradually expanded along a bottom-to-top direction of the LED. The encapsulant substantially fills the lower chamber and the upper chamber. A method for manufacturing the LED is also disclosed. | 2014-01-30 |
20140030829 | Optoelectronic Module Having a Carrier Substrate and a Plurality of Radiation-Emitting Semiconductor Components and Method for the Production Thereof - An optoelectronic module is described including a carrier substrate and a plurality of radiation-emitting semiconductor components. The carrier substrate includes structured conductor tracks. The semiconductor components each include an active layer for generating electromagnetic radiation, a first contact area and a second contact area. The first contact area is in each case arranged on that side of the semiconductor components that is remote from the carrier substrate. The semiconductor components are provided with an electrically insulating layer having a cutout in a region of the first contact area. Conductive structures are arranged in regions on the insulating layer. One of the conductive structures electrically conductively connects at least the first contact area of a semiconductor component to a further first contact area of a further semiconductor component or to a conductor track of the carrier substrate. A method for producing such a module is also described. | 2014-01-30 |
20140030830 | METHOD OF FABRICATING ORGANIC LIGHT EMITTING DEVICE - Provided is a method of fabricating an organic light emitting device that may form a light scattering layer having an irregular random structure at a low temperature. The method includes providing a substrate coated with a precursor layer; sequentially forming a metal layer and an organic layer on the precursor layer; performing a heat treatment of the organic layer to form an organic mask from the organic layer; patterning the metal layer by using the organic mask to form a metal mask; patterning the precursor layer by using the metal mask to form a light scattering layer having an irregular random structure; removing the metal mask and the organic mask; and sequentially stacking a planarization layer, a first electrode, an organic light emitting layer, a second electrode, and a passivation layer on the light scattering layer. | 2014-01-30 |
20140030831 | MANUFACTURING METHOD OF PIXEL STRUCTURE - A manufacturing method of pixel structure includes forming a first conductive layer on a substrate and forming a first insulation layer thereon; forming a second conductive layer on the first insulation layer; forming a second insulation layer on the second conductive layer; forming a semiconductor layer on the second insulation layer above the gate; forming a third conductive layer on the second insulation layer, wherein the gate, the semiconductor layer, the source, and the drain together constitute a thin film transistor, and the first electrode, the second electrode, and the third electrode together constitute a capacitor; forming a third insulation layer on the third conductive layer; and forming a pixel electrode on the third insulation layer, the pixel electrode being electrically connected to the drain. | 2014-01-30 |
20140030832 | Pixelated Scintillation Detector and Method of Making Same - A scintillation detector may include a pixelated scintillation crystal mechanically and optically coupled to a position sensitive photodetector, such as a position sensitive photomultiplier tube (PSPMT). The pixelated scintillation crystal may be coupled to the position sensitive photodetector without using a window between the crystal and photodetector. According to one method of constructing the scintillation detector, a solid scintillation crystal may be coupled to the position sensitive photodetector and cut while coupled to the photodetector to form the pixelated scintillation crystal. | 2014-01-30 |
20140030833 | METHOD FOR PRODUCING SUBSTRATE HAVING CONCAVITY AND CONVEXITY STRUCTURE AND METHOD FOR PRODUCING ORGANIC EL ELEMENT USING THE SAME - A method for producing a substrate having an irregular concave and convex surface for scattering light includes: manufacturing a substrate having the irregular concave and convex surface; irradiating the concave and convex surface of the manufactured substrate with inspection light tom a direction oblique to a normal direction and detecting returning light of the inspection light returned from the concave and convex surface by a light-receiving element provided in the normal direction of the concave and convex surface; and judging unevenness of luminance of the concave and convex surface by an image processing device based on light intensity of the returning light received. An organic EL element which includes a diffraction-grating substrate having an irregular concave and convex surface is produced with a high throughput. | 2014-01-30 |
20140030834 | FILM-FORMING METHOD AND FILM-FORMING APPARATUS OF ORGANIC LIGHT-EMITTING DIODE - A film-forming method of organic light-emitting diode and a film-forming apparatus are disclosed. The method is to gasify organic materials to gaseous organic molecules and make the gaseous organic molecules to move to a surface of a substrate, and generate an electric field on the surface of the substrate so as to orient the gaseous organic molecules in the same direction. As the gaseous organic molecules contact the surface of the substrate, and the gaseous organic molecules condense to solid organic molecules to form a molecular film, and the solid organic molecules in the molecular film are oriented in the same direction. | 2014-01-30 |
20140030835 | PHOTONIC MODULATOR WITH A SEMICONDUCTOR CONTACT - A semiconductor structure includes a photonic modulator and a field effect transistor on a same substrate. The photonic modulator includes a modulator semiconductor structure and a semiconductor contact structure employing a same semiconductor material as a gate electrode of a field effect transistor. The modulator semiconductor structure includes a lateral p-n junction, and the semiconductor contact structure includes another lateral p-n junction. To form this semiconductor structure, the modulator semiconductor structure in the shape of a waveguide and an active region of a field effect transistor region can be patterned in a semiconductor substrate. A gate dielectric layer is formed on the modulator semiconductor structure and the active region, and is subsequently removed from the modulator semiconductor structure. A semiconductor material layer is deposited, patterned, and doped with patterns to form a gate electrode for the field effect transistor and the semiconductor contact structure for the waveguide. | 2014-01-30 |
20140030836 | Silicon Carbide Lamina - A method of fabricating an electronic device includes providing a silicon carbide or diamond-like carbon donor body and implanting ions into a first surface of the donor body to define a cleave plane. After implanting, an epitaxial layer is formed on the first surface, and a temporary carrier is coupled to the epitaxial layer. A lamina is cleaved from the donor body at the cleave plane, and the temporary carrier is removed from the lamina. In some embodiments a light emitting diode or a high electron mobility transistor is fabricated from the lamina and epitaxial layer. | 2014-01-30 |
20140030837 | METHOD OF FABRICATING GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE - A method of fabricating a gallium nitride (GaN)-based semiconductor device. The method includes preparing a GaN substrate having lower and upper surfaces; growing GaN-based semiconductor layers on the upper surface of the GaN substrate to form a semiconductor stack; forming a support substrate on the semiconductor stack; and separating the GaN substrate from the semiconductor stack. The separating of the GaN substrate includes irradiating a laser from the lower surface of the GaN substrate. The laser is transmitted through the lower surface of the GaN substrate and forms a laser absorption region inside a structure consisting of the GaN substrate and the semiconductor stack. | 2014-01-30 |
20140030838 | CHARGE SENSORS USING INVERTED LATERAL BIPOLAR JUNCTION TRANSISTORS - A method for forming a sensor includes forming a base-region barrier in contact with a base substrate. The base-region barrier includes a monocrystalline semiconductor having a same dopant conductivity as the base substrate. An emitter and a collector are formed in contact with and on opposite sides of the base-region barrier to form a bipolar junction transistor. The collector, the emitter and the base-region barrier are planarized to form a level surface opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor. | 2014-01-30 |
20140030839 | METHOD OF DIFFUSING IMPURITY-DIFFUSING COMPONENT AND METHOD OF MANUFACTURING SOLAR CELL - A method of diffusing an impurity-diffusing component including forming a first diffusing agent layer containing a first conductivity type impurity-diffusing component on the surface of a semiconductor substrate; calcining the first diffusing agent layer; forming a second diffusing agent layer containing a second conductivity type impurity-diffusing component on the surface of the semiconductor substrate excluding the region where the first diffusing agent layer is formed; and heating the semiconductor substrate at a temperature higher than the calcination temperature to diffuse the first and second conductivity type impurity-diffusing components to the semiconductor substrate. | 2014-01-30 |
20140030840 | SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - Disclosed herein is a semiconductor device including an element isolation region configured to be formed on a semiconductor substrate, wherein the element isolation region is formed of a multistep trench in which trenches having different diameters are stacked and diameter of an opening part of the lower trench is smaller than diameter of a bottom of the upper trench. | 2014-01-30 |
20140030841 | Flexible High-Voltage Adaptable Current Photovoltaic Modules And Associated Methods - A flexible photovoltaic module for converting light into an electric current includes a plurality of electrically interconnected flexible photovoltaic submodules monolithically integrated onto a common flexible substrate. Each photovoltaic submodule includes a plurality of electrically interconnected flexible thin-film photovoltaic cells monolithically integrated onto the flexible substrate. A flexible photovoltaic module for converting light into an electric current includes a backplane layer for supporting the photovoltaic module. A first pottant layer is disposed on the backplane layer, and a photovoltaic submodule assembly is disposed on the first pottant layer. The photovoltaic submodule assembly has at least one photovoltaic submodule, where each photovoltaic submodule includes a plurality of thin-film photovoltaic cells. A second pottant layer is disposed on the photovoltaic submodule assembly, and a upper laminate layer disposed on the second pottant layer. | 2014-01-30 |
20140030842 | BACKSIDE ILLUMINATED IMAGE SENSOR HAVING CAPACITOR ON PIXEL REGION - An approach is provided for forming a backside illuminated image sensor that includes a semiconductor substrate having a front side and backside, a sensor element formed overlying the frontside of the semiconductor substrate, and a capacitor formed overlying the sensor element. | 2014-01-30 |
20140030843 | OHMIC CONTACT OF THIN FILM SOLAR CELL - A chalcogen-resistant material including at least one of a carbon nanotube layer and a high work function material layer is deposited on a transition metal layer on a substrate. A semiconductor chalcogenide/kesterite material layer is deposited over the chalcogen-resistant material. The carbon nanotubes, if present, can reduce contact resistance by providing direct electrically conductive paths from the transition metal layer through the chalcogen-resistant material and to the semiconductor chalcogenide material. The high work function material layer, if present, can reduce contact resistance by reducing chalcogenization of the transition metal in the transition metal layer. Reduction of the contact resistance can enhance efficiency of a solar cell including the chalcogenide semiconductor material. | 2014-01-30 |
20140030844 | BIFACIAL SOLAR CELL USING ION IMPLANTATION - An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the p-type emitter is on the front side. To maximize the diffusion of majority carriers and lower the series resistance between the contact and the substrate, the regions beneath the metal contacts are more heavily doped. Thus, regions of higher dopant concentration are created in at least one of the FSF or the emitter. These regions are created through the use of selective implants, which can be performed on one or two sides of the bifacial solar cell to improve efficiency. | 2014-01-30 |
20140030845 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The amount of nitrogen that is transferred to an oxide semiconductor film of a transistor including the oxide semiconductor film is reduced. In addition, in a semiconductor device which includes a transistor including an oxide semiconductor film, change in electrical characteristics is suppressed and reliability is improved. After a nitrogen-containing oxide insulating film is formed over a transistor including an oxide semiconductor film where a channel region is formed, nitrogen is released from the nitrogen-containing oxide insulating film by heat treatment. Note that the nitrogen concentration which is obtained by secondary ion mass spectrometry (SIMS) is greater than or equal to the lower limit of detection by SIMS and less than 3×10 | 2014-01-30 |
20140030846 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized. | 2014-01-30 |
20140030847 | BONDING METHOD USING POROSIFIED SURFACES FOR MAKING STACKED STRUCTURES - A bonded device having at least one porosified surface is disclosed. The porosification process introduces nanoporous holes into the microstructure of the bonding surfaces of the devices. The material property of a porosified material is softer as compared to a non-porosified material. For the same bonding conditions, the use of the porosified bonding surfaces enhances the bond strength of the bonded interface as compared to the non-porosified material. | 2014-01-30 |
20140030848 | INTERLAYER FILLER COMPOSITION FOR THREE-DIMENSIONAL INTEGRATED CIRCUIT, COATING FLUID AND PROCESS FOR PRODUCING THREE-DIMENSIONAL INTEGRATED CIRCUIT - To provide an interlayer filler composition which, in 3D lamination of semiconductor device chips, forms a highly thermally conductive filling interlayer simultaneously with the bonding of solder bumps or the like and lands between semiconductor device chips, a coating fluid and a process for producing a three-dimensional integrated circuit. | 2014-01-30 |
20140030849 | Pick-and-Place Tool for Packaging Process - An apparatus includes a guide ring, and a bond head installed on the guide ring. The bond head is configured to move in loops along the guide ring. The bond head is configured to pick up dies and place the dies during the loops | 2014-01-30 |
20140030850 | PACKAGE SUBSTRATE PROCESSING METHOD - A package substrate processing method of dividing a package substrate into a plurality of individual package devices along a plurality of division lines, the package substrate being composed of an electrode plate and a synthetic resin layer formed on the back side of the electrode plate for molding the package devices. The package substrate processing method includes an internal stress relieving step of cutting the electrode plate of the package substrate along a selected one of the division lines to form a relief groove, thereby relieving an internal stress in the package substrate, a resin layer planarizing step of grinding the synthetic resin layer of the package substrate to thereby planarize the synthetic resin layer, and a package substrate dividing step of dividing the package substrate held on a holding table under suction along the division lines. | 2014-01-30 |
20140030851 | Method for Fabricating Array-Molded Package-on-Package - An improved method for fabricating a semiconductor device provides a mold having a top portion and a bottom portion. The top portion includes recesses suitable for a cavity and a plurality of protrusions shaped as truncated cones. A thin sheet of compliant inert polymer is placed over the surface of the top portion. A molding compound is introduced into the cavity to form a encapsulation body covering a semiconductor chip and linear arrays of contact pads adjacent to the chip. Each conical protrusion matches a contact pad location. The thin sheet of compliant inert polymer is peeled off the top portion. The mold is opened and the encapsulated semiconductor chip is removed. | 2014-01-30 |
20140030852 | SEMICONDUCTOR PACKAGE WITH INTEGRATED INTERFERENCE SHIELDING AND METHOD OF MANUFACTURE THEREOF - An integrated electromagnetic interference (EMI) shield for a semiconductor module package. The integrated EMI shield includes a plurality of wirebond springs electrically connected between a ground plane in the substrate of the package and a conductive layer printed on the top of the package mold compound. The wirebond springs have a defined shape that causes a spring effect to provide contact electrical connection between the tops of the wirebond springs and the conductive layer. The wirebond springs can be positioned anywhere in the module package, around all or some of the devices included in the package, to create a complete EMI shield around those devices. | 2014-01-30 |
20140030853 | ELECTRICAL CONNECTIVITY FOR CIRCUIT APPLICATIONS - According to example configurations herein, a leadframe includes a first conductive strip, a second conductive strip, and a third conductive strip disposed substantially adjacent and substantially parallel to each other. A semiconductor chip substrate includes a first array of switch circuits disposed adjacent and parallel to a second array of switch circuits. Source nodes in switch circuits of the first array are disposed substantially adjacent and substantially parallel to source nodes in switch circuits of the second array. When the semiconductor chip and the leadframe device are combined to form a circuit package, a connectivity interface between the semiconductor chip and conductive strips in the circuit package couples each of the source nodes in switch circuits of the first array and each of the multiple source nodes in switch circuits of the second array to a common conductive strip in the leadframe device. | 2014-01-30 |
20140030854 | High Voltage Cascoded III-Nitride Rectifier Package - Some exemplary embodiments of high voltage cascoded III-nitride semiconductor package utilizing clips on a package support surface have been disclosed. One exemplary embodiment comprises a III-nitride transistor attached to a package support surface and having an anode of a diode stacked over a source of the III-nitride transistor, a first conductive clip coupled to a gate of the III-nitride transistor and the anode of the diode, and a second conductive clip coupled to a drain of the III-nitride transistor. The conductive clips are connected to the package support surface and expose respective flat portions that are surface mountable. In this manner, reduced package footprint, improved surge current capability, and higher performance may be achieved compared to conventional wire bonded packages. Furthermore, since a low cost printed circuit board (PCB) may be utilized for the package support surface, expensive leadless fabrication processes may be avoided for cost effective manufacturing. | 2014-01-30 |
20140030855 | METHOD OF MANUFACTURING FLIP CHIP PACKAGE - A method of manufacturing a flip chip package includes: providing a board including a conductive pad disposed inside a mounting region of the board on which the electronic device is to be mounted, and a connection pad disposed outside the mounting region; forming a resin layer on the board; forming a trench by removing a part of the resin layer or forming an uneven portion at a portion of a surface of the resin layer; forming, on the trench or uneven portion, a dam member preventing leakage of an underfill between the mounting region and the connection pad; and mounting the electronic device on the mounting region. | 2014-01-30 |
20140030856 | THREE DIMENSIONAL MEMORY AND METHODS OF FORMING THE SAME - Some embodiments include a memory device and methods of forming the memory device. One such memory device includes a first group of memory cells, each of the memory cells of the first group being formed in a cavity of a first control gate located in one device level of the memory device. The memory device also includes a second group of memory cells, each of the memory cells of the second group being formed in a cavity of a second control gate located in another device level of the memory device. Additional apparatus and methods are described. | 2014-01-30 |
20140030857 | GRAPHENE DEVICE MANUFACTURING APPARATUS AND GRAPHENE DEVICE MANUFACTURING METHOD USING THE APPARATUS - A graphene device manufacturing apparatus includes an electrode, a graphene structure including a metal catalyst layer formed on a substrate, a protection layer, and a graphene layer between the protection layer and the metal catalyst layer, a power unit configured to apply a voltage between the electrode and the metal catalyst layer, and an electrolyte in which the graphene structure is at least partially submerged. | 2014-01-30 |
20140030858 | Enhancement Mode III-Nitride Device - A III-nitride switch includes a recessed gate contact to produce a nominally off, or an enhancement mode, device. By providing a recessed gate contact, a conduction channel formed at the interface of two III-nitride materials is interrupted when the gate electrode is inactive to prevent current flow in the device. The gate electrode can be a schottky contact or an insulated metal contact. Two gate electrodes can be provided to form a bi-directional switch with nominally off characteristics. The recesses formed with the gate electrode can have sloped sides. The gate electrodes can be formed in a number of geometries in conjunction with current carrying electrodes of the device. | 2014-01-30 |
20140030859 | METHOD OF MAKING A WIRE-BASED SEMICONDUCTOR DEVICE - In some embodiments, a method for manufacturing forms a semiconductor device, such as a transistor. A dielectric stack is formed on a semiconductor substrate. The stack comprises a plurality of dielectric layers separated by one of a plurality of spacer layers. Each of the plurality of spacer layers is formed of a different material than immediately neighboring layers of the plurality of dielectric layers. A vertically-extending hole is formed through the plurality of dielectric layers and the plurality of spacer layers. The hole is filled by performing an epitaxial deposition, with the material filling the hole forming a wire. The wire is doped and three of the dielectric layers are sequentially removed and replaced with conductive material, thereby forming upper and lower contacts to the wire and a gate between the upper and lower contacts. The wire may function as a channel region for a transistor. | 2014-01-30 |
20140030860 | MANUFACTURING METHOD OF TUNNEL OXIDE OF NOR FLASH MEMORY - A manufacturing method of tunnel oxide of NOR flash memory controls the temperature and thickness of tunnel oxide in a gate structure to prevent a channel region to change its doping concentration and range due to a high-temperature manufacturing process, so as to overcome the leakage current and improve the reliability of storing data. | 2014-01-30 |
20140030861 | STRESS ENHANCED LDMOS TRANSISTOR TO MINIMIZE ON-RESISTANCE AND MAINTAIN HIGH BREAKDOWN VOLTAGE - A lateral diffused metal-oxide-semiconductor field effect transistor (LDMOS transistor) employs a stress layer that enhances carrier mobility (i.e., on-current) while also maintaining a high breakdown voltage for the device. High breakdown voltage is maintained, because an increase in doping concentration of the drift region is minimized A well region and a drift region are formed in the substrate adjacent to one another. A first shallow trench isolation (STI) region is formed on and adjacent to the well region, and a second STI region is formed on and adjacent to the drift region. A stress layer is deposited over the LDMOS transistor and in the second STI region, which propagates compressive or tensile stress into the drift region, depending on the polarity of the stress layer. A portion of the stress layer can be removed over the gate to change the polarity of stress in the inversion region below the gate. | 2014-01-30 |
20140030862 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A semiconductor device includes: an active region configured over a substrate to include a first conductive-type first deep well and second conductive-type second deep well forming a junction therebetween. A gate electrode extends across the junction and over a portion of first conductive-type first deep well and a portion of the second conductive-type second deep well. A second conductive-type source region is in the first conductive-type first deep well at one side of the gate electrode whereas a second conductive-type drain region is in the second conductive-type second deep well on another side of the gate electrode. A first conductive-type impurity region is in the first conductive-type first deep well surrounding the second conductive-type source region and extending toward the junction so as to partially overlap with the gate electrode and/or partially overlap with the second conductive-type source region. | 2014-01-30 |
20140030863 | METHODS OF FORMING CAPACITORS - A method of forming capacitors includes providing first capacitor electrodes within support material. The first capacitor electrodes contain TiN and the support material contains polysilicon. The polysilicon-containing support material is dry isotropically etched selectively relative to the TiN-containing first capacitor electrodes using a sulfur and fluorine-containing etching chemistry. A capacitor dielectric is formed over sidewalls of the first capacitor electrodes and a second capacitor electrode is formed over the capacitor dielectric. Additional methods are disclosed. | 2014-01-30 |
20140030864 | Method of eDRAM DT Strap Formation In FinFET Device Structure - The specification and drawings present a new method, device and computer/software related product (e.g., a computer readable memory) are presented for realizing eDRAM strap formation in Fin FET device structures. Semiconductor on insulator (SOI) substrate comprising at least an insulator layer between a first semiconductor layer and a second semiconductor layer is provided. The (metal) strap formation is accomplished by depositing conductive layer on fins portion of the second semiconductor layer (Si) and a semiconductor material (polysilicon) in each DT capacitor extending to the second semiconductor layer. The metal strap is sealed by a nitride spacer to prevent the shorts between PWL and DT capacitors. | 2014-01-30 |
20140030865 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING CYLINDRICAL LOWER CAPACITOR ELECTRODE - To provide a semiconductor device including: plural capacitors each including a cylindrical lower electrode having an internal wall and an external wall, and an upper electrode that covers the external wall of the lower electrode via a capacitance dielectric film; and a supporting film having a buried portion buried in an internal region surrounded by the internal wall of the lower electrode, and a supporting portion a part of which is positioned within the internal region and remaining parts of which are positioned at outside of the internal region. The supporting portion sandwiches an upper end of the lower electrode at both ends of the upper end by covering the internal wall and the external wall of the upper end of the lower electrode. | 2014-01-30 |
20140030866 | METHOD AND APPARATUS FOR PREPARING POLYSILAZANE ON A SEMICONDUCTOR WAFER - A method for depositing a polysilazane on a semiconductor wafer is provided. The method includes steps of disposing a silazane onto the semiconductor wafer, and heating the silazane to form the polysilazane on the semiconductor wafer. An apparatus for preparing a polysilazane on a semiconductor wafer is also provided. | 2014-01-30 |
20140030867 | METHODS OF FABRICATING A SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device includes forming an etch-target layer on a substrate having an alignment key, forming a transparent first pattern on the etch-target layer to face the alignment key, forming an opaque second pattern on the etch-target layer to be adjacent to the first pattern, and etching the etch-target layer using the first pattern and the second pattern as an etch mask. | 2014-01-30 |
20140030868 | DEPOSIT/ETCH FOR TAPERED OXIDE - A process for fabricating a tapered field plate dielectric for high-voltage semiconductor devices is disclosed. The process may include depositing a thin layer of oxide, depositing a polysilicon hard mask, depositing a resist layer and etching a trench area, performing deep silicon trench etch, and stripping the resist layer. The process may further include repeated steps of depositing a layer of oxide and anisotropic etching of the oxide to form a tapered wall within the trench. The process may further include depositing poly and performing further processing to form the semiconductor device. | 2014-01-30 |
20140030869 | SELF-ALIGNED SEMICONDUCTOR TRENCH STRUCTURES - Methods for forming a semiconductor device include forming self-aligned trenches, in which a first set of trenches is used to align a second set of trenches. Methods taught herein can be used as a pitch doubling technique, and may therefore enhance device integration. Further, employing a very thin CMP stop layer, and recessing surrounding materials by about an equal amount to the thickness of the CMP stop layer, provides improved planarity at the surface of the device. | 2014-01-30 |
20140030870 | SOS SUBSTRATE HAVING LOW SURFACE DEFECT DENSITY - Method of making a bonded SOS substrate with a semiconductor film on or above a sapphire substrate by implanting ions from a surface of the semiconductor substrate to form an ion-implanted layer; activating at least a surface of one of the sapphire substrate and the semiconductor substrate from which the ions have been implanted; bonding the surface of the semiconductor substrate and the surface of the sapphire substrate at a temperature of from 50° C. to 350° C.; heating the bonded substrates at a maximum temperature of from 200° C. to 350° C.; and irradiating visible light from a sapphire substrate side or a semiconductor substrate side to the ion-implanted layer of the semiconductor substrate to make the interface of the ion-implanted layer brittle at a temperature of the bonded body higher than the temperature at which the surfaces were bonded, to transfer the semiconductor film to the sapphire substrate. | 2014-01-30 |
20140030871 | Trap Rich Layer with Through-Silicon-Vias in Semiconductor Devices - An integrated circuit chip is formed with a circuit layer, a trap rich layer and through-semiconductor-vias. The trap rich layer is formed above the circuit layer. The through-semiconductor-vias are also formed above the circuit layer. In some embodiments, the circuit layer is included in a wafer, and the trap rich layer and through-semiconductor-vias are included in another wafer. The two wafers are bonded together after formation of the trap rich layer and through-semiconductor-vias. Additionally, in some embodiments, yet another wafer may also be bonded to the wafer that includes the trap rich layer and through-semiconductor-vias. Furthermore, in some embodiments, another circuit layer may be formed in the wafer that includes the trap rich layer and through-semiconductor-vias. | 2014-01-30 |
20140030872 | NANO-STRUCTURE MANUFACTURING METHOD USING SACRIFICIAL ETCHING MASK - Disclosed is a nano-structure manufacturing method which includes: forming a first semiconductor composite layer, a semiconductor quantum structure layer, a second semiconductor composite layer, and a semiconductor quantum dot layer on a substrate in order; thermally treating the semiconductor quantum dot layer so that quantum dots of the semiconductor quantum dot layer are aggregated; and performing an etching process by using the aggregated quantum dots as a mask. | 2014-01-30 |
20140030873 | METHOD FOR FABRICATING PATTERNED SILICON NANOWIRE ARRAY AND SILICON MICROSTRUCTURE - A method for fabricating a patterned silicon nanowire array is disclosed. The method includes: forming a patterned protective layer on silicon nanowire array structures, forming a patterned protective layer on the array of silicon nanowire structures, the patterned protective layer defining a covered region and a uncovered region on the array of silicon nanowire structures; using a selective etching to remove the array of silicon nanowire structures defined on the uncovered region; and removing the patterned protective layer remained on the array of silicon nanowire structures. A method for fabricating a silicon microstructure is also disclosed. | 2014-01-30 |
20140030874 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a seed substrate made of silicon carbide; etching a main surface of the seed substrate prepared; obtaining an ingot by growing a silicon carbide single crystal film on a crystal growth surface formed by etching the main surface of the seed substrate; | 2014-01-30 |
20140030875 | METHOD FOR FORMING COMPOUND EPITAXIAL LAYER BY CHEMICAL BONDING AND EPITAXY PRODUCT MADE BY THE SAME METHOD - The present invention is to provide a method for forming a compound epitaxial layer by chemical bonding, which comprises the steps of forming a contact layer on a substrate; chemically reacting atoms on a surface of the contact layer with non-metal atoms, such that the non-metal atoms form non-metal ions for chemically bonding to the atoms on the surface of the contact layer; exciting the non-metal ions by energy excitation, such that unpaired electrons of the non-metal ions not yet bound to the atoms on the surface of the contact layer become dangling bonds; and conducting chemical vapor deposition by introducing an organic metal compound and a reactant gas, wherein metal ions of the organic metal compound are bound to the dangling bonds by electric dipole attraction, and anions of the reactant gas are bound to the metal ions by ionic bonding, such that the compound epitaxial layer is formed. | 2014-01-30 |
20140030876 | METHODS FOR FABRICATING HIGH CARRIER MOBILITY FINFET STRUCTURES - A method for fabricating an integrated circuit having a FinFET structure includes providing a semiconductor substrate comprising silicon and a high carrier mobility material, forming one or more fin structures on the semiconductor substrate, and subjecting the substrate to a condensation process for the condensation of the high carrier mobility material. The condensation process results in the formation of condensed fin structures formed substantially entirely of the high carrier mobility material and a layer of silicon oxide formed over the condensed fin structures. The method further includes removing the silicon oxide formed over the condensed fin structures so as to expose the condensed fin structures. | 2014-01-30 |
20140030877 | PROCESS TO DISSOLVE THE OXIDE LAYER IN THE PERIPHERAL RING OF A STRUCTURE OF SEMICONDUCTOR-ON-INSULATOR TYPE - A process for avoiding formation of a Si—SiO | 2014-01-30 |
20140030878 | METHOD OF MAKING LESS ELECTRIC CURRENT DEPENDENCE OF ELECTRIC CURRENT GAIN OF SEMICONDUCTOR DEVICE - An object of the present invention is to amplify the current which varies by a factor of several orders of magnitude with a constant gain without using a complicated circuit. In order to solve the problem, with a semiconductor device includes a first semiconductor region of a first conductivity, a second semiconductor region which is an opposite conductivity opposite to the first conductivity and is in contact with the first semiconductor region and a third semiconductor region which is the first conductivity and is in contact with the second semiconductor region at the second surface, a fourth semiconductor region in contact with the second semiconductor region is provided so as to be separated from the third semiconductor region and enclose the third semiconductor region and an impurity concentration of the fourth semiconductor region is larger than that of the second semiconductor region. | 2014-01-30 |
20140030879 | METHOD OF VAPOR-DIFFUSING IMPURITIES - A method of vapor-diffusing impurities into a diffusion region of a target substrate to be processed using a dummy substrate is provided. The method includes loading the target substrate and the dummy substrate in a substrate loading jig, accommodating the substrate loading jig loaded with the target substrate and the dummy substrate in a processing chamber of a processing apparatus, and vapor-diffusing impurities into the diffusion region of the target substrate in the processing chamber having the accommodated substrate loading jig. The vapor-diffused impurities are boron, an outer surface of the dummy substrate includes a material having properties not allowing boron adsorption. | 2014-01-30 |
20140030880 | Method of Semiconductor Integrated Circuit Fabrication - A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes receiving a semiconductor device. The method also includes forming a step-forming-hard-mask (SFHM) on the MG stack in a predetermined area on the semiconductor substrate, performing MG recessing, depositing a MG hard mask over the semiconductor substrate and recessing the MG hard mask to fully remove the MG hard mask from the MG stack in the predetermined area. | 2014-01-30 |
20140030881 | PHOTORESIST COMPOSITION, THIN FILM TRANSISTOR ARRAY PANEL, AND METHOD OF MANUFACTURING THE SAME - A positive photoresist composition including a novolac resin, a photo active compound (PAC), a melamine crosslinking agent, and a solvent. | 2014-01-30 |
20140030882 | MANUFACTURING METHOD OF MULTI-TRENCH TERMINATION STRUCTURE FOR SEMICONDUCTOR DEVICE - A multi-trench termination structure for semiconductor device is disclosed, where the semiconductor device includes a semiconductor substrate and an active structure region. The multi-trench termination structure includes multiple trenches defined on an exposed face of the semiconductor substrate, a first mask layer formed on a partial exposed surface of the semiconductor substrate and corresponding to a termination structure region of the semiconductor device, a gate insulation layer formed in the trenches, a conductive layer formed on the gate insulation layer and protruding out of the exposed surface of the semiconductor substrate, and a metal layer formed over the first mask layer and conductive layer on the termination structure region of the semiconductor device. | 2014-01-30 |
20140030883 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device comprises: a semiconductor substrate including an active region defined as a device isolation film; a bit line hole disposed over the top portion of the semiconductor substrate; an oxide film disposed at sidewalls of the bit line hole; and a bit line conductive layer buried in the bit line hole including the oxide film. A bit line spacer is formed with an oxide film, thereby reducing a parasitic capacitance. A storage node contact is formed to have a line type, thereby securing a patterning margin. A storage node contact plug is formed with polysilicon having a different concentration, thereby reducing leakage current. | 2014-01-30 |