05th week of 2014 patent applcation highlights part 15 |
Patent application number | Title | Published |
20140027681 | n-TYPE DOPED PbTe AND PbSe ALLOYS FOR THERMOELECTRIC APPLICATIONS - The present invention demonstrates that weak scattering of carriers leads to a high mobility and therefore helps achieve low electric resistivity with high Seebeck coefficient for a thermoelectric material. The inventors demonstrate this effect by obtaining a thermoelectric figure of merit, zT, higher than 1.3 at high temperatures in n-type PbSe, because of the weak scattering of carriers in the conduction band as compared with that in the valence band. The invention further demonstrates favorable thermoelectric transport properties of n-type PbTe | 2014-01-30 |
20140027682 | COLOR FILTER ARRAY HAVING HYBRID COLOR FILTERS AND MANUFACTURING METHOD THEREOF - A method for manufacturing a color filter array having hybrid color filters includes providing a high-grade photoresist and a low-grade photoresist, forming a plurality of first color filters on a substrate, and forming a plurality of second color filters and a plurality of third color filters on the substrate. The first color filters include the high-grade photoresist, and the second color filters and the third color filters include the low-grade photoresist. The high-grade photoresist of the first color filters includes a first amount of large size pigments in one unit area and the low-grade photoresists of the second color filters and the third color filters include a second amount of large size pigments in one unit area. A ratio of the second amount to the first amount is equal to or larger than | 2014-01-30 |
20140027683 | COLORED COMPOSITION, COLORED CURED FILM, COLOR FILTER, METHOD FOR PRODUCING COLOR FILTER, LIQUID CRYSTAL DISPLAY DEVICE, SOLID-STATE IMAGING DEVICE, AND NOVEL DIPYRROMETHENE METAL COMPLEX COMPOUND OR TAUTOMER THEREOF - A colored composition includes at least one selected from the group consisting of a compound represented by the following Formula (I) and a tautomer thereof: | 2014-01-30 |
20140027684 | PHOTOCHROMIC POLYMERS - A photochromic polymer comprising at least two photochromic moieties linked by a straight or branched chain polymer selected from the group consisting of a homo-polyester, a co-polyester, and a co-polyester-polyether. | 2014-01-30 |
20140027685 | NOVEL COMPOUND, NEAR-INFRARED ABSORBER, AND SYNTHETIC RESIN COMPOSITION CONTAINING SAME - The present invention provides a novel boron compound that has a maximum absorption wavelength in the near-infrared light range and has low absorption in the visible ray range, and thus is excellent as a near-infrared absorber, and a near-infrared absorber and a near-infrared absorbing synthetic resin composition using the compound. The present invention specifically provides a boron compound represented by the following general formula (1), preferably a boron compound wherein R | 2014-01-30 |
20140027686 | POLYCARBONATE RESIN COMPOSITION AND MOLDED ARTICLE THEREOF - A polycarbonate resin composition which has high light transmission performance in the visible light region, excellent infrared shielding properties and excellent resistance to molding heat, can contribute to the reduction of an environmental burden, and has such high designability that it can be tinted in various colors as well as a molded article thereof. | 2014-01-30 |
20140027687 | CONSTRUCTION STAPLE REMOVAL TOOL - A rod with termini that are used to remove construction staples, which are utilized in housing construction and electrical assemblies. Each terminus is J-shaped and is configured to pry a closed-end loop of a U-shaped construction staple so as to ease its removal. One terminus has a flatter profile to reach difficult spots where construction staples are located. The other terminus has a hook profile. | 2014-01-30 |
20140027688 | Deconstruction Pry Bar - Apparatus and method for prying up boards nailed to raised edges of support members, as in deconstruction of buildings, using a deconstruction pry bar having a relatively long shank extending upward from a fulcrum having a lateral axis, and a relatively short claw with at least one tang that extends downward from the fulcrum. Each tang is laterally offset relative to the fulcrum to enable a user to pry up boards by positioning the pry bar fulcrum for pivoting on top of the raised support member edge while the tang of the prying claw extends along a side of the support member, and then using lever action to convert a downward force on the shank to a greater upward force applied under the board by the claw tang. | 2014-01-30 |
20140027689 | Guide Member and a Method for Positioning a Cable into a Sewerage System - A guide member ( | 2014-01-30 |
20140027690 | LIGHTED TIP FOR FLEXIBLE RODS - In one aspect, a lighted tip for attachment to a flexible rod comprises a tip body having proximal and distal ends, a mechanical connector at the proximal end, a lens connected to the distal end, a light source that emits light through the lens, and a holder coupled to the light source and the lens. A circuit is completed or interrupted as the holder moves in relation to the tip body, thereby switching the light source on or off. In another aspect, a lighted tip for attachment to a flexible rod comprises a lens forming a distal end of the lighted tip. The lens is cylindrical over at least some of its length, and the tip further includes a light source at least partially within the cylindrical lens portion and a mechanical connector at a proximal end if the lighted tip, for connecting the tip to the flexible rod. | 2014-01-30 |
20140027691 | HOIST DRUM AND ROPE PULLEY FOR FIBER ROPE DRIVES - The present invention relates generally to rope drives working with high-strength fiber ropes such as crane hoists, boom adjustment gear, trolley traveling gear. etc. The invention in this respect in particular applies to hoist drums for the rope hoist winch of such a fiber rope drive having a drum jacket body which is provided with grooving at the peripheral side and having two guard plates adjacent to the drum jacket body at the end sides. The invention further relates to a rope pulley for such a fiber rope drive having a rotatably supported pulley body whose jacket surface has at least one rope groove. In accordance with the invention, the rope grooves have a flat-pressed, round groove contour which differs from the circular and which has a larger radius of curvature in the region of the groove base than in the region of the groove flanks adjacent thereto. | 2014-01-30 |
20140027692 | DEVICE FOR REMOVING HOPPERS FROM RAIL CARS - There is described a device for removing a drawer-type hopper of a railroad car, the device comprising: a first support base positioned on a platform and a second support base supported on the railroad car; and a tackle fastened on the first support base; the tackle comprising a first hook associated to the drawer-type hopper, the first hook and the drawer-type hopper being moved linearly by the tackle in the opposite direction of the railroad car. | 2014-01-30 |
20140027693 | SCISSOR LIFT APPARATUS - A lift for use in an autopsy, necropsy or pathology procedure comprises a base and a scissor lift connected to the base. A support member is connected to the scissor lift and a tray extraction device is aligned at a mid point of the support member. A console is attached to one end of the base and a steering and lifting arm extends from the console. The lift also comprises at least one outboard wheel arranged on an outer surface of the base and a pivoting steering wheel arranged below the console. | 2014-01-30 |
20140027694 | Winged Slat - A winged slat for a chain link fence having a front, a back, a first side, and a second side. A first wing or fin, which is not flexible and resilient, extends along and, in a substantially straight line, outward from any location other than a corner of the first side of the elongate body. A second wing or fin extends along and, in a substantially straight line, outward from any location other than a corner of the second side of the elongate body. Preferably the wings or fins extend the full length of the elongate body. The wings can be attached at any location to the side of the elongate body and can be at any angles to such sides. Furthermore, the two angles need not be the same. | 2014-01-30 |
20140027695 | ROCKFALL BARRIER - A rock fall barrier including a plurality of support posts and a deformable net spanning the plurality of support posts. Each support post includes: a base fixed to a sloped surface; a first arm pivotally coupled to the base at a first hinge; a first hinge brake for providing friction at the first hinge to provide controlled resistance against pivotal rotation of the first arm relative to the base; a second arm pivotally coupled to the first arm at a second hinge; and a second hinge brake for providing friction at the second hinge to provide controlled resistance against relative pivotal rotation between the first arm and the second arm. A guy wire system is attached to the distal end of each support post on one end and anchored to the sloped surface on the other end. The guy wire system includes upper guy wires having cable brakes. | 2014-01-30 |
20140027696 | SAFETY GUARD RAIL - An apparatus for forming a barrier along a perimeter of a roof being formed of a roof deck and a roof covering comprises an anchor plate having a plurality of fastener bores therethrough. The anchor plate is securable between the roof deck and the roof covering proximate to the perimeter of the roof. The apparatus also comprises an upright extending between top and bottom ends. The upright is pivotally securable to the anchor plate and the top end includes at least one connector for connecting a barrier member thereto. The apparatus further includes a brace extending from the bottom end of the upright to abut against an edge surface of the roof. | 2014-01-30 |
20140027697 | MAGNETIC RANDOM ACCESS MEMORY WITH SWITCHING ASSIST LAYER - A STTMRAM element includes a magnetization layer made of a first free layer and a second free layer, separated by a non-magnetic separation layer (NMSL), with the first and second free layers each having in-plane magnetizations that act on each other through anti-parallel coupling. The direction of the magnetization of the first and second free layers each is in-plane prior to the application of electrical current to the STTMRAM element and thereafter, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued to the STTMRAM element, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer. | 2014-01-30 |
20140027698 | NONVOLATILE MEMORY DEVICE - A nonvolatile memory device includes a first conductive unit, a second conductive unit, and a storage layer. The first conductive unit has a first work function. The second conductive unit has a second work function smaller than the first work function. The storage layer is provided between the first conductive unit and the second conductive unit. The storage layer is made using a source material including an aromatic diamine molecule and an aromatic tetracarboxylic dianhydride molecule. An ionization potential of the aromatic diamine molecule is greater than the first work function. An electron affinity of the aromatic tetracarboxylic dianhydride molecule is less than the second work function. | 2014-01-30 |
20140027699 | NONVOLATILE MEMORY DEVICE - A nonvolatile memory device includes a first conductive unit, a second conductive unit, and a storage layer. The storage layer is provided between the first conductive unit and the second conductive unit. The storage layer includes a polyimide film and a plurality of micro particles dispersed in the polyimide film. The polyimide film includes a first polyimide made using a first source material including at least a first aromatic diamine molecule and a first aromatic tetracarboxylic dianhydride molecule. The micro particles include at least one selected from a metal atom, a metal ion, a second polyimide, a third polyimide, a first organic molecule, a second organic molecule, and an inorganic compound. | 2014-01-30 |
20140027700 | MEMRISTOR WITH EMBEDDED SWITCHING LAYER - A method of making a memristor having an embedded switching layer include exposing a surface portion of a first electrode material within a via to a reactive species to form the switching layer embedded within and at surface of the via. The via is in contact with a first conductor trace. The method further includes depositing a layer of a second electrode material adjacent to the via surface and patterning the layer into a column aligned with the via. The method further includes depositing an interlayer dielectric material to surround the column and providing a second conductor trace in electrical contact with the second electrode material of the column. | 2014-01-30 |
20140027701 | VARIABLE RESISTANCE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A variable resistance memory device includes a plurality of first conductive lines extended in a first direction, a plurality of second conductive lines arranged over or under the first conductive lines and extended in a second direction crossing the first direction, an insulating layer disposed between the first conductive lines and the second conductive lines and having a trench extended in the second direction and defined by a first side wall and a second sidewall facing each other and a bottom surface connecting the first sidewall and the second sidewall, and a variable resistance material layer formed on the first and second sidewalls and the bottom surface of the trench, wherein the first and second sidewalls of the trench overlap two adjacent second conductive lines, respectively. | 2014-01-30 |
20140027702 | MULTIFUNCTIONAL ZINC OXIDE NANO-STRUCTURE-BASED CIRCUIT BUILDING BLOCKS FOR RE-CONFIGURABLE ELECTRONICS AND OPTOELECTRONICS - A vertically integrated reconfigurable and programmable diode/memory resistor (1D1R) and thin film transistor/memory resistor (1T1R) structures built on substrates are disclosed. | 2014-01-30 |
20140027703 | VARIABLE RESISTIVE ELEMENT, AND ITS MANUFACTURING METHOD - A variable resistive element comprising a configuration that an area of an electrically contributing region of a variable resistor body is finer than that constrained by an upper electrode or a lower electrode and its manufacturing method are provided. A bump electrode material is formed on a lower electrode arranged on a base substrate. The bump electrode material is contacted to a variable resistor body at a surface different from a contact surface to the lower electrode. The variable resistor body is contacted to an upper electrode at a surface different from a contact surface to the bump electrode material. Thus, a cross point region between the bump electrode material (the variable resistor body) and the upper electrode becomes an electrically contributing region of the variable resistor body, and then an area thereof can be reduced compared with that of the region regarding the conventional variable resistive element. | 2014-01-30 |
20140027704 | METHODS OF FORMING PHASE-CHANGE MEMORY DEVICES AND DEVICES SO FORMED - Phase-change memory devices are provided. A phase-change memory device may include a substrate and a conductive region on the substrate. Moreover, the phase-change memory device may include a lower electrode on the conductive region. The lower electrode may include a metal silicide layer on the conductive region, and a metal silicon nitride layer including a resistivity of about 10 to about 100 times that of the metal silicide layer. Moreover, the lower electrode may include a metal oxide layer between the metal silicon nitride layer and the metal silicide layer. The metal oxide layer may include a resistivity that is greater than that of the metal silicide layer and less than the resistivity of the metal silicon nitride layer. The phase-change memory device may also include a phase-change layer and an upper electrode on the lower electrode. | 2014-01-30 |
20140027705 | MEMRISTOR CELL STRUCTURES FOR HIGH DENSITY ARRAYS - A memristor array includes a lower layer of crossbars, upper layer of crossbars intersecting the lower layer of crossbars, memristor cells interposed between intersecting crossbars, and pores separating adjacent memristor cells. A method forming a memristor array is also provided. | 2014-01-30 |
20140027706 | SWITCHING DEVICE AND OPERATING METHOD FOR THE SAME AND MEMORY ARRAY - A switching device and an operating method for the same and a memory array are provided. The switching device comprises a first solid electrolyte, a second solid electrolyte and a switching layer. The switching layer is adjoined between the first solid electrolyte and the second solid electrolyte. | 2014-01-30 |
20140027707 | MEMORY DEVICE AND FABRICATING METHOD THEREOF - According to one embodiment, a memory device includes first interconnects, second interconnects, and a first memory cell. The first memory cell is located in an intersection of one of the first interconnects and one of the second interconnects. The first memory cell includes a first multilayer structure and a first variable resistance layer, the first multilayer structure including a first electrode, a first selector, and a first insulator which are stacked. The first selector and the first variable resistance layer are electrically connected in series between the one of the first interconnect and the one of the second interconnect. The first variable resistance layer is formed on a portion of a side surface of the first insulator to cover the portion without covering a residual portion. | 2014-01-30 |
20140027708 | PHOTONIC INTEGRATED CIRCUITS BASED ON QUANTUM CASCADE STRUCTURES - Photonic integrated circuits (PICs) are based on quantum cascade (QC) structures. In embodiment methods and corresponding devices, a QC layer in a wave confinement region of an integrated multi-layer semiconductor structure capable of producing optical gain is depleted of free charge carriers to create a low-loss optical wave confinement region in a portion of the structure. Ion implantation may be used to create energetically deep trap levels to trap free charge carriers. Other embodiments include modifying a region of a passive, depleted QC structure to produce an active region capable of optical gain. Gain or loss may also be modified by partially depleting or enhancing free charge carrier density. QC lasers and amplifiers may be integrated monolithically with each other or with passive waveguides and other passive devices in a self-aligned manner. Embodiments overcome challenges of high cost, complex fabrication, and coupling loss involved with material re-growth methods. | 2014-01-30 |
20140027709 | METHOD AND STRUCTURE FOR RECEIVING A MICRO DEVICE - A method and structure for receiving a micro device on a receiving substrate are disclosed. A micro device such as a micro LED device is punched-through a passivation layer covering a conductive layer on the receiving substrate, and the passivation layer is hardened. In an embodiment the micro LED device is punched-through a B-staged thermoset material. In an embodiment the micro LED device is punched-through a thermoplastic material. | 2014-01-30 |
20140027710 | QUANTUM DOT AND NANOWIRE SYNTHESIS - A self-assembled semiconductor nanostructure includes a core and a shell, wherein one of the core or the shell is rich in a strained component and the other of the core or the shell is rich in an unstrained component, wherein the nanostructure is a quantum dot or a nanowire. A method includes growing a semiconductor alloy structure on a substrate using a growth mode that produces a semiconductor alloy structure having a self-assembled core and shell and allowing the structure to equilibrate such that one of the core or the shell is strained and the other is unstrained. Another method includes growing at least one semiconductor alloy nanostructures on a substrate, wherein the nanostructure comprises a strained component and an unstrained component, and controlling a compositional profile during said growing such that a transition between the strained component and an unstrained component is substantially continuous. | 2014-01-30 |
20140027711 | QUANTUM DOTS, METHOD, AND DEVICES - A quantum dot including a fluorine-containing ligand attached to a surface thereof and having a coating comprising a fluoropolymer over at least a portion of the outer surface of the quantum dot. A method for preparing a quantum dot with a coating comprising a fluoropolymer over at least a portion of the outer surface of the quantum dot is also disclosed. The method comprises contacting a quantum dot having a fluorine-containing ligand attached to a surface thereof with a fluoropolymer to coat the fluoropolymer over at least a portion of the outer surface of the quantum dot. A device including the quantum dot taught herein is further disclosed. An emissive material including the quantum dot taught herein is further disclosed. | 2014-01-30 |
20140027712 | DEVICES INCLUDING QUANTUM DOTS AND METHOD - A method for preparing a device, the method comprising: forming a first device layer over a first electrode, the layer comprising a metal oxide formed from a sol-gel composition that does not generate acidic by-products, and forming a second electrode over the first device layer, wherein the method further includes forming a layer comprising quantum dots over the first electrode before or after formation of the first device layer. Also disclosed is a device comprising a first device layer formed over a first electrode, the first device layer comprising a metal oxide formed by sol-gel processing that does not include acidic by-products, a second electrode over the first device layer, and a layer comprising quantum dots disposed between the first device layer and one of the two electrodes. A device prepared by the method is also disclosed. | 2014-01-30 |
20140027713 | DEVICE INCLUDING QUANTUM DOTS - A method for making a device, the method comprising: depositing a layer comprising quantum dots over a first electrode, the quantum dots including ligands attached to the outer surfaces thereof; treating the surface of the deposited layer comprising quantum dots to remove the exposed ligands; and forming a device layer thereover. Also disclosed is a device made in accordance with the disclosed method. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, and a layer comprising quantum dots between the two electrodes, the layer comprising quantum dots deposited from a dispersion that have been treated to remove exposed ligands after formation of the layer in the device. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, a layer comprising a first inorganic semiconductor material disposed between the first and second electrodes, and a plurality of quantum dots disposed between the first and second electrodes, the outer surface of the quantum dots comprising a second inorganic semiconductor material, wherein the composition of the first inorganic semiconductor material and the second inorganic semiconductor material is the same (without regard to any ligands on the outer surface of the quantum dot). | 2014-01-30 |
20140027714 | QUANTUM WELL THERMOELECTRIC COMPONENT FOR USE IN A THERMOELECTRIC DEVICE - A quantum well thermoelectric component for use in a thermoelectric device based on the thermoelectric effect,
| 2014-01-30 |
20140027715 | P-TYPE GRAPHENE BASE TRANSISTOR - A hot hole transistor with a graphene base comprises on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer. | 2014-01-30 |
20140027716 | HETEROLEPTIC CYCLOMETALLATED IR(III) COMPLEXES HAVING A CYCLOMETALLATED 6-MEMBERED RING - Heteroleptic cyclometallated complexes having a 6-membered ring cyclometallated to the metal, as shown in Formula (I), are provided: | 2014-01-30 |
20140027717 | PIXEL CONTROL STRUCTURE, ARRAY, BACKPLANE, DISPLAY, AND METHOD OF MANUFACTURING - Pixel control structure for use in a backplane for an electronic display, including a transistor that has a gate, a source, a drain, and an organic semiconductor element. The pixel control structure is formed by a first patterned conductive layer portion, a second patterned conductive layer portion, a dielectric layer portion, and an organic patterned semiconductive layer portion. The dielectric layer portion comprises an overlap region defined by overlap of the second conductive layer portion over the first conductive layer portion. The overlap region defines an overlap boundary, defined by an edge portion of the first patterned conductive layer portion and an edge portion of the second patterned conductive layer portion. The patterned semiconductive layer portion extends over the overlap region and away from the overlap region so as to extend from both first and second edge portions. | 2014-01-30 |
20140027718 | OLED DEVICE - An OLED device comprises an anode, a hole transport layer, a luminance layer, an electron transport layer and a cathode. Molecules of film materials of forming the carrier transport layer all stand upright on the electrodes. A long axis of the molecule is perpendicular to the electrodes. There forms vertical conjugated planes between the molecules of each molecule layer in the film. These conjugated planes are parallel to each other and perpendicular to the electrodes. Therefore, the carrier transportation of the OLED device of the present invention mainly relies on the conjugated bonds in the molecules, but not the transition between the molecules, thereby efficiently improving the carrier mobility, reducing the working pressure and the power consumption of the OLED device, and improving the performance of the OLED device. | 2014-01-30 |
20140027719 | PIXEL AND ORGANIC LIGHT EMITTING DISPLAY DEVICE USING THE SAME - A pixel includes an organic light emitting diode, a first transistor that controls an amount of current supplied to the organic light emitting diode, a second transistor connected between a gate electrode of the first transistor and an initialization power supply, and a third transistor diode-connected between an anode electrode of the organic light emitting diode and the initialization power supply. | 2014-01-30 |
20140027720 | Organic Light-Emitting Display Device and Method of Manufacturing the Same - An organic light-emitting display device and a method of manufacturing the same. The organic light-emitting display device includes: an active layer that is formed by patterning a semiconductor layer formed by laser crystallization; a gate electrode that is disposed to correspond to a channel area of the active layer; a first insulating layer that is disposed between the active layer and the gate electrode; a second insulating layer that is disposed on the gate electrode; and first test patterns that are formed on the second insulating layer and contact source and drain regions of the active layer and the gate electrode, respectively. | 2014-01-30 |
20140027721 | CONDENSED-CYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - Embodiments of the invention are directed to a condensed-cyclic compound represented by Formula 1, and to an organic light-emitting device including the condensed-cyclic compound. | 2014-01-30 |
20140027722 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus including a substrate; an organic light-emitting device formed on the substrate; a thin film encapsulation layer that is formed on the organic light-emitting device and covers the organic light-emitting device; and a barrier layer disposed between the organic light-emitting device and the thin film encapsulation layer, in which the barrier layer includes a first barrier layer formed on the organic light-emitting device and including an alkali metal-containing compound; and a second barrier layer disposed between the first barrier layer and the thin film encapsulation layer and including an amorphous inorganic oxide. | 2014-01-30 |
20140027723 | ORGANIC LIGHT EMITTING DEVICE INCLUDING COMPOUNDS - In one aspect, an organic light-emitting device including an anthracene-base compound and an indenophenanthrene-base compound is provided. | 2014-01-30 |
20140027724 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - An organic light emitting display device including: a substrate; a plurality of first electrodes formed over the substrate; a pixel defining layer (PDL) formed over the substrate, and separating the plurality of first electrodes from one another when viewed in a thickness direction of the display device; a plurality of light emitting layer portions, each of which is formed over one of the plurality of first electrodes; at least a second electrode formed over the plurality of light emitting layer portions; and a filter unit formed over the at least a second electrode. The filter unit includes a black matrix layer having an opening and a plurality of color filters formed over the black matrix layer, and each color filter comprising at least one embossed portion formed over one of the plurality of openings. | 2014-01-30 |
20140027725 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - An organic light emitting display device including: a substrate; a plurality of first electrodes formed over the substrate; a pixel defining layer (PDL) formed over the substrate, and separating the plurality of first electrodes from one another when viewed in a thickness direction of the display device; a plurality of light emitting layer portions formed over one of the plurality of first electrodes; at least a second electrode formed over the plurality of light emitting layer portions; and a filter unit formed over the at least a second electrode. The filter unit includes a black matrix layer defining a plurality of openings, an organic layer formed over the black matrix layer and the plurality of openings, and comprising a plurality of lens-shaped embossed portions, and a plurality of color filters formed over the organic layer. | 2014-01-30 |
20140027726 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device having an improved manufacturing procedure and an improved emission efficiency, and a method of manufacturing the organic light-emitting display device. | 2014-01-30 |
20140027727 | ORGANIC LIGHT EMITTING DEVICES AND METHODS OF FABRICATING THE SAME - Disclosed are organic light emitting devices and methods of fabricating the same. The organic light emitting device may include light scattering parts having irregular island-shapes irregularly arranged. The organic light emitting device may further include a planarization layer, a first electrode, an organic light emitting layer, a second electrode, and an encapsulation layer. The light scattering parts may be formed using an organic solution having a low refractive index to improve light extraction efficiency of the organic light emitting device. Additionally, the light scattering parts of the irregular island-shapes may improve the light extraction efficiency of lights of all wavelengths, so as to be applied to an organic white light emitting device. The light scattering parts of the irregular island-shapes may be formed using the organic solution by a dewetting phenomenon. The light scattering parts may be formed at a temperature of about 250 degrees Celsius or less. | 2014-01-30 |
20140027728 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF - An organic light emitting diode display includes a substrate, a scan line formed on the substrate and transferring a scan signal, a data line and a driving voltage line crossing the scan line and transferring a data signal and a driving voltage, respectively, a switching thin film transistor connected to the scan line and the data line, a driving thin film transistor connected to the switching thin film transistor and the driving voltage line, and an organic light emitting diode connected to the driving thin film transistor. The driving thin film transistor includes a driving semiconductor layer, a first gate insulating layer covering the driving semiconductor layer, a floating gate electrode formed on the first gate insulating layer, a second gate insulating layer, and a driving gate electrode formed on the second gate insulating layer. | 2014-01-30 |
20140027729 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF - An OLED display includes: pixel electrodes electrically connected to a thin film transistor on a substrate; a pixel defining portion including a pixel defining layer surrounding the respective pixel electrodes to define an individual pixel area, and a spacer protruding from the pixel defining layer; and a sealing substrate bonded to the substrate while maintaining a distance to the substrate by the spacer. An opaque deposition material is formed on the pixel defining portion, excluding one surface of the spacer that faces the sealing substrate, and on the pixel electrodes. | 2014-01-30 |
20140027730 | Microelectronic Device with Integrated Energy Source - An apparatus including an electronic device having a plurality of substantially collocated components, the plurality of components including an integrated circuit (IC) chip, an energy supply operable to electrically power the IC chip, and an energy harvesting (EH) device operable to convert non-electrical energy to electrical energy supplied to the energy supply. A material substantially encloses at least a portion of at least one of the IC chip, the energy supply, and the EH device. | 2014-01-30 |
20140027731 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF - Disclosed are an organic light emitting diode display and a manufacturing method thereof, and more particularly, an organic light emitting diode display capable of minimizing resistance increase of a second electrode and improving light extraction efficiency at the same time by forming a separate reflector, and a manufacturing method thereof | 2014-01-30 |
20140027732 | ORGANIC LIGHT-EMITTING DEVICE AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THE SAME - An organic light-emitting device and an organic light-emitting display apparatus including the same are provided. The organic light-emitting device comprises pixels, each pixel comprising three sub-pixels, each sub-pixel comprising a layered structure, the individual layers comprising organic compounds. The layered structure can comprise organic light emission layers, resonance auxiliary layers that provide a thickness allowing the establishment of microcavity effects that increase luminance, and layers that facilitate electron transfer between the electrodes and the organic emission layers, such as doping auxiliary layers, hole injection layers, hole transport layers, electron injection layers and electron transport layers. | 2014-01-30 |
20140027733 | TRANSITION METAL COMPLEXES CONTAINING SUBSTITUTED IMIDAZOLE CARBENE AS LIGANDS AND THEIR APPLICATION IN OLEDS - Compounds having a metal M complexed to a ligand L containing a substituted imidazole carbene group, which is represented Formula (I), below: | 2014-01-30 |
20140027734 | BORON-NITROGEN POLYAROMATIC COMPOUNDS AND THEIR USE IN OLEDS - Boron-nitrogen polyaromatic compounds having a fused aromatic ring system are provided, where the compounds include a [1,2]azaborino[1,2-a][1,2]azaborine | 2014-01-30 |
20140027735 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF - Disclosed are an organic light emitting diode display and a manufacturing method thereof, and more particularly, an organic light emitting diode display and a manufacturing method thereof, that improve light extraction efficiency by forming a light controlling layer formed in a multilayer having different refractive indexes so that light is not absorbed in a pixel defining layer but reflected to the front side due to a refractive index difference. | 2014-01-30 |
20140027736 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device and a method of manufacturing the same. The organic light-emitting display device includes: a substrate; an active layer on the substrate; a gate electrode insulated from the active layer and overlapping the active layer; a source electrode including a first source electrode layer connected to the active layer and a second source electrode layer connected to the first source electrode layer and being larger than the first source electrode layer; a drain electrode including a first drain electrode layer connected to the active layer and a second drain electrode layer connected to the first drain electrode layer and being larger than the first drain electrode layer; a first electrode electrically connected to the source electrode or the drain electrode; an intermediate layer on the first electrode and including an organic emission layer; and a second electrode on the intermediate layer. | 2014-01-30 |
20140027737 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF - An organic light emitting diode display includes a substrate including a display region displaying an image and a peripheral region surrounding the display region, a plurality of pad wires formed in the peripheral region of the substrate, and a plurality of bumps formed between the plurality of pad wires. The organic light emitting diode display blocks or relieves impact which is generated when a temporary upper protective film is half-cut and applied to a plurality of pad wires or an insulating layer by forming a plurality of bumps between the plurality of pad wires, thus preventing a damage to the pad wires or the insulating layer. | 2014-01-30 |
20140027738 | WIRE GRID TYPE POLARIZATION STRUCTURES, METHODS OF MANUFACTURING WIRE GRID TYPE POLARIZATION STRUCTURES, AND ORGANIC LIGHT EMITTING DIODE (OLED) DISPLAYS HAVING WIRE GRID TYPE POLARIZATION STRUCTURES - A wire grid type polarization structure is disclosed. In one aspect, the polarization structure includes a retardation layer and a plurality of nanowires formed on the retardation layer. Each of the nanowires includes a wire core and a shell enclosing the wire core. The wire cores include metal nanoparticles embedded therein. The metal nanoparticles may absorb the visible lights effectively, so that the wire grid type polarization structure may have a desired polarization characteristic. | 2014-01-30 |
20140027739 | Multilayered Protective Layer, Organic Opto-Electric Device and Method of Manufacturing the Same - An organic opto-electric device is disclosed comprising an opto-electric element and a protective enclosure for protecting the opto-electric element against atmospheric substances. The protective enclosure comprises a multi-layered protective layer in which a first inorganic layer, a first organic layer comprising a getter, a second organic layer free from getter material and a second inorganic layer are stacked in the order named, wherein the first and the second inorganic layer encapsulate the first and the second organic layer. The getter is distributed in the first organic layer a nanometer sized particles and the second organic layer has a thickness of at least 10 μm. | 2014-01-30 |
20140027740 | LUMINAIRE AND INDIVIDUALLY REPLACEABLE COMPONENTS - Luminaires and luminaire components are provided that may include emissive, index-matching, and/or outcoupling components that are replaceable separately from other components of the luminaire. In some embodiments, an index-matching component may include a gel sheet or pad that can be disposed between an emissive component and an outcoupling component. The index-matching component may be replaceable separately from the emissive and outcoupling components. In some embodiments, an emissive component including an OLED panel and/or an index-matching component may be replaceable separately from other components of the luminaire. | 2014-01-30 |
20140027741 | HETEROCYCLIC COMPOUNDS AND ORGANIC LIGHT-EMITTING DEVICES INCLUDING THE SAME - Heterocyclic compounds, synthetic methods for preparing the same, and organic light-emitting display devices comprising the same are described. The subject heterocyclic compounds may comprise an aromatic ring or a heteroaromatic ring fused with a carbazole, dibenzothiophene, or dibenzofurane derivative, the compounds featuring rigid backbone structures with high glass transition temperatures and high melting points. The subject heterocyclic compounds may exhibit high electrical stability, improved charge transport ability, high heat resistance and improved light-emitting properties when used in organic light-emitting devices. Organic light-emitting display devices prepared according to the present invention exhibit lower driving voltages, increased luminescent efficiencies and longer lifetimes. | 2014-01-30 |
20140027742 | OLED Unit, Method for Making the Same, and OLED Illuminating Device Comprising the Same - A method for producing an organic light emitting diode (OLED) unit includes: (a) forming an electrode pad on a substrate; (b) forming an insulating layer to cover and to partially expose the electrode pad; (c) forming an electrically conductive oxide layer on the insulating layer in such a manner that the exposed electrode pad is covered by and electrically coupled to the electrically conductive oxide layer; and (d) forming an organic illuminating multilayer structure on the substrate, the organic illuminating multilayer structure including an inner electrode that is electrically coupled to the electrode pad. | 2014-01-30 |
20140027743 | Sealing Structure and Organic Electroluminescence Device - A sealing structure with high air-tightness and an organic electroluminescence device with high air-tightness are provided regardless of a pattern of a first metal layer overlapping with glass frit. A second metal layer is provided in a region where a common power supply line overlaps with the glass frit. Since laser light is absorbed or reflected by the second metal layer, the glass frit can be uniformly heated. Therefore, an object to be sealed can be sealed with a low-melting-point glass in which a crack is not easily generated. | 2014-01-30 |
20140027744 | ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device including two or more organic thin film layers including an emitting layer between an anode and a cathode,
| 2014-01-30 |
20140027745 | BLENDED POLYMER FETS - A method for forming a semiconductor body, the method comprising: forming a mixture of an organic semiconducting material and a binder material; causing the semiconducting material to at least partially solidify; and causing the binder material to crystallize in such a way as to cause the semiconducting material to at least partially segregate from the binder material. | 2014-01-30 |
20140027746 | STAR-SHAPED COMPOUNDS FOR ORGANIC SOLAR CELLS - The present invention relates to compounds of the general formula (I) The present invention also relates to a process for the preparation of such compounds, the compounds obtainable by this process, the use of these compounds, semiconducting layers and electronic components. | 2014-01-30 |
20140027747 | COMPOUND, ORGANIC ELECTRONIC ELEMENT USING SAME, AND ELECTRONIC DEVICE USING THE LATTER - The present invention relates to a compound, which is represented by one chemical formula among the chemical formulas (1) to (3), an organic electronic element comprising the compound, and an electronic device comprising the organic electronic element. The compound is characterized by comprising at least one phenyl group having at least one substitution with deuterium or tritium. | 2014-01-30 |
20140027748 | ORGANIC ELECTROLUMINESCENCE DEVICE AND METHOD OF FABRICATING THE SAME - An organic EL device includes: a reflective electrode; a transparent electrode opposite the reflective electrode; an organic layer including a light-emitting layer between the reflective electrode and transparent electrode; and a low refractive index layer between the reflective electrode and light-emitting layer. The low refractive index layer has a function of transporting/injecting electrons/holes, and has a lower refractive index than the light-emitting layer. Distance between the surface of the reflective electrode and a central light-emitting position of the light-emitting layer is 300 nm or less. Furthermore, Δn×d/λ≦−0.009 and Δn×d/λ≦−0.02 are satisfied when the reflective electrode comprises Al and Ag, respectively, where: λ denotes the central light-emitting wavelength of light generated in the light-emitting layer; Δn denotes the refractive index difference between the low refractive index layer and the light-emitting layer, with the refractive index of the light-emitting layer as reference; and d denotes the thickness of the low refractive index layer. | 2014-01-30 |
20140027749 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE USING THE SAME - An organic light-emitting device includes an anode, a cathode, and an organic compound layer interposed between the anode and the cathode. The organic compound layer contains a heterocyclic compound having 4,10-Diazachrysene. | 2014-01-30 |
20140027750 | COMPOUND FOR ORGANIC OPTOELECTRONIC DEVICE, ORGANIC LIGHT EMITTING DIODE INCLUDING THE SAME AND DISPLAY INCLUDING THE ORGANIC LIGHT EMITTING DIODE - A compound for an organic optoelectronic device, an organic light emitting diode including the same, and a display device including the organic light emitting diode, the compound being represented by the following Chemical Formula 1: | 2014-01-30 |
20140027751 | ORGANIC ELECTROLUMINESCENT ELEMENT ANF LIGHTING DEVICE - An organic electroluminescent element that emits white light by energization may include a pair of electrodes; and two light-emitting layers provided between the electrodes, each of the light-emitting layers including a host material and a phosphorescence-emitting dopant. The host materials included in the respective light-emitting layers may be different from each other, at least one of the phosphorescence-emitting dopants included in the respective light-emitting layers may be a blue phosphorescence-emitting dopant having an ionization potential (Ip) of 5.3 eV or less, and at least one of the two light-emitting layers may include a plurality of the phosphorescence-emitting dopants. | 2014-01-30 |
20140027752 | METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR ELEMENT, AND ORGANIC SEMICONDUCTOR ELEMENT - A method for manufacturing an organic semiconductor element capable of obtaining an organic semiconductor element in which an organic semiconductor layer is patterned without lowering the mobility of the organic semiconductor layer through a simple and easy process, which includes: an organic semiconductor layer formation step; a first dielectric layer formation step of forming a first dielectric layer on the organic semiconductor layer to be positioned at least on a channel region between the source electrode and the drain electrode; and a second dielectric layer formation step, wherein the second dielectric layer has a contact portion contacting the organic semiconductor layer around the first dielectric layer, and a mixed layer in which the organic semiconductor layer and the second dielectric layer are mixed with each other is formed to constitute an interface between the organic semiconductor layer and the second dielectric layer in the contact portion. | 2014-01-30 |
20140027753 | ORGANIC ELECTROLUMINESCENCE ELEMENT - Provided is a highly-reliable organic electroluminescence element in which loss of light due to surface plasmons generated on a metal surface is suppressed, the efficiency of light extraction to outside the element, and short circuits are unlikely to occur. The organic electroluminescence element includes a metal layer ( | 2014-01-30 |
20140027754 | LIGHT EMITTING DEVICE MATERIAL AND LIGHT EMITTING DEVICE - The present invention provides a light emitting device material containing a compound having a specific pyrene structure, capable of providing an organic thin-film light emitting device which enables high-efficiency light emission and low-voltage driving, and is also excellent in durability; and a light emitting device using the same. | 2014-01-30 |
20140027755 | MATERIALS FOR ELECTRONIC DEVICES - The present invention relates to an electronic device comprising one or more compounds of a formula (I) or (II). Furthermore, the invention encompasses the use of a compound of the formula (I) or (II) in an electronic device, and the provision of certain compounds of the formula (I) or (II). | 2014-01-30 |
20140027756 | ORGANIC ELECTROLUMINESCENCE ELEMENT - The organic electroluminescence element in accordance with the present invention includes: a light-emitting layer; a first electrode layer on a first surface in a thickness direction of the light-emitting layer; a second electrode layer on a second surface in the thickness direction of the light-emitting layer; an electrically conductive layer; and an insulating layer. The light-emitting layer is configured to emit light when a predetermined voltage is applied between the first and second electrode layers. The second electrode layer includes an electrode part covering the second surface and an opening part formed in the electrode part to expose the second surface. The electrically conductive layer is designed to allow the light to pass therethrough, and is interposed between the second surface and the second electrode layer to cover the second surface. The insulating layer is interposed between the second surface and the electrically conductive layer to overlap the electrode part. | 2014-01-30 |
20140027757 | NOVEL SPIRO COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE HAVING THE SAME - The present invention provides a novel stable organic compound and also provides an organic light-emitting device having a high luminous efficiency and a low driving voltage. The present invention relates to a spiro compound represented by the following Formula [1]: | 2014-01-30 |
20140027758 | MULTI-GATE THIN-FILM TRANSISTOR - This disclosure provides implementations of multi-gate transistors, structures, devices, apparatus, systems, and related processes. In one aspect, a device includes a thin-film semiconducting layer arranged over a substrate. A drain and source are coupled to the semiconducting layer. The device also includes first, second and third gates all arranged adjacent the semiconducting layer and configured to receive first, second, and third control signals, respectively. Dielectric layers insulate the gates from the semiconducting layer and from one another. In a first mode, the first, second, and third gates are configured such that charge is stored in a potential well in a region of the semiconducting layer adjacent the second gate. In a second mode, the first, second and third gate electrodes are configured such that the stored charge is transferred through the region of the semiconducting layer adjacent the third gate electrode and through the source to a load. | 2014-01-30 |
20140027759 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device according to an exemplary embodiment of the present invention includes a semiconductor layer; a data line disposed on the semiconductor layer, and a source electrode as well as a drain electrode disposed on the semiconductor layer and facing the source electrode. The semiconductor layer is made of an oxide semiconductor including indium, tin, and zinc. An atomic percent of indium in the oxide semiconductor is equal to or larger than about 10 at % and equal to or smaller than about 90 at %, an atomic percent of zinc in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 60 at %, and an atomic percent of tin in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 45 at %, and the data line and the drain electrode comprise copper. | 2014-01-30 |
20140027760 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device and manufacturing method thereof are provided. The manufacturing method of the semiconductor device includes sequentially forming a gate electrode, a gate insulating layer, an oxide semiconductor layer and an etching stop layer on a substrate. The etching stop layer has two contact openings exposing a portion of the oxide semiconductor layer. A metal layer is formed on the etching stop layer, and connected with the oxide semiconductor layer via the contact openings. A half-tone patterned photoresist layer is formed on the metal layer, and is taken as an etching mask to remove the metal layer and the etching stop layer. A thickness of the half-tone patterned photoresist layer is reduced until a second portion of the half-tone patterned photoresist layer is removed, such that a patterned photoresist layer is formed as an etching mask for removing the metal layer and the oxide semiconductor layer. | 2014-01-30 |
20140027761 | THIN FILM TRANSISTOR SUBSTRATE, DISPLAY THEREOF AND MANUFACTURING METHOD THEREOF - A thin film transistor substrate includes a substrate and a plurality of thin film transistors. The thin film transistor includes a first electrode layer, a first insulating layer, an oxide semiconductor layer, a second electrode layer and a second insulating layer. The first electrode layer with gate portions is formed on the substrate. The first insulating layer covers the first electrode layer. The oxide semiconductor layer is formed on the first insulating layer, and the oxide semiconductor layer comprises a first boundary. The second electrode layer with drain portions and source portions is formed on the oxide semiconductor layer, wherein the drain portion and the corresponding source are corresponding gate portion, and the drain portion comprises a second boundary. The second insulating layer covers the oxide semiconductor layer and the second electrode layer. The second boundary is within the first boundary. The second electrode layer includes copper. | 2014-01-30 |
20140027762 | SEMICONDUCTOR DEVICE - A semiconductor device is provided, which includes a first oxide semiconductor layer over a substrate, a second oxide semiconductor layer over and in contact the first oxide semiconductor layer, a source electrode and a drain electrode over the second oxide semiconductor layer, a gate insulating layer over the second oxide semiconductor layer, and a gate electrode over the gate insulating layer. The first oxide semiconductor layer has a step portion. The step portion is thinner than a portion other than the step portion. A surface of the step portion is in contact with the source electrode and the drain electrode. | 2014-01-30 |
20140027763 | THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE HAVING THE THIN FILM TRANSISTOR SUBSTRATE - A thin film transistor substrate includes a substrate, a gate, a gate insulating layer, a semiconductor layer, a source, a drain and a light-blocking layer. The gate is disposed on the substrate. The gate insulating layer is disposed on the gate. The semiconductor layer is disposed on the gate insulating layer. The source and the drain are disposed on the semiconductor layer with an interval therebetween. The light-blocking layer is disposed on the interval. The semiconductor layer includes an oxide semiconductor. In addition, a display device is also disclosed. | 2014-01-30 |
20140027764 | SEMICONDUCTOR DEVICE - A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor. | 2014-01-30 |
20140027765 | SEQUENTIAL CIRCUIT AND SEMICONDUCTOR DEVICE - A highly reliable semiconductor device in which a shift in the threshold voltage of a transistor due to deterioration is prevented is provided. The semiconductor device is formed using a sequential circuit including: a first transistor controlling the electrical connection between a first wiring and a second wiring; a second transistor and a third transistor in each of which a source and a drain are electrically connected to each other and which control the electrical connection between the second wiring and a third wiring; and a switch group controlling the electrical connection between a gate of the first transistor and the third wiring or a fourth wiring, the electrical connection between a gate of the second transistor and the third wiring or the fourth wiring, and the electrical connection between a gate of the third transistor and the third wiring or the fourth wiring in response to a control signal. | 2014-01-30 |
20140027766 | METHOD FOR PRODUCING P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAYER, METHOD FOR PRODUCING ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR SINGLE CRYSTAL LAYER, ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, AND N-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAMINATE STRUCTURE - A method for producing a p-type ZnO based compound semiconductor layer is provided. The method comprises the steps of (a) preparing an n-type single crystal ZnO based compound semiconductor structure containing a Group 11 element which is Cu and/or Ag and at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and (b) annealing the n-type single crystal ZnO based compound semiconductor structure to form the p-type ZnO based compound semiconductor layer co-doped with the Group 11 element and the Group 13 element. | 2014-01-30 |
20140027767 | Semiconductor Element, Semiconductor Device, And Method For Manufacturing The Same - The semiconductor element includes an oxide semiconductor layer on an insulating surface; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer. The source electrode layer and the drain electrode layer have sidewalls which are in contact with a top surface of the oxide semiconductor layer. | 2014-01-30 |
20140027768 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - A semiconductor device including photosensor capable of imaging with high resolution is disclosed. The semiconductor device includes the photosensor having a photodiode, a first transistor, and a second transistor. The photodiode generates an electric signal in accordance with the intensity of light. The first transistor stores charge in a gate thereof and converts the stored charge into an output signal. The second transistor transfers the electric signal generated by the photodiode to the gate of the first transistor and holds the charge stored in the gate of the first transistor. The first transistor has a back gate and the threshold voltage thereof is changed by changing the potential of the back gate. | 2014-01-30 |
20140027769 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - A semiconductor device ( | 2014-01-30 |
20140027770 | SEMICONDUCTOR LAMINATE AND PROCESS FOR PRODUCTION THEREOF, AND SEMICONDUCTOR ELEMENT - A semiconductor laminate having small electric resistivity in the thickness direction; a process for producing the semiconductor laminate; and a semiconductor element equipped with the semiconductor laminate. include a semiconductor laminate including a Ga | 2014-01-30 |
20140027771 | DEVICE IDENTIFICATION ASSIGNMENT AND TOTAL DEVICE NUMBER DETECTION - Various embodiments comprise apparatuses to assign a respective one of a sequence of unique device identification (ID) values to each die in a stacked device. In an embodiment, each die may include a respective assignment device to operate on an input and generate, as an output, the respective one of the sequence of the unique device ID values. Each die may also include a respective evaluation device to detect a total number of dice in the stack. Additional apparatuses and methods are described. | 2014-01-30 |
20140027772 | Wafers and Chips Comprising Test Structures - Wafers with chips thereon and corresponding chips are provided where test structures or parts thereof are provided in a peripheral chip area of the chip. Corresponding methods are also disclosed. | 2014-01-30 |
20140027773 | Semiconductor Device Including a Diode and Method of Manufacturing a Semiconductor Device - A semiconductor device includes a transistor cell array in the semiconductor body of a first conductivity type. The semiconductor device further includes a first trench in the transistor cell array between transistor cells. The first trench extends into the semiconductor body from a first side and includes a pn junction diode electrically coupled to the semiconductor body at a sidewall. | 2014-01-30 |
20140027774 | Laser Processed Photovoltaic Devices and Associated Methods - Photovoltaic heterojunction devices, combination hetero- homo-junction devices, and associated methods are provided. In one aspect, for example, a photovoltaic device can include a doped semiconductor substrate having a first textured region and a second textured region opposite the first textured region, a first intrinsic semiconductor layer coupled to the first textured region opposite the semiconductor substrate and a second intrinsic semiconductor layer coupled to the second textured region opposite the semiconductor substrate. A first semiconductor layer can be coupled to the first intrinsic semiconductor layer opposite the first textured region, where the first semiconductor layer is doped to an opposite polarity of the doped semiconductor substrate. A second semiconductor layer can be coupled to the second intrinsic semiconductor layer opposite the second textured region, where the second semiconductor layer is doped to a same polarity as the semiconductor substrate but having a higher dopant concentration as the semiconductor substrate. | 2014-01-30 |
20140027775 | METHODS OF FORMING A METAL CHALCOGENIDE MATERIAL, RELATED METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE, AND A RELATED SEMICONDUCTOR DEVICE STRUCTURE - Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described. | 2014-01-30 |
20140027776 | Transistor and Method of Manufacturing a Transistor - In accordance with an embodiment of the present invention a transistor is disclosed. The transistor comprises a collector, a base and an emitter, wherein a first end width of the base is larger than a middle width of the base, wherein a first end width of the collector is larger than a middle width of the collector, or wherein a first end width of the emitter is larger than a middle width of the emitter. | 2014-01-30 |
20140027777 | GROWING OF GALLIUM-NITRADE LAYER ON SILICON SUBSTRATE - Embodiments relate to growing an epitaxy gallium-nitride (GaN) layer on a porous silicon (Si) substrate. The porous Si substrate has a larger surface area compared to non-porous Si substrate to distribute and accommodate stress caused by materials deposited on the substrate. An interface adjustment layer (e.g., transition metal silicide layer) is formed on the porous silicon substrate to promote growth of a buffer layer. A buffer layer formed for GaN layer may then be formed on the silicon substrate. A seed-layer for epitaxial growth of GaN layer is then formed on the buffer layer. | 2014-01-30 |
20140027778 | Robust Fused Transistor - According to an exemplary implementation, a transistor includes a plurality of drain fingers interdigitated with a plurality of source fingers. The transistor further includes a gate configured to control current conduction between the plurality of drain fingers and the plurality of source fingers. Additionally, the transistor includes a plurality of drain fuses, each being configured to electrically disconnect a drain finger of the plurality of drain fingers from remaining ones of the plurality of drain fingers. At least one of the plurality of drain fuses can electrically couple the drain finger to a common drain pad. The transistor may further include a plurality of source fuses, each being configured to electrically disconnect a source finger of the plurality of source fingers from remaining ones of the plurality of source fingers. | 2014-01-30 |
20140027779 | HIGH ELECTRON MOBILITY TRANSISTOR - According to example embodiments, a high electron mobility transistor includes: a channel layer including a 2-dimensional electron gas (2DEG); a contact layer on the channel layer; a channel supply layer on the contact layer; a gate electrode on a portion of the channel layer; and source and drain electrodes on at least one of the channel layer, the contact layer, and the channel supply layer. The contact layer is configured to form an ohmic contact on the channel layer. The contact layer is n-type doped and contains a Group III-V compound semiconductor. The source electrode and the drain electrode are spaced apart from opposite sides of the gate electrode. | 2014-01-30 |
20140027780 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - Disclosed is a light-emitting device comprising a light-emitting element ( | 2014-01-30 |