05th week of 2015 patent applcation highlights part 15 |
Patent application number | Title | Published |
20150028264 | POSITIVE ELECTRODE FOR BATTERY, AND BATTERY - A positive electrode for a battery includes a positive active material, a conductive agent, and a copolymer. The copolymer includes a constituent unit (a) represented by the following general formula (1) and a constituent unit (b) represented by the following general formula (2): | 2015-01-29 |
20150028265 | CONJUGATED POLYMERS FOR ELECTRONIC DEVICES - A conjugated polymer for electronic devices can include a repeated unit having the structure of formula (I) | 2015-01-29 |
20150028266 | Conductive Sheet Composition - Provided is a conductive sheet composition including a polycarbonate resin, a rubber-modified vinyl-based graft copolymer, carbon nanotube, and a silicone particle to improve conductivity and mechanical physical properties and reduce surface gloss. | 2015-01-29 |
20150028267 | PROCESS FOR PREPARING A CONDUCTIVE COMPOSITION USING A MASTERBATCH - The present invention relates to a composition comprising polystyrene or modified-polystyrene or a mixture thereof, said polystyrene or modified-polystyrene or mixture thereof further comprising carbon nanotubes; wherein the composition comprises a polyolefin; and wherein the composition comprises at most 1.90% by weight of carbon nanotubes, based on the total weight of the composition. The present invention also relates to a method for the preparation of the composition, wherein the carbon nanotubes are provided in polyolefin or styrenic copolymer masterbatch. | 2015-01-29 |
20150028268 | METHOD FOR MANUFACTURING HIGHLY PURE SILICON, HIGHLY PURE SILICON OBTAINED BY THIS METHOD, AND SILICON RAW MATERIAL FOR MANUFACTURING HIGHLY PURE SILICON - Provided are a method for manufacturing a highly pure silicon by unidirectional solidification of molten silicon, that can inexpensively and industrially easily manufacture highly pure silicon that has a low oxygen concentration and low carbon concentration and is suitable for applications such as manufacturing solar cells; highly pure silicon obtained by this method and silicon raw material for manufacturing highly pure silicon. A method for manufacturing highly pure silicon using molten silicon containing 100 to 1000 ppmw of carbon and 0.5 to 2000 ppmw of germanium as the raw material when manufacturing highly pure silicon by unidirectionally solidifying molten silicon raw material in a casting container, the highly pure silicon obtained by this method, and the silicon raw material for manufacturing the highly pure silicon. | 2015-01-29 |
20150028269 | CAPACITOR OIL HAVING EXCELLENT PROPERTIES IN WIDE TEMPERATURE RANGE - The present invention provides a capacitor oil that can maintain breakdown voltage at a high level in a wide temperature range of −50° C. to 30° C., extremely unlikely precipitates as crystals in particular at −50° C. and thus has excellent properties both at normal temperature and a lower temperature. The capacitor oil of the present invention comprises 1,1-diphenylethane and benzyltoluene, wherein the mass ratio of 1,1-diphenylethane to benzyltoluene is 0.8 to 2.0, the total amount of the ortho-isomer and para-isomer in the benzyltoluene is 90 percent by mass or less, and the composition has a 40° C. kinematic viscosity of 3.00 mm | 2015-01-29 |
20150028270 | COMPOSITION FOR OPTICAL MATERIALS - The present invention inhibits the clouding of cured products obtained by polymerizing and curing a composition including sulfur and an episulfide compound, and inhibits clouding particularly in lenses, called plus-power lenses, that have large central thicknesses; and provides a composition for optical materials with which it is possible to predict and assess whether or not clouding will occur after curing and to determine quality at a stage before polymerization and curing. These objectives are achieved by, for example, a composition for optical materials that includes: sulfur, the turbidity value of which when made into a 30-mass % carbon disulfide solution is 10 ppm or less; and an episulfide compound. That is, clouding is prevented and excellent transparency is achieved in optical materials produced from said composition for optical materials that comprises an episulfide compound and sulfur that satisfies the aforementioned condition in terms of turbidity value. | 2015-01-29 |
20150028271 | Photosensitive Resin Composition and Color Filter Prepared Using the Same - The present invention relates to a compound represented by Formula 1, wherein in Formula 1, each of R | 2015-01-29 |
20150028272 | PHOTOSENSITIVE RESIN COMPOSITION, COLOR FILTER AND LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME - The present invention relates to a photosensitive resin composition for a black matrix, a color filter including the black matrix and a liquid crystal display device using the same. The aforementioned photosensitive resin composition includes a polysiloxane (A), a compound having a vinyl unsaturated group (B), a photo initiator (C), a solvent (D) and a black pigment (E). The compound having the vinyl unsaturated group (B) includes a compound having an acidic group and at least three vinyl unsaturated groups (B-1). | 2015-01-29 |
20150028273 | APPARATUS FOR PUSHING A FASTENER FROM A HOST MATERIAL - An apparatus for pushing a fastener from a host material with, for example, an air hammer includes a punch shank, a compression spring, a hollow sleeve, a fastener and a punch. The hollow sleeve includes an opening fowled therein for interfitment over a central portion of the punch shank, and a set screw placed therein for engagement with a retention flat portion of a central portion of the punch shank The punch includes a top that operably engages with the air hammer, and a bottom end having a recess formed therein, where the recess is configured and arranged for retention of a top of the punch shank. The spring fits over the punch shank, and contacts the bottom end of the punch and the top end of the sleeve. | 2015-01-29 |
20150028274 | ASSEMBLY AND METHOD FOR ASSEMBLING A CABLE PULLER - A cable puller assembly is provided. The cable puller assembly includes a gripping assembly including a first engaging member and a second engaging member removably coupled to the first engaging member, the gripping assembly further including an assembly interior surface at least partially defining a cable channel configured to receive a cable. The cable puller assembly further includes a plurality of friction elements disposed on the assembly interior surface, a cable support member coupled to the gripping assembly, the cable support member configured to guide the cable through the cable channel, and a pulling member coupled to the gripping assembly. | 2015-01-29 |
20150028275 | ELECTROMECHANICAL APPARATUS FOR EVACUATING BUILDINGS IN THE EVENT OF A FIRE - An electromechanical apparatus for evacuating buildings in the event of a fire includes a reel that has, rolled up on it, a mooring cable that longitudinally passes through the inside of a rigid tube, ending in an evacuation harness, where an individual will be secured. The weight of the individual makes it possible to rock the tube and a lever that has a braking disc and which acts on a brake disc that allows, by means of a mechanical transmission system, the braking and/or retention of the reel and consequently the descent of the individual. There is a radio-control unit and a standalone electric and electronic safety system that is activated when the speed of descent of the individual is too great. The apparatus allows evacuation and can be reused, once used. The apparatus carries away, brakes, retains and evacuates the individual making use of the electromechanical apparatus. | 2015-01-29 |
20150028276 | PORTABLE RESCUE TOOL AND METHOD OF USE - A portable, hand-operated rescue tool is provided for rescue and extreme duty operations where an object needs to be cut, crushed, pierced and separated, or lifted. The rescue tool includes a body, a support handle and articulating jaw force members used to impart high forces on an object. The tool includes a manually-operated, pivoting actuation handle connected to a high pressure fluid displacement system to pivotally rotate the jaw force arms in a selected direction or mode of operation to suit the situation. | 2015-01-29 |
20150028277 | POST-CABLE CONNECTION FOR A ROADWAY BARRIER - A post-cable connection for releasably connecting a cable to a post, for example in a roadway cable barrier system. A post-cable connector is hung from the top end of a post whereby when the post is impacted and urged toward ground level the cable is released from the post. | 2015-01-29 |
20150028278 | NONVOLATILE MEMORY TRANSISTOR AND DEVICE INCLUDING THE SAME - Provided are nonvolatile memory transistors and devices including the nonvolatile memory transistors. A nonvolatile memory transistor may include a channel element, a gate electrode corresponding to the channel element, a gate insulation layer between the channel element and the gate electrode, an ionic species moving layer between the gate insulation layer and the gate electrode, and a source and a drain separated from each other with respect to the channel element. A motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode. A threshold voltage changes according to the motion of the ionic species. The nonvolatile memory transistor has a multi-level characteristic. | 2015-01-29 |
20150028279 | RESISTIVE RANDOM ACCESS MEMORY DEVICES WITH EXTREMELY REACTIVE CONTACTS - A resistive switching device includes a first electrode and a transition metal oxide layer formed on the first electrode. An oxygen scavenging electrode is formed on the transition metal oxide wherein the oxygen scavenging electrode removes oxygen from the transition metal oxide layer to increase formation of oxygen vacancies in the transition metal oxide layer to enable a switching mode when a bias is applied between the first electrode and the oxygen scavenging electrode. | 2015-01-29 |
20150028280 | MEMORY CELL WITH INDEPENDENTLY-SIZED ELEMENTS - Memory cell architectures and methods of forming the same are provided. An example memory cell can include a switch element and a memory element formed in series with the switch element. A smallest lateral dimension of the switch element is different than a smallest lateral dimension of the memory element. | 2015-01-29 |
20150028281 | RESISTIVE MEMORY STRUCTURE - A resistive memory structure including at least one reactive layer, at least one electrode, and at least one resistance-changing material is provided. The reactive layer extends along a first direction and a second direction. The electrode extends at least along a third direction, wherein the first direction, the second direction, and the third direction are different from each other. At least part of the resistance-changing material is disposed between the reactive layer and the electrode. When ions diffuse from the resistance-changing material to the reactive layer or from the reactive layer to the resistance-changing material, resistance of the resistance-changing material changes. | 2015-01-29 |
20150028282 | RESISTANCE SWITCHING DEVICE AND PROCESS FOR PRODUCING THEREOF - resistance switching device having a high resistance variation ratio, an excellent response characteristic, an excellent resistance memory characteristic (retention characteristics) and an excellent repeat resistance. The resistance switching device comprises an n-type oxide semiconductor and first and second electrodes which are disposed so as to interpose at least a part of the n-type oxide semiconductor therebetween wherein a Schottky junction which provides resistance variation/memory characteristics by the application of voltage having different polarities between the first and second electrodes is formed at an interface between the n-type oxide semiconductor and the first electrode; and the first electrode is positioned such that it is in contact with the n-type oxide semiconductor, and has a lower layer which is formed from Au oxide or a Pt oxide or Au or Pt containing oxygen having the thickness of 1-50 nm. | 2015-01-29 |
20150028283 | Methods of Forming Memory Cells and Arrays - Some embodiments include methods of forming memory cells. Heater structures are formed over an array of electrical nodes, and phase change material is formed across the heater structures. The phase change material is patterned into a plurality of confined structures, with the confined structures being in one-to-one correspondence with the heater structures and being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures. Some embodiments include memory arrays having heater structures over an array of electrical nodes. Confined phase change material structures are over the heater structures and in one-to-one correspondence with the heater structures. The confined phase change material structures are spaced from one another by one or more insulative materials that entirely laterally surround each of the confined phase change material structures. | 2015-01-29 |
20150028284 | MEMORY CELLS HAVING A NUMBER OF CONDUCTIVE DIFFUSION BARRIER MATERIALS AND MANUFACTURING METHODS - Memory cells having a select device material located between a first electrode and a second electrode, a memory element located between the second electrode and a third electrode, and a number of conductive diffusion barrier materials located between a first portion of the memory element and a second portion of the memory element. Memory cells having a select device comprising a select device material located between a first electrode and a second electrode, a memory element located between the second electrode and a third electrode, and a number of conductive diffusion barrier materials located between a first portion of the select device and a second portion of the select device. Manufacturing methods are also described. | 2015-01-29 |
20150028285 | SEMICONDUCTOR NANO LAYER STRUCTURE AND MANUFACTURING METHOD THEREOF - A method for manufacturing a semiconductor nano layer structure includes: two substrates are provided; a plurality of semiconductor nanowires are formed on one of the substrates; an absorption surface is formed on the other substrate; one of the substrates is fixed on a cylindrical roller, the cylindrical roller is brought into contact with a surface of the substrate which is stationary and is not fixed on the cylindrical roller, and rolled with a constant velocity and pressure so that the semiconductor nanowires are break, detached, transferred and absorbed, and a semiconductor nano layer structure is formed on the stationary substrate; a de-laminating process is performed to separate the semiconductor nano layer structure from the second substrate; an electric Joule heat welding process is locally performed to bond each of the semiconductor nanowires of the semiconductor nano layer structure or each semiconductor nano layer structure. | 2015-01-29 |
20150028286 | METHOD FOR GROWING GERMANIUM/SILICON-GERMANIUM SUPERLATTICE - A bulk manufacturing method for growing silicon-germanium stained-layer superlattice (SLS) using an ultra-high vacuum-chemical vapor deposition (UHV-CVD) system and a detector using it is disclosed. The growth method overcomes the stress caused by silicon and germanium lattice mismatch, and leads to uniform, defect-free layer-by-layer growth. Flushing hydrogen between the layer growths creates abrupt junctions between superlattice structure (SLS) layers. Steps include flowing a mixture of phosphine and germane gases over a germanium seed layer. This in-situ doped germanium growth step produces an n-doped germanium layer. Some of the phosphorus diffuses into the underlying germanium and reduces the stress in the underlying germanium that is initially created by the lattice mismatch between germanium and silicon. Phosphine can be replaced by diborane if a p-doped layer is desired. The reduction of stress results in a smooth bulk germanium growth. | 2015-01-29 |
20150028287 | DEVICE WITH QUANTUM WELL LAYER - A device for guiding and absorbing electromagnetic radiation, the device including: absorbing means for absorbing the electromagnetic radiation; and a coupled to the absorbing means for guiding the electromagnetic radiation to the absorbing means, wherein the waveguide and the absorbing means are formed from a structure including a first cladding layer, a second cladding layer over the first cladding layer, and a quantum-well layer between the first and second cladding layers, the quantum-well layer being formed of a material having a different composition to the first and second cladding layers, wherein the thickness and the composition of the quantum-well layer is optimised to provide an acceptable level of absorption of electromagnetic radiation in the waveguide while providing an appropriate band gap for absorption of the electromagnetic radiation in the absorbing means. | 2015-01-29 |
20150028288 | Synthesis of CdSe/ZnS Core/Shell Semiconductor Nanowires - The present disclosure provides systems, processes, articles of manufacture, and compositions that relate to core/shell semiconductor nanowires. Specifically, the disclosure provides a novel semiconductor material, CdSe/ZnS core/shell nanowires, as well as a method of preparation thereof. The disclosure also provides a new continuous flow method of preparing core/shell nanowires, including CdSe/CdS core/shell nanowire and CdSe/ZnS core/shell nanowires. | 2015-01-29 |
20150028289 | ACTIVE MATRIX USING HYBRID INTEGRATED CIRCUIT AND BIPOLAR TRANSISTOR - A hybrid integrated circuit device includes a semiconductor-on-insulator substrate having a base substrate, a semiconductor layer and a dielectric layer disposed therebetween, the base substrate being reduced in thickness. First devices are formed in the semiconductor layer, the first devices being connected to first metallizations on a first side of the dielectric layer. Second devices are formed in the base substrate, the second devices being connected to second metallizations formed on a second side of the dielectric layer opposite the first side. A through via connection is configured to connect the first metallizations to the second metallizations through the dielectric layer. Pixel circuits and methods are also disclosed. | 2015-01-29 |
20150028290 | HETEROLEPTIC OSMIUM COMPLEX AND METHOD OF MAKING THE SAME - A method of making an osmium(II) complex having Formula I, L | 2015-01-29 |
20150028291 | METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - A method of manufacturing an organic light-emitting display apparatus includes disposing a low melting glass (LMG) thin film to cover a display unit disposed on a substrate, and radiating an energy beam onto the LMG thin film. Accordingly, an encapsulation layer having excellent sealing characteristics may be rapidly formed, and thus manufacturing process efficiency and product reliability may be improved. | 2015-01-29 |
20150028292 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - An organic light-emitting display device includes a thin film transistor, a planarization layer on the thin film transistor and having an integral pixel sectioning portion defining a boundary of a pixel area, a pixel electrode connected to the thin film transistor in the pixel area inside the pixel sectioning portion, a light-emitting layer on the pixel electrode, and an opposite electrode on the light emitting layer. | 2015-01-29 |
20150028293 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS - An organic light emitting display apparatus capable of reducing a dead space for arranging wirings in a panel. The organic light emitting display apparatus includes: a panel including a screen portion on which images are displayed and a non-screen portion surrounding the screen portion; a first wiring portion and a second wiring portion formed on different locations of the non-screen portion to be connected to pixel wirings on the screen portion; and a film substrate including a plurality of connection portions connected to the first wiring portion and the second wiring portion. Thus, the dead space that is formed on the non-screen portion of the panel for forming the wirings may be effectively reduced. | 2015-01-29 |
20150028294 | ORGANIC LIGHT-EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME - Organic light-emitting displays and methods of manufacturing the same are disclosed. An organic light-emitting display includes a substrate; a display panel provided on the substrate, the display panel having an emission area in which an organic light-emitting device is provided and a non-emission area that separates the emission area; and a color-changing material layer provided on the display panel, wherein the color-changing material layer includes a light-transmission part corresponding to the emission area and a light-blocking part corresponding to the non-emission area. | 2015-01-29 |
20150028295 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS USING FACING TARGET SPUTTERING APPARATUS AND METHOD OF MANUFACTURING THE ORGANIC LIGHT EMITTING DISPLAY APPARATUS - A method of manufacturing an organic light-emitting display apparatus includes preparing a deposition target in which an organic light-emitting portion is formed on a substrate, forming a pre-encapsulation layer for encapsulating the organic light-emitting portion by using a facing target sputtering apparatus, and forming an encapsulation layer by performing a plasma surface process on the pre-encapsulation layer by using the facing target sputtering apparatus. The facing target sputtering apparatus includes a chamber in which a mounting portion for accommodating the deposition target is provided, a gas supply portion facing the mounting portion and supplying gas to the chamber, a first target portion and a second target portion disposed in the chamber and facing each other, and an induced magnetic field coil surrounding the exterior of the chamber. | 2015-01-29 |
20150028296 | WIRE GRID POLARIZER AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THE SAME - An organic light-emitting display includes a display unit configured to generate an image and a wire grid polarizer on the display unit; the wire grid polarizer includes a base substrate and a plurality of wire grids formed on the base substrate, wherein the plurality of wire grids are spaced from one another and disposed in parallel, and a first spacing between each pair of the plurality of wire grids in a first region of the base substrate and a second spacing between each pair of the plurality of wire grids in a second region of the base substrate is different. | 2015-01-29 |
20150028297 | FACING TARGETS SPUTTERING APPARATUS, ORGANIC LIGHT-EMITTING DISPLAY APPARATUS MANUFACTURED USING THE FACING TARGETS SPUTTERING APPARATUS, AND METHOD FOR MANUFACTURING THE ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - A sputtering apparatus, an organic light-emitting display apparatus manufactured using the sputtering apparatus, and a method for manufacturing the organic light-emitting display apparatus are provided. The sputtering apparatus includes: a chamber including a mounting portion configured to hold a deposition target material; a gas supply unit that faces the mounting portion and supplies gas to the chamber; a first target portion and a second target portion that are disposed to face each other within the chamber; and a magnetic field induction coil that surrounds an outside of the chamber. | 2015-01-29 |
20150028298 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF - An organic light-emitting display apparatus includes: a substrate; pixels defined on the substrate, where each pixel includes a first region including a light-emitting region and a second region including a transmission region; a third region defined on the substrate disposed between the pixels; first electrodes disposed in the pixels on the substrate, respectively, where each first electrode is disposed in the first region of a corresponding pixel; an organic emission layer disposed to cover the first electrodes; a first auxiliary layer disposed on the organic emission layer in the second region and which exposes the first region; a second electrode disposed on the organic emission layer in the first region; a second auxiliary layer disposed in the first and second regions and which exposes the third region; and a third electrode disposed in the third region and in contact with the second electrode. | 2015-01-29 |
20150028299 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode display including: a pixel electrode; a hole auxiliary layer on the pixel electrode; a passivation layer on the hole auxiliary layer; an organic light emitting layer on the passivation layer; an electron auxiliary layer on the organic light emitting layer; and a common electrode on the electron auxiliary layer is disclosed. A method for manufacturing an organic light emitting diode display is also disclosed. | 2015-01-29 |
20150028300 | THIN FILM TRANSISTOR, ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR - A thin film transistor includes a gate electrode provided on a substrate, a semiconductor layer insulated from the gate electrode and including indium, tin, zinc and gallium oxide, and source/drain electrodes formed on the semiconductor layer. | 2015-01-29 |
20150028301 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD FOR MANUFACTURING THE SAME - An organic light-emitting display apparatus includes: a substrate, and an organic light-emitting device disposed on the substrate. The organic light-emitting device includes a first electrode, a second electrode, and an intermediate layer including at least an organic emission layer. In addition, the organic light-emitting display apparatus further includes a thin film encapsulating layer disposed on the organic light-emitting device. The thin film encapsulating layer includes at least one inorganic film including a low temperature viscosity transition (LVT) inorganic material. The LVT inorganic material includes tin oxide and at least one of boron oxide (B | 2015-01-29 |
20150028302 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD FOR MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - A method for manufacturing an organic light-emitting display apparatus including: forming an organic light-emitting device on a substrate, the organic light-emitting device including a first electrode, a second electrode, and an intermediate layer including at least an organic emission layer; and forming a thin film encapsulating layer on the organic light-emitting device, wherein the thin film encapsulating layer includes at least one inorganic film including a low temperature viscosity transition (LVT) inorganic material and an oxide, and the oxide includes zirconium-tungsten oxide or lithium-aluminum-silicon oxide. | 2015-01-29 |
20150028303 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF - An improved organic light-emitting display apparatus prevents damage of wiring due to a mask during the manufacturing process, and a manufacturing method thereof. An organic light-emitting display apparatus includes a display unit formed on a substrate, a pad unit formed at one outer side of the display unit on the substrate, a wiring unit formed as a multilayer structure on the substrate to couple the display unit to the pad unit, a thin film encapsulating layer covering the display unit, and a protrusion unit that does not overlap the uppermost layer of wiring of the multilayered wiring unit. | 2015-01-29 |
20150028304 | ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS - The invention provides an electro-optical device that has luminescent elements of a long lifetime by preventing oxygen or moisture from entering to luminescent layers or electrodes even in case of an electrode-optical device provided with a number of luminescent layers and an electronic apparatus provided with the electro-optical device. The invention can include an electro-optical device having first electrodes on a base body, a plurality of element areas including element layers including at least one functional layers disposed above the first electrodes, a second electrode formed above the element layers, a surrounding sections disposed on the base body so as to cover outer sides of the element layers included the element areas in the nearest proximity of the periphery of the base body, and a gas-barrier layer covering over the second electrode. Outer sides of the surrounding sections can be covered with the second electrode, and the gas-barrier layer can be in contact with the base body. | 2015-01-29 |
20150028305 | LIGHT EMITTING DEVICE INCLUDING BLUE EMITTING QUANTUM DOTS AND METHOD - A method for preparing a light emitting device comprising: disposing an electron-injection layer comprising a metal oxide on a cathode, disposing a first layer adjacent the electron-injection layer, the first layer comprising a small molecule material with a bandgap of at least about 3 eV capable of blocking holes, forming an emissive layer comprising quantum dots capable of emitting blue light upon excitation at a surface of the first layer opposite the electron-injection layer; disposing a second layer comprising a material capable of transporting holes and blocking electrons with a bandgap of at least about 3 eV adjacent a surface of the emissive layer opposite the first layer, and disposing an anode over the second layer. A light-emitting device is also disclosed. | 2015-01-29 |
20150028306 | ENCAPSULATION STRUCTURE FOR AN ORGANIC LIGHT EMITTING DISPLAY DEVICE, AN ORGANIC LIGHT EMITTING DISPLAY DEVICE, AND METHODS OF MANUFACTURING AN ORGANIC LIGHT EMITTING DISPLAY DEVICE - An encapsulation structure for an organic light emitting display device, an organic light emitting display device, and a method of manufacturing an organic light emitting display device are provided. The encapsulation structure includes a first porous layer, a first planarization layer, and a first barrier layer. The first porous layer above a substrate may have a curved top surface. The first planarization layer on the first porous layer may have a flat top surface. The first barrier layer on the first planarization layer may include a low melting point glass. | 2015-01-29 |
20150028307 | ORGANIC LIGHT EMITTING DISPLAY - An organic light emitting display including a back plane including an active area on which an image is displayed, and a bezel area outside the active area; a pixel array on the active area and configured to display the image; an encapsulation plate encapsulating the pixel array; a transparent adhesive film free of a moisture absorption filler, formed on the active area and disposed between the encapsulation plate and the back plane; and a darn including a sealant with a moisture absorption filler formed in the bezel area and adjoining the adhesive layer so as to limit moisture from penetrating into the pixel array. | 2015-01-29 |
20150028308 | ORGANIC LIGHT EMITTING DEVICE, ORGANIC LIGHT EMITTING DISPLAY APPARATUS HAVING THE ORGANIC LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting device including: a first electrode, a hole injection layer on the first electrode, a hole transport layer on the hole injection layer, an organic light emitting layer on the hole transport layer, a first electron transport layer on the organic light emitting layer, a second electron transport layer on the organic light emitting layer, an electron injection layer on the second electron transport layer and a second electrode on the electron injection layer, where the first electron transport layer includes a first material for improving a thermal stability, a second material for improving a luminous efficiency and a third material for reducing a driving voltage, and the second electron transport layer is laminated with the first electron transport layer, and the second electrode faces the first electrode. | 2015-01-29 |
20150028309 | LIGHT-EMITTING ELEMENT DISPLAY DEVICE - A light-emitting element display device includes: a thin film transistor substrate including transistors respectively controlling the amounts of light emission of a plurality of sub-pixels arranged in a display region; and a color filter substrate arranged to overlap with the thin film transistor substrate. The thin film transistor substrate includes a light-emitting organic layer covering the entire display region and emitting light in respective light-emitting regions in the plurality of sub-pixels, an insulating bank formed of an insulating material around each of the light-emitting regions, including an inclined surface being closer to the color filter substrate according to increasing in thickness with increasing distance from the light-emitting region, and a fluorescent layer formed on the inclined surface and excited by light of the light-emitting region to thereby emit light. | 2015-01-29 |
20150028310 | ORGANIC LIGHT-EMITTING DIODE (OLED) SUBSTRATE AND DISPLAY DEVICE - An organic light-emitting diode (OLED) substrate, which includes a plurality of light-emitting sub-pixels and a pixel partition wall, wherein at least one layer among hole injection layers (HIL), hole transport layers (HTL) and organic light-emitting layers of at least two light-emitting sub-pixels has a different thickness; and upper surfaces of the HIL, the HTL and the organic light-emitting layer of any light-emitting sub-pixel are each parallel and level to an upper surface of one respective lyophilic film layer of the pixel partition wall. The OLED substrate can be used for improving the surface smoothness of each organic layer of the light-emitting sub-pixel. The embodiment of the present invention further provides a display device. | 2015-01-29 |
20150028311 | DOPED ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD FOR PREPARING SAME - Disclosed is a doped organic electroluminescent device, comprising the following structures laminated in succession: a conductive anode substrate, a hole injecting layer, a hole transportation layer, an electron barrier layer, a light-emitting layer, an electron transportation layer, an electron injecting layer and a cathode; and the material for the electron barrier layer is a hole transportation material doped with a cerium salt. The material for an electron barrier layer in such a doped organic electroluminescent device is a hole transportation material doped with a cerium salt which has a low work function of approximately −2.0 eV and can effectively block electrons. By doping the cerium salt having a low work function into the hole transportation material as the electron barrier layer, the LUMO energy level of the hole transportation material is greatly increased, thereby elevating the potential barrier between the electron barrier layer and the light-emitting layer, so that it is difficult for the electrons to transit to the side of the hole transportation layer and a good electron barrier effect is achieved. The present invention also provides a method for preparing the doped organic electroluminescent device. | 2015-01-29 |
20150028312 | OPTOELECTRONIC COMPONENT, METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT, DEVICE FOR SEPARATING A ROOM, AND PIECE OF FURNITURE - Various embodiments relate to an optoelectronic component, including a first electrode layer, a first organic functional layer structure on or over the first electrode layer, a nontransparent second electrode layer on or over the first organic functional layer structure, a second organic functional layer structure on or over the second electrode layer, and a third electrode layer on or over the second organic functional layer structure. The material for the second electrode layer is selected in such a way that a matt impression of at least one side of the optoelectronic component is imparted. | 2015-01-29 |
20150028313 | POLYMER - A polymer comprising an optionally substituted repeat unit of formula (I): wherein R | 2015-01-29 |
20150028314 | ORGANIC ELECTROLUMINESCENT LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - Provided is an organic electroluminescent light emitting device that can prevent moisture and/or oxygen permeation to thereby suppress degradation and that has increased light extraction efficiency. The organic electroluminescent light emitting device includes an organic electroluminescent element including an optically transparent first electrode, a light emitting function layer composed of two or more layers including a light emitting layer, and a second electrode, which are stacked on a surface of an optically transparent substrate in that order. A functional scattering section is provided in contact with at least part of an end face of the optically transparent substrate. The functional scattering section is foamed of a resin composition including a scattering body having moisture absorption property and/or oxygen absorption property. With the functional scattering section, moisture and/or oxygen can be prevented from entering inside the device and the light extraction efficiency can be enhanced. | 2015-01-29 |
20150028315 | ORGANIC LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING SAME - An organic light-emitting device includes at least an underlayer, a partition wall, and an organic film. The underlayer is disposed above a substrate. The partition wall covers a first part and surrounds a second part of the surface of the underlayer. The organic film includes organic material, is disposed in a recess formed by the partition wall surrounding the second part, and is in contact with the surface of the underlayer and a surface of the partition wall. The surface of the underlayer has a protruding portion that protrudes in an upward direction. The protruding portion is composed of a top surface and an inclined surface surrounding the top surface. The first part includes least the top surface and a portion of the inclined surface, and an inner edge of the partition wall is in contact with the inclined surface or a level portion of the surface of the underlayer. | 2015-01-29 |
20150028316 | LIGHT EMITTING PANEL AND METHOD FOR MANUFACTURING SAME - In a light emitting panel, organic EL panels are laminated in a step-like shape in a front-back direction to form organic EL panel groups, and the organic EL panel groups are further laminated in a step-like shape in a left-right direction. Each of the organic EL panels comprises a power feed part at one side of the transparent support substrate in the left-right direction. The power feed part of each of the organic EL panels is aligned with other power feed parts in the front-back direction at one side of the left-right direction, and is disposed at a position that allows the power feed part to overlap with a laminate of an organic EL panel of an adjacent organic EL panel group. | 2015-01-29 |
20150028317 | ORGANIC ELECTROLUMINESCENT ELEMENT - The organic electroluminescent element has a transparent substrate, a transparent first electrode, an organic layer, a second electrode, and a light-outcoupling layer. The light-outcoupling layer is formed between the transparent substrate and the first electrode. The first electrode, the organic layer and the second electrode constitute an electroluminescent laminate. A covering substrate facing the transparent substrate is adhered to the surface of the transparent substrate via an adhesive sealing portion surrounding the periphery of the electroluminescent laminate. A connection electrode extending outward from inside a surrounded region where the electroluminescent laminate is covered with the covering substrate is formed at least on the surface of the light-outcoupling layer. The average thickness of the light-outcoupling layer in an adhesion region where the adhesive sealing portion is formed is smaller than the thickness in the central region where the electroluminescent laminate is formed. | 2015-01-29 |
20150028318 | Organic Optoelectronic Device and Method for Producing an Organic Optoelectronic Device - An organic optoelectronic device has a first substrate, on which a functional layer stack having at least one first electrode, thereabove an organic functional layer and thereabove a second electrode is arranged. A encapsulating arrangement includes a second substrate, on which a connecting material and at least one spacer facing the functional layer stack are applied. The connecting material is arranged between the first and second substrate and mechanically connects the first and second substrate together. The functional layer stack is enclosed by the connecting material in a frame-like manner. At least one of the first and second electrode includes at least one opening, above which the at least one spacer is arranged and which has a larger lateral dimension that the spacer. | 2015-01-29 |
20150028319 | METHOD FOR PRODUCING ORGANIC EL DEVICE AND ORGANIC EL DEVICE - A method for producing an organic EL device and the organic EL device, capable of enhancing reliability of the organic EL device by suppressing peeling caused by stress concentration to each layer end through reduction in the stress concentration even in the case of using a roll-to-roll process. The method includes: supplying a substrate from a delivery roll to a wind-up roll; forming a first electrode layer over the substrate; forming an organic EL layer over the first electrode layer; and forming a second electrode layer over the organic EL layer. The first electrode layer s formed using a shadow mask. At least a part of a side surface of the first electrode layer is a tapered surface of inwardly sloping from a lower side toward an upper side. An angle formed between the tapered surface and the surface of the substrate on the side over which the first electrode layer is formed is 1° or less. | 2015-01-29 |
20150028320 | TRANSPARENT ELECTRODE, ELECTRONIC DEVICE, AND TRANSPARENT ELECTRODE MANUFACTURING METHOD - Provided is a transparent electrode having both sufficient conductivity and light transmittance, and also provided is an electronic device which improves performance by using said transparent electrode. Further provided is method of manufacturing said transparent electrode. This transparent electrode is provided with a nitrogen-containing layer and an electrode layer. The nitrogen-containing layer is formed at a deposition speed of 0.3 nm/s or greater, and is configured using a compound containing nitrogen atoms. Further, the electrode layer is provided adjacent to the nitrogen-containing layer, has a 12 nm or lower film thickness and a measurable sheet resistance, and is configured using silver or an alloy having silver as the main component. | 2015-01-29 |
20150028321 | GREEN LUMINESCENT MATERIALS - There is provided a compound having Formula I | 2015-01-29 |
20150028322 | DOPED CONJUGATED POLYMERS, DEVICES, AND METHODS OF MAKING DEVICES - Use of certain materials in hole injection or hole transport layers can improve the operational lifetimes in organic electronic devices. Compositions comprising a doped conjugated polymer, doped with a redox dopant, including iodonium salt, can increase lifetimes. Inks can be formulated and cast as films in organic electronic devices including OLEDs, PHOLEDs, and OPVs. One embodiment provides a composition with a conjugated polymer doped with a redox dopant. Non-aqueous based inks can be formulated. Iodonium salts can be used. | 2015-01-29 |
20150028323 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - Novel phosphorescent tetradentate platinum (II) compounds comprising a twisted aryl group are provided. Also provided are novel phosphorescent tetradentate platinum (II) compounds comprising an imidazo[1,2-f]phenanthridine moiety. The compounds may be used in organic light emitting devices to provide improved device efficiency, line shape and lifetime. | 2015-01-29 |
20150028324 | DISPLAY DEVICE - A display device includes, on a substrate, light emitting elements each formed by sequentially stacking a first electrode layer, an organic layer including a light emission layer, and a second electrode layer and arranged in first and second directions which cross each other, a drive circuit including drive elements that drive light emitting elements, and a wiring extending in the first direction, and an insulating layer disposed in a gap region sandwiched by the light emitting elements neighboring in the second direction and having a recess or a projection. The wiring is disposed in an overlap region overlapping with the recess or the projection in the insulating layer in a thickness direction, in the gap region, and the second electrode layers in the light emitting elements neighboring in the second direction are separated from each other by the recess or the projection in the insulating layer. | 2015-01-29 |
20150028325 | METHOD FOR PRODUCING MOLD FOR TRANSFERRING FINE PATTERN, METHOD FOR PRODUCING SUBSTRATE HAVING CONCAVE-CONVEX STRUCTURE USING SAME, AND METHOD FOR PRODUCING ORGANIC EL ELEMENT HAVING SAID SUBSTRATE HAVING CONCAVE-CONVEX STRUCTURE - A mold for transferring a fine pattern, suitable for producing a substrate having a concave-convex structure such as a diffraction grating, can be provided by a simple process and with a high throughput. A method for producing a mold for transferring a fine pattern includes: a step of coating a surface of a base member with a solution containing a block copolymer and polyalkylene oxide; a solvent phase-separation step of phase-separating the block copolymer under a presence of vapor of an organic solvent so as to obtain a block copolymer film of the block copolymer, the block copolymer film having a concave-convex structure on a surface thereof and a horizontal cylinder structure in an interior thereof; a step of stacking a metal layer by electroforming; and a step of releasing the base member having the concave-convex structure formed thereon from the metal layer. | 2015-01-29 |
20150028326 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE - A thin film transistor includes a gate electrode, a channel layer, a source electrode, and a drain electrode. The channel layer is made of an amorphous oxide semiconductor. The channel layer includes one high oxygen ion concentration region, or two high oxygen ion concentration regions one above the other. An oxygen ion density of each high oxygen ion concentration region is in a range of from about 1×10 | 2015-01-29 |
20150028327 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A thin film transistor includes a substrate, a gate electrode, a buffer layer, a gate insulating layer, an active layer, an etching stop layer, a source electrode and a drain electrode. The gate electrode is formed on the substrate. The buffer layer partially covers both side portions of the gate electrode. The gate insulating layer covers the gate electrode and the buffer layer. The active layer is formed on the gate insulating layer. The etching stop layer is formed on the active layer, and has a first opening and a second opening on the active layer. The source electrode is formed on the etching stop layer, and contacts with the active layer through the first opening. The drain electrode is formed on the etching stop layer, and is contacted with the active layer through the second opening. | 2015-01-29 |
20150028328 | DISPLAY DEVICE - A non-breakable display device, electronic appliance, or lighting device is provided. A bendable display device in which a first flexible substrate and a second flexible substrate provided with transistors overlap each other with a bonding layer therebetween is fabricated. The display device is bent so that the first substrate is positioned on the inner side (the valley side) and the second substrate is positioned on the outer side (the mountain side). | 2015-01-29 |
20150028329 | SEMICONDUCTOR DEVICE - The number of oxide semiconductor layers is increased with the parallel connection of a first transistor and a second transistor. The parasitic capacitance effects on the driving of the transistor. An oxide semiconductor layer has a first channel formation region and a second channel formation region. Over the oxide semiconductor layer, a source electrode and a drain electrode are placed. An insulating layer is placed over the source electrode and the drain electrode. A gate electrode is placed over the insulating layer. The gate electrode has an opening. The opening overlaps with the source electrode or the drain electrode. | 2015-01-29 |
20150028330 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a semiconductor device in which a deterioration in electrical characteristics which becomes more noticeable as miniaturization can be suppressed. The semiconductor device includes a first oxide semiconductor film over an insulating surface; a second oxide semiconductor film over the first oxide semiconductor film; a source electrode and a drain electrode in contact with each side surface of the first oxide semiconductor film and the second oxide semiconductor film; a first insulating film and a second insulating film over the source electrode and the drain electrode; a third oxide semiconductor film over the second oxide semiconductor film, the source electrode, and the drain electrode; a gate insulating film over the third oxide semiconductor film; and a gate electrode in contact with an upper surface of the gate insulating film and facing an upper surface and the side surface of the second oxide semiconductor film. | 2015-01-29 |
20150028331 | THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING BACKPLANE FOR FLAT PANEL DISPLAY - Provided are a thin-film transistor (TFT), a method of manufacturing the same, and a method of manufacturing a backplane for a flat panel display (FPD). The method of manufacturing the TFT according to an embodiment of the present invention includes forming a gate electrode on a substrate; forming an insulating layer on the substrate to cover the gate electrode; performing a plasma treatment on an upper surface of the insulating layer using a halogen gas; forming an oxide semiconductor layer on the insulating layer and positioned to correspond to the gate electrode; and forming source and drain electrodes on the insulating layer to contact and over portions of the oxide semiconductor layer. | 2015-01-29 |
20150028332 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - This semiconductor device ( | 2015-01-29 |
20150028333 | METAL MATRIX COMPOSITE AND METHOD FOR PRODUCING THE SAME - A metal matrix composite having high corrosion resistance even if the coating film deposit amount is low is obtained. A metal matrix composite includes a metal or alloy substrate coated with a molten transition metal oxide glass, wherein the transition metal oxide glass has an n-type polarity. Further, a method for producing a metal matrix composite includes a step of applying a paste containing a transition metal oxide glass, an organic binder, and an organic solvent onto the surface of a metal or alloy substrate, and a step of forming a glass coating film on the substrate by heating to and maintaining a temperature equal to or higher than the softening point of the transition metal oxide glass after the application step, wherein the transition metal oxide glass has an n-type polarity. | 2015-01-29 |
20150028334 | ELECTROCONDUCTIVE THIN FILM, COATING LIQUID FOR FORMING ELECTROCONDUCTIVE THIN FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR - To provide an electroconductive thin film, containing: a metal oxide containing indium and tin; and gold. | 2015-01-29 |
20150028335 | IMAGING DEVICE AND METHOD FOR DRIVING THE SAME - An imaging device capable of obtaining image data with a small amount of X-ray irradiation is provided. The imaging device obtains an image using X-rays and includes a scintillator and a plurality of pixel circuits arranged in a matrix and overlapping with the scintillator. The use of a transistor with an extremely small off-state current in the pixel circuits enables leakage of electrical charges from a charge accumulation portion to be reduced as much as possible, and an accumulation operation to be performed substantially at the same time in all of the pixel circuits. The accumulation operation is synchronized with X-ray irradiation, so that the amount of X-ray irradiation can be reduced. | 2015-01-29 |
20150028336 | Active Device Array Substrate - An active device array substrate includes a flexible substrate, a gate electrode, a dielectric layer, a channel layer, a source electrode, a drain electrode, and a pixel electrode. The flexible substrate has a transistor region and a transparent region adjacent to each other. The gate electrode is disposed on the transistor region. The dielectric layer covers the flexible substrate and the gate electrode. A portion of the dielectric layer disposed on the gate electrode has a first thickness. Another portion of the dielectric layer disposed on the transparent region has a second thickness less than the first thickness. The channel layer is disposed above the gate electrode. The source electrode and the drain electrode are electrically connected to the channel layer. The pixel electrode is disposed on the dielectric layer which is disposed on the transparent region. The pixel electrode is electrically connected to the drain electrode. | 2015-01-29 |
20150028337 | Monitoring and Controlling Temperatures in a Semiconductor Structure - An electronic device includes a semiconductor structure. A first temperature sensor is located at a hot spot of the semiconductor structure and a second temperature sensor is located at a cold spot of the semiconductor structure. A control block is configured to control current flow through the semiconductor structure. For example, the control block is configured to cut off the current flow through the semiconductor structure when a temperature at the hot spot exceeds a first predefined threshold or when a temperature difference between the temperature at the hot spot and a temperature at the cold spot exceeds a second predefined threshold. | 2015-01-29 |
20150028338 | METHOD FOR MANUFACTURING X-RAY FLAT PANEL DETECTOR AND X-RAY FLAT PANEL DETECTOR TFT ARRAY SUBSTRATE - A common interconnect ring is provided at a periphery of a portion used to form a TFT array of an X-ray flat panel detector, and an X-ray flat panel detector TFT array substrate connected to signal lines and scanning lines via pairs of two protection diodes connected in parallel and having mutually-reverse polarities is manufactured. When inspecting the X-ray flat panel detector TFT array substrate, the same reference bias voltage as the amplifier of a detection circuit is applied from an external voltage application pad provided at the vicinity of a connection unit for the common interconnect ring and the protection diodes on the same side of the signal lines, a signal is provided to a scanning line connection pad to switch the thin film transistor ON, and an electrical signal flowing through the signal line is read from a signal line connection pad. | 2015-01-29 |
20150028339 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC DEVICE - A semiconductor device including: one or more pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors. | 2015-01-29 |
20150028340 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - Source wires having a semiconductor film thereunder are formed wide within a range that does not overlap pixel electrodes formed later. Thereafter, a resist pattern for use in patterning the pixel electrodes is formed so as to overlap edge portions of the source wires, and etching using the resist pattern as a mask is performed, whereby the pixel electrodes are formed, and in addition, the edge portions of the source wires are removed, whereby a structure in which the semiconductor film has a portion projecting beyond the source wires on both sides is formed. | 2015-01-29 |
20150028341 | Array Substrate, Display Device, and Method for Manufacturing the Array Substrate - An array substrate includes a substrate and data lines and scan lines arranged on the substrate, The data lines and the scan lines define plural pixel regions. A thin film transistor is arranged in each pixel region and includes a gate electrode, a source electrode, a drain electrode, and an active region. The gate electrode is arranged above the active region. The source electrode and the drain electrode are arranged at two opposite sides of the active region respectively. A light shielding metal layer is further arranged in each pixel region. The light shielding metal layer and the data lines are arranged in the same layer on the substrate. The light shielding metal layer is arranged under the active region and at least partially overlaps with the active region. The data line is close to the source electrode and does not overlap with the active region at least partially. | 2015-01-29 |
20150028342 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE - An array substrate, a manufacturing method thereof and a display device are provided, and the array substrate comprises: a substrate ( | 2015-01-29 |
20150028343 | DISPLAY PANEL, METHOD FOR FABRICATING THE SAME AND DISPLAY DEVICE - A display panel is discloses. A gate line and a gate connection line of an array substrate are disposed perpendicular to each other. A passivation layer is formed on a side of a source electrode or a drain electrode of the array substrate which is close to the color filter substrate. A first via hole is disposed in the passivation layer. A color filter substrate includes a first substrate, and a data line parallel to the gate connection line is formed on a side of the first substrate which is close to the array substrate. A protection layer, a black matrix and a common electrode are sequentially formed on a side of the data line which is close to the array substrate. A second via hole is disposed in a region of the protection layer, the black matrix and the common electrode which corresponds to the data line. A first end of a conductive spacer is connected to the source electrode or the drain electrode by way of the first via hole, a second end of the conductive spacer is connected to the data line by way of the second via hole. A method for fabricating a display panel and a display device are further disclosed. | 2015-01-29 |
20150028344 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC DEVICE - A pixel includes a load, a transistor which controls a current supplied to the load, a storage capacitor, and first to fourth switches. By inputting a potential in accordance with a video signal into the pixel after the threshold voltage of the transistor is held in the storage capacitor, and holding a voltage of the sum of the threshold voltage and the potential, variations of a current value caused by variations of threshold voltage of a transistor can be suppressed. Consequently, a predetermined current can be supplied to the load such as a light-emitting element. Further, by changing the potential of a power supply line, a display device with a high duty ratio can be provided. | 2015-01-29 |
20150028345 | TRANSISTOR HAVING METAL DIFFUSION BARRIER AND METHOD OF MAKING THE SAME - A transistor includes a substrate, a channel layer over the substrate, an active layer over the channel layer, a metal diffusion barrier over the active layer, and a gate over the metal diffusion barrier. The active layer has a band gap discontinuity with the channel layer. | 2015-01-29 |
20150028346 | ALUMINUM NITRIDE BASED SEMICONDUCTOR DEVICES - Semiconductor structures and techniques are described which enable forming aluminum nitride (AIN) based devices by confining carriers in a region of AIN by exploiting the polar nature of AIN materials. Embodiments of AIN transistors utilizing polarization-based carrier confinement are described. | 2015-01-29 |
20150028347 | LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING - Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material. | 2015-01-29 |
20150028348 | FORMING EMBEDDED SOURCE AND DRAIN REGIONS TO PREVENT BOTTOM LEAKAGE IN A DIELECTRICALLY ISOLATED FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE - Approaches for isolating source and drain regions in an integrated circuit (IC) device (e.g., a fin field effect transistor (finFET)) are provided. Specifically, the FinFET device comprises a gate structure formed over a finned substrate; an isolation oxide beneath an active fin channel of the gate structure; an embedded source and a drain (S/D) formed adjacent the gate structure and the isolation oxide; and an epitaxial (epi) bottom region of the embedded S/D, the epi bottom region counter doped to a polarity of the embedded S/D. The device further includes a set of implanted regions implanted beneath the epi bottom region, wherein the set of implanted regions may be doped and the epi bottom region undoped. In one approach, the embedded S/D comprises P++ doped Silicon Germanium (SiGe) for a p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) and N++ Silicon Nitride (SiN) for a n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET). | 2015-01-29 |
20150028349 | METHOD TO INDUCE STRAIN IN 3-D MICROFABRICATED STRUCTURES - Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height. | 2015-01-29 |
20150028350 | Controlled Ion Implantation Into Silicon Carbide Using Channeling And Devices Fabricated Using Controlled Ion Implantation Into Silicon Carbide Using Channeling - Methods of forming a semiconductor structure include the use of channeled implants into silicon carbide crystals. Some methods include providing a silicon carbide layer having a crystallographic axis, heating the silicon carbide layer to a temperature of about 300° C. or more, implanting dopant ions into the heated silicon carbide layer at an implant angle between a direction of implantation and the crystallographic axis of less than about 2°, and annealing the silicon carbide layer at a time-temperature product of less than about 30,000° C.-hours to activate the implanted ions. | 2015-01-29 |
20150028351 | Methods of Forming Buried Junction Devices in Silicon Carbide Using Ion Implant Channeling and Silicon Carbide Devices Including Buried Junctions - A semiconductor device structure according to some embodiments includes a silicon carbide substrate having a first conductivity type, a silicon carbide drift layer having the first conductivity type on the silicon carbide substrate and having an upper surface opposite the silicon carbide substrate, and a buried junction structure in the silicon carbide drift layer. The buried junction structure has a second conductivity type opposite the first conductivity type and has a junction depth that is greater than about one micron. | 2015-01-29 |
20150028352 | SEMICONDUCTOR DEVICE - [Object] To provide a semiconductor device with which an increase in on-resistance can be suppressed even if a voltage is continuously applied for a long period of time across a source and a drain in a gate-off state. | 2015-01-29 |
20150028353 | Schottky Barrier Detection Devices Having a 4H-SiC n-Type Epitaxial Layer - A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12°; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×10 | 2015-01-29 |
20150028354 | Silicon Carbide Devices Having Smooth Channels - Methods of forming silicon carbide power devices are provided. An n | 2015-01-29 |
20150028355 | Method of Forming A Semiconductor Device - A semiconductor device having dislocations and a method of fabricating the semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate having an isolation feature therein and two gate stacks overlying the substrate, wherein one of the gate stacks is atop the isolation feature. The method further includes performing a pre-amorphous implantation process on the substrate. The method further includes forming a stress film over the substrate. The method also includes performing an annealing process on the substrate and the stress film. | 2015-01-29 |
20150028356 | LIGHT EMITTING DIODE HAVING MULTI-JUNCTION STRUCTURE AND METHOD OF FABRICATING THE SAME - Disclosed herein is a light emitting diode having a multi-junction structure and a method of fabricating the same. In the light emitting diode, each light emitting structure has a column shape and includes two light emitting layers centered on a p-type semiconductor layer. In addition, a p-type electrode is formed on a side surface of the p-type semiconductor layer, and a p-type electrode is formed through formation and removal of a sacrificial layer. Through this process, the p-type electrode can be formed as a side electrode. | 2015-01-29 |
20150028357 | PACKAGE STRUCTURE OF AN OPTICAL MODULE - This invention relates to a package structure of an optical module. A light emitting and light receiving chips are disposed on a light emitting and light receiving region of the substrate, respectively. Two encapsulating gels cover the light emitting chip and the light receiving chip, respectively, and form a first and a second hemispherical lens portions on the light emitting chip and the light receiving chip, respectively. A cover is affixed on the substrate and each of the encapsulating gels and has a light emitting hole and a light receiving hole, wherein the first and the second lens portions are accommodated, respectively. An engaging means is formed on an adjacent surface between each encapsulating gels and the cover in a horizontal direction. Thereby, the package structure of the optical module of the present invention increases the connection region between each encapsulating gels and the cover to enhance the engagement. | 2015-01-29 |
20150028358 | PACKAGE STRUCTURE OF AN OPTICAL MODULE - The present invention relates to a package structure of an optical module. The light emitting chip and the light receiving chip are disposed on the light emitting region and the light receiving region of the substrate, respectively. Two encapsulating gels are coated on the light emitting chip and the light receiving chip to form a first and a second hemispherical lens portions thereon, respectively. A cover is affixed on the substrate and each of the encapsulating gels and has a light emitting hole and a light receiving hole, where the first and second lens portions are accommodated, respectively. In this way, the package structure of an optical module of the present invention can be made with the encapsulating gels of different curvatures according to different needs to improve the luminous efficiency of the light emitting chip effectively and to improve the reception efficiency of the light receiving chip. | 2015-01-29 |
20150028359 | PACKAGE STRUCTURE OF AN OPTICAL MODULE - This invention relates to an optical module package structure. A substrate is defined with a light receiving region and a light emitting region. A light receiving chip and a light emitting chip are disposed on the light receiving region and the light emitting region of the substrate, respectively. An electronic unit is disposed on the substrate and electrically connected to the light emitting chip. Two encapsulating gels are coated on each of the chips and the electronic unit. A cover is disposed on the substrate and has a light emitting hole and a light receiving hole, located above the light emitting chip and the light receiving chip, respectively. In this way, the package structure of the optical module of the present invention integrates passive components, functional ICs or dies into a module, and the optical module provides the functions of current limiting or function adjustment. | 2015-01-29 |
20150028360 | PACKAGE STRUCTURE OF OPTICAL MODULE - A package structure of an optical module includes: a substrate defined with a light-emitting region and a light-admitting region; a light-emitting chip disposed at the light-emitting region of the substrate; a light-admitting chip disposed at the light-admitting region of the substrate; two encapsulants for enclosing the light-emitting chip and the light-admitting chip, respectively; and a shielding layer formed on the substrate and the encapsulants and having a light-emitting hole and a light-admitting hole, wherein the light-emitting hole and the light-admitting hole are positioned above the light-emitting chip and the light-admitting chip, respectively. Accordingly, the optical module package structure simplifies a packaging process and cuts manufacturing costs. | 2015-01-29 |
20150028361 | OPTOELECTRONIC SEMICONDUCTOR DEVICE - An optoelectronic semiconductor device includes at least one radiation-emitting and/or radiation-receiving semiconductor chip including a radiation passage surface and a mounting surface opposite the radiation passage surface, wherein the mounting surface includes a first electrical contact structure and a second electrical contact structure electrically insulated from the first electrical contact structure, and wherein the radiation passage surface is free of contact structures, a reflective sheath surrounding the at least one semiconductor chip at least in sections, and a protective sheath surrounding the at least one semiconductor chip and/or the reflective sheath at least in sections. | 2015-01-29 |
20150028362 | ADHESIVE WAFER BONDING WITH CONTROLLED THICKNESS VARIATION - A method and structure for forming an array of micro devices is disclosed. An array of micro devices is formed over an array of stabilization posts included in a stabilization layer. The stabilization layer is bonded to a spacer side of a carrier substrate. The spacer side of the carrier substrate includes raised spacers extending from a spacer-side surface of the carrier substrate. | 2015-01-29 |
20150028363 | CHIP-ON-FILM PACKAGE AND DISPLAY DEVICE INCLUDING THE SAME - A chip-on-film package includes a base film including a bending area, an integrated circuit chip at an upper surface of the base film, a first line at the upper surface of the base film and overlapping the bending area, a second line at a lower surface of the base film and overlapping the bending area, a via pattern penetrating the base film to electrically couple the first line and the second line, and a common line coupled to the first line and to the integrated circuit chip, wherein at least a portion of the first line does not overlap at least a portion of the second line in a plan view. | 2015-01-29 |