04th week of 2016 patent applcation highlights part 62 |
Patent application number | Title | Published |
20160027923 | SEMICONDUCTOR DEVICE - A transistor having high field-effect mobility is provided. In order that an oxide semiconductor layer through which carriers flow is not in contact with a gate insulating film, a buried channel structure in which the oxide semiconductor layer through which carriers flow is separated from the gate insulating film is employed. Specifically, an oxide semiconductor layer having high conductivity is provided between two oxide semiconductor layers. Further, an impurity element is added to the oxide semiconductor layer in a self-aligned manner so that the resistance of a region in contact with an electrode layer is reduced. Further, the oxide semiconductor layer in contact with the gate insulating layer has a larger thickness than the oxide semiconductor layer having high conductivity. | 2016-01-28 |
20160027924 | Semiconductor Device and Method for Evaluating Semiconductor Device - A semiconductor layer with a low density of trap states is provided. A transistor with stable electrical characteristics is provided. A transistor having high field-effect mobility is provided. A semiconductor device including the transistor is provided. A method for evaluating a semiconductor layer is provided. A method for evaluating a transistor is provided. A method for evaluating a semiconductor device is provided. Provided is, for example, a semiconductor layer with a low defect density which can be used for a channel formation region of a transistor, a transistor including a semiconductor layer with a low defect density in a channel formation region, or a semiconductor device including the transistor. | 2016-01-28 |
20160027925 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device has a p-type metal oxide semiconductor layer; a source electrode connected with the p-type metal oxide semiconductor layer; a drain electrode connected with the p-type metal oxide semiconductor layer; and a gate electrode arranged to oppose to a part of the p-type metal oxide semiconductor layer. The gate electrode and the drain electrode are separated from each other in a top view. | 2016-01-28 |
20160027926 | SEMICONDUCTOR DEVICE - A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide insulating layer over the gate insulating layer, an oxide semiconductor layer being above and in contact with the oxide insulating layer and overlapping with the gate electrode layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The gate insulating layer includes a silicon film containing nitrogen. The oxide insulating layer contains one or more metal elements selected from the constituent elements of the oxide semiconductor layer. The thickness of the gate insulating layer is larger than that of the oxide insulating layer. | 2016-01-28 |
20160027927 | THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND ARRAY SUBSTRATE - A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor comprises: a gate electrode ( | 2016-01-28 |
20160027928 | CONNECTING STRUCTURE AND METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE - A connecting structure includes: a Si substrate; a nanocarbon material formed above the Si substrate; and an electrode electrically connected to the nanocarbon material, wherein a molecular material having a doping function is inserted between the Si substrate and the nanocarbon material. With this configuration, a highly-reliable connecting structure and a method for manufacturing the same are obtained which realize, even though using the nanocarbon material, a sufficiently low contact resistance between the nanocarbon material and the electrode. | 2016-01-28 |
20160027929 | PERFECTLY SYMMETRIC GATE-ALL-AROUND FET ON SUSPENDED NANOWIRE - A semiconductor device including a plurality of suspended nanowires and a gate structure that is present on a channel region portion of the plurality of suspended nanowires. The gate structure includes a uniform length extending from an upper surface of the gate structure to the base of the gate structure. A dielectric spacer having a graded composition is present in direct contact with the gate structure. The dielectric spacer having a uniform length extending from an upper surface of the gate structure to the base of the gate structure. Source and drain regions are present on source and drain region portions of the plurality of suspended nanowires. | 2016-01-28 |
20160027930 | PIXEL ARRAY STRUCTURE AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE - A pixel array structure and manufacturing method thereof, an array substrate and a display device are provided. The manufacturing method of the pixel array structure includes: forming a doped active layer over an active layer, the doped active layer having a portion with a larger thickness and a portion with a smaller thickness; forming a source/drain metal layer on the doped active layer and the active layer; conducting an etching process on the source/drain metal layer, so as to form a source electrode and a drain electrode, one of which partially covers the portion of the doped active layer with a larger thickness; conducting an etching process on the doped active layer and the active layer in a region between the source electrode and the drain electrode, so as to forming an optimized channel. With the manufacturing method, the on-state current of a channel of a thin film transistor can be raised. | 2016-01-28 |
20160027931 | Thin Film Transistor and Manufacturing Method Thereof, Array Substrate, and Display Apparatus - The present invention provides a thin film transistor and a manufacturing method thereof, an array substrate, and a display apparatus. The thin film transistor of the present invention comprises a gate, a gate insulation layer, a semiconductor active region, and a source and a drain connected with the semiconductor active region, and further comprises a surface charge transfer layer in contact with the semiconductor active region, the surface charge transfer layer is located above or below the semiconductor active region, and is used for causing the semiconductor active region to generate a large number of holes or electrons therein without changing the lattice structure of the semiconductor active region. In the thin film transistor, charge transfer occurs between the semiconductor active region and the surface charge transfer layer so that the doped semiconductor active region is formed, thus the performance of the thin film transistor is significantly improved. | 2016-01-28 |
20160027932 | Solar Cells Having a Novel Bus Bar Structure - A solar cell ( | 2016-01-28 |
20160027933 | Soldering System - This disclosure relates to a soldering system containing a soldering apparatus and a heating apparatus. The soldering apparatus includes a heating plate having a body defining a plurality of first air exits, each first air exit extending through the body of the heating plate and the heating plate being configured to supply hot air through the first air exits; a cover disposed on the heating plate, the cover and the heating plate defining a hot air chamber; a plurality of axially movable positioning shafts extending though the body of the heating plate, in which each shaft has a first end and a second end, the first end is in the hot air chamber, and the second end is outside the hot air chamber; and a conduit attached to the cover, the conduit being configured to supply hot air to the hot air chamber. | 2016-01-28 |
20160027934 | ELECTRODES COMPRISING NANOSTRUCTURED CARBON - An electrode includes a network of compressed interconnected nanostructured carbon particles such as carbon nanotubes. Some nanostructured carbon particles of the network are in electrical contact with adjacent nanostructured carbon particles. Electrodes may be used in various devices, such as capacitors, electric arc furnaces, batteries, etc. A method of producing an electrode includes confining a mass of nanostructured carbon particles and densifying the confined mass of nanostructured carbon particles to form a cohesive body with sufficient contacts between adjacent nanostructured carbon particles to provide an electrical path between at least two remote points of the cohesive body. The electrodes may be sintered to induce covalent bonding between the nanostructured carbon particles at contact points to further enhance the mechanical and electrical properties of the electrodes. | 2016-01-28 |
20160027935 | METHOD FOR PRODUCING STACKED ELECTRODE AND METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE - A method for producing a stacked electrode of an embodiment includes preparing a multi-layered graphene film, applying a dispersion liquid of metal nanowires onto the multi-layered graphene film, and removing a solvent from the dispersion liquid to prepare a metal wiring on the multi-layered graphene film. | 2016-01-28 |
20160027936 | SOLAR CELL AND SOLAR CELL MODULE CONTAINING THE SAME - A solar cell includes a photovoltaic substrate, a front electrode, and a back electrode. The back electrode is disposed on a back surface of the photovoltaic substrate and includes a collector layer and a bus electrode. The collector layer has at least one collector opening having a main opening portion and an expansive opening portion. The expansive opening portion has an outer expansive edge which is at least partially arcuate. The expansive opening portion has a width larger than a width of the main opening portion. The bus electrode includes at least one bus electrode segment corresponding in position to the collector opening. The at least one bus electrode segment is exposed from the at least one collector opening, and has an end portion exposed from the expansive opening portion. | 2016-01-28 |
20160027937 | SEMICONDUCTOR MATERIALS AND METHOD FOR MAKING AND USING SUCH MATERIALS - Novel compounds having a formula M | 2016-01-28 |
20160027938 | Tetradymite Layer Assisted Heteroepitaxial Growth And Applications - A multilayer stack including a substrate, an active layer, and a tetradymite buffer layer positioned between the substrate and the active layer is disclosed. A method for fabricating a multilayer stack including a substrate, a tetradymite buffer layer and an active layer is also disclosed. Use of such stacks may be in photovoltaics, solar cells, light emitting diodes, and night vision arrays, among other applications. | 2016-01-28 |
20160027939 | METHOD AND SUBSTRATES FOR MAKING PHOTOVOLTAIC CELLS - Methods of and apparatuses for making a photovoltaic cell are provided. The photovoltaic cell is able to have a substrate made of a composite material. The composite material is able to be formed by mixing a binder and a physical property enhancing material to form a mixer. The binder is able to be pitch, such as mesophase pitch. The physical property enhancing material is able to be fiber glass. The substrate of the photovoltaic cell is able to be flexible, such that the photovoltaic cell is able to be applied on various surfaces. | 2016-01-28 |
20160027940 | QUANTUM WELL WAVEGUIDE SOLAR CELLS AND METHODS OF CONSTRUCTING THE SAME - A material structure and device design are provided that produce efficient photovoltaic power conversion. Materials of different energy gap are combined in the depletion region of a semiconductor junction. A wider energy gap barrier layer is positioned to reduce the diode dark current by suppressing both carrier injection across the junction and recombination rates within the junction. Light guiding layers are placed above and below the active region of the device in order to enhance optical absorption in the lower energy gap material. | 2016-01-28 |
20160027941 | MULTILAYER FILM, BACK SHEET FOR SOLAR CELL MODULE, AND SOLAR CELL MODULE - Disclosed is a multilayer film including a polyester support body; a first adhesive layer laminated on at least one surface of the polyester support body; and a second adhesive layer laminated on a side opposite to the polyester support body through the first adhesive layer, in which an average film thickness of the polyester support body is in a range of 50 μm to 300 μm, the first adhesive layer includes a modified polyolefin resin which is a copolymer of ethylene, (meth)acrylic acid ester, and acid anhydride, the second adhesive layer includes an olefin resin, and a sum of average film thicknesses of the first adhesive layer and the second adhesive layer is in a range of 0.001 times to 0.3 times the average film thickness of the polyester support body. The multilayer film is a multilayer film in which an adhesive layer having both adhesiveness to EVA and adhesiveness to a polyester support body is included, curling of the multilayer film is suppressed, and blocking is suppressed. | 2016-01-28 |
20160027942 | ENCAPSULANTS FOR SOLAR BATTERY, AND SOLAR BATTERY MODULE - A pair of encapsulants for encapsulating a solar battery cell including incident surface side encapsulants arranged on an incident surface side of solar light of the solar battery cell, and back surface side encapsulants arranged on a back surface side of the solar battery cell, in which the incident surface side encapsulants contain an ethylene-vinyl acetate copolymer and an epoxy compound, and the back surface side encapsulants contain an ethylene-vinyl acetate copolymer and an acid accepting agent formed of a metal compound. | 2016-01-28 |
20160027943 | CONCENTRATING PHOTOVOLTAIC SKYLIGHT BASED ON HOLOGRAMS AND/OR METHODS OF MAKING THE SAME - Improved building-integrated photovoltaic (BIPV) systems according to certain example embodiments may include concentrated photovoltaic skylights or other windows in which holographic optical elements (HOEs) are provided. The HOEs are formed on or in a substantially planar glass substrate, e.g., at light coupling locations, and they help form a holographic projection of light in a desired wavelength range on a photovoltaic module. The photovoltaic module may, for example, be connected to an outer edge of the substrate in certain example embodiments. Holographically projected light may propagate through the substrate in accordance with the principles of total internal reflection (TIR), which may be somewhat lossy in some cases. A lens provided between the light source (e.g., the sun) may help re-orient the light in a desired direction so as to improve the efficiency of the HOEs. | 2016-01-28 |
20160027944 | ELECTRICAL CONNECTORS OF BUILDING INTEGRABLE PHOTOVOLTAIC MODULES - Provided are novel building integrable photovoltaic (BIP) modules and methods of fabricating thereof. A module may be fabricated from an insert having one or more photovoltaic cells by electrically interconnecting and mechanically integrating one or more connectors with the insert. Each connector may have one or more conductive elements, such as metal sockets and/or pins. At least two of all conductive elements are electrically connected to the photovoltaic cells using, for example, bus bars. These and other electrical components are electrically insulated using a temperature resistant material having a Relative Temperature Index (RTI) of at least about 115° C. The insulation may be provided before or during module fabrication by, for example, providing a prefabricated insulating housing and/or injection molding the temperature resistant material. The temperature resistant material and/or other materials may be used for mechanical integration of the one or more connectors with the insert. | 2016-01-28 |
20160027945 | SYSTEMS AND METHODS FOR WIRING SOLAR PANEL ARRAYS - A solar power system may include a combiner module, one or more rows of solar panels connected to the combiner module, and one or more wiring circuits connecting the one or more rows of solar panels to the combiner module. Each circuit may include an inter-module wiring arrangement that connects individual solar panels to each other in series, and a return wiring arrangement that connects the inter-module wiring arrangement to the combiner module. Each inter-module wiring arrangement may be arranged such that at least some solar panels are wired to other solar panels in the same row in a substantially alternating manner, such that non-adjacent solar panels in the same row are wired directly in series to each other. This arrangement may reduce the total length of harness wires needed to connect the one or more panel rows to the combiner box, as compared with conventional wiring schemes. | 2016-01-28 |
20160027946 | OPTICAL DEVICE - An optical device is described, including a switching layer that includes an anisotropic light-emitting material for absorbing and radiating light and switches alignment of the light-emitting material, an alignment layer in contact with the switching layer, an optical energy conversion means that converts the radiated light into at least one energy form selected from heat and electricity, and a light guide system that is in physical contact with the optical energy conversion means and guides the radiated light to the optical energy conversion means. The switching layer controls transmission of light through the optical device. The alignment layer includes 80 wt % or more of a polyorganosiloxane. | 2016-01-28 |
20160027947 | FREE-STANDING METALLIC ARTICLE FOR SEMICONDUCTORS - A free-standing metallic article, and method of making, is disclosed in which the metallic article is electroformed on an electrically conductive mandrel. The mandrel has an outer surface with a preformed pattern, wherein at least a portion of the metallic article is formed in the preformed pattern. The metallic article is separated from the electrically conductive mandrel, which forms a free-standing metallic article that may be coupled with the surface of a semiconductor material for a photovoltaic cell. | 2016-01-28 |
20160027948 | INTEGRATED THIN FILM SOLAR CELL INTERCONNECTION - Photovoltaic modules may include multiple flexible thin film photovoltaic cells electrically connected in series, and laminated to a substantially transparent top sheet having a conductive grid pattern facing the cells. Methods of manufacturing photovoltaic modules including integrated multi-cell interconnections are provided. Methods may include steps of coordinating, integrating, and registering multiple rolls of substrates in continuous processes. | 2016-01-28 |
20160027949 | BLACK BODY INFRARED ANTENNA ARRAY - A solar antenna array may comprise an emitter that may convert visible light into black body infrared radiation, and an array of antennas that may capture and convert the black body radiation into electrical power. Methods for constructing the solar antenna array may include using thermal insulation, high-gain low-e glass, and gasses with minimal heat transfer. A black body infrared antenna array may augment the electrical power from a visible light antenna array by converting its waste heat into additional electrical power. | 2016-01-28 |
20160027950 | Methods Of Low-Temperature Fabrication Of Crystalline Semiconductor Alloy On Amorphous Substrate - Methods are discussed for producing single-crystal shapes on amorphous materials. A first method deposits a layer of Germanium-Tin (GeSn) alloy comprising between three and sixteen atomic-percent tin on material incapable of seeding crystal formation, the layer is photolithographically defined into a shape having a point having radius less than 100 nanometers; and the shape is annealed by heating to a temperature below 450 degrees Celsius. A second method also photolithographically defines a shape on a layer of GeSn, then uses a laser to heat and crystalize seed spot on the shape; and anneals the shape by heating and thereby crystalizing additional GeSn alloy of the shape. In embodiments, the crystalized GeSn serves to seed InGaP and/or InGaAs layers that may serve together with the GeSn as layers of a tandem photovoltaic cell. | 2016-01-28 |
20160027951 | SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a semiconductor substrate doped with impurities of a first conductive type, a front surface field region disposed at a front surface of the substrate and doped with impurities of the first conductive type at a concentration higher than those of the substrate, a tunnel layer disposed on a back surface of the substrate and formed of a dielectric material, an emitter region disposed at a first portion of a back surface of the tunnel layer and doped with impurities of a second conductive type opposite the first conductive type, and a back surface field region disposed at a second portion of the back surface of the tunnel layer and doped with impurities of the first conductive type at a concentration higher than those of the substrate. | 2016-01-28 |
20160027952 | Pin Diode and Manufacturing Method Thereof, and X-Ray Detector Using Pin Diode and Manufacturing Method Thereof - Provided herein is a PIN diode, a manufacturing method thereof, an x-ray detector using the PIN diode, and a manufacturing method thereof, the PIN diode manufacturing method according to an embodiment of the present disclosure including forming a lower electrode layer, and forming a lower electrode by etching the lower electrode layer; depositing a PIN layer for formation of a PIN structure above the lower electrode, and depositing an upper electrode layer for formation of the upper electrode above the PIN layer; forming a photo resist pattern above the upper electrode layer, and forming the upper electrode by etching the upper electrode layer having the photo resist pattern as a mask; forming the PIN structure by etching the PIN layer; etching an edge area of the upper electrode having the photo resist pattern as a mask; and removing the photo resist pattern. | 2016-01-28 |
20160027953 | SINGLE-STEP METAL BOND AND CONTACT FORMATION FOR SOLAR CELLS - A method for fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a first metal layer on the dielectric region. The method can also include forming a second metal layer on the first metal layer and locally heating a particular region of the second metal layer, where heating includes forming a metal bond between the first and second metal layer and forming a contact between the first metal layer and the solar cell structure. The method can include forming an adhesive layer on the first metal layer and forming a second metal layer on the adhesive layer, where the adhesive layer mechanically couples the second metal layer to the first metal layer and allows for an electrical connection between the second metal layer to the first metal layer. | 2016-01-28 |
20160027954 | System and Method for Thin Film Photovoltaic Modules and Back Contact for Thin Solar Cells - The present disclosure provides improved thin film photovoltaic devices and related methods of fabrication. More particularly, the present disclosure provides improved CdTe photovoltaic devices and related fabrication methods. Disclosed is a novel thin film photovoltaic device and means for its fabrication. An exemplary device includes a metal oxide layer between the absorber layer and the rear electrode, resulting in an ohmic back contact and having improved device stability. The metal oxide layer can include at least one of silver oxide or copper oxide, and may additionally contain nickel oxide, molybdenum oxide, and/or vanadium oxide. The present disclosure is directed towards formation of a ohmic back contact for solar cells, the back contact having improved stability. In certain embodiments, the present disclosure provides for an ohmic contact to p-type II-VI semiconductors, and to the fabrication of solar cells having improved stability, and to solar panels incorporating such back contact schemes. | 2016-01-28 |
20160027955 | Microwave-Annealed Indium Gallium Zinc Oxide Films and Methods of Making the Same - A microwave-annealed indium gallium zinc oxide (IGZO) film and methods of making the same are disclosed. The methods may comprise: depositing an IGZO film onto a substrate; and microwave annealing the IGZO film to produce a microwave-annealed IGZO film. | 2016-01-28 |
20160027956 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT - Provided are a highly reliable semiconductor light-emitting element having uniform protrusions that are arranged regularly and have the same size and a method of producing the same. The method of producing a semiconductor light-emitting element according to the present invention includes: forming a mask layer having a plurality of openings that are arranged at equal intervals along a crystal axis of a semiconductor structure layer on the surface of the semiconductor structure layer; performing a plasma treatment on the surface of the semiconductor structure layer exposed from the openings in the mask layer; removing the mask layer; and wet-etching the surface of the semiconductor structure layer to form protrusions on the surface of the semiconductor structure layer. | 2016-01-28 |
20160027957 | LIGHT EMITTING DEVICES WITH BUILT-IN CHROMATICITY CONVERSION AND METHODS OF MANUFACTURING - Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device. | 2016-01-28 |
20160027958 | GROUP I-III-VI MATERIAL NANO-CRYSTALLINE CORE AND GROUP I-III-VI MATERIAL NANO-CRYSTALLINE SHELL PAIRING - Nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, and methods of fabricating nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, are described. In an example, a semiconductor structure includes a nano-crystalline core composed of a group I-III-VI semiconductor material. A nano-crystalline shell composed of a second, different, group I-III-VI semiconductor material at least partially surrounds the nano-crystalline core. | 2016-01-28 |
20160027959 | Method for Producing an Optoelectronic Semiconductor Chip and Optoelectronic Semiconductor Chip - In at least one embodiment, a method is designed to produce optoelectronic semiconductor chips. A carrier assembly, which is a sapphire wafer, is produced. A semiconductor layer sequence is applied to the carrier assembly. The carrier assembly and the semiconductor layer sequence are divided into the individual semiconductor chips. The dividing is implemented by producing a multiplicity of selectively etchable material modifications in the carrier assembly in separation region(s) by focused, pulsed laser radiation. The laser radiation has a wavelength at which the carrier assembly is transparent. The dividing includes wet chemically etching the material modifications, such that the carrier assembly is singulated into individual carriers for the semiconductor chips solely by the wet chemical etching or in combination with a further material removal method. | 2016-01-28 |
20160027960 | LIGHT-EMITTING DEVICES AND DISPLAYS WITH IMPROVED PERFORMANCE - Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes an emissive material disposed between a first electrode, and a second electrode. Various embodiments include a device having a peak external quantum efficiency of at least about 2.2%; a device that emits light having a CIE color coordinate of x greater than 0.63; a device having an external quantum efficiency of at least about 2.2 percent when measured at a current density of 5 mA/cm | 2016-01-28 |
20160027961 | METHODS AND DEVICES FOR SOLID STATE NANOWIRE DEVICES - Solid state sources offers potential advantages including high brightness, electricity savings, long lifetime, and higher color rendering capability, when compared to incandescent and fluorescent light sources. To date however, many of these advantages, however, have not been borne out in providing white LED lamps for general lighting applications. The inventors have established that surface recombination through non-radiative processes results in highly inefficient electrical injection. Exploiting in-situ grown shells in combination with dot-in-a-wire LED structures to overcome this limitation through the effective lateral confinement offered by the shell the inventors have demonstrated core-shell dot-in-a-wire LEDs, with significantly improved electrical injection efficiency and output power, providing phosphor-free InGaN/GaN nanowire white LEDs operating with milliwatt output power and color rendering indices of 95-98. Additionally, the inventors demonstrate efficient UV nanowire LEDs for medical applications as well as the non-degraded growth of nanowire LEDs on amorphous substrates. | 2016-01-28 |
20160027962 | UV LIGHT EMITTING DEVICES AND SYSTEMS AND METHODS FOR PRODUCTION - A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius, forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius, forming an n-type layer comprising aluminum gallium nitride layer upon the second UV transmissive layer, forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer, and forming a p-type nitride layer upon the one or more quantum well structures. | 2016-01-28 |
20160027963 | OPTICAL ELEMENTS AND ELECTRONIC DEVICES INCLUDING THE SAME - An optical element includes a plurality of nanowires disposed in the form of an array and a light emitting material disposed on the nanowires, where the nanowires are longitudinally aligned in the array to linearly polarize at least a portion of light emitted from the light emitting material, and an electronic device includes the optical element. | 2016-01-28 |
20160027964 | UV LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity. | 2016-01-28 |
20160027965 | LIGHT-EMITTING ELEMENT - A light-emitting element comprises a light-emitting stack comprising an active layer, a first insulative layer having a first refractive index on the light-emitting stack, a second insulative layer having a second refractive index on the first insulative layer, and a transparent conducting structure having a third refractive index on the second insulative layer, wherein the second refractive index is between the first refractive index and the third refractive index, and the first refractive index is smaller than 1.4. | 2016-01-28 |
20160027966 | Porous Quantum Dot Carriers - Embodiments of a quantum dot carrier, a method of making a quantum dot carrier, and a quantum dot enhancement film are described. The quantum dot carrier includes a porous material, a plurality of quantum dots and a dispersing material for dispersing the quantum dots within the porous material. The porous material includes a plurality of pores while the quantum dots are disposed within the plurality of pores. | 2016-01-28 |
20160027967 | Stacked Structure, Input/output Device, Information Processing Device, and Manufacturing Method of Stacked Structure - A novel stacked structure that is highly convenient or reliable is provided. A method for manufacturing a novel stacked structure that is highly convenient or reliable is also provided. Furthermore, a novel semiconductor device is provided. The stacked structure includes first to fifth regions in this order. Each of the first to fifth regions includes a first base and a second base. The first region, the third region, and the fifth region each include a spacer that makes a predetermined distance between the first base and the second base. | 2016-01-28 |
20160027968 | SURFACE MOUNT LIGHT-EMITTING DEVICE - A surface mount light-emitting device of side view and lead frame type can include a casing having a cavity, a first lead frame having a first mounting surface exposed from the cavity, and a second lead frame having a second mounting surface exposed from the cavity. A light-emitting chip can be mounted on one of the first and the second mounting surfaces, which extend in a substantially same level and balanced shapes with respect to each other to be used as external electrodes. An encapsulating resin including at least one phosphor can also encapsulate the light-emitting chip in the cavity. Thus, the disclosed subject matter can provide reliable surface mount light-emitting devices that can be easily mounted on a mounting board with high positional accuracy and can emit various color lights having a high light-emitting intensity using a high brightness chip in a substantially parallel direction to the mounting board. | 2016-01-28 |
20160027969 | LED USING LUMINESCENT SAPPHIRE AS DOWN-CONVERTER - An LED die includes a luminescent sapphire layer affixed to LED semiconductor layers. The luminescent sapphire absorbs a portion of the primary light and down-converts the primary light to emit secondary light. A phosphor layer may be added. The luminescent sapphire may comprise luminescent sapphire particles in a binder forming a mixture deposited over the LED semiconductor layers. Alternatively, the luminescent sapphire comprises a pre-formed tile that is affixed over the LED semiconductor layers. Alternatively, the luminescent sapphire comprises a luminescent sapphire growth substrate on which is epitaxially grown the LED semiconductor layers. After the LED die is formed, the luminescent characteristics of the sapphire maybe adjusted using optical conditioning and/or annealing to tune the die's overall emission. | 2016-01-28 |
20160027970 | Packaging for Ultraviolet Optoelectronic Device - A solution for packaging an optoelectronic device using an ultraviolet transparent polymer is provided. The ultraviolet transparent polymer material can be placed adjacent to the optoelectronic device and/or a device package on which the optoelectronic device is mounted. Subsequently, the ultraviolet transparent polymer material can be processed to cause the ultraviolet transparent polymer material to adhere to the optoelectronic device and/or the device package. The ultraviolet transparent polymer can be adhered in a manner that protects the optoelectronic device from the ambient environment. | 2016-01-28 |
20160027971 | WAVELENGTH CONVERTERS AND METHODS FOR MAKING THE SAME - Disclosed herein are wavelength converters and methods for making the same. The wavelength converters include a single layer of a polymeric matrix material, and one or more types of wavelength converting particles. In some embodiments the wavelength converters include first and second types of wavelength converting particles that are distributed in a desired manner within the single layer of polymeric matrix material. Methods of forming such wavelength converters and lighting devices including such wavelength converters are also disclosed. | 2016-01-28 |
20160027972 | METHOD OF ENCAPSULATING AN OPTOELECTRONIC DEVICE AND LIGHT-EMITTING DIODE CHIP - A method of encapsulating an optoelectronic device includes providing a surface intended to be encapsulated, the surface containing platinum, generating reactive oxygen groups and/or reactive hydroxyl groups on the surface, and depositing a passivation layer by atomic layer deposition on the surface. | 2016-01-28 |
20160027973 | LIGHT-EMITTING DEVICE, PRODUCTION METHOD THEREFOR, AND DEVICE USING LIGHT-EMITTING DEVICE - A light-emitting device, including: a pair of light-transmissive insulator sheets each provided with a light-transmissive electroconductive layer, or a pair of alight-transmissive insulator sheet equipped with light-transmissive electroconductive layers and alight-transmissive insulter sheet free from a light-transmissive electroconductive layer, disposed opposite to each other so as to form a region between the pair; at least one light-emitting semiconductor element each provided with a cathode and an anode which are individually and electrically connected to one of the light-transmissive electroconductive layers, and a light-transmissive elastomer, disposed between the pair of light-transmissive insulator sheets so as to fill the region in combination; wherein the light-transmissive elastomer is present at least locally between the cathode and anode, respectively, of the light-emitting semiconductor element and the light-transmissive electroconductive layers, and the light-transmissive elastomer is also present at concavities of the cathode and anode surfaces. | 2016-01-28 |
20160027974 | Aryl Group-Containing Siloxane Compositions Including Alkaline Earth Metal - An aryl group-containing siloxane composition is formed by introducing an alkaline earth-metal as a part of the reaction product of an organopolysiloxane having at least two alkenyl groups per molecule and an organopolysiloxane having at least two silicon-bonded hydrogen atoms per molecule in the presence of a hydrosilylation catalyst, wherein at least one of the organopolysiloxanes includes an aryl group. The alkaline earth metal may be introduced via a heat stability composition or may alternatively be pre-reacted with the organopolysiloxane having at least two alkenyl groups per molecule. The aryl group-containing siloxane compositions may be utilized as an encapsulating layer for a light emitting device. | 2016-01-28 |
20160027975 | PHOTON EXTRACTION FROM ULTRAVIOLET LIGHT-EMITTING DEVICES - In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent. | 2016-01-28 |
20160027976 | Optoelectronic Semiconductor Device and Method for Producing an Optoelectronic Semiconductor Device - An optoelectronic semiconductor component has at least one semiconductor chip for emitting electromagnetic radiation. The semiconductor chip has at least one side surface and wherein a part of the electromagnetic radiation exits through the side surface during operation of the semiconductor chip. The semiconductor component additionally has at least one deflecting element that is formed to be transmissive to radiation. The deflecting element and the semiconductor chip are arranged one alongside another. The deflecting element is arranged at the side surface of the semiconductor chip. The deflecting element has a material, the index of refraction of which is greater than an average index of refraction of a semiconductor material of the semiconductor chip. | 2016-01-28 |
20160027977 | LIGHT EMITTING DIODE PACKAGE AND LIGHTING DEVICE USING THE SAME - A light emitting diode (LED) package may include a package body provided with a pair of lead frames, and an LED chip mounted on the package body and electrically connected to the lead frames through wire bonding. Each lead frame may include a first reflective layer disposed on a mounting surface on which the LED chip is disposed and a second reflective layer disposed on the first reflective layer. A wire may penetrate through the second reflective layer to be connected to the first reflective layer. Accordingly, the LED package may provide the uniform amount of light by suppressing discoloration of the lead frames, and the manufacturing time of the LED package may be reduced, leading to a reduction in manufacturing costs. | 2016-01-28 |
20160027978 | LIGHT EMITTING DIODE (LED) DIE HAVING STRAP LAYER AND METHOD OF FABRICATION - A light emitting diode (LED) die includes a first-type semiconductor layer, a multiple quantum well (MQW) layer in electrical contact with the first-type semiconductor layer configured to emit electromagnetic radiation, and a second-type semiconductor layer in electrical contact with the multiple quantum well (MQW) layer. The light emitting diode (LED) die also includes a first pad in electrical contact with the first-type semiconductor layer via, and a second pad in electrical contact with the second type semiconductor layer. The light emitting diode (LED) die also includes a strap layer having conductive straps and contact areas located in trenches in the second type semiconductor layer. | 2016-01-28 |
20160027979 | OPTOELECTRONIC COMPONENT AND ELECTRONIC DEVICE HAVING AN OPTOELECTRONIC COMPONENT - An electronic device includes a printed circuit board having a cutout, wherein an optoelectronic component including a housing having an outer surface, the housing has a chip receptacle space at a top side, an optoelectronic semiconductor chip is arranged in the chip receptacle space, the housing has a first soldering contact surface and a second soldering contact surface, the first soldering contact surface and the second soldering contact surface face in the same spatial direction as the outer surface, and the first soldering contact surface and the second soldering contact surface are set back relative to the outer surface, is arranged in the cutout. | 2016-01-28 |
20160027980 | Optoelectronic Semiconductor Chip and Optoelectronic Module - An optoelectronics semiconductor chip has a substrate and a semiconductor body arranged on the substrate and has a semiconductor layer sequence. The semiconductor layer sequence includes an active region arranged between a first semiconductor layer and a second semiconductor layer and is provided to generate or to receive radiation. The first semiconductor layer is electrically conductively connected to a first contact and to a second contact. The first contact is formed on a front side of the substrate, facing the semiconductor body. The second contact is formed on a rear side of the substrate, facing away from the semiconductor body. The first contact and the second contact are electrically conductively connected to each other. | 2016-01-28 |
20160027981 | LED MODULE - An object is to provide an LED module that eliminates the need for providing electrodes between each device and allows LEDs to be arrayed with high density. An LED module includes a substrate, a first frame member, a second frame member disposed outside the first frame member, a plurality of LEDs for producing white light disposed within the first frame member, a phosphor resin disposed within the first frame member, a plurality of LEDs for producing colored light disposed between the first frame member and the second frame member, and electrodes for applying a voltage to the plurality of LEDs for producing the white light, wherein a metal wire to connect the plurality of LEDs for producing the colored light to one another is disposed so as to straddle a part of each of the electrodes. | 2016-01-28 |
20160027982 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A method for manufacturing a light emitting device includes forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate. A dielectric film on a second surface side opposite to the first surface of the multilayer body is formed having first and second openings on a p-side electrode and an n-side electrode. A seed metal on the dielectric film and an exposed surface of the first and second openings form a p-side metal interconnect layer and an n-side metal interconnect layer separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal. A resin is formed in a space from which the seed metal is removed. | 2016-01-28 |
20160027983 | LEAD FRAME AND LIGHT EMITTING DIODE PACKAGE HAVING THE SAME - An exemplary lead frame includes a substrate and a bonding electrode, a first connecting electrode, and a second connecting electrode embedded in the substrate. A top surface of the bonding electrode includes a first bonding surface and a second bonding surface spaced from the first bonding surface. A top surface of the first connecting electrode includes a first connecting surface and a second connecting surface spaced from the first connecting surface. Top surfaces of the bonding electrode, the first connecting electrode and the second connecting electrode are exposed out of the substrate to support and electrically connect with light emitting chips. Light emitting chips can be mounted on the lead frame and electrically connect with each other in parallel or in series; thus, the light emitting chips can be connected with each in a versatile way. | 2016-01-28 |
20160027984 | THERMOELECTRIC CONVERTER AND METHOD FOR PRODUCING THE SAME - Respective thermoelectric elements and respective front surface patterns have an interface therebetween in which metal atoms configuring the thermoelectric elements and metal atoms configuring the front surface pattern are diffused to form an alloy layer. The respective thermoelectric elements and respective back surface patterns have an interface therebetween in which metal atoms configuring the thermoelectric elements and metal atoms configuring the back surface pattern are diffused to form an alloy layer. The respective thermoelectric elements, the respective front surface patterns and the respective back surface patterns are electrically and mechanically connected to each other via the alloy layers. | 2016-01-28 |
20160027985 | THERMOELECTRIC GENERATOR - A thermoelectric generator includes a perovskite dielectric substrate containing Sr and Ti and having electric conductivity by being doped to n-type; an energy filter formed on a top surface of the perovskite dielectric substrate, the energy filter including a first perovskite dielectric film, which contains Sr and Ti, has electric conductivity by being doped to n-type, and has a conduction band at an energy level higher than that of the perovskite dielectric substrate; a first electrode formed in electrical contact with a bottom surface of the perovskite dielectric substrate; and a second electrode formed in electrical contact with a top surface of the energy filter. The thermoelectric generator produces a voltage between the first and second electrodes by the top surface of the energy filter being exposed to a first temperature and the bottom surface of the perovskite dielectric substrate being exposed to a second temperature. | 2016-01-28 |
20160027986 | THERMOELECTRIC ELEMENT, METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A thermoelectric element is provided as follows. First and second semiconductor fin structures are disposed on a semiconductor substrate. Each semiconductor fin structure extends in a first direction, protruding from the semiconductor substrate. First and second semiconductor nanowires are disposed on the first and second semiconductor fin structures, respectively. The first semiconductor nanowires include first impurities. The second semiconductor nanowires include second impurities different from the first impurities. A first electrode is connected to first ends of the first and second semiconductor nanowires. A second electrode is connected to second ends of the first semiconductor nanowires. A third electrode is connected to second ends of the second semiconductor nanowires. | 2016-01-28 |
20160027987 | Circuit Assembly and Method for Controlling a Piezoelectric Transformer - A circuit assembly is used for controlling a piezoelectric transformer having an input capacitance in a first circuit branch. The circuit assembly also includes a second circuit branch for compensating for the input capacitance, preferably by means of a capacitive element, and a differential amplifier having two inputs. The first input is coupled to the first circuit branch and the second input is coupled to the second circuit branch. | 2016-01-28 |
20160027988 | PIEZOELECTRIC MEMBRANE, PIEZOELECTRIC DEVICE, AND INKJET HEAD - An inkjet head includes a substrate that defines a cavity in which ink is stored, a vibrating membrane that is supported by the substrate and that defines the cavity, and a piezoelectric device that is disposed on the vibrating membrane and that changes a volume of the cavity by displacing the vibrating membrane. The piezoelectric device includes a lower electrode, a piezoelectric membrane that is disposed on the lower electrode, and an upper electrode that is disposed on the piezoelectric membrane and that faces the lower electrode with the piezoelectric membrane interposed between the upper electrode and the lower electrode. The piezoelectric membrane includes a columnar structure layer and an amorphous structure layer of a piezoelectric material. The amorphous structure layer is stacked contiguously with the columnar structure layer. | 2016-01-28 |
20160027989 | ROBUST PIEZOELECTRIC FLUID MOVING DEVICES AND METHODS - A method of making a piezoelectric fluid moving device, (e.g., a fan or synthetic jet actuator) includes forming at least a first electrode on a base substrate and disposing a spacer frame about the first electrode. A piezoelectric substrate is placed within the frame and over the first electrode. A cover substrate is located on the spacer frame. The cover substrate and spacer frame are laminated to each other and to the base substrate encapsulating the piezoelectric substrate between the cover substrate and the base substrate for a long life device. | 2016-01-28 |
20160027990 | CRYSTAL VIBRATION DEVICE - A crystal vibration device where a crystal unit is supported on a case substrate in a cantilever manner by first and second conductive adhesive layers. The crystal unit has a length direction and is formed using a rectangular-plate-shaped crystal substrate and A>4.30t+0.16, where A (mm) represents a shorter distance among distances between a central axis of the crystal substrate and end portions of the first and second conductive adhesive layers on a central axis side, and t (μm) represents a thickness of the crystal substrate. | 2016-01-28 |
20160027991 | ULTRASOUND TRANSDUCER AND ULTRASOUND DIAGNOSTIC APPARATUS - An ultrasound transducer that achieves broadband characteristics without degrading the sensitivity of the ultrasound transducer. Piezoelectric element ( | 2016-01-28 |
20160027992 | PACKAGE-IN-PACKAGE SEMICONDUCTOR SENSOR DEVICE - A semiconductor sensor device includes a device substrate, a micro-controller unit (MCU) die attached to the substrate, and a packaged pressure sensor having a sensor substrate and a pressure sensor die. The sensor substrate has a front side with the pressure sensor die attached to it, a back side, and an opening from the front side to the back side. A molding compound encapsulates the MCU die, the device substrate, and the packaged pressure sensor. A back side of the sensor substrate and the opening in the sensor substrate are exposed on an outer surface of the molding compound. | 2016-01-28 |
20160027993 | LEAD TITANATE COATING AND PREPARING METHOD THEREOF - The invention provides a lead titanate coating and a preparing method thereof. According to the method, mixed powder is sprayed on the surface of a matrix, and through polarization, the lead titanate coating is acquired. The mixed powder comprises PbTiO | 2016-01-28 |
20160027994 | MULTILAYER ACOUSTIC IMPEDANCE CONVERTER FOR ULTRASONIC TRANSDUCERS AND METHOD OF FORMING THE SAME - An impedance conversion layer useful for medical imaging ultrasonic transducers comprises a low impedance polymer layer and a high impedance metal layer. These layers are combined with corresponding thicknesses adapted to provide a function of converting from a specific high impedance to specific low impedance, wherein the polymer layer is at the high impedance side and the metal layer is at the low impedance side. The effective acoustic impedance of the polymer and metal layer combination may be adapted to configure an impedance converter in the same way as a quarter wavelength impedance converter, converting from low impedance to high impedance (metal to polymer) or from a high impedance to low impedance (polymer to metal). This structure may be used for front matching with the propagation medium and back matching with an absorber for ultrasonic transducers. | 2016-01-28 |
20160027995 | METHOD FOR PRODUCING A MULTILAYER ELECTROMECHANICAL TRANSDUCER - The invention relates to a process for the production of at least one multilayer electromechanical transducer ( | 2016-01-28 |
20160027996 | METHOD FOR ETCHING PIEZOELECTRIC FILM AND METHOD FOR MANUFACTURING PIEZOELECTRIC ELEMENT - In a method for etching a piezoelectric film and a manufacturing method thereof, a piezoelectric film is formed on a substrate on which a lower electrode is formed, a metal film having a thickness of 20 nm to 300 nm is formed, a patterned resist film is formed, the metal film is etched with a first etchant to which the piezoelectric film has etching resistance, and the piezoelectric film is etched with a second etchant to which the metal film has etching resistance. | 2016-01-28 |
20160027997 | MAGNETIC DEVICES HAVING PERPENDICULAR MAGNETIC TUNNEL JUNCTION - Provided are magnetic memory devices with a perpendicular magnetic tunnel junction. The device includes a magnetic tunnel junction including a free layer structure, a pinned layer structure, and a tunnel barrier therebetween. The pinned layer structure may include a first magnetic layer having an intrinsic perpendicular magnetization property, a second magnetic layer having an intrinsic in-plane magnetization property, and an exchange coupling layer interposed between the first and second magnetic layers. The exchange coupling layer may have a thickness maximizing an antiferromagnetic exchange coupling between the first and second magnetic layers, and the second magnetic layer may exhibit a perpendicular magnetization direction, due at least in part to the antiferromagnetic exchange coupling with the first magnetic layer. | 2016-01-28 |
20160027998 | VIA FORMED UNDERLYING A MANGETORESISTIVE DEVICE AND METHOD OF MANUFACTURE - A via underlying a magnetoresistive device is formed to include a lower portion that includes a first material and an upper portion that includes a second material, where the second material is part of the material making up the bottom electrode of the magnetoresistive device. The via is formed by partially filling a via hole with the first material and then filling the remaining portion of the via hole when a layer of the second material is deposited to form the basis for the bottom electrode. The layer of second material is polished to provide a planar surface on which to form the magnetoresistive stack and top electrode. After forming the magnetoresistive stack and top electrode, the layer of second material is etched to form the bottom electrode. Such a via allows the magnetoresistive stack to be formed directly over the via, thereby reducing the area required for each device and increasing density in applications such as MRAMs. | 2016-01-28 |
20160027999 | METHOD FOR MANUFACTURING MTJ MEMORY DEVICE - A method for manufacturing MTJ pillars for a MTJ memory device. The method includes depositing multiple MTJ layers on a substrate, depositing a hard mask on the substrate and coating a photoresist on the hard mask. Further, alternating steps of reactive ion etching and ion beam etching are performed to isolate MTJ pillars and expose side surfaces of the MTJ layers. An insulating layer is the applied to protect the side surfaces of the MTJ layers. A second insulating layer is deposited before the device is planarized using chemical mechanical polishing. | 2016-01-28 |
20160028000 | MRAM Device and Fabrication Method Thereof - A method of forming and a magnetoresistive random access memory (MRAM) device. In an embodiment, the MRAM device includes a magnetic tunnel junction (MTJ) disposed over a bottom electrode, the magnetic tunnel junction having a first sidewall, a top electrode disposed over the magnetic tunnel junction, and a dielectric spacer supported by the magnetic tunnel junction and extending along sidewalls of the top electrode, the dielectric spacer having a second sidewall substantially co-planar with the first sidewall of the magnetic tunnel junction. | 2016-01-28 |
20160028001 | PACKAGING FOR AN ELECTRONIC DEVICE - In one aspect, a method includes processing a metal substrate, performing a first etch on a first surface of the metal substrate to form, for an integrated circuit package, secondary leads and a curved component having two primary leads and performing a second etch, on a second surface of the substrate opposite the first surface, at locations on the secondary leads and locations on the curved component to provide a locking mechanism. Each primary lead located at a respective end of the curved component. | 2016-01-28 |
20160028002 | FORMING SELF-ALIGNED CONDUCTIVE LINES FOR RESISTIVE RANDOM ACCESS MEMORIES - Resistive random access memory elements, such as phase change memory elements, may be defined using a plurality of parallel conductive lines over a stack of layers, at least one of which includes a resistive switching material. The stack may be etched using the conductive lines as a mask. As a result, memory elements may be self-aligned to the conductive lines. | 2016-01-28 |
20160028003 | SHAPING RERAM CONDUCTIVE FILAMENTS BY CONTROLLING GRAIN-BOUNDARY DENSITY - Filament size and shape in a ReRAM stack can be controlled by doping layers of a variable-resistance stack to change the crystallization temperature. This changes the density of the grain boundaries that form during annealing and provide minimal-resistance paths for the migration of charged defects. Hf, Zr, or Ti decreases the crystallization temperature and narrows the filament, while Si or N increases the crystallization temperature and widens the filament. Tapered filaments are of interest: The narrow tip requires little energy to break and re-form, enabling the cell to operate at low power, yet the wider body and base are insensitive to entropic behavior of small numbers of defects, enabling the cell to retain data for long periods. | 2016-01-28 |
20160028004 | NANOPOROUS METAL-OXIDE MEMORY - A nanoporous (NP) memory may include a non-porous layer and a nanoporous layer sandwiched between the bottom and top electrodes. The memory may be free of diodes, selectors, and/or transistors that may be necessary in other memories to mitigate crosstalk. The nanoporous material of the nanoporous layer may be a metal oxide, metal chalcogenide, or a combination thereof. Further, the memory may lack any additional components. Further, the memory may be free from requiring an electroformation process to allow switching between ON/OFF states. | 2016-01-28 |
20160028005 | MEMRISTOR STRUCTURE WITH A DOPANT SOURCE - A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed. | 2016-01-28 |
20160028006 | 3D VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A variable resistance memory device includes a plurality of cell gate electrodes extending in a first direction, wherein the plurality of cell gate electrodes are stacked in a second direction that is substantially perpendicular to the first direction, A gate insulating layer surrounds each cell gate electrode of the plurality of cell gate electrodes and a cell drain region is formed on two sides of the each cell gate electrode of the plurality of cell gate electrodes A channel layer extends in the second direction along the stack of the plurality of cell gate electrodes, and a variable resistance layer contacting the channel layer. | 2016-01-28 |
20160028007 | PHASE CHANGE MATERIAL SWITCH AND METHOD OF MAKING THE SAME - A phase change material (PCM) switch is disclosed that includes a resistive heater element, and a PCM element proximate the resistive heater element. A thermally conductive electrical insulating barrier layer positioned between the PCM heating element and the resistive heating element, and conductive lines extend from ends of the PCM element and control lines extend from ends of the resistive heater element. | 2016-01-28 |
20160028008 | ReRAM cells with diffusion-resistant metal silicon oxide layers - A metal silicon oxide barrier layer between a nitride electrode containing the same metal and an oxide variable-resistance layer in a ReRAM cell prevents the metal from diffusing into the variable-resistance layer and prevents oxygen from diffusing into and oxidizing the electrode. Compound oxides of the same metal and silicon with varying stoichiometries and metal/silicon ratios may optionally replace part or all of the variable-resistance layer, a defect-reservoir layer, or both. The metal nitride electrode may include a metal silicon nitride current-limiting portion. Optionally, all the layers sharing the common metal may be formed in-situ as part of a single unit process, such as atomic layer deposition. | 2016-01-28 |
20160028009 | RESISTIVE MEMORY DEVICE - A non-volatile memory device and a manufacturing method thereof are provided. The memory device includes a substrate, a lower cell dielectric layer with gate conductors and a body unit conductor disposed on the lower cell dielectric layer and gates. Memory element conductors are disposed on the body unit and lower cell dielectric layer. An upper cell dielectric layer may be on the substrate and over the lower cell dielectric layer, body unit conductor and memory element conductors. The upper cell dielectric layer isolates the memory element conductors. | 2016-01-28 |
20160028010 | 3D VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A variable resistance memory device includes a plurality of cell gate electrodes extending in a first direction, wherein the plurality of cell gate electrodes are stacked in a second direction that is substantially perpendicular to the first direction. A gate insulating layer surrounds each cell gate electrode of the plurality of cell gate electrodes and a cell drain region is formed on two sides of the each cell gate electrode of the plurality of cell gate electrodes A channel layer extends in the second direction along the stack of the plurality of cell gate electrodes, and a variable resistance layer contacting the channel layer. | 2016-01-28 |
20160028011 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME, AND MICROPROCESSOR, PROCESSOR, SYSTEM, DATA STORAGE SYSTEM AND MEMORY SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE - A semiconductor device includes first lines extending in a first direction; second lines extending in a second direction crossing with the first direction; and first resistance variable elements defined between the first lines and the second lines and each including a first substance layer and a second substance layer, wherein the first substance layer extends in the first direction and the second substance layer extends in the second direction. | 2016-01-28 |
20160028012 | MANUFACTURING METHOD OF FLEXIBLE DISPLAY DEVICE AND SUBSTRATE STRUCTURE - The present invention relates to display technology and provides a manufacturing method of flexible display devices and a substrate structure, used for uniformly stripping a flexible substrate of the flexible display device from a bearing substrate. The method includes: forming an adhesive layer on the bearing substrate; forming the flexible substrate on the adhesive layer, and fixing the flexible substrate to the bearing substrate through the adhesive layer; forming display elements on a surface of the flexible substrate opposite to the other surface which adhered to the adhesive layer; arranging a heater on a surface of the bearing substrate opposite to the other surface on which formed the adhesive layer; strip the flexible substrate from the bearing substrate by heating the adhesive layer via the heater, thus obtain the flexible display device, wherein the viscidity of the adhesive in the adhesive layer is degraded after being heated. | 2016-01-28 |
20160028013 | CARRIER TRANSPORT MATERIAL - The present invention provides a carrier transport material formed by completing a reaction process of at least one aromatic compound and at least one polycyclic aromatic hydrocarbons (PAHs), wherein a cross linking reaction can be activated in the molecular compound through heating or ultraviolet irradiation because the molecular compound has at least one cross-linkable functional group. Therefore, when the carrier transport material is applied in an OLED, the carrier transport material would not be dissolved by the solvent included in the next coated material because the carrier transport material has been cured after the cross linking reaction is carried out. Moreover, because the carrier transport material would simultaneously perform an electron confining functionality when being used as a hole transport layer, the device efficiency of the OLED having the carrier transport material is obviously enhanced during the high-brightness operation especially. | 2016-01-28 |
20160028014 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device includes: a first electrode; a second electrode; an emission layer between the first electrode and the second electrode; and a hole transport region between the first electrode and the emission layer, wherein the hole transport region includes an auxiliary layer, and the auxiliary layer includes an amine-based compound represented by Formula 1: | 2016-01-28 |
20160028015 | AMINE-BASED COMPOUND AND ORGANIC LIGHT-EMITTING DIODE INCLUDING THE SAME - An amine-based compound and an organic light-emitting diode including the amine-based compound. | 2016-01-28 |
20160028016 | BORON-NITROGEN POLYAROMATIC COMPOUNDS AND THEIR USE IN OLEDS - Boron-nitrogen polyaromatic compounds having a fused aromatic ring system are provided, where the compounds include a [1,2]azaborino[1,2-a][1,2]azaborine | 2016-01-28 |
20160028017 | ORGANIC LIGHT EMITTING DEVICE - An organic light-emitting device including a first electrode; a second electrode opposite to the first electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer, wherein the organic layer includes a first compound represented by the following Formula 1 and a second compound represented by the following Formula 2: | 2016-01-28 |
20160028018 | ORGANIC COMPOUND AND ORGANIC LIGHT EMITTING DIODE DEVICE INCLUDING THE SAME - A compound, an organic light emitting diode device, and a display device, the compound being represented by the following Chemical Formula 1: | 2016-01-28 |
20160028019 | ORGANIC LIGHT EMITTING DEVICE AND DISPLAY APPARATUS INCLUDING THE SAME - An organic light emitting device includes an anode, a hole auxiliary layer on the anode, the hole auxiliary layer including an arylamine derivative, an emission layer on the hole auxiliary layer, an electron auxiliary layer on the emission layer, the electron auxiliary layer including a 9,10-diarylanthracene derivative and a bifluorene derivative, and a cathode on the electron auxiliary layer. | 2016-01-28 |
20160028020 | ORGANIC ELECTRONIC ELEMENT AND AN ELECTRONIC DEVICE COMPRISING IT - Disclosed is an organic electric element comprising a first electrode, a second electrode, and an organic material layer between the first electrode and the second electrode, wherein the organic material layer comprises the compound of Formula 1 and Formula 2 to improve driving voltage, luminous efficiency, color purity, and life span. | 2016-01-28 |
20160028021 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - A composition comprising a first compound and a second compound is described. The composition can be a mixture of a first compound having a structure according to Formula I, | 2016-01-28 |
20160028022 | Light-Emitting Element, Light-Emitting Device, Electronic Device, Lighting Device, and Organic Compound - To provide a light-emitting element with an improved reliability, a light-emitting element with a high current efficiency (or a high quantum efficiency), and a novel dibenzo[f,h]quinoxaline derivative that is favorably used in a light-emitting element which is one embodiment of the present invention. A light-emitting element includes an EL layer between an anode and a cathode. The EL layer includes a light-emitting layer; the light-emitting layer contains a first organic compound having an electron-transport property and a hole-transport property, a second organic compound having a hole-transport property, and a light-emitting substance; the combination of the first organic compound and the second organic compound forms an exciplex; the HOMO level of the first organic compound is lower than the HOMO level of the second organic compound; and a difference between the HOMO level of the first organic compound and the HOMO level of the second organic compound is less than or equal to 0.4 eV. | 2016-01-28 |