03rd week of 2011 patent applcation highlights part 13 |
Patent application number | Title | Published |
20110012015 | Apparatus and Methods for Measuring Formation Characteristics - An apparatus can measure characteristics of a formation surrounding a borehole. The apparatus comprises a tool body including a neutron measurement section including a neutron source and a neutron detector arrangement spaced in an axial direction from the neutron source; and | 2011-01-20 |
20110012016 | SPECTROPHOTOMETRIC IDENTIFICATION OF MICROBE SUBSPECIES - A dual-stage method is provided for identifying a microbe by, for example, its species or its subspecies. The method includes measuring a mass spectrum of the microbe using a mass spectrometer, calculating indicators for similarities between reference mass spectra in a library and the measured mass spectrum, selecting a group of reference mass spectra similar to the measured mass spectrum, determining a distinguishing weight for each mass signal of the reference mass spectra in the group, where the distinguishing weights emphasize differences between the reference mass spectra in the group, and calculating indicators for similarities between the reference mass spectra in the group and the measured mass spectrum as a function of the distinguishing weights. | 2011-01-20 |
20110012017 | Mass Spectrometer - One virtual rod electrode ( | 2011-01-20 |
20110012018 | Magnetic Lens, Method for Focusing Charged Particles and Charged Particle Energy Analyzer - The invention provides a magnetic lens for generating a magnetic imaging field to focus charged particles emitted from a sample, the lens comprising a central pole piece and an outer pole piece disposed about the central pole piece, wherein the lens comprises a magnetic moveable element for movement relative to at least one of the pole pieces, whereby a focal length of the lens is variable by said movement of the magnetic moveable element, thereby enabling a zoom facility for changing the magnification of an image. The movement of the moveable element preferably changes the magnetic circuit between the pole pieces. Also provided is a method of focusing charged particles emitted from a sample and a charged particle energy analyzer, such as an imaging photoelectron spectroscopy system. | 2011-01-20 |
20110012019 | MIRROR SWITCH APPARATUS - A mirror switch apparatus for controlling an electronic device includes a directional light source generator, a mirror component, and a light receiver. The directional light source generator is used to provide a directional light to be transmitted to the mirror component. The light receiver is used to control the electronic device. When the light receiver receives the directional light reflected from the mirror component the mirror switch apparatus is activated to control the electronic device, such as by turning the device on/off. | 2011-01-20 |
20110012020 | X-RAY DETECTOR AND METHOD FOR FABRICATING THE SAME - An X-ray detector for detecting X-ray comprises a photodetector and a scintillator layer formed of a fluorescent material coated on a light receiving surface of the photodetector, the fluorescent material converting X-ray into light. | 2011-01-20 |
20110012021 | NUCLEAR THREAT DETECTION - A detector for detecting radiation, the detector comprising:
| 2011-01-20 |
20110012022 | Direct Conversion X-Ray Imaging Device With Strip Electrodes - A flat panel X-ray imager using an amorphous selenium detector which uses a dielectric layer within the X-ray conversion layer to form an interface between the X-ray conversion layer and the high voltage bias electrode. To accomplish the removal of trapped counter charges at the dielectric/selenium layer, a plurality of discrete or strip electrodes are provided in contact with the dielectric layer and which are electrically coupled into distinct groups. During X-ray exposure, a high bias voltage is applied to all groups of strip electrodes. Following X-ray exposure and image readout, the groups of strip electrodes are energized using a plurality of differently-phased energization signals to drive trapped counter charges toward “gutter” strip electrodes at the sides of the detector. A second embodiment of the flat panel X-ray imager includes sandwiching the discrete electrodes in a dielectric layer applied against the selenium layer and including a continuous electrode on the opposite side of the dielectric layer. Application of a high voltage bias to the continuous electrode results in an electric field in the selenium layer that is smoothed during X-ray acquisition. Discrete electrode energization to drive trapped counter charges to the gutter electrodes occurs while the high voltage bias is present. | 2011-01-20 |
20110012023 | DEVICE FOR DETECTING RADIATION WITH IMPROVED ARRANGEMENT - The invention relates to a device for detecting electromagnetic radiation, in particular ionizing radiation, consisting of an assembly of juxtaposed parallelepipedic semiconductor detection blocks ( | 2011-01-20 |
20110012024 | Method for Preparing Ion Source From Nanoparticles - A method for preparing an ion source from nanoparticles is provided. The method includes the steps of: providing nanoparticles, vaporizing the nanoparticles from a solid state to a gaseous state, and ionizing the gas to form the ion source. The ion source is prepared by placing solid nanoparticles in a stainless tube, heating and vaporizing the solid nanoparticles into a gaseous state, and ionizing the gas. The gas can be formed at a lower heating temperature than when solid lumps are used because solid nanoparticles have a lower melting point than solid lumps. Thus, the heating temperature is lowered, and the preparing time of the ion source is shortened. Besides, under the same temperature, an ion source prepared from nanoparticles provides higher vapor pressure and allows a higher implantation dose than when the ion source is prepared from solid lumps, thus expanding the applicability of ion implantation technology. | 2011-01-20 |
20110012025 | FLUORESCENCE OBSERVATION APPARATUS - A fluorescence observation apparatus according to the present invention includes a light source section that can emit a plurality of excitation light beams of different wavelength bands and select excitation light beams to be emitted to an object where there are a first fluorescent substance and a second fluorescent substance to be examined from among the plurality of excitation light beams, a variable filter section that selectively allows at least part of the wavelength band of returning light from the object to pass, a photo-detecting section that detects the light that has passed through the variable filter section, a calculation processing section that carries out calculations to determine a wavelength band of the excitation light emitted from the light source section and a transmission wavelength band in the variable filter section based on intensity characteristics of the plurality of excitation light beams, fluorescence characteristics of the first fluorescent substance and fluorescence characteristics of the second fluorescent substance and a control section that performs control of causing the light source section to interlock with the variable filter section based on the calculation result of the calculation processing section. | 2011-01-20 |
20110012026 | PLANAR OPTICAL WAVEGUIDE WITH CORE OF LOW-INDEX-OF-REFRACTION INTERROGATION MEDIUM - An apparatus for illuminating a sample includes a planar waveguide. The planar waveguide includes a first substrate, including a first outer surface and a first inner surface, and a second substrate, including a second outer surface and a second inner surface. The first and second inner surfaces of the first and second substrates, respectively, are spaced apart from each other and partly define a volume for confining the sample therein. The apparatus also includes a light source for providing light directed toward the planar waveguide, such that the light is optically coupled to and contained within the planar waveguide between the outer surfaces of the first and second substrates, while illuminating at least a portion of the sample confined within the volume. | 2011-01-20 |
20110012027 | OPTICAL LUMINESCENCE OF FUNCTIONALIZED FULLERENES IN AN OXYGEN FREE ENVIRONMENT - Functionalized fullerenes, when excited at any of a broad range of wavelengths in an oxygen free environment, undergo luminescence. The oxygen sensitive luminescence of functionalized fullerenes is used for numerous applications including oxygen detection; irradiation induced healing of polymeric materials; and phosphors for optical location and display applications. The degradation of the functionalized fullerenes allows for the detection of oxygen by diminished luminescence when the fullerenes are exposed to an irradiation source, such as a laser beam, in the presence of oxygen. The luminescence from a portion of a surface of a material with functionalized fullerenes allows for the location of the surface containing a functionalized fullerene target in the absence of oxygen or to heat the object in the area irradiated that is exposed to oxygen. The localized heating can be used to repair defects to a material containing the functionalized fullerenes. Materials containing functionalized fullerenes can be used as phosphors in display applications. | 2011-01-20 |
20110012028 | PARTICLE BEAM TREATMENT APPARATUS AND PARTICLE BEAM TREATMENT METHOD - When a predetermined region of a target volume is divided into multiple layers in a depth direction of particle beams and particle beams are irradiated, dose calibration is carried out separately for the divided layers. | 2011-01-20 |
20110012029 | PATTERN OBSERVATION METHOD - The pattern observation method for observing a pattern which is formed on an insulating film, includes: irradiating an entirety of the pattern with a charged particle beam, to obtain a temporary image of the pattern which has region information of a convex pattern and a concave pattern; irradiating the convex and concave patterns with the charged particle beam having a first and second voltages based on the region information, to thereby form an electric field between a top surface of the convex pattern and a bottom surface of the concave pattern so that charged particles emitted from the bottom surface of the concave pattern may be drawn out to an outside of the pattern; and irradiating the entirety of the pattern with the charged particle beam to obtain an image of the pattern having the information of the bottom surface of the concave pattern. | 2011-01-20 |
20110012030 | EBEAM STERILIZATION APPARATUS - Improved electron beam sterilization apparatus and shielding techniques for use in are provided. A controller modulates an ebeam when sterilizing an interior to an object to ensure that adequate dose is received. Sterilization carousels are configured with input/discharge feeds to reduce the possibility of humans being exposed to dangerous levels of radiation. The system reduces the amount of shielding required to thereby lower cost of installation. | 2011-01-20 |
20110012031 | CHARGED PARTICLE BEAM DRAWING METHOD AND APPARATUS - A charged particle beam drawing apparatus for drawing patterns corresponding to figures in a drawing data, has a portion for dividing a drawing area on the workpiece into block frames, a portion for combining at least a first block frame and a second block frame into a virtual block frame, and a portion for transferring a data of the virtual block frame from an input data dividing module to a common memory of a first converter and a second converter. The first converter converts a data of a first figure included in the first block frame into a first drawing apparatus internal format data. The second converter converts a data of a second figure included in the second block frame into a second drawing apparatus internal format data. The first figure and the second figure are included in a cell extending over the first block frame and the second block frame. | 2011-01-20 |
20110012032 | ELECTRON BEAM STERILIZATION APPARATUS - Improved electron beam sterilization apparatus and shielding techniques for use in are provided. A controller modulates an electron beam when sterilizing an interior to an object to ensure that adequate dose is received. Sterilization carousels are configured with input/discharge feeds to reduce the possibility of humans being exposed to dangerous levels of radiation. The system reduces the amount of shielding required to thereby lower cost of installation. | 2011-01-20 |
20110012033 | Adjustable Louvered Plasma Electron Flood Enclosure - An apparatus is provided for reducing particle contamination in an ion implantation system. The apparatus has an enclosure having an entrance, an exit, and at least one louvered side having a plurality of louvers defined therein. A beamline of the ion implantation system passes through the entrance and exit, wherein the plurality of louvers of the at least one louvered side are configured to mechanically filter an edge of an ion beam traveling along the beamline. The enclosure can have two louvered sides and a louvered top, wherein respective widths of the entrance and exit of the enclosure, when measured perpendicular to the beamline, are generally defined by a position of the two louvered sides with respect to one another. One or more of the louvered sides can be adjustably mounted, wherein the width of one or more of the entrance and exit of the enclosure is controllable. | 2011-01-20 |
20110012034 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, METHOD FOR CONTROLLING ION BEAM, AND ION IMPLANTATION APPARATUS - The ion implantation apparatus includes a source head, an extraction electrode having a slit trough which a part of an ion beam outputted from the source head passes, a magnet for curving a trajectory of the ion beam passed through the slit, a target to be irradiated with the ion beam outputted from the magnet, an electric current measuring device facing an ion exit port of the source head through the slit of the extraction electrode, and a control portion for controlling a position of the extraction electrode based on a measured result of the current measuring device in a state that production of a magnetic field from the magnet is stopped. | 2011-01-20 |
20110012035 | Method for Precision Symbolization Using Digital Micromirror Device Technology - A programmed, circuit-controlled digital micro-mirror device (DMD, | 2011-01-20 |
20110012036 | COMPACT HIGH POWER TERAHERTZ RADIATION CELL - A device for generating terahertz radiation using a phase matched optical rectification technique. The device converts laser radiation to terahertz radiation via a particular type of photonic downconversion. The device includes a crystalline material suitable for photonic downconversion of laser radiation, a first coupling component for coupling the laser radiation to the crystalline material and a second coupling component for coupling the generated terahertz radiation from the crystalline material to the environment. By sustaining the phase matching condition over a significant distance, the device is capable of providing terahertz radiation with high peak and average power. Also disclosed is a method for generating terahertz radiation including the steps of optically coupling laser radiation to a crystalline material suitable for downconversion of the laser radiation to terahertz radiation, downconverting the laser radiation to terahertz radiation and optically coupling the generated terahertz radiation from the crystalline material to the environment. | 2011-01-20 |
20110012037 | Noise reducing valve for toilet systems - Providing a noise reducing water valve, intended to be installed inside the bottom piece of an existing flush valve installed in a toilet as a retrofit or built-in inside a new flush valve, in order to reduce and control the unnecessary and excessive water flow present in a noisy toilet. | 2011-01-20 |
20110012038 | ELECTRONIC EXPANSION VALVE - Embodiments of the invention provide an electronic expansion valve, including a magnetic rotor and a screw rod, and further including an output shaft. The magnetic rotor is surroundingly provided on the output shaft, and the output shaft is slidably connected to the screw rod in an axial direction and drivably connected to the screw rod in a circumferential direction. Since the output shaft is slidably connected to the screw rod in an axial direction and drivably connected to the screw rod in a circumferential direction, the magnetic rotor does not subject to an axial force transmitted by the screw rod and rotates flexibly. | 2011-01-20 |
20110012039 | ELECTRIC CONTROL VALVE AND VALVE BODY DEVICE THEREOF - The present invention discloses a valve body device for an electric control valve comprising a valve seat ( | 2011-01-20 |
20110012040 | FLAME SAFETY SYSTEM FOR IN SITU PROCESS ANALYZER - A method of operating a process a combustion analyzer having a measurement cell is provided. The method includes exposing the measurement cell to exhaust of a combustion process where fuel and oxygen are combined in a burner to produce a flame. The measurement cell is heated to a temperature above a flashpoint of the fuel. When a condition is detected, such as a fault or abnormal situation, gas is directed to the measurement cell to form a gaseous barrier between the measurement cell and unburned fuel while the detected condition exists. Once the condition abates, the gas flow is disengaged and process combustion gas measurements are provided | 2011-01-20 |
20110012041 | ELECTROMAGNETIC ACTUATOR FOR A PROPORTIONAL SOLENOID VALVE - An electromagnetic actuator for a proportional solenoid valve, which actuator has a fixed ferromagnetic core having a longitudinal axis, a plunger movable with respect to the fixed core along the axis between two stroke end positions, a spring for moving the plunger to the first stroke end position, an energizing winding to generate an electromagnetic induction field which produces a force against the bias of the spring and such that it moves the plunger to a equilibrium position between the stroke end positions, and wherein a surface portion of the plunger is increasingly facing a surface portion of the fixed core as the plunger approaches the second stroke end position, so that the electromagnetic induction field has an increasing number of force lines which close in the air gap between the fixed core and the plunger by crossing the first surface portion of the fixed core orthogonally to said axis. | 2011-01-20 |
20110012042 | Water flushing device for floor toilet - A water flushing device includes a membrane engaged onto a housing, a casing extended in the housing for forming an outer peripheral space between the housing and the casing, a valve device for selectively blocking and opening an opening of the membrane, a barrel mounted to the membrane and engaged in the casing, the membrane includes a stepped orifice having a narrowed and a relatively wider orifice portions for forming an inner peripheral shoulder, a gasket includes an outer peripheral flange engaged into the relatively wider orifice portion of the membrane and includes one or more slots formed in the outer peripheral flange for allowing the water to quickly flow into a sealed upper compartment of the housing. | 2011-01-20 |
20110012043 | SELF ACTUATING ROTARY DUST VALVE - The present invention relates to a self actuating rotary dust valve particularly for discharging dust from an engine air cleaner. The rotary dust valve includes a valve body having an inlet port, an outlet port and a rotor chamber interposed therebetween. A rotary dust ejection member is enclosed in the rotor chamber and supported for rotation about a fixed axis. A plurality of fin members are provided angularly spaced about and secured to the hub member. Adjacent pairs of the fin members define at least one dust pocket therebetween to receive dust from the air cleaner to be ejected. The rotor chamber and the fin members are cooperatively shaped and configured to maintain a continuous air lock closure. The dust valve is operable by any of: gravity and vibration to rotate and thereby to discharge the dust buildup through the outlet port or alternately by other drive means. | 2011-01-20 |
20110012044 | VALVE - A valve includes a housing, a rotational body, two seat rings, a shaft integrally linked to the rotational body, and a sealing element. The rotational body is arranged rotatably in the housing and has a through-opening. The seat rings are spaced apart in the housing, each positioned against an outer surface of the rotational body to seal against leakage. The shaft extends outwardly through a housing opening. Part of the shaft has a spherical outer surface. The sealing element is positioned against the spherical outer surface, and includes a sealing lip and a support ring. The support ring has a spherical inner surface with a curvature corresponding to the spherical outer surface. The shaft is supported on the support ring at the shaft part's spherical outer surface. A flow path is defined by a housing through-opening and a rotational body through-opening, and is closed or at least partially open as determined by a rotational angle position of the rotational body about a rotational axis. The rotational body and shaft move together pivoting about a pivot axis that is orthogonal to the rotational axis. The pivot axis is determined by the shaft part's spherical outer surface. | 2011-01-20 |
20110012045 | VALVE CAP FOR A NON-RETURN VALVE - A non-return valve for a hydraulic tensioning system which is used in traction mechanism drives of internal combustion engines and which manipulates a hydraulic fluid flow between a pressure chamber and a reservoir. The non-return valve has a valve body which is inserted in a housing and which is embodied as a ball and which, when the non-return valve is closed, is supported in a spring-loaded fashion against a valve seat of a through-flow cross-section. When the non-return valve is open, the valve body is assigned to a valve seat of the housing and the flow cross-section ( | 2011-01-20 |
20110012046 | SEAL ASSEMBLIES FOR USE WITH FLUID VALVES - Seal assemblies for use with fluid valves are described. An example valve trim assembly for use with fluid valves includes a cage and a seal assembly to be positioned in at least one of the cage, a cage retainer or a plug. The seal assembly includes a first seal and a first scraper. The first seal is to provide a load to the first scraper to prevent the ingress of contaminate to a dynamic sealing surface to be engaged by the first seal. Additionally, the seal assembly includes a second seal and a second scraper. The second seal is to provide a load to the second scraper. Further, the seal assembly includes a spacer between the first and second seals. | 2011-01-20 |
20110012047 | FIBER-REINFORCED HEAT-RESISTANT SOUND-ABSORBING MATERIAL AND PROCESS FOR PRODUCING THE SAME - A production process which comprises a preform formation step of forming a fiber preform made of silicon carbide short fibers having heat resistance of 1000° C. or greater; a sol-gel preparation step of preparing a sol-gel solution containing a heat resistant compound having heat resistance of 1000° C. or greater; an impregnation-drying-calcination step of impregnating the fiber preform with the sol-gel solution, followed by drying and calcining; and a crystallization step of crystallizing the fiber preform after impregnation, drying and calcination. | 2011-01-20 |
20110012048 | EUTECTIC MELTS - The present invention refers to using the principal of a room temperature molten ionic liquid, to an electrolyte, to devices comprising the ionic liquid co-melting, and to the preparation of a room temperature ionic liquid via various physical and chemical methods. The room temperature molten ionic liquid comprises at least two component salts, at least one of which is not molten at room temperature, but, if combined with another salt, is in the molten state at room temperature. | 2011-01-20 |
20110012049 | METHOD FOR PRODUCING CRYSTALLOGRAPHICALLY ORIENTED CERAMIC - A method for producing a crystallographically oriented ceramic according to the present invention includes a preparation step of preparing a template layer having uniform crystal orientation in a predetermined direction, a formation step of forming a shaped body including a matrix layer arranged on the template layer, the matrix layer being composed of a mixed material that contains a lead-containing material and an additional material containing lithium and boron, and a firing step of firing the shaped body formed in the formation step at a predetermined firing temperature. Furthermore, after the firing step, a post-annealing step of heating the shaped body to remove lithium and boron may be included. | 2011-01-20 |
20110012050 | PIEZOELECTRIC MATERIAL - Provided is a piezoelectric material including a lead-free perovskite-type composite oxide which is excellent in piezoelectric characteristics and temperature characteristics and is represented by the general formula (1): | 2011-01-20 |
20110012051 | PIEZOELECTRIC/ELECTROSTRICTIVE CERAMIC COMPOSITION - To provide an alkaline-niobate-based piezoelectric/electrostrictive ceramic composition that has excellent electric field induced strain during application of high electric field. A piezoelectric/electrostrictive film is a sintered body of a piezoelectric/electrostrictive ceramic composition. The piezoelectric/electrostrictive ceramic composition is a piezoelectric/electrostrictive composition, in which a compound of at least one kind of element selected from the group consisting of Ba, Sr, Ca, La, Ce, Nd, Sm, Dy, Ho and Yb and a Mn compound are contained in a perovskite-type oxide containing Li, Na and K as A-site elements and Nb and Sb as B-site elements, where a ratio of a total number of atoms of the A-site elements to a total number of atoms of the B-site elements is more than one and the number of atoms of Sb to the total number of atoms of the B-site elements is 1 mol % or more and 10 mol % or less. | 2011-01-20 |
20110012052 | HALOGENATED ALKENE HEAT TRANSFER COMPOSITION WITH IMPROVED OIL RETURN - The invention relates to heat transfer agents and heat transfer compositions containing hydrocarbon lubricating oils and halogentaed alkene heat transfer fluid that promote oil flow and provide for improved oil return. The heat transfer compositions are useful in various heat transfer systems such as refrigeration, cooling, air conditioning, chiller operations. | 2011-01-20 |
20110012053 | HEAT TRANSFER OIL WITH A HIGH AUTO IGNITION TEMPERATURE - A heat transfer oil, comprising:
| 2011-01-20 |
20110012054 | Material With Enhanced Thermal Properties - A low density component, such as hollow microspheres, dispersed in a binder to produces a material having a surface that is comfortable to the touch even after extended exposure to an energy source, such as direct sun light. | 2011-01-20 |
20110012055 | Compositions, zinc electrodes, batteries and their methods of manufacture - A composition, method of its preparation, and zinc electrodes comprising the composition as the active mass, for use in rechargeable electrochemical cells with enhanced cycle life is described. The electrode active mass comprises a source of electrochemically active zinc and at least one fatty acid or a salt, ester or derivative thereof, or an alkyl sulfonic acid or a salt ester or derivative thereof. The zinc electrode is assumed to exhibit low shape change and decreased dendrite formation compared to known zinc electrodes, resulting in electrochemical cells which have improved capacity retention over a number of charge/discharge cycles. | 2011-01-20 |
20110012056 | Process Of Preparation Of Glyoxylic Acid Aqueous Solution - The invention relates to a method for preparing an aqueous solution of glyoxylic acid by oxidation of an aqueous solution of glyoxal with oxygen or a gas containing oxygen, in the presence of a catalytic quantity of nitric acid and/or at least one nitrogen oxide, a strong acid not oxidizing glyoxal, and by maintaining conditions satisfying the equation K | 2011-01-20 |
20110012057 | COATED SUPERABSORBENT POLYMER PARTICLES AND PROCESSES THEREFORE - Superabsorbent material, comprising first superabsorbent polymers, coated with second clay-crosslinked superabsorbent polymers, said second clay-crosslinked superabsorbent polymers being obtainable by the step of polymerization of a solution/dispersion of polymerizable compounds and clay particles, to obtain said second superabsorbent polymers, crosslinked by said clay particles, of a weight average largest particle dimension of less than 800 nm. | 2011-01-20 |
20110012058 | Composition Having Ring Structure and Terminal Amine Groups, and Use Thereof as Flue Gas Absorbent - Disclosed is a flue gas absorbent composition which contains a compound and water. The compound has a ring structure and includes terminal primary amine groups and substituted α-carbon atoms neighboring the amine groups. Further, a use of a solution of a compound having a ring structure and terminal amine groups as a flue gas absorbent is disclosed. The absorbent composition includes a ring-structure compound having superior absorption ability when compared to conventional absorbents, thereby exhibiting excellent properties, i.e., flue gas absorption rate improved by 50 to 100% and flue gas absorption capacity improved by 200 to 400%, as compared with currently used absorbents such as monoethanolamine (MEA) and 2-amino-2-methyl-propanol (AMP). | 2011-01-20 |
20110012059 | NOVEL PHOSPHORESCENT PHOSPHORS - Photoluminescent phosphors wherein some of the oxygen anions in the phosphor matrix have been replaced by halides or nitride. In addition, photoluminescent phosphors wherein some of the oxygen anions in the phosphor matrix have been replaced by halides or nitride and a charge compensator has been included. The phosphors are based on green emitting and blue-green emitting aluminates. | 2011-01-20 |
20110012060 | FLUORESCENT BODY FOR USE IN A NEAR-ULTRAVIOLET EXCITATION LIGHT-EMITTING ELEMENT - Provided is a fluorescent body for use in a near-ultraviolet excitation light-emitting element, comprising the compound given by formula (1), having part of element M | 2011-01-20 |
20110012061 | Semiconductor nanocrystal heterostructures - A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating. | 2011-01-20 |
20110012062 | HIGH-INTENSITY, PERSISTENT PHOTOLUMINESCENT FORMULATIONS AND OBJECTS, AND METHODS FOR CREATING THE SAME - Disclosed are photoluminescent formulations, comprising an effective amount of photoluminescent phosphorescent materials, which exhibit high luminous intensity and persistence. Also disclosed are photoluminescent objects formed by applying at least one photoluminescent layer, formed from photoluminescent formulations, to preformed articles. Further disclosed are methods for creating photoluminescent objects.” | 2011-01-20 |
20110012063 | METHOD AND SYSTEM FOR PRODUCING METHANE ENRICHED BIOGAS - A method and system for producing methane from raw biogas is provided, including absorption of biogas components with basic aqueous solution and treating the resultant solution in order to regenerate basic aqueous solution and harmless decomposed organic and non-organic components of biogas. | 2011-01-20 |
20110012064 | ACTIVE REFORMER - The invention provides an apparatus and method for producing synthetic gas. The apparatus has a pyrolysis chamber ( | 2011-01-20 |
20110012065 | POLYANILINE, METHOD FOR MANUFACTURING SAME, AND POLYANILINE-CONTAINING SOLUTION AND COATING MATERIAL - A method for manufacturing a polyaniline by preparing an aniline mixed solution in which an antirust additive and at least one of aniline and aniline derivatives are mixed and polymerizing at least one of the aniline and the aniline derivatives by adding a polymerization initiator to the aniline mixed solution, polyaniline obtained by the method, a polyaniline-containing solution, and a coating material containing the polyaniline. | 2011-01-20 |
20110012066 | GROUP IV NANOPARTICLE FLUID - A Group IV based nanoparticle fluid is disclosed. The nanoparticle fluid includes a set of nanoparticles-comprising a set of Group IV atoms, wherein the set of nanoparticles is present in an amount of between about 1 wt % and about 20 wt % of the nanoparticle fluid. The nanoparticle fluid also includes a set of HMW molecules, wherein the set of HMW molecules is present in an amount of between about 0 wt % and about 5 wt % of the nanoparticle fluid. The nanoparticle fluid further includes a set of capping agent molecules, wherein at least some capping agent molecules of the set of capping agent molecules are attached to the set of nanoparticles. | 2011-01-20 |
20110012067 | LITHIUM MANGANESE PHOSPHATE/CARBON NANOCOMPOSITES AS CATHODE ACTIVE MATERIALS FOR SECONDARY LITHIUM BATTERIES - The invention relates to a lithium manganese phosphate/carbon nanocomposite as cathode material for rechargeable electrochemical cells with the general formula Li | 2011-01-20 |
20110012068 | Process for producing fine silver particle colloidal dispersion, fine silver particle colloidal dispersion, and conductive silver film - A process for producing a fine silver particle colloidal dispersion which can simply form conductive silver layers and antimicrobial coatings by screen printing or the like. The process is characterized by having a reaction step of allowing an aqueous silver nitrate solution to react with a mixed solution of an aqueous iron(II) sulfate solution and an aqueous sodium citrate solution to form an agglomerate of fine silver particles, a filtration step of filtering the resultant agglomerate of fine silver particles to obtain a cake of the agglomerate of fine silver particles, a dispersion step of adding pure water to the cake to obtain a first fine silver particle colloidal dispersion of a water system in which dispersion the fine silver particles have been dispersed in the pure water, and a concentration and washing step of concentrating and washing the first fine silver particle colloidal dispersion of a water system. | 2011-01-20 |
20110012069 | DOPED TIN TELLURIDES FOR THERMOELECTRIC APPLICATIONS - The p- or n-conductive semiconductor material comprises a compound of the general formula (I) | 2011-01-20 |
20110012070 | GROUP-III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL - A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel. | 2011-01-20 |
20110012071 | ADDITIVE FOR DIELECTRIC FLUID - A dielectric fluid comprising hydrocarbon liquid admixed with an ester-based compound, wherein the ester-based compound is present in an effective amount to impart breakdown inhibiting properties to a paper insulation material when the dielectric fluid is in contact with the paper material. | 2011-01-20 |
20110012072 | Use of Hydrophobic Solvent-Based Pigment Preparations in Electronic Displays - The invention relates to the use of a pigment preparation as a dye for producing a colored optical image in an electronic display, said pigment preparation containing (A) at least one organic and/or inorganic pigment, (B) at least one solvent-soluble or solvent-dispersible polymeric dispersant, (C) at least one aldehyde resin or ketone resin, (D) optionally further additives common for producing solvent-containing pigment preparations, and (E) at least one hydrophobic solvent. | 2011-01-20 |
20110012073 | Optical film for suppressing near infrared ray transmittance and display filter using the same - An optical film includes a near-infrared absorbing layer, the near-infrared absorbing layer containing at least one colorant having a maximum absorption wavelength in the range of 900 nm to 1,100 nm, and a transparent copolymer resin containing fine rubber particles. | 2011-01-20 |
20110012074 | LASER PROTECTION POLYMERIC MATERIALS - This invention concerns a polymer coating material composition (PCM) comprising as components a polymer matrix, carbon nanotubes (CNT) as optical power limiters (OPL), and carbon rich molecules. One aspect of the invention is where the Polymer Matrix is a hyperbranched polymer, such as a hyperbranched polycarbosiloxane polymer. Another aspect of the invention is where the CNT is a short multiwall carbon nanotube (sMWNT). A further aspect of the invention is where the carbon-rich molecules are triethoxysilyl anthracene derivatives. The composition wherein the ratio in weight percent of Polymer Matrix to CNT to carbon-rich molecule is from 94:3:3 to 99.8:0.1:0.1. The composition can further contain one or more of multi-photon absorbers (MPA) chromophores or reverse saturable absorbers (RSA) chromophores. These compositions can be used as: a) a film, b) a coating, c) a liquid, d) a solution, or e) a sandwiched film between two transparent substrates. | 2011-01-20 |
20110012075 | INFRARED ABSORPTIVE COMPOUND, AND FINE PARTICLE CONTAINING THE COMPOUND - A fine particle which contains a compound represented by formula (1): | 2011-01-20 |
20110012076 | Universal cable puller - The universal cable puller is a flexible elongate member having a handgrip on one end and an adapter fitting on the other end. The adapter fitting is preferably threaded and accepts a correspondingly threaded adapter. A kit of adapters may be provided. Each adapter has a different head that accepts a corresponding cable connector. | 2011-01-20 |
20110012077 | DEVICE FOR ELIMINATING FENCE GATE SAGGING AND METHOD THEREIN - A device and method for eliminating fence gate sagging having an inferior bracket attached to a portion of the gate, a superior bracket attached to a portion of the gate, and a tension rod in mechanical communication therebetween, wherein said tension rod is adjustable to create tension and thus urge said portions of said gate toward each other. | 2011-01-20 |
20110012078 | Thermoplastic fencing construction - A fencing construction made of thermoplastic materials which can be easily assembled utilizing ultrasonic welding and which can include a unique configuration for the ultrasonic welding surfaces which prevents the flow of melted thermoplastic materials outwardly onto the decorative outer surfaces of the various fencing parts. Any excess thermoplastic material is designed to pass inwardly toward the longitudinally extending bore defined in the various fencing construction parts. This concept is particularly useful for attaching capping fence members which are injection molded onto structural fence members which are extruded. | 2011-01-20 |
20110012079 | THERMAL PROTECT PCRAM STRUCTURE AND METHODS FOR MAKING - A memory cell as described herein includes a conductive contact and a memory element comprising programmable resistance memory material overlying the conductive contact. An insulator element extends from the conductive contact into the memory element, the insulator element having proximal and distal ends and an inside surface defining an interior. The proximal end is adjacent the conductive contact. A bottom electrode contacts the conductive contact and extends upwardly within the interior from the proximal end. The memory element is within the interior extending downwardly from the distal end to contact a top surface of the bottom electrode at a first contact surface. A top electrode can be separated from the distal end of the insulator element by the memory element and contact the memory element at a second contact surface having a surface area greater than that of the first contact surface. | 2011-01-20 |
20110012080 | Arsenic-Containing Variable Resistance Materials - A variable resistance material for memory applications. The material includes a base Ge—Sb—Te composition and further includes As-doping. The materials were included in variable resistance memory devices. Incorporation of As in the variable resistance composition led to a significant increase in the operational life of the device and, unexpectedly, did not reduce the programming speed of the device. In one embodiment, the composition includes at atomic concentration of Ge in the range from 7%-13%, an atomic concentration of Sb in the range from 50%-70%, an atomic concentration of Te in the range from 20%-30%, and an atomic concentration of As in the range from 2%-15%. | 2011-01-20 |
20110012081 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a first conductive line, a second conductive line crossing over the first conductive line, a resistance variation part disposed at a position in which the second conductive line intersects with the first conductive line and electrically connected to the first conductive line and the second conductive line and a mechanical switch disposed between the resistance variation part and the second conductive line. The mechanical switch includes a nanotube. | 2011-01-20 |
20110012082 | ELECTRONIC COMPONENT COMPRISING A CONVERTIBLE STRUCTURE - An electronic component ( | 2011-01-20 |
20110012083 | PHASE CHANGE MEMORY CELL STRUCTURE - A memory cell described herein includes a memory element comprising programmable resistance memory material overlying a conductive contact. An insulator element includes a pipe shaped portion extending from the conductive contact into the memory element, the pipe shaped portion having proximal and distal ends and an inside surface defining an interior, the proximal end adjacent the conductive contact. A bottom electrode contacts the conductive contact and extends upwardly within the interior from the proximal end to the distal end, the bottom electrode having a top surface contacting the memory element adjacent the distal end at a first contact surface. A top electrode is separated from the distal end of the pipe shaped portion by the memory element and contacts the memory element at a second contact surface, the second contact surface having a surface area greater than that of the first contact surface. | 2011-01-20 |
20110012084 | RESISTOR RANDOM ACCESS MEMORY CELL WITH REDUCED ACTIVE AREA AND REDUCED CONTACT AREAS - A memory device has a sidewall insulating member with a sidewall insulating member length according to a first spacer layer thickness. A first electrode formed from a second spacer layer having a first electrode length according to a thickness of a second spacer layer and a second electrode formed from the second spacer layer having a second electrode length according to the thickness of the second spacer layer are formed on sidewalls of the sidewall insulating member. A bridge of memory material having a bridge width extends from a top surface of the first electrode to a top surface of the second electrode across a top surface of the sidewall insulating member, wherein the bridge comprises memory material. | 2011-01-20 |
20110012085 | METHODS OF MANUFACTURE OF VERTICAL NANOWIRE FET DEVICES - A vertical Field Effect Transistor (FET) comprising a vertical semiconductor nanowire is formed by the following steps. Create a columnar pore in a bottom dielectric layer formed on a bottom electrode. Fill the columnar pore by plating a vertical semiconductor nanowire having a bottom end contacting the bottom electrode. The semiconductor nanowire forms an FET device with a FET channel region between a source region and a drain region formed in distal ends of the vertical semiconductor nanowire. Form a gate dielectric layer around the channel region of the vertical semiconductor nanowire and then form a gate electrode around the gate dielectric layer. Form a top electrode contacting a top end of the vertical semiconductor nanowire. | 2011-01-20 |
20110012086 | NANOSTRUCTURED FUNCTIONAL COATINGS AND DEVICES - In one aspect of the present invention, an article including a nanostructured functional coating disposed on a substrate is described. The functional coating is characterized by both anti-reflection properties and down-converting properties. Related optoelectronic devices are also described. | 2011-01-20 |
20110012087 | SEMICONDUCTOR NANOCRYSTALS - A semiconductor nanocrystal include a first I-III-VI semiconductor material and have a luminescence quantum yield of at least 10%, at least 20%, or at least 30%. The nanocrystal can be substantially free of toxic elements. Populations of the nanocrystals can have an emission FWHM of no greater than 0.35 eV. | 2011-01-20 |
20110012088 | OPTOELECTRONIC SEMICONDUCTOR BODY WITH A TUNNEL JUNCTION AND METHOD FOR PRODUCING SUCH A SEMICONDUCTOR BODY - An optoelectronic semiconductor body includes an epitaxial semiconductor layer sequence including a tunnel junction including an intermediate layer between an n-type tunnel junction layer and a p-type tunnel junction layer, wherein the intermediate layer has an n-barrier layer facing the n-type tunnel junction layer, a p-barrier layer facing the p-type tunnel junction layer, and a middle layer with a material composition differing from material compositions of the n-barrier layer and the p-barrier layer; and an active layer that emits electromagnetic radiation. | 2011-01-20 |
20110012089 | LOW RESISTANCE ULTRAVIOLET LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - A low resistance light emitting device with an ultraviolet light-emitting structure having a first layer with a first conductivity, a second layer with a second conductivity; and a light emitting quantum well region between the first layer and second layer. A first electrical contact is in electrical connection with the first layer and a second electrical contact is in electrical connection with the second layer. A template serves as a platform for the light-emitting structure. The ultraviolet light-emitting structure has a first layer having a first portion and a second portion of AlXInYGa(1-X-Y)N with an amount of elemental indium, the first portion surface being treated with silicon and indium containing precursor sources, and a second layer. When an electrical potential is applied to the first layer and the second layer the device emits ultraviolet light. | 2011-01-20 |
20110012090 | SILICON-GERMANIUM NANOWIRE STRUCTURE AND A METHOD OF FORMING THE SAME - A silicon-germanium nanowire structure arranged on a support substrate is disclosed, The silicon-germanium nanowire structure includes at least one germanium-containing supporting portion arranged on the support substrate, at least one germanium-containing nanowire disposed above the support substrate and arranged adjacent the at least one germanium-containing supporting portion, wherein germanium concentration of the at least one germanium-containing nanowire is higher than the at least one germanium-containing supporting portion. A transistor comprising the silicon-germanium nanowire structure arranged on a support substrate is also provided. A method of forming a silicon-germanium nanowire structure arranged on a support substrate and a method of forming a transistor comprising forming the silicon-germanium nanowire structure arranged on a support substrate are also disclosed. | 2011-01-20 |
20110012091 | ENHANCEMENT OF ORGANIC PHOTOVOLTAIC CELL OPEN CIRCUIT VOLTAGE USING ELECTRON/HOLE BLOCKING EXCITON BLOCKING LAYERS - The present disclosure relates to photosensitive optoelectronic devices comprising at least one of an electron blocking or hole blocking layer. Further disclosed are methods of increasing power conversion efficiency in photosensitive optoelectronic devices using at least one of an electron blocking or hole blocking layer. The electron blocking and hole blocking layers presently disclosed may reduce electron leakage current by reducing the dark current components of photovoltaic cells. This work demonstrates the importance of reducing dark current to improve power conversion efficiency of photovoltaic cells. | 2011-01-20 |
20110012092 | NITROGEN-CONTAINING HETEROCYCLIC DERIVATIVE AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME - A novel nitrogen-containing heterocyclic derivative having a specific structure. An organic electroluminescence device comprises an organic thin-film layer which is disposed between a cathode and an anode and comprises one or more layers having a light emitting layer. At least one layer of the organic thin-film layer comprises the nitrogen-containing heterocyclic derivative. The organic electroluminescence device exhibits a high luminance and a high luminous efficiency even at a low driving voltage. | 2011-01-20 |
20110012093 | LUMINESCENT GOLD(III) COMPOUNDS CONTAINING BIDENTATE LIGAND FOR ORGANIC LIGHT-EMITTING DEVICES AND THEIR PREPARATION - Embodiments of the invention are directed to luminescent gold(III) compounds contains a bidentate ligand with at least one strong σ-donating group, a method of preparation of these compounds and the use of these compounds in organic light emitting devices. The gold(III) compounds have the chemical structure: | 2011-01-20 |
20110012094 | Electro-Optic Device and Method for Manufacturing the same - Provided are an electro-optic device and a method for manufacturing the same. The method includes forming a bottom electrode on a substrate, forming a first insulation film to cross over the bottom electrode forming an organic film on the substrate where the bottom electrode and the first insulation film are formed, forming a top electrode film on the organic film, and forming a top electrode to cross the bottom electrode by removing a portion of the top electrode film through a laser-scribing process. Herein, in the forming of the top electrode through the laser-scribing process, an edge region of a bottom surface of the top electrode may be positioned corresponding to an upper side of the first insulation film. Therefore, it is possible to reduce the number of processing apparatuses and steps required for separately forming the plurality of top electrodes, thereby simplifying manufacturing processes and saving manufacturing cost. Furthermore, since an insulation film is formed under an edge region of a top electrode, it is possible to prevent the generation of leakage current and the malfunction of a device caused by the deformation of the top electrode even though the edge region of the top electrode is damaged during a laser-scribing process. Thus, the reliability of electro-optic devices can be improved. | 2011-01-20 |
20110012095 | NON-BLOCKED PHOSPHORESCENT OLEDS - An organic light emitting diode (OLED) architecture in which efficient operation is achieved without requiring a blocking layer by locating the recombination zone close to the hole transport side of the emissive layer. Aryl-based hosts and Ir-based dopants with suitable concentrations result in an efficient phosphorescent OLED structure. Previously, blocking layer utilization in phosphorescent OLED architectures was considered essential to avoid exciton and hole leakage from the emissive layer, and thus keep the recombination zone inside the emissive layer to provide high device efficiency and a pure emission spectrum. | 2011-01-20 |
20110012096 | PHOTOACTIVE NANOSTRUCTURE AND METHOD OF MANUFACTURING SAME - A nanostructure comprising at least one semiconductor nanoparticle bound to a photocatalytic unit of a photosynthetic organism is disclosed. The nanoparticle and a binding between the nanoparticle and the photocatalytic unit are selected such that transfer of electrons from the photocatalytic unit to the nanoparticle is prevented or suppressed relative to transfer of excitons from the nanoparticle to the photocatalytic unit. Uses of same and methods of fabricating devices with same are also disclosed. Nanostructures comprising electrically conductive nanoparticles are also disclosed. | 2011-01-20 |
20110012097 | SEMICONDUCTOR DEVICE AND DISPLAY APPARATUS - A semiconductor device is provided in which, while an organic semiconductor layer is sufficiently protected by a protective film, it is possible to prevent delamination at the protective film interface, thereby achieving good characteristics and improving yield due to improvement in mechanical reliability. A semiconductor device ( | 2011-01-20 |
20110012098 | ORGANIC TRANSISTOR - In order to attain high mobility, large on/off current ratio and excellent storage stability to organic transistor comprising an organic semiconductor layer, the organic semiconductor layer comprises at least one compound represented by the general formula (1). | 2011-01-20 |
20110012099 | OPTOELECTRONIC COMPONENT COMPRISING NEUTRAL TRANSITION METAL COMPLEXES - The invention relates to the use of compositions as emitters or absorbers in an electronic component, wherein the compositions have a first neutral transition metal complex and a second neutral transition metal complex. According to the invention, the first transition metal complex and the second transition metal complex together form a column structure. The invention further relates to a method for the production of electronic components having such compositions. | 2011-01-20 |
20110012100 | METAL COMPLEXES - The present invention relates to metal complexes of the formula (1) and to the use thereof in organic electroluminescent devices, and to organic electroluminescent devices which comprise these metal complexes. | 2011-01-20 |
20110012101 | OLED DEVICE WITH MACO EXTRACTOR - The invention relates to an OLED device with a stack comprising: a light emitting organic layer ( | 2011-01-20 |
20110012102 | ORGANIC ELECTROLUMINESCENCE ELEMENT, AND METHOD FOR PRODUCTION THEREOF - Disclosed is an organic electroluminescence element comprising at least an anode, a light-emitting layer, an intermediate layer and a cathode laminated sequentially in this order, wherein the intermediate layer comprises a salt of an acid of at least one metal selected from the group consisting of molybdenum, niobium, tantalum, titanium and metals belonging to Group IIb and sodium. | 2011-01-20 |
20110012103 | METHOD OF MANUFACTURING VERTICALLY ALIGNED NANOTUBES, METHOD OF MANUFACTURING SENSOR STRUCTURE, AND SENSOR ELEMENT MANUFACTURED THEREBY - Provided is a method of manufacturing a sensor structure, where vertically-well-aligned nanotubes are formed and the sensor structure having an excellent performance can be manufactured at the room temperature at low cost by using the nanotubes. The method of manufacturing a sensor structure includes: (a) forming a lower electrode on a substrate; (b) forming an organic template having a pore structure on the lower electrode; (c) forming a metal oxide thin film in the organic template; (d) forming a metal oxide nanotube structure, in which nanotubes are vertically aligned and upper portions thereof are connected to each other, by removing the organic template through a dry etching method; and (e) forming an upper electrode on the upper portions of the nanotubes. | 2011-01-20 |
20110012104 | Organic light emitting display device and fabricating method thereof - An organic light emitting display includes data lines and scan lines intersecting each other, a scan driving unit for supplying a scan signal to the scan lines, a data driving unit for supplying a data signal to the data lines, and pixels defined at intersection points of the data and scan lines, each pixel having an organic light emitting diode, a first TFT with an inverted staggered top gate structure and connected to the organic light emitting diode, the first TFT including an oxide semiconductor as an active layer, and a second TFT with an inverted staggered bottom gate structure and configured to receive the scan signal from the scan lines, the second TFT including an oxide semiconductor as an active layer. | 2011-01-20 |
20110012105 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to increase an aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over one substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using metal and a channel layer is formed of an oxide semiconductor, and a driver circuit wiring formed using metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode layer and a drain electrode layer are formed using an oxide conductor and a semiconductor layer is formed of an oxide semiconductor, and a display portion wiring formed using an oxide conductor. | 2011-01-20 |
20110012106 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device is provided in which a pixel portion and a driver circuit each including a thin film transistor are provided over one substrate; the thin film transistor in the pixel portion includes a gate electrode layer, a gate insulating layer, an oxide semiconductor layer having an end region with a small thickness, an oxide insulating layer in contact with part of the oxide semiconductor layer, source and drain electrode layers, and a pixel electrode layer; the thin film transistor in the pixel portion has a light-transmitting property; and source and drain electrode layers of the thin film transistor in the driver circuit portion are formed using a conductive material having lower resistance than a material of the source and drain electrode layer in the pixel portion. | 2011-01-20 |
20110012107 | FIELD EFFECT TRANSISTOR - A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10 | 2011-01-20 |
20110012108 | Semiconductor device having process failure detection circuit and semiconductor device production method - A semiconductor device includes a cell array and a plurality of process failure detection circuits each having a layout pattern substantially identical to that of a cell of the cell array in a dummy region arranged around the cell array. Each of the process failure detection circuits includes a dummy pattern that equalizes a degree of density/sparsity of a peripheral part of the cell array with that of a central part of the cell array. The process failure detection circuits include a process failure detection circuit having a layout pattern formed with a stricter pattern margin in at least one manufacturing process, compared with the layout pattern of the cell of the cell array. | 2011-01-20 |
20110012109 | METHOD OF FORMING A GROUP III-NITRIDE CRYSTALLINE FILM ON A PATTERNED SUBSTRATE BY HYDRIDE VAPOR PHASE EPITAXY (HVPE) - A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group III-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group III-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation. | 2011-01-20 |
20110012110 | SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A gallium nitride based field effect transistor having good current hysteresis characteristics in which forward gate leakage can be reduced. In a gallium nitride-based field effect transistor ( | 2011-01-20 |
20110012111 | MANUFACTURING METHOD OF MICRO-ELECTRO-MECHANICAL DEVICE - A method of forming a microstructure body and a semiconductor element for controlling the microstructure body over the same substrate to reduce manufacturing cost, for mass-production of micromachines having a microstructure. In manufacturing a micromachine, a sacrifice layer is formed using a mask material for forming a pattern of a film, and removal of the mask in a region for forming a semiconductor element and removal of the sacrifice layer and the mask in a region for forming a microstructure body are performed by the same step. Specifically, a manufacturing method of a micro-electro-mechanical device is provided wherein a sacrifice layer is selectively formed over an insulating substrate, a semiconductor layer is formed to cover the sacrifice layer, a mask is formed over the semiconductor layer, the semiconductor layer is etched using the mask, and the mask and the sacrifice layer are removed by the same step. | 2011-01-20 |
20110012112 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property. | 2011-01-20 |
20110012113 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - To provide a manufacturing method in which LDD regions with different widths are formed in a self-aligned manner, and the respective widths are precisely controlled in accordance with each circuit. By using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function formed of a diffraction grating pattern or a semi-transparent film, the width of a region with a small thickness of a gate electrode can be freely set, and the widths of two LDD regions capable of being formed in a self-aligned manner with the gate electrode as a mask can be different in accordance with each circuit. In one TFT, both of two LDD regions with different widths overlap a gate electrode. | 2011-01-20 |
20110012114 | Bottom-Gate Thin Film Transistor and Method of Fabricating the Same - A bottom-gate thin film transistor includes a gate electrode, a gate insulating layer and a microcrystalline silicon layer. The gate electrode is disposed on a substrate. The gate insulating layer is made up of silicon nitride and disposed on the gate electrode and the substrate. The microcrystalline silicon layer is disposed on the gate insulating layer and corresponds to the gate electrode, in which a contact interface between the gate insulating layer and the microcrystalline silicon layer has a plurality of oxygen atoms, and concentration of the oxygen atoms ranges between 10 | 2011-01-20 |