02nd week of 2015 patent applcation highlights part 37 |
Patent application number | Title | Published |
20150010973 | FUNGAL STRAINS WITH GENETIC MODIFICATION RELATING TO A CARBOXYLIC ACID TRANSPORTER - The invention relates to fungal strains having at least one genetic modification which leads to a reduction of the activity of at least one fungal carboxylic acid transporter and to a method for producing or using said fungal strains. | 2015-01-08 |
20150010974 | Method for Degrading a Readily-degradable Resin Composition - A method for degrading a readily degradable resin composition comprising an aliphatic polyester (A) which is biodegradable, and an aliphatic polyester (B′) which releases an acid upon hydrolysis and which is biodegradable at a higher degradation rate than that of the aliphatic polyester (A), the method comprising degrading the readily degradable resin composition in an enzyme reaction liquid containing a degradation enzyme, and an acid neutralizing agent incompatible with the enzyme reaction liquid. | 2015-01-08 |
20150010975 | Extraction Solvents Derived from Oil for Alcohol Removal in Extractive Fermentation - In an alcohol fermentation process, oil derived from biomass is hydrolyzed into an extractant available for in situ removal of a product alcohol such as butanol from a fermentation broth. The glycerides in the oil can be catalytically (e.g., enzymatically) hydrolyzed into free fatty acids, which form a fermentation product extractant having a partition coefficient for a product alcohol greater than a partition coefficient of the oil of the biomass for the product alcohol. Oil derived from a feedstock of an alcohol fermentation process can be hydrolyzed by contacting the feedstock including the oil with one or more enzymes whereby at least a portion of the oil is hydrolyzed into free fatty acids forming a fermentation product extractant, or the oil can be separated from the feedstock prior to the feedstock being fed to a fermentation vessel, and the separated oil can be contacted with the enzymes to form the fermentation product extractant. The fermentation product extractant can be contacted with a fermentation broth for in situ removal of a product alcohol. | 2015-01-08 |
20150010976 | REGIO- AND ENANTIOSELECTIVE ALKANE HYDROXYLATION WITH MODIFIED CYTOCHROME P450 - Cytochrome P450 BM-3 from | 2015-01-08 |
20150010977 | BIOPROCESSING - Functionalized substrate materials, for example inorganic particles and/or synthetic polymeric particles, are used to enhance bioprocesses such as saccharification and fermentation. | 2015-01-08 |
20150010978 | TERPENE AND TERPENOID PRODUCTION IN PROKARYOTES AND EUKARYOTES - Terpene synthases are enzymes that directly convert IPP & DMAPP to terpenes, such as fusicoccadiene. Described herein are methods and compositions for the production of terpenes and terpenoids for use as fuel molecules or other useful components. Genetically engineered enzymes capable of producing terpenes and terpenoids are also described. | 2015-01-08 |
20150010979 | METHOD FOR PREPARING IMMOBILIZED ANGIOGENIN - Stabilized angiogenin compositions and methods of preparing a stabilized angiogenin compositions by covalent immobilization on a naturally occurring substrate, such as a polysaccharide substrate, are disclosed. In particular, the polysaccharide substrate includes galactose-rich polysaccharide. | 2015-01-08 |
20150010980 | COMPOSITION FOR EMBEDDED MICROBIAL CULTURE - Disclosed is a composition for embedded three-dimensional microbial culture, the composition including nanofibrillar cellulose and at least one nutrient source. Also disclosed is a method for the manufacture of a composition for embedded three-dimensional microbial culture, the method including the steps of providing nanofibrillar cellulose, mixing the nanofibrillar cellulose with water and at least one nutrient source and optional additives to obtain a mixture, and optionally drying the mixture. | 2015-01-08 |
20150010981 | GH61 GLYCOSIDE HYDROLASE PROTEIN VARIANTS AND COFACTORS THAT ENHANCE GH61 ACTIVITY - The present invention provides various GH61 protein variants comprising various amino acid substitutions. The GH61 protein variants have an improved ability to synergize with cellulase enzymes, thereby increasing the yield of fermentable sugars obtained by saccharification of biomass. In some embodiments, sugars obtained from saccharification are fermented to produce numerous end-products, including but not limited to alcohol. | 2015-01-08 |
20150010982 | Methods and Compositions for Generating Bioactive Assemblies of Increased Complexity and Uses - The present invention concerns methods and compositions for making and using bioactive assemblies of defined compositions, which may have multiple functionalities and/or binding specificities. In particular embodiments, the bioactive assembly is formed using dock-and-lock (DNL) methodology, which takes advantage of the specific binding interaction between dimerization and docking domains (DDD) and anchoring domains (AD) to form the assembly. In various embodiments, one or more effectors may be attached to a DDD or AD sequence. Complementary AD or DDD sequences may be attached to an adaptor module that forms the core of the bioactive assembly, allowing formation of the assembly through the specific DDD/AD binding interactions. Such assemblies may be attached to a wide variety of effector moieties for treatment, detection and/or diagnosis of a disease, pathogen infection or other medical or veterinary condition. | 2015-01-08 |
20150010983 | COMPOSITIONS, METHODS AND USES FOR INDUCING VIRAL GROWTH - Embodiments herein report methods, compositions and uses for inducing and/or accelerating viral growth. In certain embodiments, methods, compositions and uses generally related to copolymer compositions for inducing viral growth, reducing lag time and/or increasing viral plaque size. In other embodiments, methods, compositions and uses of copolymer compositions can be for inducing flaviviral growth, reducing lag in growth and/or increasing plaque size. | 2015-01-08 |
20150010984 | Partial Adaptation for Butanol Production - Provided herein are processes for producing an improved culture of cells comprising an engineered butanol biosynthetic pathway. The processes comprise (a) providing a cell culture of recombinant microorganisms comprising an engineered butanol biosynthetic pathway, wherein the engineered butanol biosynthetic pathway is minimal or not activated; and (b) growing the culture of recombinant microorganisms under adaptive conditions whereby pathway activation is increased to produce an improved cell culture and whereby said improved cell culture is capable of continuing to grow in fermentation. | 2015-01-08 |
20150010985 | METHODS AND COMPOSITIONS FOR IMPROVING SUGAR TRANSPORT, MIXED SUGAR FERMENTATION, AND PRODUCTION OF BIOFUELS - The present disclosure relates to host cells containing a recombinant polynucleotide encoding a polypeptide where the polypeptide transports cellodextrin into the cell. The present disclosure further relates to methods of increasing transport of cellodextrin into a cell, methods of increasing growth of a cell on a medium containing cellodextrin, methods of co-fermenting cellulose-derived and hemicellulose-derived sugars, and methods of making hydrocarbons or hydrocarbon derivatives by providing a host cell containing a recombinant polynucleotide encoding a polypeptide where the polypeptide transports cellodextrin into the cell. The present disclosure relates to host cells containing a recombinant polynucleotide encoding a polypeptide where the polypeptide transports a pentose into the cell, methods of increasing transport of a pentose into a cell, methods of increasing growth of a cell on a medium containing pentose sugars, and methods of making hydrocarbons or hydrocarbon derivatives by providing a host cell containing a recombinant polynucleotide encoding a polypeptide where the polypeptide transports a pentose into the cell. | 2015-01-08 |
20150010986 | Ettlia sp. Strain Having Superior Carbon Dioxide Fixation Ability and Lipid Producing Ability and Use Thereof - Provided are a new microalgae strain and a use thereof, and more particularly, | 2015-01-08 |
20150010987 | METHOD FOR PRODUCING EUGLENA HAVING HIGH WAX ESTER CONTENT - Provided is a method that is for producing | 2015-01-08 |
20150010988 | Method For Removing Protein From A Food - A method for removing protein from a food includes adding a first group of enzymes into a food while cooking the food. The first group of enzymes decomposes protein in the food in a first enzyme reaction. Let a mixture of the first group of enzymes and the food rest after cooling the mixture to a temperature below 45° C. Then, the mixture is boiled to terminate the first enzyme reaction. A second enzyme is added into the mixture after the boiled mixture is cooled to a temperature below 45° C., and let mixture of the first group of enzymes, the food, and the second enzyme rest. The second enzyme carries out a second-stage decomposition of protein in the food in a second enzyme reaction. Then, the mixture of the first group of enzymes, the food, and the second enzyme is boiled to terminate the second enzyme reaction. | 2015-01-08 |
20150010989 | PROCESSING BIOMASS - Biomass (e.g., plant biomass, animal biomass, and municipal waste biomass) is processed to produce useful products, such as fuels. For example, systems are described that can use feedstock materials, such as cellulosic and/or lignocellulosic materials and/or starchy materials, to produce ethanol and/or butanol, e.g., by fermentation. | 2015-01-08 |
20150010990 | INTEGRATED BIO-REACTOR MONITOR AND CONTROL SYSTEM - Systems and methods for automatically controlling conditions of a process are disclosed. In one example, a controller is programmed with a sequence of steps and parameters required to carry out a bioreactor process. A sensor system interacts with the bioreactor to receive information related to a condition of the bioreactor and/or receive a sample from the bioreactor, which it analyzes. The sensor system sends data signals related to the information and/or the sample to a controller, which determines a control signal based on the received information. The controller sends the control signal to the sensor system which, based on the control signal, performs an action that affects a condition of the bioreactor or affects the sensor system itself. | 2015-01-08 |
20150010991 | BIO-SENSING DEVICE - A bio-sensing device includes a first platform, a second platform, at least one first magnetic element, and at least one second magnetic element. The first platform is configured to support a microplate. The microplate has a plurality of wells, each of which stores a reagent and a plurality of microbeads. The second platform is movably placed below the first platform. The first and the second magnetic elements are respectively located on the second platform. The first magnetic element moves along with the second platform to magnetically attract the microbeads in the wells, the second magnetic element moves along with the second platform to demagnetize the microbeads in the wells, and magnetism of the first magnetic element is opposite to magnetism of the second magnetic element. | 2015-01-08 |
20150010992 | OPTICAL READER SYSTEMS AND LATERAL FLOW ASSAYS - Systems and methods for determining the presence and/or amount of analytes in a fluid sample are described. | 2015-01-08 |
20150010993 | SYSTEM FOR CONDUCTING THE IDENTIFICATION OF BACTERIA IN URINE - A system for conducting the identification and quantification of micro-organisms, e.g., bacteria in urine samples which includes: 1) several disposable cartridges for holding four disposable components including a centrifuge tube, a pipette tip having a 1 ml volume, a second pipette tip having a 0.5 ml volume, and an optical cup or cuvette; 2) a sample processor for receiving the disposable cartridges and processing the urine samples including transferring the processed urine sample to the optical cups; and 3) an optical analyzer for receiving the disposable cartridges and configured to analyze the type and quantity of micro-organisms in the urine sample. The disposable cartridges with their components including the optical cups or cuvettes are used in the sample processor, and the optical cups or cuvettes containing the processed urine samples are used in the optical analyzer for identifying and quantifying the type of micro-organism existing in the processed urine samples. | 2015-01-08 |
20150010994 | NON-INVASIVE SENSING OF BIOPROCESS PARAMETERS - A system and method for measuring at least one bioprocess parameter utilizes a barrier that separates an external sensor from a culture medium. The barrier allows analytes to diffuse in and out of the culture vessel, thereby allowing the bioprocess parameter to be measured non-invasively by the external sensor. | 2015-01-08 |
20150010995 | MICROCHIP-BASED APPARATUS FOR EXAMINING PLATELET COMPOSITE FUNCTIONS - There is provided a microchip-based platelet multi-function test apparatus. The apparatus includes a sample container configured to accommodate a blood sample therein, a stirrer that is installed inside the sample container and induces a shear flow in the blood sample, a parallel channel configured to divide and flow the blood stirred by the stirrer into a plurality of paths, a vacuum device that is connected to an end of each parallel channel, maintains constant pressure, allows the stirred blood to flow along the parallel channel, a light source that is installed in a rear side of the parallel channel and radiates light to the parallel channel, and an image sensor that receives light transmitted through the blood in the parallel channel, converts the light into an electrical signal, and measures a flowing distance of a blood flow. | 2015-01-08 |
20150010996 | CELL CULTURE DEVICE HAVING CULTURE MEDIUM REPLACEMENT FUNCTION - Provided is a small-scale cell culture apparatus having a culture medium replacement function for culturing cells in a small number of Petri dishes, the cell culture apparatus being capable of performing automatic replacement of the culture medium and cell culture within the same cavity and significantly reducing the apparatus cost. At least one set of upper and lower discs is arranged inside an incubator chamber | 2015-01-08 |
20150010997 | Methods and Compositions for Producing Vitamin K Dependent Proteins - The present invention relates to methods and compositions for improving the productivity of recombinant vitamin K dependent protein expression in host cells. | 2015-01-08 |
20150010998 | ANTI-HUMAN CCR7 ANTIBODY, HYBRIDOMA, NUCLEIC ACID, VECTOR, CELL, PHARMACEUTICAL COMPOSITION, AND ANTIBODY-IMMOBILIZED CARRIER - An object of the present invention is to provide a novel anti-human CCR7 antibody useful as a therapeutic agent for tissue fibrosis or cancer, and a pharmaceutical composition containing the anti-human CCR7 antibody, and the like. An anti-human CCR7 antibody specifically binding to an extracellular domain of human CCR7, having a heavy chain CDR3 containing an amino acid sequence represented by SEQ ID NO: 7, SEQ ID NO: 17, SEQ ID NO: 27, SEQ ID NO: 37, SEQ ID NO: 47, SEQ ID NO: 57, SEQ ID NO: 67, or SEQ ID NO: 77 is provided. Also provided is an anti-human CCR7 antibody having heavy chain CDRs 1-3 and light chain CDRs 1-3 containing amino acid sequences represented by SEQ ID NOs: 5-10, 15-20, 25-30, 35-40, 45-50, 55-60, 65-70, or 75-80. Preferably, the antibody has an activity of interfering with a CCR7-dependent intracellular signal transduction mechanism caused by CCR7 ligand stimulation. The anti-human CCR7 antibody of the present invention may be used as an active ingredient of a therapeutic agent for tissue fibrosis or cancer. | 2015-01-08 |
20150010999 | SYNTHETIC ATTACHMENT MEDIUM FOR CELL CULTURE - An aqueous cell culture medium composition includes an aqueous cell culture solution configured to support the culture of mammalian cells. The composition further includes a synthetic polymer conjugated to a polypeptide dissolved in the aqueous cell culture solution. The synthetic polymer conjugated to a polypeptide is configured to attach to the surface of a cell culture article under cell culture conditions. Incubation of the aqueous cell culture medium composition on a cell culture surface under cell culture conditions results is attachment to the surface of the synthetic polymer conjugated to the polypeptide. | 2015-01-08 |
20150011000 | Cryopreservation of Biological Cells and Tissues - The method involves placing an oocyte cell in a cell holder ( | 2015-01-08 |
20150011001 | COMPOSITIONS AND METHODS FOR OPTIMIZING CLEAVAGE OF RNA BY RNASE H - The present invention provides compositions and methods for the optimization of cleavage of RNA species by RNase H. In some embodiments, the invention provides oligonucleotides that possess two or more regions of differing conformation, and at least one transitional nucleobase positioned between the regions that is capable of modulating transfer of the helical conformation characteristic of the region bound to the 3′ hydroxy thereof, to the region bound to the 5′ hydroxyl thereof. | 2015-01-08 |
20150011002 | 2,4-Pyrimidinediamine Compounds And Uses As Anti-Proliferative Agents - The present invention provides 2,4-pyrimidinediamine compounds having antiproliferative activity, compositions comprising the compounds and methods of using the compounds to inhibit cellular proliferation and to treat proliferative diseases such as tumorigenic cancers. | 2015-01-08 |
20150011003 | CULTURE MEDIUM FOR PROLIFERATING STEM CELL, WHICH CONTAINS SULFATED COMPOUND - A medium which comprises a fibroblast growth factor (FGF), and a sulfated compound or a pharmaceutically acceptable salt thereof at a concentration which promotes the growth of a stem cell in the presence of FGF, is useful for culturing stem cells. | 2015-01-08 |
20150011004 | Systems and Methods for Expanding High Density Non-Adherent Cells - Embodiments described herein generally relate to systems and methods for promoting the expansion of high density non-adherent cells through the use of a cell growth chamber, a mass transfer device, and a fluid circulation loop. Improved cell growth is achieved in the cell growth chamber by using a chamber having a particular orientation and shape, e.g., conical, to create a media-rich reservoir for growing cells. By placing the chamber in a vertical position, the force of media flow along the chamber walls is substantially equal and opposite to the gravitational force on the cells. The interaction of these forces maintains the non-adherent cells in suspension. The use of the cell growth chamber in conjunction with the mass transfer device and fluid circulation loop(s) creates efficiencies by relying on the cumulative and combined features of the devices. | 2015-01-08 |
20150011005 | METHOD FOR PRODUCING CELL HAVING NUCLEIC ACID INTRODUCED THEREIN - A method for producing a cell having nucleic acid introduced therein and having low cytotoxicity is useful in primary cells and slowly dividing cells, for which nucleic acid introduction is difficult with conventional techniques. A method for introducing nucleic acid into a cell includes the steps of mixing a nucleic acid with a temperature sensitive material at a temperature lower than the cloud point of the temperature sensitive material, the temperature sensitive material being formed by adding 2-amino-2-hydroxymethyl-1,3-propanediol to a temperature-sensitive polymer material having 2-N,N-dimethylaminoethyl methacrylate and/or a derivative thereof as the main polymer component, flow coating a culture vessel with the resulting mixed liquid, and culturing a cell suspension provided to the culture vessel at a temperature higher than the cloud point. | 2015-01-08 |
20150011006 | LENTIVIRAL TRIPLEX DNA, AND VECTORS AND RECOMBINANT CELLS CONTAINING LENTIVIRAL TRIPLEX DNA - The present invention provides nucleic acid, vectors, viruses, and recombinant cells comprising triple-stranded structures, such as those resulting from central initiation and termination of HIV-1 reverse transcription at the center of HIV-1 linear DNA genomes. These triplex structures can act as a cis-determinant of HIV-1 DNA nuclear import, allowing infection of non-dividing target cells. In one aspect, the presence of the DNA triplex sequence in an HIV vector strongly stimulates gene transfer in hematopoietic stem cells. The invention also provides methods of using these triplex structures for making recombinant cells, as well as methods of using the recombinant cells to express proteins of interest both in vitro and in vivo. | 2015-01-08 |
20150011007 | Synthetic Transcriptional Control Elements and Methods of Generating and Using Such Elements - Provided herein are nucleic acid constructs that contain a synthetic control element that includes a cis-regulator of translation, and an adapter translation-coupled regulator of transcription. Further provided herein are nucleic acid constructs that contain nucleic acid sequences under the control of the synthetic control elements. Also provided are compositions and methods related to the nucleic acid constructs. | 2015-01-08 |
20150011008 | METHOD OF TRANSFERRING GENE INTO ALGAL CELL INVOLVING UTILIZING MULTIPLE SQUARE-WAVE PULSES IN THREE STEPS - To provide a technology that solves the above-mentioned problems, and is directly applicable to eukaryotic algal cells with cell-wall, the technology enabling gene transfer and transformation to be performed with high efficiency and good reproducibility irrespective of species of algae. Also provided is a method of transferring an exogenous gene into a eukaryotic algal cell, the method comprising performing electroporation using multiple square-wave pulses to the solution containing a cell of a green alga with cell-wall, and a nucleic acid molecule by the following three steps: applying a square-wave electric pulse (first electric pulse) with a high voltage for a short period of time under the condition that its total electric energy falls within a predetermined range; then applying a square-wave electric pulse (second electric pulse) with a low voltage for a long period of time two or more times; and then applying a square-wave electric pulse (third electric pulse) that is opposite in polarity to the second electric pulse, with a low voltage for a long period of time, two or more times. | 2015-01-08 |
20150011009 | Method and Apparatus For Determining A Calorific Value Parameter, As Well As A Gas-Powered System Comprising Such An Apparatus - A method and an apparatus for determining the calorific value parameter describing the calorific value of a gaseous fuel. The apparatus comprises a test burner with a test combustion chamber. An air ratio sensor is arranged in an exhaust gas duct of the test burner and measures an air ratio signal that corresponds to the air ratio of the exhaust gas. As a function of the received air ratio signal, at least one setting signal is generated for a test supply unit via a test control unit. The setting signal controls the amount and/or the proportion of a gaseous fuel or an oxygen-containing gas that is supplied to the test combustion chamber. A calorific value sensor arrangement is provided in the combustion chamber and has an ionization sensor and, a temperature sensor. The sensor signal of the calorific value sensor is transmitted to a determination unit. | 2015-01-08 |
20150011010 | OPTODE FOR DETERMINING CHEMICAL PARAMETERS - The invention is related to an optode for determining chemical parameters of a sample wherein the optode consists of a polymer matrix consisting of sulfonated polyether ether ketone (SPEEK) in which a sensor dye is immobilized or more than one sensor dye is immobilized, wherein at least one of the immobilized sensor dyes is pH-sensitive. | 2015-01-08 |
20150011011 | METHOD FOR PERFORMING IMMUNOASSAYS UNDER WEIGHTLESSNESS - A method for controlled movement of magnetic carriers in a sample volume for performing immunoassays under weightless or reduced-weight conditions, wherein the magnetic carriers are moved inside the sample volume by means of permanent magnets movably arranged relative to at least one spatial axis of the sample volume. | 2015-01-08 |
20150011012 | SPECIMEN CONCENTRATION CONTAINER AND SPECIMEN CONCENTRATING METHOD USING SAME - A specimen concentration container contains a specimen-containing liquid mixture, and the liquid mixture is concentrated in the specimen concentration container. The specimen concentration container includes: a tubular container main body including an upper surface on which an upper surface opening portion is formed; an upper surface opening portion communicating with an inside of the container main body; a specimen concentration portion formed at a bottom portion side of the container main body and containing the concentrated liquid mixture; and a specimen lid provided in the container main body and configured to cover the upper surface opening portion. | 2015-01-08 |
20150011013 | APPARATUS, SYSTEM, AND METHOD FOR COLLECTING A TARGET MATERIAL - This disclosure is directed to an apparatus, system and method for retrieving a target material from a suspension. A system includes a processing vessel, such as an Eppendorf tube, a syringe or a test tube, and a collector. The collector is sized and shaped to fit into a primary vessel, such as a test tube. The collector funnels the target material from the suspension through a cannula and into the processing vessel. The cannula extends into a cavity at a first end of the collector that holds the processing vessel. The collector includes a funnel at a second end in fluid communication with the cannula. In one implementation, the processing vessel includes at least one displacement fluid to be expelled, such that the at least one displacement fluid pushes the target material into the collector. | 2015-01-08 |
20150011014 | Method Of Manufacturing And Applications Of Biofunctionalized Amorphous Metal Colloidal Suspensions - Disclosed is a process for enhancing the sensitivity of magnetic detection of molecules of interest. The process comprises creating amorphous magnetic metal nanoparticles from a bulk target material comprising at least one magnetic transition metal selected from the group consisting of Ni, Co, and Fe and at least one glass former selected from the group consisting of P, B and Si through the use of a pulsed laser ablation method. The produced amorphous magnetic metal nanoparticles have a large magnetic moment and a large magnetic permeability especially compared to crystalline nanoparticles. One use of the present nanoparticles is in a magnetic immunoassay method. | 2015-01-08 |
20150011015 | SENSOR CHIP FOR SPFS MEASUREMENT, SPFS MEASUREMENT METHOD USING SENSOR CHIP FOR SPFS MEASUREMENT, AND SPFS MEASUREMENT DEVICE EQUIPPED WITH SENSOR CHIP FOR SPFS MEASUREMENT - [Problem] To provide a sensor chip for SPFS measurement, by which, irrespective of environmental conditions, fluctuations are low in characteristics such as signal, noise, or detection sensitivity, quantitative property can be ensured, and a highly precise and accurate SPFS measurement can be carried out. [Solution] A sensor chip for SPFS measurement which has a dielectric member having been produced by carrying out injection molding of a resin, when viewing from the metal thin film-formed surface side of the dielectric member and taking as b the distance of the side end surface position of the resin inlet to the position on the metal thin film-formed surface that is farthest from the side end surface position of the resin inlet, the center of a ligand immobilization part is located in the area between the 3b/8 position and the 6b/8 position from the side end surface position of the resin inlet. | 2015-01-08 |
20150011016 | Dispersive Pipette Extraction Tip and Methods for Use - A pipette tip device for use in dispersive SPE. The device includes a pipette tip having a lower barrier, loose sorbent that is freely moveable during the extraction process, and a baffle system that is shaped to disrupt the flow of liquid sample that is aspirated into the pipette tip. The baffle system includes an insert that may be separate from or monolithic with the interior of the pipette tip. | 2015-01-08 |
20150011017 | DIAGNOSIS AND RISK STRATIFICATION BY MEANS OF THE NOVEL MARKER CT-PROADM - The invention relates to a novel diagnostic marker CT-proADM (C-terminal fragment of preproADM, SEQ ID No. 1) for diagnosing and/or stratifying the risk of diseases. Also disclosed is a method for diagnosing and/or stratifying the risk of diseases, particularly cardiovascular diseases, cardiac insufficiency, and infections and/or inflammations of the lungs and respiratory tract. In said method, the CT-proADM (SEQ ID No. 1) marker, or a partial peptide of fragment thereof, or said marker contained in a marker combination (panel, cluster) is determined in a patient who is to be examined. The invention further relates to a diagnostic apparatus as well as a kit for carrying out said method. | 2015-01-08 |
20150011018 | DEVICE AND METHODS FOR THE IMMUNOLOGICAL IDENTIFICATION OF CEREBROSPINAL FLUID - The present disclosure relates to detection of the presence or absence of cerebrospinal fluid (CSF) in a sample by the detection of one or more antigens that are enriched in CSF compared to their levels in other bodily fluids. The devices and methods are suitable for the detection of the presence or absence of cerebrospinal fluid in samples of mixed bodily fluids from a wide variety of human populations crossing ethnicity, age, gender, health status and genetic variability. | 2015-01-08 |
20150011019 | EARLY BIOMARKERS OF AGE-RELATED LOW-GRADE INFLAMMATION - The present invention relates to a method for predicting the risk of acquiring an age-related low-grade inflammation for a subject, said method comprising a) providing a biological sample from a subject, b) determining in said sample the level of at least one biomarker selected from the group consisting of a compound of molecular weight between 859-863 g/mol and which is an alkylacylphosphatidylcholine, a compound of molecular weight between 861-865 g/mol and which is a diacylphosphatidylcholine, a compound of molecular weight between 791-794 g/mol and which is an alkylacylphosphatidylcholine, a compound of molecular weight between 522-525 g/mol and which is a monoacylphosphatidylcholine, octadecanoylcarnitine (C18), and tryptophan, c) comparing the level of the at least one biomarker to a reference level, and d) determining whether said subject is likely to be at risk of acquiring an age-related low-grade inflammation, when the level of biomarker(s) deviate significantly from the respective reference level. | 2015-01-08 |
20150011020 | SYSTEM AND METHOD FOR DETECTION OF TARGET SUBSTANCES - A system and method for detecting harmful substances within a consumable sample comprising: receiving a consumable sample at a first chamber of a test container; transforming the consumable sample into a homogenized sample upon processing of the consumable sample; delivering the homogenized sample to a second chamber of the test container, wherein the second chamber is configured to receive the homogenized sample comprises an outlet port; mixing the homogenized sample with a process reagent within the second chamber, thereby producing a dispersion; transmitting a volume of the dispersion to an analysis chamber, of the test container, configured to position a detection substrate proximal the port of the second chamber and comprising a detection window that enables detection of presence of the allergen; and detecting presence of the allergen within the consumable sample by way of an optical sensor configured to detect signals indicative of the allergen through the detection window. | 2015-01-08 |
20150011021 | Method for Forming Biochips and Biochips With Non-Organic Landings for Improved Thermal Budget - The present disclosure provides biochips and methods of fabricating biochips. The method includes combining three portions: a transparent substrate, a first substrate with microfluidic channels therein, and a second substrate. Through-holes for inlet and outlet are formed in the transparent substrate or the second substrate. Various non-organic landings with support medium for bio-materials to attach are formed on the first substrate and the second substrate before they are combined. In other embodiments, the microfluidic channel is formed of an adhesion layer between a transparent substrate and a second substrate with landings on the substrates. | 2015-01-08 |
20150011022 | METHODS OF DIVIDING LAYOUTS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME - Target pattern layouts that include lower and upper target patterns are designed. Each lower target pattern is combined with a upper target pattern that at least partially overlaps a top surface thereof to form combination structures. The combination structures are divided into first and second combination structures. A first target pattern is formed from the lower target pattern in the first combination structure and a third target pattern is formed from the upper target pattern in the first combination structure. The first and third target patterns are formed in first and third lithography processes, respectively. A second target pattern is formed from the lower target pattern in the second combination structure and a fourth target pattern is formed from the upper target pattern in the second combination structure. The second and fourth target patterns are formed in second and fourth lithography processes, respectively. | 2015-01-08 |
20150011023 | MULTIPLE-PATTERNED SEMICONDUCTOR DEVICE - A multiple-patterned semiconductor device and a method of manufacture are provided. The semiconductor device includes a conductive layer. The conductive layer includes conductive tracks which may be defined by photomasks. The conductive tracks may have quality characteristics. Distinct quality characteristics of distinct conductive tracks may be compared. Based on the comparison, signals and supply voltage may be routed on particular conductive tracks. | 2015-01-08 |
20150011024 | ANALYSIS DEVICE, ANALYSIS METHOD, FILM FORMATION DEVICE, AND FILM FORMATION METHOD - An analysis device includes an X-ray generation part configured to generate four monochromatic X-rays with different energies to irradiate a sample, an electrically conductive sample stage configured to place the sample thereon and formed of an electrically conductive material, an electrode configured to detect an electric current carried by irradiating the sample with the four monochromatic X-rays with different energies, and an electric power source configured to apply a voltage between the electrically conductive sample stage and the electrode, wherein the four monochromatic X-rays with different energies are X-rays included within a range from an absorption edge of a compound semiconductor included in the sample to a higher energy side of 300 eV. | 2015-01-08 |
20150011025 | ENHANCED SELENIUM SUPPLY IN COPPER INDIUM GALLIUM SELENIDE PROCESSES - A system for depositing selenium on a substrate comprises includes a substrate carrier including a body, means for holding the substrate, and a plurality of selenium vapor outlets formed in the body to direct a flux of selenium vapor onto the substrate. A selenium supply container provides selenium vapor to the selenium vapor outlets. At least one temperature sensor is coupled to the substrate carrier to sense temperature of the substrate. A heat source is positioned to heat the substrate. A controller is coupled to the temperature sensor and the heat source. | 2015-01-08 |
20150011026 | PROCESSING METHOD, PROCESSING APPARATUS, LITHOGRAPHY APPARATUS, AND METHOD OF MANUFACTURING ARTICLE - The present invention provides a processing method of processing a first signal obtained by detecting an alignment mark including a plurality of mark elements to obtain a position of the alignment mark, the method including steps of performing filtering to the first signal to generate a second signal, and obtaining the position of the alignment mark based on the second signal, wherein the filtering uses a plurality of filters by which a plurality of weights are respectively given to the plurality of mark elements, all of the plurality of weights being not the same for obtaining the position. | 2015-01-08 |
20150011027 | 3D NAND STAIRCASE CD CONTROL BY USING INTERFEROMETRIC ENDPOINT DETECTION - Embodiments of the present disclosure provide methods for forming stair-like structures with accurate profiles control in manufacturing three dimensional (3D) stacking of semiconductor chips using precise photoresist trimming process endpoint control. In one example, a method of determining a photoresist trimming endpoint for forming stair-like structures on a substrate includes performing a trimming process on a substrate to trim a patterned photoresist layer disposed on a film stack from a first width to a second width in a processing chamber, wherein the patterned photoresist layer exposes a portion of the film stack uncovered by the patterned photoresist layer during the trimming process, directing an optical signal to a surface of the patterned photoresist layer while trimming the patterned photoresist layer, collecting a return reflected optical signal reflected from the photoresist layer, and determining a trimming endpoint by analyzing the return optical signal reflected from the photoresist layer. | 2015-01-08 |
20150011028 | STACK TYPE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING AND TESTING THE SAME - There are proposed a stack type semiconductor device and a method of fabricating and testing the same. A stack type semiconductor device according to an embodiment of the present invention includes a plurality of contact pads externally exposed, a via array electrically connected to the contact pads, a semiconductor substrate configured to have vias, forming the via array, electrically conductive with each other or insulated from each other, and a bias pad configured to supply a bias to the semiconductor substrate, wherein the semiconductor substrate may be subject to back-grinding. | 2015-01-08 |
20150011029 | NETWORK OF SEMICONDUCTOR STRUCTURES WITH FUSED INSULATOR COATING - Networks of semiconductor structures with fused insulator coatings and methods of fabricating networks of semiconductor structures with fused insulator coatings are described. In an example, a method of fabricating a semiconductor structure involves forming a mixture including a plurality of discrete semiconductor nanocrystals. Each of the plurality of discrete semiconductor nanocrystals is discretely coated by an insulator shell. The method also involves adding a base to the mixture to fuse the insulator shells of each of the plurality of discrete nanocrystals, providing an insulator network. Each of the plurality of discrete semiconductor nanocrystals is spaced apart from one another by the insulator network. The base one such as, but not limited to, LiOH, RbOH, CsOH, MgOH, Ca(OH) | 2015-01-08 |
20150011030 | FLEXIBLE ORGANIC LIGHT EMITTING DISPLAY AND METHOD IN AN IN-CELL STRUCTURE HAVING A TOUCH ELECTRODE ARRAY FOR MANUFACTURING THE SAME - Disclosed are an organic light emitting display that enables realization of a thin film shape and flexibility, and exhibits superior contact properties in touch pads based on an improved structure, and a method for manufacturing the same, wherein a distance between the outermost surface of the touch pad portion and the outermost surface of the dummy pad portion in the touch pad portion is smaller than the distance in a neighboring portion adjacent to the touch pad portion. | 2015-01-08 |
20150011031 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DIODE - Provided is a method of manufacturing an organic light emitting diode. The method of manufacturing an organic light emitting diode includes forming a light scattering layer on a substrate, forming a metal mask layer on the light scattering layer, forming a metal mask pattern by performing a heat treatment process on the metal mask layer, forming a nano structure by pattering the light scattering layer by using the metal mask pattern as an etching mask, and forming a planarizing layer to cover the nano structure on the substrate, wherein the heat treatment process is performed at temperature of about 80° C. to about 200° C. | 2015-01-08 |
20150011032 | METHOD FOR FABRICATING A LIQUID CRYSTAL DISPLAY DEVICE COMPRISING AN ALIGNMENT FILM THAT INCLUDES A PHOTOLYTIC POLYMER AND A NON-PHOTOLYTIC POLYMER - A method for fabricating a liquid crystal display device including a TFT substrate having an alignment film formed thereon, an opposing substrate, and a liquid crystal layer sandwiched therebetween. The alignment film on the TFT substrate includes a photolytic polymer made from a first precursor including cyclobutane, and a non-photolytic polymer made from a second precursor. The method includes the steps of depositing a mixture material including the first precursor and the second precursor in which the second precursor settles more on an upper surface of the TFT substrate than the first precursor, imidizing the mixture material, and irradiating the mixture material with ultraviolet light for photo-alignment, and after irradiating, heating the mixture material to form the alignment film. | 2015-01-08 |
20150011033 | MASK ASSEMBLY AND METHOD OF FABRICATING ORGANIC LIGHT EMITTING DISPLAY DEVICE USING THE SAME - A mask assembly and a method of fabricating an organic light emitting display device using the same are provided. The mask assembly includes: a mask frame including a window therein; and a mask which is disposed on the window and fixed to the mask frame, wherein the mask includes a plurality of open parts and a plurality of blocked parts which extend in a column direction. Each open part and each blocked part may alternately be arranged in a row direction. Each open part may include a plurality of pixel openings and a plurality of pixel connection openings, which are alternately arranged in the column direction, and a maximum width of the pixel opening may be larger than a maximum width of the pixel connection opening. | 2015-01-08 |
20150011034 | Display Device - A manufacturing method of a display device having an array substrate includes the steps of forming a projection of an organic material in a pixel on the array substrate by patterning a photosensitive material or by inkjet, forming a TFT on the array substrate, wherein a source electrode of the TFT is formed to extend on at least part of the upper surface of the projection, forming an inorganic passivation layer over the TFT and over at least part of the upper surface of the projection, forming an organic passivation layer over the inorganic passivation layer, forming an upper insulating layer over at least part of the organic passivation layer, forming a contact hole in the inorganic passivation layer and the upper insulation layer over the upper surface of the projection, and forming a pixel electrode on the upper insulation layer which contacts the source electrode. | 2015-01-08 |
20150011035 | METHOD FOR FABRICATING AN INTEGRATED DEVICE - A method for fabricating an integrated device includes the following steps. First, a multi-layered structure is formed on a substrate, wherein the multi-layered structure is embedded in a lower isolation layer. Then, a bottom conductive pattern and a top conductive pattern are formed on a top surface of the lower isolation layer, wherein the top conductive pattern is on a top surface of the bottom conductive pattern. Afterwards, portions of the top conductive pattern are removed to expose portions of the bottom conductive pattern. Subsequently, an upper isolation layer is deposited on the lower isolation layer so that the upper isolation layer can be in direct contact with the portions of the bottom conductive pattern. Finally, portions of the lower isolation layer and the upper isolation layer are removed so as to expose portions of the substrate. | 2015-01-08 |
20150011036 | Method for manufacturing a solar cell - The invention relates to a method for manufacturing a solar cell from a semiconductor substrate of a first conductivity type, the semiconductor substrate having a front side and a back side, the method comprising in this sequence: creating by diffusion of a dopant of a second conductivity type a second conductivity-type doped layer in the front side and the back side, during diffusion forming of a dopant containing glassy layer on the front and back side; removing the second conductivity-type doped layer and the dopant containing glassy layer from the back side by a single sided etching process, while maintaining the dopant-containing glassy layer in the front side; creating a Back Surface Field (BSF) layer of the first conductivity type on the back side by implantation of a dopant of the first conductivity type into the back side; removing the dopant containing glassy layer from the front side of said substrate by an etching process; surface oxidation by heating said substrate for a predetermined period of time and to a predetermined temperature in oxidizing atmosphere to form passivation layers on the front side and the back side. | 2015-01-08 |
20150011037 | CONVERTER PLATE, A RADIATION-EMITTING DEVICE HAVING SUCH A CONVERTER PLATE AND A METHOD OF PRODUCING SUCH A CONVERTER PLATE - A converter plate adapted to be attached to a radiation-emitting semiconductor chip, the converter plate containing a base material made of glass in which a plurality of openings is arranged, in each of which a converter material is installed. | 2015-01-08 |
20150011038 | TWO-STAGE PACKAGING METHOD OF IMAGE SENSORS - A two-stage packaging method of image sensors is disclosed. The packaging method includes the following steps: providing a substrate, fixing an image sensor chip on the substrate, fixing a transparent board on the image sensor chip, electrically connecting the image sensor chip and the substrate, forming a first encapsulant lay, and forming a second encapsulant layer. The two-stage packaging method prevents excessive pressure from being generated by formation of the encapsulant layers during the image sensor packaging process. Such excessive pressure, if generated, may result in position shift of the image sensor chip or damage of the bonding wires. The two-stage packaging method can increase the yield of the image sensor packaging process as well as the sensitivity of image sensors, thereby improving the quality and production of image sensor packaging while lowering the manufacturing costs. | 2015-01-08 |
20150011039 | MANUFACTURE OF SOLAR CELL MODULE - A solar cell module is manufactured by forming silicone coating films ( | 2015-01-08 |
20150011040 | DOUBLE LAYER INTERLEAVED P-N DIODE MODULATOR - A method for fabricating an optical modulator includes forming n-type layer, a first oxide portion on a portion of the n-type layer, and a second oxide portion on a second portion of the n-type layer, patterning a first masking layer over the first oxide portion, portions of a planar surface of the n-type layer, and portions of the second oxide portion, implanting p-type dopants in the n-type layer to form a first p-type region and a second p-type region, removing the first masking layer, patterning a second masking layer over the first oxide portion, a portion of the first p-type region, and a portion of the n-type layer, and implanting p-type dopants in exposed portions of the n-type layer, exposed portions of the first p-type region, and regions of the n-type layer and the second p-type region disposed between the substrate and the second oxide portion. | 2015-01-08 |
20150011041 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME - A circuit layer is formed on a surface of a substrate and includes a transistor. A photoelectric conversion element includes a photoelectric conversion layer of a chalcopyrite-type semiconductor provided between a first electrode and a second electrode. A supply layer is formed between the circuit layer and the photoelectric conversion layer and contains an Ia group element. Diffusion of the Ia group element to the photoelectric conversion layer improves the photoelectric conversion efficiency. A protective layer is formed between the supply layer and the circuit layer and prevents the diffusion of the Ia group element to the circuit layer. | 2015-01-08 |
20150011042 | METHOD OF MAKING PHOTOVOLTAIC DEVICES INCORPORATING IMPROVED PNICTIDE SEMICONDUCTOR FILMS - The present invention uses a treatment that involves an etching treatment that forms a pnictogen-rich region on the surface of a pnictide semiconductor film The region is very thin in many modes of practice, often being on the order of only 2 to 3 nm thick in many embodiments. Previous investigators have left the region in place without appreciating the fact of its presence and/or that its presence, if known, can compromise electronic performance of resultant devices. The present invention appreciates that the formation and removal of the region advantageously renders the pnictide film surface highly smooth with reduced electronic defects. The surface is well-prepared for further device fabrication. | 2015-01-08 |
20150011043 | SOLAR CELL AND METHOD FOR MANUFACTURING SAME - A solar cell is provided with: a semiconductor substrate; an insulating layer formed of a silicon compound or a metal compound, and having a predetermined pattern over the substrate; and a surface covering layer formed of an amorphous semiconductor, having a same pattern as the insulating layer, and that directly contacts the insulating layer. | 2015-01-08 |
20150011044 | COMPOSITION FOR TIN OXIDE SEMICONDUCTOR AND METHOD OF FORMATION OF TIN OXIDE SEMICONDUCTOR THIN FILM - Provided is a composition for forming tin oxide semiconductor including a tin precursor compound, an antimony precursor compound, and a solvent, according to an aspect of the present disclosure. Also provided is a method of forming a tin oxide semiconductor thin film. The method includes preparing a composition including a tin precursor compound and an antimony precursor compound dissolved in a solvent; disposing the composition on a substrate; and performing a heat treatment on the substrate coated with the composition. | 2015-01-08 |
20150011045 | METHOD OF FORMING OXIDE THIN FILM AND METHOD OF FABRICATING OXIDE THIN FILM TRANSISTOR USING HYDROGEN PEROXIDE - Provided are a method of forming an oxide thin film using hydrogen peroxide, and a method of fabricating an oxide thin film transistor using hydrogen peroxide. Embodiments of the present disclosure provide methods of forming an oxide film, including: mixing hydrogen peroxide with a precursor solution in which a precursor material is dissolved in a solvent; applying the precursor solution mixed with the hydrogen peroxide to a substrate; heat treating the substrate. | 2015-01-08 |
20150011046 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device in which the threshold voltage is adjusted is provided. The semiconductor device includes a first semiconductor, an electrode electrically connected to the first semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the first semiconductor. By performing heat treatment at higher than or equal to 125° C. and lower than or equal to 450° C. and, at the same time, keeping a potential of the gate electrode higher than a potential of the electrode for 1 second or more, the threshold voltage is increased. | 2015-01-08 |
20150011047 | METHOD FOR FABRICATING IGZO LAYER AND TFT - Methods for fabricating an IGZO layer and fabricating TFT are provided in the present invention. The method for fabricating TFT includes the following steps: (1) depositing an IGZO layer and forming a surface oxidizing gas protective layer on the IGZO layer; (2) coating the IGZO layer with a photoresist, and then subjecting the photoresist to an exposing and developing process to form a photoresist pattern; and (3) subjecting the IGZO layer to an etching process, and then removing the photoresist. By forming an oxidizing gas protective layer, the present methods for fabricating an IGZO layer and fabricating TFT can effectively reduce the effect of hydrogen atom on IGZO layer and avoid the change of IGZO layer from semiconductor to conductor, thereby improving the stability of the IGZO layer and thus the TFT, and reducing the negative bias of threshold voltage generated by the long-term continuous use of the device. | 2015-01-08 |
20150011048 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a semiconductor device in which the threshold value is controlled. Furthermore, to provide a semiconductor device in which a deterioration in electrical characteristics which becomes more noticeable as a transistor is miniaturized can be suppressed. The semiconductor device includes a first semiconductor film, a source electrode and a drain electrode electrically connected to the first semiconductor film, a gate insulating film, and a gate electrode in contact with the gate insulating film. The gate insulating film includes a first insulating film and a trap film, and charge is trapped in a charge trap state in an interface between the first insulating film and the trap film or inside the trap film. | 2015-01-08 |
20150011049 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to provide a highly reliable semiconductor device including a thin film transistor having stable electric characteristics. In addition, another object is to manufacture a highly reliable semiconductor device at low cost with high productivity. In a method for manufacturing a semiconductor device including a thin film transistor including an oxide semiconductor layer as a channel formation region, the oxide semiconductor layer is heated under a nitrogen atmosphere to lower its resistance, thereby forming a low-resistance oxide semiconductor layer. Further, resistance of a region of the low-resistance oxide semiconductor layer, which is overlapped with a gate electrode layer, is selectively increased, thereby forming a high-resistance oxide semiconductor layer. Resistance of the oxide semiconductor layer is increased by forming a silicon oxide film in contact with the oxide semiconductor layer by a sputtering method. | 2015-01-08 |
20150011050 | BRIDGE INTERCONNECT WITH AIR GAP IN PACKAGE ASSEMBLY - Embodiments of the present disclosure are directed towards techniques and configurations for a bridge interconnect assembly that can be embedded in a package assembly. In one embodiment, a package assembly includes a package substrate configured to route electrical signals between a first die and a second die and a bridge embedded in the package substrate and configured to route the electrical signals between the first die and the second die, the bridge including a bridge substrate, one or more through-hole vias (THVs) formed through the bridge substrate, and one or more traces disposed on a surface of the bridge substrate to route the electrical signals between the first die and the second die. Routing features including traces and a ground plane of the bridge interconnect assembly may be separated by an air gap. Other embodiments may be described and/or claimed. | 2015-01-08 |
20150011051 | Package Systems Having Interposers - A package system includes a first integrated circuit disposed over an interposer. The interposer includes at least one molding compound layer including a plurality of electrical connection structures through the at least one molding compound layer. A first interconnect structure is disposed over a first surface of the at least one molding compound layer and electrically coupled with the plurality of electrical connection structures. The first integrated circuit is electrically coupled with the first interconnect structure. | 2015-01-08 |
20150011052 | PIN ATTACHMENT - A method for making a microelectronic package includes the steps of providing a microelectronic assembly that further includes a substrate with a plurality of conductive elements thereon, a carrier, and a plurality of substantially rigid metal elements extending from the carrier and joined to the conductive elements; and removing the carrier from the microelectronic assembly to expose contact surfaces of the respective ones of the plurality of metal elements remote from the first conductive pads. | 2015-01-08 |
20150011053 | SEMICONDUCTOR DEVICE AND METHOD OF ASSEMBLING SAME - A semiconductor device has a die support and external leads formed integrally from a single sheet of electrically conductive material. A die mounting substrate is mounted on the die support, with bonding pads coupled to respective external connection pads on an external connector side of the substrate. A die is attached to the die mounting substrate with die connection pads. Bond wires selectively electrically couple the die connection pads to the external leads and the bonding pads and electrically conductive external protrusions are mounted to the external connection pads. An encapsulant covers the die and bond wires. The external protrusions are located at a central region of a surface mounting side of the package and the external leads project outwardly from locations near the die support towards peripheral edges of the package. | 2015-01-08 |
20150011054 | FABRICATING METHOD OF ARRAY STRUCTURE - An array structure, which includes a TFT, a passivation layer, a pixel electrode, a first connecting layer and a first spacer is provided. The TFT includes a gate, a source and a drain. The passivation layer overlays the TFT. The pixel electrode is located on the passivation layer. The first connecting layer is located on the pixel electrode and electrically connected to the pixel electrode and the drain. The first spacer is located on the first connecting layer. | 2015-01-08 |
20150011055 | MANUFACTURING METHOD OF LOW TEMPERATURE POLY-SILICON TFT ARRAY SUBSTRATE - A manufacturing method of an LTPS-TFT array substrate is provided. The exemplary method comprises a step of sequentially forming a poly-silicon layer and a data-line-metal layer on a base substrate, and performing a patterning process by using a third mask to simultaneously form an active layer and source and drain electrodes, the active layer being provided on the gate insulating layer and corresponding to the gate electrode, and the source and drain electrodes being provided on the active layer. | 2015-01-08 |
20150011056 | Variation Resistant MOSFETs with Superior Epitaxial Properties - Variation resistant metal-oxide-semiconductor field effect transistors (MOSFET) are manufactured using a high-K, metal-gate ‘channel-last’ process. Between spacers formed over a well area having separate drain and source areas, a recess in the underlying is formed using a crystallographic etch to provide [111] boundaries adjacent the source and drain regions. An ion implant step localized by the cavity results in a localized increase in well-doping directly beneath the recess. Within the recess, an active region is formed using an un-doped or lightly doped epitaxial layer, deposited at a very low temperature. A high-K dielectric stack is formed over the lightly doped epitaxial layer, over which a metal gate is formed within the cavity boundaries. | 2015-01-08 |
20150011057 | METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS - A method for forming an enhancement mode GaN HFET device with an isolation area that is self-aligned to a contact opening or metal mask window. Advantageously, the method does not require a dedicated isolation mask and the associated process steps, thus reducing manufacturing costs. The method includes providing an EPI structure including a substrate, a buffer layer a GaN layer and a barrier layer. A dielectric layer is formed over the barrier layer and openings are formed in the dielectric layer for device contact openings and an isolation contact opening. A metal layer is then formed over the dielectric layer and a photoresist film is deposited above each of the device contact openings. The metal layer is then etched to form a metal mask window above the isolation contact opening and the barrier and GaN layer are etched at the portion that is exposed by the isolation contact opening in the dielectric layer. | 2015-01-08 |
20150011058 | Method of Manufacturing HEMTs with an Integrated Schottky Diode - An embodiment of a transistor device includes a compound semiconductor material on a semiconductor carrier and a source region and a drain region spaced apart from each other in the compound semiconductor material with a channel region interposed between the source and drain regions. A Schottky diode is integrated with the semiconductor carrier, and contacts extend from the source and drain regions through the compound semiconductor material. The contacts are in electrical contact with the Schottky diode so that the Schottky diode is connected in parallel between the source and drain regions. In another embodiment, the integrated Schottky diode is formed by a region of doped amorphous silicon or doped polycrystalline silicon disposed in a trench structure on the drain side of the device. | 2015-01-08 |
20150011059 | HIGH-K METAL GATE DEVICES WITH A DUAL WORK FUNCTION AND METHODS FOR MAKING THE SAME - A layer of P-metal material having a work function of about 4.3 or 4.4 eV or less is formed over a high-k dielectric layer. Portions of the N-metal layer are converted to P-metal materials by introducing additives such as O, C, N, Si or others to produce a P-metal material having an increased work function of about 4.7 or 4.8 eV or greater. A TaC film may be converted to a material of TaCO, TaCN, or TaCON using this technique. The layer of material including original N-metal portions and converted P-metal portions is then patterned using a single patterning operation to simultaneously form semiconductor devices from both the unconverted N-metal sections and converted P-metal sections. | 2015-01-08 |
20150011060 | DUAL EPI CMOS INTEGRATION FOR PLANAR SUBSTRATES - Silicon germanium regions are formed adjacent gates electrodes over both n-type and p-type regions in an integrated circuit. A hard mask patterned by lithography then protects structures over the p-type region while the silicon germanium is selectively removed from over the n-type region, even under remnants of the hard mask on sidewall spacers on the gate electrode. Silicon germanium carbon is epitaxially grown adjacent the gate electrode in place of the removed silicon germanium, and source/drain extension implants are performed prior to removal of the remaining hard mask over the p-type region structures. | 2015-01-08 |
20150011061 | COMPLEMENTARY STRESS MEMORIZATION TECHNIQUE LAYER METHOD - A process of forming a CMOS integrated circuit by forming a first stressor layer over two MOS transistors of opposite polarity, removing a portion of the first stressor layer from the first transistor, and forming a second stressor layer over the two transistors. A source/drain anneal is performed, crystallizing amorphous regions of silicon in the gates of the two transistors, and subsequently removing the stressor layers. A process of forming a CMOS integrated circuit by forming two transistors of opposite polarity, forming a two stressor layers over the transistors, annealing the integrated circuit, removing the stressor layers, and siliciding the transistors. A process of forming a CMOS integrated circuit with an NMOS transistor and a PMOS transistor using a stress memorization technique, by removing the stressor layers with wet etch processes. | 2015-01-08 |
20150011062 | THREE DIMENSIONAL FLOATING GATE NAND MEMORY - Memory arrays that include a first memory cell having a channel; a first insulator; a floating gate; a second insulator; and a control gate, wherein the first insulator is positioned between the channel and the floating gate, the second insulator is positioned between the floating gate and the control gate; and a second memory cell having a channel; a first insulator; a floating gate; a second insulator; and a control gate, wherein the first insulator is positioned between the channel and the floating gate, the second insulator is positioned between the floating gate and the control gate, wherein the first memory cell and the second memory cell are positioned parallel to each other. | 2015-01-08 |
20150011063 | METHODS OF FABRICATING SEMICONDUCTOR STRUCTURES - Semiconductor structures including an etch stop material between a substrate and a stack of alternating insulating materials and first conductive materials, wherein the etch stop material comprises an amorphous aluminum oxide on the substrate and a crystalline aluminum oxide on the amorphous aluminum oxide; a channel material extending through the stack; and a second conductive material between the channel material and at least one of the first conductive materials in the stack of alternating insulating materials and first conductive materials, wherein the second conductive material is not between the channel material and the etch stop material. Also disclosed are methods of fabricating such semiconductor structures. | 2015-01-08 |
20150011064 | VERTICAL NON-VOLATILE MEMORY DEVICE, METHOD OF FABRICATING THE SAME DEVICE, AND ELECTRIC-ELECTRONIC SYSTEM HAVING THE SAME DEVICE - Provided is a vertical non-volatile memory device having a metal source line. The vertical non-volatile memory device includes cell string units that are formed on first portions of a semiconductor substrate and are vertically arranged with respect to a surface of the semiconductor substrate, impurity regions formed on second portions of the semiconductor substrate between the cell string units, conductive lines formed on the impurity regions, and spacers that are formed on the sidewalls of the cell string units and insulate the conductive lines from the cells string units. | 2015-01-08 |
20150011065 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device including a drain region of a first conductivity type formed on a semiconductor substrate; an element forming region that is provided on the drain region and that has a concave portion reaching the drain region; a gate electrode disposed in the concave portion; a superjunction structure portion that is disposed in the element forming region and that is formed by alternately arranging a drift layer of the first conductivity type penetrated by the concave portion and a resurf layer of a second conductivity type being in contact with the drift layer on the semiconductor substrate; and a base region of the second conductivity type that is disposed on the superjunction structure portion so as to be in contact with the drift layer in the element forming region, that is penetrated by the concave portion, and that faces the gate electrode with the gate insulating film therebetween. | 2015-01-08 |
20150011066 | SEMICONDUCTOR DEVICE WITH VERTICAL GATE AND METHOD OF MANUFACTURING THE SAME - A gate electrode is formed in a trench reaching a drain region so as to leave a concave portion on the top of the trench. A first insulating film is formed, which fills the concave portion and of which the thickness increases as the distance from an end of the trench increases on the substrate surface on both sides of the trench. First and second source regions are formed in a self-alignment manner by introduction of impurities through the first insulating film. | 2015-01-08 |
20150011067 | FLATBAND SHIFT FOR IMPROVED TRANSISTOR PERFORMANCE - An integrated circuit includes MOS and DEMOS transistors with at least one of indium, carbon, nitrogen, and a halogen dopant raising the threshold voltage of a portion of the DEMOS transistor gate overlying the DEMOS transistor channel. An integrated circuit includes MOS and LDMOS transistors with at least one of indium, carbon, nitrogen, and a halogen dopant raising the threshold voltage of a portion of the LDMOS transistor gate overlying the DEMOS transistor channel. A method of forming an integrated circuit with MOS and DEMOS transistors with at least one of indium, carbon, nitrogen, and a halogen dopant raising the threshold voltage of a portion of the DEMOS transistor gate overlying the DEMOS transistor channel. A method of forming an integrated circuit with MOS and LDMOS transistors with at least one of indium, carbon, nitrogen, and a halogen dopant raising the threshold voltage of a portion of the LDMOS transistor gate overlying the DEMOS transistor channel. | 2015-01-08 |
20150011068 | FINFET Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure - The present disclosure provides a FinFET device. The FinFET device comprises a semiconductor substrate of a first semiconductor material; a fin structure of the first semiconductor material overlying the semiconductor substrate, wherein the fin structure has a top surface of a first crystal plane orientation; a diamond-like shape structure of a second semiconductor material disposed over the top surface of the fin structure, wherein the diamond-like shape structure has at least one surface of a second crystal plane orientation; a gate structure disposed over the diamond-like shape structure, wherein the gate structure separates a source region and a drain region; and a channel region defined in the diamond-like shape structure between the source and drain regions. | 2015-01-08 |
20150011069 | METHOD FOR MANUFACTURING P-TYPE MOSFET - A method for manufacturing a PMOSFET including defining an active region for the PMOSFET on a semiconductor substrate; forming an interfacial oxide layer on a surface of the substrate; forming a high-K gate dielectric layer on the interfacial oxide layer; forming a metal gate layer on the dielectric layer; implanting dopant ions into the metal gate layer; forming a Poly-Si layer on the metal gate layer; patterning the Poly-Si layer, the metal gate layer, the dielectric layer and the interfacial oxide layer to form a gate stack; forming a gate spacer surrounding the gate stack; and forming S/D regions. During annealing to form the S/D regions, dopant ions implanted in the metal gate layer may accumulate at upper and bottom interfaces of the dielectric, and electric dipoles with appropriate polarities are generated by interface reaction at the bottom interface, so that the metal gate has its effective work function adjusted. | 2015-01-08 |
20150011070 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A gate pattern is formed on a first region of a substrate. An epitaxial layer is formed on a second region of the substrate. A recess is formed in the second region of the substrate by etching the epitaxial layer and the substrate underneath. The first region is adjacent to the second region. | 2015-01-08 |
20150011071 | Diffusion Barrier Layer for Resistive Random Access Memory Cells - Provided are resistive random access memory (ReRAM) cells having diffusion barrier layers formed from various materials, such as beryllium oxide or titanium silicon nitrides. Resistive switching layers used in ReRAM cells often need to have at least one inert interface such that substantially no materials pass through this interface. The other (reactive) interface may be used to introduce and remove defects from the resistive switching layers causing the switching. While some electrode materials, such as platinum and doped polysilicon, may form inert interfaces, these materials are often difficult to integrate. To expand electrode material options, a diffusion barrier layer is disposed between an electrode and a resistive switching layer and forms the inert interface with the resistive switching layer. In some embodiments, tantalum nitride and titanium nitride may be used for electrodes separated by such diffusion barrier layers. | 2015-01-08 |
20150011072 | CAPPING COATING FOR 3D INTEGRATION APPLICATIONS - A structure for a semiconductor component is provided having a bi-layer capping coating integrated and built on supporting layer to be transferred. The bi-layer capping protects the layer to be transferred from possible degradation resulting from the attachment and removal processes of the carrier assembly used for layer transfer. A wafer-level layer transfer process using this structure is enabled to create three-dimensional integrated circuits. | 2015-01-08 |