02nd week of 2015 patent applcation highlights part 11 |
Patent application number | Title | Published |
20150008373 | REACTIVE MESOGEN FORMULATION WITH CONDUCTIVE ADDITIVE - The invention relates to a reactive mesogen (RM) formulation comprising a conductive additive, to a polymer film obtained thereof, and the use of the RM formulation and polymer film in optical or electrooptical components or devices, like optical retardation films for liquid crystal displays (LCDs). | 2015-01-08 |
20150008374 | ELECTRODE FOR LITHIUM SECONDARY BATTERY AND LITHIUM SECONDARY BATTERY COMPRISING THE SAME - An electrode for a lithium secondary battery including a silicon-based alloy having an expansion coefficient of 10% or greater and an electrochemically inactive whisker, and a lithium secondary battery using the electrode for a lithium secondary battery. | 2015-01-08 |
20150008375 | CONDUCTIVE WATER-BORNE COATINGS AND METHODS FOR ENHANCING COATING CONDUCTIVITY - The present disclosure is directed to conductive, translucent water-borne conductive coatings comprising a water-borne lubricant coating base material, an amount of PEDOT:PSS solution, and an amount of metal-containing nanowire, methods for making the same, and articles coated with such coatings. | 2015-01-08 |
20150008376 | Silver Ink Composition - A silver ink composition which includes a silver carboxylate having a group represented by a formula —COOAg, an aliphatic primary amine or secondary amine having 2 to 10 carbon atoms, an acetylene alcohol represented by a general formula (2) shown below, and a hydrocarbon having 6 to 20 carbon atoms, and has a viscosity at 27° C. of 40 mPa·s or less, | 2015-01-08 |
20150008377 | ELECTRICAL INSULATING OIL COMPOSITION HAVING EXCELLENT PROPERTIES IN WIDE TEMPERATURE RANGE - The present invention provides an electrical insulating oil composition that can maintain breakdown voltage at a high level in a wide temperature range of −50° C. to 30° C., extremely unlikely precipitates as crystals in particular at −50° C., and has excellent properties both at ordinary temperature and low temperature. The insulating oil composition comprises diarylalkanes having 14 carbon atoms (C14) and having 15 carbon atoms (C15), wherein the C14 diarylalkane is 1,1-diphenylethane or a mixture of 1,1-diphenylethane and benzyltoluene and the C15 diarylalkane is 1-phenyl-1-methylphenylethane. | 2015-01-08 |
20150008378 | COLORED GLASS PLATE AND METHOD FOR ITS PRODUCTION - To provide a colored glass plate which, despite the content of expensive cerium controlled to be low, simultaneously satisfies low solar transmittance, high visible light transmittance and low UV transmittance, while transmitted light has a green color tone. The colored glass plate comprises, as represented by mass percentage based on oxides, SiO | 2015-01-08 |
20150008379 | RESIN COMPOSITION AND METHOD FOR PRODUCING CIRCUIT BOARD - The present invention relates to a resin composition which includes a copolymer consisting of a first monomer containing a monomer unit having at least one carboxyl group and a second monomer copolymerizable with the first monomer, and also includes an ultraviolet absorber. The resin composition used is a resin composition for which, when ∈1 represents an absorbance coefficient per unit weight of a resin film | 2015-01-08 |
20150008380 | CLAW HAMMER WITH AN ANGLE-ADJUSTABLE CLAW - A claw hammer includes a handle having a handle head, a claw pivotally mounted at the handle head of the handle, and a hammer head mounted at the handle head and movable relative to the handle head between a locking position where the hammer head and the claw are engaged together to lock the claw to the handle head and an unlocking position where the hammer head and the claw are disengaged from each other for allowing the claw to be biased relative to the handle head to the desired operating angle. | 2015-01-08 |
20150008381 | ROPE WINCH - The present invention relates to a hoisting winch, in particular to a hoisting gear winch, having a hoisting drum whose winding region is bounded by two lateral flanged wheels, wherein at least one further flanged wheel is provided between the lateral flanged wheels for dividing the winding region into at least two part winding regions, wherein the cable can be guided beyond the named further flanged wheel into the at least two part winding regions. It is suggested in accordance with the invention to move the hoisting drum and/or a transverse cable guide arranged in front of the hoisting drum transversely to the longitudinal direction of the running in/running off cable approximately in the longitudinal direction of the drum and/or to adjust the angular position of the hoisting drum transversely to the longitudinal direction of the drum with respect to at least one transverse axis. | 2015-01-08 |
20150008382 | Motion Compensation System - A motion compensation system disposed on a structure of a drilling vessel. A stabilization assembly for use with the motion compensation system includes a first arm connectable to the structure, a first sheave connectable to the structure, a second arm connectable to the first arm, and a second sheave connectable to the second arm. At least one of the first arm and the first sheave are connectable to the structure at different locations and the first arm and the second sheave are connectable to the second arm at different locations. | 2015-01-08 |
20150008383 | Jack with Two Masts - A jack for lifting segments of a structure includes a pair of masts, a mast base, a mast cap, a hydraulic ram, a bottom bracket and a shuttle. The masts are identical and upright with a plurality of evenly spaced holes. The mast base supports the mast and the mast cap receives the upper ends of the masts and maintains the masts in a parallel, relationship. The hydraulic ram moves between a retracted position and an extended position with a stroke distance which is significantly less than the mast height. The bottom bracket is removably pinned to the masts and receives and supports the lower end of the hydraulic ram. The shuttle receives the upper end of the hydraulic ram. The bottom bracket and shuttle, when not pinned to the masts, can slide vertically up the masts. The shuttle includes features for connecting to a segment of a structure. | 2015-01-08 |
20150008384 | Apparatus for Alignment and Support of Fence Rails - A visualization, alignment and support tool permitting one person fence rail installation, and greatly speeding the installation when more than two persons are employed. Specifically, the tool temporarily affixes to a fence pipe and offers support for a length of fence rail; especially the ends of adjacent fence rails, so that the rails are supported and level relative to a fence pipe bracket which is fastened to the fence pipe. The rail ends can then be fastened with screws or other fasteners to the fence pipe bracket when desired without further adjustment required. | 2015-01-08 |
20150008385 | MEMORY DEVICE - According to one embodiment, a memory device includes a stacked film stacked in a superlattice structure. The stacked film includes a first layer, a second layer, and a third layer different in composition. The first layer is provided between the second layer and the third layer. The second layer includes a first atom reversibly moved by application of energy. The third layer includes a second atom reversibly moved by application of energy. The second atom is different from the first atom. | 2015-01-08 |
20150008386 | Morphology control of ultra-thin MeOx layer - A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and life and methods for forming the same. The nonvolatile memory device has a first layer on a substrate, a resistive switching layer on the first layer, and a second layer. The resistive switching layer is disposed between the first layer and the second layer and the resistive switching layer comprises a material having the same morphology as the top surface of the first layer. A method of forming a nonvolatile memory element in a ReRAM device includes forming a resistive switching layer on a first layer and forming a second layer, so that the resistive switching layer is disposed between the first layer and the second layer. The resistive switching layer comprises a material formed with the same morphology as the top surface of the first layer. | 2015-01-08 |
20150008387 | SELF-SELECTING PCM DEVICE NOT REQUIRING A DEDICATED SELECTOR TRANSISTOR - A Zinc Oxide (ZnO) layer deposited using Atomic Layer Deposition (ALD) over a phase-change material forms a self-selected storage device. The diode formed at the ZnO/GST interface shows both rectification and storage capabilities within the PCM architecture. | 2015-01-08 |
20150008388 | VARIABLE RESISTANCE MEMORY - A variable resistance memory according to the present embodiment includes a memory cell including an ion source electrode including metal atoms, an opposite electrode, an amorphous silicon film formed between the ion source electrode and the opposite electrode, and a polysilicon film formed between the amorphous silicon film and the ion source electrode. | 2015-01-08 |
20150008389 | MICRO DEVICE WITH STABILIZATION POST - A method and structure for stabilizing an array of micro devices is disclosed. A stabilization layer includes an array of stabilization cavities and array of stabilization posts. Each stabilization cavity includes sidewalls surrounding a stabilization post. The array of micro devices is on the array of stabilization posts. Each micro device in the array of micro devices includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface. | 2015-01-08 |
20150008390 | INTEGRATED OPTICAL UPCONVERSION DEVICES AND RELATED METHODS - Integrated upconversion devices capable of upconverting incident visible to short wavelength infrared photons to visible photons are disclosed. The device may include a quantum dot-based photodiode and a light-emitting diode. The device may further include a gain element such as a thin-film transistor. | 2015-01-08 |
20150008391 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - In general, according to one embodiment, a semiconductor light emitting element includes: a first semiconductor layer; a second semiconductor layer; a light emitting layer. The light emitting layer includes a well layer with a thickness of t1 (nanometers). The well layer includes In | 2015-01-08 |
20150008392 | ENHANCED LIGHT EXTRACTION - There is herein described light generating electronic components with improved light extraction and a method of manufacturing said electronic components. More particularly, there is described LEDs having improved light extraction and a method of manufacturing said LEDs. | 2015-01-08 |
20150008393 | NETWORK OF SEMICONDUCTOR STRUCTURES WITH FUSED INSULATOR COATING - Networks of semiconductor structures with fused insulator coatings and methods of fabricating networks of semiconductor structures with fused insulator coatings are described. In an example, a semiconductor structure includes an insulator network. A plurality of discrete semiconductor nanocrystals is disposed in the insulator network. Each of the plurality of discrete semiconductor nanocrystals is spaced apart from one another by the insulator network. | 2015-01-08 |
20150008394 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode (OLED) display includes a substrate, a thin film transistor formed on the substrate, a first electrode formed on the thin film transistor and electrically connected to the thin film transistor, a hole injection layer (HIL) formed on the first electrode, a hole transport layer (HTL) formed on the hole injection layer (HIL), an emission layer formed on the HTL, an electron transport layer (ETL) formed on the emission layer, a first buffer layer located on the ETL, and a second electrode formed on the first buffer layer. | 2015-01-08 |
20150008395 | ORGANIC LIGHT EMITTING DIODES DISPLAY - An organic light emitting diodes display includes: a switching thin film transistor and a driving thin film transistor connected to the switching thin film transistor, wherein the driving thin film transistor includes a driving semiconductor layer section, a first gate insulating layer covering the driving semiconductor layer section, a floating gate electrode disposed on the first gate insulating layer, a second gate insulating layer covering the floating gate electrode, and a driving gate electrode disposed on the second gate insulating layer and at a position corresponding to the floating gate electrode, wherein the second gate insulating layer has a permittivity in the range of about 10 to about 100. | 2015-01-08 |
20150008396 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF FORMING THE SAME - An organic light emitting diode display includes: a flexible substrate configured to be bent at least once; a first display part on the flexible substrate and including a plurality of first light emitting elements; and a second display part on the flexible substrate and including a plurality of second light emitting elements. Each of a first light emitting element and a second light emitting element among the plurality of first and second light emitting elements includes a first electrode, an emission layer and a second electrode, the first electrode of the first light emitting element includes a transparent layer or a semi-transparent layer, the first electrode of the second light emitting element includes a reflective layer, and the second electrode of the first light emitting element and the second light emitting element, includes the transparent layer or the semi-transparent layer. | 2015-01-08 |
20150008397 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode (OLED) display includes: a substrate; and a plurality of pixels positioned on the substrate. Each pixel includes a thin film transistor positioned on the substrate, an interlayer insulating layer and a light path control layer positioned on the thin film transistor, a first electrode positioned on the light path control layer and connected to the thin film transistor, an organic emission layer positioned on the first electrode, and a second electrode positioned on the organic emission layer, and the light path control layer includes a first control layer, a second control layer having a larger refractive index than the first control layer, and a middle layer having the same refractive index as the first control layer. | 2015-01-08 |
20150008398 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device includes a plurality of anodes and an auxiliary electrode disposed on the substrate. The auxiliary electrode is separated from the plurality of the anodes. The organic light-emitting display device further includes an organic layer disposed on the plurality of the anodes, an opening penetrating the organic layer to expose the auxiliary electrode, and a cathode disposed on the organic layer and the exposed auxiliary electrode. The cathode is electrically connected to the auxiliary electrode. The opening has a first width at a proximal end and a second width at a distal end. The distal end is closer to the auxiliary electrode than the proximal end. The first width is smaller than the second width, | 2015-01-08 |
20150008399 | ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting diode (OLED) display and method of manufacturing the same are disclosed. In one aspect, the OLED display includes a substrate which includes non-emission regions and emission regions, a first electrode which is formed on each of the emission regions of the substrate, an organic light-emitting layer which is formed on the first electrode, a second electrode which is formed on the organic light-emitting layer and the substrate and a passivation layer which is formed on the second electrode. The passivation layer includes a first passivation layer which substantially overlaps the organic light-emitting layer and a second passivation layer which does not overlap the organic light-emitting layer, wherein the refractive index of the first passivation layer is higher than the refractive index of the second passivation layer. | 2015-01-08 |
20150008400 | ORGANIC LIGHT EMITTING DISPLAY DEVICES AND METHODS OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICES - An inter-layer bridging connection is provided in an organic light emitting display and a method of manufacturing the same is provided. The organic light emitting display device is subdivided into a major interior, first region I, an auxiliary power coupling region II and a peripheral power line region III where the second region (II) extends at least partially around the first region, and the third region (III) extends at least partially around the second region. Additionally, the display device includes a substrate, a first electrode, a second electrode, an interposed light emitting structure, a power line, a conductive pattern and an auxiliary electrode. The first electrode and the light emitting structure are both disposed in the first region. The power line is disposed in the third region. The second electrode is at least partially transparent and is disposed in the first region and extends into the second region (II). The conductive pattern electrically connects the second electrode with the power line. The auxiliary electrode has reduced resistivity per unit area and directly contacts the second electrode. The auxiliary electrode is disposed in the second region. | 2015-01-08 |
20150008401 | ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME - Provided are an electronic device and a fabrication method thereof. The electronic device according to the concept of the present invention includes auxiliary interconnections disposed on a substrate, a light extraction layer that is provided on the substrate and fills between the auxiliary interconnection, and a first electrode provided on the auxiliary interconnections and the light extraction layer, wherein the light extraction layer may have a first surface facing the substrate and a second surface opposite to the first surface, the first surface may have protrusions, and the auxiliary interconnections may include a material having a lower resistance than the first electrode. Since electrical properties of the electronic device are improved, uniform light emission characteristics may be realized. | 2015-01-08 |
20150008402 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - A compound comprising a ligand L | 2015-01-08 |
20150008403 | LIGHT EMITTING APPARATUS - Provided is a light emitting apparatus including a substrate including a plurality of light emitting devices, wherein the substrate further includes a plurality of first members configured to diffuse light emitted from at least one of the light emitting devices, and a second member that is positioned between the first members, wherein the second member includes a light absorbing layer. | 2015-01-08 |
20150008404 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode (OLED) display includes a substrate, a thin film transistor disposed on the substrate, a first electrode disposed on the thin film transistor and electrically connected to the thin film transistor, a first auxiliary layer disposed on the first electrode, an emission layer disposed on the first auxiliary layer, an electron transport layer disposed on the emission layer, a first buffer layer disposed on the electron transport layer, and a second electrode disposed on the first buffer layer. | 2015-01-08 |
20150008405 | PIXEL AND ORGANIC LIGHT EMITTING DISPLAY USING THE SAME - A pixel and an organic light emitting display, the pixel including an organic light emitting diode, a first driver, and a second driver. The first driver controls whether current is supplied to the organic light emitting diode, according to a first data signal from a first data line. The second driver controls whether current is supplied to the organic light emitting diode, according to a second data signal from a second data line. | 2015-01-08 |
20150008406 | LIGHT-EMITTING ELEMENT DISPLAY DEVICE - A light-emitting element display device includes: a display area which has an organic insulating layer that is made of an organic insulating material; a peripheral circuit area which is disposed around the display area and which has the organic insulating layer; and a blocking area that is formed between the display area and the peripheral circuit area. The blocking area includes: a first blocking area configured by only one or a plurality of inorganic material layers between an insulating base substrate and an electrode layer which covers the display area and is formed continuously from the display area, and which configures one of two electrodes for allowing the light emitting area to emit the light; and a second blocking area including a plurality of layers configuring the first blocking area, and a light emitting organic layer. | 2015-01-08 |
20150008407 | ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE - An organic electroluminescence display device according to the invention includes a TFT substrate, a retroreflective body formed on the TFT substrate so as to correspond to each of pixels, a plurality of organic electroluminescence elements formed on the retroreflective bodies so as to correspond to the pixels, and a pixel separation film adapted to section the pixels, and the pixel separation film is formed in an area corresponding to an area between a boundary between the pixels adjacent to each other and an outer periphery of the retroreflective body. | 2015-01-08 |
20150008408 | ORGANIC LIGHT EMITTING DIODE AND ORGANIC LIGHT EMITTING DISPLAY APPARATUS HAVING THE SAME - An organic light emitting diode includes a hole injection layer, a hole transport layer, an optical compensation layer, an emission layer, an electron transport layer and an electron injection layer. The optical compensation layer is disposed on the hole transport layer and includes a phosphorescent host material. Thus, an electron barrier on an interface between the optical compensation layer and an emission layer may be reduced. Thus, the luminance efficiency in a low gray scale area may be decreased, and the stain and roll-off phenomenon in the low gray scale area may be improved. | 2015-01-08 |
20150008409 | ORGANIC LIGHT-EMITTING DEVICE, DISPLAY APPARATUS, IMAGE INFORMATION-PROCESSING APPARATUS, AND IMAGE-FORMING APPARATUS - Provided is an organic light-emitting device having high efficiency and capable of being driven at a low voltage. An organic light-emitting device includes an anode, a cathode, and an organic compound layer including at least an emission layer between the anode and the cathode. The organic light-emitting device includes, between the anode and the emission layer, a first layer including a first organic semiconductor material and a transition metal oxide, and a second layer in contact with the first layer at an interface on a side closer to the anode and including a second organic semiconductor material. The refractive index of the first organic semiconductor material is less than 1.6. The ionization potential of the first organic semiconductor material is equal to or larger than the ionization potential of the second organic semiconductor material. | 2015-01-08 |
20150008410 | ORGANIC LIGHT EMITTING DISPLAY AND FABRICATING METHOD THEREOF - A method of making a display device includes forming first electrodes of organic light emitting diodes in respective pixel areas on a substrate, forming a first common layer on the first electrodes in the pixel areas, forming emission layers in the pixel areas on the first common layer, forming a second electrode of the organic light emitting diodes on the emission layer, and applying physical pressure to divide the first common layer. | 2015-01-08 |
20150008411 | ORGANIC EL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Increase in resolution of an organic EL display panel is made achievable with a relatively simple process. An emissive layer of an OLED is formed by stacking an R emissive layer, a G emissive layer, and a B emissive layer corresponding to an R color, a G color, and a B color. The glass-transition temperatures T | 2015-01-08 |
20150008412 | BACK-EMITTING OLED DEVICE AND METHOD FOR HOMOGENIZING THE LUMINANCE OF A BACK-EMITTING OLED DEVICE - An OLED device includes a transparent anode, of sheet resistance R1, and a cathode, of sheet resistance R2, the ratio r=R2/R1 ranging from 0.01 to 2.5, a first anode electrical contact, a first cathode electrical contact, arranged above the active zone, and a reflector covering the active zone above an OLED system, and for each point B of the anode contact, the point B being in an edge of the first anodic region, on defining a distance D between B and the point C closest to the point B, and on defining a distance L between the point B and a point X of an opposite edge of the first anodic region from the first edge, and passing through Ci the following criteria are defined:
| 2015-01-08 |
20150008413 | BACK-EMITTING OLED DEVICE - An OLED device includes an anode, which is transparent, anode of a sheet resistance R1, a cathode of sheet resistance R2, the ratio r=R2/R1 ranging from 0.1 to 5, a first anode contact and a second anode contact, spaced from and facing the first anode contact, and a first cathode electrical contact, which is: arranged above the active zone, offset from the first anode contact and from the second anode contact, at every point of the contact surface. | 2015-01-08 |
20150008414 | EL DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF - EL display device with long lifetime for electrons being injected into a light-emission layer at a high rate, and method of manufacturing the EL display device are provided. The EL display device includes: base; pixel electrode on the base; auxiliary wiring on the base, the auxiliary wiring not overlapping with the pixel electrode; light-emission layer above the pixel electrode; charge transport layer above the auxiliary wiring and the pixel electrode, the charge transport layer continuously extending over the auxiliary wiring and the pixel electrode; and common electrode on the charge transport layer, the common electrode continuously extending over the auxiliary wiring and connected with the auxiliary wiring. The common electrode includes at least one metal selected from a group consisting of alkali metals and alkaline-earth metals. | 2015-01-08 |
20150008415 | OLED DEVICE AND MANUFACTURE THEREOF - A method of manufacturing an OLED device, a semi-finished product, and a OLED are described herein. In one embodiments, the method comprises providing an electrically conductive carrier substrate with a first carrier surface and a second carrier surface, assembling at least the first carrier surface a patterned layer of insulating material over an integral area, the layer of insulating material being patterned by a plurality of holes such that an electric access to the first carrier surface is possible, assembling a patterned conductive coating on the insulating material such that the conductive coating enters the holes and covers the insulating material, whereby the conductive coating is patterned such that a number of discrete first electrode areas are formed in the conductive coating, applying an organic light-emitting layer above at least one first electrode area, applying a second electrode layer above the organic light emitting layer. | 2015-01-08 |
20150008416 | SUBSTRATE WITH TRANSPARENT CONDUCTIVE LAYER AND ORGANIC ELECTROLUMINESCENCE DEVICE - A substrate with a transparent conductive layer | 2015-01-08 |
20150008417 | DISPLAY DEVICE - An EC region (second region) of an organic EL display device ( | 2015-01-08 |
20150008418 | ELECTRONIC DEVICE INSULATING LAYER, AND METHOD FOR PRODUCING ELECTRONIC DEVICE INSULATING LAYER - An object of the present invention is to provide an electronic device insulating layer which may improve characteristics of an electronic device. The means for solving the object is an electronic device insulating layer comprising a first insulating layer formed from a first insulating layer material and a second insulating layer formed on the first insulating layer from a second insulating layer material, the first insulating layer material being an insulating layer material comprising a photosensitive resin material (A), a tungsten (V) alkoxide (B) and a basic compound (C), the second insulating layer material being an insulating layer material comprising a polymer compound (D) which contains a repeating unit containing a cyclic ether structure and a repeating unit having an organic group capable of producing a phenolic hydroxyl group by the action of an acid. | 2015-01-08 |
20150008419 | MICROCAVITY OLED DEVICE WITH NARROW BAND PHOSPHORESCENT EMITTERS - A microcavity organic light emitting diode (OLED) device is disclosed having a narrow-band phosphorescent emitter. | 2015-01-08 |
20150008420 | THIN FILM TRANSISTOR WITH A CURRENT-INDUCED CHANNEL - A thin film transistor (TFT) includes a hole transport layer having a first side and a second side and an electron transport layer having a first side and a second side. The first side of the electron transport layer is directly interfaced to the second side of the hole transport layer. The electron transport layer includes a material having greater ionization potential and greater electron affinity than the hole transport layer, thereby forming a hole barrier and an electron barrier at the junction between the electron transport layer and the hole transport layer. A channel in the TFT is created by current injected into the electron transport layer from a gate electrode rather than by an electrostatic field generated by voltage applied to the gate electrode. The accumulated charge density in the channel of the TFT can be significantly larger than what can be generated through field effect principle, therefore a much lower gate voltage is needed than in a conventional TFT. | 2015-01-08 |
20150008421 | Lighting Device - To reduce the thickness of a lighting device which uses an electroluminescent material and to simplify the structure of a lighting device which uses an electroluminescent material, in the lighting device of the present invention: a terminal electrically connecting a light-emitting element included in the lighting device to the outside is formed over the same surface of a substrate as the light-emitting element; and the terminal is formed at the center of the substrate while the light-emitting element is stacked. In addition, the lighting device has a structure in which the light-emitting element is not easily deteriorated. | 2015-01-08 |
20150008422 | ORGANIC LIGHT EMITTING DEVICE - Provided are an organic light emitting device (OLED) and lighting. The illustrative OLED may minimize light absorption of a reflective electrode layer and evanescent coupling by surface plasmon, and exhibit excellent emitting efficiency. | 2015-01-08 |
20150008423 | BISCARBAZOLE DERIVATIVE, MATERIAL FOR ORGANIC ELECTROLUMINESCENCE DEVICE AND ORGANIC ELECTROLUMINESCENCE DEVICE USING THE SAME - A biscarbazole derivative of the invention is represented by a formula (1) below. | 2015-01-08 |
20150008424 | SUBSTRATE FOR ORGANIC ELECTRONIC DEVICE - Provided are a substrate for an organic electronic device, an organic electronic device and lighting. As a substrate for an OED such as an OLED, a substrate capable of providing an organic electronic system having excellent performance and reliability may be provided. | 2015-01-08 |
20150008425 | SUBSTRATE FOR ORGANIC ELECTRONIC DEVICE - Provided are a substrate for an organic electronic device (OED), an OED, and lighting. The substrate capable of forming an OED may have excellent performances including light extraction efficiency and prevent penetration of moisture or a gas from an external environment, and thus an OED having excellent performance and durability may be provided. | 2015-01-08 |
20150008426 | DISPLAY SUBSTRATE HAVING A THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - In a method for manufacturing a display substrate, a thin film transistor is formed on a base substrate. The thin film transistor includes a gate electrode, an active pattern, a source electrode and a drain electrode. A first passivation layer is formed to cover the thin film transistor. A second passivation layer is formed on the first passivation layer. A photoresist pattern is formed to partially expose the second passivation layer. The first passivation layer and the second passivation layer are partially removed to form a contact hole exposing the drain electrode. A pixel electrode layer is formed on the second passivation layer, the drain electrode and the photoresist pattern. A portion of the pixel electrode layer and the second photoresist pattern are removed to form a pixel electrode. The portion of the pixel electrode layer is disposed on a top surface and a sidewall of the photoresist pattern. | 2015-01-08 |
20150008427 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, DISPLAY UNIT, AND ELECTRONIC APPARATUS - A semiconductor device includes: a capacitor including a first insulating film between a lower electrode and an upper electrode; and a first laminated structure including a second insulating film and a semiconductor film, the second insulating film and the semiconductor film being located between part or all of a rim of the lower electrode and the first insulating film. | 2015-01-08 |
20150008428 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device in which the threshold is adjusted to an appropriate value is provided. The semiconductor device includes a semiconductor, a source or drain electrode electrically connected to the semiconductor, a first gate electrode and a second gate electrode between which the semiconductor is sandwiched, an electron trap layer between the first gate electrode and the semiconductor, and a gate insulating layer between the second gate electrode and the semiconductor. By keeping a potential of the first gate electrode higher than a potential of the source or drain electrode for 1 second or more while heating, electrons are trapped in the electron trap layer. Consequently, threshold is increased and Icut is reduced. | 2015-01-08 |
20150008429 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR SUBSTRATE MANUFACTURED BY THE METHOD - The present invention includes at least a step forming a source electrode ( | 2015-01-08 |
20150008430 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A base insulating film is formed over a substrate. A first oxide semiconductor film is formed over the base insulating film, and then first heat treatment is performed to form a second oxide semiconductor film. Then, selective etching is performed to form a third oxide semiconductor film. An insulating film is formed over the first insulating film and the third oxide semiconductor film. A surface of the insulating film is polished to expose a surface of the third oxide semiconductor film, so that a sidewall insulating film is formed in contact with at least a side surface of the third oxide semiconductor film. Then, a source electrode and a drain electrode are formed over the sidewall insulating film and the third oxide semiconductor film. A gate insulating film and a gate electrode are formed. | 2015-01-08 |
20150008431 | METHOD AND LAYOUT FOR DETECTING DIE CRACKS - A method of detecting a crack in a semiconductor die is provided. The method includes the following steps. A semiconductor die having an outer edge is provided, wherein a conductive feature is formed on semiconductor die along the outer edge. The conductive feature is biased, and a leakage current of the semiconductor die is measured, such that the crack propagating in the semiconductor the is detected. A semiconductor the with a layout for detecting a die crack and the method of manufacturing it are also provided. The semiconductor the includes a semiconductor the having an cuter edge, and a conductive feature on the semiconductor die along the outer edge. The conductive feature is configured to be biased by an external pin. | 2015-01-08 |
20150008432 | MOTHER SUBSTRATE FOR ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - A mother substrate for an organic light-emitting display apparatus. The mother substrate has a panel area and a peripheral area surrounding the panel area, pixels disposed in a display area of the panel area, pads that are disposed in a non-display area of the panel area and are coupled to the pixels, test wirings disposed in the peripheral area, a local buffer electrically connected to the test wirings, a bridge wiring connecting the local buffer to one of the pads, and a dummy resistance layer having one end in contact with the bridge wiring and another end in contact with one of the test wirings. | 2015-01-08 |
20150008433 | Compensated Photonic Device Structure And Fabrication Method Thereof - Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. In one aspect, a photonic device may include a substrate and a functional layer disposed on the substrate. The substrate may be made of a first material and the functional layer may be made of a second material that is different from the first material. The photonic device may also include a compensation region formed at an interface region between the substrate and the functional layer. The compensation region may be doped with compensation dopants such that a first carrier concentration around the interface region of function layer is reduced and a second carrier concentration in a bulk region of functional layer is reduced. | 2015-01-08 |
20150008434 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array panel includes a first insulating substrate, a gate electrode positioned on the first insulating substrate, a gate insulating layer positioned on the gate electrode, a semiconductor layer positioned on the gate insulating layer, and a source electrode and a drain electrode positioned on the semiconductor layer and spaced apart from each other, in which the semiconductor layer includes three or more amorphous silicon layers having different bandgap energies from one another in order to reduce a leakage current and improve performance of a liquid crystal display. | 2015-01-08 |
20150008435 | SENSOR AND METHOD FOR FABRICATING THE SAME - Embodiments of the invention disclose a sensor and its fabrication method, the sensor comprises: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a TFT device and a photodiode sensing device, wherein the TFT device is a bottom gate TFT; the photodiode sensing device comprises: a receiving electrode connected with a source electrode, a photodiode disposed on the receiving electrode, a transparent electrode disposed on the photodiode, and a bias line disposed on and connected with the transparent electrode, the bias line is disposed as parallel to the gate line. | 2015-01-08 |
20150008436 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a base substrate, a gate-line on the base substrate, a data-line crossing the gate-line, a pixel area defined on the base substrate, a gate-pad part connected to an end portion of the gate-line and including a gate corrosion member, and a data-pad part connected to an end portion of the data-line and including a data corrosion member. | 2015-01-08 |
20150008437 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the substrate and including at least a portion overlapping the gate electrode; a gate insulating layer disposed between the gate line and the semiconductor layer; and a source electrode and a drain electrode disposed on the substrate and facing each other over a channel region of the semiconductor layer. The gate insulating layer includes a first region and a second region, the first region corresponds to the channel region of the semiconductor layer, the first region is made of a first material, the second region is made of a second material, and the first material and the second material have different atomic number ratios of carbon and silicon. | 2015-01-08 |
20150008438 | DISPLAY DEVICE - There is provided a display device comprising a display panel, wherein the display panel comprises pixels, data lines, thin film transistors including first electrodes electrically connected with the data lines, second electrodes disposed to be spaced apart from the first electrodes in a first direction, semiconductor layers overlapping the first electrodes and the second electrodes, and gate electrodes overlapping the semiconductor layers and pads electrically connected with the second electrodes, wherein the thin film transistors includes first thin film transistors and second thin film transistors, which are alternately disposed, the semiconductor layers are divided into first semiconductor layers included in the first thin film transistors and second semiconductor layers included in the second thin film transistors, which are alternately disposed, and a length of the first semiconductor layer in the first direction is larger than a length of the second semiconductor layer in the first direction. | 2015-01-08 |
20150008439 | LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME - The light-emitting apparatus comprising thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer on the upper and side surfaces of the second organic insulation layer and having an opening over the anode, an organic compound layer in contact with the anode and the fourth inorganic insulation layer and containing light-emitting material, and a cathode in contact with the organic compound layer, wherein the third and the fourth inorganic insulation layers comprise silicon nitride or aluminum nitride. | 2015-01-08 |
20150008440 | Semiconductor Device and Method of Manufacturing the Same - An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability. The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15V/min, there is no wrap around on the electrode, and film peeling can be prevented. | 2015-01-08 |
20150008441 | SOLID STATE LIGHTING DEVICES WITH SELECTED THERMAL EXPANSION AND/OR SURFACE CHARACTERISTICS, AND ASSOCIATED METHODS - Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods are disclosed. A method in accordance with a particular embodiment includes forming an SSL (solid state lighting) formation structure having a formation structure coefficient of thermal expansion (CTE), selecting a first material of an interlayer structure to have a first material CTE greater than the substrate CTE, and selecting a second material of the interlayer structure based at least in part on the second material having a second material CTE less than the first material CTE. The method can further include forming the interlayer structure over the SSL formation structure by disposing (at least) a first layer of the first material over the SSL formation structure, a portion of the second material over the first material, and a second layer of the first material over the second material. The SSL formation structure supports an SSL emitter material, and the method further includes counteracting a force placed on the formation structure by the first material, by virtue of the difference between the second material CTE and the first material CTE. In other embodiments, the SSL formation structure can have an off-cut angle with a non-zero value of up to about 4.5 degrees. | 2015-01-08 |
20150008442 | ISOLATION STRUCTURE IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS - An integrated semiconductor device which includes a substrate layer, a buffer layer formed on the substrate layer, a gallium nitride layer formed on the buffer layer, and a barrier layer formed on the gallium nitride layer. Ohmic contacts for a plurality of transistor devices are formed on the barrier layer. Specifically, a plurality of first ohmic contacts for the first transistor device are formed on a first portion of the surface of the barrier layer, and a plurality of second ohmic contacts for the second transistor device are formed on a second portion of the surface of the barrier layer. In addition, one or more gate structures formed on a third portion of the surface of the barrier between the first and second transistor devices. Preferably, the one or more gate structures and the spaces between the gate structures and the source contacts of the transistor devices collectively form an isolation region that electrically isolates the first transistor device from the second transistor device. | 2015-01-08 |
20150008443 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor module including a high-side first transistor and a low-side second transistor, a first control board located above the semiconductor module, a drive element connected to a first gate terminal and a first source terminal of the first transistor on the first control board, and a drive element connected to a second gate terminal and a second source terminal of the second transistor on the first control board, a second control board located above the first control board, and photocouplers provided on the second control board. The semiconductor module includes a positive electrode terminal, a ground terminal, and an output terminal. The first gate terminal and the first source terminal are located at the side provided with the positive electrode terminal and the ground terminal. The second gate terminal and the second source terminal are located at the side provided with the output terminal. | 2015-01-08 |
20150008444 | Device Comprising a III-N Layer Stack With Improved Passivation Layer and Associated Manufacturing Method - A device comprising a III-N layer stack featuring a two-dimensional electron gas is disclosed, comprising: a III-N layer; a AI-III-N layer on top of the III-N layer; a passivation layer on top of said AI-III-N layer, the passivation layer comprising Silicon Nitride (SiN); wherein said passivation layer comprises a fully crystalline sub layer at the AI-III-N interface and at least part of the fully crystalline sub layer comprises Al and/or B; and associated methods for manufacturing the device. | 2015-01-08 |
20150008445 | III-Nitride Device and FET in a Package - One exemplary disclosed embodiment comprises a three-terminal stacked-die package including a field effect transistor (PET), such as a silicon PET, stacked atop a III-nitride transistor, such that a drain of the PET resides on and is electrically coupled to a source of the III-nitride transistor. A first terminal of the package is coupled to a gate of the FET, a second terminal of the package is coupled to a drain of the III-nitride transistor. A third terminal of the package is coupled to a source of the FET. In this manner, devices such as cascoded switches may be packaged in a stacked-die form, resulting in reduced parasitic inductance and resistance, improved thermal dissipation, smaller form factor, and lower manufacturing cost compared to conventional packages. | 2015-01-08 |
20150008446 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE - A method of manufacturing a semiconductor device is presented. The method includes providing a semiconductor layer comprising silicon carbide, wherein the semiconductor layer comprises a first region doped with a first dopant type. The method further includes implanting the semiconductor layer with a second dopant type using a single implantation mask and a substantially similar implantation dose to form a second region and a junction termination extension (JTE) in the semiconductor layer, wherein the implantation dose is in a range from about 2×10 | 2015-01-08 |
20150008447 | Silicon Carbide Device and a Method for Manufacturing A Silicon Carbide Device - A silicon carbide device includes an epitaxial silicon carbide layer having a first conductivity type and a buried lateral silicon carbide edge termination region within the epitaxial silicon carbide layer and having a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide surface layer including a doping of ions of a transition metal or including an increased density of intrinsic point defects in comparison to a density of intrinsic point defects of the buried lateral silicon carbide edge termination region. | 2015-01-08 |
20150008448 | METAL-OXIDE-SEMICONDUCTOR (MOS) DEVICES WITH INCREASED CHANNEL PERIPHERY AND METHODS OF MANUFACTURE - A semiconductor device includes a drift layer disposed on a substrate. The drift layer has a non-planar surface having a plurality of repeating features oriented parallel to a length of a channel of the semiconductor device. Further, each the repeating features have a dopant concentration higher than a remainder of the drift layer. | 2015-01-08 |
20150008449 | METAL-OXIDE-SEMICONDUCTOR (MOS) DEVICES WITH INCREASED CHANNEL PERIPHERY AND METHODS OF MANUFACTURE - A semiconductor device includes a silicon carbide (SiC) drift layer disposed on a (0001) oriented SiC substrate. The SiC drift layer has a non-planar surface including a plurality of repeating features that are oriented parallel to a length of a channel of the semiconductor device. Further, the channel region is disposed in a particular crystallographic plane of the SiC drift layer. | 2015-01-08 |
20150008450 | WIDE BAND GAP SEMICONDUCTOR DEVICE - The present invention includes a second source layer formed on a surface layer of a p base layer in the same step as that of forming a n | 2015-01-08 |
20150008451 | Formation Of Self-Aligned Source For Split-Gate Non-volatile Memory Cell - A memory device having a pair of conductive floating gates with inner sidewalls facing each other, and disposed over and insulated from a substrate of first conductivity type. A pair of spaced apart conductive control gates each disposed over and insulated from one of the floating gates, and each including inner sidewalls facing each other. A pair of first spacers of insulation material extending along control gate inner sidewalls and over the floating gates. The floating gate inner sidewalls are aligned with side surfaces of the first spacers. A pair of second spacers of insulation material each extend along one of the first spacers and along one of the floating gate inner sidewalls. A trench formed into the substrate having sidewalls aligned with side surfaces of the second spacers. Silicon carbon disposed in the trench. Material implanted into the silicon carbon forming a first region having a second conductivity type. | 2015-01-08 |
20150008452 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device comprises a substrate and first and second stress-generating epitaxial regions on the substrate and spaced apart from each other. A channel region is on the substrate and positioned between the first and second stress-generating epitaxial regions. A gate electrode is on the channel region. The channel region is an epitaxial layer, and the first and second stress-generating epitaxial regions impart a stress on the channel region. | 2015-01-08 |
20150008453 | SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME - A substrate capable of achieving a lowered probability of defects produced in a step of forming an epitaxial film or a semiconductor element, a semiconductor device including the substrate, and a method of manufacturing a semiconductor device are provided. A substrate is a substrate having a front surface and a back surface, in which at least a part of the front surface is composed of single crystal silicon carbide, the substrate having an average value of surface roughness Ra at the front surface not greater than 0.5 nm, a standard deviation σ of that surface roughness Ra not greater than 0.2 nm, an average value of surface roughness Ra at the back surface not smaller than 0.3 nm and not greater than 10 nm, standard deviation σ of that surface roughness Ra not greater than 3 nm, and a diameter D of the front surface not smaller than 110 mm. | 2015-01-08 |
20150008454 | SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME - A substrate capable of achieving a lowered probability of defects produced in a step of forming an epitaxial film or a semiconductor element, a semiconductor device including the substrate, and a method of manufacturing a semiconductor device are provided. A substrate is a substrate having a front surface and a back surface, in which at least a part of the front surface is composed of single crystal silicon carbide, the substrate having an average value of surface roughness Ra at the front surface not greater than 0.5 nm, a standard deviation σ of that surface roughness Ra not greater than 0.2 nm, an average value of surface roughness Ra at the back surface not smaller than 0.3 nm and not greater than 10 nm, standard deviation σ of that surface roughness Ra not greater than 3 nm, and a diameter D of the front surface not smaller than 110 mm. | 2015-01-08 |
20150008455 | MOLDED RESIN BODY FOR SURFACE-MOUNTED LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND SURFACE-MOUNTED LIGHT-EMITTING DEVICE - A molded resin body for surface-mounted light-emitting device has cured resin body integrally molded with a plurality of leads and a concave portion to which the plurality of leads are exposed at the bottom portion, in which the ten-point average roughness (Rz) of the opening surface of the concave portion is 1 μm to 10 μm, the glass transition temperature of the cured resin body is 10° C. or higher and the glass transition temperature is a value measured using a thermomechanical analyzer (TMS) under the conditions of a temperature range of −50 to 250° C., a temperature elevation rate of 5° C./min, and a sample size length of 1 to 5 mm, and the optical reflectance at 460 nm of the opening surface of the concave portion is 80% or more and the optical reflectance retention rate on the opening surface after heating the molded resin body at 180° C. for 72 hours is 90% or more. | 2015-01-08 |
20150008456 | METHOD FOR INSULATING NANOWIRES OR MIRCOWIRES - A method for producing a microelectronic device including a plurality of light emitting diodes each including a wire of nanometric or micrometric size, the method including: growing the nanowires from a growth substrate; forming at least one dielectric layer on a transfer substrate distinct from the growth substrate; and penetration by the nanowires in the dielectric layer. | 2015-01-08 |
20150008457 | FLIP-CHIP PHOSPHOR COATING METHOD AND DEVICES FABRICATED UTILIZING METHOD - Methods for fabricating light emitting diode (LED) chips one of which comprises flip-chip mounting a plurality of LEDs on a surface of a submount wafer and forming a coating over said LEDs. The coating comprising a conversion material at least partially covering the LEDs. The coating is planarized to the desired thickness with the coating being continuous and unobstructed on the top surface of the LEDs. The LEDs chips are then singulated from the submount wafer. An LED chip comprising a lateral geometry LED having first and second contacts, with the LED flip-chip mounted to a submount by a conductive bonding material. A phosphor loaded binder coats and at least partially covers the LED. The binder provides a substantially continuous and unobstructed coating over the LED. The phosphor within the coating absorbs and converts the wavelength of at least some of the LED light with the coating planarized to achieve the desired emission color point of the LED chip. | 2015-01-08 |
20150008458 | Light Emitting Device and Method of Manufacturing the Same - To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator ( | 2015-01-08 |
20150008459 | SINGULATON OF LIGHT EMITTING DEVICES BEFORE AND AFTER APPLICATION OF PHOSPHOR - A two-stage singulation process is used in the fabrication of phosphor coated light emitting elements. Prior to the application of the phosphor coating, the individual light emitting elements are singulated using a laser dicing process ( | 2015-01-08 |
20150008460 | STRESS RELIEF FOR ARRAY-BASED ELECTRONIC DEVICES - In accordance with certain embodiments, an electric device includes a flexible substrate having first and second conductive traces on a first surface thereof and separated by a gap therebetween, an electronic component spanning the gap, and a stiffener configured to substantially prevent flexing of the substrate proximate the gap during flexing of the substrate. | 2015-01-08 |
20150008461 | VERTICALLY STRUCTURED LED BY INTEGRATING NITRIDE SEMICONDUCTORS WITH Zn(Mg,Cd,Be)O(S,Se) AND METHOD FOR MAKING SAME - A light emitting diode (LED) with a vertical structure, including electrical contacts on opposing sides, provides increased brightness. In some embodiments an LED includes a nitride semiconductor light emitting component grown on a sapphire substrate, a Zn(Mg,Cd,Be)O(S,Se) assembly formed on the nitride semiconductor component, and a further Zn(Mg,Cd,Be)O(S,Se) assembly bonded on an opposing side of the light emitting component, which is exposed by removing the sapphire substrate. Electrical contacts may be connected to the Zn(Mg,Cd,Be)O(S,Se) assembly and the further Zn(Mg,Cd,Be)O(S,Se) assembly. Herein Zn(Mg,Cd,Be)O(S,Se) is a II-VI semiconductor satisfying a formula Zn | 2015-01-08 |
20150008462 | FLIP-CHIP LIGHT EMITTING DIODE PACKAGE MODULE AND MANUFACTURING METHOD THEREOF - The instant disclosure relates to a flip-chip LED package module and a method of manufacturing thereof. The method of manufacturing flip-chip LED package module comprises the following steps. A plurality of LEDs is disposed on a carrier. A packaging process is forming a plurality of transparent lens corresponding to LEDs and binding each other by a wing portion. A separating process is proceeding to form a plurality of flip-chip LED structures without the carrier. A bonding process is proceeding to attach at least one flip-chip LED structure on the circuit board. | 2015-01-08 |
20150008463 | FLUORIDE PHOSPHOR AND LIGHT EMITTING DEVICE USING THE SAME AND METHOD OF MANUFACTURING THE FLUORIDE PHOSPHOR - A fluoride phosphor activated with tetravalent Mn can absorb blue light and emit red light, and is represented by the general formula: K | 2015-01-08 |
20150008464 | LIGHT EMITTING DEVICE - A light emitting device comprising: a package having a recess; a light emitting element mounted in the recess of the package; a transmissive member provided above the light emitting element; a sealing resin that seals the recess of the package; a first fluorescent material contained in the transmissive member; and a second fluorescent material contained in the sealing resin and having a specific gravity different from that of the first fluorescent material, wherein a greater amount of the second fluorescent material is distributed to a side of the light emitting element than above the light emitting element, and a side surface of the light emitting element is exposed on the sealing resin. | 2015-01-08 |
20150008465 | REFLECTIVE ELECTRODE STRUCTURE, LIGHT EMITTING DEVICE AND PACKAGE - The present invention describes a buried reflective electrode with vias and mesh current spreader isolated by a reflective stack of dielectric layers (BREVMIRS). The BREVMIRS includes a reflective stack of dielectric layers, a conducting mesh, a transparent conducting layer and a first electrode layer with vias going through the stack of reflective dielectric layers, the conducting mesh and the transparent conducting layer. There is at least one via going through the conductive reflective mesh and transparent conducting electrode. The BREVMIRS may be integrated into semiconductor light emitting diode devices to improve the device efficiency and light output power. | 2015-01-08 |
20150008466 | WAVELENGTH CONVERTED LIGHT EMITTTING DEVICE - Embodiments of the invention include a semiconductor structure comprising a light emitting layer. The semiconductor structure is attached to a support such that the semiconductor structure and the support are mechanically self-supporting. A wavelength converting material extends over the sides of the semiconductor structure and the support, wherein the wavelength converting material has a substantially uniform thickness over the top and sides of the semiconductor structure and the support. | 2015-01-08 |
20150008467 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - There is provided a light-emitting device comprising a light-emitting element. The light-emitting device of the present invention comprises an electrode part for the light-emitting element; a reflective layer provided on the electrode part; and the light-emitting element provided on the reflective layer such that the light-emitting element is in contact with at least a part of the reflective layer, wherein the light-emitting element and the electrode part are in an electrical connection with each other by mutual surface contact via the at least a part of the reflective layer, wherein the electrode part serves as a supporting layer for supporting the light-emitting element, and wherein the electrode part extends toward the outside of the light-emitting element and beyond the light-emitting element. | 2015-01-08 |
20150008468 | LIGHT EMITTING DEVICES, SYSTEMS, AND METHODS OF MANUFACTURING - A light emitting device includes: a substrate; an n layer; an active light emitting region having a light emitting side; a p layer; a reflector opposite the light emitting side; and a plurality of microchannels configured to optically couple the active light emitting region with the reflector. | 2015-01-08 |
20150008469 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a light emitting unit, a first and second conductive pillar, a sealing unit, and a first and second terminal. The light emitting unit includes a first and second semiconductor layer and a light emitting layer. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The first conductive pillar is provided on the first semiconductor layer. The second conductive pillar is provided on the second semiconductor layer. The sealing unit covers side faces of each of the light emitting unit, the first conductive pillar, and the second conductive pillar. The first terminal is provided on the first conductive pillar and on the sealing unit. The second terminal is provided on the second conductive pillar and on the sealing unit. | 2015-01-08 |
20150008470 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a light emitting element, a phosphor layer, and a fluorescent reflection film. The phosphor layer has a transparent medium, a phosphor dispersed in the transparent medium, and a particle dispersed in the transparent medium. The phosphor is excited by the excitation light so as to emit a fluorescence. The particle is a magnitude of not more than 1/10 a wavelength of the excitation light. The particle has a different refractive index from a refractive index of the transparent medium. The fluorescent reflection film is provided between the light emitting element and the phosphor layer. The fluorescent reflection film has a higher reflectance with respect to a fluorescent wavelength of the phosphor, than a reflectance with respect to the wavelength of the excitation lights. | 2015-01-08 |
20150008471 | Contacting an Optoelectronic Semiconductor Component Through a Conversion Element and Corresponding Optoelectronic Semiconductor Component - A method for manufacturing an optoelectronic semiconductor component, comprising: providing a semiconductor chip in a composite wafer, comprising an active side for emitting a primary radiation and a contact terminal which is arranged on the active side; depositing a coupling element on the active side; attaching a luminescence conversion element, for converting part of the primary radiation into a secondary radiation, to the coupling element. | 2015-01-08 |
20150008472 | Light Emitting Diode - A light emitting diode including a substrate, a first type semiconductor layer, a luminous layer, a second type semiconductor layer, a first electrode, a transparent conductive layer, and a second electrode. The first type semiconductor layer is disposed on the substrate. The luminous layer is disposed on a portion of the first type semiconductor layer. The second type semiconductor layer is disposed on the luminous layer. The first electrode is disposed on a portion of the first type semiconductor layer not covered by the luminous layer. The transparent conductive layer disposed on the second type semiconductor layer has a plurality of through holes exposing the surface of the second type semiconductor layer. The second electrode is disposed on the transparent conductive layer. The distribution density D | 2015-01-08 |