01st week of 2016 patent applcation highlights part 60 |
Patent application number | Title | Published |
20160005911 | COMPOUND SEMICONDUCTOR PHOTOVOLTAIC CELL AND MANUFACTURING METHOD OF THE SAME - A compound semiconductor photovoltaic cell includes a compound semiconductor substrate; one or more first photoelectric conversion cells deposited on the compound semiconductor substrate; a bonding layer deposited on the one or more first photoelectric conversion cells; and one or more second photoelectric conversion cells bonded to the one or more first photoelectric conversion cells via the bonding layer, and disposed on a light incident side of the one or more first photoelectric conversion cells in a light incident direction. Further, band gaps of the first and the second photoelectric conversion cells decrease as the first and the second photoelectric conversion cells approach from the light incident side toward a back side in the light incident direction, and when there is one second photoelectric conversion cells, a band gap of the bonding layer is greater than or equal to a band gap of the second photoelectric conversion cell. | 2016-01-07 |
20160005912 | CIGS FILM PRODUCTION METHOD, AND CIGS SOLAR CELL PRODUCTION METHOD USING THE CIGS FILM PRODUCTION METHOD - The present invention provides a CIGS film production method which ensures that a CIGS film excellent in conversion efficiency can be produced at lower costs with higher reproducibility, and a CIGS solar cell production method using the CIGS film production method. The CIGS film production method includes: a stacking step of stacking an (A) layer containing indium, gallium and selenium and a (B) layer containing copper and selenium in this order in a solid phase over a substrate while heating at a temperature of higher than 250° C. and not higher than 400° C.; and a heating step of further heating the resulting stack of the (A) layer and the (B) layer to melt a compound of copper and selenium in the (B) layer into a liquid phase, whereby copper is diffused from the (B) layer into the (A) layer to cause crystal growth to provide a CIGS film. | 2016-01-07 |
20160005913 | SEMICONDUCTOR PHOTOMULTIPLIER AND A PROCESS OF MANUFACTURING A PHOTOMULTIPLIER MICROCELL - The present disclosure relates to a process of manufacturing a photomultiplier microcell. The process comprises providing an insulating layer over an active region; and implanting a dopant through the insulating layer to form a photosensitive diode in the active region. The insulating layer once formed is retained over the active region throughout the manufacturing process. | 2016-01-07 |
20160005914 | Method Of Forming An Interdigitated Back Contact Solar Cell - A method of forming an interdigitated back contact solar cell is described. The method uses a deposition process to create a doped glass layer on the substrate, which, when diffused, created either the emitter or back surface fields. The deposition process may also create an oxide layer on top of the doped glass layer. This oxide layer serves as a mask for a subsequent ion implant. This ion implant directs ions having the opposite conductivity of the doped glass layer into exposed regions of the substrate. A thermal process is used to diffuse the dopant from the doped glass layer into the substrate and repair any damage caused by the ion implant. | 2016-01-07 |
20160005915 | METHOD AND APPARATUS FOR INHIBITING LIGHT-INDUCED DEGRADATION OF PHOTOVOLTAIC DEVICE - A method for inhibiting light-induced degradation of a photovoltaic device includes steps of: a) subjecting the photovoltaic device to an illumination treatment using a light having a wavelength not less than 300 nm to heat the photovoltaic device in the absence of ambient light; and b) maintaining the temperature of the photovoltaic device above an annealing temperature of the photovoltaic device for at least 0.5 minute. An apparatus for inhibiting light-induced degradation of a photovoltaic device is also disclosed. | 2016-01-07 |
20160005916 | Method of Making Photovoltaic Devices - A method of making a photovoltaic device is presented. The method includes disposing a capping layer on a transparent conductive oxide layer, wherein the capping layer includes elemental magnesium, a magnesium alloy, a binary magnesium oxide, or combinations thereof. The method further includes disposing a window layer on the capping layer; and forming an interlayer between the transparent conductive oxide layer and the window layer, wherein the interlayer includes magnesium. | 2016-01-07 |
20160005917 | LIGHT EMITTING DEVICE - Embodiments provide a light emitting device including a substrate, a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, disposed on the substrate, a first electrode disposed on the first conductivity-type semiconductor layer, and a second electrode disposed on the second conductivity-type semiconductor layer. The first electrode includes an ohmic contact layer disposed on the first conductivity-type semiconductor layer and formed of a transparent conductive oxide and a reflective layer disposed on the ohmic contact layer, and the thickness of the ohmic contact layer is 1 nm or more and less than 60 nm. | 2016-01-07 |
20160005918 | METHOD FOR THE PRODUCTION OF MONOLITHIC WHITE DIODES - The invention relates to a method for the production of a light-emitting diode, characterised in that the method comprises a step of preparing a light-emitting layer ( | 2016-01-07 |
20160005919 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor deep ultraviolet light emitting device having a superior light emission efficiency is provided. A nitride semiconductor light emitting device having emission wavelength of 200 to 300 nm includes an n-type layer consisting of a single layer or a plurality of layers having different band gaps, a p-type layer consisting of a single layer or a plurality of layers having different band gaps, an active layer arranged between the n-type layer and the p-type layer, and an electron blocking layer having a band gap larger than any band gap of layers composing the active layer and the p-type layer. The p-type layer includes a first p-type layer having a band gap larger than a band gap of a first n-type layer which has a smallest band gap in the n-type layer. The electron blocking layer is arranged between the active layer and the first p-type layer. | 2016-01-07 |
20160005920 | LED Packages and Luminaires Incorporating Same - According to one aspect, an LED package comprises a plurality of LEDs and a primary optic disposed adjacent the LEDs wherein the primary optic includes protrusions for mixing light developed by the plurality of LEDs. | 2016-01-07 |
20160005921 | Bi-directional dual-color light emitting device and systems for use thereof - An LED optimized for use in low-cost gas or other non-solid substance detection systems, emitting two wavelengths (“colors”) of electromagnetic radiation from the same aperture is disclosed. The LED device emits a light with a wavelength centered on an absorption line of the target detection non-solid substance, and also emits a reference line with a wavelength that is not absorbed by a target non-solid substance, while both wavelengths are transmitted through the atmosphere with low loss. Since the absorption and reference wavelengths are emitted from the same exact aperture, both wavelengths can share the same optical path, reducing the size and cost of the detector while also reducing potential sources of error due to optical path variation. | 2016-01-07 |
20160005922 | LIGHT EMITTING COMPONENT - A light emitting component includes a light emitting unit, a phosphor layer and a distributed Bragg reflector layer. The phosphor layer is disposed on the light emitting unit and the distributed Bragg reflector layer is disposed above the phosphor layer. The distributed Bragg reflector layer is formed by at least two materials with different refractive indices. | 2016-01-07 |
20160005923 | LED ELEMENT AND MANUFACTURING METHOD FOR SAME - An LED element capable of further improving the light extraction efficiency and a manufacturing method for the same are provided. | 2016-01-07 |
20160005924 | Composite Substrates and Functional Device - In the case that a functional layer, made of a nitride of a group 13 element, is formed on a composite substrate including a sapphire body and a gallium nitride crystal layer disposed over the sapphire body, the deviation of the function is prevented. The composite substrate | 2016-01-07 |
20160005925 | VERTICAL TYPE LIGHT EMITTING DEVICE HAVING TRANSPARENT ELECTRODE AND METHOD OF MANUFACTURING THE SAME - Provided is a vertical type light emitting device and a method of manufacturing the same. A transparent electrode having high transmittance with respect to light in the entire range and constructed by using a resistance change material of which resistance state is to be changed from a high resistance state to a low resistance state if a voltage exceeding a threshold voltage inherent in a material is applied so that conducting filaments are formed is formed between an electrode pad and a semiconductor layer of a light emitting device. The transparent electrode has high transmittance with respect to the light in a UV wavelength range as well as in a visible wavelength range generated in the light emitting device. Since the conductivity of the transparent electrode is heightened due to the formation of the conducting filaments, the transparent electrode has good ohmic contact characteristic with respect to a semiconductor layer. | 2016-01-07 |
20160005926 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optoelectronic device, comprising: a first semiconductor layer comprising four boundaries, a corner formed by two of the neighboring boundaries, a first surface, and a second surface opposite to the first surface; a second semiconductor layer formed on the first surface of the first semiconductor layer; a second conductive type electrode formed on the second semiconductor layer; and two first conductive type electrodes formed on the first surface, wherein the first conductive type electrodes are separated and formed a pattern. | 2016-01-07 |
20160005927 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes a metal layer, a first semiconductor layer of a first conductivity type, a light emitting layer, a second semiconductor layer of a second conductivity type, a first electrode, a second electrode, and an insulating layer. The first semiconductor layer is separated from the metal layer in a first direction. The first semiconductor layer includes a first region, a second region, and a third region. The light emitting layer has a first side surface intersecting a second direction. The second semiconductor layer has a second side surface intersecting the second direction. The first electrode is electrically connected to the first region and the metal layer. The second electrode includes a first portion, and a second portion being continuous with the first portion. The insulating layer includes a first insulating portion and a second insulating portion. | 2016-01-07 |
20160005928 | LIGHT EMITTING ELEMENT - To provide a semiconductor light emitting element with high luminous efficiency, the light emitting element includes: a substrate; a semiconductor laminate placed above the substrate, the semiconductor laminate comprising a second semiconductor layer, an active layer and a first semiconductor layer laminated in this order from the substrate; and a first electrode and a second electrode placed between the substrate and the semiconductor laminate, wherein the semiconductor laminate is divided in a plurality of semiconductor blocks by a groove, wherein the first electrode includes protrusions that are provided in each of the plurality of semiconductor blocks and that penetrate the second semiconductor layer and the active layer to be connected to the first semiconductor layer, and wherein the second electrode is connected to the second semiconductor layer in each of the plurality of semiconductor blocks and has an external connector that is exposed on the bottom of the groove. | 2016-01-07 |
20160005929 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT UNIT, AND LIGHT-EMITTING ELEMENT PACKAGE - In a light-emitting element | 2016-01-07 |
20160005930 | OPTOELECTRONIC SEMICONDUCTOR CHIP ENCAPSULATED WITH AN ALD LAYER AND CORRESPONDING METHOD OF PRODUCTION - An optoelectronic semiconductor chip includes a semiconductor body including n-conducting and p-conducting regions, an active region generating electromagnetic radiation, a mirror layer reflecting the electromagnetic radiation, and an encapsulating layer sequence formed with an insulating material, wherein the mirror layer is arranged at an underside of the p-conducting region, the active region is arranged at a side of the p-conducting region facing away from the mirror layer, the n-conducting region is arranged at a side of the active region facing away from the p-conducting region, the encapsulation layer sequence covers the semiconductor body at the outer surface thereof in places, the encapsulation layer sequence extends at the outer surface of the semiconductor body from the active region along the p-conducting region as far as below the mirror layer, and the encapsulation layer sequence includes at least one encapsulation layer which is an ALD layer or consists of an ALD layer. | 2016-01-07 |
20160005931 | LIGHT EMITTING MODULE - Disclosed is a light-emitting module capable of not only improving appearance quality but also maximizing light efficiency. The disclosed light-emitting module comprises: a circuit board; a light-emitting diode chip which is flip-bonded on the circuit board; and a housing which is positioned on the circuit board and surrounds the light-emitting diode chip, wherein the housing has a recess and reflective part having a curvature structure formed on an inner wall of the recess. | 2016-01-07 |
20160005932 | COMPOSITIONS AND POLYMER COMPOSITES PREPARED FROM THE SAME - A composition including: a monomer mixture including a first monomer having at least two thiol groups at its terminal end and a second monomer having at least two carbon-carbon unsaturated bond-containing groups at its terminal end; and at least one additive selected from a zinc compound, an indium compound, ascorbic acid or a salt thereof, citric acid or a salt thereof, a tocopherol, and a tocotrienol. | 2016-01-07 |
20160005933 | LED STRUCTURE APPLIED TO BACKLIGHT SOURCE - An LED structure is applied to a backlight source to set a white light of a backlight module at a standard D65 position of the CIE1931 chromaticity coordinates and used together with a display module. A red phosphor for emitting a red light, a yellow phosphor for emitting a yellow light, and a blue light LED chip are provided. The mixing ratio of the red phosphor to the yellow phosphor is controlled within a range of (2.33−1):1, so that the original LED white light falls within a region enclosed by ccy≦1.8*ccx−0.12, ccy≧1.8*ccx−0.336, ccy≦0.33 and ccy≧0.15 of the CIE1931 coordinates. Since the red phosphor does not absorb or convert yellow light, the brightness loss of the yellow light that excites the yellow phosphor is minimized. A color filter may be installed to achieve better NTSC effect and luminous efficacy. | 2016-01-07 |
20160005934 | WHITE LIGHT EMITTING DIODE, MANUFACTURING METHOD AND PACKAGING MATERIAL THEREOF - A white light emitting diode comprising a substrate layer, two conductive frames, a light emitting unit, two conductive wires, and a packaging element is provided. The substrate layer is made from a curing reaction of first mixture, and the first mixture includes a curable resin, a curing agent, a phosphor material, and a modified thermal conductive nano-material, wherein the modified thermal conductive nano-material is made from a thermal conductive nano-material and a silane compound. The packaging element is made from a curing reaction of second mixture, and the second mixture includes a curable resin, a curing agent, a phosphor material, and a modified thermal conductive nano-material, wherein the modified thermal conductive nano-material is made from a thermal conductive nano-material and a silane compound. The chip-type white light emitting diode has a good heat-dissipating effect and a good luminous efficiency without additional heat dissipation fins. In addition, the manufacturing method of the chip-type white light emitting diode is a relatively simple process for mass production. | 2016-01-07 |
20160005935 | EPITAXY BASE AND LIGHT-EMITTING DEVICE - An epitaxy base adapted to form a light-emitting device thereon is provided. The epitaxy base includes a substrate and a patterned wavelength conversion structure disposed on a part of the substrate and protruding out from the substrate. A light-emitting device including the epitaxy base, a first type semiconductor layer, an emitting layer and a second type semiconductor layer is provided. The first type semiconductor layer is disposed on the substrate and the patterned wavelength conversion structure. The emitting layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the emitting layer. | 2016-01-07 |
20160005936 | Method for Producing an Optoelectronic Component - A method can be used for for producing an optoelectronic component. An optoelectronic semiconductor chip has a front face and a rear face. A sacrificial layer is applied to the rear face. A molded body is formed the optoelectronic semiconductor chip being at least partially embedded in the molded body. The sacrificial layer is removed. | 2016-01-07 |
20160005937 | Epoxy Resin Composition and Light-Emitting Apparatus Using the Same - An epoxy resin composition provided according to one embodiment of the present invention includes: a triazine derivative epoxy compound; a siloxane compound including a cycloaliphatic epoxy group and a siloxane group; and a curing agent, where the epoxy resin composition includes 10 to 70 parts by weight of the siloxane group with respect to 100 parts by weight of the siloxane compound, thereby providing a composition excellent in heat resistance, light resistance, and excess moisture tolerance, with good shear adhesion to silicone, and capable of semi-solidification. | 2016-01-07 |
20160005938 | LED LIGHTING MODULE - Disclosed is an LED lighting module ( | 2016-01-07 |
20160005939 | LIGHT EMITTING DIODE (LED) COMPONENTS INCLUDING CONTACT EXPANSION FRAME AND METHODS OF FABRICATING SAME - A Light Emitting Diode (LED) component includes an LED die and a contact expansion frame having an expanded anode contact and/or an expanded cathode contact. A patterned solder mask is provided on the contact expansion frame that exposes a portion of the outer face of the expanded anode contact and/or a portion of the outer face of the expanded cathode contact. A solder layer is provided on the portion of the outer face of the expanded anode contact and on the portion of the outer face of the expanded cathode contact. Multiple die components and related fabrication methods are also described. | 2016-01-07 |
20160005940 | DEVICE HAVING AT LEAST ONE OPTOELECTRONIC SEMICONDUCTOR COMPONENT - The invention relates to a device ( | 2016-01-07 |
20160005941 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a periphery surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; and a patterned metal layer formed on the plurality of vias and covered the periphery surface of the first semiconductor layer. | 2016-01-07 |
20160005942 | LIGHT EMITTING DEVICE HAVING DUAL SEALING RESINS - Provided is a light emitting device with improved light extracting efficiency and further higher heat releasing performance. A light emitting device includes a planar lead frame having a first lead and a second lead, and includes a light emitting element mounted on the first lead, a resin frame surrounding a periphery of the light emitting element, a first sealing resin filled in the inner side of the resin frame and sealing the light emitting element, and a second sealing resin covering the resin frame and the first sealing resin. Lower end of inner surface of the resin frame is arranged only on the first lead, and at an outside of the resin frame, and the second resin member covers at least a part of the first lead and the second lead. Of the back-surface of the first lead, a region directly under the blight emitting element is exposed. | 2016-01-07 |
20160005943 | STRUCTURE OF THERMOELECTRIC FILM - A structure of a thermoelectric film including a thermoelectric substrate and a pair of first diamond-like carbon (DLC) layers is provided. The first DLC layers are respectively located on two opposite surfaces of the thermoelectric substrate and have electrical conductivity. | 2016-01-07 |
20160005944 | Method for Preparing Electroconductive Polymer and Thermoelectric Device Comprising Electroconductive Polymer Film Prepared Using the Same - There are provided a method for producing an electroconductive polymer which can be operated at a low temperature such as the human body temperature, is safe to the human body, and is flexible and useful as a thermoelectric material, and a thermoelectric element including a thin film of an electroconductive polymer produced by the production method. | 2016-01-07 |
20160005945 | NATURAL HEAT ENERGY CONVERSION AND STORAGE DEVICE - A natural heat energy conversion and storage device includes: a heat energy transmission system, an energy conversion system, and an energy storage unit. The heat energy transmission system is used for performing large-scale collection of heat energy through an energy absorption and expansion unit, and transferring the heat energy to a heated end of a heat pipe, which can be superconducting. The heat pipe transfers the heat energy to an energy conversion unit where the heat energy can be converted into electric energy. The energy conversion unit is used for converting the heat energy collected by the heat energy transmission system into electric energy, and storing the generated electric energy into the energy storage unit. The number of modules of the energy conversion unit is at least one. The energy storage unit is used for storing the electric energy obtained through conversion by the energy conversion unit. | 2016-01-07 |
20160005946 | THERMOELECTRIC MODULE (VARIANTS) - The invention relates to thermoelectric devices and can be used in a variety of devices which utilize thermoelectric modules. A thermoelectric module containing n and p-type conductivity semiconducting branches, connected by means of switching buses into an electric circuit, and a protective polymer coating. The protective polymer coating is applied to the interconnected branches and buses, and the coating is an electrodepositable polymer varnish-paint composition modified with a fluoroelastomer latex. | 2016-01-07 |
20160005947 | THERMOELECTRIC CONVERSION MODULE - A thermoelectric conversion module has a substrate, a plurality of first electrodes, a plurality of thermoelectric conversion elements | 2016-01-07 |
20160005948 | THERMOELECTRIC GENERATION MODULE - A thermoelectric generation module having: a base material; a plurality of electrodes disposed on the base material; and a thermoelectric conversion layer that coats each of the electrodes individually leaving a portion of the electrode to which a wiring is to be connected, wherein the thermoelectric conversion layer adheres to the base material around the electrode excluding the portion of the electrode to which the wiring is to be connected. | 2016-01-07 |
20160005949 | DEVICES AND METHODS FOR CONTROLLlNG MAGNETIC ANISTROPY WITH LOCALIZED BIAXIAL STRAIN IN A PIEZOELECTRIC SUBSTRATE - Devices and methods for controlling magnetic anisotropy and orientation of magnetic single domain structures between stable states are provided based on piezoelectric thin films and patterned electrodes. By using patterned electrodes, piezoelectric strain is manipulated to achieve a highly localized biaxial strain in a piezoelectric substrate and rotate the magnetic anisotropy of magnetic materials. Reorientation of a magnetic single domain between different stable states is accomplished by pulsing voltage across pairs of electrodes. Since only a small region surrounding the electrodes is strained, the methods can be applied to arrays of indexed magnetic elements and to piezoelectric thin films clamped to silicon base substrates. | 2016-01-07 |
20160005950 | PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ACTUATOR DEVICE, LIQUID EJECTING HEAD, LIQUID EJECTING APPARATUS, AND ULTRASONIC MEASURING APPARATUS - Provided is a piezoelectric element in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, the piezoelectric layer being formed of composite oxide having a perovskite structure which contains at least Pb, Nb, and Ti, in which the piezoelectric layer has a tetragonal crystal structure, the crystal is oriented to {100} against the substrate, and regions are mixed in a crystal lattice, each region including a (100) plane and a (001) plane which are orthogonal to a stacking direction, and the composite oxide of the piezoelectric layer is represented by the following general expression. | 2016-01-07 |
20160005951 | PIEZOELECTRIC VIBRATOR - The invention relates to a piezoelectric vibrator having a piezoelectric laminate in which oriented film layers made of a polylactic acid and conductive layers are laminated alternately and grippers gripping both ends of the piezoelectric laminate, wherein one of two conductive layers neighboring via an oriented film layer is short-circuited to a negative electrode and the other conductive layer is short-circuited to a positive electrode, the oriented film layers interposed between the respective conductive layers are laminated such that the oriented film layers expand and contract in the same direction when a current is applied, the piezoelectric laminate has two parallel surfaces which are parallel to the plane direction of the oriented film layers and two end faces A and B which are between the parallel surfaces and parallel to each other, and the gripped ends respectively include the end face A and the end face B. | 2016-01-07 |
20160005952 | PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, AND ELECTRONIC DEVICE - There is provided a piezoelectric material not containing any lead component, having stable piezoelectric characteristics in an operating temperature range, a high mechanical quality factor, and satisfactory piezoelectric characteristics. The piezoelectric material according to the present invention includes a main component containing a perovskite-type metal oxide that can be expressed using the following general formula (1), and subcomponents containing Mn, Li, and Bi. When the metal oxide is 100 parts by weight, the content of Mn on a metal basis is not less than 0.04 parts by weight and is not greater than 0.36 parts by weight, content α of Li on a metal basis is equal to or less than 0.0012 parts by weight (including 0 parts by weight), and content β of Bi on a metal basis is not less than 0.042 parts by weight and is not greater than 0.850 parts by weight | 2016-01-07 |
20160005953 | ELECTRONIC DEVICE INCLUDING A SEMICONDUCTOR MEMORY - This technology provides an electronic device. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes a contact plug; a first stack structure disposed over the contact plug and coupled to the contact plug, wherein the first stack structure includes a pinning layer controlling a magnetization of a pinned layer; and a second stack structure disposed over the first stack structure and coupled to the first stack structure, wherein the second stack structure includes a MTJ (Magnetic Tunnel Junction) structure which includes the pinned layer having a pinned magnetization direction, a free layer having a variable magnetization direction, and a tunnel barrier layer interposed between the pinned layer and the free layer, wherein a width of the first stack structure is larger than a width of the contact plug and a width of the second stack structure. | 2016-01-07 |
20160005954 | METHOD FOR PROVIDING A PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC DEVICES USING A SACRIFICIAL INSERTION LAYER - A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. The method includes providing a free layer, a pinned layer and a nonmagnetic spacer layer between the free layer and the pinned layer. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the step of providing the free layer includes a first plurality of steps and the step of providing the pinned layer includes a second plurality of steps. The first and second plurality of steps include depositing a portion of a layer, depositing a sacrificial layer, annealing the portion of the magnetic junction under the sacrificial layer, and depositing a remaining portion of the layer. The layer may be the free layer, the pinned layer, or both. | 2016-01-07 |
20160005955 | SYNTHETIC ANTIFERROMAGNET (SAF) COUPLED FREE LAYER FOR PERPENDICULAR MAGNETIC TUNNEL JUNCTION (P-MTJ) - A magnetic tunnel junction (MTJ) device in a magnetoresistive random access memory (MRAM) and method of making the same are provided to achieve a high tunneling magnetoresistance (TMR), a high perpendicular magnetic anisotropy (PMA), good data retention, and a high level of thermal stability. The MTJ device includes a first free ferromagnetic layer, a synthetic antiferromagnetic (SAF) coupling layer, and a second free ferromagnetic layer, where the first and second free ferromagnetic layers have opposite magnetic moments. | 2016-01-07 |
20160005956 | METHOD AND SYSTEM FOR PROVIDING RARE EARTH MAGNETIC JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS - A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free and pinned layers each has a layer perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. At least one of the pinned layer and the free layer includes a multilayer. The multilayer includes at least one bilayer. Each of the bilayer(s) has a first layer and a second layer. The first layer includes an alloy of a magnetic transition metal and a rare earth. The second layer includes an amorphous magnetic layer. The multilayer has a nonzero perpendicular magnetic anisotropy up to at least four hundred degrees Celsius. | 2016-01-07 |
20160005957 | PROCESS FOR PRODUCING MAGNETORESISTIVE EFFECT ELEMENT AND DEVICE PRODUCING METHOD - A production process in which in an element isolation process for a magnetoresistive effect element, a re-deposited film adhered to a side wall of the element is efficiently removed by ion beam etching. Ion beam etching is performed while a substrate located being inclined relative to the grid is rotated. In the ion beam etching, an energy amount of an ion beam entering from a direction in which a pattern groove formed on the substrate extends is increased larger than the energy amount of the ion beam entering from another direction by controlling a rotation speed of the substrate, and the re-deposited film adhered to the side wall of the magnetoresistive effect element formed on the substrate is efficiently removed by etching. | 2016-01-07 |
20160005958 | METHOD FOR MANUFACTURING MAGNETORESISTIVE ELEMENT - Provided is a method for manufacturing a magnetoresistive element, including a step of forming a tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes a deposition step of depositing a metal film on top of a substrate, and an oxidation step of subjecting the metal film to an oxidation process. The oxidation step includes holding the substrate having Mg formed thereon, on a substrate holder in a processing container in which the oxidation process is performed, supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, at a temperature at which Mg does not sublime, and heating the substrate after the introduction of the oxygen gas. | 2016-01-07 |
20160005959 | METHOD OF FORMING A MAGNETIC TUNNEL JUNCTION STRUCTURE - In a particular embodiment, an apparatus is disclosed that includes a first electrode and a magnetic tunnel junction (MTJ) structure coupled to the first electrode. A second electrode is coupled to the MTJ structure, the second electrode having a first sidewall. A spacer layer is coupled to the first electrode, the first sidewall of the second electrode, and a sidewall of the MTJ structure. A third electrode is coupled to the second electrode, where the first sidewall of the second electrode contacts a bottom surface of the third electrode at a right angle. | 2016-01-07 |
20160005960 | FILM FORMATION METHOD AND NONVOLATILE MEMORY DEVICE - According to one embodiment, a film formation method can include irradiating a layer to be processed provided on an underlayer with an ionized gas cluster containing any one of oxygen and nitrogen to modify at least part of the layer. | 2016-01-07 |
20160005961 | SEMICONDUCTOR DEVICE AND DIELECTRIC FILM - A semiconductor device according to an embodiment includes a first conductive layer, a second conductive layer, and a ferroelectric film or a ferrielectric film provided between the first conductive layer and the second conductive layer, the ferroelectric film or the ferrielectric film including hafnium oxide containing at least one first element selected from Zn, Mg, Mn, Nb, Sc, Fe, Cr, Co, In, Li and N. | 2016-01-07 |
20160005962 | Memory Cells, Methods of Forming Memory Cells and Methods of Forming Memory Arrays - Some embodiments include memory cells which have multiple programmable material structures between a pair of electrodes. One of the programmable material structures has a first edge, and another of the programmable material structures has a second edge that contacts the first edge. Some embodiments include methods of forming an array of memory cells. First programmable material segments are formed over bottom electrodes. The first programmable material segments extend along a first axis. Lines of second programmable material are formed over the first programmable material segments, and are formed to extend along a second axis that intersects the first axis. The second programmable material lines have lower surfaces that contact upper surfaces of the first programmable material segments. Top electrode lines are formed over the second programmable material lines. | 2016-01-07 |
20160005963 | ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - An electronic device includes a semiconductor memory that includes: an inter-layer dielectric layer including a hole over a substrate; a first nitride layer disposed on sidewalls of the hole; a selector disposed in a bottom portion of the hole and over the first nitride layer on the sidewalls of the hole; a stacked structure including a variable resistance pattern disposed over a lower structure including the selector; and a second nitride layer disposed in an upper portion and on sidewalls of the stacked structure. | 2016-01-07 |
20160005964 | SILICON BASED NANOSCALE CROSSBAR MEMORY - The present application describes a crossbar memory array. The memory array includes a first array of parallel nanowires of a first material and a second array of parallel nanowires of a second material. The first and the second array are oriented at an angle with each other. The array further includes a plurality of nanostructures of non-crystalline silicon disposed between a nanowire of the first material and a nanowire of the second material at each intersection of the two arrays. The nanostructures form a resistive memory cell together with the nanowires of the first and second materials. | 2016-01-07 |
20160005965 | MEMORY CELLS HAVING A FIRST SELECTING CHALCOGENIDE MATERIAL AND A SECOND SELECTING CHALCOGENIDE MATERIAL AND METHODS THEROF - The present disclosure includes memory cells and methods of forming the same. The memory cells disclosed herein can include a first selecting chalcogenide material, a second selecting chalcogenide material, and a storage material. | 2016-01-07 |
20160005966 | Methods of Forming Structures - Some embodiments include methods of forming structures. Spaced-apart features are formed which contain temperature-sensitive material. Liners are formed along sidewalls of the features under conditions which do not expose the temperature-sensitive material to a temperature exceeding 300° C. The liners extend along the temperature-sensitive material and narrow gaps between the spaced-apart features. The narrowed gaps are filled with flowable material which is cured under conditions that do not expose the temperature-sensitive material to a temperature exceeding 300° C. In some embodiments, the features contain memory cell regions over select device regions. The memory cell regions include first chalcogenide and the select device regions include second chalcogenide. The liners extend along and directly against the first and second chalcogenides. | 2016-01-07 |
20160005967 | APPARATUSES INCLUDING ELECTRODES HAVING A CONDUCTIVE BARRIER MATERIAL AND METHODS OF FORMING SAME - Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions. | 2016-01-07 |
20160005968 | Memory Structures and Arrays, and Methods of Forming Memory Structures and Arrays - Some embodiments include memory structures having a diode over a memory cell. The memory cell can include programmable material between a pair of electrodes, with the programmable material containing a multivalent metal oxide directly against a high-k dielectric. The diode can include a first diode electrode directly over one of the memory cell electrodes and electrically coupled with the memory cell electrode, and can include a second diode electrode laterally outward of the first diode electrode and not directly over the memory cell. Some embodiments include memory arrays comprising the memory structures, and some embodiments include methods of making the memory structures. | 2016-01-07 |
20160005969 | SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME - Disclosed are a semiconductor storage device and a method for manufacturing the semiconductor storage device, whereby the bit cost of memory using a variable resistance material is reduced. The semiconductor storage device has: a substrate; a first word line ( | 2016-01-07 |
20160005970 | MASK FRAME ASSEMBLY FOR THIN FILM DEPOSITION - Provided is a mask frame assembly for thin film deposition. The mask frame assembly includes a mask frame having an opening surrounded by the mask frame; and a support extending across the opening to support a mask on the mask frame. The support includes a support body, a plurality of ribs in the support body, and one or more patterned portions in spaces between the plurality of ribs, the one or more patterned portions having a different thickness than the ribs. | 2016-01-07 |
20160005971 | ORGANIC ELECTROLUMINESCENT DEVICE AND MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS - The invention provides an organic electroluminescent device and a manufacturing method thereof, and a display apparatus. The method for manufacturing the organic electroluminescent device of the invention includes using the following to form at least one function layer: preparing a solution of a material of the function layer, and forming a liquid material layer for the function layer using the solution of the material of the function layer; performing a vacuum drying on the liquid material layer for the function layer to form function layer. In the invention, a relatively dense film is formed by performing a vacuum drying on the function layer, and the residual organic solvent is effectively removed to avoid the formation of defects, so that the film becomes smooth and dense, which increases the carrier mobility in the film and is advantageous to the transport and recombination of electrons and holes. | 2016-01-07 |
20160005972 | CHARGE-TRANSPORTING VARNISH - Provided is a charge-transporting varnish which includes a charge-transporting material including fluorine atoms, a charge-transporting material not including fluorine atoms, a dopant material comprising heteropoly acid, and an organic solvent, said charge-transporting material including fluorine atoms being a polymer of weight-average 1,000 to 200,000 molecular weight obtained by condensing a triarylamine compound, an aryl aldehyde compound including fluorine atoms, and a fluorine derivative having a carbonyl group, and said charge-transporting material not including fluorine atoms being an oligoaniline compound. The charge-transporting varnish provides a thin film which, even in a case of being used as a single layer in contact with and in between an anode and a luminescent layer, is capable of achieving an organic EL element having superior luminance characteristics and durability. | 2016-01-07 |
20160005973 | TRANSPARENT RESIN COMPOSITION FOR ORGANIC ELECTROLUMINESCENT ELEMENT SEALING, RESIN SHEET FOR ORGANIC ELECTROLUMINESCENT ELEMENT SEALING, AND IMAGE DIPLAY DEVICE - A transparent resin composition for organic EL element sealing and other things having a sufficient moisture blocking effect and excellent flexibility is provided. A thermoplastic resin, a tackifying resin, and an organometallic compound having at least an ester bond and represented by the following formula are included, and in which the light transmittance for light is 85% or higher, the relationship: AM/Y<162 is satisfied, and the thermoplastic resin includes a hydride of a styrene-based A-B-A type triblock body. | 2016-01-07 |
20160005974 | ELECTRONIC DEVICE USING ORGANIC THIN FILM, AND ELECTRONIC APPARATUS CONTAINING THE SAME - The present invention provides a high-performance, highly homogeneous, highly stable electronic device by forming an extremely uniform interface between an insulator and an organic semiconductor, as well as an electronic apparatus using the same. The present invention relates to an electronic device which contains, as a component, an organic thin film in which a geometric two-dimensional arrangement is formed regularly by interdigitating skeletal structures of a positive three-pronged shape of triptycene and by adding a first molecule extending out of one plane of a two-dimensional molecular structure of the triptycene skeletal structure. The invention also relates to an electronic apparatus and the like which contains the electronic device in the interior of the electronic apparatus. | 2016-01-07 |
20160005975 | CHARGE-TRANSPORTING VARNISH - A charge-transporting varnish including charge-transporting material comprising N,N′-diaryl benzidine derivatives represented by formula (1), a charge-accepting dopant comprising heteropoly acid, and an organic solvent. | 2016-01-07 |
20160005976 | AROMATIC AMINE DERIVATIVE, AND ORGANIC ELECTROLUMINESCENT ELEMENT COMPRISING THE SAME - An aromatic amine derivative represented by the following formula (1) | 2016-01-07 |
20160005977 | HETEROCYCLIC COMPOUND, MATERIAL FOR ORGANIC ELECTROLUMINESCENT ELEMENTS USING SAME, ORGANIC ELECTROLUMINESCENT ELEMENT USING SAME, AND ELECTRONIC DEVICE - A heterocyclic compound in which three 5-membered rings are fused to a benzene ring and a saturated or unsaturated ring is further fused to each of the 5-membered rings is a novel material, which is useful as a material for organic electroluminescence devices for the production of organic electroluminescence devices and electronic equipment. | 2016-01-07 |
20160005978 | COMPOUND, LIGHT EMITTER, AND ORGANIC LIGHT EMITTING DEVICE - A compound represented by D-A-D is useful as a light emitter for an organic electroluminescent device: | 2016-01-07 |
20160005979 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes at least one first material and at least one second material, the first material being represented by one of Formulae 1-1 and 1-2, below, and the second material being represented by Formula 2, below: | 2016-01-07 |
20160005980 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes at least one first material and at least one second material, the first material being represented by Formula 1 and the second material being represented by Formula 2: | 2016-01-07 |
20160005981 | COMPOUND FOR ORGANIC ELECTRONIC ELEMENT, ORGANIC ELECTRONIC ELEMENT USING THE SAME, AND ELECTRONIC DEVICE THEREOF - The present invention provides a novel compound which is capable of improving light-emitting efficiency, stability and lifespan of an element, an organic electronic element using the same, and an electronic device thereof. | 2016-01-07 |
20160005982 | NOVEL NAPHTHOTRIAZOLE DERIVATIVES AND ORGANIC ELECTROLUMINESCENCE DEVICES - Naphthotriazole derivatives represented by the following general formula (1), | 2016-01-07 |
20160005983 | ORGANIC PHOTOSENSITIVE DEVICES COMPRISING ARYL SQUARAINES AND METHODS OF MAKING THE SAME - There is disclosed squaraine compounds of formula I: | 2016-01-07 |
20160005984 | CONDENSED CYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A condensed cyclic compound is represented by Formula 1: | 2016-01-07 |
20160005985 | ORGANIC SEMICONDUCTOR THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - A substrate having a thin film transistor includes a buffer layer on a substrate, source and drain electrodes on the buffer layer, a portion of the buffer layer exposed between the source and drain electrodes, a small organic semiconductor layer on the source electrode and the drain electrode, the organic semiconductor layer contacting the exposed portion of the buffer layer, a gate insulating layer on the organic semiconductor layer, the gate insulating layer having substantially the same size as the organic semiconductor layer, a gate electrode on the gate insulating layer, a passivation layer over the surface of the substrate including the gate electrode; and a pixel electrode on the passivation layer, the pixel electrode electrically connected to the drain electrode. | 2016-01-07 |
20160005986 | SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - A solar cell is provided, and has an organic light-absorbing layer having a perovskite structure, and a hole transport layer disposed on a first surface of the organic light-absorbing layer. The hole transport layer is made of a nickel oxide. A method of manufacturing a solar cell is provided, and has the steps of (1) providing a hole transport layer which is made of a nickel oxide; (2) forming an organic light-absorbing layer having a perovskite structure, which has a first surface on which the hole transporting layer is disposed, and a second surface opposite to the first surface; and (3) forming an electron transport layer on the second surface of the organic light-absorbing layer. | 2016-01-07 |
20160005987 | Planar Structure Solar Cell with Inorganic Hole Transporting Material - A method is provided for forming a planar structure solar cell. Generally, the method forms a transparent conductive electrode, with a planar layer of a first metal oxide adjacent to the transparent conductive electrode. For example, the first metal oxide may be an n-type metal oxide. A semiconductor absorber layer is formed adjacent to the first metal oxide, comprising organic and inorganic materials. A p-type semiconductor hole-transport material (HTM) layer is formed adjacent to the semiconductor absorber layer, and a metal electrode is formed. adjacent to the HTM layer. In one aspect, the HTM layer is an inorganic material such as a p-type metal oxide. Some explicit examples of HTM materials include stoichiometric and non-stoichiometric molybdenum (VI) oxide, stoichiometric and non-stoichiometric vanadium (V) oxide, stoichiometric and non-stoichiometric nickel (II) oxide, and stoichiometric and non-stoichiometric copper (I) oxide. Also provide are planar solar cell devices. | 2016-01-07 |
20160005988 | CONDUCTIVE THIN FILM, METHOD FOR PRODUCING SAME, AND ELECTRONIC ELEMENT COMPRISING SAME - Provided are a conductive thin film, a method for producing same, and an electronic element comprising same. The conductive thin film has excellent conductivity, allows the easy adjustment of a work function, also allows easy film formation, and thus can be advantageously used in various electronic elements, such as organic light-emitting devices and organic solar cells. | 2016-01-07 |
20160005989 | LIGHT-EMITTING COMPOSITE FILM, ITS MANUFACTURE METHOD, AND WHITE LIGHT ORGANIC ELECTROLUMINESCENT DEVICE - Disclosed are a light-emitting composite film, its manufacture method, and a white light organic electroluminescent device. Said light-emitting composite film comprises a first light-emitting layer and a second light-emitting layer. The first light-emitting layer comprises polyfluorene or polyfluorene derivatives, and the second light-emitting layer comprises quantum dots. A variety of color gamut and an improved brightness of devices can be achieved by the light-emitting composite film. | 2016-01-07 |
20160005990 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device comprises a first electrode, a second electrode, and an organic light-emitting layer disposed between the first electrode and the second electrode, and comprising at least a host material, a first dopant for emitting light of a first color and a second dopant for emitting light of a second color, which is different from the first color. The organic light-emitting layer is divided into a first region adjacent to the first electrode, a second region adjacent to the second electrode, and a third region between the first region and the second region. Only the second dopant is provided in at least one of the first region and the second region. | 2016-01-07 |
20160005991 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device comprises a first electrode, a second electrode disposed on the first electrode, a first organic light-emitting layer disposed between the first electrode and the second electrode, a second organic light-emitting layer disposed between the first organic light-emitting layer and the second electrode, a first charge generation layer(CGL) disposed between the first organic light-emitting layer and the second organic light-emitting layer, a second CGL disposed between the first CGL and the second organic light-emitting layer, and a first buffer layer disposed between the first CGL and the second CGL and including fullerene. | 2016-01-07 |
20160005992 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting diode display device according to an embodiment includes: a first substrate having a pixel region; a first electrode in the pixel region on the first substrate; an emitting layer on the first electrode; and a second electrode on the emitting layer, the second electrode including a metal layer having a thickness smaller than about 300 Å. | 2016-01-07 |
20160005993 | ORGANIC LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is an organic light emitting device (OLED) that may include a first electrode including at least two conductive units, each of the at least two conductive units connected to a conductive connector of the first electrode; a second electrode facing the first electrode; a current carrying electrode electrically connected to the at least two conductive units, wherein the current carrying electrode includes a current carrying portion of the first electrode connected to the conductive connector of each of the at least two conductive units or an auxiliary electrode formed of a material different from that of the first electrode; and an organic layer between the first electrode and the second electrode; wherein the conductive connector includes an area in which a length of a direction, in which a current substantially flows, is at least ten times longer than a width of a direction vertical to the length of the direction, and wherein a resistance of the conductive connector is 400 Ω or more and 300,000 Ω or less. | 2016-01-07 |
20160005994 | ORGANIC ELECTROLUMINESCENCE DEVICE - The present invention aims to provide an organic electroluminescence device that operates successfully without strict sealing. Provided is an organic electroluminescence device having a structure in which a plurality of layers is stacked between an anode and a cathode formed on a substrate, wherein the organic electroluminescence device is sealed to provide a water vapor transmission rate of 10 | 2016-01-07 |
20160005995 | THERMOSETTING COMPOSITION FOR ORGANIC LIGHT-EMITTING ELEMENT FILLER AND ORGANIC LIGHT-EMITTING ELEMENT DISPLAY DEVICE COMPRISING SAME - The present invention relates to a thermosetting composition for an organic light-emitting element filler, which comprises (A) 100 parts by weight of an epoxy-based resin including (A1) an epoxy resin having a weight average molecular weight of around about 200 g/mol or more to less than about 1000 g/mol, (A2) an epoxy resin having a weight average molecular weight of around about 1000 g/mol or more to less than about 20000 g/mol and (A3) an epoxy resin having a weight average molecular weight of about 20000 g/mol or more to less than about 100000 g/mol, (B) about 10 parts by weight to about 40 parts by weight of a sheet-like filler and (C) about 0.1 parts by weight to about 20 parts by weight of an imidazole curing agent having a cyano group; and an organic light-emitting element display device comprising the same. | 2016-01-07 |
20160005996 | DISPLAY APPARATUS AND THE SEALING METHOD THEREOF - This disclosure provides a display apparatus and the sealing method thereof. The display apparatus includes: a substrate having a displaying region and a non-displaying region surrounding the displaying region; and a frit disposed on the non-displaying region to form a closed loop which surrounds the displaying region and has both a start portion and an end portion not overlapping each other; wherein a first light beam is applied to the frit to sinter it along the loop in a first direction, and a second light beam is applied to the frit to sinter it along the loop in a second direction, starting at the start portion and ending up at the end portion; wherein, the second direction is different from the first direction. | 2016-01-07 |
20160005997 | ORGANIC ELECTROLUMINESCENT ELEMENT AND METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENT ELEMENT - This organic electroluminescent element is provided with the following: a barrier layer that is provided on a flexible substrate and comprises a modified-polysilazane layer; a laminate that is laid out on top of the barrier layer and is provided with an organic functional layer that has at least one light-emitting layer between a pair of electrodes; a covering intermediate layer formed on top of the barrier layer at least at the periphery of the laminate; and a sealing member joined to the top of the covering intermediate layer with a sealing resin layer interposed therebetween. | 2016-01-07 |
20160005998 | AFLUORINE-CONTAINING POLYMERIZED HMDSO APPLICATIONS FOR OLED THIN FILM ENCAPSULATION - Methods for forming an OLED device are described. An encapsulation structure having organic buffer layer and an interface layer disposed on the organic buffer layer sandwiched between barrier layers is deposited over an OLED structure. In one example, the method includes depositing a first barrier layer on a region of a substrate having an OLED structure disposed thereon, depositing a buffer layer with a fluorine-containing plasma formed from a first gas mixture containing a polymer gas precursor and a fluorine containing gas on the first barrier layer, depositing an interface layer on the buffer layer with a second gas mixture containing the polymer gas precursor, and depositing a second barrier layer on the interface layer. | 2016-01-07 |
20160005999 | Adhesive Film for Organic Electronic Device and Encapsulant Comprising the Same - Disclosed are an adhesive film for an organic electronic device and an encapsulant including the same, wherein the adhesive film can function to remove or block defect causes such as moisture and impurities so that the defect causes do not approach the organic electronic device, and also to minimize problems due to separation of the organic electronic device and the film and/or interfacial film delamination upon moisture removal. | 2016-01-07 |
20160006000 | ORGANIC EL DISPLAY DEVICE - An organic EL display device includes lower electrodes each provided for each of pixels, a bank layer formed so as to cover the peripheries of the lower electrodes and including bank openings through each of which a portion of the lower electrode is exposed, a light-emitting layer, an organic layer including portions each formed in the bank opening, a first barrier layer covering the organic layer, a second barrier layer covering the first barrier layer, an intermediate layer located at the edges of the bank openings, and light reflection films each provided under the lower electrode for each of the pixels . A first region where the intermediate layer is present when the pixel is viewed in a plan view includes, above or under the intermediate layer, a different layer structure from that of a second region inside the first region. | 2016-01-07 |
20160006001 | THIN FILM DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS BY USING THE SAME - Disclosed is a thin film deposition apparatus and a method of manufacturing an organic light-emitting display apparatus by using the thin film deposition apparatus. The thin film deposition apparatus and the method of manufacturing the organic light-emitting display apparatus using the thin film deposition apparatus reduce manufacturing time and cost. | 2016-01-07 |
20160006002 | ORGANIC ELECTRONIC DEVICES WITH MULTIPLE SOLUTION-PROCESSED LAYERS - A method for fabricating an organic light emitting device stack involves depositing a first conductive electrode layer over a substrate; depositing a first set of one or more organic layers, wherein at least one of the first set of organic layers is a first emissive layer and one of the first set of organic layers is deposited by a solution-based process that utilizes a first solvent; depositing a first conductive interlayer by a dry deposition process; and depositing a second set of one or more organic layers, wherein at least one of the second set of organic layers is a second emissive layer and one of the second set of organic layers is deposited by a solution-based process that utilizes a second solvent, wherein all layers that precede the layer deposited using the second solvent are insoluble in the second solvent. | 2016-01-07 |
20160006003 | ELECTRONIC COMPONENT PROTECTING COVER - An electronic component protecting cover includes a fixed cover portion, a hinge portion, and a rotatable cover portion. One of the fixed cover portion and the rotatable cover portion has engaging portions at two locations, and the other of the fixed cover portion and the rotatable cover portion has catching portions at two locations, the engaging portions and the catching portions being configured to be engaged with each other. Each of the engaging portions has a pair of locking tabs, and each of the catching portions has a pair of locking frames. Because each of the engaging portions and each of the catching portions has double-locking structure, sufficient locking force can be provided. | 2016-01-07 |
20160006004 | GASKET FOR SECONDARY BATTERY - An object is to provide a gasket for a secondary battery having excellent compressive restoration characteristics. A gasket for a secondary battery (particularly for a lithium secondary battery) is a gasket used as an insulation seal of a secondary battery, and is a hot-press and cold-press molded product (particularly, a product which is hot-pressed into a gasket shape under a temperature condition lower than a melting point of a tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA) that is used by 0° C. to 80° C. and is thereafter cooled under pressure) obtained by hot-pressing a skived sheet obtained by skiving a block-shaped molded body (particularly, a columnar or cylindrical molded body obtained by injecting a PFA raw material into a heated mold to be pressurized and cooling the material under pressure) made of a PFA to be deformed into a gasket shape and thereafter performing cold-pressing on the resultant to fix a shape thereof. | 2016-01-07 |
20160006005 | ELECTRONIC POWER SUPPLY DEVICE - An electronic power supply device supplies electric power from a plurality of battery cells to an electronic power equipment and has an inner case for housing the plurality of battery cells and an outer case for housing the inner case. The electronic power supply device is designed to protect the plurality of battery cells from water damage and from an impact in the event that the electronic power supply device is accidentally dropped. | 2016-01-07 |
20160006006 | BATTERY MODULE - Battery module includes a plurality of battery blocks, and connecting member for aligning and connecting the plurality of battery blocks in a predetermined arrangement direction. Each of battery blocks includes the following elements: a plurality of batteries longitudinally aligned with each other; battery case for arranging and holding the plurality of batteries; lid as a positive electrode-side insulating lid, disposed at positive electrode-side ends of batteries in battery case, for insulating positive electrodes of the batteries from positive electrode current collecting plate; lid as a negative electrode-side insulating lid, disposed at negative electrode-side ends of batteries in battery case, for insulating negative electrodes of batteries from a negative electrode current collecting plate; and at least a pair of guide grooves disposed on lid and extending in a direction parallel to each other. A pair of sliding parts provided to the connecting member is fitted into guide grooves. | 2016-01-07 |
20160006007 | BATTERY MODULE - Battery module includes the following elements: a plurality of batteries; and metallic or ceramic battery case that includes a plurality of holding parts holding corresponding batteries. Heat insulating member is disposed between wall surface of each of holding parts and corresponding one of batteries. Heat insulating member is disposed in a part between wall surface of holding part and battery so that air layer is formed between wall surface and battery. | 2016-01-07 |
20160006008 | Storage Cell Unit for a Motor Vehicle and Motor Vehicle Comprising a Storage Cell Unit - A storage cell unit for a motor vehicle having an electric drive has a housing, in which storage cells are arranged. The housing has an energy absorption region, which is deformable in event of a collision for the purpose of energy absorption. | 2016-01-07 |
20160006009 | SEPARATOR HAVING HIGH TENSILE STRENGTH, MANUFACTURING METHOD THEREFOR, AND SECONDARY BATTERY INCLUDING SAME - The present invention relates to a method for manufacturing a separator for batteries, a separator manufactured by the method, and a secondary battery including the separator. More specifically, the present invention relates to a method for manufacturing a separator having enhanced tensile strength by performing a shutdown process stopping a stretch during a process of stretching a base film of the separator. | 2016-01-07 |
20160006010 | NEGATIVE ELECTRODE FOR SECONDARY BATTERY, METHOD FOR PRODUCING SAME, AND SECONDARY BATTERY USING SAME - The present invention relates to a negative electrode for a lithium secondary battery containing a lithium sulfonate represented by a general formula (I) and provides a secondary battery that is excellent in a cycle characteristic and a storage characteristic under a high temperature environment: | 2016-01-07 |