01st week of 2016 patent applcation highlights part 56 |
Patent application number | Title | Published |
20160005511 | SLEEVE FOR A POWER CABLE | 2016-01-07 |
20160005512 | CABLE CONNECTION STRUCTURE, CABLE ASSEMBLY, METHOD FOR MANUFACTURING CABLE ASSEMBLY, AND METHOD FOR MANUFACTURING CABLE CONNECTION STRUCTURE - A cable connection structure includes a cable assembly that fixes a plurality of cables, and a mounting member connected to the cable assembly. The plurality of cables includes: core wires having core wire exposed portions where the core wires are exposed at distal ends of the plurality of cables; and jackets, each of which is formed of an insulator and covers each of the core wires. The mounting member includes a plurality of external connection electrodes to which the core wires are to be connected. The cable assembly includes a first cable fixing portion that is formed of an insoluble resin insoluble in organic solvents or alkali and that fixes the core wire exposed portions. The core wires are exposed on an end face of the first cable fixing portion and are connected to the plurality of external connection electrodes using a conductive material. | 2016-01-07 |
20160005513 | MOUNTING CABLE AND CABLE ASSEMBLY - A mounting cable includes: a metal cable that includes a core wire formed of a conductive material and a jacket formed of an insulator and covering the core wire; a cable fixing portion that fixes an end portion of the metal cable, and has an end face which is perpendicular to an axial direction of the metal cable and on which a cross section of an end portion of the core wire is exposed; an external connection electrode formed on at least one surface of the cable fixing portion, the at least one surface being in parallel with the axial direction of the metal cable; and a wire pattern that extends from an area on the core wire exposed on the end face to the external connection electrode. | 2016-01-07 |
20160005514 | METHOD FOR FORMING ELECTRONIC ELEMENT - Disclosed is a method for forming an electronic element. The method for forming an electronic element comprises: providing a first substrate comprising a compound comprising a metallic element and a non-metallic element; performing a first treatment by a laser radiation in a first region of the first substrate; and forming a first electrically conductive layer in the first region radiated by the laser. | 2016-01-07 |
20160005515 | CABLE ASSEMBLY CALIBRATION APPARATUS - A cable assembly calibration apparatus includes multiple cables and connectors placed at two end sides of the cables; the cable assembly calibration apparatus includes a calibration block and a calibration board that can perform calibration and positioning on the cable assembly in both an X direction and a Y direction; the calibration block is disposed at one end side, provided with the connector, of the cable assembly, and the calibration board is disposed at the other end side, opposite to the calibration block, of the cable assembly; and a convex structure or a concave structure is disposed on all surfaces, opposite to the cable assembly, of the calibration block and the calibration board, and the convex structure or the concave structure fits a calibration feature on the cable assembly to fasten the cable assembly. | 2016-01-07 |
20160005516 | GROMMET - A grommet ( | 2016-01-07 |
20160005517 | SEMICONDUCTOR CERAMIC COMPOSITION AND PTC THERMISTOR - A semiconductor ceramic composition with small resistivity at room temperature and large temperature coefficient of resistance is provided; the composition is represented by formula, | 2016-01-07 |
20160005518 | HIGH-TEMPERATURE SUPERCONDUCTING COIL AND SUPERCONDUCTING DEVICE - A high-temperature superconducting coil according to the invention includes an oxide superconducting wire including a tape-shaped substrate, an intermediate layer being stacked on the substrate, an oxide superconducting layer being stacked on the intermediate layer, and a metal stabilized layer being stacked on the oxide superconducting layer; a coil main body being formed by winding the oxide superconducting wire in a coil shape; and an impregnated resin layer being formed of an impregnated resin of which a thermal shrinkage rate indicating a rate of change of a length when cooling is performed from 293 K to 140 K is greater than or equal to −0.517%, the impregnated resin layer covering the coil main body. | 2016-01-07 |
20160005519 | MAGNETIC SUBSTANCE HOLDING DEVICE - A magnetic substance holding device includes: a first pole piece assembly including a first N-pole piece, a first S-pole piece, and a first permanent magnet; a second pole piece assembly including a second N-pole piece, a second S-pole piece, and a second permanent magnet; at least one first coil; at least one second coil; and a control device controlling current applied to the first coil and the second coil so as to control magnetic fluxes passing through the first coil and the second coil, thereby allowing the first pole piece assembly and the second pole piece assembly to switch between the first arrangement and the second arrangement, to control magnetic fluxes passing through the holding faces of the first pole piece assembly and the second pole piece assembly. | 2016-01-07 |
20160005520 | INDUCTOR AND METHOD OF MANUFACTURING THE SAME - An inductor and a method of manufacturing the same are disclosed. The inductor comprises: a magnetic core; at least a set of conducting coils, sleeved on the magnetic core, each of the conducting coils including a toroidal coil portion and two extending portions extending from two ends of the toroidal coil portion towards a same direction; the magnetic cover body, hermetically covering and fixing to peripherals of the conducting coil and the magnetic core; and an upper lid and the lower lid; wherein the magnetic core, the conducting coil, the magnetic cover body, the upper lid and the lower lid are integrally formed. Each of the magnetic core, the magnetic cover body, the upper lid and the lower lid includes components of an iron powder, a phosphoric acid, and a resin. When a coil turn number of the conducting coil exceeds a predetermined value, the toroidal coil portion includes at least two layers of parallelly disposed coil windings. The disclosure is adapted to a power supply, an uninterruptable power supply, an air-conditioner frequency converter and power inverter and has a lower cost and better inductance characteristics. | 2016-01-07 |
20160005521 | LIQUID COOLED INDUCTORS - An inductor assembly includes an inductor core, a winding, and a coolant conduit. The inductor core defines a cavity and the winding is disposed about the inductor core such that a portion of the winding is disposed within the cavity. The coolant conduit extends from a first end of the cavity towards an opposed second end of the cavity and includes an inlet port and an outlet port in fluid communication with each other through the coolant conduit. | 2016-01-07 |
20160005522 | PROFILING TRANSFORMER OF POWER SYSTEM - Method and system for predicting an oil temperature of a transformer for a desired load and/or predicting a load that a transformer can support for a desired time. A machine learning algorithm is developed using historical data of a transformer. After the algorithm is developed, historical data corresponding to the transformer are input into the algorithm to develop a profile of the transformer describing how the temperature of oil within the transformer is expected to change as a function of a desired load. Using the profile, the of temperature of the transformer is predicted for a desired load. In this way, a prediction is made as to whether and/or for how long a transformer may support a desired load before the oil temperature reaches a specified threshold and/or before the transformer fails due to the load. | 2016-01-07 |
20160005523 | POTTED HEAT TRANSFER MEDIA TRANSFORMER SYSTEM - A transformer system comprises various transformer components (e.g., coils, cores, rectifiers, connectors, etc.) enclosed in a housing. The transformer system can be cooled by various heat transfer methods routed through the enclosure. Some or all of the transformer components are potted in epoxy. The transformer system is suitable for any kind of environment—explosive, corrosive, even deliberate and or accidental emersion of the system into fresh or salt water, acids and explosive media. In some examples, a transformer system includes of an efficiently cooled transformer having (in one example) a switching power supply, SCR drive system and/or combined with a rectification component (e.g., MOSFET devices), a solid-state analog or digital control system, and/or integrated and passive components and circuits. | 2016-01-07 |
20160005524 | IMMERSION COOLED TOROID INDUCTOR ASSEMBLY - An inductor assembly includes a substrate that is configured to circulate coolant; an outer cylindrical housing arranged on the substrate and defining an internal cavity; a wound inductor core arranged in internal cavity; a condenser arranged between the wound inductor core and the substrate; and a working fluid disposed in the internal cavity and in contact with each of the inductor core and the condenser. The condenser is configured to condense vaporized working fluid as it traverses through the condenser. | 2016-01-07 |
20160005525 | INDUCTIVE COMPONENT - An inductive component with a magnetic circuit is made of a magnetically soft core material, the circuit having at least one gap which extends in the Y direction from a first end-side free end of the core material to an opposite second end-side end of the core material, at least one coil which is wound around at least one part of the core material, and a permanent magnet unit which consists of multiple mutually spaced individual permanent magnetic elements, each of which has a magnetizing direction, the directions oriented in an at least approximately identical manner to the Y direction The individual magnets are stacked next to one another in a mutually spaced manner in a direction which is at least approximately orthogonal to the Y direction. There is high magnetic biasing of the inductor by means of the permanent magnets, little power loss, a simple production, and a high fill factor. | 2016-01-07 |
20160005526 | MULTILAYER INDUCTOR, METHOD OF MANUFACTURING THE SAME, AND BOARD HAVING THE SAME - A multilayer inductor may include a multilayer body in which a plurality of insulating layers are stacked and of which a thickness is greater than a width; and an internal coil part formed by electrically connecting a plurality of internal coil patterns disposed on the plurality of insulating layers to each other. Side surfaces of the multilayer body opposing each other in a width direction are concave. | 2016-01-07 |
20160005527 | COIL UNIT FOR THIN FILM INDUCTOR, MANUFACTURING METHOD OF COIL UNIT FOR THIN FILM INDUCTOR, THIN FILM INDUCTOR AND MANUFACTURING METHOD OF THIN FILM INDUCTOR - A coil unit for the thin film inductor includes an insulating material and a coil pattern. The coil pattern includes an inner plating layer embedded in the insulating layer, a growth conductive layer formed on a surface of the inner plating layer and formed on a top surface and a bottom surface of the insulating layer and an outer plating layer formed on the top surface and the bottom surface of the insulating material by plating and growing based on the growth conductive layer. | 2016-01-07 |
20160005528 | HIGH PERFORMANCE HIGH CURRENT POWER INDUCTOR - An electromagnet component assembly includes a preformed conductive winding formed in at least first and second pieces for assembly with a single magnetic core with a simplified and relatively low cost manufacture. The assembly provides a power inductor operable at higher current, higher power levels with reduced direct current resistance. | 2016-01-07 |
20160005529 | WINDING LAYER PITCH COMPENSATION FOR AN AIR-CORE REACTOR - A winding layer pitch compensation for an air-core reactor which has at least two radially spaced apart concentric winding layers, includes a first set of strip-shaped star sheets, each of which is configured to be arranged radially below or above the winding layers and which are provided with at least one receiving slot along an edge extending from that edge, a second set of strip-shaped compensation sheets, each of which is provided with at least one insert slot along an extending from another edge, where a compensation sheet can be inserted into each receiving slot of a star sheet in a formfitting manner, where the star sheet engages into the insert slot of the compensation sheet in a formfitting manner, and where the slot depths of at least two receiving slots of the set of star sheets are different. | 2016-01-07 |
20160005530 | INDUCTIVE COMPONENT FOR USE IN AN INTEGRATED CIRCUIT, A TRANSFORMER AND AN INDUCTOR FORMED AS PART OF AN INTEGRATED CIRCUIT - Inductive components, such as transformers, can be improved by the inclusion of a magnetic core. However the benefit of having a core is lost if the core enters magnetic saturation. One way to avoid saturation is to provide a bigger core, but this is costly in the context of integrated electronic circuits. The inventor realized that the flux magnetic flux density varies with position in a magnetic core within an integrated circuit, causing parts of the magnetic core to saturate earlier than other parts. This reduces the ultimate performance of the magnetic core. This disclosure provides structures that delay the onset of early saturation, enabling a transformer to handle more power. | 2016-01-07 |
20160005531 | Multilayer Conductors with Integrated Capacitors and Associated Systems and Methods - A multilayer conductor includes at least one separation dielectric layer and a plurality of conductor layers stacked in an alternating manner. Each of the plurality of conductor layers includes a first conductor sublayer and a second conductor sublayer separated from the first conductor sublayer by a sublayer dielectric layer. The second conductor sublayer at least partially overlaps with the first conductor sublayer in each of the plurality of conductor layers. The multilayer conductor is included, for example, in a device including a magnetic core adjacent to at least part of the multilayer conductor. | 2016-01-07 |
20160005532 | COIL UNIT AND CONTACTLESS POWER SUPPLYING APPARATUS - In a power supplying side core around which a power supplying side resonant coil is wound that contactlessly supplies power to a power receiving side resonant coil, a pair of protrusion portions is provided that protrudes from central axis direction both sides of the power supplying side resonant coil toward the power receiving side resonant coil. Further, in a power receiving side core around which the power receiving side resonant coil is wound that contactlessly receives power from the power supplying side resonant coil, a pair of protrusion portions is provided that protrudes from central axis direction both sides of the power receiving side resonant coil toward the power supplying side resonant coil. | 2016-01-07 |
20160005533 | INDUCTOR WITH THERMALLY STABLE RESISTANCE - An inductor includes an inductor body having a top surface and a first and second opposite end surfaces. There is a void through the inductor body between the first and second opposite end surfaces. A thermally stable resistive element positioned through the void and turned toward the top surface to forms surface mount terminals which can be used for Kelvin type sensing. Where the inductor body is formed of a ferrite, the inductor body includes a slot. The resistive element may be formed of a punched resistive strip and provide for a partial turn or multiple turns. The inductor may be formed of a distributed gap magnetic material formed around the resistive element. A method for manufacturing the inductor includes positioning an inductor body around a thermally stable resistive element such that terminals of the thermally stable resistive element extend from the inductor body. | 2016-01-07 |
20160005534 | Current Transformer System With Sensor CT And Generator CT Separately Arranged In Parallel In Electric Power Line, And Integrated System For Controlling Same In Wireless Communications Network - A current transformer system according to the present invention includes: a sensor CT detachably attached to an electric power transmission/distribution line for detecting the current flowing through the power line by means of electromagnetic induction; a generator CT detachably attached to an electric power transmission/distribution line for generating power by means of electromagnetic induction; and a microprocessor for controlling the sensor CT and the generator CT. According to the present invention, the generator CT is used as the main power source so as to perform independently power supply and facilitate the construction of an additional source in need of additional power. | 2016-01-07 |
20160005535 | PROCESS OF MANUFACTURING OF SOFT MAGNETIC CERAMIC AND ITS USE - A process for the manufacture of magnetic ceramic is provided including the steps of: die compacting a powder composition into a compacted body, the composition including a mixture of soft magnetic, iron or iron-based powder, core particles of which are surrounded by an electrically insulating, inorganic coating an amount of 1 to 35% by weight of the composition; and heating and pressing the compacted body in an atmosphere to a temperature and a pressure below the decomposition temperature and pressure of the magnetic, iron or iron-based powder. | 2016-01-07 |
20160005536 | METHOD FOR MANUFACTURING A STACKED TRIANGULAR CORE TRANSFORMER - A method for manufacturing a stacked triangular core transformer includes assembling a triangular core by positioning of two halves of one leg on an assembly stand in the horizontal position; securing the positioned halves; positioning an outer clamping beam underneath two leg halves at the one end of the leg halves; assembling a yoke segment at the one end of two halves of the core leg; and forming a first clamp of the frame. The method continues by forming a second clamp of the frame at the other end of the two halves of the core leg by repeating the above positioning, assembling and forming steps; tightening the clamps together by securing means; rotating a single core frame into vertical position and releasing securing bar of the assembly stand; assembling two additional single core frames by repeating the above steps; positioning the frames in abutting position, and tightening them together. | 2016-01-07 |
20160005537 | Process for Treating a Magnetic Structure - Process for treating a magnetic structure, wherein it comprises the following steps: providing a magnetic structure comprising one first layer of magnetic material comprising a CoFeB alloy; irradiating the magnetic structure with light low-energy ions; and simultaneously holding the magnetic structure with a preset temperature profile and for a preset time. | 2016-01-07 |
20160005538 | SUPERCONDUCTING COIL PRODUCTION APPARATUS AND SUPERCONDUCTING COIL PRODUCTION METHOD - According to an embodiment, a superconducting coil production device for producing a non-coplanar three-dimensional superconducting coil by winding a tape-like superconducting wire includes: a coil bobbin; a supply reel to supply the superconducting wire to the coil bobbin; and an adjustment driving unit to adjust a position of the supply reel relative to a wrapping point so that a position of the wrapping point of the coil bobbin around which the superconducting wire being supplied from the supply reel is wrapped becomes equal to a position of the supply reel in a rotational axis direction of the supply reel. | 2016-01-07 |
20160005539 | MULTILAYER CERAMIC CAPACITOR, MANUFACTURING METHOD THEREOF, AND BOARD HAVING THE SAME - A multilayer ceramic capacitor may include: a ceramic body having first and second main surfaces opposing each other in a thickness direction and first and second end surfaces opposing each other in a length direction, a thickness of the ceramic body being greater than a width thereof; a first external electrode disposed on the first end surface and having a greater thickness in a region thereof adjacent to the second main surface than in a region thereof adjacent to the first main surface; a second external electrode disposed on the second end surface and having a greater thickness in a region thereof adjacent to the second main surface than in a region thereof adjacent to the first main surface; and first and second internal electrodes disposed in the ceramic body and connected to the first and second external electrodes, respectively. | 2016-01-07 |
20160005540 | HIGH-VOLTAGE CAPACITOR - A high-voltage capacitor includes a gas-tight enclosure containing interleaved electrodes. The dielectric of the capacitor is a pressurized gas at a pressure of at least 6 bar, and preferably 10 or 15 bar. In order to withstand this level of internal pressure, the insulating body section of the capacitor may be formed of a high-strength polymeric material. | 2016-01-07 |
20160005541 | DIELECTRIC CERAMIC COMPOSITION, STACKED CERAMIC CAPACITOR USING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A stacked ceramic capacitor that includes a ceramic body formed by stacking dielectric ceramic layers and internal electrodes mainly composed of Ni; and an external electrode formed on an outer surface of ceramic body. The dielectric ceramic layers are formed by using a dielectric ceramic composition that includes a main ingredient expressed by (K | 2016-01-07 |
20160005542 | HIGH K DIELECTRIC COMPOSITION FOR THERMOFORMABLE CAPACITIVE CIRCUITS - This invention is directed to a polymer thick film thermoformable dielectric composition with a high dielectric constant. Dielectrics made from the composition can be used in various electronic applications to enhance the performance of thermoformable capacitive circuits. | 2016-01-07 |
20160005543 | MULTILAYER CERAMIC CAPACITOR - A multilayer ceramic capacitor includes a laminated body including an inner layer portion including ceramic dielectric layers and internal electrodes, and outer layer portions including ceramic dielectric layers. External electrodes connected to the internal electrodes are provided on both ends of the laminated body. The main constituent of the inner layer portion is a perovskite-type compound represented by ABO | 2016-01-07 |
20160005544 | CAPACITOR AND METHOD OF MANUFACTURE THEREOF - An alternating current power capacitor including one or more capacitor bodies (e.g., bobbins) having conductive and dielectric film windings, wherein edges of the conductive film windings define a plane forming at least one capacitor body contact surface, one or more electrodes having one or more electrode contact surfaces and a housing operative to apply compressive force that binds the capacitor body and electrode together so that to maintain uniform electrical and thermal conductive contact throughout a plane parallel to and between the electrode contact surface and capacitor body contact surface. | 2016-01-07 |
20160005545 | Solid Electrolytic Capacitor with Integrated Fuse Assembly - A solid electrolytic capacitor with an integrated fuse assembly is provided. The fuse can be secured in a recess formed in a face of the porous anode body of the capacitor. When the fuse is secured in the recess, the fuse can be substantially flush with the face of the porous anode body in which the recess is formed. Further, the equivalent series resistance (ESR) of the fuse is reduced because the length of the connection between the fuse and the porous anode body is reduced. Further, because the fuse is integrated into the porous anode body, the capacitor can be assembled onto a circuit board via standard pick and place equipment. | 2016-01-07 |
20160005546 | PHOTOSENSITIVE PORPHYRIN DYES FOR DYE-SENSITIZED SOLAR CELLS - A photosensitive porphyrin-based dye is adapted to be used in a photoelectric converting device such as a dye-sensitized solar cell. The photosensitive porphyrin-based dye has a porphyrin center, at least one electron donor unit, at least one electron acceptor unit and an optional blocker unit wherein the units are directly connected to the porphyrin center or connected to the porphyrin center via ethynyl-bridges. | 2016-01-07 |
20160005547 | INORGANIC-ORGANIC HYBRID SOLAR CELL HAVING DURABILITY AND HIGH PERFORMANCE - Provided is a solar cell including: a first electrode; an electron transport layer positioned on the first electrode; a light absorber; a hole transport layer; and a second electrode, wherein the light absorber contains a solid-solution of at least two organic-metal halides with a perovskite structure, having different compositions from each other. | 2016-01-07 |
20160005548 | METHOD FOR SEALING A LIQUID WITHIN A GLASS PACKAGE AND THE RESULTING GLASS PACKAGE - A method for sealing a liquid within a glass package and the resulting sealed glass package are described herein where the sealed glass package can be, for example, a dye solar cell, an electro-wetting display or an organic emitting light diode (OLED) display. | 2016-01-07 |
20160005549 | ASYMMETRICAL SUPERCAPACITOR WITH ALKALINE ELECTROLYTE COMPRISING A THREE-DIMENSIONAL NEGATIVE ELECTRODE AND METHOD FOR PRODUCING SAME - An asymmetrical supercapacitor including an alkaline electrolyte, at least one separator, at least one positive electrode including a nickel-based hydroxide and a nickel-based current collector, and at least one negative electrode including a nickel-based current collector and having a porous three-dimensional structure. Some pores are open, the mean diameter of the open pores being greater than or equal to 100 μm and being less than or equal to 300 μm and two contiguous open pores ( | 2016-01-07 |
20160005550 | Method for Producing Activated Carbon Sheet and Method for Improving Impregnation of Activated Carbon Sheet with Electrolyte Solution - A method for producing an activated carbon sheet having high electrolyte impregnation capacity and high mechanical strength is provided. The method for producing an activated carbon sheet includes a sheet preparation step of preparing a sheet including an activated carbon, an electrically conductive carbon material, and a fibrous fluorocarbon resin binder, which fluorocarbon resin is polytetrafluoroethylene and/or modified polytetrafluoroethylene; and a light irradiation step of performing light irradiation of at least one side of the sheet such that the cumulative irradiation dose on the sheet surface is 50 to 1000 mJ/cm | 2016-01-07 |
20160005551 | COMPOSITE PARTICLES FOR ELECTROCHEMICAL DEVICE ELECTRODE, METHOD FOR MANUFACTURING COMPOSITE PARTICLES FOR ELECTROCHEMICAL DEVICE ELECTRODE, ELECTROCHEMICAL DEVICE ELECTRODE, AND ELECTROCHEMICAL DEVICE - A negative electrode active material, a binder resin, a water-soluble polymer, and water-insoluble polysaccharide polymer fibers are included. | 2016-01-07 |
20160005552 | High Permittivity Nanocomposites for Electronic Devices - The invention pertains to the field of electronic devices and the preparation thereof. In an aspect is an electronic device comprising a nanocomposite of carbon nanodomains homogeneously embedded in an insulating ceramic matrix, wherein the size and distribution of carbon nanodomains is such that the nanocomposite has a permittivity of greater than or equal to 200. | 2016-01-07 |
20160005553 | PLUNGER SWITCH ASSEMBLY AND METHOD OF OPERATION - A switch assembly and method of operation comprises a housing for supporting a plunger arrangement for moveable positioning of a plunger relative to the housing and plunger arrangement. The plunger arrangement comprises a retainer support for fixedly holding at least one terminal member within a retainer groove having a transverse channel passing from a first end to a second end of the retainer support. | 2016-01-07 |
20160005554 | LINEAR SELECTOR - The invention relates to a linear selector ( | 2016-01-07 |
20160005555 | LOW MOVEMENT TRIP AND INTEGRATED SIGNAL FLAG FOR MINIATURE CIRCUIT BREAKERS - A circuit breaker includes a trip mechanism having reduced trip movement and an integrated signal flag. The trip mechanism includes a spring-biased trip lever and a latching member for keeping the trip lever in an on or latched position. Upon occurrence of an abnormal current condition, the latching member is moved away from the trip lever to trip the trip mechanism. The latching member also has a catch mechanism designed to catch the trip lever after it is released, thereby halting further progress of both the trip lever and the latching member. As a result, less space is needed within the circuit breaker for trip movement compared to existing solutions. Moreover, the location of the catch mechanism on the latching member is selected such that the halting of the latching member places the integrated signal flag in an optimal viewing position within a viewing window. | 2016-01-07 |
20160005556 | High Power Current Switch - A high power switching circuit suitable for injection of high currents, typically several tens of Amperes, at high drive voltages of up to 5-10 kV, is provided using a combination of electromechanical and semiconductor switching elements that, while providing switchable polarity, substantially bypasses semiconductor switching element(s) during a substantial portion of current injection duty cycles. In this way, thermal heating of switching elements can be reduced/managed in a way that improves long term reliability of geophysical survey equipment. In addition, circuit protections can be provided to address backflow currents generated upon collapse of electromagnetic fields in inductive loads, such as is typical in geophysical surveys. | 2016-01-07 |
20160005557 | PUSH BUTTON KEYBOARD DEVICE - A keyboard device is disclosed. The keyboard device includes a base, a key top, a film actuator, a position sensor, and a controller. The key top is movably arranged on the upper surface side of the base. Disposed between the base and the key top, the film actuator bends according to an applied voltage. Also disposed between the base and the key top, the position sensor detects a position of the key top. The controller applies a voltage to the film actuator in order to generate a repulsive force corresponding to the position of the key top detected by the position sensor. | 2016-01-07 |
20160005558 | BREAK-OFF-RESISTANT CONTROL DEVICE - Control device, including:
| 2016-01-07 |
20160005559 | Gas Circuit Breaker - A gas circuit breaker is configured by comprising a tank filled with arc extinguishing gas, a pair of fixed side arc contact and moving side arc contact in the tank, a puffer chamber formed with a puffer cylinder including the moving side arc contact at its end and a fixed piston, and an insulating nozzle, attached to the end of the puffer cylinder, surrounding the moving side arc contact, that forms a flow channel to guide arc extinguishing gas from the puffer chamber to the contacts. A puffer cylinder | 2016-01-07 |
20160005560 | MODULAR SOLID DIELECTRIC SWITCHGEAR - Modular switchgear and methods for manufacturing the same. The modular switchgear includes a vacuum interrupter assembly, a source conductor assembly, and a housing assembly. The vacuum interrupter assembly includes a bushing, a fitting, and a vacuum interrupter at least partially molded within the bushing and including a movable contact and a stationary contact. The source conductor assembly includes a bushing, a fitting, and a source conductor molded within the bushing. The housing assembly includes a housing defining a chamber and a drive shaft and conductor positioned within the chamber. The housing assembly also includes a first receptacle for receiving the fitting of the vacuum interrupter assembly and a second receptacle for receiving the fitting of the source conductor assembly. The vacuum interrupter assembly, the source conductor assembly, and the housing assembly are coupled without molding the assemblies within a common housing. | 2016-01-07 |
20160005561 | LAMINATED ELECTRICAL FUSE - A fuse may include a layer stack comprising a plurality of layers defining an air gap, the layer stack including an inner layer. The inner layer may include an insulative substrate, and at least one fusible element connecting to a first terminal on a first end of the fuse and to a second terminal on a second end of the fuse. A first portion of the at least one fusible element may be disposed on a first planar surface of the insulative substrate and a second portion of the at least one fusible element disposed on a second planar surface of the insulative substrate opposite the first planar surface, wherein the first portion is electrically connected to the second portion through at least one via within the insulative substrate. | 2016-01-07 |
20160005562 | SHORT-CIRCUIT ELEMENT AND A CIRCUIT USING THE SAME - A bypass avoiding only abnormal cells or abnormal electronic components in an electronic appliance having a plurality of battery cells or electronic components is formed to decrease resistance while keeping functionality. An insulating substrate | 2016-01-07 |
20160005563 | Fuse and Method for Producing Fuse | 2016-01-07 |
20160005564 | Apparatus For Dynamic Temperature Control Of An Ion Source - An apparatus for controlling the temperature of an ion source is disclosed. The ion source includes a plurality of walls defining a chamber in which ions are generated. To control the temperature of the ion source, one or more heat shields is disposed exterior to the chamber. The heat shields are made of high temperature and/or refractory material designed to reflect heat back toward the ion source. In a first position, these heat shields are disposed to reflect a first amount of heat back toward the ion source. In a second position, these heat shields are disposed to reflect a lesser second amount of heat back toward the ion source. In some embodiments, the heat shields may be disposed in one or more intermediate positions, located between the first and second positions. | 2016-01-07 |
20160005565 | PHOTOCATHODE COUPLED X-RAY TUBE - Provided is an X-ray tube including an anode, a target on the anode, a cathode disposed separate from the target and the anode and comprising an emitter providing an electron beam to the target, and a side wall disposed between the cathode and the anode, and surrounding the target and the emitter. The side wall reflects a light generated by collision of the electron beam with the target to the cathode, and electrically insulates the cathode from the anode. | 2016-01-07 |
20160005566 | METHOD AND SYSTEM FOR ELECTRON MICROSCOPE WITH MULTIPLE CATHODES - An electron microscope system includes a laser system operable to generate an optical pulse and a pump pulse and a microscope column. The microscope column includes a multiple cathode structure having a plurality of spatially separated cathode regions. Each of the cathode regions are operable to generate an electron pulse. The microscope column also includes an electron acceleration region adjacent the multiple cathode structure, a specimen region operable to support a specimen, and a detector. | 2016-01-07 |
20160005567 | HIGH-SPEED MULTIFRAME DYNAMIC TRANSMISSION ELECTRON MICROSCOPE IMAGE ACQUISITION SYSTEM WITH ARBITRARY TIMING - An electron microscope is disclosed which has a laser-driven photocathode and an arbitrary waveform generator (AWG) laser system (“laser”). The laser produces a train of temporally-shaped laser pulses of a predefined pulse duration and waveform, and directs the laser pulses to the laser-driven photocathode to produce a train of electron pulses. An image sensor is used along with a deflector subsystem. The deflector subsystem is arranged downstream of the target but upstream of the image sensor, and has two pairs of plates arranged perpendicular to one another. A control system controls the laser and a plurality of switching components synchronized with the laser, to independently control excitation of each one of the deflector plates. This allows each electron pulse to be directed to a different portion of the image sensor, as well as to be provided with an independently set duration and independently set inter-pulse spacings. | 2016-01-07 |
20160005568 | Charged Particle Beam Apparatus, Stage Controlling Method, and Stage System - A stage system includes a stage that holds an object, a linear motor mechanism that moves the stage by a thrust force generated by a current flowing through the coil, and a control section that controls the current flowing through the coil. The current flowing through the coil in a state where the stage is maintained in the static state be greater than a minimum current amount required for generating the thrust force greater than a maximum static friction force of the stage with respect to the guide rails. | 2016-01-07 |
20160005569 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes a storage unit to store writing data of a region to be written in a target object, a first dividing unit to read the writing data and divide the region to be written into at least one first data processing region that overlaps with at least a first region where a pattern has been arranged, and at least one second data processing region that overlaps with a second region where no pattern is arranged without overlapping with the first region, a data processing unit to perform data processing of predetermined data processing contents for at least one first data processing region without performing the data processing for at least one second data processing region, and a writing unit to write a pattern on the target object, based on processed data. | 2016-01-07 |
20160005570 | Ion Beam Line - In one aspect, an ion implantation system is disclosed, which comprises a deceleration system configured to receive an ion beam and decelerate the ion beam at a deceleration ratio of at least 2, and an electrostatic bend disposed downstream of the deceleration system for causing a deflection of the ion beam. The electrostatic bend includes three tandem electrode pairs for receiving the decelerated beam, where each electrode pair has an inner and an outer electrode spaced apart to allow passage of the ion beam therethrough. Each of the electrodes of the end electrode pair is held at an electric potential less than an electric potential at which any of the electrodes of the middle electrode pair is held and the electrodes of the first electrode pair are held at a lower electric potential relative to the electrodes of the middle electrode pair. | 2016-01-07 |
20160005571 | SHOWERHEAD HAVING A DETACHABLE HIGH RESISTIVITY GAS DISTRIBUTION PLATE - Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a base having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the base, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; and a thermal gasket disposed in a gap between the base and gas distribution plate. | 2016-01-07 |
20160005572 | CHEMICAL CONTROL FEATURES IN WAFER PROCESS EQUIPMENT - Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates. | 2016-01-07 |
20160005573 | IMPEDANCE-BASED ADJUSTMENT OF POWER AND FREQUENCY - Systems and methods for impedance-based adjustment of power and frequency are described. A system includes a plasma chamber for containing plasma. The plasma chamber includes an electrode. The system includes a driver and amplifier coupled to the plasma chamber for providing a radio frequency (RF) signal to the electrode. The driver and amplifier is coupled to the plasma chamber via a transmission line. The system further includes a selector coupled to the driver and amplifier, a first auto frequency control (AFC) coupled to the selector, and a second AFC coupled to the selector. The selector is configured to select the first AFC or the second AFC based on values of current and voltage sensed on the transmission line. | 2016-01-07 |
20160005574 | PEVCD DEVICE AND METHOD USING PECVD TECHNOLOGY ON SUBSTRATE - A plasma enhanced chemical vapor deposition (PECVD) device includes a deposition box, a first electrode, and a second electrode, where the first electrode and the second electrode are arranged in the deposition box. A process chamber is arranged in the deposition box, a gas line and a pump port are respectively arranged along a first side wall and a second side wall of the deposition box, and a valve is arranged along a third side wall of the deposition box. The first electrode is arranged in an inside of the process chamber, and is connected to a radio frequency (RF) power source. A first end of the first electrode corresponds to the valve and is adjacent to the pump port. The PECVD device further includes an electrode regulating device, the electrode regulating device adjusts an angle between the first electrode and the second electrode to make a plasma airflow between the first electrode and the second electrode be even, which reduces a thickness difference of a film in different areas due to the airflow deflecting to a valve. | 2016-01-07 |
20160005575 | PLASMA SOURCE - The invention relates to a plasma source ( | 2016-01-07 |
20160005576 | TITANIUM TARGET FOR SPUTTERING AND MANUFACTURING METHOD THEREOF - A high-purity titanium target for sputtering having a purity of 5N5 (99.9995%) or higher, wherein the high-purity titanium target has no macro pattern on the target surface. An object of this invention is to provide a high-quality titanium target for sputtering, in which impurities causing particles and abnormal discharge phenomena are reduced, and which is free from fractures and cracks even during high-rate sputtering, and capable of stabilizing the sputtering characteristics, effectively inhibiting the generation of particles during deposition, and improving the uniformity of deposition. | 2016-01-07 |
20160005577 | Pulsed Sputtering Apparatus and Pulsed Sputtering Method - An object of the invention is to reduce sizes of an inert gas supply and exhaust devices used for a pulse sputtering device. Another object is to efficiently supply suitable quantity of the inert gas to a place where the inert gas is required in the pulse sputtering device. Therefore, a provided pulse sputtering device has a sputtering source that performs pulse discharge and generates plasma, a gas injection valve that injects and supplies an inert gas to the sputtering source and a controller that controls the sputtering source and the gas injection valve. The controller controls the sputtering source and the gas injection valve such that the gas injection valve injects the inert gas intermittently and such that a part of a period, in which the pulse discharge occurs in the sputtering source, overlaps with a part of a period, in which the gas injection valve injects and supplies the inert gas. | 2016-01-07 |
20160005578 | PARALLEL ELEMENTAL AND MOLECULAR MASS SPECTROMETRY ANALYSIS WITH LASER ABLATION SAMPLING - An apparatus for mass spectrometry includes a laser ablation sampler comprising a laser ablation chamber and a laser which produces a laser beam. The laser irradiates and ablates a material from a sample placed within the laser ablation chamber so as to generate an ablated sample material. A transfer tube system comprising transfer tubes connect the laser ablation sample with, and provides a parallel and simultaneous transport of the ablated sample material to, each of a soft and a hard ionization source. The soft and hard ionization sources interact with the ablated sample material to respectively generate ion populations having a mass-to-charge ratio distribution. These respective mass-to-charge ratio distributions are respectively transmitted to a molecular mass spectrometer and to an elemental mass spectrometer which provide information on the mass-to-charge ratio distribution. The mass-to-charge ratio distributions are used to characterize a composition of the ablated sample material. | 2016-01-07 |
20160005579 | MULTI-POLE ION TRAP FOR MASS SPECTROMETRY - An ion trap includes a containment region for containing ions, and a plurality of electrodes positioned on a regular polyhedral structure encompassing the containment region. An electrode is positioned on each vertex of the encompassing structure and at least one of the polygonal surfaces includes additional electrodes configured to form a plurality of quadrupoles on the surface. Alternating RF voltage is applied to the plurality of electrodes, so that directly neighboring electrodes are of equal amplitude and opposite polarity at any point in time. This configuration on the polyhedral structure forms a potential barrier for repelling the ions from each of the regular polygonal surfaces and containing them in the trap. Mass selective filters can be formed from the quadrupoles for parallel mass analysis in different m/z windows. Application of a small DC potential to a plate electrode outside the quadrupoles preferentially depletes single charged ions for enhanced signal-to-noise analysis. | 2016-01-07 |
20160005580 | MULTI-REFLECTION MASS SPECTROMETER - A multi-reflection mass spectrometer comprising two ion-optical mirrors, each mirror elongated generally along a drift direction (Y), each mirror opposing the other in an X direction and having a space therebetween, the X direction being orthogonal to Y; the mass spectrometer further comprising one or more compensation electrodes each electrode being located in or adjacent the space extending between the opposing mirrors; the compensation electrodes being configured and electrically biased in use so as to produce, in at least a portion of the space extending between the mirrors, an electrical potential offset which: (i) varies as a function of the distance along the drift length, and/or; (ii) has a different extent in the X direction as a function of the distance along the drift length. In a preferred embodiment the period of ion oscillation between the mirrors is not substantially constant along the whole of the drift length. | 2016-01-07 |
20160005581 | MULTIPLE ION GATE METHOD AND APPARATUS - A second gate in an Ion Mobility Spectrometer is used to select or block different time windows of the ion mobility spectrum. A second gate in the Ion Mobility Mass Spectrometer is used to modulate peak intensities in the IMS spectrum, allowing each peak in the IMS spectrum to be unambiguously matched with its set of fragment ions in a subsequent MS-MS mass spectrum. | 2016-01-07 |
20160005582 | Ion Trap Mass Spectrometer - A mass spectrometer including an ion source, an ion guide, a pulsed converter, and an electrostatic analyzer is disclosed, along with a method of mass spectrometry and an ion injector. The ion source generates ions, such as ions within a continuous or a quasi-continuous ion beam. The ion guide receives a portion of the ions generated by the ion source. The pulsed converter, which receives ions from the ion guide, includes at least one electrode connected to a RF signal. The pulsed converter may include a means for ejecting the ions in the form of ion packets. The electrostatic analyzer forms a two-dimensional electrostatic field in an X-Y plane. The electrostatic field is substantially extended in a Z-direction that is locally orthogonal to the X-Y plane and may be curved or linear. Ions undergo isochronous ion oscillations in the electrostatic field. The pulsed converter and electrostatic analyzer are Z-directionally elongated. | 2016-01-07 |
20160005583 | REFLECTORS FOR TIME-OF-FLIGHT MASS SPECTROMETERS - The invention relates to reflectors for time-of-flight mass spectrometers, and especially their design. A Mamyrin reflector is provided which consists of metal plates with cut-out internal apertures, and symmetric shielding edges which are set back from the inner edges. The dipole field formed by these shielding edges penetrates only slightly through the plates and into the interior of the reflector. With a good mechanical design, the resolving power of the time-of-flight mass spectrometer increases by around fifteen percent compared to the best prior art to date. | 2016-01-07 |
20160005584 | Ion Trap Mass Spectrometer - An electrostatic mass spectrometer and a method of mass spectrometric analysis utilizing novel traps are disclosed. The mass spectrometer includes an ion source, an ion pulse injector, an ion detector, a set of analyzer electrodes connected to a set of power supplies, and a vacuum chamber enclosing the set of analyzer electrodes. The analyzer electrodes have multiple sets of elongated slits forming an array of elongated volumes. Each elongated volume is formed by a single set of slits aligned between the electrodes, and each volume forms a two-dimensional electrostatic field in an X-Y plane and is extended in a locally orthogonal Z-direction. Each two-dimensional field is arranged to trap moving ions in the X-Y plane and to enable isochronous ion motion along a mean ion trajectory within the X-Y plane. | 2016-01-07 |
20160005585 | MULTI-REFLECTION MASS SPECTROMETER - A multi-reflection mass spectrometer is provided comprising two ion-optical mirrors, each mirror elongated generally along a drift direction (Y), each mirror opposing the other in an X direction, the X direction being orthogonal to Y, characterized in that the mirrors are not a constant distance from each other in the X direction along at least a portion of their lengths in the drift direction. In use, ions are reflected from one opposing mirror to the other a plurality of times while drifting along the drift direction so as to follow a generally zigzag path within the mass spectrometer. The motion of ions along the drift direction is opposed by an electric field resulting from the non-constant distance of the mirrors from each other along at least a portion of their lengths in the drift direction that causes the ions to reverse their direction. | 2016-01-07 |
20160005586 | DIFFERENTIALLY PUMPED DUAL LINEAR QUADRUPOLE ION TRAP MASS SPECTROMETER - The present disclosure provides a new tandem mass spectrometer and methods of using the same for analyzing charged particles. The differentially pumped dual linear quadrupole ion trap mass spectrometer of the present disclose includes a combination of two linear quadrupole (LQIT) mass spectrometers with differentially pumped vacuum chambers. | 2016-01-07 |
20160005587 | Ion Trap Mass Spectrometer - An electrostatic analyzer including at least one first set of electrodes, at least one second set of electrodes, and a field free space separating the two sets of electrodes is disclosed. The two sets of electrodes form two-dimensional electrostatic fields of ion mirrors and are arranged to provide isochronous ion oscillations in an x-y plane. Both sets of electrodes are curves at a constant curvature radius R along a third locally orthogonal Z-direction to form a torroidal field region. A related method is also disclosed. | 2016-01-07 |
20160005588 | Plasma Light Source, Inspection Apparatus Including Plasma Light Source, and Method of Generating Plasma Light - A plasma light source includes a chamber having an ionizable medium therein, an ignition source configured to provide first electromagnetic radiation to the chamber, a sustaining source configured to separately provide second electromagnetic radiation to the chamber, a first curved mirror positioned adjacent the chamber, and a second curved mirror positioned opposite the first mirror and arranged to direct the first electromagnetic radiation toward the chamber. The second electromagnetic radiation may be different than the first electromagnetic radiation. Related devices and methods of operation are also discussed. | 2016-01-07 |
20160005589 | EXTENDED MICROWAVE POWERED LAMP - An elongated microwave powered lamp ( | 2016-01-07 |
20160005590 | METHOD AND APPARATUS FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes obtaining first raw data by measuring an overlay of a semiconductor wafer of a first lot and generating a regression equation based on the first raw data. A semiconductor wafer of a second lot is aligned based on a coefficient of the regression equation, second raw data is obtained by measuring an overlay of the aligned semiconductor wafer of the second lot, and the regression equation is corrected based on the second raw data. Correction of the regression equation includes dividing the regression equation into an initial equation and a residual equation excluding the initial equation from the regression equation, correcting a coefficient of the initial equation; and correcting a coefficient of the residual equation. | 2016-01-07 |
20160005591 | Method and Apparatus for Enhanced Cleaning and Inspection - A cleaning and inspection system includes a cleaning chamber and retaining structure disposed within the cleaning chamber and configured to secure an article to be cleaned within the cleaning chamber. The cleaning and inspection system also includes a gas distributor disposed within the cleaning chamber and configured to distribute a turbulent flow of gas into the cleaning chamber that facilitates removal of foreign particles from a surface of the article. Further, the system includes a particle collection surface positioned to collect foreign particles removed from the surface of the article. | 2016-01-07 |
20160005592 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - In a substrate processing apparatus, with an internal space of a chamber brought into a reduced pressure atmosphere, a first processing liquid is supplied onto an upper surface of a substrate while the substrate is rotated, and the first processing liquid is thereby quickly spread from a center portion toward a peripheral portion on the upper surface of the substrate. It is thereby possible to coat the upper surface of the substrate with the first processing liquid in a shorter time as compared with under normal pressure. Further, by sucking the first processing liquid from the vicinity of an edge of the substrate, it is possible to coat the upper surface of the substrate with the first processing liquid in a still shorter time. As a result, it is possible to shorten the time required for the processing of the substrate. | 2016-01-07 |
20160005593 | METHOD FOR MANUFACTURING A CIRCULAR WAFER BY POLISHING THE PERIPHERY, INCLUDING A NOTCH OR ORIENTATION FLAT, OF A WAFER COMPRISING CRYSTAL MATERIAL, BY USE OF POLISHING TAPE - Provided is a method for producing a circular wafer using a grinding tape to grind the edge of a wafer comprising a crystalline material. A primary grinding step is provided for contacting a grinding body to the peripheral portion of a wafer placed centered on a horizontal stage and rotating the stage, thus grinding the peripheral portion. The radius of the wafer is measured, and a radius is set that is no greater than the measured smallest radius, and the difference Δr between the set radius and the measured wafer radius along the peripheral portion is determined. The portions of the peripheral portion at which Δr is greater than a predetermined value are determined and a secondary grinding step is provided for contacting the peripheral portion and the grinding body, rotating the stage forwards and backwards in a predetermined range of rotational angles, and grinding the peripheral portion. | 2016-01-07 |
20160005594 | HIGH EFFICIENCY APPARATUS AND METHOD FOR DEPOSITING A LAYER ON A THREE DIMENSIONAL STRUCTURE - In one embodiment, a processing apparatus may include a process chamber configured to house a substrate and a hybrid source assembly that includes a gas channel coupled to a molecular source; and a plasma chamber configured to generate a plasma and isolated from the gas channel. The processing apparatus may also include an extraction assembly disposed between the hybrid source assembly and process chamber, coupled to the gas channel and plasma chamber, and configured to direct an ion beam to a substrate, the ion beam comprising angled ions wherein the angled ions form a non-zero angle with respect to a perpendicular to a substrate plane; and configured to direct a molecular beam comprising molecular species received from the gas channel to the substrate. | 2016-01-07 |
20160005595 | Photoresist and Method of Manufacture - A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating additive in order to form a floating additive region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating additive may comprise an additive group which will decompose along with a fluorine unit bonded to the additive group which will decompose. Additionally, adhesion between the middle layer and the photoresist may be increased by applying an adhesion promotion layer using either a deposition process or phase separation, or a cross-linking may be performed between the middle layer and the photoresist. | 2016-01-07 |
20160005596 | ULTRA-CONFORMAL CARBON FILM DEPOSITION LAYER-BY-LAYER DEPOSITION OF CARBON-DOPED OXIDE FILMS - Embodiments of the invention relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer with a predetermined thickness over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, wherein a volumetric flow rate of hydrocarbon source: plasma-initiating gas: dilution gas is in a ratio of 1:0.5:20, generating a plasma at a deposition temperature of about 300 C to about 500 C to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate, and removing the patterned features. | 2016-01-07 |
20160005597 | ADVANCED ULTRA LOW K SICOH DIELECTRICS PREPARED BY BUILT-IN ENGINEERED PORE SIZE AND BONDING STRUCTURED WITH CYCLIC ORGANOSILICON PRECURSORS - Disclosed herein is an ultra-low dielectric (k) film and methods of making thereof. A ultra-low k film has a covalently bonded network comprising atoms of silicon, oxygen, carbon, and hydrogen, a cyclotrisilane structure, and a plurality of pores having a pore size distribution (PSD) of less than about 1.1 nanometers (nm). The ultra-low k film has a k value of less than about 2.4 and at least about 28 atomic percent of carbon. | 2016-01-07 |
20160005598 | INHIBITING DIFFUSION OF ELEMENTS BETWEEN MATERIAL LAYERS OF A LAYERED CIRCUIT STRUCTURE - Methods for fabricating a layered circuit structure are provided, which include, for instance: depositing a first material layer above a substrate, the first material layer having an oxidized upper surface; providing a second material layer over the oxidized upper surface of the first material layer; and inhibiting diffusion of one or more elements from the oxidized upper surface of the first material layer into either the first material layer or the second material layer during the providing of the second material layer over the oxidized upper surface of the first material layer. The inhibiting may include one or more of modifying a characteristic(s) of the first material layer, forming a protective layer over the oxidized upper surface of the first material layer, or altering at least one process parameter employed in providing the second material layer. | 2016-01-07 |
20160005599 | METHOD FOR FORMING ALIGNED OXIDE SEMICONDUCTOR WIRE PATTERN AND ELECTRONIC DEVICE USING SAME - A method for forming an aligned oxide semiconductor wire pattern includes: dissolving an oxide semiconductor precursor and an organic polymer in distilled water or an organic solvent to provide a composite solution of an oxide semiconductor precursor/organic polymer; continuously discharging the composite solution of the oxide semiconductor precursor/organic polymer in a vertical upper direction from a substrate to align an oxide semiconductor precursor/organic polymer composite wire on the substrate; and heating the oxide semiconductor precursor/organic polymer composite wire to remove the organic polymer and converting the oxide semiconductor precursor into an oxide semiconductor to form an aligned oxide semiconductor wire pattern. | 2016-01-07 |
20160005600 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING DISPLAY APPARATUS, THIN FILM TRANSISTOR SUBSTRATE, AND DISPLAY APPARATUS - A method of manufacturing a thin film transistor substrate includes forming an amorphous silicon layer on a substrate, the substrate having a rectangular shape, and irradiating the amorphous silicon layer with a laser beam at a random pitch, such that the amorphous silicon layer is crystallizes into a polycrystalline silicon layer, wherein the laser beam has a major axis and a minor axis, the major axis being non-parallel with respect to sides of the substrate. | 2016-01-07 |
20160005601 | INTEGRATED CIRCUIT FABRICATION - A method for defining patterns in an integrated circuit comprises defining a plurality of features in a first photoresist layer using photolithography over a first region of a substrate. The method further comprises using pitch multiplication to produce at least two features in a lower masking layer for each feature in the photoresist layer. The features in the lower masking layer include looped ends. The method further comprises covering with a second photoresist layer a second region of the substrate including the looped ends in the lower masking layer. The method further comprises etching a pattern of trenches in the substrate through the features in the lower masking layer without etching in the second region. The trenches have a trench width. | 2016-01-07 |
20160005602 | METHODS OF REMOVING RESIDUAL POLYMERS FORMED DURING A BORON-DOPED AMORPHOUS CARBON LAYER ETCH PROCESS - Methods for removing residual polymers formed during etching of a boron-doped amorphous carbon layer are provided herein. In some embodiments, a method of etching a feature in a substrate includes: exposing a boron doped amorphous carbon layer disposed on the substrate to a first plasma through a patterned mask layer to etch a feature into the boron doped amorphous carbon layer, wherein the first plasma is formed from a first process gas that reacts with the boron doped amorphous carbon layer to form residual polymers proximate a bottom of the feature; and exposing the residual polymers to a second plasma through the patterned mask layer to etch the residual polymers proximate the bottom of the feature, wherein the second plasma is formed from a second process gas comprising nitrogen (N | 2016-01-07 |
20160005603 | PATTERN FORMING METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In a manufacturing method of a semiconductor device according to an embodiment, a processing target film is formed above a substrate. A buffer layer in a polycrystalline state or an amorphous state is formed on the processing target film. A mask material is formed on the buffer layer. The processing target film is etched using the mask material as a mask. The buffer layer has an etching rate smaller than the processing target film. | 2016-01-07 |
20160005604 | Manufacturing Method of Semiconductor Device - According to an embodiment, a manufacturing method of a semiconductor device includes: forming a first film on a processing target by using a first material; forming a second film on the first film by using a second material; selectively removing the second and first films to provide an opening pierced in the second and first films; selectively forming a metal film on an inner surface of the opening in the first film; and processing the processing target by using the metal film as a mask. | 2016-01-07 |
20160005605 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - In a manufacturing method for a semiconductor device according to an embodiment, a first heat treatment to anneal or oxidize an SiC layer in an atmosphere where a gas including carbon (C) exists is applied. Further, the semiconductor device according to the embodiment includes: an SiC substrate having a first surface and a second surface; a first conductivity type SiC layer disposed on the first surface side of the SiC substrate, and including a low level density region having Z | 2016-01-07 |
20160005606 | IMPURITY INTRODUCING METHOD, IMPURITY INTRODUCING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT - A method for introducing impurity into a semiconductor substrate includes bringing a solution containing a compound of an impurity element into contact with a primary surface of a semiconductor substrate; and irradiating the primary surface of the semiconductor substrate with a laser beam through the solution to raise a temperature of the primary surface of the semiconductor substrate at a position irradiated by the laser beam so as to dope the impurity element into the semiconductor substrate. The laser beam irradiation is performed such that the raised temperature does not return to room temperature until a prescribed dose of the impurity element is caused to be doped into the semiconductor substrate. | 2016-01-07 |
20160005607 | METHOD FOR SELECTIVELY DEPOSITING A LAYER ON A THREE DIMENSIONAL STRUCTURE - A method may include providing a substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane; directing an ion beam comprising angled ions to the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, wherein a first portion of the substrate feature is exposed to the ion beam and wherein a second portion of the substrate feature is not exposed to the ion beam; directing molecules of a molecular species to the substrate wherein the molecules of the molecular species cover the substrate feature; and providing a second species to react with the molecular species, wherein selective growth of a layer comprising the molecular species and the second species takes place such that a first thickness of the layer grown on the first portion is different from a second thickness grown on the second portion. | 2016-01-07 |
20160005608 | Femtosecond Laser-Induced Formation Of Submicrometer Spikes On A Semiconductor Substrate - The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface. | 2016-01-07 |
20160005609 | MANUFACTURING METHOD OF GRAPHENE MODULATED HIGH-K OXIDE AND METAL GATE MOS DEVICE - A manufacturing method of a graphene modulated high-k oxide and metal gate Ge-based MOS device, which comprises the following steps: 1) introducing a graphene thin film on a Ge-based substrate; 2) conducting fluorination treatment to the graphene thin film to form fluorinated graphene; 3) activating the surface of the fluorinated graphene by adopting ozone plasmas, and then forming a high-k gate dielectric on the surface of the fluorinated graphene through an atomic layer deposition technology; and 4) forming a metal electrode on the surface of the high-k gate dielectric. Since the present invention utilizes the graphene as a passivation layer to inhibit the formation of unstable oxide GeO | 2016-01-07 |
20160005610 | METHOD OF FABRICATING A CHARGE-TRAPPING GATE STACK USING A CMOS PROCESS FLOW - A method of fabricating a memory device is described. Generally, the method includes: forming on a surface of a substrate a dielectric stack including a tunneling dielectric and a charge-trapping layer overlying the tunneling dielectric; depositing a first cap layer comprising an oxide over the dielectric stack; forming a second cap layer comprising a nitride over the first cap layer; patterning the first and second cap layers and the dielectric stack to form a gate stack of a memory device; removing the second cap layer; and performing an oxidation process to form a blocking oxide over the charge-trapping layer, wherein the oxidation process consumes the first cap layer. Other embodiments are also described. | 2016-01-07 |