01st week of 2019 patent applcation highlights part 66 |
Patent application number | Title | Published |
20190006524 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE - An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes a base substrate; a first conductive layer located on the base substrate, including a source electrode of a switching element; and a color filter layer located on the first conductive layer, wherein the source electrode of the switching element and the color filter layer are abutted in a direction perpendicular to the base substrate. | 2019-01-03 |
20190006525 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME AND SEMICONDUCTOR DEVICE COMPRISING SAID THIN FILM TRANSISTOR - A thin film transistor having a high operation speed with a field effect mobility greater than 20 cm | 2019-01-03 |
20190006526 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor base body where a second semiconductor layer is stacked on a first semiconductor layer, a trench is formed on a surface of the second semiconductor layer, and a third semiconductor layer which is formed of an epitaxial layer is formed in the inside of the trench; a first electrode; an interlayer insulation film which has a predetermined opening; and a second electrode, wherein metal is filled in the opening, the opening is disposed at a position avoiding a center portion of the third semiconductor layer, the second electrode is connected to the third semiconductor layer through the metal, and a surface of the center portion of the third semiconductor layer is covered by the interlayer insulation film. | 2019-01-03 |
20190006527 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE | 2019-01-03 |
20190006528 | HIGH VOLTAGE DEVICE - A high voltage device includes a semiconductor substrate, an ion well, a Schottky diode in the ion well, an isolation structure in the ion well surrounding the Schottky diode, and an assistant gate surrounding the Schottky diode. The assistant gate is disposed only on the isolation structure and is not in direct contact with the ion well. | 2019-01-03 |
20190006529 | EDGE TERMINATION DESIGNS FOR SILICON CARBIDE SUPER-JUNCTION POWER DEVICES - The subject matter disclosed herein relates to silicon carbide (SiC) power devices and, more specifically, to SiC super-junction (SJ) power devices. A SiC-SJ device includes a plurality of SiC semiconductor layers of a first conductivity-type, wherein a first and a second SiC semiconductor layer of the plurality of SiC semiconductor layers comprise a termination region disposed adjacent to an active region with an interface formed therebetween, an act wherein the termination region of the first and the second SiC semiconductor layers comprises a plurality of implanted regions of a second conductivity-type, and wherein an effective doping profile of the termination region of the first SiC semiconductor layer is different from an effective doping profile of the termination region of the second SiC semiconductor layer. | 2019-01-03 |
20190006530 | VARIABLE CAPACITOR LINEARITY IMPROVEMENT THROUGH DOPING ENGINEERING - Certain aspects of the present disclosure provide a variable capacitor. The variable capacitor generally includes a semiconductor region, a dielectric layer disposed adjacent to the semiconductor region, and a first non-insulative region disposed above the dielectric layer, and a second non-insulative region disposed adjacent to the semiconductor region. In certain aspects, a doping concentration of the semiconductor region changes as a function of a distance across the semiconductor region from the dielectric layer or the second non-insulative region. | 2019-01-03 |
20190006531 | CISCSP Package and Related Methods - Implementations of semiconductor packages may include: a semiconductor die including a plurality of pads and a first dielectric layer with a plurality of openings therethrough that expose at least a portion of each of the plurality of pads. A second dielectric layer coupled to the first dielectric layer may have a thickness greater than or equal to a thickness of the first dielectric layer and a plurality of openings corresponding with the plurality of openings in the first dielectric layer. A plurality of bumps may be coupled with the plurality of pads into the plurality of openings in the first dielectric layer and in the second dielectric layer. The semiconductor package may also include a bump encapsulation material extending upwardly from the material of the plurality of pads along sides of the plurality of bumps. The package may couple with a motherboard using no underfill material. | 2019-01-03 |
20190006532 | OPTICAL DEVICE - Provided is an optical device in which an Si cap layer is provided on a Ge layer, and which is capable of effectively reducing dark current, while having a good effect on prevention of production line contamination by Ge. One embodiment of the optical device according to the present invention is provided with: a semiconductor layer which contains Ge and has a (001) surface and a facet surface between the (001) surface and a (110) surface; and a cap layer which is formed from Si, and which is formed on the (001) surface and the facet surface of the semiconductor layer. The ratio of the film thickness of the cap layer on the facet surface to the film thickness of the cap layer on the (001) surface is 0.4 or more; and the film thickness of the cap layer on the (001) surface is from 9 nm to 30 nm (inclusive). | 2019-01-03 |
20190006533 | MULTI-WELL SELENIUM DEVICE AND METHOD FOR FABRICATION THEREOF - Provided is a field shaping multi-well detector and method of fabrication thereof. The detector is configured by depositing a pixel electrode on a substrate, depositing a first dielectric layer, depositing a first conductive grid electrode layer on the first dielectric layer, depositing a second dielectric layer on the first conductive grid electrode layer, depositing a second conductive grid electrode layer on the second dielectric layer, depositing a third dielectric layer on the second conductive grid electrode layer, depositing an etch mask on the third dielectric layer. Two pillars are formed by etching the third dielectric layer, the second conductive grid electrode layer, the second dielectric layer, the first conductive grid electrode layer, and the first dielectric layer. A well between the two pillars is formed by etching to the pixel electrode, without etching the pixel electrode, and the well is filled with a-Se. | 2019-01-03 |
20190006534 | SOLAR CELL AND METHOD FOR MANUFACTURING SOLAR CELL - According to one example of an embodiment of the present invention, a solar cell is provided with an n-type crystalline silicon wafer; a first passivation layer, which is formed on the light receiving surface of the n-type crystalline silicon wafer, and which is configured by having, as a main component, silicon oxide, silicon carbide, or silicon nitride; an n-type crystalline silicon layer formed on the first passivation layer; a second passivation layer formed on the rear surface of the n-type crystalline silicon wafer; and a p-type amorphous silicon layer formed on the second passivation layer. | 2019-01-03 |
20190006535 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An improvement is achieved in the reliability of a semiconductor device. Over an insulating layer, an optical waveguide and a p-type semiconductor portion are formed. Over the p-type semiconductor portion, a multi-layer body including an n-type semiconductor portion and a cap layer is formed. Over a first interlayer insulating film covering the optical waveguide, the p-type semiconductor portion, and the multi-layer body, a heater located over the optical waveguide is formed. In the first interlayer insulating film, first and second contact holes are formed. A first contact portion electrically coupled with the p-type semiconductor portion is formed continuously in the first contact hole and over the first interlayer insulating film. A second contact portion electrically coupled with the cap layer is formed continuously in the second contact hole and over the first interlayer insulating film. A wire formed over a second interlayer insulating film is electrically coupled with the heater and the first and second contact portions via plugs embedded in the second interlayer insulating film. | 2019-01-03 |
20190006536 | Optical Sensor with Integrated Pinhole - An optical sensor includes a semiconductor substrate having a first conductive type. The optical sensor further includes a photodiode disposed on the semiconductor substrate and a metal layer. The photodiode includes a first semiconductor layer having the first conductive type and a second semiconductor layer, formed on the first semiconductor layer, including a plurality of cathodes having a second conductive type. The first semiconductor layer is configured to collect photocurrent upon reception of incident light. The cathodes are configured to be electrically connected to the first semiconductor layer and the second semiconductor layer is configured to, based on the collected photocurrent, to track the incident light. The metal layer further includes a pinhole configured to collimate the incident light, and the plurality of cathodes form a rotational symmetry of order n with respect to an axis of the pinhole. | 2019-01-03 |
20190006537 | SOLAR CELL AND SOLAR CELL MODULE - A solar cell includes: a first electrode; a first hole transport layer containing nickel; an inorganic material layer containing titanium; a light-absorbing layer converting light into electric charge; and a second electrode. The first electrode, the first hole transport layer, the inorganic material layer, the light-absorbing layer, and the second electrode are layered in that order. The light-absorbing layer contains a perovskite compound represented by a formula AMX3, where A is a monovalent cation, M is a divalent cation, and X is a monovalent anion. | 2019-01-03 |
20190006538 | SOLAR CELL HAVING ELECTROCHROMIC PORTION INSERTED THEREINTO AND METHOD OF FABRICATING THE SAME - The present invention relates to a solar cell having an electrochromic portion inserted thereinto and a method of fabricating the same. The solar cell includes a light-transmitting portion formed on a substrate and an electrochromic portion formed at the light-transmitting portion and having an electrochromic property, so that beauty may be improved through the color implementation, light transmittance may also be adjusted according to an external environment, and thus it is possible to flexibly cope with a change in external environment. | 2019-01-03 |
20190006539 | HIGH EFFICIENCY LOCAL BACK ELECTRODE ALUMINUM PASTE FOR CRYSTALLINE SILICON SOLAR CELLS AND ITS APPLICATION IN PERC CELLS - A high-efficiency back electrode local aluminum paste crystalline silicon solar cell is composed of the following components proportioned to weights: 70-85 of parts powder, 1-30 parts of organic carrier, 0.1-10 parts of inorganic binder, 0.1-1 parts of auxiliary conductive additives. The aluminum paste is mainly used to manufacture the passivated emitter and back electrode of silicon solar cell with dot or linear contact on rear surface. PERC aluminum paste printed on the passivated film of the silicon wafer with dot-opening or linear-opening is dried and sintered. | 2019-01-03 |
20190006540 | SOLAR CELL - A solar cell includes: a first electrode; a hole transport layer containing nickel, lithium, and oxygen; a light-absorbing layer converting light into electric charge; and a second electrode. The first electrode, the hole transport layer, the light-absorbing layer, and the second electrode are layered in that order. The light-absorbing layer contains a perovskite compound represented by a formula AMX | 2019-01-03 |
20190006541 | MONODISPERSE, IR-ABSORBING NANOPARTICLES AND RELATED METHODS AND DEVICES - Embodiments described herein generally relate to monodisperse nanoparticles that are capable of absorbing infrared radiation and generating charge carriers. In some cases, at least a portion of the nanoparticles are nanocrystals. In certain embodiments, the monodisperse, IR-absorbing nanocrystals are formed according to a method comprising a nanocrystal formation step comprising adding a first precursor solution comprising a first element of the nanocrystal to a second precursor solution comprising a second element of the nanocrystal to form a first mixed precursor solution, where the molar ratio of the first element to the second element in the first mixed precursor solution is above a nucleation threshold. The method may further comprise a nanocrystal growth step comprising adding the first precursor solution to the first mixed precursor solution to form a second mixed precursor solution, where the molar ratio of the first element to the second element in the second mixed precursor solution is below the nucleation threshold | 2019-01-03 |
20190006542 | PHOTODETECTION DEVICE AND IMAGING DEVICE - A photodetection device includes: a photoelectric converter generating charge; a first channel having first and second ends, the first end being connected to the photoelectric converter, charge being transferred from the first end toward the second end; a second channel diverging from the first channel at a first position of the first channel; a third channel diverging from the first channel at a second position of the first channel; a first accumulator accumulating charge transferred from the first channel through the second channel; a second accumulator accumulating charge transferred from the first channel through the third channel; and at least one first gate electrode switching between transfer/cutoff of charge in the second channel, and switching between transfer/cutoff of charge in the third channel, a width of the first channel at the first end being greater than a width of the first channel at the second end in a plan view. | 2019-01-03 |
20190006543 | PHOTODETECTION DEVICE AND IMAGING DEVICE - A photodetection device includes: a photoelectric converter generating charge; a first transfer channel having first and second ends, the first end being connected to the photoelectric converter, charge from the photoelectric converter being transferred from the first end toward the second end; a second transfer channel diverging from the first transfer channel at a first position; a third transfer channel diverging from the first transfer channel at a second position, further than the first position from the first end; a first charge accumulator accumulating charge transferred through the second transfer channel; a second charge accumulator accumulating charge transferred through the third transfer channel; a first gate electrode switching between transfer/cutoff of charge in the first transfer channel; and at least one second gate electrode switching between transfer/cutoff of charge in the second and third transfer channels, the third transfer channel being wider than the second transfer channel. | 2019-01-03 |
20190006544 | SOLAR CELL MODULE - A solar cell module includes a solar cell string comprising a plurality of solar cells, a light-receiving-surface protective member disposed on a light receiving surface side of the solar cell string, a back-surface protective member disposed on a back surface side of the solar cell string, and a plurality of metal films. Each of the solar cells includes a photoelectric conversion part, a patterned light-receiving-surface metal electrode provided on a light receiving surface of the photoelectric conversion part, and a patterned back-surface metal electrode provided on a back surface of the photoelectric conversion part. Each of the metal films is provided between the photoelectric conversion part of the solar cell and the back-surface protective member, forming a cell exposed region on a peripheral edge of a back surface of the solar cell. | 2019-01-03 |
20190006545 | COMPLEMENTARY CONJUGATED POLYELECTROLYTE COMPLEXES AS ELECTRONIC ENERGY RELAYS - The present invention generally relates to artificial photosystems and methods of their use, for example in artificial photosynthesis, wherein the artificial photosystems comprise one or more light-harvesting antenna (LHA) comprising a conjugated polyelectrolyte (CPE) complex (CPEC) comprising a donor CPE and an acceptor CPE, wherein the donor CPE and acceptor CPE are an electronic energy transfer (EET) donor/acceptor pair. | 2019-01-03 |
20190006546 | OPTICAL DEVICE FOR REDUCING THE VISIBILITY OF ELECTRICAL INTERCONNECTIONS IN SEMI-TRANSPARENT THIN-FILM PHOTOVOLTAIC MODULES - The invention relates to thin-film photovoltaic modules which are made semi-transparent by laser ablation or by lithography processes. The transparency areas form a network of repetitive patterns such as a network of circular or hexagonal holes. The electrical insulation lines and the electrical interconnection lines between the cells are positioned at random either in the transparency areas or in the non-transparency areas, and demonstrate visual effects which reduce the homogeneous quality of the photovoltaic module. In order to make them invisible to the naked eye, the electrical insulation lines are positioned in transparency areas arranged in straight bands having high transparency density, and the electrical interconnection lines are positioned in transparency areas arranged in straight bands having low transparency density. | 2019-01-03 |
20190006547 | PHOTOVOLTAIC MODULE ENCAPSULATION - There is provided a method of encapsulating a photovoltaic module comprising a plurality of photovoltaic devices. The method comprises forming a wall of compact glass that extends from a periphery of a surface of a first glass sheet to a periphery of an opposing surface of a second glass sheet, the plurality of photovoltaic devices being located within a volume enclosed by the first glass, the second glass sheet and the wall of compact glass, wherein the wall of compact glass is formed from a plurality of courses of glass fit, and sealing the enclosed volume using laser-assisted glass fit bonding. | 2019-01-03 |
20190006548 | NOVEL SINGLE PHOTON AVALANCHE DIODE - A photodetector includes: a substrate having a first doping type; a first semiconductor region having a second doping type, the first semiconductor region extending into the substrate from a front side of the substrate; and a second semiconductor region having the first doping type, the second semiconductor region further extending into the substrate from a bottom boundary of the first semiconductor region, wherein when the photodetector operates under a Geiger mode, the second semiconductor region is fully depleted to absorb a radiation source received from a back side of the substrate. | 2019-01-03 |
20190006549 | OPTOELECTRONIC DEVICE MODULE HAVING A SILICON INTERPOSER - Optoelectronic device modules having a silicon photonics transmitter die connected to a silicon interposer are described. In an example, the optoelectronic device module includes a silicon photonics transmitter die connected to a silicon interposer, and the silicon interposer is disposed between the silicon photonics transmitter die and a substrate. The silicon interposer provides an electrical interconnect between the silicon photonics transmitter die and the substrate, and reduces a likelihood that a hybrid silicon laser on the silicon photonics transmitter die will be damaged during module operation. | 2019-01-03 |
20190006550 | SEMICONDUCTOR DEVICE - To reduce a size of a semiconductor device. The semiconductor device includes: a first light emitting element which emits first light with a first wavelength to send a first signal; a second light emitting element which emits second light with a second wavelength to send a second signal; a first light receiving element which receives the first light to receive the first signal; and a second light receiving element which overlaps the first light receiving element in plan view and receives the second light transmitted through the first light receiving element to receive the second signal. | 2019-01-03 |
20190006551 | OPTICAL COUPLING DEVICE - An optical coupling device includes a first lead frame, a second lead frame, a first mounting member, a second mounting member, the members respectively provided on the first lead frame and, the second lead frame a light emitter provided on the first mounting member, a light receiver provided on the second mounting member, a first wire and a second wire electrically connecting the light emitter to the first lead frame, and the light receiver to the second lead frame, and an outer resin enclosure enclosing a part of the first lead frame and the second lead frame, the light emitter, and the light receiver, wherein at least the light emitter and the light receiver in the outer resin enclosure are covered with a silicone resin cured material. | 2019-01-03 |
20190006552 | METHOD OF MANUFACTURING PATTERNED SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - A method of manufacturing a patterned substrate includes: providing an exposure mask, the exposure mask comprising: a plurality of inner light-shielding portions arranged in a lattice, a light-transmissive portion integrally connecting regions surrounding the plurality of inner light-shielding portions, and an outer light-shielding portion surrounding the light-transmissive portion; performing a plurality of exposures of a photoresist layer disposed on a substrate in a step-and-repeat-manner using the exposure mask, so as to form a plurality of inner projected parts corresponding to the inner light-shielding portions, the inner projected parts being aligned in a lattice as a whole; developing the photoresist layer on which the plurality of exposures have been performed; and etching the substrate using the developed photoresist layer as a mask; wherein, in the step of performing the plurality of exposures, a region corresponding to the light-transmissive portion formed by a predetermined one of the exposures and a region corresponding to the light-transmissive portion formed by another one of the exposures do not overlap each other on shortest straight lines connecting outermost inner projected parts formed by the predetermined exposure and respective inner projected parts formed by the another exposure that are located closest to the outermost inner projected parts of the predetermined exposure, while portions of the region corresponding to the light-transmissive portion formed by the predetermined exposure and portions of the region corresponding to the light-transmissive portion formed by the another exposure overlap each other in places other than the shortest straight lines. | 2019-01-03 |
20190006553 | Semiconductor Structure with Annealing - Semiconductor structures formed with annealing for use in the fabrication of optoelectronic devices. The semiconductor structures can include a substrate, a nucleation layer and a buffer layer. The nucleation layer and the buffer layer can be epitaxially grown and then annealed. The temperature of the annealing of the nucleation layer and the buffer layer is greater than the temperature of the epitaxial growth of the layers. The annealing reduces the dislocation density in any subsequent layers that are added to the semiconductor structures. A desorption minimizing layer epitaxially grown on the buffer layer can be used to minimize desorption during the annealing of the layer which also aids in curtailing dislocation density and cracks in the semiconductor structures. | 2019-01-03 |
20190006554 | METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE - A method of manufacturing a light-emitting device includes: directly bonding a plurality of light-emitting elements to a collective light-transmissive member having a plate shape, each light-emitting element comprising a plurality of electrodes; subsequently, forming stud bumps on each electrode of each light-emitting element; subsequently, dividing the collective light-transmissive member to obtain a plurality of light-transmissive members on each of which one or more of the light-emitting elements are bonded; and subsequently, mounting the light-emitting elements on or above a mounting base by a flip-chip technique. | 2019-01-03 |
20190006555 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view. | 2019-01-03 |
20190006556 | QUANTUM DOTS AND DEVICES INCLUDING THE SAME - A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium. | 2019-01-03 |
20190006557 | LIGHT EMITTING DISPLAY DEVICE - A light emitting display device includes: a light emitting element that includes a light emitting layer between a first electrode and a second electrode; a wavelength conversion layer overlapping the light emitting element; and an uneven layer that includes a plurality of furrows between the light emitting element and the wavelength conversion layer, wherein a shortest distance between a bottom surface of the plurality of furrows and the wavelength conversion layer is 0.1 um or greater. | 2019-01-03 |
20190006558 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING SAME - A group III nitride semiconductor light-emitting element having longer element life than conventional group III nitride semiconductor light-emitting elements and a method of manufacturing the same are provided. A group III nitride semiconductor light-emitting element | 2019-01-03 |
20190006559 | MICRO LIGHT EMITTING DIODE AND DISPLAY PANEL - A micro light emitting diode including an epitaxial layer, an insulation layer, a first electrode, and a second electrode is provided. The insulation layer is located on a surface of the epitaxial layer and has a first through hole and a second through hole. The first electrode is electrically connected to a first-type semiconductor layer of the epitaxial layer through the first through hole and has a plurality of first-electrode flat portions. The first-electrode flat portions respectively have different horizontal heights relative to the epitaxial layer. The second electrode is electrically connected to a second-type semiconductor layer of the epitaxial layer through the second through hole and has a plurality of second-electrode flat portions. The second-electrode flat portions respectively have different horizontal heights relative to the epitaxial layer. A display panel is also provided. | 2019-01-03 |
20190006560 | LIGHT-EMITTING DEVICE - A light-emitting device includes: a semiconductor layered structure; a conductive substrate disposed under the semiconductor layered structure; one or more upper electrodes each disposed on a portion of an upper surface of the semiconductor layered structure; a lower electrode disposed on a lower surface of the semiconductor layered structure; one or more metal members each having light reflectivity and disposed on the lower surface of the semiconductor layered structure in a region between (i) a region directly under a respective one of the one or more the upper electrodes and (ii) the region on which the lower electrode is disposed; one or more first insulating members each disposed on the lower surface of the semiconductor layered structure in the region directly under the respective one of the one or more the upper electrodes; and one or more second insulating members on a lower surface of the metal member. | 2019-01-03 |
20190006561 | LIGHT-EMITTING DEVICE - A light-emitting device includes a light-emitting structure with an electrode layer, a light-transmitting body, a reflective layer and a metal bump. The light-transmitting body covers the light-emitting structure, and has a first side surface and a second side surface which are substantially perpendicular to each other. The reflective layer covers the first side surface without covering the second side surface. The metal bump is directly formed on the electrode layer. | 2019-01-03 |
20190006562 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT - An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body. | 2019-01-03 |
20190006563 | PHOSPHOR SHEET, WHITE LIGHT SOURCE DEVICE INCLUDING THE PHOSPHOR SHEET, AND DISPLAY DEVICE INCLUDING THE WHITE LIGHT SOURCE DEVICE - Disclosed are a phosphor sheet capable of improving color purity of each of RGB reproduced through a color filter, a white light source device including the phosphor sheet, and a display device including the white light source device. The disclosed phosphor sheet is a phosphor sheet for converting LED light into white light, including: a phosphor layer containing at least a phosphor and a resin; and a pair of transparent substrates sandwiching the phosphor layer, in which the phosphor sheet includes a coloring material having an absorption maximum wavelength of at least one of from 480 nm to 510 nm or from 570 nm to 620 nm. | 2019-01-03 |
20190006564 | Encapsulated Fluid Assembly Emissive Elements - A method is provided for fabricating an encapsulated emissive element. Beginning with a growth substrate, a plurality of emissive elements is formed. The growth substrate top surface is conformally coated with an encapsulation material. The encapsulation material may be photoresist, a polymer, a light reflective material, or a light absorbing material. The encapsulant is patterned to form fluidic assembly keys having a profile differing from the emissive element profiles. In one aspect, prior to separating the emissive elements from the handling substrate, a fluidic assembly keel or post is formed on each emissive element bottom surface. In one variation, the emissive elements have a horizontal profile. The fluidic assembly key has horizontal profile differing from the emissive element horizontal profile useful in selectively depositing different types of emissive elements during fluidic assembly. In another aspect, the emissive elements and fluidic assembly keys have differing vertical profiles useful in preventing detrapment. | 2019-01-03 |
20190006565 | ENCAPSULATION OF LIGHT-EMITTING ELEMENTS ON A DISPLAY MODULE - A display module comprises a circuit board having a front face, a plurality of light-emitting elements electrically coupled to the front face of the circuit board, a polymer encapsulating member adhered to the front face of the circuit board, the polymer encapsulating member substantially covering at least a portion of the circuit board and a portion of the plurality of light-emitting elements, the polymer encapsulating member substantially sealing the portion of the circuit board and the portion of the plurality of light-emitting elements, and an ultraviolet-radiation diminishing component in the polymer encapsulating member or on one or more of at least a portion of the circuit board or at least a portion of each of the light-emitting elements, wherein the ultraviolet-radiation diminishing component filters, blocks, or reflects more ultraviolet radiation than would be filtered, blocked, or reflected by the polymer encapsulating member without the ultraviolet-radiation diminishing component. | 2019-01-03 |
20190006566 | LIGHT EMITTING DEVICE - A light emitting device includes a base member, a light emitting element, a wire, a protective film, first and second resin members, and a light shielding portion. The base member has a conductive member. The wire connects the light emitting element and the conductive member. The protective film covers the conductive member to be spaced apart from a portion of a connecting portion. The first resin member continuously covers at least a portion of each of the protective film, a portion of the conductive member around the connecting portion, and the wire. The first resin member contains first light reflecting particles to reflect light emitted by the light emitting element. The second resin member covers the light emitting element and the first resin member. The light shielding portion is disposed on the base member and disposed on a line connecting the light emitting element and the first resin member. | 2019-01-03 |
20190006567 | METHOD FOR MANUFACTURING IMAGE DISPLAY DEVICE - A liquid photocurable resin composition not containing a thermal polymerization initiator is applied to a surface of a light-transmitting cover member having a light-shielding layer or a surface of an image display member, irradiated with ultraviolet rays under an atmosphere where the oxygen concentration is significantly decreased and cured, to form a light-transmitting cured resin layer. Subsequently, the image display member and the light-transmitting cover member are stacked through the light-transmitting cured resin layer to manufacture an image display device of the present invention. | 2019-01-03 |
20190006568 | LIGHT EMITTING DEVICE - A light emitting device includes: a light emitting element comprising: a semiconductor multilayer structure that has an electrode formation surface, a light-emitting surface opposite to the electrode formation surface, and side surfaces between the electrode formation surface and the light-emitting surface, and a pair of electrodes provided on the electrode formation surface; a covering member covering the side surfaces of the light emitting element; and an optical member disposed over the light-emitting surface of the light emitting element and an upper surface of the covering member, the optical member comprising: a light-reflective portion disposed above the light emitting element, and a light-transmissive portion disposed between the light-reflective portion and the covering member and forming a part of an outer side surface of the light emitting device. | 2019-01-03 |
20190006569 | LED FRAME, MANUFACTURE METHOD THEREOF AND LED DEVICE - An LED frame, a manufacture method thereof and an LED device are disclosed. A transparent insulating protection layer is prepared on the metal material layer of the surface of the LED frame by a process such as vapor deposition, sputtering, vacuum plating, etc., so that the metal material layer can be prevented from making contact with the external environment. The transparent insulating protection layer is a transparent inorganic material layer and the metal material layer is a silver layer or an aluminum layer. | 2019-01-03 |
20190006570 | THERMOELECTRIC CONVERSION ELEMENT, METHOD FOR MANUFACTURING THERMOELECTRIC CONVERSION ELEMENT, THERMOELECTRIC CONVERSION MODULE, AND METHOD FOR MANUFACTURING THERMOELECTRIC CONVERSION MODULE - An object of the present invention is to provide a thermoelectric conversion element having excellent thermoelectric conversion performance and excellent high-temperature durability, a method for manufacturing the thermoelectric conversion element, a thermoelectric conversion module, and a method for manufacturing the thermoelectric conversion module. A thermoelectric conversion element of the present invention has a thermoelectric conversion layer containing an organic thermoelectric conversion material and a dopant, a pair of electrodes disposed at positions separated from each other, and a buffer layer which is disposed between the thermoelectric conversion layer and each of the electrodes and electrically connects the thermoelectric conversion layer and the electrodes to each other, in which the buffer layer contains the same material as the organic thermoelectric conversion material contained in the thermoelectric conversion layer, the buffer layer does not contain a dopant or contains a dopant, and in a case where the buffer layer contains a dopant, a ratio of the dopant contained in the buffer layer to the dopant contained in the thermoelectric conversion layer is equal to or lower than 0.1. | 2019-01-03 |
20190006571 | NOVEL THERMOCOUPLE DEVICE - A semiconductor device includes a substrate; a first thermoelectric conduction leg, disposed on the substrate, and doped with a first type of dopant; a second thermoelectric conduction leg, disposed on the substrate, and doped with a second type of dopant, wherein the first and second thermoelectric conduction legs are spatially spaced from each other but disposed along a common row on the substrate; and a first intermediate thermoelectric conduction structure, disposed on a first end of the second thermoelectric conduction leg, and doped with the first type of dopant. | 2019-01-03 |
20190006572 | SHIELDED INTERCONNECTS - Disclosed herein are shielded interconnects, as well as related methods, assemblies, and devices. In some embodiments, a shielded interconnect may be included in a quantum computing (QC) assembly. For example, a QC assembly may include a quantum processing die; a control die; and a flexible interconnect electrically coupling the quantum processing die and the control die, wherein the flexible interconnect includes a plurality of transmission lines and a shield structure to mitigate cross-talk between the transmission lines. | 2019-01-03 |
20190006573 | HIGH TEMPERATURE SUPERCONDUCTORS - This disclosure will describe a novel finding and make the claim for the first time on a group of old compounds and formulated new compounds. These compounds have superconducting property at high temperatures, i.e., 151 K or higher. Several compounds were prepared, though not well-purified, at around middle of 1900s. Their chemical, structural, electric and magnetic properties were studied and reported but their superconducting property has not been known and has never been exploited because the idea of type-II superconductivity was not proposed at that time. The experiments to further verify their high temperature superconductivity require the utilization of sophisticated facilities on synthesizing highly pure compounds and the deregulation from government security authorities on purchasing the starting materials. | 2019-01-03 |
20190006574 | A PIEZOELECTRIC THIN FILM ELEMENT - There is disclosed a piezoelectric thin film element comprising a first electrode, a second electrode and one or more piezoelectric thin films there between characterised in that the thin film element has at least two of:
| 2019-01-03 |
20190006575 | FREQUENCY ADJUSTMENT METHOD OF VIBRATOR ELEMENT, VIBRATOR ELEMENT, VIBRATOR, ELECTRONIC DEVICE, AND VEHICLE - A frequency adjustment method of a vibrator element includes preparing a vibrator element that has a vibrating arm, a first weight placed on one principal surface of the vibrating arm, and a second weight placed on the other principal surface of the vibrating arm, in which the first weight has a non-overlapping region which does not overlap the second weight in a plan view in a normal direction of the principal surface, preparing a substrate including a wiring portion, and fixing the vibrator element to the substrate by causing the other principal surface side of the vibrator element to face the substrate side, and irradiating the non-overlapping region of the first weight with an energy ray from one principal surface side, removing a portion of the non-overlapping region of the first weight, and adjusting a resonance frequency of the vibrating arm. | 2019-01-03 |
20190006576 | SURFACE-MOUNT PIEZOELECTRIC SENSOR APPLIED TO LOGISTICS FOR REAL-TIME MONITORING - A surface-mount piezoelectric sensor applied to logistics for real-time monitoring is provided. The piezoelectric sensor includes a flexible substrate in the form of a cross and a conductive line formed on the flexible substrate. A plurality of sensing members corresponding in number to end faces of a packaging box is adhered to the conductive line. The cross-shaped piezoelectric sensor is placed at the bottom of the packaging box, and the sensing members of the piezoelectric sensors are bonded to the respective end faces of the packaging box by means of a turnover operation, thereby simplifying the operation process and providing an all-round monitoring effect. | 2019-01-03 |
20190006577 | METHOD FOR MANUFACTURING A MONOCRYSTALLINE PIEZOELECTRIC LAYER, AND MICROELECTRONIC, PHOTONIC, OR OPTICAL DEVICE INCLUDING SUCH A LAYER - A method of fabricating a monocrystalline piezoelectric layer, wherein the method comprises: supplying a donor substrate of the piezoelectric material, supplying a receiving substrate, transferring a layer called a “seed layer” from the donor substrate onto the receiving substrate, and implementing an epitaxy of the piezoelectric material on the seed layer until a required thickness for the monocrystalline piezoelectric layer is obtained. | 2019-01-03 |
20190006578 | PRODUCTION OF LEAD-FREE PIEZOCERAMICS IN AQUEOUS SURROUNDINGS - The invention relates to a method for producing ceramics having piezoelectric properties in predominantly aqueous suspending agents. | 2019-01-03 |
20190006579 | Method For Preparing A Sol-Gel Solution Which Can Be Used For Preparing A Barium Titanate Ceramic Doped With Hafnium And/or With At Least One Lanthanide Element - The invention relates to a method for preparing a sol-gel solution which can be used to prepare a barium titanate ceramic doped with hafnium and/or with at least one lanthanide element, comprising the following steps:
| 2019-01-03 |
20190006580 | MAGNETIC MEMORY DEVICE - A method of manufacturing a magnetic memory device includes forming a stacked structure including a magnetic element, forming a metal film which covers the stacked structure, and forming a protective insulating film formed of a metallic oxide by oxidizing the metal film. A metal element contained in the metallic oxide is selected from yttrium (Y), aluminum (Al), magnesium (Mg), calcium (Ca), zirconium (Zr) and hafnium (Hf). | 2019-01-03 |
20190006581 | MAGNETIC MEMORY DEVICES BASED ON 4D AND 5D TRANSITION METAL PEROVSKITES - Magnetic switching devices, including magnetic memory devices, are provided. The devices use high-quality crystalline films of 4d or 5d transition metal perovskite having a strong spin-orbit coupling (SOC) to produce spin-orbit torque in adjacent ferromagnetic materials via a strong spin-Hall effect. | 2019-01-03 |
20190006582 | Memory Cell Having Magnetic Tunnel Junction and Thermal Stability Enhancement Layer - A magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a thermal stability enhancement layer over the free layer of a magnetic tunnel junction. The thermal stability enhancement layer improves the thermal stability of the free layer, increases the magnetic moment of the free layer, while also not causing the magnetic direction of the free layer to become in plan. The thermal stability enhancement layer can be comprised of a layer of CoFeB ferromagnetic material. | 2019-01-03 |
20190006583 | MAGNETIC RANDOM ACCESS MEMORY STRUCTURES, INTEGRATED CIRCUITS, AND METHODS FOR FABRICATING THE SAME - Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits and/or memory cells are provided. An exemplary method for fabricating integrated circuit includes forming a bottom electrode and forming a fixed layer disposed over the bottom electrode. The fixed layer includes a hard layer disposed over a base layer. The base layer includes a seed layer of nickel (Ni) and chromium (Cr) and has a thickness of less than about 100 Angstrom (A). The method further includes forming at least a first tunnel barrier layer over the hard layer, forming a storage layer over the first tunnel barrier layer, and forming a top electrode over the storage layer. | 2019-01-03 |
20190006584 | METHOD FOR IMPROVING ENDURANCE PERFORMANCE OF 3D INTEGRATED RESISTIVE SWITCHING MEMORY - A method for improving endurance of 3D integrated resistive switching memory, comprising: Step 1: Calculating the temperature distribution in the integrated array by the 3D Fourier heat conduction equation; Step 2, selecting heat transfer mode; Step 3: selecting an appropriate array structure; Step 4: analyzing the influence of integration degree on temperature in the array; Step 5: evaluating the endurance performance in the array; and Step 6: changing the array parameters according to the evaluation result to improve the endurance performance. According to the method of the present invention, based on the thermal transmission mode in the 3D integrated resistive switching device, a suitable 3D integrated array is selected to analyze the influence of the integration degree on the device temperature so as to evaluate and improve the endurance of the 3D integrated resistive switching device. | 2019-01-03 |
20190006585 | DIFFUSED RESISTIVE MEMORY CELL WITH BURIED ACTIVE ZONE - An apparatus for non-volatile memory, and more specifically a ReRAM device with a buried resistive memory cell. The memory cell includes a first contact disposed on a substrate, an active layer, a second contact, a first diffused zone disposed within the active layer, a second diffused zone disposed within the active layer, and an active switching zone disposed within the active layer in between the first diffused zone and the second diffused zone. In one embodiment, the active zone may be doped by diffusion or ion implantation and/or may be fabricated utilizing a self-aligned process. In another embodiment, the memory cell may combine a deep implant and shallow diffusion well to create the active zone. The vertically and laterally isolated buried resistive memory cell concentrates the electric field away from the edges of the device and eliminates the effects of interface impurities and contaminants. | 2019-01-03 |
20190006586 | CHALCOGENIDE FILMS FOR SELECTOR DEVICES - Methods are provided for depositing doped chalcogenide films. In some embodiments the films are deposited by vapor deposition, such as by atomic layer deposition (ALD). In some embodiments a doped GeSe film is formed. The chalcogenide film may be doped with carbon, nitrogen, sulfur, silicon, or a metal such as Ti, Sn, Ta, W, Mo, Al, Zn, In, Ga, Bi, Sb, As, V or B. In some embodiments the doped chalcogenide film may be used as the phase-change material in a selector device. | 2019-01-03 |
20190006587 | APPARATUS AND TECHNIQUES FOR ANISOTROPIC SUBSTRATE ETCHING - A method may include generating a plasma in a plasma chamber, the plasma comprising an etchant species and extracting a pulsed ion beam from the plasma chamber and directing the pulsed ion beam to a substrate, where the pulsed ion beam comprises an ON portion and an OFF portion. During the OFF portion the substrate may not be biased with respect to the plasma chamber, and the duration of the OFF portion may be less than a transit time of the etchant species from the plasma chamber to the substrate. | 2019-01-03 |
20190006588 | METHOD FOR THE MANUFACTURE OF A CORRELATED ELECTRON MATERIAL DEVICE - Disclosed is a method for the manufacture of a CEM device comprising forming a thin film of a correlated electron material having a predetermined electrical impedance when the CEM device in its relatively conductive (low impedance) state, wherein the forming of the CEM thin film comprises forming a d- or f-block metal or metal compound doped by a physical or chemical vapour deposition with a predetermined amount of a dopant comprising a back-donating ligand for the metal. | 2019-01-03 |
20190006589 | Electron Injection Layer for an Organic Light-Emitting Diode (OLED) - The invention relates to Organic light emitting diode comprising at least one emission layer, an electron injection layer and at least one cathode electrode, wherein:
| 2019-01-03 |
20190006590 | ORGANIC LIGHT EMITTING DEVICE - The present disclosure provides an organic light emitting device having improved driving voltage, efficiency and life time. | 2019-01-03 |
20190006591 | COMPOUND, MATERIAL FOR ORGANIC ELECTROLUMINESCENCE ELEMENTS, ORGANIC ELECTROLUMINESCENCE ELEMENT, AND ELECTRONIC DEVICE - A compound represented by formula (1): | 2019-01-03 |
20190006592 | NOVEL ORGANIC COMPOUND AND ORGANIC ELECTROLUMINESCENT ELEMENT COMPRISING SAME - The present invention relates to an organic light-emitting diode (OLED) including a novel organic compound used in a light emitting layer thereof. Particularly, the present invention relates to an OLED including a novel pyrene-based organic compound. | 2019-01-03 |
20190006593 | METHOD FOR STRETCHING SUB MASK, MASK, AND PANEL - The present disclosure relates to the field of display technology, in particular, to a method for stretching a sub mask, a mask, and a panel. In the present disclosure, the stretcher holds the holding regions positioned at four corners of the sub mask to be stretched, and stretches the sub mask with a first tension along a direction having a first angle with respect to an extending direction of a long side of the sub mask in a plane where the sub mask is located. | 2019-01-03 |
20190006594 | MATERIAL PROPERTY TESTING DEVICE AND MANUFACTURING METHOD FOR THE SAME - A material property testing device and a manufacturing method are disclosed. The device includes: a substrate; a metal gate electrode; an auxiliary layer disposed on the metal gate electrode, and the metal gate electrode is located between the substrate and the auxiliary layer; a function layer disposed on the substrate. In the formation process of the function layer, an organic photoresist is attached on the auxiliary layer for a period of time, and the function layer is used for cooperating with a light-emitting device to test the property of the material. A film of the organic photoresist being disposed is even such that after exposing and developing, the function layer having an ideal pattern is obtained so as to ensure the testing effect of the material property testing device. | 2019-01-03 |
20190006595 | Apparatus and Method for Detecting Presence of Attenuation in OLED Device - An apparatus and a method for detecting presence of attenuation in the OLED device are provided. The apparatus for detecting presence of attenuation in the OLED device includes: a difference function construction circuit, an integrating circuit, a comparing circuit and a determining circuit. The method for detecting presence of attenuation in the OLED device includes: constructing a first light brightness difference function and a second light brightness difference function before and after aging, integrating the first function and the second function, comparing two integrals, and determining whether or not intrinsic attenuation is present in a light emitting material of a light emitting layer in the OLED device. The apparatus for detecting presence of attenuation in the OLED device is configured for executing the method for detecting presence of attenuation in the OLED device. | 2019-01-03 |
20190006596 | ORGANIC ELECTROLUMINESCENT DEVICE - A material for an organic electroluminescent device that is excellent in hole injection and transport abilities, electron blocking ability, stability in a thin film state, and durability is provided as a material for an organic electroluminescent device having high efficiency and high durability. Further, an organic electroluminescent device having low driving voltage, high efficiency, and a long lifetime is provided by combining the material with various materials for an organic EL device that is excellent in hole and electron injection and transport abilities, electron blocking ability, thin film stability, and durability, in such a manner that the characteristics of the materials can be effectively exhibited. An organic electroluminescent device comprising at least an anode, a hole transport layer, a light emitting layer, an electron transport layer, and a cathode in this order, wherein the hole transport layer comprises an arylamine compound of the following general formula (1): | 2019-01-03 |
20190006597 | Compound for organic electronic element, organic electronic element using the same, and an electronic device - Provided is an organic electronic element comprising a hole transport layer containing a compound of Formula (1) and an emitting auxiliary layer containing a compound of Formula (2), capable of improving the light emitting efficiency, stability, and life span of an electronic device using the same. | 2019-01-03 |
20190006598 | NOVEL COMPOUND, MATERIAL FOR ORGANIC ELECTROLUMINESCENCE DEVICE, AND ORGANIC ELECTROLUMINESCENCE DEVICE - A compound represented by the following formula (1): | 2019-01-03 |
20190006599 | ORGANIC SEMICONDUCTING MATERIAL AND USE THEREOF IN ORGANIC DEVICES - A compound of a formula EWG1-(T1) | 2019-01-03 |
20190006600 | ORGANIC MOLECULES, IN PARTICULAR FOR USE IN OPTOELECTRONIC DEVICES - The invention relates to an organic molecule, in particular for use in optoelectronic devices. According to the invention, the organic molecule consists of
| 2019-01-03 |
20190006601 | NITROGEN-CONTAINING HETEROCYCLIC COMPOUNDS AND ORGANIC ELECTROLUMINESCENCE DEVICES CONTAINING THEM - The present invention relates to compounds of the general formula (11), to a material for an organic electroluminescence device comprising of least one of these compounds, to an organic electroluminescence device comprising at least one of these compounds, and to the use of a compound according to general formula (11) in an organic electroluminescence device as a host material or an electron transporting material. | 2019-01-03 |
20190006602 | ORGANIC LIGHT EMITTING ELEMENT - The present specification relates to an organic light emitting device including: an anode; a cathode disposed to face the anode; and a light emitting layer disposed between the anode and the cathode, in which the light emitting layer includes: a host including a P-type host and an N-type host, which produce an exciplex; and a phosphorescent dopant, and the host including the P-type host and the N-type host, which produce an exciplex, emits a photoluminescence light with a longer wavelength than a wavelength of each of the P-type host and the N-type host. | 2019-01-03 |
20190006603 | COMPOSITION FOR MANUFACTURING ORGANIC SEMICONDUCTOR DEVICE - There is provided a composition being excellent in the dissolvability of an organic semiconductor material and being capable of forming an organic semiconductor device having a high carrier mobility by using a printing method under a low-temperature environment. The composition for producing an organic semiconductor device according to the present invention comprises an organic semiconductor material and solvent (A). The organic semiconductor material is an N-shaped fused-ring n-conjugated molecule; and solvent (A) is a compound represented by formula (a). In the formula, L represents a single bond, —O—, —NH—C(═O)—NH—, —C(═O)—, or —C(═S)—; k represents an integer of 0 to 2; R | 2019-01-03 |
20190006604 | LASER PRINTABLE ORGANIC SEMICONDUCTOR COMPOSITIONS AND APPLICATIONS THEREOF - Organic semiconductor compositions (OSCs) compatible with laser printing techniques are described herein. In being compatible with laser printing techniques, the OSCs are in particulate form and generally comprise an organic semiconductor component and carrier. The organic semiconductor component can comprise any small molecule semiconductor or polymeric semiconductor not inconsistent with the laser printing methods. | 2019-01-03 |
20190006605 | GERMANANE ANALOGS AND OPTOELECTRONIC DEVICES USING THE SAME - The present invention provides novel two-dimensional van der Waals materials and stacks of those materials. Also provided are methods of making and using such materials. | 2019-01-03 |
20190006606 | COMPOSITION OF MATTER FOR USE IN ORGANIC LIGHT-EMITTING DIODES - The present disclosure relates to compounds of Formula (I) | 2019-01-03 |
20190006607 | QUANTUM DOT MATERIAL, PREPARATION METHOD, AND SEMICONDUCTOR DEVICE - The present invention provides a QD material, a preparation method, and a semiconductor device. The QD material includes at least one QD structural unit arranged sequentially along a radial direction of the QD material. Each QD structural unit has a gradient alloy composition structure with a changing energy level width along the radial direction or a homogeneous alloy composition structure with a constant energy level width along the radial direction. The disclosed QD material not only achieves higher light-emission efficiency of QD material, but also meets the comprehensive requirements of semiconductor devices and the corresponding display technologies on QD materials. Therefore, the disclosed QD material is a desired QD light-emitting material suitable for semiconductor devices and display technologies. | 2019-01-03 |
20190006608 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including a first electrode, a second electrode facing the first electrode, and an organic layer disposed between the first electrode and the second electrode, wherein the organic layer includes an emission layer and an intermediate layer disposed between the first electrode and the emission layer, wherein the intermediate layer directly contacts the emission layer, and wherein the intermediate layer includes a first hole transport material, wherein the emission layer includes a host and a dopant, wherein the dopant is an organometallic compound, provided that the dopant does not comprise iridium, and wherein the organic light-emitting device satisfies certain parameters described in the specification. | 2019-01-03 |
20190006609 | ORGANIC FUNCTIONAL COMPOUND FOR PREPARING ORGANIC ELECTRONIC DEVICE AND APPLICATION THEREOF - The present invention discloses an organic functional compound for preparing an organic electronic device and an application thereof. The organic functional compound has a general formula (I). The organic functional compound comprises an organic functional group and a solubilizing group, thereby imparting a good solubility and film-forming ability. The organic functional compound also excels in maintaining the performance of the functional group in a device. The organic functional compound and a composition or mixture comprising the organic functional compound have a good printability and film-forming ability, facilitating solution-processing, particularly in printing techniques, and obtaining a high-performance small-molecule organic electronic device, particularly an organic electroluminescent device. | 2019-01-03 |
20190006610 | WHITE LIGHT ORGANIC LIGHT-EMITTING DIODE (OLED) AND THE DISPLAY PANEL THEREOF - The present disclosure relates to a white light OLED and a display panel. The OLED includes a first electrode, a first hole injection layer, a first hole transport layer, a first luminous layer, a first electron transport layer, a charge generation layer, a second hole injection layer, a second hole transport layer, an electron blocking layer, a second luminous layer, a third luminous layer, a second electron transport layer, and a second electrode stacked in sequence. The first luminous layer is a blue luminous layer, the second luminous layer is a blue luminous layer, and the third luminous layer is a yellow luminous layer. With such configuration, the color shift and the power consumption issue caused by insufficient blue light may be effectively overcome. | 2019-01-03 |
20190006611 | Process for Making a Metal Containiner Layer - Process for preparing a metal containing layer, the process comprising (i) at least one step of co-vaporization, at a pressure which is lower than 10 | 2019-01-03 |
20190006612 | ORGANIC LIGHT-EMITTING DIODE STRUCTURE - Disclosed is an organic light-emitting diode structure which includes a substrate, an optically-modified layer, a planarization layer, a pixel definition layer, and an organic light-emitting layer. The optically-modified layer can improve non-uniform luminance of OLEDs manufactured based on the ink-jet printing technology. | 2019-01-03 |
20190006613 | ORGANIC LIGHT EMITTING DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - Provided is an organic light emitting display panel including a transistor layer, first and second insulation film pattern, an anode electrode, an emission unit, and a cathode electrode. The transistor layer is disposed on a substrate. The first insulation film pattern is disposed at each pixel and disposed on an inter-layer insulation film covering the transistor layer. The second insulation film pattern has an area larger than an area of the first insulation film pattern and covers the first insulation film pattern. The anode electrode covers the second insulation film pattern and is provided with an edge having a round-shaped cross section. The emission unit covers the anode electrode and a cathode electrode is disposed on the emission unit. | 2019-01-03 |
20190006614 | TRANSPARENT ORGANIC ELECTROLUMINESCENCE ELEMENT - An object of the present invention is to provide a transparent organic electroluminescence element in which durability is excellent, a transparent lead-out electrode of low resistance is provided, and there is no uncomfortable feeling in visibility of the entire element. The transparent organic electroluminescence element according to the present invention is a transparent organic electroluminescence element including: at least an organic electroluminescence element portion and a lead-out electrode portion, in which two-sided light emission is capable of being performed, wherein a total light transmittance (%) of the lead-out electrode portion in a visible light range is in a range of 90% to 110%, with respect to a total light transmittance (%) of the organic electroluminescence element portion in a visible light range at the time of non-light emission. | 2019-01-03 |
20190006615 | DISPLAY DEVICE - Provided is a display device, comprising a display panel which comprises a first area and a second area located around the first area; and an under-panel sheet which is located under the display panel and overlaps the first area and the second area, wherein the under-panel sheet comprises a buffer member and a strength reinforcing member, wherein the strength reinforcing member is thinner than the buffer member, and a ratio of a thickness of the buffer member to a thickness of the strength reinforcing member is 3 to 6 times. | 2019-01-03 |
20190006616 | DISPLAY DEVICE - A display device includes a flexible substrate including a first region including a display region, a second region including a curved region, and a third region including a terminal region; an electro-optical element located in the display region; and a resin layer continuously extending from the first region to the third region. | 2019-01-03 |
20190006617 | DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE - A display device includes a display region, an organic insulating layer, a display element, and a moisture-ingress barrier. The organic insulating layer has a groove outside the display region. The organic insulating layer extends over the display region and a region outside the groove. The display element is disposed in the display region and includes, in order, a first electrode, an organic layer, and a second electrode. The organic layer includes one or more moisture-reacting layers. The moisture-ingress barrier is disposed in the groove of the organic insulating layer, includes a material identical to the material of the one or more moisture-reacting layers, and has a thickness greater than the thickness of the one or more moisture-reacting layers. | 2019-01-03 |
20190006618 | ORGANIC EL DISPLAY DEVICE AND METHOD FOR PRODUCING SAME - An organic EL display device includes a base substrate, an organic EL element (provided on the base substrate and including a plurality of organic EL layers arranged in a matrix form, a sealing film provided on the organic EL element, and a plurality of sub pixels defined corresponding to the plurality of organic EL layers. The sealing film is provided with a groove formed to run between adjacent ones of the plurality of sub pixels. | 2019-01-03 |
20190006619 | BENDABLE ELECTRONIC DEVICE MODULES, ARTICLES AND METHODS OF MAKING THE SAME - A foldable electronic device module includes a glass cover element having a thickness from about 25 μm to about 200 μm, an elastic modulus from about 20 GPa to about 140 GPa and a puncture resistance of at least 1.5 kgf. The module further includes a stack with a thickness between about 100 μm and about 600 μm; and a first adhesive joining the stack to the cover element with a shear modulus between about 1 MPa and about 1 GPa. The stack further includes a panel, an electronic device, and a stack element affixed to the panel with a stack adhesive. Further, the device module is characterized by a tangential stress at a primary surface of the cover element of no greater than about 1000 MPa in tension upon bending the module to a radius from about 20 mm to about 2 mm. | 2019-01-03 |
20190006620 | APPARATUS, METHOD OF MANUFACTURING DISPLAY APPARATUS, AND PROTECTIVE FILM - An apparatus includes a substrate; a display panel on the substrate; and a protective film protecting one of the substrate and the display panel, wherein the protective film includes a first protective film and a second protective film, wherein the first protective film is disposed closer to the display panel than the second protective film, and wherein the first protective film includes a polymerizable compound having an adhesive strength that changes with energy irradiated onto the polymerizable compound. | 2019-01-03 |
20190006621 | DISPLAY DEVICE - A display device may include a lower electrode; an electroluminescence layer on the lower electrode; an upper electrode on the electroluminescence layer; a cap layer on the upper electrode for improving light extraction efficiency; an absorbent layer on the cap layer, the absorbent layer extending from above and laterally next to the cap layer; and a sealing film on the absorbent layer. | 2019-01-03 |
20190006622 | ORGANIC ELECTRONIC DEVICE USING ADHESIVE FILM ENCAPSULATION TECHNOLOGY, AND METHOD OF MANUFACTURING SAME - This organic electronic device using an adhesive film encapsulation technology includes: a substrate; an electrode layer formed of a transparent conductive material on the top surface of the substrate; an active region layer which is an active layer that induces the flow of holes or electrons in a portion of the electrode layer; a counter electrode formed of a conductive material on the top surface of the electrode layer and the active region layer; an adhesive film attached to cover a region including the active region layer; and a cover material disposed at a certain distance vertically upward and apart from the adhesive film, and sealing the space between counter electrodes by using an encapsulating material along both edges thereof, wherein a gap is formed between the adhesive film and the cover material. | 2019-01-03 |
20190006623 | COMPOSITE LAMINATE AND METHOD FOR STORING RESIN LAYER - A composite layered body including: a resin layer and a first composite layer, the resin layer containing particles of which a weight change ratio when they are left to stand at 20° C. and 90% Rh for 24 hours is 3% or more, wherein the first composite layer includes a first release layer and a first gas barrier layered body in this order from a side of the resin layer side, and the first gas barrier layered body includes a first substrate layer and a first inorganic layer disposed on at least one surface of the first substrate layer. | 2019-01-03 |