| 01st week of 2013 patent applcation highlights part 16 |
| Patent application number | Title | Published |
|---|
| 20130001505 | MULTILAYER STRUCTURE COMPRISING A PHASE CHANGE MATERIAL LAYER AND METHOD OF PRODUCING THE SAME - A method of producing a multilayer structure is provided, wherein the method comprises forming a phase change material layer onto a substrate, forming a protective layer, forming a further layer on the protective layer, patterning the further layer in an first patterning step, patterning the protective layer and the phase change material layer by a second patterning step. In particular, the first patterning step may be an etching step using chemical etchants. Moreover, electrodes may be formed on the substrate before the phase change material layer is formed, e.g. the electrodes may be formed on one level, e.g. may form a planar structure and may not form a vertically structure. | 2013-01-03 |
| 20130001506 | RESISTANCE CHANGE MEMORY AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a resistance change memory includes resistance change elements, vias and sidewall insulating layers, the elements and the vias provided alternately in a first direction and a second direction orthogonal to the first direction, and the sidewall insulating layers provided on sidewalls of the elements. The elements are provided in a lattice pattern having a constant pitch. A thickness of each of the sidewall insulating layers in a direction orthogonal to the sidewalls is a value for contacting the sidewall insulating layers each other or more to form holes between the sidewall insulating layers. The vias are provided in the holes respectively. | 2013-01-03 |
| 20130001507 | SEMICONDUCTOR DEVICE AND METHOD - A semiconductor device and a method of manufacturing the device is disclosed. In one aspect, a method includes providing a substrate, providing a first epitaxial semiconducting layer on top of the substrate, and forming a one- or two-dimensional repetitive pattern, each part of the pattern having an aspect ratio in the range of about 0.1 to 50. | 2013-01-03 |
| 20130001508 | LIGHT EMITTING DIODE - An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided. | 2013-01-03 |
| 20130001509 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME - A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer. | 2013-01-03 |
| 20130001510 | OPTOELECTRONIC DEVICE HAVING CURRENT BLOCKING INSULATION LAYER FOR UNIFORM TEMPERATURE DISTRIBUTION AND METHOD OF FABRICATION - An optoelectronic device includes a conductive base, a reflective conductive layer on the conductive base, a first semiconductor layer on the conductive layer configured as a first confinement layer, an active layer on the first semiconductor layer configured to emit electromagnetic radiation, a second semiconductor layer on the active layer configured as a second confinement layer, an electrode on the second semiconductor layer, and a current blocking structure on the reflective conductive layer comprising a thin transparent insulation layer aligned with the electrode configured to block current flow from the electrode, to dissipate heat generated at an interface between the first semiconductor layer and the reflective conductive layer, and to transmit electromagnetic radiation reflected from the reflective conductive layer, | 2013-01-03 |
| 20130001511 | Elevated LED - The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light. | 2013-01-03 |
| 20130001512 | NITRIDE GROUP SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING MULTIQUANTUM WELL STRUCTURE - A nitride group semiconductor light emitting device includes a substrate, n-type and p-type semiconductor layers, and an active region. The n-type and p-type semiconductor layers are formed on or above the substrate. The active region is interposed between the n-type and p-type semiconductor layers. The active region includes barrier layers that are included in a multiquantum well structure, and an end barrier layer that has a thickness greater than the barrier layer, and is arranged closest to the p-type semiconductor layer. The average thickness of the last two barrier layers that are arranged adjacent to the end barrier layer is smaller than the average thickness of the other barrier layers among the thicknesses of the barrier layers that are included in the multiquantum well structure. | 2013-01-03 |
| 20130001513 | NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR - A nitride-based semiconductor device includes: a semiconductor multilayer structure | 2013-01-03 |
| 20130001514 | Method and Apparatus for Converting Photon Energy to Electrical Energy - In accordance with an example embodiment of the present invention, an apparatus including a nanopillar and a graphene film, the graphene film being in contact with a first end of the nanopillar, wherein the nanopillar includes a metal, the contact being configured to form an intrinsic field region in the graphene film, and wherein the apparatus is configured to generate a photocurrent from a photogenerated charge carrier in the intrinsic field region. | 2013-01-03 |
| 20130001515 | DIRECT GROWTH OF GRAPHENE ON SUBSTRATES - Graphene layers can be formed on a dielectric substrate using a process that includes forming a copper thin film on a dielectric substrate; diffusing carbon atoms through the copper thin film; and forming a graphene layer at an interface between the copper thin film and the dielectric substrate. | 2013-01-03 |
| 20130001516 | GRAPHITE AND/OR GRAPHENE SEMICONDUCTOR DEVICES - Various embodiments are provided for graphite and/or graphene based semiconductor devices. In one embodiment, a semiconductor device includes a semiconductor layer and a semimetal stack. In another embodiment, the semiconductor device includes a semiconductor layer and a zero gap semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the semiconductor layer, which forms a Schottky barrier. In another embodiment, a semiconductor device includes first and second semiconductor layers and a semimetal stack. In another embodiment, a semiconductor device includes first and second semiconductor layers and a zero gap semiconductor layer. The first semiconductor layer includes a first semiconducting material and the second semi conductor layer includes a second semiconducting material formed on the first semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the second semiconductor layer, which forms a Schottky barrier. | 2013-01-03 |
| 20130001517 | GENERATION OF MULTIPLE DIAMETER NANOWIRE FIELD EFFECT TRANSISTORS - A method of modifying a wafer having a semiconductor disposed on an insulator is provided and includes forming pairs of semiconductor pads connected via respective nanowire channels at each of first and second regions with different initial semiconductor thicknesses and reshaping the nanowire channels into nanowires to each have a respective differing thickness reflective of the different initial semiconductor thicknesses. | 2013-01-03 |
| 20130001518 | FABRICATION OF GRAPHENE NANOELECTRONIC DEVICES ON SOI STRUCTURES - A semiconductor-on-insulator structure and a method of forming the silicon-on-insulator structure including an integrated graphene layer are disclosed. In an embodiment, the method comprises processing a silicon material to form a buried oxide layer within the silicon material, a silicon substrate below the buried oxide, and a silicon-on-insulator layer on the buried oxide. A graphene layer is transferred onto the silicon-on-insulator layer. Source and drain regions are formed in the silicon-on-insulator layer, and a gate is formed above the graphene. In one embodiment, the processing includes growing a respective oxide layer on each of first and second silicon sections, and joining these silicon sections together via the oxide layers to form the silicon material. The processing, in an embodiment, further includes removing a portion of the first silicon section, leaving a residual silicon layer on the bonded oxide, and the graphene layer is positioned on this residual silicon layer. | 2013-01-03 |
| 20130001519 | GRAPHENE DEVICES WITH LOCAL DUAL GATES - An electronic device comprises an insulator, a local first gate embedded in the insulator with a top surface of the first gate being substantially coplanar with a surface of the insulator, a first dielectric layer formed over the first gate and insulator, and a channel. The channel comprises a bilayer graphene layer formed on the first dielectric layer. The first dielectric layer provides a substantially flat surface on which the channel is formed. A second dielectric layer formed over the bilayer graphene layer and a local second gate formed over the second dielectric layer. Each of the local first and second gates is capacitively coupled to the channel of the bilayer graphene layer. The local first and second gates form a first pair of gates to locally control a first portion of the bilayer graphene layer. | 2013-01-03 |
| 20130001520 | PHOTODETECTORS AND PHOTOVOLTAICS BASED ON SEMICONDUCTOR NANOCRYSTALS - A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons. | 2013-01-03 |
| 20130001521 | APPLICATION OF TRIPHENYLENE DERIVATIVES IN ORGANIC ELECTROLUMINESCENT DEVICES - Triphenylene derivatives having a structure of formula (1) are provided. Ar represents an aromatic compound, n is 1 to 3, and each of R and R | 2013-01-03 |
| 20130001522 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A heterocyclic compound represented by Formula 1 below and an organic light-emitting device including the same: | 2013-01-03 |
| 20130001523 | ORGANIC LIGHT-EMITTING DIODE AND FLAT DISPLAY DEVICE INCLUDING THE SAME - An organic light-emitting diode includes: a substrate; a first electrode; a second electrode; an emission layer between the first electrode and the second electrode; and a hole blocking layer between the emission layer and the second electrode. The hole blocking layer includes a first layer including a first material and a second material, and a second layer formed on the first layer and including the first material. The first material includes a hole blocking material having a highest occupied molecular orbital (HOMO) energy level in the range of about 5.5 to about 6.9 eV, and the second material includes a green or red phosphorescent host material. | 2013-01-03 |
| 20130001524 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE COMPRISING THE SAME - A heterocyclic compound represented by Formula 1 below and an organic light-emitting device including an organic layer that includes the following heterocyclic compound: | 2013-01-03 |
| 20130001525 | THIN FILM TRANSISTOR AND PRESS SENSING DEVICE USING THE SAME - A thin film transistor controlled by a pressure includes a source electrode, a drain electrode, a semiconductor layer, a gate electrode, and an insulative layer. The drain electrode is spaced from the source electrode. The semiconductor layer includes a polymer composite layer and is electrically connected with the source electrode and the drain electrode. The polymer composite includes a polymer substrate and a plurality of carbon nanotubes dispersed in the polymer substrate. An elastic modulus of the polymer substrate is ranged from about 0.1 MPa to about 10 MPa. The gate electrode is electrically insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulative layer. A press sensing device using the above-mentioned thin film transistor is also provided. | 2013-01-03 |
| 20130001526 | ORGANIC LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A highly efficient organic light emitting diode having simple manufacturing processes, and a method of manufacturing the same. | 2013-01-03 |
| 20130001527 | HETEROCYCLIC COMPOUND, ORGANIC LIGHT-EMITTING DIODE INCLUDING THE HETEROCYCLIC COMPOUND, AND FLAT DISPLAY DEVICE INCLUDING THE ORGANIC LIGHT-EMITTING DIODE - Provided are a heterocyclic compound represented by Formula 1 below, and an organic light-emitting diode and a flat display device each including the heterocyclic compound. | 2013-01-03 |
| 20130001528 | Organic Light-Emitting Diode - An organic light-emitting diode (OLED) having first, second and third sub-pixels of different colors includes: a substrate; first and second electrodes; an organic emission layer (OEL) between the electrodes including a first OEL in the first sub-pixel, a second OEL in the second sub-pixel, and a common third OEL in the first, second and third sub-pixels; a hole transport layer (HTL) between the first electrode and OEL; a hole injection layer (HIL) between the first electrode and HTL; an intermediate layer between the HTL and HIL; a first optical thickness auxiliary layer (OTAL) between the first OEL and third OEL in the first sub-pixel and including a first hole transporting compound and a cyano group-containing compound; and a second OTAL including a second hole transporting compound between the third OEL and HTL in the first sub-pixel, and between the second OEL and HTL in the second sub-pixel. | 2013-01-03 |
| 20130001529 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A heterocyclic compound represented by Formula 1 below and an organic light-emitting device including the heterocyclic compound: | 2013-01-03 |
| 20130001530 | ORGANIC LIGHT EMITTING DISPLAY DEVICES AND METHODS OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICES - An organic light emitting display device comprising a first electrode; a hole transport layer, an emitting layer and an electron transport layer disposed sequentially on the first electrode; and a second electrode formed on the electron transport layer, wherein the emitting layer comprises a host material comprising a calixarene compound represented by Chemical Formula (1) | 2013-01-03 |
| 20130001531 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - In one aspect, an organic light-emitting display apparatus is provided including a first sub-pixel, a second sub-pixel, and a third sub-pixel that are each a different color, the apparatus including: a substrate; a first electrode disposed on the substrate; a second electrode disposed on the first electrode so as to face the first electrode; an organic emission layer disposed between the first electrode and the second electrode and comprising a first organic emission layer, a second organic emission layer, and a third organic emission layer; a hole transport layer disposed between the first electrode and the organic emission layer; and an electron accepting layer disposed between the first electrode and the second electrode. The organic light-emitting display apparatus has improved image quality and lifetime. | 2013-01-03 |
| 20130001532 | ORGANIC LIGHT EMITTING DIODE - A full color organic light emitting diode having high efficiency and high color purity while having low manufacturing costs due to simple manufacturing processes. | 2013-01-03 |
| 20130001533 | ORGANIC LIGHT EMITTING DISPLAY DEVICES AND METHODS OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICES - An organic light emitting display device is provided. Thin film transistors may be located on a substrate. An insulating interlayer having a first contact hole to a third contact hole may be disposed on the substrate. First electrodes electrically connecting the thin film transistors may be located on the insulating interlayer and sidewalls of the first to the third contact holes. A pixel defining layer may be disposed on the insulating interlayer, portions of the first electrodes and the sidewalls of the first to the third contact holes. Light emitting structures may be disposed on the first electrodes in pixel regions. A second electrode may be located on the light emitting structures. Planarization patterns may be disposed on the pixel defining layer to fill the first and the second contact holes. A spacer may be disposed on the pixel defining layer to fill the third contact hole. | 2013-01-03 |
| 20130001534 | LUMINESCENT COMPOSITION AND LIGHT-EMITTING ELEMENT USING SAID COMPOSITION - A luminescent composition comprising a luminescent organic compound and a conjugated polymer compound having a luminescence maximum further toward the short wavelength end than the luminescence maximum of the luminescent organic compound at 350 nm to 500 nm, and satisfying the following formula (1); | 2013-01-03 |
| 20130001535 | LIGHT-EMITTING ORGANIC PLATINUM COMPLEX, LIGHT-EMITTING MATERIAL CONTAINING THIS COMPLEX AND FUNCTIONAL DEVICE - The present invention provides a light-emitting organic platinum complex, a light-emitting material containing this complex, and a functional device containing this complex. The light-emitting organic platinum complex is represented by any one of the following structural formulae: | 2013-01-03 |
| 20130001536 | NOVEL BENZOXAZOLYL CARBAZOLE COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A novel organic compound which can be preferably used as a phosphorescent host material is provided. A benzoxazolyl carbazole compound represented by the general formula [1] shown in the specification is provided. | 2013-01-03 |
| 20130001537 | NOVEL ORGANIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE HAVING THE SAME - The present invention provides a novel organic compound that is chemically stable and can be used as a host material for phosphorescence emission. | 2013-01-03 |
| 20130001538 | Triphenylene Hosts in Phosphorescent Light Emitting Diodes - An organic emissive layer is provided. Also provided is a device in which the organic emissive layer is disposed between an anode and a cathode. The organic emissive layer includes a phosphorescent material and triphenylene compound or a compound having a repeat unit having a triphenylene moiety. The triphenylene is optionally substituted. The substituents may be the same or different and each is selected from the group consisting of alkyl, aryl, fused aryl, substituted aryl, alkenyl, alkynyl, and heteroalkyl. Triphenylene compounds are also provided. | 2013-01-03 |
| 20130001539 | ELECTROACTIVE MATERIALS - There is provided an electroactive material having Formula I | 2013-01-03 |
| 20130001540 | COMPOUND INCLUDING INDOLE DERIVATIVE IN WHICH TWO TERTIARY AMINES ARE SUBSTITUTED, ORGANIC ELECTRONIC ELEMENT USING SAME, AND TERMINAL THEREOF - Disclosed are a compound including an indole derivative in which two tertiary amines are substituted, an organic electronic element using the same, and a terminal thereof. | 2013-01-03 |
| 20130001541 | ORGANIC ELECTROLUMINESCENCE DEVICE AND METHOD FOR PRODUCING THE SAME - An organic electroluminescence device including an anode, a cathode, an organic layer disposed between the anode and the cathode, the organic layer containing a hole injection layer, a hole transport layer and an emission layer containing a host material, wherein the hole injection layer, the hole transport layer and the emission layer each contain a phosphorescent light-emitting material, wherein the hole injection layer contains the phosphorescent light-emitting material in an amount of 10% by mass or more but less than 50% by mass, and wherein a concentration of the phosphorescent light-emitting material contained in the hole transport layer is lower than that in the hole injection layer, and a concentration of the phosphorescent light-emitting material contained in the emission layer is lower than that in the hole injection layer and higher than that in the hole transport layer. | 2013-01-03 |
| 20130001542 | ORGANIC LIGHT-EMITTING DEVICE - Aspects of the present invention provide a blue organic light-emitting device having a continuous operation lifetime. | 2013-01-03 |
| 20130001543 | NOVEL ORGANIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE HAVING THE SAME - Provided are a novel organic compound suitable for emitting green light and an organic light-emitting device including the compound. The organic compound is that shown in claim 1. The organic compound shown in claim 1 has substituents that are each independently selected from the group consisting of hydrogen atoms, halogen atoms, optionally substituted alkyl groups, optionally substituted alkoxy groups, substituted amino groups, optionally substituted aryl groups, and optionally substituted heterocyclic groups. | 2013-01-03 |
| 20130001544 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A more convenient and highly reliable semiconductor device which has a transistor including an oxide semiconductor with higher impact resistance used for a variety of applications is provided. A semiconductor device has a bottom-gate transistor including a gate electrode layer, a gate insulating layer, and an oxide semiconductor layer over a substrate, an insulating layer over the transistor, and a conductive layer over the insulating layer. The insulating layer covers the oxide semiconductor layer and is in contact with the gate insulating layer. In a channel width direction of the oxide semiconductor layer, end portions of the gate insulating layer and the insulating layer are aligned with each other over the gate electrode layer, and the conductive layer covers a channel formation region of the oxide semiconductor layer and the end portions of the gate insulating layer and the insulating layer and is in contact with the gate electrode layer. | 2013-01-03 |
| 20130001545 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor is formed over the oxide semiconductor layer, whereby field effect mobility of the thin film transistor can be increased. Further, by forming a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor between the oxide semiconductor layer and a protective insulating layer of the thin film transistor, change in composition or deterioration in film quality of the oxide semiconductor layer is prevented, so that electrical characteristics of the thin film transistor can be stabilized. | 2013-01-03 |
| 20130001546 | DISPLAY DEVICE AND METHOD FOR PRODUCING ARRAY SUBSTRATE FOR DISPLAY DEVICE - A display device includes: a plurality of stripe-shaped data electrodes that are formed on a first substrate and that extend in the column direction; a plurality of scanning lines and a plurality of reference signal lines that are formed on a second substrate and that extend in the row direction; a plurality of pixel electrodes that are formed on the second substrate and that are disposed in a matrix arrangement; a plurality of switching elements that are formed on the second substrate and in which on/off is controlled by the plurality of scanning lines, and that are disposed between the plurality of reference signal lines and the plurality of pixel electrodes; and an oxide semiconductor layer that is disposed between a source electrode and a drain electrode. The switching elements are formed so as to be disposed in the vicinity of a gate electrode on the oxide semiconductor layer, with an insulating layer interposed therebetween. The pixel electrodes are provided so as to be connected to the source electrode or the drain electrode. The source electrode or the drain electrode that is connected to the pixel electrode is made from the same material as the pixel electrode. The source electrode and the drain electrode are films formed at the same time. | 2013-01-03 |
| 20130001547 | METHOD FOR VERIFYING THE ALIGNMENT BETWEEN INTEGRATED ELECTRONIC DEVICES - A method includes communicatively coupling first and second integrated electronic devices together through a plurality of reference capacitors, transmitting a plurality of transmission reference signals on transmission reference electrodes of the plurality of reference capacitors, receiving coupling signals on reception reference electrodes of the plurality of reference capacitors, amplifying said coupling signals, generating a plurality of reception reference signals, generating a plurality of reception control signals as a function of the plurality of reception reference signals, and detecting a possible misalignment between said first and second integrated electronic devices based on the plurality of reception control signals. | 2013-01-03 |
| 20130001548 | SEMICONDUCTOR APPARATUS AND STACKED SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a TSV formed to be electrically connected with another chip and a TSV test unit configured to check a capacitance component of the TSV to generate a TSV abnormality signal. | 2013-01-03 |
| 20130001549 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - In a method of manufacturing of a semiconductor device according to an embodiment, an inspection transistor is subjected to silicidation and subsequently a characteristic of the inspection transistor is measured after the inspection transistor and a product transistor on a substrate are subjected to an annealing process. Thereafter, based on the measured characteristic, a characteristic adjustment annealing process to make a characteristic of the product transistor close to a desired characteristic is performed, and then the product transistor is subjected to silicidation. | 2013-01-03 |
| 20130001550 | HERMETICALLY SEALED MEMS DEVICE WITH A PORTION EXPOSED TO THE ENVIRONMENT WITH VERTICALLY INTEGRATED ELECTRONICS - A system and method for providing a MEMS device with integrated electronics are disclosed. The MEMS device comprises an integrated circuit substrate and a MEMS subassembly coupled to the integrated circuit substrate. The integrated circuit substrate includes at least one circuit coupled to at least one fixed electrode. The MEMS subassembly includes at least one standoff formed by a lithographic process, a flexible plate with a top surface and a bottom surface, and a MEMS electrode coupled to the flexible plate and electrically coupled to the at least one standoff. A force acting on the flexible plate causes a change in a gap between the MEMS electrode and the at least one fixed electrode. | 2013-01-03 |
| 20130001551 | PROBE RESISTANCE MEASUREMENT METHOD AND SEMICONDUCTOR DEVICE WITH PADS FOR PROBE RESISTANCE MEASUREMENT - A probe resistance measuring method includes measuring first resistances at three or more nodes by making contact at least a part of a plurality of probes of a probe unit with three or more pads for resistance measurement based on a first correspondence relation. The measured resistances are stored as a first measurement result and contact resistances of the plurality of probes of the probe unit are calculated based on the first measurement result. | 2013-01-03 |
| 20130001552 | TEST PAD STRUCTURE FOR REUSE OF INTERCONNECT LEVEL MASKS - A test pad structure in a back-end-of-line metal interconnect structure is formed by repeated use of the same mask set, which includes a first line level mask, a first via level mask, a second line level mask, and a second via level mask. The test pad structure includes a two-dimensional array of test pads such that a first row is connected to a device macro structure in the same level, and test pads in another row are electrically connected to another device macro structure of the same design at an underlying level. The lateral shifting of electrical connection among pads located at different levels is enabled by lateral extension portions that protrude from pads and via structures that contact the lateral extension portions. This test pad structure includes more levels of testable metal interconnect structure than the number of used lithographic masks. | 2013-01-03 |
| 20130001553 | SEMICONDUCTOR DEVICES HAVING REDUCED SUBSTRATE DAMAGE AND ASSOCIATED METHODS - Optoelectronic devices, materials, and associated methods having increased operating performance are provided. In one aspect, for example, an optoelectronic device can include a semiconductor material, a first doped region in the semiconductor material, a second doped region in the semiconductor material forming a junction with the first doped region, and a laser processed region associated with the junction. The laser processed region is positioned to interact with electromagnetic radiation. Additionally, at least a portion of a region of laser damage from the laser processed region has been removed such that the optoelectronic device has an open circuit voltage of from about 500 mV to about 800 mV. | 2013-01-03 |
| 20130001554 | Method Of Manufacturing Electric Device, Array Of Electric Devices, And Manufacturing Method Therefor - An example embodiment relates to a method of manufacturing an array of electric devices that includes attaching a platform including a micro-channel structure to a substrate. The method includes injecting first and second solutions into the micro-channel structure to form at least three liquid film columns, where the first and second solutions include different solvent composition ratios and the liquid columns each, respectfully, include different solvent composition ratios. The method further includes detaching the platform the substrate, removing solvent from the liquid film columns to form thin film columns, and treating the thin film columns under different conditions along a length direction of the thin film columns. The solvent is removed from the thin film columns and the thin film columns are treated under different conditions along a length direction of the thin film columns. | 2013-01-03 |
| 20130001555 | Semiconductor structure and method for manufacturing the same - The present invention provides a method for manufacturing a semiconductor structure, comprising the steps of: depositing an interlayer dielectric layer ( | 2013-01-03 |
| 20130001556 | THIN FILM TRANSISTOR AND PRESS SENSING DEVICE USING THE SAME - A thin film transistor and a press sensing device using the thin film transistor are disclosed. The thin film transistor, comprises a source electrode; a drain electrode spaced from the source electrode; a semiconductor layer electrically connected with the source electrode and the drain electrode, a channel defined in the semiconductor layer and located between the source electrode and the drain electrode; and a gate electrode electrically insulated from the semiconductor layer; and an insulative layer configured for insulating the source electrode, the drain electrode, and the semiconductor layer from each other, wherein the insulative layer is made of a polymeric material with an elastic modulus ranged from about 0.1 megapascal (MPa) to about 10 MPa. | 2013-01-03 |
| 20130001557 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The invention relates to a semiconductor device including an oxide semiconductor layer, a gate electrode overlapping with a channel formation region of the oxide semiconductor layer, and a source electrode or a drain electrode overlapping with a first region of the oxide semiconductor layer, and a second region between the channel formation region and the first region. An upper layer of the second region includes a microvoid. The microvoid is formed by adding nitrogen to the upper layer of the second region. Thus, upper layer of the second region contains lager amount of nitrogen than a lower layer of the second region. | 2013-01-03 |
| 20130001558 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device includes a gate electrode, a gate insulating film provided so as to cover one surface of the gate electrode, an oxide semiconductor provided so as to overlap the gate insulating film, and a source electrode and a drain electrode, which are provided so as to overlap the oxide semiconductor. The semiconductor device also includes an oxygen-atom-containing film provided between the gate insulating film, and, the source electrode and the drain electrode, so as to be held in contact with the oxide semiconductor. | 2013-01-03 |
| 20130001559 | THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR - A substrate; a gate electrode formed above the substrate; a gate insulating film formed above the gate electrode; a crystalline silicon semiconductor layer formed above the gate insulating film; an amorphous silicon semiconductor layer formed above the crystalline silicon semiconductor layer; an organic protective film made of an organic material and formed above the amorphous silicon semiconductor layer; and a source electrode and a drain electrode formed above the amorphous silicon semiconductor layer interposing the organic protective film are included, and a charge density of the negative carriers in the amorphous silicon semiconductor layer is at least 3×10 | 2013-01-03 |
| 20130001560 | SUBSTRATE HAVING FILM PATTERN AND MANUFACTURING METHOD OF THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, LIQUID CRYSTAL TELEVISION, AND EL TELEVISION - The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput and yield. According to the invention, after forming a first protective film which has low wettability on a substrate, a material which has high wettability is applied or discharged on an outer edge of a first mask pattern, thereby a film pattern and a substrate having the film pattern are formed. | 2013-01-03 |
| 20130001561 | Semiconductor Device and Method of Manufacturing Same - A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit. | 2013-01-03 |
| 20130001562 | Organic light emitting display apparatus and method of manufacturing the same - An organic light emitting display apparatus includes a substrate, a thin film transistor formed on the substrate and comprising an active layer, a gate electrode, a source electrode, and a drain electrode, a first gate insulation layer arranged between the gate electrode and the active layer and including an opening portion, a first electrode arranged between the substrate and the first gate insulation layer to overlap the opening portion, an intermediate layer formed on the first electrode and including an organic light emitting layer, a second electrode formed on the intermediate layer, and a capacitor including a first capacitor electrode that is arranged between the substrate and the first gate insulation layer and a second capacitor electrode that is arranged on an upper surface of the first gate insulation layer. | 2013-01-03 |
| 20130001563 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An OLED device includes a thin film transistor including an active layer, a gate bottom electrode, a gate top electrode, an insulating layer covering the gate electrode, and a source electrode and a drain electrode on the insulating layer contacting the active layer; an organic light-emitting device electrically connected to the thin film transistor and including a sequentially stacked pixel electrode, on the same layer as the gate bottom electrode, emissive layer, and, opposite electrode, a pad bottom electrode on the same layer as the gate bottom electrode and a pad top electrode pattern on the same layer as the gate top electrode, the pad top electrode pattern including openings exposing the pad bottom electrode, and an insulation pattern covering the upper surface of the pad top electrode pattern on the same layer as the insulating layer, on an upper surface of the pad bottom electrode. | 2013-01-03 |
| 20130001564 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device including a TFT comprising an active layer, a gate electrode comprising a lower gate electrode and an upper gate electrode, and source and drain electrodes insulated from the gate electrode and contacting the active layer; an organic light-emitting device electrically connected to the TFT and comprising a pixel electrode formed in the same layer as where the lower gate electrode is formed; and a pad electrode electrically coupled to the TFT or the organic light emitting device and comprising a first pad electrode formed in the same layer as in which the lower gate electrode is formed, a second pad electrode formed in the same layer as in which the upper gate electrode is formed, and a third pad electrode comprising a transparent conductive oxide, the first, second, and third pad electrodes being sequentially stacked. | 2013-01-03 |
| 20130001565 | DISPLAY DEVICES AND METHODS OF MANUFACTURING DISPLAY DEVICES - A display device includes a gate line, a switching device, a first electrode, an organic light emitting structure and a second electrode. The gate line may include a first conductive layer pattern and a second conductive layer pattern. The first conductive layer pattern may extend along a first direction and the second conductive layer pattern may extend along a second direction. The switching device may be connected to the gate line. The first electrode may be electrically connected to the switching device. The organic light emitting structure may be disposed on the first electrode. The second electrode may be disposed on the organic light emitting structure. | 2013-01-03 |
| 20130001566 | BACK PLANE FOR USE IN FLAT PANEL DISPLAYS AND METHOD OF MANUFACTURING THE BACK PLANE - In one aspect, a back plane for use in flat panel displays is provided. The back plane may include a substrate; an auxiliary layer; a source electrode and a drain electrode; an active layer; a first insulation layer; a gate electrode; and a second insulation layer. | 2013-01-03 |
| 20130001567 | THIN FILM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel according to an exemplary embodiment of the present invention comprises a substrate, a gate line formed on the substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, and a data line formed on the semiconductor layer, wherein the data line comprises a lower data layer, an upper data layer, a data oxide layer, and a buffer layer, wherein the upper data layer and the buffer layer comprise a same material. | 2013-01-03 |
| 20130001568 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - This invention provides a semiconductor device having high operation performance and high reliability. An LDD region | 2013-01-03 |
| 20130001569 | DISPLAY APPARATUS - A capacitance setting line is disposed at the top end of a pixel, a light emission setting line is disposed at the bottom end of the pixel, and a gate line is disposed at the center between both the lines. A selection transistor, a potential control transistor and a capacitor are disposed between the gate line and a capacitance setting line. A short-circuit transistor, a drive transistor and a drive control transistor are disposed between the gate line and the light emission setting line. With such an arrangement, the efficient arrangement of wiring contacts can be performed, and an aperture ratio can be increased. | 2013-01-03 |
| 20130001570 | PIXEL STRUCTURE - A pixel structure disposed on a substrate having an array of pixel areas is provided. A common electrode is disposed on the substrate to surround each of the pixel areas. A capacitance storage electrode is disposed on the common electrode. A first passivation layer covers the capacitance storage electrode and the common electrode. A gate insulation layer covers the scan line and the gate electrode. A semiconductor layer is disposed on the gate insulation layer. A data line, a source and a drain are disposed in each of the pixel areas and the source and the drain are disposed on two sides of the semiconductor layer. A second passivation layer has a contact window and covers the data line, the source, and the drain. A pixel electrode is disposed in each of the pixel areas and is electrically connected with the drain through the contact window. | 2013-01-03 |
| 20130001571 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed. | 2013-01-03 |
| 20130001572 | DISPLAY DEVICE, THIN-FILM TRANSISTOR USED FOR DISPLAY DEVICE, AND METHOD OF MANUFACTURING THIN-FILM TRANSISTORS - A thin-film transistor used for a display device includes a gate electrode formed on an insulating substrate; a gate insulating film formed on the substrate so as to cover the gate electrode; a semiconductor layer composed of first semiconductor layer and second semiconductor layer formed on the gate insulating film; an ohmic contact layer formed on the semiconductor layer; and a source electrode and a drain electrode formed on the ohmic contact layer so as to be spaced from each other. The transistor further includes an etching stopper made of spin-on glass (SOG) on a channel-forming region of the semiconductor layer. | 2013-01-03 |
| 20130001573 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A thin film transistor including a gate electrode, a semiconductor layer, a gate insulating layer, a source electrode, a drain electrode and a graphene pattern. The semiconductor layer overlaps with the gate electrode. The gate insulating layer is disposed between the gate electrode and the semiconductor layer. The source electrode overlaps with the semiconductor layer. The drain electrode overlaps with the semiconductor layer. The drain electrode is spaced apart from the source electrode. The graphene pattern is disposed between the semiconductor layer and at least one of the source electrode and the drain electrode. | 2013-01-03 |
| 20130001574 | FIELD TRANSISTOR STRUCTURE MANUFACTURED USING GATE LAST PROCESS - According to embodiments of the invention, a field transistor structure is provided. The field transistor structure includes a semiconductor substrate, a metal gate, a polycrystalline silicon (polysilicon) layer, and first and second metal portions. The polysilicon layer has first, second, third, and fourth sides and is disposed between the semiconductor substrate on the first side and the metal gate on the second side. The polysilicon layer is also disposed between the first and second metal portions on the third and fourth sides. According to some embodiments of the present invention, the field transistor structure may also include a thin metal layer disposed between the polysilicon layer and the semiconductor substrate. The thin metal layer may be electronically coupled to each of the first and second metal portions. | 2013-01-03 |
| 20130001575 | METHODS FOR STRESSING TRANSISTOR CHANNELS OF A SEMICONDUCTOR DEVICE STRUCTURE, AND A RELATED SEMICONDUCTOR DEVICE STRUCTURE - The present invention includes methods for stressing transistor channels of semiconductor device structures. Such methods include the formation of so-called near-surface “nanocavities” adjacent to the source/drain regions, forming extensions of the source/drain regions adjacent to and including the nanocavities, and implanting matter of a type that will expand or contract the volume of the nanocavities, depending respectively upon whether compressive strain is desirable in transistor channels between the nanocavities, as in PMOS field effect transistors, or tensile strain is wanted in transistor channels, as in NMOS field effect transistors, to enhance carrier mobility and transistor speed. Semiconductor device structures and semiconductor devices including these features are also disclosed. | 2013-01-03 |
| 20130001576 | SEMICONDUCTOR DEVICE INCLUDING METAL SILICIDE LAYER AND METHOD FOR MANUFACTURING THE SAME - A device formed from a method of fabricating a fine metal silicide layer having a uniform thickness regardless of substrate doping. A planar vacancy is created by the separation of an amorphousized surface layer of a silicon substrate from an insulating layer, a metal source enters the vacancy through a contact hole through the insulating later connecting with the vacancy, and a heat treatment converts the metal in the vacancy into metal silicide. The separation is induced by converting the amorphous silicon into crystalline silicon. | 2013-01-03 |
| 20130001577 | BACKPLANE FOR FLAT PANEL DISPLAY APPARATUS, FLAT PANEL DISPLAY APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING BACKPLANE FOR FLAT PANEL DISPLAY APPARATUS - In one aspect, a back plane for a flat panel display apparatus include: a substrate; a source electrode and a drain electrode formed on the substrate; a capacitor bottom electrode formed on a same layer as the source/drain electrodes; an active layer formed on the substrate in correspondence to the source electrode and the drain electrode; a blocking layer interposed between the source electrode and the drain electrode and the active layer; a first insulation layer formed on the substrate to cover the active layer; a gate electrode formed on the first insulation layer in correspondence to the active layer; a capacitor top electrode formed on a same layer as the gate electrode in correspondence to the capacitor bottom electrode; and a second insulation layer formed on the first insulation layer to cover the gate electrode and the capacitor top electrode is provided. | 2013-01-03 |
| 20130001578 | LIGHT-EMITTING DEVICE AND ORGANIC LIGHT EMITTING DISPLAY APPARATUS INCLUDING THE SAME - A light emitting device includes: a substrate; a first electrode on the substrate, the first electrode including a light-transmissive material having a refractive index greater than a refractive index of the substrate; a refraction conversion layer between the substrate and the first electrode, the refraction conversion layer including a first layer having a refractive index greater than the refractive index of the first electrode, a second layer having a refractive index smaller than the refractive index of the first layer, and a third layer having a refractive index smaller than the refractive index of the second layer, wherein the first layer, the second layer, and the third layer are sequentially formed in a direction from the first electrode toward the substrate; a second electrode facing the first electrode; and an organic emissive layer between the first electrode and the second electrode. | 2013-01-03 |
| 20130001579 | Array Substrate for Fringe Field Switching Mode Liquid Crystal Display and Method of Manufacturing the Same - A method of manufacturing an array substrate for a fringe field switching mode liquid crystal display includes: forming an auxiliary insulating layer having a first thickness; forming first and second photoresist patterns on the auxiliary insulating layer; performing an ashing to remove the second photoresist pattern and expose the auxiliary insulating layer therebelow; performing a dry etching to remove the auxiliary insulating layer not covered by the first photoresist pattern and expose a first passivation layer and to form an insulating pattern below the first photoresist pattern, the insulating pattern and the first photoresist pattern forming an undercut shape; forming a transparent conductive material layer having a fourth thickness less than the first thickness; and performing a lift-off process to remove the first photoresist pattern and the transparent conductive material layer thereon together and form a pixel electrode. | 2013-01-03 |
| 20130001580 | THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DIODE DISPLAY USING THE SAME AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor includes an active layer on a substrate and crystallized through growth of crystals due to an action of metal catalysts, a gate insulating layer pattern on a part of the active layer; a gate electrode on a part of the gate insulating layer pattern; an anti-etching layer pattern formed on the gate insulating layer pattern to cover the gate electrode, the anti-etching layer pattern being coextensive with the gate insulating layer pattern; a source electrode and a drain electrode on the active layer and the anti-etching layer pattern; and gettering layer patterns between the active layer and the anti-etching layer pattern and between the source electrode and the drain electrode to eliminate the metal catalysts used for crystallization of the active layer, the gettering layer patterns being coextensive with the source electrode and drain electrode. | 2013-01-03 |
| 20130001581 | ACTIVE MATRIX LIQUID CRYSTAL DISPLAY DEVICE - A first insulating thin film having a large dielectric constant such as a silicon nitride film is formed so as to cover a source line and a metal wiring that is in the same layer as the source line. A second insulating film that is high in flatness is formed on the first insulating film. An opening is formed in the second insulating film by etching the second insulating film, to selectively expose the first insulating film. A conductive film to serve as a light-interruptive film is formed on the second insulating film and in the opening, whereby an auxiliary capacitor of the pixel is formed between the conductive film and the metal wiring with the first insulating film serving as a dielectric. | 2013-01-03 |
| 20130001582 | Semiconductor Device and A Method of Manufacturing the Same - A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained. | 2013-01-03 |
| 20130001583 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - This invention provides a semiconductor device having high operation performance and high reliability. An LDD region | 2013-01-03 |
| 20130001584 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a stacked structure unit, a transparent, p-side and n-side electrodes. The unit includes n-type semiconductor layer, a light emitting portion provided on a part of the n-type semiconductor layer and p-type semiconductor layer provided on the light emitting portion. The transparent electrode is provided on the p-type semiconductor layer. The p-side electrode is provided on the transparent electrode. The n-side electrode is provided on the n-type semiconductor layer. The transparent electrode has a hole provided between the n-side and p-side electrodes. A width of the hole along an axis perpendicular to an axis from the p-side electrode toward the n-side electrode is longer than widths of the n-side and p-side electrodes. A distance between the hole and the n-side electrode is not longer than a distance between the hole and the p-side electrode. | 2013-01-03 |
| 20130001585 | GALLIUM NITRIDE RECTIFYING DEVICE - A gallium nitride rectifying device includes a p-type gallium nitride based semiconductor layer and an n-type gallium nitride based semiconductor layer, the two layers forming a pn junction with each other. The p-type gallium nitride based semiconductor layer has a carrier trap (level) density of not more than 1×10 | 2013-01-03 |
| 20130001586 | SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING - A method for forming a substrate includes forming a base layer comprising a Group III-V material on a substrate, cooling the base layer and inducing cracks in the base layer, and forming a bulk layer comprising a Group III-V material on the base layer after cooling. | 2013-01-03 |
| 20130001587 | HIGH ELECTRON MOBILITY TRANSISTORS AND METHODS OF MANUFACTURING THE SAME - High electron mobility transistors (HEMTs) including a cavity below a drain and methods of manufacturing HEMTS including removing a portion of a substrate below a drain. | 2013-01-03 |
| 20130001588 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor device composed of a Group III nitride semiconductor has the following structure. A substrate has on it an n-type first semiconductor layer, an active layer, and a p-type second semiconductor layer in this order. Two first end faces are formed by cleavage and oppose each other in planar view. Two trenches extend to the two first end faces in the direction orthogonal to the first end faces in planar view. Bottoms of the trenches are positioned at least below the lower surface of the active layer. Second end faces are formed by laser scribing in the direction orthogonal to the first end faces and outside the trenches. | 2013-01-03 |
| 20130001589 | LATERAL EXTENDED DRAIN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (LEDMOSFET) WITH TAPERED DIELECTRIC PLATES TO ACHIEVE A HIGH DRAIN-TO-BODY BREAKDOWN VOLTAGE, A METHOD OF FORMING THE TRANSISTOR AND A PROGRAM STORAGE DEVICE FOR DESIGNING THE TRANSISTOR - A lateral, extended drain, metal oxide semiconductor, field effect transistor (LEDMOSFET) with a high drain-to-body breakdown voltage (Vb) incorporates gate structure extensions on opposing sides of a drain drift region. The extensions are tapered such that a distance between each extension and the drift region increases linearly from one end adjacent to the channel region to another end adjacent to the drain region. In one embodiment, these extensions can extend vertically through the isolation region that surrounds the LEDMOSFET. In another embodiment, the extensions can sit atop the isolation region. In either case, the extensions create a strong essentially uniform horizontal electric field profile within the drain drift. Also disclosed are a method for forming the LEDMOSFET with a specific Vb by defining the dimensions of the extensions and a program storage device for designing the LEDMOSFET to have a specific Vb. | 2013-01-03 |
| 20130001590 | LIGHT EMITTING DIODES AND METHODS FOR MANUFACTURING LIGHT EMITTING DIODES - Light emitting diodes and methods for manufacturing light emitting diodes are disclosed herein. In one embodiment, a method for manufacturing a light emitting diode (LED) comprises applying a first light conversion material to a first region on the LED and applying a second light conversion material to a second, different region on the LED. A portion of the LED is exposed after applying the first and second light conversion materials. | 2013-01-03 |
| 20130001591 | FINFET DESIGN AND METHOD OF FABRICATING SAME - An integrated circuit device and method for manufacturing the same are disclosed. An exemplary device includes a semiconductor substrate having a substrate surface and a trench isolation structure disposed in the semiconductor substrate for isolating an NMOS region of the device and from a PMOS region of the device. The device further includes a first fin structure comprising silicon or SiGe disposed over a layer of III-V semiconductor material having a high band gap energy and a lattice constant greater than that of Ge; a second fin structure comprising silicon or SiGe disposed over a layer of III-V semiconductor material having a high band gap energy and a lattice constant smaller than that of Ge; and a gate structure disposed over and arranged perpendicular to the first and second fin structures. | 2013-01-03 |
| 20130001592 | SILICON CARBIDE SEMICONDUCTOR DEVICE - In a silicon carbide semiconductor device, a plurality of trenches has a longitudinal direction in one direction and is arranged in a stripe pattern. Each of the trenches has first and second sidewalls extending in the longitudinal direction. The first sidewall is at a first acute angle to one of a (11-20) plane and a (1-100) plane, the second sidewall is at a second acute angle to the one of the (11-20) plane and the (1-100) plane, and the first acute angle is smaller than the second acute angle. A first conductivity type region is in contact with only the first sidewall in the first and second sidewalls of each of the trenches, and a current path is formed on only the first sidewall in the first and second sidewalls. | 2013-01-03 |
| 20130001593 | SEMICONDUCTOR DEVICE STRUCTURES INCLUDING TRANSISTORS WITH ENERGY BARRIERS ADJACENT TO TRANSISTOR CHANNELS AND ASSOCIATED METHODS - A semiconductor device structure includes a transistor with an energy barrier beneath its transistor channel. The energy barrier prevents leakage of stored charge from the transistor channel into a bulk substrate. Methods for fabricating semiconductor devices that include energy barriers are also disclosed. | 2013-01-03 |
| 20130001594 | Electronic Device - A method of making an electronic device comprising a double bank well-defining structure, which method comprises: providing an electronic substrate; depositing a first insulating material on the substrate to form a first insulating layer; depositing a second insulating material on the first insulating layer to form a second insulating layer; removing a portion of the second insulating layer to expose a portion of the first insulating layer and form a second well-defining bank; depositing a resist on the second insulating layer and on a portion of the exposed first insulating layer; removing the portion of the first insulating layer not covered by the resist, to expose a portion of the electronic substrate and form a first well-defining bank within the second well-defining bank; and removing the resist. The method can provide devices with reduced leakage currents. | 2013-01-03 |
| 20130001595 | METHOD OF MANUFACTURING AN OLED DEVICE WITH SPATIALLY ISOLATED LIGHT-EMITTING AREAS - The invention describes a method of forming spatially isolated light- emitting areas (R | 2013-01-03 |
| 20130001596 | DEPOSITION OF ESD PROTECTION ON PRINTED CIRCUIT BOARDS - A method and apparatus for providing electro-static discharge (ESD) protection to light emitting diode (LED) systems on printed circuit boards (PCBs). Protection is provided by ESD diodes deposited on the PCBs configured as flexible substrates. Various deposition techniques are employed including chemical vapor deposition, pulsed laser deposition and atomic layer deposition. | 2013-01-03 |
| 20130001597 | Lighting Device Having a Color Tunable Wavelength Converter - There is herein described a lighting device including at least one LED and a wavelength converter. The wavelength converter includes a supporting plate, a plurality of first host sites and a plurality of second host site. The supporting plate is disposed over the LED. The plurality of the first host sites is disposed directly on a surface of the supporting plate. Each of the plurality of first host sites consists essentially of a first matrix and a plurality of first quantum dots dispersed in the first matrix. The first quantum dots have a first common emission peak wavelength. The plurality of the second host sites is disposed directly on the surface of the supporting plate. Each of the plurality of second host sites consists essentially of a second matrix and a plurality of second quantum dots dispersed in the second matrix. The second quantum dots have a second common emission peak wavelength. The second common emission peak wavelength is different from the first common emission peak wavelength. | 2013-01-03 |
| 20130001598 | METHOD AND DEVICE FOR A CATHODE STRUCTURE FOR FLEXIBLE ORGANIC LIGHT EMITTING DIODE (OLED) DEVICE - A method for making a flexible OLED lighting device includes forming a plurality of OLED elements on a flexible planar substrate, wherein at least one of the OLED elements includes a continuous respective anode layer formed over the substrate, one or more organic light emitting materials formed over the anode layer, a cathode layer formed over the light emitting materials, and an encapsulating protective cover formed over the cathode layer. At least one of the OLED elements defines a continuous light region on the substrate, wherein the substrate and combination of OLED elements define an active light area. The active light area is bendable from a flat planar configuration to a bend configuration having a design bending radius. The thickness of the cathode layer is formed between a minimum thickness value and a maximum thickness value as a function of the size of the active light area and the design bending radius. An OLED in accordance with these aspects is also provided. | 2013-01-03 |
| 20130001599 | LIGHT EMITTING DEVICE PACKAGE AND LIGHT UNIT INCLUDING THE SAME - An LED package includes a body; a first lead frame having a first cavity in the body; a second lead frame having a second cavity in the body; a first bonding part protruding into a region between a first lateral side of the body and the first cavity from the first lead frame; a second bonding part protruding into a region between a second lateral side of the body, and the second cavity from the second lead frame; a first LED in the first cavity; a second LED in the second cavity; a third lead frame disposed between the first lateral side and the first cavity; a fourth lead frame disposed between the second lateral side and the second cavity; a first protective device on one of the third lead frame and the first bonding part; and a second protective device on one of the fourth lead frame and the second bonding part. | 2013-01-03 |
| 20130001600 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - An organic light-emitting display apparatus includes an organic light-emitting device including a pixel electrode, an opposite electrode facing the pixel electrode, and an organic light-emitting layer interposed between the pixel electrode and the opposite electrode; a first polarization plate disposed on a surface of the organic light-emitting device, the organic light-emitting device being configured to emit light through the first polarization plate; a second polarization plate facing the first polarization plate; and an optical compensation member between the first polarization plate and the second polarization plate. | 2013-01-03 |
| 20130001601 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device includes a substrate having a luminescent region and a non-luminescent region, an insulation layer on the substrate, a first electrode on the insulation layer, at least one light emitting structure on the first electrode, a second electrode on the light emitting structure, and at least one reflecting structure at one of the first electrode or the second electrode around the at least one light emitting structure. The reflecting structure may be configured to reflect light back toward the luminescent region. | 2013-01-03 |
| 20130001602 | ORGANIC LIGHT EMITTING DEVICE, ORGANIC LIGHT EMITTING DISPLAY APPARATUS, AND METHODS OF MANUFACTURING THE SAME - An organic light emitting display device includes a buffer layer on a substrate, the buffer layer including nano-particles, a pixel electrode on the buffer layer, an opposite electrode on the pixel electrode and facing the pixel electrode, and an organic emission layer between the pixel electrode and the opposite electrode. | 2013-01-03 |
| 20130001603 | METHODS OF FORMING INCLINED STRUCTURES ON INSULATION LAYERS, ORGANIC LIGHT EMITTING DISPLAY DEVICES AND METHODS OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICES - An organic light emitting display device comprises a first substrate, an insulation layer having an inclined structure, a first electrode, a pixel defining layer defining a luminescent region and a non-luminescent region, an organic light emitting structure, a second electrode and a second substrate. Lateral portions of the first electrode, the second electrode and/or the pixel defining layer may have an inclination angle for preventing a total reflection of light generated from the organic light emitting structure, so that the organic light emitting display device may ensure a light efficiency substantially larger than that of the conventional organic light emitting display device by about at least 30 percent. | 2013-01-03 |
| 20130001604 | LIGHT EMITTING DEVICE - There is a reflective layer covering almost the entire surface of the light emitting portion except the portions where the light emitting elements are arranged, it is possible to increase the reflectivity of the light emitting portion to realize a higher luminance. In addition, the heat generated from the light emitting elements can be dissipated through the reflective layer, so that it is possible to prevent overheat of the light emitting device, and it is thus possible to improve the reliability of the light emitting device. | 2013-01-03 |
