01st week of 2009 patent applcation highlights part 48 |
Patent application number | Title | Published |
20090004708 | Process For Producing Glycolic Acid From Formaldehyde And Hydrogen Cyanide - A process is provided for producing glycolic acid from formaldehyde and hydrogen cyanide. More specifically, heat-treated formaldehyde and hydrogen cyanide are reacted to produce glycolonitrile having low concentrations of impurities. The glycolonitrile is subsequently converted to an aqueous solution of ammonium glycolate using an enzyme catalyst having nitrilase activity derived from | 2009-01-01 |
20090004709 | Process For Producing Glycolic Acid From Formaldehyde and Hydrogen Cyanide - A process is provided for producing glycolic acid from formaldehyde and hydrogen cyanide. More specifically, heat-treated formaldehyde and hydrogen cyanide are reacted to produce glycolonitrile having low concentrations of impurities. The glycolonitrile is subsequently converted to an aqueous solution of ammonium glycolate using an enzyme catalyst having nitrilase activity derived from | 2009-01-01 |
20090004710 | Process For Producing Glycolic Acid From Formaldehyde And Hydrogen Cyanide - A process is provided for producing glycolic acid from formaldehyde and hydrogen cyanide. More specifically, heat-treated formaldehyde and hydrogen cyanide are reacted to produce glycolonitrile having low concentrations of impurities. The glycolonitrile is subsequently converted to an aqueous solution of ammonium glycolate using an enzyme catalyst having nitrilase activity derived from | 2009-01-01 |
20090004711 | Process For Producing Glycolic Acid From Formaldehyde And Hydrogen Cyanide - A process is provided for producing glycolic acid from formaldehyde and hydrogen cyanide. More specifically, heat-treated formaldehyde and hydrogen cyanide are reacted to produce glycolonitrile having low concentrations of impurities. The glycolonitrile is subsequently converted to an aqueous solution of ammonium glycolate using an enzyme catalyst having nitrilase activity derived from | 2009-01-01 |
20090004712 | Drying apparatus and methods for ethanol production - The apparatus and methods disclosed herein relate to the production of dried co-products from stillage produced by an ethanol production facility. In various aspects, the apparatus and methods disclosed herein relate to an ethanol production facility that produces ethanol and stillage from grain, and a pulse combustion dryer in communication with the ethanol production facility to receive stillage therefrom and adapted to dry the stillage into a dried material | 2009-01-01 |
20090004713 | Membrane-augmented distillation with pressure change to separate solvents from water - Processes for removing water from organic solvents, such as ethanol. The processes include distillation in two columns operated at sequentially higher pressure, followed by treatment of the overhead vapor by one or two membrane separation steps. | 2009-01-01 |
20090004714 | Non-Pressurised Pre-Treatment, Enzymatic Hydrolysis and Frementation of Waste Fractions - The present invention relates to a process for production of fermentation products, including bioethanol by non-pressurised pre-treatment, enzymatic hydrolysis and fermentation of waste fractions containing mono- and/or polysaccharides, having a relatively high dry matter content. The process in its entirety, i.e. from non-pressurised pre-treatment over enzymatic hydrolysis and fermentation to sorting of fermentable and non-fermentable solids can be processed at a relatively high dry matter content in a single vessel or similar device using free fall mixing for the mechanical processing of the waste fraction. | 2009-01-01 |
20090004715 | Glycerol Feedstock Utilization for Oil-Based Fuel Manufacturing - The invention provides methods of manufacturing biodiesel and other oil-based compounds using glycerol and combinations of glycerol and other feedstocks as an energy source in fermentation of oil-bearing microorganisms. Methods disclosed herein include processes for manufacturing high nutrition edible oils from non-food feedstock materials such as waste products from industrial waste transesterification processes. Also included are methods of increasing oil yields by temporally separating glycerol and other feedstocks during cultivation processes. Also provided herein are oil-bearing microbes containing exogenous oil production genes and methods of cultivating such microbes on glycerol and other feedstocks. | 2009-01-01 |
20090004716 | COMPOSITIONS COMPRISING HIGH CONCENTRATION OF BIOLOGICALLY ACTIVE MOLECULES AND PROCESSES FOR PREPARING THE SAME - Large scale processes for producing high purity samples of biologically active molecules of interest from bacterial cells are disclosed. The methods comprise the steps of producing a lysate solution by contacting a cell suspension of said plurality of cells with lysis solution; neutralizing said lysate solution with a neutralizing solution to produce a dispersion that comprises neutralized lysate solution and debris; filtering the dispersion through at least one filter; performing ion exchange separation on said neutralized lysate solution to produce an ion exchange eluate; and performing hydrophobic interaction separation on said ion exchange eluate to produce a hydrophobic interaction solution. Further, provided are compositions comprising large scale amounts of plasmid DNA produced by the disclosed large scale processes. | 2009-01-01 |
20090004717 | Device and Method to Facilitate Directed Delivery and Electroporation Using a Charged Stream - A method for facilitating a delivery of a molecule into an interior space of a cell includes the steps of introducing a molecule into a biological structure comprising a cell and applying a substantially continuous low-level electric field, in the form of non-thermal plasma (ionized gas) generated by a direct current voltage applied to an electrode, to the molecule and biological structure. The field is applied for a duration sufficient to effect a change in porosity the cell of the biological structure sufficient to facilitate an entry of a desired molecule into an interior thereof. | 2009-01-01 |
20090004718 | Antioxidant Fermenting Microorganism Agent Reducing Volatile Organic Compounds From Polyurethane Foam, and Urethane Foam Comprising the Same - Disclosed is an antioxidant fermenting microorganism agent and a polyurethane foam including the same. The antioxidant fermenting microorganism agent is used to generate a substance that is capable of reducing an amount of volatile organic compounds generated from the polyurethane foam and has an antimicrobial ability. The polyurethane foam containing the antioxidant fermenting microorganism according to the present invention can be used as the material for the interior of a vehicle to protect humans from noxious substances causing sick car syndrome. | 2009-01-01 |
20090004719 | Protein-protein interactions in human immunodeficiency virus - The present invention relates to protein-protein interactions involved in AIDS. More specifically, the present invention relates to complexes of polypeptides or polynucleotides encoding the polypeptides, fragments of the polypeptides, antibodies to the complexes, Selected Interacting Domains (SID®) which are identified due to the protein-protein interactions, methods for screening drugs for agents which modulate the interaction of proteins and pharmaceutical compositions that are capable of modulating the protein-protein interactions. | 2009-01-01 |
20090004720 | Smart Biocatalysts For Organic Synthesis - The present disclosure relates to compositions, systems, and methods that include a reusable biocatalyst. A reusable biocatalytic composition may include a stimulus-responsive support operable to be soluble under at least one first condition and insoluble under at least one second condition; and a biocatalyst bound to the stimulus-responsive support complex. According to some embodiments, a method for catalyzing a reaction may include contacting a first reactant with a composition comprising a stimulus-responsive support, a biocatalyst linked to the stimulus-responsive support, and a first solvent under conditions in which the stimulus-responsive support is soluble in the solvent and the reactant is converted to a product. A reusable biocatalyst system, in some embodiments, may include (a) a stimulus-responsive support; (b) a biocatalyst (i) bound to the stimulus-responsive support complex and (ii) having catalytic activity in the presence of a substrate; and a solvent operable to support both first and second condition. | 2009-01-01 |
20090004721 | Dengue virus mutant strain MBU 01-2002 - The invention includes a genetic construct and a mutant dengue virus, designated as strain MBU 01-2002, which is a mutant dengue virus generated by genetic modification of the 13-amino acid sequence just proximal to the pr-M junction within the prM coding region of the genome. The modification involves increasing the number of positively charged amino acid and abolishing the negatively charged amino acid in this pr-M junction sequence. The mutant dengue virus strain MBU 01-2002 possesses less prM protein on the viral envelope than the prototype dengue virus, is capable of inducing infected C6/36 cells to fuse at neutral pH, is as efficient as the prototype virus in the intracellular multiplication, but is defective in its release from infected cells. | 2009-01-01 |
20090004722 | Recombinant Parainfluenza Virus Expression Systems And Vaccines - The present invention relates to recombinant bovine parainfluenza virus (bPIV) cDNA or RNA which may be used to express heterologous gene products in appropriate host cell systems and/or to rescue negative strand RNA recombinant viruses that express, package, and/or present the heterologous gene product. The chimeric viruses and expression products may advantageously be used in vaccine formulations including vaccines against a broad range of pathogens and antigens. | 2009-01-01 |
20090004723 | Methods and Compositions Concerning Poxviruses and Cancer - The present invention concerns methods and compositions for the treatment of cancer and cancer cells using altered poxviruses, including a vaccinia virus that has been altered to generate a more effective therapeutic agent. Such poxviruses are engineered to be attenuated or weakened in their ability to affect normal cells. In some embodiments, methods and compositions involve poxviruses that possess mutations that result in poxviruses with diminished or eliminated capability to implement an antiviral response in a host. Poxviruses with these mutations in combination with other mutations can be employed for more effective treatment of cancer. | 2009-01-01 |
20090004724 | METHOD FOR ENHANCING PRODUCTION OF ISOPRENOID COMPOUNDS - The present invention provides methods of producing an isoprenoid or an isoprenoid precursor in a genetically modified host cell. The methods generally involve modulating the level of hydroxymethylglutaryl-CoA (HMG-CoA) in the cell, such that the level of HMG-CoA is not toxic to the cell and/or does not substantially inhibit cell growth, but is maintained at a level that provides for high-level production of mevalonate, IPP, and other downstream products of an isoprenoid or isoprenoid pathway, e.g., polyprenyl diphosphates and isoprenoid compounds. The present invention further provides genetically modified host cells that are suitable for use in a subject method. The present invention further provides recombinant nucleic acid constructs for use in generating a subject genetically modified host cell, including recombinant nucleic acid constructs comprising nucleotide sequences encoding one or more mevalonate pathway enzymes, and recombinant vectors (e.g., recombinant expression vectors) comprising same. The present invention further provides methods for identifying nucleic acids that encode HMG-CoA reductase (HMGR) variants that provide for relief of HMG-CoA accumulation-induced toxicity. The present invention farther provides methods for identifying agents that reduce intracellular accumulation of HMG-CoA. | 2009-01-01 |
20090004725 | Process For Producing Protein With Reduction of Acidic Sugar Chain and Glycoprotein Produced Thereby - The present invention intends to find out a gene participating in addition of mannose phosphate to a sugar chain of a glycoprotein originating in a yeast belonging to the genus | 2009-01-01 |
20090004726 | Inhibitor Tolerant Saccharomyces Cerevisiae Strain - Furfural and 5-hydroxymethylfurfural (HMF) are representative inhibitors to ethanologenic yeast generated from biomass pretreatment using dilute acid hydrolysis. Few yeast strains tolerant to inhibitors are available. A novel tolerant strain of | 2009-01-01 |
20090004727 | METHOD FOR THE SEPARATION OF MICROORGANISMS ADHERED TO A SOLID SAMPLE BY MEANS OF A PHOSPHATE-BASED DAMPER AND SONICATION OF THE SAMPLE - The present invention provides a method for the separation of microorganisms of a microbiological community present in a solid sample. And once the microorganisms are isolated, they are used in microbiological techniques, or their nucleic acids, both DNA and RNA, are extracted from them for carrying out molecular biology techniques. In accordance with the present invention, the method for the separation of microorganisms adhered to a solid sample comprises the following stages: Providing a solid sample with microorganisms adhered to it; adding to the solid sample a high molarity phosphate-based buffer containing a phosphate solution of a concentration greater than 0.5 M, ethanol, and a non-ionic surfactant; sonicating, and recovering the supernatant, comprising microorganisms separated from the solid sample. | 2009-01-01 |
20090004728 | Method of biotreatment for solid materials in a nonstirred surface bioreactor - A method of biotreating a solid material to remove an undesired compound using a nonstirred surface bioreactor is provided. According to the method, the surface of a plurality of coarse substrates is coated with a solid material to be biotreated to form a plurality of coated coarse substrates. The coarse substrates have a particle size greater than about 0.3 cm and the solid material to be biotreated has a particle size less than about 250 μm. A nonstirred surface reactor is then formed by stacking the plurality of coated coarse substrates into a heap or placing the plurality of coated coarse substrates into a tank so that the void volume of the reactor is greater than or equal to about 25%. The solid material is biotreated in the surface bioreactor until the undesired compound in the solid material is degraded to a desired concentration. | 2009-01-01 |
20090004729 | REACTION DEVICE - A reaction device including: a plurality of reaction areas; and a plurality of heating parts configured to be each provided for a respective one of the reaction areas, wherein each of the heating parts includes: a heat source; a scan line for selecting the heating part; a data line that transmits heating amount information used for heating to the heat source; a writer that acquires the heating amount information transmitted from the data line; a holder that stores the heating amount information also after the scan line is turned to a non-selected state; and a heat generation controller that controls heat generation of the heat source based on the heating amount information. | 2009-01-01 |
20090004730 | Cell Obsevation Aiding Instrument and Method of Cell Observation Therewith - A cell observation support instrument having opposed first and second surface members | 2009-01-01 |
20090004731 | Cell culture apparatus and a fabricating method of the same - A cell culture apparatus and a method for fabricating the cell culture apparatus are disclosed, the method comprises forming at least one fillister on a biomaterial composite layer by photolithography, wherein the biomaterial composite layer contains two gel materials. One is a bio-compatible hydrogel composition having various weight ratio of: 2-hydroxyethylmathacrylate (HEMA), bisphenol A and glycidyl methacrylate (bis-GMA), triethylene glycol dimethacrylate (TEGDMA), r-methacryloxypropyl trimethoxysilane (MAPTMS), α,α-diethoxyacetophenone (DEAP), and the other one is a photo-sensitive silica gel composition. | 2009-01-01 |
20090004732 | Chemical Temperature Control - Exothermic and/or endothermic chemical reactions in combination with phase change materials can produce output temperature(s) within strict tolerances without requiring expensive and complicated external equipment to generate and maintain an output temperature. Similarly, an exothermic phase change material, which generates heat as a consequence of crystallizing a supercooled liquid, can generate heat at a constant temperature, without requiring expensive and complicated external equipment, as a consequence of the liquid form of the exothermic phase change material being in equilibrium with the solid form of the exothermic phase change material. Numerous biological and chemical processes and/or diagnostic devices require a constant temperature or temperatures for set periods of time. An example completely non-instrumented diagnostic platform based on nucleic acid amplification is described, which is particularly suited for use in developing countries that may not have access to expensive and complicated external equipment. | 2009-01-01 |
20090004733 | POLYNUCLEOTIDES ENCODING ANTIGENIC HIV TYPE B POLYPEPTIDES, POLYPEPTIDES, AND USES THEREOF - The present invention relates to polynucleotides encoding immunogenic HIV polypeptides. Uses of the polynucleotides in applications including immunization, generation of packaging cell lines, and production of HIV polypeptides are also described. Polynucleotides encoding antigenic HIV polypeptides are described, as are uses of these polynucleotides and polypeptide products therefrom, including formulations of immunogenic compositions and uses thereof. | 2009-01-01 |
20090004734 | Mutated Anti-CD22 Antibodies With Increased Affinity To CD22-Expressing Leukemia Cells - Recombinant immunotoxins are fusion proteins composed of the Fv domains of antibodies fused to bacterial or plant toxins. RFB4 (Fv)-PE38 is an immunotoxin that targets CD22 expressed on B cells and B cell malignancies. The present invention provides antibodies and antibody fragments that have improved ability to bind the CD22 antigen of B cells and B cell malignancies compared to RFB4. Immunotoxins made with the antibodies and antibody fragments of the invention have improved cytotoxicity to CD22-expressing cancer cells. Compositions that incorporate these antibodies into chimeric immunotoxin molecules that can be used in medicaments and methods for inhibiting the growth and proliferation of leukemia and lymphoma cells. | 2009-01-01 |
20090004735 | Promoter and its use - A promoter comprising nucleotides from positions 2489-3038 of FIG. | 2009-01-01 |
20090004736 | GENERATION OF NEURAL STEM CELLS UNDIFFERENTIATED HUMAN EMBRYONIC STEM CELLS - The present invention relates to the generation of neural cells from undifferentiated human embryonic stem cells. In particular it relates to directing the differentiation of human ES cells into neural progenitors and neural cells and the production of functioning neural cells and/or neural cells of a specific type. The invention also includes the use of these cells for the treatment of neurological conditions such as Parkinson's disease. | 2009-01-01 |
20090004737 | Microfluidic Devices and Methods for Fabricating the Same - A microfluidic device includes, in one embodiment, a first silk film coupled to a second silk film with at least one microchannel therebetween. | 2009-01-01 |
20090004738 | Method and apparatus for maintenance and expansion of hemopoietic stem cells and/or progenitor cells - A method of preparing a stromal cell conditioned medium useful in expanding undifferentiated hemopoietic stem cells to increase the number of the hemopoietic stem cells is provided. The method comprising: (a) establishing a stromal cell culture in a stationary phase plug-flow bioreactor under continuous flow on a substrate in the form of a sheet, the substrate including a non-woven fibrous matrix forming a physiologically acceptable three-dimensional network of fibers, thereby expanding undifferentiated hemopoietic stem cells; and (b) when a desired stromal cell density has been achieved, collecting medium from the stationary phase plug-flow bioreactor, thereby obtaining the stromal cell conditioned medium useful in expanding the undifferentiated hemopoietic stem cells. | 2009-01-01 |
20090004739 | Efficient Method of Preparing Dna Inverted Repeat - Conventional techniques for preparing a chimera gene having an inverted repeat sequence of a target sequence suffer from complications since a target sequence is inserted into 2 sites on a vector in sense and antisense orientations, and restriction enzyme recognition sequences must be independently provided at an insertion site of a vector and both ends of the target sequence. | 2009-01-01 |
20090004740 | PRIMATE TOTIPOTENT AND PLURIPOTENT STEM CELLS PRODUCED BY SOMATIC CELL NUCLEAR TRANSFER - Purified totipotent stem cells and pluripotent stems cells derived by somatic cell nuclear transfer are disclosed herein, as well as cell lines, multipotent cells and differentiated cells produced from these stem cells. The stem cells are produced from an enucleated host cell from a first donor and nuclear genetic material from a somatic cell of a second donor. Methods for making and using such compositions of such stem cells are also provided. | 2009-01-01 |
20090004741 | BIODEGRADABLE POLYPHOSPHORAMIDATES FOR CONTROLLED RELEASE OF BIOACTIVE SUBSTANCES - The present invention is directed to a series of new polycationic biodegradable polyphosphoramidates. Process for making the polymers, compositions containing these polymers and bioactive ligands to enhance the cellular uptake ad intracellular trafficking, articles and methods for delivery of drugs and genes using these polymers are described. A gene delivery system based on these polymers is prepared by complex coacervation of nucleic acid (DNA or RNA) with polymers. Targeting ligands and molecules that could facilitate gene transfer can be conjugated to polymers to achieve selective and enhanced gene delivery. The current invention also provides a complex composition with buffering capacity. | 2009-01-01 |
20090004742 | SELECTION OF ANTIGEN-SPECIFIC T CELLS - The requirement of T cell activation for efficient expression of genes after messenger ribonucleic acid (mRNA) transfection is leveraged to identify and enrich antigen-specific T cells responding to antigen-pulsed dendritic cells (DCs). RNA transfection of marker genes is used for the selection and enrichment of antigen-specific T cells for use in adoptive immunotherapy. RNA-modified T cells are also used for the generation of enhanced effector populations for use in adoptive immunotherapy. Genes whose transient expression may significantly enhance the in vivo function of T cells (i.e., migratory receptors, anti-apoptotic genes or cytokines enhancing T cell proliferation/differentiation) are used in this modality. | 2009-01-01 |
20090004743 | HELPER VIRUS-FREE AAV PRODUCTION - A method for the production of adeno-associated virus stocks and recombinant adeno-associated virus stocks that are substantially free of contaminating helper virus is described. The method utilizes transfection with helper virus vectors to replace the infection with helper virus used in the conventional method. | 2009-01-01 |
20090004744 | MINICELLS AS VACCINES - The disclosed invention relates to immunogenic minicells cells (anucleated) and their use to induce an immune response from a subject. | 2009-01-01 |
20090004745 | P19 Expression Units - The present invention relates to the use of nucleic acid sequences for regulating the transcription and expression of genes, the novel promoters and expression units themselves, methods for altering or causing the transcription rate and/or expression rate of genes, expression cassettes comprising the expression units, genetically modified microorganisms with altered or caused transcription rate and/or expression rate, and methods for preparing biosynthetic products by cultivating the genetically modified microorganisms. | 2009-01-01 |
20090004746 | MICROFLUIDIC DEVICE WITH MULTIPLE COGNITIVE AGENTS IMMOBILIZED THEREON AND METHODS FOR ITS FABRICATION AND METHOD OF USE - A microfluidic device allowing for multiple discrete reactions sites and allowing for sequential reactions and sample analysis along with methods for device fabrication and use is provided. The microfluidic device provides a micro-total analysis system on a single substrate and has multiple reaction sites allowing for cascade reactions and analysis on a single chip using micro-quantities of sample and reagents. The microfluidic device provides discrete sites for immobilization of cognitive agents including enzymes, binding proteins, nucleic acids and the like as well as methods for quantitative analysis. The invention also provides methods for the fabrication of the device. | 2009-01-01 |
20090004747 | FILM SENSORS FOR DETECTING FREE CHLORINE - The present invention discloses a thin reagent containing film sensor for detecting and measuring free chlorine in water, where components of the film sensor are a polymeric substrate that contains reactive material, an organic polyhydroxy compound, a reagent that creates an associated polymeric matrix, and an indicator; and a method for making the same. The film sensor can be formed to fit a specific dimension or shape. The film sensor swells or dissolves when exposed to aqueous solutions so that said reagent is released so that it can react with free chlorine, or the film sensor swells when exposed to aqueous solutions so that the aqueous solution diffuses into the film sensor and reacts with said reagent contained within the swollen film sensor. | 2009-01-01 |
20090004748 | Method and Apparatus for Analyzing a Hydrocarbon Mixture Using Nuclear Magnetic Resonance Measurements - A method and apparatus to determine the fractional amount of at least one constituent of a hydrocarbon mixture, comprising dissolving the hydrocarbon mixture in a substantially hydrogen free solvent to produce a diluted solution, the diluted solution having sufficient solvent to render a NMR property of the diluted solution to be predictably related to the constituent concentrations of the hydrocarbon mixture; making NMR measurements on the diluted solution; and determining the fractional amount of at least one constituent of the hydrocarbon mixture from the NMR measurements. | 2009-01-01 |
20090004749 | METHOD AND KIT FOR DETERMINING THE AMOUNT OF DNA BINDING PROTEIN - A kit for determining a quantity of a target DNA binding protein in a liquid sample by using a fluorescence correlation spectroscopy, comprising a first measuring reagent including a fluorescent-labeled nucleic acid probe and a first unlabeled nucleic acid probe, a second measuring reagent including the fluorescent-labeled nucleic acid probe and a second unlabeled nucleic acid probe, wherein the target DNA binding protein is capable of binding to the fluorescent-labeled nucleic acid probe and the first unlabeled nucleic acid probe, and is not capable of binding to the second unlabeled nucleic acid probe; and a method for determining a quantity of a target DNA binding protein in a liquid sample is also disclosed. | 2009-01-01 |
20090004750 | Method of Diagnosing Cerebral Infarction - A method of diagnosing cerebral infarction comprising the step of measuring the concentration of nick β2 glycoprotein I in a body fluid sample; and a method of diagnosing cerebral infarction comprising the steps of measuring the nicked β2 glycoprotein I concentration (N) and the total β2 glycoprotein I concentration (T) in a body fluid sample, calculating the ratio (N/T) of the nicked β2 glycoprotein I concentration (N) to the total β2 glycoprotein I concentration (T), and using the ratio as an indicator, are disclosed. | 2009-01-01 |
20090004751 | Dry optical-chemical carbon-dioxide sensor - The present invention relates to a device for determining carbon dioxide in a gaseous or liquid sample, comprising: a polymer matrix and an indicator embedded in the polymer matrix, wherein the indicator comprises a pH-sensitive dye and a lipophilic, metal cation-ionophore complex, and wherein an anion of the pH-sensitive dye and the metal cation-ionophore complex form an ion-pair which is soluble in the polymer matrix. | 2009-01-01 |
20090004752 | Chemical composition and method for detecting counterfeit paper currency - A composition and method of detecting counterfeit paper currency includes applying a test solution to a paper currency having ink printed thereon. If the paper currency is counterfeit, the test solution causes the ink to release from the paper currency. If the paper currency is genuine, the ink will not release from the paper currency. The test solution may be an aqueous-alcohol solution having a chemical thickener, and preferably includes a de-foaming agent, a bactericide/fungicide and a fragrance. | 2009-01-01 |
20090004753 | LABELING REAGENTS AND METHODS OF THEIR USE - The present disclosure is directed to a reactive ester agent capable of conjugating a reporter molecule to a carrier molecule or solid support. The reactive ester agent has the general formula: | 2009-01-01 |
20090004754 | MULTI-WELL RESERVOIR PLATE AND METHODS OF USING SAME - The present disclosure generally relates to a multi-well reservoir plate and methods of using the same. The multi-well reservoir plate includes a frame portion coupled to a plate portion, where a number of receptacles are formed in the plate portion. The receptacles or wells are sized to receive and support a substance without permitting the substance to leak or discharge from a passage formed in a lower portion of the well and in fluid communication with an upper portion of the well where the substances is supported. In one embodiment, the wells are at least partially filled with a substance, the substance is supported the in the wells for an amount of time, and then the substance is discharged from the wells by applying a force to the substance. By way of example, the force may be a pressure applied to an upper surface of the substance, a pressure (e.g., vacuum) applied to a lower surface of the substance, and/or an inertial force generated by an acceleration of the substance. | 2009-01-01 |
20090004755 | METHODS AND COMPOSITIONS FOR DIAGNOSIS AND/OR PROGNOSIS IN SYSTEMIC INFLAMMATORY RESPONSE SYNDROMES - The present invention relates to methods and compositions for diagnosing SIRS, sepsis, severe sepsis, septic shock, or MODS in a subject, or assigning a prognostic risk for one or more clinical outcomes for a subject suffering from SIRS, sepsis, severe sepsis, septic shock, or MODS, the method comprising performing an immunoassay for CCL23 splice variant. | 2009-01-01 |
20090004756 | METHODS FOR IDENTIFYING AGENTS THAT TARGET LEAKS IN RYANODINE RECEPTORS - The present invention provides screening methods for identifying agents that enhance binding of a ryanodine receptor and its corresponding FKBP protein, such agents to be used in treating diseases associated with ryanodine receptors. | 2009-01-01 |
20090004757 | Analyte Assay Using Particulate Labels - Method for specific detection of one or more analytes in a sample. The method includes specifically associating any one or more analytes in the sample with a scattered-light detectable particle, illuminating any particle associated with the analytes with light under conditions which produce scattered light from the particle and in which light scattered from one or more particles can be detected by a human eye with less than 500 times magnification and without electronic amplification. The method also includes detecting the light scattered by any such particles under those conditions as a measure of the presence of the analytes. | 2009-01-01 |
20090004758 | RESONANT MAGNETIC DISKS FOR BIOANALYTE DETECTION - Embodiments of the invention relate generally to ferromagnetic microdisks, methods of detecting target bioanalyte using ferromagnetic microdisks, and kits (such as for using in the laboratory setting) containing the reagents necessary to make, and/or use ferromagnetic microdisks for bioanalyte detection, depending on the user's planned application. The methods and products allow the fabrication of ferromagnetic microdisks, and their use in the detection of biological molecules with high sensitivity, little or no signal decay, improved safety, convenience, and lowered cost for use and disposal. | 2009-01-01 |
20090004759 | Cobalt-doped indium-tin oxide films and methods - Methods of forming cobalt-doped indium-tin oxide structures are shown. Properties of structures include transparency, conductivity, and ferromagnetism. Monolayers that contain indium, monolayers that contain tin, and monolayers that contain cobalt are deposited onto a substrate and subsequently processed to form cobalt-doped indium-tin oxide. Devices that include oxide structures formed with these methods should have better step coverage over substrate topography and more robust film mechanical properties. | 2009-01-01 |
20090004760 | METHOD FOR PRODUCING A MATRIX FOR DETECTING ELECTROMAGNETIC RADIATION AND METHOD FOR REPLACING AN ELEMENTARY MODULE OF SUCH A DETECTION MATRIX - A method for producing a matrix of electromagnetic radiation detectors made up of a plurality of elementary detection modules mounted on an interconnection substrate. The method includes depositing on the interconnection substrate a predefined number of quantities of solder or hybridization material, intended to constitute hybridization bumps for the elementary modules, in at least a first array for the nominal hybridization, and at least one second array, with the deposits of solder or hybridization material of the second array being lower in volume than those of the first array, depositing a liquid flux on the interconnection substrate, mounting the elementary modules to be hybridized on the interconnection substrate, and raising the temperature of a chamber in which the various elements to be hybridized are positioned until reaching at least the melting point of the solder or hybridization material to join the modules and interconnection substrate together by reflow effect. | 2009-01-01 |
20090004761 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor device is obtained, in which excellent characteristics are achieved, the reliability is improved, and an SiC wafer can also be used for the fabrication. A plurality of Schottky-barrier-diode units | 2009-01-01 |
20090004762 | Stacking apparatus and method for stacking integrated circuit elements - A stacking apparatus that stacks chip assemblies each having a plurality of chips disposed continuously with circuit patterns and electrodes, includes: a plurality of stages each allowed to move arbitrarily, on which the chip assemblies are placed; a storage unit that stores an estimated extent of change in a position of an electrode at each chip, expected to occur as heat is applied to the chip assemblies placed on the plurality of stages during a stacking process; and a control unit that sets positions of the plurality of stages to be assumed relative to each other during the stacking process based upon the estimated extent of change in the position of the electrode at each chip provided from the storage unit and position information indicating positions of individual chips formed at the chip assemblies and controls at least one of the plurality of stages. | 2009-01-01 |
20090004763 | LASER CRYSTALLIZATION METHOD AND CRYSTALLIZATION APPARATUS - The present invention discloses a laser crystallization method and crystallization apparatus using a high-accuracy substrate height control mechanism. There is provided a laser crystallization method includes obtaining a first pulse laser beam having an inverse-peak-pattern light intensity distribution formed by a phase shifter, and irradiating a thin film disposed on a substrate with the first pulse laser beam, thereby melting and crystallizing the thin film, the method includes selecting a desired one of reflected light components of a second laser beam by using a polarizing element disposed on an optical path of the second laser beam when illuminating, with the second laser beam, an first pulse laser beam irradiation position of the thin film, correcting a height of the substrate to a predetermined height by detecting the selected reflected light component, and irradiating the first pulse laser beam to the thin film having the corrected height. | 2009-01-01 |
20090004764 | Method for manufacturing SOI substrate and method for manufacturing semiconductor device - To provide a method for manufacturing an SOI substrate provided with a single-crystal semiconductor layer which is suitable for practical use even when a substrate of which heat-resistant temperature is low, such as a glass substrate, is used, and to manufacture a highly reliable semiconductor device using such an SOI substrate. A semiconductor layer, which is separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface, is heated by supplying high energy by using at least one kind of particles having the high energy, and polishing treatment is performed on the heated surface of the semiconductor layer. At least part of a region of the semiconductor layer can be melted by the heat treatment by supplying high energy to reduce crystal defects in the semiconductor layer. Further, the surface of the semiconductor layer can be polished and planarized by the polishing treatment. | 2009-01-01 |
20090004765 | Method of manufacturing micro-optic device - A micro-optic device including a complicate structure and a movable mirror is made to be manufactured in a reduced length of time. A silicon substrate and a single crystal silicon device layer with an intermediate layer of silicon dioxide interposed therebetween defines a substrate on which a layer of mask material is formed and is patterned to form a mask having the same pattern as the configuration of the intended optical device as viewed in plan view. A surface which is to be constricted as a mirror surface is chosen to be in a plane of the silicon crystal. Using the mask, the device layer is vertically etched by a reactive ion dry etching until the intermediate layer is exposed. Subsequently, using KOH solution, a wet etching which is anisotropic to the crystallographic orientation is performed with an etching rate which is on the order of 0.1 μm/min for a time interval on the order of ten minutes is performed to convert the sidewall surface of the mirror into a smooth crystallographic surface. Subsequently, the intermediate layer is selectively subject to a wet etching to remove the intermediate layer only in an area located below the movable part of the optical device. | 2009-01-01 |
20090004766 | Method for Producing Electronic Components and Pressure Sensor - A method produces electronic components in particular electronic sensors for pressure and differential pressure measurement. Firstly, the semiconductor structure of the electronic components is produced on a wafer. An insulating oxide layer is then applied. A protective metal layer is subsequently applied. The metal layer is applied in sections only in those regions of the wafer in which no splitting, for example by mechanical separation, occurs later. The electronic components thus formed in the wafer are then divided up into individual elements. | 2009-01-01 |
20090004767 | SUSPENDED MEMBRANE PRESSURE SENSING ARRAY - An accurate and low cost macro pressure sensor is described. The pressure sensor includes an array of capacitive sensing elements formed at the intersections of sets of conductors. A lower set of conductors is supported by a substrate and an upper set of conductors is supported on a flexible polymer membrane. Capacitive sensing elements are formed where a conductor in the upper set overlaps a spacer in the lower set. Separators hold the membrane away from the substrate with a separation that, because of deflection of the membrane, varies in relation to the pressure applied to the membrane. As a result, the separation of conductors, and therefore capacitance, in each cell varies in response to the applied pressure. By attaching the membrane to the separators and optionally using slits in the membrane between capacitive sensing elements, measurements made in each capacitive sensing element can be mechanically decoupled. | 2009-01-01 |
20090004768 | RADIATION DETECTING APPARATUS, RADIATION IMAGING APPARATUS AND RADIATION IMAGING SYSTEM - A radiation detecting apparatus according to the present invention includes: pixels including switching elements arranged on an insulating substrate and conversion elements arranged on the switching elements to convert a radiation into electric carriers, the switching elements and the conversion elements are connected with each other, the pixels two-dimensionally arranged on the insulating substrate in a matrix; gate wiring commonly connected with a plurality of switching elements arranged in a row direction on the insulating substrate; signal wiring commonly connected with a plurality of switching elements arranged in a column direction; and a plurality of insulating films arranged between the switching elements and the conversion elements, wherein at least one of the gate wiring and the signal wiring is arranged to be put between the plurality of insulating films. | 2009-01-01 |
20090004769 | METHOD FOR MANUFACTURING IMAGE SENSOR - A method for manufacturing an image sensor is disclosed. The manufacturing method includes forming a unit pixel including a photodiode and a gate on a semiconductor substrate, forming an interlayer insulating layer on the semiconductor substrate including the unit pixel, planarizing the interlayer insulating layer, forming a protection layer with SiH | 2009-01-01 |
20090004770 | METHOD FOR MANUFACTURING VERTICAL CMOS IMAGE SENSOR - A method for manufacturing a vertical CMOS image sensor related to a semiconductor device is disclosed. A high-temperature double annealing process and/or an additional passivation nitride film are selectively applied in order to improve dark leakage characteristics and also to prevent or reduce an incidence of circular defects, thereby enhancing the quality and reliability of the vertical CMOS image sensor. | 2009-01-01 |
20090004771 | METHODS FOR MAKING ELECTRONIC DEVICES WITH A SOLUTION DEPOSITED GATE DIELECTRIC - A method of making an electronic device comprises solution depositing a dielectric composition onto a substrate and polymerizing the dielectric composition to form a gate dielectric. The dielectric composition comprises a polymerizable resin and zirconium oxide nanoparticles. | 2009-01-01 |
20090004772 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate. | 2009-01-01 |
20090004773 | METHODS OF FABRICATING MULTI-LAYER PHASE-CHANGEABLE MEMORY DEVICES - A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase-changeable material pattern. The phase-changeable material pattern includes a first phase-changeable material layer and a second phase-changeable material layer. The first and second phase-changeable material patterns have different chemical, physical, and/or electrical characteristics. For example, the second phase-changeable material layer may have a greater resistivity than the first phase-changeable material layer. For instance, the first phase-changeable material layer may include nitrogen at a first concentration, and the second phase-changeable material layer may include nitrogen at a second concentration that is greater than the first concentration. Related devices and fabrication methods are also discussed. | 2009-01-01 |
20090004774 | METHOD OF MULTI-CHIP PACKAGING IN A TSOP PACKAGE - A method of fabricating a semiconductor package, and a semiconductor package formed thereby, are disclosed. The semiconductor package may include a leadframe having one or more semiconductor die and one or more passive components affixed thereon. The one or more passive components may be affixed by soldering with a solder material. In embodiments, in order to prevent bleeding of the solder material during a solder reflow process, barricades are formed on the surface of the leadframe, at least partially surrounding the one or more passive components. | 2009-01-01 |
20090004775 | METHODS FOR FORMING QUAD FLAT NO-LEAD (QFN) PACKAGES - Methods are provided for forming Quad Flat No-Lead (QFN) packages. An embodiment includes disposing an active side of a semiconductor chip on a plurality of leads, coupling a plurality of wire bonds to the active side of the semiconductor chip, coupling the plurality of wire bonds to the plurality of leads in a space between the active side and the plurality of leads, and encasing the semiconductor chip, at least a portion of each of the plurality of leads, and the plurality of wire bonds in a mold material to define a mounting side of the QFN package. The mounting side has a perimeter, the plurality of leads are oriented on and exposed on the mounting side within the perimeter, and the plurality of wire bonds are oriented between the active side and the mounting side within the mold material. | 2009-01-01 |
20090004776 | METHOD OF FABRICATING A MEMORY CARD USING SIP/SMT HYBRID TECHNOLOGY - A portable memory card formed from a multi-die assembly, and methods of fabricating same, are disclosed. One such multi-die assembly includes an LGA SiP semiconductor package and a leadframe-based SMT package both affixed to a PCB. The multi-die assembly thus formed may be encased within a standard lid to form a completed portable memory card, such as a standard SD™ card. Test pads on the LGA SiP package, used for testing operation of the package after it is fabricated, may also be used for physically and electrically coupling the LGA SiP package to the PCB. | 2009-01-01 |
20090004777 | Stacked die semiconductor package and method of assembly - A method of manufacturing a plurality of stacked die semiconductor packages, including: attaching a second silicon wafer to a first silicon wafer, wherein the second silicon wafer has a plurality of open vias; attaching a third silicon wafer to the second silicon wafer, wherein the third silicon wafer has a plurality of open vias, and the open vias of the second and third silicon wafers are aligned with one another; etching a bonding material that attaches the wafers from the aligned open vias; filling the aligned open vias with a conductor; forming conductive bumps at open ends of the aligned open vias; back grinding the first silicon wafer; separating the stacked semiconductor dies from each other; attaching the bump end of the stacked semiconductor dies onto a substrate; encapsulating the stacked semiconductor dies and substrate; and singulating the encapsulated assembly. | 2009-01-01 |
20090004778 | Manufacturing Method of Light Emitting Diode - Disclosed is a manufacturing method of a light emitting diode. The manufacturing method comprises the steps of preparing a substrate and mounting light emitting chips on the substrate. An intermediate plate is positioned on the substrate. The intermediate plate has through-holes for receiving the light emitting chips and grooves for connecting the through-holes to one another on its upper surface. A transfer molding process is performed with a transparent molding material by using the grooves as runners to form first molding portions filling the through-holes. Thereafter, the intermediate plate is removed, and the substrate is separated into individual light emitting diodes. Accordingly, it is possible to provide a light emitting diode in which the first molding portion formed through a transfer molding process is positioned within a region encompassed by cut surfaces of the substrate. Since the first molding portion is positioned within the region encompassed by the cut surfaces of the substrate, second molding portions can be symmetrically formed on the side surfaces of the first molding portions in various manners. | 2009-01-01 |
20090004779 | FABRICATION METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A method of fabricating a semiconductor integrated circuit device uses a mold which is provided with a plurality of air vents and movable pins which are formed such that the movable pins include grooves in the distal ends thereof which project into the air vents. By clamping the mold in a state such that the distal ends of the movable pins are pushed against a multi-cavity board at the time of clamping the mold, resin can be filled while leaking air inside the cavity through the grooves formed in the distal ends of the movable pins by setting the depths of the respective air vents to a fixed value irrespective of the irregularities in thickness of the multi-cavity boards. Accordingly, it is possible to prevent insufficient filling of resin in the cavity, the leaking of resin or defective welding, whereby the yield rate of products can be enhanced. | 2009-01-01 |
20090004780 | Method for Fabricating Semiconductor Chip - After a film layer | 2009-01-01 |
20090004781 | METHOD OF FABRICATING A SEMICONDUCTOR DIE HAVING A REDISTRIBUTION LAYER - A semiconductor device having a redistribution layer, and methods of forming same, are disclosed. After fabrication of semiconductor die on a wafer, a tape assembly is applied onto a surface of the wafer, in contact with the surfaces of each semiconductor die on the wafer. The tape assembly includes a backgrind tape as a base layer, and a film assembly adhered to the backgrind tape. The film assembly in turn includes an adhesive film on which is deposited a thin layer of conductive material. The redistribution layer pattern is traced into the tape assembly, using for example a laser. Thereafter, the unheated portions of the tape assembly may be removed, leaving the heated redistribution layer pattern on each semiconductor die. | 2009-01-01 |
20090004782 | METHOD OF FABRICATING A TWO-SIDED DIE IN A FOUR-SIDED LEADFRAME BASED PACKAGE - A method of fabricating a leadframe-based semiconductor package, and a semiconductor package formed thereby, are disclosed. In embodiments, a semiconductor die having die bond pads along two adjacent edges may be electrically coupled to four sides of a four-sided leadframe. Embodiments relate to lead and no-lead type leadframe. | 2009-01-01 |
20090004783 | METHOD OF PACKAGE STACKING USING UNBALANCED MOLDED TSOP - A semiconductor package assembly is disclosed including a pair of stacked leadframe-based semiconductor packages. The first package is encapsulated in a mold compound so that the electrical leads emanate from the sides of the package, near a bottom surface of the package. The first package may be stacked atop the second package by aligning the exposed leads of the first package with the exposed leads of the second package and affixing the respective leads of the two packages together. The vertical offset of leads toward a bottom of the first package provides a greater overlap with leads of the second package, thus allowing a secure bonding of the leads of the respective packages. | 2009-01-01 |
20090004784 | METHOD FOR FABRICATING SEMICONDUCTOR PACKAGE FREE OF SUBSTRATE - A semiconductor package and a fabrication method thereof are provided in which a dielectric material layer formed with a plurality of openings is used and a solder material is applied into each of the openings. A first copper layer and a second copper layer are in turn deposited over the dielectric material layer and solder materials, and the first and second copper layers are patterned to form a plurality of conductive traces each of which has a terminal coated with a metal layer. A chip is mounted on the conductive traces and electrically connected to the terminals by bonding wires, with the dielectric material layer and solder materials being exposed to the outside. This package structure can flexibly arrange the conductive traces and effectively shorten the bonding wires, thereby improve trace routability and quality of electrical connection for the semiconductor package. | 2009-01-01 |
20090004785 | METHOD OF FABRICATING A SEMICONDUCTOR PACKAGE HAVING THROUGH HOLES FOR MOLDING BACK SIDE OF PACKAGE - A portable memory card and methods of manufacturing same are disclosed. The portable memory includes a substrate having a plurality of holes formed therein. During the encapsulation process, mold compound flows over the top surface of the substrate, through the holes, and down into a recessed section formed in the bottom mold cap plate to form a projection of mold compound on the bottom surface of the substrate. | 2009-01-01 |
20090004786 | METHOD FOR FABRICATING A 3-D INTEGRATED CIRCUIT USING A HARD MASK OF SILICON-OXYNITRIDE ON AMORPHOUS CARBON - A method for fabricating a 3-D monolithic memory device. Silicon-oxynitride (Si | 2009-01-01 |
20090004787 | THIN FILM TRANSISTOR ARRAY PANEL FOR LIQUID CRYSTAL DISPLAY - There are provided two subpixels opposite each other with respect to each data line. A pair of gate lines are provided for each row of pixels. A plurality of subsidiary signal lines are provided between the adjoining columns of the pixels. The data lines and the subsidiary signal lines are alternately arranged between the adjoining columns of the pixels. A storage wire is provided between the adjoining rows of the pixel 12+66s. | 2009-01-01 |
20090004788 | THIN FILM TRANSISTORS AND FABRICATION METHODS - A method of fabricating a low temperature semiconductor thin film device is described. The method includes: forming one or more metal lines on a substrate; forming a conductive contact to a said metal line; forming a thin film device having: a first amorphous silicon region, wherein a portion of the region covers a said conductive contact; and a gate dielectric layer; and a second amorphous silicon layer; forming a silicide of first and second amorphous silicon material with a deposited metallic material; depositing an insulating material; and forming conductive contacts and top metal interconnects to couple said first and second amorphous silicon regions. | 2009-01-01 |
20090004789 | METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING STACKED TRANSISTORS - There is provided a method of forming a semiconductor device having stacked transistors. When forming a contact hole for connecting the stacked transistors to each other, ohmic layers on the bottom and the sidewall of the common contact hole are separately formed. As a result, the respective ohmic layers are optimally formed to meet requirements or conditions. Accordingly, the contact resistance of the common contact may be minimized so that it is possible to enhance the speed of the semiconductor device. | 2009-01-01 |
20090004790 | METHOD FOR MANUFACTURING JUNCTION SEMICONDUCTOR DEVICE - A method for manufacturing a junction semiconductor device having a drain region including a low-resistance layer of a first conductive type formed on one surface of a semiconductor crystal, a source region including a low-resistance layer of a first conductive type formed on the other surface of the semiconductor crystal, a gate region of a second conductive type formed on the periphery of the source region, a high-resistance layer of a first conductive type between the source region and the drain region, and a recombination-inhibiting semiconductor layer of a second conductive type provided in the vicinity of the surface of the semiconductor crystal between the gate region and the source region. | 2009-01-01 |
20090004791 | SEMICONDUCTOR SWITCHING DEVICES AND FABRICATION METHODS - Methods of fabricating low temperature semiconductor thin film switching devices are described. A method includes: forming one or more metal lines on a substrate; forming a conductive contact to a said metal line thru an insulator layer above the metal lines; forming a thin film N-type and P-type conducting transistor pair having: a contiguous amorphous silicon first geometry above the insulator layer, said first geometry including an N-type transistor region, a P-type transistor region, and a common region between the transistor regions fully covering the contact; and a gate dielectric layer above the first geometry; and a contiguous amorphous silicon second geometry above the gate dielectric layer including transistor regions that cross over the first geometry transistor regions; forming a silicide of first and second amorphous silicon geometry surfaces with a deposited metallic material, the silicided surfaces including: said second geometry surface; and said first geometry surface not covered by the second geometry, which includes the surface of the region covering the contact; depositing an insulating material; and forming conductive contacts and top metal interconnects. | 2009-01-01 |
20090004792 | METHOD FOR FORMING A DUAL METAL GATE STRUCTURE - A method for forming a semiconductor structure includes forming a channel region layer over a semiconductor layer where the semiconductor layer includes a first and a second well region, forming a protection layer over the channel region layer, forming a first gate dielectric layer over the first well region, forming a first metal gate electrode layer over the first gate dielectric, removing the protection layer, forming a second gate dielectric layer over the channel region layer, forming a second metal gate electrode layer over the second gate dielectric layer, and forming a first gate stack including a portion of each of the first gate dielectric layer and the first metal gate electrode layer over the first well region and forming a second gate stack including a portion of each of the second gate dielectric layer and the second metal gate electrode layer over the channel region layer. | 2009-01-01 |
20090004793 | METHOD OF FORMING CONTACT PLUGS - A method of forming cell bitline contact plugs is disclosed in the present invention. After providing a semiconductor substrate with a first region and a second region, cell bitline contacts are formed at the first region. After forming bitline pattern openings at the second region, poly spacers are formed on sidewalls of the cell bitline contacts and the bitline pattern openings. A substrate contact and a gate contact are then formed within the openings at the second region. After forming a trench around each of the substrate contact and the gate contact by performing an etching process, cell-bitline contact plugs, a substrate contact plug, and a gate contact plug are formed. | 2009-01-01 |
20090004794 | USE OF DILUTE STEAM AMBIENT FOR IMPROVEMENT OF FLASH DEVICES - The present invention provides a flash memory integrated circuit and a method for fabricating the same. The method includes etching a gate stack that includes an initial oxide layer directly in contact with a silicon layer, defining an oxide-silicon interface therebetween. By exposing the etched gate stack to elevated temperatures and a dilute steam ambient, additional oxide material is formed substantially uniformly along the oxide-silicon interface. Polysilicon grain boundaries at the interface are thereby passivated after etching. In the preferred embodiment, the interface is formed between a tunnel oxide and a floating gate, and passivating the grain boundaries reduces erase variability due to enhanced charge transfer along grain boundaries. At the same time, oxide in an upper storage dielectric layer (oxide-nitride-oxide or ONO) is enhanced in the dilute steam oxidation. Thermal budget can be radically conserved by growing thin oxide layers on either side of a nitride layer prior to etching, and enhancing the oxide layers by dilute steam oxidation through the exposed sidewall after etching. The thin oxide layers, like the initial tunnel oxide, serve as diffusion paths to enhance uniform distribution of OH species across the buried interfaces being oxidized. | 2009-01-01 |
20090004795 | METHOD OF MANUFACTURING FLASH MEMORY DEVICE - A method of manufacturing a flash memory device that prevents generation of voids when forming an interlayer dielectric film. The method may include forming a gate on a semiconductor substrate, and then sequentially stacking a first dielectric film and a second dielectric film on the semiconductor substrate, and then forming a first spacer comprising a first dielectric film pattern and a second dielectric film pattern on sidewalls of the gate by performing a first etching process, and then forming source and drain areas in the semiconductor substrate, and then removing the second dielectric film, and then sequentially stacking a third dielectric film and a fourth dielectric film on the semiconductor substrate, and then forming a second spacer comprising the first dielectric pattern and a third dielectric pattern on the sidewalls of the gate by performing a second etching process, and then forming an interlayer dielectric film on the semiconductor substrate including the gate and the first spacer. | 2009-01-01 |
20090004796 | METHOD OF MANUFACTURING NON-VOLATILE MEMORY - A method of manufacturing a non-volatile memory includes providing a substrate and forming a patterned mask layer, a tunnel dielectric layer, and a first conductive layer on the substrate. The first conductive layer on the mask layer is removed to form second conductive layers disposed on the sidewall of the mask layer and the substrate. The mask layer is then removed and a source region is formed. Subsequently, an inter-gate dielectric layer and a third conductive layer are formed on the substrate. The third conductive layer is patterned to cover the source region and a portion of the second conductive layer on both sides of the source region. A portion of the inter-gate dielectric layer and the second conductive layers are then removed. After that, a dielectric layer, a fourth conductive layer, and a drain region are formed, respectively. | 2009-01-01 |
20090004797 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device includes forming a plurality of pillars which are arranged on a substrate in a first direction and a second direction that intersects the first direction, thereby forming a resulting structure, forming a capping layer on the resulting structure including the pillars, removing the capping layer formed on the substrate between the pillars to expose the substrate between the pillars, thereby forming a resulting structure, forming a metal layer on the resulting structure, forming a silicide layer on the exposed substrate between the pillars by applying a first heat treatment to the metal layer, removing a non-reacted silicide layer, and forming an isolation trench in the substrate which is between rows of the pillars arranged in the first direction and is under the silicide layer to define bit lines which surround the pillars and are extended to the first direction. | 2009-01-01 |
20090004798 | Recessed Gate Structure With Stepped Profile - Disclosed herein are a recess-gate structure in which junctions have a thickness significantly smaller than the thickness of a device isolation layer to thereby prevent shorting of the junctions located at opposite lateral sides of the device isolation layer close thereto, resulting in an improvement in the operational reliability of a resultant device, and a method for forming the same. The recess-gate structure comprises a silicon substrate in which an active region and a device isolation region are defined, a plurality of gates formed on the substrate, gate spacers formed at the side wall of the respective gates, and junctions formed in the substrate at opposite lateral sides of the gates and defining an asymmetrical structure relative to each other. A gate recess is defined in the active region of the substrate to have a stepped profile consisting of a bottom plane, top plane, and vertical plane. The bottom plane of the stepped gate recess exists in only the active region except for the device isolation region. | 2009-01-01 |
20090004799 | METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING A FORMATION OF AT LEAST ONE SIDEWALL SPACER STRUCTURE - According to an illustrative example, a method of forming a semiconductor structure comprises providing a semiconductor substrate comprising a first feature and a second feature. A material layer is formed over the first feature and the second feature. A mask is formed over the first feature. At least one etch process adapted to form a sidewall spacer structure adjacent the second feature from a portion of the material layer is performed. The mask protects a portion of the material layer over the first feature from being affected by the at least one etch process. An ion implantation process is performed. The mask remains over the first feature during the ion implantation process. | 2009-01-01 |
20090004800 | Methods of manufacturing semiconductor devices - In a method of manufacturing a semiconductor device, a conductive layer pattern may be formed on a substrate. An oxide layer may be formed on the substrate to cover the conductive layer pattern. A diffusion barrier layer may be formed by treating the oxide layer to increase an energy required for a diffusion of impurities. An impurity region may be formed on the substrate by implanting impurities into the conductive layer pattern and a portion of the substrate adjacent to the conductive layer pattern, through the diffusion barrier. The impurities in the conductive layer pattern and the impurity region may be prevented or reduced from diffusing, and therefore, the semiconductor device may have improved performance. | 2009-01-01 |
20090004801 | Method of forming lutetium and lanthanum dielectric structures - Methods of forming dielectric structures are shown. Methods of forming dielectric structures are shown that include lutetium oxide and lanthanum aluminum oxide crystals embedded within the lutetium oxide. Specific methods shown include monolayer deposition which yields process improvements such as chemistry control, step coverage, crystallinity/microstructure control. | 2009-01-01 |
20090004802 | METHOD OF FABRICATING NON-VOLATILE MEMORY DEVICE HAVING CHARGE TRAPPING LAYER - A method of fabricating a non-volatile memory device having a charge trapping layer includes forming a tunneling layer, a charge trapping layer, a blocking layer and a control gate electrode layer over a substrate, forming a mask layer pattern on the control gate electrode layer, performing an etching process using the mask layer pattern as an etching mask to remove an exposed portion of the control gate electrode layer, wherein the etching process is performed as excessive etching to remove the charge trapping layer by a specified thickness, forming an insulating layer for blocking charges from moving on the control gate electrode layer and the mask layer pattern, performing anisotropic etching on the insulating layer to form an insulating layer pattern on a sidewall of the control gate electrode layer and a partial upper sidewall of the blocking layer, and performing an etching process on the blocking layer exposed by the anisotropic etching, wherein the etching process is performed as excessive etching to remove the charge trapping layer by a specified thickness. | 2009-01-01 |
20090004803 | MULTI-STAGE IMPLANT TO IMPROVE DEVICE CHARACTERISTICS - One aspect of the inventors' concept relates to a method of forming a semiconductor device. In this method, a gate structure is formed over a semiconductor body. A source/drain mask is patterned over the semiconductor body implanted source and drain regions are formed that are associated with the gate structure. After forming the implanted source and drain regions, a multi-stage implant is performed on the source and drain regions that comprises at least two implants where the dose and energy of the first implant varies from the dose and energy of the second implant. Other methods and devices are also disclosed. | 2009-01-01 |
20090004804 | METHOD OF FABRICATING SEMICONDUCTOR DEVICES - A method of fabricating a semiconductor device may include forming a well in a semiconductor substrate, and then forming a gate oxide on and/or over the semiconductor substrate, and then forming a gate on and/or over the gate oxide, and then forming a pocket under the gate, and then performing a first spike anneal on the semiconductor substrate, and then performing a deep source/drain implant process on the semiconductor substrate, and then performing a second spike anneal on the semiconductor substrate. | 2009-01-01 |
20090004805 | Damage Implantation of a Cap Layer - A method for fabricating a transistor on a semiconductor wafer includes providing a partial transistor containing a gate stack, extension regions, and source/drain sidewalls. The method also includes performing a source/drain implant of the semiconductor wafer, forming a cap layer over the semiconductor wafer, and performing a source/drain anneal. In addition, the method includes performing a damage implant of the cap layer and removing the cap layer over the semiconductor wafer. | 2009-01-01 |
20090004806 | NOISE REDUCTION IN SEMICONDUCTOR DEVICE USING COUNTER-DOPING - One or more embodiments describe a method of fabricating a silicon based metal oxide semiconductor device, comprising: implanting a first dopant into a first partial completion of the device, the first dopant comprising a first noise reducing species; and implanting a second dopant into a second partial completion of the device, the second dopant and the first dopant being opposite conductivity types. | 2009-01-01 |
20090004807 | PASSIVE ELEMENTS, ARTICLES, PACKAGES, SEMICONDUCTOR COMPOSITES, AND METHODS OF MANUFACTURING SAME - Systems and methods associated with semiconductor articles are disclosed, including forming a first layer of material on a substrate, etching trenches within regions defining a passive element in the first layer, forming metal regions on sidewalls of the trenches, and forming a region of dielectric or polymer material over or in the substrate. Moreover, an exemplary method may also include forming areas of metal regions on the sidewalls of the trenches such that planar strip portions of the areas form electrically conductive regions of the passive element(s) that are aligned substantially perpendicularly with respect to a primary plane of the substrate. Other exemplary embodiments may comprise various articles or methods including capacitive and/or inductive aspects, Titanium- and/or Tantalum-based resistive aspects, products, products by processes, packages and composites consistent with one or more aspects of the innovations set forth herein. | 2009-01-01 |