| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 850026000 | Scanning Tunnelling Microscopy [STM] or apparatus therefor, e.g., STM probes (EPO) | 15 |
| 20090241232 | Prototyping station for atomic force microscope-assisted deposition of nanostructures - A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized. | 09-24-2009 |
| 20090300805 | Photon-Emission Scanning Tunneling Microscopy - The present invention relates to an indirect-gap semiconductor substrate, the gap being greater than that of silicon and preferably greater than 1.5 eV, to its use for imaging a specimen by photon-emission scanning tunnel microscopy, and to a photon-emission scanning tunnel imaging method using such an indirect-gap semiconductor substrate. Advantageously, the indirect-gap semiconductor substrate is made of silicon carbide. The present invention also relates to devices for implementing the imaging method according to the invention. | 12-03-2009 |
| 20100064395 | Monolithic Comb Drive System and method for Large-Deflection Multi-Dof Microtransduction - A scanning probe microscope includes a plate moveable in an x-axis direction, a y-axis direction, and a z-axis direction, and a probe tip coupled to the plate. A plurality of actuators cooperate to move the probe tip with three degrees of freedom of movement. | 03-11-2010 |
| 20100263097 | METHOD FOR EXAMINING A SAMPLE - Disclosed is a method for examining a sample using a scanning tunneling microscope, wherein before or during image recording, a contrast agent is applied to at least one location on the tip of the scanning tunneling microscope and/or on the sample, which is part of the tunneling contact during the image recording, while a temperature less than or equal to the condensation temperature of the contrast agent is set at this location. A corresponding scanning tunneling microscope is disclosed. | 10-14-2010 |
| 20110126328 | Methods and Apparatus for Nanolapping - A lapping system for lapping portions of a workpiece. The lapping system includes, a lap that is defined by a surface. Portions of the surface are a lapping surface. The lapping surface has a coating that enhances material removal from a workpiece in a lapping process. The lapping system further includes, a scanning probe microscope having a tip and a substrate. The scanning probe microscope controls lapping motion of the lap and workpiece. | 05-26-2011 |
| 20120137396 | Characterizing Dimensions of Structures Via Scanning Probe Microscopy - A method comprising characterizing the dimensions of structures on a semiconductor device having dimensions less than approximately 100 nanometers (nm) using one of scanning probe microscopy (SPM) or profilometry. | 05-31-2012 |
| 20120151638 | METHOD FOR MEASURING THE FORCE INTERACTION THAT IS CAUSED BY A SAMPLE - Disclosed is a method for measuring the force interaction caused by a sample, wherein a bias voltage, with respect to the sample, is applied between a tip, and the tip is guided at such a small distance to the sample that a measurable current flows between the tip and the sample, and a sensor and signal converter S, which changes the current flowing through the tip-sample contact depending on the intensity of the force interaction, is formed and used in the region of the force interaction. A scanning tunneling microscope therefor is disclosed. | 06-14-2012 |
| 20120284882 | Prototyping Station for Atomic Force Microscope-Assisted Deposition of Nanostructures - A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized. | 11-08-2012 |
| 20130097740 | Scanning probe microscopy-based metrology tool with a vacuum partition - A method of monitoring of semiconductor processes is provided that includes monitoring the processes using a scanning probe microscope (SPM), where a first partition is located below a second partition, where the second partition is hermetically isolated from the first partition, where a SPM probe tip of the SPM is disposed in the first partition, where a remaining portion of the SPM is disposed in the second partition that is hermetically isolated from the first partition, and where the semiconductor processes may occur in either the first partition or a third partition. | 04-18-2013 |
| 20130212751 | GENERATION OF A FREQUENCY COMB AND APPLICATIONS THEREOF - Apparatus for generating a microwave frequency comb (MFC) in the DC tunneling current of a scanning tunneling microscope (STM) by fast optical rectification, caused by nonlinearity of the DC current vs. voltage curve for the tunneling junction, of regularly-spaced, short pulses of optical radiation from a focused mode-locked, ultrafast laser, directed onto the tunneling junction, is described. Application of the MFC to high resolution dopant profiling in semiconductors is simulated. Application of the MFC to other measurements is described. | 08-15-2013 |
| 20150047079 | Iridium Tip, Gas Field Ion Source, Focused Ion Beam Apparatus, Electron Source, Electron Microscope, Electron Beam Applied Analysis Apparatus, Ion-Electron Multi-Beam Apparatus, Scanning Probe Microscope, and Mask Repair Apparatus - There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus. | 02-12-2015 |
| 20090241232 | Prototyping station for atomic force microscope-assisted deposition of nanostructures - A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized. | 09-24-2009 |
| 20090300805 | Photon-Emission Scanning Tunneling Microscopy - The present invention relates to an indirect-gap semiconductor substrate, the gap being greater than that of silicon and preferably greater than 1.5 eV, to its use for imaging a specimen by photon-emission scanning tunnel microscopy, and to a photon-emission scanning tunnel imaging method using such an indirect-gap semiconductor substrate. Advantageously, the indirect-gap semiconductor substrate is made of silicon carbide. The present invention also relates to devices for implementing the imaging method according to the invention. | 12-03-2009 |
| 20100064395 | Monolithic Comb Drive System and method for Large-Deflection Multi-Dof Microtransduction - A scanning probe microscope includes a plate moveable in an x-axis direction, a y-axis direction, and a z-axis direction, and a probe tip coupled to the plate. A plurality of actuators cooperate to move the probe tip with three degrees of freedom of movement. | 03-11-2010 |
| 20100263097 | METHOD FOR EXAMINING A SAMPLE - Disclosed is a method for examining a sample using a scanning tunneling microscope, wherein before or during image recording, a contrast agent is applied to at least one location on the tip of the scanning tunneling microscope and/or on the sample, which is part of the tunneling contact during the image recording, while a temperature less than or equal to the condensation temperature of the contrast agent is set at this location. A corresponding scanning tunneling microscope is disclosed. | 10-14-2010 |
| 20110126328 | Methods and Apparatus for Nanolapping - A lapping system for lapping portions of a workpiece. The lapping system includes, a lap that is defined by a surface. Portions of the surface are a lapping surface. The lapping surface has a coating that enhances material removal from a workpiece in a lapping process. The lapping system further includes, a scanning probe microscope having a tip and a substrate. The scanning probe microscope controls lapping motion of the lap and workpiece. | 05-26-2011 |
| 20120137396 | Characterizing Dimensions of Structures Via Scanning Probe Microscopy - A method comprising characterizing the dimensions of structures on a semiconductor device having dimensions less than approximately 100 nanometers (nm) using one of scanning probe microscopy (SPM) or profilometry. | 05-31-2012 |
| 20120151638 | METHOD FOR MEASURING THE FORCE INTERACTION THAT IS CAUSED BY A SAMPLE - Disclosed is a method for measuring the force interaction caused by a sample, wherein a bias voltage, with respect to the sample, is applied between a tip, and the tip is guided at such a small distance to the sample that a measurable current flows between the tip and the sample, and a sensor and signal converter S, which changes the current flowing through the tip-sample contact depending on the intensity of the force interaction, is formed and used in the region of the force interaction. A scanning tunneling microscope therefor is disclosed. | 06-14-2012 |
| 20120284882 | Prototyping Station for Atomic Force Microscope-Assisted Deposition of Nanostructures - A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized. | 11-08-2012 |
| 20130097740 | Scanning probe microscopy-based metrology tool with a vacuum partition - A method of monitoring of semiconductor processes is provided that includes monitoring the processes using a scanning probe microscope (SPM), where a first partition is located below a second partition, where the second partition is hermetically isolated from the first partition, where a SPM probe tip of the SPM is disposed in the first partition, where a remaining portion of the SPM is disposed in the second partition that is hermetically isolated from the first partition, and where the semiconductor processes may occur in either the first partition or a third partition. | 04-18-2013 |
| 20130212751 | GENERATION OF A FREQUENCY COMB AND APPLICATIONS THEREOF - Apparatus for generating a microwave frequency comb (MFC) in the DC tunneling current of a scanning tunneling microscope (STM) by fast optical rectification, caused by nonlinearity of the DC current vs. voltage curve for the tunneling junction, of regularly-spaced, short pulses of optical radiation from a focused mode-locked, ultrafast laser, directed onto the tunneling junction, is described. Application of the MFC to high resolution dopant profiling in semiconductors is simulated. Application of the MFC to other measurements is described. | 08-15-2013 |
| 20150047079 | Iridium Tip, Gas Field Ion Source, Focused Ion Beam Apparatus, Electron Source, Electron Microscope, Electron Beam Applied Analysis Apparatus, Ion-Electron Multi-Beam Apparatus, Scanning Probe Microscope, and Mask Repair Apparatus - There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus. | 02-12-2015 |
| 850027000 | Scanning Tunnelling Spectroscopy [STS] (EPO) | 1 |
| 20140345007 | MEASUREMENT OF DEPTH AND ENERGY OF BURIED TRAP STATES IN DIELECTRIC FILMS BY SINGLE ELECTRON TUNNELING FORCE SPECTROSCOPY - A single electron tunneling force spectroscopy (SETFS) system ( | 11-20-2014 |
| 20140345007 | MEASUREMENT OF DEPTH AND ENERGY OF BURIED TRAP STATES IN DIELECTRIC FILMS BY SINGLE ELECTRON TUNNELING FORCE SPECTROSCOPY - A single electron tunneling force spectroscopy (SETFS) system ( | 11-20-2014 |
| 850028000 | Scanning tunnelling potentiometry [STP] (EPO) | 1 |
| 20110289636 | HIGH-SPEED SCANNING PROBE MICROSCOPE - The invention is directed to a probe for scanning probe microscopy. The probe | 11-24-2011 |
| 20110289636 | HIGH-SPEED SCANNING PROBE MICROSCOPE - The invention is directed to a probe for scanning probe microscopy. The probe | 11-24-2011 |
| 850029000 | Probes, their manufacture, or their related instrumentation, e.g., holders (EPO) | 2 |
| 20140259235 | SIMULTANEOUS TOPOGRAPHIC AND ELEMENTAL CHEMICAL AND MAGNETIC CONTRAST IN SCANNING TUNNELING MICROSCOPY - A method and system for performing simultaneous topographic and elemental chemical and magnetic contrast analysis in a scanning, tunneling microscope. The method and system also includes nanofabricated coaxial multilayer tips with a nanoscale conducting apex and a programmable in-situ nanomanipulator to fabricate these tips and also to rotate tips controllably. | 09-11-2014 |
| 20150026847 | RADIO-FREQUENCY REFLECTOMETRY SCANNING TUNNELING MICROSCOPE - An RF reflectometry scanning tunneling microscope is suitable for observing a surface of an object, and includes a probe that cooperates with the object to form a tunneling resistor therebetween, an RF resonant circuit that cooperates with the tunneling resistor to form a LCR resonant circuit including an inductor connected to a parallel connection of a capacitor, a resistor and the tunneling resistor, a directional coupler receiving an RF signal and outputting the RF signal to the LCR resonant circuit, and an RF signal measuring device that generates a scanning result associated with the surface of the object based on a reflected RF signal resulting from reflection of the RF signal by the LCR resonant circuit. | 01-22-2015 |
| 20140259235 | SIMULTANEOUS TOPOGRAPHIC AND ELEMENTAL CHEMICAL AND MAGNETIC CONTRAST IN SCANNING TUNNELING MICROSCOPY - A method and system for performing simultaneous topographic and elemental chemical and magnetic contrast analysis in a scanning, tunneling microscope. The method and system also includes nanofabricated coaxial multilayer tips with a nanoscale conducting apex and a programmable in-situ nanomanipulator to fabricate these tips and also to rotate tips controllably. | 09-11-2014 |
| 20150026847 | RADIO-FREQUENCY REFLECTOMETRY SCANNING TUNNELING MICROSCOPE - An RF reflectometry scanning tunneling microscope is suitable for observing a surface of an object, and includes a probe that cooperates with the object to form a tunneling resistor therebetween, an RF resonant circuit that cooperates with the tunneling resistor to form a LCR resonant circuit including an inductor connected to a parallel connection of a capacitor, a resistor and the tunneling resistor, a directional coupler receiving an RF signal and outputting the RF signal to the LCR resonant circuit, and an RF signal measuring device that generates a scanning result associated with the surface of the object based on a reflected RF signal resulting from reflection of the RF signal by the LCR resonant circuit. | 01-22-2015 |
