| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 556064000 | Arsenic, antimony, or bismuth containing (As, Sb, or Bi) | 8 |
| 20100041907 | HYDRAZINE-FREE SOLUTION DEPOSITION OF CHALCOGENIDE FILMS - A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer. | 02-18-2010 |
| 20160060277 | IONIC LIQUID COMPOUND - The present disclosure provides an ionic liquid compound of Formula (I) and its application in reactions such as alkylation, arylation, acylation, diels alder and oligomerization, | 03-03-2016 |
| 556069000 | Sulfur double bonded directly to chalcogen | 1 |
| 20110034716 | SULFONYLIMIDE SALT AND METHOD FOR PRODUCING THE SAME - The present invention provides a method for producing fluorosulfonylimides more safely, rapidly and efficiently, which enables suppression of production of by-products, and fluorosulfonylimides. The method for producing a fluorosulfonylimide salt of the present invention includes a step of reacting a fluoride compound containing at least one element selected from the group consisting of elements of Group 11 to Group 15 and Period 4 to Period 6 (excluding arsenic and antimony) with a compound represented by the following general formula (I) to give a fluorosulfonylimide salt represented by the general formula (II): | 02-10-2011 |
| 556070000 | Carbon bonded directly to the metal | 4 |
| 20090247775 | PROCESS FOR THE PREPARATION OF HYDROCARBYL HALIDES - Described is a process for the preparation of hydrocarbyl metal halides, such as alkyl tin chlorides, in which a reaction between the metal in its metallic state and a hydrocarbyl halide is catalyzed by a dihydrocarbyl sulfoxide or a dihydrocarbyl formamide in the presence of a hydrocarbyl metal halide and wherein the pressure of the reaction vessel is varied during the reaction. | 10-01-2009 |
| 20100286424 | METHOD OF DETOXIFYING A HARMFUL COMPOUND - It is an object of the present invention to provide a beneficial method of detoxifying a harmful compound in order to detoxify the harmful compound containing arsenic etc. effectively. | 11-11-2010 |
| 20110178319 | METHOD FOR MAKING HARMFUL COMPOUND HARMLESS AND METHOD FOR PRODUCING ORGANIC SEMICONDUCTOR ELEMENT COMPOUND - The present invention provides a method for making a harmful arsenic compound, antimony compound and selenium compound harmless by using an organic cobalt complex, in which the cost of the method can be improved. The present invention is a method for making a harmful compound harmless, including irradiating light to an organic cobalt complex containing cobalt as a central metal and a corrin ring as a ligand, a methyl group donor, a titanium oxide photocatalyst, and a harmful compound containing an arsenic atom, an antimony atom or a selenium atom to methylate the harmful compound. In the present invention, it is preferable that the harmful compound be trimethylated. | 07-21-2011 |
| 20130184481 | ORGANOMETALLIC COMPOUND PURIFICATION - A method of purifying crude organometallic compounds using a plurality of distillation columns is provided. This method effectively removes both relatively more volatile impurities and relatively less volatile impurities as compared to the organometallic compound. | 07-18-2013 |
| 556076000 | Chalcogen bonded directly to the metal | 1 |
| 20100010249 | LITHIUM SALT - The principal object of the invention is to provide a lithium salt having excellent ion conductivity. The invention solves the problem by providing a lithium salt having a structure represented by the general formula (1): in which “M” represents B, Si, Ge, P, As or Sb; “X” represents the valence of “M”; “R | 01-14-2010 |
