Entries |
Document | Title | Date |
20080200360 | Aqueous Solution and Method for Removing Ionic Contaminants from the Surface of a Workpiece - To reduce ionic contaminants on printed circuit boards that are at least partially covered with a solder resist mask and are provided with top layers on the copper structures, an aqueous cleaning solution is used, which contains at least one ethanolamine compound and/or the salt thereof, at least one alcoholic solvent and, at need, at least one guanidine compound and/or the salt thereof. | 08-21-2008 |
20080200361 | AQUEOUS CLEANER WITH LOW METAL ETCH RATE - A cleaning solution is provided for cleaning metal-containing microelectronic substrates, particularly for post etch, via formation and post CMP cleaning. The cleaning solution consists of a quaternary ammonium hydroxide, an organic amine, and water. A preferred cleaning solution consists of tetramethylammonium hydroxide, monoethanolamine, and water. The pH of cleaning solution is greater than 10. | 08-21-2008 |
20080221004 | Cleaning Solution for a Semiconductor Wafer - A cleaning solution for a semiconductor wafer comprises ammonia, hydrogen peroxide, a complexing agent and a block copolymer surfactant diluted in water. The cleaning solution can be used in single wafer cleaning tools to remove both particulate contaminants and metallic residues. | 09-11-2008 |
20080234162 | SEMICONDUCTOR ETCH RESIDUE REMOVER AND CLEANSING COMPOSITIONS - An aqueous and semi-aqueous formulation useful for removing post etch and ash residue from Cu low K dielectric semiconductor devices. The composition comprises a polycarboxylic acid buffering system, a fluoride system, water, a water miscible organic solvent for the said aqueous compositions and optionally a chelating agent, a metal corrosion inhibitor and a surfactant. | 09-25-2008 |
20080234163 | SOLVENT FOR TREATING POLYSILAZANE AND METHOD OF TREATING POLYSILAZANE WITH THE SOLVENT - Polysilazane is treated with a single or mixed solvent comprising one or more members selected from the group consisting of xylene, anisole, decalin, cyclohexane, cyclohexene, methylcyclohexane, ethylcyclohexane, limonene, hexane, octane, nonane, decane, a C8-C11 alkane mixture, a C8-C11 aromatic hydrocarbon mixture, an aliphatic/alicyclic hydrocarbon mixture containing 5 to 25% by weight of C8 or more aromatic hydrocarbons, and dibutyl ether, wherein the number of 0.5 micron or more fine particles contained in 1 ml of the solvent is 50 or less. As the treatment of polysilazane, there are illustrated, for example, edge-rinsing and back rinsing of a polysilazane film formed by spin coating polysilazane on a semiconductor substrate. The water content of the solvent is preferably 100 ppm or less. | 09-25-2008 |
20080280803 | COMPOSITION FOR THE REMOVAL OF SIDEWALL RESIDUES - The present invention relates to a composition for the removal of so-called sidewall residues from metal surfaces, in particular from aluminium or aluminium-containing surfaces, during the production of semiconductor elements. | 11-13-2008 |
20080287332 | Method for Removing Etch Residue and Chemistry Therefor - A method for cleaning, especially by removing etch residue (e.g., polymers or particles) from a semiconductor structure, and a cleaning chemistry is described. The method of cleaning includes placing the semiconductor structure with an etch residue particle on it in a chemistry to remove the particle, wherein the active component of the chemistry consists of a carboxylic acid having equal numbers of COOH and OH groups. In one embodiment, the carboxylic acid is tartaric acid. In one embodiment, the chemistry further comprises water. | 11-20-2008 |
20090036343 | Aqueous Cleaning Composition For Semiconductor Copper Processing - The invention relates to an aqueous cleaning composition for use in a cleaning process during or after a chemical mechanical planarization for a copper integrated circuit processing, comprising 0.05 to 20 wt % of a nitrogen-containing heterocyclic organic base, 0.05 to 50 wt % of an alcohol amine, 0.01-10 wt % of a quaternary ammonium hydroxide, and water. When used during or after the planarization process, the inventive cleaning composition of the invention can effectively remove residual contaminants from the surfaces of the wafers and simultaneously maintain a good surface roughness of the wafers. | 02-05-2009 |
20090042762 | CLEANER COMPOSITION FOR REMOVAL OF LEAD-FREE SOLDERING FLUX, RINSING AGENT FOR REMOVAL OF LEAD-FREE SOLDERING FLUX, AND METHOD FOR REMOVAL OF LEAD-FREE SOLDERING FLUX - The present invention provides a cleaner composition that can satisfactorily remove lead-free soldering flux adhered to the object to be cleaned, has little impact on the environment, and has odor, inflammability, etc., which are of an acceptable level for practical use; a rinsing agent for rinsing the cleaned object after cleaning with the cleaner composition to remove lead-free soldering flux more effectively; and a removal method using the composition (and the rinsing agent). The cleaner composition for the removal of lead-free soldering flux contains:
| 02-12-2009 |
20090088361 | CLEANING AGENT FOR SEMICONDUCTOR DEVICE AND CLEANING METHOD USING THE SAME - The present invention provides a cleaning agent for cleaning a semiconductor device having copper wiring on the surface thereof following a chemical mechanical polishing process in a production process of a semiconductor device, including a compound represented by the following formula (I): | 04-02-2009 |
20090156452 | MATERIALS FOR PARTICLE REMOVAL BY SINGLE-PHASE AND TWO-PHASE MEDIA - The embodiments of the present invention provide improved materials for cleaning patterned substrates with fine features. The cleaning materials have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials. | 06-18-2009 |
20090170741 | Composition for Removing Polymer Residue of Photosensitive Etching-Resistant Layer - Provided is a composition for removing polymer residue of a photosensitive etching-resistant layer. The composition includes 0.1 to 80% by weight of a corrosion inhibitor shown in Formula 1; 10 to 80% by weight of a pH control agent of which hydrogen ion concentration is in a weak basic range; 0.1 to 2% by weight of ammonium fluoride; and the remaining percentage by weight of water. The composition for removing the polymer residue can effectively remove insoluble residue generated during a semiconductor fabrication process without inflicting damage on an underlying layer and contains environment-friendly components. | 07-02-2009 |
20090170742 | AQUEOUS CLEANING COMPOSITION - An aqueous cleaning composition for cleaning wafer contaminants after a chemical mechanical planarization process, includes: 0.1-20 wt % of an alkanolamine selected from the group consisting of 2-amino-1,3-propanediol, 2-amino-2-(hydroxymethyl)-1,3-propanediol, and combinations thereof; 0.05-20 wt % of a quaternary amine; and water. The cleaning composition is capable of removing efficiently residual contaminants from a polished surface of a wafer and imparting the wafer with a better surface roughness. | 07-02-2009 |
20090203566 | Semi Conductor Process Residue Removal Composition and Process - A composition that includes 2-(2-aminoethylamino)-ethanol, at least one of a chelating agent and a corrosion inhibitor, and water. The composition is capable of removing organic, organometallic and metal oxide residues from semiconductor substrates. The invention also relates to a method of removing etching residue from a semiconductor substrate. | 08-13-2009 |
20090215658 | OXIDIZING AQUEOUS CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES - An oxidizing aqueous cleaning composition and process for cleaning post-plasma etch residue and/or hardmask material from a microelectronic device having said residue thereon. The oxidizing aqueous cleaning composition includes at least one oxidizing agent, at least one oxidizing agent stabilizer comprising an amine species selected from the group consisting of primary amines, secondary amines, tertiary amines and amine-N-oxides, optionally at least one co-solvent, optionally at least one metal-chelating agent, optionally at least one buffering species, and water. The composition achieves highly efficacious cleaning of the residue material from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon. | 08-27-2009 |
20090239777 | ANTIOXIDANTS FOR POST-CMP CLEANING FORMULATIONS - An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. | 09-24-2009 |
20090247447 | REMOVING AGENT COMPOSITION AND REMOVING/CLEANING METHOD USING SAME - The present invention relates to a removal cleaning method for a semiconductor substrate or a semiconductor device with metal wirings by using a remover composition, wherein the remover composition contains a dissolution agent having an alumina dissolution amount as measured according to the standard test (A-1) of 10 ppm or more, and an inhibitor having an aluminum etching amount as measured according to the standard test (B-1) of 7 nm or less, and the remover composition substantially does not contain a fluorine-containing compound; a method of producing a semiconductor substrate or a semiconductor device, including the step involving the removal cleaning method; and a remover composition containing a specified acid, and a specified inorganic acid salt and/or organic acid salt. The removal cleaning method and the remover composition of the present invention can be suitably used for producing even higher-speed, even more highly integrated and high quality electronic parts such as LCDs, memories and CPUs, particularly for cleaning a semiconductor substrate or a semiconductor device in which a wiring material containing aluminum and/or titanium is used. | 10-01-2009 |
20090270299 | Composition for removing protective layer in fabrication of MEMS and method for removing same - There is provided a composition that can effectively remove a protective coating and a primer coating that have a resistance to etching solutions and are rendered unnecessary after wet-etching treatment in MEMS fabrication processes, and a method for removing the protective layer. The composition contains (A) at least one organic solvent selected from the group consisting of amides, lactones, pyrrolidones and ketones, (B) water, and (C) a fluoride, in an amount of 80.00 to 99.90 mass %, 0.05 to 12.00 mass %, and 0.05 to 8.00 mass %, respectively. The composition may further contain (D) phosphoric acid, phosphonic acid or phosphinic acid in an amount over 0 mass part to 5.5 mass parts, or (E) an organic amine in an amount over 0 mass part to 45 mass parts, based on 100 mass parts of the composition. | 10-29-2009 |
20090270300 | Composition for removing protective layer in fabrication of mems and method for removing same - There is provided a composition that can effectively remove a protective coating and a primer coating that have a resistance to etching solutions and are rendered unnecessary after wet-etching treatment in MEMS fabrication processes, and a method for removing the protective layer. The composition contains (A) at least one organic solvent selected from the group consisting of amides, lactones, pyrrolidones and ketones, (B) water, and (C) a fluoride, in an amount of 80.00 to 99.90 mass %, 0.05 to 12.00 mass %, and 0.05 to 8.00 mass %, respectively. The composition may further contain (D) phosphoric acid, phosphonic acid or phosphinic acid in an amount over 0 mass part to 5.5 mass parts, or (E) an organic amine in an amount over 0 mass part to 45 mass parts, based on 100 mass parts of the composition. | 10-29-2009 |
20090286708 | CLEANING LIQUID COMPOSITION FOR A SEMICONDUCTOR SUBSTRATE - It is an object of the present invention to provide a liquid composition for cleaning a semiconductor substrate capable of removing metal impurities on the substrate surface without corroding a copper wiring in the manufacturing process of a semiconductor circuit element. | 11-19-2009 |
20090291872 | Ionic Liquids and Methods For Using the Same - The present invention provides compositions comprising ionic liquids and an amine compound, and methods for using and producing the same. In some embodiments, the compositions of the invention are useful in reducing the amount of impurities in a fluid medium or a solid substrate. | 11-26-2009 |
20090291873 | Method and Composition for Post-CMP Cleaning of Copper Interconnects Comprising Noble Metal Barrier Layers - A composition and method comprising same for the post-chemical mechanical planarization (CMP) of substrates comprising copper and a noble metal, such as but not limited to, ruthenium is described herein wherein the composition controls and/or minimizes the corrosion of copper during the cleaning process. In one aspect, the composition comprises a compound comprising at least one group chosen from an amino acid group, a betaine group, and combinations thereof; optionally a pH modifier chosen from an organic acid, an organic base, or combinations thereof; optionally a surfactant; and optionally a chelating agent. | 11-26-2009 |
20090291874 | IONIC LIQUIDS AND METHODS FOR USING THE SAME - The present application discloses compositions comprising ionic liquids and an amine compound, and methods for using and producing the same. In some embodiments, the compositions disclosed herein are useful in reducing the amount of impurities in a fluid medium or a solid substrate. | 11-26-2009 |
20090305931 | COMPOSITION FOR REMOVING AN INSULATION MATERIAL AND RELATED METHODS - A composition for removing an insulation material and related methods of use are disclosed. The composition comprises about 1 to 50 percent by weight of an oxidizing agent, about 0.1 to 35 percent by weight of a fluorine-containing compound, and water. The insulation material comprises at least one of a low-k material and a protection material. | 12-10-2009 |
20100016202 | MATERIALS AND SYSTEMS FOR ADVANCED SUBSTRATE CLEANING - The embodiments of the present invention provide improved materials, apparatus, and methods for cleaning wafer surfaces, especially surfaces of patterned wafers (or substrates). The cleaning materials, apparatus, and methods discussed have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning material includes polymers of one or more polymeric compounds. The cleaning materials can be used in a wide range of viscosity and pH to clean different types of surfaces. The cleaning materials are in liquid phase, and deform around device features to capture the contaminants on the substrate. The polymers entrap the contaminants preventing their return to the substrate surface. The cleaning apparatus is designed to dispense and rinse cleaning materials with a range of viscosities. | 01-21-2010 |
20100029531 | Nonflammable compositions comprising fluorinated compounds and use of these compositions - The invention relates to non-flammable compositions comprising fluorinated compounds selected from the group consisting of hydrofluoroalkanes, hydrofluoroalkenes, partially or perfluorinated aromatic compounds, hydrofluoroethers or fluoroketones, 1,2-dichloroethylene, especially trans-1,2-dichloroethylene, and a stabilizer. These non-flammable compositions which preferably contain 1,1,1,3,3-pentafluorobutane, can be used especially as solvents for cleaning and defluxing electronic components and for degreasing metals. The compositions further may comprise a propellant, e.g. 1,1,1,2-tetrafluoroethane. These compositions are especially suitable as flushing agent. | 02-04-2010 |
20100035785 | AQUEOUS CLEANING COMPOSITION CONTAINING COPPER-SPECIFIC CORROSION INHIBITOR FOR CLEANING INORGANIC RESIDUES ON SEMICONDUCTOR SUBSTRATE - A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures. | 02-11-2010 |
20100056409 | COMPOSITIONS FOR PROCESSING OF SEMICONDUCTOR SUBSTRATES - Compositions useful in microelectronic device manufacturing for surface preparation and/or cleaning of wafer substrates such as microelectronic device precursor structures. The compositions can be employed for processing of wafers that have, or are intended to be further processed to include, copper metallization, e.g., in operations such as surface preparation, pre-plating cleaning, post-etching cleaning, and post-chemical mechanical polishing cleaning of microelectronic device wafers. The compositions contain (i) alkanolamine, (ii) quaternary ammonium hydroxide and (iii) a complexing agent, and are storage-stable, as well as non-darkening and degradation-resistant in exposure to oxygen. | 03-04-2010 |
20100081595 | LIQUID CLEANING COMPOSITION AND METHOD FOR CLEANING SEMICONDUCTOR DEVICES - Aqueous liquid cleaning composition for wet cleaning of the sidewalls and bottom of vias formed in a dielectric layer of a semiconductor device, said composition comprising: c) hydrofluoric acid; d) a corrosion inhibitor which is a polyazo corrosion inhibitor or carboxylic acid corrosion inhibitor. | 04-01-2010 |
20100093585 | POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME - A post CMP treating liquid is provided, which includes water, resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, a first surfactant having carboxylic group, a second surfactant having sulfonyl group, and tetramethyl ammonium hydroxide. The resin particles are incorporated at a concentration ranging from 0.01 to 1 wt %. The treating liquid has a pH ranging from 4 to 9, and exhibits a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less. | 04-15-2010 |
20100099595 | MANUFACTURING AND CLEANSING OF THIN FILM TRANSISTOR PANELS - A manufacturing a thin film transistor array panel includes depositing a first thin film including aluminum on a substrate, patterning the first thin film by photolithography and etching, cleansing the substrate including the first thin film, and depositing a second thin film on the cleansed substrate. The cleansing is performed using a cleansing material including ultrapure water, cyclic amine, pyrogallol, benzotrizole, and methyl glycol. The cleansing material includes ultrapure water at about 85 wt % to about 99 wt %, cyclic amine at about 0.01 wt % to about 1.0 wt %, pyrogallol at about 0.01 wt % to 1.0 wt %, benzotrizole at about 0.01 wt % to 1.0 wt %, and methyl glycol at about 0.01 wt % to 1.0 wt %. | 04-22-2010 |
20100120647 | COMPOSITION OF A CLEANING MATERIAL FOR PARTICLE REMOVAL - The embodiments of the present invention provide improved materials for cleaning patterned substrates with fine features. The cleaning materials have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. To assist removing of particles from the wafer (or substrate) surfaces, the polymeric compound of the polymers can contain a polar functional group, which can establish polar-polar molecular interaction and hydrogen bonds with hydrolyzed particles on the wafer surface. The polymers of a polymeric compound(s) with a large molecular weight form long polymer chains and network. The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials. The polymeric compound(s) of the polymers may also include a functional group that carries charge in the cleaning solution. The charge of the functional group of the polymers improves the particle removal efficiency. | 05-13-2010 |
20100152085 | CLEANING SOLUTION FOR SEMICONDUCTOR DEVICE OR DISPLAY DEVICE, AND CLEANING METHOD - A cleaning solution for semiconductor devices or display devices containing a polyamine of a specified structure having two or more amino groups in adjacent positions of a carbon chain or a salt thereof and a cleaning method of semiconductor devices or display devices using the subject cleaning solution are provided. The cleaning solution for semiconductor devices or display devices of the present invention has high safety, brings a little burden on the environment and is able to easily remove etching residues on a semiconductor substrate in a short time; on that occasion, it is possible to achieve microfabrication without utterly corroding wiring materials; and furthermore, rinsing can be achieved with only water without necessity for use of, as a rinse solution, an organic solvent such as alcohols. In consequence, according to the cleaning method of the present invention, in manufacturing semiconductor devices or display devices, it is possible to extremely advantageously manufacture circuit wirings with a little burden on the environment, high precision and high quality on an industrial scale. | 06-17-2010 |
20100152086 | Wet Clean Compositions for CoWP and Porous Dielectrics - The present invention is a formulation for wet clean removal of post etch and ash residue from a semiconductor substrate having a CoWP feature, comprising;
| 06-17-2010 |
20100160200 | Cleaning liquid for semiconductor device and cleaning method - The invention provides a cleaning liquid for semiconductor devices which is capable of removing deposits on a surface of an object to be cleaned including a photoresist, an antireflective film, an etching residue and an ashing residue at a low temperature in a short period of time with reduced environmental burdens and without causing corrosion of an interlayer dielectric film, a metal, a metal nitride, and an alloy in the object to be cleaned. The cleaning liquid for semiconductor devices according to the invention contains a reducing agent and a surfactant and has a pH of 10 to 14. | 06-24-2010 |
20100167972 | CLEANING SOLUTION FOR SUBSTRATE FOR SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING SUBSTRATE FOR SEMICONDUCTOR DEVICE - To provide a cleaning solution for a substrate for a semiconductor device which is excellent in the ability to remove particles, organic contaminants, metal contaminants and composite contaminants of an organic matter and a metal attached on a substrate surface, whereby the substrate surface can be highly cleaned, without being corroded. Particularly, to provide a cleaning solution which is excellent in the ability to clean low dielectric constant (Low-k) materials on which liquid is easily repelled due to hydrophobic and of which the ability to remove particles is poor. | 07-01-2010 |
20100179085 | SYSTEMS AND METHODS FOR CHARGING A CLEANING SOLUTION USED FOR CLEANING INTEGRATED CIRCUIT SUBSTRATES - Inventive methods, systems and compositions of cleaning integrated circuit (“IC”) substrates are described. The cleaning methods of the present invention include: charging a solution, which contains at least a solute selected to promote cleaning of the IC substrate, to produce a charged solution, such that at least a portion of the solute is present as clusters in the charged solution; and conveying the charged solution for cleaning the IC substrate. | 07-15-2010 |
20100261632 | NON-FLUORIDE CONTAINING COMPOSITION FOR THE REMOVAL OF RESIDUE FROM A MICROELECTRONIC DEVICE - Cleaning compositions and processes for removing residue from a microelectronic device having said residue thereon. The composition, which is substantially devoid of fluoride species, amine species, and organic solvents, achieves highly efficacious cleaning of the residue material, including post-etch residue, post-ash residue and/or post-CMP residue, from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon. | 10-14-2010 |
20100286014 | LOW PH POST-CMP RESIDUE REMOVAL COMPOSITION AND METHOD OF USE - An acidic composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The acidic composition includes surfactant, dispersing agent, sulfonic acid-containing hydrocarbon, and water. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. | 11-11-2010 |
20100311630 | SURFACE TREATMENT COMPOSITION, SURFACE TREATMENT METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A surface treatment composition of this invention is a composition for treating a metal wiring-including surface of a semiconductor substrate, which includes a compound (A) represented by a specific structural formula and a solvent (B) having a boiling point at one atmospheric pressure of 50 to 300° C., and has a pH of 4 to 11. | 12-09-2010 |
20100317556 | Two-Phase Substrate Cleaning Material - A cleaning compound is disclosed for removing particulate contaminants from a semiconductor substrate surface. The cleaning compound includes a liquid and carboxylic acid solid components dispersed in a substantially uniform manner in the liquid. A concentration of the carboxylic acid solid components in the liquid exceeds a solubility limit of the carboxylic acid solid components in the liquid. In one embodiment, a concentration of the carboxylic acid solid components in the liquid is within a range extending from about 3 percent by weight to about 5 percent by weight. In one embodiment, the carboxylic acid solid components are defined by a carbon number of at least four. The carboxylic acid solid components are defined to interact with the particulate contaminants on the semiconductor substrate surface to remove the particulate contaminants from the semiconductor substrate surface. The cleaning compound is viscous and may be formed as a gel. | 12-16-2010 |
20100331226 | Damage-Free High Efficiency Particle Removal Clean - A system, method and an apparatus to remove contaminants from a semiconductor substrate surface includes application of a cleaning material. The cleaning material includes a cleaning solution and a plurality of micron-sized dry polyvinyl particles dispersed in the cleaning solution. The cleaning solution is a single phase polymeric compound that is made of long polymeric chains and exhibits distinct viscoelastic properties. The plurality of micron-sized dry polyvinyl alcohol particles absorb the liquid in the cleaning solution and become uniformly suspended within the cleaning material. The suspended polyvinyl alcohol particles interact with at least some of contaminants on the semiconductor substrate surface to release and remove the contaminants from the substrate surface. The released contaminants are entrapped within the cleaning material and removed with the cleaning material leaving behind a substantially clean substrate surface. | 12-30-2010 |
20110065621 | MATERIAL FOR CLEANING A SUBSTRATE - Material for cleaning using a tri-state body are disclosed. A substrate having a particle deposited thereon is provided. A tri-state body that has a solid portion, liquid portion, and a gas portion is generated. A force is applied over the tri-state body to promulgate an interaction between the solid portion and the particle. The tri-state body is removed along with the particle from the surface of the substrate. The interaction between the solid portion and the particle causes the particle to be removed along with the tri-state body. | 03-17-2011 |
20110152151 | Post Deposition Wafer Cleaning Formulation - Methods and systems for cleaning corrosion product of a metallic capping layer from the surface of a substrate are provided. According to one embodiment, a treatment solution includes a surfactant, a complexing agent, and a pH adjuster. The surfactant is configured to enhance wetting of the substrate surface, and inhibit further corrosion of the capping layer. The complexing agent is configured to bind to metal ions which have desorbed from the substrate surface. The pH adjuster is configured to adjust the pH to a desired level, so as to promote desorption of the corrosion product from the substrate surface. | 06-23-2011 |
20110160112 | CLEANING COMPOSITION - A cleaning composition including a polyamino carboxylic salt, an acid and water is provided. The content of the polyamino carboxylic salt is 0.01 wt % to 0.5 wt %. The content of the acid is 0.01 wt % to 0.5 wt %. The remaining portion of the cleaning composition is water. | 06-30-2011 |
20110195887 | AQUEOUS ACIDIC FORMULATIONS FOR COPPER OXIDE ETCH RESIDUE REMOVAL AND PREVENTION OF COPPER ELECTRODEPOSITION - A highly aqueous acidic cleaning composition for copper oxide etch removal from Cu-dual damascene microelectronic structures and wherein that composition prevents or substantially eliminates copper redeposition on the Cu-dual damascene microelectronic structure. | 08-11-2011 |
20110195888 | POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME - Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less. | 08-11-2011 |
20110212865 | Gluconic acid containing photoresist cleaning composition for multi-metal device processing - A microelectronic photoresist cleaning composition suitable for cleaning multi-metal microelectronic devices and to do so without any substantial or significant galvanic corrosion occurring when there is a subsequent rinsing step employing water. | 09-01-2011 |
20110237480 | CLEANING COMPOSITION, CLEANING PROCESS, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE - A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10. | 09-29-2011 |
20120021961 | COMPOSITION FOR POST CHEMICAL-MECHANICAL POLISHING CLEANING - The present invention relates to a composition for post chemical-mechanical polishing (CMP) cleaning. The composition is alkaline, which can remove azole-type corrosion inhibitors on the wafer surface after CMP. This composition can effectively remove azole compounds, increase wettability of the Cu surface, and significantly improve the defect removal after CMP. | 01-26-2012 |
20120028870 | NON-AMINE POST-CMP COMPOSITION AND METHOD OF USE - A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of amine and ammonium-containing compounds, e.g., quaternary ammonium bases. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. | 02-02-2012 |
20120065116 | CLEANING LIQUID AND CLEANING METHOD - Disclosed is a cleaning liquid which is capable of cleaning an object to be cleaned, to the surface of which cerium oxide adheres, by dissolving and removing cerium oxide in the form of cerium ions. A cleaning method using the cleaning liquid is also disclosed. The cleaning liquid for removing cerium oxide is characterized by containing hydrogen fluoride, at least one acid selected from the group consisting of hydrochloric acid, nitric acid, sulfuric acid, acetic acid, phosphoric acid, iodic acid and hydrobromic acid, and water. The cleaning liquid is also characterized by dissolving and removing cerium oxide in the form of cerium ions. | 03-15-2012 |
20120083436 | COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE - The present invention is directed to compositions and method of use for treating semiconductor substrate comprising a sulfonium compound and a nucleophilic amine in the fabrication of electronic devices. Optionally, the said composition further comprises a chelating agent, and solvent. The pH of the said solution can be adjusted with the addition of acid or base. The semiconductor manufacturing processes include steps for post etch residue, photoresist removal and steps during chemical mechanical planarization and post chemical mechanical planarization. | 04-05-2012 |
20120094887 | METHOD FOR SUPPLYING HYDROXYL RADICAL-CONTAINING WATER AND APPARATUS FOR SUPPLYING HYDROXYL RADICAL-CONTAINING WATER - Disclosed is a method for supplying hydroxyl radical-containing water, which is highly convenient and with which water containing a relatively high concentration of hydroxyl radicals can be supplied to the point of use. The method for supplying hydroxyl radical-containing water comprises a production step of producing hydroxyl radical-containing water by dissolving ozone, hydrogen peroxide, and at least one additive substance selected from a group consisting of a water-soluble organic compound, an inorganic acid, a salt of an inorganic acid, and hydrazine in pure water, a transferring step of transferring the produced hydroxyl radical-containing water to the point of use, and a supplying step of supplying the hydroxyl radical-containing water to the point of use after transferring. | 04-19-2012 |
20120172272 | CLEANING COMPOSITION FOR SEMICONDUCTOR DEVICE AND METHOD OF CLEANING SEMICONDUCTOR DEVICE USING THE SAME - A cleaning composition for a semiconductor device and a method of cleaning a semiconductor device, the composition including about 0.001 to about 0.5 wt % of a fluorine compound, based on a total weight of the composition; about 0.1 to about 10 wt % of an alkyl, aryl, or aralkyl-substituted ammonium hydroxide compound, based on a total weight of the composition; about 0.1 to about 10 wt % of a nitrogen-containing carboxylic acid, based on a total weight of the composition; about 0.01 to about 1 wt % of a water-soluble polymer compound, based on a total weight of the composition; and water. | 07-05-2012 |
20120172273 | WAFER WASHING WATER AND WAFER WASHING METHOD - The invention provides a wafer washing technique which does not require complicated operations and by which a wafer is washed with ultrapure water through relatively simple operations without contaminating the wafer surface with metals even if the ultrapure water contains metal ions on the ng/L (ppt) level. Wafer washing water includes ultrapure water to which a substance having an affinity for metal ions has been added. A wafer washing method uses this wafer washing water. A substance that exhibits an affinity for metal ions is added beforehand to wafer washing ultrapure water. As a result, the substance captures metal ions present in the ultrapure water and stabilizes them in water, thereby effectively preventing the metal ions from migrating toward the wafer surface and becoming attached to the wafer surface during washing. | 07-05-2012 |
20120214722 | TREATMENT SOLUTION FOR PREVENTING PATTERN COLLAPSE IN METAL FINE STRUCTURE BODY, AND PROCESS FOR PRODUCTION OF METAL FINE STRUCTURE BODY USING SAME - There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing at least one member selected from the group consisting of an ammonium halide having a fluoroalkyl group, a betaine compound having a fluoroalkyl group, and an amine oxide compound having a fluoroalkyl group, and a method for producing a fine metal structure using the same. | 08-23-2012 |
20120283163 | COPPER CLEANING AND PROTECTION FORMULATIONS - A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. | 11-08-2012 |
20130045908 | METHOD AND COMPOSITION FOR REMOVING RESIST, ETCH RESIDUE, AND COPPER OXIDE FROM SUBSTRATES HAVING COPPER, METAL HARDMASK AND LOW-K DIELECTRIC MATERIAL - A semiconductor processing composition and method for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate comprising copper, low-k dielectric material and TiN, TiNxOy or W wherein the composition includes water, a Cu corrosion inhibitor, at least one halide anion selected from Cl | 02-21-2013 |
20130053291 | COMPOSITION FOR CLEANING SUBSTRATES POST-CHEMICAL MECHANICAL POLISHING - A semiconductor processing composition and method for cleaning semiconductor wafers post chemical mechanical polishing comprising a phosphorous base and optionally at least one surfactant. | 02-28-2013 |
20130072411 | AQUEOUS CLEANING COMPOSITION CONTAINING COPPER-SPECIFIC CORROSION INHIBITOR FOR CLEANING INORGANIC RESIDUES ON SEMICONDUCTOR SUBSTRATE - A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures. | 03-21-2013 |
20130090280 | CLEANING COMPOSITIONS AND METHODS - The present invention relates, in part, to compositions including at least one hydrofluoro-olefin or hydrochlorofluoro-olefin solvent. Such compositions may optionally contain one or more alcohols or other co-solvent or agent and may be used to provide one or more cleaning applications. | 04-11-2013 |
20130096044 | LIQUID CONCENTRATE FOR CLEANING COMPOSITION, CLEANING COMPOSITION AND CLEANING METHOD - Provided is a liquid concentrate for cleaning composition which could exhibit excellent environmental safety etc. by adding afterward a predetermined amount of water, and also has excellent regeneration efficiency, and provided are a cleaning composition and a cleaning method thereof. Disclosed is a liquid concentrate for cleaning composition which is used as a mixture with water and is intended for cleaning an object to be cleaned in a clouded state, with a predetermined amount of water having been added thereto, the liquid concentrate for cleaning composition including, a first organic solvent which is a predetermined hydrophobic glycol ether compound or the like, and a second organic solvent which is a predetermined hydrophilic amine compound. | 04-18-2013 |
20130123158 | METHOD OF CLEANING COPPER MATERIAL SURFACES IN ULTRA LARGE SCALE INTEGRATED CIRCUITS AFTER POLISHING THE SAME - A method of cleaning copper material surfaces in ultra large scale integrated circuits after polishing, the method including: a) mixing and stirring between 1 and 4 wt. % of a surfactant, between 0.5 and 3 wt. % of a chelating agent, between 0.1 and 5 wt. % of a corrosion inhibitor, and deionized water, to yield a water soluble cleaning solution with pH value of between 7.4 and 8.2; and b) washing the copper material surfaces using the cleaning solution after alkaline chemical-mechanical polishing under following conditions: between 2000 and 3000 Pa of pressure; between 1000 and 5000 mL/min of flow rate:; and at least between 0.5 and 2 min of washing time. | 05-16-2013 |
20130130961 | INHIBITING CORROSION AND SCALING OF SURFACES CONTACTED BY SULFUR-CONTAINING MATERIALS - A method of treatment for inhibiting sulfur-based corrosion or scaling or for removing scaling from a surface including inhibiting corrosion caused by sulfur-containing materials, reducing corrosion caused by sulfur-containing materials, inhibiting scaling caused by sulfur-containing and sulfur-containing materials in gas, liquid or solid phase or any combination of multiple phases of materials, reducing scaling caused by sulfur-containing and sulfur-containing materials, and removing scaling caused by sulfur-containing and sulfur-containing materials. The method involves contacting sulfur-containing materials with a composition containing a turpentine liquid. The method also involves contacting corrodible surfaces or surfaces prone to scaling with a composition containing a turpentine liquid. | 05-23-2013 |
20130143785 | CLEANING LIQUID COMPOSITION FOR ELECTRONIC DEVICE - [Purpose] To provide a cleaning liquid composition that has excellent removability for metallic impurities and particulates, does not cause corrosion of Cu, and can clean a semiconductor substrate having copper wiring in a production process for an electronic device such as a semiconductor device. | 06-06-2013 |
20130157919 | AQUEOUS ALKALINE CLEANING COMPOSITIONS AND METHODS OF THEIR USE - Aqueous alkaline cleaning composition free from organic solvents and metal ion-free silicates, the said compositions comprising (A) a thioamino acid having at least one primary amino group and at least one mercapto group, (B) a quaternary ammonium hydroxide, (C) a chelating and/or corrosion inhibiting agent selected from the group consisting of aliphatic and cycloaliphatic amines having at least two primary amino groups, and aliphatic and cycloaliphatic amines having at least one hydroxy group, (D) a nonionic surfactant selected from the group of acetylenic alcohols, alkyloxylated acetylenic alcohols and alkyloxylated sorbitan monocarboxylic acid mono esters; the use of the alkaline cleaning composition for the processing of substrates useful for fabricating electrical and optical devices; and a method for processing substrates useful for fabricating electrical and optical devices making use of the said aqueous alkaline cleaning composition. | 06-20-2013 |
20130165364 | CLEANING AGENT FOR REMOVAL OF SOLDERING FLUX - A composition effective for removing solder fluxes either as a concentrated material or when diluted with water. The composition is effective in removing all types of solder fluxes including rosin type, resin type, no-clean, low residue, lead-free, organic acid and water soluble soldering fluxes. The composition comprises tripropylene glycol butyl ether and an alkali and has a pH of greater than 7.5. The composition may contain additional optional solvents and additives to enhance cleaning of articles or to impart other properties to the composition. The composition can be contacted with a surface to be cleaned in a number of ways and under a number of conditions depending on the manufacturing or processing variables present. | 06-27-2013 |
20130165365 | TREATMENT LIQUID FOR INHIBITING PATTERN COLLAPSE IN MICROSTRUCTURES, AND MICROSTRUCTURE MANUFACTURING METHOD USING SAID TREATMENT LIQUID - There are provided a processing liquid for suppressing pattern collapse of a microstructure which includes at least one compound selected from the group consisting of an imidazolium halide containing an alkyl group having 12, 14 or 16 carbon atoms, a pyridinium halide containing an alkyl group having 14 or 16 carbon atoms and an ammonium halide containing an alkyl group having 16 or 18 carbon atoms, and water; and a method for producing a microstructure formed of silicon oxide using the processing liquid. | 06-27-2013 |
20130172224 | CLEANING LIQUID, AND ANTICORROSIVE AGENT - In a cleaning liquid containing (A) an anticorrosive agent, and (B) a solvent, a compound represented by the following formula (1): | 07-04-2013 |
20130203643 | CLEANING AGENT FOR SEMICONDUCTOR PROVIDED WITH METAL WIRING - A cleaning agent for a microelectronic device provided with metal wiring, which has an excellent ability to remove polishing particle residues derived from a polishing agent and an excellent ability to remove metallic residues on an insulating film, and has excellent anticorrosiveness to the metal wiring. The cleaning agent is used at a step subsequent to chemical mechanical polishing in a manufacturing process of a microelectronic device in which a metal wiring, e.g., copper or tungsten, is formed. | 08-08-2013 |
20130225464 | CLEANING LIQUID FOR SEMICONDUCTOR DEVICE SUBSTRATES AND CLEANING METHOD - The invention relates to a cleaning liquid for semiconductor device substrates, which is for use in a step of cleaning a semiconductor device substrate to be conducted after a chemical mechanical polishing step in semiconductor device production, the cleaning liquid including the following components (A) to (D):
| 08-29-2013 |
20130237469 | ALUMINUM POST-ETCH RESIDUE REMOVAL WITH SIMULTANEOUS SURFACE PASSIVATION - Al post-etch residue removal composition doped with an alkanoic acid of the formula R—COOH, where R can be a linear or branched alkyl group in the form of C | 09-12-2013 |
20130261039 | QUATERNARY AMMONIUM HYDROXIDES - A method of removing a residue from a surface, including applying to the surface a composition including (a) a quaternary ammonium hydroxide having a general formula (I): | 10-03-2013 |
20130261040 | SUBSTRATE CLEANER FOR COPPER WIRING, AND METHOD FOR CLEANING COPPER WIRING SEMICONDUCTOR SUBSTRATE - A cleaning agent for a substrate having a copper wiring consisting of an aqueous solution comprising [I] an amino acid represented by the following general formula [1], and [II] an alkylhydroxylamine; and a method for cleaning a semiconductor substrate having a copper wiring characterized by using the relevant cleaning agent for a substrate having a copper wiring; | 10-03-2013 |
20130303420 | COMPOSITION FOR AND METHOD OF SUPPRESSING TITANIUM NITRIDE CORROSION - Cleaning compositions and processes for cleaning residue from a microelectronic device having said residue thereon. The composition comprises at least one amine, at least one oxidizing agent, water, and at least one borate species and achieves highly efficacious cleaning of the residue material, including post-ash residue, post-etch residue, post-CMP residue, particles, organic contaminants, metal ion contaminants, and combinations thereof from the microelectronic device while simultaneously not damaging the titanium nitride layers and low-k dielectric materials also present on the device. | 11-14-2013 |
20140107008 | CLEANING COMPOSITION AND CLEANING METHOD USING THE SAME - A cleaning composition is provided. The cleaning composition includes at least one polyamino-polycarboxylic acid or at least one salt thereof, at least one solvent, at least one substituted or non-substituted phenethylamine and water. The solvent is selected from a group consisting of glycols. | 04-17-2014 |
20140121145 | TREATMENT OF SHAPED BODIES COMPRISING COPPER WITH A MIXTURE COMPRISING CHLORINE-FREE ACIDS AND OXIDIZING AGENT - A process for treatment of shaped bodies comprising copper, wherein an aqueous mixture (M) comprising (a.) chlorine-free acids without carboxyl groups, (b.) oxidizing agents, (c.) aqueous solvent and optionally additional additives is contacted with the shaped body. Another characteristic feature of the process is that the aqueous mixture (M) after the etching or pickling additionally comprises (e.) dissolved copper and is separated from the solid. Also encompassed is a process for workup of the aqueous mixture (M) which has been separated and additionally comprises dissolved copper by electrolysis. Further provided are mixtures (MI) comprising (a.) from 10 to 40% by weight of methanesulfonic acid, (b.) from 10 to 20% by weight of hydrogen peroxide and (c.) from 40 to 80% by weight of water, and the use thereof for etching or pickling of shaped bodies comprising copper. | 05-01-2014 |
20140128307 | CLEANING COMPOSITION AND PROCESS FOR CLEANING SEMICONDUCTOR DEVICES AND/OR TOOLING DURING MANUFACTURING THEREOF - Cleaning solutions and processes for cleaning semiconductor devices or semiconductor tooling during manufacture thereof generally include contacting the semiconductor devices or semiconductor tooling with an acidic aqueous cleaning solution free of a fluorine containing compound, the acidic aqueous cleaning solution including at least one antioxidant and at least one non-oxidizing acid. | 05-08-2014 |
20140179582 | METHODS AND COMPOSITIONS FOR REMOVAL OF METAL HARDMASKS - The invention provides a process for removing a film from a substrate, said process comprising applying a composition to the film, and
| 06-26-2014 |
20140206588 | ANTIOXIDANTS FOR POST-CMP CLEANING FORMULATIONS - An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. | 07-24-2014 |
20140243249 | METAL STRIPPING ADDITIVE, COMPOSITION CONTAINING THE SAME, AND METHOD FOR STRIPPING METAL BY USING THE COMPOSITION - The present invention provides a metal stripping additive, composition containing the same, and method for stripping metal by using the composition. The metal stripping additive comprises a phosphate, a carbonate, and a component selected from at least one of citric acid or a derivative thereof, oxalate or a derivative thereof, malate or a derivative thereof. The metal stripping additive is used with nitric acid as the metal stripping composition of the present invention. The present method has advantages of being capable of stripping various metals, low corrosion, low toxicity, and being applicable under ambient temperature. | 08-28-2014 |
20140243250 | POLISHING SLURRY FOR COBALT REMOVAL - Provided herein are polishing compositions for removal of Co, for example, selectively over Cu, and methods of their use. A polishing composition comprising an abrasive and one or more Co complexors, where the polishing composition has a pH of 9 or more, and the Co complexor comprises one or more of functional groups selected from phosphonic acid (—P(═O)(OH) | 08-28-2014 |
20140371124 | CLEANING LIQUID FOR SEMICONDUCTOR DEVICE AND METHOD FOR CLEANING SUBSTRATE FOR SEMICONDUCTOR DEVICE - An object of the present invention is to provide a good cleaning liquid for semiconductor device which is used after a CMP step, and the present invention relates to a cleaning liquid for semiconductor device containing the following components (1) to (5) or (1)′ to (4)′:
| 12-18-2014 |
20150018261 | POST CHEMICAL-MECHANICAL-POLISHING (POST-CMP) CLEANING COMPOSITION COMPRISING A SPECIFIC SULFUR-CONTAINING COMPOUND AND A SUGAR ALCOHOL OR A POLYCARBOXYLIC ACID - A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) at least one compound comprising at least one thiol (—SH), thioether (—SR | 01-15-2015 |
20150024989 | CLEANING COMPOSITION AND PROCESS FOR CLEANING SEMICONDUCTOR DEVICES AND/OR TOOLING DURING MANUFACTURING THEREOF - Cleaning solutions and processes for cleaning semiconductor devices or semiconductor tooling during manufacture thereof generally include contacting the semiconductor devices or semiconductor tooling with an acidic aqueous cleaning solution free of a fluorine containing compound, the acidic aqueous cleaning solution including at least one antioxidant and at least one non-oxidizing acid. | 01-22-2015 |
20150045277 | POST-CMP FORMULATION HAVING IMPROVED BARRIER LAYER COMPATIBILITY AND CLEANING PERFORMANCE - A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one azole corrosion inhibitor, at least one reducing agent, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers, wherein the barrier layers are substantially devoid of tantalum or titanium. | 02-12-2015 |
20150094248 | METAL AND DIELECTRIC COMPATIBLE SACRIFICIAL ANTI-REFLECTIVE COATING CLEANING AND REMOVAL COMPOSITION - A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture. | 04-02-2015 |
20150105308 | Aqua Regia and Hydrogen Peroxide HCl Combination to Remove Ni and NiPt Residues - A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate. | 04-16-2015 |
20150111804 | CLEANING FORMULATIONS FOR REMOVING RESIDUES ON SURFACES - This disclosure relates to a cleaning composition that contains 1) at least one chelating agent, the chelating agent being a polyaminopolycarboxylic acid; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one monocarboxylic acid containing a primary or secondary amino group and at least one additional basic group containing nitrogen; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate. | 04-23-2015 |
20150111805 | WAFER CLEANING FORMULATION - Methods and systems for cleaning corrosion product of a metallic layer from the surface of a substrate are provided. According to one embodiment, a treatment solution includes a surfactant, a complexing agent, and a pH adjuster. The surfactant is configured to enhance wetting of the substrate surface, and inhibit further corrosion of the capping layer. The complexing agent is configured to bind to metal ions which have desorbed from the substrate surface. The pH adjuster is configured to adjust the pH to a desired level, so as to promote desorption of the corrosion product from the substrate surface. | 04-23-2015 |
20150133356 | PHOTORESIST AND POST ETCH RESIDUE CLEANING SOLUTION - A process for cleaning a semi-conductor wafer comprising providing etched wafer containing metal pillars, contacting the etched wafer with a cleaning solution, removing the wafer from the cleaning solution, wherein the resulting wafer is substantially free of post etch residues and photoresist residues without etching the metal pillars by the cleaning solution, the cleaning solution comprising:
| 05-14-2015 |
20150307818 | AQUEOUS CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES - Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon. | 10-29-2015 |
20150307819 | SUBSTRATE CLEANING LIQUID AND SUBSTRATE CLEANING METHOD - In order to selectively further etch silicon nitride by a cleaning liquid in cleaning of a substrate having silicon nitride and silicon oxide on the substrate, a cleaning liquid for use in cleaning of a substrate having silicon nitride and silicon oxide on the same substrate, at least a portion of one or both of the silicon nitride and the silicon oxide being exposed on the substrate, including phosphoric acid, electrolytic sulfuric acid produced by electrolysis and including persulfuric acid suitably having a concentration of 1.0 g/L to 8.0 g/L, and water is suitably brought into contact with the substrate at 165° C. or higher and lower than a boiling point to selectively etch the silicon nitride on the substrate, thereby effectively etching the silicon nitride while etching of silicon oxide is suppressed to favorably clean a semiconductor substrate high in degree of integration having a pattern line width of 37 nm or less. | 10-29-2015 |
20150337245 | CLEANING COMPOSITION AND CLEANING METHOD - A cleaning composition includes (A) at least one compound selected from the group consisting of a fatty acid that includes a hydrocarbon group having 8 to 20 carbon atoms, a phosphonic acid that includes a hydrocarbon group having 3 to 20 carbon atoms, a sulfuric acid ester that includes a hydrocarbon group having 3 to 20 carbon atoms, an alkenylsuccinic acid that includes a hydrocarbon group having 3 to 20 carbon atoms, and salts thereof, (B) an organic acid, (C) a water-soluble amine, (D) a water-soluble polymer, and an aqueous medium, the cleaning composition having a pH of 9 or more. | 11-26-2015 |
20150344825 | COMPOSITIONS FOR CLEANING III-V SEMICONDUCTOR MATERIALS AND METHODS OF USING SAME - Liquid compositions useful for the cleaning of residue and contaminants from a III-V microelectronic device material, such as InGaAs, without substantially removing the III-V material. The liquid compositions are improvements of the SC1 and SC2 formulations. | 12-03-2015 |
20160010035 | COPPER CORROSION INHIBITION SYSTEM | 01-14-2016 |
20160020087 | POST-CMP REMOVAL USING COMPOSITIONS AND METHOD OF USE - An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The amine-free composition preferably includes at least one oxidizing agent, at least one complexing agent, at least one basic compound, and water and has a pH in the range from about 2.5 to about 11.5. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. | 01-21-2016 |
20160032221 | COPPER CLEANING AND PROTECTION FORMULATIONS - A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. | 02-04-2016 |
20160032227 | CLEANING COMPOSITION FOR SEMICONDUCTOR SUBSTRATE AND CLEANING METHOD - A cleaning composition for a semiconductor substrate contains a solvent, and a polymer that includes a fluorine atom, a silicon atom or a combination thereof. The content of water in the solvent is preferably no greater than 20% by mass. The cleaning composition preferably further contains an organic acid which is a non-polymeric acid. The organic acid is preferably a polyhydric carboxylic acid. The acid dissociation constant of the polymer is preferably less than that of the organic acid. The solubility of the organic acid in water at 25° C. is preferably no less than 5% by mass. The organic acid is preferably a solid at 25° C. | 02-04-2016 |
20160060584 | CLEANING AGENT FOR METAL WIRING SUBSTRATE, AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE - It is a subject of the present invention to provide a cleaning agent for a substrate having a metal wiring, and a cleaning method for a semiconductor substrate comprising that the cleaning agent is used, by which following effects (1) to (5) are obtained, in a cleaning process after chemical mechanical polishing (CMP) in a manufacturing process of a semiconductor device. (1) Residues of fine particles (polishing agents) used in the CMP process, fine particles (metal particles) derived from a polished metal, an anticorrosive, and the like, can be removed sufficiently. (2) A coating film (protective film: oxidation resistant film) on a surface of the metal wiring, containing a complex between an anticorrosive, such as benzotriazole or quinaldic acid, and a surface metal of the metal wiring, formed in the CMP process, can be removed (stripped) sufficiently. (3) An oxide film containing a metal oxide can be formed after removal (stripping) of the coating film. (4) A semiconductor substrate can be obtained stably for a long period of time, without impairing flatness of the surface of the metal wiring (the surface of the oxide film containing the metal oxide), even leaving a substrate after the cleaning process after the CMP. (5) It is hard to deteriorate even after using the cleaning agent for a long period of time. | 03-03-2016 |
20160075971 | COPPER CLEANING AND PROTECTION FORMULATIONS - A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include corrosion inhibitor(s) and surfactant(s). The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. | 03-17-2016 |
20160108348 | COMPOSITIONS FOR REMOVING RESIDUES AND RELATED METHODS - Compositions for removing residues from a semiconductor structure. The compositions comprise water, a base, a polydentate chelator, a degasser, and a fluorine source. The compositions comprise greater than or equal to approximately 99 wt % of the water and are formulated to exhibit a pH of from approximately 10.0 to approximately 12.0. Methods of forming and using the compositions are also disclosed. | 04-21-2016 |
20160137953 | CLEANING COMPOSITION AFTER CHEMICAL MECHANICAL POLISHING OF ORGANIC FILM AND CLEANING METHOD USING THE SAME - A cleaning composition includes an organic solvent, an organic acid, a chelating agent, a surfactant containing at least one hydroxyl group (OH) at the end, and an ultra pure water, wherein a pH value of the cleaning composition is equal to or higher than 12. | 05-19-2016 |
20160186105 | Stripping Compositions Having High WN/W Etching Selectivity - A composition for cleaning integrated circuit substrates, the composition comprising: water; an oxidizer comprising an ammonium salt of an oxidizing species; a corrosion inhibitor comprising a primary alkylamine having the general formula: R′NH | 06-30-2016 |
20160201016 | CLEANING COMPOSITION AND METHOD FOR CLEANING SEMICONDUCTOR WAFERS AFTER CMP | 07-14-2016 |
20160376532 | CLEANER COMPOSITION - The present invention relates to a cleaner composition. Specifically, the present invention relates to a cleaner composition that can be used to remove metal oxides and metal abrasive particles arising during metal polishing, such as chemical mechanical planarization (CMP). The cleaner composition has an improved ability to complex with metal abrasive particles. In addition, the cleaner composition maintains its ability to reduce metal abrasive particles, achieving improved stability. Therefore, the cleaner composition can be used for cleaning the surface of a metal with an increased ability to prevent corrosion of the metal surface. | 12-29-2016 |
20160376534 | CLEANING SOLUTION, CLEANING FACILITY AND METHOD OF CLEANING MOUNT SUBSTRATE - A method of cleaning a mount substrate comprising the step of: preparing a cleaning solution and cleaning the mount substrate by using the cleaning solution. The cleaning solution is a chemical solution produced by providing organic amine as a content in a hydrocarbon-based solvent containing a ketone or an aromatic and by adding unsaturated carboxylic acid anhydride or carboxylic anhydride to this solvent. | 12-29-2016 |