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Boride, silicide, nitride, oxynitride, carbonitride, or oxycarbonitride containing

Subclass of:

501 - Compositions: ceramic

501001000 - CERAMIC COMPOSITIONS

501094000 - Refractory

Patent class list (only not empty are listed)

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Class / Patent application numberDescriptionNumber of patent applications / Date published
501960100 Boride, silicide, nitride, oxynitride, carbonitride, or oxycarbonitride containing 36
20090270243TITANIUM-CONTAINING ADDITIVE - A titanium-containing additive, a method for its production and methods of using the additive.10-29-2009
20100167907METHOD FOR MANUFACTURING TRANSPARENT POLYCRYSTALLINE ALUMINUM OXYNITRIDE - The present invention relates to a method of manufacturing a transparent polycrystalline aluminum oxynitride. Aluminum oxynitride manufactured by prior art methods has a great number of porosities therein and thus has low transparency. The present invention is directed to solving such a problem. In the method of manufacturing aluminum oxynitride of the present invention, a sintering additive added to a source powder includes less than 0.5 wt. % MgO. Further, the source powder is presintered at 1550° C. to 1750° C. so that a relative density becomes 95% or more and is then resintered at 1900° C. or more so that a relative density higher than that of presintering can be accomplished. According to the present invention, a cubic-phased polycrystalline aluminum oxynitride ceramic can be obtained, wherein porosities therein are nearly eliminated and its substantial transparency becomes 95% or more.07-01-2010
20100331167Ceramics for Decorative Component and Decorative Component Using the Same - An object of the present invention is to provide ceramics for decorative component which has golden color tone and provides high-grade impression, aesthetic satisfaction and mind soothing effect, and has high mechanical properties such as hardness and toughness with less color difference. The present invention relates to a ceramics for decorative component, composed of titanium nitride-based sintered material which contains titanium nitride as a main component, wherein the titanium nitride-based sintered material contains nickel, niobium, chromium and carbon, and wherein a content of carbon is not less than 0.5% by mass nor more than 0.9% by mass. According to the ceramics for decorative component of the present invention, it is possible to have better mechanical properties such as hardness and toughness since carbon diffuses and forms solid solution with titanium nitride that accelerates the sintering process. In addition, since the black color of carbon is expected to suppress the surface color from becoming uneven through the effect of making the color a little achromatic. As a result, color difference (ΔE*ab) can be decreased so that difference in color tones is hardly felt among the decorative components.12-30-2010
20150057144NANOSTRUCTURED COMPOSITE MATERIALS COMPRISING REFRACTORY ELEMENTS - A bicontinuous non-porous microstructure comprising a refractory phase and a non-refractory phase, wherein the refractory phase substantially comprises one or more refractory elements and the non-refractory phase comprises a void filled by one or more materials that are different than a material comprising the non-refractory phase in a bicontinuous network from which the nanocomposite refractory material is formed and methods of making the same are disclosed.02-26-2015
501960200 From organometallic precursor 2
20090253568Method of making ceramic articles using proteinous material - A method is disclosed for manufacturing a ceramic article that includes mixing at least one ceramic precursor inorganic ingredient, and at least one binder to form a plasticized mixture, wherein the binder includes a proteinous material. The mixture is extruded to form a green body. The green body can be heated to form the ceramic article.10-08-2009
20110028302SILICON-BORON-CARBON-NITROGEN CERAMICS AND PRECURSOR COMPOUNDS, METHODS FOR THE SALT-FREE POLYMERISATION OF RnHal3-nSi-X-BRmHal2-m - The present invention relates to novel methods for the salt-free polymerisation of borosilylamines, which comprise the structural feature Si—N—B and borosilyl hydrocarbons, which comprise the structural feature Si—X—B, wherein X may be a methylene group or a hydrocarbon chain C02-03-2011
501960300 Boride or silicide containing 7
20080293558Wear Resistant Materials - A hard phase material is provided for increasing the hardness of a matrix material and improving the wear resistance thereof. The hard phase material is an aluminum boride material having the structure AlB11-27-2008
20090018010Metal Borides - The invention is related to a boride of a metal of transition group four of the periodic table of the elements, wherein at least 40 wt. % of the particles have a grain size of more than 106 μm, determined by sieve analysis according to ASTM B 214, and these particles consist of grown, monocrystalline grains. The invention also relates to a cermet, wettable powder and a surface coating which contain the boride. The invention further relates to a process to prepare the boride. The invention additionally relates to a process to prepare a cermet or a wettable powder.01-15-2009
20090023577Silicon Nitride Sintered Body and Manufacturing Method Thereof, Member For Molten Metal, Member For Hot Working, and Member For Digging - A silicon nitride sintered body comprising β-sialon expressed by a composition formula of Si01-22-2009
20090105062Sintered Wear-Resistant Boride Material, Sinterable Powder Mixture, for Producing Said Material, Method for Producing the Material and Use Thereof - The invention relates to a sintered wear-resistant material which is based on transition metal diborides and comprises 04-23-2009
20090143215PROCESS FOR REDUCING NON-UNIFORMITIES IN THE DENSITY OF SINTERED MATERIALS - There is disclosed a pre-sintering process for reducing non-uniformities in the density of a sintered material comprising (a) providing a mixture of (i) a first sinterable material containing a contaminant the presence of which during sintering of the first sinterable material results in a higher vapor pressure than would occur during sintering of pure first sinterable material and (ii) a second material having a higher affinity for the contaminant than does the first sinterable material; and (b) heating the mixture at a temperature and for a time sufficient to allow the second material to at least partly mitigate the propensity of the contaminant to raise the vapor pressure during the sintering of the first sinterable material. Other embodiments are also disclosed.06-04-2009
20130217563REFRACTORY OBJECT AND PROCESS OF FORMING A GLASS SHEET USING THE REFRACTORY OBJECT - A refractory object can include at least approximately 10 wt % Al08-22-2013
20150057145SILICOTHERMIC REDUCTION OF METAL OXIDES TO FORM EUTECTIC COMPOSITES - A method of making a eutectic alloy body by silicothermic reduction is provided. The method can include heating a mixture including silicon and a metal oxide comprising one or more metallic elements M and oxygen, forming a eutectic alloy melt from the mixture, and removing heat from the eutectic alloy melt, thereby forming the eutectic alloy body having a eutectic aggregation of a first phase comprising the silicon and a second phase being a silicide phase.02-26-2015
501960400 Boron nitride containing 5
20100069225METHOD OF SOLID PCBN SYTHESIS - The invention generally relates to a sintered CBN composite compact having a non-CBN portion. The compact includes about 86 to about 90% CBN and the non CBN portion contains borides and nitrides of Al. The compact is for use as a cutting tool insert in continuous machining of gray cast iron. The sintered compact has a thermal conductivity of 1.25-4 W/cm/° K. in the temperature range of about 200° C. to about 600° C. and sonic velocity of at least about 14.5 Km/sec at room temperature.03-18-2010
20120035045Cubic Boron Nitride Sintered Body and Coated Cubic Boron Nitride Sintered Body - A cubic boron nitride-containing sintered body has heightened fracture resistance and toughness without lowered wear resistance. The body has a binder phase containing titanium nitride and titanium carbonitride, cubic boron nitride and inevitable impurities. A distance between a Bragg angle 2θ of a (200) plane diffraction line of titanium carbonitride and a Bragg angle 2θ of a (200) plane diffraction line of titanium nitride in an X-ray diffraction measurement using a Cu—Kα line is 0.30° or more and 0.60° or less, and a full width at half maximum intensity of the (200) plane diffraction line of titanium carbonitride is 0.30° or more and 0.50° or less.02-09-2012
20120302425CUBIC BORON NITRIDE SINTERED BODY TOOL - The cubic boron nitride sintered body tool of the present invention has a cubic boron nitride sintered body including cubic boron nitride particles and a binder phase at at least a cutting edge. The cubic boron nitride sintered body includes 40-70 volume % of cubic boron nitride particles. The binder phase includes a first component and a second component. The first component includes TiC, and the second component includes one or both of TiB11-29-2012
20140106956Dental Investment Material - A new investment material for the pressing loss wax technique for dental glass ceramics. It has been found that the addition of fillers to a magnesium phosphate investment, specifically metal oxides with elevated melting points ranging from 1800 to 2800° C., provides a protection barrier against the reaction between the high alkaline content of the glass ceramic and the investment during the pressing process in the range of 800 to 950° C. Specifically, it has been found that the addition of aluminum oxide of about 2 to 5 percent of the total dry mix in combination with any of the zirconium oxide, yttrium stabilized zirconium, titanium dioxide and boron nitride in proportions of about 3.5%, enhances the barrier against a surface reaction and improves the thermal properties of the investment.04-17-2014
20160052827METHOD FOR MANUFACTURING CUBIC BORON NITRIDE SINTERED BODY, AND CUBIC BORON NITRIDE SINTERED BODY - Provided is a cubic boron nitride sintered body having good wear resistance and fracture resistance. A method for manufacturing a cubic boron nitride sintered body of the present invention is a method for manufacturing a cubic boron nitride sintered body having a cubic boron nitride particle content of 80% by volume or more and 99% by volume or less. The method includes a first step of preparing cubic boron nitride particles; a second step of coating surfaces of the cubic boron nitride particles with a coating material so as to obtain coated particles; a third step of mixing the coated particles and a binder to obtain a mixture; and a fourth step of sintering the mixture.02-25-2016
501960500 Silicon oxynitride, silicon carbonitride, or silicon oxycarbonitride containing (i.e., SiAOBNC, SiACBNC, or SiAOBCcND) 2
20080234123Refractory material for reduced SiO2 content - A refractory material used in refractory furnace liners, combustion chambers, baffles and artificial fire logs includes alumina silicate; an additive comprising at least one of silicon carbide, silicon nitride, boron carbide, boron nitride and silicon carbo-nitride; and a binder. The refractory material is light weight, has a high noise reduction capacity, is fire resistant and has a reduced silica content. In a most preferred embodiment, the additive makes up 50.0% to 55.0% of the material by weight, the binder makes up 4.5% to 5.0% of the material by weight and the linear shrinkage of the material is no greater than 3.5% at 2600° F. A preferred binder is colloidal silica although many others are suitable. Preferably, the material is free of cellulose fiber and sodium silicate.09-25-2008
20130157836Si3N4 insulator material for corona discharge igniter systems - A silicon nitride material is disclosed which has properties necessary for efficient operation of a corona discharge igniter system in an internal combustion gas engine allowing an increase in fuel efficiency of over 10%. The material is disclosed in a range of compositions, all of which exhibit high dielectric strengths, high mechanical strength, thermal shock resistance and fracture toughness, low dielectric constant and loss tangent and electrical resistivity, all of which significantly increase the efficiency of the igniter system over current state of the art alumina insulators. Moreover, the materials retain their dielectric strength and structural integrity at elevated temperatures, up to 800° C.-1000° C. One embodiment comprises a sintered silicon nitride process comprising powder batching, binder removal and sintering. In the preferred embodiment the method of manufacture for silicon nitride is an SRBSN process comprising powder batching, powder pressing, binder removal, nitriding and sintering.06-20-2013
501970100 Silicon nitride containing (Si3N4) 6
20100267543USE OF ADDITIVES TO IMPROVE MICROSTRUCTURES AND FRACTURE RESISTANCE OF SILICON NITRIDE CERAMICS - A high-strength, fracture-resistant silicon nitride ceramic material that includes about 5 to about 75 wt-% of elongated reinforcing grains of beta-silicon nitride, about 20 to about 95 wt-% of fine grains of beta-silicon nitride, wherein the fine grains have a major axis of less than about 1 micron; and about 1 to about 15 wt-% of an amorphous intergranular phase comprising Si, N, O, a rare earth element and a secondary densification element. The elongated reinforcing grains have an aspect ratio of 2:1 or greater and a major axis measuring about 1 micron or greater. The elongated reinforcing grains are essentially isotropically oriented within the ceramic microstructure. The silicon nitride ceramic exhibits a room temperature flexure strength of 1,000 MPa or greater and a fracture toughness of 9 MPa-m10-21-2010
501970200 With trivalent metal compound (e.g., yttrium, rare earth, or aluminum compound, etc.) 3
501970300 With alkaline earth metal compound 3
20090029843High-volume, fully dense silicon nitride monolith and method of making by simultaneously joing and hot pressing a plurality of RBSN parts - High-volume, fully dense, multi-component monoliths with microstructurally indistinguishable joints that can be used as refractory, corrosion and wear resistant components in the non-ferrous metal industry. The Si01-29-2009
20120190530Dense Silicon Nitride Body Having High Strength, High Weibull Modulus and high fracture toughness - Silicon nitride materials with high strength, fracture toughness values, and Weibull moduli simultaneously, due to unique large grain reinforcing microstructures and well engineered grain boundary compositions. The invention demonstrates that, surprisingly and contrary to prior art, a silicon nitride material can be made which simultaneously has high strength above about 850-900 MPa, a Weibull above about 15 and high fracture toughness (above about 8 and 9 MPa·m07-26-2012
20150099619CERAMIC MATERIAL FOR RADOME, RADOME AND PROCESS FOR THE PRODUCTION THEREOF - A ceramic material for radome is illustrated comprising: —about 80-95% (% wt) of Si04-09-2015
501970400 Composites (continuous matrix with dispersed phase) 2
20080220963SINTERED SILICON NITRIDE AND METHOD FOR PRODUCING THE SAME - A method for producing sintered silicon nitride, including preparing a slurry from a base powder containing a silicon nitride powder and a sintering aid, the base powder having a particle size (D09-11-2008
20100130345SILICON NITRIDE-MELILITE COMPOSITE SINTERED BODY AND DEVICE UTILIZING THE SAME - A silicon nitride-melilite composite sintered body in accordance with the invention includes silicon nitride and a melilite Me05-27-2010
501980100 Silicon aluminum oxynitride containing (i.e., SiAION compounds) 1
501980200 With rare earth or alkaline earth metal compound 1
20120190531ALPHA-BETA SIALON BALLISTIC ARMOR CERAMIC AND METHOD FOR MAKING THE SAME - A SiAlON armor ceramic made from a starting powder mixture including silicon nitride powder. The armor ceramic includes a ceramic body that has between about 64 weight percent and about 90 weight percent alpha SiAlON phase that contains an alpha SiAlON-bound rare earth element. The ceramic body also has between about 5 weight percent and about 35 weight percent of a beta SiAlON phase of the formula Si07-26-2012
501980400 Aluminum nitride containing (AIN) 9
20100093514Aluminum Nitride Sintered Body and Production Process for the Same - A high-purity aluminum nitride sintered body is provided by efficiently removing oxides contained in a raw material powder in producing an aluminum nitride sintered body and preventing composite oxide produced by reaction of oxides contained in the raw material powder with a sintering aid from remaining in the aluminum nitride sintered body. The above sintered body is achieved by an aluminum nitride sintered body having a concentration of residual oxygen excluding attached oxygen of 350 ppm or less.04-15-2010
20130035224Method for Making an Aluminum Nitride Substrate - Disclosed is a method for making an aluminum nitride substrate. At first, aluminum nitride is mixed with a carbonized material. The mixture is made into mixture powder in a granulation process. The mixture powder is sintered at an appropriate temperature so that the carbonized material reacts with oxygen to produce a gaseous carbon compound. The gaseous carbon compound is released, and hence an aluminum nitride substrate is made. Before the making of the aluminum nitride substrate is made, the aluminum nitride powder is mixed with the carbonized material. For the stable heat dispersion of the carbonized material, the heating is even during the sintering. The purity of the aluminum nitride substrate is high, the quality of the aluminum nitride substrate is good, and the size of the aluminum nitride substrate is large. Hence, the yield of the making of the aluminum nitride substrate is high.02-07-2013
20130296158PVD ALN FILM WITH OXYGEN DOPING FOR A LOW ETCH RATE HARDMASK FILM - The present invention generally relates to a doped aluminum nitride hardmask and a method of making a doped aluminum nitride hardmask. By adding a small amount of dopant, such as oxygen, when forming the aluminum nitride hardmask, the wet etch rate of the hardmask can be significantly reduced. Additionally, due to the presence of the dopant, the grain size of the hardmask is reduced compared to a non-doped aluminum nitride hardmask. The reduced grain size leads to smoother features in the hardmask which leads to more precise etching of the underlying layer when utilizing the hardmask.11-07-2013
501980500 With alkaline earth metal compound 4
20080200326ALUMINUM NITRIDE POWDER AND ALUMINUM NITRIDE SINTERED COMPACT - The present invention relates to an aluminum nitride sintered body which satisfies both high thermal conductivity and reduction in the shrinkage factor at the time of sintering. The aluminum nitride sintered body is a sintered body of a powder mixture containing an aluminum nitride powder and a sintering aid, characterized by having a thermal conductivity of at least 190 W/m·K and a shrinkage factor represented by the percentage of {(dimensions of the molded body before sintering)-(dimensions of the sintered body after sintering)}/(dimensions of the molded body before sintering) of at most 15%.08-21-2008
20080300128Process for Producing an Aluminum Nitride Sintered Body - An aluminum nitride sintered body having resistance to plasma gas and high thermal conduction and having excellent optical properties. The aluminum nitride sintered body of the present invention is characterized in that the proportion of positrons which are annihilated within a period of 180 ps (picoseconds) in the aluminum nitride crystal, as determined in the defect analysis using a positron annihilation method, is not less than 90%, and the sintered body preferably has a thermal conductivity of not less than 200 W/mK.12-04-2008
20120231945CERAMIC MATERIAL, MEMBER FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT, SPUTTERING TARGET MEMBER AND METHOD FOR PRODUCING CERAMIC MATERIAL - A ceramic material according to the present invention mainly contains magnesium, aluminum, oxygen, and nitrogen, the ceramic material has the crystal phase of a MgO—AlN solid solution in which aluminum nitride is dissolved in magnesium oxide, the crystal phase serving as a main phase. Preferably, XRD peaks corresponding to the (200) and (220) planes of the MgO—AlN solid solution measured with CuKα radiation appear at 2θ=42.9 to 44.8° and 62.3 to 65.2°, respectively, the XRD peaks being located between peaks of cubic magnesium oxide and peaks of cubic aluminum nitride. More preferably, the XRD peak corresponding to the (111) plane appears at 2θ=36.9 to 39°, the XRD peak being located between a peak of cubic magnesium oxide and a peak of cubic aluminum nitride.09-13-2012
20160376196THERMAL SPRAY COATING, MEMBER FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT, FEEDSTOCK MATERIAL FOR THERMAL SPRAY, AND METHOD FOR PRODUCING THERMAL SPRAY COATING - A thermal spray coating according to the present invention contains mainly magnesium, aluminum, oxygen, and nitrogen and has, as a main phase, a crystal phase of a MgO—AlN solid solution in which aluminum nitride is dissolved with magnesium oxide. The thermal spray coating is obtained by thermal spray of powder of a ceramic material containing mainly magnesium, aluminum, oxygen, and nitrogen and having, as a main phase, a crystal phase of a MgO—AlN solid solution in which aluminum nitride is dissolved with magnesium oxide.12-29-2016
501980600 Composites (continuous matrix with dispersed phase) 2
20080242531ALUMINUM NITRIDE SINTERED BODY AND SEMICONDUCTOR MANUFACTURING APPARATUS MEMBER - The aluminum nitride sintered body includes at least europium (Eu), aluminum (Al), and oxygen (O). It was found that a grain boundary phase having a peak having a X-ray diffraction profile substantially the same as that of an Sr10-02-2008
20090088312Aluminum Nitride Sinter, Slurry, Green Object, and Degreased Object - An aluminum nitride sinter includes aluminum nitride crystal grains and a grain boundary phase derived from a sintering aid. In any cross section in a surface region extending up to 100 μm from the surface of the sinter, the proportion of the area of a grain boundary phase having a circumscribed circle diameter of 1 μm or less to the total area of the grain boundary phase is at least 50%, and the average grain diameter of the aluminum nitride crystal grains is in the range of 3.0 to 7.0 μm. This aluminum nitride sinter can be produced from an aluminum nitride slurry having a specific grain size distribution, an aluminum nitride green object having a specific submerged density, or an aluminum nitride degreased object having a specific pore diameter.04-02-2009

Patent applications in all subclasses Boride, silicide, nitride, oxynitride, carbonitride, or oxycarbonitride containing

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