| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 451006000 | By optical sensor | 88 |
| 20080207089 | METHODS AND SYSTEMS FOR MONITORING A PARAMETER OF A MEASUREMENT DEVICE DURING POLISHING, DAMAGE TO A SPECIMEN DURING POLISHING, OR A CHARACTERISTIC OF A POLISHING PAD OR TOOL - Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, a characteristic of a polishing pad, or a characteristic of a polishing tool are provided. One method includes scanning a specimen with a measurement device during polishing of a specimen to generate output signals at measurement spots on the specimen. The method also includes determining if the output signals are outside of a range of output signals. Output signals outside of the range may indicate that a parameter of the measurement device is out of control limits. In a different embodiment, output signals outside of the range may indicate damage to the specimen. Another method includes scanning a polishing pad with a measurement device to generate output signals at measurement spots on the polishing pad. The method also includes determining a characteristic of the polishing pad from the output signals. | 08-28-2008 |
| 20080227367 | Substrate polishing metrology using interference signals - A method of polishing a substrate includes holding the substrate on a polishing pad with a polishing head, wherein the polishing pad is supported by a platen, creating relative motion between the substrate and the polishing pad to polish a side of the substrate, generating a light beam and directing the light beam towards the substrate to cause the light beam to impinge on the side of the substrate being polished. Light reflected from the substrate is at a detector to generate an interference signal. A measure of uniformity is computed from the interference signal. | 09-18-2008 |
| 20080242195 | CMP SYSTEM HAVING AN EDDY CURRENT SENSOR OF REDUCED HEIGHT - By providing an eddy current sensor element in a polishing tool at a reduced height level in combination with a corresponding optical endpoint detection system, standard polishing pads may be used, thereby enhancing the lifetime of the polishing pad and increasing tool utilization. | 10-02-2008 |
| 20080274670 | Substrate Peripheral Portion Measuring Device, and Substrate Peripheral Portion Polishing Apparatus - A projecting/receiving unit ( | 11-06-2008 |
| 20090011680 | Polishing state monitoring apparatus and polishing apparatus and method - A polishing state monitoring apparatus measures characteristic values of a surface, being polished, of a workpiece to determine the timing of a polishing end point. The polishing state monitoring apparatus includes a light-emitting unit for applying light from a light source to a surface of a workpiece being polished, a light-receiving unit for receiving reflected light from the surface of the workpiece, a spectroscope unit for dividing the reflected light received by the light-receiving unit into a plurality of light rays having respective wavelengths, and light-receiving elements for accumulating the detected light rays as electrical information. The polishing state monitoring apparatus further includes a spectral data generator for reading the electrical information accumulated by the light-receiving elements and generating spectral data of the reflected light, and a processor for calculating a predetermined characteristic value on the surface of the workpiece based on the spectral data generated by the spectral data generator. | 01-08-2009 |
| 20090029630 | Polishing pad, platen, method of monitoring, method of manufacturing, and method of detecting - A polishing pad, platen, method of monitoring, method of manufacturing, and method of detecting using a pseudo window area, where the pseudo window area has a thickness less than a thickness of a polishing layer and a thickness greater than zero. | 01-29-2009 |
| 20090042480 | POLISHING PAD AND POLISHING APPARATUS - A polishing pad forms a planar surface on glass, semiconductors, dielectric material/metal composites and integrated circuits, as well as a polishing apparatus where it is difficult for the surface of the substrate to be scratched, the state of polishing can be accurately measured optically during polishing, and whether or not the entire surface of the workpiece is uniformly polished can be measured. The polishing pad includes a through hole that connects the polishing surface and the rear surface in such a location as to pass through the center of the wafer during polishing, the end of the through hole closer to the center of the polishing pad is at a distance of no less than 35% of the radius from the center of the polishing pad, the length of the through hole in the direction of the center of the polishing pad is the same as or shorter than the length in the direction perpendicular to the direction of the center of the polishing pad, the length of the through hole in the direction of the center of the polishing pad is no more than 10% of the radius, and the length of the through hole in the direction perpendicular to the direction of the center of the polishing pad is no more than 12.5% of the radius. | 02-12-2009 |
| 20090061734 | Endpoint detection system for wafer polishing - An wafer polishing pad assembly for use in CMP includes an optical sensor for sensing reflectivity of the wafer during polishing, and produces a corresponding signal, and transmits the signal from the rotating pad to a stationary portion of the assembly. The signal is transmitting off the pad through non-contact couplings such inductive coupling or optical couplings after being converted into signal formats enabling non-contact transmission. | 03-05-2009 |
| 20090088047 | AUTOMATED SECTIONING TOMOGRAPHIC MEASUREMENT SYSTEM - A tomographic system includes a reporting device colocated and juxtaposed an object so that both are ground through grinding to various sectioning depths as the reporting device is ground down exposing a reporting marker along a length of the reporting device for indicating the depth of sectioning for accurate precise depth of grinding well suited for precise sectioned tomographic imaging. | 04-02-2009 |
| 20090093192 | DEVICE FOR AND METHOD OF POLISHING PERIPHERAL EDGE OF SEMICONDUCTOR WAFER - A device for polishing the peripheral edge part of a semiconductor wafer includes a wafer stage for holding the wafer, a wafer stage unit including devices for rotating the wafer stage, causing the wafer stage to undergo a rotary reciprocating motion within the same plane as the surface of the wafer stage, and moving the wafer stage parallel to the surface, a notch polishing part for polishing the notch on the wafer and a bevel polishing part for polishing the beveled part of the wafer. Pure water is supplied to the wafer to prevent it from becoming dry as it is transported from the notch polishing part to the bevel polishing part. | 04-09-2009 |
| 20090117828 | Polishing apparatus and substrate processing apparatus - The present invention relates to a polishing apparatus for removing surface roughness produced at a peripheral portion of a substrate, or for removing a film formed on a peripheral portion of a substrate. The polishing apparatus includes a housing ( | 05-07-2009 |
| 20090130955 | Loading Device of Chemical Mechanical Polishing Equipment for Semiconductor Wafers - A loading device of chemical mechanical polishing (CMP) equipment for processing semiconductor wafers is provided. The loading device includes a loading cup having a cup-like bath, a cup plate installed in the bath, and a loading plate supported on the cup plate for absorbing shock and seating the wafer. A driving device and a driving shaft horizontally pivot and vertically move the loading cup between a platen of a polishing apparatus and a spindle. An arm connects the loading cup and the driving shaft. At least one through hole is located in a mutually corresponding position of the bath, the cup plate, and the loading plate of the loading cup. A probe assembly optically detects a polished thickness at a polished point on the wafer. | 05-21-2009 |
| 20090130956 | Polishing apparatus and polishing method - A polishing apparatus makes it possible to polish and remove an extra conductive film while preventing the occurrence of erosion and without lowering of the throughput. The polishing apparatus includes: a polishing table having a polishing surface; a top ring for holding a workpiece having a surface conductive film, and pressing the conductive film against the polishing surface to polish the conductive film; an optical sensor for monitoring the polishing state of the conductive film by emitting light toward the conductive film of the workpiece held by the top ring, receiving reflected light from the conductive film, and measuring a change in the reflectance of the reflected light; and a control section for controlling a pressure at which the workpiece is pressed on the polishing surface. | 05-21-2009 |
| 20090137187 | Diagnostic Methods During CMP Pad Dressing and Associated Systems - A system for in-situ monitoring at least one aspect of a chemical mechanical planarization process can include a CMP pad, CMP pad dresser with at least a translucent portion, and an optical sensor. The optical sensor can be configured to optically engage the CMP pad through the translucent portion of the CMP pad dresser. Methods of monitoring chemical mechanical planarization processes can include using such CMP pad dresser to view a performance characteristic through the CMP pad dresser. | 05-28-2009 |
| 20090137188 | POLISHING PAD - A polishing pad provides excellent optical detection accuracy properties over a broad wavelength range (particularly at the short-wavelength side). A method for manufacturing a semiconductor device includes a process of polishing the surface of a semiconductor wafer with this polishing pad. The polishing pad has a polishing layer containing a polishing region and a light-transmitting region, wherein the light-transmitting region includes a polyurethane resin having an aromatic ring density of 2 wt % or less, and the light transmittance of the light-transmitting region is 30% or more in the overall range of wavelengths of 300 to 400 nm. | 05-28-2009 |
| 20090137189 | POLISHING PAD - An object of the present invention is to provide a polishing pad excellent in optical detection accuracy in a broad wavelength range (particularly at the short-wavelength side) and capable of preventing a slurry from leaking from the boundary between a polishing region and a light-transmitting region. Disclosed is a polishing pad including at least a transparent support film laminated on one side of a polishing layer including a polishing region and a light-transmitting region, wherein the light transmittance of an optical detection region containing at least the light-transmitting region and the transparent support film is 40% or more in the overall range of wavelengths of 300 to 400 nm. | 05-28-2009 |
| 20090142989 | Chemical-Mechanical Planarization Pad Having End Point Detection Window - A chemical mechanical polishing pad. The pad includes a surface and a polymer matrix capable of transmitting at least a portion of incident radiation. In addition, at least one embedded structure in the polymer matrix, including a portion of the pad where the embedded structure is not present, and a window integral to the pad defined by the portion of the pad where the embedded structure is not present. | 06-04-2009 |
| 20090142990 | METHOD FOR POLISHING A WORKPIECE - A polishing apparatus can supply a polishing liquid uniformly and efficiently to a surface to be polished of a workpiece. The polishing apparatus includes a polishing table having a polishing surface, and a top ring for holding a semiconductor wafer and pressing the semiconductor wafer against the polishing surface. The polishing apparatus also includes a polishing liquid supply port for supplying a polishing liquid to the polishing surface, and a moving mechanism for moving the polishing liquid supply port to distribute the polishing liquid uniformly over an entire surface of the workpiece due to relative movement of the workpiece and the polishing surface. | 06-04-2009 |
| 20090191790 | SUBSTRATE POLISHING APPARATUS - A substrate polishing apparatus for polishing a polishing surface of a substrate has a film thickness monitoring device for monitoring a state of a film thickness of a thin film on the polishing surface of the substrate during polishing. The apparatus includes a table, a polishing member fixed on a surface of the table, a substrate support member for pressing the substrate onto the polishing member, an optical system composed of an optical fiber for irradiating the polishing surface of the substrate with a light of irradiation and an optical fiber for receiving a reflected light reflected on the polishing surface of the substrate, an analysis-processing system for processing an analysis of the reflected light received with the optical system, and the film-thickness monitoring device. The table is provided with a liquid-feeding opening for feeding a translucent liquid into a through-hole disposed in the polishing member. | 07-30-2009 |
| 20090209175 | Polishing apparatus and substrate processing method - A polishing apparatus can detect escape of a substrate from a top ring during polishing. The polishing apparatus including: a polishing table ( | 08-20-2009 |
| 20090298388 | METHOD AND APPARATUS FOR CHEMICAL MECHANICAL POLISHING OF LARGE SIZE WAFER WITH CAPABILITY OF POLISHING INDIVIDUAL DIE - A novel polisher for chemical mechanical planarization process is described. The polisher design can have many variations. For process development and consumable evaluation, the CMP process can be performed on a single die or a section of the wafer. The size of testing wafer can be as small as 2″ and as large as 18″. Furthermore, several variations can characterize the slurry for their static etch rate, dynamic etch rate, material removal rate, and viscosity in a single experiment. For production level wafer processing, Chemical Mechanical Polishing of all dies on the wafer surface is achieved by using multi-armed polishing heads or a single polishing head with small piece of a pad at the bottom of the head. The within wafer uniformity can be easily controlled and the equipment can be easily scaled up or down. This inventive design may translate to significant cost reduction for wafer processing at production level as well as evaluation of consumables at research and development level. | 12-03-2009 |
| 20090305610 | MULTIPLE WINDOW PAD ASSEMBLY - A method and apparatus for detecting and obtaining a metric indicative of a polishing process is described. The apparatus includes a polishing pad having an optically transparent region adapted to obtain polishing metric from at least one substrate from at least two distinct radial positions of the polishing pad. The method includes obtaining a polishing metric from at least two substrates being polished simultaneously on a single polishing pad. | 12-10-2009 |
| 20090318061 | SYSTEMS AND PADS FOR PLANARIZING MICROELECTRONIC WORKPIECES AND ASSOCIATED METHODS OF USE AND MANUFACTURE - Planarizing systems and methods of planarizing microelectronic workpieces using mechanical and/or chemical-mechanical planarization are disclosed herein. In one embodiment, a planarizing system includes a platen having a support surface carrying a planarizing pad. The planarizing pad includes an optically transmissive window extending through the planarizing pad that forms a continuous segment of the planarizing pad. The system also includes a workpiece carrier configured to move the workpiece relative to the planarizing pad and an optical monitor positioned proximate to the platen. The optical monitor emits light through the window and detects reflected light from the workpiece through the window. | 12-24-2009 |
| 20090325465 | POLISHING APPARATUS, POLISHING METHOD, AND PROCESSING APPARATUS - The present invention provides a polishing apparatus and a polishing method capable of calculating outside diameters of rolls of a polishing tape on a polishing-tape supply reel and a polishing-tape recovery reel and capable of calculating a remaining amount of the polishing tape and a consumption of the polishing tape from the outside diameters of the rolls. This polishing apparatus includes a polishing-tape supply reel ( | 12-31-2009 |
| 20100022167 | Superfinish Machine with an Endless Polishing Band and Method for Operating a Superfinish Machine - A superfinish machine and a method for operating a superfinish machine are proposed, wherein monitoring an endless polishing band of the superfinish machine is possible. | 01-28-2010 |
| 20100022168 | SYSTEM, DEVICE AND METHOD FOR LEVELLING FLOORS - The present invention relates to a system, a device and a method for leveling floor surfaces by means of a floor grinding machine ( | 01-28-2010 |
| 20100035518 | CLOSED LOOP CONTROL OF PAD PROFILE BASED ON METROLOGY FEEDBACK - A chemical mechanical polishing apparatus includes a metrology system that detects the thickness of the polishing pad as semiconductor wafers are processed and the thickness of the polishing pad is reduced. The chemical mechanical polishing apparatus includes a controller that adjusts the rate of material removal of a conditioning disk when areas of the polishing surface are detected that are higher or lower than the adjacent areas of the polishing pad. | 02-11-2010 |
| 20100035519 | REMOVABLE OPTICAL MONITORING SYSTEM FOR CHEMICAL MECHANICAL POLISHING - A polishing system includes a platen having a top surface to receive a polishing pad, a recess in the top surface, and a cavity inside the platen spaced from the recess, a carrier head to hold a surface of a substrate against the polishing pad on the platen, a monitoring module located in the cavity, the monitoring module including a light source and a detector, an optical head removably mounted in the recess in the top surface platen, and an optical fiber having a proximate end coupled to the monitoring module and a distal end held by the optical head holding the distal end of the optical fiber in a position to direct light through a window in the polishing pad to the surface of the substrate and receive reflected light from the surface of the substrate. | 02-11-2010 |
| 20100056024 | STRUCTURED ABRASIVE ARTICLE, METHOD OF MAKING THE SAME, AND USE IN WAFER PLANARIZATION - A structured abrasive article comprises an at least translucent film backing and an abrasive layer disposed on the backing. The abrasive layer comprises a plurality of shaped abrasive composites. The shaped abrasive composites comprise abrasive particles dispersed in a binder. The abrasive particles consist essentially of ceria particles having an average primary particle size of less than 100 nanometers. The binder comprises a polyether acid and a reaction product of components comprising a carboxylic(meth)acrylate and a poly(meth)acrylate, and, based on a total weight of the abrasive layer, the abrasive particles are present in an amount of at least 70 percent by weight. Methods of making and using the structured abrasive article are also disclosed. | 03-04-2010 |
| 20100062685 | CMP System with Wireless Endpoint Detection System - A CMP polishing pad with an optical sensor assembly embedded in the pad, connected to a transceiver and/or power supply mounted at the center of the pad or at the outer edge of the pad which communicates wirelessly with a control system. | 03-11-2010 |
| 20100105290 | METHODS AND APPARATUS FOR INDICATING A POLISHING TAPE END - Apparatus and methods are provided for polishing a substrate with a polishing tape. The polishing tape includes a first surface adapted to contact a substrate; and a second surface, wherein at least one of the first and second surfaces include a feature adapted to indicate an end condition. Numerous other aspects are provided. | 04-29-2010 |
| 20100112902 | METHOD AND APPARATUS FOR PRECISION POLISHING OF OPTICAL COMPONENTS - A method of polishing objects using an apparatus comprised of a rotary positioning device comprising a turret; a base mounted on the turret; a drive wheel connected to a rotatable shaft, the drive wheel having a perimeter, and the rotatable shaft disposed in a housing. The polishing wheel assembly may include an elongated arm including a proximal end joined to the base, and a distal end; a rotatable polishing wheel supported at the end of the elongated arm; and a polishing belt comprising an inner surface and an outer surface, the inner surface engageable with the perimeters of the drive wheel and the polishing wheel. The method is comprised of contacting the outer surface of the polishing belt to a contact region of the surface of the object; and controlling the contact region by rotating the elongated arm around the turret axis. | 05-06-2010 |
| 20100136886 | POLISHING APPARATUS AND SUBSTRATE PROCESSING APPARATUS - The present invention relates to a polishing apparatus for removing surface roughness produced at a peripheral portion of a substrate, or for removing a film formed on a peripheral portion of a substrate. The polishing apparatus includes a housing for forming a polishing chamber therein, a rotational table for holding and rotating a substrate, a polishing tape supply mechanism for supplying a polishing tape into the polishing chamber and taking up the polishing tape which has been supplied to the polishing chamber, a polishing head for pressing the polishing tape against a bevel portion of the substrate, a liquid supply for supplying a liquid to a front surface and a rear surface of the substrate, and a regulation mechanism for making an internal pressure of the polishing chamber being set to be lower than an external pressure of the polishing chamber. | 06-03-2010 |
| 20100144244 | ENDPOINT DETECTION SYSTEM FOR WAFER POLISHING - An wafer polishing pad assembly for use in CMP includes an optical sensor for sensing reflectivity of the wafer during polishing, and produces a corresponding signal, and transmits the signal from the rotating pad to a stationary portion of the assembly. The signal is transmitting off the pad through non-contact couplings such inductive coupling or optical couplings after being converted into signal formats enabling non-contact transmission. | 06-10-2010 |
| 20100184357 | Polishing Pad and System with Window Support - A polishing system includes a polishing pad having a solid light-transmissive window, an optical fiber having an end, and a spacer having a vertical aperture therethrough. A bottom surface of the spacer contacts the end of the optical fiber, a top surface of the spacer contacts the underside of the window, and the vertical aperture is aligned with the optical fiber. | 07-22-2010 |
| 20100216373 | METHOD FOR CMP UNIFORMITY CONTROL - A method for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising a solid crescent shaped injector the concave trailing edge of which is fitted to the size and shape of leading edge of the polishing head with a gap of between 0 and 3 inches, the bottom surface facing the pad, which rests on the pad with a light load, and through which CMP slurry or components thereof are introduced through one or more openings in the top of the injector and travel through a channel or reservoir the length of the device to the bottom where it or they exit multiple openings in the bottom of the injector, are spread into a thin film, and are introduced at the junction of the surface of the polishing pad and the wafer along the leading edge of the wafer in quantities small enough that all or most of the slurry is introduced between the wafer and the polishing pad, wherein multiple inlets for the introduction of fluids to different points in the channel or directly to the bottom surface of the injector are utilized and some or all of which inlets are fitted with means for controlling the flow of fluid and adjustment is made to the said flow control means during or after polishing to adjust slurry delivery to the wafer surface to improve uniformity of removal rate at the wafer surface. | 08-26-2010 |
| 20100248591 | BELT GRINDING MACHINE TOOL WITH DEVICE FOR CONTROLLING THE POSITION OF THE ABRASIVE BELT - A belt grinding machine tool with an operating head comprising an endless abrasive belt wound and stretched between at least two spaced rollers arranged parallel one another, of which a first is a driving roller and a second is a tensioning roller being supported to be adjustable in a direction which is substantially perpendicular to its axis of rotation. A device is provided for controlling the position of the abrasive belt which consists of at least a position sensor for sensing the position of the abrasive belt and at least an actuator for adjusting the position of the tensioning roller, in dependence of the position of the abrasive belt being sensed by the position sensor. The position sensor is a fork shaped optical sensor, or an optical sensor having an operatively equivalent shape, and the actuator is an electric drive. | 09-30-2010 |
| 20100279585 | METHOD OF MAKING AND APPARATUS HAVING WINDOWLESS POLISHING PAD AND PROTECTED FIBER - A polishing system includes a polishing pad with an aperture that extends through all layers of the polishing pad and a light transmissive film positioned on top of a light-generating or light-guiding element of an optical monitoring system. | 11-04-2010 |
| 20100330879 | LEAK PROOF PAD FOR CMP ENDPOINT DETECTION - In one aspect, a polishing pad includes a homogeneous unitary polishing layer having a polishing surface, an opposed bottom surface, a recess in the polishing surface extending partially but not entirely through the polishing layer, and a solid light-transmissive window is secured in the recess. In another aspect, a polishing pad includes a polishing layer having a polishing surface, and the polishing surface includes a first region having a first plurality of grooves with a first depth extending partially but not entirely through the polishing layer and a second region surrounded by the first region and having a second plurality of grooves with a second depth extending partially but not entirely through the polishing layer, the second depth greater than the first depth. | 12-30-2010 |
| 20110009031 | METHOD AND DEVICE FOR MACHINING WORKPIECES - The device for carrying out the present method is configured as a machining unit having a device ( | 01-13-2011 |
| 20110081829 | POLISHING ENDPOINT DETECTION METHOD AND POLISHING ENDPOINT DETECTION APPARATUS - Method and apparatus for detecting an accurate polishing endpoint of a substrate based on a change in polishing rate are provided. The method includes: applying a light to the surface of the substrate and receiving a reflected light from the substrate; obtaining a plurality of spectral profiles at predetermined time intervals, each spectral profile indicating reflection intensity at each wavelength of the reflected light; selecting at least one pair of spectral profiles, including a latest spectral profile, from the plurality of spectral profiles obtained; calculating a difference in the reflection intensity at a predetermined wavelength between the spectral profiles selected; determining an amount of change in the reflection intensity from the difference; and determining a polishing endpoint based on the amount of change. | 04-07-2011 |
| 20110130073 | WAFER POLISHING METHOD AND DOUBLE-SIDE POLISHING APPARATUS - The present invention is a wafer polishing method including simultaneously polishing both surfaces of a wafer by pressing and rubbing the wafer, while holding the wafer with: a lower turn table having a flat polishing-upper-surface rotationally driven; an upper turn table having a flat polishing-lower-surface rotationally driven, the upper turn table being arranged with facing to the lower turn table; and a carrier having a wafer-holding hole for holding the wafer, wherein the polishing is performed while measuring a thickness of the wafer through a plurality of openings provided between a rotation center and an edge of the upper turn table or the lower turn table, and switching a polishing slurry with a polishing slurry having a different polishing rate during the polishing of the wafer. As a result, there is provided a wafer polishing method that can manufacture a wafer having a high flatness and a high smoothness at high productivity and high yield. | 06-02-2011 |
| 20110171883 | CMP pad with local area transparency - A CMP polishing pad comprising (a) a polishing layer having a polishing surface and a back surface opposite said polishing surface; said polishing layer having at least one cured opaque thermoset polyurethane region and at least one aperture region; said at least one cured opaque thermoset region has a porosity from about 10% to about 55% by volume; said at least one aperture region having (1) a top opening positioned below the polishing surface, (2) a bottom opening that is co-planar with said back surface and (3) straight line vertical sidewalls extending from said aperture top opening to said aperture bottom opening; said at least one aperture region filled with a cured plug of thermoset polyurethane local area transparency material that has a light transmission of less than 80% at a wavelength from 700 to 710 nanometers and is chemically bonded directly to a thermoset polyurethane opaque area;
| 07-14-2011 |
| 20110177758 | Creep-resistant polishing pad window - The polishing pad is useful for polishing at least one of magnetic, optical and semiconductor substrates. The polishing pad includes a polishing layer having a polyurethane window. The polyurethane window has a cross-linked structure formed with an aliphatic or cycloaliphatic isocyanate and a polyol in a prepolymer mixture. The prepolymer mixture is reacted with a chain extender having OH or NH | 07-21-2011 |
| 20120009849 | POLISHING END POINT DETECTION METHOD, POLISHING END POINT DETECTION APPARATUS, AND POLISHING APPARATUS - A polishing end point detection method is to detect a polishing end point of a workpiece having a multilayer structure. The method is performed by emitting a first light and a second light to a surface of the workpiece at a first angle of incidence and a second angle of incidence, respectively, receiving the first light and the second light reflected from the surface through a polarizing filter, performing a first analyzing process of analyzing a brightness and a saturation of the surface from the first light received, performing a second analyzing process of analyzing a brightness and a saturation of the surface from the second light received, and determining removal of the upper layer based on changes in the brightness and the saturation of the surface. | 01-12-2012 |
| 20120021671 | REAL-TIME MONITORING OF RETAINING RING THICKNESS AND LIFETIME - A method and apparatus for monitoring the condition of a surface of a retaining ring disposed on a carrier head in a polishing module is described. In one embodiment, a method for monitoring at least one surface of a retaining ring coupled to a carrier head is provided. The method includes moving the carrier head adjacent a sensor device disposed in a polishing module, transmitting energy from the sensor device toward the retaining ring, receiving energy reflected from the retaining ring, and determining a condition of the retaining ring based on the received energy. | 01-26-2012 |
| 20120021672 | Tracking Spectrum Features In Two Dimensions For Endpoint Detection - A method of polishing includes polishing a substrate, receiving an identification of a selected spectral feature to monitor during polishing, measuring a sequence of spectra of light reflected from the substrate while the substrate is being polished, determining a location value and an associated intensity value of the selected spectral feature for each of the spectra in the sequence of spectra to generate a sequence of coordinates, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the sequence of coordinates. At least some of the spectra of the sequence differ due to material being removed during the polishing, and the coordinates are pairs of location values and associated intensity values. | 01-26-2012 |
| 20120064801 | Feedback Control of Polishing Using Optical Detection of Clearance - A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure. | 03-15-2012 |
| 20120077418 | Chemical Mechanical Polishing Pad With Light Stable Polymeric Endpoint Detection Window And Method Of Polishing Therewith - A chemical mechanical polishing pad is provided, comprising: a polishing layer having a polishing surface; and, a light stable polymeric endpoint detection window, comprising: a polyurethane reaction product of an aromatic polyamine containing amine moieties and an isocyanate terminated prepolymer polyol containing unreacted —NCO moieties; and, a light stabilizer component comprising at least one of a UV absorber and a hindered amine light stabilizer; wherein the aromatic polyamine and the isocyanate terminated prepolymer polyol are provided at an amine moiety to unreacted —NCO moiety stoichiometric ratio of <95%; wherein the light stable polymeric endpoint detection window exhibits a time dependent strain of ≦0.02% when measured with a constant axial tensile load of 1 kPa at a constant temperature of 60° C. at 100 minutes and an optical double pass transmission of ≧15% at a wavelength of 380 nm for a window thickness of 1.3 mm; and, wherein the polishing surface is adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate. Also provided is a method of polishing a substrate (preferably a semiconductor wafer) using the chemical mechanical polishing pad provided. | 03-29-2012 |
| 20120100781 | MULTIPLE MATCHING REFERENCE SPECTRA FOR IN-SITU OPTICAL MONITORING - A method of controlling polishing includes storing a plurality libraries, each library including a plurality of reference spectra, polishing a substrate, measuring a sequence of spectra of light from the substrate during polishing, and for each measured spectrum of the sequence of spectra, finding a best matching first reference spectrum from a first library from the plurality of libraries and finding a best matching second reference spectrum from a different second library from the plurality of libraries, determining a first value associated with the best matching first reference spectrum and determining a second value from the best matching second reference spectrum, and calculating a third value from the first value and the second value to generate a sequence of calculated third values. At least one of a polishing endpoint or an adjustment for a polishing rate can be determined based on the sequence of calculated third values. | 04-26-2012 |
| 20120122374 | GRINDING DEVICE FOR ROLLERS - A grinding device for the surface treatment of rolls, for example of rolls for machines producing, finishing and/or processing webs, such as paper, cardboard or tissue machines, includes stationary components and mobile components which can be separated from each other. The stationary components include guide rails, which extend substantially in parallel to a roll axis of the roll to be treated and which are connected to a substructure. Thus, the stationary components, such as the guide rails, can remain at the place of use of the rolls, while the components that are mobile or can be transported can be easily separated from the stationary components and can be transported to other locations. | 05-17-2012 |
| 20120164917 | POLISHING APPARATUS AND POLISHING METHOD - A polishing apparatus for polishing a substrate is provided. The polishing apparatus includes: a polishing table holding a polishing pad; a top ring configured to press the substrate against the polishing pad; first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate; spectroscopes each configured to measure at each wavelength an intensity of the reflected light received; and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate. | 06-28-2012 |
| 20120164918 | Chemical Mechanical Polish Process Control for Improvement in Within-Wafer Thickness Uniformity - A method of performing chemical mechanical polish (CMP) processes on a wafer includes providing the wafer; determining a thickness profile of a feature on a surface of the wafer; and, after the step of determining the thickness profile, performing a high-rate CMP process on the feature using a polish recipe to substantially achieve a within-wafer thickness uniformity of the feature. The polish recipe is determined based on the thickness profile. | 06-28-2012 |
| 20120196511 | Gathering Spectra From Multiple Optical Heads - A polishing apparatus includes a platen to hold a polishing pad having a plurality of optical apertures, a carrier head to hold a substrate against the polishing pad, a motor to generate relative motion between the carrier head and the platen, and an optical monitoring system. The optical monitoring system includes at least one light source, a common detector, and an optical assembly configured to direct light from the at least one light source to each of a plurality of separated positions in the platen, to direct light from each position of the plurality of separated positions to the substrate as the substrate passes over said each position, to receive reflected light from the substrate as the substrate passes over said each position, and to direct the reflected light from each of the plurality of separated positions to the common detector. | 08-02-2012 |
| 20120258649 | Method of Making and Apparatus Having Windowless Polishing Pad and Protected Fiber - A polishing system includes a polishing pad with an aperture that extends through all layers of the polishing pad and a light transmissive film positioned on top of a light-generating or light-guiding element of an optical monitoring system. | 10-11-2012 |
| 20120264354 | DISTANCE MONITORING DEVICE - A distance monitoring device is provided. The device is suitable for a chemical mechanical polishing (CMP) apparatus. A polishing head of the CMP apparatus includes a frame and a membrane. The membrane is mounted on the frame, and a plurality of air bags is formed by the membrane and the frame in the polishing head. The distance monitoring device includes a plurality of distance detectors disposed on the frame corresponding to the air bags respectively to set a location of each of the distance detectors on the frame as a reference point, wherein each of the distance detectors is configured to measure a distance between each of the reference points and the membrane. | 10-18-2012 |
| 20120289124 | ENDPOINT DETECTION USING SPECTRUM FEATURE TRAJECTORIES - A method of polishing includes polishing a substrate, making a sequence of measurements of light reflected from the substrate while the substrate is being polished, at least some of the measurements of the sequence of measurements differing due to material being removed during polishing, for each measurement in the sequence, determining a first value of a first characteristic and a second value of a different second characteristic of the light to generate a sequence of first values and second values, storing a predetermined path in a coordinate space of the first characteristic and the second characteristic, for each measurement in the sequence, determining a position on the path based on the first value and the second value, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the position on the path. | 11-15-2012 |
| 20120309266 | APPARATUS AND METHOD FOR GRINDING ROTARY BLADES - The present disclosure relates to apparatus for grinding rotary blades, in particular scythe-like blades or circular blades, in particular for machines for slicing food products. The apparatus includes at least one mount for a rotary blade to which the rotary blade can be attached and at least one grinding tool. The grinding tool and the rotary blade attached in the mount are movable relative to one another such that a blade edge extending at the periphery of the rotary blade can be ground by the grinding tool. The apparatus includes a measuring device for determining the extent of the blade edge and a control which is designed to use the determined blade edge extent for controlling the relative movement between the grinding tool and the rotary blade. | 12-06-2012 |
| 20130017764 | POLISHING PAD WITH APERTUREAANM Allison; William C.AACI BeavertonAAST ORAACO USAAGP Allison; William C. Beaverton OR USAANM Scott; DianeAACI PortlandAAST ORAACO USAAGP Scott; Diane Portland OR USAANM Bajaj; RajeevAACI FremontAAST CAAACO USAAGP Bajaj; Rajeev Fremont CA US - Polishing pads with apertures are described. Methods of fabricating polishing pads with apertures are also described. | 01-17-2013 |
| 20130149938 | METHOD OF MAKING DIAGRAM FOR USE IN SELECTION OF WAVELENGTH OF LIGHT FOR POLISHING ENDPOINT DETECTION, METHOD AND APPARATUS FOR SELECTING WAVELENGTH OF LIGHT FOR POLISHING ENDPOINT DETECTION, POLISHING ENDPOINT DETECTION METHOD, POLISHING ENDPOINT DETECTION APPARATUS, AND POLISHING MONITORING METHOD - A method of producing a diagram for use in selecting wavelengths of light in optical polishing end point detection is provided. The method includes polishing a surface of a substrate having a film by a polishing pad; applying light to the surface of the substrate and receiving reflected light from the substrate during the polishing of the substrate; calculating relative reflectances of the reflected light at respective wavelengths; determining wavelengths of the reflected light which indicate a local maximum point and a local minimum point of the relative reflectances which vary with a polishing time; identifying a point of time when the wavelengths, indicating the local maximum point and the local minimum point, are determined; and plotting coordinates, specified by the wavelengths and the point of time corresponding to the wavelengths, onto a coordinate system having coordinate axes indicating wavelength of the light and polishing time. | 06-13-2013 |
| 20130178134 | ABRADING ARRANGEMENT TO ABRADE A SURFACE OF AN ITEM AND METHOD OF USE THEREOF - An abrasion arrangement is disclosed to abrade a surface of an item, the arrangement comprising a multiple axis robotic arm having at least five axes, an abrading cylinder mounted on the robotic arm and comprising abrasive means which comprise abrasive lamellae of an abrasive sheet, such as abrasive cloth, of which the front side has abrasive properties and which extend substantially radially from an elongated core and means for driving said core to rotate around a longitudinal axis of the core, and control means for controlling the operation of the robotic arm so to control e.g. the position of the abrading cylinder on said surface, the force with which the abrading cylinder is pressed towards said surface and the velocity with which the abrading cylinder is moved with respect to said surface. | 07-11-2013 |
| 20130183886 | POLISHING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE EMPLOYING THIS POLISHING APPARATUS, AND SEMICONDUCTOR DEVICE MANUFACTURED BY THIS METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - While data that indicate a relationship between a dressing position P defined by a distance between a rotating shaft | 07-18-2013 |
| 20130237129 | Detecting Membrane Breakage in a Carrier Head - A chemical mechanical polishing system includes a carrier head having a flexible membrane and a chamber to apply pressure to the flexible membrane, a pressure control unit, a pressure supply line connecting the pressure control unit to the chamber, and a sensor located along the pressure supply line to detect a contaminant in the pressure supply line. | 09-12-2013 |
| 20130260644 | METHOD AND DEVICE FOR MACHINING WORKPIECES - A method for grinding the surface of non-round workpieces. The method includes the steps of clamping a workpiece within a machining unit; machining the workpiece; without unclamping the workpiece, contactlessly measuring the workpiece using an optical measuring device having a conoscopic holography sensor with a characteristic measuring range; and machining and measuring the workpiece in an alternating manner to iteratively approach the desired measurements of a specified form by adjusting the distance between the optical measuring device and the surface of the workpiece depending on there being a deviation of the surface from the specified form so that a respectively measured area of the surface of the workpiece remains within the measuring range of the optical sensor. | 10-03-2013 |
| 20130273813 | POLISHING PAD WITH LIGHT-STABLE LIGHT-TRANSMITTING REGION - The invention provides a polishing pad that contains at least one light-transmitting region and optionally a polishing pad body. The light-transmitting region is composed of a material comprising (a) a polymeric resin and (b) at least one light-absorbing compound, and the light-transmitting region has a total light transmittance of about 25% or more at one or more wavelengths in a range of 250 nm to 395 nm. | 10-17-2013 |
| 20130273814 | POLISHING APPARATUS AND POLISHING METHOD - A polishing apparatus polishes a substrate having a film formed thereon. A sensor is disposed in a polishing table that supports a polishing pad thereon. The polishing apparatus is configured to perform an idling process in which polishing of the substrate on the polishing pad does not progress substantially, while rotating the polishing table and the substrate. The sensor obtains the film thickness data, which varies in accordance with a thickness of the film, while the idling process is performed. A processor calculates, from the film thickness data, a polishing index value indicating the progress of polishing of the film. | 10-17-2013 |
| 20130337723 | METHOD AND APPARATUS FOR POLISHING WORKPIECE - In a polishing method of the present invention, the temperature of a carrier plate is measured, and the amount of polishing removal of a workpiece (workpiece) is accurately controlled based on change in the measured temperature of the carrier plate. | 12-19-2013 |
| 20140024294 | POLISHING ENDPOINT DETECTION METHOD AND POLISHING ENDPOINT DETECTION APPARATUS - Method and apparatus for detecting an accurate polishing endpoint of a substrate based on a change in polishing rate are provided. The method includes: applying a light to the surface of the substrate and receiving a reflected light from the substrate; obtaining a plurality of spectral profiles at predetermined time intervals, each spectral profile indicating reflection intensity at each wavelength of the reflected light; selecting at least one pair of spectral profiles, including a latest spectral profile, from the plurality of spectral profiles obtained; calculating a difference in the reflection intensity at a predetermined wavelength between the spectral profiles selected; determining an amount of change in the reflection intensity from the difference; and determining a polishing endpoint based on the amount of change. | 01-23-2014 |
| 20140065928 | EDGE GRINDING APPARATUS AND METHOD FOR GRINDING GLASS SUBSTRATE - An edge grinding apparatus and method for grinding a glass substrate, with which a glass substrate can be ground by a fixed amount and the occurrence of defects can be minimized. The edge grinding apparatus includes an edge grinding unit which grinds a cut edge of a glass substrate while following the cut edge; a measuring unit which obtains positional information of the cut edge; and a control unit which receives the positional information of the cut edge from the measuring unit and controls a position of the edge grinding unit based on the positional information of the cut edge. | 03-06-2014 |
| 20140113528 | METHOD FOR MANUFACTURING AN OPTICAL COMPONENT FOR ELIMINATING SURFACE DEFECTS - Method for manufacturing an optical component, including a substrate made of a fusible material, includes the following steps a) and b) of steps a), b) and c), or steps a), b), c) and d): a) roughing; b) fine grinding; c) polishing; and d) finishing. The method includes steps, subsequent to any one of steps b), c) and/or d): e) inspecting the optical surface of the optical component; f) detecting and locating at least one surface defect to be eliminated; g) for each surface defect, applying a laser beam to an area emcompassing the defect, so as to produce a local remelting of the fusible material, and to form, at the location of the defect, an area of material remelted; h) polishing the optical surface including at least one area of remelted material, to produce a polished optical surface free of surface defects, and continuing with steps c) and d). | 04-24-2014 |
| 20140120802 | ABRASIVE PLATEN WAFER SURFACE OPTICAL MONITORING SYSTEM - Flat-surfaced workpieces such as semiconductor wafers are held in flat-surfaced abrading contact with the abrasive surface of a flexible raised-island disk that is attached to a flat-surfaced rotating platen. There are recessed areas between the abrasive-coated raised islands where light can transmitted through the transparent backings. Platens are constructed with open passageways that extend radially from the outer periphery of the platen to the area that is under the abraded wafer. Stationary light sources are directed radially to the platen edge where they enter the open passageways to impinge on mirrors that direct the light to contact the surface of the wafer. The light beams reflected from the wafer surface are directed with mirrors back to a stationary light-receiver positioned at the outer periphery of the platen. The light-receiver device allows abraded condition of the flat surface of the wafer to be monitored during the abrasive lapping or polishing procedure. | 05-01-2014 |
| 20140206259 | REFLECTIVITY MEASUREMENTS DURING POLISHING USING A CAMERA - A substrate polishing system includes a platen to support a polishing surface, a carrier head configured to hold a substrate against the polishing surface during polishing, a light source configured to direct a light beam onto a surface of the substrate, a detector including an array of detection elements, and a controller. The detector is configured to detect reflections of the light beam from an area of the surface, and is configured to generate an image having pixels representing regions on the substrate having a length less than 0.1 mm. The controller is configured to receive the image and to detect clearance of a metal layer from an underlying layer on the substrate based on the image. | 07-24-2014 |
| 20140242883 | DETERMINATION OF WAFER ANGULAR POSITION FOR IN-SEQUENCE METROLOGY - A polishing apparatus includes a carrier head configured to hold a wafer in a first plane, the wafer having a perimeter and a fiducial, a drive shaft having an axis perpendicular to the first plane and configured to rotate the carrier head about the axis, a light source configured to direct light onto an outer face of the wafer at a position adjacent the perimeter of the wafer; a detector configured to detect the light collected from the wafer while the drive shaft rotates the carrier head and the wafer; and a controller configured to receive a first signal indicating an angular position of the drive shaft and receive a second signal from the detector, the controller configured to determine based on the first signal and the second signal an angular position of the fiducial with respect the carrier head. | 08-28-2014 |
| 20140256225 | Chemical Mechanical Polishing Pad With Broad Spectrum, Endpoint Detection Window and Method of Polishing Therewith - A chemical mechanical polishing pad is provided, comprising: a polishing layer having a polishing surface; and, a broad spectrum, endpoint detection window block having a thickness along an axis perpendicular to a plane of the polishing surface; wherein the broad spectrum, endpoint detection window block, comprises a cyclic olefin addition polymer; wherein the broad spectrum, endpoint detection window block exhibits a uniform chemical composition across its thickness; wherein the broad spectrum, endpoint detection window block exhibits a spectrum loss ≦40%; and, wherein the polishing surface is adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate. | 09-11-2014 |
| 20140256226 | Broad spectrum, endpoint detection window chemical mechanical polishing pad and polishing method - A chemical mechanical polishing pad is provided, comprising: a polishing layer having a polishing surface; and, a broad spectrum, endpoint detection window block having a thickness along an axis perpendicular to a plane of the polishing surface; wherein the broad spectrum, endpoint detection window block, comprises an olefin copolymer; wherein the olefin copolymer, comprises, as initial components: ethylene, a branched or straight chain C | 09-11-2014 |
| 20140273752 | PAD CONDITIONING PROCESS CONTROL USING LASER CONDITIONING - A method and apparatus for conditioning a polishing pad used in a substrate polishing process. In one embodiment, a method for conditioning a polishing pad utilized to polish a substrate is provided. The method includes providing relative motion between an optical device and a polishing pad having a polishing medium disposed thereon, and scanning a processing surface of the polishing pad with a laser beam to condition the processing surface, wherein the laser beam has a wavelength that is substantially transparent to the polishing medium, but is reactive with the material of the polishing pad. | 09-18-2014 |
| 20140273753 | POLISHING APPARATUS AND POLISHING METHOD - A polishing apparatus polishes a surface of a substrate by pressing the substrate against a polishing pad on a polishing table. The polishing apparatus includes a polishing liquid supply nozzle for supplying a polishing liquid onto the polishing pad, a polishing liquid storage mechanism disposed on the polishing pad for storing the polishing liquid on the polishing pad by damming the polishing liquid, and a polishing liquid sensor for measuring a physical quantity representing the freshness of the polishing liquid stored by the polishing liquid storage mechanism. The polishing apparatus further includes a freshness measuring instrument for calculating the freshness of the stored polishing liquid from the physical quantity measured by the polishing liquid sensor, and a freshness controller for controlling supply conditions of the polishing liquid or storage state of the polishing liquid, based on the freshness of the polishing liquid that is determined by the freshness measuring instrument. | 09-18-2014 |
| 20140357160 | METHOD AND APPARATUS OF SYMMETRICALLY CHAMFERING SUBSTRATE - A method of symmetrically chamfering a substrate includes repeating, at least a plurality of times, the steps of chamfering an edge of the substrate using a chamfering wheel, measuring an asymmetric chamfering deviation (y) of the edge of the substrate which is chamfered, and controlling a relative position of the chamfering wheel with respect to the substrate by a value of a function f(y) of the variable y. It is possible to constantly symmetrically chamfer the edge of the substrate via active response to a change in the chamfering environment without a hardware-based operation of the related art. | 12-04-2014 |
| 20140364039 | Method of Manufacturing an Optical Lens - A method of manufacturing an optical lens, comprising: providing a lens member comprising a first surface and a first reference system identified by engraved markings on the first surface, providing surface data corresponding to a second surface of the optical lens to be manufactured, providing second markings on the lens member defining a second reference system, providing marking positioning error between the second markings and the engraved markings, providing an adhesive tape on the first surface of the lens member, and a manufacturing step during which the second surface of the optical lens is manufactured according to the surface data and the marking positioning error such that the relative position of the first and second surfaces is respected. | 12-11-2014 |
| 20150031271 | DOUBLE-SIDE POLISHING APPARATUS - A wafer polishing apparatus configured to polish simultaneously both surfaces of a wafer by pressing and rubbing the wafer, while holding the wafer with: a lower turn table having a flat polishing-upper-surface rotationally driven; an upper turn table having a flat polishing-lower-surface rotationally driven, the upper turn table being arranged with facing to the lower turn table; and a carrier having a wafer-holding bole for holding the wafer, wherein the polishing is performed while measuring a thickness of the wafer through a plurality of openings provided between a rotation center and an edge of the upper turn table or the lower turn table, and switching a polishing slurry with a polishing slurry having a different polishing rate during the polishing of the wafer. As a result, the wafer polishing apparatus can manufacture a wafer having a high flatness and a high smoothness at high productivity and high yield. | 01-29-2015 |
| 20150056891 | MEASURING METHOD OF SURFACE ROUGHNESS OF POLISHING PAD - There is disclosed a measuring method of a surface roughness of a polishing pad which can measure a surface roughness index of the polishing pad showing a strong relationship with polishing performance. A method for measuring a surface roughness of a polishing pad includes acquiring an image of a surface of a polishing pad by using a laser microscope, selecting only a region which has a height larger than an average height from the acquired image, and calculating a surface roughness from only the selected region. | 02-26-2015 |
| 20150072594 | METHOD FOR DETECTING A POLISHING COMPOUND AND RELATED SYSTEM AND COMPUTER PROGRAM PRODUCT - Manufacturing methods are provided. A component may be polished to remove defects thereon. An identifier may be added to the polishing material employed to polish the component. A detector may detect the identifier. For example, the identifier may be a fluroescing material that may illuminate in the presence of a fluorescent light. A determining apparatus may determine a status of the component based on the presence or absence of the identifier. For example, the determining apparatus may determine that the component needs to be re-cleaned based on presence of the identifier. Related systems and computer program products are also provided. | 03-12-2015 |
| 20150079878 | POLISHING PAD WITH APERTURE - Polishing pads with apertures are described. Methods of fabricating polishing pads with apertures are also described. | 03-19-2015 |
| 20150099425 | Automated Sanding System - A method and apparatus for sanding a number of surface features on a surface of an object. A first type of operation may be performed on the number of surface features on the surface of the object using a first end effector. Feedback laser data may be generated about the number of surface features after the first type of operation has been performed using a laser device. A second type of operation may be performed on the number of surface features using a second end effector and the feedback laser data to rework the number of surface features until the number of surface features has been reworked to within selected tolerances. | 04-09-2015 |
| 20150290764 | THERMOGRAPHIC CHARACTERIZATION FOR SURFACE FINISHING PROCESS DEVELOPMENT - A method and system for observing and monitoring thermal characteristics of a machining operation, such as a surface finishing operation, performed on a workpiece is disclosed. The surface finishing operation can be performed on the workpiece in order to remove a surface defect, e.g. a parting line, on a surface of the workpiece and/or to provide a mirror-like finish to the workpiece. In one embodiment, an emissive layer is applied to the workpiece to increase a thermal emissivity of the workpiece. In some embodiments, a finishing surface, such as a polishing or buffing wheel, and/or a lubricant used in a finishing operation is monitored. A thermal profile of the surface of the workpiece, finishing surface and/or lubricant can be obtained. The finishing operation can be modified in response to the monitored thermal characteristics to prevent the occurrence of defects and improve the efficacy of the finishing operation. | 10-15-2015 |
| 20150306725 | GRINDING MACHINE FOR BEARING RINGS AND METHOD FOR SETTING TANGENCY CONDITIONS IN SUCH A MACHINE - A grinding machine for bearing rings includes a frame, a rotating grinding wheel rotationally movable around a first rotation axis, a working station where a bearing ring stands during a surface grinding operation, a chuck for holding a bearing ring, the chuck being rotationally movable around a second rotation axis. The machine includes a first automatic mechanism to set the position of a shaping tool with respect to an outer peripheral edge of the grinding wheel, these first automatic mechanism includes an electric motor, an encoder coupled to the electric motor to detect a rotation of an output shaft of the motor, a sensor of the position of the shaping tool along a translation axis and a comparator to compare output signals from each of the encoder and the sensor. The machine also includes second automatic mechanism to set the axial position of the chuck along the second rotation axis. | 10-29-2015 |
| 20150314415 | SERIAL FEATURE TRACKING FOR ENDPOINT DETECTION - A method of controlling polishing includes polishing a substrate having a second layer overlying a first layer, detecting exposure of the first layer with an in-situ monitoring system, receiving an identification of a selected spectral feature and a characteristic of the selected spectral feature to monitor during polishing, measuring a sequence of spectra of light from the substrate while the substrate is being polished, determining a first value for the characteristic of the feature at the time that the first in-situ monitoring technique detects exposure of the first layer, adding an offset to the first value to generate a second value, and monitoring the characteristic of the feature and halting polishing when the characteristic of the feature is determined to reach the second value. | 11-05-2015 |
| 20150360338 | MACHINING SYSTEM HAVING A TOOL FOR FINISHING AIRFOILS - An abrasive profiling tool that may be part of a robotic machining system for machining a trailing edge of an airfoil, includes a shank extending along a rotational axis, a bearing guide rotationally secured to a distal end of the shank for riding upon the airfoil; and an abrasive profiler projecting radially and rigidly outward from the shank for grinding at least the trailing edge as the shank rotates. The profiler may include a round-over portion for grinding the trailing edge and a chamfered blending portion for grinding adjacent surfaces of the airfoil to produce a smooth transition from the adjacent surfaces and to the trailing edge. | 12-17-2015 |
