| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 432018000 | Subjecting work to diverse treatments or graduated temperatures | 13 |
| 20090075225 | HEATING APPARATUS AND HEATING METHOD - A heating apparatus has first through fifth heating furnace arranged along the feeding direction in which glass substrates are fed by a feeding mechanism. The first heating furnace has a first heater for heating a glass substrate to at least a target temperature required for processing the workpiece. The second heating furnace has a heater for heating a glass substrate to a temperature equal to or below the target temperature. The second heating furnace generates an amount of heat smaller than that of the first heating furnace. | 03-19-2009 |
| 20090191499 | METHODS AND APPARATUSES FOR HEATING SEMICONDUCTOR WAFERS - Methods and apparatuses for heat treatment of semiconductor wafers are disclosed herein. A method of heating a semiconductor wafer in accordance with one embodiment includes heating the wafer in a loading enclosure of a heat treatment system above an ambient temperature external to the loading enclosure. The method also includes moving the heated wafer from the loading enclosure into a processing enclosure of the heat treatment system. In particular embodiments, the method can further include heating a flow of purge gas above the ambient temperature and introducing the flow of heated purge gas into the loading enclosure while the wafer is in the loading enclosure. In still further embodiments, the method can include heating a flow of process gas to a processing temperature and introducing the heated flow of process gas into the processing enclosure while the wafer is in the processing enclosure. | 07-30-2009 |
| 20110008740 | RAPID CONDUCTIVE COOLING USING A SECONDARY PROCESS PLANE - A method and apparatus for thermally processing a substrate is provided. In one embodiment, a method for thermally treating a substrate is provided. The method includes transferring a substrate to a chamber at a first temperature, the chamber having a heating source and a cooling source disposed in opposing portions of the chamber, heating the substrate in the chamber during a first time period to a second temperature, heating the substrate in the chamber to a third temperature during a second time period, and cooling the substrate in the chamber to a fourth temperature that is substantially equal to the second temperature during the second time period, wherein the second time period is about 2 seconds or less. | 01-13-2011 |
| 20120214113 | HEAT REMOVAL AND RECOVERY IN BIOMASS PYROLYSIS - Pyrolysis methods and apparatuses that allow effective heat removal, for example when necessary to achieve a desired throughput or process a desired type of biomass, are disclosed. According to representative methods, the use of a quench medium (e.g., water), either as a primary or a secondary type of heat removal, allows greater control of process temperatures, particularly in the reheater where char, as a solid byproduct of pyrolysis, is combusted. Quench medium may be distributed to one or more locations within the reheater vessel, such as above and/or within a dense phase bed of fluidized particles of a solid heat carrier (e.g., sand) to better control heat removal. | 08-23-2012 |
| 20120264072 | METHOD AND APPARATUS FOR PERFORMING REACTIVE THERMAL TREATMENT OF THIN FILM PV MATERIAL - An apparatus for performing reactive thermal treatment of thin film photovoltaic devices includes a furnace having a tubular body surrounded by heaters and cooling devices. The apparatus includes cooled doors at ends of the furnace separated from a central portion of the furnace by baffles. The cooled doors facilitate increased convection within the furnace and improve temperature uniformity. | 10-18-2012 |
| 20130017503 | WAFER PROCESSING APPARATUS WITH HEATED, ROTATING SUBSTRATE SUPPORTAANM De Ridder; Chris G.M.AACI AlmereAACO NLAAGP De Ridder; Chris G.M. Almere NLAANM Boonstra; Klaas P.AACI AlmereAACO NLAAGP Boonstra; Klaas P. Almere NLAANM Oosterlaken; Theodorus G.M.AACI AlmereAACO NLAAGP Oosterlaken; Theodorus G.M. Almere NLAANM Ravenhorst; Barend J. T.AACI AlmereAACO NLAAGP Ravenhorst; Barend J. T. Almere NL - A semiconductor substrate processing apparatus ( | 01-17-2013 |
| 20130108974 | CARBON BAKING HEAT RECOVERY FIRING SYSTEM | 05-02-2013 |
| 20130309621 | METHOD AND APPARATUS FOR ADJUSTING WAFER WARPAGE - A method for adjusting the warpage of a wafer, includes providing a wafer having a center portion and edge portions and providing a holding table having a holding area thereon for holding the wafer. The wafer is placed onto the holding table with the center portion higher than the edge portions and thereafter pressed onto the holding area such that the wafer is attracted to and held onto the holding table by self-suction force. The wafer is heated at a predetermined temperature and for a predetermined time in accordance with an amount of warpage of the wafer in order to achieve a substantially flat wafer or a predetermined wafer level. | 11-21-2013 |
| 20140045130 | Method for heating a shaped component for a subsequent press hardening operation and continuous furnace for regionally heating a shaped component preheated to a predetermined temperature to a higher temperature - A method for heating a shaped component ( | 02-13-2014 |
| 20140065563 | MATERIAL HEATING METHOD - A material heating method includes: a step of charging a silicon-containing carbon steel material into a heating furnace; a step of preheating the material; a first heating step of raising the temperature of the material; a second heating step of lowering the temperature of the material so as to reduce a temperature difference between the surface and inside of the material; a third heating step of raising the temperature of the material; and a soaking step of reducing the temperature difference between the surface and inside of the material. The temperature of the material in the heating furnace is maintained at the melting point of fayalite or lower. | 03-06-2014 |
| 20160061524 | A METHOD AND PLANT FOR CARRYING OUT THERMAL TREATMENTS OF BRAKING ELEMENTS, IN PARTICULAR BRAKE PADS - A method and plant for thermally treating braking elements after a forming step, including a convective heating step at 150-300° C. and a infrared irradiation heating step, immediately in succession one relative to the other. A tunnel convection furnace is crossed by at least a first conveyor belt which translates along a first direction and on an upper face of which the braking elements are placed, is arranged laterally adjacent, with respect to the first direction, to an infrared heating tunnel furnace crossed by a second conveyor belt which translates along a second direction, parallel and opposite to the first one, and on an upper face of which the braking elements are placed. The first conveyor belt is larger than the second conveyor belt, and the braking elements appear in multiple side-by-side rows in a transverse and oblique direction with respect to the first and second directions. Robots placed at the opposite ends of the furnaces transfer the braking elements from the first conveyor belt to the second one or vice versa to a first end of the furnaces and place them on the first conveyor belt or second one to a second end of the furnaces being opposite to the first one, so as to change at will the sequence in which the infrared and convective heating steps are performed. | 03-03-2016 |
| 20160118066 | SENSOR STRUCTURE HAVING INCREASED THERMAL STABILITY - A reader sensor having a dusting layer having a thickness less than 5 Angstroms between and in contact with the AFM layer and with the pinned layer. The dusting layer comprises a non-magnetic, electrically conducting material, such as ruthenium or iridium. The reader sensor has a free layer composed of a material free of nickel (Ni). | 04-28-2016 |
| 20160167283 | OVEN FOR THE THERMAL CONDITIONING OF PREFORMS AND CONTROL METHOD OF AN AIR COOLING DEVICE FITTED TO SUCH AN OVEN | 06-16-2016 |
