Class / Patent application number | Description | Number of patent applications / Date published |
428620000 | Semiconductor component | 16 |
20080206588 | Layer Sequence and Method of Manufacturing a Layer Sequence - A layer sequence ( | 08-28-2008 |
20080220280 | DEFECT-FREE HYBRID ORIENTATION TECHNOLOGY FOR SEMICONDUCTOR DEVICES - A semiconductor device includes a semiconductor material having two crystal orientations. The semiconductor material forms an active area of the device. A device channel is formed on the two crystal orientations, which include a first region formed in a first crystal orientation surface of the semiconductor material, and a second region formed in a second crystal orientation surface of the semiconductor material wherein the first crystal orientation surface forms an angle with the second crystal orientation surface and the device channel covers at least an intersection of the angle. | 09-11-2008 |
20080241574 | SEMICONDUCTOR DEVICE HAVING STRUCTURE WITH SUB-LITHOGRAPHY DIMENSIONS - A method for forming a semiconductor device is provided including processing a wafer having a first layer and a second layer, the second layer is over the first layer, forming a vertical post from a sidewall spacer formed from the second layer, forming a filler over the first layer and surrounding the vertical post, and forming a device layer having a hole by removing the vertical post in the filler. | 10-02-2008 |
20080241575 | SELECTIVE ALUMINUM DOPING OF COPPER INTERCONNECTS AND STRUCTURES FORMED THEREBY - Methods and associated structures of forming a microelectronic device are described. Those methods may include heating a substrate comprising a patterned metallic region to about 145 C or below in a reaction space, introducing an aluminum co-reactant into the reaction space, wherein an aluminum material is formed on the patterned metallic region, but not on non-metallic regions. | 10-02-2008 |
20080248324 | PIEZOELECTRIC ELEMENT AND FILM FORMATION METHOD FOR CRYSTALLINE CERAMIC - In a piezoelectric element having a substrate, a lower electrode layered on the substrate, a piezoelectric body made of ceramic layered on top of the lower electrode and an upper electrode layered on the piezoelectric body, wherein a first metal layer is provided between the substrate and the lower electrode, a second metal layer is provided between the lower electrode and the piezoelectric body, and the first metal layer and the second metal layer are made of a metal selected from among metals of which the ionization tendency is not less than that of Cu, oxides of metals of which the ionization tendency is not less than that of Cu, and alloys of metals of which the ionization tendency is not less than that of Cu. | 10-09-2008 |
20080254313 | CIRCUIT MATERIALS, MULTILAYER CIRCUITS, AND METHODS OF MANUFACTURE THEREOF - A circuit assembly comprises two or more circuit laminates, each comprising a conductive metal layer disposed on a poly(arylene ether ketone) substrate layer, wherein at least one of the conductive metal layers has been patterned to form a circuit, and a bond ply layer comprising a thermoplastic or thermosetting material. The thermoplastic bond ply has a melting point between 250° C. and 370° C., a decomposition temperature greater than about 290° C. and a dissipation factor of less than 0.01 at 10 GHz. The thermoset bond ply has a dissipation factor less than 0.01 at 10 GHz and a decomposition temperature greater than about 290° C. after lamination. Methods of forming the above circuit assemblies are also disclosed. | 10-16-2008 |
20080299411 | Zinc oxide film and method for making - A method for depositing a solid film of ZnO onto a substrate from a reagent solution includes a reservoir of reagent solution maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solution. The reagent solution contains a source of Zn, a source of O, and multiple ligands to further control solution stability and shelf life. The chilled solution is dispensed through a showerhead onto a substrate. The substrate is positioned in a holder that has a raised structure peripheral to the substrate to retain or impound a controlled volume (or depth) of reagent solution over the exposed surface of the substrate. The reagent solution is periodically or continuously replenished from the showerhead so that only the part of the solution directly adjacent to the substrate is heated. A heater is disposed beneath the substrate and maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the reagent solution may be initiated. The showerhead may also dispense excess chilled reagent solution to cool various components within the apparatus and minimize nucleation of solids in areas other than on the substrate. The deposited film may be annealed after deposition and may be doped to enhance selected characteristics. The ZnO films made by the process have distinctive electrical and optical properties and are suitable for a variety of electronic and optical devices. | 12-04-2008 |
20090004504 | CIRCUIT SYSTEM WITH CIRCUIT ELEMENT AND REFERENCE PLANE - A circuit system comprising: forming a lower electrode over a substrate; forming a resistive film over the lower electrode; forming a multi-layered insulating stack over a portion of the resistive film; and forming an upper electrode over a portion of the multi-layered insulating stack. | 01-01-2009 |
20090110952 | Gradient Thin Film - Disclosed herein is a gradient thin film, formed on a substrate by simultaneously depositing different materials on the substrate using a plurality of thin film deposition apparatuses provided in a vacuum chamber, wherein the gradient thin film is formed such that the composition thereof is continuously changed depending on the thickness thereof by deposition control plates provided in the path through which the different materials move to the substrate. The gradient thin film is advantageous in that the thin film is formed by simultaneously depositing different materials using various deposition apparatuses, so that the composition thereof is continuously changed depending on the thickness thereof, with the result that the physical properties of a thin film are easily controlled and the number of deposition processes is decreased, and thus processing time and manufacturing costs are decreased, thereby improving economic efficiency. | 04-30-2009 |
20090169916 | FLEXIBLE FILM AND DISPLAY DEVICE COMPRISING THE SAME - Provided is a flexible film which includes a dielectric film, a metal layer formed on the dielectric film, circuit patterns formed on the metal layer, and a tin-based bonding layer formed on the circuit patterns. Thus, it is possible to improve the reliability, thermal resistance, and dimension stability of a flexible film and enhance the adhesion between circuit patterns and an integrated circuit (IC) of a flexible film and between circuit patterns and circuit electrodes of a display device. | 07-02-2009 |
20090176124 | Bonding pad structure and semiconductor device including the bonding pad structure - A bonding pad structure for a semiconductor device includes a first lower metal layer beneath a second upper metal layer in a bonding region of the device. The lower metal layer is formed such that the metal of the lower metal layer is absent from the bonding region. As a result, if damage occurs to the structure during procedures such as probing or bonding at the bonding region, the lower metal is not exposed to the environment. Oxidation of the lower metal layer by exposure to the environment is prevented, thus improving reliability of the device. | 07-09-2009 |
20100203350 | Methods and Apparatuses for Manufacturing Cast Silicon from Seed Crystals - Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With these methods, an ingot can be grown that is low in carbon and whose crystal growth is controlled to increase the cross-sectional area of seeded material during casting. | 08-12-2010 |
20120107639 | ELECTRICAL COMPONENT AND METHOD FOR MANUFACTURING ELECTRICAL COMPONENTS - An electrical component is provided by a method comprising forming a middle plated layer made of palladium or a palladium alloy on a substrate and forming a surface plated layer made of tin or a tin alloy containing a metal other than palladium on the middle plated layer. Thus, there can be provided an electrical component having a surface layer consisting primarily of tin in which whisker formation can be prevented for a long period under stress. | 05-03-2012 |
20140134454 | MULTI-LAYER COMPOSITE WITH METAL-ORGANIC LAYER - A multi-layer composite precursor is provided comprising a substrate, wherein the substrate comprises a light emitting organic compound, a first surface, and a second surface, wherein the second surface is superimposed by a transparent electrically conducting layer, a liquid phase superimposing at least a part of the first surface comprising a metal-organic compound, wherein the metal-organic compound comprises an organic moiety, wherein the organic moiety comprises a C═O group; and wherein the liquid phase further comprises a first silicon compound, wherein the first silicon compound comprises at least one carbon atom and at least one nitrogen atom. | 05-15-2014 |
20150294900 | ROOM-TEMPERATURE BONDED DEVICE, WAFER HAVING ROOM-TEMPERATURE BONDED DEVICE, AND ROOM-TEMPERATURE BONDING METHOD - A room-temperature bonded device has a first substrate having a first surface and a second substrate having a second surface to be bonded to the first surface. In the bonding of the first surface and the second surface, one of the first surface and the second surface contains an inorganic material such as silicon, SiO | 10-15-2015 |
20150364442 | METHOD FOR OBTAINING A BONDING SURFACE FOR DIRECT BONDING - A process for obtaining a bonding surface for direct bonding includes: a) providing a substrate based on a sintered metal having a base surface with an RMS roughness lower than 6 nanometres and a PV roughness lower than 100 nanometres; b) bombarding the base surface with ionic species; c) depositing a metal layer on the base surface; and d) carrying out a mechanical and/or chemical polish of an exposed surface of the metal layer. A structure including a substrate based on a sintered metal the base surface of which is at least partially formed from a metal including ionic species implanted by bombardment of the base surface, and a metal layer of identical chemical composition to that of the metal base substrate and including a bonding surface with an RMS roughness lower than 0.6 nanometres and a PV roughness lower than 10 nanometres is also provided. | 12-17-2015 |