| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 427255394 | Nitrogen containing coating (e.g., metal nitride, etc.) | 37 |
| 20080206464 | Method and Device for the Depositing of Gallium Nitrite Layers on a Sapphire Substrate and Associated Substrate Holder - The invention relates to a device for holding at least one substrate ( | 08-28-2008 |
| 20080226823 | Film-Forming Method - A TiN film is formed to have a predetermined thickness on a semiconductor wafer by heating the semiconductor wafer at a film formation temperature within a process container and performing a cycle including a first step and a second step at least once. The first step is arranged to supply a TiCl | 09-18-2008 |
| 20080233288 | METHOD OF FORMING CRYSTALLOGRAPHICALLY STABILIZED DOPED HAFNIUM ZIRCONIUM BASED FILMS - A method is provided for forming doped hafnium zirconium based films by atomic layer deposition (ALD) or plasma enhanced ALD (PEALD). The method includes disposing a substrate in a process chamber and exposing the substrate to a gas pulse containing a hafnium precursor, a gas pulse containing a zirconium precursor, and a gas pulse containing one or more dopant elements. The dopant elements may be selected from Group II, Group XIII, silicon, and rare earth elements of the Periodic Table. Sequentially after each precursor and dopant gas pulse, the substrate is exposed to a gas pulse containing an oxygen-containing gas, a nitrogen-containing gas, or an oxygen- and nitrogen-containing gas. In alternative embodiments, the hafnium and zirconium precursors may be pulsed together, and either or both may be pulsed with the dopant elements. The sequential exposing steps may be repeated to deposit a doped hafnium zirconium based film with a predetermined thickness. | 09-25-2008 |
| 20080241387 | ATOMIC LAYER DEPOSITION REACTOR - Various reactors for growing thin films on a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants are disclosed. The reactor according to the present invention includes a reaction chamber, a substrate holder, a showerhead plate, a first reactant source, a remote radical generator, a second reactant source, and an exhaust outlet. The showerhead plate is configured to define a reaction space between the showerhead plate and the substrate holder. The showerhead plate includes a plurality of passages leading into the reaction space. The substrate is disposed within the reaction space. A first non-radical reactant is supplied through the showerhead plate to the reaction space. The remote radical generator produces the radicals of a second reactant supplied from the second reactant source. The radicals are supplied directly to the reaction space without passing through the showerhead plate. | 10-02-2008 |
| 20080241388 | Strained metal silicon nitride films and method of forming - A method for forming a strained metal silicon nitride film and a semiconductor device containing the strained metal silicon nitride film. The method includes exposing a substrate to a gas containing a metal precursor, exposing a substrate to a gas containing a silicon precursor, exposing the substrate to a gas containing a first nitrogen precursor configured to react with the metal precursor or the silicon precursor with a first reactivity characteristic, and exposing the substrate to a gas pulse containing a second nitrogen precursor configured to react with the metal precursor or the silicon precursor with a second reactivity characteristic different than the first reactivity characteristic such that a property of the metal silicon nitride film formed on the substrate changes to provide a strained metal silicon nitride film. | 10-02-2008 |
| 20080260947 | METHOD OF MAKING A CVD COATING SCHEME INCLUDING ALUMINA AND/OR TITANIUM-CONTAINING MATERIALS - A method of making a coated body wherein the method includes the following steps: providing a substrate; applying by chemical vapor deposition a titanium carbonitride coating layer containing titanium carbonitride grains for a selected duration so as to terminate the growth of the titanium carbonitride grains at a pre-selected size and control the thickness of the titanium carbonitride coating layer so as to range between a lower limit equal to about 0.5 micrometers and an upper limit equal to about 25 micrometers; applying by chemical vapor deposition a first titanium/aluminum-containing coating layer containing first titanium/aluminum-containing grains for a selected duration so as to terminate the growth of the first titanium/aluminum-containing grains at a pre-selected size and control the thickness of the first titanium/aluminum-containing coating layer so as to range between a lower limit equal to greater than zero micrometers and an upper limit equal to about 5 micrometers, and wherein the first titanium/aluminum-containing coating layer is farther from the substrate than the titanium carbonitride coating layer; applying by chemical vapor deposition an alumina coating layer containing alumina grains for a selected duration so as to terminate the growth of the alumina grains at a pre-selected size and control the thickness of the alumina coating layer so as to range between a lower limit greater than zero micrometers and an upper limit equal to about 5 micrometers, and the alumina coating layer being farther away from the substrate than the first aluminum/titanium-containing coating layer, and wherein the first titanium-containing coating layer and the alumina coating layer comprising a coating sequence, and the method comprises applying a plurality of the coating sequences by CVD. | 10-23-2008 |
| 20080286464 | Group 2 Metal Precursors For Depositing Multi-Component Metal Oxide Films - Novel Sr and Ba complexes containing both beta-diketonates and N-methyl-pyrrolidone were synthesized and characterized. TGA experiments indicated these complexes are volatile, they can be employed as potential precursors for ALD strontium titanate (STO) or barium strontium titanate films (BST) films in semiconductor fabrication. | 11-20-2008 |
| 20080305260 | Organometallic compounds - Heteroleptic organometallic compounds containing at least one formamidinate ligand are provided. These heteroleptic organometallic compounds have improved properties over conventional vapor deposition precursors. Such compounds are suitable for use as vapor deposition precursors including direct liquid injection. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds or their solutions in organic solvents. | 12-11-2008 |
| 20090011129 | METHOD AND APPARATUS FOR PROVIDING PRECURSOR GAS TO A PROCESSING CHAMBER - Embodiments of the invention provide a method and an apparatus for generating a gaseous chemical precursor for a processing system. In one embodiment, an apparatus for generating the gaseous chemical precursor used in a vapor deposition processing system is provided and includes a canister having a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending from the inlet port into the canister, wherein the inlet tube contains an outlet positioned to direct a gas flow away from the outlet port and towards the sidewall of the canister. | 01-08-2009 |
| 20090061092 | FILM FORMING METHOD AND FILM FORMING APPARATUS - A film forming method is characterized in that the method is provided with a step of introducing a processing gas including inorganic silane gas into a processing chamber, in which a mounting table composed of ceramics including a metal oxide is arranged, and precoating an inner wall of the processing chamber including a surface of the mounting table with a silicon-containing nonmetal thin film; a step of mounting a substrate to be processed on the mounting table precoated with the nonmetal thin film; and a step of introducing a processing gas including organic silane gas into the processing chamber, and forming a silicon-containing nonmetal thin film on a surface of the substrate mounted on the mounting table. | 03-05-2009 |
| 20090074965 | PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS - Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp) | 03-19-2009 |
| 20090214787 | Erosion Resistant Coatings - The present disclosure relates to a method for producing a coating on a substrate. The method may include depositing metal atoms on one or more surfaces of a substrate, subjecting the metal atoms to a reactive gas, and producing a coating layer of a metal compound, wherein the metal compound may include nanocrystals of a transition metal compound in a ceramic matrix, wherein the transition metal compound may be selected from the group consisting of metal nitrides, metal carbides, metal silicides and combinations thereof. The reactive gas may be supplied from a precursor containing silicon, carbon and hydrogen, wherein the precursor may have a MW of greater than or equal to 100. | 08-27-2009 |
| 20100028535 | ORGANOMETALLIC COMPOUNDS AND PROCESSES FOR PREPARATION THEREOF - This invention relates to organometallic compounds represented by the formula LML′ wherein M is a metal or metalloid, L is a substituted or unsubstituted cyclopentadienyl group or cyclopentadienyl-like group, a substituted or unsubstituted pentadienyl group or pentadienyl-like group, or a substituted or unsubstituted pyrrolyl group or pyrrolyl-like group, and L′ is a substituted or unsubstituted pyrrolyl group or pyrrolyl-like group, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions. | 02-04-2010 |
| 20100028536 | METAL COMPOUND, MATERIAL FOR THIN FILM FORMATION, AND PROCESS OF FORMING THIN FILM - A metal compound represented by general formula (I): | 02-04-2010 |
| 20100055321 | PRECURSORS FOR ATOMIC LAYER DEPOSITION - Stable ALD precursors that have at least one metal-nitrogen bond and a mixed ligand are presented. These ALD precursors exhibit self-limiting growth, at reduced deposition temperature and produce less contamination all with enhanced stability. | 03-04-2010 |
| 20100104755 | DEPOSITION METHOD OF TERNARY FILMS - Method for producing a metal-containing film by introducing a metal source which does not contain metal-C or metal-N—C s-bonds (for example, TaCl5, SEt2), a silicon precursor (for example, SiH(NMe2)3 or (SiH3)3N), a nitrogen precursor such as ammonia, a carbon source such as monomethylamine or ethylene and a reducing agent (for example, H2) into a CVD chamber and reacting same at the surface of a substrate to produce metal containing films in a single step. | 04-29-2010 |
| 20100203246 | DEPOSITION METHOD AND DEPOSITION APPARATUS FOR NITRIDE FILM - A deposition method of depositing a nitride film, including steps of introducing one or more nitrogen supplying gas selected from hydrazine and nitrogen oxides into a catalyst reaction apparatus; enabling a reactive gas generated by contacting the nitrogen supplying gas with catalyst to be spouted out from the catalyst reaction apparatus; and reacting the reactive gas with a compound gas, thereby depositing a nitride film on a substrate is disclosed. | 08-12-2010 |
| 20100255199 | ALUMINA COATING, COATED PRODUCT AND METHOD OF MAKING THE SAME - A method of coating a substrate that includes the steps of: applying by chemical vapor deposition at a temperature ranging between about 750 degrees Centigrade and about 920 degrees Centigrade an alpha-alumina coating layer wherein the alpha-alumina coating layer exhibits a platelet grain morphology at the surface thereof. | 10-07-2010 |
| 20110135822 | COATED CUTTING TOOL AND METHOD FOR PRODUCING THE SAME - Provided are a coated cutting tool having excellent wear resistance and excellent resistance to chipping as well as excellent fracture resistance such that the coated cutting tool is unlikely to cause backward movement of the tool edge position due to wear or chipping, and a method for producing the same. | 06-09-2011 |
| 20110159188 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE STORAGE MEDIUM - A film deposition apparatus rotates a turntable and each gas nozzle relatively to each other at a rotational speed of 100 rpm or higher when depositing a titanium nitride film, to speed up a reaction gas supply cycle or a film deposition cycle of a reaction product. A next film of the reaction product is deposited before the grain size of the reaction product already generated on a substrate surface begins to grow due to crystallization of the already generated reaction product. | 06-30-2011 |
| 20110171384 | POLYMERIZED FILM FORMING METHOD AND POLYMERIZED FILM FORMING APPARATUS - A first substrate | 07-14-2011 |
| 20110229639 | NON-POLAR GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION - Non-polar (11 | 09-22-2011 |
| 20110262642 | Process for Producing Silicon and Oxide Films from Organoaminosilane Precursors - A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas: | 10-27-2011 |
| 20110268881 | Novel Germanium Complexes with Amidine Derivative Ligand and Process for Preparing the Same - Provided is a germanium complex represented by Chemical Formula 1 wherein Y1 and Y2 are independently selected from R3, NR4R5 or OR6, and R1 through R6 independently represent (Ci-C7) alkyl. The provided germanium complex with an amidine derivative ligand is thermally stable, is highly volatile, and does not include halogen components. Therefore, it may be usefully used as a precursor to produce high-quality germanium thin film or germanium-containing compound thin film by metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD). | 11-03-2011 |
| 20110318490 | METHOD FOR DEPOSITING A COATING - A coating apparatus and method for depositing a coating that contains at least one first element on a substrate by an activated vapor deposition, wherein the substrate is introduced into a gas atmosphere that contains at least the first element, and the gas atmosphere is activated by a heated activation element, wherein the first element is selected from among silicon, germanium, carbon, boron, or nitrogen, and the material of the activation element contains at least one metal and at least one second element, wherein the second element is selected from among silicon, boron, germanium, carbon, and/or nitrogen and is different from the first element. | 12-29-2011 |
| 20120201959 | In-Situ Hydroxylation System - Described are systems and methods for the hydroxylation of a substrate surface using ammonia and water vapor. | 08-09-2012 |
| 20120219714 | STABILIZATION OF BICYCLOHEPTADIENE - Disclosed are stabilized bicyclo[2.2.1]hepta-2,5-diene compositions and methods of making and using the same. | 08-30-2012 |
| 20120269970 | CLEANING METHOD AND FILM DEPOSITING METHOD - A cleaning method for a film deposition apparatus that deposits a polyimide film conveyed into a film deposition chamber by feeding a first source gas formed of dianhydride and a second source gas formed of diamine into the film deposition chamber, the method including the steps of: generating an oxygen atmosphere in the film deposition chamber, and removing polyimide remaining in the film deposition chamber by heating the film deposition chamber at a temperature of 360° C. to 540° C. in the oxygen atmosphere and oxidizing the polyimide. | 10-25-2012 |
| 20130243956 | Selective Atomic Layer Depositions - Provided are methods of selectively depositing an atomic layer deposition film on a substrate having two different surfaces. Also provided are methods of depositing TaN selectively onto a dielectric material versus a metal surface. | 09-19-2013 |
| 20130273250 | (AMIDE AMINO ALKANE) METAL COMPOUND, METHOD OF MANUFACTURING METAL-CONTAINING THIN FILM USING SAID METAL COMPOUND - The present invention relates to an (amide amino alkane) metal compound represented by the formula (1): | 10-17-2013 |
| 20140106071 | GROUP 5 CYCLOPENTADIENYL TRANSITION METAL-CONTAINING PRECURSORS FOR DEPOSITION OF GROUP 5 TRANSITION METAL-COINTAINING FILMS - Transition metal-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit transition metal-containing films on one or more substrates via a vapor deposition process. | 04-17-2014 |
| 20140363575 | Methods for the Deposition Of Manganese-Containing Films Using Diazabutadiene-Based Precursors - Methods and precursors are provided for deposition of films comprising manganese on surfaces using metal coordination complexes comprising a diazabutadiene-based ligand. Certain methods comprise exposing a substrate surface to a manganese precursor, and exposing the substrate surface to a tertiary amine. | 12-11-2014 |
| 20150315703 | SELECTIVE DEPOSITION OF NOBLE METAL THIN FILMS - Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode. | 11-05-2015 |
| 20160024647 | Low Temperature Molecular Layer Deposition Of SiCON - Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety. | 01-28-2016 |
| 20160076145 | MOCVD LAYER GROWTH METHOD WITH SUBSEQUENT MULTI-STAGE CLEANING STEP - The invention relates to a method for depositing layers, in particular of elements of the III and V, the II and VI or the IV main group on one or a plurality of substrates ( | 03-17-2016 |
| 20160194755 | MANGANESE-CONTAINING FILM FORMING COMPOSITIONS, THEIR SYNTHESIS, AND USE IN FILM DEPOSITION | 07-07-2016 |
| 20170233865 | PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS | 08-17-2017 |
