| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 427255390 | Halogen or halogen compound containing reactant | 27 |
| 20080226821 | Metal halide reactor for CVD and method - A reaction vessel (reactor) is shown that, filled with metal and placed either within a CVD type furnace or in a housing in fluid communication with the CVD type furnace can produce commercial quantities of a metal halide gas over extended time periods and multiple furnace runs. The control of temperature and the simplicity of this reaction vessel allows temperature differentials between the metal halide gas produced and the CVD type reactor target thus providing differing deposits. The reactor is noteworthy in that no valves, flow restrictors or other equipment which could create corrosion problems is used in the heated/reactive area of the vessel thus producing very high quality metal halide gas. | 09-18-2008 |
| 20080241385 | Method of Forming Thin Film, Thin Film Forming Apparatus, Program and Computer-Readable Information Recording Medium - A method of rapidly forming a thin film of high quality through film formation by alternate feeding of raw gases. In particular, a method of forming a TiN thin film, comprising repeating operations including causing TiCl | 10-02-2008 |
| 20090191339 | METAL CHLORIDE SEEDED GROWTH OF ELECTRONIC AND OPTICAL MATERIALS - A method of deposition by: depositing a metal halide on a substrate; providing a vapor that forms a material by way of chemical vapor deposition; heating the metal halide to a temperature at or above the melting point of the metal halide and at or below the melting point of the material; and contacting the metal halide with the vapor to cause growth on the substrate of a solid solution of the metal halide in the material. The metal is a rare earth metal or a transition metal. | 07-30-2009 |
| 20090191340 | Substrate processing method and system - A substrate processing method includes a first step of subjecting a target substrate to a gas process within an atmosphere containing a fluorine-containing process gas, thereby forming a fluorine-containing reaction product on a surface of the target substrate. The method further includes a second step of subjecting the target substrate treated by the gas process to a heating process and a gas process within an atmosphere containing a reactive gas that reacts with fluorine. | 07-30-2009 |
| 20100159136 | STATIC CHEMICAL VAPOR DEPOSITION OF y-Ni + y'-Ni3AI COATINGS - A static chemical vapor deposition (CVD) process may be used to deposit a coating including a γ-Ni+γ′-Ni | 06-24-2010 |
| 20100215854 | HVPE SHOWERHEAD DESIGN - A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages. | 08-26-2010 |
| 20100255198 | SOLID PRECURSOR-BASED DELIVERY OF FLUID UTILIZING CONTROLLED SOLIDS MORPHOLOGY - Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation. | 10-07-2010 |
| 20100304027 | SUBSTRATE PROCESSING SYSTEM AND METHODS THEREOF - Embodiments of the invention provide methods for processing substrates within a substrate processing system. In one embodiment, the method provides depositing a material on a substrate within a vapor deposition chamber coupled to a buffer chamber contained within a mainframe while maintaining a pressure of about 1×10 | 12-02-2010 |
| 20120164329 | Combination CVD/ALD method and source - The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor fed is split in to two paths from a precursor source. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes. | 06-28-2012 |
| 20130078376 | METAL NITRIDE CONTAINING FILM DEPOSITION USING COMBINATION OF AMINO-METAL AND HALOGENATED METAL PRECURSORS - Disclosed are methods of forming metal-nitride-containing films from the combination of amino-metal precursors and halogenated metal precursors, preferably forming SiN-containing films from the combination of aminosilane precursors and chlorosilane precursors. Varying the sequential reaction of the amino-metal precursors and halogenated metal precursors provide for the formation of metal-nitride-containing films having varying stoichiometry. In addition, the metal-nitride-containing film composition may be modified based upon the structure of aminometal precursor. The disclosed processes may be thermal processes or plasma processes at low temperatures. | 03-28-2013 |
| 20140087076 | ENHANCED DEPOSITION OF NOBLE METALS - The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber. | 03-27-2014 |
| 20140106070 | VAPOR DEPOSITION OF LiF THIN FILMS - A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film. | 04-17-2014 |
| 20150079284 | Methods for Coating Articles - Coated articles and methods and systems for coating the articles are described herein. The methods and systems described herein include, but are not limited to, steps for actively or passively controlling the temperature during the coating process, steps for providing intimate contact between the substrate and the support holding the substrate in order to maximize energy transfer, and/or steps for preparing gradient coatings. Methods for depositing high molecular weight polymeric coatings, end-capped polymer coatings, coatings covalently bonded to the substrate or one another, metallic coatings, and/or multilayer coatings are also disclosed. Deposition of coatings can be accelerated and/or improved by applying an electrical potential and/or through the use of inert gases. | 03-19-2015 |
| 427255391 | Titanium compound containing coating (e.g., titanium carbonitride, titanium nitride, etc.) | 8 |
| 20080226822 | Precoat film forming method, idling method of film forming device, loading table structure, film forming device and film forming method - The precoat film forming method has the deposition step of feeding processing gas into the film forming device having the loading table structure | 09-18-2008 |
| 20080241386 | Atomic Layer Deposition Methods - The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated. | 10-02-2008 |
| 20100003406 | APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION - Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel. | 01-07-2010 |
| 20100227062 | METHOD FOR FORMING Ti-BASED FILM AND STORAGE MEDIUM - A Ti film is formed on a surface of a wafer W placed inside a chamber | 09-09-2010 |
| 20110070371 | FLUORINE COMPOUNDS FOR DOPING CONDUCTIVE OXIDE THIN FILMS - Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate. | 03-24-2011 |
| 20150110959 | FILM FORMING METHOD AND FILM FORMING APPARATUS - A film forming method includes: forming a thin unit film on a target substrate by supplying processing gases sequentially and intermittently into a processing space, where the target substrate is placed, in a processing chamber of a film forming apparatus while purging the processing gases with a purge gas constantly supplied into the processing space; and repeating the forming of the thin unit film to form a film having a predetermined thickness on the target substrate. A flow rate of the purge gas supplied into the processing space is set such that the film is formed in a film forming mode in which the thin unit film is formed, irrespective of a pressure in the processing chamber. | 04-23-2015 |
| 20150345019 | METHOD AND APPARATUS FOR IMPROVING GAS FLOW IN A SUBSTRATE PROCESSING CHAMBER - Embodiments of methods and apparatus for improving gas flow in a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body and a chamber lid defining an interior volume; a substrate support disposed within the interior volume and having a support surface to support a substrate; a gas passageway disposed in the lid opposite the substrate support to supply a gas mixture to the interior volume, the gas passageway including a first portion and a second portion; a first gas inlet disposed in the first portion to supply a first gas to the first portion of the gas passageway; and a second gas inlet disposed in the second portion to supply a second gas to the second portion. | 12-03-2015 |
| 20160076144 | CHEMICAL VAPOR DEPOSITION PROCESS FOR DEPOSITING A TITANIUM OXIDE COATING - A chemical vapor deposition process for depositing a titanium oxide coating is provided. The chemical vapor deposition process for depositing the titanium oxide coating includes providing a glass substrate. A gaseous mixture is formed. The gaseous mixture includes a titanium-containing compound and a fluorine-containing compound. The titanium-containing compound is an oxygen-containing compound or the gaseous mixture includes a first oxygen-containing compound. The gaseous mixture is directed toward and along the glass substrate. The mixture reacts over the glass substrate to form the titanium oxide coating thereon. | 03-17-2016 |
| 427255392 | Tungsten compound containing coating (e.g., tungsten silicide, etc.) | 1 |
| 20090214786 | MULTI-STATION DEPOSITION APPARATUS AND METHOD - A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles. | 08-27-2009 |
| 427255393 | Silicon containing coating | 5 |
| 20080213479 | SiCN film formation method and apparatus - A method for forming an SiCN film on a target substrate in a process field is arranged to perform a plurality of cycles. Each cycle includes a first step of performing supply of a first process gas containing a silane family gas; a second step of performing supply of a second process gas containing a nitriding gas; a third step of performing supply of a third process gas containing a carbon hydride gas; and a fourth step of shutting off supply of the first process gas. Each cycle is arranged not to turn any one of the first, second, and third process gases into plasma outside the process field during supply thereof, but to heat the process field to a first temperature, at which the silane family gas, the nitriding gas, and the carbon hydride gas react with each other. | 09-04-2008 |
| 20100316800 | MULTI-STATION DEPOSITION APPARATUS AND METHOD - A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles. | 12-16-2010 |
| 20130344248 | METHOD FOR DEPOSITING DIELECTRIC FILMS - A method is provided for depositing a dielectric film on a substrate. According to one embodiment, the method includes providing the substrate in a process chamber, exposing the substrate to a gaseous precursor to form an adsorbed layer on the substrate, exposing the adsorbed layer to an oxygen-containing gas, a nitrogen-containing gas, or an oxygen- and nitrogen-containing gas, or a combination thereof, to form the dielectric film on the substrate, generating a hydrogen halide gas in the process chamber by a decomposition reaction of a hydrogen halide precursor gas, and exposing the dielectric film to the hydrogen halide gas to remove contaminants from the dielectric film. | 12-26-2013 |
| 20140302239 | PRODUCTION METHOD FOR POLYCRYSTALLINE SILICON, AND REACTOR FOR POLYCRYSTALLINE SILICON PRODUCTION - The present invention provides a method of producing polycrystalline silicon in which silicon is precipitated on a silicon core wire to obtain a polycrystalline silicon rod. In an initial stage (former step) of a precipitation reaction, a reaction rate is not increased by supplying a large amount of source gas to a reactor but the reaction rate is increased by increasing a concentration of the source gas to be supplied, and in a latter step after the former step, the probability of occurrence of popcorn is reduced using an effect of high-speed forced convection caused by blowing the source gas into the reactor at high speed. Thus, a high-purity polycrystalline silicon rod with little popcorn can be produced without reducing production efficiency even in a reaction system with high pressure, high load, and high speed. | 10-09-2014 |
| 20150140216 | CHEMICAL VAPOR DEPOSITION PROCESS FOR DEPOSITING A SILICA COATING ON A GLASS SUBSTRATE - A CVD process for depositing a silica coating is provided. The process includes providing a glass substrate. The process also includes forming a gaseous mixture including a silane compound, oxygen, a fluorine-containing compound, and a radical scavenger such as ethylene or propylene. The gaseous mixture is directed toward and along the glass substrate and is reacted over the glass substrate to form the silica coating thereon. | 05-21-2015 |
