| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 427255290 | Inorganic oxygen, sulfur, selenium, or tellurium (i.e., chalcogen) containing coating (e.g., phosphosilicate, silicon oxynitride, etc.) | 40 |
| 20080241384 | LATERAL FLOW DEPOSITION APPARATUS AND METHOD OF DEPOSITING FILM BY USING THE APPARATUS - A deposition apparatus and deposition method for forming a film on a substrate are disclosed. A film is deposited on a substrate by exposing the substrate to different flow directions of reactant gases. In one embodiment, the substrate is rotated in the reaction chamber after a film having an intermediate thickness is formed on the substrate. In other embodiments, the substrate is transferred from one reaction chamber to another after a film having an intermediate thickness is formed on the substrate. Accordingly, a film having a uniform thickness is deposited, averaging out depletion effect. | 10-02-2008 |
| 20080268153 | Thin-film forming apparatus and thin-film forming method - A thin-film forming method of this invention forms a thin film on a wafer. This method is capable of improving the quality yield of wafers. The thin-film forming method includes the step of suctioning a flow of a film-forming gas from both sides of a conveyance path while conveying a wafer along the conveyance path. The conveyance path extends in a direction of passing through the gas flow. | 10-30-2008 |
| 20090297711 | Process Stability of NBDE Using Substituted Phenol Stabilizers - A stabilized cyclic alkene composition comprising one or more cyclic alkenes, and at least one stabilizer compound having the Formula (I), | 12-03-2009 |
| 20100221428 | METHOD FOR DEPOSITING SILICON NITRIDE FILMS AND/OR SILICON OXYNITRIDE FILMS BY CHEMICAL VAPOR DEPOSITION - Pentakis(dimethylamino) disilane comprising compound is used along with a nitrogen containing gas and optionally an oxygen containing gas for SiN (and optionally SiON) film deposition by CVD. | 09-02-2010 |
| 20120213929 | METHOD OF OPERATING FILAMENT ASSISTED CHEMICAL VAPOR DEPOSITION SYSTEM - A method of performing a filament-assisted chemical vapor deposition process is described. The method includes providing a substrate holder in a process chamber of a chemical vapor deposition system, providing a non-ionizing heat source separate from the substrate holder in the process chamber, disposing a substrate on the substrate holder, introducing a film forming composition to the process chamber, thermally fragmenting the film forming composition using the non-ionizing heat source, and forming a thin film on the substrate in the process chamber. The non-ionizing heat source includes a gas heating device through and/or over which the film forming composition flows. The method further includes remotely producing a reactive composition, and introducing the reactive composition to the process chamber to interact with the substrate, wherein the reactive composition is introduced sequentially and/or simultaneously with the introducing the film forming composition. | 08-23-2012 |
| 20120276292 | METHOD OF FORMING SILICON OXIDE CONTAINING FILMS - A method of forming a silicon oxide film, comprising the steps of:
| 11-01-2012 |
| 20130323423 | METHOD FOR PRODUCING GAS BARRIER PLASTIC MOLDED BODY - Provided is a method for producing a gas barrier plastic molded body by forming a gas barrier thin film which is substantially colorless and has gas barrier properties, on the surface of a plastic molded body by a heating element CVD method using only raw material gases that are highly safe. The method for producing a gas barrier plastic molded body according to the present invention is a method for producing a gas barrier plastic molded body ( | 12-05-2013 |
| 20160108521 | METHOD FOR PREPARING A MOLYBDENUM DISULFIDE FILM USED IN A FIELD EMISSION DEVICE - The present disclosure relates to a method for preparing a molybdenum disulfide film used in a field emission device, including: providing a sulfur vapor; blowing the sulfur vapor into a reaction chamber having a substrate and MoO | 04-21-2016 |
| 427255310 | Metal and chalcogen containing coating (e.g., metal oxide, metal sulfide, metal telluride, etc.) | 28 |
| 20080299312 | Raw Material Solution for Metal Organic Chemical Vapor Deposition Method and Method for Manufacturing Composite Oxide Film Containing Hf-Si Using the Raw Material Solution - There is provided a raw material solution for MOCVD method having a high film forming rate, and a method for manufacturing composite oxide film containing Hf-Si using the raw material solution. There is also provided a method for manufacturing composite oxide film containing Hf-Si by using the raw material solution for MOCVD method providing an excellent adhesivity with a substrate. | 12-04-2008 |
| 20090246375 | METHOD FOR FORMING TANTALUM NITRIDE FILM - A tantalum nitride film-forming method comprises the steps of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms), and a halogen gas into a vacuum chamber; and reacting these components with one another on a substrate to thus form a surface adsorption film comprising a mono-atomic or multi (several)-atomic layer and composed of a compound represented by the following general formula: TaN | 10-01-2009 |
| 20100239758 | SURFACE PRE-TREATMENT FOR ENHANCEMENT OF NUCLEATION OF HIGH DIELECTRIC CONSTANT MATERIALS - Embodiments of the present invention relate to a surface preparation treatment for the formation of thin films of high k dielectric materials over substrates. One embodiment of a method of forming a high k dielectric layer over a substrate includes pre-cleaning a surface of a substrate to remove native oxides, pre-treating the surface of the substrate with a hydroxylating agent, and forming a high k dielectric layer over the surface of the substrate. One embodiment of a method of forming a hafnium containing layer over a substrate includes introducing an acid solution to a surface of a substrate, introducing a hydrogen containing gas and an oxygen containing gas to the surface of the substrate, and forming a hafnium containing layer over the substrate. | 09-23-2010 |
| 20110045183 | METHODS OF FORMING A LAYER, METHODS OF FORMING A GATE STRUCTURE AND METHODS OF FORMING A CAPACITOR - In a method of forming a layer, a precursor including a metal and a ligand chelating to the metal is stabilized by contacting the precursor with an electron donating compound to provide a stabilized precursor onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor. The precursor stabilized by the electron donating compound has an improved thermal stability and thus the precursor is not dissociated at a high temperature atmosphere, and the layer having a uniform thickness is formed on the substrate. | 02-24-2011 |
| 20120070582 | DEPOSITION OF TERNARY OXIDE FILMS CONTAINING RUTHENIUM AND ALKALI EARTH METALS - Methods and compositions for the deposition of ternary oxide films containing ruthenium and an alkali earth metal. | 03-22-2012 |
| 20140141165 | METHOD FOR MANUFACTURING MOLYBDENUM OXIDE-CONTAINING THIN FILM, STARTING MATERIAL FOR FORMING MOLYBDENUM OXIDE-CONTAINING THIN FILM, AND MOLYBDENUM AMIDE COMPOUND - Disclosed is a method for manufacturing a molybdenum oxide-containing thin film, involving vaporizing a starting material for forming a thin film containing a compound represented by the following general formula (I) to give vapor containing a molybdenum amide compound, introducing the obtained vapor onto a substrate, and further introducing an oxidizing gas to cause decomposition and/or a chemical reaction to form a thin film on the substrate. In the formula, R | 05-22-2014 |
| 427255320 | Plural metal containing coating (e.g., indium oxide/tin oxide, titanium oxide/aluminum oxide, etc.) | 4 |
| 20100015335 | METHOD FOR FORMING SRTIO3 FILM AND STORAGE MEDIUM - A substrate is arranged in a processing chamber, the substrate is heated, and an Sr material, a Ti material and an oxidizing agent are introduced into the processing chamber in the form of gas, the gases are reacted on the heated substrate, and an SrTiO | 01-21-2010 |
| 20100272895 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, STORAGE MEDIUM, AND GAS SUPPLY APPARATUS - A film deposition apparatus comprises: a process container | 10-28-2010 |
| 20110206846 | METHOD FOR DEPOSITING TRANSPARENT CONDUCTING OXIDES - A method of preparing light transmitting conducting metal oxide (TCO) films using atomic layer deposition (ALD) of a metal precursor multiple oxidizing reactants. The multiple metal oxidizing reactants may be selected to enhance growth of the TCO film. In a particular embodiment, an indium oxide TCO film is prepared using a cyclopentadienyl indium precursor and a combination of water and oxygen. | 08-25-2011 |
| 20120107505 | METHOD FOR FORMING Ge-Sb-Te FILM AND STORAGE MEDIUM - There is provided a method for forming a Ge—Sb—Te film having a composition of Ge | 05-03-2012 |
| 427255330 | Zinc (Zn), cadmium (Cd), or mercury (Hg), containing | 3 |
| 20080299313 | Film forming apparatus and film forming method - A film forming apparatus that forms a film on an inner wall of a tubular body by a chemical vapor deposition method is provided. The film forming apparatus includes: a source material storage section; a process gas generation section that forms process gas containing source material supplied from the source material storage section; a film forming section that forms a film on an inner wall of the tubular body; a process gas supply tube that connects to the tubular body and supplies the process gas from the process gas generation section to the tubular body; and a process gas discharge tube that connects to the tubular body and discharges the process gas that has passed through the tubular body, wherein the film forming section includes a retaining section that holds the tubular body. | 12-04-2008 |
| 20100166958 | FABRICATION METHOD AND FABRICATION APPARATUS FOR FABRICATING METAL OXIDE THIN FILM - Object To provide a technique for efficiently forming a metal oxide thin film made of zinc oxide or the like on a substrate at a low cost, without requiring a large amount of electrical energy. | 07-01-2010 |
| 20100203245 | FABRICATION METHOD OF A PHOTONIC CRYSTAL STRUCTURE - A method for fabricating a photonic crystal structure is disclosed herein for forming a cavity-type or a pillar type photonic crystal structure of a large area. By the property that a hetero-interface inhibits epitaxial growth, a patterned film layer is formed over the epitaxy substrate, so a photonic crystal structure is grown vertically by epitaxy in area outside of the patterned film layer on the epitaxy substrate. Furthermore, by designing the pattern of the patterned film, a defect mode photonic crystal structure such as an optical waveguide, an optical resonator and a beam splitter can be formed. | 08-12-2010 |
| 427255340 | Gallium (Ga), aluminum (Al), or indium (In) containing | 9 |
| 20080199614 | Method for improving atomic layer deposition performance and apparatus thereof - A method for improving atomic layer deposition (ALD) performance and an apparatus thereof are disclosed. The apparatus alternates the process temperature of the different ALD steps rapidly, and the process temperature of each step is determined in accordance with the specific precursor and the substrate surface used. In case a higher process temperature is needed, a plurality of heating units of the apparatus increases and keeps the temperature of the deposited substrate to complete surface reaction. When the lower process temperature is needful for the next ALD step, the heating units are turned off to reduce the temperature of the deposited substrate and a gas flow puffed to the heater and the deposited substrate to assist in temperature cooling. | 08-21-2008 |
| 20080268154 | METHODS FOR DEPOSITING A HIGH-K DIELECTRIC MATERIAL USING CHEMICAL VAPOR DEPOSITION PROCESS - Methods for forming a high-k dielectric layer that may be utilized to form a metal gate structure in TANOS charge trap flash memories. In one embodiment, the method may include providing a substrate into a chamber, supplying a gas mixture containing an oxygen containing gas and aluminum containing compound into the chamber, wherein the aluminum containing compound has a formula selected from a group consisting of R | 10-30-2008 |
| 20080299314 | ENHANCED ALUMINA LAYER WITH TEXTURE - A refined method to produce textured α-Al | 12-04-2008 |
| 20090061091 | Alumina layer with enhanced texture - A refined method to produce textured α-Al | 03-05-2009 |
| 20130260035 | METHOD OF MAKING A COATED CERAMIC CUTTING INSERT - A coated ceramic cutting insert for removing material from a workpiece, as well as a method for making the same, that includes a ceramic substrate with a rake surface and at least one flank surface wherein a cutting edge is at the juncture therebetween. A wear-resistant coating scheme that includes an alumina-containing base coating layer region, which has at least one exposed alumina coating layer, deposited by chemical vapor deposition on the substantially all of the surfaces of the ceramic substrate that experience wear during removal of material from the workpiece. The exposed alumina coating layer exhibits a blasted stress condition ranging between about 50 MPa (tensile stress) and about −2 GPa (compressive) as measured by XRD using the Psi tilt method and the (024) reflection of alumina. The exposed alumina coating layer is the result of wet blasting a titanium-containing outer coating layer region from the surface of the alumina-containing base coating layer region. | 10-03-2013 |
| 20130302521 | METHOD OF MAKING ALUMINUM OXYNITRIDE COATED ARTICLE - A coated article such as a coated cutting tool or coated wear part, which includes a substrate and a coating scheme on the substrate. The coating scheme has a titanium-containing coating layer, and an aluminum oxynitride coating layer on the titanium-containing coating layer. The aluminum oxynitride includes a mixture of phases having a hexagonal aluminum nitride type structure (space group: P63mc), a cubic aluminum nitride type structure (space group: Fm-3m), and optionally amorphous structure. The aluminum oxynitride coating layer has a composition of aluminum in an amount between about 20 atomic percent and about 50 atomic percent, nitrogen in an amount between about 40 atomic percent and about 70 atomic percent, and oxygen in an amount between about 1 atomic percent and about 20 atomic percent. The method of making the coated article includes a step of providing a substrate and depositing an aluminum oxynitride coating layer from a gaseous mixture that includes nitrogen, aluminum tri-chloride, ammonia, carbon dioxide, hydrogen chloride, optionally carbon monoxide, optionally argon, and hydrogen. | 11-14-2013 |
| 20140335272 | PROTECTIVE COATING OF SILVER - In the method, silver is protected against tarnishing using an Atomic Layer Deposition method. In the Atomic Layer Deposition method, a thin film coating is formed on the surface of silver by depositing successive molecule layers of the coating material. For example aluminium oxide (Al | 11-13-2014 |
| 20150140215 | DURABLE CONFORMAL WEAR-RESISTANT CARBON-DOPED METAL OXIDE-COMPRISING COATING - The present invention is related to carbon-doped metal oxide films. A method of depositing a low friction metal oxide film on a substrate is provided, including: using an atomic layer deposition technique, wherein said metal oxide film is deposited using at least an organo-metallic precursor, and wherein said substrate is at a temperature of 150° C. or lower during deposition of said metal oxide film, whereby a carbon-doped metal oxide film is obtained. The carbon-doped metal oxide films provide a low coefficient of friction, for example ranging from about 0.05 to about 0.4. In addition, the carbon-doped metal oxide films provide anti-stiction properties, where the measured work of adhesion is less than 10 μJ/m | 05-21-2015 |
| 20160194754 | COATED BODY WHEREIN THE COATING SCHEME INCLUDES A COATING LAYER OF TiAl2O3 AND METHOD OF MAKING THE SAME | 07-07-2016 |
| 427255350 | Germanium (Ge), tin (Sn), or lead (Pb) containing | 2 |
| 20120171378 | Binary and Ternary Metal Chalcogenide Materials and Method of Making and Using Same - This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. | 07-05-2012 |
| 20150104575 | MULTI-METAL FILMS, ALTERNATING FILM MULTILAYERS, FORMATION METHODS AND DEPOSITION SYSTEM - A deposition system can conduct ALD or CVD deposition and can switch between the deposition modes. The system is capable of depositing multi-metal films and multi-layer films of alternating ALD and CVD films. Reactant supplies can be bypassed with carrier gas flow to maintain pressure in a reactor and in reactor supply lines and purge reactants. | 04-16-2015 |
| 427255360 | Titanium (Ti) or zirconium (Zr) containing | 4 |
| 20080226820 | Formation of metal oxide film - A film formation method for forming a metal oxide film includes loading a target object into a process container configured to maintain a vacuum therein; supplying a film formation source material into the process container; supplying an oxidizing agent into the process container; and causing the film formation source material and the oxidizing agent to react with each other, thereby forming a metal oxide film on the target object. The film formation source material is an organic metal compound containing a metal of the metal oxide film and prepared by mixing a first organic metal compound that is solid at room temperature and has a higher vapor pressure with a second organic metal compound that is liquid at room temperature such that the organic metal compound is liquid at room temperature. | 09-18-2008 |
| 20100173075 | High Coordination Sphere Group 2 Metal B-Diketiminate Precursors - The present invention is directed to high coordination sphere Group 2 metal β-diketiminate compositions, such as bis(N-(2,2-methoxyethyl)-4-(2,2-methoxyethylimino)-2-penten-2-aminato) barium; and the deposition of the metals of such metal ligand compositions by chemical vapor deposition, pulsed chemical vapor deposition, molecular layer deposition or atomic layer deposition to produce Group 2 metal containing films, such as barium strontium titanate films or strontium titanate films or barium doped lanthanate as high k materials for electronic device manufacturing. | 07-08-2010 |
| 20110244130 | Method for Producing Photocatalytically Active Titanium Dioxide Layers - A method for manufacturing photocatalytically active titanium dioxide layers on substrate surfaces. The method reduces the effort for the manufacture of photocatalytically active titanium dioxide layers and increases the choice for the coating of suitable substrate materials. In the method, a titanium compound present in the gas phase and water vapor are directed to a preheated substrate by means of gas phase hydrolysis and a titanium dioxide layer is formed on the surface of the substrate by chemical reaction. In this respect, the titanium compound and water vapor are supplied separately from one another so that a flow speed of at least 0.5 m/s is achieved and the time between the first contact of the two gases up to the impact on the surface of the substrate is kept lower than 0.05 s, and in this process the photocatalytically active titanium dioxide layer is formed on the substrate surface. | 10-06-2011 |
| 20150118395 | Vapor Deposition of Metal Oxides, Silicates and Phosphates, and Silicon Dioxide - Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage. | 04-30-2015 |
| 427255370 | Silicon dioxide coating | 4 |
| 20080280039 | SEQUENTIAL CHEMICAL VAPOR DEPOSITION - The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the second reactant passes through a radical generator which partially decomposes or activates the second reactant into a gaseous radical before it impinges on the monolayer. This second reactant does not necessarily form a monolayer but is available to react with the monolayer. A pump removes the excess second reactant and reaction products completing the process cycle. The process cycle can be repeated to grow the desired thickness of film. | 11-13-2008 |
| 20100021632 | METHOD AND DEVICES FOR THE APPLICATION OF TRANSPARENT SILICON DIOXIDE LAYERS FROM THE GAS PHASE - Method and device for the application of transparent silicon dioxide layers from the gas phase, in which precursors are introduced into an oven by means of a carrier gas, characterized in that a liquid-phase process takes place upstream of the gas-phase process, the liquid-phase process used being a process which would take place as a quasi-sol-gel process from silicon-containing starting chemicals up to the formation of a silicon dioxide gel, but the liquid-phase process is stopped in the batch of the sol state by vaporizing the reaction mixture with the precursors present, mixing it with the carrier gas and transporting it to the oven. | 01-28-2010 |
| 20100227061 | LOW TEMPERATURE ALD Si02 - The present invention generally comprises a silicon dioxide atomic layer deposition method. By providing pyridine as a catalyst, water may be utilized as the oxidization source while depositing at a low temperature. Prior to exposing the substrate to the water, the substrate may be exposed to a pyridine soak process. Additionally, the water may be co-flowed to the chamber with the pyridine through separate conduits to reduce interaction prior to entering the chamber. Alternatively, the pyridine may be co-flowed with a silicon precursor that does not react with pyridine. | 09-09-2010 |
| 20130017328 | FILM FORMING METHOD AND FILM FORMING APPARATUS - A film forming method includes a step of arranging a wafer, on which an insulating film is formed, in a processing chamber of a film forming apparatus and a surface modification step of supplying a compound gas containing silicon atoms and an OH group-donating gas into the processing chamber so that Si—OH groups are formed on the surface of the insulating film. The film forming method further includes a film forming step of supplying a film forming gas containing a manganese-containing material into the processing chamber so that a manganese-containing film is formed on the surface of the insulating film on which the Si—OH groups have been formed through a CVD method. | 01-17-2013 |
